TW595294B - Via filling method - Google Patents
Via filling method Download PDFInfo
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- TW595294B TW595294B TW090108520A TW90108520A TW595294B TW 595294 B TW595294 B TW 595294B TW 090108520 A TW090108520 A TW 090108520A TW 90108520 A TW90108520 A TW 90108520A TW 595294 B TW595294 B TW 595294B
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- Prior art keywords
- metal
- blind hole
- plating
- filling
- current
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- 238000011049 filling Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000002184 metal Substances 0.000 claims abstract description 122
- 238000007747 plating Methods 0.000 claims abstract description 88
- 238000009713 electroplating Methods 0.000 claims abstract description 24
- 230000002441 reversible effect Effects 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 14
- 238000012856 packing Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 45
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 30
- 239000000758 substrate Substances 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 23
- 239000010949 copper Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000002079 cooperative effect Effects 0.000 description 8
- 238000005868 electrolysis reaction Methods 0.000 description 8
- 239000011888 foil Substances 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
595294 Λ7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1 ) 技術領域 本發明係關於介質充填方法，更為說明的是貫穿設 置於絕緣性樹脂層，且在含有底面的内壁面以金屬薄膜層 所成之盲孔（blind hole)内，由於電鍍充填金屬而形成介質 之有關介質充填方法。 背景技術 在半導体裝置所使用之基板，如第2圖所示，係貫穿 各個由樹脂等之絕緣性材料所成的配線基板1〇，1〇••而形· 成之介貝12，12…所成之導体模組14，14···.而以電氣的 連接。 "貝12，12···係以習知的第3圖所示之介質充填方法 形成。此第3圖示之介質充填方法中，先就如第3圖（“示 ，在銅箔等金屬箔102之一面側所形成絕緣性樹脂層1〇〇， 由以蝕刻等形成底面為金屬箔1〇2所成之盲孔1〇4。 其次，如第3圖（b)所示，在含有盲孔1〇4底面之内壁 面，由於化學電鍍或濺射等形成薄膜金屬層1〇6後，對於 目孔104充填金屬的方向，由於連續通以一定的直流電流 之直流電鑛’盲孔104内充填金屬而形成金屬層1〇8【第3 圖（c)】。 直流電鍍時，盲孔104所開口的絕緣性樹脂層ι〇〇之 開口面側亦形成有金屬層108。因此，由於可用研磨等去 除於絕緣性樹脂層1〇〇之開口面側所形成之金屬層1〇8，故 既可使絕緣性樹脂層1 〇〇之開口面側成為平坦面，亦可用 蝕刻等去除金屬箔層102而形成介質12【第3圖（d)】。 (請先閱讀背面之注意事項再填寫本頁) 蜂裝 訂P----- ·>595294 Λ7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (1) Technical Field The present invention relates to a method for filling a medium, and more specifically, it is provided through an insulating resin layer and on the inner wall surface including the bottom surface. A medium filling method for forming a medium in a blind hole formed by a metal thin film layer by filling metal with electroplating. 2. Description of the Related Art As shown in FIG. 2, a substrate used in a semiconductor device penetrates each of the wiring substrates 10, 10 • made of an insulating material such as a resin, and is formed by a substrate 12, 12 ... The formed conductor modules 14 and 14 are electrically connected. " Shell 12, 12 ... is formed by the conventional medium filling method shown in Fig. 3. In the medium filling method shown in FIG. 3, as shown in FIG. 3 ("showing, an insulating resin layer 100 is formed on one side of a metal foil 102 such as copper foil, etc., and the bottom surface is formed by etching or the like as a metal foil." Blind hole 10 formed by 1002. Next, as shown in FIG. 3 (b), a thin-film metal layer 10 is formed on the inner wall surface of the bottom surface containing blind hole 104 by chemical plating or sputtering. Later, for the direction in which the mesh hole 104 is filled with metal, the metal layer 10 is formed by filling the metal in the blind hole 104 of a DC power mine that continuously passes a certain DC current [Figure 3 (c)]. The metal layer 108 is also formed on the opening surface side of the insulating resin layer ι0 where the hole 104 is opened. Therefore, the metal layer 108 formed on the opening surface side of the insulating resin layer 100 can be removed by grinding or the like. Therefore, either the opening surface side of the insulating resin layer 100 can be made a flat surface, or the metal foil layer 102 can be removed by etching or the like to form the medium 12 [Figure 3 (d)]. (Please read the precautions on the back first (Fill in this page again) Bee Binding P ----- · >
