TW587289B - Method and apparatus thereof for cleaning porous material - Google Patents

Abstract

A method and an apparatus thereof for cleaning porous materials at high pressure are disclosed. The method comprises applying the cleaning fluid at low pressure and then raising the reactive pressure increasingly from low pressure to high pressure of producing a supercritical fluid while using the supercritical fluid to clean process residue on porous materials, thereby balancing the internal-external pressure of the porous materials and achieving the object of damping pressure impact on the porous materials.

Description

587289 V. Description of the invention (1) The technical field to which the invention belongs: The present invention relates to a cleaning device, and in particular to a method for cleaning the impact of hole material residue on the hole material. Prior technology: temperature and pressure At the same time, the fluid above the boundary has many unique characteristics; its properties such as number and dissolving ability are close to that of liquid. The number of supercritical fluids', in turn, has the high density of liquids, heat transfer and permeability. In today's semiconductor processes, the layers, the formation of dielectric thin films, and currently, the use of supercritical fluids to directly use high pressure supercritical fluids must be inversely high (lb / in2, Psi) to 400 psi. In addition, in order to improve the electrical constant material of the device as a parasitic capacitance between the multilayer metal layer and the metal layer, to increase the operating speed of the device, among which, the number of the low dielectric constant thin film is the method of the low dielectric constant thin film porous material and Its equipment uses supercritical fluids (Supercritica 1) to reduce the high pressure of supercritical fluids and the devices they use. Valued fluids are called supercritical fluids. Supercritical properties such as viscosity, density, and diffusion are close in nature. Gas, and some properties have both low viscosity, high diffusion system and dissolving ability of the gas, so it has a very good quality. The connection between the two, and the improvement and reduction of the structure usually has a strong body can be washed in the process of the system. It can be formed almost every time The large hole material of the resistive electrical element is more useful for developing photoresistance residues and so on. When the residues are used, the commonly used ultra-prominent square inches of 400 pounds are all made of low dielectric materials. In order to reduce the delay time of the metal capacitance and the consumption of the feed rate.

Page 6 587289 V. Description of the invention (2) For example, the sulphur dioxide (S i 1 i c ο n D i ο X i d e) is low. In the semiconductor process, because the cleanliness of the substrate affects the process ^, it must usually be performed after each semiconductor = light or after each process is completed-then, two steps to remove the adhered to the substrate Process particles and: Residual ::, use high-pressure supercritical fluid to clean and adhere to insects ^ ^ ^ ^ ^ ^ crystal washing :; pressure of low-media supercritical fluid composed of hole materials non-material :: with: quite a lot At the same time, when the hole material is added, the holes, and the same material are coarsely buckled, and then the supercritical fluid is used to clean the impact. After the hole material is extruded and the supercritical fluid is squeezed, the hole material is broken; m; … Even leading to a serious impact, the process reliability and product yield will be affected by the invention: In view of the above-mentioned conventional utilization and the pressure of the fluid Fragile holes near fragile structure: == High pressure shock from critical fluid will fracture and damage. y '', 'even cause the hole material film to break. Therefore, the main method of the present invention is to buckle ^ one is to provide a method for cleaning the hole material in advance under low pressure-R = critical fluid treatment hole material film , Gradually increase the pressure to produce only super-J 4 rooms, and then make the reaction pressure from low pressure to high pressure in the state of lower pressure. In this way, the fluid molecules are gradually penetrated into the holes of the hole material film 587289.

