TWI222229B - Light emitting device with nanometer core-shell conductive particle - Google Patents

Light emitting device with nanometer core-shell conductive particle Download PDF

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TWI222229B
TWI222229B TW92114425A TW92114425A TWI222229B TW I222229 B TWI222229 B TW I222229B TW 92114425 A TW92114425 A TW 92114425A TW 92114425 A TW92114425 A TW 92114425A TW I222229 B TWI222229 B TW I222229B
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layer
nano
core
light
item
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TW92114425A
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TW200427109A (en
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Min-Hsun Hsieh
Ru-Shi Liu
Hau-Ming Chen
Shu-Fen Hu
Biing-Jye Lee
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Epistar Corp
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Abstract

A light emitting device with nanometer core-shell conductive particle uses the nanometer core-shell conductive particle to solve the conventional problem of poor electric current distribution and penetration rate so that brightness of the light emitting device can be increased.

Description

1222229 五、發明說明(1) 發明技術領域 /道發^係關於—種發光元件,尤其關於—種具有奈米 核被導電粒子之發光元件。 -:番光一六極體之應用頗為廣泛,例如,可應用於光學顯 示、 父通號誌、為料儲存裝置、通訊裝置、昭明穿 置。r提高發光二極體之亮度:、、匕發 光一極體之製造上之重要課題。 先前技術 二=第5,789,768號〔其申請人與本案相同〕 :極】:=顯示之發光二極體構造,此先前技藝發光 雷;hn!在於接觸層15上形成一透明氧化導電層16, 、:m出之電流’在透明氧化導電層16中能夠均勻 1 ΐ 1双ί 透明氧化導電層之穿透率可達85%以上, ίΪ日“3Ϊ向該透明氧化導電層之光能輕易帶出;由 ίίΠ 層之電阻值約在20〜100 Ω/□,在此電阻值 ^十之路/於小尺寸之發光元件尚可行’但是應用於大 尺寸之發光元件時就不適用。 1 ^國專利第5, 563, 422號中揭露一種發光二極體構 ί Φ二在一Ρ型接觸層上以低溫形成一極薄之Ni/Αιι透明 導、:,利用金屬之低電阻值,以達到電流分布之效果, =^ "發光一極體之發光特性。然而實質上,以此類材料 ‘、之透明導電層,在經過融合處理後,直穿透率僅% 5〇。/◦〜70%,因此影響發光二極體之發光效率、。半、、、勺1222229 V. Description of the invention (1) Technical field of the invention / The invention relates to a kind of light-emitting element, and in particular to a kind of light-emitting element having nano-core conductive particles. -: Fanguang hexapole has a wide range of applications. For example, it can be used in optical displays, parent communication, storage devices, communication devices, and Zhaoming penetrating devices. rImproving the brightness of light-emitting diodes: an important issue in the manufacture of light-emitting diodes. Prior Art II = No. 5,789,768 [its applicant is the same as the present case]: pole]: = light emitting diode structure shown, this prior art light emitting thunder; hn! Is a transparent oxide conductive layer 16 formed on the contact layer 15, : The current from m can be uniformly 1 1 1 pair in the transparent oxide conductive layer 16. The transmittance of the transparent oxide conductive layer can reach more than 85%. The light from the "3" day to the transparent oxide conductive layer can be easily taken out. The resistance value of the ίίΠ layer is about 20 ~ 100 Ω / □, where the resistance value is ^ Shi Road / for small-sized light-emitting elements is still feasible ', but it is not applicable when applied to large-sized light-emitting elements. 1 ^ Country Patent No. 5, 563, 422 discloses a light-emitting diode structure Φ Φ formed on a P-type contact layer at a low temperature to form a very thin Ni / Aluminium transparent conductor: using the low resistance value of the metal to achieve The effect of the current distribution is the light-emitting characteristics of light-emitting monopoles. However, the transparent conductive layer of this kind of material ', after fusion processing, has a straight transmission rate of only 50%. / ◦ ~ 70%, so it affects the luminous efficiency of light-emitting diodes. ,Spoon

第6頁 1222229 五、發明說明(2) 於中華民國專利第134, 587號中,揭露一種發光元件 構造,該元件之表面存在一複合抗反射層,其中該複合抗 反射層是由一金屬導體層例如Ag,該金屬導體層與 A 1 InGaP發光元件接觸,導體層之上有一透明氧化導電層 例如氧化銦錫、氧化錫,來助增電流擴散效率。然而實質 上’該金屬導體之厚度必須夠薄,才可減少光線被金屬導 體吸收之程度’·另外金屬導體層與A 1 I n G a P發光元件之間 接合力非常差’在蒸鍍後很容易剝離,將不利於後續之製 程進行。 發明内容 明靈感,認為若以一奈米核殼導電粒子層來取代習知技蓺 之金屬導體層,該奈米核殼導電粒子以銀為核而於其外; 覆以金形成殼,此可避免銀之氧化,而形成具核齄Page 6 1222229 V. Description of the invention (2) In the Republic of China Patent No. 134, 587, a structure of a light-emitting element is disclosed. A composite anti-reflection layer exists on the surface of the element, and the composite anti-reflection layer is made of a metal conductor. A layer such as Ag, the metal conductor layer is in contact with the A 1 InGaP light-emitting element, and a transparent oxide conductive layer such as indium tin oxide or tin oxide is provided on the conductor layer to help increase the current diffusion efficiency. However, in essence, "the thickness of the metal conductor must be thin enough to reduce the degree of light absorbed by the metal conductor." In addition, the bonding force between the metal conductor layer and the A 1 I n G a P light-emitting element is very poor. It is easy to peel off, which is not conducive to the subsequent process. SUMMARY OF THE INVENTION Inspiration, it is believed that if a nano-core conductive particle layer is used to replace the metal conductive layer of the conventional technique, the nano-core conductive particle has silver as the core and is outside it; Can prevent the oxidation of silver and form a nuclear plutonium