4 595294 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（2 不過於最近，隨著導体模組14， i4···的微細化及配線 基板10的薄層化而使介層12, 12,.亦趨於小徑化。因此， 盲孔104亦小徑化，如以第3圖所示的習知之介層充填方法 形成介層，就如第4圖戶斤*，盲孔1〇4内易形成曰間隙u〇。 其原因推想為直流電料’鍍液雖經㈣，在小徑化的盲 孔104内，電錢未被充分被覆的關係。 如此在小徑化之介質孔内，以電鍍充分充填金屬所 得之介質充填方法，在特開平u — _號公報中，在盲孔 内充填金屬的钱’曾提⑽㈣極與陰極於規定的周期 ^#^PRt^(periodic reverse current electrolytic plating) 之介質充填方法。 前揭的公開公報中所提案在盲孔所採用之pR電鍍中 ，如第5圖所示，在盲孔内充填金屬的方向通以正向電流 (fonvard CUrrent)F，使陽極與陰極於規定的周期反轉，而 與正向電流之相反方向通以逆向電流（reverse current)R而 施以電鍍。由於採用PR電鍍，可防止盲孔内1〇4形成間隙 Π0的情況。 但是，盲孔104如僅以！>&電鍍充填金屬時，由於隨著 金屬之充填盲孔104變淺，金屬的充填速度遲緩，在規定 的電鍍時間内，就如第6圖所示，判明了充填於盲孔1〇4的 金屬層108之表面易於形成凹部112。 而且，凹部112雖將形成於絕緣性樹脂層1〇〇開口面側 之金屬層108研磨去除，亦判明在介質12表面形成凹狀左 右之深度。 本紙張尺度適用中國國家標準（CNS)A4規格（2〗〇 X 297公爱） I^ 丫裝-------一訂P--------ν (請先閱讀背面之注意事項再填寫本頁) 595294 五、發明說明（3 ) 因此’為使在盲孔104充分充填金屬，不得不延長的 電鍍時間'，故僅以PR電鍍在盲孔104充填金屬之介質充填 方法，在工業上無法採用。 但’在小徑化之盲孔104内，如用電鍍充填金屬，則 以使用PR電鍍為最佳。 因此，由以PR電鍍充填金屬於盲孔時，於金屬充填 速度會降低之盲孔104的開口部附近，如能解決金屬充填 速度，則在小徑化的盲孔1〇4可在短時間充分充填金屬。 發明的開示 本發明的課題介質充填方法，為提供比習知的更為 小徑化之盲孔，可用PR電鍍充分充填金屬而得之介質充 填方法。 本發明人對於解決前述課題，經重複檢討結果，在 盲孔内的底部附近，以！>尺電鍍形成的金屬皮膜之金屬充 填後，於盲孔内之殘餘部份，由於以直流電鍍充填金屬， 雖是比習知的更為小徑化之盲孔，經與僅以叹電鍍充填 金屬時比較，發現可在短時間充分充填金屬而達成本發明 〇 經濟部智慧財產局員工消費合作社印製 曾亦即，本發明之介質充填方法之特徵：將底面露出 導体層之盲孔，形成為絕緣性樹脂層，在含有前述盲孔底 面之内壁面形成金屬薄膜層後，於前述盲孔内以電錢充填 金屬形成介質時，該盲孔内充填之金屬通以正向電流，使 陽極與陰極週期的反轉，而與正向電流的電流方向之相反 向由於通以逆向電流之PR電鍍，在前述盲孔内之金 297公釐） 本紙張尺度翻中國國家標準（cns)a7^^· 6 經濟部智慧財產局員工消費合作社印别农 A7 ^____ 五、發明說明（4 ) 屬薄膜上形成金屬皮膜後，前述盲孔内的殘餘部份中，由 於連續通以直流電流之直流電鍍而充填金屬。 本發明中，由於正向電流的電流密度（Fd)與逆向電流 的電流密度（Rd)之比（Fd/Rd)為1以下，且正向電流的通 電時間（Ft)與逆向電流的通電時間（Rt)之比（Ft/Rt)為大於 1的PR電鍍，故以在盲孔内之金屬薄膜上形成金屬皮膜為 佳。 盲孔的約1/2体積，由以PR電鍍形成的金屬皮膜之 金屬充填後，在前述盲孔内的殘餘部份，因以直流電鍍而 充填金屬’故可提高金屬對於盲孔之充填速度。 本杳明採用的PR電鐘，雖對於鍍液的擾拌效果幾乎 無法達及小徑的盲孔内之底部附近，但可用所形成的金屬 皮膜之金屬充填。其理由係認為在盲孔内可存在適度之金 屬離子。 但是’鑛液的攪拌效果可達及之盲孔之開口部附近 ’由於PR電錢’使金屬之充填速度遲緩。 此點於本發明中，在鍍液的攪拌效果可達及之範圍 ’以比PR電鍍的電鍍速度較快之直流電鍍，作為盲孔的 開口部附近之金屬充填用。因此，雖是比習知更為小徑之 盲孔’無需延長時間即可充分充填金屬。 本發明中’盲孔内先以Pr電鍍形成之金屬皮膜的金 屬充填後，有必要以直流電鍍充填金屬。 在此’於盲孔内首先由以連續通以一定的直流電流 之直流電鏡’將金屬充填至規定的厚度後，欲以PR電鍍 本紙張尺度·中關家(2】Q χ 297公爱）4 595294 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (2 However, recently, with the miniaturization of the conductor module 14, i4 ..., and the thinning of the wiring substrate 10, the interposer 12, 12 ,. It also tends to be reduced in diameter. Therefore, the blind hole 104 is also reduced in diameter. For example, the interlayer is formed by the conventional interlayer filling method shown in Fig. 3, as shown in Fig. 4 *. It is easy to form a gap u0 in the hole 104. The reason is that although the plating solution of the direct current material has passed through, in the small-diameter blind hole 104, the electric money is not sufficiently covered. In the dielectric hole, a dielectric filling method obtained by fully filling the metal with electroplating is disclosed in Japanese Unexamined Patent Publication No. _ _, and the metal filled in the blind hole was charged with the cathode and the cathode at a predetermined cycle ^ # ^ PRt ^ ( periodic reverse current electrolytic plating). In the pR plating used in the blind hole proposed in the previously published public bulletin, as shown in Figure 5, the direction of the filling metal in the blind hole is passed with a forward current ( fonvard CUrrent) F, inverting the anode and cathode at a predetermined period, and In the opposite direction of the forward current, electroplating is performed with reverse current R. Due to the use of PR plating, the formation of a gap Π0 in the blind hole 104 can be prevented. However, if the blind hole 104 is used only with > & When filling metal with electroplating, as the blind hole 104 filled with the metal becomes shallower, the filling speed of the metal becomes slower. As shown in FIG. 6 within the prescribed plating time, the It is easy to form the concave portion 112 on the surface of the metal layer 108. In addition, the concave portion 112 was formed by grinding and removing the metal layer 108 formed on the opening surface side of the insulating resin layer 100, and it was also confirmed that a concave shape was formed on the surface of the medium 12. Standards are applicable to China National Standard (CNS) A4 specifications (2) 〇X 297 public love) I ^ installed ------- one order P -------- ν (Please read the precautions on the back first (Fill in this page again) 595294 V. Description of the invention (3) Therefore, 'the plating time has to be extended in order to fully fill the blind hole 104 with metal', so only PR plating is used to fill the blind hole 104 with a metal filling method. Industrially unavailable. But 'in the small-diameter blind hole 104 If the metal is filled with electroplating, it is best to use PR plating. Therefore, when filling the blind hole with PR plating, the metal filling speed will decrease near the opening of the blind hole 104. If the metal filling speed can be solved, Then, the small-diameter blind hole 104 can be fully filled with metal in a short time. The invention disclosed the subject of the present invention, the medium filling method, in order to provide a more small-diameter blind hole, can be fully filled with PR plating Metal-filled