586179 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種濕製程系統之晶圓加工裝置與方 法’尤指一種適用於電化學電鍍之晶圓加工裝置與方法。 【先前技術】 10 15 電化學電鍍（ECP·· Electrochemical Plating)為一種 濕製程系統，其將化學溶液電解質中的銅轉移到晶圓表面 (，極），做出重複、無空洞、且能立即進行化學機械研磨 的薄膜，並提供最大的製造良率和生產力。隨著導線結構進 入次微米時代，對於銅金屬電化學電鍍技術的挑戰也與曰倶 增；如為避免線路（lines)或栓塞孔（vias)在沉積的過程 中出，空洞’在充填這些溝槽時，就必須由下而上處理；而 且其沉積在晶圓表面上的薄膜’也必須非常均勾，厚度差異 必須控制在：個百分點（一個sigma)或是更小的範圍内:、 在電鑛過&中’氣泡可能經由流體本身、機台操作、製 ，反二=濕晶圓的傳送過程中產生。在一般的電鍍室 會因::二ΐ 加工面朝下之晶圓，此時流體中的氣泡 20 11^ 度。、 ，、4基材表面的缺陷數並增加沈積製程的穩定 發明人菱因於此，本於積 解決上述r 雜毛明之精神’亟思-種可以 :决上述問喊之「濕製程系統 實驗終至完成此項嘉惠世人H 法」“研九 5 【發明内容】 工本發明之主要目的係在提供一種濕製程系統之晶圓加 々裝置’俾旎減少氣泡累積在晶圓表面上，使晶圓表面的缺 陷數減少並增加沈積製程的穩定度。 、 本發明之另一目的係在提供一種濕製程系統之晶圓加 工方法，俾能使因浮力而限制在晶圓表面的氣泡在震動器的 驅動下，移出晶圓表面，減少晶圓表面的缺陷數。 為達成上述目的，本發明之濕製程系統之晶圓加工裝置 包含一晶圓支撐元件，一接觸環，以及一震動器，其中晶圓 支撐元件，可接收並移動晶圓；接觸環係連結至晶圓支撐元 件，與晶圓支撐元件共同夾置該晶圓，以使晶圓可隨晶圓支 撐元件移動；震動器係與晶圓支撐元件相連，用以於該晶圓 15 表面潤濕或沈浸於一溶液時，產生震動以移除晶圓表面氣 泡。 為達成上述目的，本發明之濕製程系統之晶圓加工方 法，步驟包括提供一具有一晶圓支撐元件，一接觸環，以及 一震動器之晶圓加工裝置；將晶圓置放在濕製程系統中晶圓 加工裝置之晶圓支撐元件上；調整晶圓支撐元件以使晶圓傾 20斜一角度；移動晶圓支撐元件使晶圓以此傾斜角度浸入一溶 液中，並開啟該震動器去除氣泡；將該晶圓由傾斜角度移至 水平，晶圓加工製程即開始進行。 本發明之濕製程系統之晶圓加工裝置，較佳為接收一加 工面朝下之晶圓。本發明之濕製程系統之晶圓加工裝置，較 586179 、佳為包^複數個退片彈性頂柱，與晶圓支撐元件相連，當晶 圓置入曰曰圓加工裝置時，此些退片彈性頂柱可均勻支撐晶圓 =未加工面，使晶圓在製程程序中，不受外力影響而移動， 5並使晶圓在製程結束時，易於移出於該晶圓加工裝置外。更 5 =為再填充一緩衝墊片，於除氣泡震動器與退片彈性頂柱之 本fx明之濕製程系統之晶圓加工方法，應用之範圍無 、、制可為任何晶圓之濕製程，較佳應用在電鍍室，而該溶 、胃車乂佳為電解液。換言之，即是可應用在任何製程過程中 10曰曰圓會與製程溶液直接接觸之系統。在濕製程系統之晶圓加_ 方法中，製程完成後，晶圓可以垂直於溶液表面或與溶液 面領斜角度方式移出溶液外。另外，晶圓加工裝置之震 動器較佳為啟動於晶圓與製程溶液接觸時。 15【實施方式】586179 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a wafer processing apparatus and method for a wet process system ', especially a wafer processing apparatus and method suitable for electrochemical plating. [Prior art] 10 15 Electrochemical Plating (ECP ·· Electrochemical Plating) is a wet process system that transfers copper in a chemical solution electrolyte to the wafer surface (pole), making it repeatable, void-free, and immediately Chemically-mechanically polished films provide maximum manufacturing yield and productivity. As the wire structure enters the sub-micron era, the challenges for copper electroplating technology are increasing. For example, in order to avoid lines or vias from being deposited during the deposition process, voids are filling these trenches. In the groove, it must be processed from bottom to top; and the film deposited on the wafer surface must also be very uniform, and the thickness difference must be controlled within: a percentage point (a sigma) or less: In electrical mining & in the 'bubble may be generated by the fluid itself, machine operation, production, reverse two = wet wafer transfer process. In a general electroplating room, the processing surface of a wafer facing downward will be caused by :: 2ΐ, and the bubbles in the fluid will be 20 11 ^ degrees. ,,, 4 The number of defects on the surface of the substrate and increase the stability of the deposition process. The inventor Ling therefore because of this, the spirit of this product to solve the above-mentioned r Zomao Ming's' thinking-a kind can be: the above-mentioned question "wet process system experiment Finally, the "Huihui World H Method" "Research No. 5" [Content of the Invention] The main purpose of the invention is to provide a wafer processing system for a wet process system to reduce the accumulation of bubbles on the surface of the wafer, so that The number of defects on the wafer surface is reduced and the stability of the deposition process is increased. Another object of the present invention is to provide a wafer processing method for a wet process system, which can cause bubbles confined on the wafer surface to vibrate due to buoyancy. Driven by the device, the wafer surface is removed to reduce the number of defects on the wafer surface. In order to achieve the above object, the wafer processing device of the wet process system of the present invention includes a wafer support