TWI240425B - An electrode and a solar cell using the same - Google Patents

An electrode and a solar cell using the same Download PDF

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TWI240425B
TWI240425B TW92120354A TW92120354A TWI240425B TW I240425 B TWI240425 B TW I240425B TW 92120354 A TW92120354 A TW 92120354A TW 92120354 A TW92120354 A TW 92120354A TW I240425 B TWI240425 B TW I240425B
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solar cell
negative electrode
patent application
item
scope
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TW92120354A
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TW200505038A (en
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Wen-Jeng Huang
Chuan-De Huang
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Hon Hai Prec Ind Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

A negative electrode for solar cell includes a conductive substrate, a layer of semiconductor material, and a photosensitive dye layer. The conductive substrate has a porous surface and a number of nano-sized holes defined therein. The semiconductor layer is composed of a lot of semiconductor nanoparticles, and is disposed on the porous surface of the conductive substrate. The photosensitive layer is formed on the layer of semiconductor material. A solar cell using the same negative electrode is also provided.

Description

1240425 五、發明說明(1) 【發明所屬之技術領域】 本發明係關於太陽能電池,特別係關於 太陽能電池及其電極。 【先前技術】 因石油即將在本世紀内消耗殆盡的處境 尋找新能源來取代石化燃料能源,其中取之 成為重要方向。為降低成本及提高光電轉換 米量子點開發之染料敏化太陽能電池可望取 電極太陽能電池,成為二 --世紀新能源技 染料敏化太陽能電池係二十世紀九十年 的、採用表面吸附一層光敏染料之寬禁帶半 極/將太陽光直接轉換為電能之裝置。上述 之寬禁帶半導體電極稱為染料敏化半導體電 主要元成光的捕獲,半導體材料除了負載光 主要功能為電子的收集及傳導。 士染料敏化太陽能電池之工作原理係當染 :本ί I :基態躍遷到激發態,激發態上之 電Α ^ H而空穴則留在染料中’電子 能:& ’經外電路轉移至對電極,而氧化態 ;,J:::^雷氧化態之電解質在對電極 _ 凡成了電子的整個輸運過程。 大光在平板半導體電極上進行多 料起到了二t用但在外層染料之電子轉移 乍用’降低電池光電轉化效率 種染料敏化 下,人 不盡的 效率, 代傳統 術。 代發展 導體材 載有光 極,光 敏染料 類不斷 太陽能 應用奈 的矽基 起來 料作電 敏染料 敏染料 之外, 料吸收太陽光 電子迅速轉移 隨後擴散至導 之染料被還原 接受電子被還 層吸附可以增 過程中内層染 ’故半導體電 第5頁 1240425 、發明說明(2) 極在吸附單分子層染料德才& 惟’平板半導體電極表面積:對:1:佳效率。 染料之光捕獲能力較差,使電 旦二f5上早分子層 故,提供具有大比表面積“ 率在0.1%以下。 月22日公開之中國發明專利申往必要。2002年5 料敏化太陽能電池奈米晶膜電‘,0225,揭露—種染 成奈米材料,•電極表面積顯著增大+ 料設計 光電轉化效率顯著提高。 丈而使太能電池 惟,實際電極製備過程中,奈 產生異常堆積,致使電極表面積增大受制料易 電池光電轉化效率之提高。 F f j 攸而限制 本品ί提供種防正奈米、級半導體電極材料* I常餘择 表面積大、光電轉換效率高之染料敏化太::雷、:;積、 為必要。 八1努此電池電極實 【内容】 為解決先前技術中奈米級半導體電 ,積,致使電極表面積小、光電轉異 ί:之提供—種防止奈米級半導體電極材料里i 隹積、表面積大、光電轉換效率高之染料敏 、书 負極。 &月&電池 本發明之另一目的在於提供一種包括 敏化太陽能電池。 这負極之染料 本發明提供一種太陽能電池之負極,誃 電基板,一半導體材料層及一光敏染料層;其中=括一導 /、T V電基板 第6頁 1240425 五、發明說明(3) 包括一多孔表面,複數奈米級孔形成於該多孔表面;半導 體材料層形成於導電基板之多孔表面上,其中該半導體材 料^奈米級半導體微粒,奈米級半導體微粒分散於導電基 板多孔表面之奈米級孔中;光敏染料層形成於半導體材料 層上。 本發明還提供一種染料敏化太陽能電池,該太陽能電 池包括一正極,電解質以及上述之負極。 與先前技術相較,本發明提供之染料敏化半導體電極 具有以下優點:導電基板上具有孔隙,利用孔隙間隔,使 得奈米級半導體電極材料沈積時部分分散,防止奈米級半 導體電極材料異常堆積,從而增大太陽能電池電極表面 積,提高電池光電轉化效率。 【實施方式】 請參閱第一圖,本發明之染料敏化太陽能電池負極i 包括導電基板2、半導體材料層3以及光敏染料層4,'導Π電 基板2包括多孔表面,複數奈米級孔形成於該多孔表面, 半導體材料層3沈積於該多孔表面上,光敏染料層&形 半導體材料層3之表面。 "乂 " 導電基板2材質為導電玻璃。該導電基板2之多孔表面 之奈米級孔通過蝕刻製程或電化學製程(如鋁陽極處理\妒 成,孔隙率大於50%。該奈米級孔孔徑小於6〇奈米,孔、、果7 度一般小於導電基板2厚度的1/10,並根據導電基板2之&機 械強度作適當調整。孔隙以規則排列為佳,以利於半濟 材料層3之均勻沈積。 _1240425 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a solar cell, and particularly to a solar cell and an electrode thereof. [Previous technology] As oil is about to run out in this century, finding new energy sources to replace fossil fuel energy sources has become an important direction. Dye-sensitized solar cells developed to reduce costs and increase photoelectric conversion meter quantum dots are expected to take electrode solar cells, becoming the second-century new energy technology dye-sensitized solar cells in the 1990s, using a surface adsorption layer Photosensitive dyes with wide bandgap half-poles / devices that convert sunlight directly into electrical energy. The wide band gap semiconductor electrode mentioned above is called dye-sensitized semiconductor. The main element is the capture of light. The main function of semiconductor materials is to collect and conduct electrons in addition to light. The working principle of the dye-sensitized solar cell is: Ding I: The ground state transitions to the excited state, and the electric charge A ^ H on the excited state is left in the dye. 