574431 A7 __—_B7 五、發明説明（1 ) 長久以來銅及銅合金因具有極優良的導電性、熱傳 性、以及適切的常溫機械性質，所以已被廣泛的使用，然 而，銅及銅合金的高溫機械性質較差，因此這些合金材料 使用的溫度皆不高，以致其良好的導電性、熱傳性無法受 5. 到有效的運用。而IBM於1997年九月宣佈期開發成功銅 導線世代，使得銅進而取代鋁成爲半導體元件中的導電 層，因此，銅的鍍層或薄膜在應用上又增添了無可限量的 價値；但不論在製程上或是材料方面，使用銅導電層仍有 一些困擾，如氧化膜易形成、較低的附著性及易與矽反應 :1〇. *等問題。而添加合金元素後，銅的導電性隨即下降。爲解 決這些問題，添加不互溶元素應是解決知道，這由一些濺 鍍銅薄膜的相關文獻可知：如P. Chu，C. H. Chung，P. Y. Lee，J· Μ· Rigsbee, J. Υ· Wang: “Microstructure and Properties of Cu-C Pseudoalloy Films Prepared by Sputter 15· Deposition，” Metallurgical and Materials Transactions A， 1998/02, Vol· 29A，p· 647-658 及 J· P· Chu and T. N. Lin: 經濟部中央標準局員工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁) “Deposition，Microstructure and Properties of Sputtered Copper Films Containing Insoluble Molybdenum，” Journal of Applied Physics，1999/05, Vol. 85, No. 9, p.6462-6469. 2〇. 再者，爲了改善傳統銅及銅合金高溫機械性質不良的 問題，因而有銅與不互溶元素所合成的金屬復合材料，這 些材料所組成的元素由於相互溶解度(Mutual solubility) 相當f氏，因此，同時具有產生高強度的析出硬化及過飽和 強化之雙重特性，比起其它的析出硬化合金具有高溫機械 強度。 · .^ 本紙張尺度適用F國國家ϋ ( CNS ) A4現格（210X297公楚）2 ~ ' 574431 經濟部中央標準局員工消f合作社印製 A7 B7 五、發明説明（2 ) 傳統含不互溶元素的銅基金屬複合材料一般皆以急速 冷卻的冶金技術或以粉末冶金方式進行，但以此種方式製 造之銅基金屬複合，若在高溫下長期使用時，因爲不相溶 的相會發生粗大化(Coarsening)現象，致機械性質驟然喪 5· 失’而使材料無法使用。運用濺鍍法(Spmter Deposition) 製程將完全不互溶的元素或化合物合成製造出「假性合 金」（Pseudo-alloy) ’ 是項灑鑛合成技術(Sputter deposition synthesis)能製造出非平衡（Non-equilibrium)、超微粒相 的顯微組織（Nano_scale microstructure)結構的金屬複合 10· V材料，進而得到非常獨特且穩定的材料性質及高溫機械強 度。迫些材料如·銅-fe(Cu-C)及銅-銷(Cu-Mo)系列。另一^ 方面，亦有應用濺鍍法形成之假性合金薄膜在高溫下產生 相的分離而促進材料的性質；如：鉬-銅（Mo-Cu)濺鍍薄 膜在高溫下銅的析出促進了太陽能電池導線的結合性 15· [G. Ramanath, Η. Z. Xiao, L. C. Yang, A. Rockett and L. H.574431 A7 __—_ B7 V. Description of the Invention (1) Copper and copper alloys have been widely used for a long time due to their excellent electrical conductivity, thermal conductivity, and suitable room temperature mechanical properties. However, copper and copper alloys The high temperature mechanical properties are poor, so these alloy materials are not used at high temperatures, so that their good electrical conductivity and thermal conductivity cannot be used effectively. And IBM announced in September 1997 that it has successfully developed the generation of copper wires, making copper instead of aluminum to become the conductive layer in semiconductor components. Therefore, copper plating or thin films have added an unlimited price in application; In terms of process or materials, the use of copper conductive layer still has some problems, such as easy formation of oxide film, low adhesion and easy reaction with silicon: 10.0. With the addition of alloying elements, the electrical conductivity of copper decreases. In order to solve these problems, the addition of immiscible elements should be solved. This is known from the relevant literature of sputtered copper films: such as P. Chu, CH Chung, PY Lee, J · M · Rigsbee, J. Υ · Wang: " Microstructure and Properties of Cu-C Pseudoalloy Films Prepared by Sputter 15 · Deposition, "Metallurgical and Materials Transactions A, 1998/02, Vol · 29A, p · 647-658 and J · P · Chu and TN Lin: Central Standard of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperative (please read the notes on the back before filling this page) “Deposition, Microstructure and Properties of Sputtered Copper Films Containing Insoluble Molybdenum,” Journal of Applied Physics, 1999/05, Vol. 85, No. 9 , p.6462-6469. 