TW589392B - Ionization film-forming method and apparatus - Google Patents

Abstract

The present invention provides a film forming method comprising the steps of ionizing sputtering particles and applying a periodically changing voltage to an electrode near a substrate, wherein a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage equal to or less than the intermediate value, and a film forming apparatus for carrying out the above method.

Description

2 9 3 9 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ________ B7 V. Description of the Invention (1) Background of the Invention The present invention relates to a film forming method and equipment that can be used to manufacture semiconductor devices such as LLSIs, and A recording medium such as a magneto-optical disc is 'more particularly' related to a method and apparatus for forming a free film, which can use ionized particles to form different types of deposited films. Related Conventional Technology A film formation method is to use wiring and interlayer insulating films' formed on various semiconductor devices or to form magnetic layers and protective layers on a recording medium. These film formation methods', which must show different types of properties, have recently been required to provide an improved cover film having the inside of a groove formed in a substrate, especially the bottom of the groove. Fig. 5 shows a cross section of a film deposited by a conventional sputtering method. The film 102 on the bottom 104 of the groove is much thinner than the film 100 on the top 103 of the substrate 7 outside the groove. This means that this sputtering method provides insufficient coverage. Figure 5 also shows that the film is deposited on the side 101 of the groove. Insufficient coverage and film formation on the groove side adversely affects film formation on the substrate. The magneto-optical disc of the magnetic domain wall displacement type will be described below, which is disclosed in Japanese Patent Laid-Open Publication No. 6-2 9 0 4 9 6. It is formed concentrically on conventional magneto-optical discs and discs, without using recorded information. However, because the information is also recorded on the bottom of the groove with a magnetic domain wall displacement type recording medium, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)-4-(Please read the precautions on the back before (Fill in this page)

589392 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __B7 V. Description of Invention 0) The functional film must be formed on the bottom, as on the flat part of the media outside the groove (hereinafter referred to as the connection area lands lands). Furthermore, this medium must be used so that no magneto-optical signal is generated from the side of the groove, which separates the bottom of the groove and the connection area to prevent interference between the groove and the connection area. In doing so, the amount of film deposited on the side of the groove must be minimized. That is, the recording domain of the magnetic domain wall displacement type requires a film having a high orientation and a high bottom coverage ratio. The bottom coverage ratio is defined as the ratio of the film formation ratio on the bottom surface of the groove to the film formation ratio on the surface outside the groove. The bottom coverage ratio can be obtained by the formula tA / tBx100 (%), where t A is the thickness of the film formed on the bottom surface of the groove and t B is the outer surface of the groove (see Figure 4). The thickness of the film. The conventional film formation method provides a high bottom coverage ratio, including a low-voltage remote sputtering method, a collimated sputtering method, and a high-frequency plasma-assisted sputtering method, which are disclosed in Japanese Patent Laid-Open Publication No. 10 — 2 5 The low pressure remote sputtering method of 9 4 0 0 allows sputtered particles to float in a straight line without scattering, because this method uses a lower pressure and a longer average free path than the general sputtering method. This low-pressure remote sputtering method is also used to provide a longer distance between the target and the substrate and make the particles float in the vertical angle of the substrate. The collimated sputtering method only makes the sputtered particles float in the vertical angle of the substrate to The particles are allowed to reach and be deposited thereon by arranging a cylinder having a plurality of holes made in a vertical angle of the substrate between the target and the substrate. The high-frequency plasma-assisted sputtering method allows floating sputtered particles. By adapting the paper size to the Chinese National Standard (CNS) A4 (210X297 mm) -5-(Please read the precautions on the back before filling this page. )

Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 589392 A7 B7 V. Description of the invention (3) It is ionized and deposited in the space of the plasma. Sputtered particles are in the vertical angle of the substrate and are generated in the vicinity of the substrate. They use a negative voltage (self-bias) on the substrate due to the plasma. However, the low-pressure remote sputtering method is considered to be limited to mass-produced substrates with groove feature ratios as high as about 4 due to its low film formation ratio and low original material (target) efficiency, and Long distance. The collimated sputtering method has problems of a low film formation ratio and a low use efficiency of a raw material. The losses due to the sputtered particles deposited on the collimator are limited to substrates with groove feature ratios as high as about 3. The high-frequency plasma-assisted sputtering method can be used for substrates with a groove characteristic of 4 or higher than the substrate. However, the sputtering method allows charged particles in the plasma to penetrate the substrate, so it is heated because the plasma is Generated by applying a high-frequency voltage to the substrate. Therefore, in the sputtering method, it is difficult to form a film on a substrate made of a material having a low thermal resistance, such as using a base material such as a recording medium, including optical discs and magneto-optical discs. SUMMARY OF THE INVENTION An object of the present invention is to provide a film forming method and a film forming apparatus in order to solve the above problems, which can be used to form a film with a high bottom coverage ratio, even on a substrate having deep grooves on its surface. Another object of the present invention is to provide a film forming method and a film forming apparatus' which can prevent an increase in substrate temperature. Another object of the present invention is to provide a method for forming a free film and the size of the paper. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 6-(Please read the precautions on the back before filling this page)

589392 A7 B7 V. Description of the invention (4) The film forming equipment promotes the excitation and ionization of the discharge gas, thereby increasing the ionization efficiency of the evaporated particles. These objectives are achieved by a method of forming a deposited film by sputtering, which includes the steps of ionizing the sputtered particles and applying a periodically changing voltage to an electrode disposed near the substrate, where a maximum equal to or greater than the above voltage is applied The time of the intermediate 値 voltage between 値 and the minimum 値 is shorter than the time of applying a voltage equal to or less than this intermediate 値. These objectives are also to guide the sputtered particles into the substrate by an ionizing sputtering device for forming a deposited film, using an electric field generated near the substrate. The device includes: a sputtering chamber with an evacuation system; a gas introduction mechanism, It is used to introduce the process gas into the sputtering chamber; the target is arranged in the sputtering chamber; the ionization mechanism is arranged between the target and the substrate; the electrode is arranged near the substrate; Under such conditions in the electrode, the condition is that the time to apply a voltage equal to or greater than the intermediate voltage between the maximum voltage and the minimum voltage is shorter than the time to apply a voltage equal to or less than the intermediate voltage. Detailed description will be given below with reference to examples. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a simple cross-sectional view illustrating the structure of a film forming apparatus according to an embodiment of the present invention; FIG. 2 is a simple cross-sectional view illustrating an embodiment of an ionization mechanism of the present invention; FIG. The waveform of the voltage of the electrode 10 according to the present invention is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 7 _ (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T 589392 A7 B7 V. Description of the invention (5) Figure 4 is a simplified diagram illustrating the method used to calculate the bottom coverage ratio according to the present invention; (Please read the notes on the back first (Fill in this page again) Figure 5 is a simplified diagram of a film deposited by a conventional sputtering method; Figure 6 shows the relationship between the frequency of the voltage applied to the electrode 10 and the bottom coverage ratio in Example 3 of the present invention; FIG. 7 shows the load ratio between the voltage of the applied electrode 10 (the time T 1 when the voltage V 1 is applied and the time T 2 when the voltage V 2 is applied, as shown in FIG. 3) and the bottom coverage ratio in Example 4 of the present invention. Fig. 8 shows the relationship between the load ratio of the voltage applied to the electrode 10 and the strength of the medium in Example 6 of the present invention; Fig. 9 is a simple cross-section illustrating the structure of the free film formation forming apparatus in Example 8 of the present invention Fig. 10 is a simplified diagram of magnetic lines for explaining force. The magnetic line formation is when the magnetic field applying mechanism installed in the free film forming equipment in Example 8 of the present invention is used alone; Cooperative prints 1 1 is the solution A simplified diagram of a magnetic line of force, which is formed by a magnetic field applying mechanism between a target and an ionizing mechanism and by a magnetic field applying mechanism below the target in FIG. 9; FIG. 12 is an example 1 illustrating the present invention 1 is a simple cross-sectional view illustrating the structure of a free film forming apparatus in Example 1 of the present invention; FIG. 13 is a simple cross-sectional view illustrating the structure of a free film forming apparatus in Example 15 of the present invention; Simple cross-sectional view of the structure of the free film forming equipment in 8; This paper size is applicable to Chinese National Standard (CNS) A4 specifications (210 X297 mm) -8-589392 Printed by A7 B7 _____ V. Description of the invention (6) FIG. 15 is a simple cross-sectional view illustrating the structure of the free film forming apparatus in Example 20 of the present invention; FIG. 16 shows the size ratio between the substrate and the electrode 10 and the dimensions of the present invention. The relationship between the bottom coverage ratio in Example 20; Figure 17 shows the relationship between the size ratio between the substrate and the electrode 10 and the bottom coverage ratio in Example 21 of the present invention; Figure 18 is an explanatory text Invention Example 2 2 A simple cross-sectional view of the structure of a free film forming apparatus; Figures 19A and 19B are a top view of the ionization mechanism 6 of the free film forming apparatus and a side view of the apparatus in Example 22 of the present invention, respectively; Top view of a semiconductor substrate. FIG. 20 illustrates the relationship between the film formation time and the substrate temperature, which is established when the isolation plate is configured, the isolation plate is cooled, and no isolation plate is disposed in Example 22 of the present invention; FIG. 2 1 Explain the difference in the bottom coverage ratio, which depends on whether the insulation plate made of glass, Teflon, or Polylon is water-cooled; Figure 2 2 illustrates the free film forming equipment in Example 25 of the present invention A simple cross-sectional view of the structure; FIG. 23 is a cross-sectional view of a substrate having a film formed thereon in Example 25 of the present invention; and FIG. 24 shows a magnetic domain wall displacement type recording using Example 25 of the present invention. Results of media CN ratio measurement; Figure 25 is a simple cross-sectional view illustrating another embodiment of the free film forming equipment in Example 25 of the present invention; and first, please read the notes on the back to fill in this search ), ιτ Line # · This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) -9- 589392 A7 B7 V. Description of the invention (7) Figure 2 6 shows that the magnetic flux density at point A is forming. Dependent pattern of the ratio of the deposited film to the substrate. Main component comparison table 1 Film formation chamber 2 Target 3 Magnet 4 Sputtering power supply 5 Process gas guide mechanism 6 Ionization mechanism 7 Substrate 7 Magnetic field application mechanism 8 Substrate holder 9 Electric field 10 Electric field 11 Voltage application mechanism 11 Function synthesizer 12 Voltage application Institution 12 Power amplifier 13 Shutter 14 Evacuation system 17 Insulator 21 Functional synthesizer 2 2 Power amplifier This paper size applies to China National Standard (CNS) Α4 specification (210X297 mm) _ 101 (Please read the precautions on the back before filling (This page)

