TW593769B - Plasma polishing method for titanium and titanium alloy products - Google Patents

Plasma polishing method for titanium and titanium alloy products Download PDF

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TW593769B
TW593769B TW92105522A TW92105522A TW593769B TW 593769 B TW593769 B TW 593769B TW 92105522 A TW92105522 A TW 92105522A TW 92105522 A TW92105522 A TW 92105522A TW 593769 B TW593769 B TW 593769B
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titanium
polishing method
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patent application
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TW92105522A
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TW200417629A (en
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Tai-Huang Lai
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Cosmos Vacuum Technology Corp
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Abstract

A plasma polishing method for titanium and titanium alloy products comprises: mounting a to-be-polished titanium or titanium alloy product in an electrolyte solution based on ammonium (NH4+) ions; and generating an air gap by using a d.c. voltage output to cause the electrolyte solution on the periphery of the to-be-polished article working as a positive electrode to undergo a instant vaporization due to a high electric potential difference. Such a continuous air gap will form a wrapping air film on the surface of the to-be-polished article, in which the vaporized particles in the air film form a discharge plasma due to dissociation by the high voltage, and the protruded portions on the surface of the to-be-polished article are flattened by the discharge plasma, thereby forming a mirror-like smooth surface and achieving the objective of polishing.

Description

593769 五、發明說明(1) 【發明所屬.之技術領域】 本發明;係關於一種鈦及鈦合金製品的拋光方法,特別是 關於一種利用電漿拋光鈦及鈦合金製品的方法。 【先前技術】 鈦金屬及鈦合金因為具有質輕、高強度、優異的抗腐蝕 性,並且對於人體皮膚不會產生過敏等特性,因此被廣泛的 應用在各種領域。鈦金屬在機械特性上具有高相對強度(抗張 力/密度)、高拉伸強度、抗疲乏、耐撞擊性以及高抗熱性等 特性,因此已被應用於航太工業、運動器材、自行車零件、 高爾夫球頭、眼鏡及其他多項民生製品上。此外,鈦金屬及 鈦合金不會使人體皮膚產生過敏反應,因此可以取代以往會 造成皮膚發癢或皮膚炎的鎳或鎳合金製品。另外,鈦金屬及 鈦合金可應用於醫療器材,如鑷子,並且可作為生物體植入 物的材料,如骨骼固定板、螺絲和脊椎支持籠(Cage)等。正 因為欽金屬及敍^合金的應用廣泛’因此’欽材料的加工也日 益受到重視,其中拋光過程可處理加工過程所形成的粗糙 面,並且賦予產品更佳的質感,因此是整個鈦金屬及鈦合金 加工過程中不可或缺的加工程序。 習知的鈦金屬及鈦合金的拋光方法大致上可分為三種, 即機械抛光法、化學抛光法以及電解抛光法等方法,但是各 有其限制及缺點。 習知的機械拋光法耗費人力,並且比較適合平面材料, 對於非平面的材料,將有無法拋光的死角。此外,鈦金屬為593769 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for polishing titanium and titanium alloy products, and particularly to a method for polishing titanium and titanium alloy products by using a plasma. [Prior technology] Titanium and titanium alloys are widely used in various fields because they are lightweight, high strength, excellent corrosion resistance, and do not cause allergies to human skin. Titanium has mechanical properties such as high relative strength (tensile / density), high tensile strength, fatigue resistance, impact resistance, and high heat resistance, so it has been used in aerospace industry, sports equipment, bicycle parts, golf Ball heads, glasses and many other livelihood products. In addition, titanium and titanium alloys do not cause allergic reactions in human skin, so they can replace nickel or nickel alloy products that previously caused itchy or dermatitis skin. In addition, titanium and titanium alloys can be used in medical equipment, such as tweezers, and as materials for biological implants, such as bone fixation plates, screws, and spinal cages. Because of the wide application of Chin metals and alloys, the processing of Chin materials has also received increasing attention. The polishing process can handle the rough surface formed by the processing and give the product a better texture. Therefore, it is the entire titanium metal and An indispensable machining program in the processing of titanium alloys. The conventional polishing methods of titanium metal and titanium alloy can be divided into three types, namely mechanical polishing method, chemical polishing method and electrolytic polishing method, but each has its limitations and disadvantages. The conventional mechanical polishing method is labor-intensive and is more suitable for flat materials. For non-planar materials, there will be dead corners that cannot be polished. In addition, titanium is

