TW589695B - Method for measuring the zero tilt angle of the wafer - Google Patents

Abstract

The invention is proposed to solve the drew backs that the zero till angle of the wafer only could be checked in the assembling and identifying processes but could not be checked in the routine maintaining process. The invention uses the recipe of zero tilt angle during the assembling and identifying process as a monitor recipe, and uses the monitor recipe to implant the wafer which is about zero tilt angle. Finally, by analysising both thermowave and resistance of these wafers, the wafer with the largest standard deviation is viewed as the wafer with the zero tilt angle.

Description

589695

[Field of the Invention] The present invention relates to the method of measuring the zero tilt of a wafer. It relates to a method that can be applied to the routine calibration two-dimensional method, and whether a special circle has a zero tilt angle. " The background of the confirmation crystal in the invention is, for example, that the crystals to be tested or inspected will be calibrated to different degrees, and the installation process will inevitably be shifted to see the semiconductor manufacturing. The procedure is to sequentially perform an etching, deposition and pattern transfer on the wafer. For example, the sudden position of v, xi, if the actual position of Ri Rigu makes the results of these steps different from the expected angle. Therefore, the actual position of the wafer and the actual angle I are always the same. To = Normal practice, only in the second sequence of the installation procedure of any machine, the measurement formula of the tilt angle of the wafer is made to confirm whether the tilt angle 依 placed according to the regulations is zero. Here, the majority of the wafers are placed, tilted (an angle that can be visually estimated to be about zero), and then the recipe program (recipe) performs the doping process. Finally, the doping results of the wafers are used to determine which wafer is the best. Approaching a zero tilt angle makes the wafer tilt angle to be a zero tilt angle. = This operation has a potential problem: between one inspection procedure (or) and the next inspection procedure, i may be due to a collision, etc., so that the tilt angle of the wafer placed according to the correction result no longer becomes zero. slope. At this time, if the amount of change is large enough to the naked eye, the operator can suspend the use of the machine and prepare for the inspection

5. Description of the invention (2) Procedures to eliminate deviations. However, if the high precision of the semiconductor product conductor products formed on the wafer is changed, the problem cannot be found when J ^ = can be found in real time: due to J in the installation process or inspection process, many wafers must be consumed With time in routine calibration maintenance procedures. Therefore, to solve the problems that cannot be easily judged in the conventional technology. The amount is so small that it cannot be seen by the naked eye but has a negligible effect (considering that it may happen). The conventional technology must wait until the final wafer tilt angle measurement is completed through a complicated tracking process for semiconductor production. It is not suitable for the application. It is necessary to develop a new method. The method of determining whether the tilt angle of the broken wafer is zero angle. Confirmation in another main sequence. Another main step is to add a new work site to determine the wafer. The main purpose of the wafer surface is to propose that the purpose of simply confirming whether the purpose of the wafer is to increase the amount of the front tilt angle is to monitor the degree of change of the wafer with zero. [The invention is issued at zero tilt and is being repaired. The process of this process or obviously can not be simple. The formula and the summary of the tilt doping procedure show that it can be zero tilt without substantial modification. If it is zero, the doping value and wafer are performed in the crystal equation.

Wafer position is routinely calibrated. In the conventional technology, the analysis of the monitoring equation with zero time is zero. Most of the time, the value is 589695-丨 丨 I 丨 丨 5. Invention description (3) The value is the largest (and often must reach a certain wafer, that is, It can be regarded as the doping procedure of zero tilt angle). Here, the largest deviation value is ^ = structure is crystalline structure. Therefore, the reason for zero tilt angle is the wafer's advancing direction. The majority of the ground just entered the wafer shows that the wafer is measured by light reflection = value (, T_, TW) and the chip resistance of the wafer = the wafer tilt angle changes significantly and it is easy to measure. Obviously, this The invention is based on the existing installed data of the conventional technology, and it is not necessary to significantly change the conventional technology. Since the tilt angle is so large that it can be easily found by the naked eye, it can be used by the inspection program. In most cases where the present invention will be used, the tilt angle of the wafer cannot be easily detected by the naked eye. Therefore, the formula program that can be transmitted to the machine with zero inclination angle is used as the monitoring method of the present invention. The formula =% will not only cause wrong side effects, but also simplify the problem solving process. ,. Further, by applying the monitoring formula program, the present invention only needs to perform the doping process at different angles when determining the zero tilt angle of the wafer, ^ = does not significantly increase the new workload, and can be compared with the conventional technology The wafer j is oblique angle test requires fewer steps. Said

