TWI222527B - Apparatus and method for inspecting array substrate - Google Patents
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1222527 — 五、發明說明(1) 發明領域 本發明係有關於一種檢查以高讳 及其方法。 n迷運行陣列基板之裝置 發明背景 =圖5所示’-多晶石夕液晶顯示器(間之__陣列基板 八通中配置成包 '含-像素(pixel)部分14和一週邊電路部 二。圖5巾,像素部分14包括複數根沿橫向方向(經度方 )之控制線42a,42b和42i,複數根以觸電式相交叉方式 且舁控制線42a,42b和42i無接觸之信號線44a,4仙和44 j, $及置於每一控制線和信號線相交部分之像素54。像素54 〇括一第一開關元件5〇和一輔助電容器52。相對第一開關 凡件50之各自的終端,一第一終端連接一控制線,一第二 =端連接一信號線,一第三終端連接一輔助電容器52。當 弟:開關元件50係如薄膜電晶體(TFT )之類的三終端元 件日守,第一終端係為一閘極,第二終端係一源極,及第三 終端係一没極。1222527 — V. Description of the invention (1) Field of the invention The present invention relates to a method for inspecting a taboo. Background of the invention of the device for running the array substrate = the polycrystalline stone liquid crystal display shown in FIG. 5 (the __ array substrate is arranged in an eight-way array to include a 'pixel-pixel' portion 14 and a peripheral circuit portion 2 In FIG. 5, the pixel portion 14 includes a plurality of control lines 42a, 42b, and 42i in the lateral direction (longitude side), and a plurality of signal lines 44a that intersect with each other in an electric shock type and have no contact between the control lines 42a, 42b, and 42i. , 4 cents and 44 j, and the pixel 54 placed at the intersection of each control line and signal line. The pixel 54 includes a first switching element 50 and an auxiliary capacitor 52. Compared to the first switch 50, The first terminal is connected to a control line, the second terminal is connected to a signal line, and the third terminal is connected to an auxiliary capacitor 52. Dangdi: The switching element 50 is a thin film transistor (TFT) or the like. The terminal element is day guard, the first terminal is a gate, the second terminal is a source, and the third terminal is an electrode.
週邊電路部分包括一第一驅動器3 8供發送一信號至每 一控制線42a, 42b和42i以開啟第一開關元件50,連接至每 一信號線44a,44b和44 j之第二開關元件46a,46b和46 j,一 第二驅動器40供發送一信號以開啟第二開關元件46a,46b 和46 j。每一信號線44a,44b和44 j經第二開關元件46a,46b 和4 6 j連接至一信號終端3 2。The peripheral circuit part includes a first driver 38 for sending a signal to each control line 42a, 42b and 42i to turn on the first switching element 50, and a second switching element 46a connected to each signal line 44a, 44b, and 44j. 46b, 46j, and a second driver 40 for sending a signal to turn on the second switching elements 46a, 46b, and 46j. Each of the signal lines 44a, 44b, and 44j is connected to a signal terminal 32 through the second switching elements 46a, 46b, and 4 6 j.
第5頁 1222527 五、發明說明(2) 例如,第二開關元件46a,46b和46j係如金屬氧化物半 導體場效應電晶體(FET )之類的三終端元件。第一驅動 态38和第二驅動器4〇係為移位寄存器(shift register)。 一般而言,要進行諸如輔助電容器52和第一開關元件 5 0之充電特性和保持屬性,及每一配線短路和斷路電路之 :的缺陷性檢測。檢測裝置(測試電 接至如圖5所示陣列基板12以進行檢測。 ^ =裝置60包括一寫入電則 一辅助電容器52,—續# f _ 冩入彳a唬至母 助電容器52内的電y °、,路2〇由寫入信號讀取堆積在輔 號至第-驅動器38以二路24供發送-計時信 信號至第二驅動器4 一 士 1^日守電路2 2供發送一計時 之驅動終端36。第二士 & %電路24連接至第一驅動器 終端34。此外,_ ^ δ ^電路22連接至第二驅動器之驅動 -開關26和—第二二入電路16和-讀取電路20各自經一第 1.126 弋如MOSFET管之類的開關元件。 現在,對檢測Page 5 1222527 5. Description of the invention (2) For example, the second switching elements 46a, 46b, and 46j are three-terminal elements such as metal oxide semiconductor field effect transistors (FETs). The first driving state 38 and the second driver 40 are shift registers. In general, detection of defects such as charging characteristics and holding properties of the auxiliary capacitor 52 and the first switching element 50, and short circuit and open circuit of each wiring are performed. Detection device (test is electrically connected to the array substrate 12 as shown in FIG. 5 for detection. ^ = The device 60 includes a write capacitor and an auxiliary capacitor 52, — continued # f _ 冩 入 彳 a 唬 到 female auxiliary capacitor 52 The electric power y °, the way 20 is read from the write signal and is stacked on the auxiliary number to the-driver 38 to send two-way 24-the timing signal signal to the second drive 4 one 1 1 day guard circuit 2 2 for sending A timing driver terminal 36. The second driver &% circuit 24 is connected to the first driver terminal 34. In addition, the _ ^ δ ^ circuit 22 is connected to the driver-switch 26 and the second binary circuit 16 and -The read circuits 20 each have a switching element such as a MOSFET tube.
