TW578177B - Trench capacitor and method for manufacturing thereof - Google Patents

Abstract

A trench capacitor is formed by a lower electrode, an upper electrode and a dielectric layer. The lower electrode is in a substrate, and the lower electrode is formed by a lower electrode body and a plurality of first salient. An end point of the first salient connects to the lower electrode body, and other end point of the first salient extends from the lower electrode to a first direction. The upper electrode is in the substrate, and the upper electrode is in a opposite location where extending from the lower electrode. The upper electrode is formed by an upper electrode body and a plurality of second salient. An end point of the second salient connects to the upper electrode body, and other end point of the second salient extends from the upper electrode to a second direction. The second direction is opposite to the first direction. The second salient and the first salient are alternate arrangement. The dielectric layer is between the upper electrode and the upper electrode.

Description

578177 V. Description of the invention (l) — [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a semiconductor element, and more particularly, to a structure and manufacturing method of a deep trench capacitor method. [Prior technology] In dynamic random access memory (DRAM), the capacitor is the heart of the signal. If the capacitor stores more charge, it is less susceptible to noise when reading data (such as generated by 帻). The soft errors K (sft, Errors)) are more likely to reduce the refresh frequency of the dynamic random access memory. However, when the semiconductor process enters the deep sub-micron (j) eep sub-micron process, the component size gradually decreases, which means that it can be used as a capacitor for the conventional memory access structure. No., space is getting smaller. So how to keep capacitors with sufficient capacitance: an important issue in semiconductor processes below 0,25 microns. There are mainly eight types of structures of dynamic random access memory (DRAM) capacitors. One is a stack capacitor, and the other is a deep-trench capacitor. The other is not a stack capacitor or a deep-trench capacitor. It is a deep trench capacitor. Under the requirements of the semiconductor element rule, its manufacturing technology has encountered more and more difficulties. Among them, stacked capacitor technology is the main method of traditional semiconductor capacitor manufacturing. The surface area of the capacitors includes the Hemi-Spherical Grain (HSG) process, as well as the capacitor structure, such as Crown, Fin, and stiff modification.

578177 V. Description of the invention (2) (Cyll = der), or extended (Spread) and other structures. / However, although the technology of stacked capacitors is more common, the problem of planarization of the memory elements must be overcome. On the other hand, since the deep trench capacitor is manufactured in the substrate, it is not easy to cause the problem of planarization, and it is more favorable for manufacturing when the size of the memory element is reduced. Please refer to FIG. 1. The conventional trench capacitor 108 is composed of a lower electrode i 02 located on the substrate 100, an upper electrode located above the lower electrode 102, and an upper electrode 106 and a lower electrode. It is composed of a dielectric layer 104 between 102. . For the above-mentioned repeated capacitor 108, since the capacitor log has only a single-layered dielectric layer 104 for storage of the capacitor, the storage capacity of the capacitor 108 cannot be greatly improved. Therefore, it is still very difficult to use the above capacitors to manufacture capacitors with a capacitance of 6 million bits or even more than one billion bits under the limitation of component size design. [Summary of the Invention] In view of this, one object of the present invention is to provide a trench capacitor structure and a manufacturing method thereof, which can greatly increase the surface area of the capacitor, and can obtain a capacitance of 256 million bits or even a billion bits. Capacitors above the yuan. Another object of the present invention is to provide a structure of a trench capacitor and a manufacturing method thereof, so that a large number of capacitors can be obtained even when the size of a component is reduced.