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[Detailed description of the invention] According to the above discussion, the method of zero tilt angle of the wafer is 3C ^. & Sect .: The example is a step of a kind of measurement: ° Does n’t include at least the following circle A calamity μ a * η 士 # 给 + ~ '70 wind < zero tilt angle in acceptance test Ν · The formula formula is the monitoring formula equation Flying armor as shown in test block 12, using the monitoring formula = > II _ program. In this case, the doping procedures are all doped :: xi: doped: about zero inclination angle, and different doping: = oblique angle angle (but corresponding to the same monitoring formula). μ to different tilt Generally speaking, any doping process is doped into the wafer mostly perpendicular to the surface. The big 4 and wafer are shown in the measurement analysis block 1 3, and the measured results are obviously zero with the inclination angle of the wafer in each doping sequence. Here, usually, the doped and doped wafers are measured. impedance. As a result of measuring these doping procedures, the T procedure is not a special doping range angle. The value of the degree of surface change through the wafer is one of the largest standard deviation of the value of the measured wafer. In the doping procedure, the angle is based on the degree of surface change. When measuring the impedance of the wafer, the tilt angle of the wafer is zero tilt, and the tilt angle of the wafer is zero tilt: the maximum standard deviation is pushed further. To avoid the doping process, the round tilt angle Too much, and happened in a bunch of no :: Yue 3 has deviated from zero tilt error. This embodiment can also be used at the moment-find the surface change corresponding to the heart-miscellaneous program with zero tilt angle.

589695 V. Description of the invention (5) When the standard deviation of the degree of value (or impedance) is less than a predetermined value, the tilt angle of the wafer corresponding to any doping procedure is not required to be a zero tilt angle. Generally, the predetermined value is about 6%, but basically only between 3% and 9% is required. Please refer to the experimental data shown in Figures 2A and 2B. 'In this set of experimental data, {the measured wafer tilt angles are -5 ... 3-1, 0 Ί, 3 and 5 degrees, respectively, TW and RS The standard deviation and the average value of the two. According to the above discussion, another-preferred embodiment of the present invention is a method for quickly correcting the tilt angle of a wafer on-line. For example, the third step includes the following steps: As shown in the background box 31, perform an acceptance test (Α__ ^ zero tilt angle of the two wafers' and use the formula weight at the wafer zero tilt angle as the monitoring formula. As an example As shown in the row zeroing box 3 2, in the sequence of 4 yry L, γ, 丨, 丨, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, ，, 古, 古, 古, 古, 古, 古, 古, and 测 are used in the routine calibration and maintenance process of the production line. In the dagger, as shown in Fig. 3B, the wafer tilt includes the following procedures: The 0a u tilt angle zeroing procedure is at least as shown in the multiple measurement block 33, and the gA and ai_ doping procedures are used. The monitoring recipe program is used for several times as shown in analysis box 34. The measurement results are obviously different from the results of a special miscellaneous procedure, and the tilt angle is zero. Obviously, this preferred embodiment is particularly focused on emphasizing

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After the acceptance test when the machine is repaired, the routine calibration and maintenance procedure of the production line is in how to apply the acceptance test, ,,, σ. Obviously, the examples. Therefore, the embodiments are the same. A better and a better wafer tilt angle zeroing procedure is basically the previous one, and the details of the wafer tilt angle zeroing procedure are not the same as the previous ones. The above description is only the scope of the present invention for the patent application of the invention; equivalent changes or patent scope made in the spirit. It is only a preferred embodiment, and is not intended to be used. All other modifications that do not depart from the present disclosure ^ should be included in the following f%

Page 10 589695 Brief Description of Drawings [Simplified Description of Drawings] Figure 1 is a preferred embodiment of the present invention. Figures 2 A and 2B are group diagrams; and Figures 3 A and 3B are the present invention. Representative symbols of the main part 11 Reference block 12 Test block 13 Measurement analysis block 31 Background block 32 Routine zeroing block 33 Multiple measurement block 34 Analysis block

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Claims (1)

