TWI232699B - Field emission display device with protection structure - Google Patents

Field emission display device with protection structure Download PDF

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Publication number
TWI232699B
TWI232699B TW93103080A TW93103080A TWI232699B TW I232699 B TWI232699 B TW I232699B TW 93103080 A TW93103080 A TW 93103080A TW 93103080 A TW93103080 A TW 93103080A TW I232699 B TWI232699 B TW I232699B
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Taiwan
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field emission
scope
cathode
patent application
emission display
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TW93103080A
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TW200527936A (en
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Huai-Yuan Tseng
Chun-Yao Huang
Yu-Wu Wang
Yung-Hui Yeh
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Ind Tech Res Inst
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Abstract

A novel protection structure for protecting field emission elements in a field emission display device from burnout damage due to electrical current surges induced to the device cathode by ionized gases in the device. The protection structure includes one or multiple reduction plates or electrodes which are typically provided on the cathode. The reduction plate or plates are negatively-charged and attract positively charged gas ions. Consequently, induction of electrical current surges to the cathode is avoided, thereby preventing burnout damage to the field emission elements.

Description

1232699 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關於一種場發射顯示平板或裝置,尤指一 種場發射顯示器,至少包含一還原板或是電極,可以使激 發出的離子氣體偏移而遠離本發明裝置之場發射組成,以 避免場發射組成元件的傷害。 【先前技術】 近幾年來,平板顯示器已經發展並應用在電子裝置如 私人電腦上。其中一種最熱門應用的平板顯示器為主動式 矩陣(a c t i v e ma t r i X)液晶顯示器,其提供了更好的解 析度。然而,液晶顯示器有很多潛在的限制使其在很多應 用中變得不適用。舉例來說,液晶顯示器有許多製程上的 限制,包含了塗佈非晶矽在玻璃平板上之慢速沈積製程、 高製造複雜度及低產率。此外,液晶顯示器需要一耗損高 度動力之螢光背光源且大部分產生之光源皆為浪費。一般 液晶顯示器在明亮光線情況下或是在大的視角下皆不容易 看到,此點更加限制了液晶顯示器在許多地方之應用性。 其它的平板顯示器在這幾年已快速發展用以取代液晶 顯示平板。其中一種即為場發射顯示器,其克服了 一些液 晶顯示器之限制及提供了一顯著的傳統液晶顯示器所沒有 的優點。舉例來說’與常見的薄膜電晶體液晶顯不平板相 比,場發射顯示器有較高的對比值(c ο n t r a s t r a t i 〇)、 較大的視角、較高的最大亮度、低功率消耗、及一較廣的 溫度操作範圍。 一場發射顯示器及液晶顯示器間最極端的差異為,不1232699 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a field emission display panel or device, especially a field emission display, which includes at least a reduction plate or an electrode, which can excite ions The gas is shifted away from the field emission component of the device of the present invention to avoid damage to the field emission component. [Previous Technology] In recent years, flat panel displays have been developed and applied to electronic devices such as personal computers. One of the most popular flat panel displays is the active matrix (ac t i v e matr x X) liquid crystal display, which provides better resolution. However, liquid crystal displays have many potential limitations that make them unsuitable for many applications. For example, liquid crystal displays have many process limitations, including a slow deposition process for coating amorphous silicon on glass plates, high manufacturing complexity, and low yield. In addition, liquid crystal displays require a fluorescent backlight that consumes a high amount of power, and most of the generated light is wasted. Generally, the liquid crystal display is not easy to see under bright light or at a large viewing angle, which further limits the applicability of the liquid crystal display in many places. Other flat panel displays have been rapidly developed in recent years to replace liquid crystal display panels. One of them is a field emission display, which overcomes the limitations of some liquid crystal displays and provides a significant advantage that traditional liquid crystal displays do not have. For example, 'compared with common thin film transistor liquid crystal display panels, field emission displays have higher contrast values (c ο ntrastrati 〇), larger viewing angles, higher maximum brightness, low power consumption, and a Wide temperature operating range. The most extreme difference between a field emission display and an LCD display is that

