TWI222699B - Method for manufacturing micro pipe device - Google Patents

Abstract

A method for manufacturing a micro pipe device is provided. A photoresist layer is coated on a substrate with at least one trench. An ultraviolet (UV) irradiates and cures the photoresist layer to make the photoresist layer in the trench arching and becoming hemisphere on a surface of the substrate to form a micro pipe.

Description

1222699 — ~ —.

V. Description of the invention (Technical field to which the U invention belongs: There is a method for manufacturing a micro tube (M i crο P i pe) element, especially aa related to a method using ultraviolet light (U11 ra-vi ο 1 et; UV) method for manufacturing a microtubule element by irradiating a photoresist layer.

In recent years, “the rapid development of integrated circuit (1C) process technology has promoted the vigorous development of micro-electromechanical system (MEMS)” and has accelerated the miniaturization of micro-electromechanical components. Because MEMS have the advantages of high scalability, miniaturization, and batch production capacity, etc. In addition, MEMS are widely used, which can be used not only in the field of optoelectronic technology, but also more applicable. In the field of biotechnology. At present, microtubule components, which have attracted considerable attention, are an important component in microelectromechanical systems. Microtubule elements are suitable for conducting fluids in microelectromechanical systems, or for the task of delivering liquid drugs into cells.

Please refer to FIG. 1. FIG. 1 illustrates a conventional method for manufacturing a microtubule element on a semiconductor substrate. A trench 102 is first formed on the substrate 100. The trench 102 may be V-shaped, V-shaped, or a desired shape. Next, an extremely thin glass plate 104 is adhered and covered on the substrate 100 to complete the required microtubule components. The conventional manufacturing method of the microtube element has the following disadvantages. First, after the glass plate 104 is covered with the substrate 100, subsequent semiconductor processes cannot be implemented on the glass plate 104. Therefore, this method The manufactured microtubule components are not suitable for complex

Page 412222699 V. Description of the invention (2) Micro-electro-mechanical system; Second, the micro-tube components are generally used to transmit fluid. The adhesive layer that adheres the glass plate 104 and the substrate 100 may be corrosive to the fluid or use a section. Looseness after time causes fluid leakage. Therefore, the conventional microtubule components are not suitable for semiconductor processes. A new method for manufacturing microtubule components is proposed in U.S. Patent No. 6,228,744. 'American Business Machines Corporation discloses in this patent that a microtubule component is manufactured on a substrate using a semiconductor process. Please refer to FIG. 2. FIG. 2 is a schematic cross-sectional view of a microtubular element manufactured by a conventional semiconductor process. Provide a substrate (not shown in the figure), form a material layer 200 on the substrate, and form a trench 202 in the material layer 200, and deposit a material layer 204 on the substrate 200 by a chemical vapor deposition process. The conditions of chemical vapor deposition and the aspect ratio of the trench 202 are controlled. The material layer 204 has an overhang 206 to form a cavity 208 in the trench 202. Finally, another material layer 21 is deposited. The manufacturing process of the microtubule element is completed on the material layer 204. ~ Although the manufacturing method of microtubule components disclosed by American International Business Machines Co., Ltd. solves the shortcomings of the conventional microtubule component manufacturing process, the process of microtubule components can be incorporated into the general semiconductor manufacturing process, but there are still many restrictions. . The width of the trench 2 0 2 must be greater than the width. In the embodiment, it is revealed that the trench 2 q 2 has a high yield ^ The width ratio is equal to 2, because the thickness of the material layer 200 is limited ^ Therefore, the size of the microtube element is limited. In addition, even if the thickness of the material layer 2000 is thick enough, the material after such a button is engraved to form a wide groove ^ to form a micro-tube element of a desired size can be a laborious, difficult and costly process. work. ,

V. Description of the Invention (3) ----- In view of this, the simple, fast and unregulated component manufacturing method is the industry's need. ^ Micro-invention suitable for semiconductor process The manufacturing process of the tube element, or the method used is subject to the manufacture of microtubes of the required size for semiconductors. There are 5 process technologies, and the method of manufacturing microtube elements cannot be used on demand. The invention provides-microtubules of the required size can be manufactured according to demand: and the body is one of the purposes of the Fangfa is to provide-a kind of microtubule components that are not good and cannot be manufactured with semiconductors; The degree of combination is not another object of the present invention. Θ m & 丄 ^ is a photoresist layer on the substrate; == 管 = 时 '其