In the present invention, the surface pressure film is subject to the present invention. Because of low pressure and low pressure, it can penetrate into the holes first. The present invention includes at least a variable endpoint inspection. Therefore, the supercritical to high pressure filled holes are gradually increased to the holes. Medium quality, and further including variable pressure pump measuring element can lift the hole. Therefore, the purpose of the drop body to resist supercritical fluid is to clean the supercritical fluid hole material film for a long time in the boundary fluid, and the purpose can be greatly improved is to activate the pressure pump to change the supercritical and clean the cleaning process. The capacity is greatly improved, and the impact is further affected by the provision of a thin body of clear pore material, which results in the pores. It is more effective to provide a clean and programmable fluid to the hole material to provide digital activation. Thin hole material can effectively avoid damage. When washing the hole material film, the itb used for cleaning is used to detect the 7C injection pressure at the end of the hole material film for cleaning the hole material film, and the method of grouping different end point films for subsequent hole materials is used. The pressure is washed from the fluid molecule fluid molecular material film. effect. Devices, pieces of which can be programmed for detection. For the purpose described above, the present invention further provides a method for cleaning hole materials, which includes at least the following steps: providing a substrate in a reaction chamber,-the substrate includes at least a film of hole material, and the hole material Thin, including at least a plurality of holes; providing a cleaning fluid for injecting the above reaction ^ :, wherein the reaction chamber has an initial pressure; and increasing the pressure of the above-mentioned reaction chamber at a preset pressurizing rate, so that the above-mentioned cleaning fluid Transformation into: supercritical fluid to use this supercritical fluid to clean the thin film of pore material. In ^, when the pressure of the reaction chamber is increased at the above-mentioned preset pressure rate, it further includes ^ including infiltrating the cleaning fluid into the holes of the hole material film, and filling the holes of the hole material film with the cleaning fluid.

Page 8 587289 V. Description of the invention (4) The device and body according to the materials described above; a chestnut which is connected to the above-mentioned pump with different pressure, and a terminal inspection room, which is one of the present invention. And because the end point detector cleans the fluid hole, it can increase the purpose of supercritical flow quality. Longer, causing impurities and residual results. Embodiments: The present invention discloses the purpose of cleaning holes, which at least includes: connecting the pump to a fluid; one and one of the processing back-inspectors, the mid-point detector is preferably implemented with a handle that can be programmed to add holes at a lower pressure. In addition to the high-pressure punching of the material body, there is something in the cleaning fluid, so that another fluid can be invented to store the above-mentioned fluid reaction chamber. The chamber should be used for this endpoint detection to detect the hole. The above-mentioned point detects the element state. The structure is filled with a thin film first, and then it is further improved because the cleaning takes a longer time. The hole is greatly improved. A cleaning hole slot is provided for storing first-class storage tanks, and the pump provides the processing reaction chamber connected and cleaning the hole material. ; The device is connected to the cleaning end point of the above-mentioned anti-hole material. The pump is a variable pressure pump. The pore strength of the pore material film is conducive to dissolving the pore material film in the pore material film after the resistance to the time when the pore material film fluid is present. Gradually increase the impurities in the internal and external pressure of the balance hole and the impact of the energy in the South pressure operation to operate the holes in a film to the supercritical flow force to increase the force and increase the time. There is a method of f and its device. It is in the clean room, so that the molecules of the cleaning fluid penetrate: and fill the holes, and then the reaction pressure from the high pressure formed by?. Therefore, it is not only the effect of the 2-hole material film that is resistant to supercritical fluids: Ϊ Ϊ: the effect of molecules on the hole material film / moon wash. To make the invention

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The description is more detailed and complete. You can refer to the following description and cooperate with Figure 1 and Figure 1. Please refer to Figure 1. Figure i is a flow chart showing the material of this hole. The first and second pictures of the Ming Dynasty and the Ming Dynasty are shown in Figure 2. Figure 2 is a schematic diagram showing the operation of the cleaning processor of this critical, ancient artifact. When using ultra-clear hole materials, firstly, as described in step 100, the processing reaction chamber 214 of the Λ processor 2 °° is used, in which the two are: a wafer of a general semiconductor process, and the substrate may be For example, the package 9 / the same material film is located on the substrate. This layer of hole material can be, for example, a dielectric material, and there are quite a lot of holes distributed in this layer of hole material; thin] The film is medium. 0 The substrate to be fixed in the processing reaction After the chamber 214, as described in step 102,

