TW593711B - Sputtered copper films containing niobium for improving electrical conductivity, thermal stability and hardness properties and method for making the same - Google Patents
Sputtered copper films containing niobium for improving electrical conductivity, thermal stability and hardness properties and method for making the same Download PDFInfo
- Publication number
- TW593711B TW593711B TW91116946A TW91116946A TW593711B TW 593711 B TW593711 B TW 593711B TW 91116946 A TW91116946 A TW 91116946A TW 91116946 A TW91116946 A TW 91116946A TW 593711 B TW593711 B TW 593711B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- niobium
- sputtering
- coating
- sharp
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
593711 五、發明說明(l) -- 由於銅及銅合金因具有極優良的導電性、熱傳性以及 良好的常溫機械性質,所以已被廣泛的使用,但是銅及銅 合金在高溫使用時機械性質較差,因而這些合金材料使用 的溫度皆不高,致其良好的導電性、熱傳性無法受到有效 的運用而使得材料使用上無法突破,再者,近年來,由於 極佳的導電性已使得銅進而取代鋁成為半導體元件中的導 電層’因此’銅的鍍層或薄膜在應用上又增添了更有效的 利用價值;但不論在製程上或是材料方面,使用銅導電層 仍有一些限制,如氧化膜易形成及較低的附著性等。而添 加合金元素的銅合金便成為可能的選擇,然而一添加合金 元素後’銅的導電性隨即下降。為解決這些問題,添加不 互溶元素應是解決之道,這由一些濺鍍銅薄膜的相關文獻 可得知··如】·Ρ· Chu,C· H. Chung,Ρ· Y· Lee,J. M· Rigsbee, and J. Y. Wang,nMicrostructure and Properties of Cu-C Pseudoalloy Films Prepared by Sputter Deposition1’ Metallurgical and Materials Transactions A, 29A, pp· 647-658, (1998)·及J.P·593711 V. Description of the invention (l)-Because copper and copper alloys have excellent electrical conductivity, thermal conductivity, and good room temperature mechanical properties, they have been widely used, but copper and copper alloys are mechanically used at high temperatures. The properties are poor, so the temperature at which these alloy materials are used is not high, so that their good electrical conductivity and thermal conductivity cannot be effectively used, which makes the use of materials impossible to break through. In addition, in recent years, due to the excellent electrical conductivity, Make copper and then replace aluminum as the conductive layer in semiconductor components 'so' copper plating or film has added more effective use value in application; but there are still some restrictions on the use of copper conductive layer in terms of process or materials , Such as easy to form oxide film and low adhesion. Copper alloys with alloying elements have become a possible choice, however, as soon as alloying elements are added, the electrical conductivity of copper decreases. In order to solve these problems, the addition of immiscible elements should be the solution. This can be known from the relevant literature of sputtered copper films.... Such as P Chu, C H. Chung, P Y Lee, J M · Rigsbee, and JY Wang, nMicrostructure and Properties of Cu-C Pseudoalloy Films Prepared by Sputter Deposition1 'Metallurgical and Materials Transactions A, 29A, pp · 647-658, (1998) · 和 JP ·