; Bull: make the photoresist layer lift up: form step red step, and easy to implement. A further purpose of reading Yiyi is to provide a method for manufacturing a microtubule element, which is required: the microtubule step processing of the photoresist layer 'can depend on the aspect ratio of the channel. The system is not limited to the above-mentioned grooves on the substrate. The present invention further provides a system of microtubular elements: forming the substrate includes the following steps: first providing a substrate, and then forming the substrate into > ditch. Then form a photosensitive layer, such as a photoresist layer, covering 1222699. 5. Description of the invention (4) The thickness of the layer covered on the above substrate will be greater than the thickness of the photoresist layer on the substrate. Table tube components. In addition, a trench can be formed here. The formation of the sensitive layer on the substrate and the bottom surface of the trench is further formed, and the post-processing can be separated and arched by, for example, 'ultraviolet light treatment'. Therefore, the micro-tube element junction layer, such as a photoresist layer, can be formed. The material of the substrate was tested except the semi-materials of the present invention. The upper layer and the inner surface of the trench can be treated with a sensing layer, and the post-processing can be, for example, 'the thickness of the trench. Then, a radiation beam is used for external light treatment, and the surface is separated to be arched to form an arc-shaped junction. A material and a sensitive layer are formed on the bottom, for example, the thickness in the trench. Next, the method is a radiation treatment step, so that the arc structure in the trench is formed to form a structure on the substrate. A protrusion on the substrate is located in the substrate or outside the conductor material. The provided method is quite applicable in component application. Layer, and then the photoresist layer. The thickness of the photoresist step or an energy photoresist layer covered with the energy-sensing layer will interact with the micro-organic element. A recessed structure is combined with all the other insulations on the substrate to form a micro-wide, using the feeling in the upper channel, the above processing steps or the photo-structuring in the channel to form a micro-material layer in the above-mentioned degree will be done in the above degree. Larger than the base layer, a post-excitation step is performed, as defined by the surface of the substrate and the energy sensation. When the material of the material layer and the conductor tube element. The implementation method is also relatively elegant: V. Description of the invention (5) The present invention discloses a manufacturing method of a two-headed cow at the opening and closing point, which is a photoresist on the substrate. Layer 3 = "above the bottom. Utilizing ultraviolet light to irradiate the free-standing system; 2: easy; implementation can be combined with semiconductor processes, or can be avoided, can be shown πτ magic & In order to make the description of the present invention more detailed and Please refer to Figs. 3 to 5 and Fig. 3 to Fig. 5. The potential course of the microtubule element is called ^ Gu Qi, which shows a preferred embodiment of the present invention at the bottom 3ηη μ ' σ diagram. The production of the microtubule element of the present invention firstly covers the auxiliary material layer 302 by, for example, a deposition method, and the material of the base f0G in A may be a semiconductor material, such as a button i) and a πηΙ edge. Glass and conductor materials, etc., and auxiliary materials: Ren Yin: The second person is selected from the group consisting of dielectric materials, metal materials, metal oxides, and gold. Shadow and miracle = material layer 302 is not limited to one layer. Next, use the example material; Auxiliary material layer 302 'Trenches are formed by removing auxiliary parts, exposing the surface of the substrate, which is not shown in Fig. 3', where 'the depth of the trench 30 is between 丨 micrometer and 20 micro-production', and can be J micrometer to chipping The depth and width of the micrometer, #, and the groove 4 are determined according to the requirements, and are not limited to this. = 304 After the formation, 'the photosensitive layer is formed by, for example, spin coating (_CQating),' such as the photoresist layer 306 covers the surface of the substrate 300 exposed by the trench 300 and the auxiliary material layer 300. The material of the photoresist layer 300 may include, for example, Ethyl Lactate or Acetate ) 'As shown in Figure 4. yi 1222699 V. After the description of the invention (6)' The photoresist layer is treated by, for example, ultraviolet light irradiation, and the photoresist layer 3 06 will be decomposed to generate a gas point to generate the workshop 310, and then On the substrate 300: Yes, the structure is shown in Figure 5 ..., the wavelength of the ultraviolet light is interposed:... Η: to 350 nm, and the intensity of the ultraviolet light is 50 to ⑸mJ. The ^ step is divided into two points () 2). In addition, the photoresist layer 306 is exposed to ultraviolet light. It is between 15 and 25, and the duration of the three-shot process step is preferably controlled between M minutes and cJ U minutes. It can be implemented on the substrate and formed directly on the substrate The trench f continues to form a microtubule element by a process described later, and an electron microscope photograph of the microtubule element according to the manufacturing method provided in the present invention is shown in FIG. 6. In FIG. 6, the substrate 400 and the trench can be seen. The photoresist layer, the photoresist layer, the fox-shaped structure 6 and the space 408, #, the space 408 is the second part of the channel in the microtubule element. Therefore, a microtubule element structure can be obtained through the above process. The microtubule element structure is a concave structure on the substrate 400, such as a 402 and a sensing layer on the substrate 400, such as a convex structure on the photoresist layer 400, such as an arc structure 406. Combined. The trench 40 and the arc-shaped structure 406 form a tube wall of the microtubule element structure, and the space 408 surrounded by the trench 40 and the arc-shaped structure 406 is a channel portion in the microtubule element. The present invention can also be implemented on a semiconductor substrate or an indium tin oxide glass substrate that already has a device structure, and a microtubular device is formed according to the aforementioned process. this invention

