TW588186B - Method and structure of low reflection liquid crystal display unit - Google Patents

Abstract

The method and structure of low reflection liquid crystal display unit are provided. The structure includes a semiconductor layer, a first metal layer, and a second metal layer. The method includes forming a semiconductor layer, forming an insulator layer on the semiconductor layer, forming a first metal layer on the insulator layer, forming a dielectric layer on the first metal layer, and forming a second metal layer on the dielectric layer. The first and second metal layers are above the semiconductor layer. The first and/or second metal layer is extended to cover part or the entirety of the semiconductor layer.

Description

588186 V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention relates to a liquid crystal display unit structure and a method for forming the same. 2. [Prior art]-Fig. 1 is a top view of a conventional liquid crystal display unit. It includes a poly-Si 1 icon layer 104, a first metal layer 108, and a second metal layer 112. It can be seen that in order to increase the aperture ratio, a part of the polycrystalline stone layer 104 is exposed. However, the reflectivity of polycrystalline stone 104 is very high, which leads to a decrease in display performance, such as a decrease in contrast. In addition, the exposed area of the polycrystalline silicon layer 104 is different, or the reflectivity of the polycrystalline silicon layer 104 is inconsistent due to the crystallization process, which causes the display to have a color unevenness (mura). Generally, the polycrystalline silicon layer reflection (black ma t r i X) is set to the side of the polycrystalline silicon color filter transistor. If the misalignment of the color mask is on the side of the thin-film transistor, a more probable method is to use a black matrix layer for masking. This black matrix can be used on the color side or thin-film transistor (thin nim color filter side). The black matrix must have a large area for each tolerance. If it is a process for making a black matrix, the method can solve the color matrix. Therefore, the system needs a liquid crystal display unit structure and the formation of polycrystalline silicon layer reflectivity, and the black path without a large area is also simple....

^ ΟΟΙδΟ 5. Description of the invention (2) 2. [Summary of the invention] method. ί 1: To mention, a kind of liquid crystal display unit structure and its formation method, large surface 浐 $: extension fish method can solve the problem of reflectivity of polycrystalline silicon layer, and a large area black matrix of Panyu, the process is relatively simple. The main aspect of c is to provide a liquid crystal display unit structure and a method for forming the liquid crystal display unit, which can solve the problem of the reflectivity of the polycrystalline silicon layer. pi% ί Another aspect of the invention is to provide a structure capable of solving the polycrystalline silicon layer reflectance: 45 terrestrial liquid crystal display units and a method for forming the same, without the need for a large-area black matrix, and the manufacturing process is relatively simple. The invention provides a method for forming a liquid crystal display unit structure. Mainly in the use of metal | extended to cover the original naked polycrystalline stone |. The forming method includes forming a semiconductor layer, forming an insulating layer (nSulator) on the semiconductor layer, forming a first metal layer on the insulating field, forming a dielectric layer (dielectric) on the first metal layer, and forming A second metal layer is on the dielectric layer. The first metal layer and the metal layer are all located above the semiconductor layer. And the first and / or the second metal layer is extended to cover part or all of the semiconductor layer. The 2 points of the semiconductor layer mentioned here refers to the percentage of the area of the semiconductor layer: more than 70%. The first metal layer includes a common line (common line) or a gate line (gate 9 hne), and the second metal layer includes a data line (data Une).

Page 6 588186

This -t: also provides a liquid crystal display cell structure formed by the above method. Π "a semiconductor layer, a first metal layer, and a second metal layer. Among them, the first metal layer and the second metal layer are located above the semiconductor layer. ^ The first and / or third metal I extends to cover A part or part of a semiconductor layer. The-part of a semiconductor layer herein refers to more than one hundred twenty seventy of the area of the semiconductor layer. The first metal layer includes a common line or a gate line, and the second metal The layer includes a data line. [Embodiment] The present invention provides a structure of a liquid crystal display unit and a method for forming the same. The main spirit is to use a metal layer to extend and cover the original bare polycrystalline silicon layer. The formation of a preferred embodiment of the present invention The schematic diagram of the method is shown in Fig. 2. First, a polycrystalline stone layer 104 is formed on the substrate 102 (step 20). An insulating layer 106 is formed on the polycrystalline silicon layer 104 (step 22). A first metal layer is formed. 208 on the insulating layer 106 (step 24). Next, a dielectric layer is formed on the first metal layer 208 (step 26). Finally, a second metal layer 212 is formed on the dielectric layer 110 (step 28). The first metal layer 208 and the second metal layer 2 1 2 are located above the polycrystalline silicon layer 104. In this preferred embodiment, the first metal layer 208 and the second metal layer 212 both extend to cover the entire polycrystalline silicon layer 104. The first metal layer 208 It may include a common line 21 4 or a gate line (not shown in FIG. 2), and this embodiment is a common line 2 1 4. The second metal layer 2 1 2 includes a data line 218.

