TW575903B - Adjusting method of phase-match mapping in lithography process - Google Patents
Adjusting method of phase-match mapping in lithography process Download PDFInfo
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- TW575903B TW575903B TW91113777A TW91113777A TW575903B TW 575903 B TW575903 B TW 575903B TW 91113777 A TW91113777 A TW 91113777A TW 91113777 A TW91113777 A TW 91113777A TW 575903 B TW575903 B TW 575903B
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本务明係有關於一種微影製程 在微影製程中調整相配映射之方法 且特別是有關於—種 在半導體積體電路的製造過程中,微影成像 (lithography)製程無疑地居於極重要的地位,吾人萨由 此一製程方可將設計的圖案精確地定義在光阻層上,% 利用蝕刻程序將光阻層的圖案轉移到半導體基底上而二 所需之線路構造。一般而言,微影製程主要包括塗底于 (priming)、光阻塗m(c〇ating)、預烤(或稱軟烤)、曝 (expose)、曝後處理、顯影、以及硬烤等數個步驟。其-2,曝光程序之解析度(res〇iution)良窳尤為元件積集度 旎否更進一步提昇的關鍵因素,各大半導體製造廠無不^ 極投入研發以謀求更上層樓。 μ 、 從光學原理上分析,曝光機台的解析度與所使用光源 的波長成一正比關係,亦即曝光光源的波長越短,其解析 度也就越小。以目前商業化的半導體製程而言,曝光機台 已由以往使用436nm(g-line)、365 (i-line)等波長的光 源’演進至使用次波長(sub-wave 1 eng th)之248nm甚或更 短波長之深紫外光(deep UV)範圍的光源,以因應元件積 集度不斷增加的需求。現今微影技術具有覆蓋(〇verlay) 規格以確保不同的薄膜層間能夠堆疊(相配)的很好。堆疊 的誤差主要有兩項因素,一是光學投影系統之誤差,另一 疋光罩對光罩間疊對之誤差。目前光罩對光罩間疊對之誤 差的計异僅只在光罩之圖案區及禁止區之外圍加入參考標 計算誤差。This book is about a lithography process to adjust the matching mapping in the lithography process, and in particular, it is about a kind of lithography process that is undoubtedly very important in the manufacturing process of semiconductor integrated circuits. As a result, our company can accurately define the designed pattern on the photoresist layer through this process.% The pattern of the photoresist layer is transferred to the semiconductor substrate by the etching process, and the required circuit structure. Generally speaking, the lithography process mainly includes priming, photocoating (coating), pre-baking (or soft baking), exposure, post-exposure processing, development, and hard baking, etc. Several steps. Its -2, the resolution of the exposure process (resoiution) is good, especially the component accumulation. Whether it is a key factor for further improvement, all major semiconductor manufacturers have invested heavily in research and development to seek higher levels. From the analysis of optical principles, the resolution of the exposure machine is proportional to the wavelength of the light source used, that is, the shorter the wavelength of the exposure light source, the smaller its resolution. In terms of the current commercial semiconductor process, the exposure machine has evolved from using light sources with wavelengths such as 436nm (g-line) and 365 (i-line) to 248nm using sub-wave 1 eng th. Light sources in the deep UV range, or even shorter wavelengths, in response to increasing demand for component accumulation. Today's lithography technology has overlay specifications to ensure that different film layers can be stacked (matched) well. There are two main factors for stacking errors, one is the error of the optical projection system, and the other is the error of the stacking of the mask to the mask. At present, the difference between the reticle and reticle error is only calculated by adding reference marks to the periphery of the pattern area and the prohibited area of the reticle.