1222699 V. Description of the invention (7) It can be used after the part, and after the arc, it can be controlled by the part. However, to adjust, it is not because of the ultraviolet irradiation process of the present invention. Therefore, another process of the present invention may require an extra-manufactured, very small microtubule element. The above-mentioned manufacturing method of the present invention is limited to one of the above advantages, that is, the advantages are greatly reduced, the manufacturing process is simplified, and the microtubule components have been hardened. The manufacturing process continues to limit the related manufacturing process. The point is that the photoresist layer can be made less process steps because the present invention is easy to implement early. According to the requirements, the micro-tubes can be formed according to the aforementioned method. Deposition of another layer of material layer 2 micro-organic elements to form a multi-layer layer can be performed according to actual process requirements. The present invention only needs to arch the photoresist layer into an arc shape. Additional system is needed to achieve the purpose of simplifying the process. It is clear that when manufacturing microtubule components, not only can microtubules with dimensions other than the required dimensions be obtained. As will be understood by those skilled in the art, the above description is only a preferred embodiment of the present invention and is not intended to be used. To limit the scope of patent application of the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention should be included in the scope of patent application described below.

Page 10 1222699 Schematic illustration of the preferred embodiment of the present invention has been described in more detail in the preceding description with the following figures, where: Figure 1 shows the conventional manufacturing of microtubule components on a semiconductor substrate FIG. 2 is a schematic cross-sectional view of a microtubular element manufactured by a conventional semiconductor process; and FIGS. 3 to 5 are schematic views illustrating a microtubule element manufacturing process according to a preferred embodiment of the present invention. Sectional view. Fig. 6 is an electron micrograph of a microtubule element completed by the manufacturing method provided by the present invention. Description of graphical symbols: 100, 2 0 0, 3 0 0: base 102: groove 10 4: glass plate 2 0 2, 3 0 4: trench 2 0 4, 2 1 0: material layer 2 0 6: overhang 2 0 8: cavity 3 0 2: auxiliary material layers 306, 306a, 306b: photoresist layer 3 0 8: arc structure 3 1 0: space

Claims (1)