First, the fluid storage tank 204 is provided with the cleaning fluid from the fluid supply source 202, and then a variable pressure pump 20 6 connected to the fluid storage tank 204 is used to control the pressure of the cleaning fluid and pass the cleaning fluid through the variable pressure pump 2 6 The connected preheater 2 1 2 'is injected into the processing reaction chamber 2 1 4 where the substrate is located to use this cleaning fluid to remove process residues or impurities attached to the substrate and the hole material film thereon. The preheater 212 is also connected to the processing reaction chamber 214. The cleaning fluid is injected into the processing reaction chamber 2 1 4-after a preset period, the injection of the cleaning fluid is stopped. Among them, nitrogen (Nitrogen), argon (Argon), krypton (Xenon), carbon dioxide (Carbon Dioxide), propane (Propane), ammonia (Ammonia), isopropyl alcohol (IsOPrOPan〇l) ), Methanol (Metha η ο 1), and water. At this time, the control of the reaction chamber pressure is based on

Page 10 V. Description of the invention (6) The cleaning flow used is the same, and its critical pressure is shown in the following table. The following is the effect of the reaction at this time: the thickness to be cleaned, the hole washing fluid in this hole example, At this time, if the cleaning flow is controlled at about 50ps, then the flow is gradually set. This is because the cleaning ... The crushing w, the magnitude of the force is not the pressure of the cavity material, pressure, φ I 1 pressure and critical temperature of the hole material after the j time is affected by the hole in the material film 2: quality, the penetration of this hole material Tf mining ^. Earth search. In one embodiment of the present invention, when the sharp blade drought is between 15 psi and 100 liters of carbon dioxide, the reaction chamber pressure i is about 1 at this time. The molecules of the pre-pressurized body in the processing chamber 214 will gradually penetrate into the pore material and fill these holes. The fluids are not the same. table. This list of factors is ideal for implementing thin films. During the period of better force, the pores of the membrane indicate the fluid boundary pressure (Pc, Eii). 616 Ammonia___ 133 1654 Isopropanol_ 236 690 f Alcohol 240 1173 Water ......... 374 320 9

Page 11 587289 V. Description of the invention (7) Next, set the pressurization rate as described in step 104, and shake it one by one. The variable pressure pump 20Θ can be used to predict the pressure of Λ214 by a pre-pressure pump m. Among them, the variable pressure rate may change the pressure of the cleaning fluid depending on the host. The nature of the hole material film of the thickness m of the preset feed film, the hole material and the hole material film φ One of the features of the present invention is the size of the holes in the film. The low-pressure C reaction of the supercritical fluid reaches the pores of the 214 material film, and the π two-body knife gradually fills the pores. The internal and external pressures of the pores gradually increase, and the internal and external pressure of each pore in the material film gradually balances. This can achieve the purpose of overall structural strength. The sign of the pore material film is because the cleaning fluid has gradually reached the pores of the pore material film when the cleaning fluid has not yet reached the supercritical > south pressure of the melon body, and the residue in the pores can be dissolved first. Or impurities. In this way, the effect of the cleaning fluid on the residues or impurities in the holes can be greatly extended. When the fluid molecules to be cleaned fill the holes of the pore material film, the variable pressure pump 20 6 can be used to extract the fluid stored in the fluid storage tank 204 and increase the pressure of the fluid to exceed the threshold of the cleaning fluid. At this point, the cleaning fluid injected into the processing reaction chamber 2 1 4 is converted into a supercritical fluid as described in step 10 6. Yu 疋 'can remove the process residues attached to the substrate and the hole material film by the excellent permeability, high diffusion coefficient, and excellent dissolving ability of the supercritical fluid. The critical pressure at which the cleaning fluid is converted into a supercritical fluid depends on the type of cleaning fluid used and the reaction temperature. In this embodiment, in the embodiment, this page 12 587289 5. In the invention description (8), the pressure of the processing reaction chamber 214 is preferably increased to between 1000 psi and 600 psi. In addition, before the supercritical fluid enters the preheater 212, the cleaning processor 2000 can also provide a mutual solvent tank 2 08 and a pump 2 1 0, and the pump 2 1 0 can be used to place the mutual bath tank 2 0 8 The mutual solvent is added to the supercritical fluid to increase the solubility of the supercritical fluid, thereby improving the cleaning ability of the supercritical fluid. One end of the pump 210 is connected to the mutual solvent tank 208, and the other end of the pump 210 is connected to the preheater 212 and the variable pressure pump 206. In addition, the preheater 212 may be used to heat the supercritical fluid before entering the processing reaction chamber 214, and may also be used to heat the mutual solvent, or to simultaneously heat the supercritical fluid and the mutual solvent. The cleaning time of the supercritical fluid may depend on the thickness of the hole material film to be cleaned, the thickness of the material film, the size of the holes in the hole material film, and the penetration of the hole material by the supercritical fluid. Sex, etc. The programmable end point detection element 2 丨 6 is connected to the processing reaction chamber 2 丨 4. During the cleaning process, the total time from the start of the injection of the supercritical fluid to the end of the processing reaction chamber 214 can be calculated, or the supercharging time of the injection into the processing reaction chamber 214 can be calculated. Critical fluid: body Ϊ 2 dagger programmable end point detection element 2 16 can be based on the needs of the cleaning process: 2 sets of different end point detection, and the cleaning fluid can be changed according to ^ 1 1 until the programmable end point detection element 21Θ is detected The end point of cleaning H = I, stop the supply of supercritical fluid 'and collect the supercritical flow after cleaning in the "programmable end point detection element 2 1Θ connected separator 218, which can be used to collect impurities in the supercritical fluid after cleaning or ^ ". In addition, if the treated supercritical fluid is recycled, it will be recycled and reused, and if there is no cost for recycling

