五、發明說明（1) 【發明所屬之技術領域】 本發明係關於一種生醫檢體離子感應場效電晶體之技 術’特別是關於一種生醫檢體離子感應場效電晶體之封裝 與製程整合技術，其運用一般半導體製程技術完成的金氧 半場效電ί體加上對離子具有鍵結反應的感測薄膜，再使 用感光性％氧樹脂作為封裝材料，對感測區域外的元件與 金屬連線部分進行與溶液的隔離，如此即可完成一離子感 應場效電晶體。 【先前技術 查由於 器、檢測儀 傳統的大型 器勢必會被 醫療系統所 以開心 樣品的收集 化驗結果， 就地監護的 就地監 握式或診斷 不需額外的 驗結果給醫 題0 可攜帶、 取代，其 手術為例 ，經樣品 往往需要 意義。 護的醫學 螢幕旁易 抽取患者 護人員， 醫療技術之長足 器應運而生。為 、單一功能與專 多功能 中生物 ，血液 冷卻、 二十分 治療在 於拆裝 血液進 以杜絕 進步，使得各類型的醫療儀 了要達到就地監照護之目的， 業人員才可使用的醫療檢測儀 、使用簡單且快速量測的整合 感測器即為研究發展的核心。 的化驗與檢測首先需藉由血液 標示、送件至實驗室經化驗器 鐘以上的等待，這失去醫療上 於檢測儀器能達到可攜式、手 的模組化產品’這些功能達到 行化驗，而得到提供正確的檢 樣品可能遭污染或時效性等問 1243899 五、發明說明（2) ^ 整合半導體製程於生物感測器的製作是近年來國、内 外研究機構的熱門題材，利用半導體製造中的薄膜製程可 為生醫感測元件上的感測電極提供微小化，提高感測度的 優點，並易於整合I C於感測元件旁對感測訊號提供即時 (real-time)訊號處理的機制。 在先前專利技術中，有許多利用半導體製造技術中的 薄膜製程來製作生醫感測元件之技術，例如在美國發明專 利第554 3024號專利案中，其在一半導體基材上形成了源 極、汲極與離子感應膜而形成一葡萄糖感測功能之場效電 晶體結構。又例如在同一申請人所提出之美國發明專利申 請號第1 0/279796號中，其提供一可用來感測血液離子成 份之場效電晶體結構。 【發明内容】 本發明所欲解決之技術問題 了草ίΠ!應場效電晶體之封裝技術方面，目前仍存在 術問題。在習知之離子感應場效電晶體 區域與元件保護之封裝技術及其缺失方面主要 (一）電晶體完成後，利用人力進行環氧樹 ^的塗佈，疋義出閘極上的感測區域，因為人工塗 ϊ確3=環氧樹脂在固化前流動，故無法 二二感測”打開，保護住元件的其他部分。 圖斤不、、係顯示習知離子感應場效電晶體人V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a technology of an ion-sensing field-effect transistor for biomedical specimens, and in particular to the packaging and manufacturing process of an ion-sensing field-effect transistor for biomedical specimens. Integrated technology, which uses a metal-oxygen half-field-effect body completed by general semiconductor process technology, plus a sensing film that has a bond reaction to ions, and then uses a photosensitive% oxygen resin as a packaging material for components outside the sensing area and The metal connection part is isolated from the solution, so that an ion-induced field effect transistor can be completed. [Previous technology check Because the traditional large-scale device of detector and tester is bound to be used by the medical system, collect the test results of the happy sample. The on-site monitoring of the on-site monitoring or diagnosis does not require additional test results. Instead, its surgery as an example, the meridian often needs meaning. It is easy to draw patients and nurses by the screen, and medical technology has emerged. For the purpose of single function and specialized multi-functional organisms, blood cooling and twenty-point treatment are to disassemble blood to prevent progress, so that all types of medical instruments can achieve the purpose of on-site monitoring and care, which can only be used by professionals. Detectors, integrated sensors with simple and fast measurement are the core of research and development. The testing and detection of the first need to wait for more than the clock of the tester by blood labeling and delivery to the laboratory. This loses the medical ability of the testing equipment to reach portable and hand-held modular products. The question of getting the correct test sample may be contaminated or time-sensitive, etc. 1243899 V. Description of the invention (2) ^ Integrating semiconductor manufacturing into the production of biosensors has been a hot topic in research institutes at home and abroad in recent years. The thin film process can provide the advantages of miniaturization of the sensing electrodes on the biomedical sensing element, improve the sensitivity, and easily integrate the IC to