594001 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（1 ) 發明部份及背景 本發明係有關光學顯微鏡中所用之照明方法及系統， 應用於晶圓檢查及量度系統上，且更明確言之，係有關多 頻帶u v (紫外光）光晶圓照明之方法及系統，用於光學 絲頁微鏡晶圓檢查及量度系統上。 在半導體工業中，光學顯微鏡晶圓檢查及量度系統經 吊用於硏究’發展’及製造砍基礎之晶圓巨。光學顯微鏡 晶圓檢查及量度系統之使用可偵測，分辨，及量度晶圓之 表面佈局之接近特徵，尤其是有關缺陷，圖案，及其他表 面結構。光學顯微鏡晶圓檢查及量度系統之應用之特定實 例包括晶圓缺陷偵測，光覆蓋量度，及光c D (臨界幅度 )量度及控制。晶圓表面佈局之特徵在循晶圓製造之順序 階段所用之品質管制中非常重要。而且，由於大量之資源 花費導致產生新晶圓，且亦在全規模生產階層上，適當之 光學顯微鏡晶圓檢查及量度系統需在技術上可行且強壯， 俾可用於製造環境中。 此後，'' C D或臨界幅度〃一辭意指晶圓上之一結構 在晶圓製造過程中可控制之最小幅度。此後， ''圖案〃一 辭意指晶圓上之一有意或必需之圖案，設計，結構’或構 造，具有可量度之幅度，及 ''缺陷〃 一辭意指晶圓中之一 不完善，諸如晶圓中有一不需要，或無一需要之結構或構 造，亦具有可量度之幅度。更明確言之，半導體工業中之 現技術使用1 8 0 n m作爲晶圓圖案之基準臨界幅度。而 且，一、、致死〃缺陷爲一充分幅度之缺陷，此直接干涉或 J----- ^—A-----裝— (請先閱讀背面之注意事項再填寫本頁) 丨訂 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4 - 594001 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（2 ) 甚至、'致死〃晶圓上之一特定圖案之功能。目前’缺陷正 規約分爲一致死缺陷’如該缺陷爲現用之基準臨界幅度 1 8 0 nm之一半大小，即9 0 n m。在量度應用上，所 需之精確度普通爲此臨界幅度之1 〇 %以內’即小於2〇 n m。顯然，在新晶圓之發展及製造過程之早期’具有偵 測致死及其他晶圓缺陷’以及執行邊緣偵測之能力極爲重 要。 特定晶圓檢查或量度系統中所用之特定照明方法及系 統強力決定自晶圓檢查或量度系統所獲得之結果之整個品 質。光學顯微鏡晶圓檢查及量度系統中所用之現照明方法 及系統包括使用寬頻帶白光及單（窄）頻帶U V光照明晶 圓。普通知道窄頻帶UV光在波長之充分窄頻帶上亦稱爲 ''單色〃。本發明與術語 ''窄頻帶〃及 ''單色〃 U V光之 用法一致。白光照明指在可見光譜中之寬頻帶照明。晶圓 檢查及量度光學顯微鏡包含特別設計之燈（例如包含高或 低壓水銀蒸氣與貴氣體混合）’此產生在4 0 0 — 8〇〇 nm之可見光譜範圍中之寬頻帶白光，及具有在2 5 0 — 5 0 0 nm之光譜範圍中之窄頻帶單色UV光，以及其他 光譜，包括例如亦在可見光譜範圍中之少數窄頻帶。 光學顯微鏡中所用之照明源之型式爲決定影像解像度 之一重要因素，在此，依據標準光學定義，影像解像度意 爲’如一黑_物體或結構間之光強度到達影像幅度，亮度 ’或強度之0 · 7 0 7，分辨該二物件（如在參考文件中 所定義，、、光學原理：光之傳播，干涉，及繞射之電磁理 (請先閱讀背面之注意事項再填寫本頁) -«· 裝 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱） -5- 594001 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（3 ) 論〃第6版，Born，Max，及Wolf，Emil所著，劍橋大 學出版社，1 9 9 8 )。 由使用光學顯微鏡檢查或量度晶圓所獲得之晶圓影像 受繞射之不利影響，在此，由特定照明光源之光波及晶圓 表面上之物件或結構（例如圖案或缺陷）間之相互作用引 起繞射。在此，繞射效應視爲系統雜訊，此直接降低晶圓 影像之品質。在一特定之晶圓表面佈局上，繞射之程度爲 顯微鏡光學裝置（即透鏡系統或物鏡孔徑）及照明光譜（ 即白光對U V光，寬頻帶對單色照明）之函數。單色U V 光照明晶圓較之寬頻帶白光照明晶圓產生較高之影像解像 度，然而，與寬頻帶白光照明相較，單色U V光照明引起 較大之繞射效應，在具有相互接近之多物件或結構（稱爲 圖案及或缺陷）之晶圓上特別明顯。 在光學顯微鏡晶圓檢查及量度系統中，視程序之實際 目標而定，通常需設計一種晶圓照明方法及系統，此能充 分偵測，分辨，及臨界幅度量度在晶圓圖案鄰近，甚至在 其他晶圓缺陷或圖案鄰近之晶圓缺陷或圖案（例如，檢查 或量度一簇晶圓缺陷或圖案）。在此情形，除個別缺陷及 圖案之標準影像解像度外，繞射效應在變換影像資料上愈 爲重要。除普通所用之單個物件或結構影像解像度外，受 繞射效應限制之晶圓之影像分析之結果之適當特徵包括使 用''系統解像度〃 一辭，具有距離單位，且在晶圓檢查或 量度技術上普通定義爲在同一晶圓上之一第一缺陷或圖案 及另一缺陷或圖案之一邊緣間之距離，由此，第一缺陷或 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6 - (請先閱讀背面之注意事項再填寫本頁)594001 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the Invention (1) Part of the invention and background The present invention relates to the lighting method and system used in optical microscopes, and is applied to wafer inspection and measurement systems, and More specifically, it relates to a method and system for illuminating multi-band UV (ultraviolet) light wafers, which are used in optical wire sheet micromirror wafer inspection and measurement systems. In the semiconductor industry, wafer inspection and measurement systems for optical microscopes are used to investigate 'development' and manufacture wafer giants. The use of an optical microscope wafer inspection and measurement system can detect, resolve, and measure the close features of the wafer's surface layout, especially related to defects, patterns, and other surface structures. Specific examples of applications of the optical microscope wafer inspection and measurement system include wafer defect detection, light coverage measurement, and light CD (critical amplitude) measurement and control. The characteristics of wafer surface layout are important in the quality control used in the sequential stages of wafer manufacturing. In addition, due to the large amount of resource expenditures leading to the creation of new wafers, and also at the full-scale production level, appropriate optical microscope wafer inspection and measurement systems need to be technically feasible and robust, and should not be used in manufacturing environments. Hereafter, the term "CD or critical amplitude" means the smallest amplitude that a structure on a wafer can control during the wafer manufacturing process. Hereafter, the word `` pattern '' means an intentional or necessary pattern, design, structure, or structure on a wafer, with a measurable amplitude, and the term `` defect '' means one of the wafers is incomplete For example, if a wafer has a structure or structure that is not needed, or not needed, it also has a measurable range. More specifically, current technology in the semiconductor industry uses 180 nm as the reference critical amplitude for wafer patterns. Moreover, a fatal defect is a defect of sufficient magnitude. This direct interference or J ----- ^ —A ----- install— (Please read the precautions on the back before filling this page) 丨 Order This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -4-594001 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy One of the functions of a specific pattern. At present, the “defective rule is divided into uniform dead defects”. If the defect is one and a half sizes of the current reference critical amplitude of 180 nm, that is, 90 nm. In the measurement application, the required accuracy is usually within 10% of this critical amplitude ', that is, less than 20 nm. Obviously, the ability to detect lethal and other wafer defects and perform edge detection early in the development and manufacturing of new wafers is extremely important. The particular lighting method and system used in a particular wafer inspection or measurement system strongly determines the overall quality of the results obtained from the wafer inspection or measurement system. Existing illumination methods and systems used in optical microscope wafer inspection and measurement systems include the use of wideband white light and single (narrow) band UV light to illuminate the wafer. It is generally known that narrow-band UV light is also referred to as `` monochrome '' over a sufficiently narrow band of wavelengths. The invention is consistent with the usage of the terms `` narrowband '' and `` monochrome '' U V light. White light illumination refers to wide-band illumination in the visible spectrum. Wafer inspection and measurement optical microscopes include specially designed lamps (such as those containing high or low pressure mercury vapors mixed with noble gases) 'this produces a wide band of white light in the visible spectral range of 400-800 nm, and Narrowband monochromatic UV light in the spectral range of 250 to 500 nm, as well as other spectra, including, for example, a small number of narrow frequency bands also in the visible spectral range. The type of illumination source used in an optical microscope is an important factor in determining image resolution. Here, according to the standard optical definition, image resolution means' such as the intensity of light between a black object or a structure reaching the image amplitude, brightness, or intensity. 0 · 7 0 7, distinguish between the two objects (as defined in the reference document, optical principles: electromagnetic propagation of light, interference, and diffraction (please read the precautions on the back before filling out this page)- «· The paper size of the paper is applicable to the Chinese National Standard (CNS) A4 (21〇X 297 public love) -5- 594001 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (3) Discussion 6 Edition, Born, Max, and Wolf, Emil, Cambridge University Press, 1898). Wafer images obtained by inspecting or measuring a wafer with an optical microscope are adversely affected by diffraction. Here, the interaction between light from a specific illumination source and objects or structures (such as patterns or defects) on the wafer surface Causes diffraction. Here, the diffraction effect is regarded as system noise, which directly reduces the quality of the wafer image. On a particular wafer surface layout, the degree of diffraction is a function of the microscope optics (ie, the lens system or objective lens aperture) and the illumination spectrum (ie, white light vs. UV light, and wideband vs. monochromatic lighting). Monochromatic UV light illumination wafers have higher image resolution than wideband white light illumination wafers. However, compared to wideband white light illumination, monochromatic UV light illumination causes greater diffraction effects, which have a close effect on each other. This is especially noticeable on wafers with multiple objects or structures (called patterns and or defects). In the optical microscope wafer inspection and measurement system, depending on the actual goals of the program, a wafer lighting method and system usually needs to be designed, which can fully detect, distinguish, and measure critical amplitudes in the vicinity of the wafer pattern, and even in the vicinity of the wafer pattern. Other wafer defects or patterns. Adjacent wafer defects or patterns (for example, to inspect or measure a cluster of wafer defects or patterns). In this case, in addition to the standard image resolution of individual defects and patterns, the diffraction effect becomes more important in transforming image data. Appropriate characteristics of the results of image analysis of wafers limited by diffraction effects include the use of the term `` system resolution '', with distance units, and in wafer inspection or measurement techniques The above is generally defined as the distance between one first defect or pattern and the edge of another defect or pattern on the same wafer. Therefore, the first defect or this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -6-(Please read the notes on the back before filling this page)
594001 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（4 ) 圖案之偵測或量度之精確度在統計上高，即使有由於另一 圖案缺陷之邊緣引起發生繞射效應亦然。更明確言之，例 如，有關晶圓缺陷偵測系統，系統解像度指同一晶圓上之 一第一缺陷及另一缺陷或圖案之一邊緣間之距離，由此， 第一缺陷之偵測可能率在統計上有意義。 晶圓檢查系統之特定方法所屬之系統解像度之數値隨 系統解像度之增加而減小，具有距離之單位，例如n m， 由此，可在距一圖案或另一缺陷之一邊緣5 0 0 nm之距 離處分辨之一缺陷表示一方法具有較之可在距一圖案或另 一缺陷之邊緣1 0 0 0 n m之較大距離處分辨一缺陷爲高 之系統解像度。在量度上增加系統解像度之一方法爲使用 較低繞射效應之晶圓檢查或量度方法及系統，從而導致有 效減小缺陷或圖案之邊緣大小。如此，有關具有多物件或 結構（即圖案’缺陷）之之一晶圓之影像品質，需同時考 慮到及取決於解像度有關之三參數之最佳化：1 )單個物 件或結構影像解像度，2 )繞射效應，及3 )系統解像度 ，俾適當設計有效之晶圓照明方法及系統，用於特定光學 顯微鏡晶圓檢查系統。 廣泛知道在使用寬頻帶晶圓照明之光學顯微鏡晶圓檢 查及量度系統之方法及系統中，與使用窄頻帶或單色晶圓 照明之方法相較，繞射效應可量度較低。在實際上，寬頻 帶照明由高斯形輪廓有效調變單物件（例如一圖案或缺陷 )影像。此降低第一繞射階對比’且結果，與單色照明（ 此使影像含有一個以上之繞射階對比）相較，總影像對比 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）不 ----1-------------"^訂--------T--· (請先閲讀背面之注意事項再填寫本頁) Λ 594001 經濟部智慧財產局員工消費合作社印製 A7 B7 _ 五、發明說明（5 ) 或系統解像度提高。爲此，晶圓檢查或量度系統之最近方 法及系統包含使用寬頻帶白光晶圓照明。 有關光學顯微鏡晶圓檢查及量度系統所用之現使用之 晶圓照明方法及系統有若干重大之限制。晶圓之現臨界幅 度約爲1 8 0 n m，然而晶圓結構之經常分析在缺陷偵測 上下降至約9 0 n m，及在量度上低於約2 0 n m，包括 在光覆蓋應用上在1 0 n m以內。迄今，有關寬頻帶白光 照明用於晶圓檢查系統上之方法及系統已足以獲得高品質 及高系統解像度之影像。然而，隨晶圓檢查及量度技術之 進步，臨界幅度進一步減小，致更難以使用寬頻帶白光晶 圓照明，維持單個物件或結構之高影像解像度。由於此， 光學顯微鏡晶圓檢查及量度系統中所用之照明方法及系統 需自以寬頻帶白光照明爲基礎轉移至較低波長，較高能量 之光源晶圓照明，諸如U V光照明。故此，具有以U V光 源爲基礎之一種照明方法及系統，用於光學顯微鏡晶圓檢 查及量度系統上，實爲需要且有用。 有關涉及使用U V光源之照明方法及系統，需克服另 外之限制。例如，較之使用寬頻帶白光源（例如，具有 4 0 0 — 8 0 0 n m之寬頻帶波長範圍之光譜）於晶圓照 明上，由使用單色U V光源（例如，普通使用之3 6 0 — 3 7 0 n m之窄頻帶波長範圍），顯著增加單個物件或結 構之影像解像度。然而，繞射效應隨照明光源，諸如單色 U V光源之增加能量同時增加，導致在晶圓影像之資料中 產生雜訊，引起系統解像度降低。對具有相互接近之多個 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -ft _ (請先閱讀背面之注咅？事項再填寫本頁) « -裝 594001 A7 ___B7___ 五、發明說明（6 ) 缺陷及圖案之晶圓，此現象特別顯著。消除或減少繞射效 應之普通所用之方法不易應用於使用單色u V光源之現晶 圓檢查或量度系統上。例如，可使用干涉計，但此甚緩慢 ’導致低產出，且實施複雑。而且，影像處理技術，諸如 影像之解迴旋繞射環亦不適用於光學顯微鏡晶圓檢查及量 度系統。 用於光學顯微鏡晶圓檢查及量度系統上之一理想晶圓 照明方法及系統涉及使用寬頻帶U V晶圓照明，其特色爲 使用具有在例如2 5 0 — 5 0 0 nm範圍之寬頻帶UV光 源。此一寬頻帶U V光源能以高斯形輪廓有效調變單個物 件或結構，從而降低干涉之繞射效應，導致提高系統解像 度。不幸，寬頻帶U V光源雖理論上可行，在現尙未認定 。已知之U V光源（例如水銀燈）呈現窄頻帶單色光譜（ 例如36〇一 37〇nm，398 — 4〇7nm等）。 密切接近理想寬頻帶U V光源爲使用已知之U V光源 之多頻帶或波長於晶圓照明上。