Chu and Τ· Ν· Lin,’’Deposition,Microstructure and Properties of Sputtered Copper Films Containing Insoluble Molybdenum,’’ Journal of Applied Physics’1,85, 6462-6469(1999).朱瑾,朱閔聖"含钽之銅 鍍層以提升銅鍍層之導電性、高溫穩定性與硬度性質及其 濺鍍製作法π (專利申請案號:088 1 1 3088) 傳統含不互溶元素的銅基金屬複合材料一般皆以急速Chu and Τ · Ν · Lin, "Deposition, Microstructure and Properties of Sputtered Copper Films Containing Insoluble Molybdenum," Journal of Applied Physics' 1, 85, 6462-6469 (1999). Zhu Jin, Zhu Minsheng " Copper plating of tantalum to improve the conductivity, high temperature stability and hardness properties of copper plating and its sputter manufacturing method (patent application number: 088 1 1 3088) Traditional copper-based metal composite materials containing immiscible elements are generally based on rapidly
第6頁 593711 五、發明說明(2) - 冷卻的冶金技術或以粉末冶金方式進行製造,但以此種方 式製造之銅基金屬複合材料’若在高溫下長期使用時,因 不互溶的相會發生粗大化(c〇arsening)現象,致機械性質 驟然喪失’而使材料無法使用。運用濺鍍法(Sputter Deposition)製程將完全不互溶的元素或化合物合成製造 出「過飽和固溶體」(Supersaturated Solid Solution),是濺鍍合成技術(Sputter j)ep〇siti〇n Synthesis)的特點,而其是以「原子長原子」的成長方式 (Atom-by-atom growth)形成所需的材料,所以不需受限 於傳統熱力學如固溶度及相平衡等的限制,而可輕易合成 以往認定為不可能的材料,而此種方法能製造出非平衡相 (Non-equilibrium)、超微粒相的顯微組織(Nano-scale microstructure)結構的金屬複合材料,進而得到非常獨 特且穩定的材料性質及高溫機械強度。這些材料如:銅—碳 (Cu-C)系列[J.p· Chu,C· H· Chung, Ρ· Y· Lee, J· Μ· Rigsbee, and J· Υ· Wang, Metallurgical and Materials Transactions A, 29A, pp· 647-658, ( 1 998)·]朱瑾,朱閔聖”含钽之銅鍍層以提升銅鍍層之導 電性、高溫穩定性與硬度性質及其濺鍍製作法"(專利申請 案说· 088113088)。另一方面,亦有應用濺鍍法形成之 合金薄膜在高溫下產生相的分離而促進材料的性質;如: 鉬-銅(Mo-Cu)濺鍍薄膜在高溫下銅的析出促進了太陽能電 池導線的接合性[G· Ramanath,H.Z. Xiao,L.C. Yang, A. Rockett and L.H. Allen: Journal of AppliedPage 6 593711 V. Description of the invention (2)-Cooling metallurgy technology or manufacturing by powder metallurgy, but copper-based metal composites manufactured in this way 'if used for a long time at high temperature, due to immiscible phases Coarsening will occur, resulting in a sudden loss of mechanical properties, making the material unusable. The Sputter Deposition process is used to synthesize completely immiscible elements or compounds to produce a "Supersaturated Solid Solution", which is a feature of the sputter j synthesis technology. , And it is formed by the "atomic long atom" growth method (Atom-by-atom growth), so it does not need to be limited by traditional thermodynamics such as solid solubility and phase equilibrium, and can be easily synthesized. Materials previously considered impossible, and this method can produce metal composites with a non-equilibrium and nano-scale microstructure structure, resulting in a very unique and stable Material properties and high temperature mechanical strength. These materials such as: Copper-carbon (Cu-C) series [Jp · Chu, C · H · Chung, P · Y · Lee, J · M · Rigsbee, and J · Υ · Wang, Metallurgical and Materials A, 29A , Pp · 647-658, (1 998) ·] Zhu Jin, Zhu Minsheng "Copper plating with tantalum to improve the conductivity, high temperature stability and hardness properties of copper plating and its sputter manufacturing method" (patent application Case study · 088113088). On the other hand, there are also alloy films formed by sputtering to promote phase separation at high temperatures to promote the properties of the materials; such as: Mo-Cu sputtering films at high temperatures. Precipitation promotes the bondability of solar cell wires [G. Ramanath, HZ Xiao, LC Yang, A. Rockett and LH Allen: Journal of Applied