'Electronic energy: &' Transfer by external circuit To the counter electrode, and the oxidation state ;, J ::: ^ Thunder oxidation state of the electrolyte in the counter electrode _ where the entire transport process of electrons. Daguang's multi-material processing on the flat-surface semiconductor electrode has two uses, but in the electron transfer of the outer layer of the dye, it is used to reduce the photoelectric conversion efficiency of the battery, and the endless efficiency of the dye is used to replace the traditional technique. Generation of conductive materials carrying photopoles. Photosensitive dyes continue to use solar-based silicon materials as electrosensitizing dyes. The materials absorb sunlight and rapidly transfer electrons, and then diffuse to the conductive dyes. The dyes are reduced and the electrons are absorbed. Can increase the inner layer dyeing process, so the semiconductor electric p. 1240425, the description of the invention (2) The electrode is adsorbing monolayer dyes. Only the surface area of flat semiconductor electrodes: pair: 1: good efficiency. The poor light-capturing ability of dyes makes the dendrite f5 an early molecular layer, which provides a large specific surface area rate of less than 0.1%. The Chinese invention patent published on January 22 is necessary. 2002 5 Material-sensitized solar cells Nanocrystalline Film Electricity ', 0225, Revealing—A kind of dyed nanomaterial, • The electrode surface area is significantly increased + the material design ’s photoelectric conversion efficiency is significantly improved. As a result, the Taineng battery has an abnormality in the actual electrode preparation process. Accumulation results in an increase in the surface area of the electrode, which is subject to the improvement of the photoelectric conversion efficiency of the battery. F fj restricts this product. Provides a kind of anti-nano, grade semiconductor electrode materials. * I often choose a dye with a large surface area and high photoelectric conversion efficiency. Sensitization too :: Lei,:; product, is necessary. 8 1 This battery electrode is used [Content] In order to solve the nano-scale semiconductor electricity in the prior art, product, resulting in small electrode surface area, photoelectric conversion: Provided— A dye-sensitivity, book-negative electrode that prevents the accumulation of nanometer-level semiconductor electrode materials, has a large surface area, and has a high photoelectric conversion efficiency. &Amp; Month & Battery Another object of the present invention is to A negative electrode dye is provided by the present invention. The present invention provides a negative electrode of a solar cell, an electroluminescent substrate, a semiconductor material layer, and a photosensitive dye layer; 3. Description of the invention (3) It includes a porous surface, and a plurality of nano-scale pores are formed on the porous surface; a semiconductor material layer is formed on the porous surface of the conductive substrate, wherein the semiconductor material is nano-scale semiconductor particles, nano-scale semiconductors The particles are dispersed in nano-sized pores on the porous surface of the conductive substrate; a photosensitive dye layer is formed on the semiconductor material layer. The present invention also provides a dye-sensitized solar cell, which includes a positive electrode, an electrolyte, and the foregoing negative electrode. Compared with technology, the dye-sensitized semiconductor electrode provided by the present invention has the following advantages: there are pores on the conductive substrate, and the pore space is used to partially disperse the nano-scale semiconductor electrode material during deposition, thereby preventing abnormal accumulation of the nano-scale semiconductor electrode material, thereby Increase the surface area of solar cell electrodes [Embodiment] Please refer to the first figure. The negative electrode i of the dye-sensitized solar cell of the present invention includes a conductive substrate 2, a semiconductor material layer 3, and a photosensitive dye layer 4. The conductive substrate 2 includes a porous surface. Meter-sized holes are formed on the porous surface, and a semiconductor material layer 3 is deposited on the porous surface, and the surface of the photosensitive dye layer & shaped semiconductor material layer 3. " 乂 " The conductive substrate 2 is made of conductive glass. The conductive substrate 2 The nano-scale pores on the porous surface are processed by an etching process or an electrochemical process (such as aluminum anodization and envy, and the porosity is greater than 50%. The nano-scale pores have a pore diameter of less than 60 nanometers, and the pores and holes are generally less than 7 degrees. The thickness of the conductive substrate 2 is 1/10, and it is appropriately adjusted according to the & mechanical strength of the conductive substrate 2. The pores are preferably arranged regularly to facilitate the uniform deposition of the semi-economic material layer 3. _

