1222126 (1) 玖、發明說明 發明所屬技術領域 本發明係關於一種晶圓乾燥方法和裝置，其中待乾燥 晶圓相對於鉛直方向具有一微傾角。 先前技術 在晶圓之製造過程中，一般以去離子水（DIW)淸洗晶 圓。在以去離子水淸洗晶圓後，一般以異丙醇（I PA)將晶 圓表面水份脫水乾燥。在習知之I P A乾燥器1 0中，如圖1 所示，潮濕的晶圓彳2被傳送至IPA蒸氣室內。IPA以氮氣 (N2)當成傳輸氣體，導入蒸氣乾燥室15內，由底部加熱器 11使IPA受熱蒸發爲蒸氣以充滿在該蒸氣乾燥室15中。藉 此，I P A之高揮發性可將晶圓表面水份脫水，避免水痕， 微粒及金屬雜質之黏附於晶圓表面上。但是，在此習知技 藝中，承載於晶圓載器1 4內之部份晶圓1 2因沒入晶圓載 器1 4之溝槽內而無法完全乾燥，因此對於可使用之晶圓部 份形成顯著的影響。 在另一習知技藝中，如圖2所示，其爲一 Marangoni 乾燥器20，其利用IPA和去離子水表面張力之不同，將晶 圓2 1表面殘留得水份吸收流回水槽，以脫水乾燥。在 Marangoni乾燥器中，當淸洗完畢後，將晶圓自去離子水 中緩慢拉出（圖中從a位置至b位置），以氮氣23當成傳輸氣 體將IPA24吹向潮濕晶圓，由於晶圓表面之IPA濃度大於 去離子水濃度，故表面張力減小，因此水分子被吸回水槽 -6- (2) (2)1222126 。但是，在該習知技藝中，即使利用表面張力差，承載在 晶圓載器之溝槽中之晶圓部份亦難以完全脫水。 一般而言，晶圓之水痕限制爲離晶圓邊緣1.5 m m，而 在製造晶圓時，通常排除使用晶圓邊緣3至5mm。但是， 如果欲擴大使用晶圓時，由於習知技藝無法完全使晶圓邊 緣之水痕乾燥，因此對於擴大使用晶圓乃形成一瓶頸。 發明內容 有鑒於上述習知技藝之缺點，亦即無法完全使晶圓邊 緣承載於晶圓載器處之部份乾燥，本發明乃揭示一種晶圓 乾燥方法和裝置，其中晶圓邊緣承載於晶圓載器溝槽處之 部份可獲得充分乾燥。 爲了達成上述目的，本發明揭示一種晶圓乾燥方法， 包含：在一晶圓處理箱中，將多數晶圓鉛直的承載於具有 多數溝槽之晶圓載器上；以去離子水（DIW)淸洗晶圓；傳 送含有異丙醇（IPA)蒸氣之氮氣至晶圓處理箱內以移除在 晶圓上和在晶圓處理箱內部表面之水份；在傳送含有丨P A 蒸氣之氮氣至晶圓處理箱一段時間後，傳送加熱氮氣至晶 圓處理箱內以蒸發IPA和使晶圓乾燥；將含IPA之氮氣排 出晶圓處理箱；和將晶圓從處理箱中移出以進行晶圓其它 後續處理，其中該晶圓相對於鉛直方向具有一微傾角。 在上述之晶圓乾燥方法中，該微傾角爲約3至5度。 在上述之晶圓乾燥方法中’該晶圓載器之承載部提供 一適當斜角，以使晶圓相對於晶圓載器之鉛直方向具有該 (3) (3)1222126 微傾角。 在上述之晶圓乾燥方法中，該晶圓載器之底部前端提 供一墊，以使晶圓載器前端墊高以提供晶圓該微傾角。 在本發明之另一觀點中，本發明提供一種晶圓乾燥裝 置’包含：一晶圓處理箱，其中容納一晶圓載器，該晶圓 載器上具有多數溝槽以承載多數晶圓；一蒸氣產生器，其 設置在處理箱上方，用以產生含IP A蒸氣之氮氣；一連接 管，其連接在蒸氣產生器和處理箱間，以傳送所產生之蒸 氣至處理箱；和一排放管，其設置在處理箱底部，以排放 蒸氣，其中該晶圓相對於鉛直方向具有一微傾角。 在上述之晶圓乾燥裝置中，該微傾角爲約3至5度。 在上述之晶圓乾燥裝置中，該晶圓載器之承載部提供 一適當斜角，以使晶圓相對於晶圓載器之鉛直方向具有該 微傾角。 在上述之晶圓乾燥裝置中，該晶圓載器之底部前端提 供一墊，以使晶圓載器之前端墊高以提供晶圓該微傾角。 在本發明之又一觀點中，本發明提供一種晶圓載器， 其中該晶圓相對於鉛直方向具有一微傾角。 在上述之晶圓載器中，該微傾角爲約3至5度。 在上述之晶圓載器中，該晶圓載器之承載部提供一適 當斜角，以使晶圓相對於晶圓載器之鉛直方向具有該微傾 角。 在上述之晶圓載器中，該晶圓載器之底部前端提供〜 墊，以使晶圓載器之前端墊高以提供晶圓該微傾角。 -8- (4) (4)1222126 由下述之說明伴隨附圖之解說，其中本發明之較佳實 施例以說明例顯示，可更加明瞭本發明之上述和其它目的 ，特徵，和優點。 實施方式 以下參考圖3至5說明本發明之實施例。 如圖3所示，在本發明之晶圓乾燥裝置1中，包含一晶 圓處理箱2，其中容納一晶圓載器3，該晶圓載器3上具有 多數溝槽4(見圖4或5)以承載多數晶圓5; —蒸氣產生器6 ，其設置在處理箱2上方，用以產生含IP A蒸氣之氮氣；一 加熱器7用以加熱含IPA之氮氣；一連接管8，其連接在蒸 氣產生器6和處理箱2間，以傳送所產生之蒸氣至處理箱2 ;和一排放管9，其設置在處理箱2底部，以排放蒸氣。 其次說明本發明之方法。 在一晶圓處理箱2中，將多數晶圓5鉛直的承載於具有 多數溝槽4之晶圓載器3上，而後以去離子水（DIW)淸洗晶 圓。而後，傳送含有異丙醇（IPA)蒸氣之氮氣至晶圓處理 箱2內，以移除在晶圓5上和在晶圓處理箱2內部表面之水 份。在傳送含有IPA蒸氣之氮氣至晶圓處理箱2—段時間後 ，傳送加熱氮氣至晶圓處理箱2內以蒸發IPA和使晶圓5乾 燥。而後，將含丨P A之氮氣經由排放管9排出晶圓處理箱2 外。在完成上述步驟後，將晶圓5從處理箱2中移出，以進 行晶圓其它後續處理。 在本發明之上述方法和裝置中，如圖3所示，該晶圓5 -9 - (5)1222126 相對於鉛直方向（如箭頭A所示）具有一微傾角。 在本發明之一實施例中’該晶圓載器3之晶圓承載部 3 1具有一微傾角α，以使承載在晶圓載器3上之晶圓5相 對於晶圓載器之鉛直方向具有一微傾角^。 在本發明之另一實施例中，該晶圓載器3之底部前端 設置一墊32，以使晶圓載器3提供該晶圓所需之微傾角α1222126 (1) (ii) Description of the invention Technical field of the invention The present invention relates to a wafer drying method and apparatus, wherein the wafer to be dried has a slight inclination angle with respect to the vertical direction. Previous technology During wafer manufacturing, wafers were generally washed with deionized water (DIW). After the wafer is rinsed with deionized water, the surface of the wafer is generally dehydrated and dried with isopropyl alcohol (I PA). In the conventional IPA dryer 10, as shown in FIG. 1, the wet wafer 彳 2 is transferred into the IPA vapor chamber. The IPA is introduced into the steam drying chamber 15 with nitrogen (N2) as a transmission gas, and the IPA is heated and evaporated into steam by the bottom heater 11 to fill the steam drying chamber 15. As a