Vd用開啟檢测裝置6〇 下解釋。-寫信號 於信號終端32。第 弟開關26的方式自寫電路16耠入 «η 至第-驅動器4〇。脈衝信號—輸入,第 1222527 五、發明說明(3) 二驅動器4 0就輸入高平信號至第二開關元件4 6 a以開啟開 關元件46a。 此外,第一計時電路2 4產生一脈衝信號以輸入信號至 第一驅動器3 8。屬於第一控制線4 2 a之第一開關元件5 0係 以輸入一高平信號至第一控制線4 2 a的方式啟動。 如上文所述,屬於第一控制線4 2 a之第一開關元件5 0 和第二開關元件46a啟動,接著一寫入信號輸入至輔助電 容5 2以寫入(儲存)電荷。 當第二開關元件46a開啟,第一驅動器38依次輸入一 高平信號至控制線42b和421,脈衝信號持續從第一計時電 路中產生,,這樣就能連續寫入電荷至輔助電容器5 2。 電荷寫入屬於第一信號線44a之像素54内輔助電容器 52後,第一開關26關閉,第二開關30開啟。同時,第一信 號線4 4 a上保持南平信號。脈衝信號持續從第一計時電路 24中產生以輸入至第一驅動器38。第一驅動器38各自以高 平信號依次輸入至控制線42a,42b和42i。如此,第一開關 元件5 0依次開啟,寫入至輔助電容器5 2之電荷由讀取電路 2 0連續讀出。 第一信號線44a之像素54内的輔助電容器52之檢測由Vd is explained below with the opening detection device 60. -Write signal to signal terminal 32. The mode of the second switch 26 is entered from the writing circuit 16 to «η to the-driver 40. Pulse signal—input, No. 1222527 V. Description of the invention (3) The second driver 40 inputs a high level signal to the second switching element 46a to turn on the switching element 46a. In addition, the first timing circuit 24 generates a pulse signal to input the signal to the first driver 38. The first switching element 5 0 belonging to the first control line 4 2 a is activated by inputting a high level signal to the first control line 4 2 a. As described above, the first switching element 50 and the second switching element 46a belonging to the first control line 4 2 a are activated, and then a write signal is input to the auxiliary capacitor 52 to write (store) the electric charge. When the second switching element 46a is turned on, the first driver 38 sequentially inputs a high level signal to the control lines 42b and 421, and a pulse signal is continuously generated from the first timing circuit, so that the charges can be continuously written to the auxiliary capacitor 52. After the electric charge is written into the auxiliary capacitor 52 in the pixel 54 belonging to the first signal line 44a, the first switch 26 is turned off and the second switch 30 is turned on. At the same time, Nanping signal is maintained on the first signal line 4 4 a. A pulse signal is continuously generated from the first timing circuit 24 to be input to the first driver 38. The first drivers 38 are sequentially input to the control lines 42a, 42b, and 42i as high-level signals. In this way, the first switching element 50 is sequentially turned on, and the electric charges written in the auxiliary capacitor 52 are continuously read out by the reading circuit 20. The detection of the auxiliary capacitor 52 in the pixel 54 of the first signal line 44a is performed by
第7頁 izzzyz/ 五、發明說明(4) 以上的程式完成。 路22輸入脈衝至%上面的過程完成後,以自第二計時電 號線44b之像素54 一驅^動器40且重復以上過程進行第二信 屬於信號線之像夸電容器5 2之檢測。更具體而言,完成 計時電路22輸入r ^内輔助電容器52檢測後,每次自第二 信號線之像‘54二2於第二驅動器40内,便進行一次屬於 的輔助電容器52之檢測。 假疋,電荷寫入立 大約為3〇 Μ(微和、、母:輔助電容器52 (寫時間)所需時間 膠結電容所碟定^日士際上’由導線阻抗和測試系統之 之寫入時間内㈣咖要考慮進輔助電容器52 數RCtester確n :宜貫際的寫入時間由再加上這個時間常 喝取寫入至辅助電容器52之電荷所需時間 成’”、”、、# s ’近似於寫入時間,但讀時間除寫時間外, 退要再加上時間常數Rctester確定。 在‘知衣&的非晶體矽LCD之陣列基板内,每一信號 接線端32可以平行連接檢測設備6〇,由於所有的信號線 44a^ 4 4b和44 j如所需各自有一信號接線端32。置入第二驅 動器40 (移位寄存器)之多晶矽1(:1)之陣列基板12並不是 在所有信號線44a,44b和44j上有信號終端32之構造,這樣 色生土1連接檢夠設備6 0上有不利之處,導致需老7^^—的 檢測時g 〇 r:=x 本發明之目的係提供檢查以高速運行陣列基板之裝置Page 7 izzzyz / 5. Description of the invention (4) The above procedures are completed. After the process of inputting the pulse to% from the circuit 22 is completed, the pixel 54 of the second timing signal line 44b, a driver 40, and the above process are repeated to perform the second signal detection of the image capacitor 52 belonging to the signal line. More specifically, after the detection of the auxiliary capacitor 52 in the input r ^ of the timing circuit 22 is completed, the detection of the auxiliary capacitor 52 belonging to the second driver 40 is performed every time from the image ′54 of the second signal line in the second driver 40. Assuming that the charge is written to about 30 megawatts (micro-, and mother: auxiliary capacitor 52 (write time), the time required for cementing the capacitor is determined by the impedance of the wire and the test system. RCtester must be taken into account in the auxiliary capacitor 52 within the time: the appropriate writing time is calculated by adding the time required to often charge the electric charge written in the auxiliary capacitor 52 to this "", ",, # s' is similar to the writing time, but the reading time is determined by adding the time constant Rctester in addition to the writing time. In the array substrate of the "Chiyi" amorphous silicon LCD, each signal terminal 32 can be parallel Connection detection device 60, since all signal lines 44a ^ 4 4b and 44j each have a signal terminal 32 as required. An array substrate 12 of polycrystalline silicon 1 (: 1) placed in a second driver 40 (shift register) The structure of the signal terminal 32 is not provided on all the signal lines 44a, 44b, and 44j. In this way, there is a disadvantage in the connection of the colored soil 1 to the sufficient detection device 60, resulting in the need for detection of the old 7 ^^ — = x The object of the present invention is to provide a method for inspecting an array substrate operating at high speed. Device
