TW575892B - Semiconductor device and its manufacturing method, and semiconductor manufacturing apparatus - Google Patents

Semiconductor device and its manufacturing method, and semiconductor manufacturing apparatus Download PDF

Info

Publication number
TW575892B
TW575892B TW90106793A TW90106793A TW575892B TW 575892 B TW575892 B TW 575892B TW 90106793 A TW90106793 A TW 90106793A TW 90106793 A TW90106793 A TW 90106793A TW 575892 B TW575892 B TW 575892B
Authority
TW
Taiwan
Prior art keywords
electrode
inductor
amplification
air
electrodes
Prior art date
Application number
TW90106793A
Other languages
Chinese (zh)
Inventor
Toshihiko Kyogoku
Tadashi Kodu
Kiyoharu Mochiduki
Sakae Kikuchi
Akio Ishidu
Original Assignee
Hitachi Ltd
Hitachi Tobu Semiconductor Ltd
Akita Electronics Systems Co L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2001/002224 external-priority patent/WO2002052589A1/en
Application filed by Hitachi Ltd, Hitachi Tobu Semiconductor Ltd, Akita Electronics Systems Co L filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW575892B publication Critical patent/TW575892B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • H01F17/02Fixed inductances of the signal type  without magnetic core
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/29Terminals; Tapping arrangements for signal inductances
    • H01F27/292Surface mounted devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/645Inductive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/02Feeding of components
    • H05K13/028Simultaneously loading a plurality of loose objects, e.g. by means of vibrations, pressure differences, magnetic fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6644Packaging aspects of high-frequency amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19102Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Amplifiers (AREA)

Description

經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(1 ) 本發明係關於,半導體裝置及其製造方法,以及半導 體製造裝置’例如,應用在半導體裝置之將多數放大器(半 導體放大元件)縱列連接多級而構成之多級高頻電力放大裝 置(高頻電力放大模組)之製造技術,及裝配該高頻電力放大 裝置之行動電話機等之無線電通信裝置(電子裝置)時,十分 有效之技術。 汽車電話機、行動電話機等之無線電通信裝置所使用 之高頻電力放大裝置,係將由半導體放大元件(電晶體)構成 之多數放大器,縱列連接成兩級或3級之多級架構。多級 架構之最後級之放大器(最後放大級)成爲輸出級。同時,爲 了調整電路阻抗,在各處裝配有電感器。 高頻電力放大裝置之被要求應具備之特性是,高效率 且高增益、小型且低成本。而且,由於是攜帶式使用之特 異性,不同之使用條件會使天線之阻抗發生很大之變化, 成爲負載不匹配而發生反射,有時會在最後級之放大元件( 半導體放大元件)加上很大之電壓。放大元件必須考慮能承 受此高壓之破壞耐壓。 第33圖係表示本發明人等在本發明之前先檢討之局頻 電力放大裝置之電路架構之方塊圖。此高頻電力放大裝置 係可以放大稱作 GSM (Global System for Mobile Communication)及 DCS (Digital Cellular System)之兩種通柄 系統之雙頻帶用之高頻電力放大裝置。 此高頻電力放大裝置1具有,外部電極端子之GSM用 輸入端子(PinGSM①)、控制端子(Vapc②)、電源電壓Vdd 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇><297公釐) ---------^一------丁______ (請先閱讀背面之注意事項再填寫本頁) 575892 A7 B7 五、發明説明(2 ) 之一方之電原電壓端子(Vddl③)、GSM用輸出端子 (請先閱讀背面之注意事項再填寫本頁} (PoutGSM④)、DCS用輸出端子(PoutDCS⑤)、電源電壓 Vdd之另一方之電源電壓端子(Vdd2⑥)、通信頻帶切換用端 子(Vctl⑦)、DCS用輸入端子(PinDCS⑧)、及未圖示之接 地電壓端子(GND)。 DCS及GSM之通信系統均係3級放大架構。DCS放大 系統係由以1st、2nd、3rd所示之放大級(ampl、amp2、 amp3)構成,GSM放大系統係由以1st、2nd、3rd所示之放 大級(amp4、amp5、amp6)構成。各放大級由未圖示之電場 效果電晶體(FET)所形成。 在這種架構,PinDCS⑧係連接在ampl,PoutDCS⑤係 連接在amp3。而PinGSM①係連接在amp4,PoutGSM④係 連接在amp6。Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 575892 A7 B7 V. Description of the Invention (1) The present invention relates to semiconductor devices and manufacturing methods thereof, and semiconductor manufacturing devices. For example, most amplifiers (semiconductor amplifiers) used in semiconductor devices (Component) Manufacturing technology of a multi-stage high-frequency power amplifier (high-frequency power amplifier module) composed of multiple stages connected in series, and a radio communication device (electronic device) such as a mobile phone equipped with the high-frequency power amplifier Very effective technology. High-frequency power amplifiers used in radio communications equipment such as automobile telephones and mobile phones are mostly amplifiers composed of semiconductor amplifying elements (transistors), which are connected in columns to form a two-stage or three-stage multi-stage architecture. The final stage amplifier (last amplifier stage) of the multi-stage architecture becomes the output stage. At the same time, in order to adjust the circuit impedance, inductors are installed everywhere. The characteristics required of a high-frequency power amplifier are high efficiency, high gain, small size, and low cost. In addition, due to the specificity of portable use, the impedance of the antenna will change greatly due to different conditions of use, which will cause reflection due to load mismatch. Sometimes it will be added to the final amplifier element (semiconductor amplifier element). Great voltage. Amplifying components must be able to withstand the breakdown voltage of this high voltage. Fig. 33 is a block diagram showing the circuit architecture of the local-frequency power amplifier device that the inventors reviewed before the present invention. This high-frequency power amplifier is a high-frequency power amplifier for dual-band systems that can amplify two through-handle systems called GSM (Global System for Mobile Communication) and DCS (Digital Cellular System). This high-frequency power amplifier device 1 includes an external electrode terminal for a GSM input terminal (PinGSM①), a control terminal (Vapc②), and a power supply voltage Vdd. This paper is sized to the Chinese National Standard (CNS) A4 specification (21〇 > < 297 (Mm) --------- ^ 一 ------ 丁 ______ (Please read the notes on the back before filling out this page) 575892 A7 B7 V. Electricity of one of the parties to the description of the invention (2) Original voltage terminal (Vddl③), GSM output terminal (please read the precautions on the back before filling in this page) (PoutGSM④), DCS output terminal (PoutDCS⑤), the other power supply voltage terminal (Vdd2⑥), Vdd, Communication frequency band switching terminal (Vctl⑦), DCS input terminal (PinDCS⑧), and ground voltage terminal (GND) not shown. The communication systems of DCS and GSM are all 3-level amplification architectures. The DCS amplification system consists of 1st, The amplification stages (ampl, amp2, amp3) shown in 2nd and 3rd are composed, and the GSM amplification system is constituted by the amplification stages (amp4, amp5, amp6) shown in 1st, 2nd, and 3rd. Each amplification stage is composed of unillustrated ones. Formed by an electric field effect transistor (FET). This architecture, PinDCS⑧ lines connected ampl, PoutDCS⑤ lines connected amp3. PinGSM① lines and connected amp4, PoutGSM④ lines connected amp6.

Vapc②連接在偏壓電路2 ’问時藉由輸入此Vapc②之 信號控制ampl〜amp6。 經濟部智慧財產局員工消費合作社印製 V d d 1③係經由微帶狀線(m i c r 〇 s t r i ρ 1 i n e) M S 3連接在 amp3,經由微帶狀線MS4連接在amp5,經由電感器L2連 接在amp6。同時,爲了高頻特性之穩定化,以外接方式在 Vddl③連接有一端連接在GND之電容器C1。Vapc② is connected to the bias circuit 2 'and controls ampl ~ amp6 by inputting a signal from this Vapc②. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economy V dd 1③ is connected to amp3 via a microstrip line (micr 〇stri ρ 1 ine) MS3, to amp5 via a microstrip line MS4, and to amp6 via an inductor L2 . At the same time, in order to stabilize the high-frequency characteristics, a capacitor C1 with one end connected to GND is connected to Vddl ③ externally.

Vdd2⑥係經由微帶狀線MSI連接在ampl ,經由微帶 狀線MS2連接在amp2,經由電感器L1連接在amp3。同時 ,爲了高頻特性之穩定化,以外接方式在Vdd2⑥連接有一 端連接在GND之電容器C2。Vdd2⑥ is connected to ampl via a microstrip line MSI, to amp2 via a microstrip line MS2, and to amp3 via an inductor L1. At the same time, in order to stabilize the high-frequency characteristics, a capacitor C2 with one end connected to GND is connected to Vdd2⑥ externally.