2〇. Furthermore, in order to improve the high temperature mechanical properties of traditional copper and copper alloys, there is a metal composite material composed of copper and immiscible elements. The elements composed of these materials due to mutual solubility (Mutual solubility) It is equivalent to f. Therefore, it has the dual characteristics of high strength precipitation hardening and supersaturation strengthening. Other than the precipitation hardening alloy having a high temperature mechanical strength. ·. ^ This paper size is applicable to country F country (CNS) A4 (210X297), 2 ~ '574431 Employees of the Central Standards Bureau of the Ministry of Economic Affairs, printed by the cooperative, A7 B7 V. Description of the invention (2) Tradition contains no mutual solubility Elemental copper-based metal composites are generally carried out by rapid cooling metallurgy or powder metallurgy, but copper-based metal composites manufactured in this way, if used for a long time at high temperature, because incompatible phases will Coarsening results in sudden loss of mechanical properties and renders the material unusable. Using the Spmter Deposition process to synthesize completely immiscible elements or compounds to produce "Pseudo-alloy" 'It is a sputter deposition synthesis technology that can produce non-equilibrium (Non- Equilibrium), nano-scale microstructure (Nano_scale microstructure) metal composite 10 · V material, and then obtain very unique and stable material properties and high temperature mechanical strength. Forcing materials such as copper-fe (Cu-C) and copper-pin (Cu-Mo) series. On the other hand, there are also pseudo alloy films formed by the sputtering method which promote the properties of materials by phase separation at high temperature; for example: molybdenum-copper (Mo-Cu) sputtering films promote copper precipitation at high temperature The bondability of solar cell wires 15 [G. Ramanath,,. Z. Xiao, LC Yang, A. Rockett and LH
Allen: Journal of Applied Physics，1995，Vol· 78(4)，p· 2435-2440.]。 本創作的材料選擇是不互溶的銅鎢系列，而主要目的 是提供銅鍍層中不同含鎢量的組成與濺鍍製程，而得到含 20· 鎢之銅鏟層具有高溫的穩定性、較佳的導電性和硬度性 質。爲便於瞭解本創作所採取的技術及成效，茲舉以下較 佳的可行實施例，配合附表與附圖說明，其中：[本創作. 所用之鎢及銅含量皆爲原子百分比（at.%)] 表一所示係實施例中鎢靶材的面積百分比與所得到之銅 鑛層中之含鎮量。 * 今求悚尺度適用中國國家標準（CNS ) A4規格（21〇χ297公釐 ϊ---------------訂------ (請先閲讀背面之注意事項再填寫本頁) 574431 A7 五、發明説明（3 ) 表二所示係實施例中濺鍍製程的重要參數。 圖一所示係實施例中濺鍍製程的純銅與鎢靶材之配製 圖。 圖二所示係實施例中濺鍍製程純銅與不同圖二所示係實 5. 施例中濺鑛製程純銅靶與不同面積百分比之鎢靶材 的俯視圖。 圖三所示係實施例中銅鍍層之鎢含量與鎢靶材料面積百 分比及與鍍層沉積速率（Deposition rate)之關係圖。 10. 圖四所示係實施例中含鎢之銅鍍層經X射線光電子質譜 * 儀（XPS)分析結果顯示：銅與鎢元素並存。 圖五所示係實施例中銅鍍層於不同退火溫度持溫一小時 後晶格常數（Lattice parameter)與鍍層中含鎢量之 關係圖。 15. 圖六所示係實施例中含鎢之銅鍍層掃描式電子顯微鏡之 橫切面（Cross-section)微觀相片：（a)純銅鍍層， (b) 2.3%鎢，（c)含 5.3%鎢，及（d)含 11.1%鎢 之銅鑛層。 經濟部中央標準局員工消費合作社印製 (请先閲讀背面之注意事項再填寫本頁) 圖七所示係實施例中含鎢之銅鍍層掃描式電子顯微鏡之 20· 表面（Planar view)微觀相片：（a)純銅鍍層，（b) 11.1%鎢之銅鍍層。 圖八所示係實施例中含鎢之銅鍍層於不同退火持一小時 後掃描式電子顯微鏡之微觀相片（a) 200°C，（b) 400°C及（c) 530°C，（a)_及（b)爲橫切面微觀相片。 圖九所示係實施例中含鎢之銅鍍層之銅鍍層於800°C退 涛 〜( CNS ) A4ii^ ( 210X297^ )4 ' 經濟部中央標準局員工消費合作社印製 574431 A7 __B7_ _____ 五、發明説明（4 ) 火溫度持溫一小時後掃描式電子顯微鏡之表面微觀 相片：（a)純銅鍍層及（b)含11·1%鎢之銅鍍層。 