第8頁 1222527 五、發明說明(5) 及其方法。 發明概述 本發明供檢查陣列基板之裝置包括:一裝置供寫入電 荷至預設信號線之寄生電容器;一裝置供藉由專換寫入預 設信號線之寄生電容器内的電荷,寫入電荷至與所選控制 線有關之像素單元内的電容器;一裝置供於寫入電荷至像 素内相應電容器後,清除存儲在信號線寄生電容器内的電 荷;一裝置供藉由轉換寫入電容器内的電荷至信號線,寫 入電荷至信號線之配線電容;以及一裝置供檢測寫入信號 線之寄生電容器内的電荷。 _ 本發明提供檢查陣列基板之方法包含的步驟有:寫入 電荷至預設信號線之寄生電容器内;藉由轉換寫入預設信 號線之寄生電容器内的電荷至像素之電容器,寫入電荷至 與所選控制線有關之像素單元内的電容器内;清除留存在 信號線之寄生電容器内的電荷,措由轉換寫入電容之電 荷至信號線,寫入電荷至信號線之寄生電容器;以及讀取 寫入信號線之寄生電容器内的電荷。 根據本發明,以習知技術所不採用的方式寫入電荷至 輔助電容器,使用信號線寄生之電容器讀取存儲在輔助電 容器内的電荷,能在較短的時間内完成檢測陣列基板。如 此能在短時間内檢測複數個陣列基板。Page 8 1222527 V. Description of the invention (5) and its method. SUMMARY OF THE INVENTION The device for inspecting an array substrate of the present invention includes: a device for writing a charge to a parasitic capacitor of a preset signal line; and a device for writing a charge by exclusively replacing the charge in a parasitic capacitor written to a preset signal line To the capacitor in the pixel unit associated with the selected control line; a device for writing the charge to the corresponding capacitor in the pixel to clear the charge stored in the parasitic capacitor of the signal line; a device for converting the A charge to the signal line, a wiring capacitance to write the charge to the signal line; and a device for detecting the charge in the parasitic capacitor written to the signal line. _ The method for inspecting an array substrate provided by the present invention includes the steps of: writing a charge into a parasitic capacitor of a preset signal line; and writing a charge by converting the charge written in the parasitic capacitor of the preset signal line to a capacitor of a pixel To the capacitor in the pixel unit associated with the selected control line; to remove the charge in the parasitic capacitor remaining in the signal line, and to convert the charge written into the capacitor to the signal line and write the charge to the parasitic capacitor in the signal line; and Read the charge in the parasitic capacitor written to the signal line. According to the present invention, the charge is written to the auxiliary capacitor in a manner not used in the conventional technique, and the capacitor stored in the auxiliary capacitor is used to read the charge stored in the auxiliary capacitor using a signal line parasitic capacitor, which can complete the detection of the array substrate in a short time. This makes it possible to inspect a plurality of array substrates in a short time.
12225271222527
發明之詳細說明 —根據本發明供檢測高速陣列基板之裝置及其方法之較 仏貝%例,以下係將附圖加以詳細論述。 〜,:二圖、1所不’要檢測之陣列基板係一多晶體液晶顯示 σσ 且包括一像素部分1 4和一週邊電路部分。像素 部分14包括複數個控制線423,4213和421,複數個 線、 44a,44b和44 j以觸電式交又但並無接觸控制線42/42\和 4 2 1,+以及一像素5 4,此像素5 4置於控制線與信號線之間 的相父。卩分。像素5 4包括一第一開關元件5 〇和一輔助電容 器52。在第一開關元件5〇之每一終端,第—終端(控制端 )連,一控制線,第二終端(第一載流端)連接一信號 、、東第—接線端(第一載流端)連接輔助電容哭$ 2。當開 關元件5〇為三終端元件,第一終端即為一 =:5第2二 即為一源極,以及第三終端即為一汲極。Detailed description of the invention—Comparative examples of the device and method for detecting a high-speed array substrate according to the present invention are described in detail below with reference to the accompanying drawings. ~ :: The two substrates and the array substrate to be detected are a polycrystalline liquid crystal display σσ and include a pixel portion 14 and a peripheral circuit portion. The pixel portion 14 includes a plurality of control lines 423, 4213, and 421. The plurality of lines, 44a, 44b, and 44j are electrically contacted but do not touch the control lines 42/42 \ and 4 2 1, +, and a pixel 5 4 This pixel 54 is placed in the phase parent between the control line and the signal line.卩 分. The pixel 54 includes a first switching element 50 and an auxiliary capacitor 52. At each terminal of the first switching element 50, the first terminal (control terminal) is connected, a control line, the second terminal (first current carrying terminal) is connected to a signal, and the first terminal (the first current carrying terminal) is connected. End) Connect the auxiliary capacitor to cry $ 2. When the switching element 50 is a three-terminal element, the first terminal is a == 5, the second is a source, and the third terminal is a drain.
週邊設備部分包括一第一驅動器38,供發送一信號至 每一,制線42a,42b和42i,以開啟第一開關元件5〇°/連 接至每一信號線44a,44b和44 j之第二開關元件46a,46b和 4 6 j,一第二驅動器4 〇供發送一信號以開啟第二開關元件 4 6a,4 6b和46 j。信號線44a,44b和44 j分別經開關元件46a, 46b和46j連接至信號端32。第一驅動器38和第二驅動器4〇 係分別連接至第一驅動器端3 6和第二驅動器端3 4。The peripheral device part includes a first driver 38 for sending a signal to each of the lines 42a, 42b and 42i to turn on the first switching element 50 ° / connected to each of the signal lines 44a, 44b and 44j. Two switching elements 46a, 46b, and 4 6 j, and a second driver 40 for sending a signal to turn on the second switching elements 46a, 46b, and 46j. The signal lines 44a, 44b, and 44j are connected to the signal terminal 32 via the switching elements 46a, 46b, and 46j, respectively. The first driver 38 and the second driver 40 are connected to the first driver terminal 36 and the second driver terminal 34, respectively.
第10頁 1222527 五、發明說明(7) 第二開關元件46a,46b和46 j係如MOSFET之三終端元 件。第一驅動器3 8和第二驅動器4 0係移位寄存器(s h i f t register)。 供檢測陣列基板1 2之檢測設備1 〇包括:一寫入電路 1 6,供產生一信號以寫入電荷至信號線之寄生電容器4 8 a 4 8b和48 j,一清除電路,清除留存在信號線之寄生電容器 48a,48b和48j内之電何,一頃取電路2〇,讀取堆積在信號 線電容器48a,48b和48 j之電荷,一第一計時電路24,輸入 一脈衝至第一驅動器38,以及一第二計時電路22,輸入一 脈衝至第二驅動器4 0。Page 10 1222527 V. Description of the invention (7) The second switching elements 46a, 46b, and 46j are three-terminal elements such as MOSFETs. The first driver 38 and the second driver 40 are shift registers. The detection device 10 for detecting the array substrate 12 includes: a writing circuit 16 for parasitic capacitors 4 8 a 4 8b and 48 j for generating a signal to write a charge to the signal line, and a clear circuit to clear the remaining The electric power in the parasitic capacitors 48a, 48b, and 48j of the signal line is taken from the circuit 20, and the electric charges accumulated in the signal line capacitors 48a, 48b, and 48j are read. A driver 38 and a second timing circuit 22 input a pulse to the second driver 40.