1232699 五、發明說明(3) 在早期的場發射陰極發展,常使用鉬所做的金屬微尖 端電子放射體。在此類裝置中,一矽晶片首先被氧化以形 成厚的氧化矽層,然後一拿屬閘極層接著被沈積在氧化矽 層面。此金屬閘極層接著被圖案化以形成一閘極開口 ,接 下來,再蝕刻開口下方氧化矽以形成井(we 1 1)。一犧牲 材料層例如鎳,接著沈積以防止鎳沈澱入電子放射體之壁 中。然後铜以一垂直角度沈積在腔(c a v i t y)内,形成一 具有尖端的圓錐體至該開口。當犧牲鎳被移除,一圓錐狀 的金屬放射體便形成。 在另外一種型式的設計中,矽微尖端電子放射體之製 造係先進行一矽的熱氧化,然後藉由圖案化該氧化層及選 擇性的#刻以形成石夕尖端(s i 1 i c οn t i p)。更進一步的 氧化或是蝕刻保護矽並且使尖端變的更尖銳以提供一犧牲 層。在另外一種可替代的設計中,微尖端被製造在一預定 的材料比如說玻璃基板上,玻璃基板為完美的基板可作為 大平面面積之平板顯示器的基板。微尖端可以藉導電材 料,比如說金屬或是摻雜導電性雜質之半導體材料。在這 個場發射顯示器的可替代設計中,利用控制導電性沈積法 沈積一中間層於陰極與微尖端之間是需要的。一適當中間 層阻抗值可以使顯示器操作在一穩定的情況。在製造此類 場發射顯示器過程中,當然也希望沈積非晶矽膜層,其電 傳導性介於本質的非晶矽及η型摻雜之非晶矽層間的範 圍。Ν型摻雜之非晶矽層的電傳導性可以藉由調控薄膜内 鱗原子的量來控制。1232699 V. Description of the invention (3) In the early development of field emission cathodes, metal microtip electron emitters made of molybdenum were often used. In such devices, a silicon wafer is first oxidized to form a thick silicon oxide layer, and then a gate electrode layer is then deposited on the silicon oxide layer. This metal gate layer is then patterned to form a gate opening. Next, the silicon oxide under the opening is etched to form a well (we 1 1). A layer of sacrificial material, such as nickel, is then deposited to prevent nickel from precipitating into the walls of the electron emitter. Copper is then deposited in the cavity (cavy) at a vertical angle to form a cone with a tip to the opening. When sacrificial nickel is removed, a conical metal radiator is formed. In another type of design, the manufacturing of silicon micro-tip electronic emitters is first performed by thermal oxidation of silicon, and then patterning the oxide layer and selective #etching to form a lithography tip (si 1 ic οn tip ). Further oxidation or etching protects the silicon and sharpens the tip to provide a sacrificial layer. In another alternative design, the microtip is fabricated on a predetermined material, such as a glass substrate. A glass substrate is a perfect substrate and can be used as a substrate for a large flat area flat panel display. Microtips can borrow conductive materials, such as metals or semiconductor materials doped with conductive impurities. In this alternative design of a field emission display, it is necessary to deposit an intermediate layer between the cathode and the microtip using a controlled conductivity deposition method. An appropriate intermediate layer impedance value allows the display to operate in a stable condition. During the manufacture of such field emission displays, it is of course also desirable to deposit an amorphous silicon film layer whose electrical conductivity is in the range between the intrinsic amorphous silicon and the n-type doped amorphous silicon layer. The electrical conductivity of the N-type doped amorphous silicon layer can be controlled by regulating the amount of scale atoms in the film.

第10頁 1232699 五、發明說明(4) 含:般而言,在製造場發射顯示器的製程中,該裝置包 ^ 具有非常低壓力的空腔,因此電子的激發不會被阻 的 舉例來說,一低至1 〇s7 tor r的壓力一般而言是需要 兩^ : !止場發射裝置““目當大的平板互相碰撞, 適冬 ,之間必須有一間隙層(spacer)去支撐並提供一 f田間隙於兩平板間。舉例來說,在常見的場發射顯示器 用 f璃球(glass sphere)或玻璃網格(cross)已被使 Λ維持場發射顯示器中此類間隔。一些細長的間隙層也 被使:來作為此類用途。 清參考圖1Α,圖Α為一放大的常見場發射顯示器10之 截面圖 。士旦π i θ 每發射顯示器1 0藉由沈積一電阻層1 2如典型的非 =矽,f膜於一玻璃基板1 4上而形成。接著由介電材質形 個:ί層1 6及一金屬閘極層1 8依序沈積以共同提供複數 一:电彳"大端2 0,陰極結構2 2由一電阻層1 2所覆蓋,位於 的:::?絕緣層1 6下之具電阻性質且有-點導電性質 的u?電阻係數是非常重㈣,它並不需要是-過大 在短路匕=的電阻來防止當微尖魏金屬層18 包含?參ί圖1B’係顯示了一完整的場發射顯示結構3〇, 匕3 了一陽極28突出於結構3〇之頂部。 了簡單化’圖中之陰極層22及電組層i 2僅二^ = 2托 :電^數個微尖端2。以自微尖端2〇之尖端頂部;多、 個電子26 。當陽極28被供給一較高之正電壓時,閘極18Page 10 1232699 V. Description of the invention (4) Contains: In general, in the manufacturing process of the field emission display, the device includes a cavity with a very low pressure, so the excitation of the electrons will not be blocked. A pressure as low as 10 s7 tor r generally requires two ^:! Stop field emission device "" when the large flat plates collide with each other, in winter, there must be a gap between them to support and provide There is a gap between the two plates. For example, f glass spheres or glass crosses in common field emission displays have been used to maintain such spacing in field emission displays. Some slender interlayers have also been used: for this purpose. 1A, FIG. A is an enlarged cross-sectional view of a conventional field emission display 10. Stan π i θ is 10 per emission display by depositing a resistive layer 12 such as a typical non-silicon, f film on a glass substrate 14. Next, a dielectric material is formed: a layer 16 and a metal gate layer 18 are sequentially deposited to provide a plurality of one: an electric capacitor " big end 20, and a cathode structure 2 2 by a resistive layer 12 Cover, located at :::? The u? Resistivity of the insulating layer 16 which has a resistive property and a -point conductive property is very heavy. It does not need to be-too large. The resistance in the short circuit to prevent when the micro-tip metal layer 18 contains? Referring to FIG. 1B ′, a complete field emission display structure 30 is shown, and an anode 28 protrudes from the top of the structure 30. To simplify the diagram, the cathode layer 22 and the electric group layer i 2 are only two ^ = 2 Torr: a plurality of microtips 2 are electrically charged. Take the top of the tip from the microtip 20; more than 26 electrons. When the anode 28 is supplied with a higher positive voltage, the gate 18