、 1T 线 # · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A7 B7 V. Description of the invention (8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 3 Auxiliary electrodes 3 0 Extension 4 8 Magnetic lines 7 0 Magnetic field generators 7 0 a Electromagnet power supply 8 0 Reactive gas conduction 1 0 0 Membrane 1 0 1 Side 1 0 2 Membrane 1 0 3 Top 1 0 4 Bottom 6 〇1 Filament 6 0 2 Mesh grid 6 0 3 Shell 6 0 4 DC power supply 6 〇5 DC power supply 6 0 6 Ionization space 6 0 7 DC power supply 6 〇8 Isolation plate 6 0 9 Thickness of water cooling mechanism (please read the precautions on the back before filling this page) This paper standard is applicable to Chinese national standards ( CNS) A4 specification (210X297 mm) -11-589392 A7 B7 V. Description of the invention (9) Description of preferred embodiments Now referring to the drawings, the present invention will be described in detail below. Figure 1 illustrates an embodiment according to the present invention A simplified diagram of the free film forming equipment. In FIG. 1, reference numeral 10 indicates the electrode on the back side of the substrate, and reference numerals 11 and 12 indicate A voltage applying mechanism for applying a periodically changing voltage to the electrode 10. According to the film forming mechanism of the present invention, the particles evaporated from the target 2 are ionized by the ionization mechanism 6, and the sputtered particles having directional ionization are Incident on the substrate 7, an electric field 9 acts on the substrate 7. The film formation chamber 1 'is a metal container made of stainless steel, aluminum, or the like, which is grounded to a reference potential and is controlled by a gate valve (not shown) ) Keep airtight. The evacuation system 14 is a composite evacuation device, which can be evacuated from the atmospheric pressure to a range of about 10 to 6 Pa. The evacuation speed of this evacuation system can use the evacuation speed g weekly (7JK is not shown) Adjust 'such as a throttle or conductive valve. For this embodiment, target 2 is a 3 mm thick and approximately 3 inch (76 · 2 mm) diameter magnetic sheet that is mounted on a backing plate and insulator In the sputtering chamber, a mechanism may be provided which cools the target with a coolant such as water if necessary. A magnet 3 as a magnetic field production mechanism is installed on the back side of the target 2 so that the magnetron sputtering is performed. Radio power supply 4, its feed The predetermined electric power is applied to the target 2 to cause a glow discharge, and is adopted to apply a negative DC voltage of 2,000V or 600V relative to the reference voltage to the target 2. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297) (Mm) (Please read the precautions on the back before filling out this page), 11 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -12- 589392 A7 B7______ 5. Description of the invention (10) Handling gas guide mechanism 5 Guide splash Radio discharge gas, such as a rare gas. Since this gas is effectively ionized, it is preferable that the processing gas is introduced in the center of the ionization space. A circular tube having a plurality of gas blowouts formed on its central side is more preferably used because the gas is introduced uniformly. Ionization mechanism 6, which is a hot cathode type using Penning ionization, and strikes the hot electrons emitted from the hot cathode against the sputtered particles and the sputtered discharge gas particles in the path of the sputtered particles from the target 2 to the substrate 7, Ionization of sputtered ions, or generation of a sputter discharge gas to stimulate seed crystals and ions. The excited seed crystals and ions of the discharge body also collide with the sputtered particles in the ionized space to ionize the sputtered particles. As mentioned above, the sputtered particles are mainly ionized via these two mechanisms. FIG. 2 shows the structure of the ionization mechanism 6. Specifically, by feeding an electric current from the DC power supply 6 0 4 to the filament 6 0 1 connected in series thereto, the ionizing mechanism 6 heats the filament 6 0 1, thereby causing it to emit thermoelectrons. The grid 602 has a network structure. The DC power supply 6 0 5 applies a positive voltage to it, so that the hot electrons from the filament 6 0 1 are accelerated toward the grid 6 2. The accelerated hot electrons were not immediately captured by the grid 6 2, but traveled through the grid 6 2 of the ionized space 6 0 6 in the path of the sputtered particles. This hot electron and sputtered particles collide with the sputtered discharge gas particles to ionize or excite these particles, and then be captured by the grid 602. Filament 6 0 1 is made of a material with a large coefficient of thermal electron emission, such as Re W or W, and the grid 6 2 2 has a network structure composed of 1 mm diameter wires. Approx. 3 mm apart. For an ionization mechanism, one side of the filament 3 0 1 is at the same potential as the shell 6 0 3. Because this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -13-(Please read the precautions on the back before filling this page) Order printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economy 589392 A7 B7 Description of the invention (11) (Please read the precautions on the back before filling this page) This DC voltage which is a reference voltage can be applied by the DC power supply 6 0 7 in the case 6 0 3 to prevent the electrode from diffusing, or the case 6 0 3 can be held at the reference potential. A base support 8 arranged in the chamber is used so that the support can hold the base 7 parallel to the target 2. The insulator 17 is inserted between the substrate holder 8 and the substrate 7. The electrodes 10 are preferably arranged parallel to the substrate 7. The electrode 10 is connected to a voltage application mechanism composed of a functional synthesizer 11 and a power amplifier 12, and the functional synthesizer 11 is used as a signal generator. This voltage applying mechanism changes the voltage to the electrode 10 periodically. FIG. 3 illustrates a bias voltage applied to the electrode 10. The bias voltage varies between a predetermined period between a maximum voltage V 1 (a voltage having a minimum amplitude for a floating potential) and a minimum voltage V 2 (a voltage having a maximum amplitude for a floating potential). The floating potential is an electrically insulating substrate placed in the plasma under the action of the plasma. In this embodiment, when no voltage is applied to the electrode 10, the floating potential is a potential generated on the substrate 7. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This kind of bias generates an electric field 9 that is substantially perpendicular to the substrate 7 near the substrate 7, so that the ionized sputtering particles are accelerated along the electric field 9 to reach the substrate 7. Since the ionized particles are incident on the substrate 7 in the direction of the electric field 9, it is desirable to make the electric field 9 uniformly formed on the substrate, as far as possible perpendicular to the substrate. Any waveform and voltage can be applied to the electrode 10 from the signal generator 11 and the power amplifier 12. Hereinafter, a method for freely forming a film according to an embodiment of the present invention will be described in detail. After the substrate 7 is mounted on the substrate support 8, the chamber is evacuated to about 10-6 Pa using a composite evacuation system 14. The ionization mechanism 6 was then applied to the Chinese standard (CNS) A4 specification (210X297 mm) _ 14-589392 A7 B7 for the paper size. 5. Description of the invention (12) Operation. That is, first, the DC power supply 6 0 7 is operated and set at one time, and the filament DC power supply 6 0 4 is operated to heat the filament 6 0 1 by supplying energy. Finally, using the grid grid DC power supply 605, a positive DC voltage of about +100 to about +200 V is applied to the grid grid 602 to cause it to emit hot electrons in the ionized space 606. Depending on the ratio formed by sputtering the film, desirably, the 値 of the current (emission current) flowing into the grid 602 is set to 5 A or higher in film formation. Then, a process gas introduction mechanism 5 is used, such as A sputtering gas is introduced, and the evacuation speed adjustment for the composite evacuation system 604 is controlled to keep the chamber 1 at 0.2 to 0.5 Pa. Secondly, by operating the sputtering power supply 4, a sputtering discharge is implemented to start sputtering, and at the same time, by operating the signal generator 11 and the power amplifier 12, a voltage is periodically applied to the electrode 10 to generate a substance The electric field 9 perpendicular to the surface of the substrate 7 For example, a voltage having a rectangular waveform as shown in FIG. 3 is applied to the electrode 10 as described above, so that electrons can be incident near the substrate, and the potential of the rectangular wave floating potential is Maximum voltage VI. In particular, desirably, the maximum voltage V 1 is selected in the range of 0 to 10 V, because the floating potential is often in or near this range. Depending on the sputtering conditions, the floating potential can exceed-0 V. In this case, the maximum voltage V 1 should be selected based on the floating potential. As described above, if a voltage near the substrate 7 is applied, it is not determined based on the maximum voltage V 1 or higher around the floating potential, 'it is applied so that electrons can be incident on the substrate, and the minimum voltage V 2 is applied to Make the size of the positive ion paper applicable to the Chinese National Standard (CNS) A4 specification (2i0x297 mm) -15 · (Please read the precautions on the back before filling out this page), printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A7 ____ _Β7 V. Description of the invention (13) can be incident on the substrate. Furthermore, in order to prevent the film formation ratio from being significantly reduced under the effect of the opposite sputtering, desirably, the minimum voltage V 2 is set to a value of 20 to 1 ΐοον. In order for the ions to be effectively incident on the substrate, when the substrate is prevented from being charged, the frequency is 100 kH Z or higher and its waveform load ratio is set to 1: 50 or higher, that is, the maximum voltage v 1 is applied The ratio of the time to the time when the minimum voltage V 2 is applied is set to 1/50 or less. After pre-sputtering was performed for several minutes, under constant conditions, the base shutter 13 was opened to start film formation. The particles sputtered by the sputtering discharge are ionized in the ionized space 606. Aimed at the substrate 7 and accelerated by the electric field 9 near the substrate 7, the particles are attracted to the substrate 7 and are effectively deposited on the bottom of the groove in the substrate 7. After a film having a predetermined thickness is formed, the shutter 13 is closed, and the signal generator 11, the power amplifier 1, the sputtering power supply 4, and the processing gas introduction mechanism 5 are stopped first, and then, the filament power supply is stopped. 604, the grid power supply 605, and the floating power supply 607 are stopped in the ionization mechanism 6. Finally, the gate valve (not shown) is closed, the sputtering chamber 1 is empty, and the substrate 7 is moved from the substrate holder 8. For the ionization mechanism 6, it is preferable not to deposit sputtered particles on the filament 601. This is because the deposited film on the filament 601 changes its resistance and causes the filament to break easily. To prevent this, the filament power supply 6 0 4 is desirably kept in use while the sputtering power supply 4 is in operation. In this embodiment detailed above, different materials for forming the evaporated film including metals, alloys, and composites can be used. In this example, the paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) ~ Γ ~ 6-(Please read the precautions on the back before filling this page)

589392 A7 ____B7 V. Description of the invention (14) (Please read the precautions on the back before filling this page) Use a mechanism that impacts the hot electrons against the evaporation particles and discharge gas particles to ionize the evaporation particles. The free film formation method according to the present invention 'however, different ionization mechanisms such as laser-assisted ionization and high-frequency coil plasma-assisted ionization can be used, which can ionize evaporated particles between the evaporation source and the substrate, for example, the following The present invention will be explained more specifically. Although the following examples are typical and preferred embodiments of the present invention, these embodiments do not limit the present invention. (Example 1) Following the procedure of the above-mentioned embodiment, a film was formed under the following conditions. Material of target 2: GdFeCr (ternary alloy) Power fed to target 2 · 4 0 0 W Pressure in the sputtering chamber: 0 · 8 P a Discharge gas: argon Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