此外,寫入電路16,讀取電路2〇和清除電路18係經第 一開關2 6,第二開關3 0和第三開關2 8分別連接至第二開關 元件46a,46b和46 j。第一開關26控制寫入電路16和第二開 關元件4 6 a,4 6 b和4 6 j之間的連接。第二開關3 〇控制讀取電 路20和第二開關元件46a,46b和46 j之間的連接。第三開關 28控制清除電路18和第二開關元件46a,46b和46〗之間的連 接。第一開關2 6,第二開關3 〇和第三開關2 8可以配置成 MOSFET之類的。另外一種可能就是整合分別在寫電路丨6, 讀取電路20和清除電路18内之第—開關26,第二開關3〇和 第二開關2 8。Further, the writing circuit 16, the reading circuit 20, and the erasing circuit 18 are connected to the second switching elements 46a, 46b, and 46j via the first switch 26, the second switch 30, and the third switch 28, respectively. The first switch 26 controls the connection between the writing circuit 16 and the second switching elements 4 6 a, 4 6 b and 4 6 j. The second switch 30 controls the connection between the read circuit 20 and the second switching elements 46a, 46b, and 46j. The third switch 28 controls the connection between the clear circuit 18 and the second switching elements 46a, 46b, and 46. The first switch 26, the second switch 30, and the third switch 28 can be configured as MOSFETs or the like. Another possibility is to integrate the first switch 26, the second switch 30, and the second switch 28 in the write circuit 6, the read circuit 20, and the clear circuit 18, respectively.
1222527 五、發明說明(8) 現就圖2中使用檢測設備檢測陣列基板丨2之方法作一 說明。假定有控制線中之i根,信號線中之〕·根以及各自相 父部分之像素5 4。首先,開啟第一開關2 6,並且寫入電路 1 6與第二開關元件4 6 a,4 6 b和4 6 j相互連接。脈衝信號自第 一計時電路24輸入至第一驅動器38。第一驅動器38輸入供 開啟第一開關元件50之信號至第一控制線42a。屬於第一 控制線42a之第一開關元件50由此信號開啟。 脈衝信號在預設間隔自第二計時電路22輸入至第二驅 動器4 0。脈衝信號一輸入,第二驅動器4 〇輸入一信號以依 次開啟第二開關元件4 6 a,4 6 b和4 6 j。例如,電荷以自寫入 電路16送入一寫信號vd至寄生電容器48a内的方式寫入寄 生電容器48a,由此產生如圖3所示的寫電路16和第一信號 線44a之間的連接。由於第二開關元件46a,46b和46 j依次 開啟,電荷也逐個寫入複數個信號線之寄生電容器 48a,48b 和 48j 内。 當寫入信號線之寄生電容器48a,48b和48 j内的電荷表 示為9_11,寄生電容器48&,481)和48:|之容量表示為(:1^, 以及寫信號電壓表示為Vd,就可得下面的方程式1。當寫入 電荷至電容器48a,48b和48j之所需時間表示為Teffect_sw2, 方矛王式· Te"ect_sw2 —Reffect-sw2 X Cbus 成立如 Reffect-sw2 為 1 〇 k Ω,Cbus 為 1〇〇pF,則Teffe…sw2=l (微秒)。事實上,不 可能忽略量測系統(檢測裝置1 0 )之時間常數RCtestei_,所1222527 V. Description of the invention (8) A method for detecting the array substrate 2 using a detection device in FIG. 2 will now be described. It is assumed that there are i roots in the control line, [] roots in the signal line, and pixels 5 4 in the parent part of each phase. First, the first switch 26 is turned on, and the writing circuit 16 and the second switching elements 4 6 a, 4 6 b, and 4 6 j are connected to each other. A pulse signal is input from the first timing circuit 24 to the first driver 38. The first driver 38 inputs a signal for turning on the first switching element 50 to the first control line 42a. The first switching element 50 belonging to the first control line 42a is turned on by this signal. The pulse signal is input from the second timing circuit 22 to the second driver 40 at a predetermined interval. As soon as a pulse signal is input, a signal is input to the second driver 40 to turn on the second switching elements 4 6 a, 4 6 b, and 4 6 j in sequence. For example, the electric charge is written into the parasitic capacitor 48a in such a manner that a write signal vd is sent from the writing circuit 16 into the parasitic capacitor 48a, thereby generating a voltage between the writing circuit 16 and the first signal line 44a as shown in FIG. connection. Since the second switching elements 46a, 46b, and 46j are sequentially turned on, the charges are also written into the parasitic capacitors 48a, 48b, and 48j of the plurality of signal lines one by one. When the charge in the parasitic capacitors 48a, 48b, and 48j written to the signal line is expressed as 9_11, the capacity of the parasitic capacitors 48 &, 481), and 48: | is expressed as (: 1 ^, and the write signal voltage is expressed as Vd, You can get the following Equation 1. When the time required to write charges to the capacitors 48a, 48b, and 48j is expressed as Teffect_sw2, the square spear king type Te " ect_sw2 —Reffect-sw2 X Cbus is established as Reffect-sw2 is 1 〇k Ω, Cbus is 100pF, then Teffe ... sw2 = 1 (microseconds). In fact, it is impossible to ignore the time constant RCtestei_ of the measurement system (detection device 1 0), so
第12頁 1222527 五、發明說明(9) 以要用到下面的方程式2。Page 12 1222527 V. Description of Invention (9) To use Equation 2 below.