第7頁 593711Page 7 593711
Physics, 1995, Vol· 78(4), ρ· 2435-2440·]。 本創作的材料選擇是不互溶的銅-鈮系列,而主要、 目的是提供銅鍍層中不同含鈮量的組成與濺鍍製程,的β 到含鈮之銅鍍層,經實驗後鍍層具有高溫的穩定性、件 的導電性及硬度性質。 父佳 為便於瞭解本創作所採取的技術與成效,資舉以下# 佳的可行實例,配合附表與附圖說明,其中:[本創作所^ 之鈮及銅含量皆為原子百分比(at%)] 表一所示係實施例中鈮靶材的面積百分比與所得到之 鍵層中的銳含量。 5 表二 所示係實施例中濺鍍製程的重要參數。 圖一所示係實施例中濺鍍製程的純銅與靶材之配置圖。 圖二 所示係實施例中濺鍍製程純銅靶材與不同面積百八 比之銳把材的俯視圖。 圖三 所示係實施例中銅鍍層之鈮含量與鈮靶材面積百分 比及與鑛層沉積速率(Deposition rate)之關圖。 圖四 所示係實施例中含鈮之銅鍍層經X射線光電子質譜 儀(X P S )分析結果顯不:銅與雜*並存。 圖五 所示係實施例中於不銅退火溫度維持一小時後晶格 常數(Lattice parameter)*鍍層中鈮含量之圖。 圖六 所示係實施例中含鈮之銅鍍層掃描式電子顯微鏡橫 切面(Cross - sectional)微觀相片:(a)純銅錄層,(匕)含、 〇· 4%鈮,(c)含4· 5%鈮,及(d)含25%鈮之銅鑛層。 圖七 所示係實施例中含鈮之銅鍍層掃描式電子顯微鏡之Physics, 1995, Vol. 78 (4), p. 2435-2440 ·]. The material choice for this creation is the immiscible copper-niobium series, and the main purpose is to provide the composition and sputtering process of different niobium content in the copper coating, from β to niobium-containing copper coating. After the experiment, the coating has a high temperature. Stability, electrical conductivity and hardness properties of the part. In order to facilitate understanding of the techniques and results used in this creation, Father Jia provided the following # best feasible examples, with accompanying tables and accompanying drawings, where: [The niobium and copper content of this creation ^ are atomic percentages (at% )] Table 1 shows the area percentage of the niobium target and the sharp content in the bond layer obtained in the examples. 5 Table 2 shows the important parameters of the sputtering process in the examples. Figure 1 shows the layout of pure copper and target material in the sputtering process in the embodiment. Figure 2 shows a top view of a pure copper target in the sputtering process and a sharp handle with a different area in one hundred and eight ratios. Figure 3 shows the relationship between the niobium content of the copper coating, the area percentage of the niobium target, and the deposition rate of the mineral layer in the embodiment. Figure 4 shows the results of X-ray photoelectron mass spectrometer (X P S) analysis of copper coatings containing niobium in the examples of the system: copper and impurities * coexist. Figure 5 shows a graph of the Lattice parameter * Nb content in the coating after the copper-free annealing temperature is maintained for one hour in the example. Figure 6 shows a cross-section micrograph of a scanning electron microscope of a copper coating containing niobium in the example: (a) pure copper recording layer, (dagger) containing, 0.4% niobium, (c) containing 4 · 5% niobium, and (d) 25% niobium copper deposits. Fig. 7 shows a scanning electron microscope of a niobium-containing copper coating in the embodiment.
