TWI233248B - Method of making micro crystal optical fiber laser and frequency multiplier crystal optical fiber - Google Patents
Method of making micro crystal optical fiber laser and frequency multiplier crystal optical fiber Download PDFInfo
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- TWI233248B TWI233248B TW093119817A TW93119817A TWI233248B TW I233248 B TWI233248 B TW I233248B TW 093119817 A TW093119817 A TW 093119817A TW 93119817 A TW93119817 A TW 93119817A TW I233248 B TWI233248 B TW I233248B
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- 239000013078 crystal Substances 0.000 title claims abstract description 148
- 239000013307 optical fiber Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000013081 microcrystal Substances 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000010287 polarization Effects 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 239000000835 fiber Substances 0.000 claims description 94
- 239000000463 material Substances 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 239000003086 colorant Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 239000012788 optical film Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- 239000002994 raw material Substances 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000007526 fusion splicing Methods 0.000 claims 2
- 238000004093 laser heating Methods 0.000 claims 2
- 229910009372 YVO4 Inorganic materials 0.000 claims 1
- IBXOPEGTOZQGQO-UHFFFAOYSA-N [Li].[Nb] Chemical group [Li].[Nb] IBXOPEGTOZQGQO-UHFFFAOYSA-N 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 claims 1
- 230000004927 fusion Effects 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 2