1240425 五、發明說明(4) 兮丰^=層3之半導體材料為奈米級半導體微粒, 化;或二氧化鈦等具有光電轉換功能 本實施例採用二氧化鈦微粒。二氧 於20奈米,優選小於5奈米。該二氧化鈦層 兴二i丰f V電基板2之多孔纟面’三氧化欽微粒部分分 及孔中。該半導體材料層3之主要功能為負載光 敏木料層4以及工作過程中電子之收集及傳導。 光敏染料層4形成於上述半導體材料層3的表面,該層 之主要功能為吸收太陽光,與半導體材料層3共同完成光 電轉換。其中光敏染料包括方酸類染料、部花菁類染料、 羅丹明類染料、偶氮苯類染料、半菁類染料以及金屬配合 物。因不同染料對不同頻率之光吸收能力不同,可採用多 種染料之組合,以提高光之吸收率。 本貫施例光敏染料採用金屬釕之配合物,如1240425 V. Description of the invention (4) Xifeng ^ = The semiconductor material of layer 3 is nano-sized semiconductor fine particles; or titanium dioxide has photoelectric conversion function. This embodiment uses titanium dioxide fine particles. Dioxin is below 20 nm, preferably below 5 nm. The titanium dioxide layer is partially divided into pores on the porous surface of the porous substrate V3 of the fV electric substrate 2. The main function of the semiconductor material layer 3 is to load the photosensitive wood layer 4 and to collect and conduct electrons during operation. The photosensitive dye layer 4 is formed on the surface of the semiconductor material layer 3 described above. The main function of this layer is to absorb sunlight and complete the photoelectric conversion with the semiconductor material layer 3 together. The photosensitive dyes include squaric acid dyes, merocyanine dyes, rhodamine dyes, azobenzene dyes, semicyanine dyes, and metal complexes. Because different dyes have different light absorption capabilities at different frequencies, a combination of multiple dyes can be used to increase the light absorption rate. In this example, the photosensitive dye uses a complex of metal ruthenium, such as