element, a contact ring, and a vibrator, The wafer support element can receive and move the wafer; the contact ring is connected to the wafer support element and sandwiches the wafer with the wafer support element so that the wafer can be supported with the wafer The vibrator is connected to the wafer supporting element, and is used for generating vibration when the surface of the wafer 15 is wetted or immersed in a solution to remove bubbles on the surface of the wafer. In order to achieve the above object, the wet process of the present invention The wafer processing method of the system includes the steps of providing a wafer processing device having a wafer supporting element, a contact ring, and a vibrator; and placing the wafer in a wafer processing device in a wet processing system. On the component; adjust the wafer support component to tilt the wafer at an angle of 20; move the wafer support component to immerse the wafer in a solution at this tilt angle, and turn on the vibrator to remove air bubbles; move the wafer from the tilt angle Move to the level, the wafer processing process starts. The wafer processing device of the wet processing system of the present invention preferably receives a wafer with a processing side facing down. The wafer processing device of the wet processing system of the present invention is relatively 586179, it is better to pack a plurality of ejection elastic top posts, which are connected to the wafer support element. When the wafer is placed in a circular processing device, these ejection elastic top posts can evenly support the wafer = not The working surface allows the wafer to move without being affected by external forces during the manufacturing process, and 5 allows the wafer to be easily removed from the wafer processing device at the end of the manufacturing process. More 5 = to fill a buffer pad, The wafer vibrator and the fx Ming wet process system wafer processing method of the bubble vibrator and the ejection elastic top column can be applied to any wafer wet process, and is preferably used in the electroplating room. Che Yujia is the electrolyte. In other words, it can be used in any process during the process of the 10th round will be in direct contact with the process solution. In the wet process system wafer addition method, after the completion of the process, the wafer can Move out of the solution perpendicular to the solution surface or at an oblique angle with the solution surface. In addition, the vibrator of the wafer processing device is preferably started when the wafer is in contact with the process solution. 15 [Embodiment]
為月b讓貝審查委員能更瞭解本發明之技術内容，特舉 一較佳具體實施例說明如下。 20 如圖1所示為一電鍍室之晶圓加工裝置1〇〇，其包含一晶 =支撐τΜ牛110，以接收一加工面朝下之晶圓12〇 (虛線部 刀）並用以移動该晶圓12〇 ; 一連結至晶圓支撐元件㈣ 之接觸環13G，以承接晶圓m使晶圓12()夾置於晶圓支撐元 件110與接觸環130間，使晶圓120隨晶圓支撐元件no移動； 複數個退片彈性頂柱⑽，與晶圓支撐元件⑽目連，用以固 定支撐晶圓12G之未加工面，防止晶圓12()因外力而移動，並 使晶圓在製程結束時，易於移出於該晶圓加工裝置ι〇〇外； 7 25 586179 一與f晶圓支撐元件no相連之震動器15Q，於晶圓12〇表面 潤濕或沈浸於一電解液時，產生震動以移除晶圓表面氣泡； 一氣密橡膠環145以防止該電解液流入晶圓之未加工面；以 及緩衝墊片160，用以填充介於震動器150與氣密橡膠環 5 145之空隙。 如圖2所示為一電鍍室之晶圓加工方法，其中該電鍍室 包含一晶圓加工裝置1〇〇，其如前所描述，具有一晶圓支撐 元件110、一接觸環13〇、複數個退片彈性頂柱14〇、至少一 氣密橡膠環145、一緩衝墊片160、與一震動器15〇。首先將籲 10 一晶圓加工面朝下並傳入電鍍室中，以便開始電鍍製程；緩 衝墊片160充氣，使晶圓固定在電鍍室中晶圓加工裝置之晶 圓支撐元件上，此時，晶圓仍位在乾燥區中，並往下移動晶 圓120,使其接近電解液170;將晶圓傾斜一角度；使該晶圓 旋轉並慢慢浸入一電解液170中，同時將除氣泡裝置之震動 15器開啟；此時，晶圓表面的氣泡會順勢沿晶圓傾斜之表面移 出液體外；將晶圓傾斜角度移至零度使其水平，此時該晶圓 即位在製程位置上，並開始製程程序；晶圓表面累積之氣泡鲁 會受震動器所給予之驅動力及旋轉離心力，移出晶圓表面； 待製程完成後，將晶圓以垂直於液面方向移至乾燥區，開始 20乾燥；最後，將晶圓傳出製程室外。 本發明之濕製程系統之晶圓加工裝置能有效減少由流 體本身、機台操作、製程反應、或由濕晶圓的傳送過程中產 生氣泡累積在晶圓表面上，使基材表面形成的缺陷數減少並 增加薄膜沈積製程的穩定度。 8 主 上述實施例僅係為了方，說明而舉例而已，本發明所王 張=權利範圍自應以申請專利範圍所述為準，而非僅限於上 述實施例。 、 【圖式簡單説明】 圖1係本發明之晶圓加工裝置一較佳實施例之立體圖。 圖2係本發明之濕製程系統之晶圓加工方法一較佳實施例之 流程圖。 【圖號說明】 100晶圓加工裝置110晶圓支撐元件120晶圓 130接觸環 140退片彈性頂柱145氣密橡膠環 15〇震動器 160緩衝墊片 170電解液In order to let the reviewing committee members better understand the technical content of the present invention, a preferred embodiment is described below. 