medium filling method. The inventors have repeatedly reviewed the solution to the foregoing problem, and found that near the bottom in the blind hole, the result is! > After metal filling of the metal film formed by ruler plating, the remaining part in the blind hole is filled with DC plating, although it is a blind hole with a smaller diameter than the conventional one. Compared with the filling of metal, it was found that the metal can be fully filled in a short time to achieve the cost of invention. It is printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. That is, the characteristics of the method of filling the medium of the present invention: the bottom surface exposes the blind hole of the conductor layer. It is formed as an insulating resin layer. After forming a metal thin film layer on the inner wall surface containing the bottom surface of the blind hole, when the metal is filled with a metal forming medium in the blind hole, a positive current flows through the metal filled in the blind hole, so that The anode and cathode cycles are reversed, and the direction is opposite to the direction of the forward current. Due to the PR plating with the reverse current, the gold in the aforementioned blind hole is 297 mm.) This paper is a Chinese standard (cns) a7. ^^ · 6 Industrielle A7, Consumer Cooperative of Employees of Intellectual Property Bureau, Ministry of Economic Affairs ^ ____ 5. Description of the invention (4) After the metal film is formed on the thin film, Continuously on to a direct current of the direct current electroplating filler metal. In the present invention, since the ratio (Fd / Rd) of the current density (Fd) of the forward current to the current density (Rd) of the reverse current is 1 or less, and the energization time (Ft) of the forward current and the energization time of the reverse current (Rt) ratio (Ft / Rt) is greater than 1 for PR plating, so it is better to form a metal film on the metal film in the blind hole. Approximately 1/2 of the volume of the blind hole is filled with metal with a metal film formed by PR plating, and the remaining part in the aforementioned blind hole is filled with metal because of DC plating, so the filling speed of the metal for the blind hole can be increased. . Although the PR electric clock used in the present invention can hardly reach the vicinity of the bottom in the blind hole of the small diameter for the disturbance effect of the plating solution, it can be filled with the metal of the formed metal film. The reason is that moderate metal ions may exist in the blind hole. However, “the stirring effect of the mineral liquid can reach the vicinity of the opening of the blind hole” and “the PR electric money” makes the filling speed of the metal slow. This point is in the present invention, in a range where the stirring effect of the plating solution is reachable ', a direct current plating faster than the plating speed of PR plating is used as a metal filling near the opening portion of the blind hole. Therefore, although it is a blind hole with a smaller diameter than the conventional one, it can be sufficiently filled with metal without prolonging the time. In the present invention, after the metal of the metal film formed by Pr plating is filled in the blind hole first, it is necessary to fill the metal with DC plating. Here, "the blind hole is first filled with metal with a constant DC current through a direct current microscope" to fill the metal with a predetermined thickness, and then it is to be electroplated with PR. Paper size · Zhongguanjia (2) Q χ 297 public love)
^ ^ Avt Μ--------訂------ (請先間讀背面之注意事項再填寫本頁) 595294 經濟部智慧財產局員工消費合作社印製 Λ7 1)7 五、發明說明（5 ) 將金屬完全充填於盲孔内時，在小徑化的盲孔，金屬的充 填速度變遲緩，故若要充分充填金屬必需延長時間。 其理由為小徑化的盲孔之底部附近，由於鍍液的授 拌效果難於達及’故直流電鐘的金屬充填速度降低；而在 鍍液的攪拌效果可達及之盲孔開口部附近，由於以pR電 鍍的金屬皮膜之形成速度降低。 本發明依據第1圖說明之。本發明中，首如第1圖（a) 所示，在銅箔等金屬箔22的一面側所形成之聚亞胺基樹脂 、環氧基樹脂、，BT樹脂等絕緣性樹脂層2〇 ,由於以碳 酸氣体雷射等之雷射或蝕刻等，形成以底面為金屬箔22所 成的盲孔24。第1圖所示的盲孔24係為形成開口面積廣過 於底面積之尖狀（tapered)的斷面形狀，其底面直徑d為5〇 〜之圓狀’深度h為20〜50//m。 再者’如第1圖（b)所示，在含有此盲孔24底面之内壁 面，由於化學電鍍或濺射（sputtering)等而形成薄膜金屬層 26。此薄膜金屬層26亦可由相同與充填在盲孔24之金屬形 成亦可，雖亦可由相異的金屬形成，但以由銅形成者為佳 。又，薄膜金屬層26由銅形成後，為要提高與被充填金屬 的密着性，以鉻，鎳，鈦所成的密着金屬層，而由濺射等 形成亦可。 其次’以金屬箔22及薄膜金屬層26為電極的一端， 〃此電極之相對的另一端設置電極（無圖示），而施以PR電 錢在此PR電鏡中，如第5圖所示，正向電流ρ與逆向電 々’lR間’交互通以脈動狀之脈動電流；具体上，在盲孔24 — 一 ----------------- (請先閱讀背面之注意事項再填寫本頁) J^yZ94 經濟部智慧財產局員工消費合作社印製 Λ7 B7 五、發明說明（6 ) 内充填金屬之方向通以正向電流F，使陽極與陰極於規定 的週期反轉；在與正向電流F的相反方向，由於通以逆向 電流F的脈動電流而施以電鍍。依據有關PR電鍍，如第工 圖（c)所示，鍍液的攪拌效果難於達及盲孔24的底部附近 ’可用已形成的銅等金屬皮膜28之金屬充填。 此PR電鍍條件，典型的是正向電流的電流密度（Fd) 為〇·5〜2A/dm2，而逆向電流（R)的電流密度（Rd)為i 5〜 l〇A/dm2。