1225111 06067twfl.doc/006 修正日期92.6.10 玖、發明說明： 本發明是有關於一種電鍍裝置，且特別是有關於一種 應用於半導體之銅鑲嵌製程（copper damascene)之電鍍裝 置。 當積體電路的積集度增加，使得晶片的表面無法提供 足夠的面積已製作所需的內連線時，爲了配合金氧半導體 (metal oxide semiconductor)電晶體縮小後戶斤需增力口的內連 線需求，多重金屬化製程變逐漸成爲許多積體電路元件所 採用的方式。對半導體元件後段製程而言，隨著金屬線寬 (width of metal line)的日漸縮小，金屬線所承受之電流密 度(current density)，相對地逐漸增大。傳統以錦金屬爲主 所形成之金屬線，遭受到電致遷移(electron migration，EM) 效應的影響，進而導致元件之可靠度(reliability)降低。而 且隨著金屬線寬的日漸縮小，金屬線的阻値（resistance)也 會隨之越來越高。爲了解決上述半導體元件進入深次微米 製程時所遭遇的問題，使用電致遷移極小，以及阻値低的 銅金屬就成所有半導體元件製造者一致的選擇。 將金屬銅應用在金屬內連線的製程上，可提供無數的 優點，因爲銅具有低阻値、高熔點、高抗電致遷移的能力 (EM resistance)等優點；而且銅的內連線電路可以改善晶 片的運作速率，相較於鋁，銅內連線可以提供高約兩倍的 運作速率’利用金屬鑲嵌的製程來形成銅內連線的結構， 不但可以降低RC延遲時間，還可以降低內連線之間的靜 電電容量。因此，爲了提高元件積集度，以及元件導通速 4 6〇67twfl .doc/〇〇6 修正日期92.6.10 度，使用金屬銅來形成金屬內連線的結構已成爲一種趨 勢。 但是銅金屬本身具有不易被一般蝕刻氣體所蝕刻的特 性，因此銅金屬導線的製作，就不能再以傳統之製造方法 來完成，於是提出金屬鑲嵌的製程來解決此問題。 金屬鑲嵌法係爲一種在介電層中先蝕刻出金屬內連線 的閼口，再塡入金屬當作內連線的方法，此法可以滿足再 製程中，對製作出的內連線必須具有高可靠度及高良率的 要求’所以此法已成爲涂次微米（sub-quarter micron)中內 連線製造方法的最佳選擇。 習知製作銅金屬內連線時，是利用物理氣相沈積法先 在具有開口的介層洞上覆蓋一層薄且共形的銅金屬晶種 層，利用電鍍法形成一層銅金屬層，之後以化學機械硏磨 法來移除塡充於開口以外以高出介電層以外的銅金屬層。 因爲金屬銅的質地較軟，且習知的電鍍方法形成之銅金屬 層分布較不均勻，因此在進行化學機械硏磨時，容易有凹 陷與表面均勻度變差的問題產生。 此外，習知進行銅金屬層的電鍍時，在電鍍裝置中每 次僅放置一片晶圓，因此製作整批晶圓須耗費相當長的時 間，不僅整個製程的產能無法提高，也相對會提高製作的 成本。 有鑑於此，本發明提供一種電鍍裝置，進行銅金屬層 的電鍍時，採用批次沈積的方式取代單片沈積的方法’每 批次的晶圓數量爲25片，因此可以大幅提高製程的產能。 06067twfl.doc/006 修正日期92.6.10 本發明提供的電鍍裝置至少包括一個沈積匣（cassette) 放置於電鍍槽之陰極、銅片或銅棒放置於電鍍室之陽極。 其中電鍍室可以放置25片晶圓，每一片晶圓的兩端分別 被晶圓夾（wafer clamp)固定，晶圓夾與陰極相接，與晶圓 作電性接觸；而連接陽極的銅棒或銅片可以是一大片，放 置於沈積匣開口外側，也可以是由呈梳狀排列的25個小 銅片組成，分別交錯延伸至晶圓之間的空隙中。 在進行電鍍時，因爲位於沈積匣中央的晶圓會受到相 鄰晶圓的電性影響，因此沈積效果會較分布於沈積匣上方 與底部的晶圓好，爲了使每片晶圓的沈積效果可以一致， 因此在位於沈積匣上方與底部的1〜4片晶圓須施加較大的 電壓，其電壓値較施加於中央晶圓大約1〜5伏特。 此外，爲了提高銅金屬沈積時的均勻度，本發明進一 步在電鍍槽的底部及兩側加上音波震盪器，於電鍍的同時 提供超音波震盪，使得沈積於晶圓上的銅金屬層具有較好 的均勻度。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式之簡單說明： 第1圖繪示依照本發明一較佳實施例的一種電鍍裝置 簡示圖； 第2A圖與第2B圖分別爲第1圖繪示之電鍍裝置的上 視圖與側視圖； 1225111 06067twfl.doc/006 修正日期92.6.10 第3A圖與第3B圖分別爲第1圖繪示的沈積匣之細說 明的上視圖與側視圖；以及 第4圖繪示爲本發明之電鍍裝置中以金屬片作爲金屬 電鍍源的裝置簡示圖。 圖示標記說明： 100 電鍍裝置 102 電鍍槽 104、104a、104b 沈積匣 106 金屬片或金屬塊 l〇6a 金屬板 108a、108b、108c 音波震盪器 200 晶舟 202 傳送晶圓之機械手臂 206a、206b 批次晶圓 208 晶圓 210 固定夾 212陰極電極 實施例 請參照第1圖，其繪示係依照本發明一較佳實施例的 一種電鍍裝置簡示圖。 圖中所示爲本發明提供之一種電鍍裝置100,包括承 裝電鍍溶液的電鑛槽102、沈積匣104、金屬片或金屬塊 106、以及可以提供音波震盪的音波震盪器108a、108b、 108c。其中，沈積匣104呈门字型，係用以放置欲沈積金 06067twf 1. doc/006 修正日期92.6.10 屬層之晶圓（未顯示），每一晶圓分別與陰極電極電性連接’ 而電鍍液中含有與欲電鍍金屬相同之金屬離子。在本發明 提供之實施例中，沈積匣104可以同時放置一批次(batch) 的晶圓，也就是25片晶圓，相較於習知一次僅能夠進行 一片晶圓的沈積，有助於大於提昇產能。 金屬片或金屬塊106與陽極作電性連接，在電鍍沈積 進行時可以解離補充電鍍液中失去的銅離子，金屬片或金 屬塊106係放置於沈積匣104開口的側邊；而音波震盪器 1〇8a、i〇8b、108c用於增進電鍍液中離子分布的均勻度’ 進一步增進沈積於晶圓上金屬的均勻度，沈積的金屬比如 爲銅，此時所使用的金屬片106就是銅片或銅塊，而所用 &電鍍液則爲含有銅離子之電鑛液。 請參照第2A圖與第2B圖，其繪示分別爲第1圖繪示 t電鍍裝置的上視圖與側視圖。 欲進行電鍍時，整批次206a、206b中的每一片晶圓208 會先由一般的晶舟200中被傳送到沈積匣1〇4中，傳送的 過程由一機械手臂202進行。其中沈積匣104更進一步包 括第〜沈積匣104a與第二沈積匣l(Mb，每一個沈積匣 1()4a、104b均可容納一批次206a、206b的晶圓。在每一 片晶_ 208均被固定在沈積匣104a、l(Mb中之後，沈積 暖“43、104b會被傳送到充滿電鍍液的電鍍槽102中， 沈積匣104a、104b的開口與金屬片（或金屬塊）相對(見第1 _)。 請參照第3A圖與第3B圖分別爲第1圖繪示的沈積匣 1225111 06067twfl.doc/006 修正日期 92.6.10 104之細部說明與第2圖之沈積匣104a、104b的上視圖與 側視圖。在沈積匣104中，每一片晶圓208均由一固定夾 210箝住加以固定，每一片晶圓208透過固定夾210經由 陰極電極212作電性連接，因此固定夾210之材質必須爲 導電性材料。 第4圖繪示爲本發明之電鍍裝置中以金屬片作爲金屬 電鍍源的裝置簡示.圖。本發明於第1圖中繪示的電鍍沈積 源爲金屬塊1 〇6 ’放置於沈積匣1 〇4開口的側邊，而本發 明也可以使用金屬板作爲電鍍沈積源，如第4圖所示，每 一片金屬板l〇6a由沈積匣104開口的一側向沈積匣104 內部延伸，使金屬板106a與晶圓208互相交錯分布，如 此在進行電鍍時，可縮短金屬離子行進的距離。 在本發明中，每一個沈積匣104a、104b均可容納一批 次的晶圓208，也就是25片晶圓，每一片晶圓均以固定夾 固定並與陰極電極作電性連接，在進行電鍍時，電壓會透 過陰極電極施加在晶圓上，藉以使電鍍液中的金屬離子沈 積在晶圓上，由於位於沈積匣中間部分的晶圓上下方均有 晶圓與其相鄰，因此吸引金屬離子的能力高於分布於沈積 匣上部與底部的晶圓。 