(3) The present invention proposes a method for manufacturing fly-by electricity after a trench is formed in a substrate. The method is a region and a partially doped region; j is formed in a substrate at the bottom of the trench. The first dielectric layer is doped to form a first dielectric layer. Then, an electrical layer, a first conductive layer and a layer, and a second dielectric layer are sequentially arranged in the trench, wherein the first dielectric part and the second dielectric layer and the j $ electric layer are not filled in the trench. Then, move the conductive layer and the first dielectric layer on the sidewall of the trench, leaving only a bit, and then on the sidewall of the trench I = 2, the first conductive layer and the first dielectric layer. To form a second conductive layer and a fourth dielectric layer; f three dielectric layers, and the layers are not filled in the trenches in sequence. Then, ': wherein the top surfaces of the second conductive layer and the fourth dielectric layer are lower than the top surface of the trench, and a material layer is filled in the trench, wherein the material dielectric layer, the first conductive layer, and the material are removed. A first electrical layer and a fourth dielectric layer. ——; 丨 the electrical layer, the third dielectric layer, the second conductive wall, and the exposed second conductive sound i π f = the material layer, and then after the trench side, fill in a fifth dielectric layer in the trench. And a sixth dielectric layer. The conductive layer is electrically connected. And Le Er v electric layer, wherein the third conductive layer and the first above-mentioned first conductive layer and the capacitor upper electrode: and the fourth conductive layer constitutes the electrode below the trench container. @ ^ / A conductive layer and a doped region constitute a trench-type lightning layer) and the upper part of the upper part is divided into an upper electrode body (the fourth and lower electrodes can be divided into a conductive layer and a third conductive layer). The second conductive body (", &, the second conductive layer in the substrate at the bottom of the trench). The protrusions of the replacement electrodes extending to the side wall of the heart are intersected, and the protrusions of the upper electrode of the middle are arranged next to each other, and the dielectric layer (the first dielectric layer, the first: 578177: V. Description of the invention (4)

The electrical layer, the third dielectric layer, the fourth dielectric layer, the fifth dielectric layer, and the sixth dielectric layer are formed between the upper electrode and the lower electrode. Because the protrusions of the upper electrode and the protrusions of the lower electrode are arranged crosswise to each other, the area between the upper electrode and the lower electrode is increased, and the charge storage capacity of the trench capacitor can be increased. Ding Eryu The trench is formed on the second conductive layer and the first dielectric layer of the trench, and the second conductive dielectric layer is formed on the trench. The thickness of the sublayer layer at the output portion has a large capacitance, and the material is sequentially filled in the upper and inner shapes. The electrical layer and the fourth dielectric layer, the first conductive second conductive layer, the first conductive first conductive layer, and the first conductive second conductive layer can form an upper electrode, and the vapor deposition of the present invention is thin, and the amount of conductive layers is described. Step 4 of forming a second conductive material layer, a dielectric layer. Then, the dielectric layer and the second and fourth dielectric layers of the fourth dielectric layer and the second and fourth dielectric layers have a plurality of trenches. The trench-type electrogastric method is so deposited that the etching step can be performed before the steps of the & dielectric layer and the fourth dielectric layer, leaving only the order of the sidewalls of the trench to be performed sequentially on the dielectric layers in the trench. As for the steps of the trench layer, then repeat the steps In the trench, the steps of the dielectric layer are sequentially followed by the steps of the trench layer, and then the electrodes and capacitors under the rear protrusion are performed. The conductive layer and the dielectric of the valley device are formed. Therefore, the size design of each conductive element is limited. The electric valley device can further remove the second conductive layer to form a first channel and then sequentially remove the second conductive layer to form a first channel. There are multiple protruding layers based on the original layer and the dielectric. The obtained capacitor is composed of a lower electrode of the present invention, another upper electrode of a trench capacitor and a dielectric layer.