典型的是正向電流（ρ)的電流密度（Fd)與逆向 電流（R)的電流密度（Rd)之比（Fd/Rd)為1/5〜1/1。^ ^ Avt Μ -------- Order ------ (Please read the precautions on the back before filling this page) 595294 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 1) 7 V. Explanation of the invention (5) When the metal is completely filled in the blind hole, the filling speed of the metal becomes slow in the small-diameter blind hole, so it is necessary to extend the time to fully fill the metal. The reason is that near the bottom of the small-diameter blind hole, the mixing effect of the plating solution is difficult to reach, so the metal filling speed of the DC clock is reduced; and near the opening of the blind hole, the stirring effect of the plating solution can reach, The formation rate of the metal film due to pR plating is reduced. The present invention is explained based on FIG. In the present invention, as shown in FIG. 1 (a), an insulating resin layer such as a polyimide resin, an epoxy resin, or a BT resin is formed on one side of a metal foil 22 such as a copper foil. A blind hole 24 made of a metal foil 22 with a bottom surface is formed by a laser such as a carbon dioxide gas laser or etching. The blind hole 24 shown in FIG. 1 has a tapered cross-sectional shape with an opening area that is wider than the bottom area. The bottom surface diameter d is 50 and the circle shape is a depth of 20 to 50 // m. . Furthermore, as shown in Fig. 1 (b), a thin-film metal layer 26 is formed on the inner wall surface including the bottom surface of the blind hole 24 by chemical plating, sputtering, or the like. The thin-film metal layer 26 may be formed of the same metal as that filled in the blind hole 24. Although it may be formed of a different metal, it is preferably formed of copper. Further, after the thin-film metal layer 26 is formed of copper, in order to improve the adhesion with the metal to be filled, an adhesion metal layer made of chromium, nickel, or titanium may be formed by sputtering or the like. Secondly, take the metal foil 22 and the thin-film metal layer 26 as one end of the electrode, and then set the electrode (not shown) on the opposite end of the electrode, and apply PR power to this PR electron microscope, as shown in Figure 5. , The forward current ρ and the reverse current 々 'lR' interact with a pulsating pulsating current; specifically, in the blind hole 24 — 一 ----------------- (please first Read the notes on the back and fill in this page) J ^ yZ94 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 B7 V. Description of the invention (6) The direction of the filling metal is passed with a forward current F, so that the anode and cathode are within the specified The cycle of is reversed; in the opposite direction to the forward current F, electroplating is applied due to the pulsating current flowing through the reverse current F. According to PR electroplating, as shown in the drawing (c), the stirring effect of the plating solution is difficult to reach near the bottom of the blind hole 24 ′. The metal can be filled with a metal film 28 such as copper. Under these PR plating conditions, the current density (Fd) of the forward current is typically 0.5 to 2 A / dm2, and the current density (Rd) of the reverse current (R) is i 5 to 10 A / dm2. Typically, the ratio (Fd / Rd) of the current density (Fd) of the forward current (ρ) to the current density (Rd) of the reverse current (R) is 1/5 to 1/1.
Fd/ Rd小於1 / 5，則由於逆向電流的剝離作用過強 ’表面易於粗糙，充填性亦降低。If Fd / Rd is less than 1/2, the peeling effect due to the reverse current is too strong. The surface is easy to be rough and the filling property is also reduced.
Fd/Rd大於1/1，則由於逆向電流的效果減小。此 種情形，如要使逆向電流的效果增大，雖可延長逆向電流 的外加時間（impresed time)，但使PR電鍍時間延長而不佳 〇 ，、型的疋正向電流的通電時間【Ft】（microsecond;ms) 與逆向電流的通電時間【Rt】（ms)之比（Ft/Rt)即pR週期 為 10/3 〜10/0.1 〇If Fd / Rd is greater than 1/1, the effect of reverse current is reduced. In this case, if the effect of the reverse current is to be increased, although the impresed time of the reverse current can be extended, the PR plating time is prolonged and is not good. ] (Microsecond; ms) and the reverse current energizing time [Rt] (ms) ratio (Ft / Rt), that is, the pR period is 10/3 to 10 / 0.1 〇
Ft/Rt小於10/3 ’則由於逆向電流的剝離作用過強 ，而析出優先於剝離致充填效率降低。再者，PR電鍍時 間過延長外，表面的凹凸亦易於增大而不佳。If Ft / Rt is less than 10/3 ′, the peeling effect due to reverse current is too strong, and the precipitation takes precedence over peeling, resulting in a decrease in filling efficiency. Furthermore, in addition to the excessively long PR plating time, the unevenness on the surface tends to increase and is not satisfactory.