provide real-time signal processing mechanism for the sensing signal next to the sensing element. Among the previous patented technologies, there are many technologies for making biomedical sensing elements by using the thin film process in semiconductor manufacturing technology. For example, in the US Patent No. 554 3024, a source is formed on a semiconductor substrate. , The drain electrode and the ion sensing film to form a field effect transistor structure with a glucose sensing function. For another example, in US Patent Application No. 10/279796 filed by the same applicant, it provides a field effect transistor structure that can be used to sense blood ion components. [Summary of the Invention] The technical problem to be solved by the present invention is technical aspects of packaging technology for field-effect transistors. In the conventional packaging technology of ion-sensing field-effect transistor area and component protection and its missing aspects, (1) after the transistor is completed, the epoxy tree is coated by human force, and the sensing area on the gate is defined. Because the artificial coating does 3 = the epoxy resin flows before curing, so it cannot be opened to protect the other parts of the component. The figure shows the conventional ion-sensing field effect transistor.
$ 7頁 1243899 五、發明說明（3) 201 /一 °二之。不思圖’其主要包括有-源極區域 出區域2G2、—閉極區域M3，在其間定義 f T子感剩區域204。在此一結構配置中，若：： 裸露於待測溶液中(如虛線所標示），會造成電 失效，此；法f ί 或氧化而開路，造成元件 (二)使用半導以耗時且準確性與良率均很低； 定義感固元件表面後，再以黃光微影 區域ίτ開'^此古ί乾式或者濕式蝕刻技術，將感測 法滿足兀件可靠性與耐久度的要求。 …、 (二)：殊結構之離子感應場效電晶 製程中的非等向性濕式钱刻，將元二；=電 屬連線分別製作於晶片正面與背面，如η， 之感測薄膜即可不需要額外的封裝保護金面 此特殊結構需要較複雜的製程手不在2旦 率，相對成本增加。 S不易控制良 本發明提出一新式封裝方法與對應之减洌薄膜制 以往上述習用封裝技術的各項r 裝與製程整合方法，以提高離子 電晶體 離子感應場效電晶二運：感光性環氧樹脂於 為且古β Γ 體的封裝上，所採用的感光性環《谢H匕 /、s先父連（Phot。-㈣sslink)作用，可以特殊波長日 五、發明說明（4) 光$透過光罩與對準機台，在離子感應場效電晶體上準確 ，疋義感測區域，經過顯影、定影與硬烤之步驟後，可固 定於離子感應场效電晶體上，此時之感光性環氧樹脂 完全固化，具備極佳的抗化性與附著力，足以長時間使用 於離子感應場效電晶體的量測環境。 測面ί ί ί、明：之另一運用為使用感光性環氧樹脂定義感 、積對感測溥膜的沉積方式可以有兩種選擇：一為習知 ^感測薄膜於封裝前完成，此類型薄膜必須源 ^極退火與其金屬薄膜沉積時較大的熱預算（Therma/ ” =get )，對於某些較不能耐高溫的感測薄膜會破壞感測 目前標準化半導體製程並不包含離子感應場 二丨曰日體所而要的感測薄膜，故無法整合CMOS電路於同一 Ϊ ^，為離子感應場效電晶體未來發展的—大限制。 ；Μ•粗二ί用感光性環氧樹脂作為封裝材料的一大優點，此 技二士回度抗化性可以承受乾濕式蝕刻，故可以在CM0S電 場^^ ί，作為硬式光罩（Hard MaSk)以移除離子感應 氣1爲曰日體上的保護層，裸露出離子感應場效電晶體閘極 + i二二並可以承受蒸鍍與濺鍍的電漿或高溫，得以讓所 =的，應薄膜沉積閑極氧化層上，完成離子感應場效電 ΐi方法的優點為可快速且簡便的進行後段製程，即 應場效電晶體，與目前的超大型積體電路 不/ 1程整合性高，利於大量生產，降低成本。 本餐明解決問題之技術手段 五、發明說明（5) 本發明為解決習知技 離子感應場效電晶體之基 別以熱氧化方式成長絕緣 離子佈值完成源極與汲極 金屬連接之訊號線。此方 有半導體與金屬連線的部 化性極高之感光性環氧樹 面，使用半導體製程中的 感光性環氧樹脂可作為阻 或濺鍍系統將感測薄膜材 任何可進行蒸鍍或濺鍍且 如··氮化矽（Si3N4)、氧化 组（Ta2〇5)、氧化铪（Hf〇2) 感應場效電晶體。可實現 易的製程技術。 術之問題所採用之技術手段係在 本結構中之半導體基板本體，分 層與閘極氧化層後，以擴散或者 區域’沉積金屬層如鋁、銅作為 法中’除了閘極感測區域外，所 份均需要與溶液隔絕，以具備抗 ，塗佈於離子感應場效電晶體表 黃光微影技術定義出感測區域， 絕溶液封裝，最後使用真空蒸鍍 料沉積於感測區域，此材料包含 具有離子感應特性之材料，例 錫（Sn〇2)、氧化鋁（Al2〇3)、氧化 、氮化鈕（TaN)等材料，完成離子 低熱預异與南整合性、步驟簡 本發明對照先前技術之功效 1ί t月所提供之離子感應場效電晶體，可針對就地龄 = =、、先日日片。本發明著重於對離子感應 技術與感測薄膜沉積進行-具有整 得盆ί:由本發明運用感光性環氧樹脂作為封裝材料，使 中，可利用黃光微影製程明確定義出除了感測區 1243899 五、發明說明（6) 良率與耗 適用於各 發明之另 系統之電 氧樹脂定 脂之抗化 所以可以 空蒸鍍、 上，完成 ，並與目 時費 類酸驗 一運用 路，如 義待挖 性極 簡易的 濺鑛與 離子感 前之 域外的封裝，免除習知的以人力塗 工，且感光性環氧樹脂抗化性極佳，可1 溶液而不會被破壞，達成封裝之‘果]= 乾圍為在已經完成量測電路或者並他敕人 無線訊號收發電路等晶片上使用感光ς二 開之離子感應區域後，因為感光性環氧= 高，可以抵抗大部分的乾濕式钱刻條件: 開出感測區域，裸露出閘極氧化層，以直 化學氣相沉機離子感應薄膜於閘^氧化声、 應場效電晶體，可以節省封裝與製程步ς VLSI電路製程具有高度的整合性。 【實施方式】 首先參閱第二圖所示，1 咸雍P Φ曰Μ 7 Λ Λ ，、係頜不本發明生醫檢體離子 琢應％效電晶體1 〇 0之較佳眚始也 一 Ρ 丨矽日m 1 A ^ ^例結構圖，其結構包括有 、二厂二 其預定位置形成有1極區域22、- 古1::及極區域17。