‘This trench capacitor has a lower electrode on the substrate 578177 5. In the description of the invention (5), and the lower electrode is composed of a lower electrode body and a plurality of ★ 一 穿 屮 Qiu Xichu r. No. Inu Chube. The first "right-end" is connected to the lower electrode body and the two ends extend from the lower electrode in a first direction. The upper two, the middle, and are located at the relative positions extending from the lower electrode toward the first side Θ to the direction of the base. Power on; ί 土 ΐΐϊίίΓ composed of two second protrusions. The second protrusions extend in the m-direction: the second direction is arranged alternately with the-direction. The dielectric layer is opposite and the second protrusions are And the first protrusion is placed between the upper electrode and the lower electrode. Qiu Xiben's Ming-type trench capacitor, the multiple protrusions of the upper electrode. ^ — The big out of the line is a form of parent arrangement, so 玎 = ^ 加In the case of the size of the element, by changing the size of the aforementioned protrusions to increase the area between the upper electrode and the lower electrode, the storage capacity of the trench capacitor can be increased. The above and other items #, features, and advantages can be made clearer: A preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows: [Embodiment] a 2 to 11 are shown as A trench capacitor according to a preferred embodiment of the present invention A cross-sectional view of the manufacturing process of the device. Η / ,,,, and 凊 Refer to FIG. 2 to provide a substrate 200, and then form a trench 202 and a doped region 204 on the substrate. The doped region 204 is formed at the bottom of the trench. The substrate 200, y soil & zuu T and partly extends to the side wall of the trench 202. The formation step of the trench 202 is, for example, forming a picture before the surface of the substrate 200

578177 V. Description of the invention (6) The patterned mask layer (not shown). The material of the patterned mask layer is, for example, silicon nitride. The method of forming the patterned mask layer is, for example, chemical gas. The phase deposition method (Chemical Vapor Deposition, CVD) forms a mask layer to cover the substrate 200, and then performs a lithography process to form a pattern in the mask layer. Then, a one-touch etch process is performed to form a trench 202 in the substrate 2000. The method of etching the trench 202 in the substrate 200 is, for example, a dry money engraving method. The width of the trench 202 is, for example, about 2600 angstroms, and in the following description, the dimensions of each component are described based on the width of the trench 202. The step of forming the red doped region 204 is, for example, forming a doped insulating layer (not shown) in the trench 202, and the material of the doped insulating layer is, for example, a silicon oxide layer doped with arsenic ions. The method of doping the insulating layer is, for example, formed by in-situ doping ions and using a chemical vapor deposition method. Then, a photoresist layer (not shown) is formed at the bottom of the trench 204. The photoresist layer in the bean does not fill the trench 202 'and the surface of the photoresist layer is located on the substrate screen. Part of the barrier layer is doped with insulation; fluorine: (1 ff = layer method is, for example, a wet-type engraving method, which is illustrated by a buffer), and the material of the partition wall = 2 is formed on the partition wall (not

Ethyl Ortho S i 1 i Cate V ^ ^ ^ (Tβ ΪΓ3 Oxygen formed by chemical vapor deposition): Milk (〇3) is a reaction gas source and bottom 200 is subjected to a thermal process, so that the photoresist layer is removed by pushing And then doped into the substrate to form-doped S f. In the layer; after the diffusion of the substance into the base A, the dopant in the trench 202 is removed.

578177 V. Description of the invention (7) The gap between the hetero insulation layer and the side wall of the trench 202. The method for removing the doped insulating layer and the spacer is, for example, a wet-etching method, which uses a buffer hydrofluoric acid (Buffer HF, BHF) or a diluted hydrofluoric acid (Diluted HF, DHF) as an insecticide. Next, referring to FIG. 3, a conformal first dielectric layer 206a is formed in the trench 202, and the material is, for example, nitride or oxide. Specifically, the material of the first dielectric layer 206a is, for example, aluminum oxide or silicon nitride. A method for forming the first dielectric layer 206a is, for example, an atomic layer chemical vapor deposition (ALCVD) method or a low pressure chemical vapor deposition (LPCVD) method. The thickness of the first dielectric layer 20 6a is, for example, about 100 to 300 angstroms. After that, a conformal first conductive layer 2 08a is formed on the first dielectric layer 20 6a. The material is, for example, an anti-oxidation metal compound or an anti-nitridation metal compound. 12,000 degrees Celsius. Specifically, the material of the first conductive layer 20 8a is, for example, titanium nitride. The method for forming the first conductive layer 208a is, for example, an atomic layer chemical vapor deposition method or a low-pressure chemical vapor deposition method. The thickness of the first conductive layer 208a is, for example, about 100 to 200 angstroms. Next, a conformal second dielectric layer 21 0a is formed on the first conductive layer 208a, and the material is, for example, nitride or oxide. Specifically, the material of the second dielectric layer 210a is, for example, oxide or nitride. The method for forming the second dielectric layer 21 oa is, for example, an atomic layer chemical vapor deposition method or a low-pressure chemical vapor deposition method. Furthermore, the thickness of the second dielectric layer 2 1 0 a is, for example, 50 Angstroms to