Discharge gas flow rate: 200 sc cm. Grid voltage of the ionization unit. · 5 0 V. Ionization unit emission current: 20 A. Ionizing unit floating supply voltage:-30 V. Under these conditions, the frequency of the voltage applied to the electrode 10. And the load ratio is set to 500k Η z and 1: 1, the film is continuously formed on the substrate 7 'applied to the electrode 10 with different minimum and maximum voltages V 2 and V 1 to make a sample substrate . When they are made, the hot electrons are measured on the surface of the sample substrate. Figure 1 shows the results. It shows that the appropriate paper size is in accordance with the Chinese National Standard (CNS) A4 (210X297 mm) _ 17-589392 A7 B7 V. Description of the invention (15) The voltage applied to the substrate is significantly reduced and the substrate temperature is increased. (Please read the notes on the back before filling this page.) For example, set V 1 and V 2 respectively to a range of 5 to 110 V and a range of 40 to 1000 V to allow the film to be formed at about 6 In 0 t, this temperature is taken as the temperature of the substrate 7. Herein, it is meant that the film can be smoothly formed on a substrate made of a material having a low thermal resistance, such as polycarbonate. For example, polycarbonate (polycarbonate), polymethyl isobutyl butyrate (polymethlmetahcrylate), and epoxy resin (epoxy resin) are said to have a temperature of 95 to 105 ° C, 1 2 to 1 3 2 respectively. ° C, and heat distortion temperature of about 1 3 5 ° C. This example allows a good film to be formed on a substrate made of such a material having low thermal resistance. In the film formation under the conditions of the present invention, the floating potential is in the range of 0 to 10V as described above. From the results of the present invention, the maximum voltage V 1 is set to a value obtained by subtracting 10 V from the floating potential, thereby obtaining a more appropriate result. (Example 2) According to Example 1 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the film was formed on a Si substrate with a groove having a bottom thickness of 0 · 2 5 // m and an aspect ratio of 4, Under the following conditions. In this example, the sample substrate is made at different maximum and minimum voltages V 1 and V 2. The bottom coverage of these sample substrates was measured. Table 2 shows the results. Used for information. Table 2 also gives the bottom coverage ratios obtained with conventional low-voltage remote sputtering and high-frequency plasma-assisted ionization sputtering equipment. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ -18: 589392 A7 _ B7 V. Description of the invention (16) (Please read the precautions on the back before filling this page) For the example, The conventional low-voltage remote sputtering method provides a bottom coverage ratio of about 16%, but particularly when the maximum voltage V 1 is at −10 volts and the minimum voltage V 2 is at −40 V, the present invention is applied. Provides a bottom coverage of about 40%. In the film formation under the conditions of this example, the floating potential is in the range of 0 to 110V as described above. From the results in this example, the maximum voltage v 1 is set to be minus 1 0 V from the floating potential. And get the 値, to get more appropriate results. (Example 3) According to Example 1, the film was formed on a Si substrate having a groove having a bottom thickness of 0 · 2 5 // m and an aspect ratio of 4, which was applied by applying the maximum voltage V 1 to 1 〇V and the minimum potential V 2 at -20 0V to the electrode 10 and change the frequency of the voltage applied to the electrode 10. The bottom cover ratio of the obtained sample was measured. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 6 shows the results of the measurement, which shows that this example significantly increases the bottom coverage ratio compared to the conventional sputtering method. For example, the conventional low-pressure remote sputtering method provides a bottom coverage ratio of about 16%, but particularly when the frequency of the voltage applied to the electrode 10 is set to 10 OH z or higher, this example provides about 40 % Bottom coverage ratio. In the film formation under the conditions of this example, the floating potential is within the range of 0 to 10V as described above. From the results in this example, the maximum voltage V 1 is obtained by subtracting 10 V from the floating potential. Either way, to get more appropriate results. This paper size is in accordance with Chinese National Standard (0 Milk) 8 (210 \ 297 mm) -19-589392 A7 B7 V. Description of the invention (17) (Example 4) According to Example 1, the film is formed in a groove Si groove on the substrate (please read the precautions on the back before filling this page) It has a bottom thickness of 0 · 2 5 # m and an aspect ratio of 4 to the load ratio of the voltage applied to the electric level 1 0 (the load ratio is applied The ratio of the time T 1 of the maximum voltage V 1 to the time T 2 at which the minimum voltage v 2 is applied) is set at -1 0 V and-40 V with the maximum voltage V 1 and the minimum voltage V 2, respectively. The bottom coverage ratio of the obtained sample was measured. Fig. 7 shows the result of the measurement ', which shows that this example significantly increases the bottom coverage ratio compared to the conventional sputtering method. For example, the conventional low-pressure remote sputtering method provides a bottom coverage ratio of about 16%, but particularly when the load ratio of the voltage applied to the electrode 10 is set to 1/50 or less, that is, T1 / T2 Time. In the film formation under the conditions of this example, the floating potential is in the range of 0 to 10V as described above. From the results in this example, the maximum voltage V1 is set to subtract 1-10V from the floating potential. And get the 値 'to get more appropriate results. (Example 5) According to Example 1 printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, S i02 used for the target 2 and RF power supply as the sputter power supply 4, the S i02 film was formed in a groove On the Si substrate, different maximum and minimum voltages are applied to the electrode 10. By reactive ion etching, several sample Si substrates were set, and the grooves had a bottom width of 0 · 5 // m and an aspect ratio of 4. Furthermore, according to Example 1, GdF e C r used for the target 2 is formed on a Si substrate with a groove, and is applied to the electrode 10 with different maximum and minimum voltages. This paper size is applicable Chinese National Standard (CNS) Α4 Specification (210 X 297 mm) -20-589392 A7 _B7___ V. Description of Invention (18) (Please read the notes on the back before filling this page). The SiO 2 and GdFeCr films are 100 nm and 80 nm thick on the outside of the grooves, respectively. The dielectric strength was measured between the Si substrate and the G d F e C r film formed thereon in the bottom of each sample substrate. (Comparative example) By sputtering, a 20 nm-thick Si02 film and an 80 nm-thick G d F e C r film were formed on the S-substrate connection region. Under the same film formation conditions as in Example 5, except for ionization The mechanism was not operated. The dielectric strength is measured between the Si layer and the GdF e C r layer above it in the bottom of each sample substrate. Table 3 gives the medium intensities of the samples formed in Example 5, and the sample films obtained by the conventional spraying in the comparative examples. In the comparative example, Table 3 shows that the dielectric strength is about 2 V. However, the V of V 1 and V 2 is appropriately selected, which causes the dielectric strength to increase significantly to 1 3 V in Example 5. (Example 6) According to Example 5, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the film was formed on the substrate 7 at different load ratios of the voltage applied to the electrode 10, and was set with the maximum voltage V 1 and the minimum voltage V 2 respectively. At 110V and 40V, the strength of the sample medium was measured. Figure 8 shows the measurement results. For comparison purposes, Figure 8 also shows the dielectric strength of the sample obtained by the conventional sputtering method. Figure 8 shows that Example 6 allows samples with significantly increased dielectric strength exceeding 1 3 V to be configured. By setting the load ratio to 1:50 or higher, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). 11 ~-21-589392 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of Invention (19) (Example 7) According to Example 1 'Si N 3 used for target 2 and as sputtering power supply 4 The RF power supply 'S i N3 film is formed on a si substrate with a groove' This groove has a bottom width of 0.2 5 // m and an aspect ratio of 4, with different maximum and minimum voltages V 1 and V 2 It is applied to the electrode 10. Through the reactive ion etching, several samples S i substrates are set, and the bottom coverage ratio of the obtained samples is measured. Table 4 shows the results. In this example, V 1 was selected appropriately. And V 2 to allow the bottom coverage ratio to be significantly increased, thus providing a sample substrate with a bottom coverage ratio as high as about 33%. (Example 8) Figure 9 is a schematic diagram showing the formation of a free film according to this example. Fig. In this example, the magnetic field generating mechanism 70 is arranged near the ionization space at In the film forming equipment shown in 1. The magnetic field generating mechanism in this example will be described in detail below. This magnetic field generating mechanism 70 is a maggot-shaped electromagnet, which is arranged between the target 2 and the ionization mechanism and is fixed to the mechanism. Medium. The sputtered particles from the target 2 travel through the central hole of the magnetic field generating mechanism 70 to the ionizing space 6 0 6 to be ionized, and are deposited on the substrate 7. It is formed by the magnetic field generating mechanism 70 The magnetic field provides the N pole on the side of the target 2 and the S pole on the side of the ionization mechanism 6. The magnetic field formed near the ionization space 6 06 is shown in Fig. 10 as long as there is no ferromagnetism near the magnetic field generation mechanism. Applicable to Chinese paper standard (CNS) A4 (210x297 mm) -22 for this paper size-(Please read the precautions on the back before filling this page)