Page 7 Description of the Invention (4) FIG. 3 is a schematic sectional view of the first embodiment of the present invention. The first metal layer 208 includes a common line 21 4 and extends to cover all of the polycrystalline silicon layer 04. The second metal layer 3 1 2 includes a body line 3 1 8 and only covers a part of the polycrystalline silicon layer! A part of the polycrystalline silicon layer 104 here refers to more than 70% of the area of the polycrystalline silicon layer 104. FIG. 4 is a schematic sectional view of a second embodiment of the present invention. The first metal layer 408 includes a gate line 416 and extends to cover all of the polycrystalline silicon layer 104. The second metal layer 3 1 2 only covers a part of the polycrystalline silicon layer 104. Here, a part of the polycrystalline silicon layer 104 refers to a percentage of the area of the polycrystalline silicon layer 104: more than seventy. FIG. 5 is a schematic sectional view of a third embodiment of the present invention. The first gold layer 508 includes a common line 514, and only covers one part of the polycrystalline silicon layer 104. The second metal layer 212 includes a data line 218, which extends to cover the portion. The term "part of the evening layer 104" refers to more than 70% of the area of the evening layer 104. Fig. 6 is a schematic cross-sectional view of a fourth embodiment of the present invention. The first one is 6 .08 contains an open electrode line 616 '@ only covers a part of the polycrystalline stone layer 104, a metal layer 212 is extended to cover all of the polycrystalline silicon layer 104. The seventh: the silicon layer A part of 104 is the percentage of the area of polycrystalline silicon layer 104.

Page 8 588186 V. Description of the invention (5) Fig. 7 is a schematic sectional view of a fifth embodiment of the present invention. This fifth embodiment is one of the preferred embodiments. The first metal layer 208 includes a common line ^, and the second metal layer 212 includes a data line 218. The first metal vocalist and the second metal layer 212 are all extended to cover the entire polycrystalline silicon layer. FIG. 8 is a schematic sectional view of a sixth embodiment of the present invention. This sixth embodiment is one of the preferred embodiments. The first metal layer 008 includes a polar wire ... a metal layer 808 and a second metal layer 212 both extend to cover the entire polycrystalline stone layer 104. Compared with Κ ΐ ΐ 发: ΐ: embodiment top view. In this embodiment and FIG. 1, the layers 2 08, 808 and the second metal layer 2 丨 2 all extend the exposed polycrystalline stone layer 104 (not shown in FIG. 9). For example, ϋ = add the black matrix area or process to solve ... Side effects The above description is not that the various changes and equality arrangements in the scope of the present invention are within the scope of the second and the protection. May application for patent protection in May. Page 9 588186 Brief description of the drawings 5. [Simplified description of the drawings] In order to explain the present invention, the drawings are attached and the following description is made. Similar numbers indicate similar components: Figure 1 is a top view of a conventional liquid crystal display unit; Figure 2 is a schematic sectional view of a preferred embodiment of the present invention; Figure 3 is a schematic sectional view of a first embodiment of the present invention; and Figure 4 is a Sectional schematic diagram of the second embodiment of the present invention; FIG. 5 is a schematic sectional diagram of the third embodiment of the present invention; FIG. 6 is a schematic sectional diagram of the fourth embodiment of the present invention;

Fig. 7 is a schematic sectional view of a fifth embodiment of the present invention; Fig. 8 is a schematic sectional view of a sixth embodiment of the present invention; and Fig. 9 is a plan view of a preferred embodiment of the present invention. Symbol description of the graphic elements 102 substrate 104 polycrystalline silicon layer I 0 6 insulating layer 108, 208, 408, 508, 608, 808 first metal layer II 0 dielectric layer