Page 12 578177

Around 150 Angstroms. After that, please refer to FIG. 4 to remove part of the second dielectric layer 20a, the first conductive layer 208a, and the first dielectric layer 206a, leaving only the second dielectric layer on the sidewall of the trench 202. The electrical layer 210b, the first conductive layer 208b, and the first dielectric layer 206b). Among them, a method of removing a part of the second dielectric layer with ytterbium, the first conductive layer 208a, and the first dielectric layer 206a includes an anisotropic etching method, such as a plasma etching method and a reactive ion etching method. Wait. Next, referring to FIG. 5, a conformal second dielectric layer 212a is formed on the substrate 200 to cover the exposed substrate 200, the doped region 204, the first dielectric layer 20 6b, The first conductive layer 208b and the second dielectric layer 210b. The material of the third dielectric layer 21 2a is, for example, a nitride or an oxide. Specifically, the material of the third dielectric layer 212a is, for example, aluminum oxide or silicon nitride. The method for forming the third dielectric layer 2 ^ 1 2a is, for example, an atomic layer chemical vapor deposition method or a low-pressure chemical vapor deposition method. The thickness of the third dielectric layer 212a is, for example, about 50 to 150 angstroms. After that, please refer to FIG. 6, and remove a part of the third dielectric layer 2 1 2 a, leaving only the third dielectric layer 212 b on the sidewall of the trench 202. Among them, the method of removing 4 as the second dielectric layer 21 2 a includes an anisotropic money engraving method, which is, for example, a plasma etching method, a reactive ion etching method, or the like.

Next, referring to FIG. 7, a conformal second conductive layer 214a is formed on the substrate 200 to cover the exposed substrate 2000, the doped region 204, the first dielectric layer 206b, and the first conductive layer. Layer 208b, second dielectric layer 212b, and third dielectric layer 212b. The material of the second conductive layer 21 4a is, for example, an oxidizable (or nitrided) material such as polycrystalline silicon. The method for forming the second conductive layer 21 6a is, for example,

Page 13 578177 V. Description of the invention (9) Atomic layered layer gas phase / Euzo method or low pressure chemical vapor deposition The thickness of the second conductive f214a is, for example, about 200 angstroms to 500 angstroms. Furthermore, a conformal layer: 216a is formed on the second conductive layer 21 4a, and the material is, for example, nitride or oxide. ^ The material of the dielectric layer 216a is, for example, oxide or nitride. No .: Electricity ί Vapor sinker. Furthermore, the thickness of the fourth dielectric layer 21 6a is, for example, about 50 angstroms or 150 angstroms. After J Ge 疋 5 疋, the material layer 218 is filled in the trench 202, and is ... lower than the top surface of the trench 202 (that is, the base 200 = 8). The material of the material layer 218 is, for example, a photoresist surface 2. The method for forming the material layer 218 is, for example, coating material 2 (not shown) on the fourth dielectric layer 216a, i. The top surface of the photoresist is lower than the top of the groove standard 202 and the material of the helmet u ^ 4 can also be taken as a matter of course. The material layer 218 and the layer 2 are aligned: i = b, shift, except that it is higher than the material. The first dielectric layer 212b, the second conductive layer 2Ua, and the fourth electrode I-layer of the layer 218 include an anisotropic post-cut method, such as thunder. Removed methods include engraving. For example, the plasma etching method, reactive ion etching 21n ^ M FIG. 9, Samiaceae layer 218. After the material layer is removed, a portion of the photoresist is removed, and the remaining light is removed by a wet method. Then, a fifth dielectric layer 22 is formed on the sidewall of the trench 202 and