0503-7672TWf ; TSMC2001-0972 ; YCCHEN.ptd 第 4 頁 5759030503-7672TWf; TSMC2001-0972; YCCHEN.ptd page 4 575903
第1圖係顯示傳統之具有參考標記之光罩,其在一光 罩基板1 0 ’例如是石英(quartz)玻璃上,形成一圖案區 ^ ’例如是鉻(Cr)金屬層構成之光罩圖案。標號14為禁止 品,其上不能有任何圖案。而在禁止區丨4之外圍則加入參 考標記1 6 ’參考標記丨6之用途是來計算光罩對光罩間疊對 =誤差,例如用來計算定義主動區圖案之光罩與定義閘極 f'案之光罩間疊對之誤差。第2圖係顯示使用上述參考標 己^求得之兩光罩間疊對之誤差,其係以2 7 χ 2 7之陣列來 ”’員不。第3圖係顯示以數字表示第2圖之兩光罩間疊對之誤 ,,單位為奈米,其中第34圖表示γ方向之誤 、 ,方向之誤差。由第2及3圖可知上述在禁止區 方法並不能精確地表示出光罩對光罩間之 只際誤差,此外,第4圖係顯示另外兩光罩間疊對之 :’在標號20之區域中可看出呈現某一傾向 而 中央部分則誤差很少。 左而在 為了解決上述問題,本發明之目的 程中調整相配映射之方法,以庐得古产 /、微影製 間疊對之誤差資料。 讀^精確性之光單對光罩 囚此,奉發 方法,包括以下步驟。首先,提供一光罩,詨 圖案區。接著,於該圖案區之一办白 Μ尤罩具有一 記。然後,取得該參考標記之座標以作為^ ^參考標 參考值。最後,去除該參考標記。 ^整相配映射之 應用本發明之在微影製程 中調整相配映射之方法 以Figure 1 shows a conventional mask with a reference mark, which forms a pattern area on a mask substrate 10 ', such as quartz glass, such as a mask composed of a chromium (Cr) metal layer. pattern. Numeral 14 is a prohibited article, and there must be no pattern on it. The reference mark 1 6 is added to the periphery of the prohibited area. The reference mark 6 is used to calculate the overlap between the photomask and the photomask = error. For example, it is used to calculate the photomask defining the active area pattern and define the gate. The error of overlap between the masks in the f 'case. Figure 2 shows the overlap error between the two photomasks obtained by using the above reference standard, which is based on a 2 7 χ 2 7 array. "'No.' Figure 3 shows the digital representation of Figure 2 The error of the overlap between the two photomasks is in nanometers. Figure 34 shows the error in the γ direction, and the error in the direction. From Figures 2 and 3, it can be seen that the above method in the prohibited area cannot accurately represent the photomask. For the error between the masks, in addition, Figure 4 shows that the other two masks overlap each other: 'In the area labeled 20, there is a certain tendency, and the error is small in the central part. In order to solve the above problems, the purpose of the present invention is to adjust the matching mapping method in order to use the error data of the ancient and / or lithographic interlayers. Read ^ Accuracy of a single pair of photomasks. The method includes the following steps. First, a mask and a pattern area are provided. Next, a white M mask is provided in one of the pattern areas. Then, the coordinates of the reference mark are obtained as the reference value of the reference mark. Finally, the reference mark is removed. ^ The application of the matching mapping Matches Ming adjustment method of mapping to the lithography process
^/5903 五 發明說明(3) 取知两精確性之光星 些高精確性之間疊對之誤差資料,可利用此 放大縮小量、座“产光學投影系統之區塊旋轉、 正上述光學投影r交度及偏移量變化。藉由修 對之誤差,辦加掣::數可有效補償晶圓上兩薄層間疊 左 〜加製程的良率。 貫施例 接下微影製程中調整相配映射之方法, 牛奴隹貝%例,作詳細說明。 光罩美^ 1:百先如第5Α圖所示,係提供-光罩,例如在-尤卓基板1 0 〇,例如县sf ^ 區102,例如是鉻(Cr)公居quartz)玻璃上,形成一圖案 禁止區…不成之光罩圖案。標號104為 具有夹考;Λ圖案。而在禁止區104之外圍則 ς ^ ° 06。才示唬108為圖案區102中之一區塊。 之圖ί β”丄區塊108之放大圖,其中標號110為不透明 之圖案,標號112則為透明之空白區。 您 接著,請參照第5C圖,於空白區112中加入參考標記 甘、:曰、光阻層(未顯示),遮蔽層可為鉻金屬層。 程戽:二-以參f t:己圖案對光阻層施行-光束曝光顯影 μ 。接者’ m後之光阻層作為罩幕,蝕刻遮蔽層, 错以將光阻層之圖案轉移至遮蔽層。最後,去除光阻層, 即完成參考標記114之製作。 第5D圖係顯示以第5C圖之方法在圖案區1〇2中加入 數個參考標記11 4。^ / 5903 Explanation of the five inventions (3) Obtain the error data of the high accuracy of the two precise light stars. You can use this magnification and reduction amount, the block rotation of the optical projection system, and the above optical The change in the projection r's degree of crossover and offset. By correcting the error, the addition of the number :: can effectively compensate for the yield of the two thin layers on the wafer. The yield rate of the addition process is continued. The method of adjusting the matching mapping is described in detail in the following example. Mask beauty ^ 1: Baixian, as shown in Figure 5A, is provided with a -mask, such as the -Yuzhuo substrate 100, for example The county sf ^ area 102, for example, is a chromium (Cr) public residence (quartz) glass, forming a pattern forbidden area ... incomplete mask pattern. The reference number 104 is with a clip test; the Λ pattern. On the periphery of the forbidden area 104 is ς ^ ° 06. It is shown that 108 is one of the blocks in the pattern area 102. The picture is an enlarged view of the β "丄 block 108, where the number 110 is an opaque pattern and the number 112 is a transparent blank area. Next, please refer to FIG. 5C, and add a reference mark Gan,:, and a photoresist layer (not shown) in the blank area 112. The shielding layer may be a chrome metal layer. Cheng Yi: Two-implementation of the photoresist layer with a reference f t: pattern-beam exposure and development μ. The photoresist layer after the 'm' is used as a mask, and the masking layer is etched to transfer the pattern of the photoresist layer to the masking layer. Finally, the photoresist layer is removed to complete the production of the reference mark 114. Fig. 5D shows the method of Fig. 5C in which several reference marks 11 4 are added to the pattern area 102.