第11頁 1232699Page 11 1232699

4〇° ^發射顯示器4〇包含了 一陰極a,及一陽極46與陰極 42間隔一距離。複數個場發射元件44電性接觸於陰極42, :j激發多個電子52至陽譬46。一電壓供應源48,用以提 供:電位差’以建立一電場5 0於陰極4 2及陽極4 6間。The 40 ° emission display 40 includes a cathode a, and an anode 46 is separated from the cathode 42 by a distance. The plurality of field emission elements 44 are in electrical contact with the cathode 42, and: j excites multiple electrons 52 to 46, for example 46. A voltage supply source 48 is used to provide: a potential difference 'to establish an electric field 50 between the cathode 42 and the anode 46.

在場發射顯示器40的操作過程中,氧氣及氮氣是典型存在 於陰極4 2及陽極4 6間的低壓環境之氣體。當場發射顯示器 4g〇被供給電量,電壓供應源48提供一電位差,則陰極42及 陽極^間會形成一電場5 〇。高能電子4 5被由場發射元件4 4 $激發至,極46。這些高能電子45碰撞氮氣及氧氣並形成 τ正電的氮氣離子及氧氣離子,如圖2β所示。這些帶正電 的氮器離子及氧氣離子會放電至陰極42,並引起一電流突 波(s u r ge)至陰極4 2及場發射元件4 4。這些放大的電流 谷易燒壞場發射元件4 4。因此,一保護的裝置是必要的, 此保護裝置用以偏移上述帶電氣體之放電路徑以遠離陰 極’以避免電流的突波造成裝置中場發射元件的燒毀。 本發明之目的在於提供一新穎的保護結構,以避免場 發射顯示器中場發射元件的燒毁。During the operation of the field emission display 40, oxygen and nitrogen are gases typically present in a low-pressure environment between the cathode 42 and the anode 46. When the field emission display 4g0 is supplied with electric power and the voltage supply source 48 provides a potential difference, an electric field 50 will be formed between the cathode 42 and the anode ^. The high-energy electron 45 is excited to the pole 46 by the field emission element 4 4 $. These high-energy electrons 45 collide with nitrogen and oxygen and form τ positively charged nitrogen ions and oxygen ions, as shown in FIG. 2β. These positively charged nitrogen ions and oxygen ions are discharged to the cathode 42 and cause a current surge (surge) to the cathode 42 and the field emission element 44. These amplified current valleys can easily burn out the field emission elements 4 4. Therefore, a protection device is necessary. This protection device is used to offset the discharge path of the above-mentioned charged gas to keep away from the cathode 'to avoid the burst of the field emission element in the device caused by the surge of the current. An object of the present invention is to provide a novel protection structure to avoid burning of field emission elements in a field emission display.

本發明之另一目的,係提供一新穎的,具有一保護結 構之場發射顯示器,該保護結構至少具有一還原板 (reduction plate)或是電極用以改變帶電氣體之放電 路徑(discharge Path),來避免這些帶電氣體所引發之 電流燒毀了裝置中之場發射元件。 本發明之另一目的,在於提供一新穎的,具有一保護 結構之場發射顯示器,該保護結構包含複數個還原板或是 第14頁 1232699Another object of the present invention is to provide a novel field emission display with a protective structure. The protective structure has at least a reduction plate or an electrode for changing the discharge path of a charged gas. This is to prevent the electric current caused by these charged gases from burning up the field emission elements in the device. Another object of the present invention is to provide a novel field emission display having a protective structure, the protective structure including a plurality of reduction plates or page 14 1232699