589392 A 7 B7 V. Description of the invention) In this example, the magnetic field generating mechanism 70 and the magnetic mechanism 3 for magnetron sputtering interfere with each other, so magnetic field lines 48 are formed, as shown in FIG. 11. This example is used for an electromagnet of a magnetic field generating mechanism 70. However, permanent magnets that generate the same magnetic field as electromagnetic iron can be used instead of magnets. Because the magnetic field lines 48 of the magnetic field generating mechanism 70 guide the hot electrons and the sputtered discharge gas ions into the target 2, and increase the speed of film formation on the substrate 7. The magnetic field lines also remain in the ionization space because the magnetic field increases the ionization efficiency. For example, the use of a plasma ionization mechanism causes the magnetic field lines 48 to condense the plasma near the center of the ionization space, and maintains the plasma in the ionization space at a high density ′ so that the ionization efficiency can be increased. This magnetic field generating mechanism 70 is desirably arranged to contact the lower portion of the ionization mechanism 6 as shown in FIG. 9, or the surface 2 to 8 0 mm of the target 2 between the ionization mechanism 6 and the magnetic field generating mechanism 70 is such that Figure 12 shows. Desirably, a magnetic field is employed such that a magnetic flux density of about 150 to about 300 G is arranged at a distance of about 30 mm from the center of the target toward the base. Referring now to Fig. 9, the method for forming a free film according to this example will be described in detail below. After the substrate 7 is mounted on the substrate holder 8 ', the sputtering chamber is evaporated by about 5 X 1 0-5 P a using a composite evacuation system 14. The magnetic field generating mechanism 70 is then operated to form magnetic lines of force 4 8 'and the ionizing mechanism is also operated. That is, the electromagnet power supply 7 0 a is operated and a magnetic flux density set at 150 to 300 G is arranged in a point A between the target 2 and the ionization mechanism 6. At the same time, the floating DC power supply 6 0 7 is operated and set in a frame. Further, the filament d C power supply 604 is operated to heat the filament 601 by energizing it so that the filament emits hot electrons into the ionization space 606. Then use the process gas guide paper size to apply Chinese National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling out this page) Order-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 589392 A7 B7 V. Invention Description) (Please read the notes on the back before filling out this page) Printed by the consumer co-operative organization of the Intellectual Property Bureau of the Ministry of Economic Affairs5, such as AI * sputtering gas is imported and used in the composite evacuation system The evaporation speed adjustment of 4 is controlled to adjust the pressure of the sputtering chamber 1. Secondly, by operating the sputtering power supply 4, a sputtering discharge is performed to start sputtering. At the same time, by operating the signal generator 11 and the power amplifier 1 2, a voltage is applied to the electrode 10 to generate an electric field 9 near the substrate 7. In this case, as a voltage applied to the electrode 10, for example, a voltage having a rectangular waveform as shown in FIG. 3 is applied to the electrode 10 as described above so that electrons can be incident on the substrate near the floating potential. The maximum voltage V1. In particular, the maximum voltage V 1 should be selected in the range of 0 to 110 V. Depending on the conditions, the floating potential can take a small positive value relative to the ground potential. In this case, V 1 should be set near the floating potential. In order to prevent the film formation speed from being significantly reduced under the effect of the opposite sputtering, desirably, the minimum voltage V2 should be set at a range of 20 to -100V. In order for ions to be incident on the substrate with noise, but to prevent the substrate from charging, it is desirable to make the frequency be 100 kHz or higher and the waveform load ratio to be set to 1:50 or higher, that is, the maximum voltage V 1 is applied for The time for applying the minimum voltage V 2 is set to 1/50 or less. After the pre-sputtering was carried out for several minutes, with the condition unchanged, the base shutter 13 was opened to start film formation. The particles sputtered by the sputtering discharge are ionized in the ionized space 6 0 6, are guided into the substrate and are accelerated by the electric field 9 near the substrate 7, so that the particles are attracted to the substrate 7 substantially perpendicular to the substrate 7. And deposited on the substrate 7. After a film with a predetermined period thickness is formed, the shutter 1 3 is closed, and the signal generator 1 1, the power amplifier 1 2, and the sputtering power supply. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 24 _ 589392 A7 B7 V. Inventive Prostitute) (Please read the precautions on the back before filling this page) 4. And the process gas introduction mechanism 5 is stopped first, and then the filament power supply 6 of the ionization mechanism 6 0 4. Net The grid power supply 605, the floating power supply 607, and the electromagnet power supply 70a are turned off, the sputtering chamber 1 is empty, and the substrate 7 is moved from the substrate support 8. Using the above film forming equipment, the film was formed under the following conditions: Target material: Aluminum Target size: 76 · 2mm diameter, 3mm thickness Feed to target power: 3 0 0 W Distance between target and substrate: 1 5 5 mm substrate: silicon wafer substrate size: 76 · 2mm diameter, film thickness 200mm sputtering chamber pressure: 1 · 0 P a process gas: argon process gas flow rate: 1 4 3 sccm

Ionization mechanism grid voltage: 50 V

Ionization mechanism grid current: 1 5 A

Ionization mechanism floating supply voltage:-40 V AC voltage applied to electrode 10 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: 0 v (maximum),-30 V (minimum) AC frequency applied to electrode 10: 500 kHz The load ratio of the AC voltage applied to the electrode 10: 1: 100. By changing the output from the electromagnet power supply 70a under the above conditions, the magnetic field near the disposition ionization mechanism 6 is changed to form a film. During film formation The Chinese paper standard (CNS) A4 specification (210X 297 mm) -25 589392 A7 ___ B7 is applicable to the paper size. 5. The rate of film formation on the substrate is measured during the period ‘3. Figures 2 to 6 show the results. (Please read the notes on the back before filling this page.) In Figure 26, the horizontal coordinate represents the magnetic flux density of point A between the target 2 and the ionization mechanism 6, and the vertical coordinate represents the film formation rate. As shown in Figure 26, this example allows the magnetic flux density at point A to be set to a predetermined value to increase the film formation rate. For example, when the magnetic flux density at the point A is 150 G, the film formation rate is found to increase by about 50% or more, compared to the case where no magnetic field is generated. (Example 9) In this example, the bottom coverage ratio of the deposited film was measured under the conditions of Example 8. In particular, the magnetic field generated near the ionization mechanism 6 is adopted at a point A between the target 2 and the ionization mechanism 6 with a magnetic flux density of 200 G, and the film is formed on the same substrate having a groove. The bottom coverage ratio was 0.2 5 // m and the aspect ratio was 4, and then the bottom coverage ratio of the deposited film was measured to obtain a good bottom coverage of 40%. (Example 10) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs under the conditions of Example 9, S i 0 2 and A 1 were deposited on the A 1 substrate at 100 nm and 2 0 nm, respectively. The degree of thickness is, however, Si 0 2 and A 1 and DC and RF power supplies used for the target 2 as sputtering power supplies. This substrate is formed by reactive etching, and its groove has a bottom width of 0 · 5 // m and an aspect ratio of 4. When the dielectric strength is measured between the A 1 substrate and the A 1 layer to obtain a good dielectric strength of 5 0 V. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 public director) -26-589392 A7 B7 V. Description of the invention such as) (Example 1 1) (Please read the precautions on the back before filling this page) In this example In the process gas introduction mechanism 5 is immediately placed between the target 2 and the magnetic field generating mechanism 70, as shown in FIG. 9, or between the ionization mechanism 6 and the magnetic field generating mechanism 70, as shown in target 12 in FIG. Up. By maintaining the amount of Ar gas introduction constant and fixing the conduction valve in the composite evacuation system 14, the pressure P of the sputtering chamber 1 is set to 2 Pa and the residence time r of the argon gas in the sputtering chamber 1 is It is set to 0.3 seconds. The film is then formed on a substrate having a groove with a groove bottom width of 0 · 2 5 # m and an aspect ratio of 4. Material of the target 2: Iron Target size: 76.2mm diameter '3mm thickness Feed to target power: 400W Distance between target and substrate: 1 5 5 mm Base size: 2 inches (50 · 8mm) diameter, film thickness 2 0 0 mm Sputtering chamber pressure: 1 · 0 P a Process gas: Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

Magnetic flux density at point A: 2 0 0 G

Ionization mechanism grid voltage: 50 V

Ionizer grid current: 2 0 A

Ionizing mechanism floating supply voltage:-4 0 V AC voltage applied to electrode 10: 0 V (maximum),-60 V (minimum) AC frequency applied to electrode 10: 500 kHz This paper size applies Chinese National Standard (CNS) A4 Specifications (210X297 mm) _ 27-589392 A7 _ B7 V. Invention Description Red)

Load ratio of AC voltage applied to electrode 10: 1: 100 Magnetic field strength at point A: 150 G (Comparative Example 1) Under the same conditions as in Example 11, the film was formed in the same grooved On the substrate, the bottom width of the groove is 0 · 2 5 / zm and the aspect ratio 4, except that the processing gas introduction mechanism 5 is placed between the ionization mechanism 6 and the substrate holder 8. (Comparative Example 2) Under the same conditions as in Example 11, the film was formed on the same substrate with a groove, the bottom width of the groove was 0 · 2 5 // m, and the aspect ratio was 4 except that using this A processing gas introduction mechanism 5 having a hole-type structure, in which the gas is blown out only through a hole to replace the circular structure. (Comparative Example 3) Under the same conditions as in Comparative Example 2, the film was formed on the same substrate having a groove with a bottom width of 0.25 / m and an aspect ratio of 4 except for the processing gas. The introduction mechanism 5 is placed 10 cm from the outer periphery of the magnetic field generating mechanism 70. This bottom coverage ratio is measured in the center of the same substrate. Table 5 shows the results. This result shows that the processing gas introduction mechanism 5 ′ placed in this example, that is, a round paper with the configuration and configuration shown in FIGS. 6 and 9 with a large number of holes, is prepared in accordance with the Chinese National Standard (CNS) A4 specification (210X297). Mm) -28-(Please read the precautions on the back before filling out this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives printed 589392 A7 _ B7 V. Invention description fried) (Please read the precautions on the back before filling out This page) mechanism has a bottom cover ratio, compared to this comparative example. When the film is formed on a substrate with a recess, the bottom width of the groove is 0 · 2 5 # m and the aspect ratio is 4, and by the conventional low-pressure remote sputtering method, this bottom coverage ratio is about 16%. This shows that this example provides a higher bottom coverage ratio compared to the conventional low pressure remote sputtering method. (Example 1 2) Under the conditions in Example 11, a film was formed, and copper was used for this purpose. (Comparative example) Under the conditions of Comparative Examples 1, 2 and 3 used in Example 11, the film was formed, and copper was used for this purpose. The bottom coverage ratio was measured in the center of the same substrate. Table 6 shows the results. This result shows that the processing gas introduction mechanism 5 as in this example and the mechanism arranged in a circular structure with a large number of holes also increase the bottom coverage ratio as in Example 11. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (Example 13) Under the conditions in Example 11, the film was formed, using T b F e C 〇 as the ternary alloy for the target. (Comparative example) Under the conditions of Comparative Examples 1, 2, and 3 used in Example 11, the film was formed, and T b F e C 〇 was used as the ternary alloy for the target. National Standards (CNS> A4 Specification (210X297mm) _ 29-Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 589392 A7 B7 V. Invention Description 0) Gaby was measured in the center of the same substrate. Table 7 shows the results. This result shows that the mechanism placed in the processing gas introduction mechanism 5 as in this example and the mechanism arranged in a circular structure with a large number of holes also increased the bottom coverage ratio as in Example 11. This result also shows that even materials used for magneto-optical recording media such as T b F e C 0 provide a high bottom coverage ratio. (Example 1 4) Under the conditions in Example 11, a film was formed, and a target Sio2 and R F power supply for the target was used as the sputtering power supply 4. (Comparative example) Under the conditions used in Comparative Examples 1, 2, and 3 in Example 11, a film was formed, and the target S i 0 2 and R F power supply were used as the sputtering power supply 4. This bottom coverage ratio is measured in the center of the same substrate. Table 8 shows the results. This result shows that the bottom cover ratio as in Example 11 is increased by placing the processing gas introduction mechanism 5 as in this example and the mechanism arranged in a circular structure with a large number of holes. Even when RF power supplies are used as sputtering power supplies. (Example 15) Figure 13 is a free film forming apparatus in this example. This example is adopted so that a reaction film can be formed by introducing a reaction gas into the chamber, in which a reaction gas introduction mechanism 80 is installed. This reaction gas introduction mechanism is 80. The paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ~ -30- (Please read the precautions on the back before filling this page)

