TWI229472B - Ceramic, low-temperature co-fired ceramic ferrite composite material, method for preparing slurry, and method for manufacturing combined filter inhibiting electromagnetic interference - Google Patents

Ceramic, low-temperature co-fired ceramic ferrite composite material, method for preparing slurry, and method for manufacturing combined filter inhibiting electromagnetic interference Download PDF

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TWI229472B
TWI229472B TW91124451A TW91124451A TWI229472B TW I229472 B TWI229472 B TW I229472B TW 91124451 A TW91124451 A TW 91124451A TW 91124451 A TW91124451 A TW 91124451A TW I229472 B TWI229472 B TW I229472B
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appropriate amount
ceramic
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low
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Chaby Hsu
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Abc Taiwan Electronics Corp
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Abstract

The present invention relates to a ceramic, a low-temperature co-fired ceramic-ferrite composite material, a method for preparing them, and a filter inhibiting electromagnetic interference (EMI). The invented method mainly comprises performing a low temperature co-firing on a ceramic-ferrite heterojunction material. In addition to using a glass-filled binder, the following factors are considered for obtaining an optimum heterojunction binding: sintering shrinkage affected by different junction materials, amount of addition of glass component, and sintering shrinkage affected by the particle size of material powder and thickness of dielectric layer. The invented low-temperature co-fired ceramic ferrite composite material can be used to produce anti-EMI versatile combined passive devices and has an excellent electromagnetic coupling effect.

Description

12294721229472

本發明係有關陶瓷、陶瓷-鐵氧磁體低溫共燒複合材 料及其製備以及防止電磁干擾之多元化組合式被動元件, 即利用異介質材料陶瓷-鐵氧磁體(Ceramic〜Ferrite)低 溫共燒’製作能防止電磁干擾的濾波元件(EM丨Lc ·The invention relates to a ceramic, ceramic-ferrite magnet low-temperature co-fired composite material and its multiple combined passive components for preparing and preventing electromagnetic interference, that is, a ceramic-ferrite magnet (Ceramic ~ Ferrite) low-temperature co-fired using a different dielectric material. Making filter elements (EM 丨 Lc ·

Fi Iter ),其除了添加玻璃填充成分來作結合外,為求燒 結後得到最佳的異介質結合,考慮不同介質材料的燒結收 縮性問題以及玻璃成分的添加量,燒結收縮性問題牵涉到 原料粉體粒徑大小及介電層厚度的設計,本發明主要在於 陶曼-鐵氧磁體(Ceramic - Ferrite )異介質低溫共燒之 材料及榮:料製備技術,藉由積層式被動元件製程,製作有 關防止電磁干擾(EMI)之多元化組合式被動元件。 、異介質材料Ceramic - Ferrite低溫共燒製作相關的 電磁遽波元件,對元件的電氣特性而言,同時兼具低損失 (low l〇ss)的電容材料及高電磁偶合(high 、 electromagnet ic couple)的電感材料。此一材料若是用 於模組的開發,將不需要考慮模組的電磁相容(EMC)問 題。為了證明此種異介質材料_有優越電磁偶合效應,以 下將簡介單一陶瓷材料與單一鐵氧磁體材料對異介質複合 性材料的比較。 · °Fi Iter), in addition to adding glass filler components for bonding, in order to obtain the best heterodielectric bonding after sintering, consider the sintering shrinkage of different dielectric materials and the amount of glass components added. The sintering shrinkage problem involves raw materials. The design of the particle size of the powder and the thickness of the dielectric layer, the present invention mainly lies in the ceramic-ferrite magnet (Ceramic-Ferrite) heterodielectric low-temperature co-firing materials and materials manufacturing technology, through the laminated passive component process, Production of diversified combined passive components related to the prevention of electromagnetic interference (EMI). , Different dielectric materials Ceramic-Ferrite co-firing low-temperature co-fired electromagnetic wave components, for the electrical characteristics of the device, at the same time both low-loss (low 10s) capacitor materials and high electromagnetic coupling (high, electromagnet ic couple ) Inductive material. If this material is used for module development, it will not need to consider the electromagnetic compatibility (EMC) of the module. In order to prove that this heterodielectric material has superior electromagnetic coupling effect, the comparison of a single ceramic material and a single ferrite magnet material to a heterodielectric composite material will be introduced below. °