Ft/ Rt之的最佳上限，以因應所使用之電鍍裝置而 適宜管理則可。前述之10/0.1僅是一般電鍍裝置上之一 種目標。 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） i 7 _•裝 訂---------·0». (請先閱讀背面之注意事項再填寫本頁) 9 595294The optimal upper limit of Ft / Rt may be appropriately managed in accordance with the plating equipment used. The aforementioned 10 / 0.1 is only one kind of target on a general plating apparatus. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) i 7 _ • Binding --------- · 0 ». (Please read the precautions on the back before filling this page ) 9 595294
PR電鍍用鍍液，可以使用市面出售之PR電解用鍍液 〇 由此。在盲孔24内充填銅等金屬時，甴於以PR電解 在盲孔24内所形成的金屬皮膜之金屬作為充填，雖是在小 徑化且鍍液的攪拌效果，難於達及盲孔24的底部附近，仍 可以充分的速度充填金屬。 但是，PR電鍍中，如第1圖（c)所示，鍍液的攪拌效果 從難於達及之盲孔24底部附近，至鍍液的攪拌.效果易於達 及之盲孔24開口部附近，隨著接近於金屬皮膜28 ,金屬的 充填速度降低。 因此本發明中，於鍍液的攪拌效果可達及的範圍， 由於比PR電鍍的電鏡時間快速之直流電鍵，就如第1圖（d) 所示，在盲孔24的殘餘部份之開口部附近的凹部，充填金 屬形成金屬層30。 由此，從PR電鍍切換為直流電鑛的時期，雖以盲孔24 的開口徑等而異，由於PR電鍍所成之盲孔24内的約i/2 体積，以PR電鍍形成的金屬皮膜28之金屬充填時為佳。 此後的盲孔24内之金屬充填，則以直流電鍍施行。 直流電鍍中，可採用一般的直流電鍍所採用的電鍍 條件，而鍍液亦可使用一般的直流電鍍所使用之鍍液。 如第1圖（d)所示，在盲孔24，由於卩尺電鍍形成之金屬 皮膜28上，既有由於直流電鍍形成的金屬層3〇積層而形成 介質，亦實質的在金屬層30的表面形成平坦面。因此，絕 緣性樹脂層上的薄膜金屬層26、金屬皮膜28、金屬層3〇積 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公 (請先閱讀背面之注意事項再填寫本頁) · 11-----訂·------1 經濟部智慧財產局員工消費合作社印製 10 595294 五、發明說明（8 ) 層所成的積層体，亦可施以鑄型（六夕一二 > 夕、、，Patterning) 形成導体模組等。 峰 或在絶緣性樹脂層20的盲孔24形成之含有介質的端 面之面’為使其形成更為平坦面，就如第1圖（e)所示，將 薄膜金屬層26、金屬皮膜28及金屬層30，施以研磨成為規 定的厚度。此後，由於在極為平坦化的平坦面形成導体模 組，故可形成極為微細之導体模組等。 又’絕緣性樹脂層20的另一面側之金屬箔22，雖亦 可利用金屬箔22形成導体模組等，但為要求絕緣性樹脂層 20的另一面側之平坦性時，如第i圖（e)所示，於可用蝕刻 .去除金屬箔22。 訂 圖面簡單說明 第1圖係說明有關本發明介質充填方法之一例的工程 圖。 第2圖係半導体裝置所使用的基板之部份斷面圖。 第3圖係說明習知的介質充填方法之工程圖。 第4圖係說明在小徑化盲孔，僅以直流電鍍充填金屬 時的狀態之部份擴大斷面圖。 第5圖係說明使用於PR電鍍之脈動電流的說明圖。 第0圖係說明在小徑化盲孔’僅以pR電鑛充填金屬時 的狀態之部份擴大斷面圖。 實施發明之最佳態樣 實施例1 (1)介質形成用基板之製作 本紙張尺度適用中國國家標準（CNS)A4規格（2】0 X 297公釐） 595294 A7 B7As a plating solution for PR electroplating, a commercially available plating solution for PR electrolysis can be used. When filling a metal such as copper in the blind hole 24, the metal that is immersed in the metal film formed by the PR electrolysis in the blind hole 24 is used as a filler. Although the diameter is reduced and the effect of the plating solution is agitated, it is difficult to reach the blind hole 24. Near the bottom, you can still fill the metal with sufficient speed. However, in PR electroplating, as shown in FIG. 1 (c), the stirring effect of the plating solution ranges from the bottom of the blind hole 24 that is difficult to reach to the stirring of the plating solution. The effect is easy to reach near the opening of the blind hole 24. As it approaches the metal film 28, the filling speed of the metal decreases. Therefore, in the present invention, in the range that the stirring effect of the plating solution can reach, because the DC key is faster than the electron microscope time of the PR plating, as shown in FIG. 1 (d), the opening in the remaining part of the blind hole 24 is opened. The concave portion near the portion is filled with metal to form the metal layer 30. As a result, although the period of switching from PR plating to DC power mining varies depending on the opening diameter of the blind hole 24, etc., due to the approximately i / 2 volume in the blind hole 24 formed by PR plating, the metal film 28 formed by PR plating It is better to fill with metal. Thereafter, the metal filling in the blind hole 24 is performed by DC plating. In DC plating, the plating conditions used in general DC plating can be used, and the plating solution can also be used as the plating solution used in general DC plating. As shown in FIG. 1 (d), on the metal film 28 formed by the ruler plating on the blind hole 24, the metal layer 30 formed by the DC plating is used to form a dielectric, and the metal layer 30 is also substantially formed on the metal layer 30. The surface forms a flat surface. Therefore, the thin-film metal layer 26, metal film 28, and metal layer on the insulating resin layer are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male) (please read the precautions on the back before filling in this paper) Page) · 11 ----- Order · ------ 1 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 595294 V. Description of the invention (8) The laminated body formed by the layer can also be cast (Six eve or two> Pattern, etc.) to form a conductor module, etc. A peak or a medium-containing end face formed in the blind hole 24 of the insulating resin layer 20 is formed to make the flatter surface. As shown in Fig. 1 (e), the thin-film metal layer 26, the metal film 28, and the metal layer 30 are polished to a predetermined thickness. After that, since the conductor module is formed on an extremely flat flat surface, it can be formed. Very fine conductor module, etc. The metal foil 22 on the other side of the insulating resin layer 20 can also be used to form a conductor module, but it is required to be on the other side of the insulating resin layer 20. For flatness, as shown in Figure i (e), it can be etched and removed. Belongs to foil 22. Brief description