593769 五、發明說明(2) 一種活性金屬,經過鏡面拋光處理一段時間後,鏡面的表面 性狀又會氧化’因此深井英明等人於日本專利JP4 0 4 1 6 5 6揭示 了一種利用熱處理的技術,來防止鏡面表面性狀氧化的現 象。但是’此種熱處理的方法所使用的溫度相當高(3 〇 〇〜8 〇 〇 ’同時需要控制在高真空度(1〇 —3 t0]rr)的環.境中進行拋 光。另外’平田修一等人在日本專利jP617〇721中揭示了另一 種在抛光研磨時加入氧化劑的技術,其目的是使鈦金屬表面 形成一表面氧化層,以防止研磨劑埋入並混入鈦金屬表層而 开> 成研磨劑層,並藉此改善研磨拋光效果。但是此種方法仍 較適於處理平面板材,對於立體曲面或有孔洞等製品,在處 理上有盲點及困難處。 習 棘聯專 氫氟酸 液來進 示一種 氫氟酸 一段的 而完成 度的酸 對環保 製品而 知的化學拋光法多利用酸性溶液對鈦金屬作處理,如 利SU1 7 1 5887所揭示的利用硝酸、硫酸、4〇%的醋酸及 以25〜30%: 40〜45%: 2~5%: 25〜28%的比例所混合的水 行拋光。另外,松尾智幸等人於日本專利Jp4〇88l78揭 二段式化學拋光法,其係先將鈦製品在磷酸、醋酸盥 的混合溶,(混合比例為2: 1:丨)中加熱至5叱進行第 拋光,接著再以7 . 1的混合比例混合雙氧水與氫氟酸 第二段的抛光。由此可知,化學拋光法大多利用高濃 性溶液,對於廢酸液的回收或處理,將會產生問題, 上也可能造成不利的影響。此外,對於抛光完成的鈦 言,因為材料微觀表面不同相(Phase)之間或晶粒 (Grain)與晶界(Grain boundary)之間的蝕刻速率有差異,將 使成品·表面難以達到光亮平整的效果。593769 V. Description of the invention (2) An active metal that undergoes mirror polishing treatment for a period of time, and the surface properties of the mirror surface will oxidize again. Therefore, Tokui Fukai et al. In Japanese patent JP 4 0 4 1 6 5 6 discloses a technique using heat treatment , To prevent the phenomenon of mirror surface properties oxidation. However, the temperature used in this heat treatment method is quite high (300 ~ 800). At the same time, it is necessary to control the polishing in a high vacuum (10-3 t0) rr. In addition, Hirata Shuichi Et al. In Japanese patent jP617〇721 discloses another technique of adding an oxidizing agent during polishing and grinding, the purpose of which is to form a surface oxide layer on the surface of titanium metal to prevent the abrasive from being embedded and mixed into the surface of titanium metal. ≫ To form an abrasive layer and improve the polishing effect. However, this method is still more suitable for processing flat plates. For products with three-dimensional curved surfaces or holes, there are blind spots and difficulties in processing. Xilianlian Hydrofluoric Acid The chemical polishing method known for environmentally friendly products, such as a hydrofluoric acid one-stage complete acid, is used to treat titanium metal using an acidic solution, such as the use of nitric acid, sulfuric acid, 4 ° as disclosed in Lee SU1 7 1 5887. % Acetic acid and water polishing mixed in a ratio of 25 ~ 30%: 40 ~ 45%: 2 ~ 5%: 25 ~ 28%. In addition, Matsuo Tomoyuki et al. Disclosed a two-stage chemistry in Japanese patent Jp4088l78. Polishing method First, the titanium product is mixed with phosphoric acid and acetic acid, and the mixture is heated to 5 叱 for the first polishing, and then the hydrogen peroxide and hydrofluoric acid are mixed in the second mixing ratio of 7.1. It can be seen that most of the chemical polishing methods use high-concentration solutions, which will cause problems for the recovery or treatment of waste acid liquid, and may also cause adverse effects. In addition, for the titanium finished polishing, because of the material There are differences in the etching rate between different phases of the microscopic surface (Phase) or between the grains (Grain) and the grain boundary (Grain boundary), which will make it difficult for the finished product and surface to achieve a bright and smooth effect.

