TWI230977B - Structure applied in photolithography process and fabricating method of a semiconductor device - Google Patents
Structure applied in photolithography process and fabricating method of a semiconductor device Download PDFInfo
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- TWI230977B TWI230977B TW92136490A TW92136490A TWI230977B TW I230977 B TWI230977 B TW I230977B TW 92136490 A TW92136490 A TW 92136490A TW 92136490 A TW92136490 A TW 92136490A TW I230977 B TWI230977 B TW I230977B
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- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000000206 photolithography Methods 0.000 title claims abstract 4
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims description 42
- 230000000903 blocking effect Effects 0.000 claims description 33
- 238000001459 lithography Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract 10
- 238000002955 isolation Methods 0.000 abstract 5
- 230000003287 optical effect Effects 0.000 abstract 5
- 239000011247 coating layer Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
1230977 五、 發明說明 ：1) 發 明 技 術 頷 域 元 件 本發 明 是 有 關 於 種應用 於微影製程的結構及半導體 的 製 造 方 法 5 且 特 別是有 關於一種改善微影製程之關 鍵 尺 寸 均 勻 度 的 結 構 5 以及應 用此結構的半導體元件的製 造 方 法 〇 先 前 技 術 影 製 在 半 導 體 元 件 的 製 造過程 中’通常需要實行多次的微 程 5 因 此 微 影 製 程 對半導 體元件而言是相當重要的製 程 〇 舉 例 來 說 5 在 積 體 電路的 製程中’微影製程的準碟度 是 決 定 電 路 之 最 大 密 度 以及最 終可罪度的因素之一。此 外 微 影 製 程 對 於 電 晶 體與内 連線之金屬層和插塞的定位 及 其 致 性 亦 是 相 當 重 要。 但 傳 統 微 影 製 程 中 ，常因 光阻無法完全吸收曝光光源 的 入 射 光 5 而 造 成 部 分 之入射 光穿透光阻層並由基底反射 出 反 射 光 0 此 時 9 反 射 光便可 能與入射光產生建設性或破 壞 性 干 涉 而 產 生 駐 波 如此將 使得圖案化的光阻層輪廓不 佳 0 為 了 解 決 上 述 之 問 題，習 知是在光阻層底下（即光阻 層 與 膜 層 之 間）形成- •層抗反射層，用以吸收穿透光阻層 的 曝 光 光 線 ， 以 改 善 上 述之反 射光與入射光之干涉所造成 的 問 題 〇 而 抗 反 射 層 的 材質通 吊疋氮化石夕、氮氧化石夕等介 電 材 料 或 是 其 他 具 有 吸收性 質之有機材料。 然 而 這 些 材 質 之 光吸收 係數並不足夠以吸收大部分 的 入 射 PiUdLSI 光 因 此 仍 有 JkU'ki 部 分的入 射光會穿透抗反射層以及其 η m1230977 V. Description of the invention: 1) Inventive technology of the field element The present invention relates to a structure applied to a lithography process and a method for manufacturing a semiconductor 5 and, in particular, to a structure for improving the uniformity of key dimensions of a lithography process 5 And a manufacturing method of a semiconductor element using this structure. The prior art film manufacturing process of a semiconductor device 'usually requires multiple micro-steps. 5 Therefore, the lithography process is a very important process for semiconductor devices. For example, 5 In the fabrication of integrated circuits, the accuracy of the lithography process is one of the factors that determine the maximum density of the circuit and the ultimate guilt. In addition, the lithography process is also very important for the positioning of the metal layer and plugs of the electrical crystal and the interconnects and their conformance. However, in the traditional lithography process, the photoresist often cannot fully absorb the incident light of the exposure light source 5 and part of the incident light penetrates the photoresist layer and reflects the reflected light from the substrate. 