左陶瓷材料在電阻、電容、電感等被動電子元件的應用 上k處可見,不論是資訊、通訊或軍事均不可避免使用陶 竞電子元件。晶片型電子零件主要製造方式有薄膜及厚膜 兩種,在厚膜製造上,陶瓷材料提供壯cc所需的高介電值 及穩定耐候的載體,目前低介電值陶瓷(Ah%)更是高頻晶The left ceramic material can be seen in the application of passive electronic components such as resistors, capacitors, inductors, etc. It is inevitable to use ceramic electronic components whether it is information, communication or military. There are two main types of wafer-type electronic parts: thin film and thick film. In thick film manufacturing, ceramic materials provide the high dielectric value and stable weather-resistant carrier required for strong cc. At present, low dielectric ceramic (Ah%) is more High frequency crystal

1229472 五、發明說明(2) •一 片型電感的主流材料。在薄膜電子零件製造上,陶究材料 也是主要的基板或載體來源。目前以陶瓷材料為基礎的電 子元件發展方向主要有:(1)小尺寸、多層數、高單位體 積之電容值或電感值,以滿足電子產品的往短小輕薄及高 功能密度發展。(2)往模組化發展,用被動網路元件 (network components)的方式,整合數個被動元件於單一 晶片内,以減少PCB上被動元件的數目及使用面積,降低 成本同時可以提高性能表現與可靠度。先進製程技術發裊 者認為’以上兩種發展趨勢為人類實現對新穎電子產品欲 望的階段性技術演進,較具未來性的解決方案為朝向模= 化製程發展,其歷程為首先整合所有被動元件(電阻、 電容、電感、傳輸線及匹配線路),接下來為整合的功能 性模組’再來是整合異介質的功能性模組。 現今低溫共燒陶竟(Low Temperature Co-fired1229472 V. Description of the invention (2) • Main material of one-chip inductor. In the manufacture of thin-film electronic parts, ceramic materials are also the main source of substrates or carriers. At present, the development direction of electronic components based on ceramic materials is mainly: (1) small size, multi-layer number, high unit volume capacitance or inductance value, in order to meet the development of electronic products in the short, thin, and high functional density. (2) Moving towards modularization, using passive network components, integrating several passive components in a single chip to reduce the number of passive components on the PCB and use area, reduce costs and improve performance And reliability. The creators of advanced process technology believe that the above two development trends are the staged technological evolution of mankind's desire for new electronic products. The more futuristic solution is the development of modular process. The process is to first integrate all passive components. (Resistance, capacitance, inductance, transmission line, and matching line), the next is the integrated functional module. The next is the functional module that integrates different media. 2. Low Temperature Co-fired

Ceramics ; LTCC )材料及製程技術已經被驗證其在盔線 通訊、衛星通Ifl、線路封裝、車用電子等均有優勢的應用 利基。低溫共燒陶瓷是由高溫共燒陶瓷演進而來,由於添 加玻璃填充物之故,使得陶瓷體的燒結溫度可以降低至、、 850〜950 °C之間,如此就可以搭配高導電性金屬塗料共 燒,例如金、銀、銅、銀〜鈀等,實現高品質因素(q factor)線路。若搭配3D多層結構,更可實現小尺寸及特 殊規格設計,如今已經成為無線通訊元件或線路製程的 擇:-,*晶片濾波器、晶片天線、功率放大器、藍芽模Ceramics; LTCC) materials and process technology have been proven to have advantages in helmet line communication, satellite communication Ifl, circuit packaging, automotive electronics and other advantages. Low-temperature co-fired ceramics evolved from high-temperature co-fired ceramics. Due to the addition of glass fillers, the sintering temperature of the ceramic body can be reduced to between 850 and 950 ° C, so that it can be used with highly conductive metal coatings. Co-firing, such as gold, silver, copper, silver to palladium, etc., to achieve high quality factor (q factor) circuits. If it is equipped with a 3D multilayer structure, it can achieve small size and special specifications. Now it has become the choice of wireless communication components or line processes:-, * chip filters, chip antennas, power amplifiers, Bluetooth modules

