TW589695B - Method for measuring the zero tilt angle of the wafer - Google Patents
Method for measuring the zero tilt angle of the wafer Download PDFInfo
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- TW589695B TW589695B TW91136202A TW91136202A TW589695B TW 589695 B TW589695 B TW 589695B TW 91136202 A TW91136202 A TW 91136202A TW 91136202 A TW91136202 A TW 91136202A TW 589695 B TW589695 B TW 589695B
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589695589695
【發明領域】 本發明係有關於測量晶圓之零傾斜 是有關於可以應用在日常例行性校正維二法,特別 圓是否為零傾斜角度的方法。 " 中之確認晶 發明背景 由 ’例如 與預定 ,都會 校準待 要的問 習 或驗機 置之晶 在不同 以不同 析各個 度,並 但 裝機程 難免的 偏移而 以看出 於半導體製造程序是對晶圓依序進行一 蝕刻、沉積與圖案轉移等等。如 =的v驟 夕你恶如果日日固的實際位置 使得這些步驟之結果與預期角度不同 识μ、、、口禾不冋。因此,如 ?理之晶圓的實際位置與實際角I,始終是一 題。 至 = 一般的作法,只有在任一臺機器的裝機程序 二序中,才作晶圓傾斜角度的測言式,確認依規定放 的傾斜角度疋否為零。在此,係將多數個晶片放 、倾斜角度(可以目視估計大約為零的角度),然後 =配方程式(recipe)進行摻雜程序,最後再透過分 晶片之摻雜結果,來判斷那個晶片最逼近零傾斜角 以此晶片之傾斜角度為零傾斜角度。 =此作’有一個潛在的問題:在一次驗機程序(或 )與下一次驗機程序之間,i可能因為碰撞等等 緣故’使得依校正結果放置之晶片的傾斜角度發生 不再為零傾斜角度。此時,如果變化量大到肉眼可 ’操作人員可以暫停此機器的使用並準備進行驗機[Field of the Invention] The present invention relates to the method of measuring the zero tilt of a wafer. It relates to a method that can be applied to the routine calibration two-dimensional method, and whether a special circle has a zero tilt angle. " The background of the confirmation crystal in the invention is, for example, that the crystals to be tested or inspected will be calibrated to different degrees, and the installation process will inevitably be shifted to see the semiconductor manufacturing. The procedure is to sequentially perform an etching, deposition and pattern transfer on the wafer. For example, the sudden position of v, xi, if the actual position of Ri Rigu makes the results of these steps different from the expected angle. Therefore, the actual position of the wafer and the actual angle I are always the same. To = Normal practice, only in the second sequence of the installation procedure of any machine, the measurement formula of the tilt angle of the wafer is made to confirm whether the tilt angle 依 placed according to the regulations is zero. Here, the majority of the wafers are placed, tilted (an angle that can be visually estimated to be about zero), and then the recipe program (recipe) performs the doping process. Finally, the doping results of the wafers are used to determine which wafer is the best. Approaching a zero tilt angle makes the wafer tilt angle to be a zero tilt angle. = This operation has a potential problem: between one inspection procedure (or) and the next inspection procedure, i may be due to a collision, etc., so that the tilt angle of the wafer placed according to the correction result no longer becomes zero. slope. At this time, if the amount of change is large enough to the naked eye, the operator can suspend the use of the machine and prepare for the inspection