589392 A7 ___B7_ V. Description of the invention Red) It installs a reaction gas such as nitrogen, and the reaction gas introduction mechanism 80 is structured like the processing gas introduction mechanism 5 and is placed so that this gas is uniformly fed into the ionization space 6 0 6. For example, as for the protective films S i N and S 02, N 2 and O 2 are introduced, respectively, and as for T i N and N 2 used for the barrier film, they are introduced. The material used for the target 2 and the type of the reaction gas introduced into the reaction gas introduction mechanism 80 can be changed depending on the required reaction film. The reaction gas is also ionized in the ionizing space 6 06 together with the sputtering particles and the processing gas particles. In this example, using a free film formation device having the structure described above, a reaction film (S i Nx film) is formed on a silicon substrate with a groove, and the bottom width of the groove is 0 · 2 5 // m and the aspect ratio 4 and 5 minutes on a flat substrate under the following conditions. The bottom coverage ratio and substrate temperature were measured. In order to generate the electric field 9, a pulse waveform is applied to a maximum amplitude voltage of 3 0 V, a maximum applied voltage of 0 V, 500 Hz, and a load ratio of 1: 10 0 °. Material of target 2 · Silicon

Feed power to target 2 · 3 0 0W Sputtering chamber pressure: 1 p a Process gas: Argon Process gas flow rate: 2 〇 S C C m Reaction gas: N 2 Reaction heat body flow rate: 60 sccm

Ionization mechanism grid voltage: 50 V

Ionization grid current: 2 0 A This paper size applies to Chinese National Standard (CNS) Α4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -31-589392 A7 B7 V. Description of the invention (e.g.) Ionization mechanism potential control power supply: floating (please read the precautions on the back before filling this page) (Comparative example 1) Under the same conditions as in Example 15, the membrane It is formed by feeding an RF frequency of 200W to the electrode 10 at 13.56 MHz. The bottom cover is more than measured. (Comparative Example 2) Under the same conditions as in Example 15, a film was formed without using an ionizing mechanism. This bottom coverage ratio is measured. Table 9 shows the results. They indicate that this example significantly increases the bottom coverage ratio compared to film formation by applying R F to the electrode 10 or by a conventional sputtering method. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The above reasons are as follows. If the reactive gas molecules approach the substrate 7, a reduced number of sputtered particles are incident on the substrate at a normal angle. This is because some of the ionized sputtering particles traveling toward the substrate 7 at a vertical substrate angle under the action of the magnetic field 9 are dispersed by the reactive gas particles when they collide with them. Therefore, the bottom coverage ratio is reduced. On the other hand, in this example, the reactive gas particles are also ionized, and incident on the substrate 7 along the magnetic field 9 to form a reaction film, so that the bottom coverage ratio is increased. This example provides a significantly increased bottom coverage ratio of about 40%, whereas the conventional low pressure remote sputtering method provides a bottom coverage ratio of about 20%. When R F is applied to the electrode 10, the substrate reaches a temperature of 200 ° C or higher. In contrast, this example provides a significant reduction in substrate temperature of approximately 50 ° C. This is almost the same as the paper size applied to the Chinese National Standard (CNS) A4 specification (210X297 mm 1 ~ -32-589392 A7 __ B7 by the conventional sputtering method) 5. The film of the invention description (30) is formed in this state The substrate temperature. This result shows that the deposited film can be formed not only on semiconductor substrates, but also on substrates made of materials with low thermal resistance, such as resins widely used in optical discs and magneto-optical discs. (Example 1 6 ) Under the same conditions as in Example 15, sine, rectangular, and triangular waves and offset sine, rectangular, pulse, and triangular waves with the maximum applied voltage set at 0 V are applied to the electrodes to generate the electric field 9, when the film When formed. There are three types of rectangles to be applied: rectangular waves 1, 2, and 3. The rectangular wave 1 changes periodically to ground potential so that the maximum voltage application time is almost equal to the minimum voltage application time. The rectangular wave 2 is negative And it changes periodically so that the maximum voltage application time is almost equal to the minimum voltage application time. The rectangular wave 3 makes the maximum voltage application time be 1/100 or less, depending on the minimum voltage application time The film is formed at a maximum amplified voltage of 30 V and different frequencies. The bottom coverage ratio and substrate temperature are measured. Table 10 shows the results. Any waveform and frequency provides the actual bottom coverage ratio. In particular, rectangular waves 3 and the pulse wave allow a good film to be formed. (Example 17) Under the conditions of Example 17, the film was formed to apply a maximum voltage of 0 V and different maximum amplitudes applied to the electrode 10 at 500 k Η z Voltage. The bottom coverage ratio and substrate temperature are measured. Table 1 1 shows the results. Any waveform provides an actual coverage ratio of 30 to 100 V. The maximum paper size applies to the Chinese National Standard (CNS) Α4 specification (210X297). -33-(Please read the notes on the back before filling out this page), 1T -S. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, 589392 A7 B7 V. Description of Invention 0) Amplitude voltage. In particular, the pulse wave and the rectangular wave 3 are obviously effective at a maximum amplitude voltage of 30 to 1 ο 0 v. The results show that the pulse wave and the rectangular wave 3 can be used for a substrate made of a material having a low thermal resistance, such as a resin 'because this shape wave generates a smaller temperature increase than other substrates. (Example 18) Figure 14 is a schematic diagram of a free film forming apparatus in this example. The film forming apparatus is configured as shown in FIG. 1 and has an auxiliary electrode 2 3 located near the substrate 7 and an electrode 1 Q mounted on the back side of the substrate 7. It has first voltage applying mechanisms 11 and 12 for applying periodicity. Change the voltage to electrode 10. Auxiliary ® 亟 urge 2 3 intent. The distribution of the electric field 9 at the end of the substrate 7 is made the same as the center of the substrate. The auxiliary electrode 23 is adopted so that the same voltage as that applied to the electrode 10 is applied to the auxiliary electrode by a second voltage applying mechanism, that is, the functional synthesizer 21 and the power amplifier 22. A negative DC voltage may be applied to the auxiliary electrode 2 3. The DC power supply can replace the functional synthesizer 21 and the power amplifier 22. If the same voltage is applied to the electrode 10, for example, a voltage having a waveform shown in FIG. 3 should be applied to the auxiliary electrode. Using the equipment of Figure 14, the film was formed under the following conditions: Target size: 76 · 2mm diameter electrode 10 Size: 76 · 2mm diameter auxiliary electrode (substrate surface size) size: 8 6 · 2mm inner diameter and 9 6 · 2 G ap between mm outer diameter electrode 1 〇 and auxiliary electrode: 5 mm Target material: aluminum This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -34-(Please read the note on the back first Please fill in this page again for details), 11 άφ. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A7 B7 V. Description of Invention Bismuth)

Power of feeding target: 500W Base size: 76 · 2mm diameter (please read the precautions on the back before filling this page) Pressure in the sputtering chamber: 1.3 Pa discharge gas: argon discharge gas flow rate: 200 sc cm As shown in Table 12, the results show that this example significantly increases the bottom coverage ratio at the end of the substrate 7. For example, when the auxiliary electrode is at the ground potential, the bottom coverage ratio is 8% at a distance of 3 mm from the end of the substrate toward the center, and when the auxiliary electrode is floating potential, the bottom coverage ratio is 20%. On the other hand, when the maximum V 1 and minimum V 2 voltages applied to the auxiliary electrode are set at -1 V 0 to 0 V and 60 V, respectively, the bottom coverage ratio is 3 mm from the end of the substrate toward its center. The distance is about 40%, which is the same as in the center of the base. This fact indicates an increase in the effective area of the substrate. This in turn means that a high bottom coverage ratio is arranged over the entire surface of the substrate, when the next generation DRAM, magnetic domain wall displacement type magneto-optical memory media, etc. are produced. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (Example 19). By reactive etching, grooves with a bottom width of 0 · 5 # m and an aspect ratio of 4 were formed in most of the sample A 1 substrates. According to Example 18, using the Si 102 for the target and the RF power supplier for the sputtering power supply, the S i 0 2 film was formed on the substrate of the sample A 1 to apply the largest difference to the auxiliary electrode 2 3 V 1 and minimum V 2 voltage. This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) -35-589392 A7 B7 5. Invented) According to Example 18, different maximum V 1 and minimum V 2 voltages are applied to the auxiliary electrode 23. An A1 film is formed on the substrate of sample A1, and a Sio2 film has been formed thereon as described above. Therefore, S i 0 2 film and A 1 film were obtained with thicknesses of 20 nm and 300 nm respectively on the outside of the groove. The dielectric strength is measured between the aluminum substrate and the aluminum layer formed on the center of each substrate at the bottom of the groove and at a distance of 3 mm from its end toward its center. Table 15 shows the results. For comparison purposes, Tables 1 and 3 also show the measurement results of the dielectric strength of the auxiliary electrode at the ground potential and floating potential under the above conditions. As shown in Table 13, the results show that this example significantly increases the dielectric strength at the end of the substrate. For example, when the DC voltage is -6 0V or the maximum voltage VI is 0 to 10V and the minimum voltage is 60V, and is applied to the auxiliary electrode 23, a dielectric strength of about 13 V is provided at the end of the substrate. It is equal to the strength of the medium in its center. In the film formation under the conditions of this example, the floating potential is in the range of 0 to 10 V, as described above. From the result of this example, the maximum voltage V 1 is set to obtain a voltage by subtracting 10 V from the floating potential, and thus a more appropriate result is obtained. (Example 20) Figure 15 is a free film forming apparatus of this example. This device has the configuration shown in Fig. 1. It is assumed that the electrode 10 is larger than the substrate 7. For example, when the substrate 7 is a disc, the electrode 10 also has a larger diameter than the substrate. Electrode 1 0 This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) 36-(Please read the precautions on the back before filling in this tribute) 、? Γ Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 589392 A7 _______ B7 _ _ V. Description of the invention) Extend beyond the end of the base 7. The extension 3 of the electrode 10 forms an electric field. This electric field causes the electric field at the end of the substrate 7 to be perpendicular to its surface, so that the electric field is uniformly distributed over the entire surface of the substrate 7. Using this equipment, the film is formed under the following conditions: Target size: 7 6 · 2mm diameter Material used for target 2: Aluminum feed target 2 Power: 500W Sputtering chamber 1 Pressure: 1.3Pa Base size: 76 · 2mm diameter Discharge gas: Argon discharge gas flow rate: 200 sc cm