575903 五、發明說明(4) 俨卞:、5取仔所有參考標記1 1 4之座標。利用此些參考 裇圮之座標以取得光罩間 最後,铁夂昭楚π门 差貝科0 1 .. 明4…、第5£:圖,去除空白區112中之參考標記 ’:如於基板100上形成一罩幕層12〇露出參考標記 夕同’安以餘刻製程去除參考標記114。如此即將第5D圖中 之圖案區102中所有參考標記U4去除。 _ f複亡述方法可以在另一光罩之圖案區中形成參考標 ^4 Ϊ侍其上參考之標記之座標。然後,可藉由兩光罩 ^ ^ ^°己以取彳于鬲精確性之光罩對光罩間疊對之誤差 負料。 參 區力f Si?圖係顯不利用習知方法及本實施例之於圖案 ::i二ί:1…斤得到之量測資料之比較。*圖中可以 貝施例之方法可獲得高精確性之光罩對光罩門 疊對之誤差資料。 罐庄急尤皁訂尤罩間 猎由取得面精確性之伞罢料止@ 可利用此此高精確性間…誤差資料, 塊旋轉、;貧料t修正光學投影系統之區 、、、里、座標糸度篁、直交度及偏移旦傲i 。藉由修正上述光學投影系統之參數可化 =層間疊…差,例如本發明之方;取=== 圖案之光罩與疋義閘極圖案之光罩間疊對之 °° 差資料,之後利用此些誤差資料藉由軟體計算=修^之誤 光學投影系、统之參數,即可以有效補償動t述 極間疊對之誤差。 ι勒&與閘 第7圖係顯示舉例說明利用本實施 /友所達到之575903 V. Description of the invention (4) 俨 卞: 5 Take the coordinates of all the reference marks 1 1 4 of the child. Use the coordinates of these reference beams to obtain the final mask room. The iron beams show the π gate difference Beco 0 1 .. Ming 4 ..., 5 £: Picture, remove the reference mark in the blank area 112: A cover layer 12 is formed on the substrate 100 to expose the reference mark, and the reference mark 114 is removed by a post-cut process. In this way, all reference marks U4 in the pattern area 102 in FIG. 5D are removed. _ f Resurrection method can form a reference mark in the pattern area of another photomask ^ 4 Ϊ Serve the coordinates of the reference mark on it. Then, the two masks ^ ^ ^ ° can be used to obtain the negative accuracy of the mask-to-mask overlap error that is not accurate. The reference area f Si? Is a comparison of the measured data obtained from the conventional method and the pattern :: i 二 ί: 1 ... jin in this embodiment. * The figure can be used to obtain the high-accuracy mask-to-mask door error data. Canzhuang Jiyou soaps and hoods are hunted by the umbrella to obtain the accuracy of the surface @ You can use this high accuracy time ... error data, block rotation ,; poor material t correction optical projection system area , Coordinate 糸 degrees 篁, orthogonal degrees and offset dan i. By modifying the parameters of the above-mentioned optical projection system, it is possible to convert = layer overlap ... difference, such as the method of the present invention; take the == difference data of the overlap between the mask of the patterned mask and the mask of the gate electrode, and then By using these error data to calculate the parameters of the error optical projection system and system by software, it is possible to effectively compensate the errors of the overlap between the moving poles.勒勒 & and gate Figure 7 shows an example using the implementation / Friends
575903 五、發明說明(5) 功效之示意圖,圖中A、β、c、D四個點位於光罩圖案外 部,其疊對誤差為l00nm、E及!^點位於光罩圖案内部,其 疊對誤差為50nm。若只測量a、B、C、D四個點且修正 0 · 8 p p m以使彳于剩餘誤差由1 〇 〇 n ^縮減到4 n ^,然而如此修正 的話卻使得E及F點剩餘誤差由50nm增加到82nm。若使用本 實施,之方法測量A、B、C、D、E、F六個點且修正〇.5ppm 可使得A、B、C、D之剩餘誤差由100nra縮減到4〇nm,E及? 點剩餘誤差由5〇nm增加到70nm。因此,使用本實施例之方 償兩光罩間疊對之誤差’如上述說明可將圖 案内邛之誤差由82nm減少到7〇nm。 者,ί ί:::f用之物質材料,並不限於實施例所引述 者,、此由各種具恰當特性之物質和形成方法換,且 本發明之結構空間亦不限於實施例引用之尺、 本發明雖已以較佳實施例揭露如上,宜=用 制本發明。任何熟悉此技藝者,*不脫離= 限 範圍内當可做些許之更動與潤飾。因此夫X ,n ^ 圍合顽德夕由4蛮41丨# 一 此本發明之保護範 圍田視後附之申睛專利範圍所界定者為準。