result, the high volatility of IPA can dehydrate the wafer surface to prevent water marks, particles and metal impurities from adhering to the wafer surface. However, in this conventional technique, a part of the wafer 12 carried in the wafer carrier 14 cannot be completely dried because it is submerged in the groove of the wafer carrier 14, so for the usable wafer portion, Make a significant impact. In another conventional technique, as shown in FIG. 2, it is a Marangoni dryer 20, which uses the difference in surface tension of IPA and deionized water to absorb the water remaining on the surface of the wafer 21 and flow back to the water tank. Dehydrate and dry. In the Marangoni dryer, after the rinsing is completed, the wafer is slowly pulled out of the deionized water (position a to b in the figure), and the nitrogen 23 is used as the transport gas to blow IPA24 to the wet wafer. The IPA concentration on the surface is greater than the concentration of deionized water, so the surface tension is reduced, so water molecules are sucked back into the water tank-6- (2) (2) 1222126. However, in this conventional technique, even if the difference in surface tension is used, it is difficult to completely dehydrate the wafer portion carried in the groove of the wafer carrier. Generally speaking, the water mark on a wafer is limited to 1.5 mm from the edge of the wafer, and when manufacturing a wafer, the use of a wafer edge of 3 to 5 mm is generally excluded. However, if it is desired to expand the use of wafers, the conventional technology cannot completely dry the water marks on the edges of the wafers, so it will form a bottleneck for expanding the use of wafers. SUMMARY OF THE INVENTION In view of the shortcomings of the above-mentioned conventional techniques, that is, the part of the wafer edge carried on the wafer carrier cannot be completely dried. The present invention discloses a method and a device for drying a wafer, wherein the wafer edge is carried on the wafer carrier. The part at the groove of the device can be fully dried. In order to achieve the above object, the present invention discloses a wafer drying method, which includes: in a wafer processing box, vertically carrying most wafers on a wafer carrier having most grooves; and using deionized water (DIW). Wash wafers; transfer nitrogen containing isopropyl alcohol (IPA) vapor to the wafer processing box to remove moisture on the wafer and the inner surface of the wafer processing box; transfer nitrogen containing PA vapor to the crystal After rounding the processing box for a period of time, transfer heated nitrogen to the wafer processing box to evaporate the IPA and dry the wafer; remove the IPA-containing nitrogen from the wafer processing box; and remove the wafer from the processing box to perform other wafers. For subsequent processing, the wafer has a slight tilt angle with respect to the vertical direction. In the wafer drying method described above, the micro-tilt angle is about 3 to 5 degrees. In the above-mentioned wafer drying method, the carrier portion of the wafer carrier provides an appropriate bevel so that the wafer has the (3) (3) 1222126 micro-tilt angle with respect to the vertical direction