593711 五、發明說明(4) 表面(Planar View)微觀相片:(a)純銅鍍層,及(b)含25% 鈮之銅鍍層。 圖八 所示係實施例中含銳之銅鍍層於不銅退火溫度持溫 一小時後掃描式電子顯微鏡之橫切面微觀相片··(a) 200 〇C,及(b)4〇〇 〇C。 圖九 所示係實施例中含鈮之銅鍍層於不銅退火溫度持溫 一小時後掃描式電子顯微鏡之表面微觀相片:(a)530 °C, 及(b)750 t 〇 圖十 所示係實施例中含鈮之銅鍍層於不銅退火溫度持溫 一小時後之超微硬度值。 圖十一所示係實施例中含鈮之銅鍍層於不銅退火溫度持 溫一小時後之電阻係數值。 本創作組成: 實施例中採用了五項銅鈮組成,如圖一所示,銅含量為75 〜100%,銳為〇〜25%。 壹、本創作含鈮之銅鍍層法: 含銳之銅鍍層在本創作的實施例中是以射頻磁控濺鍍 (Radio Frequency ^ RF Magnetron Sputter Deposition) 製程製得,先將濺鍍真空室抽至3xl0_7t〇rr以下的壓力, 再將高純度氬氣(Ar)導入系統中,以1〇〇]^的能量行鍍層之 工作。純銅及純鈮為靶材之材料,將兩個靶材以共同濺鍍 (C〇-Sputt^ring)的方式行鍍層之工作,兩個靶材之配置 如 所不,再如圖二所示,依鈮靶材内面積百分比例可 得到銅鍍層中所需要之鈮含晉(矣_娇—、預臼刀比例Ί 而文心妮3里(表一所不),將靶材置於基593711 V. Description of the invention (4) Microphotograph of the surface (Planar View): (a) pure copper plating, and (b) copper plating containing 25% niobium. Figure 8 shows a micrograph of a cross-section of a scanning electron microscope of a sharp-copper-containing copper coating after being held at a copper-free annealing temperature for one hour in an example. (A) 200 ° C, and (b) 400 ° C . Figure 9 shows the micrographs of a scanning electron microscope surface of a niobium-containing copper coating after being held at a copper-free annealing temperature for one hour in an example: (a) 530 ° C, and (b) 750 t. Figure 10 It is the ultra-hardness value of the copper plating layer containing niobium in the example after being held at the copper-free annealing temperature for one hour. Figure 11 shows the resistivity values of the niobium-containing copper coating in the embodiment after being held at the copper-free annealing temperature for one hour. The composition of this creation: In the embodiment, five copper-niobium compositions are used. As shown in Figure 1, the copper content is 75 ~ 100%, and the sharpness is 0 ~ 25%. I. Copper plating method containing niobium in this creation: In the example of this creation, the copper plating containing sharpness is made by the Radio Frequency ^ RF Magnetron Sputter Deposition process. First, the sputtering vacuum chamber is evacuated. To a pressure of 3 × 10-7 Torr, a high-purity argon gas (Ar) is introduced into the system, and the plating operation is performed with an energy of 100 Å. Pure copper and pure niobium are the target materials. The two targets are plated in a common sputtering method (Co-Sputt ^ ring). The configuration of the two targets is not as shown in Figure 2. According to the example of the internal area percentage of the niobium target, the niobium content required in the copper coating can be obtained (—_ 娇 —, the ratio of the pre-molded knife) and Wen Xinni 3 li (not shown in Table 1).
第9頁 593711 五、發明說明(5) 材之正下方約1 2公分處,且而知 ^ 定,分為玻璃(作電阻量測用)士 /材則視性質檢測而 用) 動c 貳 目為求鐘層均i ^銅(作微硬度量測 ^ ^ 题過程基材以定速作旋轉運 其它錢鍍製程重要參數謀i 漱々如表二所示。 銅鑛層中銳含量定性I令曰 與疋量之測定: 本創作實施例中,銅鍍屌击 Λ Α θ 中之鈮含量是由電 分析儀(ΕΡΜΑ)測得,其與銳乾分二址疋田,卞做保針 所示。依據圖三的關係圖,我衲叮分τ η ▲ μ r w — 我們可依不同銳的面積比例· 得所需之鈮含量的銅鑛層。同時,圖三亦說明添加銳降; 了銅鍍層沉積速率,印證純鋼與鈮同時在以共同濺鍍方式 行鍍層之工作,然而為進一步慎重地量測鈮是因溶於銅鍍 層中’如圖四所示是X射線光電子質譜儀(xps)分析結果: 銳與銅同時以元素狀態存在於鑛層中。銳在銅鑛層中的影 響尚包括··銅鍍層的晶格常數(Lattice parameter)隨鈮 的增加而增加(如圖五所),而這些增加的晶格常數會隨不 同的退火溫度作不同程度的遞減。此外,銳在銅鐘層中的 影響也可由其微觀組織的變化得知,如圖六所示,銅鍍層 的柱狀晶粒由純銅的〜30Onm細化至〜20Onm的0. 4%鈮含量 及〜100 nm的25%銳含量之銅鑛層,其中以較高倍率顯微組 織觀察得知,25%鈮含量之銅鍍層的每一晶粒皆是由數個 超微粒(Nano-crystallite)所組成(如圖七所示)。