該離子感應場效電晶體1〇〇 ^ .連線3 3，形成在該離子感應場效電晶體所 的金屬連線區❺’並分別連接該源極區域16與汲極區 一感光性環氧樹脂層20塗佈於矽晶片上，並定義與外 部連接之金屬接合鍵18b與離子感測區域21。在該離子感 測區域21中具有一離子感測薄膜2 2。 該感光性環氧樹脂層20之厚度約為2〜1〇ym。其使用 第11頁 1243899 五、發明說明（7) 之材料係可選自於氮化矽（Si3N4)、氧化錫（Sn02)、氧化鋁 (Al2〇3)、氧化钽（Ta2〇5)、氧化铪（Hf〇2)、氮化鈕（TaN)等 可進行蒸鍍或濺鍍且具有離子感應特性之材料。 在該離子感應場效電晶體1 0 〇之p型石夕晶片11之背面包 括有一金屬接合層1 9 (例如鋁金屬層），並可以銀膠對準結 合於一印刷電路板3丨上。該印刷電路板3丨上之預設金屬連 線32與離子感應場效電晶體1 〇〇之金屬接合鍵18b可經由金 屬線3 3予以連接導通。 本發明之離子感應場效電晶體1 〇 〇之結構中 此外 該印刷電路板3 1上除了離子感應場效電晶體丨〇 〇的離子感 測區域2 1 (即離子感測薄膜22之設置區域）以外的部分更以 非感光性環氧樹脂4予以完全封裝。 以下兹同時配合第二圖及第三4〜三；圖對本發明之 細之說明。如第以圖所示，其係首先在-p型梦 =ί m = e Si-Wafer)上濕氧化成長出一厚度約6000A 塗ί :匕 後使用黃光微影製程在該氧化矽層U上 層適當厚度之光阻層P1、並定義出製作本發明離 感應場效電晶體的主動區域1 3。 上之Li =顯示Λ用：式亀液⑽E)钮刻主動區13 軋化矽層1 2，直至露出p型矽晶片J i。 -^ 4,;^Λ20"500Α ° ^ …。然後再於該間極氧化層“上之預定間極 1243899$ 7 pages 1243899 V. Description of the invention (3) 201 / one ° two of them. The imaginary map 'mainly includes-a source region, an out region 2G2, and a-closed region M3, in which the f T subsense region 204 is defined. In this structural configuration, if: Exposure to the test solution (as indicated by the dashed line), it will cause electrical failure. This method f ί or oxidation will open the circuit, causing the component (2) to use a semiconductor to consume time and The accuracy and yield are very low; after the surface of the solid-state component is defined, the yellow light lithography area is used to open the old dry or wet etching technology, and the sensing method can meet the requirements of reliability and durability of the component. …, (Two): Anisotropic wet-type money engraving in the process of ion-structured field-effect transistor with special structure, the element two is made; = the electrical connection is made on the front and back of the chip, such as η, for sensing The thin film does not require additional packaging to protect the gold surface. This special structure requires a more complex process, and the relative cost is increased. S is not easy to control. The present invention proposes a new type of packaging method and corresponding reduced packaging film manufacturing methods of the conventional packaging technologies of the above-mentioned conventional packaging technology, in order to improve the ion-transistor field-effect transistor. Oxygen resin is used for the packaging of the ancient β Γ body, and the photosensitive ring "Xie H d /, s sslink" function can be used for special wavelengths. Fifth, invention description (4) Light $ Through the photomask and the alignment machine, the ion-sensing field-effect transistor is accurate, and the sensing area can be fixed on the ion-sensing field-effect transistor after the steps of development, fixing and hard baking. The photosensitive epoxy resin is completely cured and has excellent chemical resistance and adhesion, which is enough for long-term use in the measurement environment of ion-sensing field effect transistors. Measuring surface ί ί, Ming: Another application is to use photosensitive epoxy resin to define the sensing and product pairing of the sensing film. There are two choices for the deposition method: one is known ^ The sensing film is completed before packaging, This type of film must have a large thermal budget during source annealing and metal film