五、發明說明(2) 程序等以消除偏差。但如果變化 形成於晶圓上之半導體產品 導體產品的高精密性,了 便無法有效地即時發現J ^ =時才能發現有問題,: 由於裝機程序或驗機程序中 J,必須耗費許多的晶片與時間 在例行的校正維修程序中。因此 來解決習知技術中無法簡單地判 的缺失。 量小到肉眼看不出來但對 不可忽略的影響(考慮半 可能發生的),習知技術 必須等到最後對半導體產 透過繁雜的追縱驗謹過程 所進行之晶圓傾斜角度測 才成完成’並不適合應用 有必要發展新的方法, 斷晶圓傾斜角度是否為零 角度的方法 明另一主要 序中之確認 明又一主要 增加新的工 地判斷晶圓 明利用已有 配方程式作 角度大致為 之晶圓表面 主要目的是提出可以簡單地確認 目的是提 晶圓是否 目的是在 作量的前 傾斜角度 之裝機驗 為監測配 零之晶圓 變化程度 【發明目 本發 於零傾斜 本發 正維修程 本發 程或明顯 無法簡單 本發 所得到的 式對傾斜 摻雜程序 的及概述 明 出可以應 為零傾斜 不大幅改 提下,有 是否為零 機時在晶 方程式, 進行摻雜 值與晶圓5. Description of the invention (2) Procedures to eliminate deviations. However, if the high precision of the semiconductor product conductor products formed on the wafer is changed, the problem cannot be found when J ^ = can be found in real time: due to J in the installation process or inspection process, many wafers must be consumed With time in routine calibration maintenance procedures. Therefore, to solve the problems that cannot be easily judged in the conventional technology. The amount is so small that it cannot be seen by the naked eye but has a negligible effect (considering that it may happen). The conventional technology must wait until the final wafer tilt angle measurement is completed through a complicated tracking process for semiconductor production. It is not suitable for the application. It is necessary to develop a new method. The method of determining whether the tilt angle of the broken wafer is zero angle. Confirmation in another main sequence. Another main step is to add a new work site to determine the wafer. The main purpose of the wafer surface is to propose that the purpose of simply confirming whether the purpose of the wafer is to increase the amount of the front tilt angle is to monitor the degree of change of the wafer with zero. [The invention is issued at zero tilt and is being repaired. The process of this process or obviously can not be simple. The formula and the summary of the tilt doping procedure show that it can be zero tilt without substantial modification. If it is zero, the doping value and wafer are performed in the crystal equation.
晶圓是否位 常例行性校 方法。 技術已有流 習知技術中 〇 角度為零時 監測配方程 分析多數次 其中,值至 589695 -丨丨 I 丨丨 晒 五、發明說明(3) 值最大(且往往必須達到一定 之晶圓即可視為零傾斜角度之曰值)之摻雜程序所對應到 在此,以偏差值最大者為^ = 結構為結晶結構,因此在零傾斜角的理由是晶圓的 離子的行進方❺,明顯地剛好入晶圓之多數 示’利用光反射測量晶圓被離= 值(,T_、TW)以及晶片阻心 二ς =者晶圓傾斜角度變化有明顯變化而又容易測量的 顯然地,本發明係應用習知技術已有之裝機驗掬蚌& :的資料數據,因此不須大幅改變習知技術已 =,由於若傾斜角度大到肉眼即可輕易發現,便可以 ^驗機程序使用;會使用本發明之場合多是晶圓傾斜角 到無法以肉眼輕易發現的情形。因此直接以裝機驗機 可传到零傾斜角度枯之配方程式作為本發明所使用之監測 =方%式,不只不會引發錯誤的副作用,還可以簡化解決 問題的過程。 、 。 進一步地,本發明藉由應用監測配方程式,在確句晶 圓之零傾斜角度時只需要以不同角度進行摻雜程序,^ = 不會明顯地增加新的工作量,還可以較習知技術之晶圓j頃 斜角度測試需要較少的步驟。 曰曰 、Wafer position is routinely calibrated. In the conventional technology, the analysis of the monitoring equation with zero time is zero. Most of the time, the value is 589695-丨 丨 I 丨 丨 5. Invention description (3) The value is the largest (and often must reach a certain wafer, that is, It can be regarded as the doping procedure of zero tilt angle). Here, the largest deviation value is ^ = structure is crystalline structure. Therefore, the reason for zero tilt angle is the wafer's advancing direction. The majority of the ground just entered the wafer shows that the wafer is measured by light reflection = value (, T_, TW) and the chip resistance of the wafer = the wafer tilt angle changes significantly and it is easy to measure. Obviously, this The invention is based on the existing installed data of the conventional technology, and it is not necessary to significantly change the conventional technology. Since the tilt angle