1222699 VI. Application for patent scope 1. A method for manufacturing micro-ordinary parts suitable for a substrate, the method at least includes: forming an auxiliary material layer on the substrate; forming a trench in the auxiliary material layer Open> The sensing layer covers the auxiliary material layer and the trench; and a light shot processing step is performed, so that the sensing layer located in the trench is arched to form an arc structure. 2. The method for manufacturing a microtubule element according to item 1 of the scope of patent application, wherein the material of the substrate is a semiconductor material, an insulating material, and a conductor material. 3. The method for manufacturing a microtubule element according to item 2 of the scope of patent application, wherein the semiconductor material may be silicon or a III-V group element. 4. The method for manufacturing a microtubule element according to item 1 of the scope of the patent application, wherein the material of the auxiliary material layer is selected from the group consisting of a dielectric material, a metal material, a metal oxide, and any combination thereof. 5. The method for manufacturing a microtube element according to item 1 of the scope of patent application, wherein the sensitive layer is a photoresist layer. 6. The manufacturing method of the microtubule element according to item 1 of the scope of the patent application, wherein the material of the sensitive layer is selected from the group consisting of ethyl lactate (Ethyl Lactate) and Page 1212222 6. Scope of patent application ^ Group n-Butyl Acetate ~ Group 7 · When manufacturing the microtubule element as described in the scope of patent application No. 1 when performing the radiation treatment step, more At least includes the use of a method, in which% external light. 8 · Manufacture of microtubule components as described in item 7 of the scope of patent application The intensity of the ultraviolet light is between about 50 ~ 150m J / cm1 2. Absolute method, wherein 9. The manufacturing of the microtubule element according to item 7 of the scope of the patent application. The wavelength of the ultraviolet light is between 100 nm and 350 nm. & method, wherein 10. When the radiation treatment step is performed in the production of the microtubule element described in item 1 of the patent application scope, it further includes at least a control method, which is between 150 ° C and 250 ° C. The application method of temperature and temperature, and the processing time of the method 11 · When the radiation processing step is performed in the manufacturing of the microtubule element described in item 1 of the patent application scope, it further includes at least control-between 10 minutes and 30 minutes. 12. The method for manufacturing a microtubule element according to item 1 of the scope of patent application, wherein the depth of the trench is at least about 1 micrometer to 10 micrometers. Page 13 1 3. The method for manufacturing a microtubule element according to item 1 of the scope of patent application, wherein the width of the trench is at least between about 5 microns and 100 microns. 1222699 VI. Scope of patent application 1 4. The manufacturing method of the microtubule element described in item 1 of the scope of patent application, wherein the substrate may have at least one completed element. 1 5. The method for manufacturing a microtubule element according to item 1 of the scope of patent application, wherein the element may be a microtubule element. 16. A method for manufacturing a micro pipe element, which is applicable to a substrate, the method includes at least: forming a trench in the substrate; forming a sensible layer covering the substrate and the trench; and An energy-excitation step is performed, so that the energy-sensing layer located in the trench is arched to form an arc structure. 1 7. The method for manufacturing a microtubule element as described in item 16 of the scope of patent application, wherein the material of the substrate is a semiconductor material, an insulating material, and a conductor material. 1 8. The method for manufacturing a microtubule element according to item 17 of the scope of the patent application, wherein the semiconductor material can be silicon or a 111-V group element. 19. The method for manufacturing a microtube element according to item 16 of the scope of patent application, wherein the sensitive layer is a photoresist layer. 2 (K The manufacturing method of the microtubule element described in item 16 of the scope of patent application, which Page 14 1222699 VI. The scope of the patent application The material of the sensory layer is selected from the group consisting of ethyl lactate (Ethyl Lactate) and n-Butyl Acetate. 2 1 · The method for manufacturing a microtubule element according to item 16 of the scope of patent application, wherein the energy excitation step further includes using at least an ultraviolet light. 2 2 · The method for manufacturing a microtubule element according to item 21 of the scope of patent application, wherein the intensity of the ultraviolet light is between about 50 and 150 mJ / cin2. 2 3 · The method for manufacturing a microtubule element according to item 21 of the scope of the patent application, wherein the wavelength of the ultraviolet light is between 100 nm and 350 nm. 24. The method for manufacturing a microtubule element according to item 16 of the scope of patent application, wherein when performing the energy excitation step, it further includes controlling at least a reaction temperature between 150 ° C and 250 ° C. Λ 2 5 · The method for manufacturing a microtubule element as described in item 16 of the scope of patent application, wherein the energy excitation step includes at least controlling a processing time between 10 minutes and 30 minutes. , B; 1 26. The method for manufacturing a microtubule element according to item 16 of the scope of patent application, wherein the depth of the trench is at least about 1 micrometer to 10 micrometers. / ′, 27 · The method for manufacturing a microtubule element according to item 16 of the scope of patent application, 1222699 VI. The scope of the patent application The width of the trench is at least between about 5 microns and 100 microns. 