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- -1 Ion ion Chemical class 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- QWSCWPXFBFCNQP-UHFFFAOYSA-N vanadium yttrium Chemical compound [V].[Y] QWSCWPXFBFCNQP-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2383—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2383—Parallel arrangements
- H01S3/2391—Parallel arrangements emitting at different wavelengths
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
1233248
【^明所屬之技術領域】 特別是關於一 微型晶體光纖 本發明是關於一種微型晶體光纖雷射 可應用於全彩雷射之微型晶體光纖雷射 ^射陣列及倍頻晶體光纖之製造方法。 【先前技術】 性等Ξ ΐ t具有南功率密度高單色性,高指向性及高相干 工點:故普及應用於研發醫'療、通訊、資訊、: j生:射光之雷射元件中,,導體雷射相較於其他 =件’ #氣體雷射、固體雷射等,具有體積小、 』長、價格低廉且適於量產等優點,#利於發展商 品。然而,目前於可見光的三原色(紅、綠、藍)之 有紅光波段之半導體雷射可提供低價之商業化產品,莊 光/綠光波段之半導體雷射則受限於寬能隙半導體"材料|的 價格昂貴、製程困難以及發光效率低等問題,要實際商 '業 化仍需要更進一步的研發與改良。 τ ° 〃 因此,發展出半導體雷射激發固態雷射(di〇de — pumped solid state laser, DPSSL),係以中心波長位於 固態雷射晶體之吸收譜線的半導體雷射作為固態雷^的激 發光源,其激發光通常為南功率之紅外光(波長多為8 〇 〇奈 米或8 8 0奈米),而激發固態雷射所發出的基頻雷射光(波Γ 長約一微米之紅外光)再於共振腔内經過非線性晶體倍 頻,產生所需波長之倍頻雷射光。由此方法所形成之半導 體雷射激發固態雷射的光輸出模態佳、波長涵蓋範圍廣、
第6頁 1233248 五、發明說明(2) 峰值或平均功率大,為十分理相的 發固態雷射中用以作為增益二盥=源,但半導體雷射激 體多為絕緣材料,其導熱性較:屈^頻晶體之固態雷射晶 發的模態下’散熱的問題特別嚴重#差,特別在橫向激 故f 了改善散熱問題常需配合龐大的:響雷射輸出效率, 射晶體生長極為耗時,古 、政熱系統。且固態雷 目前半導體雷射激發固態;射晶體的價格,使得 題。 ^展文限於成本與散熱問 【發明内容】 鑑於習知技術,本發明之 纖雷射及倍頻晶體光纖之製、告 糸,供一種微型晶體光 含增益晶體光纖、倍糖a ^ 法’祕型晶體光纖雷射包 纖(crystal fiber)°取代:二入纖^與半導體雷射,以晶體光 雷射晶體材料,同時晶體;二貝二^ 熱問題。 取的阿比表面積可避免產生散 微型晶體光纖雷射係包含 纖與倍頻晶體光纖。半導體雷㈣、增益晶體光 體光纖係係接收激發= = = =發光;增益晶 具有極化反轉週期,係趣人2頻7^,以及倍頻晶體光纖 頻成所需波長之倍頻光。:t :以將基頻光倍 端錢上光學薄膜形成光纖雷射,】纖可經由於兩 二:f , !頻光纖雷射。本發明除可應用於單色 曰辦\:)之光纖晶體雷射,更可將紅、綠、藍三色 曰曰體光纖雷射組合為陣列,“將其應用為全彩模式:達