112, 212, 312 Second metal layer 1 1 4, 2 1 4, 5 1 4 Common line I 1 6, 4 1 6, 6 1 6, 8 1 6 Gate line II 8, 2 1 8, 3 1 8 Data line

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Claims (1)

588186 a repair, IE case number 91134281 supplement i liquid day display unit g six, patent application scope 1. A method for forming a substrate, the method includes: forming a semiconductor layer on the substrate; forming a An insulating layer is located on the semiconductor. A first metal layer is formed on the insulating layer. The first > L > ^ mA «metal layer is located above the + conductor layer and covers one of the semiconductor layers. Part or all; forming a dielectric layer on the first metal layer; and forming a second metal layer on the dielectric layer, the second metal layer is located above the semiconductor layer and covers the Part or all of the semiconductor layer. 2. The method described in item 1 of the scope of patent application, wherein the two: the metal layer includes a common line or a gate line) 〇3. The method described in item 1 of the scope of patent application, The first metal layer includes a data line. 4. A method of forming a liquid crystal display unit structure on a substrate ^ '•' The manual method includes: forming a semiconductor layer on the substrate; forming an insulating layer on the semiconductor layer; forming a first metal layer on the insulating layer Forming a dielectric layer on the first metal layer; and 4TOPPOLY0214TW10904.ptc Page 11 2004. 01. 〇8. 〇12 588186 Case No. 91134281 93 1 Amendment in September 6. The scope of the patent application forms a second metal layer on the dielectric layer 'the second metal layer is located in the Above the semiconductor layer and covering part or all of the semiconductor layer. 5. The method as described in item 4 of the patent application, wherein the second metal layer includes a data line. 6. The method according to item 4 of the scope of patent application, wherein the first metal layer is located above the semiconductor layer and covers part or all of the semiconductor layer. 7. The method according to item 6 of the patent application, wherein the first metal layer includes a common line or a gate line. 8. The method as described in claims 1, 2, 3, 4, 5, 6, or 7, wherein the semiconductor layer includes a poly-silicon layer. 9. The method according to item 8 of the scope of patent application, wherein a part of the semiconductor layer means not less than 70% of the area of the semiconductor layer. 1 0. A structure of a liquid crystal display unit, comprising: a semiconductor layer; a first metal layer located above the semiconductor layer and covering part or all of the semiconductor layer, 4TOPPOLY0214TW-Replacement page-010904.ptc Page 12 2004.01.08.013 588186 93 1 9 _Case No. 91134281_ Year, Month, and Amendment_ 6. Scope of patent application where the first metal layer includes a common line; and a second metal layer Is located above the first metal layer and covers part or all of the semiconductor layer. 11. A liquid crystal display unit structure comprising: a semiconductor layer; a first metal layer located above the semiconductor layer and covering part or all of the semiconductor layer; wherein the first metal layer includes a gate line And a second metal layer located above the first metal layer and covering part or all of the semiconductor layer. 1 2. The structure of a liquid crystal display unit according to item 10 or item 11 of the scope of patent application, wherein the second metal layer includes a data line. 1 3. A liquid crystal display unit structure including: a semiconductor layer; a first metal layer located above the semiconductor layer and covering part or all of the semiconductor layer; wherein the first metal layer contains a data A wire; and a second metal layer located between the semiconductor layer and the first metal layer and covering a part or all of the semiconductor layer. 1 4. The structure of a liquid crystal display unit as described in item 13 of the scope of patent application, 4TOPPOLY0214TW-Replacement page-010904.ptc Page 13 2004.01.08.014 588186 93 1 9 _Case No. 91134281_ Years and Months Amendment_ VI. Scope of patent application Where the second metal layer contains a common line. 15. The structure of a liquid crystal display unit according to item 13 of the scope of patent application, wherein the second metal layer includes a gate line. 16. The structure of a liquid crystal display unit as described in claims 10, 10, 1 3, 14 or 15 wherein the semiconductor layer includes a polycrystalline silicon layer. 17. The structure of a liquid crystal display unit as described in item 16 of the scope of patent application, wherein a part of the semiconductor layer means not less than 70% of the area of the semiconductor layer. 4TOPPOLY0214TW-Replacement page-010904.ptc Page 14 2004.01.08.015