deposition (Therma / ”= get). For some less sensitive high temperature sensing films, the sensing will be damaged. At present, the standard semiconductor process does not include ion sensing. Field II 丨 is the sensing film required by the solar body, so it is not possible to integrate CMOS circuits on the same screen, which is a major limitation for the future development of ion-sensing field-effect transistors. M • Rough II uses photosensitive epoxy resin As a major advantage of the packaging material, the resistance of this technician can withstand wet and dry etching, so it can be used in the CM0S electric field ^^, as a hard mask (Hard MaSk) to remove the ion induction gas 1 The protective layer on the solar body exposes the ion-induced field-effect transistor gate + i22 and can withstand the plasma or sputtering plasma or high temperature, so that the thin film should be deposited on the oxide layer of the electrode, Complete ion induction field effect The advantage is that the back-end process can be performed quickly and easily, that is, field-effect transistor, which does not have high integration with the current ultra-large integrated circuit, which is conducive to mass production and reduces costs. V. Description of the invention (5) The present invention is to solve the problem of the conventional ion-sensing field effect transistor based on the thermal oxidation method to grow the value of the insulation ion to complete the signal line between the source and the drain metal. This side includes semiconductors and metals The photosensitive epoxy resin surface with very high partiality of the connection. The photosensitive epoxy resin in the semiconductor process can be used as a resist or sputtering system. Any sensing film can be evaporated or sputtered, such as ... Silicon nitride (Si3N4), oxide group (Ta205), hafnium oxide (Hf〇2) induction field-effect transistor. Easy process technology can be realized. The technical means used for the technical problems are semiconductors in this structure. After the substrate body is layered and gate oxide layer, a metal layer such as aluminum or copper is deposited by diffusion or area. In addition to the gate sensing area, all parts need to be isolated from the solution to provide resistance and coating. Ion-sensing field-effect transistor surface yellow light lithography technology defines the sensing area, which is encapsulated in a solution, and is finally deposited on the sensing area using a vacuum evaporation material. This material includes materials with ion-sensing properties, such as tin (Sn〇2), Alumina (Al203), oxidation, nitride button (TaN) and other materials, complete ionic low-heat pre-differentiation and integration of South, simple steps. The present invention is compared with the efficacy of the prior art. , Can be targeted for local age = = ,, the day before the film. The present invention focuses on the ion sensing technology and sensing film deposition-with a well-rounded pot: the present invention uses a photosensitive epoxy resin as a packaging material, so that, The yellow light lithography process can be used to clearly define in addition to the sensing area 1243899 V. Description of the invention (6) Yield and consumption The resistance of the oxy-resin fixing system