of the wafer carrier. In the above wafer drying method, a pad is provided at the bottom front end of the wafer carrier, so that the front end of the wafer carrier is raised to provide the micro-tilt angle of the wafer. In another aspect of the present invention, the present invention provides a wafer drying apparatus including: a wafer processing box, which contains a wafer carrier, the wafer carrier has a plurality of grooves to carry a plurality of wafers; a vapor A generator arranged above the processing box to generate nitrogen gas containing IP A vapor; a connecting pipe connected between the steam generator and the processing box to transfer the generated steam to the processing box; and a discharge pipe which It is arranged at the bottom of the processing box to discharge vapor, wherein the wafer has a slight inclination angle with respect to the vertical direction. In the wafer drying apparatus described above, the micro-tilt angle is about 3 to 5 degrees. In the above-mentioned wafer drying apparatus, the carrier portion of the wafer carrier provides an appropriate oblique angle so that the wafer has the slight inclination angle with respect to the vertical direction of the wafer carrier. In the above-mentioned wafer drying device, a pad is provided at the bottom front end of the wafer carrier, so that the front end of the wafer carrier is cushioned to provide the wafer inclination angle. In another aspect of the present invention, the present invention provides a wafer carrier, wherein the wafer has a slight inclination angle with respect to a vertical direction. In the wafer carrier described above, the micro-tilt angle is about 3 to 5 degrees. In the wafer carrier described above, the carrier portion of the wafer carrier provides an appropriate oblique angle so that the wafer has the slight inclination angle with respect to the vertical direction of the wafer carrier. In the wafer carrier described above, a pad is provided at the bottom front end of the wafer carrier, so that the front end of the wafer carrier is cushioned to provide the wafer inclination angle. -8- (4) (4) 1222126 The following description is accompanied by the accompanying drawings, and the preferred embodiments of the present invention are shown by way of illustrative examples, so that the above and other objects, features, and advantages of the present invention can be more clearly understood. Embodiments Hereinafter, embodiments of the present invention will be described with reference to Figs. As shown in FIG. 3, in the wafer drying device 1 of the present invention, a wafer processing box 2 is contained, and a wafer carrier 3 is accommodated therein, and the wafer carrier 3 has a plurality of grooves 4 (see FIG. 4 or 5). ) To carry the majority of wafers 5;-a steam generator 6, which is arranged above the processing box 2 to generate nitrogen gas containing IP A vapor; a heater 7 for heating nitrogen gas containing IPA; a connecting pipe 8, which is connected Between the steam generator 6 and the processing tank 2, the generated steam is transmitted to the processing tank 2; and a discharge pipe 9 is provided at the bottom of the processing tank 2 to discharge the steam. Next, the method