0 At this time, 9 reflected light may be generated with the incident light. The standing wave generated by constructive or destructive interference will make the patterned photoresist layer have a poor profile. In order to solve the above problems, it is known to form under the photoresist layer (that is, between the photoresist layer and the film layer)- • An anti-reflection layer is used to absorb the exposure light penetrating the photoresist layer to improve the problem caused by the interference between the reflected light and the incident light. The material of the anti-reflection layer is suspended from nitride stone and oxynitride. Xi and other dielectric materials or other organic materials with absorption properties. However, the light absorption coefficients of these materials are not sufficient to absorb most of the incident PiUdLSI light, so there is still a JkU'ki part of the incident light that will penetrate the anti-reflection layer and its η m
12398twf.ptd 第8頁 1230977 ^---------— 五、發明說明（2) ' ' 下方的膜層而從基底表面反射，而與入射光產生干涉。而 且’當抗反射層底下之膜層的厚度改變時，光阻圖案的關 鍵尺寸（Critical Dimension，CD)還會跟著變化，而存 在有關鍵尺寸均勻度不一致的問題。 内容 ^ 因此’本發明的目的就是提供一種應用於微影製程的 結構’可完全阻擋曝光之光線，使其無法穿透膜層而到達 基底表面’因此光阻層底下之膜層厚度的變化將不會影響 微影製程之關鍵尺寸。 本發明的另一目的是提供一種半導體元件的製造方 法’其可利用上述之微影製程來製造一半導體元件，以提 高元件的關鍵尺寸均勻度。 本發明提出一種應用於微影製程的結構，此結構包括 一基底’且基底上已形成有至少一膜層。此外，此基底上 還依序配置有光線阻隔層、抗反射層以及光阻層。其中， 光線阻隔層係用以阻擋光線，使光線不會穿透其内部。在 一實施例中，光線阻隔層的光吸收係數大於h 8，以有效 減少微影製程中透射至基底的光線。 本發明還提出一種半導體元件的製造方法，此方法係 先提供一基底，且基底上已依序形成有至少一膜層、光線 阻隔層、抗反射層以及光阻層。接著進行微影製程以圖案 化光阻層，而使部分之抗反射層暴露出來。然後以圖案化 之光阻層作為罩幕，以便於圖案化抗反射層以及光線阻隔 層’並在基底上的膜層中形成開口。12398twf.ptd Page 8 1230977 ^ ------------- V. Description of the invention (2) '' The film layer below reflects from the substrate surface and interferes with incident light. Moreover, when the thickness of the film layer under the anti-reflection layer changes, the critical dimension (CD) of the photoresist pattern will also change, and there is a problem of inconsistency in the uniformity of the key dimensions. Content ^ Therefore, 'the purpose of the present invention is to provide a structure applied to the lithography process' which can completely block the exposed light so that it cannot penetrate the film layer and reach the surface of the substrate'. Therefore, the thickness change of the film layer under the photoresist layer will Does not affect critical dimensions of the lithography process. Another object of the present invention is to provide a method for manufacturing a semiconductor device, which can utilize the above-mentioned lithography process to manufacture a semiconductor device to improve the uniformity of the critical dimensions of the device. The present invention provides a structure applied to a lithography process. The structure includes a substrate 'and at least one film layer has been formed on the substrate. In addition, a light blocking layer, an anti-reflection layer, and a photo blocking layer are sequentially arranged on the substrate. Among them, the light-blocking layer is used to block light so that the light does not penetrate through it. In one embodiment, the light absorption coefficient of the light blocking layer is greater than h 8 to effectively reduce the light transmitted to the substrate during the lithography process. The invention also provides a method for manufacturing a semiconductor device. This method first provides a substrate, and at least one film layer, a light blocking layer, an anti-reflection layer, and a photoresist layer have been sequentially formed on the substrate. Then, a lithography process is performed to pattern the photoresist layer, and a part of the anti-reflection layer is exposed. Then, a patterned photoresist layer is used as a mask to facilitate patterning the antireflection layer and the light blocking layer 'and forming openings in the film layer on the substrate.