在此情形，單個物件或結 構之解像度優於使用白光照明者，同時繞射效應低於由使 用單色U V光源觀察所獲得之影像中者。故此，有一種多 頻w U V光照明方法及系統’用於光學顯微鏡晶圓檢查及 量度系統上，實爲所需且有用。而且，有在技術上可行， 成本效益高，且強壯之此一晶圓照明之方法及系統，實爲 需要且有用，俾經常使用於晶圓製造環境，以及晶圓硏究 或發展環境中。 ____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ——^!llr----«裝 (請先閱讀背面之注意事項再填寫本頁) 訂—*—*— 經濟部智慧財產局員工消費合作社印制衣 594001 Α7 Β7 五、發明說明（，） 發明槪要 本發明係有關用於光學顯微鏡上之照明方法及系統， 諸如應用於晶圓檢查及量度系統上，且更明確言之，係有 關用於光學顯微鏡晶圓檢查及量度系統中之多頻帶u v光 晶圓照明之方法及系統。 本發明之多頻帶U V光照明方法及系統之特色爲使用 一 u V光源（例如水銀弧光燈），產生具有3 6 0 -37〇一nm，398 — 407nm之二窄頻帶範圍之 UV光照明光譜，及4 2 7 — 4 3 4 nm之一單窄頻帶範 圍之可見光照明光譜之一多波長U V光源。而且，本發明 之方法及系統提供由光學裝置檢查或量度晶圓之系統，包 含，但不限於一寬頻帶物鏡系統，使多頻帶U V光能通過 一寬頻帶U V照明徑路，並能收集來自晶圓表面之影像反 射及散射；及一寬頻帶管透鏡，用以使影像反射及散射聚 焦於一感光攝影機表面上。而且，使用特別寫作之資料處 理演算法，以處理由使用本發明方法所獲得之晶圓影像。 與寬頻帶白光照明相較，本發明之光學顯微鏡晶圓檢 查及量度系統之多頻帶U V光晶圓照明之方法及系統之實 施導致單個物件或結構解像度之顯著及可量度之提高，且 與單色ϋ V光照明之方法及系統相較，晶圓影像之整個系 統解像度顯著及可量度之提高，而不致晶圓受輻射損害。 本發明之方法及系統直接應用於晶圓生產環境，包括應用 於品質管制系統，用於晶圓製造之各階層，晶圓影像之系 統解像度之提高對現發生於半導體工業之晶圓發展及製造 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ ι 〇 - ---mr--£-----up— 裝 (請先閱讀背面之注意事項再填寫本頁) 訂-------- 聲 經濟部智慧財產局員工消費合作社印製 594001 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（8 ) 中之技術進步極爲重要。 本發明之光學顯微鏡晶圓檢查及量度系統之多頻帶 u v光晶圓照明方法之一較佳實施例之特色爲以下主要步 驟：（1 )初始化晶圓檢查或量度之光學顯微鏡，包括（ a )提供具有寬頻帶物鏡系統之一光學顯微鏡，及（b ) 選擇具有所需放大率之寬頻帶物鏡系統；（2 )最佳化晶 圓檢查及量度之光學顯微鏡，包括（a )依據特定之晶圓 檢查或量度應用，由寬頻帶濾波或分立頻帶濾波過濾原始 UV光源’產生一多頻帶UV光譜；（3)由最佳化之多 頻帶U V光源照明晶圓；（4 )對晶圓攝影，包括（a ) 經由多頻帶物鏡收集來自晶圚表面之多頻帶U V光之影像 反射及散射，（b )經由寬頻帶管透鏡聚焦影像反射及散 射於一感光攝影機表面上，（c )數位化光強度之分佈， 及（d )儲存光強度之數位化分佈；及（5 )依據所需之 應用，對所儲存之光強度之所儲存之數位化分佈執行影像 處理，包括（a )應用特定之演算法，以處理數位化之晶 圓影像；及（b )顯示及使用該結果，以分析晶圓表面。 本發明之光學顯微鏡晶圓檢查及量度系統之多頻帶 U V光晶圓照明系統之一較佳實施例特色爲以下主要組成 件：（1 ) 一光學顯微鏡，具有一寬頻帶物鏡系統，——寬 頻帶照明徑路，及一寬頻帶管透鏡；（2 ) —原始紫外光 源，由此，原始紫外光源爲光學顯微鏡系統之一部份；（ 3 )用以由原始紫外光源產生多頻帶紫外光源之一裝置， 此執行原始紫外光源之寬頻帶濾波或分立頻帶濾波；及（ (請先閱讀背面之注意事項再填寫本頁) « -裝 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _ 1，- 594001 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（9 ) 4 )欲由使用多頻帶紫外光源照明之晶圓。本發明系統之 較佳實施例之另外組成件包含（5 ) —攝影機，具有一感 光攝影機表面’用以經由寬頻帶管透鏡接收來自晶圓表面 之多頻帶U V光之聚焦之影像反射及散射；及（6 )資料 處理裝備’用以數位化晶圓表面之光強度特徵之分佈，儲 存數位化之光強度分佈，及處理所儲存之光強度之數位化 分佈。用以處理晶圓表面之光強度特徵之數位化分佈之資 料處理裝備特色爲用於，但不限於晶圓偵測，晶圓光覆蓋 量度，及晶圓光臨界幅度量度之特殊演算法。 依據本發明，提供一種光學顯微鏡晶圓檢查及量度系 統之多頻帶紫外光晶圓照明之方法，該方法包括步驟：（ a )提供一光學顯微鏡，特色爲一寬頻帶物鏡系統，一寬 頻帶照明徑路，及一寬頻帶管透鏡之特色；（b )置晶圓 於光學顯微鏡之樣品保持具上；（c )發動一原始紫外光 源，由此，原始紫外光源爲光學顯微鏡系統之一部份；（ d )由原始紫外光源產生多頻帶紫外光源；（e )置晶圓 於寬頻帶物鏡系統之焦平面內；（f )使用多頻帶紫外光 源照明晶圓；（g )使甩多頻帶紫外光源對晶圓攝影；（ h )處理晶圓之影像；及（1 )顯示及使用晶圓之資料處 理結果。 依據本發明，提供一種光學顯微鏡檢查及量度系統之 多頻帶紫外光晶圓照明之系統，該系統包含：（a ) —光 學顯微鏡，特色爲一寬頻帶物鏡系統，一寬頻帶照明徑路 ，及一寬頻帶管透鏡之特色；（b ) —原始紫外光源，由 (請先閱讀背面之注意事項再填寫本頁) « -裝 訂： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- 594001 A7 B7 五、發明說明（10 ) 此’原始紫外光源爲光學顯微鏡系統之一部份；（C )用 以由原始紫外光源產生多頻帶紫外光源之一裝置；及（d )欲由使用多頻帶紫外光源照明之晶圓。 依據本發明，提供一種產生晶圓檢查及量度用之照明 之多頻帶紫外光源之方法，該方法包括步驟：（a )提供 一光學顯微鏡，特色爲一寬頻帶物鏡系統，一寬頻帶照明 徑路’及一寬頻帶管透鏡；（b )發動一原始紫外光源， 由此’原始紫外光源爲光學顯微鏡系統之一部份；（c ) 發送原始紫外光源之紫外光於寬頻帶紫外光照明徑路中； 及（d )由選自寬頻帶濾波及分立頻帶濾波所組之群 中之裝置過濾原始紫外光源之紫外光，以產生照明之多頻 帶紫外光源，由此，照明之多頻帶紫外光源之特色爲多頻 帶紫外光。 本發明方法之實施包括手動，自動，或其合倂執行完 整之工作或步驟。而且，依據特定晶圓檢查系統之實際工 具及裝備，本發明之若干步驟可由硬體或軟體在位何韌體 或其組合之任何操作系統上實施。例如，作爲硬體，本發 明之所示步驟可實施如一晶片或一電路。作爲軟體，本發 明之所示步驟可實施如多個軟體指令，由電腦使用適當之 ί采作系統執行。在任何情形，本發明之所示步驟可說明爲 由資料處理器’諸如用以執行多個指令之電腦平台執行。 附圖簡述 參考附圖，僅以實例說明本發明於此處，在附圖中： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注音？事項再填寫本頁) 裝 經濟部智慧財產局員工消費合作社印製 594001 A7 B7 五、發明說明（11 ) 圖1爲本發明之光學顯微鏡晶圓檢查及量度系統之多 頻帶U V光晶圓照明方法之較佳實施例之流程圖； 圖2爲示範之源影像圖，具有接受光學顯微鏡檢查或 量度之晶圓表面上’所呈現之圖案及缺陷之真實安排； 圖3 A顯示由模擬圖2之晶圓接受使用寬頻帶白光照 明（400 — 600nm)方法之光學顯微鏡檢查或量度 所獲得之模擬影像； 圖3 B顯示由模擬圖2之晶圓接受使用單色U V照明 (3 6 0 — 3 7 0 nm)方法之光學顯微鏡檢查或量度所 獲得之模擬影像； 圖3 C顯示由模擬圖2之晶圓接受使用多頻帶UV光 照明（360 — 370nm 及 398 — 407nm，包含 可見光頻帶427-434nm)方法之光學顯微鏡檢查 或量度所獲得之模擬影像； 圖4顯示影像幅度或影像亮度（灰度）對像素數之線 圖，相當於圖2之示範晶圓圖及圖3 A至3 C之模擬影像 中所示之影像格子之列1 3之斷面線； 圖5顯示影像幅度或影像亮度（灰度）對像素數之線 圖，相當於圖2之示範晶圓圖及圖3 A至3 C之模擬影像 中所示之影像格子之列3 0之斷面線； 圖6顯示影像幅度或影像亮度（灰度）對像素數之線 圖，相當於圖2之示範晶圓圖及圖3 A至3 C之模擬影像 中所示之影像格子之行2 1之斷面線；及 圖7顯示影像幅度或影像亮度（灰度）對像素數之線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 14 - (請先閱讀背面之注音？事項再填寫本頁) 裝 . 經濟部智慧財產局員工消費合作社印製 594001 A7 B7 _ 五、發明說明（12 ) 圖，相當於圖2之示範晶圓圖及圖3 A至3 C之模擬影像 中所示之影像格子之列5 1之斷面線； 主要元件對照表 1〇 晶圓 1 2 圖案 18 缺陷 3 0 像素格子 3 8 模擬影像 9 0 曲線 較佳蹇施例之說明 (請先閱讀背面之注音？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ， 鏡步，下譜 7 。 光更 統 微之解以光 ο}明或 系 顯法例之 V 4m照二 及 學方於例 U 一 η 之之 法 光之用施在 84 中源 方 之明僅實爲 9 3 譜光 之 明照解佳色 34 光明 明 發圓圖較特及 IV照 照 本晶之之其，7 U 之 圓力瞭光明法 ，m2 在中 晶 W 明V發方源 η 4 爲譜 光度更U本之光 οί 可光 V*可帶之明明 7 帶色見 US:， 頻示發照 3 頻特可 帶¾明多所本圓 I 一之在 頻檢說之處，晶 ο 之例及 多Βί帶統此如 一 6 中實， 種晶附系瞭例指 3 譜他帶 一鏡及度明。明即光其頻 爲微圖量應味說 C 見之多 明顯附及。意帶帶可法更 發學考查施制附頻及方或 。 本光參檢實限及二 } 明三帶 於 圓及無圖之m發之頻 用 晶驟且附中 η 本源多 太鉍锯兒麼滴用中國國茇標進（CNS)A4賴格（21〇 χ 297公釐） 594001 A7 B7 五、發明說明（13 ) 現參考附圖，圖1爲本發明之光學顯微鏡晶圓檢查及 量度系統之多頻帶U V光晶圓照明之方法之較佳實施例之 流程圖。在圖1中，各大體適用，本發明之方法之主要步 馬*經編5虎並包含於一框內。進一步代表該方法之所不之主 要步驟之副步驟由括弧中之字母指示。顯示於以下說明中 之術語與圖1中所用者一致。 在步驟1 ’初始化一光學顯微鏡供晶圓檢查之用。在 步驟（a )，提供一光學顯微鏡，具有一寬頻帶物鏡系統 及一寬頻帶U V照明徑路。在步驟（b )，選擇具有所需 放大率範圍之一寬頻帶物鏡系統，用作光學顯微鏡。在步 驟（c )，依據晶圓檢查應用，調整及設定寬頻帶物鏡系 統。在步驟（d )，置一晶圓於樣品保持具（卡盤）上。 在步驟（e )，接通多頻帶U V光源（例如，宜爲一水銀 弧光燈，特色爲水銀蒸氣與貴氣體混合之低壓力）。在步 驟（ί )，發送原始U V光源通過所設置之光學顯微鏡之 寬頻帶U V照明徑路。 在步驟2，最佳化所提供之光學顯微鏡，供晶圓檢查 之用。原始多頻帶UV光源普通特色爲在UV光譜中之 U V光及在可見光譜中之白光，由於此，需要波長濾波器 ，以建立所需光譜之光源。在步驟（a )，依據晶圓檢查 應用，由寬頻帶濾波器或由分立頻帶濾波器過濾原始U V 光源，建立一多頻帶U V光譜。使用寬頻帶U V光濾波取 代單色U V光濾波。在本發明方法之較佳實施例中，多頻 帶UV光源之特色爲在UV光譜中之二頻帶（即3 6 0 — 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -16 - (請先閱讀背面之注意事項再填寫本頁) 裝 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 594001 A7 B7 _ 五、發明說明（14 ) 37 Onm，及398 — 4〇7 nm)及可見光譜中之一 頻帶（427 — 434nm)。本發明方法之另一較佳實 施例可具有在U V光譜中之照明光源之三或更多頻帶，及 在可見光譜中之照明光源之二或更多頻帶。在步驟（b ) ，衰減經濾波之多頻帶U V光源。在步驟（c )，使經濾 波之多頻帶U V光源對齊，聚焦，及朝向於晶圓樣品。在 步驟（d )，置晶圓於寬頻帶物鏡系統之焦平面內。 在步驟3，由最佳化濾波之多頻帶U V光源照明晶圓 。在步驟（a )，發送經過濾之多波長U V光源通過寬頻 帶物鏡系統。在步驟（b )，依據晶圓檢查應用，設定 U V水銀燈之能量位準。在步驟（c )，由濾波之多頻帶 U V光源照明晶圓表面。 在步驟4，對晶圓攝影。在步驟（a )，經由寬頻帶 物鏡系統收集來自晶圓之濾波之多頻帶U V光之影像反射 及散射。在步驟（b )，經由寬頻帶管透鏡聚焦影像反射 及散射於一感光攝影機表面上。攝影機表面接收來自晶圓 表面之光強度之分佈。在步驟（c )，數位化該光強度分 佈。在步驟（d )，儲存光強度分佈於一影像處理器之記 憶器中。 在步驟5，依據所需之晶圓檢查應用，對所儲存之數 位化之光強度分佈執行影像處理，變爲晶圓影像。在步驟 (a ) ’應用特殊化之影像處理演算法來處理數位化之晶 圓影像。缺陷偵測演算法爲普通用於晶圓檢查系統中之特 殊化影像處理演算法類之一例。一普通及廣泛使用之缺陷 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -17 - I n n ·ϋ n an 1 n ϋ immm I n i i n mmmMm l n 訂i a··· >·傷 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 594001 A7 ______B7 _____ 五、發明說明（15 ) 偵測演算法係根據由同一晶圓之二相鄰區域之攝影所獲得 之晶圓影像資料之比較。例如，特定晶圓上之一特定圖案 之第一區之影像可用作第一基準影像。具有相同特定圖案 及含有一缺陷之一第二區可用作第二樣品影像。在此步驟 中，由第二樣品影像直接減第一基準影像偵得缺陷。此種 缺陷偵測演算法之實施涉及設定影像信號（在灰階上所量 得之像素亮度或強度）偵測臨限位準，以避免由於繞射效 應引起影像信號之僞偵測，在此，臨限位準爲在灰階上所 量度之像素亮度或強度之位準，在此以上（即在特定晶圓 區之繞射位準以上）之資料點用於進一步之影像處理，及 在此以下之資料點不用於進一步之影像處理。使用此缺陷 偵測演算法，應用本發明方法之較佳實施例於光學顯微鏡 晶圓檢查系統中，在所獲得之影像資料之處理期間中，經 由可以設定較低之臨限位準，較之在應用寬頻帶白光照明 或單色U V光照明晶圓之方法，導致影像解像度之顯著及 可量度之改進，等於提高缺陷偵測之靈敏度。 在步驟（b )，經處理之晶圓影像之結果顯示於一顯 示裝置上，供分析及特徵化晶圓表面。光學顯微鏡晶圓檢 查及量度系統之多頻帶U V光晶圓照明之方法之示範實施 由電腦化模擬具有圖案及缺陷之一示範晶圓圖接受光學顯 微鏡檢查或量度來顯示，分別使用寬頻帶白光照明，單色 U V光照明，及多頻帶u V光照明。本發明方法之進一步 討論包括分析數位化之晶圓影像，參考在示範晶圓圖及電 腦化模擬影像中所示之像素格子之若干所示之斷面線處影 -----•裝--------訂！！聲. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -18- 594001 A7 B7 五、發明説明（16) 像幅度或像素亮度（灰階）對像素數之比較圖。 (請先閲讀背面之注意事項再填寫本頁) 圖2爲呈現於接受光學顯微鏡檢查或量度之一晶圓之 表面上現之圖案及缺陷之示範真實排列圖1 0。在圖2中 ’出現於晶圓上之普通圖案由1 2 ，1 4 ，及1 6指示， 同時普通缺陷由18 ，20，22，及24指示。圖案 1 2，1 4 ，1 6具有臨界幅度分別爲2 0 0 n m，5〇 n m，及5 0 n m。圖案1 2之左及右邊分別由1 2 a及 12b指示，及中空區域由12c指示。缺陷18 ，20 ，2 2，及2 4具有臨界幅度分別爲1 〇 〇 n m，5 0 n m ，2 0 0 n m ，及 1 〇〇 n m。距圖案 1 2 ， 1 4 ， 及1 6，以及缺陷1 8，2 0，2 2，及2 4較遠之距離 處之另外晶圓表面區由2 6及2 8指示，以供參考。圖2 之圖1 0代表應用本發明方法所用之一光顯微鏡之一示範 視場（例如約6 ，5微米），並由包圍示範晶圓之一部份 之框指示。相當於列及行之格子線由虛線3 0 (列1 3 ) ，3 2 (列 3 0 ) ，3 4 (列 5 3 )，及 3 6 (行 2 1 ) 經濟部智慧財產局員工消費合作社印製 指示，並包含於圖中，以提供所示圖案，缺陷，及其他晶 圓表面區之影素位置之參考。相同之格子線包含於圖2之 示範晶圓之以下電腦模擬影像中，以比較使用本發明方法 及使用寬頻帶白光照明或單色U V光照明方法所獲得之結 果。 圖3 A，3 B，及3 C顯示由圖2之晶圓1 0之示範 源影像接受光學顯微鏡檢查或度量所獲得之模擬影像，分 別使用寬頻帶白光照明（4 0 0 — 6 0 0 n m )，單色 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -19 - 594001 經濟部智慧財產局員工消費合作社印製 A7 ___B7_五、發明說明（17 ) U V光照明（3 6 0 - 3 7 0 n m )，及多頻帶U V光照 明（360 — 370nm 及 398 — 40 7 nm ’ 包括可 見光頻帶427—434nm)。此等顯示中之電腦化模 擬影像由使用一光學顯微鏡之模擬演算法執行’使用晶圓 1〇（圖2 )之示範源影像圖之輸入。模擬演算法模擬理 想光學顯微鏡之操作，同時略去像差影響。模擬演算法根 據理想透鏡之物理模型，此在後孔徑中具有一停止濾波器 。在模擬演算法，後孔徑依據輸入至演算法中之二主要參 數値操作：一數値孔徑（N A，例如等於0 · 9 ，且在晶 圓照明之所示及所述三方法上產生模擬影像中保持恆定不 變），及所用之照明光譜（即寬頻帶白光照明，例如 400 — 600nm;單色UV光照明，例如36〇一 3 7 0 n m ;或多頻帶U V光照明，例如3 6 0 — 3 7 0 nm及398—4〇7nm，包括可見光頻帶427— 4 3 4 n m )。理想透鏡之操作由傅立葉變換於在焦平面 中之影像及在後孔徑平面中之影像間作數學上之說明。在 後孔徑平面中之影像爲在焦平面中之影像之傅立葉變換。 說明此方法之數學等式包含於參考文件 ''光學原理：光之 傳播，干涉，及折射之電磁理論〃，第6版，Born，Max ，及Wolf，Emil，劍橋大學出版社，1 9 9 8。晶圓1 0 (圖2 )之輸入源影像圖由模擬之光學顯微鏡變換爲在物 鏡之焦平面中之光強度分佈。經由模擬，此影像先發送通 過第一理想透鏡，然後發送通過後孔徑停止濾波器，及然 後通過一第二理想管透鏡，在此發生影像放大。輸出之影 (請先閱讀背面之注意事項再填寫本頁) « —裝 訂： 本紙張尺度適用中國國家標準CCNS)A4規格（210 X 297公釐） -20- 594001 A7 B7 五、發明說明（18 ) 像由攝影機偵測’成爲光強度分佈，攝影機由偵測電磁場 之幅度。 (請先閱讀背面之注意事項再填寫本頁) 在圖3 A ’ 3 B，及3 C所示之模擬影像中，由模擬 所獲得之整個輸出影像之視場大小各爲6 · 5微米。模擬 之輸出影像中之像素大小代表模擬中所用之示範晶圓1 〇 之0 · 1微米，或1像素= l〇〇nrn幅度。像素幅度或 強度以亮度，灰階表示，在此，，動態範圍爲〇至2 5 5 灰階。模擬之光學顯微鏡之之數値孔徑在產生所示之三晶 圓照明方法之模擬影像中保持恆定（例如N A + 0 · 9 ) 。呈現於模擬影像中之幅度或像素亮度之不同代表由使用 所示之晶圓照明方法所獲得之真正不同，且並非由使用模 擬演算法所產生之隨機或其他作品。在示範晶圓1 〇之視 場之邊緣處或附近（相當於以下模擬影像圖之邊緣處或附 近之區域）所獲得之任何資訊視爲與本發明方法之討論無 關，且在圖4 ，5 ，6 ，及7中指示如此，由此，圖3 A ，3 B，及3 C提供比較性圖量分析。 經濟部智慧財產局員工消費合作社印製 圖3 A顯示由模擬圖2之示範晶圓1 〇接受光學顯微 鏡檢查或度量所獲得之模擬影像3 8 a ，使用寬頻帶白光 照明（400 — 600nm)。圖2之示範晶圓之圖案 12，14，及 16，缺陷 18，20，22，及 2 4, 另外晶圓表面區2 6及2 8，以及像素格子線3 0 (列3 )，3 2 (列 3 0 ) ’ 3 4 (例 5 3 )及 3 6 (行 2 1 ) 在圖3A中以圖案40a ，42a ，及44a ，缺陷46 a ，48a ，50a ，52a ，另外晶圓表面區54a及 -21 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 594001 B7 五、發明說明（19 ) 5 6 a ’以及像素格子線6〇（列1 3 ) ，6 2 (列3 0 )’ 6 4 (例5 3 )及6 6 (行2 1 )對應指示。 圖3A之要點如下。圖案40a ，42a ，及44a (請先閱讀背面之注意事項再填寫本頁) ，及缺陷46a ，48a ，50a ’及52a之影像解像 度（即非系統解像度）較之圖2之源影像圖1 0之對應圖 案12 ，14 ，及16 ，及對應之缺陷18 ，2〇，22 ，及2 4爲差。圖案4 0 a之側邊及中空區基本上不相分 辨。而且，圖案4 2 a之十字，及圖案4 4 a之二底部及 一上左伸出部，以及中心基本上不分辨。然而，離模擬影 像3 8 a之圖案及缺陷之邊緣之像素位置（例如> 2〇〇 n m )處，例如在另外晶圓表面區5 4 a及5 6 a處之像 素亮度灰階之均勻度及値表示由寬頻帶白光照明源及圖案 4〇a ’ 42a ，及 44a，及缺陷 46a ，48a， 5 0 a ，及5 2 a間之交互作用所引起之最小繞射效應。 最小繞射效應由使用寬頻帶白光照明之光學顯微鏡轉變爲 示範晶圓1 0 (圖2 )之表面之檢查及量度之高系統解像 度。 經濟部智慧財產局員工消費合作社印製 圖3 B顯示由模擬圖2之示範晶圓1 〇接受光學顯微 鏡檢查或度量所獲得之模擬影像3 8 b ，使用單色UV光 照明（3 6 0 — 3 7 0 n m )。圖2之示範晶圓1 〇之圖 案 12 ，14 ，及 16 ，缺陷 18 ’ 2〇，22 ，及 24594001 Printed by A7 B7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs. 5. Description of the Invention (4) The accuracy of the detection or measurement of the pattern is statistically high, even if there is a diffraction effect caused by the edge of another pattern defect. . More specifically, for example, in the case of a wafer defect detection system, the system resolution refers to the distance between a first defect and another defect or an edge of a pattern on the same wafer. Therefore, the detection of the first defect may be Rates are statistically significant. The number of system resolutions to which a particular method of a wafer inspection system belongs 减小 decreases as the system resolution increases, with a unit of distance, such as nm, so that it can be 500 nm from the edge of a pattern or another defect Resolving a defect at a distance indicates that a method has a higher system resolution than a method that can resolve a defect at a greater distance of 100 nm from the edge of a pattern or another defect. One way to increase the resolution of the system is to use wafer inspection or measurement methods and systems that have lower diffraction effects, resulting in effective reduction of the size of the edges of defects or patterns. As such, the image quality of a wafer with multiple objects or structures (ie, pattern defects) needs to take into account and depend on the optimization of three parameters related to resolution: 1) single object or structure image resolution, 2 ) Diffraction effect, and 3) System resolution. 