圖十所示係實施例中含鎢之銅鍍層於不同退火溫度持一 小時後之超微硬度値。 5. 圖十一所示係實施例中含鎢之銅鍍層於不同溫度真空退 火持溫一小時後之電阻係數値。 本創造含鎢之銅鍍層組織： 實施例中採用了五項銅鎢的組成，如表一所示，銅含量爲 89%〜100%，鎢爲 0〜11%。 10. *壹、本創造含鎢之銅鍍層製法： 含鎢之銅鍍層在本創作的實施案例中是以射頻磁控濺鍍 (Radio Frequency，RF，Magnetron Sputter Deposition)製 程製得，先將濺鍍真空抽至3χ10_7ωιτ以下的壓力，再將 高純度氬氣導入系統中，以100W的能量行鍍層之工作。 15· 純銅及純鎢爲靶材之材料，以共同濺鍍（Co-sputtering) 的方式行鍍層之工作，兩個靶材之配制如圖一所示；再如 圖二所示。依鎢靶的面積百分比例可得到銅鍍層中所需要 之鎢含量表（表一所示）。將靶材置於基材之正下方約12 公分處，且面朝上。基材成份爲玻璃。爲求鍍層均勻，濺 20* 鍍過程基材以定速作旋轉運動。其他濺鍍製程重要參數詳 . 如表二所示。 貳、銅鍍層中鎢含量定性與定量之測定： 本創.作實施例中，銅鑛層中之鎢含量是由電子微探針 分析儀（ΕΡΜΑ)測得，其與鎢靶材面積的關係如表一及 圖三所示。依據僵三關係圖，吾人可俺不_鶴的面積比例 家標準（CNS)八4祕（21Gx297公羡）5 ' - (請先閲讀背面之注意事項再填寫本頁)Allen: Journal of Applied Physics, 1995, Vol. 78 (4), p. 2435-2440.]. The material choice for this creation is the immiscible copper-tungsten series, and the main purpose is to provide different tungsten-containing compositions and sputtering processes in the copper plating layer. The copper shovel layer containing 20 · tungsten has high temperature stability and is better. Electrical conductivity and hardness properties. In order to facilitate the understanding of the techniques and effects adopted in this creation, the following preferred feasible embodiments are given, accompanied by the attached table and accompanying drawings, where: [This creation. The tungsten and copper content used are both atomic percentages (at.% )] Table 1 shows the area percentages of tungsten targets in the examples and the ballast content in the copper ore layer obtained. * Today's standard is applicable to China National Standard (CNS) A4 specification (21〇 × 297mm ϊ --------------- Order ------ (Please read the note on the back first) Please fill in this page again) 574431 A7 V. Description of the invention (3) Table 2 shows the important parameters of the sputtering process in the embodiment. Figure 1 shows the preparation of pure copper and tungsten targets in the sputtering process in the embodiment. Figure 2 shows the pure copper in the sputtering process in the embodiment and the difference shown in Figure 2. The top view of the pure copper target in the sputtering process and the tungsten target with different area percentages in the embodiment. Figure 3 shows the embodiment The relationship between the tungsten content of the copper coating, the area percentage of the tungsten target material, and the deposition rate of the coating. 10. Figure 4 shows the copper coating containing tungsten in the example shown by the X-ray photoelectron mass spectrometer (XPS) analysis. The results show that copper and tungsten coexist. The relationship between the lattice parameter (Lattice parameter) and the tungsten content in the coating after the copper coating was held at different annealing temperatures for one hour in the example shown in Figure 5 is shown in Figure 5. Cross-section of a scanning electron microscope of copper plating containing tungsten in the example ction) Microphotographs: (a) pure copper plating, (b) 2.3% tungsten, (c) copper ore layers containing 5.3% tungsten, and (d) copper ore layers containing 11.1% tungsten. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ( Please read the precautions on the back before filling this page) Figure 7 shows the 20 · Planar view micrograph of the scanning electron microscope of copper coating containing tungsten in the examples: (a) pure copper coating, (b) 11.1 % Copper plating of tungsten. Figure 8 shows the micrographs of a scanning electron microscope of copper plating of tungsten containing tungsten in different examples for one hour after different annealing (a) 200 ° C, (b) 400 ° C and (c) 530 ° C, (a) _ and (b) are micrographs of the cross-section. The copper plating of the copper plating containing tungsten in the embodiment shown in Figure 9 is at 800 ° C. ~ (CNS) A4ii ^ (210X297 ^) 4 'Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 574431 A7 __B7_ _____ V. Description of the invention (4) Micrograph of the surface of a scanning electron microscope after holding at fire temperature for one hour: (a) pure copper plating and (b) containing 11 · 1% tungsten copper plating. The copper plating layer containing tungsten in the embodiment shown in Figure 10 is held for one hour at different annealing temperatures. Ultra-fine hardness 5. 5. Figure 11 shows the resistivity 値 of the copper plating layer containing tungsten in the embodiment after vacuum annealing at different temperatures for one hour. The structure of the copper plating layer containing tungsten was created: The composition of the five items of copper and tungsten is shown in Table 1. The copper content is 89% to 100%, and the tungsten content is 0 to 11%. 10. * One, the method for creating a copper plating layer containing tungsten is as follows: The creative implementation case is made by radio frequency magnetron sputtering (Radio Frequency, RF, Magnetron Sputter Deposition) process. The sputtering vacuum is first evacuated to a pressure below 3 × 10_7ωιτ, and then high-purity argon is introduced into the system, and 100W Energy line plating work. 15 · Pure copper and pure tungsten are used as target materials, and the coating is performed by co-sputtering. The two target materials are shown in Figure 1 and shown in Figure 2. According to the area percentage example of the tungsten target, the required tungsten content table (shown in Table 1) in the copper plating layer can be obtained. Place the target approximately 12 cm directly below the substrate with the face up. The base material is glass. In order to achieve uniform coating, the substrate is spun at a constant speed during the 20 * plating process. Other important parameters of the sputtering process are detailed in Table 2.定 Qualitative and quantitative determination of tungsten content in copper coatings: In the original example, the tungsten content in copper ore layers was measured by an electronic microprobe analyzer (EPMA), and its relationship with the area of tungsten targets As shown in Table 1 and Figure 3. According to the three-dimensional relationship diagram, we can not _ crane area ratio Home Standard (CNS) eight 4 secrets (21Gx297 public envy) 5 '-(Please read the precautions on the back before filling this page)