12398twf.ptd 第9頁 1230977 五、發明說明（3) 本發明更提出一種半導體元件的製造方法，此方法係 先提供一基底，且基底上已依序形成有至少一膜層、光線 阻隔層、抗反射層以及光阻層。接著進行微影製程以圖案 化光阻層，而使部分之抗反射層暴露出來。然後以圖案化 之光阻層作為罩幕，以圖案化抗反射層以及光線阻隔層。 之後再移除圖案化之光阻層與圖案化之抗反射層。之後以 光線阻隔層為罩幕進行一蝕刻製程，以在膜層中形成開 σ 〇 上述應用於微影製程的結構中，因光阻層之底下係配 置有光線阻隔層，因此曝光之光線就無法穿透光阻層底下 之膜層再由基底表面反射出，換言之，光阻層底下之膜層 厚度的變化將不會影響微影製程之關鍵尺寸。 另外，在後續形成半導體元件的製程中，因微影製程 之關鍵尺寸之均勻度已獲得控制，因此可以使得元件之關 鍵尺寸之均勻度獲得改善。而且，上述結構之光線阻隔層 還用來作為蝕刻終止層或是研磨終止層之用。 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉一較佳實施例，並配合所附圖式，作 說明如下。 實施方式 以下將以金層内連線之接觸窗的製程為例來說明本發 明之微影製程，以及應用於此微影製程的結構，以及利用 此結構來形成接觸窗的製造過程。 第1 Α圖至第1Ε圖係繪示本發明之一較佳實施例的一種12398twf.ptd Page 9 1230977 V. Description of the invention (3) The present invention further provides a method for manufacturing a semiconductor device. This method first provides a substrate, and at least one film layer, a light blocking layer, Anti-reflection layer and photoresist layer. Then, a lithography process is performed to pattern the photoresist layer, and a part of the anti-reflection layer is exposed. Then, a patterned photoresist layer is used as a mask to pattern the antireflection layer and the light blocking layer. After that, the patterned photoresist layer and the patterned antireflection layer are removed. Then, an etching process is performed using the light blocking layer as a mask to form an opening σ in the film layer. In the above-mentioned structure applied to the lithography process, because the light blocking layer is arranged under the photo blocking layer, the light of the exposure will be reduced. The film layer that cannot penetrate the photoresist layer is then reflected from the substrate surface. In other words, changes in the thickness of the film layer under the photoresist layer will not affect the critical dimensions of the lithography process. In addition, in the subsequent process of forming a semiconductor device, the uniformity of the key dimensions of the lithography process has been controlled, so that the uniformity of the key dimensions of the device can be improved. In addition, the light blocking layer of the above structure is also used as an etching stop layer or a polishing stop layer. * In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below, and described in conjunction with the accompanying drawings. Embodiments The following will describe the lithography process of the present invention, the structure applied to the lithography process, and the manufacturing process of using this structure to form the contact window, taking the process of the contact window of the gold layer interconnect as an example. Figures 1A to 1E show a preferred embodiment of the present invention.
五、發明說明（4) 形成金屬内連線之接觸窗的流程剖面圖。請參照第丨A圖， 首先在基底100上依序形成介電層102、光線阻隔'層1〇4、 抗反射層106以及光阻層108。其中，介電層1〇2例如是作 為金屬内連線中的内層介電層，且其與基底1〇〇之間例如 是已形成有多個半導體元件（未繪示）以及其他膜層（未 緣示）。 光線阻隔層104的光吸收係數例如是大於i 8，且其材 質可以是金屬材料或是其他導電材料，例如是多晶矽質、 鎮或是紹等。而抗反射層1 〇 6的材質例如是氮化矽或氮氧 化梦’或疋其他適合用於抗反射層之有機材料。 请參照第1 B圖，接著進行一微影製程將光阻層丨〇 8圖 案化，以形成圖案化之光阻層108a，而使得部分的抗反射 層1 0 6暴露出來。 特別的是，在此微影製程中，抗反射層丨〇6可吸收在 曝光製程中穿透光阻層108的部分光線，而未能被抗反射 層1 06吸收的光線在到達光線阻隔層丨〇4之後，就會被阻隔 而無法，續往底下穿透。一方面，因光線阻隔層1〇4本身 具有較高的吸收係數，因此可以吸收穿透抗反射層丨〇6的 光線’另一方面，光線阻隔層丨〇4還可以將部分的光線反 射回抗反射層106中，而使光線再次的於抗反射層1〇6被吸 收。因此，光線阻隔層1 〇 4可以使得光線無法穿透至其底 下的介電層102，而再由基底1〇〇表面反射出。因此，光阻 層108底下之介電層1〇2厚度的變化將不會影響微影製程之 關鍵尺寸’因而提升微影製程之關鍵尺寸的均勻度。V. Description of the invention (4) A cross-sectional view of a process for forming a contact window of a metal interconnect. Referring to FIG. 