有鑑於此，爲了使晶圓吸引金屬離子的能力相近，不 因晶圓放置的位置有所差異，故本發明在沈積匣上部與底 部的晶圓上施加的電壓高於施加在中間部位晶圓的電壓， 例如晶圓由上往下依序爲第1片至第25片，在第1至4 片以及第22-25片晶圓上施加的電壓，將高於施加於第5 9 06067twfl.doc/006 修正日期92.6.10 至21片晶圓上之電壓，相差的電壓値約爲1至5伏特。 使用的電壓値則依據實際的狀況作調整，比如進行電 鍍時沈積匣中可能未裝滿晶圓，此時沈積匣上部與底部均 未放置晶圓，由於電鍍之晶圓數量較少，且較集中，因此 上下晶圓與中間晶圓之電壓差則可較放滿晶圓的狀態所採 用的電壓差小。 本發明提供一種電鍍裝置，沈積匣可以同時容納一個 批次的晶圓，因此可以一次進行一批次晶圓的金屬電鍍， 相較於習知一次僅可進行一片晶圓的電鍍，本發明提供之 電鍍裝置可以大幅提高產能。 此外’本發明提供之電鑛裝置在沈積匣與金屬片之周 圍放置音波震盪器，使電鍍液中的金屬離子可以均勻分 布’以增加沈積於晶圓上金屬之均勻度，對於提昇沈積金 屬的品質有很大的助益。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明’任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範Η當視後附之申請專利範圍所界定者爲準。1225111 06067twfl.doc / 006 Revision date 92.6.10 发明 Description of the invention: The present invention relates to an electroplating device, and in particular to an electroplating device for copper damascene applied to semiconductors. When the integration degree of the integrated circuit is increased, so that the surface of the wafer cannot provide sufficient area, and the necessary interconnects have been made, in order to cooperate with the shrinking of metal oxide semiconductor transistors, it is necessary to increase the strength of the mouth. With the need for interconnects, multiple metallization processes have gradually become the approach adopted by many integrated circuit components. For the later stage of semiconductor device manufacturing process, as the width of metal line decreases, the current density of the metal line gradually increases. Traditionally, metal wires formed mainly of brocade metal suffer from the effects of electromigration (EM), which in turn reduces the reliability of the device. And as the width of the metal wire is shrinking, the resistance of the metal wire will be higher and higher. In order to solve the above-mentioned problems encountered when semiconductor devices enter deep sub-micron processes, the use of copper metal with extremely small electromigration and low resistance has become a consistent choice for all semiconductor device manufacturers. Applying metal copper to the process of metal interconnects can provide countless advantages, because copper has the advantages of low resistance, high melting point, and high resistance to electromigration (EM resistance); and copper interconnect circuits It can improve the operating speed of the chip. Compared with aluminum, copper interconnects can provide about twice the operating speed. 'Using a metal damascene process to form the structure of copper interconnects can not only reduce the RC delay time, but also reduce The electrostatic capacitance between the interconnects. Therefore, in order to improve the component accumulation degree and the component conduction speed 4 06667twfl.doc / 〇〇6 revision date 92.6.10 degrees, the use of copper metal to form the structure of metal interconnects has become a trend. However, copper metal itself has the characteristics that it cannot be easily etched by general etching gas. Therefore, the production of copper metal wires can no longer be completed by the traditional manufacturing method, so a metal inlaying process is proposed to solve this problem. The metal damascene method is a method in which a metal interconnect is first etched in a dielectric layer, and then metal is used as the interconnect. This method can meet the requirements for the