俾 Properly design effective wafer illumination methods and systems for specific optical microscope wafer inspection systems. It is widely known that in the method and system of wafer inspection and measurement system for optical microscope using wide-band wafer illumination, the diffraction effect can be measured lower than the method using narrow-band or monochromatic wafer illumination. In practice, broadband illumination effectively modifies the image of a single object (such as a pattern or defect) from a Gaussian contour. This reduces the first diffraction order contrast 'and, as a result, compared with monochrome illumination (which makes the image contain more than one diffraction order contrast), the total image contrast applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) No ---- 1 ------------- " ^ Order -------- T-- · (Please read the notes on the back before filling in this Page) Λ 594001 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 _5. Description of the invention (5) or system resolution improved. To this end, recent methods and systems for wafer inspection or measurement systems include the use of wideband white light wafer illumination. There are several significant limitations to the currently used wafer illumination methods and systems used in optical microscope wafer inspection and measurement systems. The current critical amplitude of the wafer is about 180 nm. However, the frequent analysis of the wafer structure reduces the defect detection to about 90 nm, and it is less than about 20 nm in terms of measurement, including in light coverage applications. Within 10 nm. So far, the methods and systems for wideband white light illumination for wafer inspection systems have been sufficient to obtain high-quality and high-resolution images. However, with the advancement of wafer inspection and measurement technology, the critical margin has been further reduced, making it more difficult to use wide-band white light crystal lighting to maintain high image resolution of a single object or structure. Because of this, the lighting methods and systems used in wafer inspection and measurement systems for optical microscopes need to be shifted from wideband white light illumination to lower wavelength, higher energy light source wafer illumination, such as UV light illumination. Therefore, it is necessary and useful to have a lighting method and system based on a UV light source for wafer inspection and measurement systems of optical microscopes. Regarding lighting methods and systems involving the use of U V light sources, additional limitations need to be overcome. For example, rather than using a wideband white light source (for example, a spectrum with a wide band wavelength range of 400-800 nm) on a wafer illumination, a monochromatic UV light source (for example, the commonly used 3 6 0 — Narrow band wavelength range of 370 nm), significantly increasing the image resolution of a single object or structure. However, the diffraction effect increases at the same time as the energy of the illumination light source, such as a monochromatic UV light source, increases noise, resulting in noise in the data of the wafer image, causing the system resolution to decrease. For multiple paper sizes that are close to each other, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) applies -ft _ (Please read the note on the back? Matters before filling out this page) «-Packing 594001 A7 ___B7___ 5. Description of the invention (6) Defects and patterned wafers. This phenomenon is particularly significant. The methods commonly used to eliminate or reduce the effect of diffraction are not easily applicable to spheroidal circle inspection or measurement systems using a monochromatic u V light source. For example, an interferometer can be used, but this is very slow, which leads to low output and implementation of reinstatement. In addition, image processing technologies, such as the de-rotating diffractive ring of an image, are not suitable for wafer inspection and measurement systems of optical microscopes. One of the ideal wafer illumination methods and systems for wafer inspection and measurement systems for optical microscopes involves the use of wideband UV wafer illumination, which is characterized by the use of a wideband UV light source with a range of, for example, 250-500 nm. . This wide-band U V light source can effectively modulate a single object or structure with a Gaussian profile, thereby reducing the diffraction effect of interference and leading to improved system resolution. Unfortunately, although a broadband U V light source is theoretically feasible, it has not been identified at this time. Known U V light sources (such as mercury lamps) exhibit a narrow-band monochrome spectrum (such as 360-1370nm, 398-40.7nm, etc.). Close to the ideal wide-band U V light source is the use of multiple bands or wavelengths of known U V light sources for wafer illumination. In this case, the resolution of a single object or structure is better than that of a person using white light, while the diffraction effect is lower than that of an image obtained by observation with a monochromatic UV light source. Therefore, there is a method and system for multi-frequency w U V light illumination for wafer inspection and measurement system of optical microscope, which is really needed and useful. In addition, there are technically feasible, cost-effective, and robust methods and systems for wafer lighting that are really needed and useful, and are often used in wafer manufacturing environments and wafer research or development environments. ____ This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) —— ^! Llr ---- «Packing (Please read the precautions on the back before filling this page) Order — * — * — Printed clothing for employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 594001 Α7 Β7 V. Description of the invention (,) Summary of the invention The invention relates to an illumination method and system for optical microscopes, such as applied to wafer inspection and measurement systems, More specifically, it relates to a method and system for multi-band UV light wafer illumination used in optical microscope wafer inspection and measurement systems. The multi-band UV light illumination method and system of the present invention is characterized by using a u V light source (such as a mercury arc lamp) to generate a UV light illumination spectrum with two narrow frequency bands ranging from 360-370 nm to 398-407 nm. , And a multi-wavelength UV light source in the visible light illumination spectrum of a single narrow-band range of 4 2 7 — 4 3 4 nm. Moreover, the method and system of the present invention provide a system for inspecting or measuring a wafer by an optical device, including, but not limited to, a wide-band objective lens system that enables multi-band UV light to pass through a wide-band UV illumination path and collect Image reflection and scattering on the wafer surface; and a wideband tube lens for focusing the image reflection and scattering on the surface of a photosensitive camera. Furthermore, specially written data processing algorithms are used to process wafer images obtained by using the method of the present invention. Compared with wideband white light illumination, the implementation of the method and system for multi-band UV light wafer illumination of the optical microscope wafer inspection and measurement system of the present invention results in a significant and measurable improvement in the resolution of a single object or structure, and Compared with the method and system of color V-light illumination, the overall system resolution of the wafer image is significantly improved and measurable, without the wafer being damaged by radiation. The method and system of the present invention are directly applied to the wafer production environment, including the application of quality control systems for all levels of wafer manufacturing, and the improvement of the system resolution of the wafer image is important for the development and manufacturing of wafers currently occurring in the semiconductor industry. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) _ ー 〇---- mr-- £ ----- up— (Please read the precautions on the back before filling this page ) Order -------- Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economy 594001 A7 B7 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Technical progress in the description of invention (8) is extremely important. A preferred embodiment of the multi-band UV light wafer illumination method of the optical microscope wafer inspection and measurement system of the present invention is characterized by the following main steps: (1) initializing an optical microscope for wafer inspection or measurement, including (a) Provide one optical microscope with a wide-band objective lens system, and (b) select a wide-band objective lens system with the required magnification; (2) an optical microscope that optimizes wafer inspection and measurement, including (a) based on specific crystals Circle inspection or measurement application, the original UV light source is filtered by wide band filtering or discrete band filtering to generate a multi-band UV spectrum; (3) the wafer is illuminated by the optimized multi-band UV light source; (4) the wafer is photographed, Including (a) reflection and scattering of multi-band UV light collected from the crystal surface through a multi-band objective lens, (b) focused image reflection and scattering on a photosensitive camera surface through a wide-band tube lens, and (c) digitized light Intensity distribution, and (d) digitized distribution of stored light intensity; and (5) imaged stored digitized distribution of stored light intensity according to required application Processing includes (a) applying a specific algorithm to process the digitized wafer image; and (b) displaying and using the results to analyze the wafer surface. A preferred embodiment of the multi-band UV light wafer illumination system of the optical microscope wafer inspection and measurement system of the present invention is characterized by the following main components: (1) an optical microscope with a wide-band objective lens system, a broadband With illumination path, and a wide-band tube lens; (2) —the original ultraviolet light source, so that the original ultraviolet light source is part of the optical microscope system; (3) used to generate a multi-band ultraviolet light source from the original ultraviolet light source A device that performs broadband filtering or discrete band filtering of the original UV light source; and (Please read the precautions on the back before filling out this page) «-The size of this paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) _ 1, 594001 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of Invention (9) 4) Wafers to be illuminated by a multi-band UV light source. Another component of the preferred embodiment of the system of the present invention includes (5)-a camera with a photosensitive camera surface 'for receiving focused image reflection and scattering of multi-band UV light from the wafer surface through a wideband tube lens; (6) Data processing equipment 'is used to digitize the distribution of light intensity characteristics on the wafer surface, store the digitized light intensity distribution, and process the digitized distribution of the stored light intensity. The data processing equipment used