顯而易Page 9 593711 V. Description of the invention (5) Approximately 12 centimeters below the material, and it is known that it is divided into glass (for resistance measurement) and material / material for property detection) Dynamic c 贰The objective is to find the average thickness of the bell layer i ^ copper (for micro hardness measurement ^ ^). The substrate is rotated at a constant speed. Other important parameters of the plating process are shown in Table 2. Qualitative determination of the sharp content in the copper ore layer I order and the measurement of the amount: In this creative example, the niobium content in the copper plated strike Λ Α θ was measured by an electrical analyzer (EPMA). As shown in Figure 3. According to the relationship diagram in Figure 3, I 衲 ding points τ η ▲ μ rw — we can obtain the copper layer with the required niobium content according to different sharp area ratios. At the same time, Figure 3 also illustrates the addition of sharp drops; The deposition rate of the copper coating was confirmed, and the pure steel and niobium were co-plated at the same time. However, in order to further carefully measure the niobium was dissolved in the copper coating. (Xps) analysis results: Rui and copper exist in the mineral layer at the same time as the element. Rui is in the copper layer The impact also includes that the lattice parameter (Lattice parameter) of the copper plating layer increases with the increase of niobium (as shown in Figure 5), and these increased lattice constants will decrease to varying degrees with different annealing temperatures. In addition, sharp The effect of the copper bell layer can also be known from the change of its microstructure, as shown in Figure 6, the columnar grains of the copper coating are refined from the pure copper's ~ 30Onm to ~ 20Onm's 0.4% niobium content and ~ 100 nm 25% sharp copper ore layer, in which the microstructure observation at a higher magnification shows that each grain of the copper coating with 25% niobium content is composed of several nano-crystallites (such as (Shown in Figure 7).
第10頁 593711 五、發明說明(6) 參、含鈮之銅鍍層的性質測試: 本創作實施例中’主要研究含鈮之銅鍍層微觀組織細 化及鈮的過飽和固溶於鍍層中,進而提升含鎚之銅鑛層的 高溫穩定性及超微硬度值。如圖八及圖九所示,銅鑛層於 不同退火溫度持溫一小時後顯微結構相片,在低溫(2 〇 〇 C)退火後’銅鍛層之顯微、組織開始有變化,但是在530 °C (〜0· 6Tm)時,銅鍍層中的晶粒開始成長(Gr〇wth)及聚 集(Coalescence),而含銳之銅鍍層仍具有較細化的微觀 組織。在75 0°C (〜0· 8Tm)退火後,雖銅鍍層晶粒已成長, 原先柱狀結構也己消失,但相較於純銅之晶粒,含鈮之銅 鍍層晶粒仍較小,雙晶亦較少(如圖九所示),足證其高溫 的穩定性高。含鈮之銅鍍層超微硬度量測結果,如^十= 示,即使是在高溫退火(75(rc,lhr)處理後,所得之超微 硬度值仍鬲於純銅鍍層(達〜2· 5倍),而未退火前或低溫 退火後,超微硬度值則約為3〜4倍,顯見含鈮之銅鍍層且 溫穩定性。含鈮之銅鍍層的電阻係數量測結果如圖; ::不而=少量之鈮(<2.7%)’因有改善鍍層微觀組織 之使電阻係數值略降低,再經不同溫 退火溫产的ί近純銅塊材的電阻係數值;且隨著 又、9加,電阻係數值下降的愈 - 出適量鈮合U乃顯,進一步顯不 h數值(二層^同時具有高溫穩定性及較低的電 鍍層擁有下列獨創性·· 根據上述,本創作含鈮之鋼 (1)本創作的濺鍍法製程潔淨無污染,鋼與鈮靶材以疊層 第11頁 593711 五、發明說明(7) 共同濺鍵的方式簡易’容易控制鐘層中之含銳量; (2) 因銅與鈮不互溶,含鈮之銅鍍層的超微硬度值高且具 有高溫穩定性; (3) 因為鈮含量的增加,銅鍍層的微觀組織獲得改善,而 具有較低的電阻係數值’是良好的導電鑛層,適用於半導 體產業,進而可取代目前導電性較差的鋁導電層。 綜上所述,本創作所研究之技術及含鈮之銅鍍層的合 金組成與性質實前所未見,符合新穎首創之要件,且在產 業上的利用更具有高度之價值性及應用性,且已充分符合 專利申請之規定,受依法提出專利申請。 雖然本創作是以較佳的實例之製程及合金組成來研 究含鈮之銅鍍層的優異性質,然其並非用以限定本創作, 因比任何學習此項研究,可根據本創作之技術思想做些許 更動與改變,來達到等效的目的。因此,本創作之保護範 圍應包含本創作濺鍍技術之原則而達到具高溫穩定性且 有良好導電性及硬度性質之含鈮的鋼鍍層。Page 10 593711 V. Description of the invention (6) Particular test of properties of copper coating containing niobium: In this creative example, 'the main research is to refine the microstructure of the copper coating containing niobium and the supersaturated solution of niobium in the coating, Improve the high temperature stability and ultra-hardness of copper-bearing ore layers with hammer. As shown in Figures 8 and 9, the microstructure photos of the copper ore layer after being held at different annealing temperatures