is so large that it can be easily found by the naked eye, it can be used by the inspection program. In most cases where the present invention will be used, the tilt angle of the wafer cannot be easily detected by the naked eye. Therefore, the formula program that can be transmitted to the machine with zero inclination angle is used as the monitoring method of the present invention. The formula =% will not only cause wrong side effects, but also simplify the problem solving process. ,. Further, by applying the monitoring formula program, the present invention only needs to perform the doping process at different angles when determining the zero tilt angle of the wafer, ^ = does not significantly increase the new workload, and can be compared with the conventional technology The wafer j is oblique angle test requires fewer steps. Said
第7頁 589695Page 7 589695
【發明詳細說明】 根據上面的討論 十 我 千3C ^ 、 晶圓之零傾斜角度的方法。&第::貫施例為-種測量 的步驟: ° 不’至少包含下列 曰曰圓 Α灾倆μ a * η 士#給+〜' 70风 < 接受度測試中 為零傾斜角度Ν·之配方程式為監測配方程 飞甲 如測試方塊12所示,使用監測配方= > 二_ 程序。在此任-摻雜程序皆是讓被摻::夕:摻雜 :約為零傾斜角度,並且不同摻雜 :=斜角度 角度(但對應到相同之監測配方程式)。μ到不同之傾斜 一般來說,任一摻雜程序係將多數離 表面垂直的方向摻雜至晶圓中。 大4與晶圓 如測量分析方塊1 3所示, 並以測量結果明顯與其它各摻 序中晶圓之傾斜角度為零傾斜 在此,通常是測量被摻雜 及被摻雜過晶圓的阻抗。 測量這些摻雜程序之結果, Τ程序不-特殊摻雜程 角度。 過晶圓的表面變化程度值以 富測量晶圓的 值標準差最大之一摻雜程序中^曰=,係以表面變化程度 角度。而當測量晶圓的阻抗時,:員之傾斜角度為零傾斜 雜程序中,晶圓之傾斜角度為零傾:標準差最大之推 進一步地,為避免各次摻雜程序中:圓 斜角度過多,而發生在一堆不::曰曰3都已偏差零傾 錯誤。本實施例還可以在當任— 找哥零傾斜角度的 心雜程序所對應之表面變[Detailed description of the invention] According to the above discussion, the method of zero tilt angle of the wafer is 3C ^. & Sect .: The example is a step of a kind of measurement: ° Does n’t include at least the following circle A calamity μ a * η 士 # 给 + ~ '70 wind < zero tilt angle in acceptance test Ν · The formula formula is the monitoring formula equation Flying armor as shown in test block 12, using the monitoring formula = > II _ program. In this case, the doping procedures are all doped :: xi: doped: about zero inclination angle, and different doping: = oblique angle angle (but corresponding to the same monitoring formula). μ to different tilt Generally speaking, any doping process is doped into the wafer mostly perpendicular to the surface. The big 4 and wafer are shown in the measurement analysis block 1 3, and the measured results are obviously zero with the inclination angle of the wafer in each doping sequence. Here, usually, the doped and doped wafers are measured. impedance. As a result of measuring these doping procedures, the T procedure is not a special doping range angle. The value of the degree of surface change through the wafer is one of the largest standard deviation of the value of the measured wafer. In the doping procedure, the angle is based on the degree of surface change. When measuring the impedance of the wafer, the tilt angle of the wafer is zero tilt, and the tilt angle of the wafer is zero tilt: the maximum standard deviation is pushed further. To avoid the doping process, the round tilt angle Too much, and happened in a bunch of no :: Yue 3 has deviated from zero tilt error. This embodiment can also be used at the moment-find the surface change corresponding to the heart-miscellaneous program with zero tilt angle.
