TWI229951B - LED structure with high light-emitting efficiency - Google Patents

Abstract

The present invention relates to an LED structure with high light-emitting efficiency, in which an LED chip having a transparent substrate is used. The LED chip is connected to a transparent carrier through a highly transparent adhering layer. The transparent carrier is located under the LED, and an opaque package layer is used to package the LED chip and the transparent carrier. The transparent carrier is wholly packaged except the lower portion. At this time, the light from the light-emitting layer of the LED chip will emit through the transparent carrier on the bottom. Furthermore, a reflective layer is disposed on the P-type semiconductor layer of LED, so as to completely reflect the light from the light-emitting layer, and emit the light through the transparent carrier. Thus, the light-emitting efficiency of LED is increased.

Description

1229951 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a kind of high luminous efficiency, especially the packaging of a kind of light-emitting diodes-the polar body, the structure, the beauty of sex In this way, the method of revealing the use of transparent photoacoustic: light 绫 si one: polar body and a grid with a transparent carrier, the first path of the light-emitting layer through the transparent carrier [prior art] i shot out . Conductor = material i ί One pole (Llght Emitting Diode; LED) is half Λ, Μ. It is also a kind of fine solid-state light source, which can make electric snow not only volume, long life, low driving voltage, reaction / plasticizing coins The seven characteristics are excellent, which can match the lightness, thinness and various types of LF ^ i of various application equipments. According to the light emission wavelength, it is roughly divided into visible light and invisible light. LEDs are mainly used for display purposes, and the brightness is 1 ί i in. The demarcation point of high-brightness LED, the former should be widely used for internal display purposes, and the latter is suitable for outdoor display *, such as car si ..., outdoor signs, traffic signs, etc .; invisible light such as infrared LE_ applied to photocopying paper Dimension detection, remote control of household appliances, factory automatic detection, automatic door, automatic flushing device control, etc.

In the process of mass production of LED components, it is usually divided into upper, middle and downstream division of labor. The upstream main products are single wafers and epitaxial wafers. Single wafers are substrates of raw materials. Most of them are binary 丨 丨 丨 -V compound semiconductor materials, such as gallium arsenide (GaAs) or gallium phosphide (GaP). On the single crystal substrate, a plurality of single crystal thin films of multiple materials with different thicknesses have been grown, such as A 1 X

As / GaAs, AlxGayIn, x_yP / GaAs, InxGahN / GaN and other structures, commonly used

1229951 V. Description of the invention (2) The techniques of '' --------------- | include liquid phase epitaxial formation, t / τ · D, η and organometallic vapor phase telephasing phasevEpltaxy (LPE) • ^ (Metal Organic Vapor Phase = x: '_E), etc. According to the requirements of the component structure, the midstream operator first crafts and produces electrodes on tr 2 and then cuts them into fine grains. The grains are cut: etc. $: Yes: photomask, dry or wet etching, vacuum evaporation And 丨: Put into Erguang then belong to the package # 'The die is adhered to the lead frame, then I / amp), digital display (digi t display), point P. 1 U〇t raatrix) or surface adhesion type (surface raount) and so on, please f = the first figure, which is the package of the conventional technology 1:; 30% light emitting diode / Christie-polar wafer 10, an adhesive 20, and a carrier 30, the light emitting diode wafer 10, including a substrate 105, An n-type semiconductor 110 ′, a light-emitting layer 120 ′, and a p-type semiconductor layer 130. Above the i-semiconductor layer 130 ′ is a positive pad 132 metal wire 420 ′ and a first metal support 42. , Connected to the N-type half-two: Ιι 10 ′ above there is a negative pad 112, which is connected to a second metal bracket 44 ′ through a second gold: 440 ′, and then a snoring sound The light-emitting diode wafer 10 ′ is encapsulated with a carrier 30, and the carrier will be a metal bracket or a pc circuit board, both of which are opaque. The light-emitting path is 10 ′, and the light-emitting layer 12 ′ is upward. After passing through the P-type semiconductor layer 130, the disk is an I-layer 50 and emitted. /, Nail clothes, Flip chip package is the technology of packaging the surface of the element die, using the die to meet the needs of the flip chip package, and in [rib crystal 12299951 V, the description of the increase in grains, but, problem. Therefore, the light-emitting diode positive and negative electrodes and the improvement of the diode phase of the present invention are discussed. Good and solvable. (3) The reflector is packaged. How can the pole junction block people ’s thoughts about product ideas? When it comes to the configuration, it is easy to cause not only the shortcomings of the above structure, but also the research and personal research of the individual. To improve the luminous efficiency of LED i.5 ~ 2 0 defective rate and cause 70% short circuit ^ propose a novel high luminous efficiency1 to improve the luminescence of traditional light-emitting diodes has long been the eager hope of users The inventor is based on many years of experience in luminescence, wool, and sales practice, and his knowledge of the industry, has been researched and designed by various parties, and the luminous diode structure is modified with the same luminous efficiency. [Abstract] The main purpose of the present invention is to Provided is a light emitting diode structure with high luminous efficiency, which uses a substrate with transparency and uses a transparent carrier, and transmits a light path of a light emitting layer through the transparent carrier to emit light to improve its luminescence. effectiveness. A secondary object of the present invention is to provide a light-emitting polar structure with high luminous efficiency, which is provided on a p-type semiconductor layer using a reflective layer to reflect the light of the light-emitting layer through the transparent carrier and emit. Another object of the present invention is to provide a light-emitting diode structure with high luminous efficiency, which is designed as a lenticular lens using the exit surface of the transparent carrier, so that the light-emitting diode can transmit light through the transparent Load