1229472 五、發明說明(3) ^ M塑^材料目前仍然是多層積體電路板(BGA )的主要 -ί帝低溫共燒陶瓷LTCC技術基於:(1)可以整合被動 哭人nr & 電感。(2 )可整合被動電路,例如遽波 4*说綠己、路。(3)咼密度連結(interconnection),可 却yί ^寸並大幅度的降低成本,被視為無線及寬頻通 s::且、取佳實現技術之一。所以如果能擴充使用群及發 i f工具,增進設計者對陶瓷優點與應用的了解,進而 田1、u、:广j无的應用面,未來低溫共燒陶瓷製程技術 疋可1成為设計者心中的主流技術。 1 9 9 1年後日本及歐美被動元件大廠開始利用單一陶 材料或鐵氧磁體材料製作較簡單的LC渡波器(T type 足1 1制二fUter),由於當時的技術及製程能力不 、衣的濾波70件尺寸較大,多數用於FM、AM廣播系 f。j年來隨著通信頻率提高,陸續有藍芽Bluet〇〇th、、 寬頻無線區域網路㈣相關的遽波元件問世,其製程多為 ”,式低溫共燒陶訂KG製作,所使用的材料為不$ 較低介電值(Κ = 4. 7〜13)陶瓷材料。 Π 有關陶竟(Ceramic) _鐵氧磁體合材料 低溫共燒所製作的LC濾波器’於五年前日本雨有發展^ 類冑氧磁體複合材料的m件,但是由於電 敗特性不是很好。近年日本電氣硝子公司及韓國 Ceratech.也發展出類似TDK的異介質共燒技術,但是其 溫共k技術不佳,往往造成樣品龜裂或是翹曲。故而目浐 國内外被動it件大廠正重新積極從事此類低溫共燒 =1229472 V. Description of the invention (3) ^ M plastic ^ materials are still the mains of multilayer integrated circuit boards (BGA)-LT low temperature co-fired ceramic LTCC technology is based on: (1) can integrate passive crying nr & inductor. (2) Passive circuits can be integrated, such as Qin Bo 4 * said green self, road. (3) High-density interconnection (interconnection), which can reduce the cost significantly and is considered as one of the best implementation technologies for wireless and broadband communication. Therefore, if you can expand the use of group and if tools to enhance the designer ’s understanding of the advantages and applications of ceramics, and then the application of Tian 1, u,: Guang j Wu, future low temperature co-fired ceramic process technology will not be able to become a designer. Mainstream technology in mind. After 1991, Japanese and European and American manufacturers of passive components began to use simple ceramic materials or ferrite magnet materials to make simpler LC ferrules (T type was 1 1 to 2 fUter). Due to the lack of technology and process capabilities at the time, 70 pieces of clothing filter are large in size, most of which are used in FM and AM broadcasting systems f. With the increase of communication frequency in the past j years, Bluetooth Bluetooth, broadband wireless LAN, and other related wave components have come out, and their manufacturing processes are mostly ", low-temperature co-firing pottery KG production, materials used For ceramic materials with lower dielectric value (K = 4. 7 ~ 13). Π LC ceramic made by low temperature co-firing of ceramics _ ferromagnetic composite materials. Developed m pieces of ytterbium-like magnet composite materials, but the electrical failure characteristics are not very good. In recent years, Japan Electric Glass Co., Ltd. and South Korea Ceratech. Have also developed TDK-like heterodielectric co-firing technology, but their temperature and k technology are not good. , Often cause the sample to crack or warp. Therefore, domestic and foreign passive parts manufacturers are actively engaged in such low-temperature co-firing =

1229472 五、發明說明(4) ,增加濾波 元件。以個 電源及交換 整體機器内 利用接地之 一般兩端子 因此針對電 小雜訊的設 s h i e 1 d )消 器的電磁偶 人電腦的雜 動作的I C等 ,另外因為 雜訊對策的 構造的電容 腦的雜訊對 計及使用 除輻射雜 開發’目的是利用異介質材料特性 合,製作出體積較小(〇 6 〇 3 )的液、皮 訊為例子來說明,電腦内有交^式 等很多的雜訊發生源,且又分^在 電腦内有很多小接地板,無法_待 效果顯著,加上所發生的雜訊會有 器或電感器無法遽波的頻率等等。 策,經常是使用讓設計本身產生較 Ε ΜI遽波器去除雜訊,利用屏蔽罩(1229472 V. Description of the invention (4), adding filtering element. The power supply and the general two terminals that use the ground in the entire machine are exchanged. Therefore, the IC of the electromagnetic puppet computer for the noise of the small noise is set up, and the capacitor IC is constructed because of the noise countermeasure. The purpose of the development of noise reduction and radiation elimination is to make use of the characteristics of different dielectric materials to produce a smaller volume (0,063) of liquid and piconet as examples to illustrate. There are many sources of noise generation, and there are many small grounding plates in the computer, which cannot be significant, and the noise that occurs can be caused by the frequency of the device or inductor that can not wave. The strategy is often to use a EMI filter to remove noise from the design itself, and use a shield (