to process the digital distribution of light intensity characteristics on the wafer surface features special algorithms for, but not limited to, wafer detection, wafer light coverage measurement, and wafer light critical amplitude measurement. According to the present invention, a method for illuminating a multi-band UV wafer with an optical microscope wafer inspection and measurement system is provided. The method includes the steps of: (a) providing an optical microscope featuring a wide-band objective lens system and a wide-band illumination Path, and the characteristics of a wide-band tube lens; (b) placing the wafer on the sample holder of the optical microscope; (c) launching an original ultraviolet light source, so the original ultraviolet light source is part of the optical microscope system (D) Multi-band UV light source is generated from the original UV light source; (e) The wafer is placed in the focal plane of the wide-band objective lens system; (f) The multi-band UV light source is used to illuminate the wafer; (g) Multi-band UV The light source photographs the wafer; (h) processing the image of the wafer; and (1) displaying and using the data processing results of the wafer. According to the present invention, a system for illuminating a multi-band UV wafer with an optical microscope inspection and measurement system is provided. The system includes: (a) an optical microscope featuring a wide-band objective lens system, a wide-band illumination path, and Features of a wide-band tube lens; (b) — Original UV light source, (Please read the precautions on the back before filling out this page) «-Binding: This paper size applies to China National Standard (CNS) A4 (210 X 297) (Mm) -12- 594001 A7 B7 V. Description of the invention (10) The 'original UV light source is part of the optical microscope system; (C) a device for generating a multi-band UV light source from the original UV light source; and ( d) Wafers to be illuminated by a multi-band UV light source. According to the present invention, a method for generating a multi-band ultraviolet light source for illumination for wafer inspection and measurement is provided. The method includes the steps of: (a) providing an optical microscope featuring a wide-band objective lens system and a wide-band illumination path 'And a wideband tube lens; (b) launching an original ultraviolet light source, whereby' the original ultraviolet light source is part of an optical microscope system; (c) sending the ultraviolet light of the original ultraviolet light source to the wideband ultraviolet light illumination path And (d) the ultraviolet light of the original ultraviolet light source is filtered by a device selected from the group consisting of wideband filtering and discrete band filtering to generate an illuminated multi-band ultraviolet light source, whereby the illuminated multi-band ultraviolet light source Features multi-band UV light. Implementation of the method of the present invention includes performing complete tasks or steps manually, automatically, or a combination thereof. Moreover, depending on the actual tools and equipment of a particular wafer inspection system, certain steps of the present invention can be implemented on any operating system of hardware or software or firmware or a combination thereof. For example, as hardware, the steps shown in the present invention can be implemented as a chip or a circuit. As software, the steps shown in the present invention can be implemented as multiple software instructions and executed by a computer using a suitable operating system. In any event, the steps shown in the present invention may be illustrated as being performed by a data processor ', such as a computer platform for executing a plurality of instructions. Brief description of the drawings With reference to the drawings, the present invention is illustrated here by way of example only. In the drawings: The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) (please read the note on the back first? Please fill in this page again) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 594001 A7 B7 V. Description of the invention (11) Figure 1 is a multi-band UV light wafer illumination method of the optical microscope wafer inspection and measurement system of the present invention Flowchart of a preferred embodiment; Figure 2 is an exemplary source image diagram with a real arrangement of patterns and defects present on the surface of a wafer subjected to inspection or measurement by an optical microscope; Figure 3 A shows a simulation of Figure 2 Wafers received simulated images obtained by optical microscope inspection or measurement using wideband white light illumination (400-600nm); Figure 3B shows the wafers simulated by Figure 2 accepting monochromatic UV illumination (3 6 0-3 7 0 nm) simulated image obtained by optical microscope inspection or measurement; Figure 3C shows that the wafer of Figure 2 was subjected to multi-band UV light illumination (360-370nm and 398-407nm, including Optical band 427-434nm) method of simulated images obtained by optical microscope inspection or measurement; Figure 4 shows a line graph of image amplitude or image brightness (gray scale) vs. number of pixels, which is equivalent to the exemplary wafer map of Figure 2 and Figure 3 Section lines of image grid 1 to 3 shown in the simulated images of A to 3 C; Figure 5 shows a line graph of image amplitude or image brightness (gray scale) vs. number of pixels, which is equivalent to the exemplary wafer map of Figure 2 And the cross-section line of the image grid line 30 shown in the simulated images of Figs. 3 A to 3 C; Fig. 6 shows the line graph of the image amplitude or image brightness (gray scale) versus the number of pixels, which is equivalent to the example of Fig. 2 Wafer diagrams and cross-section lines of line 2 1 of the image grid shown in the simulated images in Figures 3 A to 3 C; and Figure 7 shows the image amplitude or image brightness (gray scale) for the number of pixels. This paper scale applies. China National Standard (CNS) A4 Specification (210 X 297 mm) _ 14-(Please read the phonetic on the back? Matters before filling out this page) Packing. Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 594001 A7 B7 _ V. Description of the Invention (12) Figure, equivalent to the exemplary wafer map of Figure 2 and Figures 3 to 3 Section line 5 of the image grid shown in the simulated image of C. The cross-section of the main components 10 Table Wafer 12 Pattern 18 Defect 3 Pixel grid 3 8 Simulated image 9 0 (Please read the phonetic on the back? Matters before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Mirror Steps, the next spectrum 7. The light is more unified and the solution is the light. The light or V 4m photo of the law is the law of the law of U and η. The light of the source is used in 84. The light of the source is only 9. 34 The bright and bright circle chart is more special and IV according to the original crystal. The 7 U circle has strengthened the light method, m2 is in the crystal W Ming V hair source η 4 is the light with a more spectral intensity. U Ke Guang V * can bring the bright and bright 7 see the color US :, the frequency is shown in the photo 3, the frequency can be brought ¾ Mingduo the original circle I one in the frequency inspection, the example of crystal ο and the multiple tapes are all like this 6 In the case of Zhongshi, the seed crystals are attached to the 3 bands of the finger. Brightness means that the frequency is a micro-map. It should be said that C sees clearly. The intentional band can be used to study and implement the supplementary frequency and formula or. The actual limit of the optical reference and the second} The frequency of the three bands in the circle and the m hair with no picture and the middle η source is too bismuth saw drops drop using the Chinese national standard (CNS) A4 Laig (21〇 χ 297 mm) 594001 A7 B7 V. Description of the invention (13) Referring now to the drawings, FIG. 1 is a preferred embodiment of a method for illuminating a multi-band UV light wafer of an optical microscope wafer inspection and measurement system according to the present invention. flow chart. In Fig. 1, each is generally applicable. The main steps of the method of the present invention are horse warp knitting and 5 tigers, which are contained in a box. Sub-steps that further represent the main steps of the method are indicated by letters in parentheses. The terms shown in the description below are consistent with those used in Figure 1. In step 1 'an optical microscope is initialized for wafer inspection. In step (a), an optical microscope is provided, which has a wide-band objective lens system and a wide-band UV illumination path. In step (b), a wide-band objective lens system having one of the required magnification ranges is selected for use as an optical microscope. In step (c), the wideband objective lens system is adjusted and set according to the wafer inspection application. In step (d), a wafer is placed on the sample holder (chuck). In step (e), a multi-band U V light source is turned on (for example, a mercury arc lamp is preferred, which is characterized by a low pressure of mercury vapor mixed with noble gas). In step (ί), the original U V light source is sent through the broadband U V illumination path of the set optical microscope. In step 2, the provided optical microscope is optimized for wafer inspection. The common features of the original multi-band UV light source are UV light in the UV spectrum and white light in the visible spectrum. Because of this, a wavelength filter is needed to establish the light source of the required spectrum. In step (a), according to the wafer inspection application, the original U V light source is filtered by a wide band filter or by a discrete band filter to establish a multi-band U V spectrum. Instead of monochromatic UV light filtering, a broadband UV light filter is used. In a preferred embodiment of the method of the present invention, the multi-band UV light source is characterized by two frequency bands in the UV spectrum (ie, 3 60 — this paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)) -16-(Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employee Cooperatives of the Ministry of Economic Affairs 594001 A7 B7 _ V. Description of Invention (14) 37 Onm , And 398-407 nm) and one of the frequency bands in the visible spectrum (427-434nm). Another preferred embodiment of the method of the invention may have three or more frequency bands of the illumination light source in the UV spectrum and two or more frequency bands of the illumination light source in the visible spectrum. At step (b), the filtered multi-band UV light source is attenuated. In step (c), the filtered multi-band UV light source is aligned, focused, and oriented toward the wafer sample. In step (d), the wafer is placed in the focal plane of the wide-band objective lens system. In step 3, the wafer is illuminated by the optimized multi-band UV light source. In step (a), the filtered multi-wavelength UV light source is sent through a wideband objective system. In step (b), set the energy level of the U V mercury lamp according to the wafer inspection application. In step (c), the surface of the wafer is illuminated by the filtered multi-band UV light source. In step 4, the wafer is photographed. In step (a), the reflected and scattered