Page 8 1229951 V. Description of the invention (4) Focus it. In order to achieve the above-mentioned advantages and effects, the present invention is a light-emitting diode structure with high luminous efficiency. It is disclosed that a light-emitting diode wafer with a transparent substrate is used, and a light-transmitting adhesive is used. The light-emitting diode chip is connected to a transparent carrier, and the transparent carrier is located below the light-emitting diode. The light-emitting diode chip is connected to the light-emitting diode chip with an opaque packaging layer. The transparent carrier is encapsulated, and the transparent carrier is only unencapsulated at the bottom. At this time, the light of the light-emitting layer of the light-emitting diode chip will emit the light through the transparent carrier below. A reflective layer is provided above one of the P-type semiconductor layers of the light-emitting diode to completely reflect the light of the light-emitting layer and emit the light through the transparent carrier to improve the light-emitting efficiency of the light-emitting diode. [Embodiment] In order for your review members to have a better understanding and understanding of the structural features and achieved effects of the present invention, I would like to provide a better embodiment and a detailed description, as described below: The present invention is to solve The light emitting path of the light emitting diode of the conventional technology is to transmit light through a transparent encapsulation layer, but because the positive and negative electrodes of the light emitting diode are located above the light emitting layer, the light of the light emitting layer is shielded or Absorption will reduce the luminous efficiency of the light-emitting diode. In addition, F 1 ipchippackage seals the surface of the element crystal grains downward, which will cause a short-circuit problem and increase the defect rate by 60 to 70%. Therefore, this sun and moon system provides a light emitting diode structure to improve its light emitting efficiency. μ

1229951 V. Description of the invention (5) First, please refer to the second figure, which is a schematic diagram of the structure of a light emitting diode according to a preferred embodiment of the present invention; It is to be noted that the light emitting diode 1 structure of the dot matrix package with high luminous efficiency of the present invention is mainly composed of a light emitting diode wafer 10, which includes a substrate 105, a semiconductor layer 5 'The semiconductor layer 5 is connected to the upper part of the substrate 105, and has an N-type semiconductor layer 110, a light-emitting layer 120, and a p-type semiconductor layer 130. The light-emitting layer 120 is interposed between the N-type semiconductor Layer 1 1 0 and the p-type semiconductor layer 1 3 0; a positive electrode pad 13 2 is located on the P-type semiconductor layer 1 3 0; a negative electrode pad 1 12 is located on the N-type semiconductor layer The substrate 105 may be a sapphire substrate (Saphh ire) or a silicon carbide (Si C) substrate or a sapphire substrate (Saphhire) used for a general blue light emitting diode. ); Or selected from aluminum nitride (A1N), glass (Glass), gallium phosphide (Ga P), gallium arsenide (GaAsP), zinc sulfide (Z n S e), zinc sulfide (Z n S), zinc selenide (zn SS e), structured boron (BxPy), calcium fluoride ( CaF2). The light-emitting layer may be a GaN light-emitting layer of a sapphire substrate (Saphhire) used for a green light-emitting diode or a silicon carbide (S i C) substrate used for a blue-light-emitting diode. (S i C) a light emitting layer or a gallium nitride (GaN) light emitting layer or a gallium nitride (GaN) light emitting layer of a sapphire substrate (Saphhire) used for a blue light emitting diode; or may be a metal, nitride, oxide, One of the groups of fluorides or any combination thereof. A transparent carrier 30, which is located below the light-emitting diode wafer 5.