28. A method for manufacturing a micro pipe element, applicable to a substrate, the method includes at least: forming a trench in the substrate; > forming a sensitive layer to cover the substrate and the trench; And-performing a post-processing on the sensitive layer, so that the sensitive layer located in the trench rises to form an arc structure. 29. The method for manufacturing a microtubule element as described in item 28 of the scope of patent application, wherein the material of the substrate is a semiconductor material, an insulating material, and a conductive material. 30. The method for manufacturing a microtubule element as described in item 29 of the scope of the patent application, wherein the semiconductor material may be silicon or a III_V group element. 31. The method for manufacturing a microtube element according to item 28 of the scope of the patent application, wherein the sensitive layer is a photoresist layer. 3 2 · The method for manufacturing a microtubule element as described in item 28 of the scope of the patent application, wherein the material of the sensitive layer is selected from the group consisting of ethyl lactate (Ethyl Lactate), < Jean, and n-butyl acetate. (N ~ gutyl Acetate). 3 3 · The method for manufacturing a microtubule element as described in item 28 of the patent application, wherein the post-processing may be an energy excitation step or a radiation processing step. 16 pages 1222699 — — ---—-One ^ A ', please continue to follow ® ^ ~ 3 4. According to the manufacturing method of the microtubule element described in the scope of patent application No. 28, reviewing the post-processing includes at least one using UV light. /, 3 1 2 · According to the manufacturing method of the microtubule element described in item 34 of the scope of patent application, the intensity of the ultraviolet light is between about 50 and 150 mJ / cm2. 3. 36. The method for manufacturing a microtubule element according to item 34 of the scope of the patent application, wherein the wavelength of the ultraviolet light is between 100 nm and 350 nm. The method of manufacturing a microtubule element according to item 28 of the scope of patent application, wherein the post-processing further includes controlling at least a reaction temperature between 150 ° C and 250 ° C. 38. The method for manufacturing a microtubule element as described in item 28 of the scope of patent application, wherein the post-processing further includes controlling at least a processing time between 10 minutes and 30 minutes. 39. The method for manufacturing a microtubule element according to item 28 of the scope of the patent application, wherein the depth of the trench is at least about 1 micrometer to 10 micrometers. Page 17 10. The method for manufacturing a microtubule element according to item 28 of the scope of the patent application, wherein the width of the trench is at least between about 5 microns and 1000 microns. 1222699 VI. Application scope 41. A micro pipe element structure at least includes: a substrate having a recessed structure; and a sensing layer having a raised structure and covering the substrate, wherein the recessed structure A microtubule element structure is defined with the raised structure. 4 2. The microtubule element structure according to item 41 of the scope of patent application, wherein the material of the substrate is a semiconductor material, an insulating material, and a conductor material. 4 3. The microtubule element structure according to item 42 of the scope of patent application, wherein the semiconductor material may be silicon or a 111-V group element. 44. The microtubule element structure according to item 41 of the scope of patent application, wherein the sensing layer is a photoresist layer. 4 5. The microtubule element structure according to item 41 of the scope of the patent application, wherein the material of the sensing layer is selected from the group consisting of ethyl lactate (Ethyl Lactate) and n-Butyl Acetate One ethnic group. 4 6. The microtubule element structure according to item 41 of the scope of patent application, wherein the depth of the recessed structure is at least between about 1 micrometer and 10 micrometers. 47. The microtubule element structure according to item 41 of the scope of patent application, wherein the width of the recessed structure is at least between about 5 microns and 100 microns. Page 18 1222699 6. Scope of patent application 4 8. The microtubule element structure described in item 41 of the scope of patent application, wherein the recessed structure may be located within the substrate. 49. The microtubule element structure according to item 41 of the patent application scope, wherein the recessed structure can be located in at least one auxiliary material layer on the substrate. 50. The microtubule element structure according to item 49 of the scope of the patent application, wherein the material of the auxiliary material layer is selected from the group consisting of a dielectric material, a metal material, a metal oxide, and any combination thereof. 51. The microtubule element structure according to item 41 of the scope of patent application, wherein the substrate may have at least one element completed. 5 2. The microtubule element structure according to item 51 of the scope of patent application, wherein the element may be a microtubule element. 5 3. The microtubule element structure according to item 41 of the scope of patent application, wherein the recessed structure may be a trench. 5 4. The microtubule element structure according to item 41 of the scope of patent application, wherein the convex structure may be an arc structure. Painting 11 11 1 page 19