Page 13 587289 V. Description of the invention (9) If the value of '9 is not harmful to the environment, one of the advantages of the present invention is that when the film is used,' the pressure is first gradually increased under low pressure in a low-pressure environment to produce supercritical molecules. Fill the holes in the lower pressure state. Due to the structural strength ', the resistance of the hole material can be improved to ensure the yield of the hole material. Another advantage of the present invention is that the pressure in the reaction chamber is reduced to the required high pressure in the case of a thin film. Therefore, it is used in the holes of the same material film. In this way, the action time of the impurities in the film can obtain the impurities in the hole material film for the purpose of cleaning effect. Yet another advantage of the present invention is that it includes at least a variable pressure pump and, as a result, it is possible to change the detection levels of the different end points in the array provided in the supercritical fluid. It can be discharged into the external environment. The supercritical fluid is used to treat the pore material thin for a period of time 'and then the reaction pressure is increased from the high pressure at the time of the fluid. In this way, Jixia's "gradual penetration into the pore material film" can strengthen the quality of the pore material film sister film to the subsequent high-pressure g critical fluid film ', and then achieve the goal of using a supercritical fluid to clean the pore material. Supercritical fluid-shaped 'moon-washed fluid molecules can first penetrate into the pores' and the 'fluid molecules extend to the pore material thin thin towel field' and can be more effectively dissolved to achieve the pore-material film lifting device of the present invention. Programmable endpoint detection element. Due to the incident pressure, it is also possible to improve the flexibility of the cleaning process during the cleaning process. As understood by those skilled in the art, it is only a preferred embodiment, and is not intended to limit the above to the present invention, which is not more than the others. The scope of patent application for the invention disclosed in this invention;

587289 V. Description of invention (ίο) Decorations shall all be included in the scope of the following patent application. Page 15 587289 The diagram simply illustrates the preferred embodiment of the present invention, which has been supplemented by the following figures in the preceding explanatory text. The description is as follows: FIG. 1 is a flow chart showing a method for cleaning a hole material according to a preferred embodiment of the present invention; and FIG. 2 is a schematic view illustrating the operation of a cleaning processor according to a preferred embodiment of the present invention. Comparative description of drawing numbers: 100 provides substrate 102 provides cleaning fluid 104 raises pressure in reaction chamber 106 forms supercritical fluid 200 cleaning processor 202 fluid supply source 204 fluid storage tank 206 variable pressure pump 208 mutual solvent tank 210 pump 212 preheating 214 Processing reaction chamber 216 Programmable endpoint detection element 218 Separator

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Claims (1)