Page 10 12299951 V. Description of the invention (6) side, and a light-transmissive adhesive layer 20 is used to connect it; wherein the adhesive layer 20 is made of a material with high transparency, such as epoxy resin , Silicone, BCB (B-staged bi sbenzocyclobutene; BCB) resin or polyamine, etc., and the transparent support 30 also uses a high light transmission support, such as glass, sapphire, Mingzhen spinel , Broken rubber, epoxy resin or polyamine, which is also different from the conventional technology using opaque carriers, such as: metal brackets, PC circuit boards and so on. A first metal bracket 42 connected to the positive electrode pad 132 through a first wire 420; a first metal bracket 44 connected to the negative electrode pad 1 12 through a second wire 440; and An encapsulation layer 50 is used to encapsulate the light-emitting diode wafer 5 and the transparent carrier 30. The encapsulation layer 50 is an opaque material, such as white glue or silver glue. " Furthermore, the light path 1 of the light-emitting layer 12 of the light-emitting diode 100 passes through the N-type semiconductor layer in sequence, the substrate 10, the surfactant 2 and the transparent carrier 3 0, because the structures under the light-emitting layer 1 2 0 are highly transparent, so it will not cause any phenomenon that blocks the behavior or absorption of light. Through this structure, the light system of the conventional light-emitting diode is solved. Emitting through the top will be blocked by the positive and negative poles of the light-emitting diode itself, resulting in a significant decrease in light-emitting efficiency; and in order to increase the luminous efficiency of the light-emitting diode, the invention emits light from below. Therefore, a reflective layer 140 can be disposed above the p-type semiconductor layer 130, so as to guide the light path of the light emitting layer 120 completely downward, so as to increase the light emitting diode 12299951. V. Invention Explain the luminous efficiency of (7). Table again 'Please refer to the third diagram, which is a schematic diagram of the structure of a hair-light polar body on another preferred embodiment of the present invention; as shown in the figure, the present invention discloses: The exit surface 62 can be a lens 64. Please also refer to Figure A. It is a schematic diagram of the light and path of the transparent carrier f in another preferred embodiment of the present invention; as shown in the figure, when the reflection When the incident light of the layer 〇 passes through the exit surface 62 of the transparent bearing 60, the exit surface w can be a lens 64, so the light-emitting diode can be increased to a specific point. use. " The redundancy is helpful for the design of components in its specific field. It is undoubtedly beneficial to supply the product with the bipolar system from the board and the Chengguang side. Therefore, when the transparent line is issued on a one-to-one basis, The invention is comprehensive and profitable, but I feel that the light and load attenuation of the light-sealing board and the square of this hair is attributable to the user according to the law. It is a kind of binding and connection according to the law,-, With light two know-how, we should propose a structure that emits light on a transparent support. Because this solution solves the problem of polar body comparison, the invention is in line with my invention. The special high-light-emitting system contains a load, so that the light layer is known to the next layer. The positive and negative efficiency of the technology are issued at the same time. The high-efficiency electrode is a patent that has a patent application. It has a light-emitting diode structure. The light-emitting diode chip has a light-transmitting path system. After the light emission, since the light path passes through the N-type semiconductor layer and the base is transparent, the shortcoming of the light path of the light emitting layer to shield the light will not create a structure with high luminous efficiency. Novelty, advancement, and prescriptive patent application requirements The Diaoyu Bureau's early granting of a specifier is only one of the preferred embodiments of the present invention.

1229951 V. Description of the invention (8) It is not used to limit the scope of implementation of the present invention. For example, all changes and modifications that are equal in shape, structure, characteristics, and spirit described in the scope of the patent application for the present invention shall be included in the application of the present invention. Within the scope of the patent.

1229951 Schematic illustration of the first picture: it is a schematic diagram of the structure of a light-emitting diode of conventional technology; second picture: it is a schematic diagram of the structure of a light-emitting diode of a preferred embodiment of the present invention, the third picture : It is a schematic diagram of the structure of a light emitting diode according to another preferred embodiment of the present invention; and FIG. 3A is a schematic diagram of the light path of a transparent carrier according to another preferred embodiment of the present invention. [Simplified description of drawing number] Γ packaged light-emitting diode 1 3 2 positive electrode pad 1 0 'light-emitting diode wafer 1 1 2 negative electrode liner 2 0' adhesive 1 4 0 reflective layer 3 0 'carrier 42 A metal bracket 1 0 5 ′ substrate 4 2 0 first metal line 1 1 0 ′ N-type semiconductor layer 440 second metal line 1 2 0 ′ light-emitting layer 44 second metal support 1 3 0 ′ P-type semiconductor layer 50 0 package Layer 1 3 2 'Positive anode 6 0 Carrier 1 1 2' Negative anode 6 2 Exit surface 42 'First metal bracket 64 lens 4 2 0' First metal wire 1 0 0 Light emitting path 4 4 0 'Second Metal wire 2 0 0 incident light 44 'second metal bracket 3 0 0 outgoing light 5 0' encapsulation layer 1 0 0 'light emitting path

