TWI238897B - Master plate manufacturing method of light control film - Google Patents
Master plate manufacturing method of light control film Download PDFInfo
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1238897 五、發明說明(1)1238897 V. Description of the invention (1)
V 【發明所屬之技術領域】 本發明係有關一種L i g h t C ο n t r ο 1 F i 1 m (光控制薄膜 )之母版製造方法。 【先前技術】 傳統光控制薄膜於製造時,係將薄膜材料塗佈於母版 上,再經滾壓成型機滾壓而形成薄膜狀態;然而,現有光 _ 控制薄膜(L i g h t C 〇 n t r〇1 F i 1 m )的母版係以石夕晶片經過 翻鑄成鎳版之母版,於製造過程中即會產生下述的回題; “ 1 ·於矽晶片9 0 (即為半導體業之晶圓)通常製造成五 吋、六吋、八吋或十二吋的固定尺寸,因此,為了符 〇 合滾壓成型機的滾壓尺寸,翻鑄而成的鎳版9 1則必 需經過一次的裁切及接合過程,請參閱第3圖所示, 矽晶片9 0於製造過程中之裁切,會使可用的面積減 少,雖然再經過多數已裁切之矽晶片9 ◦,翻製成之 鎳版9 1再接合,形成具預定面積者,其製造過程顯 然較為煩雜,且接裁切及接合皆必需符合精度的要 求,而使鎳版9 1於裁切及接合,皆需依靠多數的夾 ’ 治具方可完成(圖中未示),如此製造成亦會較高。 2 ·各鎳版9 1於接合之後,各鎳版9 1之間的接缝9 2 ,會在製造光控制薄膜時,產生薄膜材料於接缝9 2 位置,承受滾壓成型機滾壓之壓力不平均,而易斷 裂,因此製造之良率較低(請參閱第4圖所示)。 3 ·光控制薄膜在製造過程中,各鎳版9 1之接缝9 2會 - 使光控制薄膜於製造完成後,其光學結構9 3會產生V [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a master of Lig h t C ο n t r ο 1 F i 1 m (light control film). [Previous Technology] Traditional light control films are manufactured by coating the film material on a master and then rolling by a roll forming machine to form a film state; however, existing light control films (Light C 〇ntr〇 The master of 1 F i 1 m) is a master made of Shi Xi wafer after being cast into a nickel plate. During the manufacturing process, the following questions will be generated; "1 · In silicon wafer 9 0 (that is, the semiconductor industry) Wafers) are usually manufactured in fixed sizes of five inches, six inches, eight inches, or twelve inches. Therefore, in order to conform to the rolling dimensions of the roll forming machine, the nickel plate 9 1 that has been recast must pass through For a single cutting and bonding process, please refer to Figure 3. The cutting of the silicon wafer 90 during the manufacturing process will reduce the usable area, although it will pass through most of the cut silicon wafers. The finished nickel plate 91 is rejoined to form a predetermined area. The manufacturing process is obviously complicated, and the cutting and joining must meet the requirements of precision. Therefore, the nickel plate 91 needs to rely on cutting and joining. Most clamps can be completed (not shown in the figure). The production will also be higher. 2 · After the nickel plates 9 1 are joined, the seam 9 2 between the nickel plates 9 1 will produce a film material at the seam 9 2 position during the manufacture of the light control film and withstand rolling. The rolling pressure of the compression molding machine is uneven and easy to break, so the manufacturing yield is low (see Figure 4). 3 · During the manufacturing process of the light control film, each nickel plate 9 1 has a seam 9 2 will-After the light control film is manufactured, its optical structure 9 3 will be produced