經濟部中央標準局員工消費合作社印製 574431 A7 ---------B7^_ 五、發明説明（5 ) 製得所需之鎢含量的銅鍍層7同時，_兰亦說明添加_降 低了鍍層沈積速率，印證純銅與鎢同時在以共同濺鑛方式 行鍍層之工作。爲了進一步慎重地量測鎢是固溶銅鍍層 中，圖四所示是X-射線光電子質譜儀（XPS)分析結果： 5· 鎢與銅同時以元素狀態存在於鍍層中。 鎢在銅鍍層中的影響尙包括：銅鍍詹的晶格常數 (Lattice parameter)隨鎢的增加而增加(如圖五所示），而這 些增加的晶格常數會隨不同的退火溫度做不同程度的遞 減。此外，鎢在銅鍍層中的影響也可由其微觀組織的變化 10* *得知，如圖六所示，銅鍍層的柱狀晶粒由純銅的 〜450-600nm細化至〜150-250nm的2.3%鎢含量及〜50疆 的11.1%鎢含量之銅鍍層，其中以較高倍率顯微組織觀得 知，11.1%鎢含量之銅鍍層的每一晶粒是由數個超微粒 (Nano-crystallite)所組成(如圖七所示）。顯而易見的，鎢的 15. 添加造成銅鍍層沉積速率的降低、晶格常數的增加，亦改: 善銅鍍層的微觀結構，證明鎢已固溶於銅鍍層中。 參、含鎢之銅鍍的性質測試： 本創作實施例中，含鎢之鍍層微觀組織細化及鎢的過 飽和固溶於鍍層中，進而提升含鎢之銅鍍層的高溫穩定性 20. 及超微硬度値。如圖八及圖九所示，銅鍍層於不同退火溫 度持溫一小時後顯微結構相片，在低溫(·2〇〇°〇退火後，純 ,μ 銅鍍層之顯微組織並無太大的變化，但含鎢之銅鍍層已有 富鎢的析出物產生，但是底材遠小於純銅鍍層，在530°C (〜0.6Tm )時，銅鍍層中的晶粒開始成長(Growth)及聚集 (Coalescence)，而富鎢的析出物漸漸：％大，但含鎢之銅鍍 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）6 (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 574431 A7 --------- B7 ^ _ V. Description of the invention (5) At the same time, the copper plating layer 7 with the required tungsten content is produced. The deposition rate of the coating is reduced, which confirms that pure copper and tungsten are performing plating in a common sputtering method. In order to further carefully measure that tungsten is a solid solution copper coating, X-ray photoelectron mass spectrometer (XPS) analysis results are shown in Figure 4: 5. Tungsten and copper are present in the coating at the same time as elements. The effects of tungsten in copper coatings include: the lattice parameter of copper plating increases with the increase of tungsten (as shown in Figure 5), and these increased lattice constants will vary with different annealing temperatures Decreasing degree. In addition, the effect of tungsten in the copper plating layer can also be changed by its microstructure. 10 * * As shown in Figure 6, the columnar grains of the copper plating layer are refined from ~ 450-600nm of pure copper to ~ 150-250nm. The copper plating layer with a tungsten content of 2.3% and a tungsten content of 11.1% with a thickness of ~ 50 Xinjiang, in which the microstructure observation at a higher magnification indicates that each grain of the copper plating layer with a 11.1% tungsten content consists of several ultrafine particles (Nano- crystallite) (as shown in Figure 7). Obviously, the addition of 15. caused a decrease in the deposition rate of the copper coating and an increase in the lattice constant. It also improved the microstructure of the copper coating, proving that tungsten has been dissolved in the copper coating. Participants: Property test of tungsten-containing copper plating: In this creative example, the microstructure of the tungsten-containing coating is refined and the supersaturation of tungsten is dissolved in the coating, thereby improving the high-temperature stability of the tungsten-containing copper coating. 20. and ultra Micro hardness 値. As shown in Figures 8 and 9, the microstructure photographs of the copper coating after holding at different annealing temperatures for one hour. After annealing at low temperature (· 200 °°, the microstructure of the pure, μ copper coating is not too large. However, the tungsten-containing copper coating has produced tungsten-rich precipitates, but the substrate is much smaller than the pure copper coating. At 530 ° C (~ 0.6Tm), the grains in the copper coating begin to grow and grow. (Coalescence), and the tungsten-rich precipitates are gradually increasing:%, but the copper-coated paper with tungsten contains the standard of China National Standard (CNS) A4 (210X297 mm) 6 (Please read the precautions on the back before filling in this page)