Qbus-wi =C5us x Vd (方程式 1 )Qbus-wi = C5us x Vd (Equation 1)
Teffect-sw2 = Reffect-sw2 X CbliS + RCtester (方程式2 ) 屬於第一控制線4 2 a之第一開關元件5 0開啟,使得寄 生電容器48a和輔助電容器52可以是如圖4所示之包括第一 開關元件之内部電阻5 8的電路。用寫入寄生電容器4 8 a之 電荷,寫入電荷位於第一控制線42a和第一信號線44a之相 交部分像素5 4之輔助電容器5 2内。 雖然在電荷寫入寄生電容器時,控制線開啟,但寫入 寄生電容器之電荷係因第一開關元件之高内部阻抗5 8和輔 助電容器之大常數,而導致無電荷寫入輔助電容器内。當 第二開關元件於電荷寫入至寄生電容器後關閉,此時電路 結構如圖4所示,使得電荷由用作電源之寄生電容器寫入 輔助電容器。 當寄生電容器48a與輔助電容器52兩端之電壓於電荷 寫入輔助電容器52之後為Vd_w2,可得方程式3 °Cs為輔助電 容器52之電容。例如,當寄生電容器48a與輔助電容器52 之電容分別為lOOpF和0· lpF,Cbus X Vd_w2就遠大於 Cs X Vd_w2,這樣使得方程3更相似于方程4。相應地,Vd_w2 近似Vd,於電荷在寫信號電壓為Vd時寫入輔助電容器52的 情況下其幾乎等同。Teffect-sw2 = Reffect-sw2 X CbliS + RCtester (Equation 2) The first switching element 5 0 belonging to the first control line 4 2 a is turned on, so that the parasitic capacitor 48a and the auxiliary capacitor 52 can be included as shown in FIG. A circuit with internal resistance 5 8 of a switching element. The electric charges written in the parasitic capacitor 4 8 a are located in the auxiliary capacitor 5 2 of the pixel 5 4 at the intersection of the first control line 42a and the first signal line 44a. Although the control line is turned on when the electric charge is written into the parasitic capacitor, the electric charge written into the parasitic capacitor is due to the high internal impedance of the first switching element 58 and the large constant of the auxiliary capacitor, so that no electric charge is written into the auxiliary capacitor. When the second switching element is turned off after the charge is written to the parasitic capacitor, the circuit structure at this time is shown in FIG. 4, so that the charge is written into the auxiliary capacitor by the parasitic capacitor used as a power source. When the voltage across the parasitic capacitor 48a and the auxiliary capacitor 52 is Vd_w2 after the electric charge is written into the auxiliary capacitor 52, the equation 3 ° Cs can be obtained as the capacitance of the auxiliary capacitor 52. For example, when the capacitances of the parasitic capacitor 48a and the auxiliary capacitor 52 are 100 pF and 0 · lpF, respectively, Cbus X Vd_w2 is much larger than Cs X Vd_w2, so that Equation 3 is more similar to Equation 4. Correspondingly, Vd_w2 is approximately Vd, which is almost the same when the charge is written into the auxiliary capacitor 52 when the write signal voltage is Vd.
第13頁 1222527 五、發明說明(10)Page 13 1222527 V. Description of the invention (10)
Qbus-wl = Cbus X Vd_w2 + Cs X Vd-w2 (方程式3 )Qbus-wl = Cbus X Vd_w2 + Cs X Vd-w2 (Equation 3)
Qbus-Wl 与 Cbus X Vd_w2 (方程式 4 ) 當第一開關元件50之内部阻抗58表示為Reffect_swl ,寫 入電荷至輔助電容器52所需時間(時間常數)Teffect_swl就 由方程5確定。即當Reffect_swl為30 0M Ω和Cs為0· lpF時,寫入 時間為3 0 /z s。Qbus-Wl and Cbus X Vd_w2 (Equation 4) When the internal impedance 58 of the first switching element 50 is represented as Reffect_swl, the time (time constant) Teffect_swl required to write the charge to the auxiliary capacitor 52 is determined by Equation 5. That is, when Reffect_swl is 30 0 Ω and Cs is 0 · lpF, the write time is 30 / z s.
Tef fect-swl — Reffect-swl X Cs (方程式5 )Tef fect-swl — Reffect-swl X Cs (Equation 5)
即使在連接至第j根信號線44 j之第二開關元件46 j由 開(ON)跳躍至關(OFF)後,第一驅動器38保持輸入開啟第 一開關元件5 0之信號至第一控制線4 2 a。這樣,即使於關 閉連接至第j根信號線44 j之第二開關元件46 j之後,屬於 第一控制線42a之第一開關元件5〇在預設時間内仍保持開 啟狀態。,這預定時間内使用寫入寄生電容器48j内之電 荷寫入電荷至輔助電容器52内。也可以通過設定如方程5 所示之時間寫入電荷至輔助電容器5 2内。Even after the second switching element 46 j connected to the j-th signal line 44 j jumps from ON to OFF, the first driver 38 keeps inputting the signal that turns on the first switching element 50 to the first control Line 4 2 a. Thus, even after the second switching element 46 j connected to the j-th signal line 44 j is turned off, the first switching element 50 belonging to the first control line 42 a remains on for a preset time. In this predetermined time, the charge is written into the auxiliary capacitor 52 using the charge written in the parasitic capacitor 48j. It is also possible to write the charge into the auxiliary capacitor 52 by setting the time as shown in Equation 5.