of drawing surface. Fig. 1 is an engineering drawing illustrating an example of a method for filling a dielectric of the present invention. Fig. 2 is a partial cross-sectional view of a substrate used in a semiconductor device. The engineering drawing of the dielectric filling method is shown in Figure 4. Figure 4 is an enlarged cross-sectional view showing the state of the small-diameter blind hole when only metal is filled with DC plating. Figure 5 is a diagram showing the pulsating current used in PR plating. Explanatory drawing. Fig. 0 is a partially enlarged cross-sectional view illustrating a state in which a small-diameter blind hole is' filled with metal only by pR power ore. The best mode for carrying out the invention. Example 1 (1) Substrate for dielectric formation This paper is made in accordance with China National Standard (CNS) A4 (2) 0 X 297 mm. 595294 A7 B7
五、發明說明（9 ) 經濟部智慧財產局員工消費合作社印制衣 在銅箔的一面側以厚度30//m之聚亞胺基樹脂、環氧 基樹脂、卩叩树脂專樹脂薄膜積層或以樹脂塗布後，由碳 酸雷射作成以底面為銅箔面所形成之盲孔。該盲孔為開口 徑90/zm，低部徑70//m，深度3〇/zm的物件。 其次，盲孔的於被開口的開口面側，且在含有盲孔 的内壁面之樹脂層面上，以化學電鍍形成厚度約2//m之 銅薄膜層後’切斷成40mm X 40mm之角狀作為介質形成用 基板。 (2) 電鍍裝置 介負开> 成用基板施以直流電鑛，盲孔内欲充填銅時 在4公升之電解槽裝有規定量的直流電解用鍍液内， 浸潰 介質形成用基板，以介質形成用基板的銅箔為陰極 ，同時以50麵X 200腿的銅板為另一端之陽極。 介質开> 成用基板施以PR電鍵，如要在含有盲孔内壁 面的盲孔之開口側形成銅皮模層時，在4公升電解槽裝有 規定量的PR電解用鍍液内，浸潰介質形成用基板，以介 質形成用基板的銅II為電極之_端，同時以⑽咖X2〇〇mm 的銅板為另一端之電極。 再者，電解槽的鍍液為要維持其液溫為25。〇,而由 幫浦之空氣攪拌而施以攪拌。 (3) 電鍍液 PR電解用鍍液及直流電解用鍍液，均使用市面出 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公复） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 12 595294 經濟部智慧財產局員工消費合作社印製 A7 07 五、發明說明（i〇 ) 的鍍液。該鍵液如下示。 ① pk電解用鍍液；「CuprapulseS3」（Atotech公司製） ② 直流電解用鍍液；「Cu-Brite VF」（Ebara Udylite公 司製） 在製成的介質形成用基板之盲孔，以PR電錢及直流 電鍍充填銅金屬。 首先’在4公升之電鍍槽裝有前述的pR電解用鍍液内 ，浸潰介質形成用基板，以介質形成用基板的銅箔為電極 之一端，且以50mm X 200腿的銅板為另一端之電極而施以 PR電鍍。 此PR電鐘中，正向電流（F)的電流密度（Fd)為1·〇Α/ dm2，而以該外加時間（pt)為1〇ms。逆向電流（R)的電流密 度（Rd)為l.OA/dm2，而以該外加時間（Rt)為02ms。即以 Fd/Rd= 1，Ft/Rt= 50。 前述的PR電鍍施行75分鐘，形成由約15em之銅所成 的金屬皮膜層。此金屬皮膜層的厚度約為盲孔之深度（3〇 // m)之1/2厚度。 施行PR電鍍之介質形成用基板的盲孔之斷面，若以 顯微鏡觀察，就如第丨圖卜)所示，盲孔的約1/2体積被銅 所充填。 其次，將施行PR電鍍之介質形成用基板，浸潰於前 述的4公升之電鍍槽裝有直流電解用鍍液中，此介質形成 用基板的銅箔為陰極，且以50mm X 200腿的銅板為陽極而 施行直流電鑛。 本紙張尺度適用中國國豕標準（CNS)A4規格do X 297公釐） I, j --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 13 595294 五、發明說明（H ) 此直流電鍍中，以電流密度為1·〇Α/dm2，施以直漭 電錢15分鐘。 施行直流電鍍之介質形成用基板的盲孔之斷面，若 以顯微鏡觀察，就如第丨圖“)所示，盲孔完全被鋼所充填 於形成之介質的露出表面，呈為實質的平坦。 、 實施例2 相同於實施例1 ,依據本發明實施介質之充填。但是 ’ 電鑛的條件如下述。 正向電流 電流密度·· Fd= lA/dm2 外加時間：Ft= l〇ms 逆向電流 電 役度· Rd: 外加時間：Rt= lms 即以 Fd/Rd= 1/3 , Ft/Rt= 10。PR電鍍時間為 ι13 分鐘。其他條件如同實施例1。 經濟部智慧財產局員工消費合作社印製 施行PR電鍍之介質形成用基板的盲孔之斷面，若以 顯微鏡觀察，就如第1圖⑷所示，如同實施例1，盲孔的 約1 / 2体積被銅所充填。 其次’相同於實施例1，施行直流電鍍。 施行直流電鍍之介質形成用基板的盲孔之斷面，若 以顯微鏡觀察，就如第1圖（d)所示，如同實施例1，盲孔 完全被銅所充填，於形成之介質的露出表面，呈為實質的 平坦。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） 14 595294 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（I2 實施例3 相同於實施例1，依據本發明實施介質之充填。但pR 電鍍條件如下述。 正向電流 電流密度：Fd= lA/dm2 外加時間：Ft = 1 〇ms 逆向電流 電流 e 度· 外加時間：Rt=〇.2ms 即以 Fd/Rd = 1 / 2，Ft/Rt。50。PR電鍍時間為 77 分鐘。其他條件如同實施例1。 施行PR電鍍之介質形成用基板的盲孔之斷面，若以 顯微鏡觀察，就如第i圖⑷所示，如同實施例i，盲孔的 約1/2体積被銅所充填。 其次，相同於實施例1，施行直流電鍍。 施行直流電鍍之介質形成用基板的盲孔之斷面，若 乂…員微叙觀察’就如第1圖（d)所示，如同實施例1，盲孔 凡全被銅所充填，於形成之介質的露出表面，呈為實質的 平坦。 實施例4 相同於實施例1，依據本發明實施介質之充填。但PR 電艘條件如下述。 正向電流 電流密度：Fd二lA/dm2 (CNS)A4規格（2〗〇 X 297公釐） I---^----- (請先閱讀背面之注意事項再填寫本頁) tj--------0V. 15 595294 五、發明說明（13V. Description of the invention (9) The clothing printed by the employees' cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs shall be laminated on one side of the copper foil with a thickness of 30 // m of a polyimide-based resin, epoxy-based resin, or resin resin. After coating with resin, a blind hole formed by using a carbonic acid laser with the bottom surface as a copper foil surface was formed. The blind hole is an object with an opening diameter of 90 / zm, a lower diameter of 70 // m, and a depth of 30 / zm. Next, on the side of the opening surface where the blind hole is opened, and on the resin layer of the inner wall surface containing the blind hole, a copper thin film layer with a thickness of about 2 // m is formed by chemical plating, and then cut to an angle of 40mm X 40mm. It is used as a substrate for medium formation. (2) Electrolytic plating of the electroplating device > The substrate to be applied is a direct current ore. When copper is to be filled in the blind hole, a 4 liter electrolytic cell is filled with a predetermined amount of a plating solution for direct current electrolysis, and the substrate for immersing the medium is immersed. The copper foil of the substrate for dielectric formation is used as the cathode, and the copper plate with 50 sides and 200 legs is used as the anode at the other end. The dielectric substrate is applied with a PR key. If a copper mold layer is to be formed on the open side of the blind hole containing the inner wall surface of the blind hole, a predetermined amount of plating solution for PR electrolysis is installed in a 4 liter electrolytic cell. The substrate for the dielectric formation is impregnated, and the copper II of the substrate for the dielectric formation is used as the one end of the electrode, and the copper plate with a thickness of 200 mm is used as the electrode on the other end. In addition, the plating bath of the electrolytic cell was maintained at a liquid temperature of 25. 