Ruthenium-535 ,即Ru(4,4,—dicarboxy-2,2,- bipyridine)2(NCS)2。將其配製成一定濃度之溶液或凝 膠’通過浸泡的方式使其吸附於半導體材料層3上。 請參閱第二圖,本發明還提供一染料敏化太陽能電池 5,該太陽能電池5包括一正極6、電解質γ以及一本發明所 提供之負極1。其中,電解質7可為碘/碘化鋰電解質,正 極6可為一多孔碳電極或鍍有鉑或金層之導電基板。 與先前技術相較,本發明提供之染料敏化半導體電極 具有以下優點·導電基板上具有奈米級孔,利用孔隙間 隔’使得奈米級半導體電極材料沈積時部分分散,防止奈 第8 1 1240425 五、發明說明(5) ' '~' ---- 米級半導體電極材料異常堆積1而增大太陽能電池電極 表面積,提高電池光電轉化效率。 綜上所述,本發明確已符合發明專利之要件,遂依法 提出專利申請。惟,以上所述者僅為本發明之較佳實施 例,自不肥以此限製本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化,皆 應涵蓋於以下申請專利範圍内。Ruthenium-535, which is Ru (4,4, -dicarboxy-2,2, -bipyridine) 2 (NCS) 2. It is formulated into a solution or gel 'with a certain concentration to be adsorbed on the semiconductor material layer 3 by immersion. Referring to the second figure, the present invention also provides a dye-sensitized solar cell 5 including a positive electrode 6, an electrolyte γ, and a negative electrode 1 provided by the present invention. The electrolyte 7 may be an iodine / lithium iodide electrolyte, and the positive electrode 6 may be a porous carbon electrode or a conductive substrate plated with a platinum or gold layer. Compared with the prior art, the dye-sensitized semiconductor electrode provided by the present invention has the following advantages: The nano-scale pores are provided on the conductive substrate, and the pore interval is used to make the nano-scale semiconductor electrode material partially dispersed during the deposition to prevent nano-eighth 1 1240425 V. Description of the invention (5) '' ~ '---- Meter-level semiconductor electrode materials are abnormally stacked 1 to increase the surface area of the solar cell electrode and improve the photoelectric conversion efficiency of the battery. In summary, the present invention has indeed met the requirements for an invention patent, and a patent application was filed in accordance with the law. However, the above are only preferred embodiments of the present invention, and they are not intended to limit the scope of patent application in this case. All equivalent modifications or changes made by those skilled in the art of the case with the aid of the spirit of the present invention shall be covered by the scope of the following patent applications.

第9頁 1240425 圖式簡單說明 第一圖係本發明染料敏化太陽能電池負極結構示意 圖。 第二圖係本發明染料敏化太陽能電池内部結構示意 圖。 【主要元件符號說明】 負極 1 導電基板 2 半導體材料層 3 光敏染料層 4 太陽能電池 5 正極 6 電解質 ΊPage 9 1240425 Brief description of the drawings The first diagram is a schematic diagram of the structure of the anode of a dye-sensitized solar cell of the present invention. The second figure is a schematic diagram of the internal structure of the dye-sensitized solar cell of the present invention. [Description of main component symbols] Negative electrode 1 Conductive substrate 2 Semiconductor material layer 3 Photosensitive dye layer 4 Solar cell 5 Positive electrode 6 Electrolyte Ί