〈aippingj沄成型於發光疊層上, 粒子層 形成一 i: 層形成i 導電層二 本案發明人於思考如何解決前述之缺點時,獲得一發 t霧(spray)或浸潰 進而製成奈来核鉛邋雪<Aippingj 沄 is formed on the light-emitting stack, and the particle layer forms i: layer forms i conductive layer 2. When the inventor of the present case is thinking about how to solve the aforementioned shortcomings, he obtains a spray or impregnation to make Nair Nuclear lead

12222291222229

提高發光元件之發光效率。 發明概要 本發明之主要 子之發光元件,以 之金屬導體層,因 徑,故其呈透明狀 的問題。 目的在於提供一種具有奈米核殼導電粒 一奈米核殼導電粒子層來取代習知技藝 該奈米核殼導電粒子為奈米尺度之粒κ ;將可解決習知技藝中光穿透效率不佳 夕路水發^另一目的在提供一種具有奈米核殼導電粒子 之^九疋件,該奈米導電粒子可均勻懸浮於溶劑中,而 1己ΐ的奈米導電粒子溶液可以成本較低之喷霧(spray)或 ^^(dippmg)法成型於發光疊層上,進而製成奈米核殼 導電粒子層,因此可降低成本,簡化製程。 本發明之又一目的在提供一種具有奈米核殼導電粒子 之發光70件’於該奈米核殼導電粒子層及該發光疊層之 間’形成一透明氧化導電層,該透明氧化導電層能夠與發 光疊層形成歐姆接觸,而奈米核殼導電粒子層可增加透明 氧化導電層之導電性,且仍能維持較佳之光穿透效率,如 此可提南發光元件之發光效率。 依本發明一較佳實施例具有奈米核殼導電粒子層之發 光元件,包含一第一電極、形成於該第一接線電極上之一 基板、形成於該基板上之一第一束缚層、形成於該第一束 缚層上之一發光層、形成於該發光層上之一第二束缚層、 形成於該第二束缚層上之一第一接觸層、形成於該第一接Improve the luminous efficiency of the light-emitting element. SUMMARY OF THE INVENTION The problem is that the light-emitting element, which is the main element of the present invention, is transparent due to its diameter. The purpose is to provide a nano-core-shell conductive particle-nano-core-shell conductive particle layer to replace the conventional technology. The nano-core conductive particle is a nano-scale particle κ; it will solve the light penetration efficiency in the conventional technology. Poor evening road water development ^ Another purpose is to provide a nine-piece piece with nano-core conductive particles. The nano-conductive particles can be evenly suspended in a solvent, and a 1-nanometer solution of nano-conductive particles can be cost-effective. A lower spray or ^ (dippmg) method is formed on the light-emitting stack to form a nano-core-shell conductive particle layer, thereby reducing costs and simplifying the manufacturing process. Yet another object of the present invention is to provide a light-emitting 70 piece having nano-core-shell conductive particles 'between the nano-core-shell conductive particle layer and the light-emitting stack' to form a transparent oxide conductive layer, the transparent oxide conductive layer It can form ohmic contact with the light-emitting stack, and the nano-core-shell conductive particle layer can increase the conductivity of the transparent oxidized conductive layer and still maintain a better light penetration efficiency, which can improve the light-emitting efficiency of the light-emitting device in the south. According to a preferred embodiment of the present invention, a light-emitting element having a nano-core-shell conductive particle layer includes a first electrode, a substrate formed on the first wiring electrode, a first binding layer formed on the substrate, A light-emitting layer formed on the first binding layer, a second binding layer formed on the light-emitting layer, a first contact layer formed on the second binding layer, and the first connection layer