〇, and stirred by the air of pump. (3) The electroplating solution for PR electroplating bath and DC electroplating bath are both available on the market. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 public reply) ---------- -Install -------- Order --------- (Please read the precautions on the back before filling this page) 12 595294 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 07 V. Invention Explanation (i〇) of the plating solution. The key fluid is shown below. ① Electroplating solution for pk electrolysis; "CuprapulseS3" (manufactured by Atotech) ② Electroplating solution for direct current electrolysis; "Cu-Brite VF" (manufactured by Ebara Udylite) The blind holes of the substrate for medium formation are made with PR electricity And DC plating filled copper metal. First, the above-mentioned pR electrolysis bath is installed in a 4 liter plating bath, and the substrate for dielectric formation is immersed. The copper foil of the substrate for dielectric formation is used as one end of the electrode, and a copper plate of 50 mm X 200 legs is used as the other end. The electrodes are subjected to PR plating. In this PR clock, the current density (Fd) of the forward current (F) is 1.0 OA / dm2, and the applied time (pt) is 10 ms. The current density (Rd) of the reverse current (R) is 1.0A / dm2, and the applied time (Rt) is 02ms. That is, Fd / Rd = 1, Ft / Rt = 50. The aforementioned PR plating was performed for 75 minutes to form a metal film layer made of copper of about 15em. The thickness of the metal film layer is about 1/2 of the depth of the blind hole (30 // m). The cross section of the blind hole of the substrate for forming a dielectric for performing PR plating, if observed under a microscope, is as shown in Fig. 丨). About 1/2 of the volume of the blind hole is filled with copper. Next, the substrate for forming a medium for PR electroplating was immersed in the aforementioned 4 liter plating tank and was filled with a plating solution for direct current electrolysis. The copper foil of this substrate for medium formation was used as a cathode, and a copper plate of 50 mm X 200 legs was used. Direct current mines for anodes. This paper size applies to China National Standard (CNS) A4 specification do X 297 mm) I, j -------- Order --------- (Please read the precautions on the back before filling (This page) 13 595294 V. Description of the invention (H) In this DC plating, a current density of 1 · 〇Α / dm2 is applied, and direct electricity is applied for 15 minutes. The cross section of the blind hole of the medium forming substrate for DC plating is observed by a microscope, as shown in Figure 丨. The blind hole is completely filled with steel on the exposed surface of the formed medium, and it is substantially flat. Example 2 is the same as Example 1, and the filling of the medium is carried out according to the present invention. However, the conditions of the power ore are as follows. Forward current and current density · Fd = lA / dm2 Application time: Ft = 10ms Reverse current Electricity degree · Rd: Additional time: Rt = lms, that is, Fd / Rd = 1/3, Ft / Rt = 10. The PR plating time is 13 minutes. Other conditions are the same as in Example 1. Employees ’Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs The cross section of the blind hole of the substrate for forming a medium for PR plating is printed. If it is observed with a microscope, it is as shown in Fig. 1 (a). As in Example 1, about 1/2 of the volume of the blind hole is filled with copper. 'Same as in Example 1, DC plating was performed. The cross section of the blind hole of the substrate for forming a medium for DC plating was observed with a microscope, as shown in Figure 1 (d). As in Example 1, the blind hole was completely Filled with copper and exposed to the formed medium The surface of the paper is substantially flat. The paper size is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 Gongchu) 14 595294 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (I2 Example 3 The same as in Example 1, the filling of the medium is carried out according to the present invention. However, the pR plating conditions are as follows. Forward current density: Fd = lA / dm2 Application time: Ft = 1 0ms Reverse current current e Degree · Application time: Rt = 0.2ms, that is, Fd / Rd = 1/2, Ft / Rt. 50. The PR plating time is 77 minutes. Other conditions are the same as in Example 1. The cross section of the blind hole of the substrate for forming a dielectric for PR plating, If viewed with a microscope, as shown in Figure i, as in Example i, about 1/2 of the volume of the blind hole is filled with copper. Second, the same as in Example 1, DC plating is performed. The medium is formed by DC plating. Using the cross-section of the blind hole in the substrate, if you look at it as shown in Figure 1 (d), as in Example 1, the blind hole will be filled with copper on the exposed surface of the formed medium. Substantially flat. Example 4 is the same as In Example 1, the filling of the medium is carried out according to the present invention. However, the conditions of the PR electric boat are as follows. Forward current density: Fd 2A / dm2 (CNS) A4 specification (2) 0X 297 mm I --- ^ ----- (Please read the notes on the back before filling this page) tj -------- 0V. 15 595294 V. Description of the invention (13