第5頁 1238897 五、發明說明(2) t 不連續之狀況,而形成不可使用的部份9 4,這些不 可使用的部份9 4即必需去除,如此將限制光控制薄 膜可使用的尺寸大小,亦造成材料的浪費。 4 ·矽晶片9 0經過黃光製程形成光學結構9 3 ,並經電 麵翻核成錄版9 1 ’過程中因梦晶片9 0材料的特性 ,使得於剝離鎳版9 1時,矽晶片9〇極易發生破裂 . ,破裂之矽晶片9 0會殘存於鎳版9 1之光學結構9 3 3中,使此鎳版9 1無法使用,或必需另外的加工 ' 程序,方可去除殘存之矽晶片9 0 ,亦會增加製造之Page 5 1238897 V. Description of the invention (2) t Discontinuous conditions, and the unusable parts 9 4 are formed. These unusable parts 9 4 must be removed, which will limit the size of the light control film. It also causes waste of materials. 4 · The silicon wafer 90 was formed into an optical structure 9 3 through a yellow light process, and was then re-cored to form a recording plate 9 1 '. Due to the characteristics of the material of the dream wafer 90, the silicon wafer was peeled off when the nickel plate 91 was peeled. 90 is very easy to crack. The cracked silicon wafer 90 will remain in the optical structure 9 3 3 of the nickel plate 9 1, making this nickel plate 9 1 unusable or requiring additional processing to remove the remaining The silicon wafer 90 will also increase the manufacturing
成本。 H 【發明内容】 本發明之主要目的,在於解決上述的問題而提供一種 Light Control Film (光控制薄膜)之母版製造方法,藉 由玻璃基板並不需要經過裁切即可當作基板之特性,使製 造成之鎳薄片,不需要經過接合之過程,因此產生之該鎳 薄片中並不會產生接缝所產生之暇疵,因此於滾壓製造而 成之光控制薄膜亦不會有接缝之暇疵,故其能夠使用的面 積將不受限,亦可減少材料之損失。同時本發明於製造時 亦不需要複雜的夾治具,故可降低製造成本。且完成之鎳 薄片母版不會使薄膜材料於滾壓時受力不均而破裂,以確 | 保生產時較高之良率;更不因接缝而產生不連續之狀況, I所以不會有不可使用的部份,如此可降低廢料的產生,玻 璃基板更可確保該鎳薄片之母版穩定。 · 為達前述各目的,本發明係為一種Light Control ^cost. H [Summary of the Invention] The main purpose of the present invention is to solve the above-mentioned problems and provide a method for manufacturing a light control film (light control film), which can be used as a substrate without cutting through the glass substrate. , So that the manufactured nickel sheet does not need to go through the joining process, so the nickel sheet does not produce the flaws caused by the seams, so the light control film manufactured by rolling does not have a joint. Due to the flaws in the seam, the area that can be used will not be limited, and the loss of materials can also be reduced. At the same time, the present invention does not require complicated clamping fixtures during manufacturing, so the manufacturing cost can be reduced. And the completed nickel foil master will not cause the film material to be cracked due to uneven force during rolling, so as to ensure a high yield during production; not to cause discontinuities due to seams, so I will not have The unusable part can reduce the generation of waste, and the glass substrate can ensure the stability of the master of the nickel sheet. In order to achieve the foregoing objects, the present invention is a Light Control ^
1238897 五、發明說明(3) ^ F i 1 m (光控制薄膜)之母版製造方法,其包括下列步驟: 第一步驟:提供一平坦之玻璃基板,該基板具預定尺 寸; 第二步驟:於該玻璃基板上鍍上一第一金屬層; 第三步驟:於該玻璃基板上之第一金屬層頂面均勻塗佈一 光阻層; -1238897 V. Description of the invention (3) ^ F i 1 m (light control film) master manufacturing method, which includes the following steps: First step: providing a flat glass substrate having a predetermined size; second step: Plating a first metal layer on the glass substrate; third step: uniformly coating a photoresist layer on the top surface of the first metal layer on the glass substrate;-