Claims (1)

1240425 六、申請專利範圍 — 1 · 一種太陽能電池負極,該負極包括: 一導電基板, 一半導體材料層,及 一光敏染料層; ▲其中導電基板包括一多孔表面,複數奈米級孔形成於 該多孔表面;半導體材料層形成於該導電基板之多孔 表面上;光敏染料層形成於半導體材料層上。 2·如申請專利範圍第1項所述之太陽能電池極,其中導 電基板為導電玻璃。 3 ·如申請專利範圍第丨項所述之太陽能電池負極,其中導 電基板孔隙率大於50%。 、 ’、 4·如申請專利範圍第丨項所述之太陽能電池負極,其中導 電基板之奈米級孔孔徑小於6 〇奈米。 5·如申請專利範圍第丨項所述之太陽能電池負極,豆中導 電基板之奈米級孔孔深度小於導電基板厚度之^10。 6·如申請專利範圍第1項所述之太陽能電池負極,其中導 電基板之奈米級孔成點陣規則排列。 、 /、 7·如申請專利範圍第1項所述之太陽能電池負極,其中導 電基板之奈米級孔通過蝕刻製程形成。 8·如申請專利範圍第1項所述之太陽能電池負極,其中導 電基板之奈米級孔通過電化學製程形成。 9 ·如申請專利範圍第8項所述之太陽能電池負極,其中導 電基板之奈米級孔通過鋁陽極處理形成。 1 〇·如申請專利範圍第1項所述之太陽能電池負極,其中該1240425 VI. Scope of patent application — 1 · A solar cell negative electrode, the negative electrode includes: a conductive substrate, a semiconductor material layer, and a photosensitive dye layer; ▲ wherein the conductive substrate includes a porous surface, and a plurality of nano-sized pores are formed in the The porous surface; the semiconductor material layer is formed on the porous surface of the conductive substrate; the photosensitive dye layer is formed on the semiconductor material layer. 2. The solar cell electrode according to item 1 of the patent application scope, wherein the conductive substrate is conductive glass. 3. The solar cell negative electrode as described in item 丨 of the patent application, wherein the conductive substrate has a porosity greater than 50%. 4) The negative electrode of a solar cell according to item 丨 in the scope of application for a patent, wherein the nano-scale hole diameter of the conductive substrate is less than 60 nanometers. 5. According to the solar cell negative electrode described in item 丨 of the patent application, the nano-scale hole depth of the conductive substrate in the bean is less than ^ 10 of the thickness of the conductive substrate. 6. The negative electrode of a solar cell as described in item 1 of the scope of patent application, wherein the nano-scale holes of the conductive substrate are regularly arranged in a dot matrix. 7 / The solar cell negative electrode according to item 1 of the scope of patent application, wherein the nano-scale holes of the conductive substrate are formed by an etching process. 8. The solar cell negative electrode according to item 1 of the scope of the patent application, wherein the nano-scale holes of the conductive substrate are formed by an electrochemical process. 9 · The solar cell negative electrode according to item 8 of the scope of patent application, wherein the nano-scale holes of the conductive substrate are formed by aluminum anode treatment. 1 〇 · The solar cell negative electrode described in item 1 of the scope of patent application, wherein 12404251240425 六、申請專利範圍 半導體材料層之半導體材料為奈米級半導體微粒。 1 1 ·如申請專利範圍第1 〇項所述之太陽能電池負極,其中 該半導體材料層包括二氧化鈦微粒。 1 2 ·如申請專利範圍第1 〇項所述之太陽能電池負極,其中 該半導體材料層包括氧化鋅微粒。 1 3 ·如申請專利範圍第1 〇項所述之太陽能電池負極,其中 該半導體微粒粒徑小於2 〇奈米。 1 4·如申請專利範圍第1 3項所述之太陽能電池負極,其中 該半導體微粒粒徑小於5奈米。 1 5 ·如申請專利範圍第1項所述之太陽能電池負極,其中該 鲁 光敏染料層包括方酸類染料、部花青類染料、羅丹明 類染料、偶氮苯類染料、半菁類染料或金屬配合物中 一種或其組合。 1 6 ·如申請專利範圍第1 5項所述之太陽能電池負極’其中 該光敏染料為釕配合物。 1 7· —種染料敏化太陽能電池’包括 一正極 , 一負極,及6. Scope of patent application The semiconductor material of the semiconductor material layer is nano-sized semiconductor particles. 