五、發明說明(8) 複數個電極散 體之放電路徑 所引發之電流 本發明更 器,其包含了 置中場發射元 置於陰極之場發射元件間,用以改變帶 (discharge path),來避免這些册=々氣 燒毁了裝置f之場發射元件。~ ▼電氣體 進一步之目G在於提供一新穎的場發 保遵結構,該保護結構大大的 ”、、示 件之使用期限。 的加長型了裝 1232699 五、發明說明(9) 在本發明之一 散置於裝置中之場 原板或電極加長且 間。在另一具體實 狀結構或是類似網 【實施方式】 本發明係有關 係包含有一可偏移 §亥結構防止了被吸 件之燒毀,因此, 請參考圖3,围 置5 4之架構圖。場 連接於複數個場發 一類可放電以激發 6 0與陰極5 6及場發 可以是任何導電性 5 6及陽極6 0以在二 本發明之場發 包含一還原板或電: 好是不易形成金屬 一電性絕緣材料,; 源7 4電性連接於還 進一步地敘述說明 具體實施例中,複數個還原板或是電極 發射元件間。在一實施例中,複數個還 平行的奂於裝置中相鄰兩場玫射元件 施例中,複數個還原板或電極排列以網 狀結構於裝置中之場發射元件間。 於一種場發射顯示器,該場發射顯示器 氣體離子放電路徑以遠離陰極的結構。 引至陰極之電流突波所造成的場發射元 大大的延長了該裝置之使用期限。 j 3顯示了本發明之一實施例之場發射裝 發射裝置5 4包含了 一陰極5 6,用以電性 射元件58。每一場發射元件58,可為任 高能電子的尖端,如奈米碳管。一陽極 射元件5 8間隔一距離。陰極5 6及陽極6 0 金屬。一電壓操作源6 2電性連接於陰極 者間建立一電場6 4。 射裝置54中亦包含一保護結構68,至少 7 0典型的位於陰極5 6上。還原板7 〇最 化物之導電金屬。一絕緣層7 2,係為 還原板7 0與陰極5 6分開。一偏壓電 立 板7 〇,用以提供一負電壓,以下將更 1232699 五、發明說明α〇) 在场發射顯示器5 4之操作過程中,操作電壓源6 2提供 陰極5 6對陽極6 0間一電位差,以建立電場6 4。同樣地,該 偏壓源74提供還原板70— I偏壓電位。高能電子66自場發 射元件58中激發出來且撞擊在陽極6〇上之螢光粉標的(未 圖示)以激發出光來。這些高能電子6 6,在通過場發射元 件至陽極66的過程中,撞擊了裝置54内氮氣分子及氧氣分 子撞出電子而因此形成Ν+及〇難子。V. Description of the invention (8) The current caused by the discharge path of a plurality of electrode dispersions. The present invention includes a centered field emission element placed between the field emission elements of the cathode to change the discharge path. Avoid these books = radon burns out the field emission elements of device f. ~ ▼ The further purpose of electric gas G is to provide a novel field guarantee compliance structure, which protects the structure greatly, ", and the life of the parts. The extended type 1232699 V. Description of the invention (9) In the invention A field plate or electrode interspersed in the device is lengthened and spaced. In another specific solid structure or similar net [Embodiment] The present invention is related to include a shiftable structure to prevent burned parts from being burned. Therefore, please refer to Fig. 3, the structure diagram surrounding 54. The field is connected to a plurality of fields and a type of discharge can be used to excite 60 and cathode 56 and the field emission can be any conductivity 56 and anode 60 to 2. The field emission of the present invention includes a reduction plate or electricity: Fortunately, it is not easy to form a metal-electrically insulating material; the source 704 is electrically connected to a further embodiment. In the specific embodiment, a plurality of reduction plates or electrodes are emitted. Between the components. In one embodiment, in the embodiment of a plurality of parallel emitting elements in the device, the reduction plates or electrodes are arranged in a mesh structure between the field emitting components in the device. One Field emission display, the structure of the field emission display gas ion discharge path away from the cathode structure. The field emission element caused by the current surge induced to the cathode greatly extends the life of the device. J 3 shows an implementation of the invention For example, the field emission device 5 4 includes a cathode 56 for electrically emitting elements 58. Each field emitting element 58 can be the tip of any high-energy electron, such as a carbon nanotube. An anode emitting element 5 8 Separate a distance. The cathode 56 and the anode 60 metal. A voltage operating source 62 is electrically connected to the cathode to establish an electric field 64. The radiation device 54 also includes a protective structure 68. At least 70 is typically located at the cathode. 5 6 on. The reduction plate 70 is the most conductive metal. An insulating layer 72 is the separation plate 70 and the cathode 56. A biased electric riser 70 is used to provide a negative voltage. Further 1232699 V. Description of the invention α〇) During the operation of the field emission display 54, the operating voltage source 62 provides a potential difference between the cathode 56 and the anode 60 to establish an electric field 64. Similarly, the bias source 74 Provide reduction plate 70—I Piezoelectric potential. High-energy electrons 66 are excited from the field-emitting element 58 and hit a fluorescent powder target (not shown) on the anode 60 to excite light. These high-energy electrons 66 pass through the field-emitting element to the anode. During the process of 66, the nitrogen molecules and oxygen molecules in the device 54 hit the electrons, thereby forming N + and 〇 dion.

一由於偏壓源7 4提供還原板7 0負電性,上述之Ν +及〇離 子會在放電路徑7 6中自陰極5 6偏移至還原板7 〇。因此,避 免了 Ν +及〇離子接觸到陰極5 6,也因此防止了往陰極之電 流之離子誘導突波(surge),其可能會易於燒毀場發射 =,58。、在還原板7〇上,N+及〇離子被還原回分子氮氣及 氧氣形式,如下式所述: N 2+ + e 一 N 2 〇 2+ + e ~ 〇 2 々^ ΐ來睛參考圖4,圖4係為本發明之另一具體實施例 f琢^ =顯示器80架構圖,該裝置80至少包含一陰極板 85電= 板81相距-距離…操作電壓源 、,:上述之陰極板81及陽極板84。複數個長型As the bias source 74 provides the negative electricity of the reduction plate 70, the above-mentioned N + and 〇 ions will be shifted from the cathode 56 to the reduction plate 70 in the discharge path 76. Therefore, it is avoided that the N + and 0 ions come into contact with the cathode 56, and thus the ion-induced surge of the current to the cathode is prevented, which may be easily burned field emission =, 58. On the reduction plate 70, N + and 〇 ions are reduced back to molecular nitrogen and oxygen form, as described in the following formula: N 2+ + e-N 2 〇2 + + e ~ 〇2 Fig. 4 is another specific embodiment of the present invention. ^ = Display 80 architecture diagram, the device 80 includes at least a cathode plate 85 electrical = plate 81 distance-distance ... operating voltage source, the above-mentioned cathode plate 81 And anode plate 84. Plural long