丨 A, firstly, a dielectric layer 102, a light blocking layer 104, an anti-reflection layer 106, and a photoresist layer 108 are sequentially formed on the substrate 100. The dielectric layer 102 is, for example, an inner dielectric layer in a metal interconnect, and a plurality of semiconductor elements (not shown) and other film layers have been formed between the dielectric layer and the substrate 100 ( Not shown). The light absorption coefficient of the light-blocking layer 104 is, for example, greater than i 8, and the material may be a metal material or other conductive materials, such as polycrystalline silicon, silicon, or silicon. The material of the anti-reflection layer 106 is, for example, silicon nitride or nitrogen oxide 'or other organic materials suitable for the anti-reflection layer. Please refer to FIG. 1B, and then perform a lithography process to pattern the photoresist layer 08 to form a patterned photoresist layer 108a, so that a part of the antireflection layer 106 is exposed. In particular, in this lithography process, the anti-reflection layer 〇06 can absorb part of the light that penetrates the photoresist layer 108 during the exposure process, and the light that cannot be absorbed by the anti-reflection layer 106 reaches the light-blocking layer丨 〇4, it will be blocked and unable to continue to penetrate underneath. On the one hand, because the light-blocking layer 104 has a high absorption coefficient, it can absorb light that penetrates the anti-reflection layer 丨 〇6 'On the other hand, the light-blocking layer 〇04 can also reflect part of the light back In the anti-reflection layer 106, light is absorbed again in the anti-reflection layer 106. Therefore, the light-blocking layer 104 can prevent light from penetrating the dielectric layer 102 underneath, and then reflect it from the surface of the substrate 100. Therefore, the change in the thickness of the dielectric layer 102 under the photoresist layer 108 will not affect the critical dimension of the lithographic process', thus improving the uniformity of the critical dimension of the lithographic process.
12398twf.ptd 第11頁 1230977 五、發明說明（5) 在上述之結構中，光線阻隔層丨〇4除了可以阻擋光線 之外，其在後續製程中還可以作為蝕刻終止層及研磨終止 層之用，詳細說明如下。 請參照第1 C圖，用圖案化之光阻層丨08a作為罩幕進行 一蝕刻製程，以形成圖案化之抗反射層丨〇6a以及光線阻隔 層10 4a ’並於介電層1〇2中形成多個接觸窗開口11()。 值知注意的是，雖然在此蝕刻製程中有可能會同時蝕 刻部分厚度的圖案化之光阻層丨〇8a ,甚至是部分厚度的圖 案化之抗反射層106a，更甚者圖案化之光阻層1〇8&及抗反 射層1 06a都會完全被蝕刻掉。但由於本發明所使用的光線 阻隔層104之材質例如是金屬或是多晶矽，因此介電層ι〇2 的蝕刻速率遠大於光線阻隔層丨〇4的蝕刻速率，因此&使 圖案化之光阻層108a與圖案化之抗反射層1〇6a皆被完全蝕 刻掉，圖案化之光線阻隔層丨〇 4a仍能夠作為 介電層m能以完全的被圖案化，而形成接觸/ϋ；；使 凊參照第1D圖，移除圖案化之光阻層1〇83與圖案化 抗反射層106a »其中，若圖案化之抗反射層^以之材 斗，則可在去光阻的製程中同時移除圖案化之抗反 Ϊ ' :二若圖案化之抗反射層1〇6&的材質為無機材 是氮化石夕或是氮氧化石夕等等，則需在去光阻製程 後ί仃一蝕刻製程以將其移除。之後再於圖案化之光绫 :m4a上形成一層材料層112 ’並填滿接觸窗開口 11〇。其+ ’材料層112的材質例如是 導電材料。 3 %寺八他週用之12398twf.ptd Page 11 1230977 V. Description of the invention (5) In the above structure, the light blocking layer 丨 04 can not only block light, but also can be used as an etching stop layer and a polishing stop layer in subsequent processes. As detailed below. Referring to FIG. 1C, an etching process is performed using the patterned photoresist layer 丨 08a as a mask to form a patterned anti-reflective layer 〇6a and a light blocking layer 104a 'and a dielectric layer 102 A plurality of contact window openings 11 () are formed in the center. It is important to note that although it may be possible to etch part of the patterned photoresist layer in this etching process at the same time, even the patterned anti-reflection layer 106a of part thickness, or even patterned light Both the resist layer 108 and the anti-reflection layer 106a are completely etched away. However, since the material of the light-blocking layer 104 used in the present invention is, for example, metal or polycrystalline silicon, the etching rate of the dielectric layer ι2 is much higher than that of the light-blocking layer 〇04, so & the patterned light Both the resist layer 108a and the patterned anti-reflection layer 106a are completely etched away, and the patterned light-blocking