Vctl⑦連接在頻帶選擇電路3。此頻帶選擇電路3係 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) · 5 - 575892 A7 ___B7_ 五、發明説明(3 ) (請先閱讀背面之注意事項再填寫本頁) 由源極接地之3個η通道型電場效果電晶體(FET)Q8、Q9、 Q10,及1個電阻器R1所構成。Q8及Q9之閘極端子連接 在Vctl⑦。Q10之閘極端子連接在Q9之汲極端子,汲極端 子則經由電阻器R2連接在amp5之輸出側。Q9之汲極端子 係經由電阻器R1連接在Vdd2⑥。Q8之汲極端子係經由電 感器L3連接在amp3之輸入側。 由供給Vctl⑦之信號切換頻帶,進行DCS通信用之放 大,或GSM通信用之放大。 如第33圖所示之電路架構,GSM電路鍊及DCS電路鍊 之電源線係共用。其結果,形成從3rdFET洩漏之信號通過 電源線回到1 s t F E T之回授環(f e e d b a c k 1 ο ο p)(參照第3 3圖所 不之粗線箭頭),很容易產生振盪。 另一方面,傳統上電感器係使用晶片電感器。但晶片 電感器之直流電阻很大,成爲妨礙,例如行動電話機用之 高頻電力放大裝置(高頻電力放大模組)之輸出及效率之原因 。亦即,晶片電感器在使用於高頻電力放大裝置之電源線 時,需要有例如2A以上之電流容量,成爲特殊規格,致價 格偏高,緊急調度很困難。 經濟部智慧財產局員工消費合作社印製 而市售之空芯線圈之外形尺寸很大,因爲模組之高度 限制,無法裝載。亦即’裝配在高頻電力放大裝置之晶片 電阻器或晶片電容器等晶片型電子零件被稱作丨005製品, 長度爲1mm,寬度及高度爲〇.5mm ,相當小,但市售之空 芯線圈卻較此大很多。 而傳統之晶片電感器之成本也很高,阻礙混合積體電 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 ____B7_ 五、發明説明(4 ) 路裝置之低成本化。亦即,晶片電感器有各種構造,但高 頻電力放大裝置所使用之晶片電感器係以,將線材捲在陶 瓷製之基材構件之構造、以陶瓷爲基材而堆疊Ag、W等導 體而形螺旋構造者,及在陶瓷芯之表面施加電鍍以形成金 屬層,而藉雷射光螺旋狀切割此金屬層之構造者爲主流。 於是,本申請人則爲了達成小型化及降低成本,以及降低 D C電阻,而檢討將導電性良好之金屬線捲成螺旋狀之線圈 ,而做出新線圈(線圈電感器)之提案(曰本國特願2000 -367762號公報)。 若舉一例,此線圈具有,將表面被覆絕緣膜(例如聚乙 烯膜)直徑0.1mm左右之銅線捲成螺旋狀之構造,外徑爲 0.5 6mm左右,長度在〇.9mm左右。在捲成螺旋狀之前,先 將銅線之兩牺部分之絕緣膜去除一'定長度,或不施加絕緣 膜。因此,未被覆絕緣膜之1乃至數圏之捲線部分成爲電 極。此線圈之重量也很輕,只有0.0 7 2 5 m g左右。同時,此 線圈因爲是將銅線捲成螺旋狀,因此較之傳統之具有8nH 之電感,直流電阻ΙΟΟιηΩ之晶片電感器(例如,以雷射光切 割小金屬層使成螺旋狀之構造之1 005 .製品)。 對此,本申請人提案之空芯線圈之電感8ηΗ者之直流 電阻爲20ιηΩ,僅及傳統者之1/5,同時成本也佔優勢。 本申請人使用傳統之散粒物供料器進行裝配,以便將 這種線圈(空芯線圈)裝配進混合積體電路裝置之高頻電力放 大裝置。 但發覺要用傳統之散粒物供料器要將重量很輕之這種 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) -7 - (請先閱讀背面之注意事項再填寫本頁) 訂 -^91. 經濟部智慧財產局員工消費合作社印製 575892 A7 _ _B7_ 五、發明説明(5 ) 線圈穩定供應很困難。 (請先閱讀背面之注意事項再填寫本頁) 半導體製造裝置之散粒物供料器記載在例如「 Matsusita Technical Journal」’ Vol.45 , No. 4 ’ Aug., 1 999 , P86〜P90 。此文獻記載有適合於安裝積層晶片電 容器或角板形晶片電阻等之表面安裝型電子零件之漏斗方 式之散粒物供料器。 第34圖乃至第42圖係有關傳統之散粒物供料器之圖。 如第34圖所示,傳統之散粒物供料器備有:收容散粒物之 散粒物收容箱1 〇、設在上述散粒物收容箱下部之漏斗1 1、 用以引導從上述漏斗1 1取進之散粒物至設在前端之散粒物 供應部1 2之運送軌1 3 〇 散粒物收容箱1 〇呈薄箱型構造,其內底成爲從兩側向 中央集中散粒物之傾斜體1 4。以貫穿此傾斜體1 4之中心狀 配置,將集中至傾斜體1 4之內底部分之散粒物成一列狀態 從散粒物收容箱10取出之漏斗1 1 ,係如第3 5圖所示,由 經濟部智慧財產局員工消費合作社印製 上端有圓錐台凹部15之導件16,及貫穿此導件16具有沿 中心軸引導1個散粒物之引導孔1 7之角形管所成之供應軸 1 8,所構成。爲了使散粒物從供應軸1 8之上端進入引導孔 1 7,上述導件1 6成可上下振動之構造。例如,以大約等於 散粒物之長度(1個衝程:1 st)之3倍左右之振幅振動。 而引導孔1 7係如第36圖所示,呈矩形之截面。供應軸 18之直徑有2.6mm,其中心設有寬度0.63mm、長度0.87mm 之四角形之引導孔17。 以這種散粒物供料器供應0.56mmx0.185mm大小之散粒 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ~_ "~ 575892 A7 _________B7 五、發明説明(6 ) 物之線圈(空芯線圈)9時,如第35圖及第36圖所示,會發 生一些之不良事故。 (請先閱讀背面之注意事項再填寫本頁) 其一是,因筒狀之供應軸18太厚,空芯線圈9會跨在 供應軸18之上端不進入引導孔17 A內之供應不良A。 其二是,當導件1 6降到下方時,圓錐台凹部1 5之傾斜 面與供應軸1 8之外周面之間產生空隙1 9,空芯線圈9夾在 此空隙19內之供應不良B。 其三是,由於空芯線圈9之尺寸也會參差不齊,而因 此,0.53mmx〇.87mm 大小之空芯線圈 9 在 0.63mmx〇.87mmVctl⑦ is connected to the band selection circuit 3. This band selection circuit 3 is based on Chinese paper standard (CNS) A4 specification (210X297 mm). 5-575892 A7 ___B7_ 5. Description of the invention (3) (Please read the precautions on the back before filling this page). Three n-channel field-effect transistors (FETs) Q8, Q9, and Q10 with a source ground are formed by a resistor R1. The gate terminals of Q8 and Q9 are connected to Vctl⑦. The gate terminal of Q10 is connected to the drain terminal of Q9, and the drain terminal is connected to the output side of amp5 via resistor R2. The drain terminal of Q9 is connected to Vdd2 through resistor R1. The drain terminal of Q8 is connected to the input side of amp3 via inductor L3. The frequency band is switched by the signal supplied to Vctl⑦ for DCS communication amplification or GSM communication amplification. As shown in Figure 33, the power lines of the GSM circuit chain and the DCS circuit chain are shared. As a result, a feedback loop (f e e d b a c k 1 ο ο p) formed by a signal leaking from the 3rd FET through a power line to return to 1 s t F E T (refer to the thick line arrow shown in FIG. 33) is easily generated. On the other hand, a conventional inductor uses a chip inductor. However, the DC resistance of the chip inductor is very large, which hinders, for example, the output and efficiency of the high-frequency power amplifier device (high-frequency power amplifier module) used in mobile phones. That is, when the chip inductor is used in a power line of a high-frequency power amplifier device, it needs a current capacity of, for example, 2A or more, which becomes a special specification, the price is high, and emergency dispatch is difficult. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The commercially available air core coils have a large external shape because of the height limitation of the module and cannot be loaded. In other words, chip-type electronic components such as chip resistors or chip capacitors assembled in high-frequency power amplification devices are called 005 products, with a length of 1mm and a width and height of 0.5mm, which are quite small, but are commercially available hollow cores. The coil is much larger than this. The cost of traditional chip inductors is also very high, which prevents the application of Chinese National Standard (CNS) A4 specifications (210X297 mm) for hybrid integrated circuit paper sizes. 575892 A7 ____B7_ V. Description of the invention (4) Low cost of circuit devices . That is, the chip inductor has various structures, but the chip inductor used in the high-frequency power amplification device has a structure in which a wire is wound around a ceramic substrate member, and a conductor such as Ag, W is stacked on the ceramic substrate The spiral-shaped structure and the electroplating on the surface of the ceramic core to form a metal layer, and the spiral-shaped cutting of the metal layer by laser light are the mainstream. Therefore, in order to achieve miniaturization, reduce costs, and reduce DC resistance, the applicant has reviewed the proposal of winding a conductive metal wire into a spiral coil and made a new coil (coil inductor) proposal. (Japanese Patent Application No. 2000-367762). For example, this coil has a structure in which a copper wire having a diameter of about 0.1 mm on a surface coated with an insulation film (such as a polyethylene film) is wound into a spiral shape, the outer diameter is about 0.5 6 mm, and the length is about 0.9 mm. Before winding into a spiral shape, the insulating film of the two sacrificial portions of the copper wire is removed by a certain length, or the insulating film is not applied. Therefore, the portion of the coiled wire that is not covered by the insulating film 1 or even a few inches becomes an electrode. The weight of this coil is also very light, only about 0.07 2 5 m g. At the same time, because this coil winds the copper wire into a spiral shape, it has a DC resistance of 100mΩ and a chip inductor with a DC resistance of 100nΩ (for example, a small metal layer cut with laser light to make a spiral structure). .product). In this regard, the DC resistance of the 8η 线圈 inductor of the air-core coil proposed by the applicant is 20ιηΩ, which is only 1/5 of the traditional one, and the cost is also advantageous. The applicant used a conventional bulk feeder to assemble such a coil (air-core coil) into a high-frequency power amplifier of a hybrid integrated circuit device. However, I found that the traditional bulk feeder should be very light. This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -7-(Please read the precautions on the back before filling This page) Order- ^ 91. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 575892 A7 _ _B7_ V. Description of the invention (5) Stable supply of coils is difficult. (Please read the precautions on the back before filling out this page.) The bulk material feeder for semiconductor manufacturing equipment is described in, for example, "Matsusita Technical Journal" 'Vol. 45, No. 4' Aug., 1 999, P86 ~ P90. This document describes a funnel-type bulk material feeder suitable for mounting surface-mounted electronic components such as multilayer chip capacitors and corner chip chip resistors. Fig. 34 and Fig. 42 are diagrams related to the conventional bulk feeder. As shown in FIG. 34, the conventional bulk material feeder is provided with a bulk material storage box 1 10 for containing the bulk material, a funnel 11 provided at the lower part of the bulk material storage box 1, and used to guide the The funnel 11 1 feeds the granular material to the conveying rail 1 2 of the granular material supply unit 12 located at the front end. The granular material storage box 10 has a thin box structure, and the inner bottom is concentrated from both sides to the center. Pellets of inclined body 1 4. The funnel 1 1, which is arranged in a central shape penetrating the inclined body 14, collects the loose particles collected on the inner bottom portion of the inclined body 14 from the loose particle storage box 10 in a line, as shown in FIG. 3 5. It is shown that the guide piece 16 with the conical recess 15 is printed on the upper part of the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the angular tube 17 penetrating through the guide piece 16 has a guide hole 17 for guiding a loose particle along the central axis. The supply shaft is composed of 1 to 8. In order to allow the loose particles to enter the guide hole 17 from the upper end of the supply shaft 18, the above-mentioned guide 16 has a structure capable of vibrating up and down. For example, it vibrates with an amplitude approximately equal to three times the length of a particle (one stroke: 1 st). The guide hole 17 has a rectangular cross section as shown in FIG. 36. The supply shaft 18 has a diameter of 2.6 mm, and a quadrangular guide hole 17 with a width of 0.63 mm and a length of 0.87 mm is provided in the center. Use this loose material feeder to supply 0.56mmx0.185mm size loose paper. The paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ~ _ " ~ 575892 A7 _________B7 V. Description of the invention (6) When the object coil (air core coil) is 9, as shown in Fig. 35 and Fig. 36, some bad accidents will occur. (Please read the precautions on the back before filling this page.) One is that because the cylindrical supply shaft 18 is too thick, the air-core coil 9 will cross the upper end of the supply shaft 18 and will not enter the guide hole 17 A. Poor supply A . The other is that when the guide 16 is lowered, a gap 19 is generated between the inclined surface of the conical recess 15 and the outer peripheral surface of the supply shaft 18, and the supply of the air-core coil 9 sandwiched in this gap 19 is poor. B. Thirdly, because the size of the air-core coil 9 will also vary, therefore, the air-core coil 9 with a size of 0.53mm x 0.87mm is 0.63mmx 0.87mm.