2。ΐ =行巧條狀陰極(Cath〇d Str ip) 82位於陰極板81 極上發射元件8 3間隔地形成於上述之每一條狀陰 子之可I t射元件83可以是任一適合用以激發高能i ^ 、 大立而’例如奈米碳管(carbon nano tube) 〇 琢$射顯示器80具有一保護結構87,該結構至少包含2. ΐ = Cathod strip cathode 82 is located on the cathode plate 81. The emission elements 8 are formed at intervals on each of the strip-shaped cathodes described above. It may be any suitable radiation element 83. High-energy, high-resolution, e.g., carbon nano tubes. The radio-emitting display 80 has a protective structure 87, which includes at least

第17頁 1232699Page 12 1232699

五、發明說明(11) 複數個長型的還原板或電極8 9形成於陰極板8 1上。還原板 8 9平行且相鄰於每一上述提供複數個場發射元件8 3之條狀 陰極(82)。一 偏壓源(pias voltage source) 90電性 連接於每一保護結構8 7上之還原板8 9,以提供一負偏壓電 位給還原板8 9。因此’如同上述圖3中所述之保護結構 6 8,由偏壓源9 0所提供之負偏壓電位給予還原板8 9一負電 位,該負電位可吸引帶正電之氮離子及氧離子,而避免了 因電流誘導而損害了場發射元件8 3。 場發射元件8 3以及還原板8 9可以在陰極板8 1上製作, 藉由一開始使用常見的沈積技術沈積一金屬陰極板8丨於一 基板上(未圖示)。接著使用微影技術 photolithography techniques 義出條狀陰極8 2及還原板8 9於陰極 著依據該第一光罩所定義之圖案, 狀陰極8 2及還原板8 9。一種濕|虫刻 method)可以被用以準確的控制條 小。接下來,一第二光罩(未圖示 定義場發射元件8 3之幾何位置,接 方式來製造出場發射元件8 3。 一 請參考圖5,圖5係為本發明之 示器92架構圖,該裝置92至少包含 長型且互相平行之條狀陰極9 4形成 93與陰極板93相距一距離、及一操 陰極板93及陽極96。複數個場發^ )來製作第一光罩以定 板8 1上之幾何位置。接 餘刻陰極板8 1以形成條 方法(wet etching 狀陰極8 2之方位及大 )形成在陰極板8 1上以 下來藉由化學氣相沈積 另一實施例之場發射顯 一陰極板9 3、複數個加 於陰極板9 3上、一陽極 作電壓源9 7電性連接於 元件9 6形成於每一條狀 1232699 五、發明說明(12) 陰極9 4上’用以朝陽極9 6激發高能電子 一網狀結構或是類似網狀結構的保護結構9 9形成於裝 置中之陰極板9 3上,該保赛結構9 9至少包含複數個平行且 長型的還原板101於陰極板93上。藉由一開始沈積一陰極 板9 3在一基板上(未圖示)。然後一第一光罩(未圖示) 被圖案化在陰極板93上以蝕刻出條狀陰極94。經過移除陰5. Description of the invention (11) A plurality of long reduction plates or electrodes 89 are formed on the cathode plate 81. The reduction plates 89 are parallel and adjacent to each of the stripe cathodes (82) provided with the plurality of field emission elements 83 described above. A bias source (pias voltage source) 90 is electrically connected to the reduction plate 89 on each of the protection structures 87 to provide a negative bias potential to the reduction plate 89. Therefore, as with the protective structure 68 described in FIG. 3 above, the reduction plate 88 is given a negative potential by the negative bias potential provided by the bias source 90, which can attract positively charged nitrogen ions and Oxygen ions, thereby avoiding damage to the field emission element 83 due to current induction. The field emission element 83 and the reduction plate 89 can be fabricated on the cathode plate 81, and a metal cathode plate 8 is deposited on a substrate (not shown) by using a common deposition technique at the beginning. Next, photolithography techniques are used to define the strip cathode 82 and the reduction plate 89, and the cathode is shaped according to the pattern defined by the first photomask, the cathode 82 and the reduction plate 89. A wet method can be used to accurately control the bar size. Next, a second photomask (not shown to define the geometric position of the field emission element 83 is connected to make the field emission element 83. Please refer to FIG. 5. FIG. 5 is a structural diagram of the indicator 92 of the present invention. The device 92 includes at least a long and parallel stripe cathode 9 4 formation 93 and a cathode plate 93 at a distance from each other, and a cathode plate 93 and an anode 96. A plurality of fields are used to make a first photomask to Geometric position on the fixed plate 81. Next, the cathode plate 8 1 is formed on the cathode plate 8 1 under the strip forming method (the orientation of the wet etching cathode 8 2 is large) to form a cathode plate 9 by field emission of another embodiment by chemical vapor deposition. 3. A plurality of anodes are applied to the cathode plate 9 3, and an anode is used as a voltage source 9 7 is electrically connected to the element 9 6 formed in each strip 1232699 5. Description of the invention (12) The cathode 9 4 is used to face the anode 9 6 Excited high-energy electrons, a net-like structure or a protective structure similar to the net-like structure 9 9 is formed on the cathode plate 93 in the device. The guarantee structure 9 9 includes at least a plurality of parallel and long reduction plates 101 on the cathode plate. 93 on. A cathode plate 93 is first deposited on a substrate (not shown). A first photomask (not shown) is then patterned on the cathode plate 93 to etch a strip-shaped cathode 94. After removing Yin