第8頁 1222229 五、發明說明(4) 觸層上之一透明氧化導電層,其中該透明氧化導電層之上 表面包含第一接觸區及第二接觸區、形成於該透明氧化導 電層之第一接觸區上之一奈米核殼導電粒子層、以及形成 於該透明氧化導電層之第二接觸區上之一第二接線電極。 前述基板,係包含選自於GaP、GaAs及Ge所構成材料 組群中之至少一種材料;前述第一束縛層、發光層與第二 束縛層’係包含A 1 GalnP ;前述第一接觸層,係包含選自 於GaP、GaAs、GaAsP、InGaP、AlGalnP及AlGaAs 所構成材 料組群中之至少一種材料;前述透明導電層包含選自於氧 化銦錫、氧化鎘錫、氧化銻錫、氧化鋅及氧化鋅錫所構成 材料組群中之至少一種材料;前述奈米核殼導電粒子層之 核,係包含選自於Ni、Ag或Cr所構成材料組群中之至少一 ,材料;前述奈米核殼導電粒子層之殼,係包含選自於^ 或Pt所構成材料組群中之至少一種材料。 實施方式 請參閱圖2,依本發明 &amp; „也 ^ 電粒子層之發光元件2二”實施例具有奈米核殼導 該第-接線電㈣上之第一接線電極28、形成於 第-束缚層22、形成於該=、形成於該基板2〇上之-形成於該發光層23上之」篦缚層22上之一發光層23、 缚層24上之一第一接網M第一束缚層24、形成於該第二束 -透明氧化導電層26,:2二:形成於該第一接觸層25上之 含一第一接觸區及第二=;_亥透明氧化導電層《上表面包 安觸區、形成於該透明氧化導電層 1222229Page 8 1222229 V. Description of the invention (4) A transparent oxidized conductive layer on the contact layer, wherein the upper surface of the transparent oxidized conductive layer includes a first contact region and a second contact region, and the first contact region is formed on the transparent oxide conductive layer. A nano-core-shell conductive particle layer on a contact region, and a second wiring electrode formed on the second contact region of the transparent oxide conductive layer. The substrate includes at least one material selected from the group consisting of GaP, GaAs, and Ge; the first binding layer, the light emitting layer, and the second binding layer include A 1 GalnP; the first contact layer, At least one material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, and AlGaAs; the transparent conductive layer includes at least one selected from indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and At least one material in the group of materials consisting of zinc tin oxide; the core of the nano-core-shell conductive particle layer includes at least one material selected from the group of materials consisting of Ni, Ag, or Cr; the nano The shell of the core-shell conductive particle layer contains at least one material selected from the group consisting of ^ or Pt. For an embodiment, please refer to FIG. 2. According to the present invention, “the light-emitting element 22 of the electric particle layer” embodiment has a nano-core-shell conductive first wiring electrode 28 on the first wiring electrode, and is formed on the first- Binding layer 22, formed on the =, formed on the substrate 20-formed on the light-emitting layer 23 "one of the light-emitting layer 23 on the binding layer 22, one of the first network M on the binding layer 24 A binding layer 24 is formed on the second beam-transparent oxidizing conductive layer 26: 22: a first contact region and a second contact layer formed on the first contact layer 25 are formed; An upper surface is covered with a contact area and is formed on the transparent oxide conductive layer 1222229

之第-接觸區上之一奈米核殼導電粒子層27、以及形成於 該透明氧化導電層之第二接觸區上之一第二接線電極29。 明參閱圖3 ’依本發明另一較佳實施例具有奈米核殼 ”電粒子層之發光το件3,包含一絕緣基板3〇、形成於該 、、巴緣基板30上之一第二接觸層31,其中,該第二接觸層31 ,上表面包含-第一表面區域與一第二表面區$、形成於 Ϊ 〇第表面區域上之一第一束缚層3 2、形成於該第-束缚 曰2上之一發光層33、形成於該發光層33上之一第二束缚 層匕形成於該第二束缚層34上之一第一接觸層35、形成 二忒第-接觸層35上之—透明氧化導電層⑼,彡中該透明 氧化導電層之上表面包含一第一接觸區及第二接觸區、形 成於該透明氧化導電層之第一接觸區上之一奈米核殼導電 粒子層37、形成於該透明氧化導電層之第二接觸區上之一 第一接線電極38、以及形成於該第二表面區域上之一第二 接線電極39。 請參閱圖4,依本發明又一較佳實施例具有奈米核殼 導電粒子層之發光元件4,其與發光元件3不同處在於透明 氧化導電層36上形成一奈米核殼導電粒子層37、形成於該 奈米核殼導電粒子層37上之一第二透明氧化導電層46、形 成於該第二透明氧化導電層46上之一第一接線電極38、以 ,及形成於該第二表面區域上之一第二接線電極。 上述第一及第二較佳實施例中,該奈米核殼導電粒子 合成方法包含下列步驟,取lg之四氣金酸與lg之硝酸銀溶 於100 mL之二次去離子水,(a)取硝酸銀溶液〇· 375mL於5〇A nano-core-shell conductive particle layer 27 on the first-contact region, and a second wiring electrode 29 formed on the second contact region of the transparent oxide conductive layer. Referring to FIG. 3, a light-emitting το member 3 having a nano-core-shell electric particle layer according to another preferred embodiment of the present invention includes an insulating substrate 30, one formed on the second substrate 30, and the second substrate 30. The contact layer 31, wherein the upper surface of the second contact layer 31 includes a first surface region and a second surface region $, one of the first binding layers 32 formed on the first surface region 2, and formed on the first -One of the light emitting layers 33 on the second layer, a second tie layer formed on the light emitting layer 33, a first contact layer 35 formed on the second tie layer 34, and a second contact layer 35 Upper one—the transparent oxide conductive layer ⑼, wherein the upper surface of the transparent oxide conductive layer includes a first contact area and a second contact area, and a nano-core shell formed on the first contact area of the transparent oxide conductive layer. The conductive particle layer 37, a first wiring electrode 38 formed on the second contact region of the transparent oxidized conductive layer, and a second wiring electrode 39 formed on the second surface area. Please refer to FIG. Luminescence of another preferred embodiment of the invention having a nano-core-shell conductive particle layer The component 4 differs from the light-emitting element 3 in that a nano-core conductive particle layer 37 is formed on the transparent oxide conductive layer 36, and a second transparent oxide conductive layer 46 formed on the nano-core conductive particle layer 37, A first wiring electrode 38 formed on the second transparent oxide conductive layer 46, and a second wiring electrode formed on the second surface area. In the first and second preferred embodiments described above, the The method for synthesizing nano-core-shell conductive particles includes the following steps, dissolving lg of tetragas auric acid and lg of silver nitrate in 100 mL of secondary deionized water, and (a) taking a silver nitrate solution of 0.375 mL in 50%.