大小之引導孔1 7之途中成爲橫倒狀態而卡住之供應不良C 〇 一方面,傳統之散粒物供料器之運送軌1 3係如第34圖 所示,在其中間存在有接縫D ,因此有時會使空芯線圈9 鉤住該接縫,發生供應不良。 經濟部智慧財產局員工消費合作社印製 另一方面,散粒物供料器12之構造係如第37圖所示’ 而進行如第37圖至第42圖所示之動作。亦即,如第37圖 所示,在運送軌1 3之前端側,運送軌本體25之前端上面側 低一級,而在此較低部分,沿著空芯線圏9之移送方向, 成可來回移動狀安裝有滑動子26。 配設有用以引導空芯線圈9之引導孔17之軌道27延伸 至運送軌本體25之台階部分。運送軌本體25備有可使進入 上述軌道27之引導孔17而移動過來之空芯線圈9之前端停 止下來之停止部28。此停止部28會接觸到空芯線圏9之上 側,但其下部則成部分開放之空間。此空閭形成真空吸引 本紙張尺度適用中國國家標準(CNS〉A4規格(210X297公釐) -9 - 575892 A7 B7 五、發明説明(7 ) 空芯線圈9將其抵接到停止部28用之真空吸引通路30a。 (請先閱讀背面之注意事項再填寫本頁) 滑動子26可藉由彈簧29之彈力使其左端面接觸到附設 台階部分之側面。滑動子26之左端面接觸到附設台階部 分之狀態,形成停止部28對空芯線圈9之定位位置,亦即 ,形成定位基準面。 同時,檔門31重疊在滑動子26上,且對滑動子26成 可移動狀。檔門3 1可沿空芯線圈9之移送方向來回移動, 覆蓋較在軌道27之引導孔17內移動之前頭之空芯線圈9之 長度稍短之距離部分。因此,在軌道27之前頭部分係呈引 導孔17之上面之軌道27部分被削除之構造。檔門31與滑 動子26之間形成真空吸引通路30b。同時,檔門31、滑動 子26及運送軌本體25分別設有孔,而形成真空吸引通路 3 0c、30d、30e。滑動子26靠近左側,檔門3 1被覆引導孔 17之上側之狀態時,此等3個孔重疊,如第37圖之粗線箭 頭所示,真空吸引空芯線圈9,將前頭之空芯線圈9抵接在 停止部28。藉此真空吸引,如第38圖所示,後續之空芯線 圈9便在引導孔17內排成一列。 經濟部智慧財產局員工消費合作社印製 如第3 9圖所示,若令檔門3 1向右側動作,亦即向遠離 引導孔1 7之末端之方向動作,前端之空芯線圈9及第2個 空芯線圈9之前頭部分之一些長度部分將成爲露出狀態。 同時,因爲這時之開啓動作,真空吸引通路30d被檔門31 遮住,因此,真空吸引動作便停止下來。檔門3 1可移動例 如空芯線圈9之長度之3倍(3 st)前後。第40圖係表示此等 之關係之放大截面圖。 本紙張尺度適用中國國家標準(CNS )A4規格(210X297公釐) · 1〇 - " 575892 A7 B7 五、發明説明(8 ) 接著,筒夾3 2移動過來,真空吸著保持前頭之空芯線 圈9,運送到模組基板上,進行空芯線圈9之搭載。 (請先閱讀背面之注意事項再填寫本頁) 如上述,因爲空芯線圈很輕,很容易因真空吸引之切 換時之氣流(氣壓)變動或振動而移動,而變成例如第44圖 所示,前後之空芯線圈9之端部相互重疊。這時,筒夾32 便無法確實真空吸著保持空芯線圈9加以運送,無法將空 芯線圈9搭載於模組基板。而如果爲了提高藉由筒夾之真 空吸著力而加大真空吸著力,由於該真空吸引力之影響有 時會使線圈列混亂,不能將筒夾之真空吸著力加大到超過 必要之大小,其控制十分微妙。再者,第43圖表示良好排 成一列之空芯線圈9之圖。 本發明之目的在提供,高頻特性優異,可提高輸出及 效率,且可降低製造成本之半導體裝置,及裝配該半導體 裝置之電子裝置。 本發明之其他目的在提供,高頻特性優異,可提高輸 出及效率,且可降低製造成本之高頻電力放大裝置,及裝 配該高頻電力放大裝置之無線電通信裝置。 經濟部智慧財產局員工消費合作社印製 本發明之其他目的在提供,安裝直流電阻小之空心線 圈之半導體裝置及裝配該半導體裝置之電子裝置。 本發明之其他目的在提供,安裝直流電阻小之空心線 圈之高頻電力放大裝置,及裝配該高頻電力放大裝置之無 線電通信裝置。 本發明之其他目的在提供,能夠改善振盪邊際之高頻 電力放大裝置,及裝配該高頻電力放大裝置之無線電通信 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 11 _ 575892 A 7 B7 五、發明説明(9 ) 裝置。 本發明之其他目的在提供’能夠將散粒物正確且確實 安裝於配線基板之半導體裝置之製造方法。 (請先閲讀背面之注意事項再填寫本頁) 本發明之其他目的在提供’將散粒物之線圈正確且確 實安裝於配線基板之半導體裝置之製造方法。 本發明之其他目的在提供,能夠達成散粒物之穩定供 應之半導體製造裝置。 本發明之其他目的在提供,能夠達成散粒物之線圈之 穩定供應之半導體製造裝置。 本發明之上述以及其他目的及新穎之特徵,將可以從 本說明書之記述及附圖獲得進一步之瞭解。 茲簡單說明本案所揭示之發明中較具代表性者之槪要 如下。 經濟部智慧財產局員工消費合作社印製 行動電話機裝配有下述架構之高頻電力放大裝置。高 頻電力放大裝置係具有兩個放大系統之雙頻帶架構。放大 系統係具有縱列連接多數半導體放大元件之多級架構,在 輸出最後放大級之半導體放大元件之信號之第1端子,與 電源電壓端子間串聯連接有直流電阻很小之線圈(空芯線圈) 。空芯線圈係搭載於高頻電力放大裝置之模組基板。 供應電源電壓之電源電壓端子設有兩個,具有,一方 之電源電壓端子連接在一方之放大系統之初級放大級與另 一方之放大系統之其餘放大級,另一方之電源電壓端子則 連接在另一方之放大系統之初級放大級與一方之放大系統 之其餘放大級之架構。 -12 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 _ B7 五、發明説明(10 ) (請先閱讀背面之注意事項再填寫本頁) 上述空芯線圈具有,將表面被覆絕緣膜之直徑0.1mm 左右之銅線緊密捲成螺旋狀之構造,兩端之成爲電極之部 分不存在有絕緣膜,最大外徑約〇.56mm,全長約0.9mm, 電感爲8nH者,直流電阻約20ιηΩ,較之傳統之電感8nH者 、直流電阻達ΙΟΟιηΩ之晶片電感器,其直流電組很小。 製造上述高頻電力放大裝置時之空芯線圈之搭載,係 以筒夾真空吸著保持被移送到散粒物供料器之散粒物供應 部而排成一列之空芯線圈之前頭之空芯線圈後,運到模組 基板之一定位置,然後藉由暫時性之加熱處理使預先設在 模組基板或空芯線圈之焊錫溶化而加以固定。再者,搭載 於模組基板之電子零件之高度較空芯線圈爲低。亦即,晶 片零件係長度1 m m,寬度及高度0.5 m m之零件,或較此小 之零件。同時,形成半導體放大元件之半導體晶片之厚度 也很薄。因此直徑0.5 6mm之大空芯線圈係在搭載其他零件 之最後搭載。 經濟部智慧財產局員工消費合作社印製 半導體製造裝置之散粒物供料器係由,散粒物收容箱 、漏斗、運送軌及散粒物供應部構成,用漏斗集中收容於 散粒物收容箱之空芯線圈使其排成一列,而令其在運送軌 內移動,運送到散粒物供應部。散粒物供應部之未圖示之 真空吸引機構會短暫動作,使空芯線圈到達散粒物供應部 °真空吸引機構之真空吸引動停止期間,散粒物供應部之 檔門打開,而以筒夾保持露出之空芯線圈列之前頭之空芯 線圈。 漏斗係由,上端有圓錐台凹部之筒狀之導件,及備有 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-13 - 575892 A7 _B7____ 五、發明説明(11 ) (讀先閱讀背面之注意事項再填寫本頁) 貫穿此導件沿中心軸以一縱列狀態引導散粒物之引導孔之 供應軸,所構成。導件可以上下振動,散粒物則以集中到 圓錐台凹部之方式進入供應軸之引導孔。供應軸之厚度較 薄,以免散粒物跨乘在供應軸之上端而停下來。其位置關 係是,當導件降到下方時,圓錐台凹部之傾斜面與供應軸 之圓錐台凹部之間不會產生能夾住散粒物之空隙。引導孔 較空芯線圈之全長爲短,成爲較空芯線圈之外形稍大之圓 形截面之孔,以免散粒物之空芯線圈成爲橫倒狀態進入供 應軸之引導孔內。因此,供應軸呈圓筒形。 運送軌係由沒有接縫之一根構件所構成’以免沿著引 導孔移動之空芯線圈鉤住該接縫。 經濟部智慧財產局員工消費合作社印製 散粒物供應部備有,可使沿著運送軌之引導孔移動過 來之空芯線圈散粒物定位停止下來之停止部,同時備有: 以沿著散粒物移送方向來回移動自如狀安裝在運送軌之滑 動子;安裝成對上述滑動子成可在散粒物之移送方向來回 移動自如且可開閉引導孔之上面之檔門;設在上述運送軌 、導件及檔門,且可藉真空吸引使上述引導孔內之散粒物 向停止部前進用之構成真空吸引機構之一部分之真空吸引 通路;以及,開閉上述真空吸引通路之開閉構件。 散粒物供應部在引導孔前端部被檔門封閉之狀態下使 開閉構件開啓動作,令引導孔內之散粒物向停止部前進。 接著,檔門開啓動作較空芯線圈之長度稍短之距離,使開 閉構件關閉。接著,檔門與滑動子再動作打開,使前頭之 散粒物與後續之散粒物之間產生一定之距灕。然後,檔門 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公复) -14 - " 575892 A7 _____B7^___ 五、發明説明(12 ) 進一步打開,使前頭之散粒物露出。在此狀態下進行以筒 夾真空吸著保持前頭之散粒物。 (請先閱讀背面之注意事項再填寫本頁) 依據上述手段時, (a) 空芯線圈之直流電阻較晶片電感器小。因此當作連 接在多級架構之放大系統之最後放大級之電感益使用時’ DC損耗很少,可以使損失減小、阻抗提高。因此,可以達 成減低從最後放大級向其前級之高頻信號之回授’可以提 高振盪邊際。其結果,因爲使用RF模組而可改善振盪邊際 ,因此可以改善行動電話之通話性能。 (b) 因爲是雙頻架構而供給兩個放大系之電源電壓係成 交叉架構,因此,可以抑制從後級放大級(特別是最後放大 級)漏到初級放大級之漏洩信號通過電源線回授,因此可以 改善振盪邊際。這一點在如(a)使用空芯線圈時,更可改善 振盪邊際。 經濟部智慧財產局員工消費合作社印製 (c) 空芯線圈係將表面被覆絕緣膜之銅線緊密捲成螺旋 狀之架構,因此製造成本僅及傳統之晶片電感器之1 /7〜1 /2 程度,十分廉價。與連接在最後放大級之成本很高之晶片 電感器比較,可以將成本降低到1/7前後。若將其他部分使 用之晶片電感器改用本發明之空芯線圈,則其成本可以降 到1/2前後。藉此可以降低高頻電力放大裝置之成本。因此 ,裝配此高頻電力放大裝置之行動電話機(無線電通信裝置) 之製造成本也可以降低。 (d) 空芯線圈之最大外徑在〇.56mm前後,長度在〇.9mm 前後,其安裝長度較傳統之寬度及局度〇.5mm ,長度1mm 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ' 575892 A7 B7 五、發明説明(13 ) 之晶片電感器之安裝長度短。 (e)製造高頻電力放大裝置時之空芯線圈之搭載(半導體 裝置之製造方法),有以下所述之效果。 (請先閱讀背面之注意事項再填寫本頁) ① 搭載於模組基板之電子零件中,空芯線圈最高,但 是在搭載其他電子零件後方安裝。因此,真空吸著保持空 芯線圈之筒夾不接觸到已經搭載於基板之電子零件,不會 損及其他電子零件。其結果,可以提高安裝完成率。 ② 使用筒夾真空吸著保持移送到散粒物供料器之散粒 物供應部而排成一列之空芯線圈之前頭之空芯線圈後,運 送到模組基板之一定位置,然後藉暫時性之加熱處理溶融 預先設在模組基板或空芯線圈之焊錫而加以固定,因爲在 散粒物供應部係將後續之空芯線圈與前頭之空芯線圈分開 供應,因此不會發生後續之空芯線圈重疊在前頭之空芯線 圏,或鉤住而發生之筒夾之真空吸著保持失誤,可以正確 且確實完成安裝,同時安裝作業也很簡單。因此,很少發 生安裝不良或機械停止之事故,可以降低安裝成本。 ③ 漏斗部分因筒狀之供應軸之厚度變薄,因此散粒物 不會跨乘在上端,對散粒物供應部可以確實供應空芯線圈 經濟部智慧財產局員工消費合作社印製 ,進行穩定之安裝。 ④ 在漏斗部分係成爲,在導件降到最下方之狀態時, 供應軸之外周面與導件之圓錐台凹部之間不會產生能夾住 散粒物之空隙之位置關係,因此空芯線圈不會被夾在供應 軸之外周面與導件之圓錐台凹部之間。因此可以防止空芯 線圈之變形,也不會安裝已變形之空芯線圈,可以提高安 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -16: 575892 A7 _B7_ 五、發明説明(14 ) 裝完成率。同時,可以向散粒物供應部穩定供應空芯線圈 〇 (請先閱讀背面之注意事項再填寫本頁) ⑤ 供應軸之引導孔較大且係呈圓形截面之孔’因此空 芯線圈不阻塞在引導孔內’可以向散粒物供應部穩定供應 空芯線圈。 ⑥ 運送軌係由沒有接縫之一根構件所構成,因此空芯 線圈不會在引導孔之途中鉤住,可以向散粒物供應部穩定 供應空芯線圏。 茲參照附圖詳細說明本發明之實施形態如下。再者, 在說明發明之實施形態之所有圖式,具有相同功能者標示 同一記號,並省略返覆之說明。 (實施形態1) 第1圖乃至第3 1圖係本發明之一實施形態(實施形態1) 之半導體裝置(高頻電力放大裝置)及其製造技術,以及無線 電通信裝置(電子裝置)之圖。 經濟部智慧財產局員工消費合作社印製 在實施形態1 ,將說明在半導體裝置之高頻電力放大 裝置(混合積體電路裝置)應用本發明之例子。本實施形態1 之高頻電力放大裝置係雙頻帶用,例如用在裝配有GSM通 信系統及DCS通信系統之行動電話機(無線電通信裝置)之 雙頻帶用之高頻電力放大裝置。The guide holes 17 of large and small sizes are in a state of falling in the middle of the way and the supply is jammed. C. On the one hand, the conveying rails 1 and 3 of the conventional loose material feeder are shown in FIG. 34, and there is a connection in the middle. The seam D may cause the air-core coil 9 to catch the seam, resulting in poor supply. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs On the other hand, the structure of the bulk material feeder 12 is as shown in Fig. 37 'and the operations shown in Figs. 37 to 42 are performed. That is, as shown in FIG. 37, the front side of the front end of the transport rail 13 and the upper side of the front end of the transport rail body 25 are one level lower, and in this lower part, it can be moved back and forth along the moving direction of the hollow core line 9 A slider 26 is mounted in a movable shape. A rail 27 provided with a guide hole 17 for guiding the air-core coil 9 extends to a stepped portion of the transport rail body 25. The transport rail body 25 is provided with a stopper portion 28 for stopping the front end of the air-core coil 9 which has moved into the guide hole 17 of the above-mentioned rail 27. This stopper portion 28 comes into contact with the upper side of the hollow core wire 9, but the lower portion thereof becomes a partially open space. The vacuum formed by this air gap attracts the Chinese paper standard (CNS> A4 specification (210X297 mm) -9-575892 A7 B7. V. Description of the invention (7) The air-core coil 9 abuts it to the stop portion 28 for use Vacuum suction passage 30a. (Please read the precautions on the back before filling this page.) Slider 26 can make the left end of the slider contact the side of the step with the spring force of the spring 29. The left end of the slider 26 touches the step Partial state forms the positioning position of the stop portion 28 with respect to the air-core coil 9, that is, the positioning reference plane. At the same time, the shutter 31 is superposed on the slider 26 and is movable with respect to the slider 26. Gate 3 1 can move back and forth in the direction of the air-core coil 9 to cover a slightly shorter distance than the length of the air-core coil 9 before moving in the guide hole 17 of the track 27. Therefore, the head portion is guided before the track 27 A part of the rail 27 above the hole 17 is cut away. A vacuum suction passage 30b is formed between the shutter 31 and the slider 26. At the same time, the shutter 31, the slider 26, and the transport rail body 25 are provided with holes to form a vacuum. attract Road 3 0c, 30d, 30e. When the slider 26 is close to the left and the gate 3 1 covers the upper side of the guide hole 17, these three holes overlap, as shown by the thick line arrows in Figure 37. The vacuum attracts the empty core The coil 9 abuts the front air-core coil 9 on the stopper portion 28. With this vacuum suction, as shown in FIG. 38, the subsequent air-core coils 9 are aligned in the guide hole 17. The Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative as shown in Figure 3-9, if the gate 3 1 is moved to the right, that is, away from the end of the guide hole 17, the air-core coil 9 at the front end and the second air-core coil Some lengths of the head part before 9 will be exposed. At the same time, because of the opening action at this time, the vacuum suction path 30d is blocked by the gate 31, so the vacuum suction operation stops. The gate 3 1 can be moved, for example, an empty core Around 3 times (3 st) of the length of the coil 9. Figure 40 is an enlarged cross-sectional view showing these relationships. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) · 10- " 575892 A7 B7 V. Description of the invention (8) Next, the collet 3 2 Move over, vacuum suck and hold the air-core coil 9 on the front, transport it to the module substrate, and carry the air-core coil 9. (Please read the precautions on the back before filling this page) As above, because the air-core The coil is very light, and it is easy to move due to the change of air flow (air pressure) or vibration when the vacuum suction is switched. For example, as shown in FIG. 44, the ends of the front and back air-core coils 9 overlap each other. At this time, the collet 32 is convenient. The air-core coil 9 cannot be vacuum-sucked and transported, and the air-core coil 9 cannot be mounted on the module substrate. If the vacuum suction force is increased in order to increase the vacuum suction force by the collet, the vacuum attractive force The influence sometimes makes the coil array disorder, and the vacuum suction force of the collet cannot be increased more than necessary, and its control is very delicate. Fig. 43 is a diagram showing the air-core coils 9 arranged in a line. An object of the present invention is to provide a semiconductor device which is excellent in high-frequency characteristics, can improve output and efficiency, and can reduce manufacturing costs, and an electronic device equipped with the semiconductor device. Another object of the present invention is to provide a high-frequency power amplifier device having excellent high-frequency characteristics, which can improve output and efficiency, and can reduce manufacturing costs, and a radio communication device equipped with the high-frequency power amplifier device. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Another object of the present invention is to provide a semiconductor device in which a hollow coil having a small DC resistance is installed and an electronic device in which the semiconductor device is mounted. Other objects of the present invention are to provide a high-frequency power amplifying device equipped with a hollow coil having a small DC resistance, and a radio communication device equipped with the high-frequency power amplifying device. Another object of the present invention is to provide a high-frequency power amplification device capable of improving the oscillation margin, and radio communication equipped with the high-frequency power amplification device. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 11 _ 575892 A 7 B7 V. Description of the Invention (9) Device. Another object of the present invention is to provide a method of manufacturing a semiconductor device that can accurately and reliably mount loose particles on a wiring substrate. (Please read the precautions on the back before filling this page.) Another object of the present invention is to provide a method for manufacturing a semiconductor device in which a coil of loose particles is accurately and surely mounted on a wiring substrate. Another object of the present invention is to provide a semiconductor manufacturing apparatus capable of achieving stable supply of loose particles. Another object of the present invention is to provide a semiconductor manufacturing apparatus capable of achieving stable supply of coils of loose particles. The above and other objects and novel features of the present invention will be further understood from the description of the present specification and the accompanying drawings. A brief description of the most representative of the inventions disclosed in this case is as follows. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The mobile phone is equipped with a high-frequency power amplification device of the following architecture. The high-frequency power amplification device has a dual-band architecture with two amplification systems. The amplifying system has a multi-stage structure in which a plurality of semiconductor amplifying elements are connected in a column. A first terminal that outputs a signal of the semiconductor amplifying element of the last amplifying stage is connected in series with a power supply voltage terminal with a small DC resistance coil (air-core coil). ). The air-core coil is a module substrate mounted on a high-frequency power amplifier device. There are two power supply voltage terminals for power supply voltage. One power supply voltage terminal is connected to the primary amplification stage of one amplification system and the other amplification stage of the other amplification system, and the other power voltage terminal is connected to the other. The structure of the primary amplification stage of one amplification system and the remaining amplification stages of one amplification system. -12-This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) 575892 A7 _ B7 V. Description of the invention (10) (Please read the precautions on the back before filling this page) The above air-core coil has, The copper wire with a diameter of about 0.1mm on the surface is closely wound into a spiral structure. The insulating film does not exist at the two ends of the electrode. The maximum outer diameter is about 0.56mm, the total length is about 0.9mm, and the inductance is 8nH. The DC resistance is about 20mΩ, which is smaller than the conventional chip inductor with 8nH and DC resistance of 100mΩ. The installation of the air-core coils during the manufacture of the above-mentioned high-frequency power amplifying device is performed by vacuum holding the collet with a collet and holding the air-core coils that are transferred to the loose-particle supply unit of the loose-particle feeder in a row. After the core coil, it is transported to a certain position on the module substrate, and then the solder previously set on the module substrate or the air-core coil is dissolved and fixed by temporary heat treatment. Furthermore, the height of the electronic components mounted on the module substrate is lower than that of the air-core coil. That is, the wafer part is a part having a length of 1 m, a width and a height of 0.5 m m, or a part smaller than this. At the same time, the thickness of the semiconductor wafer forming the semiconductor amplifying element is also thin. Therefore, a large air core coil with a diameter of 0.5 to 6 mm is mounted last when other components are mounted. The bulk material feeder of the printed semiconductor manufacturing device of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is composed of a bulk material storage box, a funnel, a transport rail, and a bulk material supply unit. The funnel is collectively stored in the bulk material storage. The air core coils of the box are arranged in a row, and then they are moved in the transport rail and transported to the loose particle supply department. The vacuum suction mechanism (not shown) of the particle supply unit will act briefly to make the air-core coil reach the particle supply unit. While the vacuum suction of the vacuum suction mechanism is stopped, the door of the particle supply unit is opened and the The collet holds the air-core coil in front of the exposed air-core coil row. The funnel is composed of a cylindrical guide with a conical recess at the upper end, and a paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -13-575892 A7 _B7____ V. Description of the invention (11) ( (Please read the precautions on the back before filling in this page.) It is constituted by the supply shaft of the guide hole that guides the loose particles in a column along the central axis. The guide can vibrate up and down, and the loose particles enter the guide hole of the supply shaft by focusing on the conical recess. The thickness of the supply shaft is thin to prevent loose particles from crossing the upper end of the supply shaft and stopping. The position is such that when the guide is lowered below, there will be no gap between the inclined