1 1 · The solar cell negative electrode according to item 10 of the patent application scope, wherein the semiconductor material layer includes titanium dioxide particles. 1 2. The solar cell negative electrode according to item 10 of the patent application scope, wherein the semiconductor material layer includes zinc oxide particles. 1 3. The solar cell negative electrode according to item 10 of the patent application scope, wherein the particle size of the semiconductor particles is less than 20 nm. 14. The negative electrode of a solar cell according to item 13 of the scope of patent application, wherein the particle size of the semiconductor particles is less than 5 nm. 1 5 · The solar cell negative electrode according to item 1 of the scope of the patent application, wherein the photosensitivity dye layer includes squaric acid dyes, merocyanine dyes, rhodamine dyes, azobenzene dyes, hemicyanine dyes, or One or a combination of metal complexes. 16 · The negative electrode of a solar cell according to item 15 of the scope of patent application, wherein the photosensitive dye is a ruthenium complex. 1 7 · —A dye-sensitized solar cell ’includes a positive electrode, a negative electrode, and 介於正極於負極之間之電解質 其中負極包括: 一導電基板, 一半導體材料層,及 .光毕料層 ; 其中導電基i包括一多孔表面,複數奈米級孔形成An electrolyte between a positive electrode and a negative electrode, wherein the negative electrode includes: a conductive substrate, a layer of semiconductor material, and a photoresist layer; wherein the conductive base i includes a porous surface, and a plurality of nanometer-sized pores are formed. 頁 1240425 六、申請專利範圍 於該多孔表面;半導體材料層形成於該導電基板之多 孔表面上;光敏染料層形成於半導體材料層上。 1 8.如申請專利範圍第1 7項所述之太陽能電池,其中電解 質為碘/碘化鋰電解質。 1 9.如申請專利範圍第1 7項所述之太陽能電池,其中正極 為一多孔碳電極。 2 0.如申請專利範圍第1 7項所述之太陽能電池,其中正極 包括一導電基板,導電基板上鍍有鉑或金。Page 1240425 6. The scope of patent application is on the porous surface; the semiconductor material layer is formed on the porous surface of the conductive substrate; the photosensitive dye layer is formed on the semiconductor material layer. 1 8. The solar cell according to item 17 of the scope of patent application, wherein the electrolyte is an iodine / lithium iodide electrolyte. 19. The solar cell according to item 17 of the scope of patent application, wherein the positive electrode is a porous carbon electrode. 20. The solar cell according to item 17 of the scope of the patent application, wherein the positive electrode includes a conductive substrate, and the conductive substrate is plated with platinum or gold. 第13頁Page 13
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TWI382542B (en) * 2008-09-30 2013-01-11 Big Sun Energy Technology Inc Solar cell with embedded electrode
TWI426615B (en) * 2007-12-21 2014-02-11 Jusung Eng Co Ltd Thin film type solar cell and method for manufacturing the same

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TWI385215B (en) * 2007-12-20 2013-02-11 Chung Shan Inst Of Science Ruthenium Metal Complexes Dyes and Their Solar Cells

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TWI426615B (en) * 2007-12-21 2014-02-11 Jusung Eng Co Ltd Thin film type solar cell and method for manufacturing the same
TWI382542B (en) * 2008-09-30 2013-01-11 Big Sun Energy Technology Inc Solar cell with embedded electrode

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