II ί Ϊ I3上之第一光罩後,一絕緣層1 00沈積在陰極板93及 二=極94上。接著,一用以作為還原板i 〇丨之金屬層沈 」絕緣層1 〇 〇上,隨後塗佈負光阻於還原板i 〇丨上,再以 餘3 行微影以定義還原板101之幾何位置,藉由 = 層以形成網狀結構之還原板10丨,該網狀結構 ^稞=出條狀陰極94上表面之接觸窗口,如圖中所示。 之第二^沈積-催化金屬I,再塗佈正光阻後,以相同 窗口 ί之ί (未圖不)進行微影及蝕刻製程以移除該接觸 的方 ,金屬I ’最後場發射元件95以化學氣相沈積 方2成在接觸窗口中之催化金屬層⑴表面上。 緣層10〇Λ /刀開。因此,還原板101及位於其下的絕 99。 形成一網狀或類似網狀的結構型態予保護結構 壓源10 Hif源1 0 3電性連接於保護結構9 9之還原板101。偏 離子= 共:負甘電位予保護結構99,以吸引帶正電之氮 激發,《中氛離子與氧離子係藉由場發射元件95 …子所形成。因此’如同上述圖3中所述之場 1232699 五、發明說明(13) 發射顯示器,避免了離子接觸至條狀陰極9 4而引起了過量 電流突波至條狀陰極9 4及場發射元件9 5。 以上所述係利用較佳實施例詳細說明本發明,而非限 制本發明之範圍,且熟知該類技藝人士皆能明瞭,適當作 些微的改變與調整,仍不失本發明之要義所在,亦不脫離 本發明之精神與範圍。II Ϊ 后 After the first photomask on I3, an insulating layer 100 is deposited on the cathode plate 93 and the second electrode 94. Next, a metal layer used as the reduction plate i 〇 丨 "on the insulating layer 1000, and then a negative photoresist is coated on the reduction plate i 〇 丨, and the remaining 3 lines of lithography are used to define the reduction plate 101. At the geometric position, the layer 10 is used to form a reduction plate 10 of a mesh structure, and the mesh structure ^ 稞 = a contact window on the upper surface of the strip cathode 94, as shown in the figure. The second ^ deposition-catalytic metal I, after coating with a positive photoresist, the lithography and etching process was performed in the same window (not shown) to remove the contact square, metal I 'last field emission element 95 A chemical vapor deposition method was used to form the surface of the catalytic metal layer ⑴ in the contact window. Marginal layer 10〇Λ / knife open. Therefore, the reduction plate 101 and the insulation 99 located below it are reduced. Form a net-like or net-like structural type pre-protection structure. The pressure source 10 Hif source 10 3 is electrically connected to the reduction plate 101 of the protection structure 9 9. Partial ions = total: Negative Gan potential pre-protection structure 99 to attract positively charged nitrogen to excite. "Medium ions and oxygen ions are formed by field emission elements 95 ...". Therefore, 'the field 1232699 as described in FIG. 3 above. 5. Description of the invention (13) The emission display prevents ions from contacting the stripe cathode 9 4 and causes an excessive current surge to the stripe cathode 9 4 and the field emission element 9 5. The above is a detailed description of the present invention by using preferred embodiments, rather than limiting the scope of the present invention, and those skilled in the art will understand that appropriate changes and adjustments can be made without losing the essence of the invention Without departing from the spirit and scope of the invention.