σ •,一糸=電荷短時間内寫入至寄生電容器4 4 8b和48〕之後’電荷就寫入了輔助電容器52内。由於, 寫入至輔助電容器52内所需的時間比寫入至 48a,48b和48j所需時間要長,所以電荷 ^ 輔助”器52内。從而,本發明完 = 所需時間短于習知方法。 ’八至策今口σ • As soon as the charge is written into the parasitic capacitors 4 4 8b and 48 in a short time], the charge is written into the auxiliary capacitor 52. Since the time required to write to the auxiliary capacitor 52 is longer than the time required to write to 48a, 48b, and 48j, the charge ^ is auxiliary in the auxiliary device 52. Therefore, the completion of the present invention = the time required is shorter than conventional Method. 'Eight to policy Iguchi
$ 14頁 1222527 五、發明說明(11) 留存在寄生電容器48a,48b和48j内的電荷現由清除電 路1 8清除。清除電荷所需時間表示為清除時間。第三開關 2 8開啟以連接清除電路1 §至每一第二開關元件4 6 a,4 6 b和 4 6 j。一脈衝信號在預定間隔内自第二計時電路2 2輸送至 第二驅動器4 0。第二驅動器4 〇依次輸入開啟第二開關元件 46a,46b和46 j之信號。開關元件46 a,46b和46 j依次開啟。 當第二開關元件46a,46b和46 j開啟時,寄生電容器 4 8a,4 8b和48 j經由開關元件46a,46b和46 j連接至清除電路 如上文提及之進行清除以及下面要講述之於讀取儲存 在輔助電容器内電荷後清除寄生電容器之原由茲因電荷不 能被準確檢測到,即當電荷寫入至輔助電容器並讀取存儲 在辅助電容器内的電荷時,由於經電荷寫入至寄生電容器 而有電荷留存在寄生電容器内,使得檢測結果不準確。 清除時間以方程2計算而得。第三開關2 8於連接至第】 根信號線4 4 j之第二開關元件4 6 j由開跳躍至關或同時關 閉。 在完成寫入電射至寄生電容器48a,48b和48j及輔助電 容器52並且清理完留存在寄生電容器48a,48b和48j内的電 荷後’就重復上面所述的過程。重復時,一輸入脈衝信號$ 14 pages 1222527 V. Description of the invention (11) The charge remaining in the parasitic capacitors 48a, 48b and 48j is now cleared by the clear circuit 18. The time required to clear the charge is expressed as the clear time. The third switch 2 8 is turned on to connect the clear circuit 1 § to each of the second switching elements 4 6 a, 4 6 b, and 4 6 j. A pulse signal is transmitted from the second timing circuit 22 to the second driver 40 within a predetermined interval. The second driver 4 sequentially inputs signals for turning on the second switching elements 46a, 46b, and 46j. The switching elements 46a, 46b, and 46j are turned on in sequence. When the second switching elements 46a, 46b, and 46j are turned on, the parasitic capacitors 4 8a, 4 8b, and 48 j are connected to the clearing circuit via the switching elements 46a, 46b, and 46 j to clear as mentioned above and to be described below. The reason for clearing the parasitic capacitor after reading the charge stored in the auxiliary capacitor is that the charge cannot be accurately detected, that is, when the charge is written to the auxiliary capacitor and the charge stored in the auxiliary capacitor is read, the charge is written to the parasitic Capacitors and charges remain in the parasitic capacitor, making the test results inaccurate. The clearing time is calculated by Equation 2. The third switch 28 is connected to the second signal element 4 6 j of the first signal line 4 4 j and jumps from on to off or closes at the same time. The above-described process is repeated after the writing of the radio waves to the parasitic capacitors 48a, 48b, and 48j and the auxiliary capacitor 52 is completed, and the charges remaining in the parasitic capacitors 48a, 48b, and 48j are cleaned. When repeating, one input pulse signal
第15頁 1222527 五、發明說明(12) 自第汁日守電路24輸入至第一驅動器38内,就輸入開啟第 開關70件之信號至與第-控制線42a相鄰之第二控制線 士 一 弟一才工制線4 2 a 〇即,每重復上面的過程 ^輸入開啟第一開關元件之信號的控制線依次轉換。從 而,上面/斤述過程重復控制線之數目,使得以輸入開啟第 開關το件之信號至所有控制線42&,42b和421方式就可以 堆積電荷於所有辅助電容器52内。 夕φ Ϊ =堆積至輔助電容器52後,每一輔助電容器52留存 之電何於經過一所謂”伴存 日# ΡΗέ球* 保存日守間(Retention time)之預設 〇日士項 項取時間,堆積在輔助電容器5 2之電荷 r d~r 1 广1。下面的方程式6確定當輔助電容器52兩極電屡為Page 15 1222527 V. Explanation of the invention (12) From the input of the first day-to-day circuit 24 to the first driver 38, a signal for turning on the 70th switch is input to the second control line adjacent to the-control line 42a Yidiyicai line 4 2 a 〇 That is, every time the above process is repeated ^ the control line that inputs the signal to turn on the first switching element is sequentially switched. Therefore, the number of control lines repeated in the above / mentioned process makes it possible to accumulate charges in all auxiliary capacitors 52 by inputting a signal for turning on the switch το to all control lines 42 & 42b and 421. Evening φ Ϊ = After the accumulation of the auxiliary capacitors 52, how does the electricity retained by each auxiliary capacitor 52 pass through a so-called "associated day # ΡΗέ 球 * Preservation of the Retention time (0 days) item time , The charges rd ~ r 1 wide 1 accumulated in the auxiliary capacitor 5 2 The following Equation 6 determines that when the two poles of the auxiliary capacitor 52 are repeatedly
Qcs-rl =CS X Vd. rl (方程式6 ) =自計時電路24輪入至第一驅動器3 ^入2啟開關元件之信號至第動 屬於弟-控制線42a之第一開關元件5〇。 已開啟 如圖4所示,連接至p M私 電容哭52和俨㈣心 之第一開關元件50之辅助 电夺μ μ和仏號線44a之寄生雷交 堆積在輔助電容器52 /48a +仃連接。從而, 48a。 的電何用於寫入電荷至寄生電容器Qcs-rl = CS X Vd. Rl (Equation 6) = Self-timing circuit 24 turns to the first driver 3 ^ 2 to turn on the signal from the switching element to the first switching element 50 belonging to the control line 42a. As shown in Figure 4, the parasitic lightning current of the auxiliary electric capacitor μ μ connected to the PM capacitor 52 and the first switching element 50 of the heart and the parasitic lightning of the 仏 line 44a is accumulated on the auxiliary capacitor 52 / 48a + 仃connection. Thus, 48a. How to write charge to parasitic capacitors
第16頁 1222527 五、發明說明(13) 如方程式6所示’存儲在輔助電容器5 2内之電荷經開 啟第一開關元件5 0就變成如方程式7所系。Vd-r2為置於寄生 電容器48和輔助電容器50之電壓。方程7式中第一部分為 堆積在寄生電容器4 8 a中的電荷以及第二部分為留存在辅 助電容器5 2内的電荷。例如,輔助電容器5 2和寄生電容器 48a分別為〇·ιρι?和i〇〇pF,且表示式〇^ X Vd-r2运比 ◦s X Vd_r2大得多,如此使得方程式7更近似於方程式8。存 儲在輔助電容器52内的電荷可以轉送至寄生電容器48a 内〇Page 16 1222527 V. Description of the invention (13) As shown in Equation 6, the charge stored in the auxiliary capacitor 52 is turned on as shown in Equation 7 when the first switching element 50 is turned on. Vd-r2 is a voltage placed on the parasitic capacitor 48 and the auxiliary capacitor 50. The first part of the equation 7 is the charge accumulated in the parasitic capacitor 4 8 a and the second part is the charge remaining in the auxiliary capacitor 52. For example, the auxiliary capacitor 52 and the parasitic capacitor 48a are respectively 〇ιιιι and 〇〇〇pF, and the expression 〇 ^ X Vd-r2 is much larger than ◦ X Vd_r2, so that Equation 7 is closer to Equation 8 . The charge stored in the auxiliary capacitor 52 can be transferred to the parasitic capacitor 48a.