第四步驟··於該光阻層上覆蓋一光罩,並進行曝光,該光 罩係具有多數預定形狀孔洞,以使該光阻層依 預定形狀孔洞之曝光,而形成多數曝光部份及 多數未曝光部份; U 第五步驟:將該結合光阻層之玻璃基板浸入顯影液中,該 光阻層之該多數曝光部份及多數未曝光部份二 者之一進行顯影#刻去除,並使該第一金屬層 相對於光阻層受蝕刻部份,顯露出預進行下一 步驟之多數蝕刻部份; 第六步驟:將顯露出該多數蝕刻部份之玻璃基板浸入一金 屬蝕刻液中,將該第一金屬層之多數蝕刻部份 蝕刻去除,該第一金屬層則形成多數保留部份 第七步驟:將該剩餘的光阻層剝離,並同時清潔顯露出來 φ 之玻璃基板,該第一金屬層之多數保留部份即 被顯露出來; 第八步驟:於該第一金屬層上覆蓋一遮蔽式罩體,該遮蔽 · 式罩體於該第一金屬層之多數保留部份上分別Fourth step ... Cover the photoresist layer with a photomask and perform exposure. The photomask has a plurality of holes of a predetermined shape, so that the photoresist layer is exposed according to the holes of the predetermined shape to form most exposed portions and Most unexposed parts; U Fifth step: immerse the glass substrate combined with a photoresist layer in a developing solution, and develop one of the most exposed portions and most unexposed portions of the photoresist layer to be developed. And make the first metal layer be etched relative to the photoresist layer to reveal most of the etched part that is pre-performed to the next step; the sixth step: immerse the glass substrate showing the majority of the etched part into a metal etch In the liquid, most of the etched portion of the first metal layer is etched away, and the first metal layer forms most of the remaining portion. Step 7: peel off the remaining photoresist layer and clean the glass substrate exposed at the same time. , Most of the remaining portions of the first metal layer are exposed; the eighth step: covering the first metal layer with a shielding cover, the shielding cover covering the majority of the first metal layer On each
第7頁 1238897 五、發明說明(4) ^ 具有預定圖形之穿透孔,並使該第一金屬層及 該玻璃基板與外界隔離; 第九步驟:於該該第一金屬層之多數保留部份上,且於該 遮蔽式罩體之穿透孔位置,以蒸鍍或濺鍍方式 鏟上一第二金屬層,再將該遮蔽式罩體去除; 第十步驟:於該第一金屬層與該第二金屬層與裸露之玻璃 -基板鍍上一導電層; 第十一步驟··於該導電層上電鑄一鎳薄片; 1 第十二步驟:將該鎳薄片與該第一金屬層,該第二金屬層 、及玻璃基板分離,以形成一光控制薄膜之 母版者;該鎳薄片上形成與該第一金屬層與 該第二金屬層之二階式微結構相對之二階式 凹槽。 本發明之上述及其他目的與優點,不難從下述所選用 實施例之詳細說明與附圖中,獲得深入了解。 當然,本發明在某些另件上,或另件之安排上容許有 所不同,但所選用之實施例,則於本說明書中,予以詳細 說明,並於附圖中展示其構造。 【實施方式】 請參閱第1圖至第2圖,圖中所示者為本發明所選用 4 之實施例結構,此僅供說明之用,在專利申請上並不受此 種結構之限制。 本實施例於L i g h t C ο n t r ο 1 F i 1 m (光控制薄膜)之母 -版製造方法,其包括下列步驟:Page 7 1238897 V. Description of the invention (4) ^ A penetrating hole with a predetermined pattern and isolating the first metal layer and the glass substrate from the outside; Step 9: Most of the remaining portions of the first metal layer Partly, and shovel a second metal layer by evaporation or sputtering at the position of the penetration hole of the shielded cover, and then remove the shielded cover; tenth step: on the first metal layer A conductive layer is plated with the second metal layer and the bare glass-substrate; eleventh step ... electroforming a nickel sheet on the conductive layer; twelfth step: the nickel sheet and the first metal Layer, the second metal layer, and the glass substrate are separated to form a master of a light-controlling film; a two-step recess is formed on the nickel sheet opposite to the two-step microstructure of the first metal layer and the second metal layer groove. The above and other objects and advantages of the present invention can be easily understood from the detailed description and accompanying drawings of the selected embodiments below. Of course, the present invention allows some differences in the arrangement or