第10頁 1222229 五、發明說明(6) mL容量瓶中,並稀釋至50 mL ; (b)先取硝酸銀溶液〇· 於50 mL容量瓶中,並稀釋至5〇 ‘ ;(幻取四氯金酸溶液 0.865 mL於50 mL容量瓶中,並稀釋至5〇 mL [前述(乜) 莫耳比1:1之金與銀(a)為銀(c)為金,其“)與((〇為比較 組],將此溶液移至燒杯中加熱攪拌,以丨〇〇它油浴持浐 攪拌六分鐘。此外配置重量百分比為1%之擰檬酸三納'趟貝 (trisodium citrate )與 2% 之丹寧酸(tannic acid)為^ 原劑,加入上述(b)之金屬溶液中,此時將可觀察到溶夜 由原先之無色轉變成淡黃色,此乃由於溶液中之銀離子被 還原成銀原子所造成。以1 〇 0它油浴持續攪拌十五分鐘, 此時緩慢滴入四氯金酸溶液〇· 43 mL,再持續攪拌十^五’里分, 鐘,移去加熱源,持續攪拌十分鐘,此步驟之目的乃刀 高粒徑分布之均勻度,經由上述步驟即可得卜6⑽具核殼 (AgcoreAushell)結構之奈米核殼導電粒子。將此奈米核 殼導電粒子水溶液以酒精稀釋之,以喷灑法可成型於所欲 形成電極之處,而形成導電薄膜。其中銀為電阻極低之金 屬,然而銀本身極易被氧化,故本發明藉由加入金防止此 氧化現象。由於所有反應均於液相中進行,故粉體之粒徑 仍可保持原有之極小尺度。 前述基板,係包含選自於GaP、GaAs、GaAsP、Page 10 1222229 V. Description of the invention (6) mL volumetric flask, and diluted to 50 mL; (b) first take silver nitrate solution 0 · in a 50 mL volumetric flask, and dilute to 50 '; 0.865 mL of the acid solution in a 50 mL volumetric flask, and diluted to 50 mL [aforesaid (i) Moore ratio of 1: 1 gold and silver (a) is silver (c) is gold, and ") and ((〇 For comparison group], the solution was moved to a beaker and heated, and stirred in an oil bath for six minutes. In addition, a 1% weight percent trisodium citrate (trisodium citrate) with 2% % Tannic acid is ^ original agent, added to the metal solution of (b) above, at this time it can be observed that the dissolution night changes from the original colorless to pale yellow, because the silver ions in the solution are Caused by reduction to silver atoms. Stir continuously in an oil bath for fifteen minutes, at this time slowly add 0.43 mL of tetrachloroauric acid solution, and continue to stir for ten ^ five minutes, and then remove the heat. Source, continue to stir for ten minutes. The purpose of this step is to achieve high uniformity of particle size distribution. Through the above steps, you can get 6 (AgcoreAushell) structured nano-core-shell conductive particles. This nano-core-shell conductive particle aqueous solution is diluted with alcohol and can be formed at the desired electrode by spraying to form a conductive film. Among them, silver has extremely low resistance. Metal, but silver itself is easily oxidized, so the present invention prevents this oxidation phenomenon by adding gold. Since all reactions are performed in the liquid phase, the particle size of the powder can still maintain the original small scale. The aforementioned substrate , Which contains a material selected from the group consisting of GaP, GaAs, GaAsP,

AlGaAs、SiC或Ge所構成材料組群中之至少一種材料; 述絕緣基板,係包含選自A1 203或玻璃所構成材料組群中 一種材料或其它可代替之材料;前述第一 包含選自 A1GaInP、A1N、GaN、A1GaN、InGaNUUnGaimAt least one material from the group of materials consisting of AlGaAs, SiC or Ge; said insulating substrate comprises a material selected from the group of materials consisting of A1 203 or glass or other alternative materials; the aforementioned first comprises a material selected from A1GaInP , A1N, GaN, A1GaN, InGaNUUnGaim