Qcs-rl =Cbus X Vd.r2 +CS X Vd Qcs-rl ~ Cbus X Vd_r2 (方程式7 ) (方程式8 )Qcs-rl = Cbus X Vd.r2 + CS X Vd Qcs-rl ~ Cbus X Vd_r2 (Equation 7) (Equation 8)
於轉換存儲在輔助電容器5 2内之電荷至寄生電容器 4 8a之後,更具體地說,係在開啟第一開關元件之信號自 第一驅動器3 8輸入至第一控制線4 2 a之後。並且經一預設 時間後’第二開關3 0開啟以連接讀取電路2 〇和第二開關元 件4 6 a,4 6 b和4 6 j。同時,一脈衝信號在預設時間間隔内自 第二計時電路22輸入至第二驅動器4〇。第二驅動器40輸入 一仏號以依次開啟第二開關元件4 6 a,4 6 b和4 6 j。從而複數 個元件46a,46b和46 j相繼開啟。因開關元件46a,46b和46 j 相繼開啟’讀取電路2 〇就依次連接至寄生電容器4 8 a,4 8 b 和48 j。同時,讀取堆積於寄生電容器48&,48b和48 j之電 荷。寄生電容器48a,48b和48 j電壓的讀出’,取代了電荷之 讀出。After the charge stored in the auxiliary capacitor 52 is converted to the parasitic capacitor 48a, more specifically, after the signal for turning on the first switching element is input from the first driver 38 to the first control line 42a. And after a preset time, the 'second switch 30 is turned on to connect the reading circuit 20 and the second switching elements 46a, 46b and 46j. At the same time, a pulse signal is input from the second timing circuit 22 to the second driver 40 within a preset time interval. The second driver 40 inputs a sign to sequentially turn on the second switching elements 4 6 a, 4 6 b, and 4 6 j. Thus, the plurality of elements 46a, 46b, and 46j are sequentially turned on. Since the switching elements 46a, 46b, and 46j are turned on one after another, the reading circuit 20 is connected to the parasitic capacitors 4 8 a, 4 8 b, and 48 j in this order. At the same time, the charges accumulated on the parasitic capacitors 48 &, 48b, and 48j are read. The reading of the voltage of the parasitic capacitors 48a, 48b and 48j 'replaces the reading of the charge.
第17頁 1222527 五、發明說明(14) 在讀出存儲在寄生電容器4 8 a,4 8 b和4 8 j之電荷後,開 啟第一開關元件之信號停止自第一驅動器38輸入至第一控 制線42a。第二開關30關閉。 工 此後’留存在寄生電容器48a,48b和48 j内的電荷清 除。清除電路1 8經開啟第二開關30連接至開關元件 46 a,46b和46j。一脈衝信號在預設時間間隔内自第二計時 電路22輸入至第二驅動器4〇。第二驅動器4〇輸入_信號以 逐個開啟第二開關元件4 6 a,4 6 b和4 6 j。複數個元件 46a,4 6b和46 j依次開啟並且清除電路18依次連接至寄生電 谷Is 48a,48b和48 j。除了要於電荷寫入至輔助電容器52後 進行清理工作外,留存在電容器48a,48b和48〕·内的電 要清除。 完成讀取存儲於輔助電容器52 儲在寄生電容器48a,48b和48j内的 重復過程中,假使一脈衝信號自第 内的電荷且清 電荷後,重復 一計時電路24 一驅動器38,開啟第一開關元件信號就輸入至第 4 2b,而不是輸入至與控制線42a鄰 了。即,每重復上述的過程,開啟 入的控制線依次替代。同樣,上述 次。藉由開啟第一開關元件之信號 42b和42i,即可讀取存儲於所有輔 接之第一控制 第一開關元件 過程重復控制 輸入至所有控 助電容器52内 此過程。 輸入至第 一控制線 線42a 之信號輸 線之數目 制線42a, 的電荷。 1222527Page 17 1222527 V. Description of the invention (14) After reading the charges stored in the parasitic capacitors 4 8 a, 4 8 b and 4 8 j, the signal to turn on the first switching element stops being input from the first driver 38 to the first Control line 42a. The second switch 30 is turned off. After that, the charges remaining in the parasitic capacitors 48a, 48b, and 48j are cleared. The clear circuit 18 is connected to the switching elements 46a, 46b and 46j by turning on the second switch 30. A pulse signal is input from the second timing circuit 22 to the second driver 40 within a preset time interval. The second driver 40 inputs a signal to turn on the second switching elements 4 6 a, 4 6 b, and 4 6 j one by one. The plurality of elements 46a, 46b and 46j are turned on in sequence and the clear circuit 18 is connected to the parasitic valleys Is 48a, 48b, and 48j in turn. Except for the cleaning work after the electric charges are written to the auxiliary capacitor 52, the electricity remaining in the capacitors 48a, 48b, and 48] must be removed. After completing the repetitive process of reading and storing the auxiliary capacitor 52 and the parasitic capacitors 48a, 48b, and 48j, assuming that a pulse signal is cleared from the first charge, the timer circuit 24 and the driver 38 are repeated to turn on the first switch The component signal is input to the 4th 2b, instead of being input adjacent to the control line 42a. That is, every time the above process is repeated, the control lines that are turned on are replaced in turn. Similarly, the above times. By turning on the signals 42b and 42i of the first switching element, it is possible to read the first control elements stored in all the auxiliary first switching elements. The process repeat control is input to all the control capacitors 52. This process. The number of signal lines input to the first control line line 42a controls the charge of the line 42a. 1222527
堆積且保留在所有辅助電容器5 2内 讀取。當出現輔助電容器52不能讀 〜J上述過程 = 開關元件50可能在充電特性,保 存屬f生,接、.泉之紐路和斷路上有問題。 ’、 從而,陣列基板12於堆積在輔 :寄生電容器48a,48b和叫後,以讀取堆積在 48a,48b和48 j之電荷(或電荷之電壓) _ m 二電:自輔助電容器52轉換至寄生電二 牯,兩個或兩個以上的輔助電容器52同時堆 r^l8?48j ? ^^^8a;48b,〇4sl; 換至辅助電容器52。此設計減少了讀取電荷所需時間。 如=讀取存儲在屬於第i根控制線42i之辅助電容器Μ 内的電荷之後,可省去清除存儲於寄生電容器48a,48b和 4 8 j内的電荷。Piled up and retained in all auxiliary capacitors 5 2 Read. When the auxiliary capacitor 52 cannot be read ~ J The above process = The switching element 50 may be in a charging characteristic, the storage is a failure, and there is a problem with the connection, disconnection, and disconnection. 'Thus, after the array substrate 12 is stacked on the auxiliary: parasitic capacitors 48a, 48b and called, to read the charge (or voltage of the charge) accumulated on 48a, 48b, and 48j _ m Second power: converted from the auxiliary capacitor 52 To the parasitic electric energy, two or more auxiliary capacitors 52 are stacked at the same time r ^ l8? 48j? ^^^ 8a; 48b, 04sl; and switched to the auxiliary capacitor 52. This design reduces the time required to read the charge. For example, after reading the charge stored in the auxiliary capacitor M belonging to the i-th control line 42i, the charge stored in the parasitic capacitors 48a, 48b, and 4 8 j can be omitted.