Ionization mechanism grid voltage: 50 V Ionization mechanism grid current: 2 A (at the time of film formation) Ionization mechanism floating supply voltage: 0V Electrode 10 shape: Disc applied to electrode 10 Voltage: 0V ( Maximum), -6 0 V (minimum) Frequency applied to the electrode 10: 500 kHz Load ratio of voltage applied to the electrode 10: 1: 1 00 Under these conditions, the film is formed on a sample substrate with a groove, with a concave The groove bottom width is 0.25 "m and the aspect ratio is 4. The ratio of the diameter of the electrode 10 to the diameter of the substrate 7 is different due to the different shape (size) of the electrode 10. The bottom coverage ratio is measured in the center of the substrate And a distance of 3 mm from the end of the base toward its center. As shown in Figure 16, the results show that the paper size in this example applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -37-(please first (Read the notes on the back and fill out this page)

Printed by 1T S. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A7 B7 V. Description of Invention 鲊) Obviously increase the bottom-to-bottom coverage ratio of the substrate. At a distance of 3 mm from the end of the substrate toward its center, a bottom coverage ratio of about 40% is obtained, which is the same as the center of the substrate when the electrode 10 has twice the diameter of the substrate 7. In the film formation under the conditions of this example, the floating potential is in the range of 0 to 10 V, as described above. From the result of this example, the maximum voltage V 1 is set to be obtained by subtracting 10 V from the floating potential, thereby obtaining a more appropriate result. (Example 21) Under the conditions of Example 20, Si02 and A1 were used for the target, and the RF power supply was used for the sputtering power supply. By reacting uranium engraving, grooves having a base width of 0 · 5 // m and an aspect ratio of 4 were formed in the bases of several samples A 1. The Si 102 film and the A 1 film are formed to the extent that the diameter of the electrode 10 is different from the diameter of the substrate 7 due to the different diameters of the electrode 10. The S i02 film and the A 1 film were 100 nm and 300 nm outside the groove, respectively. At the bottom of the groove at the center of each sample and at a distance of 3 mm from its end toward its center, the dielectric strength was measured between the aluminum substrate and the aluminum layer formed on it. Figure 17 shows the results. They show that this example significantly increases the dielectric impedance at the end of the substrate 7. A dielectric impedance of about 1 3 V is obtained at a distance of 3 mm from its end toward its center, which is the same as the dielectric impedance at the center of the substrate. When the diameter of the electrode 10 is greater than the diameter of the substrate or the longest is suitable for this paper scale China National Standard (CNS) Α4 Specification (210X297 mm) -38-(Please read the precautions on the back before filling this page), 1T- άφ. Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 589392 A7 B7 V. Invention Explanation is thin) When the angle is twice as large. (Example 2 2) Fig. 18 is a schematic diagram of a free film forming apparatus of this example. This device has the configuration shown in Fig. 1. It is assumed that the ionization mechanism 6 is provided with a thermal isolation mechanism 608. Figs. 19A and 19B are schematic diagrams of the structure of the ionization mechanism 6. Figs. Figures 19A and 19B are a top view and a side view, respectively, of an ionization mechanism 6. The ionization mechanism 6 has filaments 6 0 1 and nets 6 0 2 ′ which are connected in series or in parallel to each other and are adopted from filament DC. The power supply 603 feeds current to the filament 601 to heat it, thereby causing the filament to emit thermoelectrons. This grid 6 2 has a flat grid structure. This device is used so that a positive voltage of the grid DC power supply 60 4 is applied to the grid 6 0 2 ′ to accelerate thermoelectrons from the filament 6 0 1 toward the grid 6 2. An isolation plate 608 and side plates are installed around the ionization mechanism 6 to cover the filament 601 and the grid 602 on the inside. The isolating plate 608 is placed so that it is not closed on the path of the sputtered particles from the target 2 to the substrate 7, and the heat emitted from the filament 601 and the grid 602 does not reach the substrate 7 directly. The isolating plate 608, which has a water cooling mechanism 6 0 9, is designed to prevent the temperature of the terminal of the electrons introduced by the radiant heat from rising and prevent the radiant heat from entering the surrounding environment. One side of the filament 6 0 1 and the grid 6 0 2 is at the same potential as the shell. This shell is usually floating. However, to prevent electron diffusion, a positive DC voltage can be applied to the case, using a potential-controlled DC power supply 605. The above film forming equipment is used to form a film under the following conditions: Material used for target 2: aluminum paper size applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) _ 39-(Please read the note on the back first (Fill in this page again)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T 589392 A7 __Ξ_ V. Description of the invention ^) Feed target 2 Power: 500W Sputtering chamber 1 Pressure: 1 · 3 3 P a Process gas: Argon process gas flow rate: 200 sc cm Ionization mechanism grid voltage: 1 0 0 V Ionization mechanism potential control supply voltage: frequency of AC voltage floating to electrode 10: 100kHz Figure 2 0 shows the relationship between the observed film formation time and substrate temperature, when When the isolating plate 6 0 8 is removed from the ionization mechanism 6 and when the uncooled isolating plate is installed in this mechanism. In this example, it is checked how the substrate is changed, depending on whether the insulation plate 608 is installed. As shown in Figure 20, when the separator is removed, the substrate temperature increases with the film formation time, so that the substrate temperature has reached 200 ° C, and when the film formation time exceeds 10 minutes. Although this substrate temperature also increases with the film formation time, when the uncooled insulation board is installed, the temperature rise is small, and the substrate temperature no longer rises, after the film formation time exceeds 10 minutes. Furthermore, the substrate temperature reached only 50 ° C. As mentioned above, installing the isolator makes it possible to significantly reduce the substrate temperature rise. It was found that this example allows the film to be formed on a substrate with a low thermal resistance, and high-frequency plasma-assisted ionization sputtering, and found that this example is effectively applicable to a substrate with a low thermal resistance. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) · 40-(Please read the precautions on the back before filling out this page) Threading · · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 589392 A7 B7 V. Description of the invention) (Example 2 3) In this example, it is checked how the substrate temperature changes, depending on whether the isolation plate of the ionization mechanism is water-cooled. Fig. 20 shows the relationship between the film formation time and the substrate temperature as observed, when the separator is cooled by water, and when it is not cooled by water. The substrate temperature is lower when the separator is cooled by water than when it is not cooled by water. Furthermore, when the separator is cooled by water, the substrate temperature does not rise any more, and after the film formation time exceeds 10 minutes. This means that the water-cooled insulation plate allows the temperature of the substrate to rise even further. Therefore, a water-cooled insulation plate was found to allow the film to be formed on a substrate having a lower thermal resistance, as compared with Example 22. (Example 2 4) Under the conditions of Example 22, the film was formed on three types of substrates having grooves, having a groove aspect ratio of 4. The bottom coverage ratio is measured when the isolator is installed and when no isolator is installed. Figure 2 shows the results. In this example they indicate that a film having a high bottom coverage ratio can be formed on a substrate having a low thermal resistance. For example, Teflon and polycarbonate substrates are deformed or burned when the film is formed on a substrate without a separator. On the other hand, the substrate with the water-cooled insulation plate is not deformed, and a high bottom coverage ratio is obtained. In this example, the radiation from the filament 6 0 1 and the grid 6 0 2 in the ionization mechanism 6 toward the substrate 7 can be prevented, so the temperature rise of the substrate is minimized, because the isolation plate 6 0 8 is disposed in the ionization mechanism 6 And the base 7 to provide a shell covering the ionization mechanism 6. Therefore, it can provide a high bottom coverage ratio, so that the film can be firmly formed on a substrate with low thermal resistance. The paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) 41 (Please read the precautions on the back before filling in this Page), τ

T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A7 B7 V. Description of the Invention Bismuth) The film deposited on it with high frequency plasma assisted ionization cannot be formed. This in turn means that ionized particles can be deposited in pores with grooves with aspect ratios to form a film with a high bottom coverage ratio when manufacturing next-generation DRA M, magnetic domain wall displacement type magneto-optical discs, or the like Time. (Example 25) Fig. 22 shows a free film forming apparatus in this example. This device has a configuration shown in FIG. 1, and this configuration is additionally provided with a magnetic field applying mechanism 7 for an ionization mechanism 6, a reaction gas introduction mechanism 80, an auxiliary electrode 2, 3, and a thermal isolation mechanism 608. Using this device, a film is formed on a magnetic domain wall displacement type recording medium disclosed in Japanese Patent Laid-Open Publication No. 6-29 0 4 96. The magnetic multilayer film is composed of at least three layers, that is, the first, second, and third layers are used for recording. The first magnetic layer is composed of a magnetic film having a lower magnetic wall coercivity than the third magnetic layer at about normal temperature, and the second magnetic layer is composed of a magnetic having a lower Curie point than the first and third magnetic layers. And a third magnetic layer perpendicular to the magnetic film. This device is configured with GdFeCoCr, TbFeCr, TbFeCoCr alloy targets for forming the first, second, and third magnetic layers, respectively, and is configured to form a SiN film as an interference layer and a protective layer. Figure 23 shows the shape of the substrate used in this example. This substrate is formed as follows. The intervals between the grooves and their depths are set at 1 · 0 μm and 0 · 2 // m, respectively, and the flat surface parallel to the surface of the substrate is 0.4 4 // m wide, and are arranged in the grooves. Between the connection area and the bottom of the groove. The inclination between the connection area and the groove is inclined relative to the surface of the substrate with a diameter of 86 mm. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ -42-(Please read first (Notes on the back then fill out this page)

, 1T S. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A7 B7 V. Description of Invention ㈣)) 70%. Under the conditions given below, the film was continuously formed on the substrate as described above so that the vacuum was not lost. Target size: 127mm diameter, 3mm thickness

Feed target 2 power: 500W distance between target and substrate: 1 5 5 mm substrate size: 2 inches (50 · 8mm) diameter film thickness: 200nm sputtering chamber 1 pressure: 1 to 2 · 5 P a sputtering discharge Gas: Argon reaction gas: N2 (when Si Nx film is formed)

Ionization mechanism grid voltage: 3 0 V Ionization mechanism grid current: 2 〇 A Ionization mechanism floating supply voltage:-30 V applied to the electrode 1 0 voltage: Ο V (maximum),-3 Ο V (minimum) applied to Electrode 10 frequency: 500kHz Load ratio of voltage applied to electrode 10: 1: 10