arrangement of other parts, but the selected embodiment is described in detail in this specification and its structure is shown in the drawings. [Embodiment] Please refer to FIG. 1 to FIG. 2. The figure shows the structure of the embodiment 4 of the present invention. This is for illustrative purposes only and is not limited by this structure in patent applications. In this embodiment, a mother-to-plate manufacturing method of L i g h t C ο n t r ο 1 F i 1 m (light control film) includes the following steps:
第8頁 1238897 五、發明說明(5) , 第一步驟:提供一平坦之玻璃基板1 0 ,該基板1 0 具預定尺寸,其尺寸係以提供滾壓成型機(圖中未示)滾 壓範圍者; 第二步驟:於該玻璃基板1 〇上,以蒸鍍或濺鍍方式 鐘上一第一金屬層1 1 ,本實施例係以鉻金屬(C r )為 第一金屬層11 ,並使該第一金屬層11厚度維持在 . 0.5um〜lum之間。 第三步驟:於該玻璃基板1 〇上之第一金屬層1 1頂 ' 面均勻塗佈一光阻層1 2 ,該光阻層1 2可為正型光阻或 負型光阻,如:Clariant A ζ ρ462〇;^ 且其黏度介於100〜1600厘泊(cps)之間。 第四步驟:將第三步驟塗佈光阻層1 2後之玻璃基板 1〇經過9 3 X:,3分鐘之預熱,再於其頂面覆蓋光罩2 ,以U V光(1 2 m j ,曝光2 5秒左、右)進行曝光, 該光罩2係具有多數預定形狀孔洞2 1 ,以使該光阻層1 2被預定形狀之曝光,而形成多數曝光部份1 2 1及多數 未曝光部份1 2 2。 第五步驟:將第四步驟曝光過後之半成品浸入顯影液 3中5該顯影液3係為A ζ - 4 0 0 K之顯影液,該光阻層1 2 中之該多數曝光部份1 2 1或未曝光部份1 2 2進行顯影 j 蝕刻;本實施例係將多數曝光部份1 2 1去除為說明,以 光阻層1 2之多數曝光部份1 2 1為例,該曝光部份1 2 1受到顯影液之蝕刻,而厚度向下變薄而去除,並使該第 · 一金屬層1 1 ,於相對於該多數曝光部份1 2 1 ,顯露出Page 8 1238897 V. Description of the invention (5), the first step: provide a flat glass substrate 10, the substrate 10 has a predetermined size, and its size is provided by a roll forming machine (not shown) for rolling The second step: a first metal layer 1 1 is deposited on the glass substrate 10 by evaporation or sputtering. In this embodiment, chromium metal (C r) is used as the first metal layer 11. The thickness of the first metal layer 11 is maintained between 0.5um ~ lum. The third step: a photoresist layer 12 is evenly coated on the top surface of the first metal layer 11 on the glass substrate 10, and the photoresist layer 12 may be a positive type photoresistor or a negative type photoresist, such as : Clariant A ζ ρ462〇; and its viscosity is between 100 ~ 1600 centipoise (cps). The fourth step: the glass substrate 10 coated with the photoresist layer 12 in the third step is subjected to 9 3 X :, preheating for 3 minutes, and then the top surface is covered with a photomask 2 with UV light (1 2 mj (2, 5 seconds left and right) for exposure. The mask 2 has a plurality of holes 21 with a predetermined shape, so that the photoresist layer 12 is exposed with a predetermined shape to form a majority of exposed portions 1 2 1 and a majority. Unexposed section 1 2 2. Fifth step: The semi-finished product after the exposure in the fourth step is immersed in the developer 3 5 The developer 3 is a developer of A ζ-4 0 0 K, and the majority of the exposed portions of the photoresist layer 1 2 1 2 1 or unexposed portion 1 2 2 is developed and etched; in this embodiment, most of the exposed portions 1 2 1 are removed as an illustration, and most of the exposed portions 1 2 1 of the photoresist layer 12 are taken as an example. The portion 1 2 1 is etched by the developing solution, and the thickness is reduced downward to be removed, and the first metal layer 1 1 is exposed relative to the majority exposed portion 1 2 1.