575903 V. Description of the invention (5) Schematic diagram of the effect. In the figure, the four points A, β, c, and D are located outside the mask pattern, and their overlapping errors are 100 nm, E, and! ^ Points are located inside the mask pattern. The pair error is 50nm. If only four points a, B, C, and D are measured and corrected by 0.8 ppm to reduce the residual error from 100n ^ to 4 n ^, however, this correction makes the residual error at points E and F from 50nm increased to 82nm. If this implementation is used, the method measures six points A, B, C, D, E, and F and corrects 0.5 ppm to reduce the remaining errors of A, B, C, and D from 100nra to 40nm, E and? The dot residual error increased from 50 nm to 70 nm. Therefore, using the compensation of this embodiment to compensate for the error of the overlap between the two photomasks' as described above can reduce the error in the pattern from 82nm to 70nm. The materials used in ί ::: f are not limited to those cited in the examples, but are replaced by various materials and forming methods with appropriate characteristics, and the structural space of the present invention is not limited to the scales cited in the examples. Although the present invention has been disclosed as above with the preferred embodiments, it is appropriate to make the present invention. Anyone who is familiar with this skill, * do not depart from = limit can be changed and retouched within the range. Therefore, the husband X, n ^ enclosing the stubborn princes is defined by the scope of the present invention. The field of protection of the present invention is subject to the scope of the patent application attached to the eyes.
575903 圖式簡單說明 為讓本發明之上述目的、特徵及優點能更明顯易懂, 下文特舉較佳實施例,並配合所附圖式,做詳細說明如 下。 第1圖係顯示傳統之具有參考標記之光罩。 第2圖係顯示使用上述參考標記所求得之兩光罩間疊 對之誤差。 第3 A圖係顯示Y方向之誤差。 第3B圖係顯示X方向之誤差。 第4圖係顯示另外兩光罩間疊對之誤差。 第5 A至5E圖係顯示本發明實施例之製程方法。 第6A及6B圖係顯示利用習知方法及本實施例之於圖案 區加入參考標記,所得到之量測資料之比較。 第7圖係顯示舉例說明利用本實施例之方法所達到之 功效之示意圖。 符號說明 1 0、1 0 0〜光罩基板; 12、102〜圖案區; 1 4、1 0 4〜禁止區; 1 6、1 0 6、1 1 4〜參考標記; 108〜圖案區102中之一區塊; 1 1 0〜不透明之圖案; 112〜透明之空白區; 120〜罩幕層; 20〜區塊。575903 Brief description of the drawings In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are described below in detail with the accompanying drawings as follows. Figure 1 shows a conventional mask with reference marks. Fig. 2 shows the overlap error between the two photomasks obtained by using the above reference marks. Figure 3 A shows the error in the Y direction. Figure 3B shows the error in the X direction. Figure 4 shows the overlap error between the other two masks. Figures 5A to 5E show the manufacturing method of the embodiment of the present invention. Figures 6A and 6B are comparisons of the measured data obtained by adding a reference mark to the pattern area using a conventional method and this embodiment. Fig. 7 is a schematic diagram illustrating the effect achieved by the method of this embodiment. Explanation of symbols 10, 100 ~ photomask substrate; 12, 102 ~ pattern area; 1, 4, 104 ~ forbidden area; 1, 6, 10, 1 1 4 ~ reference mark; 108 ~ pattern area 102 One block; 110 ~ opaque pattern; 112 ~ transparent blank area; 120 ~ cover layer; 20 ~ block.
0503-7672TWf ; TSMC2001-0972 ; YCTHEN.ptd 第9頁0503-7672TWf; TSMC2001-0972; YCTHEN.ptd page 9
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