595015 圖式簡單說明 _ * 五、圖式簡單說明 圖式/部份 、’ 第圖為傳統表面黏著型發光二極體(SMD LED)之結構圖 々 一(電路板型) · 第=圖為本發明裸晶式發光二極體之基本結構圖(一) 第三圖為本發明裸晶式發光二極體之基本結構圖(二) f圖為本發明裸晶式發光二極體之基本結構圖(三) f f圖為本發明裸晶式發光二極體之基本結構圖(四) 圖為本發明裸晶式發光二極體與線路板接合之結構圖 七圖為本發明裸晶式發光二極體加網印螢光層之結構圖 八圖為本發明裸晶式發光二極體加上透明罩之結構圖 圖號部份 1、 LED晶粒 2、 封裝樹脂 3、 電路板 4、 晶片基板(氧化鋁單晶) 5、 磊晶發光層 6、 絕緣層 7、 負電極(N極) 8、 正電極(P極)595015 Schematic illustrations _ * 5. Schematic descriptions of Schematics / parts, '' The diagram is the structure diagram of the traditional surface-adhesive light-emitting diode (SMD LED) 々 (circuit board type) · The diagram = The basic structure diagram of the bare-crystal light-emitting diode of the present invention (1) The third diagram is the basic structure diagram of the bare-crystal light-emitting diode of the present invention (ii) The f-picture is the basic structure of the bare-crystal light-emitting diode of the present invention Structure diagram (3) ff diagram is the basic structure diagram of the bare-crystal light-emitting diode of the present invention (four) picture is the structure of the bare-crystal light-emitting diode of the present invention and the circuit board connection diagram Structure of light-emitting diode and screen-printed fluorescent layer. Figure 8 is the structure of a bare-crystal light-emitting diode with a transparent cover according to the present invention. Figure No. 1, LED die 2, packaging resin 3, circuit board 4 Wafer substrate (alumina single crystal) 5. Epitaxial light emitting layer 6. Insulating layer 7. Negative electrode (N pole) 8. Positive electrode (P pole)
第12頁 595015 中文發明摘要(發明名稱:裸晶式發光二極體) 種裸晶式發 製作成表面 可使用,利 單晶(俗稱 用覆晶技術 )保〉幾膜層 或奈米點、 式發光二極 二極體與線 佳、微小化 粒直接 製程即 氧化铭 材,利 (Si02 小透鏡 之裸晶 式發光 散熱性 光二極體,係將發光二極體(L E D )曰 、 V. 白白 黏著型(SMD)之結構’不須再經封裝 用GaN係(藍光)LED晶粒的基板為透明 藍寶石單晶)做為天然之最佳封裝夷 將電極面製作成光反射面,同時鍍一層 ,並製作電極凸塊,在基板面上製作微曰 ί米柱以增強光的輸出,即完成_型 體,不須再做封裝製程,可直彳 路板連接。其特點為省成 容易’可作大功率發光元件。良车-Page 12 595015 Abstract of Chinese Invention (Invention Name: Bare Crystal Light Emitting Diode) A variety of bare crystal hairs can be used on the surface. The single crystal (commonly known as flip-chip technology) is used to protect several layers or nanometer dots. The light-emitting diode is directly oxidized with the fine line and fine particles, which is a bare crystal light-emitting and heat-dissipating light diode (Si02 small lens), which is a light-emitting diode (LED), V. The white-and-white adhesive (SMD) structure 'no longer needs to be packaged with a GaN-based (blue light) LED chip substrate which is a transparent sapphire single crystal) as the best natural package. The electrode surface is made into a light reflecting surface and plated at the same time. One layer, and electrode bumps are made, and micro pillars are made on the surface of the substrate to enhance the output of light, that is, the body is completed, and there is no need to perform a packaging process, and the circuit board can be connected directly. Its feature is that it is easy to save and can be used as a high-power light-emitting element. Good car-
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0--——- - 餐 ; 广、 ;-._ —]." : 案號92101158_年月曰 修正__ i、發明說明(3) 三、發明内容 本案創作發明裸晶式發光二極體,就是直接將led晶 粒製作形成SMD元件,不須經封裝製程即可使用,此創作 乃是將大功率晶粒(ρ 〇 w e r c h i p )結合覆晶接點(F 1 i p c h i p ),利用G a N系列L E D之基板採用透明之氧化鋁單晶 (Sapphire)基板作為光發出之透明封裝基材,在LED晶 粒之另一面則製作光反射電極,使光能全部反射至氧化銘 單晶基板面發出光,同時製作3丨02折射層及做微小透鏡, 來增加光的輸出亮度或奈米點、奈米柱,即覆晶型LED晶 粒變成SMD LED元件,不須再經封裝製程(傳統覆晶型LED 須再封裝成SMD元件),即可以裸晶之SMI) LED型態可直接 與其他線路板組合。 在本案中因發光二極體基板必須採用透光基板 極必須製作在同一面,目前電極在同一面的製程方式,只 有以氧化鋁單晶基板製作出的氮化鎵(GaN )系之藍 '綠 光LED元件,另有以Sic單晶基板因本身基材就是導體,因 此以SiC為基板的藍光LED通常正負電極在不同面,紅光 LED正負電極也在不同而, 私4 L牡个U面,因此本案發明均必須設計使其 電極均在同一面才能會始J H Jr ^ 貫施,廷疋本發明最大的特點之一。 LED光的輸出只有弁太台反垒「 . 九在臣时界角(CriticalAngle) 0 态 ^ ^ ^ ^ 七 〜sin η2/ηι ( ηι為基板材料折射 (Q , . 般為1) 在本案中採藍寶石 (Sapphire)為基板,里批也ι 。 , = ·…71 n .其折射率為丨· 8,故光輸出之臨界 角 0 sin γγγλ_〇〇 - u. bbb -, dd. 75 ,所以 LED若不封0 --——--Meal; Cantonese,; -._ —]. &Quot;: Case No. 92101158_Year Month and Amendment __ i. Description of the Invention (3) III. Summary of the Invention The present invention creates a bare-crystal light-emitting diode 2 The polar body is directly formed from the LED die to form an SMD component, which can be used without packaging. This creation is to combine high-power die (ρ 〇werchip) with flip-chip contacts (F 1 ipchip), using G a N series LED substrate uses transparent alumina single crystal (Sapphire) substrate as the transparent packaging substrate for light emission, and a light reflection electrode is made on the other side of the LED die, so that all the light energy is reflected to the oxidized single crystal substrate The surface emits light, and at the same time, a 3 丨 02 refractive layer and a micro lens are made to increase the light output brightness or nano-points and nano-pillars, that is, the flip-chip LED die becomes an SMD LED element, without further packaging process ( Traditional flip-chip LEDs need to be repackaged into SMD components, that is, bare-chip SMI LED types can be directly combined with other circuit boards. In this case, since the light-emitting diode substrate must be made of a light-transmitting substrate, the electrodes must be made on the same side. At present, the electrode is on the same side. The only manufacturing method is the gallium nitride (GaN) series blue made from an alumina single crystal substrate. Green light LED elements, and Sic single crystal substrates, because the substrate itself is a conductor, so blue LEDs with SiC as substrates usually have positive and negative electrodes on different sides, and red LEDs have different positive and negative electrodes. Private 4 L U Therefore, the inventions in this case must be designed so that their electrodes are on the same side so that JH Jr can be applied. This is one of the biggest features of the invention. The output of LED light is only 弁 太 台 anti-base ". 九 在 臣 时 界 角 (CriticalAngle) 0 State ^ ^ ^ ^ Seven ~ sin η2 / ηι (ηι is the refraction of the substrate material (Q,. Is generally 1) in this case Sapphire is used as the substrate, and the inner diameter is also ι., = · ... 71 n. Its refractive index is 丨 · 8, so the critical angle of light output is 0 sin γγγλ_〇〇- u. Bbb-, dd. 75, So if the LED is not sealed
第7頁 595015 92101158 _3. 曰 修正 1:1両丽7ίί 裝,採裸晶發光則會因LED發光基材的折射率(1. 8 )與空 氣折射率(1 )有很大的差距,會有部分的光因臨界角較 大而無法射出來,亮度會減小。 L E D晶粒若有封裝會有較多的光輸出,因封裝樹脂 (EPOXY )的折射率為1· 5,光臨界角0 = sin-11· 5/1· 8 = 5 6.44 ° ,因此本案「裸晶式發光二極體」不封裝,若直接 使用會有部分的光因折射率的關係而無法射出,為了解決 以上之缺點,本發明人提出了以下解決方案以增加裸晶 LED的光亮度: 1、 在本案藍寶石基板之發光面上製作許多微小透鏡,以 改變光輸出的折射,同時具有透鏡聚焦功能使光往正 面發射,微小透鏡的製作方法可利用光阻,曝光顯影 後,再經加溫使光阻形成半圓形微小透鏡之構造,如 此可增加光的輸出,其微小透鏡的大小可設定小於 lOOum即可,最理想者為10um左右。 2、 直接在藍寶石基板之發光面上鍍或塗上一層較低折射 率材料,其折射率介於1. 〇〜1. 8間,如Si024透明有 機材料EPOXY、PMMA、PP等,其折射率約在1. 5左右, 亦可增加L E D裸晶光的輸出。 3、 直接在藍寶石基板加工處理使其表面形成微小凹凸 點,以改變光輸出之折射率,若微小的凹凸點尺寸 小於光的波長的話,則光的輸出沒有折射現象大部分 會從基板射出以增加LED的亮度;例如LED藍光波長約 為46 Onm,若基板發光面之凹凸點小於40 Onm的結構,Page 7 595015 92101158 _3. Said modified 1: 1 両 丽 7ί package, the bare crystal luminescence will be because the refractive index of the LED light-emitting substrate (1.8) and the refractive index of the air (1) have a large gap, will Some light cannot be emitted due to the large critical angle, and the brightness will decrease. If the LED die is packaged, it will have more light output. Because the refractive index of the packaging resin (EPOXY) is 1.5, the critical angle of light is 0 = sin-11 · 5/1 · 8 = 5 6.44 °. "Bare-type light-emitting diode" is not packaged. If it is used directly, part of the light cannot be emitted because of the refractive index. In order to solve the above disadvantages, the inventor has proposed the following solution to increase the brightness of the bare-LED. : 1. Make a lot of tiny lenses on the light-emitting surface of the sapphire substrate in this case to change the refraction of light output. At the same time, it has a lens focusing function to emit light to the front. The manufacturing method of tiny lenses can use photoresist. After exposure and development, The heating causes the photoresist to form a semi-circular micro lens structure, which can increase the light output. The size of the micro lens can be set to less than 100um, and the most ideal is about 10um. 2. Plating or coating a layer of lower refractive index material directly on the light-emitting surface of the sapphire substrate, the refractive index is between 1.0 and 1.8, such as Si024 transparent organic materials EPOXY, PMMA, PP, etc., and its refractive index About 1.5, the LED bare light output can also be increased. 3. Directly process the sapphire substrate to form tiny bumps on its surface to change the refractive index of light output. If the size of the tiny bumps is smaller than the wavelength of light, most of the light output will not be refracted. Increase the brightness of LED; for example, the blue light wavelength of LED is about 46 Onm. If the bumps on the light-emitting surface of the substrate are less than 40 Onm,