578177 V. Description of the Invention A sixth dielectric layer 222 is formed on the surface of the first conductive layer 214b of the circuit. The method of forming the fifth dielectric layer 220 and the sixth dielectric layer is, for example, an oxidation method or a nitride method. At this time, since the first conductive layer 208b is made of a high-temperature resistant material that is resistant to nitridation or oxidation, and uses the difference in the ability to resist nitriding or oxidation of the first conductive layer 208b and the second conductive layer 214b Therefore, it is difficult to generate nitrides or oxides on the surface of the first & layer 2 08b, and the third conductive layer 224 can be electrically connected. However, in order to completely prevent the exposed first conductive layer 2081) from being oxidized or nitrided, so that the first conductive layer 208b cannot be electrically connected to the subsequent third conductive layer 224, it is also possible to perform a In a short etching step, an extremely thin oxide layer (or nitride layer) that may be formed thereon is removed by electrical etching or reactive ion etching. Then, please refer to the figure, and fill the trench 202 with a third conductive layer 224 ', wherein the top surface of the third conductive layer m is lower than the top surface of the trench 200 (ie, the surface 200a of the substrate 200). ), And the third conductive layer 2 = electricity: contact. At this time, the third conductive platform is covered with the first conductive 22 V 822 dielectric layer 21 0b, the third dielectric layer 212b, the sixth dielectric layer silicon, and the metal H layer 216b. The material of the tri-conductive layer 224 is, for example, a polycrystalline method such as a substance, a metal compound, or the like. The third conductive layer 224 is formed by a chemical vapor deposition method or a physical vapor deposition method. Wujie refers to FIG. 11 to remove the first thunder, which is higher than the third conductive layer 224, to expose the sidewall of the trench 202. Among them, removing the fifth agent is, for example, a wet last name engraving method. Then, on the side wall of the dew 202, a oxidized layer of Collar Oxide A (Collar Oxide) 22 6 is formed. Colloidal Oxide Page 15 578177 V. Description of the Invention (11) The method for forming the layer 2 2 6 is, for example, a thermal oxidation method or a chemical vapor deposition method. Then, a part of the collar oxide layer 226 is removed to expose the surface of the third conductive layer 224, and a method of removing the collar oxide layer 2 2 6 includes an anisotropic etching method, such as a plasma etching method and a reactive property. Ion engraving and so on. Next, a trench 24 is formed to fill the trench 202, and the fourth conductive layer 228 is in electrical contact with the third conductive layer 224. The material of the fourth conductive layer 228 is, for example, polycrystalline silicon, metal silicide, metal compound, or the like. The method for forming the fourth conductive layer 228 is, for example, a chemical vapor deposition method or a physical vapor deposition method. After that, etch back is performed to remove the fourth conductive layer 2 2 8 outside the trench 20 2, and a part of the sidewall of the top of the trench 20 2 is exposed. Next, a fifth conductive layer 230 is formed to fill the trench 202, and the fifth conductive layer 230 is in electrical contact with the fourth conductive layer 228. The material of the fifth conductive layer 23 is, for example, polycrystalline silicon, metal silicide, metal compound, or the like. The fifth conductive layer 23 is formed by, for example, a chemical vapor deposition method or a physical vapor deposition method. Because the first conductive layer 208b, the third conductive layer 224, the fourth conductive layer 228, and the fifth conductive layer 230 constitute an electrode above the trench capacitor; and the second conductive layer 21 4b and the doped region 204 constitute a trench type The electrode below the capacitor. 7 is two parts of the upper electrode body (the fourth conductive layer 228, the fifth conductive layer) (the first conductive layer 208b, the first: the conductive layer 224); and the snow support can be conductive. ^ 9ηη, ^ The lower electrode can be the lower electrode body (the bottom of the trench 202 extends to the bird channel heterogeneous region 204, the second conductive layer 214b) and a plurality of protrusions (the doped region 204 of the fish wall, the second conductive Layer 214b). The protrusions of the electrode and the protrusions of the lower electrode are alternately arranged, and