applicable to other systems of the invention can be vapor-deposited, completed, and completed. And it can be used with the time-consuming acid test, such as extremely easy to mine and the encapsulation outside the field before the ionization, eliminating the need for manual labor and photosensitive epoxy. Resin has excellent chemical resistance, it can be used in 1 solution without being damaged, and the effect of encapsulation can be achieved. = Dry-enclosed is the use of light-sensitive sensors on chips that have completed measurement circuits or other wireless signal transceiver circuits. After the ion sensing area, because the photosensitive epoxy = high, it can resist most of the dry and wet money engraving conditions: open the sensing area, expose the gate oxide layer, and use a direct chemical vapor deposition ion sensing film on the gate ^ Oxide and field effect transistors can save packaging and process steps. VLSI circuit process is highly integrated. [Embodiment] Referring first to the second figure, 1 Xianyong P Φ is M 7 Λ Λ, and the jaw is not the best choice for the biomedical sample ion response% effect transistor 100 of the present invention. Ρ 丨 Si m 1 A ^ ^ Example structure diagram, the structure includes, the second plant and its second pole formed a predetermined region 22,-ancient 1 :: and pole region 17. The ion-sensing field-effect transistor 100 ×. Connection 33 is formed in a metal connection region ′ ′ of the ion-sensing field-effect transistor and connects the source region 16 and the photosensitive region with a photosensitive ring, respectively. The oxyresin layer 20 is coated on a silicon wafer, and defines a metal bonding key 18 b and an ion sensing region 21 connected to the outside. An ion-sensing film 22 is provided in the ion-sensing region 21. The thickness of the photosensitive epoxy resin layer 20 is about 2 to 10 μm. Its use on page 11 1243899 V. The material of the invention description (7) may be selected from silicon nitride (Si3N4), tin oxide (Sn02), aluminum oxide (Al203), tantalum oxide (Ta205), oxidation Ion (Hf〇2), nitride button (TaN) and other materials that can be evaporated or sputtered and have ion sensing properties. A metal bonding layer 19 (such as an aluminum metal layer) is included on the back surface of the p-type Shixi wafer 11 of the ion-sensing field effect transistor 100, and can be aligned and bonded to a printed circuit board 3 with silver glue. The predetermined metal connection 32 on the printed circuit board 3 and the metal bonding key 18b of the ion-sensitive field effect transistor 1000 can be connected and conducted through the metal line 33. In the structure of the ion-sensing field-effect transistor 100 of the present invention, in addition to the ion-sensing region 2 1 of the printed circuit board 31 except the ion-sensing field-effect transistor 丨 00 (that is, the setting area of the ion-sensing film 22 Parts other than) are completely encapsulated with non-photosensitive epoxy resin 4. In the following, the second drawing and the third 4 to 3 are used together; the drawings explain the details of the present invention. As shown in the figure, it is first wet-oxidized on -p-type dream = ί m = e Si-Wafer) to grow to a thickness of about 6000A. Coating: After using