surface of the conical recessed portion and the conical recessed portion of the supply shaft that can trap loose particles. The guide hole is shorter than the entire length of the air-core coil, and becomes a hole with a slightly larger round cross-section than the air-core coil, so as to prevent the air-core coil of loose particles from falling into the guide hole of the supply shaft. Therefore, the supply shaft has a cylindrical shape. The transport rail is composed of a member without a seam 'to prevent the air-core coil moving along the guide hole from catching the seam. The Department of Economics, Intellectual Property Bureau, Employees' Cooperatives, Printed Particle Supply Department has a stopping section that can position and stop the air-core coil particles moving along the guide holes of the transport rail. It also has: The granular material moving direction can be moved back and forth freely, and the slider is installed on the conveying rail; it is installed so that the slider can move back and forth freely in the granular material moving direction and can open and close the guide hole above the guide hole; The rail, the guide, and the shutter can be vacuum suction passages forming part of the vacuum suction mechanism for vacuuming the particles in the guide hole to the stopping portion by vacuum suction; and opening and closing members of the vacuum suction passage. The granular material supply unit moves the opening and closing member in a state where the front end portion of the guide hole is closed by the shutter, and advances the granular material in the guide hole to the stopping portion. Then, the door opening operation is slightly shorter than the length of the air-core coil to close the opening and closing member. Then, the door and the slider are opened again, so that there is a certain distance between the first loose particles and the subsequent loose particles. Then, the paper size of the door is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 public reply) -14-" 575892 A7 _____ B7 ^ ___ 5. The invention description (12) is further opened to expose the loose particles in front. In this state, vacuum suction is used to hold loose particles in front of the collet. (Please read the precautions on the back before filling this page.) According to the above methods, (a) the DC resistance of air-core coils is smaller than chip inductors. Therefore, when used as the inductor of the last amplifier stage connected to a multi-stage amplifier system, the DC loss is small, which can reduce the loss and increase the impedance. Therefore, it is possible to reduce the feedback of the high-frequency signal from the last amplification stage to its predecessor, and to increase the margin of oscillation. As a result, the use of the RF module can improve the oscillation margin, which can improve the call performance of mobile phones. (b) Because it is a dual-frequency architecture, the power supply voltages supplied to the two amplifier systems are in a crossover structure, so that leakage signals from the subsequent amplifier stage (especially the last amplifier stage) to the primary amplifier stage can be suppressed through the power line. It can improve the oscillation margin. This point can improve the oscillation margin even more when (a) an air-core coil is used. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (c) Air-core coil is a structure in which the copper wire covered with the insulation film is closely wound into a spiral structure, so the manufacturing cost is only 1/7 ~ 1 / 2 degrees, very cheap. Compared with the high-cost chip inductor connected in the final amplification stage, the cost can be reduced to about 1/7. If the chip inductor used in other parts is replaced with the air-core coil of the present invention, the cost can be reduced to about 1/2. This can reduce the cost of the high-frequency power amplification device. Therefore, the manufacturing cost of a mobile phone (radio communication device) equipped with the high-frequency power amplification device can also be reduced. (d) The maximum outer diameter of the air-core coil is around 0.56mm, the length is around 0.9mm, and its installation length is longer than the traditional width and locality of 0.5mm, and the length is 1mm. The paper size applies to the Chinese National Standard (CNS) A4 Specifications (210X297 mm) 575892 A7 B7 V. Description of the invention (13) The chip inductor has a short installation length. (e) The mounting of air-core coils when manufacturing high-frequency power amplifier devices (methods of manufacturing semiconductor devices) has the following effects. (Please read the precautions on the back before filling this page) ① Among the electronic components mounted on the module substrate, the air-core coil is the highest, but it is installed behind other electronic components. Therefore, the collet of the air-core coil held by vacuum suction does not contact the electronic components already mounted on the substrate, and does not damage other electronic components. As a result, the installation completion rate can be improved. ② Use a collet to vacuum suck and hold the air-core coils that are moved to the air-core coils of the air-particles feeder and lined up before the air-core coils, and then transport them to a certain position on the module substrate. The heat treatment melts the solder which is set on the module substrate or the air-core coil in advance, and fixes it, because the subsequent air-core coil is separately supplied from the front air-core coil in the loose particle supply department, so the subsequent The air core coil overlaps the air core wire coil on the front, or the vacuum suction of the collet caused by the hook is incorrect. The installation can be completed correctly and surely, and the installation operation is also very simple. Therefore, accidents such as poor installation or mechanical stoppages rarely occur, which can reduce installation costs. ③ The funnel part is thinner due to the thickness of the cylindrical supply shaft, so the loose particles will not cross over the upper end. The loose particles supply department can supply the air-core coils. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs for stability. Of its installation. ④ In the funnel part, when the guide is lowered to the lowest position, there is no positional relationship between the outer peripheral surface of the supply shaft and the conical recess of the guide, which can trap the loose particles. The coil is not sandwiched between the outer peripheral surface of the supply shaft and the conical recess of the guide. Therefore, the deformation of the air-core coil can be prevented, and the deformed air-core coil can not be installed. The size of the safe paper can be increased. The Chinese national standard (CNS) A4 specification (210X297 mm) can be applied. -16: 575892 A7 _B7_ V. Description of the invention (14) Installation completion rate. At the same time, it is possible to stably supply air-core coils to the particle supply department. (Please read the precautions on the back before filling out this page.) ⑤ The guide shaft of the supply shaft is large and has a circular cross-section. Blocked in the guide hole 'can stably supply the air core coil to the loose particle supply section. ⑥ The transport rail is made up of a single member without a seam. Therefore, the air-core coil is not caught in the middle of the guide hole, and the air-core wire can be stably supplied to the loose particle supply unit. Embodiments of the present invention are described in detail below with reference to the drawings. In addition, in all the drawings describing the embodiment of the invention, those having the same function are marked with the same symbol, and the description of the reply is omitted. (Embodiment 1) Figures 1 to 31 are diagrams of a semiconductor device (high-frequency power amplifier device) and its manufacturing technology, and a radio communication device (electronic device) according to one embodiment (Embodiment 1) of the present invention. . Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs In Embodiment 1, an example in which the present invention is applied to a high-frequency power amplifier device (hybrid integrated circuit device) of a semiconductor device will be described. The high-frequency power amplifier device according to the first embodiment is a dual-band power amplifier device. For example, the high-frequency power amplifier device is a dual-band power amplifier device for a mobile phone (radio communication device) equipped with a GSM communication system and a DCS communication system.