for one hour. After low temperature (200C) annealing, the microstructure and structure of the copper forging layer began to change, but At 530 ° C (~ 0.6Tm), the grains in the copper plating layer begin to grow (Growth) and coalescence, while the sharp copper plating layer still has a finer microstructure. After annealing at 75 ° C (~ 0 · 8Tm), although the grains of the copper plating have grown and the original columnar structure has disappeared, the grains of the copper plating containing niobium are still smaller than those of pure copper. There are also fewer twin crystals (as shown in Figure 9), which proves its high temperature stability. Measurement results of ultra-hardness of copper coatings containing niobium, as shown by ^ 十 =, even after high temperature annealing (75 (rc, lhr)), the obtained ultra-hardness values are still less than those of pure copper coatings (up to 2.5 Times), and before or after annealing at low temperature, the ultra-hardness value is about 3 ~ 4 times, obviously showing the copper coating containing niobium and temperature stability. The resistivity measurement results of copper coating containing niobium are shown in the figure:: : Not only = a small amount of niobium (< 2.7%) 'due to the improvement of the microstructure of the coating, the resistivity value is slightly reduced, and the resistivity value of the nearly pure copper block produced by annealing at different temperatures; and , 9 plus, the more the resistivity value decreases-the appropriate amount of niobium and U are displayed, and the value of h is further displayed (two layers ^ simultaneously have high temperature stability and low plating layer have the following originality.... According to the above, this creation Niobium-containing steel (1) The original sputtering process is clean and pollution-free. The steel and niobium target are laminated. Page 11 593711 V. Description of the invention (7) The method of common sputtering is simple. Sharp content; (2) Because copper and niobium are not compatible with each other, the ultra-hardness of the copper coating containing niobium is high and has a high value Stability; (3) As the niobium content increases, the microstructure of the copper plating layer is improved, and the lower resistivity value is a good conductive ore layer, which is suitable for the semiconductor industry and can replace the currently poorly conductive aluminum. Conductive layer. In summary, the technology and composition and properties of the niobium-containing copper coatings studied in this creation have never been seen before, which meets the requirements of novelty and innovation, and has a high value in industrial use. Applicability, and has fully met the requirements of patent applications, subject to patent applications in accordance with the law. Although this creation is based on a better example of the process and alloy composition to study the excellent properties of copper coatings containing niobium, it is not intended to limit this The creation, as compared to any study of this research, can be modified and changed according to the technical ideas of this creation to achieve equivalent purposes. Therefore, the scope of protection of this creation should include the principles of this sputtering technology to achieve high temperature Niobium-containing steel coating with stability and good electrical conductivity and hardness properties.