攀 第20頁 1232699 圖式簡單說明 以上對於本發明所介紹的各樣特點及其它關於本發明的附 屬優點皆可由以下更詳細的描述伴隨附屬圖示而有更清楚 的瞭解,其中, ^ 圖1A 係常見之場發射顯示器之陰極及場發射元件結構示 意圖; 圖1B 係常見之場發射顯示器完整截面示意圖; 圖1C 係常見之場發射顯示器完整截面示意圖,途中描述 了裝置中電子撞擊陽極上之導電層過程; 圖2 A 係常見之場發射顯示器架構圖,說明了裝置中氧氣 及氮器被激發自場發射元件中之電子離子化過程; 圖2 B 係為一常見場發射顯示器架構圖,說明了上述圖2 A 裝置中氧氣離子及氮氣離子往陰極之放電路徑; 圖3 係為本發明之場發射顯示器架構圖,說明了帶正電 之氧離子及氮離子往帶負電之還原板或電極移動之過程; 圖4 係為本發明之一具體實施例之場發射顯示器局部架 構透視圖,說明了裝置中加長型且平行位於場發射元件間 的還原板或電極;及 圖5 係為本發明之另一具體實施例之場發射顯示器局部 架構透視圖,說明了裝置中複數個還原板或電極排列以網 狀結構或是類似網狀結構於場發射元件間。 圖號說明 1 0、4 0、5 4、5 8、8 0、9 2場發射顯示器 1 2電阻層Page 20, 1232699 The diagram briefly illustrates the various features described above for the present invention and other subsidiary advantages of the present invention can be more clearly understood with the accompanying illustrations in the following more detailed description, of which ^ Figure 1A It is a schematic diagram of the structure of the cathode and field emission elements of a common field emission display. Figure 1B is a schematic diagram of a complete cross-section of a common field emission display. Figure 1C is a schematic diagram of a complete cross-section of a common field emission display. On the way, it describes the conduction of electrons on the anode on the device. Layer process; Figure 2 A is a common field emission display architecture diagram, illustrating the ionization process of oxygen and nitrogen in the device being excited from the field emission element; Figure 2 B is a common field emission display architecture diagram, illustrating The discharge path of the oxygen ions and nitrogen ions to the cathode in the device of FIG. 2A is described above; FIG. 3 is a structural diagram of a field emission display of the present invention, illustrating the positively charged oxygen ions and nitrogen ions to a negatively charged reduction plate or electrode The process of movement; Figure 4 is a perspective view of a partial architecture of a field emission display according to a specific embodiment of the present invention An elongated reduction plate or electrode located parallel to the field emission elements in the device is illustrated; and FIG. 5 is a perspective view of a partial architecture of a field emission display according to another embodiment of the present invention, illustrating a plurality of reduction plates or electrodes in the device. The electrodes are arranged in a mesh structure or a similar mesh structure between the field emission elements. Description of drawing numbers 1 0, 4 0, 5 4, 5 8, 8 0, 9 2 Field emission display 1 2 Resistor layer

1232699 圖式簡單說明 1 4、3 6玻璃基板 1 6、1 0 0絕緣層 2 0金屬微尖端 2 2、4 2、5 6、8 卜 9 3陰極 26、 52電子 2 8、4 6、6 0、9 6陽極 3 2含碟粒子 3 4氧化銦錫導電層 3 8側壁板 4 4場發射元件 45、6 6高能電子 4 8電壓供應源 50、 64電場 6 8、8 7、9 9保護結構 7 0、8 9還原板或電極 7 4、9 0、1 0 3偏壓源 8 2、9 4條狀陰極 8 1、9 5場發射元件 8 4陽極板 8 5、9 7操作電壓源 101還原板 1 0 2催化金屬層1232699 Brief description of the drawing 1 4, 3 6 glass substrate 1 6, 1 0 0 insulating layer 2 0 metal microtip 2 2, 4 2, 5 6, 8 9 9 cathode 26, 52 electron 2 8, 4 6, 6 0, 9 6 Anode 3 2 Disk-containing particles 3 4 Indium tin oxide conductive layer 3 8 Side wall plate 4 4 Field emission element 45, 6 6 High energy electron 4 8 Voltage supply source 50, 64 Electric field 6 8, 8 7, 9 9 Protection Structure 7 0, 8 9 reduction plate or electrode 7 4, 9 0, 10 3 bias source 8 2, 9 4 strip cathode 8 1, 9 5 field emission element 8 4 anode plate 8 5, 9 7 operating voltage source 101 reduction plate 1 0 2 catalytic metal layer

第22頁Page 22

Claims (1)