P.16 578177 V. Description of the invention (12) = (The first-interventional layer, the second dielectric layer 2iob, the third dielectric layer 212b, the fourth, the electrical layer 216b, the fifth dielectric 222) It is set at the upper electrode and the next generation of the main power increase state of the next day is known to those skilled in the art and will not be repeated here. In the above embodiments, the conductive layer and the dielectric layer of the trench capacitor of the present invention are deposited by the atomic layer chemical method and the Shih i Φ β Φ Φ phase deposition method, so each conductive layer and; !! The thickness of the electrical layer is very thin, so that a trench capacitor composed of multiple conductive layers and dielectric layers can be formed under the limitation of the component size design, which can increase the capacitance of the capacitor. Moreover, in the above embodiment, the lower electrode system is described by taking the formation of four as an example, and the upper electrode system is described by taking the formation of three protrusions as an example. Of course, the present invention can also be applied to the substrate 2 in the step of FIG. 〇〇: After forming a conformal second conductive layer 21 "and a conformal fourth dielectric layer 21 6a, remove part of the second conductive layer 214a and the fourth dielectric layer 216a (as shown in Fig. 7). After the second conductive layer 2Ha and the fourth dielectric layer 216a) in the area a, only the second conductive layer 2m on the sidewall of the trench 202 is left, and the fourth dielectric layer 216a is removed. Part of the method of the second conductive layer 21 "and the third dielectric layer 21a includes anisotropic etching, such as plasma etching, reactive ion etching, and the like. Next, the steps of FIGS. 3 to 7 are performed. Then repeat the steps of removing a part of the second conductive layer 214a and the fourth dielectric 21 6a and performing the steps of FIGS. 3 to 7 and then the subsequent steps (FIGS. 8 to 11). Forming a trench capacitor including an electrode having four or more protrusions and an electrode having three or more protrusions