interconnects produced in the remanufacturing process. It has the requirements of high reliability and high yield. Therefore, this method has become the best choice for the manufacturing method of interconnects in sub-quarter micron. When making copper metal interconnects, physical vapor deposition is first used to cover a thin, conformal copper metal seed layer on an open-hole via, and a copper metal layer is formed by electroplating. A chemical mechanical honing method is used to remove a copper metal layer which is filled outside the opening to rise above the dielectric layer. Because the texture of metallic copper is soft and the distribution of the copper metal layer formed by the conventional electroplating method is relatively uneven, it is easy to cause problems such as depressions and poor surface uniformity during chemical mechanical honing. In addition, it is known that when plating a copper metal layer, only one wafer is placed at a time in the electroplating device, so it takes a long time to produce the entire batch of wafers. Not only cannot the throughput of the entire process be increased, but the production will be relatively increased. the cost of. In view of this, the present invention provides an electroplating device. When the copper metal layer is electroplated, batch deposition is used instead of the single-chip deposition method. The number of wafers per batch is 25, so the production capacity of the process can be greatly increased. . 06067twfl.doc / 006 Revised 92.6.10 The electroplating device provided by the present invention includes at least one deposition box (casette) placed in the cathode of the electroplating tank, copper sheet or copper rod placed in the anode of the electroplating chamber. The electroplating room can hold 25 wafers, and two ends of each wafer are respectively fixed by wafer clamps. The wafer clamps are connected to the cathode and make electrical contact with the wafers; and copper rods connected to the anodes Or the copper piece can be a large piece, placed outside the opening of the deposition box, or it can be composed of 25 small copper pieces arranged in a comb shape, staggeredly extending into the gaps between the wafers. During electroplating, because the wafer located in the center of the deposition box will be electrically affected by adjacent wafers, the deposition effect will be better than the wafers distributed above and below the deposition box. In order to make the deposition effect of each wafer It can be consistent. Therefore, a larger voltage must be applied to the 1 to 4 wafers located above and below the deposition cassette, and the voltage is about 1 to 5 volts compared to the voltage applied to the central wafer. In addition, in order to improve the uniformity of copper metal deposition, the present invention further adds a sonic oscillator to the bottom and both sides of the plating tank to provide ultrasonic vibration while plating, so that the copper metal layer deposited on the wafer has a relatively Good uniformity. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: FIG. 1 shows A schematic view of a plating device according to a preferred embodiment of the present invention; Figures 2A and 2B are a top view and a side view of the plating device shown in Figure 1 respectively; 1225111 06067twfl.doc / 006 date of revision 92.6. 