JP2002020861A - Method and system for film deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a deposit film at high bottom coverage on a substrate having a trench at the surface, to suppress rise in the temperature of the substrate to be subjected to film deposition, and to uniformize the distribution of electric field in the vicinity of the substrate. SOLUTION: In the film deposition method where ionized particles are made incident upon the substrate to form the deposit film, a drawing-in electrode 10 is provided on the rear side of the substrate 7 and film deposition is carried out while applying periodically fluctuating voltage which is negative with respect to ground potential to the drawing-in electrode 10, and simultaneously, an auxiliary electrode 23 is provided to the periphery of the substrate 7 and also an extension part 30 is provided to the drawing-in electrode 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus used for manufacturing a semiconductor device such as an LSI and a recording medium such as a magneto-optical disk, and more particularly to a film forming apparatus using ionized particles. The present invention relates to a film forming method and a film forming apparatus for forming a film.

[0002]

2. Description of the Related Art In various semiconductor devices, a film forming process is used for forming wiring, an interlayer insulating film, and a magnetic layer of a magneto-optical disk. Various performances are required for a film forming apparatus used at that time, but recently, improvement in coverage of an inner surface of a hole formed in a base, particularly, a bottom portion is required.

FIG. 10 shows the shape of a film deposited by conventional sputtering. The film deposited on the groove bottom 104 compared to the thickness of the film 100 deposited on the groove top 103 of the base 7
It can be seen that the thickness of 102 is extremely thin. It can also be seen that a film is also deposited on the groove side surface 101.

As an example, a case of a domain wall moving type magneto-optical disk will be described. In conventional magneto-optical disks and compact disks, grooves (grooves) are formed concentrically on the disk, and the grooves are not used for recording information. However, in the domain wall displacement type optical disk, it is necessary to form a functional film in the same manner as a flat portion (land) other than the groove in order to record the bottom portion (groove) at the bottom of the groove. Moreover, in order to prevent interference between the groove and the land, a magneto-optical signal must not be generated on the groove side surface which is a boundary surface, and the amount of film deposited on the groove side wall surface must be reduced as much as possible. That is, in the domain wall displacement type magneto-optical disk, it is necessary to form a film having a high bottom coverage ratio (ratio of a film forming speed on the groove bottom surface to a film forming speed on a surface around the groove).

As a method of forming a film having a high bottom coverage ratio, a low-pressure remote sputtering method, a collimated sputtering method, and a sputtering method assisted by high-frequency plasma proposed in JP-A-10-259480 are known.

[0006] In the low-pressure remote sputtering method, the mean free path is lengthened by lowering the pressure of the normal sputtering method, so that the sputtered particles fly straight without scattering. At the same time, by increasing the distance between the target and the substrate, sputter particles flying perpendicular to the substrate are selectively deposited on the substrate.

In the collimated sputtering method, a cylindrical tube (collimator) having a large number of holes formed in a direction perpendicular to the substrate is provided between a target and a substrate, and only sputtered particles flying vertically to the substrate are disposed on the substrate. And deposit it.

In the sputtering method using high-frequency plasma assist, a high-frequency voltage is applied to the substrate to form plasma near the substrate, and the flying sputter particles are ionized in the plasma space and generated on the substrate surface by the plasma. In this method, sputter particles ionized by a negative voltage (self-bias) are drawn in a direction perpendicular to the substrate surface and deposited.

[0009]

However, in the low-pressure remote sputtering method, the film-forming speed is reduced because the distance from the substrate is long, the utilization efficiency of the raw material (target) is low, and the aspect ratio of the groove is up to 4 in mass production. It is said that the use to a film formation substrate to the extent is the limit. Further, since the film is formed under a low pressure condition, the film stress increases and a large force is applied to the substrate, so that it is difficult to form the film on a soft substrate such as polycarbonate.

[0010] The collimated sputtering method has a problem that the sputtered particles are deposited on the collimator portion, resulting in a loss, thereby lowering the film forming rate and lowering the utilization efficiency of the raw material. Use for a substrate on which a film is to be formed is limited.

The sputtering method using the assist of high-frequency plasma can cope with film formation on a film-forming substrate having a groove aspect ratio of 4 or more. However, since a plasma is generated by applying a high-frequency voltage to the substrate, the sputtering in the plasma is performed. The particles fly into the substrate and heat the substrate. Therefore, it is difficult to form a film on a substrate made of a low heat-resistant material such as a resin which is often used as a substrate material in a recording medium such as a compact disk and a magneto-optical disk.

[0012]

SUMMARY OF THE INVENTION An object of the present invention is to provide a film forming method and a film forming apparatus capable of forming a deposited film with a high bottom coverage ratio even on a substrate having a deep groove formed on the surface. It is in. Another object of the present invention is to provide a film forming method and a film forming apparatus capable of suppressing a temperature rise of a substrate on which a film is to be formed.

Still another object of the present invention is to provide a film forming method and a film forming apparatus in which the distribution of the drawn electric field near the substrate is uniform.

According to the present invention, in a film forming method for forming a deposited film by irradiating ionized particles to a substrate, a lead-in electrode is provided on the back side of the substrate, and the lead-in electrode has a negative period with respect to a ground potential. A film is formed while applying a voltage that fluctuates gradually, and an auxiliary electrode is provided around the base or a lead-in electrode is extended.

[0015]

Embodiments of the present invention will be described below with reference to the drawings.

The device of FIG. 1 is according to an embodiment of the present invention.
This is a film forming apparatus in which ionized particles are incident on a substrate to form a deposited film, and a pull-in electrode 10 is provided on the back side of the substrate 7, and the pull-in electrode 10 has a negative polarity with respect to a ground potential during film formation. Characterized by having first voltage applying means 11 and 12 for applying a periodically changing voltage.

As will be described in detail below, this apparatus is an apparatus utilizing ionized sputtering. The mechanism of ionization sputtering is that the sputtering particles emitted by sputtering the target 2 are ionized by the ionization mechanism 6.
The sputtered particles are ionized by the negative electric field 9 on the surface of the substrate 7 and are incident on the surface of the substrate 7, so that a film can be formed with a good bottom coverage rate.

The film forming chamber 1 is a container made of metal such as stainless steel or aluminum, and is electrically grounded to a reference potential, so that airtightness can be maintained by a gate valve (not shown).

The exhaust system 14 is a complex exhaust system capable of exhausting from atmospheric pressure to about 10 ^-6 Pa, and the exhaust speed can be adjusted by an exhaust speed regulator such as an orifice or a conductance valve (not shown).

The target 2 has a thickness of 3 mm and a diameter of 3 mm, for example.
It has a disk shape of about inch (76.2 mm) and has a sputtering chamber 1 through a backing plate and an insulator.
It is installed in. The backing plate is cooled by water cooling. A magnet mechanism 3 is provided behind the target 2 so that magnetron sputtering can be performed.

The sputtering power source 4 applies a predetermined electric power to the target 2 to generate a glow discharge. The sputtering power source 4 is -200 to -600 with respect to the ground potential as the reference potential.
A negative DC voltage of (V) is applied to the target 2.

The gas introducing means 5 is for introducing a gas for sputtering discharge such as a rare gas, and is arranged so as to uniformly supply the gas directly above the target 2.

The ionization mechanism 6 is provided between the target 2 and the substrate 7
Ionization space set in the flight path of sputtered particles to space
In 606, a mechanism for ionizing the sputtered particles by colliding thermionic electrons emitted from the hot cathode with the sputtered particles and the particles of the gas for sputtering discharge is adopted. Specifically, some sputtered particles are ionized by thermionic electrons emitted from the hot cathode colliding with the sputtered particles. Also,
Other sputtered particles are ionized by thermionic electrons colliding with the gas particles for the sputtering discharge, and the excited species or ions of the generated gas for the sputtering discharge colliding with the sputtered particles. Thus, ionization occurs mainly by two mechanisms.

FIG. 2 is a structural diagram of an ionization mechanism 6 that can be used in the present invention. Specifically, ionization mechanism 6
, A current is supplied from a DC power supply 604 to a filament 601 connected in series, and the filament 601 is heated to emit thermoelectrons. Grid 60
Reference numeral 2 denotes a mesh structure. When a positive voltage is applied from the DC power supply 605, thermions emitted from the filament 601 are accelerated toward the grid 602. The accelerated thermoelectrons are not immediately captured by the grid 602,
It passes through the grid 602 to reach the ionization space 606 which is the trajectory of the sputtered particles. Here, the particles collide with the sputter particles and the gas particles for the sputtering discharge, and ionize or excite the sputter particles and the gas particles for the sputtering discharge. The filament 601
A material having a large thermionic emission coefficient, such as ReW, W, etc., is adopted as the material of the grid 602. The grid 602 has a mesh structure having a wire diameter of 1 mm and a pitch of about 3 mm. Also, filament 601
Is at the same potential as the casing 603,
Is normally grounded, but a negative DC voltage is applied by a DC power supply 607 to prevent diffusion of electrons.
The casing 603 may be configured to be held at the ground potential, which is the reference potential.

The substrate holder 8 is installed in the chamber 1 so that the substrate 7 can be held in parallel with the target 2. An insulator 17 is interposed between the base holder 8 and the base 7, and the lead-in electrode 10 is preferably mounted parallel to the surface of the base 7.

The lead-in electrode 10 is connected to a first voltage applying means constituted by a function synthesizer 11 as a signal generator and a power amplifier 12. By this voltage applying means, a rectangular wave voltage having a negative polarity and periodically fluctuating with respect to the ground potential as the reference potential is applied to the lead-in electrode 10.

Reference numeral 23 denotes the distribution of the electric field 9 at the end of the base 7
7 is an auxiliary electrode provided to make it the same as the vicinity of the center of 7. The same voltage as the voltage applied to the pull-in electrode 10 from the function synthesizer 21 and the power amplifier 22 as the second voltage applying means is provided. Is applied. The voltage applied to the auxiliary electrode 23 may be a negative DC voltage, and the function of the function synthesizer 21 and the power amplifier 22
Alternatively, a configuration using a DC power supply may be used instead.

FIG. 3 shows an example of a bias voltage applied to the lead-in electrode 10 and the auxiliary electrode 23.

In a predetermined cycle, the bias voltage is 0 or a negative minimum voltage (a voltage having a minimum amplitude with respect to a reference potential) V1 and a negative maximum voltage (a maximum amplitude with respect to a reference potential). ) V2.

With this bias voltage, the substrate surface
An electric field 9 is formed in a direction perpendicular to 7, and ionized sputtered particles are accelerated along the electric field 9 (perpendicular to the front surface of the substrate 7) and reach the substrate 7.

It should be noted that the function synthesizers 11 and 21 and the power amplifier 1 are connected to the pull-in electrode 10 and the auxiliary electrode 23, respectively.
Arbitrary waveforms and voltages can be applied by 2 and 22.

Next, the procedure of the film forming method according to the present embodiment of the present invention will be described.

The substrate 7 is set on the substrate holder 8 and the inside of the sputtering chamber is evacuated to about 10 ⁻⁶ Pa by the combined exhaust system 14.

Next, the ionization mechanism 6 is operated. That is, the DC power supply 607 is operated and set to an arbitrary value, the filament DC power supply 604 is operated to energize and heat the filament 601, and +10 V is applied to the grid 602 by the grid DC power supply 605.
Apply a positive DC voltage of about + 200V to the ionization space 60
6. Thermions are emitted.

Although the conditions vary depending on the film forming speed of sputtering, the value of the current (emission) flowing into the grid 602 is desirably set to 5 A or more during the film forming.

Next, a gas for sputtering discharge, such as Ar gas, is introduced by the gas introduction means 5, and the inside of the chamber 1 is maintained at about 0.2 to 2.0 Pa by controlling the exhaust speed controller of the combined exhaust system 14, The sputtering power supply 4 is operated to generate a sputtering discharge and start sputtering. At the same time, the signal generators 11 and 21 and the power amplifiers 12 and 22 are operated, and a voltage that periodically changes to zero or negative with respect to the ground potential is applied to the lead-in electrode 10 and the auxiliary electrode 23, and the substrate surface A drawing electric field 9 is formed in a direction perpendicular to 7.

At this time, the voltage applied to the pull-in electrode 10 and the auxiliary electrode 23 uses, for example, a rectangular wave as shown in FIG. 3 as described above, and the negative minimum voltage V1 close to the rectangular wave reference voltage 0V.
In this case, the potential is made slightly more positive than the floating potential so that electrons can be incident. Specifically, the value of the negative minimum voltage V1 is set to 0V
It is preferable to select from a range of from −10 V to −10 V. The floating potential is
Generally, an electrically insulated substrate placed in plasma means a potential of the substrate generated by the plasma, and in this embodiment, is generated in the substrate 7 when no voltage is applied to the lead-in electrode 10 and the auxiliary electrode 23. It is a potential.

The negative maximum voltage V2 of the rectangular wave is desirably set to a value selected from the range of -10V to -100V in order to prevent the effect of the reverse sputtering from being caused and the film forming speed from being remarkably reduced.

The frequency is set to 100 KHz so that ions can be efficiently incident while preventing charge-up of the substrate.
In addition, the duty of the waveform is 1 to 50 or more, that is, 0 V or the minimum negative voltage V1 is applied with respect to the time when the maximum negative voltage V2 is applied with reference to the reference potential (0 V). It is desirable to set the time ratio to be 1/50 or less.

As described above, the voltage applied to the auxiliary electrode 23 may be a negative DC voltage. Next, after pre-sputtering is performed for several minutes, the base shutter 13 is opened to start film formation. The particles sputtered by the sputtering discharge form an ionization space.
It is ionized at 606, flies toward the substrate 7, is accelerated by the drawing electric field 9 on the substrate surface, is drawn perpendicular to the substrate 7, and is efficiently deposited on the bottom surface of the groove formed in the substrate 7.

After the film is formed to a predetermined thickness, the shutter
Close 13 and stop the signal generators 11, 21, power amplifiers 12, 22, sputtering power supply 4, and gas introduction means 5,
Next, the filament power supply 604, grid power supply 605, and floating power supply 607 of the ionization mechanism 6 are stopped. Finally, a gate valve (not shown) is closed to allow the chamber 1 to leak, and the base 7 is removed from the base holder 8.

The ionization mechanism 6 extremely dislikes the deposition of sputtered particles on the filament 601. Because
This is because when a film is deposited on the filament, the resistance value changes and the filament is easily broken. Therefore, it is desirable to always operate the filament power supply 604 while the sputtering power supply 4 is operating.

FIG. 4 shows another embodiment of the present invention. The size of the lead-in electrode 10 is larger than that of the film-forming substrate 7. For example, when the film formation substrate 7 is a disk, the lead-in electrode 10 is formed of a disk having a diameter larger than the diameter of the substrate. The electric field formed by the extending portion 30 of the pull-in electrode 10 extending around the base 7 causes the base
The electric field is also perpendicular to the surface of the substrate 7 at the end of the surface of the substrate 7, and the electric field distribution is uniform over the entire surface of the substrate 7.

The shape of the lead-in electrode 10 is preferably circular,
In this case, the diameter of the lead-in electrode 10 is preferably set to be at least twice the diameter of the surface of the base 7. When the base 7 is polygonal, it is more preferable to use a circular lead-in electrode having a diameter twice or more the longest diagonal line or a polygonal lead-in electrode having a diagonal line twice or more.

In this way, a film having the same bottom coverage ratio as the central portion can be formed even at the end of the base 7.

In this embodiment described above, sputtering is used as an evaporating means for evaporating a substance as a raw material of a deposited film, but the method of generating particles (film forming method) is electron beam evaporation, resistance heating evaporation. Various methods such as a deposition method can be adopted, and various substances can be used as the evaporation material as a raw material of the deposited film regardless of a metal, an alloy, or a compound.

Further, in the present embodiment, as a mechanism for ionizing the evaporating particles, a mechanism is employed in which the evaporating particles and the particles of the discharge gas are ionized by colliding thermal electrons with the particles. Various ionization mechanisms for ionizing evaporated particles between an evaporation source and a substrate, such as a laser assisted ionization method and a high frequency coil plasma assisted ionization method, can be used.

[0048]

EXAMPLES (Example 1) Ionized sputtering was performed under the following conditions.・ Target dimensions: 76.2 mm in diameter ・ Draw-in electrode dimensions: 76.2 mm in diameter ・ Auxiliary electrode plane dimensions (base surface dimensions): 86.2 mm inside diameter, 9 outside diameter
6.2 mm-Gap between the drop-in electrode and auxiliary electrode: 5 mm-Target material: Al (aluminum)-Power input to the target: 500 W-Base size: 76.2 mm-Pressure in the sputtering chamber: 1.3 Pa-Discharge Gas type: Ar (argon)-Discharge gas flow rate: 200 sccm-Grid voltage of ionization mechanism: 50 V-Grid current of ionization mechanism: 20 A (value during film formation)-Floating power supply voltage of ionization mechanism: 0 V-Drop-in electrode voltage ： Minimum value 0V, Maximum value -30V ・ Retraction electrode voltage frequency: 500KHz ・ Retraction electrode voltage duty: 1: 100 ・ Auxiliary electrode voltage frequency: 500KHz ・ Auxiliary electrode voltage duty: 1: 100

FIG. 5 shows a sample formed by changing the minimum value V1 and the maximum value V2 of the voltage applied to the auxiliary electrode under the above conditions and forming a film on a sample substrate having a bottom width of 0.25 μm and an aspect ratio of 4. 3 mm from the center of the base and the end of the base
It is the figure which showed the value which measured the bottom coverage rate of the position shifted | deviated to the center side. For comparison, FIG. 5 also shows the bottom coverage ratio measured by forming a film with the auxiliary electrode set to the ground potential and the floating potential under the above conditions and preparing a sample.

As shown in FIG. 5, according to the present embodiment, it can be seen that the bottom coverage ratio at the end of the base is greatly improved.

For example, the bottom coverage ratio at a position shifted by 3 mm from the end of the base is 8% when the auxiliary electrode is at the ground potential and 20% when the auxiliary electrode is at the floating potential, but is applied to the auxiliary electrode. When the minimum value V1 and the maximum value V2 of the voltage are set to 0 V to -10 V and -60 V, respectively, a bottom coverage rate of about 40%, which is the same value as that of the central portion of the base, is obtained.

This result means that the effective use area of the substrate is improved, and indicates that it is extremely effective in manufacturing a disk or the like by using the next-generation DRUM and the domain wall displacement type magneto-optics.

(Example 2) A plurality of sample substrates were prepared by forming grooves having a bottom width of 0.5 µm and an aspect ratio of 4 on the surface of an Al substrate by reactive etching.

According to Example 1, SiO 2 was used as the target.
_2, using an RF power source as a sputtering power source SiO _2,
By changing the maximum value and the minimum value of the voltage applied to the auxiliary electrode, a silicon oxide film was formed on the Al substrate having the groove by ionization sputtering.

Further, according to the first embodiment, A
Using l, changing the maximum value and the minimum value of the voltage applied to the auxiliary electrode, the silicon oxide film was formed.
An Al film was formed on an Al substrate by ionization sputtering.

The thicknesses of the silicon oxide film and the Al film of each of the thus obtained samples were 10
0 nm and 300 nm.

For each sample, the center of the Al substrate and the Al
At a position shifted by 3 mm from the edge of the substrate, the dielectric strength between the underlying Al and the upper Al in the bottom portion was measured.

FIG. 6 shows the dielectric strength. FIG. 6 also shows, for comparison, the withstand voltage when the auxiliary electrode is set to the ground potential and the floating potential under the above conditions.

As shown in FIG. 6, according to this embodiment, the withstand voltage at the end of the substrate is greatly improved. For example, a DC voltage of −60 V or a minimum voltage V1 of a negative voltage is applied to the auxiliary electrode.
When 0 to -10 V and a maximum voltage of -60 V are applied, a withstand voltage of about 13 V, which is the same value as the central part of the substrate, is obtained.

(Example 3) Ionized sputtering was carried out under the following conditions using the above-described apparatus of FIG.・ Target size: 76.2 mm in diameter ・ Material of target 2: Al (aluminum) ・ Power applied to target 2: 500 W ・ Pressure in sputtering chamber: 1.3 Pa ・ Base size: 76.2 mm in diameter ・ Discharge gas type: argon ・ Discharge Gas flow rate for use: 200 sccm ・ Grid voltage of ionization mechanism: 50 V ・ Grid current of ionization mechanism: 20 A (value during film formation) ・ Floating power supply voltage of ionization mechanism: 0 V ・ Drawing electrode shape: circular ・ Drawing electrode voltage: minimum value 0V, maximum value -60V ・ Receiving electrode voltage frequency: 500KHz ・ Receiving electrode voltage duty: 1: 100

FIG. 7 shows a sample having a bottom width of 0.25 μm and an aspect ratio of 4 by changing the shape (size) of the drawn electrode under the above conditions to change the ratio of the diameter of the drawn electrode to the diameter of the base. FIG. 6 is a diagram showing values obtained by measuring a bottom coverage ratio at a position shifted by 3 mm from the center of the base and the end of the base after forming the film.

As shown in FIG. 7, according to this embodiment, the bottom coverage ratio at the end of the base is greatly improved. For example, looking at the bottom coverage ratio at a position shifted by 3 mm from the end of the base, the diameter of the lead-in electrode is determined by the diameter of the base.
In the case where it is twice or more, a value of about 40%, which is equivalent to the bottom coverage ratio at the center of the base, is obtained.

(Example 4) SiO ₂ and Al as targets
An RF power source was prepared as a sputtering power source for SiO ₂ . In addition, the bottom width is reduced to 0 by reactive etching.
A plurality of sample substrates having grooves of 5 μm and an aspect ratio of 4 formed on the surface of the Al substrate were prepared.

Following Example 3, the ratio of the diameter of the drawn-in electrode to the diameter of the base was changed by changing the diameter of the circular drawn-in electrode, and ionization sputtering was performed in the order of SiO ₂ and Al to prepare a sample. did.

The thickness of the portion other than the groove was 100 nm for the silicon oxide film and 300 nm for the Al film.

FIG. 8 shows, for each sample, the center of the Al substrate,
In addition, at the position shifted from the edge of the Al substrate toward the center by 3 mm, the measured values of the dielectric strength between the underlying Al and the upper Al in the bottom portion are shown.

As shown in FIG. 8, according to the present embodiment, the withstand voltage at the end of the base is greatly improved. For example, looking at the withstand voltage at a position shifted by 3 mm from the end of the base, when the diameter of the lead-in electrode is set to be at least twice the diameter of the base or the longest diagonal line, the withstand voltage is equivalent to the withstand voltage of the center of the base. 13
A value of about V is obtained.

FIG. 9 shows a method of calculating the bottom coverage ratio. The film 100 deposited on the groove upper portion 103 of the base 7
The thickness of t _A, the thickness of the membrane 102 deposited on-groove bottom 104 is taken as t _B, step coverage is 100 × t
Represented by _B / t _A. That is, it is a percentage of the deposited film thickness of the groove bottom portion 104 with respect to the deposited film thickness of the groove upper portion 103.

For reference, FIG. 10 shows a cross-sectional shape of a film deposited by conventional sputtering. It can be seen that the bottom coverage ratio is poor in the conventional sputtering.

[0070]

As described above, according to the present invention, the ionized particles are subjected to the bottom coverage ratio with respect to the grooves having a high aspect ratio (including continuous concave portions and independent concave portions such as openings). A good film can be formed. Also, a good deposited film equivalent to that near the center of the substrate can be formed at the end of the substrate.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a configuration of an ionization film forming apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view showing an example of an ionization mechanism used in the present invention.

FIG. 3 is a diagram showing an example of a waveform of a voltage applied to a lead-in electrode and an auxiliary electrode used in the present invention.

FIG. 4 is a schematic sectional view showing a configuration of a film forming apparatus according to another embodiment of the present invention.

FIG. 5 is a diagram illustrating a relationship between a minimum / maximum voltage applied to an auxiliary electrode and a bottom coverage ratio according to an embodiment of the present invention.

FIG. 6 is a diagram showing a relationship between a minimum / maximum voltage applied to an auxiliary electrode and a withstand voltage according to one embodiment of the present invention.

FIG. 7 is a diagram showing the relationship between the size ratio between the base and the lead-in electrode and the bottom coverage ratio according to one embodiment of the present invention.

FIG. 8 is a diagram showing the relationship between the size ratio of the base and the lead-in electrode and the withstand voltage according to one embodiment of the present invention.

FIG. 9 is a schematic diagram for explaining a method of measuring a bottom coverage ratio.

FIG. 10 is a schematic cross-sectional view showing the shape of a film deposited by conventional sputtering.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Sputtering chamber 2 Target 3 Magnet mechanism 4 Sputtering power supply 5 Gas introduction means 6 Ionization mechanism 7 Substrate 8 Substrate holder 9 Attraction electric field 10 Intraction electrode 11, 21 Signal generator 12, 22 Power amplifier 13 Substrate shutter 14 Exhaust system 23 Auxiliary electrode 30 601 filament 602 grid 603 case 604 DC power supply for filament 605 DC power supply for grid 606 Ionization space 607 DC power supply for floating

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Masahiro Kanai 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 4K029 BA03 BD01 BD12 CA03 DD04 EA09

Claims (12)

[Claims] 1. A film forming method in which ionized particles are made incident on a substrate to form a deposited film, wherein a lead-in electrode is provided on the back side of the substrate, an auxiliary electrode is provided around the base, and a ground potential is provided to the lead-in electrode. A voltage that periodically changes negative polarity is applied to the auxiliary electrode, and a voltage that periodically changes negatively or a DC voltage that is negative with respect to the ground potential is applied to the auxiliary electrode. A film forming method characterized in that a film is formed while performing film formation. 2. The film forming method according to claim 1, wherein the voltage applied to the pull-in electrode and the auxiliary electrode ranges from 0V to -100V. 3. The film forming method according to claim 1, wherein the periodically changing voltage applied to the pull-in electrode and the auxiliary electrode changes periodically at 100 KHz or more. 4. The periodically changing voltage applied to the pull-in electrode and the auxiliary electrode is a rectangular wave, and a negative minimum voltage or a ground potential with respect to a time during which a negative maximum voltage is applied is applied. 2. The film forming method according to claim 1, wherein the ratio of the time periods is 1/50 or less. 5. The film forming method according to claim 1, further comprising an ionization mechanism for irradiating the particles with thermionic electrons. 6. A film forming method for forming a deposited film by irradiating ionized particles to a substrate, comprising: a lead-in electrode provided on the back surface of the substrate; an auxiliary electrode provided around the substrate; First voltage applying means for applying a periodically changing voltage of negative polarity with respect to the ground potential to the pull-in electrode in the film, and applying the same ground potential to the auxiliary electrode as the pull-in electrode during film formation. And a second voltage applying means for applying a periodically changing voltage of a negative polarity or a DC voltage of a negative polarity. 7. A film forming method in which ionized particles are incident on a substrate to form a deposited film, wherein a drawing electrode having a portion extending around the base is provided on the back side of the base, and the drawing electrode is provided on the drawing electrode. A film formation method, wherein a film is formed while applying a voltage having a negative polarity that periodically changes with respect to a ground potential. 8. The film forming method according to claim 7, wherein a voltage applied to the pull-in electrode is 0 V to −100 V. 9. The film forming method according to claim 7, wherein the voltage applied to the pull-in electrode periodically changes at a frequency of 100 KHz or more. 10. The voltage applied to the pull-in electrode is a rectangular wave, and a ratio of a time during which a negative minimum voltage or a ground potential is applied to a time during which a negative maximum voltage is applied is 1/50. 8. The film forming method according to claim 7, wherein: 11. The film forming method according to claim 7, further comprising an ionization mechanism for irradiating the particles by applying thermionic electrons. 12. A film forming method for forming a deposited film by irradiating ionized particles to a substrate, wherein a lead-in electrode having a portion provided on the back side of the substrate and extending around the substrate is provided. And a voltage applying means for applying to the lead-in electrode a voltage having a negative polarity and periodically changing with respect to a ground potential.