Patent application: A method for measuring the zero tilt angle of a wafer, including: Matching: = one of the wafer's zero tilt angles in the degree test is not a Ma Yi monitoring formula; using this monitoring formula, the hybrid procedures are all Let be #, miscellaneous and order, here any-zero tilt :; 疋 = doped--wafer-tilt angle approximately tilt angle; and the doping procedure corresponding to the different doping of these doping Borrowing $ π $, these doping procedures are not ;;;;; the measurement results are significantly different from the tilt angle of it-zero tilt; in this special doping procedure-the i-method of the patent scope of the patent application, Any change to her product such as the zero-angle tilt angle of the Japanese Yen < < 忒 > doped sequence will dope the majority of the ion planes into the wafer. H0 Table 4 The method of measuring the zero inclination angle of the wafer in item 1 such as the value of the degree of change in the surface of the wafer by applying 1f. Method I ^ The square of the zero tilt angle of the wafer measured in the third yoke circle is the largest in the standard deviation of the surface variation value. The tilt angle of the wafer is-zero tilt angle. ^ Sequence t :: !! The square of the zero tilt angle of the wafer measured in item 3 / T The surface change degree value corresponding to this doping procedure is standard 6 The angle of the white needle is not one of the required zero tilts angle. The method for measuring the zero tilt angle of the wafer in item 5 of the application, the predetermined value is about 6%. Page 12 6. Scope of patent application 8 7. The method of measuring the zero tilt angle of the wafer as described in item 1 of the scope of patent application 'is to measure the impedance of the doped wafer. For example, the method of measuring the zero tilt angle of the wafer in item 1 of the f patent range 2 :: one of the maximum resistance to standard deviation The tilt angle of the wafer in the doping process is a zero tilt angle. The formula for measuring the zero tilt angle of the wafer at 9 m :: 7 is determined as follows: The impedance standard deviations corresponding to the two procedures are all smaller than-not equal to + i. The wafer tilt angles corresponding to the doping procedure are not equal. One of the required zero tilt angles. 11 0 · If the patent application scope is 9th, the first, the m method, the predetermined value is about Π =: 0 of the zero tilt angle of 11. 11. = production, rapid correction of wafer tilt angle Order an acceptance test to correct the wafer ^ y 3 3 · Production date h Γ zero inclination angle with zero wafer inclination angle, and: and J oblique angle day generation-distribution equation u-an example of the monitoring formula program in the production line Perform the calibration and maintenance procedure, P equation to perform a wafer tilt = monitoring zero reset procedure includes: T 7 crazy sequence, the wafer tilt angle is used for multiple doping with the monitoring recipe program, the results of these chirp procedures are measured, and 2 and one of the inclination angles is special. The inclination angle of the wafer in this doping procedure = fruit = significant difference. 12. Please apply the method of 4 ”oblique angle on the production line of the item 11 in the patent scope. The doping procedures are all ^ = positive wafer whitening, one of which is doped 589695 6. Scope of patent application A tilt angle of a circle is about zero tilt angle, and different doping procedures correspond to different tilt angles. · 1 3 · If the method for quickly correcting the tilt angle of a wafer on the production line of the 11th patent application range, any of the doping procedures is doping a majority of ions to the wafer in a direction approximately perpendicular to the surface of the wafer in. 14. The method for quickly correcting the tilting angle of a wafer on the production line in accordance with item (i) of the scope of patent application, is to measure the surface change value of the doped wafer. 1 5 · If the doping process of the oblique angle is applied 16 · If the degree value of the oblique angle is applied for the corresponding crystal 1 7 · If the oblique angle is 1 8 · If the oblique angle 1 9 is applied Apply for the wafer with a special oblique angle20. If you apply the method with the favorable range of the oblique angle, the method of the crystal range in the sequence, when the standard deviation is a small circle, the method of the lean range, the method with the profit range , Is the method of the range of interest, and the method of the range of the tilt angle. When the accuracy of the tilt is corrected, the doped zero tilt speed is corrected to the percent speed correction impedance. Speed correction-The impedance of the doped speed correction crystal should be tilted on the surface of the circle. Any of the 4 items should not be predicted. 1 4 items are predetermined values. 1 1 item is measured by 1 8 items and the resistance is 1 8. The production doping range of any one of the production variation ranges is set at a fixed value of the production doping range. The required production is about 100% of the production change. The production standard deviation is zero. The slope of the production doping range is marked as zero. For online fast sequence, any one of three online fast wafers has the largest online fast angle. The on-line fast sequence tilts the wafer by one degree. -Wafer tilt angle. Wafer tilted nine. Wafer tilting wafer tilting procedure Page 14 589695 6. Scope of patent application When the difference is less than a predetermined value, the wafer tilt angle corresponding to any of the doping procedures is not a required zero tilt angle. 2I If the method for quickly correcting the tilt angle of a wafer on a production line in the 18th scope of the patent application, the predetermined value is about 3% to 9%. Page 15