574431 A7 ____B7 _ 五、發明説明（6 ) 層仍具有較細化的微觀組織。在800°C(0.8Tm)退火後，雖 銅鍍層晶粒已成長，原先柱狀結構消失，但相較於純銅之 晶粒’含鶴之銅鑛層底材晶粒仍較小’但是虽鎮的析出物 已變的非常大(如圖九所示）。含鎢之銅鍍層超微硬度量測 5. 結果，如圖十所示，即使是在高溫退火(8〇〇°C，lhr)處理 後，所得之超微硬度値仍高於純銅鍍層(達〜2·3倍），而未 退火前或低溫退火後，超微硬度値則約爲3·5倍，顯見含 鎢之銅鍍層具有高溫穩定性。含鎢之銅鍍層的電阻係數量 測結果如圖十一所示，添加少量之鎢(<2·3%)，因有改善 10. *鍍層微觀組質之故，而使電阻係數値略降低，再經不同溫 度退火後，含鎢量低的鍍層均有較接近純銅塊材的電阻係 數値；且·隨著退火溫度的增加，電阻係數値下降的愈明 顯，進一步顯示出適量鎢含量之鍍層，可同時具有高溫穩 定性及較低的電阻係數値(或較高之導電性）。 15. 據此，本創作含鎢之銅鍍層擁有下列獨創性： (1) 本創作的濺鍍法製程潔淨，銅與鎢靶材以疊層共同濺 鍍的方式簡易，容易控制鍍層中之含鎢量； (2) 因銅與鎢不互溶，含鎢之銅鍍層的超微硬度値有高溫 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 20. 穩定性 (3) 因爲鎢含量的增加，銅鍍層的微觀組織獲得改善，而 μ 具有較低的電阻係數値，是良好的導電鍍層，適用於 半導體產業，進而可取代目前導電性較差的鋁導電層。 綜上所陳，本創作所揭露之技術及含鎢之銅鍍層的合 金組成與性質實前所未見，確具新穎首創之要件’且在產 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）7 574431 • A7 B7 五、發明説明（7 ) 業上的利用更具有高度之價値性，理已充分符合專利之規 定’爰依法提出專利申請。 雖然本創作是以較佳實施例之製程及合金組成來揭露含鎢之 銅鍍層的優異性質，然其並非用以限定本創作，因此任何熟習此 5· 項技藝，可根據本創作之技術思想做些許更動與潤飾，來 達到等效的目的。因此，本創作之保護範圍應包含本創作 濺鍍技術之原則而達到具高溫穩定性且有良好導電性及 硬度性質之含鎢的銅鍍層。 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本纸張尺度適用中國國家標準（（：阳）八4規格（210/297公釐）8 574431— —574431 A7 ____B7 _ 5. Description of the invention (6) The layer still has a finer microstructure. After annealing at 800 ° C (0.8Tm), although the grains of the copper plating have grown and the original columnar structure has disappeared, compared to the grains of pure copper, 'the grains of the substrate of the copper-bearing copper ore layer are still smaller' than The precipitate in the town has become very large (as shown in Figure 9). Ultrahardness measurement of copper coatings containing tungsten 5. As shown in Figure 10, even after high temperature annealing (800 ° C, lhr), the ultrahardness 値 obtained is still higher than that of pure copper coatings (up to ~ 2 · 3 times), and before or after low temperature annealing, the ultra-fine hardness 値 is about 3 · 5 times. It is obvious that the copper coating containing tungsten has high temperature stability. The measurement result of the resistivity of the copper plating layer containing tungsten is shown in Fig. 11. Adding a small amount of tungsten (< 2 · 3%) improves the resistivity due to the microstructure of the coating. 10. Lowered, and then annealed at different temperatures, the coatings with low tungsten content have a resistivity 接近 closer to that of pure copper; The coating can have both high temperature stability and low resistivity 値 (or higher conductivity). 