1222229 五、發明說明(7) ,構成材料組群中之至少一種材料;前述發光層係包含選自 AlGalnP、GaN、InGaN或AlInGaN所構成材料組群中之至少 一種材料;前述第二束缚層係包含選自A1GaInp、A1N、 GaN、AlGaN、InGaN及A1 InGaN所構成材料組群中之至少一 種材料;前述第一或第二接觸層,係包含選自KGaP、1222229 V. Description of the invention (7), at least one material constituting the material group; the light-emitting layer system includes at least one material selected from the group consisting of AlGalnP, GaN, InGaN, or AlInGaN; the second binding layer system Contains at least one material selected from the group consisting of A1GaInp, A1N, GaN, AlGaN, InGaN, and A1 InGaN; the first or second contact layer includes a material selected from KGaP,

GaAs、GaAsP、InGaP、AlGalnP、AlGaAs、GaN、InGaN 或GaAs, GaAsP, InGaP, AlGalnP, AlGaAs, GaN, InGaN or

AlGaN所構成材料組群中之至少一種材料;前述透明氧化 =電層或第二透明氧化導電層包含選自於氧化銦錫、氧化 鎘錫、氧化銻錫、氧化辞及氧化鋅錫所構成材料組群中之 至少一種材料;前述奈米核殼導電粒子層之核,係包含選 自,N i、Ag或Cr所構成材料組群中之至少一種材料;前述 奈米核殼導電粒子層之殼,係包含選自於Au或以所構成材 料組群中之至少一種材料。 、雖然本發明之發光二極體已以較佳實施例揭露於上, =本,月之範圍並不限於上述較佳實施例,應以下述古主 範圍所界定為準。因此任何熟知此項技藝者,在不‘ 發明之申請專利範圍及精神下,當可做任何改變。At least one material from the group consisting of AlGaN; the transparent oxide = electrical layer or the second transparent oxide conductive layer includes a material selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, oxide, and zinc tin oxide At least one material in the group; the core of the nano-core-shell conductive particle layer includes at least one material selected from the group consisting of Ni, Ag, or Cr; the nano-core-shell conductive particle layer The shell comprises at least one material selected from the group consisting of Au or a group of materials. Although the light-emitting diode of the present invention has been disclosed in the preferred embodiment above, the scope of this month is not limited to the above-mentioned preferred embodiment, and should be defined by the scope of the ancient master below. Therefore, any person who is familiar with this art can make any changes without the scope and spirit of the patent application of the invention.

第12頁 1222229 圖式簡單說明 圖式之簡單說明: 圖1為一示意圖,顯示一先前技藝發光二極體之構 造; . 圖2為一示意圖,顯示依本發明一較佳實施例之一種 具有奈米核殼導電粒子層之發光元件; 圖3為一示意圖,顯示依本發明另一較佳實施例之一 種具有奈米核殼導電粒子層之發光元件。 圖4為一示意圖,顯示依本發明又一較佳實施例之一 種具有奈米核殼導電粒子層之發光元件。Page 12122229 Brief description of the drawings Brief description of the drawings: Fig. 1 is a schematic diagram showing the structure of a prior art light-emitting diode; Fig. 2 is a schematic diagram showing a device according to a preferred embodiment of the present invention. Light-emitting element with nano-core-shell conductive particle layer; FIG. 3 is a schematic diagram showing a light-emitting element having a nano-core-shell conductive particle layer according to another preferred embodiment of the present invention. Fig. 4 is a schematic view showing a light emitting device having a nano-core-shell conductive particle layer according to still another preferred embodiment of the present invention.

符號說明 10 基板 11 第一束缚層 12 發光層 13 第二束缚層 14 窗戶層 15 接觸層 16 透明氧化導電層 ί 17 後電極 18 前電極 2 發光元件 20 基板 22 第一束缚層 2 3 發光層DESCRIPTION OF SYMBOLS 10 Substrate 11 First binding layer 12 Light emitting layer 13 Second binding layer 14 Window layer 15 Contact layer 16 Transparent oxide conductive layer 17 Back electrode 18 Front electrode 2 Light emitting element 20 Substrate 22 First binding layer 2 3 Light emitting layer

第13頁 1222229 圖式簡單說明 24 第二束缚層 25 第二接觸層 2 6 透明氧化導電層 27 奈米核殼導電粒子層 28 第一接線電極 29 第二接線電極 3 發光元件 30 絕緣基板 31 第二接觸層 32 第一束缚層 33 發光層 3 4 第二束缚層 35 第一接觸層 36 透明氧化導電層 37 奈米核殼導電粒子層 3 8 第一接線電極 39 第二接線電極 4 發光元件 46 第二透明氧化導電層Page 13 1222229 Brief description of drawings 24 Second binding layer 25 Second contact layer 2 6 Transparent oxide conductive layer 27 Nano-core conductive particle layer 28 First wiring electrode 29 Second wiring electrode 3 Light-emitting element 30 Insulating substrate 31 Two contact layers 32 First binding layer 33 Light emitting layer 3 4 Second binding layer 35 First contact layer 36 Transparent oxide conductive layer 37 Nano-core conductive particle layer 3 8 First wiring electrode 39 Second wiring electrode 4 Light emitting element 46 Second transparent oxide conductive layer