20 As shown in FIG. 1, a wafer processing device 100 of a plating room includes a crystal = supporting τΜ110, so as to receive a wafer 120 with a processing surface facing downward (a broken line knife) and used to move the wafer. Wafer 12; a contact ring 13G connected to the wafer support element 承 to receive the wafer m and sandwich the wafer 12 () between the wafer support element 110 and the contact ring 130 so that the wafer 120 follows the wafer The support element no moves; a plurality of ejection elastic top posts ⑽ are connected to the wafer support element ⑽ to fix and support the unprocessed surface of the wafer 12G, prevent the wafer 12 () from moving due to external forces, and make the wafer At the end of the process, it is easy to move out of the wafer processing device ι〇〇; 7 25 586179 A vibrator 15Q connected to the f wafer support element no, when the surface of the wafer 120 is wet or immersed in an electrolyte Generates vibration to remove air bubbles on the wafer surface; an air-tight rubber ring 145 to prevent the electrolyte from flowing into the unprocessed surface of the wafer; and a buffer pad 160 for filling the vibrator 150 and the air-tight rubber ring 5 145 Gap. As shown in FIG. 2, a wafer processing method for a plating chamber is included. The plating chamber includes a wafer processing apparatus 100, which has a wafer supporting element 110, a contact ring 13 and a plurality of wafers, as described above. Each ejecting elastic top post 14, at least one air-tight rubber ring 145, a cushion gasket 160, and a vibrator 15. Firstly, the wafer with the processing surface facing downward is introduced into the plating chamber to start the plating process; the cushioning pad 160 is inflated to fix the wafer on the wafer supporting element of the wafer processing device in the plating chamber. , The wafer is still in the dry area, and the wafer 120 is moved down to bring it closer to the electrolyte 170; the wafer is tilted at an angle; the wafer is rotated and slowly immersed in an electrolyte 170, while removing the The vibration device of the bubble device is turned on; at this time, the bubbles on the wafer surface will move out of the liquid along the inclined surface of the wafer; move the wafer tilt angle to zero degrees to make it horizontal, and the wafer is now in the process position. And start the process; the bubble bubbles accumulated on the wafer surface will be moved out of the wafer surface by the driving force and rotary centrifugal force given by the vibrator; after the process is completed, the wafer will be moved to the drying area perpendicular to the liquid surface, Start 20 drying; finally, transfer the wafer out of the process room. The wafer processing device of the wet process system of the present invention can effectively reduce the defects generated by the fluid itself, the machine operation, the process reaction, or the transfer of the wet wafer on the wafer surface to cause defects on the surface of the substrate. This reduces the number and increases the stability of the thin film deposition process. 8 Main The above embodiments are just examples for the sake of explanation and explanation. The scope of the rights of the present invention shall be based on the scope of patent application, rather than being limited to the above embodiments. [Brief Description of the Drawings] FIG. 1 is a perspective view of a preferred embodiment of a wafer processing apparatus of the present invention. FIG. 2 is a flowchart of a preferred embodiment of a wafer processing method for a wet process system of the present invention. [Illustration of drawing number] 100 wafer processing device 110 wafer supporting element 120 wafer 130 contact ring 140 ejection elastic top post 145 air-tight rubber ring 15 shocker 160 buffer gasket 170 electrolyte