本實施形態1之高頻電力放大裝置(RFThe high-frequency power amplifying device (RF

Power Amplifier Μodule)l ,係如第2圖所示’其外觀是呈扁平之矩形體構 造。高頻電力放大裝置1係呈,由陶瓷配線板之模組基板5 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公楚)- 575892 A7 B7 五、發明説明(15 ) (請先閲讀背面之注意事項再填寫本頁) ,及重疊安裝在此模組基板5之一面側(主面側)之蓋體6構 成扁平矩形體構造之組件7之構造。蓋體6係具有電磁遮蔽 效果之金屬製,係壓製形成之成形品。 第4圖係表示本實施形態1之高頻電力放大裝置之電路 架構之方塊圖。此高頻電力放大裝置1具有’外部電極端 子之GSM用輸入端子(PinGSM①)、控制端子(Vapc②)、電 源電壓Vdd之一方之電原電壓端子(Vddl③)、GSM用輸出 端子(PoutGSM④)、DCS用輸出端子(PoutDCS⑤)、電源電 壓Vdd之另一方之電源電壓端子(Vdd2⑥)、通信頻帶切換 用端子(Vctl⑦)、DCS用輸入端子(PinDCS⑧)、及未圖示 之接地電壓端子(GND)。端子排列係如第1圖所示之從模組 基板5之前方由左向右成①、②、③、④之排列,從後方 由右向左成⑤〜⑧之排列。 DCS及GSM之通信系統均係3級放大架構。DCS放大 系統係由以1st、2nd、3rd所示之放大級(ampl、amp2、 amp3)構成,GSM放大系統係由以1st、2nd、3rd所示之放 大級(amp4、amp5、amp6)構成。各放大級由未圖示之以矽 基板爲基礎形成之電場效果電晶體(FET)所形成。 經濟部智慧財產局員工消費合作社印製 在這種架構,PinDCS⑧係連接在ampl,PoutDCS⑤係 連接在amp3。而PinGSM①係連接在amp4,PoutGSM④係 連接在a m p 6。Power Amplifier Mudule) 1, as shown in Figure 2 ', its appearance is a flat rectangular structure. The high-frequency power amplifier device 1 is a module substrate made of ceramic wiring board. 5 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297). 575892 A7 B7 V. Description of the invention (15) (Please read first Note on the back side, fill in this page again), and the cover body 6 mounted on one side (main side) of the module substrate 5 is superposed to form the structure of the flat rectangular structure of the component 7. The cover 6 is a metal product having an electromagnetic shielding effect, and is a molded product formed by pressing. Fig. 4 is a block diagram showing a circuit structure of the high-frequency power amplifier device according to the first embodiment. This high-frequency power amplifier device 1 includes an external electrode terminal for a GSM input terminal (PinGSM①), a control terminal (Vapc②), a power source voltage terminal (Vddl③), a GSM output terminal (PoutGSM④), and a DCS. The output terminal (PoutDCS⑤), the other side of the power supply voltage Vdd (Vdd2⑥), the communication frequency band switching terminal (Vctl⑦), the DCS input terminal (PinDCS⑧), and the ground voltage terminal (GND) (not shown). The terminal arrangement is as shown in Fig. 1 from the front of the module substrate 5 from left to right in the order of ①, ②, ③, and ④, and from the rear from right to left in the order of ⑤ to ⑧. The communication systems of DCS and GSM are all three-level amplification architecture. The DCS amplifier system consists of amplifier stages (ampl, amp2, amp3) shown as 1st, 2nd, and 3rd, and the GSM amplifier system consists of amplifier stages (amp4, amp5, and amp6) shown as 1st, 2nd, and 3rd. Each amplification stage is formed by an electric field effect transistor (FET) formed on a silicon substrate (not shown). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In this structure, PinDCS⑧ is connected to ampl, and PoutDCS⑤ is connected to amp3. PinGSM① is connected to amp4, and PoutGSM④ is connected to amp p6.

Vapc②連接在偏壓電路2,同時藉由輸入此Vapc②之 信號控制a m p 1〜a m ρ 6。Vapc② is connected to the bias circuit 2 and at the same time, a m p 1 ~ a m ρ 6 is controlled by the signal input to this Vapc②.

Vddl③係經由微帶狀線MSI連接在ampl ,經由微帶 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -18- 575892 A7 B7 五、發明説明(16) (請先閱讀背面之注意事項再填寫本頁) 狀線MS4連接在amp5,經由電感器L2連接在amp6。同時 ,爲了高頻特性之穩定化,以外接方式在Vdd 1③連接有一 端連接在GND之電容器C1。Vddl③ is connected to ampl via MSI via microstrip line. The paper size of the microstrip is applicable to China National Standard (CNS) A4 (210X 297 mm) -18- 575892 A7 B7 V. Description of the invention (16) (Please read first Note on the back, please fill in this page again) The line MS4 is connected to amp5, and is connected to amp6 via inductor L2. At the same time, in order to stabilize the high frequency characteristics, a capacitor C1 with one end connected to GND is connected to Vdd 1③ externally.

Vdd2⑥係經由微帶狀線MS3連接在amp3 ,經由微帶 狀線MS2連接在amp2,經由電感器L1連接在amp3。同時 ,爲了高頻特性之穩定化,以外接方式在Vdd2⑥連接有一 端連接在GND之電容器C2。 如此,電源電壓準備有兩個端子(Vddl③、Vdd2⑥), 一方之電源電壓端子向一方之放大系統之初級放大級及另 一方之放大系統之2級及3級放大級供應電源電壓’另一方 之電源電壓端子向另一方之放大系統之初級放大級及一方 之放大系統之2級及3級放大級供應電源電壓。因爲成爲交 叉架構,因此,可以抑制從後級放大級(特別是最後放大級) 漏到初級放大級之漏洩信號通過電源線回授,因此可以改 善振盪邊際。 同時,上述L1〜L3之電感爲8nH者,其直流電阻爲 20ιηΩ,較之傳統之電感8nH而直流電阻爲ΙΟΟιηΩ之晶片電 感器,可以形成直流電阻大幅度減小之空芯線圈。 經濟部智慧財產局員工消費合作社印製Vdd2⑥ is connected to amp3 via a microstrip line MS3, to amp2 via a microstrip line MS2, and to amp3 via an inductor L1. At the same time, in order to stabilize the high-frequency characteristics, a capacitor C2 with one end connected to GND is connected to Vdd2⑥ externally. In this way, the power supply voltage is prepared with two terminals (Vddl③, Vdd2⑥), and one power supply voltage terminal supplies the power supply voltage to the primary amplification stage of one amplification system and the second and third amplification stages of the other amplification system. The power supply voltage terminal supplies the power supply voltage to the primary amplification stage of the other amplification system and the 2nd and 3rd stage amplification systems of the one amplification system. Because it is a cross-connected structure, it is possible to suppress the leakage signal leaked from the back-end amplifier stage (especially the last amplifier stage) to the primary amplifier stage through the power line, so the oscillation margin can be improved. At the same time, if the inductance of L1 ~ L3 above is 8nH, its DC resistance is 20mΩ, compared with the traditional chip inductor with 8nH and DC resistance of 100mΩ, it can form air core coil with greatly reduced DC resistance. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