layer 04a can still be fully patterned as the dielectric layer m to form a contact / ϋ; Referring to FIG. 1D, the patterned photoresist layer 1083 and the patterned antireflection layer 106a are removed. Among them, if the patterned antireflection layer is used, it can be used in the photoresist removal process. At the same time, the patterned anti-reflective film is removed at the same time: If the material of the patterned anti-reflection layer 106 is inorganic nitride or oxynitride, etc., it needs to be removed after the photoresist removal process. An etching process is performed to remove it. After that, a layer of material 112 'is formed on the patterned light beam m4a and fills the contact window opening 11o. The material of the + 'material layer 112 is, for example, a conductive material. 3% used in Temple Hata Week
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12398twf.ptd12398twf.ptd
第12頁 1230977 五、發明說明（6) :參照第1£圖，進行化學機械研磨製程，以將覆蓋於 光線阻隔層1〇4a上的材料層112移除，直到暴露 =圖J化之光線阻隔層10乜，此時即完成接觸窗114的製 ί隔H的是，在此化學機械研磨製程中，圖案化之光線 阻^層l〇4a可作為一研磨終止層。 =，若接觸窗開口110之尺寸有深寬比過高之問題 二：”微影製程以完成圖案化之光阻層1〇8“吏（如第 形= 可以另一不同於上述實施例之步驟的製程來 開口"0 ’以下將對此方法加以詳細說明。 ㈣以Ϊ i第2B圖係繪示本發明之另—較佳實施例的— 2I圖=連線之接觸窗的部分流程剖面圖。請參照第 著：固ί: 第1B圖所示之圖案化之光阻層l〇8a後，接 成圖案化之抗反射層106a以及圄査仆+ I蚀刻裊程以形 抗反：ί: ，移除圖案化之光阻層1〇8a與圖案化之 幕進行曰姑^後，再以圖案化之光線阻隔層1 04a為罩 \ ^，,1π 戶l〇6a已於蝕入圖案化之光阻層1〇8a與圖案化之抗反射 深寬比:而使得開口 11〇可以順利的形所以叮以減少 而後續於接觸窗開口丨丨〇中填入導 窗的製程即如上一 f#丨辦、+、/ & 4電材枓以形成接觸 說明），此處將不ΓΐΓ 第1D圖至第1E圖之 由上述可知，由於光線阻隔層可以在曝光製程中有效Page 121230977 V. Description of the invention (6): Refer to Figure 1 for a chemical mechanical polishing process to remove the material layer 112 covering the light-blocking layer 104a until it is exposed = the light in Figure J The barrier layer 10a, at this time, the manufacturing of the contact window 114 is completed. In this chemical mechanical polishing process, the patterned light blocking layer 104a can be used as a polishing stop layer. =, If the size of the contact window opening 110 has a problem of too high aspect ratio 2: "lithographic process to complete the patterned photoresist layer 108" (such as the shape = may be another different from the above embodiment) Steps of the process to open the "" 0 This method will be described in detail below. Figure 2B shows another-preferred embodiment of the present invention-Figure 2I = part of the flow of the contact window of the connection Sectional drawing. Please refer to the book: Solid: After the patterned photoresist layer 108a shown in Figure 1B, it is connected to a patterned anti-reflection layer 106a and an inspection process + I etching process to form anti-reflection : Ί: After removing the patterned photoresist layer 108a and the patterned curtain, the patterned light blocking layer 1 04a is used as a mask, and 1π household 106a has been etched. The patterned photoresist layer 108a and the patterned anti-reflection aspect ratio: so that the opening 11 can be smoothly shaped, so the bite is reduced, and the subsequent process of filling the guide window into the opening of the contact window is as follows: As in the previous f # 丨 Do, +, / & 4 electrical materials (to form contact instructions), here will not be known from the above in Figures 1D to 1E. Since the light interception layer may be effective in the exposure process