第14頁Page 14

Claims (1)

1222229 六、申請專利範圍 1 · 一種具有奈米核殼導電粒子層之發光元件,包含: 一發光疊層; 一透明氧化導電層,形成於該發光疊層之上;以及 奈米核殼導電粒子層,形成於該透明氧化導電層之 2 &lt; t申請專利範圍第1項所述之具有奈米核殼導電粒子層 明^光元件’其中,更包含分別形成於該發光疊層及該透 氣化導電層上之第一接線電極與第二接線電極。 &lt; 2申請專利範圍第1項所述之具有奈米核殼導電粒子層 I光元件,其中,該發光疊層包含: 一基板; 一第一導電性半導體疊層; —發光層;以及 第一導電性半導體憂層。 之如申請專利範圍第1項所述之具有奈米核殼導電粒子層 成發光元件,其中,更包含於該奈米核殼導電粒子層上形 第二透明氧化導電層。 〕· 如由 之&amp;甲請專利範圍第4項所述之具有奈米核殼導電粒子層 二^光元件,其中,更包含分別形成於該發光疊層及該第 遷明氧化導電層上之第一接線電極與第二接線電極。1222229 VI. Scope of patent application 1 · A light-emitting element having a nano-core-shell conductive particle layer includes: a light-emitting stack; a transparent oxidized conductive layer formed on the light-emitting stack; and nano-core-shell conductive particles Layer, formed on the transparent oxidized conductive layer 2 &lt; t the light-emitting element with a nano-core-shell conductive particle layer described in item 1 of the patent application scope, further comprising a light-emitting stack and the air-permeable layer respectively formed The first wiring electrode and the second wiring electrode on the conductive layer. &lt; The optical element having a nano-core-shell conductive particle layer I according to item 1 of the scope of the patent application, wherein the light-emitting stack includes: a substrate; a first conductive semiconductor stack; a light-emitting layer; and A conductive semiconductor layer. The light emitting element having a nano-core-shell conductive particle layer as described in item 1 of the scope of the patent application, further comprises a second transparent oxide conductive layer formed on the nano-core-shell conductive particle layer. ] As described in the &amp; A patent claim No. 4 of the scope of the patent claims having a nano-core-shell conductive particle layer two light elements, which further includes being formed on the light-emitting stack and the first light-emitting oxide conductive layer The first wiring electrode and the second wiring electrode. 12222291222229 til請專利範圍第1項所述之具有奈米核殼導電粒子層 =發=件,《中,該透明氧化導電層包含選自於氧化姻 ϊ群錫、氧化銻錫、氧化辞及氧化鋅錫所構成材料 組群中之至少一種材料。 A W ΓΓ 夕iI請專利範圍第4項所述之具有奈米核殼導電粒子芦 it件中,該第二透明氧化導電層包含選自於曰氧 =銦錫、氧化鎘錫、氧化銻錫、氧化鋅及槿 材料組群中之至少一種材料。 〒场所構成 8.—種具有奈米核殼導電粒子層之發光元件,包含: 一第一接線電極; 一基板,形成於該第二接線電極之上; 一第一束缚層,形成於該基板之上; 一發光層,形成於該第一束缚層之上; 一第二束缚層,形成於該發光層之上; 一第一接觸層,形成於該第二束縛層之上; 一透明氧化導電層,形成於該第一接觸層之上,其中 該透明氧化導電層之上表面包含一第一接觸區及第/、 區; 一银觸 一奈米核殼導電粒子層,形成於該透明氧化導電層之 第一接觸區上;以及 9 第一接線電極,形成於遠透明乳化導電層之第二接 1222229 六、申請專利範圍 觸區上。 9. 一種具有奈米核殼導電粒子層之發光元件,包含: 一絕緣基板; 一第二接觸層,形成於該絕緣基板之上,其中,該第 二接觸層之上表面包含一第一表面區域與一第二表面區 域; 一第一束缚層,形成於該第一表面區域之上; 一發光層,形成於該第一束缚層之上;Til, please refer to the conductive particle layer with nano-core and shell described in the first item of the patent scope = hair = ", in which the transparent oxidized conductive layer contains a group selected from the group consisting of tin oxide oxide, antimony tin oxide, zinc oxide and zinc oxide. At least one material in a group of materials made of tin. The second transparent oxidized conductive layer in AW ΓΓ is described in item 4 of the conductive particle with nano-core-shell conductive particles described in the patent scope, and is selected from the group consisting of oxygen = indium tin, cadmium tin oxide, antimony tin oxide, At least one material from the group of zinc oxide and hibiscus materials. 〒 Site structure 8. A light-emitting element having a nano-core-shell conductive particle layer, comprising: a first wiring electrode; a substrate formed on the second wiring electrode; a first binding layer formed on the substrate Over; a light emitting layer formed on the first binding layer; a second binding layer formed on the light emitting layer; a first contact layer formed on the second binding layer; a transparent oxidation A conductive layer is formed on the first contact layer, wherein the upper surface of the transparent oxidized conductive layer includes a first contact region and a first and a first region; a silver-contacted nano-core-shell conductive particle layer is formed on the transparent layer; On the first contact area of the oxidized conductive layer; and 9 the first wiring electrode formed on the second connection