第5頁 593769 發明說明(3) 至於電解拋光法方面,如同化學拋光法,也需利用高濃 度的酸性溶液作為電解液,如Urad〇ren Mlhairc)buitsuchl 汕y等^於日本專利JP5 6 0 1 6 7 0 0所揭示的利用硫酸、硝酸及 氮氣酸並且混合表面活性劑所成之水溶液做為鈦及鈦合金的 電解拋光液,此種方法仍存在著高毒性、高危險性、製程管 理不易以及廢液污染等種種問題。 因此,由上述可知,習知技術中存在著加工技術上的限 ,以及其他多項不易處理的缺點,因此,若能提供一種製程 簡便、安全性·向、.並且加·工成品優良的方法,將能降低拋光 製程的成本,並且進一步提昇鈦製品的利用性。 【發明内容】 本發明之目的之一為,提供一種快速、便宜的拋光方 法,使鈦及鈦合金製品能得到潔淨光亮的表面,賦予成品更 佳的質感。 本發明之另一目的為,改 驟,可同步進行除油、除鏽、 而增加效率,減少不便及浪費 本發明之再一目的為,提供無 減少製程中的危險性,同時低 題’並且可以節省配製溶液的 本發明之又一目的為,提 何形狀的欽製品,包括具有曲 等鈦製品,並且使抛光完成的 善習知抛光技術中的前處理步 脫脂、清洗與拋光的製程,進 〇 毒性與無污染性的電解溶液, 濃度的電解液不會造成環保問 成本。 供一簡便快速的方法來拋光任 面 '中空管狀物以及立體形狀 被抛光物表面不受任何化學物Page 559769 Description of the invention (3) As for the electrolytic polishing method, like the chemical polishing method, it is also necessary to use a high concentration acid solution as the electrolyte, such as Uradoren Mlhairc) buitsuchl Shany et al. ^ Japanese Patent JP 5 6 0 1 The aqueous solution made of sulfuric acid, nitric acid and nitrogen acid and mixed with surfactants as disclosed in 6 7 0 is used as the electrolytic polishing solution of titanium and titanium alloys. This method still has high toxicity, high risk and difficult process management. And various problems such as waste liquid pollution. Therefore, from the above, it can be known that there are limitations in processing technology in the conventional technology and other shortcomings that are not easy to handle. Therefore, if a method can be provided which is simple, safe, safe, and excellent in processed products, Will reduce the cost of the polishing process, and further improve the availability of titanium products. [Summary of the Invention] One of the objects of the present invention is to provide a fast and cheap polishing method, so that titanium and titanium alloy products can obtain a clean and bright surface, and give the finished product a better texture. Another object of the present invention is to improve oil removal and rust removal simultaneously, so as to increase efficiency, reduce inconvenience and waste. Another object of the present invention is to provide no reduction of risks in the manufacturing process, and at the same time reduce the problem. Another object of the present invention that can save the preparation of the solution is to mention the shape of the Chin products, including titanium products having curved and other titanium products, and the process of degreasing, cleaning, and polishing in the well-known polishing technology of polishing. Into the toxic and non-polluting electrolytic solution, the concentration of the electrolyte will not cause environmental protection costs. Provides a quick and easy method for polishing any surface 'hollow tube and three-dimensional shape The surface of the polished object is free of any chemicals

第6頁 593769 五、發明說明(4) 質的污染。 本發明係一種利用電漿拋光方式,拋光缺及S人 表面的方法。此電漿拋光法是先S己製總濃度為工鈦,金製品 離子(N Η /)為基礎的電解液,將鈦及鈦合金製、σ 1 5 % ’並以錄 入電解液中,透過直流電壓的輸出,使得正極°°待,待拋光物置 的電解溶液因高電位差而瞬間蒸發產生氣泡袋(Ai光物周圍、 進而形成連續性的氣膜,此氣膜内所產生的放電’並1 被拋光物表面,同時,被拋光物表面因電化學作 R s 人 極氧化。.當姓刻速率與氧化速率達到最佳比二時用=f := 光物表面造成優良的抛光效果。此外,高電位差透過在被拋 光物表面與氣膜間形成電場’相對於局部突起處的周圍區 域’被抛光物表面的局部突起處具有較大的電場,因此,該 處的電漿蝕刻速率亦較大。隨著處理時間的增加,被拋光物 表面的粗糙度將隨之降低,最終達成完全平整的拋光面。因 此,只要待拋光物為導電體,如鈇或鈦合金製品,並且可浸 入電解液中,即可進行電解拋光。另外,不論待抛光物之形 狀為何,如曲面之立體製品或是中空管狀物製品,只要其能 浸泡於電解液中,均可進行外表面及内面的抛光。 以下將以具體實施例進一步說明本發明,下述實施例係 枯::月本卷明,並非用以限定本發明之範圍,任何熟習此 盥;銳,fT離本發明之精神和範圍内,當可做些許更動 ^定者為^ t發明之保護範圍當視後附之申請專利範圍所Page 6 593769 V. Description of the invention (4) Quality pollution. The invention relates to a method for polishing the surface of a person with a plasma polishing method. This plasma polishing method is based on an electrolytic solution with a total concentration of industrial titanium and gold ions (N Η /). It is made of titanium and titanium alloy, σ 1 5% 'and recorded in the electrolytic solution. The output of the DC voltage makes the positive pole °° waiting, and the electrolytic solution placed on the object to be polished evaporates instantly due to the high potential difference to generate a bubble bag (around the Ai light object, and then a continuous air film is formed. 1 The surface of the object to be polished, at the same time, the surface of the object to be polished is electrochemically oxidized by R s. When the surname engraving rate and the oxidation rate reach the optimal ratio of two, use = f: = the surface of the object to produce an excellent polishing effect. In addition, the high potential difference passes through the formation of an electric field between the surface of the object to be polished and the air film, 'relative to the surrounding area where the local protrusions' has a larger electric field at the local protrusions on the surface of the polished object, so the plasma etching rate there is also Larger. As the processing time increases, the roughness of the surface of the object to be polished will decrease, and a completely flat polished surface will eventually be achieved. Therefore, as long as the object to be polished is a conductor, such as hafnium or titanium alloy products, and Electrolytic polishing can be performed in the electrolyte. In addition, regardless of the shape of the object to be polished, such as curved three-dimensional products or hollow tubular products, as long as it can be immersed in the electrolyte, the outer and inner surfaces can be polished. Polishing. The following will further illustrate the present invention with specific examples. The following examples are dry: The book is not intended to limit the scope of the present invention, anyone familiar with this toilet; sharp, fT is outside the spirit and scope of the present invention Within the scope of the invention, the scope of protection of the invention shall be regarded as the scope of the patent application attached.

$ 7頁 593769 五、發明說明(5) 【實施方式】 義^體實施例1 以150x150x3 mm的純鈦平柄兔上、&、。 化銨水溶液,並將工作電流、二式鲂认加’配製卜8 %的氯 疋為2 8 0〜380V,電解液之加熱溫度為7〇~9 m才工作電壓畜 及相對反射率,其結果如表—所示。立中,面粗糙度 是以觸針式表面粗糙度儀所量相 粗糙度(Ra) 所示: 里測而相對反射率之計算如下 相對反射率(% )=(光澤計量測值/複 Χ100% ]值/銀鏡1測值(視為100%反射) 由表一中可看出,隨著拋光時間增加, 降低,而相對反射率則.决速增加,電聚抛*7分鐘Ί迅速 由原來的0.7Μ m下降至0.1U m,而相對反射率由 9 1 %。由此可見,本發明以相當溫和的處理條件,即可達 良的抛光效果。 具體實施例2 以Ti-6A1_4V的鈦合金高爾夫球頭為試驗樣品,其尺寸為 長130mm,寬90mm,高54mm之中空鑄造體,配製〇· 5〜5%的氯化 錢及0 · 5〜5 %的氣化銨的混合溶液為電解液,並將工作電流密 度設定為0.42A/cm2,工作電壓設定為300〜420V,電解液之加 熱溫度為6 0〜9 5°C,在前述條件下進行電漿拋光。因為此具體$ 7 页 593769 V. Description of the Invention (5) [Embodiment] The first embodiment of the example is a 150x150x3 mm pure titanium flat-handled rabbit, &. Ammonium hydroxide aqueous solution, and the working current and the formula II are added to prepare 8% of chlorosulfonium to be 2 0 8 to 380V, and the heating temperature of the electrolyte is 70 to 9 m before the working voltage and relative reflectance are calculated. The results are shown in Table—shown. In the middle, the surface roughness is shown by the phase roughness (Ra) measured by the stylus surface roughness meter: The relative reflectance is measured as follows. The relative reflectance (%) = (gloss measurement value / repetition) Χ100%] value / Measurement value of silver mirror 1 (considered as 100% reflection) As can be seen from Table 1, as the polishing time increases, the relative reflectance decreases. The speed of determination increases, and the electro-polishing throws for 7 minutes. From the original 0.7M m to 0.1U m, and the relative reflectance from 91%. It can be seen that the present invention can achieve a good polishing effect under fairly mild processing conditions. Specific Example 2 Ti-6A1_4V The titanium alloy golf head is a test sample. Its dimensions are 130mm in length, 90mm in width, and 54mm in height. It is a hollow cast body. It is formulated with a mixture of 0.5 to 5% chlorinated chloride and 0.5 to 5% gasified ammonium. The solution is an electrolytic solution, and the working current density is set to 0.42A / cm2, the working voltage is set to 300 to 420V, and the heating temperature of the electrolytic solution is 60 to 95 ° C. Plasma polishing is performed under the foregoing conditions. Because of this, specific

第8頁 593769 五、發明說明(6) 實施例中之樣品為立體弧形,因此難以測量表面粗糙度的變 化,而僅以光澤計量測固定位置之相對反射率表示,其相對 反射率之測定及計算與具體實施例1相同,其結果如表二所 示。 表二中顯示隨著拋光時間增加,相對反射率.快速增加, 電漿拋光5分鐘後,不論電壓為3 8 Ο V或4 2 Ο V,均可大幅提昇被 拋光樣品的相對反射率。由此可見,對於立體形狀如具有曲 面的物體,本發明之電漿拋光法也能提供絕佳的拋光效果。 具體實施例3 以T i - 6 A卜4 V的鈦合金螺釘為試驗樣品,此螺釘為醫療用 人體植入物,其尺寸為長10mm,直徑約為6mm。先配製0.5〜5杉 的氯化銨,0 . 5〜5 %的硫酸銨及0 . 5〜5 %的氯化銨的混合溶液為 電解液,並將工作電流密度設定為0. 1A/cm2,工作電壓設定為 2 1 0〜3 2 0 V,電解液之加熱溫度為7 5〜9 6°C,在前述條件下進行 電漿拋光。因為螺釘樣品之表面粗糙度及相對反射率難以測 量,因此此處以抛光前包含二組螺紋之光學顯微鏡金相照片 與相同位置拋光1分鐘後的金相照片(如第一圖所示及第二圖 所示)加以對照。由第一圖及第二圖的照片顯示,拋光後的螺 紋毛邊已去除,而表面也變的非常光亮,此外,溝槽内的加 工紋路已被去除並整平。 由上述說明及具體實施例中可發現,本發明鈦及鈦合金 製品的電漿拋光方法可徹底改善習知技藝的缺點,並且製程 簡便,適用於任何形狀的鈦製品,提高作業的安全性,並且Page 8 593769 V. Description of the invention (6) The sample in the embodiment is a three-dimensional arc, so it is difficult to measure the change in surface roughness. It is only expressed by the relative reflectance of the fixed position measured by gloss measurement, and the relative reflectance of The measurement and calculation are the same as those in Example 1. The results are shown in Table 2. Table 2 shows that as the polishing time increases, the relative reflectance increases rapidly. After 5 minutes of plasma polishing, the relative reflectance of the polished sample can be greatly improved, regardless of the voltage of 3 8 0 V or 4 2 0 V. It can be seen that the plasma polishing method of the present invention can also provide excellent polishing results for objects with three-dimensional shapes such as curved surfaces. Specific Example 3 A titanium alloy screw of T i-6 A and 4 V is used as a test sample. This screw is a medical human implant. Its size is 10 mm in length and 6 mm in diameter. 1A / cm2 First prepare 0.5 ~ 5 fir ammonium chloride, 0.5 ~ 5% ammonium sulfate and 0.5 ~ 5% ammonium chloride mixed solution as the electrolyte, and set the working current density to 0. 1A / cm2 The operating voltage is set to 2 0 ~ 3 2 0 V, the heating temperature of the electrolyte is 7 5 ~ 9 6 ° C, and the plasma polishing is performed under the aforementioned conditions. Because the surface roughness and relative reflectance of the screw sample are difficult to measure, the metallographic photo of an optical microscope containing two sets of threads before polishing and the metallographic photo after polishing at the same position for 1 minute (as shown in the first figure and the second (Shown). The photos in the first and second pictures show that the polished burrs have been removed, and the surface has become very bright. In addition, the processing lines in the grooves have been removed and leveled. From the above description and specific examples, it can be found that the plasma polishing method of titanium and titanium alloy products of the present invention can completely improve the shortcomings of the conventional technology, and the process is simple, applicable to titanium products of any shape, and improving the safety of operation. and

593769593769

第10頁Page 10

593769 圖式簡單說明 之螺 光後之;目 第一圖為T i - 6 A卜4 V鈦合金螺釘在電漿拋光前後之一組螺 紋光學顯微鏡金相照片。第一圖(A )為電漿拋光前 紋光學顯微鏡金相照片,第一圖(B )為電漿拋 同位置的該組螺紋光學顯微鏡金相照片。 第二圖為Ti-6A 1-4V鈦合金螺釘在電漿拋光前後之另一組 螺紋光學顯微鏡金相照片。第二圖(A )為電漿拋光 前之螺絲溝槽光學顯微鏡金相照片,第二圖(B )為 電漿拋光後之相同位置的該組螺絲溝槽光學顯微鏡 金相照片。593769 A simple illustration of the screw after the light; head The first picture is a group of screw optical microscope metallographic photos of Ti-6A and 4V titanium alloy screws before and after plasma polishing. The first image (A) is an optical microscope metallographic photograph of the plasma polishing grain, and the first image (B) is the metallographic image of the threaded optical microscope at the same position of the plasma polishing. The second picture is another group of metallographic pictures of threaded light microscope of Ti-6A 1-4V titanium alloy screw before and after plasma polishing. The second image (A) is a metallographic picture of the screw groove optical microscope before plasma polishing, and the second image (B) is the metallographic picture of the screw groove optical microscope in the same position after the plasma polishing.

第11頁 593769 表一、本發明具體實施例1所得拋光後樣品之表面粗糙度 及相對反射率 拋光時間(min) 表面粗造度(μπι) 相對反射率(%) 〇(拋光前) 0.71 34 0.25 0.67 36 0.5 0.61 44 1 0.49 53 2 0.37 69 3 0.22 82 5 0.13 90 7 0.11 91 593769 表二、本發明具體實施例2所得拋光後樣品之相對反射率 抛光時間(min) 相對反射率(%) 電壓3 80V 電壓420V 〇(拋光前) 58 59 0.5 61 70 1 70 78 2 79 87 3 82 88 5 84 8 8 7 83 86Page 11 593769 Table 1. Surface roughness and relative reflectance of the polished sample obtained in Example 1 of the present invention. Polishing time (min) Surface roughness (μπι) Relative reflectance (%) 〇 (Before polishing) 0.71 34 0.25 0.67 36 0.5 0.61 44 1 0.49 53 2 0.37 69 3 0.22 82 5 0.13 90 7 0.11 91 593769 Table 2. Relative reflectance of the polished sample obtained in the specific embodiment 2 of the present invention. Polishing time (min) Relative reflectance (%) Voltage 3 80V Voltage 420V 〇 (Before polishing) 58 59 0.5 61 70 1 70 78 2 79 87 3 82 88 5 84 8 8 7 83 86

Claims (1)

593769 ^六、申請專利範圍; 1. 一種用於鈦及鈦合金製品的電漿拋光方法,其至少包含下 列步驟: (a)配製含有銨離子(NH4+)的電解液; (b )將該電解液之溫度維持在6 0〜9 8°C的範圍内; (c )將待拋光物浸入該電解液中; (d )對該待拋光物施加2 1 0〜4 2 Ο V的直流正電壓以產放電電 漿進行拋光;以及 (e )拋光完成後,取出已拋光之成品。 2. 如申請專利範圍第1項所述用於鈦及鈦合金製品的電漿拋光 方法,其中該含有銨離子的電解液濃度為1-15%。 3. 如申請專利範圍第1項所述之用於鈦及鈦合金製品的電漿拋 光方法,其中該含有銨離子的電解液包含氯化銨溶液。 4. 如申請專利範圍第1項所述用於鈦及鈦合金製品的電漿拋光 方法,其中該含有銨離子的電解液包含氟化銨溶液。 5. 如申請專利範圍第1項所述之用於鈦及鈦合金製品的電漿拋 光方法,其中該含有銨離子的電解液包含硫酸銨溶液。 6. 如申請專利範圍第1項所述用於鈦及鈦合金製品的電漿拋光 方法,其中該含有銨離子的電解液為1〜8 %氯化銨溶液。593769 ^ Application scope: 1. A plasma polishing method for titanium and titanium alloy products, comprising at least the following steps: (a) preparing an electrolyte containing ammonium ions (NH4 +); (b) electrolyzing the electrolyte The temperature of the liquid is maintained in the range of 60 to 98 ° C; (c) the object to be polished is immersed in the electrolyte; (d) a DC positive voltage of 2 1 0 to 4 2 0 V is applied to the object to be polished Polishing with a discharge plasma; and (e) After polishing is completed, the polished product is taken out. 2. The plasma polishing method for titanium and titanium alloy products as described in item 1 of the scope of the patent application, wherein the concentration of the electrolyte containing ammonium ions is 1-15%. 3. The plasma polishing method for titanium and titanium alloy products according to item 1 of the scope of the patent application, wherein the electrolytic solution containing ammonium ions includes an ammonium chloride solution. 4. The plasma polishing method for titanium and titanium alloy products according to item 1 of the scope of the patent application, wherein the electrolyte containing ammonium ions comprises an ammonium fluoride solution. 5. The plasma polishing method for titanium and titanium alloy products according to item 1 of the scope of the patent application, wherein the electrolytic solution containing ammonium ions includes an ammonium sulfate solution. 6. The plasma polishing method for titanium and titanium alloy products described in item 1 of the scope of the patent application, wherein the electrolyte containing ammonium ions is a 1 to 8% ammonium chloride solution. 第12頁 593769 六、申請專利範圍 7. 如申請專利範圍第6項所述用於鈦及鈦合金製品的電漿拋光 方法,其中該電解液之溫度維持在7 0〜9 8°C的範圍内。 8. 如申請專利範圍第6項所述用於鈦及鈦合金製品的電漿拋光 方法,其中對該待拋光物所施加的直流正電壓為2 8 0〜3 8 Ο V。 9. 如申請專利範圍第7項所述用於鈦及鈦合金製品的電漿拋光 方法,其中對該待拋光物所施加的直流正電壓為2 8 0〜3 8 Ο V。Page 12 593769 VI. Patent Application Range 7. The plasma polishing method for titanium and titanium alloy products as described in item 6 of the patent application range, wherein the temperature of the electrolyte is maintained in the range of 70 to 98 ° C. Inside. 8. The plasma polishing method for titanium and titanium alloy products as described in item 6 of the scope of the patent application, wherein the DC positive voltage applied to the object to be polished is 2 0 0 to 3 8 0 V. 9. The plasma polishing method for titanium and titanium alloy products as described in item 7 of the scope of the patent application, wherein the DC positive voltage applied to the object to be polished is 2 0 0 to 3 8 0 V. 1 〇.如申請專利範圍第1項所述用於鈦及鈦合金製品的電漿拋 光方法,其中該含有銨離子的電解液為0. 5〜5%氯化銨溶液與 0 . 5〜5 %氟化銨溶液的混合溶液。 11.如申請專利範圍第1 0項所述用於鈦及鈦合金製品的電漿拋 光方法,其中該電解液之溫度維持在6 0〜9 5°C的範圍内。 1 2.如申請專利範圍第1 0項所述用於鈦及鈦合金製品的電漿拋 光方法,其中對該待拋光物所施加的直流正電壓為1〇. The plasma polishing method for titanium and titanium alloy products described in item 1 of the scope of the patent application, wherein the electrolyte containing ammonium ions is 0.5 ~ 5% ammonium chloride solution and 0.5 ~ 5 % Ammonium fluoride solution. 11. The plasma polishing method for titanium and titanium alloy products as described in item 10 of the scope of the patent application, wherein the temperature of the electrolyte is maintained in the range of 60 to 95 ° C. 1 2. The plasma polishing method for titanium and titanium alloy products as described in item 10 of the scope of patent application, wherein the DC positive voltage applied to the object to be polished is 300〜420V° 1 3 .如申請專利範圍第1 1項所述用於鈦及鈦合金製品的電漿拋 光方法,其中對該待拋光物所施加的直流正電壓為 300〜420V。300 ~ 420V ° 1 3. The plasma polishing method for titanium and titanium alloy products as described in item 11 of the scope of the patent application, wherein the DC positive voltage applied to the object to be polished is 300 ~ 420V. 第13頁 593769 六、申請專利範圍 1 4.如申請專利範圍第1項所述用於鈦及鈦合金製品的電漿拋 光方法,其中該含有銨離子的電解液為0 . 5〜5 %氯化銨溶液, 0 · 5〜5 %硫酸錢溶液與0 . 5〜5緣化銨溶液的混合溶液。 1 5 .如申請專利範圍第1 4項所述用於鈦及鈦合金製品的電漿拋 光方法,其中該電解液之溫度維持在7 5〜9 6°C的範圍内。 1 6 .如申請專利範圍第1 4項所述用於鈦及鈦合金製品的電漿拋 光方法,其中對該待拋光物所施加的直流正電壓為 210〜320V。 1 7 .如申請專利範圍第1 5項所述用於鈦及鈦合金製品的電漿拋 光方法,其中對該待拋光物所施加的直流正電壓為 210〜320V。 , 1 8.如申請專利範圍第1項所述用於鈦及鈦合金製品的電漿拋 光方法,其中該待拋光物為具有曲面之立體物品。 1 9 .如申請專利範圍第1項所述用於鈦及鈦合金製品的電漿拋 光方法,其中該待拋光物為中空管狀物。 2 0 . —種利用如申請專利範圍第1項所述用於鈦及鈦合金製品 的電漿拋光方法所製成之物品。Page 13 593769 VI. Application for patent scope 1 4. The plasma polishing method for titanium and titanium alloy products described in item 1 of the scope of patent application, wherein the electrolyte containing ammonium ions is 0.5 to 5% chlorine Ammonium hydroxide solution, a mixed solution of 0.5-55% sulfuric acid solution and 0.5-5 ammonium ammonium solution. 15. The plasma polishing method for titanium and titanium alloy products as described in item 14 of the scope of the patent application, wherein the temperature of the electrolyte is maintained in the range of 75 to 96 ° C. 16. The plasma polishing method for titanium and titanium alloy products as described in item 14 of the scope of patent application, wherein the positive DC voltage applied to the object to be polished is 210 ~ 320V. 17. The plasma polishing method for titanium and titanium alloy products as described in item 15 of the scope of the patent application, wherein the positive DC voltage applied to the object to be polished is 210 ~ 320V. 1 8. The plasma polishing method for titanium and titanium alloy products according to item 1 of the scope of the patent application, wherein the object to be polished is a three-dimensional article having a curved surface. 19. The plasma polishing method for titanium and titanium alloy products as described in item 1 of the scope of the patent application, wherein the object to be polished is a hollow tubular object. 20. — An article made using the plasma polishing method for titanium and titanium alloy products as described in item 1 of the scope of the patent application. 第14頁Page 14
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101173361B (en) * 2007-11-29 2010-06-09 西安理工大学 Non-equilibrium liquid condition composite pulse plasma polishing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101173361B (en) * 2007-11-29 2010-06-09 西安理工大学 Non-equilibrium liquid condition composite pulse plasma polishing method

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