訊。EM I遽波器通常是指由電感器和電容器所組合而構成 的低通渡波器,低通濾波器可以由僅使用電容器及電感器 的情形,到使用數個電感器和電容器所組合而成,有各種 不同型態的電路元件成品,積層晶片EM I濾波器即是將數 個積層晶片電感器與積層晶片電容器,經電路設計及積層 晶片元件製程整合為一體,具有單石結構(M〇nol i thicNews. The EM I wave filter usually refers to a low-pass wave filter composed of an inductor and a capacitor. A low-pass filter can be composed of only a capacitor and an inductor, and a combination of several inductors and capacitors. There are various types of circuit element finished products. The multilayer chip EM I filter is a combination of several multilayer chip inductors and multilayer chip capacitors through circuit design and multilayer chip component manufacturing processes. It has a monolithic structure (M〇 nol i thic

Structure)且小型化(尺寸3· 2 x 1· 6mm),適用於表面黏著 技術。Structure) and miniaturization (size 3 · 2 x 1 · 6mm), suitable for surface adhesion technology.

就材料對濾波元件的電氣特性分析。若利用一般LTCC 製程的陶瓷材料製作濾波元件,其插入損失insert ion loss (dB)對頻率Freq· (Hz)的圖形中,我們可以看見從 3dB〜20dB的插入損失區間,其頻寬高達6〇〇mHz以上,此元 件無法用於通信類產品的授話系統遽波。再則若利用陶瓷 材料所製作符合Bluetooth ( 2· 45 GHz )或 WLAN ( 5.0 GHz )安規的高頻濾波器,其實沒有必要。因為當信號頻Analysis of the electrical characteristics of filter elements based on materials. If a filter element is made of a ceramic material made by a general LTCC process, its insertion loss (dB) versus frequency Freq · (Hz) can be seen in the insertion loss range from 3dB to 20dB, and its bandwidth is as high as 60%. Above 〇mHz, this component cannot be used in the speech system of communication products. Furthermore, if ceramic materials are used to make high-frequency filters that comply with Bluetooth (2.45 GHz) or WLAN (5.0 GHz) safety regulations, it is not necessary. Because when the signal frequency

Claims (1)