of the far-transparent emulsified conductive layer 1222229 6. the patent application scope of the touch area. 9. A light emitting element having a nano-core-shell conductive particle layer, comprising: an insulating substrate; a second contact layer formed on the insulating substrate, wherein an upper surface of the second contact layer includes a first surface A region and a second surface region; a first binding layer formed on the first surface region; a light emitting layer formed on the first binding layer; 一第二束缚層,形成於該發光層之上; 一第一接觸層,形成於該第二束缚層之上; 一透明氧化導電層,形成於該第一接觸層之上,其中 該透明氧化導電層之上表面包含一第一接觸區及第二接觸 區, 一奈米核殼導電粒子層,形成於該透明氧化導電層之 第一接觸區上;A second tie layer is formed on the light emitting layer; a first contact layer is formed on the second tie layer; a transparent oxide conductive layer is formed on the first contact layer, wherein the transparent oxide The upper surface of the conductive layer includes a first contact region and a second contact region, and a nano-core-shell conductive particle layer is formed on the first contact region of the transparent oxide conductive layer; 一第二接線電極,形成於該第二表面區域之上;以及 一第一接線電極,形成於該透明氧化導電層之第二接 觸區上。 10. —種具有奈米核殼導電粒子層之發光元件,包含: 一基板; 一第一束缚層,形成於該基板之上; 一發光層,形成於該第一束缚層之上;A second wiring electrode is formed on the second surface area; and a first wiring electrode is formed on the second contact region of the transparent oxide conductive layer. 10. A light-emitting element having a nano-core-shell conductive particle layer, comprising: a substrate; a first binding layer formed on the substrate; a light-emitting layer formed on the first binding layer; 第17頁 1222229 六、申請專利範圍 一第二束缚層,形成於該發光層之上; 一第一接觸層,形成於該第二束缚層之上; 一第一透明氧化導電層,形成於該第一接觸層之上; 一奈米核殼導電粒子層,形成於該第一透明氧化導電 層之上; 一第一透明氧化導電層,形成於該奈米核殼導電粒子 層之上; 一第一接線電極,形成於該第二透明氧化導電層之 上;以及 一第一接線電極,形成於該第二表面區域之上。 11 ·如申請專利範圍第8項或第9項所述之具有奈米核殼導 電粒子層之發光元件,其中,該透明氧化導電層包含選自 於氧化銦錫、氧化鎘錫、氧化銻錫、氧化鋅及氧化鋅錫所 構成材料組群中之至少一種材料。 12·如申請專利範圍第1 〇項所述之具有奈米核殼導電粒子 層之發光元件,其中,該第一透明氧化導電層包含選、自於 乳化銦錫、氧化鎘錫、氧化銻錫、氧化鋅# 成材料組群中之至少一種材料。 及乳化鋅錫所榍 禺-如申請專利範圍第10項所述之具有奈米 光元件,其中,胃第二透明氧化導電/包導含電:: 匕銦錫、氧化録錫、氧化錄錫、氧化鋅及氧化鋅錫所 、申請專利範圍 成材料組群中之至少—種材料。 如申請專利範圍第3項所述之具有 材料組群中之至小央、Gap、GaAsp、AiGaAs或金屬所構成 f夕一種材料或其它可代替之材料。 :如::件專二範;, ;aA二A1 ⑽、阶二::一種材 枓或其它可代替之材料。 野r 1主少種材 1 6.如申請專利範圍第 電粒子層之發光元件第所述之具有奈米核殼導 1 7·如申請專利範圍第j項、 具有奈米核殼導電粒子#之^項、/9項或第1G項所述之 導電粒子層之核係包含;先凡件,其中,該奈米核殼 中之至少一種材料七甘選自於Nl、Ag或以所構成材料組群 中 v冑材枓或其它可代替之材料。 1 8 ·如申請專利範圍第1項、 具有奈米核殼導電粒子層之項、/9項或第10項所述f 之么先疋件,其中,該奈米核设 六、申請專利範圍 至;ί : : : G ?:含選自於Au或Pt所構成材料組群中之 «材枓或其它可代替之材料。 野r《 19.如申請專利範圍第8項、 米核殼導電粒子層發 貝或弟1 0項所述之具有奈 含選自Aicm;7^,其中,該第一束縛層係包 成材料組群中n之至少二G』:、:GaN、InGaN或A1 InGaN所構 種材料或其它可代替之材料。 H如專利範圍第8項、第9項或第10項所述之具有奈 自、Α;Γτ電粒子層之發光元件中,該發光層係包含選 小_ a np、GaN、InGaN或A1 InGaN所構成材料組群中之至 夕一種材料或其它可代替之材料。 2 1如4申凊專利範圍第8項、第9項或第1 〇項所述之具有奈 二亥殼導電粒子層之發光元件,其中,該第二束缚層係包 各選自 AlGalnP、A1N、GaN、AlGaN、InGaN 及A1 InGaN 所構 成材料組群中之至少一種材料或其他可替代之材料。 22·如申請專利範圍第8項、第9項或第丨〇項所述之具有奈 米核殼導電粒子層之發光元件,其中,該第一接觸層係包 含選自於GaP 、 GaAs 、 GaAsP 、 InGaP 、 AlGalnP 、 AlGaAs 、 GaN、InGaN或AlGaN所構成材料組群中之至少一種材料。 2 3 ·如申請專利範圍第8項所述之具有奈米核殼導電粒子層Page 17 1222229 VI. Patent application scope A second binding layer is formed on the light emitting layer; a first contact layer is formed on the second binding layer; a first transparent oxidation conductive layer is formed on the Over the first contact layer; a nano core-shell conductive particle layer formed on the first transparent oxidized conductive layer; a first transparent oxidized conductive layer formed on the nano core-shell conductive particle layer; A first wiring electrode is formed on the second transparent oxide conductive layer; and a first wiring electrode is formed on the second surface area. 11 · The light-emitting element having a nano-core-shell conductive particle layer according to item 8 or item 9 of the scope of the patent application, wherein the transparent oxide conductive layer comprises a material selected from the group consisting of indium tin oxide, cadmium tin oxide, and antimony tin oxide At least one material from the group of materials consisting of zinc oxide, zinc oxide and zinc tin oxide. 