第9頁 1238897 五、發明說明(6) 預進行下一步驟之多數蝕刻部份1 1 1 。 第六步驟:將完成第五步驟之半成品浸入一金屬蝕刻 液4辛(該金屬#刻液4係以加拿大C y a n t e k c〇rp oration製之型號Cr-9s為例),進行钱刻該第一金 屬層1 1 ,該第一金屬層1 1之多數蝕刻部份1 1 1因不 受該光阻層1 2之隔離保護,故該多數蝕刻部份1 1 1即 被蝕刻而去除,僅保留該第一金屬層1 1之多數保留部份 112° 第七步驟:以化學或機械加工方式將該剩餘的光阻層 1 2剝離,並同時清潔顯露出來之玻璃基板1 0 ,該第一 金屬層1 1之多數保留部份1 1 2即被顯露出來。 第八步驟:於該第一金屬層1 1上覆蓋一遮蔽式罩體 5 ,該遮蔽式罩體5於該第一金屬層1 1之多數保留部份 1 1 2上分別具有預定圖形之穿透孔5 1 ,並使該第一金 屬層1 1及該玻璃基板1 0與外界隔離。 第九步驟:於該第一金屬層1 1之多數保留部份1 1 2上,且於該遮蔽式罩體5之穿透孔5 1位置,以蒸鍍或 激鍛方式鐘上一第二金屬層1 3 ,該第二金屬層1 3係以 鉻金屬(C r )為材質,並使該第二金屬層1 3厚度維持 在0.5uui〜luni之間,再將該遮式罩體5去除。 第十步驟:完成第九步驟後,以電鍍或無電鍍方式鍍 上一導電層14 ,該導電層14係覆蓋該第一金屬層1 1 與該第二金屬層1 3與裸露之玻璃基板1〇。 第十一步驟:於該導電層1 4上電鑄一鎳薄片6〇。Page 9 1238897 V. Description of the invention (6) Most of the etched parts in the next step are preliminarily 1 1 1. The sixth step: immerse the semi-finished product that has completed the fifth step in a metal etching solution 4 oct. Layer 1 1, most of the etched portion 1 1 1 of the first metal layer 11 is not protected by the isolation of the photoresist layer 12, so the majority of the etched portion 1 1 1 is removed by etching, leaving only the Most of the remaining portions of the first metal layer 11 are 112 °. The seventh step: peel off the remaining photoresist layer 12 by chemical or mechanical processing, and clean the exposed glass substrate 10 at the same time. The first metal layer The majority of the remaining parts of 1 1 1 2 are revealed. Eighth step: covering the first metal layer 11 with a shielding cover 5, the shielding cover 5 has a predetermined pattern on each of the most reserved portions 1 1 2 of the first metal layer 11. The through hole 5 1 isolates the first metal layer 11 and the glass substrate 10 from the outside. Ninth step: on the most reserved portions 1 1 2 of the first metal layer 1 1 and at the position of the penetrating hole 51 of the shielding cover 5, a second is deposited by evaporation or forging The metal layer 1 3 is made of chromium metal (C r), and the thickness of the second metal layer 13 is maintained between 0.5uui and luni, and then the cover 5 Remove. Tenth step: After the ninth step is completed, a conductive layer 14 is plated by electroplating or electroless plating, and the conductive layer 14 covers the first metal layer 1 1 and the second metal layer 13 and the bare glass substrate 1 〇. Eleventh step: electroforming a nickel sheet 60 on the conductive layer 14.
第1〇頁 1238897 五、發明說明(7) , 第十二步驟:將該鎳薄片6 0與該第一金屬層1 1 、 該第二金屬層1 3、及玻璃基板1 0分離,以形成一光控 制薄膜之母版者;該鎳薄片6 0更藉由該第一金屬層1 1 與該第二金屬層1 3之二階式微結構,而形相對之二階式 凹槽6 1 。 本發明之母版於製造過程中,該玻璃基板1 〇並不需 _ 要經過裁切,且製造成之鎳薄片6 0不需要經過接合之過 程,因此產生之該鎳薄片6 0中並不會產生接缝之暇疵, ’ 因此,由滾壓製造而成之光控制薄膜7 0亦不會有接缝之 暇疵,故其能夠使用的面積將不受限,亦可減少材料之損 失。同時本發明於製造時亦不需要複雜的夾治具,故可降 低製造成本。 由於該製造而成之鎳薄片6 0 ,並不會有如習用技術 矽晶片製造之鎳版有接缝問題,因此,以滾壓成型機滾壓 光控制薄膜7 0時(請參閱第2圖所示),並不會使薄膜 材料於滾壓時受力不均而破裂,以確保生產的良率。 再者,本發明之鎳薄片6 0不會有接缝之問題,因此 生產出來之光控制薄膜7 0上光學結構7 1 ,亦不會有因 接缝而產生不連續之狀況,所以不會有不可使用的部份, 如此可降低廢料的產生,且光控制薄膜7 0可使用的面積 $ 不受限,以符合不同場合之需求。 另外,該玻璃基板1 0材質之特性,使經電鑄後之鎳 薄片6 0欲剝離時,並不會有破裂的情形產生,故可確保 一 該鎳薄片6 0之母版穩定。Page 10 1238897 V. Description of the invention (7), Twelfth step: Separate the nickel sheet 60 from the first metal layer 1 1, the second metal layer 1 3, and the glass substrate 10 to form A master of a light-controlling film; the nickel sheet 60 uses a two-stage microstructure of the first metal layer 1 1 and the second metal layer 13, and a second-stage groove 6 1. In the manufacturing process of the master of the present invention, the glass substrate 10 does not need to be cut, and the manufactured nickel sheet 60 does not need to go through the bonding process, so the nickel sheet 60 produced is not There will be seam flaws. Therefore, the light control film 70 manufactured by rolling will not have seam flaws, so the area that can be used will not be limited, and the loss of materials can be reduced. . At the same time, the present invention does not require complicated clamping fixtures during manufacture, so the manufacturing cost can be reduced. Because the manufactured nickel sheet 60 has no seam problem as the nickel plate manufactured by the conventional technology silicon wafer, when the light control film 70 is rolled with a roll forming machine (see Figure 2) (Shown), it will not cause the film material to rupture due to uneven force during rolling to ensure the production yield. In addition, the nickel sheet 60 of the present invention does not have the problem of seams, so the optical structure 7 1 on the light control film 70 produced does not have discontinuities due to seams, so it does not There are unusable parts, which can reduce the generation of waste, and the usable area $ of the light control film 70 is not limited to meet the needs of different occasions. In addition, due to the characteristics of the material of the glass substrate 10, when the electroformed nickel sheet 60 is to be peeled off, there will be no breakage, so it is possible to ensure the stability of the nickel sheet 60 master.