589695 五、發明說明(5) 化程度值(或阻抗)的標準差皆小於一預定值時,便不以任 一摻雜程序所對應之晶圓傾斜角度為所需要之一零傾斜角 度。 一般而1,這個預定值大約為百分之六,但基本上只 要在百分之三到百分之九間即可。請參閱第2 A圖與第2 B 圖所示之實驗數據’在這組實驗數據中,{分別測量晶圓 傾斜角度為一5…3 一1、0 Ί、3與5度時TW與RS二者之標 準差(standard deviation)與平均值(心犯 Value)。 根據上面的討論,本發明另—較佳實施例為一種 線上快速校正晶圓傾斜角度的方法。如第3 少包含下列步驟: 如背景方塊31所示,執行接受度測試(Α__ ^二二晶圓之零傾斜角度’並以晶圓零傾斜角度時 之配方权式為監測配方程式。 如例行歸零方塊3 2所示,在4姦括 y r y L 序中,使用γ、目丨丨航古p斗、 在生產線之例行校正維修程 中,用▲測配方私式進行晶圓傾斜角度歸零程序。 在匕,如第3 B圖所示,晶圓傾斜 包含下列程序: 0a u傾斜角度歸零程序至少 如多次測量方塊33所示,傕用gA、ai _ 摻雜程序。 便用監測配方程式進行多次 如分析方塊34所示,測| f此换 測量結果明顯不同之一特殊捧雜雜程序之結果,並以 零傾斜角度。 枱雜私序中晶圓之傾斜角度為 顯然地,本較佳實施例 要特敛是強調了在完成裝589695 V. Description of the invention (5) When the standard deviation of the degree of value (or impedance) is less than a predetermined value, the tilt angle of the wafer corresponding to any doping procedure is not required to be a zero tilt angle. Generally, the predetermined value is about 6%, but basically only between 3% and 9% is required. Please refer to the experimental data shown in Figures 2A and 2B. 'In this set of experimental data, {the measured wafer tilt angles are -5 ... 3-1, 0 Ί, 3 and 5 degrees, respectively, TW and RS The standard deviation and the average value of the two. According to the above discussion, another-preferred embodiment of the present invention is a method for quickly correcting the tilt angle of a wafer on-line. For example, the third step includes the following steps: As shown in the background box 31, perform an acceptance test (Α__ ^ zero tilt angle of the two wafers' and use the formula weight at the wafer zero tilt angle as the monitoring formula. As an example As shown in the row zeroing box 3 2, in the sequence of 4 yry L, γ, 丨, 丨, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, 古, ,, 古, 古, 古, 古, 古, 古, 古, and 测 are used in the routine calibration and maintenance process of the production line. In the dagger, as shown in Fig. 3B, the wafer tilt includes the following procedures: The 0a u tilt angle zeroing procedure is at least as shown in the multiple measurement block 33, and the gA and ai_ doping procedures are used. The monitoring recipe program is used for several times as shown in analysis box 34. The measurement results are obviously different from the results of a special miscellaneous procedure, and the tilt angle is zero. Obviously, this preferred embodiment is particularly focused on emphasizing
第9頁 589695Page 9 589695
機修機時之接受度測試後, 生產線之例行校正維修程序 果在 如何應用接受度測試 , 、、、σ 中。 顯然地, 實施例。因此 實施例相同, 一較佳 一較佳 晶圓傾斜角度歸零程序基本上便是前 ,晶圓傾斜角度歸零程序的細節與前 在此不多重覆。 以上所述僅為本發明之 定本發明之申請專利範圍; 精神下所完成之等效改變或 專利範圍中。 較佳實施例而已,並非用以阳 凡其它未脫離本發明所揭示^ 修飾,均應包含在下述之f %After the acceptance test when the machine is repaired, the routine calibration and maintenance procedure of the production line is in how to apply the acceptance test, ,,, σ. Obviously, the examples. Therefore, the embodiments are the same. A better and a better wafer tilt angle zeroing procedure is basically the previous one, and the details of the wafer tilt angle zeroing procedure are not the same as the previous ones. The above description is only the scope of the present invention for the patent application of the invention; equivalent changes or patent scope made in the spirit. It is only a preferred embodiment, and is not intended to be used. All other modifications that do not depart from the present disclosure ^ should be included in the following f%
第10頁 589695 圖式簡單說明 [ 圖 式簡單說明 ] 第 1 圖係本發明 一 較 佳 實 施 第 2 A圖與 第2B 圖 係 組 可 圖; 以及 第 3 A圖與 〇 第3B 圖 係 本發 明 主 要 部分之代表 符 號 11 引 用 方 塊 12 測 試 方 塊 13 測 量 分 析 方 塊 31 背 景 方 塊 32 例 行 歸 零 方 塊 33 多 次 測 量 方 塊 34 分 析 方 塊Page 10 589695 Brief Description of Drawings [Simplified Description of Drawings] Figure 1 is a preferred embodiment of the present invention. Figures 2 A and 2B are group diagrams; and Figures 3 A and 3B are the present invention. Representative symbols of the main part 11 Reference block 12 Test block 13 Measurement analysis block 31 Background block 32 Routine zeroing block 33 Multiple measurement block 34 Analysis block
第11頁Page 11
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