第7頁 1233248 五、發明說明(3) 成全彩雷射的開發。 本發明更包含一種彳立相曰μ ϊ ^ . e - ^ 禋彳"^ θ曰體光纖之製造方法,係用以 M t ϋ#功之彳口頻日日體光纖。而生長晶體光纖 的方法有許多種,其中,φ , 田射加熱提拉法(laserheated pedestal growth method 丨μργμ 丁 / χ 煸1 >留曰a a Ε⑽,UPG)不但可輕易生長出直徑 極小之單晶’且生長速度体 At旦 ^ ^ 3, Pa Θ1 * & n 夹此置消耗低、控制容易且無 :木之問碭。本發明的倍頻晶體 射加熱提拉法來形成一晶f_甘& 係宙 柱(fee “。d)’以作為=的=驟包含:提供種晶 拉伸此種晶柱,以抽細種端並往固定方向 及提供-對電極於晶體光纖的兩側:;n,以 電場週期持續換極,並配合拉伸 ,電極係根據外加 換極週期,使得晶體光纖形成極化 2 選擇適當的材料進行包覆以降低傳輸損耗j另外,可再 磨、抛士與鑛膜等後處理以形成所需之晶體光並加以研 先則技術之半導體雷射激發固態雷射自 態雷射晶體之截面積大約為丨0平方厘 ^ 斤使用的固 用時’固態雷射晶體受激發面積卻僅^m’但實際使 。本發明將固態雷射晶體製成直微米 光纖,所使用的固態雷射晶體材料可大旦、碱米的晶體 體光纖相較於習知技術的雷射晶體其内二埶ζ、°同時,晶 量縮短,故散熱效率提高。 …、寻導路徑亦大 為使對本發明的目的、構造特徵 丹功旎有進一步的
第8頁 1233248
了解’兹配合圖示詳細說明如下: 【實施方式】 本發明的微型晶體光纖雷射可製作出紅、綠、藍三原 色之雷射’並將其組合成陣列應用於全彩雷射的開發,請 =f第1圖’其為本發明實施例之微型晶體光纖雷射陣列 不意圖。其包含有半導體雷射陣列丨丨〇、三個增益晶體光 、截1 2 1、與二個倍頻晶體光纖1 3 〇。半導體雷射陣列11 〇係由 二個半導體雷射111所組成,以提供激發光;增益晶體光 纖121與,個倍頻晶體光纖13〇係對準耦合,並安裝於1固定 座12 〇,每^一增益晶體光纖1 2 1係用以接收激發光而產生基 頻光’而每一倍頻晶體光纖1 3 〇皆具有極化反轉週期,倍 頻晶體光纖130係耦合於增益晶體光纖121,不同的極化\ 轉週期可將各基頻光分別倍頻成紅(R)、綠(G)、藍( 原色之倍頻光。 一 f全彩雷射的開發上,可使用具有多個主要輻射波長 口心雷射材料來形成增盈晶體光纖,再經過倍頻即可產 生紅、綠、藍三原色的雷射光。用以作為增益介質之固能 雷射材料可分為2個部份··活性離子(active i〇n)與基材u h〇st),活性離子為主要之工作物質,係提供能階 (energy gap)來產生不同之雷射波長;而基材則提供適當 之%離子空位(cat ion-site)以摻雜活性離子。釔鋁石榴 石(yttrlumn aiuminum garne1:,YAG)與釩酸釔 〇rth〇Vanadate,YV〇4),常用來做為雷射增益介質的基 材,而摻雜歛離子作為活性離子之摻歛釔鋁柘榴石
1233248 五、發明說明(5) (N d : Y A G )和摻鈥釩酸釔(N d : Y V 〇4 )都具有三個主要輻射波 長。摻歛釔鋁柘榴石(Nd:YAG)具有946奈米、1064奈米與 1319奈米的輻射波長;摻鈥釩酸釔(Nd:YV〇4)則具有91 4奈 米、1 0 6 4奈米與1 3 4 1奈米的輻射波長;經過倍頻,兩者皆 可產生紅、綠、藍三原色。倍頻晶體光纖的材料可採用鈮 酸鋰或鈕酸鋰,並需於形成倍頻晶體光纖之時使其具有極 化反轉週期。半導體雷射陣列可選擇波長為8 〇 8奈米或轉 換效率更高之8 8 5奈米之半導體雷射。 +赞明係 為形成具有極化反轉週期之倍頻晶體光纖n 以田射加熱提拉法(laser —heated pedestal growth T二d?r古0來成長晶體光纖,此方法不但易於控制晶 曰w日日向人直徑,且生長速度快、能量消耗低、控制容易 ㈡Π。請參考第2圖,其為本發明實施例的倍 ί: 流種:,熱提拉法來形成晶體 弁_ ή6码^ ^么、種晶柱(步驟21 〇),以作為晶體 驟221挾持成炼融區(步 ----場週期持續換極,f配人::,此對電極係根據外加電 極週期C步驟24 0 ),以在口如伸種晶柱的移動速度以形成換 週期。藉由控制外加電尸、/申#出的晶體光纖產生極化反轉 度(Vc)即可決定:° ^ (T)與種晶柱的拉伸移動速 、Μ 1 Λ ),其關係式如下:
2 {niM' — 折、其中,i、c、n2w與⑽分別為種晶柱的晶體同調長度及 2射率’ λ為其泵激的波長。將鈮酸鋰或鈕酸鋰所形成的 =頻ί體t纖與前述不同材質之增益晶體光纖結合可產生 :兴ΐ舰藍三原色光,使用摻鈥釔鋁柘榴石(Nd:YAG)作為 ϋ曰曰=光纖,其換極週期可為12· 7微米、6· 8微米與4 7 頻為波早6=米的換極週期可將波長13191米之基頻光倍 1 0 64太^ ^ 之紅光,6. 8微米的換極週期可將波長 # /不未之基頻光倍頻為波長532奈米之紅光,4 7 a乎μ 將波綱奈米之基頻光倍頻為波長=
ί1換二ί用Ϊ斂釩酸蝴:YV〇4)作為增益晶體光 、義”換極週期可為1 3 · 3微米、6 8料半盥d PI 670 5夺米之乂 !長1341奈米之基頻光倍頻為波長 ^ ^ ^ ^ ^ *5382^/ ^ # ^ *1〇64 ^ ^ 可將波長914夺平之\哼:2光’ 4. 1微米的換極週期 另外,可將增益晶體光纖或倍頻 |光 拋光與鍍膜等後處理以招士…+ Μ日日體先纖施以研磨、 纖可經由於兩:需之晶體光纖1益晶體光 頻晶體光纖再加以鍍膜形,或疋結合倍 型晶體光纖雷射之增益晶體光= = = 於微 合,其接合方式可為機械式、 曰:光纖需加以結 而增益晶體光纖與倍頻晶體光纖的折 1233248 五、發明說明(7) (::二TzL其3到模態匹配,亦即,“者的歸-化嘴* C 〇 malized frequency, V)iH^ a 土, 匕頻率 列關係式: J相專,兩者半徑均需符合下 率,=空1為晶盤光纖的折射 本發明之製造=係二為:二先… 源’可產生極高的溫度梯度,;:::::光束做為熱 徑小於十微米之晶體光纖。◎的:至可長 7:、,且使用晶體光纖來作為增益”,可提以 以限5二揭露如上所述'然其並非用 精神和範圍内,當可作:二::::在不脫離本發明之 專利保護範圍須視太 人潤飾,因此本發明之 為準。 員視本說明書所附之申請專利範圍所界定者 第12頁 1233248 圖式簡單說明 第1圖為本發明實施例之微型晶體光纖雷射陣列示意 圖;及 第2圖為本發明實施例的倍頻晶體光纖之製造流程 圖。 【圖式符號說明】 110 111 120 121 130 步驟2 1 0 步驟2 2 0 步驟2 3 0 晶柱 步驟2 4 0 半導體雷射陣列 半導體雷射 、 固定座 增益晶體光纖 倍頻晶體光纖 提供種晶柱 將雷射光束聚焦於種晶柱以形成熔融區 挾持種晶柱的一端並往固定方向拉伸此種 提供一對電極於晶體光纖的兩側,此對電 極係根據外加電場週期持續換極,並配合拉伸種晶柱的移 動速度以形成換極週期
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Claims (1)
1233248 六、申請專利範圍 1. 一種微型 一半 一增 光;及 一倍 頻晶體光 所需波長 2 ·如申請專 該增益晶 3 ·如申請專 該增益晶 學薄膜。 4 ·如申請專 該增益晶 和摻鈥釩 5 ·如申請專 該倍頻晶 族群其中 6 ·如申請專 該半導體 7 ·如申請專 該增益晶 中之一接 8 ·如申請專 晶體光纖雷射,其包含有·· 導體雷射,係用以提供一激發光; 益晶體光纖,係係接收該激發光而產生—基頻 頻晶體光纖’係耦合於該增益晶體光纖, 纖具有一極化反轉週期,以將該基頻光倍頻: 之一倍頻光。 只成 利靶圍第1項所述之微型晶體光纖雷射, 體光纖係兩端艘上光學薄膜。 利範圍第1項所述之微型晶體光纖雷射,其中 體光纖係結合該倍頻晶體光纖再於兩端鍍上光 利範圍第1項所述之微型晶體光纖雷射,其中 體光纖之材料係選自摻歛釔鋁柘榴石(Nd: γag) 酸紀(Nd: YVO4)所組成的族群其中之一。 利範圍第1項所述之微型晶體光纖雷射,其中 體光纖之材料係選自鈮酸鋰和鈕酸鋰所組成的 * 〇 利範圍第1項所述之微型晶體光纖雷射,其中 雷=之波長係為8 08奈米與8 85奈米其中之、一。 利範圍第1項所述之微型晶體光纖雷射,其中 $光纖係以機械式、熔接式和高溫擴散接合其 合方式接合於該倍頻晶體光纖。 利範圍第1項所述之微型晶體光纖雷射,其中