578177 V. Description of the invention (13) The above description The trench of the present invention is a method for manufacturing a capacitor The structure of the trench capacitor of the present invention. Fig. 1 to Fig. 2 are cross-sectional views showing the structure of a trench capacitor of the present invention. Please refer to Fig. 12 for the capacitor of the present invention formed in the substrate 300. The trench capacitor of the present invention is composed of a lower electrode 302, an electrode 304, and a dielectric layer 306. The lower electrode 302 is provided in the substrate 300, and is formed of, for example, a lower electrode body 304a and a plurality of protruding portions 304b. The lower electrode body 300 is disposed in the substrate 300. One end of the plurality of protrusions 302b is connected to the lower electrode body 302, and the other end of the plurality of protrusions 302b extends from the lower electrode body 302a in the first direction. The shape of the protruding portion 302b is, for example, a bump having a rectangular shape, a polygonal shape, or an irregular shape. The upper electrode 304 is disposed in the substrate 300 and is located at a relative position extending from the lower electrode 3002 in the first direction. For example, the upper electrode 304 is composed of the upper electrode body 304a, the conductor layer 304c, and a plurality of protrusions 30. 4b. The upper electrode body 304a is disposed above the lower electrode 302. The conductive layer 304c is disposed above the upper electrode body 304a and is connected to the upper electrode body 304a. One end of the plurality of protrusions 304b is connected to the upper electrode body 304a, and the other end of the plurality of protrusions 304 "extends from the upper electrode body 304a to the second direction, and the second direction is opposite to the first direction Therefore, the protruding portion 304b of the upper electrode 304 is alternately arranged with the protruding portion 30b of the lower electrode 302. The shape of the protruding portion 3 0 4b is, for example, a convex shape such as a rectangle, a polygon, or an irregular shape. The dielectric layer 306 is provided between the upper electrode 304 and the lower electrode 302. In the above-mentioned trench capacitor, the plurality of protrusions of the upper electrode and the lower page 18 578177 V. Description of the invention ^ ---- The electrode The dimensions of multiple protrusions are added in an alternating arrangement, so you can change the size and number of the aforementioned protrusions without increasing the #, shape, that is, the mouth J 大 ψδ 4_ 秘 又 人The surface area of the depositor ^ 5 U electric valley device 'further increased the capacitor output $ ^' In the above embodiment, the lower electrode 302 is formed with four protrusions} Depending on the actual needs, different numbers of examples can be set to make the same 'upper electrode 304' It has three protruding parts as the actual part. Of course, Brother Yue 'can also set different number of protruding restrictions according to actual needs ::: 发: 月 has been disclosed as above with a preferred embodiment, but it is not used to converge "= = Those who do not depart from the spiritual garden of the present invention should consider and embellish the _: Therefore, the protection of the present invention is defined by the scope of the patent application. 578177 Brief description of the drawing Figure 1 shows a schematic cross-sectional view of the structure of a conventional trench capacitor. Figures 2 to 11 show the manufacturing process of a trench capacitor according to a preferred embodiment of the present invention. Schematic diagrams; and FIG. 12 is a cross-sectional diagram showing the structure of a trench capacitor according to a preferred embodiment of the present invention. [Illustration of diagrammatic symbols] 100, 200, 300: substrate 10, 2, 3 0 2: lower electrode 104, 30 6: dielectric layer 106, 304: upper electrode 108, trench capacitor 200a: surface 202: trench 2 0 4: doped region 2 2 6: collar oxide layers 206 a and 206 b: first dielectric layers 208 a and 208 b: first conductive layers 210 a and 210 b: second dielectric layers 212 a and 212 b: third dielectric layer 214a, 214b: second conductive layers 216a, 216b: fourth dielectric layer 2 1 8: material layer 220: fifth dielectric layer

Page 578177 Brief description of the drawings 222: The sixth dielectric layer 224: The third conductive layer 228: The fourth conductive layer 230: The fifth conductive layer 302a: The lower electrode body 302b, 304b: The protruding portion 304a: The upper electrode body 304c : Conductor layer

Page 21

Claims (1)