a yellow light lithography process on the silicon oxide layer U, an appropriate layer is formed. The thickness of the photoresist layer P1 and the active region 1 3 of the field-effect transistor of the present invention are defined. The upper Li = display Λ is used: the formula 亀 solution 亀 E) button engraved the active area 13 rolled silicon layer 12 until the p-type silicon wafer J i is exposed. -^ 4,; ^ Λ20 " 500Α ° ^ ... Then on the interlayer oxide layer "predetermined interlayer 1243899
五、發明說明（8) 成一光阻層P 2。 、，第一 D圖係顯示以黃光微影製程在該閘極氧 義出離子感應場效電晶體的閘極區域丨5後，進行疋 極與汲極的離子佈植，以在該p型矽晶片丨丨中 的j原 區域16與汲極區域17。 成一源極V. Description of the invention (8) A photoresist layer P 2 is formed. The first D picture shows a yellow light lithography process in the gate region of the gate oxygen-sense ion-sensing field-effect transistor, and then implanting the ions of the sacrificial and drain electrodes in the p-type silicon. The original region 16 and the drain region 17 in the wafer 丨. A source
第三E圖係顯示去除光阻層？2後，對該形成之 ，16與汲極區域17進行高溫的退火與驅入（drive-in')。°在 完成第二E圖之高溫退火與驅入步驟後，隨即在第三F圖 中，使用蒸鍍、濺鍍或者化學氣相沉積方式，在該閘極區 域15、源極區域16與汲極區域17上沉積一金屬層“（例如 可採用鋁或銅）後，再使用黃光微影製程以光阻層p3定義 出離子感應場效電晶體的金屬連線區域。 第三G圖顯示以乾式或濕式蝕刻後完成金屬連線18&The third E diagram shows the removal of the photoresist layer? After 2, the formed 16 and the drain region 17 are subjected to high-temperature annealing and drive-in '. ° After completing the high-temperature annealing and drive-in steps of the second E diagram, then in the third F diagram, using evaporation, sputtering or chemical vapor deposition, the gate region 15, the source region 16 and the drain region After depositing a metal layer on the electrode region 17 (for example, aluminum or copper can be used), a yellow photolithography process is used to define the metal connection region of the ion-sensing field-effect transistor with the photoresist layer p3. The third G figure shows the dry type Or wet etching to complete the metal wiring 18 &
後，去除P型矽晶片11背面的氧化層丨4a，再於該p型矽晶 片11背面沉積一金屬接合層19，加以爐管低溫金屬退火。 再使用感光性環氧樹脂2 0塗佈於矽晶片上，經過黃光微影 製程定義形成一與外部量測電路連接之金屬接合鍵 18b(metal contact pad)與一離子感測區域21，而完成離 子感應场效電晶體基本結構1 〇 〇 a。該金屬接合鍵1 8 b是形 成接觸於該金屬連線18a。 第三Η圖係顯示本發明中，以電路板雕刻機台或者黃 光微影製程在一印刷電路板31上定義出金屬連線32。 第三I圖係顯示第三G圖之離子感應場效電晶體以銀膠 對準結合於第三Η圖中定義完成金屬連線32之印刷電路板After that, the oxide layer 4a on the back of the P-type silicon wafer 11 is removed, and then a metal bonding layer 19 is deposited on the back of the p-type silicon wafer 11 and the furnace tube is subjected to low-temperature metal annealing. Photosensitive epoxy resin 20 is applied on a silicon wafer, and a yellow light lithography process is used to define a metal contact pad 18b (metal contact pad) and an ion sensing area 21 connected to an external measurement circuit to complete the ionization. Basic structure of induction field effect transistor 100a. The metal bonding key 18b is formed in contact with the metal wiring 18a. The third figure shows that in the present invention, a metal wiring 32 is defined on a printed circuit board 31 by a circuit board engraving machine or a yellow lithography process. The third I picture shows the ion-sensing field effect transistor of the third G picture. The silver glue is aligned and combined with the printed circuit board defined in the third picture to complete the metal connection 32.