VcU⑦連接在頻帶選擇電路3。此頻帶選擇電路3係 由源極接地之3個η通道型電場效果電晶體(FET)Q8、Q9、 Q10,及1個電阻器R1所構成。Q8及Q9之閘極端子連接 在Vctl⑦。Q10之閘極端子連接在Q9之汲極端子,汲極端 子則經由電阻器R2連接在amp5之輸出側。Q9之汲極端子 係經由電阻器R1連接在Vdd2⑥。Q8之汲極端子係經由電 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -19 - 575892 A7 B7 五、發明説明(17 ) 感器L3連接在amp3之輸入側。由供給Vctl⑦之信號切換 頻帶,進行DCS通信用之放大,或GSM通信用之放大。 (請先閱讀背面之注意事項再填寫本頁) 第1圖係表示,搭載於例如堆積玻璃陶瓷而低溫燒成 之陶瓷配線板構成之模組基板5表面之各電子零件之平面 圖。 如第1圖所示,模組基板5之表面搭載有4個半導體晶 片8a〜8d、3個空芯線圈9a〜9c、及未標示記號之多數晶片 電阻及晶片電容器。 模組基板5之表裏面以及內部均選擇性形成有導體。 而由此等導體形成配線4。此等配線4之一部分成爲固定上 述半導體晶片8a〜8d用之搭載用焊接區4a ,成爲固定晶片 電阻或晶片電容器等晶片型電子零件或空芯線圈9a〜9c之電 極之電極固定用焊接區4b ,或者,構成連接其一端連接在 半導體晶片8a〜8d之未圖示之電極之引線20之另一端之引 線焊接區4 c %。模組基板5之背面由上述配線4形成表面 安裝型之電極,形成上述①〜⑧之外部電極端子。此等外部 電極端子係呈LGA(Land Grid Array)構造。 經濟部智慧財產局員工消費合作社印製 半導體晶片8a〜8d係固定在設在模組基板5之主面之凹 部底。而動作時之發熱量大之半導體晶片在其下面之模組 基板5設有通孔,同時在此通孔內塡充上述導體,用以傳 導模組基板5背面之熱量。 在半導體晶片8a〜8d,半導體晶片8a裝配有DCS用之 1st及2nd之半導體放大元件。而半導體晶片8b則裝配有 DCS用之3rd之半導體放大元件。半導體晶片8c則裝配有 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 20 - 575892 A7 _ _B7 五、發明説明(18 ) GSM用之1st及2nd之半導體放大元件。半導體晶片gd則裝 配有GSM用之3rd之半導體放大元件。 另一方面,如第4圖之方塊圖所示,高頻電力放大裝 置1之電感器L1〜L 3係如第1圖所示以線圈(空芯線圈 9a〜9c)形成,此係本發明之特徵之一。 第3圖(b)示有,搭載在模組基板5之空芯線圈9a(9)。 空芯線圈9係由表面被覆絕緣膜之電感器部2 2 ,及兩端之 未被覆絕緣膜之電極23構成。此空芯線圈9之電感器部22 有6匝,電極23爲2匝。空芯線圈9係其電極23由焊錫24 固定在模組基板5之配線4b,藉此安裝。再者,第3圖(a) 之空芯線圈9係電感器部22有8匝,電極23有1匝之實施 例。 若舉一例,空芯線圈9之構造是,將表面被覆絕緣膜( 例如聚乙烯膜)之直徑0.1mm左右之銅線捲成螺旋狀,外徑 爲0.56mm左右,長度在0.9mm左右。在捲成螺旋狀之前, 先將銅線之兩端部分之絕緣膜去除一定長度,該去除絕緣 之捲線部分成爲外部電極23。被覆絕緣膜部分之捲線部分 成爲電極22。此空芯線圈9之重量也很輕,只有〇.〇725mg 。同時,此線圈因爲是將銅線捲成螺旋狀製成,因此較之 傳統之晶片電感器(例如,電流容量2.1A左右’電感8nH ’ 直流電阻ΙΟΟιηΩ之晶片電感器),成本只有1/7前後。而電 流容量小之晶片電感器,其成本只有1/2。 如此,高頻電力放大裝置1可以如下述’振盪邊際獲 得改善,同時可以減低傳輸損失。 $紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) TJl - ' I n I n I - I I I ^^^1 I (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(19 ) (1) 振盪邊際對策 在第33圖所示之電路,因爲GSM/DCS各電路鍊之電源 線是共同使用,因 此會形成從3rdFET洩漏之信號通過電源線回到IstFET 之回授環(feed back loop)’很容易引起振盪。 對此,本實施形態1之第4圖所不之電路則爲了改善此 feed back loop之影響,而配設兩個電源電壓端子(Vddl 、 Vdd2),藉由別的電源電壓端子供應放大增益最高之IstFET 之電源線,以抑制對IstFET之回授,改善振盪邊際。 同時,在GSM及DCS之放大系統,因爲是以DC電阻 較小之空芯線圈9形成至3rdFET之電源線部分之電感器, 因此DC損失變小,可降低電力損耗,提高阻抗。其結果, 可減低從3rdFET至2ndFET之RF信號之回授,加上上述交 叉架構之效果,可以進一步提高振盪邊際。 (2) 在電源線使用空芯線圈以降低傳輸損失 隨著電路之高積體化之小型·多功能化,有必要提高 零件之安裝密度,帶狀線等有必要布置在基板之內部。惟 ,要將電源線布置在基板內部有下列問題。 ① 因特性阻抗之降低,高頻波傳輸損失(R F損失)會 增力口。 ② 加長帶狀線作爲RF損失之對策時,DC損失會增加 本紙張尺度適用中國國家標準(CNS ) Μ規格(2ΚΓχ 297公釐) -22- (請先閲讀背面之注意事項再填寫本頁)VcU⑦ is connected to the band selection circuit 3. This band selection circuit 3 is composed of three n-channel type electric field effect transistors (FETs) Q8, Q9, and Q10 whose source is grounded, and a resistor R1. The gate terminals of Q8 and Q9 are connected to Vctl⑦. The gate terminal of Q10 is connected to the drain terminal of Q9, and the drain terminal is connected to the output side of amp5 via resistor R2. The drain terminal of Q9 is connected to Vdd2 through resistor R1. The drain terminal of Q8 is electrically connected to the Chinese National Standard (CNS) A4 specification (210X297 mm) through the paper size. -19-575892 A7 B7 V. Description of the invention (17) The sensor L3 is connected to the input side of amp3. The frequency band is switched by the signal supplied to Vctl⑦ for amplification for DCS communication or amplification for GSM communication. (Please read the precautions on the back before filling this page.) Figure 1 is a plan view of each electronic component mounted on the surface of a module substrate 5 made of, for example, a ceramic wiring board stacked with glass ceramics and fired at a low temperature. As shown in Fig. 1, on the surface of the module substrate 5, four semiconductor wafers 8a to 8d, three air-core coils 9a to 9c, and a large number of chip resistors and chip capacitors not marked are mounted. Conductors are selectively formed on the inside and outside of the module substrate 5. These conductors form the wiring 4. A part of these wirings 4 is a mounting pad 4a for mounting the semiconductor wafers 8a to 8d, and is a pad 4b for fixing electrodes for fixing chip-type electronic parts such as chip resistors or chip capacitors or electrodes for air-core coils 9a to 9c. Or, it constitutes a lead pad 4 c% connected to the other end of the lead 20 whose one end is connected to an electrode (not shown) of the semiconductor wafer 8 a to 8 d. The rear surface of the module substrate 5 is a surface-mounted electrode formed by the wiring 4 described above, and the external electrode terminals ① to ⑧ are formed. These external electrode terminals have a LGA (Land Grid Array) structure. The semiconductor wafers 8a to 8d printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs are fixed to the bottom of the recessed portion provided on the main surface of the module substrate 5. The semiconductor wafer with a large amount of heat during operation is provided with a through hole in the module substrate 5 below it, and the above-mentioned conductor is filled in the through hole to conduct the heat on the back of the module substrate 5. The semiconductor wafers 8a to 8d are equipped with semiconductor amplifier elements of 1st and 2nd for DCS. The semiconductor wafer 8b is equipped with a 3rd semiconductor amplifying element for DCS. The semiconductor wafer 8c is equipped with the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 20-575892 A7 _ _B7 V. Description of the invention (18) 1st and 2nd semiconductor amplification components for GSM. The semiconductor chip gd is equipped with a 3rd semiconductor amplifying element for GSM. On the other hand, as shown in the block diagram of FIG. 4, the inductors L1 to L3 of the high-frequency power amplifying device 1 are formed by coils (air-core coils 9a to 9c) as shown in FIG. 1, which is the present invention. One of the characteristics. FIG. 3 (b) shows an air-core coil 9 a (9) mounted on the module substrate 5. The air-core coil 9 is composed of an inductor portion 2 2 whose surface is covered with an insulating film, and electrodes 23 which are not covered with an insulating film at both ends. The inductor portion 22 of this air-core coil 9 has 6 turns, and the electrode 23 has 2 turns. The air-core coil 9 has its electrodes 23 fixed to the wiring 4b of the module substrate 5 by solder 24, thereby being mounted. Furthermore, the air-core coil 9 in FIG. 3 (a) is an embodiment in which the inductor portion 22 has 8 turns and the electrode 23 has 1 turn. As an example, the structure of the air-core coil 9 is to roll a copper wire having a diameter of about 0.1 mm on the surface of an insulating film (such as a polyethylene film) into a spiral shape, having an outer diameter of about 0.56 mm and a length of about 0.9 mm. Before the coil is wound into a spiral shape, the insulation film at both ends of the copper wire is removed by a certain length, and the insulation-removed wire portion becomes the external electrode 23. The wound portion of the covered insulating film portion becomes the electrode 22. The weight of this air-core coil 9 is also very light, only 0.0725 mg. At the same time, because this coil is made of copper wire in a spiral shape, it costs only 1/7 compared to traditional chip inductors (for example, a chip inductor with a current capacity of about 2.1A 'inductive 8nH' DC resistance 10 〇ιηΩ). Before and after. A chip inductor with a small current capacity has a cost of only 1/2. In this way, the high-frequency power amplifying device 1 can improve the oscillation margin as described below, and at the same time, it can reduce transmission loss. $ Paper size applies to China National Standard (CNS) A4 (210X297 mm) TJl-'I n I n I-III ^^^ 1 I (Please read the notes on the back before filling this page) Order the intellectual property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives, printed by the Ministry of Economy ’s Intellectual Property Bureau ’s Consumer Cooperatives, printed 575892 A7 B7 V. Description of the Invention (19) (1) The circuit shown in Figure 33 for the Marginal Oscillation Countermeasure is because of the power of each circuit chain of GSM / DCS The wires are used in common, so a signal that leaks from the 3rdFET back to the IstFET through the power line's feed back loop 'can easily cause oscillation. In order to improve the influence of this feed back loop, the circuit not shown in Figure 4 of this Embodiment 1 is equipped with two power supply voltage terminals (Vddl, Vdd2). The power supply gain is highest through other power supply voltage terminals. IstFET power line to suppress feedback to IstFET and improve the oscillation margin. At the same time, in the GSM and DCS amplifier systems, because the air core coil 9 with a small DC resistance is used to form the inductor of the power line part of the 3rdFET, the DC loss is reduced, the power loss can be reduced, and the impedance can be improved. As a result, the feedback of the RF signal from the 3rdFET to the 2ndFET can be reduced, and the effect of the above-mentioned crossover architecture can be further improved to further increase the oscillation margin. (2) Use air-core coils for power lines to reduce transmission loss. As circuits become more compact and multifunctional, it is necessary to increase the mounting density of components, and strip lines must be placed inside the substrate. However, there are the following problems in arranging the power cord inside the substrate. ① Due to the decrease in characteristic impedance, high-frequency wave transmission loss (RF loss) increases. ② When lengthening the strip line as a countermeasure against RF loss, DC loss will increase. This paper is applicable to the Chinese National Standard (CNS) M specification (2KΓχ 297 mm) -22- (Please read the precautions on the back before filling this page)