1232699 六、申請專利範圍 1 · 一種場發射顯示器,至少包含: 一陰極; 一陽極,與上述之陰極相距一距離; 複數個場發射元件,介於該陽極與該陰極間,用以激發 電子;及 一保護結構,位於該陽極與該陰極間,用以吸引帶正電 離子。 2 ·如申請專利範圍第1項所述之場發射顯示器,其中上述1232699 6. Scope of patent application 1. A field emission display including at least: a cathode; an anode, a distance from the above cathode; a plurality of field emission elements between the anode and the cathode for exciting electrons; And a protection structure located between the anode and the cathode to attract positively charged ions. 2 · The field emission display according to item 1 of the scope of patent application, wherein the above 之保護結構至少包含一還原板及一偏壓源,該偏壓源電性 連接於該至少一還原板,以提供一負電壓予該至少一還原 板0 3 ·如申請專利範圍第2項所述之場發射顯示器,其中上述 之至少一還原板至少包含複數個長型的還原板,且彼此間 平行配置。 4 ·+如申請專利範圍第2項所述之場發射顯示器,其中上述 之複數個場發射元件至少包含複數個奈米碳管。 5·如|申請專利範圍第4項所述之場發射顯示器,其中上述 之至V 還原板至少包含複數個加長型且彼此間平行配置 之還原,板。The protection structure includes at least a reduction plate and a bias source, and the bias source is electrically connected to the at least one reduction plate to provide a negative voltage to the at least one reduction plate. The field emission display described above, wherein the at least one reduction plate includes at least a plurality of long reduction plates and is arranged in parallel with each other. 4 · The field emission display as described in item 2 of the scope of patent application, wherein the plurality of field emission elements described above include at least a plurality of nano carbon tubes. 5. The field emission display as described in item 4 of the scope of patent application, wherein the above-to-V reduction plates include at least a plurality of reduction-type reduction plates arranged in parallel with each other. 1232699 六、申請專利範圍 6 ·如申請專利範圍第3項所述之場發射顯示器,其中上述 之場發射元件配置成多條列狀且與該至少一還原板平行配 置。 1 ·如申請專利範圍第6項所述之場發射顯示器,其中上述 之場發射元件至少包含複數個奈米碳管。 8 ·如申晴專利範圍第1項所述之場發射顯示器,其中上述 之保護結構為網狀結構。 9 ·如申請專利範圍第8項所述之場發射顯示器,其中上述 之保護結構至少包含一具網狀結構之還原板。 1〇·如申請專利範圍第8項所述之場發射顯示器,苴中上 述之複數個場發射元件至少包含複數個奈米碳管/、 ,其中上 11 ·如申請專利範圍第1 0項所述之場發射顯示器 述之保護結構至少包含一具網狀結構之還原板。 1232699 #、申請專利範圍 一保護結構,位於該陰極板上用以吸引帶正電離子。 1 3 ·如申請專利範圍第1 2項所述之場發射顯示器,其中上 述之保達結構至少包含複數個加長型且平行於e亥條狀陰極 之還原板、及一偏壓源,電性連接於該還原板。 14·如申請專利範圍第1 3項所述之場發射顯示器,其中上 述之保護結構定義為一網狀結構。 15·如申請專利範圍第1 2項所述之場發射顯示器,其中上 φ 述之複數個場發射元件至少包含複數個奈米碳管。 16· '一製造製造場發射顯示器之保遠結構之方法’至少包 含下列步驟: 提供一陰極板;及, 製造複數個條狀陰極及至少一還原板於該陰極板上。1232699 6. Scope of patent application 6 · The field emission display according to item 3 of the scope of patent application, wherein the field emission elements are arranged in a plurality of rows and arranged in parallel with the at least one reduction plate. 1. The field emission display according to item 6 of the scope of patent application, wherein the field emission element described above comprises at least a plurality of nano carbon tubes. 8 · The field emission display as described in item 1 of Shen Qing's patent scope, wherein the above protection structure is a mesh structure. 9 · The field emission display as described in item 8 of the scope of patent application, wherein the above protection structure includes at least a reduction plate with a mesh structure. 10. The field emission display as described in item 8 of the scope of the patent application, wherein the plurality of field emission elements described above include at least a plurality of nano carbon tubes /, among which the upper 11 is as described in the tenth scope of the patent application scope. The protection structure described in the field emission display includes at least a reduction plate with a mesh structure. 1232699 # Scope of patent application A protective structure is located on the cathode plate to attract positively charged ions. 1 3 · The field emission display as described in item 12 of the scope of patent application, wherein the above-mentioned Baoda structure includes at least a plurality of elongated reduction plates parallel to the stripe cathode, and a bias source. Connected to the reduction board. 14. The field emission display according to item 13 of the scope of the patent application, wherein the protection structure is defined as a mesh structure. 15. The field emission display according to item 12 of the scope of the patent application, wherein the plurality of field emission elements described in φ above include at least a plurality of nano carbon tubes. 16. · "A method for manufacturing a field-retaining structure of a field emission display" includes at least the following steps: providing a cathode plate; and manufacturing a plurality of strip cathodes and at least one reduction plate on the cathode plate. 17·如申請專利範圍第1 6項所述之方法,其中上述之製造 複數個條狀陰極及至少一還廣板於该陰極板上至少包含在 該陰極板上同時蝕刻該複數個條狀陰極及該至少一還原 板0 18·如申請專利範圍第1 6項所述之方法,其中上述之製造 複數個條狀陰極及至少一還原板形成於該陰極板上,至少17. The method according to item 16 of the scope of patent application, wherein the manufacturing of a plurality of stripe cathodes and at least one plate on the cathode plate include at least the cathode plate and the plurality of stripe cathodes are etched simultaneously. And the at least one reduction plate 0 18 · The method as described in item 16 of the scope of patent application, wherein the plurality of stripe cathodes and at least one reduction plate described above are formed on the cathode plate, at least 1232699 六、申請專利範圍 包含在該陰極板上蝕刻該複數個條狀陰極、提供一絕緣層 在該複數個條狀陰極上及製造至少一還原板於該絕緣層 上。 19.如申請專利範圍第1 8項所述之方法,其中上述之製造 該至少一還原板於該絕緣層上至少包含沈積一金屬層於該 絕緣層上且蝕刻該金屬層以定義該至少一還原板。1232699 6. The scope of patent application includes etching the plurality of strip-shaped cathodes on the cathode plate, providing an insulation layer on the plurality of strip-shaped cathodes, and manufacturing at least one reduction plate on the insulation layer. 19. The method according to item 18 of the scope of patent application, wherein the manufacturing the at least one reduction plate on the insulating layer includes at least depositing a metal layer on the insulating layer and etching the metal layer to define the at least one Restore the plate. 第26頁Page 26
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