第14頁 1233248 ”'申請專利範圍 1亥增益晶體光纖與該 9·如申請專利範圍第i項;;員+、曰曰體光纖的歸一化頻率相同。 §亥倍頻晶體光纖係、述之微型晶體光纖雷射,其 含: 雷射如熱提拉法來形成,其步驟包 提供一種晶杈, 將一雷射光束录 為該倍頻晶體光纖的原料; 挾持一種晶柱的二二=種晶,以形成一炫融區; 以抽細該種晶桎之二並往固定方向拉伸該種晶桎, 設置-對電極;=以形成該倍頻晶體光纖;及 外加電場週期持續換:1纖:兩側,該對電極係根據 迷度以形成-換;=;配合該種晶柱的-拉伸移動 反轉週期。 功,使該倍頻晶體光纖產生一極化 :專利範圍第9項所述之微型晶體光纖雷射,直中 11 二°週期(Λ )係為該外加電場種;主 拉伸移動速度(Vc)乘積的二分之一。)…亥種曰曰柱的 一種微型晶體光纖雷射陣列,其包含有: 複數個半導體雷射,係用以提供複數個激發光; 、複數個增益晶體光纖,係係接收該激發光而產生 複數個基頻光;及 複數個倍頻晶體光纖,係耦合於該增益晶體光 纖母一该倍頻晶體光纖具有一極化反轉週期,以將 複數個該基頻光倍頻成所需波長之複數個倍頻光。 1 2 ·如申請專利範圍第丨丨項所述之微型晶體光纖雷射陣 列’其中該增益晶體光纖係兩端鍍上光學薄膜。
第15頁 1233248 六、申請專利範圍 1 3 ·如申睛專利範圍第1 1項所述之微型晶體光纖雷射陣 列,其中該增益晶體光纖係結合該倍頻晶體光纖再於 兩端鍵上光學薄膜。 1 4·如申請專利範圍第丨丨項所述之微型晶體光纖雷射陣 歹1J ’其中該增益晶體光纖之材料係選自摻鈥釔鋁柘榴 石(N d : Y A G)和摻歛飢酸纪(N d : Y V 04)所組成的族群其中 之一° 15 ·如申請專利範圍第11項所述之微型晶體光纖雷射陣 歹,J,其中該倍頻晶體光纖之材料係選自鈮酸鋰和鈕酸 鐘所組成的族群其中之/。 16 ·如申請專利範圍第11項所述之微型晶體光纖雷射陣 列,其中該半導體雷射之波長係為808奈米與885奈米 其中之一。 μ 1 7 ·如申請專利範圍第11項所述之微型晶體光纖雷射陣 列,其中該增益晶體光纖係以機械式、熔接式和高溫 擴散接合其中之一接合方式接合於該倍頻晶體光纖。 18.如申請專利範圍第11項所述之微型晶體光纖雷射陣 列’其中該增益晶體光纖與該倍頻晶體光纖的歸一化 頻率相同。 1 9 ·如申請專利範圍第丨1項所述之微型晶體光纖雷射陣 列,其中複數個該倍頻光係包含紅、綠、藍三原色 光。 2 0 ·如申請專利範圍第1 1項所述之微型晶體光纖雷射,其 中該倍頻晶體光纖係以雷射加熱提拉法來形成,其步
1233248 六 申請專利範圍 驟包含·· 以作為該倍頻晶體光纖的原料; 挾持—種晶柱的一端廿允阳〜士人乂 ^融區, 柱,以抽細該種J之t Μ方向拉伸該種晶 纖;及 曰曰柱之该熔融區以形成該倍頻晶體光 栌: f Φ對電極於晶體光纖的兩側,該對f*朽& 根據外加電場週期持續換極 T電極係 伸移動速度以形成—換極週期ϋ =曰曰柱的-拉 生一極化反轉週期。 使忒么頻晶體光纖產 21·如申請專利範圍第20項 中該換極週期(Λ)係為該外力U;曰f光纖雷射,其 的拉伸移動速度(Vc)乘積二與該種晶枉 22.7種倍頻晶體光纖之製造方法T2二雷 來形成一倍頻晶體光纖,其步驟包人雷射加熱提拉法 提供一種晶柱,以作為 將-雷射光束聚焦於該種纖的原料; 挾持一種晶柱的一端並往固 1成—熔融區; 柱,以抽細該種晶柱之該炫 σ拉伸該種晶 纖;及 4融區以形成該倍頻晶體光 設置一對電極於該倍頻晶體光喻^ 極係根據外加電場週期持續換先纖的兩側,該對電 ^伸移動速度以形成-:極i期並:=該種晶柱的 、哉產生一極化反轉週期。 ^ 使该倍頻晶體光 1233248 六、申請專利範圍 2 3.如申請專利範圍第2 2項所述之倍頻晶體光纖之製造方 法,其中該換極週期(Λ )係為該外加電場週期(T)與該 種晶柱的拉伸移動速度(V c )乘積的二分之一。 2 4.如申請專利範圍第2 2項所述之倍頻晶體光纖之製造方 法,其中該晶體光纖之材料係選自鈮酸鋰和鈕酸鋰所 組成的族群其中之一。
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