12¾¾¾ W12¾¾¾ W — Ιβ 91124451 1.—種「陶瓷低溫共燒材料 調配適當比例的介電陶瓷及_ i a l括有依介電常數值來 成分為欽酸鋇,:欠要成分為氧一 物’並:力比例的财來增加纟二:強t H 共燒材料_備方法」,包括有. 該:適當比例的介電陶究及二氧… 旦二磁+ 一去备|成分為欽酸鎖,:欠要成分為氧化銘及少 里的稀土疋素氧化⑯,並添加適當比例的硼砂,依適當比 2放入内含不同粒徑氧化鍅球的球磨罐中,之後添加適量 的乙醇、甲苯及分散劑,球磨機設定低轉速,研磨成適當 粒徑; 取上述適里桌料添加適量黏結劑及適量塑化劑,均勻混 合即成。 3.依據申請專利範圍第2項所述之「陶瓷低溫共燒材料 漿料製備方法」,其中,該粒徑控制在〇. 1 5〜〇 . 2 3 // m。 4 · 一種「鐵氧磁體低溫共燒材料漿料製備方法」,包括 有·· 依初導磁率值來調配適當比例的三氧化二鐵、氧化鎳、 氧化辞及氧化銅,取適量鐵氧磁體配方粉體加入適量R. 〇 水及適量分散劑,均勻攪拌後烘乾製程粉末;將前述粉末 煆燒7 5 0 °C,持溫2小時;取煆燒完成的適量粉末添加適量 乙醇、曱苯及分散劑,至内含不同粒徑氧化錯球的球磨罐 中研磨,使粉體粒徑控制在0 · 4 5〜0 · 5 0 // m ;取上述適量漿 料添加適量黏結劑及適量塑化劑,均勻混合即成— Ιβ 91124451 1. — A kind of "ceramic low temperature co-fired material with appropriate proportion of dielectric ceramic and _ ial includes barium octylate according to the dielectric constant value: less important component is oxygen one substance 'and: force ratio To increase the wealth of the second: strong t H co-fired materials _ preparation methods, "including: The: Proper ratio of dielectric ceramics and dioxygen ... Denier two magnets + one to prepare | composition is cinnamic acid lock, owing The main ingredients are oxidized oxide and shari rare earth element hafnium oxide thorium oxide, and an appropriate proportion of borax is added. According to an appropriate ratio, 2 is placed in a ball mill tank containing thorium oxide balls of different particle sizes, and then an appropriate amount of ethanol, toluene and dispersion Set the low speed of the ball mill and grind to the appropriate particle size. Take the appropriate table material and add an appropriate amount of a binder and an appropriate amount of plasticizer, and mix evenly. 3. According to the "method for preparing a ceramic low temperature co-fired material slurry" described in item 2 of the scope of the patent application, wherein the particle size is controlled to 0.1 5 to 0.2 3 // m. 4 · A "method for preparing ferrite magnet low temperature co-fired material slurry", which includes: · The appropriate proportion of ferric oxide, nickel oxide, oxide and copper oxide is adjusted according to the initial permeability value, and an appropriate amount of ferrite magnet is taken. Formula powder is added with an appropriate amount of R. 〇 water and an appropriate amount of dispersant, and the process powder is dried after being stirred uniformly; the aforementioned powder is calcined at 750 ° C and held at temperature for 2 hours; the appropriate amount of powder after calcination is added and an appropriate amount of ethanol and Benzene and dispersant are ground in a ball mill tank containing oxidized balls with different particle diameters to control the particle size of the powder to 0 · 4 5 ~ 0 · 5 0 // m; take the appropriate amount of the above slurry and add an appropriate amount of binder and Moderate amount of plasticizer, mix evenly 第14頁Page 14 、依介電常數值來調配適當比例的介電 並添加適當比例的硼砂,依適當比例放 化锆球的球磨罐中,之後添加適量的乙 劑,球磨機設定低轉速,研磨成適當粒 "J、、加適量黏結劑及適量塑化劑, 、曰 漿料; ^ % &依初導磁率值來調配適當比例的三氧 氧化鋅及氧化銅,取適量鐵氧磁體配方 水及適1分散劑,均勻攪拌後烘乾製程 7^0 c,+持溫2小時,取煆燒完成的適量 醇、甲苯及分散劑,至内含不同粒徑 =磨成適當粒徑,取適量漿料添加適量 蜊’ j勻混合成鐵氧磁體低溫共燒漿料 將則製備陶瓷低溫共燒漿料經生胚製 孔内電極印刷製程成一層體; ^1前製備鐵氧磁體低溫共燒漿料經生 一填孔—内電極印刷製程成一層體 陶瓷及二氧化矽, 入内含不同粒徑氧 醇、甲苯及分散 徑’再取適量漿料 合成陶瓷低溫共燒 化二鐵、氧化鎳、 粉體加入適量R . 