578177 VI. Scope of patent application 1. A method for manufacturing a trench capacitor, the method includes: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a doped region in the substrate And the doped region is located in the substrate at the bottom of the trench, and a portion of the doped region extends to the sidewall of the trench; (d) a first dielectric layer and a first conductive layer are sequentially formed in the trench; Layer and a second dielectric layer and the first dielectric layer, the first conductive layer and the second dielectric layer do not fill the trench; (e) removing part of the second dielectric layer, the first dielectric layer A conductive layer and the first dielectric layer, leaving only the second dielectric layer, the first conductive layer, and the first dielectric layer on the trench sidewall; (f) forming a trench on the trench sidewall; A third dielectric layer, and the third dielectric layer does not fill the trench; (g) a second conductive layer and a fourth dielectric layer are sequentially formed in the trench, and the second conductive layer and the The fourth dielectric layer does not fill the trench; (h) a material layer is filled in the trench, and the top surface of the material layer is lower than the trench Top surface; (i) removing the first dielectric layer, the first conductive layer, the second dielectric layer, the third dielectric layer, the second conductive layer, and the fourth layer higher than the material layer A dielectric layer; (j) removing the material layer; (k) forming a fifth dielectric layer on a side wall of the trench, and forming a sixth dielectric layer on the exposed second conductive layer; and Page 22 578177 VI. Scope of patent application The third conductive layer (1) forms a third conductive layer in the trench and is in electrical contact with the first conductive layer. The method for manufacturing a trench capacitor, wherein the material of the f-th conductive layer is one selected from the group consisting of an anti-oxidation metal compound, an anti-nitridation metal compound, etc. 3. As described in item 丨 of the scope of the patent application A method for manufacturing a trench capacitor, wherein the heat-resistant temperature of the first conductive layer is higher than 1 200 degrees Celsius. 4. The method for manufacturing a trench capacitor as described in the first item of the patent scope of the patent, wherein the first conductive layer The material of the layer includes titanium nitride. 5 · The manufacturing method of the trench capacitor according to item 1 of the scope of the patent application, wherein the method of forming the fifth dielectric layer and the sixth dielectric layer is selected from the oxidation method And nitriding method, etc. 6 · The manufacturing method of the trench capacitor as described in the first item of the patent application 'wherein the method of forming the third dielectric layer includes: · forming a conformal shape of the substrate on the substrate Third dielectric And removing part of the third dielectric layer, leaving only the third dielectric layer on the side wall of the trench. 7. The method for manufacturing a trench capacitor as described in item 1 of the patent application scope, wherein (1) Afterwards, the method further includes: forming a collar oxide layer on a side wall of the trench; and forming a fourth conductive layer to fill the trench. 8. Manufacturing of a trench capacitor as described in item 1 of the scope of patent application Method to form a first dielectric layer, a second dielectric layer, a third dielectric layer, a fourth dielectric layer, a first / conductive layer and a second conductive layer Page 23 578177 Methods include atomic layer chemical vapor deposition. As described in item 1 of the scope of the patent application, where the first dielectric layer, the first method, the electric layer method package, etc. are formed, the dielectric layer, the third dielectric layer, the fourth dielectric layer, the first dielectric layer, A low-pressure chemical vapor deposition method of a conductive layer and the second conductive layer is a long-term conductive layer. Ancient, 10. The manufacturing method of the trench capacitor described in item 丨 of the scope of the patent application, wherein after step (g) and before step (h), it further includes: " (m) removing part of the second conductive Layer and the fourth dielectric layer, leaving only the second conductive layer and the fourth dielectric layer on the trench sidewall; (η) performing steps (d) to (g); and repeating steps ( m) and step (η). 1 1 · The method for manufacturing a trench capacitor as described in item 1 of the patent claim, wherein the material of the material layer includes a photoresist. 12. A trench capacitor, the trench capacitor includes: a lower electrode, the lower electrode is disposed in a substrate, the lower electrode includes: a lower electrode body, the lower electrode body is disposed in the substrate; a plurality of first protrusions A first end of the first protrusions is connected to the lower electrode body, and a second end of the first protrusions extends from the lower electrode in a first direction; an upper electrode is disposed on the substrate And the upper electrode is located at a relative position extending from the lower electrode toward the first direction, the upper electrode includes: an upper electrode body, the lower electrode body is disposed in the far base ' Page 24 578177 6. The scope of patent application is a plurality of second protrusions, the first ends of the second protrusions are connected to the upper electrode body, and the second ends of the second protrusions are from the upper electrode body toward a first It extends in two directions, and the second protrusions are arranged alternately with the first protrusions; and a dielectric layer is disposed between the upper electrode and the lower electrode. 1 3. The trench capacitor according to item 12 of the scope of the patent application, wherein the second direction is an opposite direction to the first direction. 1 4. The trench capacitor according to item 12 of the scope of the patent application, wherein the shape of the first protrusions is one selected from the group consisting of bumps such as rectangular, polygonal, and irregular shapes. 15. The trench capacitor according to item 12 of the scope of patent application, wherein the shape of the second protrusions is one selected from the group consisting of rectangular, polygonal, irregularly shaped bumps and the like. Page 25