第13頁 1243899 五、發明說明（9) 31上，經1 20 C烤乾後，以打線機台進行金屬線33之打線 接合（wire bonding)後，以使該印刷電路板31上之預設金 屬連線3 2與離子感應％效電晶體基本結構1 〇 〇 &之金屬接合 鍵18b經由該金屬線33而連接導通，而形成電氣訊號連 線。如此，即可使離子感應場效電晶體的極"區域b 極區域分別連才妾於該印刷電路板31上之對應^連線 32 〇 之後，再將該印刷電路板31連同離子感應場效電晶體 基本結構100a放進真空蒸鍍或濺鍍機台，以在該閘極區域 15上沉積形成一離子感測薄膜22。 第三j圖為使用非感光性環氧樹脂4將整個印刷電路板 31上除了離子感應場效電晶體基本結構1〇〇&的離子感測區 域21以外的部分完全封裝，即完成本發明之整個離^感應 場效電晶體的製程。 在實際之應用中，本發明使用於離子檢測時，以外部 恆壓恆流1測電路連接參考電極與離子感應場效電晶體的 源極（源極與基板連接）與汲極後，同時浸泡入待測溶液， :可由恆壓恆流電路讀出一輸出電壓Λ，經由原本在不同 ΡΗ值的標準緩衝㈣巾所建立的感職錢比對， 侍到此待測溶液的pH值。 猎由以上之實施例說明可 光性環氧樹脂於離子感應場效 封裝技術，利於後段感測薄臈 ^準製程先完成恆壓恆流量測 知，本發明方法中，使用感 電晶體基本結構完成之後的 沉積，且可以目前VLSI電路 電路與訊號處理電路，再用Page 13 1243899 V. Description of the invention (9) 31. After baking at 1 20 C, wire bonding is performed on the metal wire 33 with a wire bonding machine to make the preset on the printed circuit board 31. The metal connection 32 and the metal bonding key 18b of the basic structure 100 of the ion-inductive effect crystal are connected and conducted through the metal line 33 to form an electrical signal connection. In this way, the pole " area " area of the ion-sensing field effect transistor can be connected respectively to the corresponding ^ wiring 32 on the printed circuit board 31, and then the printed circuit board 31 together with the ion-sensing field The effect transistor basic structure 100 a is put into a vacuum evaporation or sputtering machine to deposit an ion sensing film 22 on the gate region 15. The third figure is the use of a non-photosensitive epoxy resin 4 to completely encapsulate the entire printed circuit board 31 except the ion sensing region 21 of the basic structure of the ion-sensitive field effect transistor 100, and the present invention is completed. The entire manufacturing process of the induction field effect transistor. In practical applications, the present invention is used for ion detection. After the reference electrode is connected to the source of the ion-sensing field effect transistor (the source is connected to the substrate) and the drain by an external constant voltage and constant current 1 test circuit, it is simultaneously immersed. Enter the solution to be tested: the output voltage Λ can be read by the constant voltage and constant current circuit, and the pH value of the solution to be tested is served by the comparison of the sense of money established by the standard buffer towels originally at different pH values. The above examples illustrate the photoresistive epoxy-based field-effect packaging technology, which is conducive to the later stage of thin sensing. The standard process first completes the constant voltage and constant flow measurement. In the method of the present invention, the basic structure of the induction crystal is used to complete After the deposition, and can be used in the current VLSI circuit and signal processing circuit,