593711 圖式簡單說明 "" "" 表一所示係實施例中鈮靶材的面積百分比與所得到之銅 鍍層中的鈮含量。 表二所示係實施例中濺鍍製程的重要參數。 圖一所示係實施例中濺鍍製程的純銅與靶材之配置圖。 圖二所示係實施例中濺鍍製程純銅靶材與不同面積百分 比之鈮靶材的俯視圖。 圖三所示係實施例中銅鍍層之鈮含量與鈮靶材面積百分 比及與鍍層沉積速率(Deposition rate)之關圖。 圖四 所示係實施例中含鈮之銅鍍層經X射線光電子質譜 儀(XPS)分析結果顯示:銅與銳並存。 圖五所示係實施例中於不銅退火溫度維持一小時後晶格 常數(Lattice parameter)與鍍層中鈮含量之圖。 圖六 所示係實施例中含銳之銅鑛層掃描式電子顯微鏡橫 切面(Cross - sectional )微觀相片:(a)純鋼錄層,(b)含 0.4%銳’(c)含4.5%銳,及(d)含25%鈮之銅鐘層。 圖七 所示係實施例中含鈮之銅鍍層掃描式電子顯微鏡之 表面(Planar view)微觀相片:(a)純銅鍍層,及(b)含25% 鈮之銅鍍層。 圖八 所示係實施例中含銳之銅鍍層於不鋼退火溫度持溫 一小時後掃描式電子顯微鏡之橫切面微觀相片:(a) 200 〇C,及(b)400 〇C 〇 圖九 所示係實施例中含鈮之銅鍍層於不鋼退火溫度持溫 一小時後掃描式電子顯微鏡之表面微觀相片:(a) 530 °C, 及(b)750 〇C。 imra men 第13頁 593711 圖式簡單說明 圖十 所示係實施例中含鈮之銅鍍層於不銅退火溫度持溫 一小時後之超微硬度值。 圖十一 所示係實施例中含鈮之銅鍍層於不銅退火溫度持 溫一小時後之電阻係數值。593711 Brief description of the drawing " " " " Table 1 shows the area percentage of the niobium target in the examples and the niobium content in the resulting copper coating. Table 2 shows the important parameters of the sputtering process in the examples. Figure 1 shows the layout of pure copper and target material in the sputtering process in the embodiment. Figure 2 shows a top view of a pure copper target and a niobium target with different area percentages in the sputtering process in the embodiment. Figure 3 shows the relationship between the niobium content of the copper plating layer, the area percentage of the niobium target, and the deposition rate of the plating layer in the embodiment. Figure 4 shows the results of X-ray photoelectron mass spectrometer (XPS) analysis of the copper coatings containing niobium in the examples shown in the example: copper and sharp coexist. Figure 5 shows a graph of the lattice constant and niobium content in the coating after the copper-free annealing temperature is maintained for one hour in the embodiment. Figure 6 shows a micrograph of a cross-section of a scanning electron microscope of a sharp copper ore layer in the example shown in the example: (a) a pure steel recording layer, (b) 0.4% sharp, (c) 4.5% Sharp, and (d) a copper bell layer containing 25% niobium. Figure 7 shows a microphotograph of a scanning electron microscope (Planar view) surface of a copper coating containing niobium in the embodiment: (a) a pure copper coating, and (b) a copper coating containing 25% niobium. Figure 8 shows a micrograph of a cross-section of a scanning electron microscope of a sharp-copper-plated coating in an example after being held at the annealing temperature of stainless steel for one hour: (a) 200 ° C, and (b) 400 ° C. Figure 9 The micrographs of the scanning electron microscope surface of the copper plating layer containing niobium in the example shown in the example after being held at the annealing temperature of stainless steel for one hour: (a) 530 ° C, and (b) 750 ° C. imra men page 13 593711 Brief description of the figure Figure 10 shows the ultra-hardness value of the niobium-containing copper coating in the example after being held at the copper-free annealing temperature for one hour. Figure 11 shows the resistivity values of the niobium-containing copper coating in the embodiment after being held at the copper-free annealing temperature for one hour.