image of the filtered multi-band UV light from the wafer is collected via a wide-band objective lens system. In step (b), the image is focused and reflected on a surface of a photosensitive camera through a wideband tube lens. The camera surface receives the distribution of light intensity from the wafer surface. In step (c), the light intensity distribution is digitized. In step (d), the light intensity distribution is stored in a memory of an image processor. In step 5, according to the required wafer inspection application, image processing is performed on the stored digitized light intensity distribution to become a wafer image. In step (a) ', a special image processing algorithm is applied to process the digitized wafer image. Defect detection algorithms are an example of special image processing algorithms commonly used in wafer inspection systems. A common and widely used defect The size of this paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) -17-I nn · ϋ n an 1 n ϋ immm I niin mmmMm ln Order ia ·· > Injury (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 594001 A7 ______B7 _____ V. Description of the invention (15) The detection algorithm is based on two adjacent wafers on the same wafer. Comparison of wafer image data obtained from regional photography. For example, an image of the first region of a specific pattern on a specific wafer may be used as the first reference image. A second region having the same specific pattern and containing a defect can be used as a second sample image. In this step, the first sample image is directly subtracted from the second sample image to detect the defect. The implementation of this defect detection algorithm involves setting the detection threshold level of the image signal (pixel brightness or intensity measured in grayscale) to avoid false detection of the image signal due to diffraction effects. Here The threshold level is the level of pixel brightness or intensity measured on the gray scale, and the data points above (that is, above the diffraction level of a specific wafer area) are used for further image processing, and The following data points are not used for further image processing. Using this defect detection algorithm, the preferred embodiment of the method of the present invention is applied in a wafer inspection system of an optical microscope. During the processing of the acquired image data, a lower threshold level can be set by comparison with The application of wide-band white light illumination or monochromatic UV light to illuminate wafers has resulted in a significant and measurable improvement in image resolution, which is equivalent to increasing the sensitivity of defect detection. In step (b), the results of the processed wafer image are displayed on a display device for analysis and characterization of the wafer surface. Optical microscope wafer inspection and measurement system for multi-band UV light wafer illumination method demonstration implementation Computerized simulation of one of the patterns and defects. Demonstration wafer pattern received by optical microscope inspection or measurement to display, using wideband white light , Monochrome UV light illumination, and multi-band u V light illumination. Further discussion of the method of the present invention includes analysis of digitalized wafer images, with reference to some of the shown cross-sections of the pixel grid shown in the demonstration wafer map and computerized simulation images ----- • installation- ------- Order! !! Voice. (Please read the notes on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) -18- 594001 A7 B7 V. Description of the invention (16) Comparison of pixel brightness (gray scale) vs. number of pixels. (Please read the precautions on the back before filling out this page.) Figure 2 shows an exemplary real arrangement of patterns and defects present on the surface of one of the wafers inspected or measured by light microscopy. In FIG. 2, the common patterns appearing on the wafer are indicated by 12, 14, and 16, and common defects are indicated by 18, 20, 22, and 24. The patterns 12, 1 4, and 16 have critical amplitudes of 200 nm, 50 nm, and 50 nm, respectively. The left and right sides of the pattern 12 are indicated by 1 2 a and 12 b, respectively, and the hollow area is indicated by 12 c. Defects 18, 20, 22, and 24 have critical amplitudes of 100 nm, 50 nm, 2000 nm, and 100 nm, respectively. Additional wafer surface areas at distances from patterns 1 2, 1 4, and 16 and defects 18, 20, 22, and 24 are indicated by 26 and 28 for reference. Figure 10 of Figure 2 represents a demonstration field of view (eg, about 6,5 microns) of one of the light microscopes used in the method of the present invention, and is indicated by a frame surrounding a portion of the demonstration wafer. The grid lines corresponding to columns and rows are composed of dotted lines 30 (column 1 3), 3 2 (column 30), 3 4 (column 53), and 3 6 (row 21). Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed instructions are included in the figure to provide references to the patterns, defects, and pixel locations of other wafer surface areas. The same grid lines are included in the following computer simulation image of the exemplary wafer of FIG. 2 to compare the results obtained using the method of the present invention and using wideband white light illumination or monochromatic UV light illumination. Figures 3 A, 3 B, and 3 C show simulated images obtained from the optical source inspection or measurement of the exemplary source image of wafer 10 of Figure 2 using wideband white light illumination (4 0 0 — 6 0 0 nm, respectively). ), Monochrome This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X 297 mm) -19-594001 Printed by A7 _B7_ of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (17) UV light illumination ( 3 6 0-37 nm), and multi-band UV light illumination (360-370nm and 398-40 7 nm 'including the visible light band 427-434nm). The computerized simulated images in these displays are executed by the simulation algorithm using an optical microscope 'using the input of a sample source image map of wafer 10 (Figure 2). The simulation algorithm simulates the operation of an ideal optical microscope while ignoring the effects of aberrations. Simulation algorithm According to the physical model of the ideal lens, this has a stop filter in the rear aperture. In the simulation algorithm, the post-aperture is based on the two main parameters input into the algorithm: operation: a number of apertures (NA, for example equal to 0 · 9), and the simulation image is generated on the wafer illumination and the three methods described above And keep it constant), and the lighting spectrum used (that is, wide-band white light illumination, such as 400-600nm; monochromatic UV light illumination, such as 360-1370 nm; or multi-band UV light illumination, such as 360 — 37 nm and 398-40.7 nm, including the visible light band 427-4343 nm). The operation of an ideal lens is mathematically explained by Fourier transform between the image in the focal plane and the image in the rear aperture plane. The image in the rear aperture plane is a Fourier transform of the image in the focal plane. The mathematical equations describing this method are contained in the reference document "Principle of Optics: Electromagnetic Theory of Light Propagation, Interference, and Refraction", 6th Edition, Born, Max, and Wolf, Emil, Cambridge University Press, 1 9 9 8. The input source image of wafer 10 (Fig. 2) is transformed from a simulated optical microscope to a light intensity distribution in the focal plane of the objective lens. Through simulation, this image is first transmitted through the first ideal lens, then transmitted through the rear aperture stop filter, and then passed through a second ideal tube lens, where image magnification occurs. The output shadow (please read the precautions on the back before filling this page) «—Binding: This paper size is applicable to the Chinese national standard CCNS) A4 size (210 X 297 mm) -20- 594001 A7 B7 V. Description of the invention (18 ) The image detected by the camera becomes a light intensity distribution, and the camera detects the amplitude of the electromagnetic field. (Please read the precautions on the back before filling in this page.) In the simulation images shown in Figures 3 A ′ 3 B and 3 C, the field size of the entire output image obtained by the simulation is each 6 · 5 microns. The pixel size in the output image of the simulation represents the 0 · 1 micron of the sample wafer used in the simulation, or 1 pixel = 100 nm width. Pixel amplitude or intensity is represented by brightness, gray scale, and here, the dynamic range is 0 to 2 5 5 gray scale. The numerical aperture of the simulated optical microscope remains constant in the simulated image that produces the three-crystal circle illumination method shown (eg, N A + 0 · 9). The difference in amplitude or pixel brightness presented in the simulated image represents a real difference obtained by using the wafer lighting method shown and is not a random or other work produced by the use of simulation algorithms. Any information obtained at or near the edge of the field of view of the demonstration wafer 10 (equivalent to the area near or near the edge of the simulated image below) is deemed to be irrelevant to the discussion of the method of the present invention, and in Figures 4, 5 This is indicated in, 6, and 7, and thus, Figures 3 A, 3 B, and 3 C provide comparative graph analysis. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 3 A shows the simulated image 3 8 a obtained by simulating the model wafer 10 shown in Figure 2 under optical microscopy or measurement, using broadband white light illumination (400-600nm). The pattern 12, 14, and 16 of the exemplary wafer of FIG. 2, defects 18, 20, 22, and 2 4, and wafer surface areas 2 6 and 28, and pixel grid lines 3 0 (column 3), 3 2 (Column 3 0) '3 4 (Example 5 3) and 3 6 (Row 2 1) In FIG. 3A, patterns 40a, 42a, and 44a, defects 46a, 48a, 50a, 52a, and wafer surface area 54a And -21-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 594001 B7 V. Description of the invention (19) 5 6 a 'and pixel grid line 60 (column 1 3), 6 2 (Column 3 0) '6 4 (example 5 3) and 6 6 (row 2 1) corresponding instructions. The main points of FIG. 3A are as follows. Patterns 40a, 42a, and 44a (please read the precautions on the back before filling out this page), and the image resolution (ie, non-systematic resolution) of defects 46a, 48a, 50a ', and 52a compared to the source image in Figure 2 The corresponding patterns 12, 14, and 16 and the corresponding defects 18, 20, 22, and 24 are poor. The sides and hollow areas of the pattern 40a are basically indistinguishable. Moreover, the cross of the pattern 4 2 a, the bottom of the pattern 4 4 a bis and the upper left protrusion, and the center are substantially indistinguishable. However, the pixel positions (eg,> 200 nm) from the pattern and defects' edges of the simulated image 3 8 a, such as the uniformity of the gray scale of the pixel brightness at the other wafer surface areas 5 4 a and 5 6 a The degree and 値 indicate the minimum diffraction effect caused by the interaction between the broadband white light source and patterns 40a '42a, and 44a, and the defects 46a, 48a, 50a, and 5a. The minimum diffraction effect has been transformed from an optical microscope using wideband white light illumination to a high system resolution for inspection and measurement of the surface of a demonstration wafer 10 (Figure 2). Printed in Figure 3B by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a simulated image 3 8 b obtained from an exemplary wafer 10 simulated by FIG. 3 7 0 nm). Patterns 12, 14, and 16 of the exemplary wafer 10 of FIG. 2, defects 18 ′ 20, 22, and 24
’另外晶圓表面區2 6及2 8，以及像素格子線3 〇 (歹[J 3 ) ，3 2 (列 3 0 ) ，3 4 (例 5 3 )及 3 6 (行 2 1 )在圖3B中以圖案4〇b ，42b ，及44b ,缺陷 太鉍锯圮疮湳用中國圃室樘m(CNS)A4梘格抑7公祭） 00 940 A7 --____B7 五、發明説明（2〇 ) 4 6b ，4 8b ，5〇b ，52b ，另外晶圓表面區 5 4 b及5 6 b ，以及像素格子線7〇（列1 3 ) ，7 2 (列3 〇 ) ，7 4 (例5 3 )及7 6 (行2 1 )對應指示 〇 圖3B之要點如下。圖案40b，42b ，及4 4b ’及缺陷4 6 b，4 8 b，5 0 b，及5 2 b之影像解像 度（即非系統解像度）較之與圖2之示範晶圓1 0之對應 圖案12 ，14，及16 ，及對應缺陷18 ，2〇，22 ’及24相對之圖案4〇a ，42a ，及44a ，及缺陷 4 6 a ，4 8 a ，5 0 a ，及5 2 a之解像度顯著爲佳。 圖案4 0 b之側邊及中空區相互分辨。而且，圖案4 2 b 之十字，及圖案4 4 b之二底部及一上左伸出部，以及中 心之影像解像度較之使用示範晶圓1 〇 (圖2 )'之寬頻帶 白光照明方法之模擬影像3 8 a所示之對應圖案組成部份 之影像解像度爲高。 然而，與模擬影像3 8 a不同者，離模擬影像3 8 b 之圖案或缺陷之邊緣之像素位置（例如> 2 0 0 m )處 ，例如在另外晶圓表面區5 4 b及5 6 b處之像素亮度灰 階之明顯變化表示單色U V光照明源及圖案4 0 b ’ 42b ，及 44b，或缺陷 46b，48b ，5〇b ’ 及 5 2 b間之交互作用所引起之重大繞射效應。較之模擬影 像3 8 a中所呈現之最小繞射效應，在模擬影像3 8 b中 明顯之重大繞射效應由使用單色U V光照明方法之光學顯 微鏡轉變爲較之使用寬頻帶白光照明方法爲顯著較低之示 本紙張尺度適用中國國家標準（CNS ) A4規格（2]0Χ 297公釐) ' ' (請先閱讀背面之注意事項再填寫本頁) .4冬· 訂 經濟部智慧財產局員工消費合作社印製 -23- ^94001 A7 —^__!Z____ 五、發明説明（21) /範晶圓（圖2 )之表面之檢查及量度之系統解像度。 (請先閱讀背面之注意事項再填寫本頁) 圓3 c顯示由模擬圖2之示範晶圓1 0接受光學顯微 _檢查或度量所獲得之模擬影像3 8 c，使用多頻帶u V 光照明（3 6 0 — 3 7 0 n m，3 9 8 — 4 0 7 n m )之 方法。圖2之示範晶圓1 0之圖案1 2，1 4 ，及1 6 ， 缺陷18 ，20，22，及2 4，另外晶圓表面區26及 2 8，以及像素格子線3 0 (列1 3 ) ，3 2 (列3 0 ) ’ 34 (例53)及36 (行21)在圖3 c中以圖案 4〇c ，42c ，及 44c ，缺陷 46c ，48c ， 5〇c ，52c ，另外晶圓表面區54c及56c ，以及 像素格子線8〇（列1 3 ) ，8 2 (列3 0 ) ，8 4 (例 5 3 )及8 6 (行2 1 )對應指示。 圖3c之要點如下。圖案40c ，42c ，及44c ’及缺陷4 6 c，4 8 c，5 0 c，及5 2 c之影像解像 度（非系統像度）較之與圖2之示範晶圓1 〇之對應圖案 1 2，1 4，及1 6，及對應缺陷1 8，2 0，2 2，及 2 4相對之模擬影像3 8 a之對應圖案4 0 a ，4 2 a ， 經濟部智慧財產局員Η消費合作社印製 及4 4a ，及缺陷46a ，48a ，5〇a ，及52a之 解像度顯著爲佳。圖案4 0 c之側邊及中空區基本上相互 分辨。而且，圖案42 c之十字，及圖案44 c之二底部 及一上左伸出部，以及中心之影像解像度較之使用示範晶 圓1 〇 (圖2 )之寬頻帶白光照明方法之模擬影像 3 8 a所示之對應組成部份之影像解像度顯著爲高。 至於多頻帶U λ〖照明示範晶圓1 〇之模擬影像3 8 c ----— ___ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -24 - 594001 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明Γ邀） 之圖案及缺陷之殆像解像度（即非系統解像度）與單色 U V光照明示範晶圓1 〇之模擬影像3 8 b之圖案及缺陷 之影像解像度之比較’使用多頻帶U v光照明示範晶圓 1〇之方法所獲得之影像解像度與使用單色U V光照明示 範圓1 0之方法所獲得者相當。 有關由實施本發明之多頻帶U V光照明方法所獲得之 模擬影像3 8 C之繞射效應之呈現’在離圖案或缺陷之邊 緣之像素位置（例如> 2 0 0 n m )處’例如在另外晶圓 表面區5 4 c及5 6 c處之像素亮度灰階之變化雖不如寬 頻帶白光照明法之模擬影像3 8 a中所呈現之像素亮度灰 階之最小變化，但該變化顯著低於單色U V光照明示範晶 圓1 0之方法之模擬影像3 8 b中所呈現者。使用多頻帶 U V光照明之方法能由高斯形輪廓有效調變示範之晶圓圖 案及缺陷，從而較之使用單色U V光照明法降低千涉繞射 效應。轉變繞射效應之程度爲光學顯微鏡晶圓檢查或度量 系統之系統解像度，與單色U V光照明相較，多頻帶U V 光照明方法可達成較高之系統解像度。此表示在使用多頻 帶U V光照明晶圓之方法中，較之使用單色U V光照明， 有偵測，分辨，及量度晶圓缺陷及圖案之較高能力及精確 度。 圖4至7顯示影像幅度或像素亮度（灰階）對像素數 之線圖’在此，每一線圖分別相當於圖2之示範晶圓圖 1〇及圖3A，3B ，及3C之模擬影像38a ，38b ’及3 8 c中所示之影像格子之一列或一行之一不同斷面 (請先閱讀背面之注音？事項再填寫本頁) -裝 % 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -25- 594001 A7 ___B7___ 五、發明説明（23 ) (請先閱讀背面之注意事項再填寫本頁) 線。圖4至7中所含之資料及資訊另以量表示有關影像解 像度，繞射效應，及系統解度之結果及結論，此等由討論 應用於光學顯微鏡晶圓檢查及量度系統上之照明晶圓之不 同方法之圖3A，3B，及3C說明。 圖4顯示影像幅度或像素亮度（灰階）對像素數之線 圖’相當於圖2之示範晶圓1 〇及圖3 A至3 C之模擬影 像中所示之影像格子之列1 3之斷面線。在圖4中，曲線 9 〇，9 2，及9 4爲影像幅度或像素亮度（以灰階爲單 位）對像素數圖，爲沿像素格子之列1 3之斷面線（在晶 圓圖中由30標示，及在模擬影像38a ，38b，及 38c中分別由60，70，及80標示）上自左至右所 視’分別相當於應用使用寬頻帶白光晶圓照明，單色U V 光晶圓照明，及多頻帶U V光晶圓照明之方法。’在所有曲 線9 0，9 2，及9 4中，在像素數少於5處之像素亮度 之陡_下降表示在圖2之示範晶圓1 〇之視場之邊緣處發 生繞射效應，並與有關光照明晶圓之不同方法中之影像解 像度’繞射效應’或系統解像度之不同無關。 經濟部智慧財產局員工消費合作社印製 圖4之要點如下。與圖3 B及3 C之模擬影像3 8 b 及3 8 c之圖案40b及40 c相當之圖2之圖案1 2及 圖案側邊1 2 a及1 2 b及圖案中心1 2 c之較優影像解 像度由沿單色U V光照明及多頻帶υ V光照明之方法之各 別曲線9 2及9 4上在2 5及3 0間之像素數之最小 9 6 a及9 6b及最大9 6 c淸楚表示。與圖3A之模擬 影像3 8 a之圖案4 0 a相當之圖2之圖案1 2及圖案側邊 本纸張尺度適用中國國家標準（CNS ) A4規格（2]0X 297公釐） -26- 594001 A7 B7 五、發明說明（24 ) (請先閱讀背面之注意事項再填寫本頁) 1 2 a及1 2 b ·及圖案中心1 2 c之較低影像解像度由寬 頻帶白光照明法之沿曲線9 0上在2 7及3 0間之像素數 處之9 6 d淸禁表示。而且，由模擬使用多頻帶U V光照 明法所獲得之影像解像度幾乎與由模擬使用單色U V光照 明法所獲得之影像解像度相同。 有關由於照明光源及圖2之示範晶圓1 0上所示之圓 案或缺陷邊緣間之相互作用所引起之繞射效應之比較，圖 4之區域9 8及1 0 0顯示由分別使用單色U V光照明及 多頻帶U V光照明法所獲得之圖3 B之模擬影像3 8 b ( 即沿列1 3 ( 7 0 )上自左至右觀之，缺陷4 6 b， 48b，50b及圖案40b之邊緣區，及晶圓表面區 5 4 b )及圖3 C之模擬影像3 8 c (即沿列1 3 ( 8 0 )上自左至右觀之，缺陷46c，48c，50c及 5 2 c及圖案4 0 c之邊緣區，及晶圓表面區5 4 c )相 當之曲線9 2及9 4，與由使用寬頻帶白光照明所獲得之 與圖3 a之模擬影像3 8 a (即沿列1 3 ( 6 0 )上自左 至右觀之，缺陷46a ，48a ，5〇a ，及52a ，及 圖案40a之邊緣區54a ，及晶圓表面區54a)相當 經濟部智慧財產局員工消費合作社印製 之曲線9 0相較，顯示在像素亮度上之顯著變化。然而， 由與多頻帶U V光照明（圖3 C )相當之曲線9 4所示之 像素亮度之變化顯著低於由與單色U V光照明（圖4 B ) 相當之曲線9 2所示之像素亮度之變化。此結果與圖3 C 之討論一致，由此，多頻帶U V光照明方法較之單色U V 光照明方法可達成較高之系統解像度。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _ 27 - 594001 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（25 ) 圖5顯示影像幅度或像素亮度（灰階）對像素數之線 圖，相當於圖2之示範晶圓圖1 〇及圖3 A至3 C之模擬 影像中所示之影像格子之列3 0之斷面線。在圖5中，曲 線1 1 0 ，1 1 2 ’及1 1 4爲影像幅度或像素亮度（以 灰階爲單位）對像素數之線圖，爲沿像素格子之列3 〇之 斷面線（在晶圓圖1 0中由3 2'標示，及在模擬影像 38a ，38b ，及 38c 中分別由 62 ，72 ，及 82 標示）上自左至右所視，分別相當於應用使用寬頻帶白光 晶圓照明，單色ϋ V光晶圓照明，及多頻帶u V光晶圓照 明之方法。在所有曲線1 1 0 ，1 1 2 ，及1 1 4中，在 像素數少於5處之像素亮度之陡峭下降表示在圖2之示範 晶圓1 0之視場之邊緣處發生繞射效應，並與有關光照明 晶圓之不同方法中之影像解像度，繞射效應，或系統解像 度之不同之討論無關。 圖5之要點如下。與圖3 Β及3 C之模擬影像3 8 b 及3 8 c之圖案4 2b及42 c相當之圖2之圖案1 4之 明顯較高之影像解像度由沿單色U V光照明及多頻帶U V 光照明之方法之各別曲線1 1 2及1 1 4上在1 2及3 0 間之像素數之最小區1 1 6及1 1 8表示，與圖2之圖案 1 4之影像解像度相較，相當於寬頻帶白光照明方法之沿 曲線1 1 0上之同一像素數範圍之圖3 A之模擬影像 3 8 a之圖案4 2 a。而且，由模擬使用多頻帶UV光照 明法（曲線1 1 4 )所獲得之影像解像度基本上與由模擬 使用單色U V光照明法（曲線1 1 2 )所獲得之影像解像 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -OR - -n n n ϋ »- - ϋ n I n I . n ϋ I n i n I 一-0, _ n n Ί— I n J— I I (請先閱讀背面之注意事項再填寫本頁)'In addition, the wafer surface areas 26 and 28, and the pixel grid lines 3 0 (歹 [J 3), 3 2 (column 30), 3 4 (example 5 3), and 3 6 (row 2 1) are shown in the figure. In 3B, the patterns 40b, 42b, and 44b are used, and the defects are too bismuth. Saw scabs are used in Chinese gardens (m4 (CNS) A4, and the 7th sacrifice) 00 940 A7 --____ B7 V. Description of the invention (2) 4 6b, 4 8b, 50b, 52b, and the wafer surface areas 5 4b and 5 6b, and pixel grid lines 70 (column 1 3), 7 2 (column 3 0), 7 4 (Example 5 3) and 7 6 (line 2 1) corresponding instructions. The main points of FIG. 3B are as follows. Patterns 40b, 42b, and 4 4b 'and defects 4 6 b, 4 8 b, 50 b, and 5 2 b have higher image resolution (ie, non-systematic resolution) than the corresponding pattern of the exemplary wafer 10 of FIG. 2 12, 14, and 16, and the corresponding patterns 40a, 42a, and 44a corresponding to defects 18, 20, 22 ', and 24, and defects 4 6a, 4 8a, 50a, and 5 2a The resolution is significantly better. The sides and hollow areas of the pattern 40b are distinguished from each other. Moreover, the cross of the pattern 4 2 b, the bottom of the pattern 4 4 b, the upper left projection, and the center of the image resolution are higher than those of the wide band white light illumination method using the exemplary wafer 10 (Figure 2). The image resolution of the corresponding pattern component shown in the simulated image 3 8 a is high. However, unlike the simulated image 3 8 a, the pixel position (for example> 2 0 0 m) from the edge of the pattern or defect of the simulated image 3 8 b, for example, in the other wafer surface areas 5 4 b and 5 6 The apparent change in the gray level of the pixel brightness at b indicates the significant interaction caused by the interaction between monochromatic UV light sources and patterns 40b'42b, and 44b, or defects 46b, 48b, 50b ', and 5b. Diffraction effect. Compared with the smallest diffraction effect in the simulated image 3 8 a, the significant diffraction effect in the simulated image 3 8 b is changed from an optical microscope using a monochromatic UV light illumination method to a method using a broad band white light illumination In order to show a significantly lower paper size, the Chinese national standard (CNS) A4 specification (2) 0 × 297 mm is applicable. '' (Please read the precautions on the back before filling this page). 4 Winter · Order Intellectual Property Printed by the Bureau's Consumer Cooperatives-23- ^ 94001 A7 — ^ __! Z____ V. Description of the invention (21) / Fan wafer (Figure 2) Surface inspection and measurement system resolution. (Please read the precautions on the back before filling in this page.) Circle 3 c shows the simulated image obtained by simulating the model wafer of Figure 2 0. Optical microscope_inspection or measurement 3 8 c, using multi-band u V light Illumination (3 60-37 nm, 3 98-4 0 7 nm). The pattern of the exemplary wafer 10 in FIG. 2 is 1, 2, 4 and 16, defects 18, 20, 22, and 2 4 and the wafer surface areas 26 and 28, and pixel grid lines 3 0 (column 1). 3), 3 2 (column 30), 34 (example 53) and 36 (row 21) are shown in Fig. 3c with patterns 40c, 42c, and 44c, defects 46c, 48c, 50c, 52c, and The wafer surface regions 54c and 56c, and the pixel grid lines 80 (column 1 3), 8 2 (column 30), 8 4 (example 5 3), and 8 6 (row 2 1) are correspondingly indicated. The main points of Figure 3c are as follows. Patterns 40c, 42c, and 44c 'and defects 4 6 c, 4 8 c, 5 0 c, and 5 2 c are more image resolution (non-systematic) than the corresponding pattern 1 of the exemplary wafer 1 in FIG. 2 2, 1, 4, and 16, and the corresponding defects 18, 20, 22, and 2 4 The corresponding patterns of the simulated images 3 8 a 4 0 a, 4 2 a, members of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives The resolution of printed and 4 4a, and defects 46a, 48a, 50a, and 52a are significantly better. The sides and hollow areas of the pattern 40c are basically distinguished from each other. Moreover, the cross of the pattern 42c, the bottom and one of the upper left protrusion of the pattern 44c, and the center of the image resolution are compared with the simulated image using the wideband white light illumination method of the demonstration wafer 10 (Figure 2). The image resolution of the corresponding components shown in 8a is significantly higher. As for the multi-band U λ analog image of the lighting demonstration wafer 1 〇 3 8 c ----—— ___ This paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) -24-594001 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employees' consumer cooperatives A7 B7 V. Description of the invention Γ) Patterns and defects of the image resolution (ie, non-systematic resolution) and monochrome UV light demonstration wafer 1 0 Simulated image 3 8 b Patterns and defects Comparison of image resolution 'The image resolution obtained by using the multi-band UV light illumination demonstration wafer 10 is equivalent to that obtained by using the monochrome UV light illumination demonstration circle 10'. The presentation of the diffraction effect of the simulated image 3 8 C obtained by implementing the multi-band UV light illumination method of the present invention is 'at a pixel position (eg,> 2 0 0 nm) away from the edge of the pattern or defect', for example, at In addition, the changes in the pixel brightness gray levels at the wafer surface areas 5 4 c and 5 6 c are not as small as the smallest changes in pixel brightness gray levels shown in the wideband white light illumination simulation image 3 8 a, but the change is significantly lower. Simulated image 3 8 b of a method for demonstrating wafer 10 in monochrome UV light. The method using multi-band UV light illumination can effectively modulate the demonstrated wafer pattern and defects from the Gaussian contour, thereby reducing the diffraction effect compared to using the monochrome UV light illumination method. The degree of the diffraction effect is changed to the system resolution of the wafer inspection or measurement system of the optical microscope. Compared with the monochromatic UV light illumination, the multi-band UV light illumination method can achieve a higher system resolution. This means that in the method of illuminating wafers using multi-band UV light, it has higher ability and accuracy to detect, distinguish, and measure wafer defects and patterns than using monochrome UV light. Figures 4 to 7 show line diagrams of image amplitude or pixel brightness (gray scale) vs. number of pixels. Here, each line diagram is equivalent to the simulated wafer image 10 in Fig. 2 and the simulated images in Figs. 38a, 38b 'and 3 8c. One column or one row of a different section of the image grid (please read the phonetic on the back? Matters before filling out this page)-% installed This paper size applies Chinese National Standards (CNS) A4 specification (210 X 297 mm) -25- 594001 A7 ___B7___ V. Description of the invention (23) (Please read the precautions on the back before filling this page) line. The data and information contained in Figures 4 to 7 are expressed in terms of image resolution, diffraction effects, and system resolution results and conclusions. These are discussed in the application of the light microscope wafer inspection and measurement system to the illumination crystal. The different methods of circles are illustrated in Figures 3A, 3B, and 3C. Figure 4 shows a line graph of image amplitude or pixel brightness (gray scale) vs. number of pixels, which is equivalent to the image grid columns 1 to 3 shown in the simulated wafer 10 of Figure 2 and the simulated images of Figures 3 A to 3 C. Section line. In Figure 4, the curves 90, 92, and 94 are graphs of the image amplitude or pixel brightness (in gray scale) versus the number of pixels. They are the cross-section lines along the pixel grid line 13 (in the wafer graph). (30 in the middle, and 60, 70, and 80 in the simulated images 38a, 38b, and 38c, respectively). Viewing from left to right on the analog images are equivalent to applications using wideband white light wafer lighting, and monochrome UV light. Wafer lighting, and multi-band UV light wafer lighting methods. 'In all the curves 90, 92, and 94, the steepness of the pixel brightness drops at the number of pixels less than 5 indicates that the diffraction effect occurs at the edge of the field of view of the exemplary wafer 10 of FIG. 2, It has nothing to do with the difference in image resolution 'diffraction effect' or the system resolution in different methods of illuminating wafers. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The main points of Figure 4 are as follows. Comparison of the patterns 40b and 40c of the simulated images 3 8b and 3 8c in Figs. 3B and 3C. The comparison of the pattern 12 and the pattern sides 1 2a and 1 2b in Fig. 2 and the pattern center 1 2c. The best image resolution consists of the minimum 9 6 a and 9 6 b and the maximum 9 of the number of pixels between 2 5 and 30 on the individual curves 9 2 and 9 4 along the method of monochromatic UV light illumination and multi-band V light illumination. 6 c 淸 chu said. Figure 3A is the same as the simulated image 3 8 a of the pattern 4 0 a of the pattern 12 of figure 2 and the sides of the pattern. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2) 0X 297 mm. -26- 594001 A7 B7 V. Description of the invention (24) (Please read the precautions on the back before filling out this page) 1 2 a and 1 2 b · and the lower image resolution of the pattern center 1 2 c is determined by the broadband white light illumination method 9 6 d is forbidden on the curve 90 at the number of pixels between 27 and 30. Moreover, the image resolution obtained by the simulation using the multi-band U V illumination method is almost the same as the image resolution obtained by the simulation using the monochromatic U V illumination method. For comparison of the diffraction effects caused by the interaction between the illumination source and the circular pattern or defect edge shown on the exemplary wafer 10 in FIG. 2, areas 9 8 and 1 0 in FIG. The simulated image of Figure 3B obtained by the color UV light illumination and multi-band UV light illumination method 3 8 b (that is, viewed from left to right along the column 13 (7 0), defects 4 6 b, 48b, 50b and The edge area of the pattern 40b, and the wafer surface area 5 4 b) and the simulated image 3 8 c (that is, along the line 13 (80)) from left to right, defects 46c, 48c, 50c and 5 2 c and pattern 4 0 c edge area, and wafer surface area 5 4 c) Curves 9 2 and 9 4 equivalent to those obtained by using broadband white light illumination and the simulated image of FIG. 3 a 3 8 a (Ie, viewed from left to right along the column 13 (60), the defects 46a, 48a, 50a, and 52a, and the edge area 54a of the pattern 40a, and the wafer surface area 54a) are the intellectual property of the Ministry of Economic Affairs. Compared with the curve 90 printed by the bureau ’s consumer cooperatives, it shows a significant change in pixel brightness. However, the change in brightness of a pixel shown by curve 9 4 equivalent to multi-band UV light illumination (Fig. 3C) is significantly lower than the pixel shown by curve 92 corresponding to monochromatic UV light illumination (Fig. 4B). Changes in brightness. This result is consistent with the discussion in FIG. 3C. Therefore, the multi-band UV light illumination method can achieve a higher system resolution than the monochrome UV light illumination method. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) _ 27-594001 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (25) Figure 5 shows the image amplitude or pixel brightness The (gray scale) line graph of the number of pixels is equivalent to the cross-section line of the image grid line 30 shown in the simulated wafers in FIG. 2 and the simulated images in FIGS. 3A to 3C. In Figure 5, the curves 1 1 0, 1 1 2 'and 1 1 4 are line diagrams of the image amplitude or pixel brightness (in gray scales) versus the number of pixels, and are cross-section lines along the pixel grid column 3 0 (Indicated by 3 2 'in the wafer map 10 and 62, 72, and 82 in the simulated images 38a, 38b, and 38c, respectively) When viewed from left to right, they are equivalent to the application using a wide band White light wafer lighting, monochrome ϋV light wafer lighting, and multi-band u V light wafer lighting methods. In all the curves 1 1 0, 1 1 2, and 1 1 4, the steep decrease in the pixel brightness at the number of pixels less than 5 indicates that the diffraction effect occurs at the edge of the field of view of the exemplary wafer 10 of FIG. 2 It has nothing to do with the discussion of the difference in image resolution, diffraction effect, or system resolution in different methods of illuminating wafers. The main points of Figure 5 are as follows. The pattern 3 2b and 42c corresponding to the simulated images 3B and 3C in Figures 3B and 3C are similar to the pattern 1 in Figure 2 and the significantly higher image resolution is illuminated by monochromatic UV light and multi-band UV The smallest areas of the number of pixels between 1 2 and 30 on the respective curves 1 1 2 and 1 1 4 of the method of light illumination 1 1 6 and 1 1 8 represent, compared with the image resolution of the pattern 14 of FIG. 2 , Which is equivalent to the pattern of the same number of pixels along the curve 1 10 in the wide band white light illumination method, the pattern of the simulated image 3 8 a in FIG. 3 A, and the pattern 4 2 a. Moreover, the image resolution obtained by the simulation using the multi-band UV light illumination method (curve 1 1 4) is basically the same as the image resolution obtained by the simulation using the monochromatic UV light illumination method (curve 1 1 2). China National Standard (CNS) A4 (210 X 297 mm) -OR--nnn ϋ »--ϋ n I n I. N ϋ I nin I a -0, _ nn Ί — I n J — II (Please (Read the notes on the back before filling out this page)
594001 Α7 Β7 五、發明説明（26 ) 度相同。 (請先閱讀背面之注意事項再填寫本頁) 有關由於照明光源及圖2之示範晶圓1 0上所示之圓 案或缺陷邊緣間之相互作用所引起之繞射效應之比較，圖 5之區域1 2 0及1 2 2顯示與圖3 B之模擬影像3 8 a C即沿列1 3 ( 7 〇 )上自左至右觀之，缺陷5 0 b及 52b及圖案40b，42b ，及4 4b之邊緣區）及圖 3 C之模擬影像3 8 c (即沿列3 0 ( 8 2 )上自左至右 觀之，缺陷50c及52c及圖案40c ，42c ，及 4 4 c之邊緣區）相當之由分別使用單色u V光照明及多 頻帶U V光照明法所獲得之曲線χ χ 2及1 1 4，與由使 用寬頻帶白光照明所獲得之相當於圖3 A之模擬影像 3 8 a (即沿列3 0，6 2上自左至右觀之，缺陷5 0 a 及 52a ，及圖案 40a ，42a ，及 44a 44 a)之 曲線1 1 0相較’顯不在像素売度上僅中度變化。 經濟部智慧財產局員工涓費合作社印製 圖6顯示影像幅度或像素亮度（灰階）對像素數之線 圖，相當於圖2之示範晶圓圖1 〇及圖3 A至3 C之模擬 影像中所示之影像格子之行2 1之斷面線。在圖6中，曲 線1 3 0 ，1 3 2，及1 3 4爲影像幅度或像素亮度（以 灰階爲單位）對像素數之線圖，爲沿像素格子之徑2 1之 斷面線（在晶圓圖1 0中由3 6標示，及在模擬影像 38a ，3 8b ，及 38c 中分別由 66 ，76 ，及 8 6 標示）上自上至下所視，分別相當於應用使用寬頻帶白光 晶圓照明，單色υ λ「光晶圓照明，及多頻帶U V光晶圓照 明之方法。在所有曲線1 3 0 ，1 3 2 ，及1 3 4中，在 本纸張尺度適用中國國家標準（CNS ) Α4規格（2]0Χ297公釐） -29- 594001 經濟部智慧財產局員工消費合作社印製 A7 _B7___五、發明說明（27 ) f象素數少於4之像素亮度之陡峭下降表示在圖2之示範晶 圓1 〇之視場之邊緣處發生繞射效應’並與有關光照明晶 圓之不同方法中之影像解像度，繞射效應，或系統解像度 之不同之討論無關。 圖6之要點如下。與圖3 B及3 C之模擬影像3 8 b 及3 8 c之圖案4 2 b及4 2 c相當之圖2之圖案1 4之 顯著較高之影像解像度由沿單色U V光照明及多頻帶U V 光照明之方法之各別曲線1 3 2及1 3 4上在2 8及3 5 間之像素數之最低區1 3 6表示’與圖2之圖案1 4之影 像解像度相較’相當^於^寬胃帶白光:照日月力 '法之丨台®線 1 3 0上之同一像素數範圍之圖3A之模擬影像3 8 a之 圖案4 2 a相當。而且，由模擬使用多頻帶U V光照明法 所獲得之影像解像度與由模擬使用單色U V光照明法所獲 得之影像解像度非常相似。故此’再度顯示在圖2之示範 晶圓1 0上之圖案之影像解像度由使用本發明之多頻帶 U V光照明方法較之使用寬頻帶白光照明方法提高。 有關由於照明光源及圖2之示範晶圓1 0上所呈現之 圓案或缺陷邊緣間之相互作用所引起之繞射效應之比較， 圖6之區域1 4 0及1 4 2顯示與圖3 B之模擬影像 3 8 b (即沿行2 1 ，7 6上自頂至底觀之，缺陷4 6 b ，48b，50b 及 52b 及圖案 40b，42b ’ 及 4 4 b之邊緣區）及圖3 C之模擬影像3 8 c (即沿行 21 ，86上自頂至底觀之，缺陷46c，48c ’ 50c及52c及圖案40c ，42c ，及44c之邊緣 (請先閱讀背面之注音？事項再填寫本頁)594001 Α7 Β7 5. Description of the invention (26) The degree is the same. (Please read the precautions on the back before filling out this page) For comparison of diffraction effects caused by the interaction between the illumination source and the circular pattern or defect edge shown on the model wafer 10 in Figure 2, Figure 5 The areas 1 2 0 and 1 2 2 are displayed in the same way as the simulated image 3 8 a C in FIG. 3 B, which is viewed from left to right along the column 13 (70), the defects 50b and 52b, and the patterns 40b, 42b. And the edge area of 4 4b) and the simulated image of FIG. 3 C 3 8 c (that is, viewed from left to right along the line 3 0 (8 2), the defects 50c and 52c and the patterns 40c, 42c, and 4 4c Marginal area) Equivalent to the curves χ χ 2 and 1 1 4 obtained by using monochrome u V light illumination and multi-band UV light illumination, respectively, and the simulation equivalent to FIG. 3 A obtained by using broadband white light illumination The curve 1 1 0 of image 3 8 a (that is, viewed from left to right along the column 3 0, 62, the defects 50 a and 52a, and the patterns 40a, 42a, and 44a 44a) is compared to the 'not visible pixels' Only moderate changes in degree. Employees from the Intellectual Property Bureau of the Ministry of Economic Affairs print the graph of the image amplitude or pixel brightness (gray scale) vs. number of pixels, which is equivalent to the simulation wafers in Figure 2 and the simulations in Figures 3 to 3C. Section line of the image grid line 21 shown in the image. In FIG. 6, the curves 1 3 0, 1 2 3, and 1 3 4 are line graphs of image amplitude or pixel brightness (in gray scales) versus the number of pixels, and are cross-section lines along the diameter 21 of the pixel grid. (Indicated by 3 6 in the wafer map 10, and 66, 76, and 8 6 in the simulated images 38a, 3 8b, and 38c, respectively.) When viewed from top to bottom, they are equivalent to applications using broadband Wafer illumination with white light, monochrome λ λ "light wafer illumination, and multi-band UV light wafer illumination method. In all curves 1 3 0, 1 2 2 and 1 3 4 are applicable on this paper scale China National Standard (CNS) A4 Specification (2) 0 × 297 mm -29- 594001 Printed by A7 _B7___, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (27) f The steep decline indicates that the diffraction effect occurs at the edge of the field of view of the exemplary wafer 10 of FIG. 2 and is not related to the discussion of the difference in image resolution, diffraction effect, or system resolution in different methods of illuminating the wafer. The main points of Figure 6 are as follows. Patterns of the simulated images of Figures 3 B and 3 C 3 8 b and 3 8 c 4 2 b and 4 2 c are equivalent to the pattern of Figure 2 and the significantly higher resolution of the image is represented by the respective curves along the method of monochromatic UV light illumination and multi-band UV light illumination 1 2 and 1 3 4 on 2 8 The lowest area of the number of pixels between 3 and 5 is 1 3 6 which means 'comparable to the image resolution of pattern 1 4 in Figure 2'. The simulated image of FIG. 3A in the same pixel number range on 0 is 3 8 a and the pattern 4 2 a is equivalent. Moreover, the image resolution obtained by the simulation using the multi-band UV light illumination method is similar to that obtained by the simulation using the monochrome UV light illumination method The obtained image resolution is very similar. Therefore, the image resolution of the pattern shown on the exemplary wafer 10 in FIG. 2 is improved by using the multi-band UV light illumination method of the present invention compared with the wide-band white light illumination method. Comparison of the diffraction effect caused by the light source and the interaction between the circular pattern or the defect edge presented on the exemplary wafer 10 in FIG. 2, and the areas 1 4 0 and 1 4 2 in FIG. 6 are shown in simulation with FIG. 3 B Image 3 8 b (ie, viewed from top to bottom along line 2 1, 7 6, defect 4 6 b, 48b 50b and 52b and the edge areas of the patterns 40b, 42b 'and 4 4 b) and the simulated image 3 8 c of FIG. 3 C (that is, from top to bottom along lines 21 and 86, defects 46c, 48c' 50c and 52c and the edges of the patterns 40c, 42c, and 44c (please read the phonetic on the back? Matters before filling out this page)
-LWI « Ίδι·. « 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -30 - 594001 經濟部智慧財產局員工消費合作社印製 A7 __B7____ 五、發明說明（28 ) 區）相當之由分別使用單色U V光照明及多頻帶u v光照 明法所獲得之曲線1 3 2及1 3 4 ，與由使用寬頻帶白光 照明所獲得之相當於圖3 A之模擬影像3 8 a (即沿& 21 ，66上自頂至底觀之，缺陷46a ，48a ， 5〇a及52a ，及圖案40a ，42a ，及44a之邊 緣區，及晶圓表面區5 6 a )之曲線1 3 0相較，顯示在 像素亮度上顯著變化。然而，由曲線1 3 4所示之相當於 多頻帶U V光照明（圖3 C )之像素亮度之變化顯著低於 由相當於單色U V光照明（圖3 B )之曲線1 3 2所示之 像素亮度之變化。此結果與圖3 C之討論一致，由此，多 頻帶U V光照明方法較之單色U V光照明方法可達成較高 之系統解像度。 圖7顯示影像幅度或像素亮度（灰階）對像素數之線 圖，相當於圖2之示範晶圓圖1 0及圖3 A至3 C之模擬 影像中所示之影像格子之列5 3之斷面線。在圖7中，曲 線150 ’ 152 ’及154爲影像幅度或像素売度（以 灰階爲單位）對像素數之線圖，爲沿像素格子之列5 3之 斷面線（在晶圓圖1 0中由3 4標示，及在模擬影像 38a ，38b ，及 38c 中分別由 64 ，74 ，及 84 標示）上自左至右所視，分別相當於應用使用寬頻帶白光 晶圓照明，單色U V光晶圓照明，及多頻帶U V光晶圓照 明之方法。在所有曲線150 ，152 ，及154中，在 像素數少於5處之像素亮度之陡峭下降表示在圖2之示範 晶圓1 0之視場之邊緣處發生繞射效應，並與有關光照明 —t---：-----I ^--------^------.-- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —31 - 經濟部智慧財產局員工消費合作社印製 594001 A7 B7 _ 五、發明說明（29 ) 晶圓之不同方法中之影像解像度’繞射效應’或系統解像 度之不同之討論無關。 圖7之要點如下。沿圖2之示範晶圓圖1 〇或模擬影 像38a，38b ’及38c (分別圖3A’ 3B，及 3 C )中之像素格子之列5 3上無圖案或缺陷。故此，無 有關圖案或缺陷之影像解像度之比較。有關由於照明光源 及圖2之不範晶圓1 〇上所呈現之圓案或缺陷邊緣間之相 互作用所引起之繞射效應之比較’在像素數7至6 5之範 圍中，相當於圖3 B之模擬影像3 8 a (即沿列5 3， 7 4上自左至右觀之，缺陷4 4 b之底邊緣及晶圓表面區 5 6 b )及圖3 C之模擬影像3 8 c (即沿列5 3，8 4 上自左至右觀之，圖案4 4 c之底邊緣區及晶圓表面區 5 6 c )之由分別使用單色UV光照明及多頻帶UV光照 明法所獲得之圖7之曲線1 5 2及1 5 4，與由使用寬頻 帶白光照明所獲得之相當於圖3 A之模擬影像3 8 a (即 沿列5 3，6 4上自左至右觀之，圖案4 4 a之底邊緣及 晶圓表面區5 6 a )之曲線1 5 0相較，顯示在像素亮度 上顯著變化。然而，由與多頻帶U V光照明（圖3 C )相 當之曲線1 5 4所示之像素亮度之變化顯著低於與單色 U V光照明（圖3 B )相當之曲線1 5 2所示之像素亮度 之變化。如在圖4及6之討論中所示，此含與圖3 C之討 論一致，由此，多頻帶U V光照明方法較之單色u V光照 明方法可達成較高之系統解像度。 本發明之光學顯微鏡晶圓檢查及量度系統之多頻帶 本紙張尺度翻中關家標準（CNS)A4規格（210x 297公爱)-32- " (請先閱讀背面之注意事項再填寫本頁) -裝 訂- 經濟部智慧財產局員工消費合作社印製 594001 A7 ____B7____ 五、發明說明（3Q) u V光晶圓照明系統之較佳實施例特色爲以下主要部份： (1 )光學顯微鏡，特色爲一寬頻帶物鏡系統，一寬頻帶 照明徑路，及一寬頻帶管透鏡；（2 ) —原始紫外光源， 由此，原始紫外光源爲光學顯微鏡晶圓檢查或量度系統之 一部份；（3) —裝置用以自原始光源產生多頻帶紫外光 源，此執行原始紫外光源之寬頻帶濾波或分立頻帶濾波； 及（4 )欲使用多頻帶紫外光源照明之晶圓。本發明系統 之較佳實施例之其他組成件包含（5 ) —攝影機，具有感 光攝影機表面用以經由寬頻帶管透鏡接收來自晶圓表面之 多頻帶U V光之聚焦之影像反射及散射；及（6 )資料處 理裝備，用以數位化晶圓表面之光強度特徵之分佈，儲存 光強度之數位化分佈，及處理所儲存之光強度之數位化分 佈。用以處理晶圓之表面之光強度特徵之數位化之分佈之 處理裝備具有，但不限於晶圓缺陷偵測，晶圓光學覆蓋量 度，及晶圓光學臨界幅度量度之特殊演算法。 雖以其特定實施例說明本發明，但顯然，精於本藝之 人士可作許多更改，修改及改變。故此，所有此等更改， 修改，及改變應包含於後附之申請專利之精神及廣泛之範 圍內。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 33 - — 卜 — — u----IAWI I — — —— — — II ^iLII—Γ — (請先閱讀背面之注咅？事項再填寫本頁)-LWI «Ίδι ·.« This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -30-594001 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __B7____ V. Description of Invention (28) ) Equivalent curves 1 3 2 and 1 3 4 obtained by using monochromatic UV light illumination and multi-band UV light illumination method respectively, and those obtained by using wide-band white light illumination are equivalent to the simulated image of FIG. 3 A 3 8 a (that is, from top to bottom along & 21, 66, defects 46a, 48a, 50a, and 52a, and edge areas of the patterns 40a, 42a, and 44a, and the wafer surface area 5 6 a) Compared with the curve 1 3 0, the display shows a significant change in pixel brightness. However, the change in pixel brightness equivalent to multi-band UV light illumination (Figure 3C) shown by curve 1 34 is significantly lower than that shown by curve 1 32 2 equivalent to monochromatic UV light illumination (Figure 3B). Changes in pixel brightness. This result is consistent with the discussion in FIG. 3C. Therefore, the multi-band UV light illumination method can achieve a higher system resolution than the monochrome UV light illumination method. Figure 7 shows a line diagram of the image amplitude or pixel brightness (gray scale) versus the number of pixels, which is equivalent to the image grid columns shown in the simulated wafers in Figure 2 and the simulated images in Figures 3 A to 3 C. 5 3 Section line. In FIG. 7, curves 150 ′ 152 ′ and 154 are line diagrams of image amplitude or pixel intensity (in gray scales) versus number of pixels, and are cross-section lines along the pixel grid column 53 (in the wafer diagram). 10 is marked by 3 4 and simulated images 38a, 38b, and 38c are marked by 64, 74, and 84, respectively.) Viewed from left to right, they are equivalent to applications using wideband white light wafer lighting. UV light wafer lighting, and multi-band UV light wafer lighting methods. In all of the curves 150, 152, and 154, the steep decrease in pixel brightness at less than 5 pixels indicates that the diffraction effect occurs at the edge of the field of view of the exemplary wafer 10 in FIG. 2 and is related to the light illumination. --T ---: ----- I ^ -------- ^ ------.-- (Please read the notes on the back before filling this page) This paper size is applicable to China Standard (CNS) A4 specifications (210 X 297 mm) — 31-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 594001 A7 B7 _ V. Description of the invention (29) Image resolution in different methods of wafers' diffraction effect The discussion of the difference in system resolution is irrelevant. The gist of Figure 7 is as follows. There are no patterns or defects on the row 5 3 of the pixel grid in the exemplary wafer map 10 or the simulated images 38a, 38b ', and 38c (Figures 3A' 3B, and 3C, respectively) of Figure 2. Therefore, there is no comparison of image resolutions related to patterns or defects. Comparison of the diffraction effect caused by the interaction between the illumination source and the round pattern or defect edge presented on the non-standard wafer 10 in Fig. 2 'In the range of 7 to 65 pixels, it is equivalent to the figure 3 B's simulated image 3 8 a (that is, viewed from left to right along the column 5 3, 7 4, the bottom edge of the defect 4 4 b and the wafer surface area 5 6 b) and the simulated image of FIG. 3 C 3 8 c (that is, viewed from left to right along the row 5 3, 8 4, the bottom edge region of the pattern 4 4 c and the wafer surface region 5 6 c) are illuminated by monochrome UV light and multi-band UV light, respectively The curves 1 5 2 and 1 5 4 of FIG. 7 obtained by the method are equivalent to the simulated image 3 8 a of FIG. 3 A obtained by using wide-band white light illumination (that is, from the left to the top along the line 5 3, 6 4 On the right, the bottom edge of the pattern 4 4 a and the curve 1 50 of the wafer surface area 5 6) show a significant change in pixel brightness. However, the change in pixel brightness shown by curve 1 5 4 equivalent to multi-band UV light illumination (Fig. 3C) is significantly lower than that shown by curve 1 5 2 equivalent to monochromatic UV light illumination (Fig. 3 B). Changes in pixel brightness. As shown in the discussion of Figs. 4 and 6, this inclusion is consistent with the discussion of Fig. 3C. Therefore, the multi-band U V light illumination method can achieve a higher system resolution than the monochromatic u V light illumination method. The multi-band optical paper wafer inspection and measurement system of the present invention is a multi-band size paper standard (CNS) A4 specification (210x 297 public love) -32- " (Please read the precautions on the back before filling this page )-Binding-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 594001 A7 ____B7____ V. Description of the Invention (3Q) The preferred embodiment of the u-V wafer lighting system is characterized by the following main parts: (1) Optical microscope, features It is a wide-band objective lens system, a wide-band illumination path, and a wide-band tube lens; (2)-the original ultraviolet light source, so the original ultraviolet light source is part of an optical microscope wafer inspection or measurement system; ( 3) —The device is used to generate a multi-band ultraviolet light source from the original light source, which performs wide-band filtering or discrete-band filtering of the original ultraviolet light source; and (4) a wafer to be illuminated with a multi-band ultraviolet light source. Other components of the preferred embodiment of the system of the present invention include (5)-a camera with a photosensitive camera surface for receiving focused image reflection and scattering of multi-band UV light from the wafer surface through a wideband tube lens; and ( 6) Data processing equipment for digitizing the distribution of light intensity characteristics on the wafer surface, storing the digitizing distribution of light intensity, and processing the digitizing distribution of stored light intensity. The processing equipment used to process the digitized distribution of light intensity characteristics on the surface of the wafer has, but is not limited to, special algorithms for wafer defect detection, wafer optical coverage measurement, and wafer optical critical amplitude measurement. Although the present invention has been described with its specific embodiments, it is obvious that those skilled in the art can make many changes, modifications and alterations. Therefore, all such changes, modifications, and alterations should be included in the spirit and broad scope of the attached patent application. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) _ 33-— Bu — — u ---- IAWI I — — — — — II ^ iLII—Γ — (Please read the back first Note: Please fill in this page for matters)