587289 6. Application scope 1. A method for cleaning holes (P0r0us) material, at least comprising: providing a cleaning fluid at a first pressure for a first time; and providing the second pressure at a second pressure The cleaning fluid continues for a second time, wherein the second pressure is greater than the first pressure. 2. The method for cleaning pore material according to item 1 of the patent application, wherein the cleaning fluid forms a supercritical fluid under the second pressure. 3. The method for cleaning pore materials as described in item 1 of the scope of patent application, wherein the cleaning fluid is carbon dioxide (C a r b ο n D i ο X i d e). 4. The method for cleaning pore materials as described in item 1 of the scope of patent application, wherein the cleaning flow system is selected from the group consisting of nitrogen (Nitrogen), argon (Argon), gas (Xenon), propane (Propane), ammonia ( Ammonia), Isopropanol, Methanol, and water. 5. The method for cleaning a hole material according to item 1 of the patent application scope, wherein the first pressure is between 15 psi and 100 psi. 6. The method for cleaning a hole material as described in item 1 of the scope of the patent application, wherein the magnitude of the second pressure depends on the type of the cleaning fluid. Page 17 587289 6. Application scope of patent 7. The method for cleaning hole materials as described in item 1 of the scope of patent application, wherein the hole material includes at least a plurality of holes, and the first time and the second time depend on The nature of the hole material, the thickness of the hole material, and the size of the holes in the hole material. 8. The method for cleaning hole materials as described in item 1 of the scope of patent application, wherein the first time and the second time depend on the type of the cleaning fluid. 9. A method for cleaning hole material, which is suitable for cleaning a film of hole material on a substrate, wherein the film of hole material includes at least a plurality of holes, and the method of cleaning hole material includes at least: injecting a cleaning fluid into a reaction In the chamber, wherein the reaction chamber has a first pressure; and increasing the pressure of the reaction chamber at a preset pressure rate, thereby increasing the pressure of the reaction chamber from the first pressure to a second pressure, so that the The cleaning fluid is converted into a supercritical fluid to clean the thin film of pore material. I 0 · The method for cleaning hole materials as described in item 9 of the scope of patent application, wherein the substrate is a wafer. II. The method for cleaning pore materials as described in item 9 of the scope of the patent application, wherein the cleaning fluid is carbon dioxide. Page 18 587289 6. Application for patent scope 1 2. The method for cleaning pore materials as described in item 9 of the scope of patent application, wherein the cleaning flow system is selected from the group consisting of nitrogen, argon, krypton, propane, ammonia, isopropyl A group of alcohols, methanol, and water. 1 3. The method for cleaning hole materials as described in item 9 of the scope of the patent application, wherein the first pressure is between 15 psi and 100 psi. 1 4. The method for cleaning a hole material as described in claim 9 in the patent application scope, wherein the preset pressure rate depends on the nature of the hole material film, the thickness of the hole material film, and the hole material film. The size of these holes. 1 5. The method for cleaning hole materials according to item 9 of the scope of the patent application, wherein the second pressure is between 1000 psi and 6000 psi. 16. The method for cleaning the hole material according to item 9 of the scope of the patent application, wherein when the pressure of the reaction chamber is increased at the preset pressure rate, the method further includes at least filling the cleaning fluid with the hole in the hole material film. Some holes. 17. A device for cleaning pore materials, at least comprising: a fluid storage tank for storing a fluid; a pump, wherein the pump is connected to the fluid storage tank, and the pump provides the fluid with different pressures, a A processing reaction chamber, wherein the processing reaction chamber is connected to the pump, and the processing reaction chamber Page 19 587289 6. The application scope of the patent application room is used to place and clean the hole material; and an end point detector, wherein the end point detector is connected to the processing reaction chamber, and the end point detector is used to detect the cleaning of the hole material. end. 1 8. The device for cleaning hole materials according to item 17 of the scope of patent application, wherein the endpoint detector is a programmable endpoint detector. 19. The device for cleaning hole materials according to item 17 of the scope of patent application, further comprising at least a mutual solvent tank connected to the processing reaction chamber and the pump. 20. The device for cleaning hole materials according to item 19 of the scope of patent application, further comprising at least a preheater connected to the processing reaction chamber, the mutual solvent tank, and the pump. 2 1. The device for cleaning pore materials according to item 17 of the scope of patent application, wherein the pump is a variable pressure pump.