12398twf.ptd 第13頁 1230977 別注意 窗的製 影製程 明之應 必須使 來改善 發明已 ’任何 當可作 附之申 使光線不會穿透到其底下之臈層 此光阻層底下之膜層厚度的變化 鍵尺寸。而且，上述所使用之光 化學機械研磨製程以及蝕刻製程 的是，雖然 程來詳細說 的結構僅能 用於微影製 用微影製程 其關鍵尺寸 以較佳實施 熟習此技藝 些許之更動 凊專利範圍 例係以金屬内 非限定本發明 程中。本發明 用面加以限 ’皆可使用本 然其並非用以 本發明之精神 本發明之保護 五、發明說明（7) 阻擋光線， 反射出，因 影製程之關 以在後續的 止層之用。 值得特 連線之接觸 之應用於微 並未對本發 定，只要是 發明之結構 雖然本 限定本發明 和範圍内， 範圍當視後 上述之二實施 明本發明，並 用在接觸窗製 程的結構之應 的半導體元件 均勻度。 例揭露如上， 者，在不脫離 與潤飾，因此 所界定者為準 ’而由基底再 將不會影響微 線阻隔層還可 中，作為一終 1230977 圖式簡單說明 第1 A圖至第1 E圖係繪示本發明之一較佳實施例的一種 形成金屬内連線之接觸窗的流程剖面圖。 第2 A圖至第2 B圖係繪示本發明之另一較佳實施例的一 種形成金屬内連線之接觸窗的部分流程剖面圖。 【圖式標示說明】 100 基底 102 介電層 104 光線阻隔層 104a :圖案化之 光 線 阻 隔層 106 ： :抗反射層 106a :圖案化之 抗 反 射 層 108 ： ;光阻層 108a ;圖案化之 光 阻 層 110 開口 112 材料層 114 接觸窗12398twf.ptd Page 13 1230977 Don't pay attention to the window making process. It should be used to improve the invention. 'Anything that can be added so that light does not penetrate into the layer underneath this photoresist layer. Change the thickness of the key size. In addition, the photochemical mechanical polishing process and etching process used above, although the structure detailed in the process can only be used for lithographic process lithographic process, its key dimensions are better to be familiar with this technology. A few changes. Patent The scope examples are not limited to the process of the present invention within the metal. The present invention is limited in its use. It can be used. It is not intended to protect the spirit of the present invention. V. Description of the invention (7) Block light and reflect it. It is used in subsequent stops because of the shadow process. . The application of the contact that is worthy of special connection has not been determined for the present invention. As long as the structure of the invention is within the scope of the invention and the scope, the scope of the invention will be explained after the above two, and it is used in the structure of the contact window process. Corresponding semiconductor element uniformity. The example is disclosed as above. In the case of no separation and retouching, the definition shall prevail, and the substrate will not affect the microwire barrier layer. As a final 1230977 diagram, it will be briefly explained in Figures 1A to 1 FIG. E is a cross-sectional view showing a flow of forming a contact window of a metal interconnection line according to a preferred embodiment of the present invention. Figures 2A to 2B are cross-sectional views showing part of a flow of a contact window for forming a metal interconnect line according to another preferred embodiment of the present invention. [Illustration of Graphical Indication] 100 substrate 102 dielectric layer 104 light blocking layer 104a: patterned light blocking layer 106 :: anti-reflection layer 106a: patterned anti-reflection layer 108 :; photoresist layer 108a; patterned light Resistance layer 110 Opening 112 Material layer 114 Contact window
12398twf.ptd 第15頁12398twf.ptd Page 15
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| TW92136490A TWI230977B (en) | 2003-12-23 | 2003-12-23 | Structure applied in photolithography process and fabricating method of a semiconductor device |
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| TW92136490A TWI230977B (en) | 2003-12-23 | 2003-12-23 | Structure applied in photolithography process and fabricating method of a semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11603263B2 (en) | 2012-03-09 | 2023-03-14 | Simplehuman, Llc | Trash can assembly |
| US11801996B2 (en) | 2014-03-14 | 2023-10-31 | Simplehuman, Llc | Trash can assembly |
| USD1004069S1 (en) | 2020-08-26 | 2023-11-07 | Simplehuman, Llc | Odor pod receptacle |
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2003
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11603263B2 (en) | 2012-03-09 | 2023-03-14 | Simplehuman, Llc | Trash can assembly |
| US11801996B2 (en) | 2014-03-14 | 2023-10-31 | Simplehuman, Llc | Trash can assembly |
| USD1004069S1 (en) | 2020-08-26 | 2023-11-07 | Simplehuman, Llc | Odor pod receptacle |
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| TW200522150A (en) | 2005-07-01 |
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