15. Based on this, the copper plating of tungsten containing this creation has the following originality: (1) The sputtering process of this creation is clean, and the copper and tungsten targets are stacked and sputtered together, which is easy to control the content of the plating. The amount of tungsten; (2) Because copper and tungsten are not mutually soluble, the ultra-hardness of the copper coating containing tungsten is printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of High Temperature (please read the precautions on the back before filling this page) 20. Stability (3) As the tungsten content increases, the microstructure of the copper plating layer is improved, and μ has a lower resistivity 値, which is a good conductive coating, suitable for the semiconductor industry, and can replace the current poorly conductive aluminum conductive Floor. To sum up, the technology and alloy composition and properties of the copper coatings containing tungsten as disclosed in this creation have never been seen before, and they have new and original requirements', and the Chinese paper standard (CNS) Α4 specification is applicable in the paper size of this production. (210 × 297 mm) 7 574431 • A7 B7 V. Description of the invention (7) The industrial use is more highly valued, and it is reasonably sufficient to meet the requirements of patents. Although this creation uses the process and alloy composition of the preferred embodiments to expose the excellent properties of copper coatings containing tungsten, it is not intended to limit this creation. Therefore, anyone familiar with these 5 skills can follow the technical ideas of this creation. Make a few changes and retouches to achieve equivalent goals. Therefore, the scope of protection of this work should include the principles of the sputtering technology of this work to achieve a high temperature stability, good conductivity and hardness of tungsten-containing copper coatings. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs This paper size applies to Chinese National Standard ((: Yang) 8 4 Specification (210/297 mm) 8 574431— —
|公告本 I D9 圖式 表一 鎢靶材的面積百分比 (tungsten area fraction, %) 銅鍍層中的含鎢量 (atomic percent, at.%) 0 . 0 4.0 0.6 +/- 0.33 _^_ 2.3 +/- 0.03 29.3 5.3+/-0.29 49.9 1 11.1 +/- 0.77 (請先閲讀背面之注意事項再行繪製) -柒. 經濟部中央標準局員工消費合作社印製 參數項目 參數 濺鍍系統基本真空壓力 (System base pressure) 3xl(T7torr 以下 氬氣工作壓力 (argon working pressure) lxl〇-2-lxlO_3torr 濺鍍高週波能量(RF power) 100W 基材溫度 常溫(不加熱）至100°C 靶材 無氧純銅(99.9%)/ 鎢(99.95%) 靶材與基材相對位置及距離 基材位於靶材正上方相距12公分 銅鍍層厚度 0.1 〜ΙΟμιη 11 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）10| Announcement I D9 Schematic Table 1 Tungsten area fraction (%) of tungsten target (atomic percent, at.%) In copper coating 0. 0 4.0 0.6 +/- 0.33 _ ^ _ 2.3 +/- 0.03 29.3 5.3 +/- 0.29 49.9 1 11.1 +/- 0.77 (please read the precautions on the back before drawing)-柒. Basic parameters of the sputtering system for printing parameters by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs System base pressure 3xl (argon working pressure below T7torr) lxl〇-2-lxlO_3torr Sputtering high cycle energy (RF power) 100W Substrate temperature Normal temperature (without heating) to 100 ° C Target no Oxygen pure copper (99.9%) / tungsten (99.95%) The relative position and distance between the target and the substrate The substrate is located directly above the target and is 12 cm apart. The thickness of the copper coating is 0.1 to 10 μm. 11 This paper is in accordance with China National Standard (CNS) A4 specifications. (210X297 mm) 10