第14頁Page 14
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91116946A TW593711B (en) | 2002-07-30 | 2002-07-30 | Sputtered copper films containing niobium for improving electrical conductivity, thermal stability and hardness properties and method for making the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91116946A TW593711B (en) | 2002-07-30 | 2002-07-30 | Sputtered copper films containing niobium for improving electrical conductivity, thermal stability and hardness properties and method for making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW593711B true TW593711B (en) | 2004-06-21 |
Family
ID=34075529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW91116946A TW593711B (en) | 2002-07-30 | 2002-07-30 | Sputtered copper films containing niobium for improving electrical conductivity, thermal stability and hardness properties and method for making the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW593711B (en) |
-
2002
- 2002-07-30 TW TW91116946A patent/TW593711B/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112725678B (en) | Non-equal atomic ratio medium/high entropy alloy containing NiCoCr and preparation method thereof | |
Huang et al. | Microstructure, hardness, resistivity and thermal stability of sputtered oxide films of AlCoCrCu0. 5NiFe high-entropy alloy | |
CN1985014B (en) | Material for conductor tracks made of copper alloy | |
JP6381142B2 (en) | Touch screen device | |
TWI245806B (en) | Thin film aluminum alloy and sputtering target to form the same | |
JP5952272B2 (en) | Targets containing molybdenum | |
JP2004532931A (en) | Pt-Co based sputtering target | |
Zhang et al. | Nanocrystalline tetragonal tantalum thin films | |
JP2011504547A (en) | Sputtering target doped with refractory metal | |
Chuang et al. | Lattice buffer effect of Ti film on the epitaxial growth of Ag nanotwins on Si substrates with various orientations | |
Zhang et al. | Microstructure and nanomechanical properties of co-deposited Ti-Cr films prepared by magnetron sputtering | |
Zhang et al. | Microstructure and mechanical properties of Mo-Ta-W refractory multi-principal element alloy thin films for hard protective coatings | |
TWI652352B (en) | Eutectic porcelain gold material | |
Chandra et al. | Synthesis and TEM study of nanoparticles and nanocrystalline thin films of silver by high pressure sputtering | |
CN1370853A (en) | Production process of metal sputtering target | |
JP4673855B2 (en) | Hydrogen separation membrane, sputtering target for forming hydrogen separation membrane, and method for producing the same | |
Chu et al. | Deposition, microstructure and properties of sputtered copper films containing insoluble molybdenum | |
Strzelecki et al. | Multi-component low and high entropy metallic coatings synthesized by pulsed magnetron sputtering | |
JP4817536B2 (en) | Sputter target | |
HUANG et al. | Progress in research on the alloying of binary immiscible metals | |
TW593711B (en) | Sputtered copper films containing niobium for improving electrical conductivity, thermal stability and hardness properties and method for making the same | |
El-Eskandarany | Amorphization process by rod-milling TixAl100− x and the effect of annealing | |
Li et al. | Addition of strong interaction element Fe (or Sn) to improve the stability of solid solution Cu (Ge) film | |
TW476799B (en) | Sputtered copper films containing tantalum for improving electrical conductivity, thermal stability and hardness properties and method for making the same | |
TW574431B (en) | Sputtered copper films containing tungsten for improving electrical conductivity, thermal stability and hardness properties |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |