TW588425B - Device and system for test sample treatment - Google Patents

Abstract

This invention provides a vacuum treatment device and a vacuum treatment system, which can increase function accuracy of treatment results of a test sample, predicted from a monitoring value of treatment status of the test sample and thus increase product yield through increasing speculation accuracy. The device and system for test sample treatment are equipped with a function for monitoring treatment parameters of the test sample, a function for predicting treatment characteristics of the test sample from the monitored treatment status, a function for communicating with a measurement device for measuring the treatment status of the test sample after treatment, and a function for changing the measurement conditions of the measurement device according to the physical characteristics of the test sample predicted from the information obtained from the monitoring function.

Description

588425 A7 __B7 V. Description of the invention (j (the technical field to which the present invention belongs) (please read the notes on the back before filling out this page) The present invention relates to a sample processing device and a sample processing system, and in particular to a suitable in the process under the state miniaturized gradually progress of the processing procedure of the sample processing apparatus and sample processing system (conventional technique) the vacuum processing apparatus is known, for example etching gas is introduced into the vacuum processing chamber, generating under reduced pressure plasma discharge, ion or particle radiation so that the plasma generated in the reaction is generated in the wafer surface as the object to be processed and the etching apparatus. economic intellectual property Office employee consumer cooperative printed dry etching process so device, according to the production conditions (gas flow rate, gas pressure, input power, etching time, etc.) a called trick (Recipe) to etched above the tricks in a specific manufacturing process (the same process) semiconductor device often held in a constant. in addition, there will be an above-described process into several steps, and for each More case manufacturing conditions sudden change of manufacturing conditions in the semiconductor manufacturing process, when the dry etching apparatus for processing a procedure, as described above, at each wafer processing, will be referred tips (Recipe) are located into each must perform wafer processing. further, in addition to monitoring sample etching conditions and uranium engraved state, the extracted actual shape of the sample of like inspection apparatus, and the result is fed back to the sample processing device in the measurement. (the present invention Problems to be solved) In the recent gradual progress of the miniaturization of uranium, the wafer paper size of the paper is in accordance with the National Standard (CNS) A4 specification (2 reads 297)-4- Intellectual Property Bureau, Ministry of Economic Affairs Printed by the Employee Consumption Cooperative 588425 A7 B7 V. Description of the Invention (^ The reaction product with the etching gas will accumulate on the inner wall of the processing chamber, and an unnecessary gas called out gas is generated from the accumulation. Thus, in the process chamber, the force will be constantly changing environment. more and processing indoor environment will change due to temperature-related parts of the process chamber, parts of consumption varies. also, even Changes in the shape and size of the mask cover formed by the optical lithography process as a pre-process of etching, will bring a significant impact on the result of the etching. That is, even if the use of certain tips to an etching treatment, also because of various external disturbances and is difficult to obtain a certain performance. more and, means for sampling the measurement wafer was measured, the more the measurement points, the measurement accuracy becomes high but when improving the measurement accuracy, the Determination will spend a lot of time and gradually lead to a decrease in productivity. the present invention aims at providing a way to suppress the process conditions of the sample, such as a vacuum processing apparatus and a vacuum processing system, the influence caused by the change in plasma state. the present invention other object is to provide an attempt to improve the accuracy of the monitoring of the state of the sample processing Zhi to push function of processing the test results of the material, to improve the accuracy of the prediction, thereby increasing the yield of the vacuum processing apparatus of the article and the vacuum processing system. Other objects of the present invention is to provide a means for measuring side by the sample inspection, while improving the productivity of the vacuum processing apparatus and a vacuum processing system. (Means to solve the problem) -------- This paper size applies the Chinese National Standard (CNS) A4 specification (2) 0 > < 297 mm) (Please read the precautions on the back before filling this page)

-5- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 588425 A7 —B7 V. Description of the invention The invention is characterized by: a function of monitoring the processing parameters of the sample, and inferring the above sample from the monitored parameters the handling characteristics of the functions, and for determining a function of communication in the assay device processing state of the sample after the treatment, and changes the measurement of the measuring means of the physical characteristics of the information for that monitor the estimated the sample functional condition. Other features of the invention lies in having a function for monitoring the etch parameters, or in addition to monitoring the function state of the etching process, and having the communication means for measuring the etching in etching characteristics measuring device after the etching process, having the number of measurement points may be increased or decreased depending on the etching characteristics of the measuring apparatus by the etch parameters or the estimated sensing information. Other features of the judging system of the present invention having a reservoir having an etch parameters may be monitored, sensing information to infer the function of a determination result of the etching programs, databases, and data for determination of the, and more, can add a new additional decision rules measurement result. Other features of the present invention in that: the etching using the monitoring functions to monitor the state of an etching state, and the input to the determination system, the results from the determination, by the above-described communication device for indicating changes in the number of measurement points measured, accepts the measurement results will be accepted by the results reflected in the decision rules and databases, can be carried out while the wafer etching process, while automatically updating determination system. Embodiments of the present invention (embodiment of invention) described below. This paper suitable for China's national scale 'standard (CNS) A4 size (210X 297 male Chu) (Please read the notes and then fill in the back of this page)

-6-588425 A7 B7 V. Description of the invention (j Figure 1 is a block diagram showing the overall configuration of the first embodiment of the sample processing system of the present invention as a dry etching processing system. Figure 2 is a diagram showing the overall system function block diagram of a vacuum processing apparatus of the sample processing system 100 1 is composed of two of the plasma processing chamber 2a, 2b, vacuum transfer chamber 3, and Lock chamber 4 a, 4b formed. arranged around the vacuum transfer chamber 3 with an electrically plasma processing chamber 2a, 2b, pretreatment chamber 2c, 2d and Lock chamber 4a, 4b. disposed on the side of the vacuum processing apparatus Lock chamber 1, 4a, 4b having a transporting robot arm transport device 56, more and is buttressed the sample transport apparatus 5 is provided with a plurality of cassettes can be arranged cassette station 8 7. also, the transport device 5 in addition to the vacuum processing apparatus 1, while the communication function is provided and the measurement 9 and 1 1, the measuring apparatus 9 the measurement result is inputted to the control means 10, 10 via the communication line to the measurement result to the computer 50. the host computer 50 or any one of the computer 10 includes control means includes a control 212 has FIG apparatus shown the etching characteristics estimation function 11 and the square 0. predetermined adjustment function 12 and a portion of the plurality of function may be a computer device 9 measuring the balancing is adjusted according to the etching characteristics of an etching characteristic estimation function of the estimated 110 in the plasma processing chamber 2a, 2b in the treatment conditions of the wafer 32, and, receiving information etching characteristics estimation function 110, measuring and adjusting the control function 120 of the measuring apparatus 9 measurement object points increases or decreases. the vacuum processing apparatus 100 system in order to achieve etching characteristics estimation function 110 Either the control device 10, the measurement device 9 or the host computer 50 has an etching parameter control and monitoring function 1 1 1, an etching state monitoring sensor 1 1 2, an etching characteristic storage database 1 1 3, Etching state determination device 140 〇 This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling out this page}-Ordered by the Consumer Affairs Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to print 588425 A7 _B7 V. Description of the invention (j (Please read the precautions on the back before filling this page) Sensor for monitoring the etching condition 1 1 2 Consider using a shape measurement function SEM length measuring apparatus capable of measuring the optical device CD, the probe inspection (electrical characteristic test) apparatus, an etching state determining means 114, wherein the storage system has determined that the etching parameters are monitored in accordance with the sensed information to speculate function determination program and database of the results of etching for the determination of the data, and may further add a new measurement result additional decision rules. configure the functional configuration of the embodiment, for example, by etching the vacuum processing apparatus 1 and the parameter control The monitor function 1 1 1 monitors the etching state and inputs it to the judgment system of the etching state judging device 1 1 4 of the host computer 50. Determination of the host computer 5〇 12〇 adjustment may be based on the determination result of the processing indicates a change in the measurement condition of the wafer surface in the apparatus. The vacuum processing apparatus 1 accepts the measurement result of determination to add a new rule, changing the measurement condition for a measurement device 9 indicates, for example, increase or decrease the number of measurement points, and the result is reflected to the received decision rules and database, whereby crystallization circle 32 of the etch process. On the other hand, the host computer 50 may automatically update determination system according to the condition set beforehand. Ci-chi Economic Co-op Property Office employee 3 is printed as the vacuum processing apparatus is an etching apparatus in the sample processing system of the present invention employed in the description of the profile of FIG. The vacuum processing apparatus is an electromagnetic wave radiated from the antenna, and by interaction with the magnetic field, generating a plasma etching apparatus of an example embodiment of the ECR plasma in the vacuum processing chamber 20. The aluminum antenna is disposed in the upper portion 22 of the vacuum processing chamber 20 via the dielectric window 21. In this case, the antenna 22 via the coaxial waveguide 23 and the integrator 24 is connected for generating a frequency of the high frequency power source WHF 450MHz wave 25. The dielectric window 21 provided between the vacuum processing chamber 20 and the antenna 22 allows the paper scale to be adapted to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8- 588425

V. Description of the Invention (J6 Intellectual Property Office employee Economic Co-op printed from high frequency power source 25 through the electromagnetic waves in the outer circumferential portion of the vacuum processing chamber 20 is wound to form a magnetic field within the vacuum processing chamber 20 of the field coil 26 (in this case two rings of line segment). the lower electrode is provided as a configuration of the wafer as the test sample 32 of the feed station 7. 2 in the dielectric antenna window 21 at the bottom within the vacuum processing chamber 20 22 treatment space 27 between the lower electrode and a plasma is generated in the lower electrode is connected for imparting plasma ion energy incident on the high frequency bias of the wafer 32 (bIAS) power supply 28, and the electrostatic 32 29. a high frequency bias wafer sorption frequency power source 28 is not particularly limited although the lower electrode 27 of the ESC power supply, but usually in the range of 200kHz to 20MHz. at this time, the frequency of high frequency bias power source 28 using 400kHz. in the lower part of the vacuum processing chamber is provided 2〇 connected to the exhaust port 3 of device 1 is 〇.3 supplying a process gas into the vacuum processing chamber 20 inside the gas supply apparatus provided with the dielectric body Most gas supply of window 21 Connected. Etch parameters used to implement the control and monitoring function 111 is used to monitor by the sensor group etch parameters. These are supplied from the monitored gas flow rate for a vacuum processing apparatus, gas pressure, input power, etc. the processing procedure (Progress) amount sensor group formed. the optical sensors are usually equipped with a standard dry etching apparatus, the illustration is omitted here. in addition, also provided with an etching process may be monitored state group of sensors. for example corresponding to become plasma generator lighting window portion between the vacuum processing chamber of the processing chamber 20 is provided for lighting the plasma light, and the lighting is connected via an optical fiber to the light windows, measured plasma The sensor of the light emission spectrum uses a light emission monitor 34 (〇ES: Opticual Emission Spectroscopy). In addition, other paper sizes are applicable to China National Standard (CNS) A4 specifications (21GX 297 mm) (Please read the back first Please note this page before filling in this page) -9-588425 A7 B7 V. Description of the invention () (Please read the notes on the back before filling this page) The sensor can also be used to analyze plasma particles Four types of mass analysis devices for mass (QMS: Quadrupole Mass Spectrometry). The luminous spectrum measured by these sensing groups are converted into electrical signals and input to the control device 10. In addition, the shape of the etching will be different for each The reason for the wafer change is that reaction products such as vaporized silicon will adhere to the inner wall of the vacuum processing chamber 20 and cause the state of the plasma to change. For example, when the reaction products attached to the inner wall are released again and adhere to the crystal When it is on a circle, the amount of thickening (hereinafter referred to as "CD gain") derived from the design of the width of the processing line becomes larger, and at the same time, the luminous intensity of the electric light is measured for the wavelength of light. That is, when the measured emission spectrum, can be measured corresponding to the change of the form of the reaction product increases. Although the case of changing the gas composition, or because of material etched, however, it may beforehand measured relationship of the emission spectrum of the plasma gain and CD, and the data recorded in the recording device holding the control device 10. Ministry of Economic Affairs Chi Chi Property Office employees consumer cooperatives printing operation of the vacuum processing device connected system of the present invention is illustrated. The wafer subjected to the etching processing in the vacuum processing apparatus 1 is transferred from the Lock chamber 4a or 4b by a transfer robot arm 6 to a process for measuring the length of a scanning electron microscope (hereinafter referred to as a "length measurement SEM"). Line length measuring device 9. In the length measuring device 9, the CD gain is measured by a length measurement SEM. This measurement is performed for each wafer or a certain number of wafers as necessary, and the data is A memory device stored in the control device 10. In addition, the CD gain also has a set allowable plutonium, and the initial etching conditions, that is, the uranium etching processing conditions at the time of starting batch processing are set so that the CD gain is set at the Zhi allowable here, when continuously processing a plurality of wafers, if the gain exceeds the allowable CD Zhi, the present paper will ^^ degree of Chinese national standard (square ^) 4 Si standard (210 > < 297 mm). - -10- 588425 A7 _B7 V. Description of the invention (j The data signal is sent to the control device 10, and the etching conditions are automatically adjusted by the control device 10 so that the CD gain is within the allowable range, and the control device 10 is used to change. Adjustment in vacuum processing unit Etching processing conditions in the plasma processing chamber 2a or 2b. The control device 10 controls a feedback (FB) control system or a feedforward (FF) control system. The control device 10 is also provided with a process quantity equivalent to a process for the moment characteristic stored contact portion 113 of the database, and the database to be stored in combination with the know-how or production management information (batch number, 2D wafer etc.). this will be used to monitor the etching parameter sensor group by a monitoring the etching process state sensor group obtained its information content of the list shown in table 1. (please read the notes on the back of this page and then fill in) Ministry of economic Affairs intellectual property Office employees consumer cooperatives printed in this paper Xiao scale with China National Standard Car (CNS) A4 specification (210X297 mm) -11-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 588425 A7 ___ B7 V. Description of the invention (^ Table 1 $ Eclipse used in monitors! Number sensing uranium content information category name engraved parameters (111) engraved uranium processing pressure will affect the shape of the etched high-frequency power distribution dielectric loss tangent (tan δ) will affect the distribution of the electric field, will Movies Distribution of etching characteristics The high-frequency power supply Vpp voltage reflects the state of the plasma. When changing, consider the changes in the etching characteristics. The electrode temperature will affect the shape productivity due to the temperature. The cooling gas pressure and pressure will affect the cooling effect of the wafer. specific elements etching residual film thickness sensing information (112) on detection of the accumulation of the wall of the plasma luminescence detection process because the change will affect the shape of the residual film thickness would affect in an etching apparatus for a wafer etching process, and the wafer transported to the processed measurement device 9. Further, the control apparatus from the etching apparatus 1 of the first square measuring device 9 requests for the measurement of the wafer has been processed, the measurement and control device 9 to the result of the etching apparatus 1 ° 1 billion from the control apparatus i measuring device in the square analyzes the measurement result, and sends it to the production line 々, " '~ ^^^ " ^ level (square ^) six 4 size (210 \ 297 mm) (read Notes on the back and then fill This page)

-12- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 588425 A7 __B7 V. The host computer on the description of the invention (1. The host computer performs the set processing based on the measurement result and instructs to change the measurement conditions of the measurement device 9. on the other hand, to complete the determination of the wafer is conveyed to the next process. examples of the measurement conditions are changed, for example, FIG. 4 (a) determining the number of lines in an example of a point of increased wafer table surface is apparent measurement point the more , are located within a crystal plane etching characteristics, such as poor cooling temperature becomes good, and, (b) of the machining shape based on measurement has a wafer 4, sucked on any of the above Determination of the position of the measurement points is changed from a point to multi-point, multi-point known from the above according to the determined gain state of the CD becomes good. so as to measure the wafer 9 to the measuring apparatus, the measurement points within the wafer surface or The more measurement positions related to the processed shape, the higher the measurement accuracy. However, when the measurement accuracy is increased, it will take a lot of time during the measurement, resulting in a decrease in productivity. Here, in the beginning, After the moment, as far as possible to lower the measurement accuracy processing productivity can be improved, and monitoring changes in the best environment of the processing chamber and the like, suitably in response to the required measurement accuracy is improved. [Example 1] Referring to FIG. 5, and the control flow FIG amount characteristic component library 02 6 116 (etching characteristics to store a database portion 113) of the present invention will be explained more specific examples (Example 1). in general, in many (P〇 ly · Si) etching, can be said 〇2 component content will affect the shape of the etching. in this case, the amount of ingredients in advance 〇2 be repositories of shape relationship with. in the etching process of the wafer (502), The light emission monitor OES is used to investigate the plasma luminescence (5 04), and to determine the change in the amount of 02 components. The paper size is applicable to the Chinese National Standard (CNS) A4 standard (210X 297 mm) "- 13- (please read the back of the precautions to fill out this page)

588425 A7 ___B7

Fifth, the invention is described in (A (Read Notes on the back and then fill the page) (506). Whereby the etching shape can be predicted complete situation. Further, the amount of the component 6 of the shape shown 〇2 referring to FIG. Relational database] 丨 6 (508), and determine whether the shape is out of specification from the amount of light emitted during etching (510). For wafers that are considered to be out of specification, request the measuring device 9 to measure the shape (512). Furthermore, even if the wafer is not in specification, but also by the sampling inspection is performed as normal check processing device (514). the information on each wafer and the measuring device 9, the in response desired may be utilized in the next process. 〇2 ingredient amount ingredient amount 〇2 characteristic database 116 indicates the relative Zhi is directed to the standard state. 9, the measurement results by the measuring means to receive the communication (516, 518) Furthermore, the measurement result is normal is determined (520) in the component database 116 in FIG amount characteristic of 〇2 6, the bold frame in the allowable range. if the abnormality is, in the embodiment, it is the main computer for report (522), a command from the host computer 50 cases The processing means and the stoppage embodiment Qing Li (Cleaning) square economic Intellectual Property Office workers consumer cooperative printing and 8, the measurement result in the measuring device 9, whether normal or abnormal, or even when there is a request from the etching apparatus 1 usually the sampling results are all reflected in the database of FIG. 6 116 (524). that is, by the program to update the decision result of the decision rules based on the measurement or database, may increase the etching parameters from the monitored sense estimation accuracy of measurement information to the function of the etching result. Accordingly, the program can improve the prediction accuracy of the determination, and further, the yield of products can be improved. further, by setting the etching conditions as the measurement accuracy can be improved wafer processing corresponding In this embodiment, although the etching device has the above-mentioned database and the pre-paper size is applicable to the Chinese National Standard (CNS) specifications (210X29 * 7 mm) ~ -14- 588425 A7 B7 V. Description of the invention () 2 function, but this function can also be implemented in the host computer side is also possible to predict or functionality and integration into databases and sensors, and to link prison (Embodiment 2) The second embodiment of the present invention will be described with reference to the control flow of FIG. 7 and a part of the dielectric forward characteristics database 11 8 (etching characteristics storage database 113) of FIG. 8. General for, UHF plasma etching apparatus, wherein the power UHF Zhi affect the uniformity of etching (in the wafer plane distribution characteristic). Although typically power controlled to a certain Zhi, but not completely output for generating plasma, a portion of a dielectric reflector or the like because power is not incident processing chamber, for indicating the efficiency of the index database is often used in FIG. 8 as shown in the positive connection (tan δ). Although typically about tan 5 is constant, but the Zhi also because of changes in device status changes. Thus, the wafer in the etching process, can be predicted by measuring tan 5 etching uniformity. Measuring (704) a dielectric i.e., in the etching process of the wafer (702), the high-frequency power source connected to the positive (tan 5) of. Whereby the case can be predicted completion of the etching shape. As for the relationship between tan 5 and uniformity, can be connected to a positive reference database dielectric characteristic of FIG. 8 118 (7〇6), dielectric etch from the positive contact to determine the uniformity of the tan. 6 is outside the allowable range (7〇8 ). In FIG. 8 the positive dielectric characteristic contact database Π 8, the bold frame is allowable range. Needle wafer that out of the allowable range, the distribution of which is measured (710) requesting measurement device. Also, if not in size, but also by wafer-scale pumping this paper applies China National Standard (CNS) A4 size (297 mm 2I〇X) (Please read the notes on the back of this page and then fill in) economic order Printed by the Ministry of Intellectual Property Bureau Employee Consumption Cooperative -15- Printed by the Ministry of Economic Affairs Intellectual Property Bureau Employee Consumption Cooperative 588425 A7 __B7_ V. Description of the Invention (& Sample inspection to check normal processing parts (712). Distribution conditions are measured in addition to the usual outside the measurement point, but also by increasing the measurement position in the wafer plane be implemented. the control device 10 is accepted measurement result (714~716) to determine the measurement result is normal (718), again with reference to FIG. 8 dielectric positive contact characteristic database 118 to determine whether there is uniformity. if abnormal, in this embodiment, the main computer for reporting (720), from the host computer, for example, order the handling unit shutdown, embodiment Qing Li (Cleaning) of square and apparatus, the measurement results of the measuring means 9 regardless of normal or abnormal isobutyl, or there is a request from the etching apparatus 1, then the result of the sampling will generally be reflected in all funding Other sample handling means (Effect of the Invention library, using precision (722) to improve the prediction of the present invention can of course be applied in the plasma CVD apparatus, sputtering apparatus, ashing (ashing) means, the ion implanting device or the like ) according to the present invention, may monitor the processing conditions of the sample and processing state, performs feedback control or feedforward control sample processing apparatus or sample measurement device for. That is, since the update determination program of decision rules and database based on the measurement results of the sample , can be improved from the monitoring Zhi like push function processing of the test specimen of the results of precision thereby, it is possible to improve the prediction accuracy of the determination program, but who can improve the yield of products. Moreover, since the set to the sample processing conditions in the corresponding measurement accuracy, thus improving productivity. this paper scales applicable Chinese national standard Falcon (CNS) A4 size (210X297 mm) (please read the back of the smell of the Notes then fill out this page)

-16- 588425 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A 7 B7 V. Description of the Invention (& Schematic Description: Figure 1 is a block diagram showing the overall structure of a sample processing system according to an embodiment of the present invention. FIG 2 is a functional block diagram of the embodiment of Example 1. FIG. 3 is a longitudinal sectional view of an etching apparatus of the embodiment of FIG. 1 of the employed. FIG. 4 is a modification of the embodiment of the wafer for the measurement condition of the embodiment of FIG. 1 Description of FIG. FIG. 5 is a control flowchart of a specific embodiment of the invention 1. FIG. 6 is a example of an embodiment of a repository in FIG. 2 specific control of the embodiment 7 of the present invention a flowchart of FIG. FIG. 8 is a repository Example 2 of the embodiment example of FIG. 1 primary table member ...... vacuum processing apparatus, a plasma processing chamber 2 ......, ...... vacuum transfer chamber 3, 5 ...... transport Device, 7 ... cali table, 9 ... measurement device, 10 ... control device, 1 1 ... communication function, 50 ... host computer, 1 1 0 …… Estimation of etching characteristics, 1 1 1 …… Etching parameter control and monitoring function, 1 1 2… Sensor for monitoring etching state, Π 3 … Etching property storage database, 1 1 4… Etching state judging device, 1 2 0… Measurement adjustment function. This paper size is applicable to Chinese National Standard (CNS) A4 specification (2) 0X297 mm j ( please read the back of the precautions to fill out this page)

-17-

Claims (1)

588425 A8 B8 C8 D8 6. Scope of patent application 1 1. A sample processing device comprising: a sensor that monitors the processing parameters of the sample, and estimates the processing characteristics of the processing characteristics of the above-mentioned § formula from the monitored parameters means and measuring means for processing condition of the sample after the measurement processing apparatus for communication, and to change the measuring and adjusting the measurement conditions of the measurement device of the apparatus according to the processing characteristics of the samples from the information for that monitor the estimated . Process sensors monitoring the process parameters of the sample, the sensor monitoring processing status of the sample, from the state of the process parameters and the monitored sample by processing said estimation of properties: Species sample processing apparatus, there is provided - 2 characteristics estimation apparatus, a device communication, and determining adjustments to change the measurement conditions of the measurement device of the process according to the characteristics of the monitoring parameters and process state estimation apparatus and a measuring apparatus for processing a state in which the above-described sample processing measured. 3. The scope of patented sample processing apparatus according to item 1 or the item 2, there are provided: monitor the etching process the sensor and the sample of the parameters relating to the monitoring of the sample etched state sensor device, from which the monitored etching characteristics of the parameters to estimate the etching characteristics of the sample of the estimation means, said sample apparatus for communication in a measuring apparatus for etching characteristics after the processing for the determination, and in accordance with the estimated by the etching parameters and said sensing information measuring etching characteristics to change the measurement conditions of the measurement device of the adjusting device. 4. The scope of patented sample processing apparatus of item 3, comprising: a resource library materials' which stores a determination program and determines the number of data to follow the etching parameters being monitored, sensing information to estimate the results of etching. 5 · If the sample processing device in item 4 of the scope of the patent application has the additional paper standard applicable to the national standard (CNS) A4 specification (〇X 297 mm) '-18-J.-(Please read the back Please fill in this page for the matters needing attention.) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives. 588425 A8 B8 C8 D8 6. Application for Patent Scope 2 The new measurement results can be added with a rule-based determination system. 6. The scope of patented sample processing apparatus according to item 1 or item 2, the above-mentioned measurement condition changing means of measurement refers to the number of measurement points is increased or decreased in the plane of the wafer. 7. Patent application range sample processing apparatus according to item 1 or item 2, the above-mentioned measuring means of changing the measurement condition refers to a measurement position at any measuring point is changed to a point or points. 8. - Species sample processing system, which is mainly a is provided with a sample processing device is connected to the via communication lines to each other, means, and the main computer of the sample processing system determines, comprising are: determination system having a database, which database is stored for determining processing said sample of the above sample processing apparatus of the result of decision rules and information, the determination system, based according to the processing result of the determination, changing the measurement condition of for the measurement device indicates, by the measuring means accepts the change after the measurement results of the measurement conditions and the measurement results produced by the determination rule to reflect and information. 9. The patent application range sample processing system, Paragraph 8, using the functions of monitoring the etching state is monitored contact engraved state in which the sample processing device, inputs the monitoring result to said determination system, the determination result from this, by the measurement result by the communication function is changed for the measurement device indicating the measurement conditions, receiving the measurement result, and the accepted reflected in the determination rules, and database, and while etching processing said sample, while automatically updates the determination system. This paper size applies Chinese National Standard (CNS) Α4 specification (210X297 mm) --------- 0 ^-(Please read the precautions on the back before filling this page), 1T I # Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau-19- 588425 A8 B8 C8 _ D8. 6. Patent application scope 3 10. If the sample processing system of item 8 or 9 of the patent application scope is applied, the measurement conditions of the above measuring device will be changed. It refers to the increase or decrease in the number of measurement points within the wafer surface. 11. The scope of patented sample processing system of item 8 or 9, the change of the measurement condition of the measurement device refers to a measurement position at any measuring point is changed to point or multipoint. It ---------- (Please read the notes on the back before filling out this page), 1T Printed by the China National Standards (CMS) A4 Specification (printed on paper standards) ! 2 0X297 mm) -20 -