of the present invention will be described. In a wafer processing box 2, a plurality of wafers 5 are vertically carried on a wafer carrier 3 having a plurality of grooves 4, and then the wafers are washed with deionized water (DIW). Then, nitrogen gas containing isopropyl alcohol (IPA) vapor is transferred to the wafer processing box 2 to remove water on the wafer 5 and the inner surface of the wafer processing box 2. After transferring nitrogen containing IPA vapor to the wafer processing box 2 for a period of time, heating nitrogen is transferred into the wafer processing box 2 to evaporate the IPA and dry the wafer 5. Then, the nitrogen containing P A is discharged out of the wafer processing box 2 through the exhaust pipe 9. After the above steps are completed, the wafer 5 is removed from the processing box 2 for other subsequent processing of the wafer. In the above method and apparatus of the present invention, as shown in FIG. 3, the wafer 5 -9-(5) 1222126 has a slight inclination angle with respect to the vertical direction (shown by arrow A). In one embodiment of the present invention, the wafer carrying portion 31 of the wafer carrier 3 has a slight inclination angle α, so that the wafer 5 carried on the wafer carrier 3 has a vertical direction with respect to the wafer carrier. Slight inclination ^. In another embodiment of the present invention, a pad 32 is provided at the bottom front end of the wafer carrier 3, so that the wafer carrier 3 provides the micro-tilt angle α required by the wafer.
較佳的，該微傾角α約爲3至5度。 本發明藉由提供晶圓相對於鉛直方向一微傾角，沒入 溝槽中之晶圓之邊緣可獲得更充分的乾燥，因此對於晶圓 邊緣之使用可提供莫大的助益。 本發明並不限於上述之實施例，且於此仍可達成各種 改變和修飾，但其仍屬本發明之精神和範疇。因此，本發 明之精神和範疇應由下述申請專利範圍界定之。Preferably, the micro-tilt angle α is about 3 to 5 degrees. The present invention provides a slight inclination of the wafer with respect to the vertical direction, and the edges of the wafer submerged in the trench can be more fully dried, so the use of the edge of the wafer can provide great benefits. The present invention is not limited to the embodiments described above, and various changes and modifications can be achieved here, but it still belongs to the spirit and scope of the present invention. Therefore, the spirit and scope of the present invention should be defined by the following patent application scope.
圖式簡單說明 圖1爲習知ΙΡΑ乾燥器之示意圖； 圖2爲習知Marangoni乾燥器之示意圖； 圖3爲本發明之晶圓乾燥器之示意圖； 圖4爲本發明之晶圓乾燥器之晶圓載器之擴大示意圖 :和 圖5爲本發明之晶圓乾燥器之另一晶圓載器之擴大示 意圖。 -10- (6)1222126 元件符號對照表 1 晶圓乾燥裝置 2 晶圓處理箱 3 晶圓載器 4 溝槽 5 晶圓 6 蒸氣產生器 7 加熱器 8 連接管 9 排放管Brief description of the drawings Figure 1 is a schematic diagram of a conventional IPA dryer; Figure 2 is a schematic diagram of a conventional Marangoni dryer; Figure 3 is a schematic diagram of a wafer dryer of the present invention; Figure 4 is a schematic diagram of a wafer dryer of the present invention An enlarged schematic diagram of a wafer carrier: and FIG. 5 is an enlarged schematic diagram of another wafer carrier of the wafer dryer of the present invention. -10- (6) 1222126 Component symbol comparison table 1 Wafer drying device 2 Wafer processing box 3 Wafer carrier 4 Groove 5 Wafer 6 Steam generator 7 Heater 8 Connection pipe 9 Drain pipe
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