〇 粉末,將粉末煆燒 粉末添加適量乙 化錘球的球磨罐中 黏結劑及適量塑化 帶 沖孔 填 沖孔 —>>1. Adjust the appropriate proportion of the dielectric according to the dielectric constant value and add the appropriate proportion of borax. Then, put the zirconium ball mill in the proper proportion, and then add the appropriate amount of B. The ball mill is set to a low speed and milled into appropriate grain. &Quot; J. Add an appropriate amount of binder and an appropriate amount of plasticizer, or paste; ^% & Dispose an appropriate proportion of zinc trioxide and copper oxide according to the initial permeability value, take an appropriate amount of ferrite magnet formula water and apply 1 Dispersant, uniform stirring and drying process 7 ^ 0 c, + holding temperature for 2 hours, take the appropriate amount of alcohol, toluene and dispersant after sintering to a different particle size = grind to a suitable particle size, take an appropriate amount of slurry Add appropriate amount of clam'j and mix into ferrite magnet low-temperature co-firing slurry. The ceramic low-temperature co-firing slurry is prepared into a single layer through the internal electrode printing process of the raw embryo; ^ 1 prepare ferrite magnet low-temperature co-firing slurry. After a hole-filling-internal electrode printing process, a layer of ceramic and silicon dioxide is formed. After containing different diameters of oxyalcohol, toluene, and dispersion diameter, and then taking an appropriate amount of slurry to synthesize ceramics, low-temperature co-fired ferrous iron, nickel oxide, Add the appropriate amount of R. 〇 powder , Powder calcination powder addition amount of B hammer ball mill pot with a bonding agent and an appropriate amount of plasticized fill punch punching - > > 第15頁Page 15 第16頁 ,4f 2明 K=12 K=27 K=36 K=50 wt (g) wt % wt (g) wt % wt (g) wt % wt (g) wt % Dielectric Ceramic K=100 75.0 66.37 100.0 72.46 220.0 85.27 320.0 92.7 Si02 30.0 26.55 30.0 21.74 30.0 11.63 20.0 5.8 Na2B4O7*10H2O 8.0 7.08 8.0 5.80 8.0 3.10 5.3 1.5 Total 113.0 100.00 138.0 100.00 258.0 100.00 345.3 100.00 第一圖 //i=25 //i=100 ju i=500 ju i=750 Wt (g) mol % wt (g) mol % wt (g) mol % wt (g) mol % Fe2〇3 334.71 48.20 329.60 48.00 327.74 48.24 327.47 48.30 NiO 145.60 44.83 77.34 24.08 32.68 10.28 21.97 6.93 ZnO 6.56 1.85 61.80 17.66 108.48 31.34 112.02 32.43 CuO 17.70 5.12 35.06 10.25 34.31 10.14 41.67 12.34 Total 504.57 100.00 503.80 100.00 503.21 100.00 503.13 100.00 第二圖 firing curvePage 16, 4f 2 Ming K = 12 K = 27 K = 36 K = 50 wt (g) wt% wt (g) wt% wt (g) wt% wt (g) wt% Dielectric Ceramic K = 100 75.0 66.37 100.0 72.46 220.0 85.27 320.0 92.7 Si02 30.0 26.55 30.0 21.74 30.0 11.63 20.0 5.8 Na2B4O7 * 10H2O 8.0 7.08 8.0 5.80 8.0 3.10 5.3 1.5 Total 113.0 100.00 138.0 100.00 258.0 100.00 345.3 100.00 First picture /// i = 25 // i = 100 ju i = 500 ju i = 750 Wt (g) mol% wt (g) mol% wt (g) mol% wt (g) mol% Fe2〇3 334.71 48.20 329.60 48.00 327.74 48.24 327.47 48.30 NiO 145.60 44.83 77.34 24.08 32.68 10.28 21.97 6.93 ZnO 6.56 1.85 61.80 17.66 108.48 31.34 112.02 32.43 CuO 17.70 5.12 35.06 10.25 34.31 10.14 41.67 12.34 Total 504.57 100.00 503.80 100.00 503.21 100.00 503.13 100.00 The second figure firing curve 第三圖Third picture
TW91124451A 2002-10-17 2002-10-17 Ceramic, low-temperature co-fired ceramic ferrite composite material, method for preparing slurry, and method for manufacturing combined filter inhibiting electromagnetic interference TWI229472B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420718B (en) * 2006-08-18 2013-12-21 Inpaq Technology Co Ltd Laminated electronic device and manufacturing method thereof
US9414534B2 (en) 2012-06-05 2016-08-09 Industrial Technology Research Institute EMI shielding device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420718B (en) * 2006-08-18 2013-12-21 Inpaq Technology Co Ltd Laminated electronic device and manufacturing method thereof
US9414534B2 (en) 2012-06-05 2016-08-09 Industrial Technology Research Institute EMI shielding device and manufacturing method thereof
TWI562718B (en) * 2012-06-05 2016-12-11 Ind Tech Res Inst Emi shielding device and manufacturing method thereof

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