The magnetic flux density at point A: The composition and thickness of the 150 G film are as follows: substrate / S iNx, 90 nm / GdFeCoCr, 30 nm / TbFeCr, 10 nm / TbFeCoCr, 80 nm / S iNx, 80 nm; substrate / The thickness given above by the interference layer / first magnetic layer / second magnetic layer / third magnetic layer / protective layer 0 is measured in the connection area. With configuration 2-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -43-(Please read the notes on the back before filling out this tribute) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A7 B7 V. Description of Invention (41)

m m square wafer on the target, the amount of C0 and Cr is adjusted so that the composition of each magnetic layer is close to the compensation component. The Curie points of the first, second, and third magnetic layers are set at 2 1 0 t:, 120 ° C, and about 290 ° C, respectively. The processing pressure is adjusted to be most suitable for each layer. With N2 gas, a S i N X film for interference and protection layers is formed, which is used for silicon targets. To protect the substrate of this result, it is coated with a UV curing resin. (Comparative example) When the ionization mechanism 6 is not in operation, the film is formed by the conventional magnetic sputtering method under the conditions of Example 26 except that the sputtering pressure and the distance between the target and the substrate are set to 0. 3 P a and 1 8 Omm. The sample generated in this way is mounted on a driving device having a laser head generating a wavelength of 680 nm and a light head having a NA lens of 0.5. This sample was rotated at 7 · 5 Η z to observe the recording characteristics at a radius of 31 to 33 mm. When the magnetic field is modulated at 7. 5 Μ Η z, a magnetic field modulation recording with a logo length pattern of 0 · 1 # m is repeated using a sliding head, and the connection area and the groove are illuminated by a DC laser beam. These recording signals are generated at a reproduction power of 2.5 mW to compare the dependence of the sample on the C / N ratio of the recording power. A general single-beam optical system is used for evaluation. By heating due to the reproduction beam, temperature increase or decrease is provided to move the magnetic domain wall. Figure 24 shows the measurement results. In this example, the C / N ratio is increased by 5 d B or higher and the recording power is 4 mW or higher for the land and groove, compared to the sample of the comparative example. In addition, if the heating area is formed on the slope of the recording track at both ends, the Chinese National Standard (CNS) A4 specification (210X297 mm) = 44-(please read first) (Notes on the back then fill out this page)

589392 A7 B7 V. Description of the invention h) or higher recording power, the amount of film deposition on the slope is so small that the magnetic combination is negligible, and no magnetic domain wall exists on the magnetic domain side wall. Therefore, a recording mark can be formed as a magnetic domain in which the magnetic domain walls before and after the recording track are then separated. Because of this, in the recording track, the magnetic domain wall can be stably moved in the direction of the track, using the temperature slope. On the other hand, in the comparative example, if the heating area is formed on the recording track and the slope at both ends thereof, the magnetic domain wall exists on the side of the magnetic domain, because the magnetic domain wall is also formed on the slope on. The recording mark is thus formed as a closed magnetic domain in which the magnetic domain walls before and after the recording track are composed together via the magnetic domain walls on the side of the magnetic domain. Because of this, when the magnetic domain wall in the recording track moves in the direction of the track by increasing or decreasing the use temperature, the release change of the movement of the magnetic domain wall depends on whether the magnetic domain wall moves in the direction in which the magnetic domain extends or contracts. . As a result, the magnetic domain wall cannot be moved steadily, noise increases, and the C / N ratio decreases. According to another mode in this example, as shown in FIG. 25, instead of installing the electrode 10 of the auxiliary electrode 23, the extension portion can be configured in the device to obtain a recording medium having the same characteristics. As described above, the present invention makes it possible to form a film on a substrate having grooves (including continuous depressions and independent depressions, such as holes) at a high bottom coverage ratio, with a high aspect ratio of the grooves, but safely preventing the substrate The temperature rises. The present invention also makes it possible to deposit a reaction film with good vertical growth, because the present invention allows reactive gas particles to be perpendicular to the substrate and incident on the substrate. The present invention may further provide a film forming method and a film forming apparatus, which are preferably used for magnetic domain wall displacement type recording media and the like, which need to be connected to this paper. The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 Mm) -45 · (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ~ * --- Order ------ line ----- 589392 A7 B7 V. Description of the invention ㈦) The slope between the zone and the groove to have different characteristics from the connection zone and the groove Table 1 Base temperature V1 (V) V2 (V) -40 -60 -100 20 180 t: 182 t: 179 ° C 10 179 177 177 5 160 158 162 0 60 59 61 -5 56 57 56 -10 53 53 52 (Please read the precautions on the back before filling this page)

， 1T S. Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed to the Chinese National Standard (CNS) A4 Specification (210X297 mm) -46 589392 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 Table 2 Bottom coverage ratio V1 (V) V2 (V) High-frequency plasma-assisted ionization sputtering Low-voltage remote sputtering -10 -20 -40 -80 -100 0 11 (%) 33 (%) 39 (%) 38 (%) (40%) 36 (%) 16 (%) -5 12 31 40 39 39 -10 a 31 40 40 39 -20 — — 7 8 9 -40 — — — 7 7 Table 3 Medium strength V1 ( V) V2 (; V) Comparative Example -5 -10 -20 -40 -60 -100 -140 -180 0 2.5 2.5 10 13 12 12 6 4 2 -10 — — 9 13 12 13 7 4 National Standard (CNS) A4 Specification (210X297 mm) -47-(Please read the precautions on the back before filling this page)

589392 A7 B7 V. Description of the invention ㈦) Table 4 The bottom coverage ratio printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V1 (V) V2 (V) -10 -20 -40 -60 -100 0 7 (%) 38 (% ) 33 (%) 33 (%) 34 (%) -5 8 27 32 33 32 -10 — 27 33 33 32 -20 — _ 7 8 7 -40 — — 7 7 Table 5 Position of the gas guide mechanism 5 Gas guide mechanism 5 Structure ratio covered at the bottom (%) Round shape between ionization mechanism 6 and magnet mechanism 45 Round shape between ionization mechanism 6 and base bracket 8 35 round shape directly above target 2 43 ionization mechanism 6 and magnet mechanism Single hole type between 7 and 37 10cm away from single hole type 28 on the outer periphery of self-magnetic field generating mechanism 70 (please read the precautions on the back before filling this page), 11 This paper size applies to China National Standards (CNS) A4 Specifications (210X297 mm) -48-589392 A7 B7 V. Description of the invention (46) Printed by Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs, Table 6 Position of the gas guide mechanism 5 Structure ratio of the bottom cover of the gas guide mechanism 5 (% ) Round type between ionization mechanism 6 and magnet mechanism 44 44 round type between ionization mechanism 6 and base support 8 Directly above the target 2 Round type 43 Single hole type 36 between the ionization mechanism 6 and magnet mechanism 7 The outer periphery of the magnetic field generating mechanism 70 is 10 cm away from single hole type 26 Table 7 Position of the gas guide mechanism 5 Bottom of the gas guide mechanism Structure ratio covering 5 (%) Round shape between ionization mechanism 6 and magnet mechanism 46 Round shape between ionization mechanism 6 and base support 8 34 round above target 2 44 single hole between ionization mechanism 6 and magnet mechanism 7 Type 37. The outer circumference of the self-field generating mechanism 70 is 10 cm away from the single-hole type 28 (please read the precautions on the back before filling this page). _ S. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297mm) (Centi) -49 _ 589392 A7 ------------__ ^ V. Description of the invention 0) --- ~ ----- ^ Table 8 Position of the gas guide mechanism 5 Gas guide bow 丨F bottom cover ------- ----- Structure ratio of structure S (%) Round shape 41 between the structure 6 and the magnet mechanism 7 ilL Round shape 31 between the structure 6 and the base bracket 8 Single hole type 33 between the upper circular type 40 structure 6 and the magnet mechanism 7 The distance from the outer periphery of the magnetic field generating mechanism 70 〇0cm single hole type 25 ( (Please read the notes on the back before filling out this page)

Order

In this example, the coverage ratio of RF13.5MHz 200W JtiL is 43% 24% 15% ^ temperature 53 t: 200 ° C or higher 45 ° C printed by the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. (CNS) A4 specification (21GX297) -50- 589392 A7 B7 V. Description of the invention (48 Table 10 Frequency waveform (Hz) 500 1k 10k 100k 500k

1M Δ sine wave

X _Δ Δ

A

A

A sine wave

A A " > Γ Δ

X

A _Λ Λ rectangular wave χ · _Δ " χ "

A Δ_ A " > Γ Λ Δ rectangular wave 2

X

X

A A " χ " A " χ " 1 Ο ο 〇 ο Rectangular wave 3 Δ Δ Δ 〇 〇 " θ 'Ο Ο 〇 〇 Pulse wave

X

X

X

X Δ Δ " Eight 7 V L angular wave Λ Λ Λ

X

X A " > Γ

A _Δ " > Γ Δ Δ i angular wave

X

X

A Δ

X A " > < "

A Printed bottom coverage ratio by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs • 〇: △ X attention is good; bottom coverage ratio of 30% or higher; and base temperature below 70 ° C is almost effective; equal to or higher Bases with bottom coverage ratios of 20% and 30% equal to or higher than 70 ° C and below 150 ° C are invalid {& bottom coverage ratios at 20%; and 'ί 5 0 ° The substrate temperature of C or higher is the temperature of the resin. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 51-589392 A7 B7 V. Description of the invention (49) Table 11

Frequency (V) 10 30 60 100 V / X △, △ Δ • Sine wave XX 'XXX Δ △ 〇 Sine wave, Δ XXX 4 = tFb X △ △ A Rectangular wave 1: XXXX 1 LX △ 〇〇 Rectangular wave 2 V △ XXX No. 1 factory. △ 〇〇〇〇 Rectangular wave 3 〇〇〇〇WW × Pulse wave 〇Δ Δ Δ X Δ Δ Δ Triangle wave XXXX / V \ AX Δ 〇 △ Triangle wave △ (Please first Read the notes on the reverse side and fill out this page), 11 Φ. Employees ’cooperation with the Intellectual Property Bureau of the Ministry of Economic Affairs # Qiu Bottom Bottom Coverage Ratio _" Good; Base temperature 0: 30% or higher bottom coverage ratio; and [below A substrate temperature of 70 ° C < is almost effective; A is equal to or higher than 20% and a bottom coverage ratio of 30% or higher is not effective for a substrate f of 70 ° C and lower than 150 ° C; x: bottom coverage ratio less than 20%; and bottom note of 15 ° C or higher. f substrate temperature is the temperature of the resin. The paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 52- 589392

A

7 B Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The invention description buckle) (%) Ugly_Peng CXIT ββ 颍 CO 镒 Ground 颍 oo Central oo cn Maximum voltage V2 (V) g 1 i 1 颍 oo 2 cn ON CSI CO cn m CO o 颍 \ 〇csi CN oo CN < 3 \ inch! i 1 Central oo cn CN cn oo CO oo CO OO cn O \ '' 'i 1 颍 oo cn as cs V〇cn VO CO 艺 〇cn a \ cn oo cn oo cn OO cn s 1 龌 〇CN | CO σ > CO o CN cs 〇 \ m cn ooo oo CO o borrow cn m C < l wo CO wn CO CO CN C < l ON CO wo cn o \ cn o 〇oo CO 1 颍 CO cn CO 1 Central CO VO CO oo cn ON cn as m 1 o 颍 CN Csl CN wn 1 1 See OO m Art oo cn 〇 \ cn 1 1 o Borrow 1 r -1 1 1 1 1 cn 1 1 1 1 Minimum voltage V1 (V) DC voltage oor—H 1 (Please read the precautions on the back before filling this page)