12. The light-emitting element having a nano-core-shell conductive particle layer as described in item 10 of the scope of patent application, wherein the first transparent oxidized conductive layer includes selected, self-emulsified indium tin, cadmium tin oxide, and antimony tin oxide. 、 Zinc oxide # forms at least one material in the material group. And emulsified zinc-tin-as described in item 10 of the scope of the patent application, has a nano-optical element, wherein the stomach is second transparent oxidized conductive / conducting electric charge :: Dindium tin, tin oxide, tin oxide, For zinc oxide and zinc tin oxide, the scope of patent application shall be at least one material in the material group. According to item 3 of the scope of the patent application, there is a material group consisting of Xiaoyang, Gap, GaAsp, AiGaAs, or a metal, or a substitute material. : Such as :: Special Second Fan ;,; aA 二 A1 ⑽, Tier 2 :: A kind of material 枓 or other alternative materials.野 r 1 master seed material 1 6. As described in the patent application scope of the light-emitting element of the electric particle layer, it has a nano-core shell-conductor 1 7 · As in the scope of the patent application, it has a nano-core-shell conductive particle # The core system of the conductive particle layer according to item ^, item / 9, or item 1G includes; a prior art piece, wherein at least one material in the nano-core shell is selected from the group consisting of Nl, Ag, or V 胄 材 枓 or other alternative materials in the material group. 1 8 · If the item in the scope of the patent application, the item with the nano-core-shell conductive particle layer, the item / 9, or the item f described in item 10, the nano-core is provided with the scope of the patent application To; ί::: G?: Contains «materials or other alternative materials selected from the group consisting of Au or Pt. Ye r "19. According to item 8 of the scope of the patent application, the core-shell conductive particle layer has 10% or less of Aicm; 7 ^, wherein the first binding layer is formed into a material At least two G of n in the group ::, GaN, InGaN or A1 InGaN, or other substitute materials. H. In the light-emitting element having a nanometer, A; Γτ electro-particle layer as described in the patent scope item 8, 9, or 10, the light-emitting layer contains a selected small _ a np, GaN, InGaN, or A1 InGaN One of the materials in the formed material group or other alternative materials. 2 1 The light-emitting element having a nano-shell conductive particle layer as described in item 4, item 9, or item 10 of the patent application scope of 4, wherein the second binding layer is each selected from AlGalnP, A1N At least one of the materials in the group consisting of GaN, AlGaN, InGaN, and A1 InGaN, or other alternative materials. 22. The light-emitting device having a nano-core-shell conductive particle layer as described in claim 8, item 9, or item 0, wherein the first contact layer comprises a member selected from the group consisting of GaP, GaAs, and GaAsP. AtGa, InGaP, AlGalnP, AlGaAs, GaN, InGaN, or AlGaN are at least one material group. 2 3 · A nano-core-shell conductive particle layer as described in item 8 of the scope of patent application 第20頁 1222229 六、申請專利範圍 之發光元件,其中,該第二接觸層係包含選自於GaP、 GaAs、GaAsP、InGaP、AlGalnP、AlGaAs、GaN、InGaN 或 A 1 G a N所構成材料組群中之至少一種材料。Page 20 1222229 6. A patent-applied light-emitting device, wherein the second contact layer comprises a material group selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, AlGaAs, GaN, InGaN, or A 1 G a N At least one material in the group. 第21頁Page 21
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Publication number Priority date Publication date Assignee Title
US7821022B2 (en) 2005-07-11 2010-10-26 Seoul Opto Device Co., Ltd. Lighting emitting device employing nanowire phosphors

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821022B2 (en) 2005-07-11 2010-10-26 Seoul Opto Device Co., Ltd. Lighting emitting device employing nanowire phosphors
US8232562B2 (en) 2005-07-11 2012-07-31 Seoul Opto Device Co., Ltd. Light emitting device employing nanowire phosphors

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