1243899 五、發明說明（10) 感光性環氧樹脂作 應場效電晶體上的 極氧化層，並可以 所需要的感應薄膜 效電晶體，故本發 惟以上之實施 明，凡精於此項技 而作其它種種之改 所作的種種改良及 下所界定之專利範 為硬式 保護層 承受蒸 沉積在 明確具 例說明 術者當 良及變 變化， 圍内。 光罩（Har ，裸露出 鍍與濺鍍 閘極氧化 南度的產 ，僅為本 可依據本 化。然而 當仍屬於 d Mask)以移除離子感 離子感應場效電晶體閘 的電漿或高溫，得以讓 層上’完成離子感應場 業利用價值。 發明之較佳實施例說 ，明之上述實施例說明 =，依據本發明實施例 I明之發明精神及以1243899 V. Description of the invention (10) Photosensitive epoxy resin is used as the polar oxide layer on the field effect transistor, and the required induction film effect transistor can be used. Various improvements made by other technologies and the patents defined below are for the hard protective layer to withstand vapor deposition within a clear and clear example of the surgeon's goodness and changes. Photomask (Har, barely oxidized and sputter-plated gate oxides, only based on localization. However, when it still belongs to d Mask) to remove the plasma or ion-induced field effect transistor gate plasma or The high temperature allows the layer to complete the value of the ion induction field industry. According to the preferred embodiment of the invention, the above-mentioned embodiment is explained. According to the embodiment of the invention, the spirit of the invention and the
1243899 圖式簡單說明 【圖式簡單說明】 第一圖顯示習知離子感應場效電晶體人工封裝結果之示意 圖； 第二圖係顯示本發明生醫檢體離子感應場效電晶體之較佳 實施例結構圖； 第三A〜三J圖係顯示本發明生醫檢體離子感應場效電晶體 之製造流程圖。 【圖式各元件符號之說明】 100 離子感應場效電晶體 100a 離子感應場效電晶體基本結構 11 P型矽晶片 12 氧化>5夕層 13 主動區域 14 閘極氧化層 14a 氧化層 15 閘極區域 16 源極區域 17 >及極區域 18 金屬層 18a 金屬連線 18b 金屬接合鍵 19 金屬接合層 20 感光性環氧樹脂1243899 Brief description of the drawings [Simplified description of the drawings] The first diagram shows the result of the manual packaging of a conventional ion-sensing field-effect transistor; the second diagram shows a preferred implementation of the ion-sensing field-effect transistor of a biomedical specimen of the present invention Example structure diagram; The third A ~ J diagrams show the manufacturing flow chart of the ion-sensing field effect transistor of the biomedical specimen of the present invention. [Explanation of the symbols of each element in the figure] 100 ion-sensing field-effect transistor 100a Basic structure of ion-sensing field-effect transistor 11 P-type silicon wafer 12 Oxidation> 5th layer 13 Active area 14 Gate oxide layer 14a Oxide layer 15 Gate Pole region 16 Source region 17 > Pole region 18 Metal layer 18a Metal connection 18b Metal bond 19 Metal bond 20 Photosensitive epoxy resin
第16頁 1243899 圖式簡單說明 21 離子感測區域 22 離子感測薄膜 31 印刷電路板 32 金屬連線 33 金屬線 4 非感光性環氧樹脂 200 習知離子感應場效電晶體 201 源極區域 202 >及極區域 203 閘極區域 204 離子感測區域 PI 、 P2 、 P3 光阻層 第17頁Page 16 1243899 Brief description of the diagram 21 Ion sensing area 22 Ion sensing film 31 Printed circuit board 32 Metal connection 33 Metal line 4 Non-photosensitive epoxy resin 200 Conventional ion-sensing field effect transistor 201 Source region 202 > Pole region 203 Gate region 204 Ion sensing region PI, P2, P3 Photoresist layer 第 17 页