10 FIGS. 3A and 3B are a top view and a side view, respectively, of a detailed description of the deposition box shown in FIG. 1; and FIG. 4 shows a device using a metal sheet as a metal plating source in the electroplating device of the present invention Schematic diagram. Description of icons: 100 plating device 102 plating tank 104, 104a, 104b deposition box 106 metal sheet or metal block 106a metal plate 108a, 108b, 108c sonic oscillator 200 wafer boat 202 robotic arm 206a, 206b For an example of a batch of wafers 208, wafers 210, holding clips 212, and cathode electrodes, please refer to FIG. 1, which is a schematic diagram of a plating device according to a preferred embodiment of the present invention. Shown in the figure is a plating apparatus 100 provided by the present invention, which includes an electric ore tank 102, a deposition box 104, a metal sheet or a metal block 106, and a sonic oscillator 108a, 108b, 108c that can provide sonic vibration. . Among them, the deposition box 104 is gate-shaped, and is used to place gold to be deposited 06067twf 1. doc / 006 Amendment date 92.6.10 A layered wafer (not shown), each wafer is electrically connected to the cathode electrode respectively ' The plating solution contains the same metal ions as the metal to be plated. In the embodiment provided by the present invention, the deposition cassette 104 can simultaneously place a batch of wafers, that is, 25 wafers. Compared to the conventional method, only one wafer can be deposited at a time, which helps More than increase productivity. The metal sheet or metal block 106 is electrically connected to the anode, and can dissociate the copper ions lost in the supplemental plating solution during the plating deposition. The metal sheet or metal block 106 is placed on the side of the opening of the deposition box 104; and the sonic oscillator 108a, 108b, and 108c are used to improve the uniformity of the ion distribution in the plating solution 'to further improve the uniformity of the metal deposited on the wafer, such as copper, and the metal piece 106 used at this time is copper Flakes or copper blocks, and the & electroplating solution used is an electro-mineral solution containing copper ions. Please refer to FIG. 2A and FIG. 2B, which are respectively a top view and a side view of the first plating device. When electroplating is to be performed, each wafer 208 in the entire batch 206a, 206b is first transferred from a general wafer boat 200 to a deposition cassette 104, and the transfer process is performed by a robotic arm 202. The deposition box 104 further includes a first to a second deposition box 104a and a second deposition box 1 (Mb, each of the deposition boxes 1 () 4a, 104b can accommodate a batch of wafers 206a, 206b. In each wafer _ 208 After they are fixed in the sedimentation boxes 104a, 1 (Mb), the deposition warms "43, 104b" will be transferred to the plating bath 102 filled with the plating solution, and the openings of the deposition boxes 104a, 104b are opposite to the metal sheets (or metal blocks) ( (See Figure 1_). Please refer to Figure 3A and Figure 3B for the deposition box shown in Figure 1 1225111 06067twfl.doc / 006 Detailed description of the revision date 92.6.10 104 and the deposition boxes 104a and 104b in Figure 2 A top view and a side view. In the sunk cassette 104, each wafer 208 