、 1T S. This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -53 589392

7 7 AB 5. Description of the invention ...) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 〇〇lliliil CN 镒 ground 龌 1-i Central r—H Maximum voltage V2 (V) gr—Η 1 Lai \ o CentralΗ 〇〇 CN tir—H ο 颍 卜 oo 卜 oo inch r— < 1. 诔 CN oo CN οα cs t—H Ο r—i! Grain OQ 〇 \ cn CN CN central cn o cn cs s 龌 cn oo cn cn cn CO central cn τ—H CO cn cs 〇 颍 τ Η \ 〇τ—H i " —H 〇 \ < inch cn o CO cn cn CN 龌 VO inch v〇1 cn i— < OQ CN 1 Ο 颍wo vn CO 1 1 zcn \ < cn cn 1 1 ο 颍 1 1 1 1 1 o 1 1 1 1 Minimum voltage V1 (V) DC voltage un o VO oi—H 1 (Please read the precautions on the back before (Fill in this page)

、 1T -S. This paper size applies to China National Standard (CNS) A4 specification (210X297mm) -54-

Claims (1)

589392 v,: j female A8 B8 C8 D8 Patent Application No. 89 1 25383 Special Application Chinese Application Patent Range Amendment June, 1992 13 Modification method of forming a deposited film by sputtering, including the following steps Ionizing sputtered particles; and applying a periodically changing voltage to an electrode near the substrate; wherein the time for applying a voltage equal to or higher than the intermediate 値 between the maximum and minimum 値 of the periodically changing voltage is shorter than for applying The time equal to or less than the intermediate voltage, and the maximum value of the periodically changing voltage is a negative value. 2 · The method according to item 1 of the patent application range, wherein the maximum value of periodically changing the voltage is sufficient to prevent charging of the substrate and the minimum value of periodically changing the voltage is sufficient to guide particles to the substrate. 3. The method according to item 1 of the patent application range, wherein the amplitude of the periodically changing voltage applied to the electrode disposed near the substrate is in the range of 0 to -10 0 V. 4. The method according to item 1 of the scope of patent application, wherein the voltage applied to the electrode is periodically changed at a frequency of 100 k Η ζ or higher. 5. The method according to item 1 of the patent application range, wherein the voltage applied to the electrode has a rectangular waveform, and the ratio of the time for applying the maximum voltage to the time for applying the minimum voltage is 1/50 or less. 6 · The method according to item 1 of the patent application, wherein the ionization is performed by a hot cathode type mechanism. This paper size applies Chinese National Standard (CNS) Α4 specification (210 × 297 mm) 0 ^-(Please read the precautions on the back before filling out this page), -5't ». Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and Economics 589392 A8 B8 C8 D8 VI. Application for Patent Scope 7 • The method of the first scope of patent application also includes the step of generating a magnetic field near the ionization space, where ionization is performed. 8. The method according to item 6 of the patent application, wherein the hot electrons generated in the ionized space are introduced to the target by a magnetic field. 9 · The method according to item 7 of the patent application, wherein the direction of the magnetic field includes at least a component in the direction of a straight line connecting the target and the substrate. 10. The method according to item 1 of the scope of patent application, further comprising the step of ionizing reactive gas particles in the ionized space. 1 1. The method according to item 1 of the scope of patent application, further comprising the step of applying the same voltage as a negative fixed voltage applied to an electrode near the substrate or an auxiliary electrode disposed near the substrate. 12. The method according to item 11 of the scope of patent application, wherein the voltage applied to the electrode and the auxiliary electrode near the substrate is in the range of 0 to -100V. 13. The method according to item 11 of the scope of patent application, wherein the voltage applied to the electrode and the auxiliary electrode near the substrate is periodically changed at a frequency of 100 kHz or higher. 14. The method according to item 11 of the scope of patent application, wherein the voltage applied to the electrode and the auxiliary electrode near the substrate has a rectangular waveform, and the ratio of the time for applying the maximum voltage to the time for applying the minimum voltage is 1 / 5 0 or less. • 1 5 • The method according to item 11 of the patent application scope, in which the ionization is performed by a hot cathode type mechanism. 1 6 · If the method of the scope of patent application No. 1 is adopted, the paper size near the base applies the Chinese National Standard (CNS) A4 specification (210X297 cm) -2 · --------- ^-^- -Order ----- Ay (Please read the precautions on the back before filling out this page) 589392 Α8 Β8 C8 D8 6. The patented electrodes have extensions around the substrate. 17 · The method according to item 16 of the patent application range, wherein the voltage applied to the electrode near the substrate is in the range of 0 to 100V. 18 · The method according to item 16 of the scope of patent application, wherein the pressure of the electrodes applied to the vicinity of the substrate is periodically changed at a frequency of 1000 kΗz or higher. 1 9 · The method according to item 16 of the scope of patent application, wherein the electrode applied to the electrode has a rectangular waveform, and the ratio of the time for applying the minimum voltage to the time for applying the maximum voltage is 1/50 or more . 20 · The method according to item 16 of the patent application, wherein the ionization is performed by a hot cathode type mechanism. 2 1 · The method according to item 1 of the scope of patent application, further comprising the step of isolating thermal radiation generated toward the substrate during ionization. 2 2 · The method according to item 21 of the patent application scope, wherein the heat radiation is isolated by isolating the structural members. 2 3 · The method according to item 21 of the patent application range, wherein the isolation of thermal radiation is performed in a region other than the traveling path of the ionized particles. 2 4 · The method according to item 22 of the scope of patent application, further comprising the step of cooling and isolating the structural members. 2 5 · The method according to item 22 of the scope of patent application, further comprising the step of applying a predetermined voltage to the isolation structural member. 2 6. — An ionization sputtering device, in which a deposited film is formed by guiding sputtered particles to a substrate, the device includes a sputtering chamber with an evacuation system; the paper size is applicable to the Chinese National Standard (CNS) Α4 Washing (210 × 297 mm) -3---------- install-(Please read the precautions on the back before filling out this page) 4 " .IN Printed by the Intellectual Property Bureau Employees Consumer Cooperatives Manufacturing 589392 A8 B8 C8 D8 VI. Patent application scope Gas guide mechanism for guiding the processing gas into the sputtering chamber; Target placed in the sputtering chamber; (Please read the precautions on the back before filling this page) An ionization mechanism disposed between the target and the substrate; an electrode disposed near the substrate; and a voltage application mechanism for applying a periodically changing voltage to the electrode, so that the maximum and minimum values for applying the voltage to be equal to or higher than the periodically changing voltage are applied; The time between the intermediate voltages is shorter than the time for applying a voltage equal to or less than the intermediate voltage, and the maximum value of the periodically changing voltage is a negative voltage. '27. The device according to item 26 of the patent application scope, wherein the ionizing mechanism is a hot cathode type. 28. The device according to item 27 of the scope of patent application, further comprising a magnetic field generating mechanism arranged near the ionization mechanism. 2 9. The device according to item 28 of the scope of patent application, wherein the direction of the magnetic field lines generated by the magnetic field includes at least the component of the straight line connecting the target and the base. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 30. For the device in the scope of patent application No. 28, the magnetic field generating mechanism includes: a first magnet disposed between the target and the ionization mechanism, and disposed on the substrate relative to the target On the opposite side of the second magnet. 31. The device according to item 30 of the scope of patent application, further includes a mechanism for energizing the processing gas, and the gas is guided from the gas guiding mechanism by an electrode guided to the target side. 3 2. As for the equipment in the scope of patent application No. 28, in which the Chinese paper standard (CNS) A4 specification (210 X 297 gong) is applied to the standard paper size -4-589392 A8 B8 C8 D8 The magnetic flux density at a distance of 30 mm from the center of the range index toward the base is in the range of 150 to 300G. 3 3 · If the device in the scope of patent application No. 26, also includes auxiliary electrodes arranged near the substrate. 3 4 · If the device in the scope of patent application No. 33, further includes: a first voltage applying mechanism for applying a periodically changing voltage to an electrode near the substrate, this type of applying is equal to or higher than the periodically changing voltage The time of the intermediate 値 voltage between the maximum and minimum 値 is shorter than the time for applying a voltage equal to or less than the intermediate 値, and the second voltage applying mechanism is used to apply the same electrode or negative voltage as applied near the substrate. Fix the voltage to the auxiliary electrode. : 3 5 · If the equipment in the scope of patent application No. 33, the ionization mechanism is a hot cathode type. 36. The device according to item 26 of the patent application, wherein the electrode near the substrate has an extension in the periphery of the substrate. 3 7 _If the device in the scope of patent application No. 36, the ionization mechanism is a hot cathode type. 3 8 · If the device in the scope of patent application No. 26, also includes a thermal isolation structure to prevent thermal radiation during film formation from directly reaching the substrate. 39. The device as claimed in item 38 of the patent application, wherein the ionization mechanism is a hot cathode type. 40 · The device according to item 38 of the scope of patent application, wherein the thermal isolation structure is arranged between the ionization mechanism and the substrate. 4 1 · If the equipment in the scope of patent application No. 40, the thermal insulation I paper size applies the Chinese National Standard (CNS) (21GX297 mm) -5----------- 01 ^-( Please read the precautions on the back before filling this page) Order • Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 589392 A8 B8 C8 D8 VI. The scope of the patent application structure is to configure the path of ionized particles from the target to the substrate stand still. 4 2. If the equipment in the scope of patent application No. 38, also includes a cooling mechanism for cooling the isolation structure. 4 3. The equipment according to item 42 of the patent application scope, wherein the cooling mechanism is a water-cooled type. 4 4. The device according to item 28 of the scope of patent application, wherein the gas guiding mechanism is arranged between the target and the magnetic field applying mechanism or between the magnetic field applying mechanism and the ionizing mechanism. 4 5. The device according to item 26 of the scope of patent application, wherein the gas guiding mechanism is a cylindrical tube having a plurality of blowouts L arranged on its central side, and wherein the gas guiding mechanism is configured to surround the borrow The center of the ionization space formed by the ionization mechanism. ---------.— Order ----- 4N (Please read the notes on the back before filling out this page) Printed on paper standards of the Ministry of Economic Affairs, Intellectual Property Bureau, Employee Consumer Cooperatives, this paper applies Chinese national standards (CNS ) A4 size (21〇297mm) -6-