第11頁 1238897 五、發明說明(8) 以上所述實施例之揭示係用以說明本發明,並非用以 限制本發明,故舉凡數值之變更或等效元件之置換仍應隸 屬本發明之範®壽。 由以上詳細說明,可使熟知本項技藝者明瞭本發明的 確可達成前述目的,實已符合專利法之規定,爰提出專利 申請。Page 11 1238897 V. Description of the invention (8) The disclosure of the embodiments described above is used to illustrate the present invention and is not intended to limit the present invention. Therefore, any change in numerical values or replacement of equivalent components should still belong to the scope of the present invention. ® Shou. From the above detailed description, those skilled in the art can understand that the present invention can indeed achieve the aforementioned purpose, and it has indeed complied with the provisions of the Patent Law, and filed a patent application.
第12頁 1238897 圖式簡單說明 【圖式簡單 .第1圖 說明 係本 之 第2圖係本 膜 缝 第3圖係習 裁 第4圖係習 控 ] 部分 發明L i g h t C ο n t r ο 1 F i 1 m (光控制薄膜) 母版製造方法之流程示意圖。 發明之光控制薄膜母版,於翻製光控制薄 時之示意圖,其中顯示母版之鎳薄片無接 ,並不會造成破裂之情形。 用光控制薄膜母版之製造方法之中矽晶片 切與接合之動作示意圖。 用光控制薄膜母版之接缝位置,於製造光 制薄膜時,會造成破裂之示意圖。 [圖號說明 (習用 硬晶片9〇 接缝9 2 不可使用的部份9 4 (本發明部分) 玻璃基板1〇 蝕刻部份1 1 1 光阻層1 2 未曝光部份1 2 2 導電層1 4 光罩2 顯影液3 金屬#刻液4 鎳版9 1 光學結構9 3 第一金屬層1 1 多數保留部份1 曝光部份1 2 1 第二金屬層1 3 孔洞2 1 2Page 121238897 Simple explanation of the diagram [The diagram is simple. The first diagram is the second picture of the book. The third picture is the custom. The fourth picture is the custom control.] Part of the invention is Right C ο ntr ο 1 F i 1 m (light control film) Schematic diagram of the manufacturing method of the master. The light control film master of the invention is a schematic diagram when the light control film is turned over, which shows that the nickel sheet of the master is not connected, and it will not cause cracks. Schematic diagram of cutting and bonding of silicon wafers in a manufacturing method of a light control film master. Schematic illustration of the use of light to control the position of the seam of the film master, which can cause cracking when manufacturing a light film. [Illustration of drawing number (conventional hard wafer 90 seam 9 2 unusable part 9 4 (part of the present invention) glass substrate 10 etching part 1 1 1 photoresist layer 1 2 unexposed part 1 2 2 conductive layer 1 4 Photomask 2 Developer 3 Metal #etching liquid 4 Nickel plate 9 1 Optical structure 9 3 First metal layer 1 1 Most reserved part 1 Exposed part 1 2 1 Second metal layer 1 3 Hole 2 1 2
iiiii 第13頁 1238897iiiii p. 13 1238897
第14頁Page 14
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