is clamped and fixed by a fixing clip 210, and each wafer 208 is electrically connected through the fixing clip 210 and the cathode electrode 212, so the fixing clip The material of 210 must be a conductive material. Figure 4 shows a schematic diagram of a device using a metal sheet as a metal plating source in the plating device of the present invention. Figure. The plating deposition source shown in Figure 1 of the present invention is a metal The block 106 is placed on the side of the opening of the deposition cassette 104, and the hair It is also possible to use a metal plate as a source for electroplating. As shown in FIG. 4, each metal plate 106a extends from the open side of the deposition box 104 to the inside of the deposition box 104, so that the metal plate 106a and the wafer 208 are staggered with each other. Distribution, so that the distance traveled by metal ions can be shortened during electroplating. In the present invention, each deposition box 104a, 104b can accommodate a batch of wafers 208, that is, 25 wafers, each wafer Both are fixed with a fixing clip and electrically connected to the cathode electrode. During electroplating, a voltage is applied to the wafer through the cathode electrode, so that metal ions in the plating solution are deposited on the wafer. There are wafers adjacent to it on the top and bottom of the wafer, so the ability to attract metal ions is higher than the wafers distributed on the top and bottom of the deposition box. In view of this, in order to make the ability of the wafer to attract metal ions close, it is not necessary to The positions of the circles are different. Therefore, the voltage applied to the wafers at the top and bottom of the sunk box is higher than the voltage applied to the wafers in the middle. For example, the wafers are ordered from top to bottom. The 1st to 25th wafers, the voltage applied to the 1st to 4th wafers and the 22-25th wafers will be higher than the voltage applied to the 5th 06067twfl.doc / 006 correction date 92.6.10 to 21st wafers The difference in voltage is about 1 to 5 volts. The voltage used is adjusted according to the actual situation. For example, the deposition box may not be filled with wafers during plating. At this time, the top and bottom of the deposition box are not full. Placing the wafer, because the number of plated wafers is small and concentrated, the voltage difference between the upper and lower wafers and the intermediate wafer can be smaller than the voltage difference used in the full wafer state. The invention provides an electroplating device. The deposition box can accommodate one batch of wafers at the same time, so metal plating of one batch of wafers can be performed at a time. Compared with the conventional method, which can only perform plating of one wafer at a time, the present invention provides The electroplating device can greatly increase the production capacity. In addition, 'the electric mining device provided by the present invention places a sonic oscillator around the sediment box and the metal sheet, so that the metal ions in the plating solution can be evenly distributed' to increase the uniformity of the metal deposited on the wafer, and to improve the Quality helps a lot. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. 'Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.