經濟部智慧財產局員工消費合作社印f 外加時間：Ft=10ms 逆向電流' 電 i|L 在度：Rd= 3A/dm2 外加時間：Rt=0.2ms 即以 Fd/Rd = 1/3，Ft/Rt = 50。PR電鍍時間為 79 分鐘。其他條件如同實施例1。 施行PR電鍍之介質形成用基板的盲孔之斷面，若以 顯微鏡觀察，就如第1圖（(〇所示，如同實施例i ,盲孔的 約 1/2体積被銅所充填。 其次，相同於實施例1，施行直流電鍍。 行直流電鑛之介質形成用基板的盲孔之斷面，若 以顯微鏡觀察’就如第1圖（句所示，如同實施例1 ,盲孔 芩全被銅所充填，於形成之介質的露出表面，呈為實質的 平坦。 比較例1 實施例中，施行以PR電鍍90分鐘，與未施行直流電 鍍之其他實施例1相同，在介質形成用基板的盲孔充填金 屬。 、 完成PR電鍍之介質形成用基板的盲孔之斷面，若以 顯微鏡觀察，盲孔完全未被銅所充填，而露出在形成之介 貝表面之銅的表面，形成有凹狀之窪洞。 產業上利用的可能性 根據本發明，小徑化之盲孔亦可充分充填金屬形成 本纸張尺度適用中國國家標準（CNS)A4規格⑵〇><297公髮） !「-----等 Μ--------^------- !_ (靖先閱讀背面之注意事項再填寫本頁) 16 595294 Λ7 _B7_ 五、發明說明（Η ) 介質，且介質的表面亦可實質的形成平坦面。因此，隨著 導体模組之微細化及多層化，故可因應介質之小徑化的需 求0 元件標號對照 '裝--------訂-I (請先閱讀背面之注意事項再填寫本頁) 10.. .配線基板 12…介質 14…導体模組 20.. .絕緣性樹脂層 22·...金屬箱 24…盲孔 26.. .薄膜金屬層 28.. .金屬皮膜層 30.. .金屬層 經濟部智慧財產局員工消費合作社印製 17 本紙張尺度適用中國國家標準（CNS)A4規格（2】0 X 297公釐）Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Additional time: Ft = 10ms Reverse current 'Electricity i | L Degree: Rd = 3A / dm2 Additional time: Rt = 0.2ms That is Fd / Rd = 1/3, Ft / Rt = 50. PR plating time is 79 minutes. Other conditions are the same as in Example 1. The cross section of the blind hole in the substrate for forming a dielectric for performing PR plating is as shown in FIG. 1 ((0), as in Example i, about 1/2 of the volume of the blind hole is filled with copper. Second It is the same as in Example 1. DC plating is performed. The cross section of the blind hole of the substrate for forming a medium for DC power ore, if viewed under a microscope, is like the figure 1 (sentence, as in Example 1, the blind hole 芩 is entirely copper. The filling was substantially flat on the exposed surface of the formed medium. Comparative Example 1 In the example, PR plating was performed for 90 minutes, which is the same as in the other Example 1 where DC plating was not performed. The hole is filled with metal. The cross-section of the blind hole of the substrate for the dielectric formation of the PR electroplating. If it is observed with a microscope, the blind hole is not filled with copper at all, and the copper surface exposed on the surface of the formed dielectric is concave. According to the present invention, the small-diameter blind holes can be fully filled with metal to form this paper. Applicable to the Chinese National Standard (CNS) A4 specification ⑵〇 > < 297 public release ! `` ----- wait M- ------- ^ -------! _ (Jing first read the precautions on the back before filling out this page) 16 595294 Λ7 _B7_ V. Description of the invention (Η) The medium, and the surface of the medium can also be substantial The formation of a flat surface. Therefore, with the miniaturization and multi-layering of the conductor module, it can respond to the needs of the diameter of the medium. Note on the back page, please fill in this page again) 10 ... Wiring board 12 ... Dielectric 14 ... Conductor module 20. Insulating resin layer 22 ... Metal box 24 ... Blind hole 26 ... Thin-film metal layer 28 .. Metallic film layer 30 .. Metal layer Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 17 Printed on paper This paper applies Chinese National Standard (CNS) A4 specifications (2) 0 X 297 mm
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2000116655 | 2000-04-18 |
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| Publication Number | Publication Date |
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| TW595294B true TW595294B (en) | 2004-06-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090108520A TW595294B (en) | 2000-04-18 | 2001-04-10 | Via filling method |
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| KR (1) | KR20010098480A (en) |
| TW (1) | TW595294B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103140057A (en) * | 2011-12-05 | 2013-06-05 | 三星电机株式会社 | Via hole plating method and printed circuit board manufactured using the same |
-
2001
- 2001-04-09 KR KR1020010018670A patent/KR20010098480A/en not_active Application Discontinuation
- 2001-04-10 TW TW090108520A patent/TW595294B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103140057A (en) * | 2011-12-05 | 2013-06-05 | 三星电机株式会社 | Via hole plating method and printed circuit board manufactured using the same |
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| KR20010098480A (en) | 2001-11-08 |
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