此外’可藉由劃分基板1 2為複數個區域進行上述整個 過程’檢測出陣列基板i 2之缺陷處。 所作說明係使用的是多晶矽液晶顯示器之陣列基板 4也了用其他的场致發光顯示器(Eiectr〇iuminescence display)之陣列基板。In addition, 'the defects can be detected in the array substrate i 2 by dividing the substrate 12 into a plurality of regions and performing the above-mentioned entire process'. The explanation is based on the use of an array substrate 4 of a polycrystalline silicon liquid crystal display, as well as an array substrate of other electroluminescence displays.
第19頁Page 19
Lzzzyz/Lzzzyz /
如上文已描述了本發明供a、日丨土 法,與習知方法相比,車列基板之裝置及其方 寄生電容器,能在更短的時 Μ刖沒有用過之信號線 W叶間内檢測陣列基板。 罕父佳貫施例說明如上 奉赞明以 發明之實&,並非用以限定本發明,任何孰習:助瞭解本 者’在不脫離本發明之精神何範圍内,者;項技術 與潤飾。 田J f文一許之更動As described above, according to the present invention, the method of the present invention is compared with the conventional method. The device and the parasitic capacitors on the train substrate can shorten the unused signal line W between the leaves in a shorter time. Inside detection array substrate. The example of Han Jiajia's example illustrates that the above inventions are based on the fact of invention & not to limit the invention, any practice: to help understand the scope of the person without departing from the spirit of the invention; Retouch. Tian J f changed slightly
裝置:具ΐΐ;例-供檢查高速陣列基心 ^ ^ 止玉旎更加清楚地闡述特微與精 神。A =,希望能涵蓋各種改變及具相等性的安排於4 發明戶it二,之專利範圍的範壽内,而非以上述所揭露^ 較佳貫本發明之範疇加以限制。因此,本發明戶 申請之專利靶圍的範疇應該根據上述的說明作最寬廣的角 釋,以致使其涵蓋所有可能的改變以及具相等性的安排cApparatus: ΐΐ; Example-for examining the core of high-speed arrays ^ ^ Zhi Yuquan explained the features and spirit more clearly. A =, I hope to cover various changes and equal arrangements in the scope of the patent scope of 4 inventors, it is not limited by the scope of the present invention, which is disclosed above. Therefore, the scope of the patent target filed by the inventor should be explained in the broadest terms according to the above description, so that it covers all possible changes and equal arrangements c
第20頁 1222527Page 20 1222527
圖 為 ΗΗ rr-k 圖。 X之陣列基板和檢查陣列基板之裝置的電路 圖二為本發 圖三為當第The picture shows ΗΗ rr-k. The circuit of the array substrate of X and the device for inspecting the array substrate.
圖五為習知 的電路圖。 明之檢查陣列基板之方 二開關元件開啟時之電 一開關元件開啟時之電 技術之陣列基板和供檢 法的時序圖表。 略圖。 略圖。 查陣列基板之習知裝 置 圖六為習知 方法檢查陣列基板之時序 圖表 圖式 之符 號 說 明 1 0,6 0 檢 查 裝 置 14 像 素 部 分 18 清 除 電 路 22 第 二 計 時 電 路 24 第 —> 計 時 電 路 26 第 一 開 關 30 第 二 開 關 34 第 二 馬區 動 器 端 36 第 一 驅 動 器 端 38 第 — 驅 動 器 42a, 42b, 42c, 42i 控制線 44a,44b,44 j 信號線 12 1620Figure 5 is a conventional circuit diagram. The method of inspecting the array substrate is as follows: 2. The electricity when the switching element is turned on. 1. The electricity technology when the switching element is turned on. Sketch map. Sketch map. The conventional device for checking the array substrate. Figure 6 is a conventional method for checking the timing chart diagram of the array substrate. Symbol description 1 0, 6 0 Inspection device 14 Pixel section 18 Clear circuit 22 Second timing circuit 24th —> Timing circuit 26 First switch 30 Second switch 34 Second horse driver terminal 36 First driver terminal 38th — Drivers 42a, 42b, 42c, 42i Control wires 44a, 44b, 44 j Signal wires 12 1620
40 陣列基板 寫入電路 讀取電路 第三開關 信號終端 第二驅動器40 Array substrate Write circuit Read circuit Third switch Signal terminal Second driver
4 6 a,4 6 b,4 6 j第二開關元件 4 8 a,4 8 b,4 8 j信號線之寄生電容器4 6 a, 4 6 b, 4 6 j 2nd switching element 4 8 a, 4 8 b, 4 8 j Parasitic capacitor of signal line
第21頁 1222527Page 12 1222527
第22頁Page 22
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