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1229951 Brief description of the drawing 1 Encapsulated light emitting diode 5 Semiconductor layer 1 〇 Light emitting diode wafer 2 0 Adhesive layer 3 0 Carrier 1 0 5 Substrate 1 1 〇 N-type semiconductor layer 1 2 0 Light emitting layer 1 3 〇 P-type semiconductor layer

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Claims (1)

1229951 VI. Scope of patent application 1 · A light emitting diode structure with high luminous efficiency, the main structure includes: σ a light emitting diode wafer, which includes: a substrate; a semiconductor layer, the semiconductor layer is connected to the An upper part of the substrate, a type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a t-light emitting layer is interposed between the N-type semiconductor layer and one of the p-type semiconductor layers; And a negative electrode pad is located on the N-type semiconductor layer; a transparent carrier is located under the light-emitting diode, and an optical adhesive layer is connected to it; a first metal support is transmitted through A first wire is lined with the positive electrode; a second metal support is lined with the negative electrode through a second wire; and a packaging layer for packaging the light emitting diode chip and the transparent carrier package; The light path of the light-emitting layer under the transparent carrier is not transmitted through the encapsulation layer 3, and the light path is to transmit light through the transparent support. 2. The light emitting structure with high luminous efficiency as described in item 1 of the scope of patent application, wherein the substrate is a sapphire x substrate d. The light emitting device with high luminous efficiency as described in item 1 of the scope of patent application The structure is such that the substrate is a gallium nitride substrate. The system includes an N —, and the room; and the pad is connected to the pad to connect it to seal the object,-polar body l body knot 12299951 >, patent application Fanyuan rule ^ 4, such as the patent application harrowing around the first item The light-emitting diode and structure with high light-emitting efficiency, wherein the substrate is a carbonized carbide (S 丨 C). 5. The light-emitting diode structure with high luminous efficiency as described in the patent application, where the substrate is a nitride nitride (A 1 N). 6. The light-emitting diode structure with high luminous efficiency as described in item 1 of the target range of the patent application, wherein the substrate is a glass (G 1 a s s). 7. The light-emitting diode with high luminous efficiency as described in item 1 of the patent application structure, wherein the substrate is a gadolinium phosphide (GaP). 8. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of patent application, wherein the substrate is gallium phosphorous arsenide (GaAsP). 9. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the substrate is a petrochemical (Z n Se). Photodiode 10. The structure with high luminous efficiency as described in item 1 of the patent application range, wherein the substrate is zinc sulfide (Z n S). Polar body 1 1 The structure with high luminous efficiency as described in item 1 of the scope of patent application, wherein the substrate is a petrochemical zinc sulfur (ZnSSe). 1 2. The light-emitting diode structure with high light-emitting efficiency as described in item 1 of the patent application model, wherein the substrate is a phosphite (B X P y). 1 3 · The light-emitting diode structure with high luminous efficiency as described in item 1 of the patent application chart, wherein the substrate is calcium fluoride (CaF2). 1 4 · A structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the P-type semiconductor layer includes an anti-W / body 1 5 · as high as stated in item 14 of the patent claim Luminous Diode Structure with Luminous Efficiency 'wherein the reflective layer comprises aluminum. Page 17 1229951 6. Scope of Patent Application 16 · The light-emitting diode structure with high luminous efficiency as described in Item 14 of the scope of patent application, wherein the reflective layer contains gold. 17. The light-emitting diode structure with high luminous efficiency as described in item 14 of the scope of patent application, wherein the reflective layer comprises silver. 1 8 .. The light-emitting diode structure with high luminous efficiency according to item 14 of the scope of patent application, wherein the reflective layer may be one of the group consisting of metal, nitride, oxide, and fluoride Or any combination thereof. 19. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the transparent carrier comprises glass. 2 0 · The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the transparent carrier comprises sapphire (Saphh i r e). 2 1. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the transparent carrier comprises magnesium-aluminum spinel. 2 2. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the transparent carrier comprises an epoxy resin. 2 3. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the transparent carrier comprises silicon (Si 1 i cone). 24. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the transparent support comprises polyamine. 25. The light-emitting diode structure with high luminous efficiency as described in item 1 of the patent application diagram, wherein the substrate is a silicon cone (Si 1 i cone). 26. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the light-transmissive adhesive layer includes epoxy resin. 2 7. Light-emitting diode with high luminous efficiency as described in item 1 of the scope of patent application Page 18 1229951 VI. Scope of patent application Structure, in which the light-transmissive adhesive layer contains polyamide. 28. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the light-transmissive adhesive layer includes Silicone. 29. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the light-transmissive adhesive layer comprises B C B (B-s t a g e d bisbenzocyclobutene; BCB) resin. 30. The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the encapsulation layer comprises a silver paste. 3 I The light-emitting diode structure with high luminous efficiency as described in item 1 of the scope of patent application, wherein the encapsulation layer contains white glue. Page 19