575892 A7 B7 五、發明説明(2〇 ) ③加長帶狀線時,佔有面積增大,妨礙模組基板5之 小型化,亦即妨礙高頻電力放大裝置1之小型化。 (請先閱讀背面之注意事項再填寫本頁) 電源線之損失可粗分成配線電阻分之D C損失及阻抗成 分之RF損失。爲了降低D損失可以縮短電源線長度(帶狀 線長度),但電源線之阻抗會降低,使RF損失增加。 以下說明電源線之損失。 (1) D C損失 電源線有電流流通時,配線部分之雜散電阻分產生電 壓降,施加在FET之汲極端之電壓降低,會引起輸出降低 、效率降低。損失(DCloss : dB下式表示。 〔式1〕 損失=101og(Vdd · Idd)— lOlog { 〔 Vdd-(L/W)· Re · Idd 〕· Idd } 〔式2〕 電壓降= (L/W)· Re· Idd 在此,L係線長、W係線寬、R e係導體電阻。 經濟部智慧財產局員工消費合作社印製 (2) RF損失 分析電源線之阻抗與FET之汲極阻抗之關係之傳輸損 失時,使用模擬器 MDS(Microwave Design System)。 輸入信號源是FET時,可以使輸入爲非匹配,輸出爲 匹配進行計算,以可看出FET之電源線之影響之Ga(有能電 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -23 - 575892 A7 B7 五、發明説明(21 ) 力增益)進行計算。G a以下式表示。 〔式3〕 G a= | S21 | 2 · (1 - |「S I 2)/ { 1—| S22 I 2 + I「S I 2 ·〔(1 Sll | 2-I D I 2) 一 2Re( Sll - D · S22*) ]} 〔式4〕 D = S 1 1 · S 2 2 · S 1 2 · S 2 1 〔式5〕 RF 損失(dB) = 101og(Ga) 在此,S11 · S22 · S12 · S21係S參數,S11係輸入 阻抗、S12係隔離、S21係傳輸增益、S22係輸出阻抗、 S22*係輸出阻抗複數共軛、Re係實數部、「S係輸入反射係 數。 要減少電源線之RF損失,需要在第5圖所示之等效電 路加大電源線之組抗(Z2)。在第5圖,傳輸線之輸入(IN)與 輸出(0 U T)間設有長度L之電源線,而向電源線之一端供應 Vdd。在第5圖,Z0係電源線之特性阻抗、Z 1係傳輸線之 電源線連接部阻抗、Z2係電源線阻抗、L係電源線之長度 。在這種等效電路,可獲得下式。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐)· 24 _ (請先閲讀背面之注意事項再填寫本頁)575892 A7 B7 V. Description of the invention (20) ③ When the stripline is lengthened, the occupied area increases, which prevents the miniaturization of the module substrate 5, that is, the miniaturization of the high-frequency power amplifier device 1. (Please read the precautions on the back before filling out this page.) Power line losses can be roughly divided into DC loss in wiring resistance and RF loss in impedance. In order to reduce the D loss, the power line length (strip line length) can be shortened, but the impedance of the power line will be reduced, which will increase the RF loss. The loss of the power cord is explained below. (1) DC loss When there is current flowing in the power line, the stray resistance of the wiring part will generate a voltage drop. The voltage applied to the drain terminal of the FET will decrease, which will cause a decrease in output and efficiency. Loss (DCloss: dB is expressed by the following formula. [Formula 1] Loss = 101og (Vdd · Idd) — lOlog {〔Vdd- (L / W) · Re · Idd〕 · Idd} 〔Formula 2〕 Voltage drop = (L / W) · Re · Idd Here, L is the line length, W is the line width, and R e is the conductor resistance. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (2) RF loss analysis The impedance of the power line and the drain of the FET When the transmission loss is related to the impedance, the simulator MDS (Microwave Design System) is used. When the input signal source is a FET, the input can be mismatched and the output can be calculated to match, so that the influence of the power line of the FET can be seen. (The size of the paper used in this paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -23-575892 A7 B7 V. Description of the invention (21) Force gain). G a is expressed by the following formula. [Formula 3] G a = | S21 | 2 · (1-| 「SI 2) / {1— | S22 I 2 + I「 SI 2 · [(1 Sll | 2-IDI 2)-2Re (Sll-D · S22 *) ]} [Equation 4] D = S 1 1 · S 2 2 · S 1 2 · S 2 1 [Equation 5] RF loss (dB) = 101og (Ga) Here, S11 · S22 · S12 · S21 are S parameters , S11 series input impedance , S12 series isolation, S21 series transmission gain, S22 series output impedance, S22 * series output impedance complex conjugate, Re series real number part, "S series input reflection coefficient. To reduce the RF loss of the power line, you need to see The equivalent circuit shown increases the impedance of the power line (Z2). In Figure 5, a power line of length L is provided between the input (IN) and output (0 UT) of the transmission line, and Vdd is supplied to one end of the power line. In Figure 5, Z0 is the characteristic impedance of the power line, Z1 is the impedance of the power line connection part of the transmission line, Z2 is the impedance of the power line, and L is the length of the power line. In this equivalent circuit, the following formula can be obtained. This paper size applies to Chinese National Standard (CNS) Α4 size (210X297 mm) · 24 _ (Please read the precautions on the back before filling this page)

、1T 經濟部智慧財產局員工消費合作社印製 575892 A7 --___ B7 五、發明説明(22 ) 〔式6〕 1 Z 1 I = ( a2 + b2 ) 1 / 2 (請先閲讀背面之注意事項再填寫本頁) 〔式7〕 = ZO(ZL + jZO tanpL)/(ZO+jZOtanpL) 在此’ Z L (短線阻抗stub impedance)与〇 〔式8〕Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T, 575892 A7 --___ B7 V. Description of Invention (22) [Formula 6] 1 Z 1 I = (a2 + b2) 1/2 (Please read the notes on the back first (Fill in this page again) [Equation 7] = ZO (ZL + jZO tanpL) / (ZO + jZOtanpL) Here, 'ZL (stub impedance) and 〇 [Equation 8]

Z2rzjZ0tanPL 〔式 9〕 、 β == 2 π / λ 從此計算結果,若使帶狀線之長度爲λ/4 ,對基本波電 經濟部智慧財產局員工消費合作社印製 源線阻抗(Ζ2)成爲開路,阻抗爲無限大,但在電源線傳送之 信號在短路面(旁通電容器)反射而返回,方成爲開路,因此 發生傳輸損失,損失不會成爲零。因此,設計電源線時必 須從DC損失及RF損失之雙方面檢討,設計損失最小之條 件。 i 第6圖表示帶狀線之Z2與電源線損失之關係,可看出 DC損失及RF損失間存在有最合適點。亦即,頻道f在 900MHz、線寬度W在0.3mm、基板t(內層)0.3mm、基板電 介率sr在8.1時,上述最合適點之帶狀線長度爲12mm。 惟,將帶狀線配置在基板內層時,傳輸損失很大,約 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-25 - 575892 A7 B7 五、發明説明(23 ) 有〇,4dB,電力效率會降低。 (請先閲讀背面之注意事項再填寫本頁) 弟7圖及第8圖表不在電源線使用晶片電感器及空心線 圈時之傳輸損失。晶片電感器之傳輸損失可以較內層帶狀 線降低約1 /4,而且空芯線圈之DC損失可以較晶片電感器 之DC損失降低約1 /2左右。第9圖表示空芯線圈與晶片電 感器之DC損失之比較。因應用空芯線圈而獲得之損失之減 低若換算成電力效率,則較之內層帶狀線,相當於提高+5 % 〇 其次說明裝配高頻電力放大裝置1之行動電話機(電子 裝置)。第1 0圖係表示裝配本實施形態1之高頻電力放大裝 置1之行動電話機(無線電通信裝置)之系統架構之方塊圖。 具體上是表示行動電話機(行動通信終端)之系統架構。 第1 0圖係表示雙頻帶無線電通信機之一部分之方塊圖 ,表示從高頻信號處理IC (RF linear)50至天線(Antenna)51 之部分。再者,在第10圖,高頻電力放大裝置之放大系統 係分成GSM用之放大系統,及DCS用之放大系統表示之, 其放大器爲 PA (Power Amplifier)58a、58b。 經濟部智慧財產局員工消費合作社印製 天線5 1連接在天線送受信切換器52之天線端子 Antenna。天線送受信切換器52具備有,用以輸入PA58a、 PA58b之輸出之端子Poutl 、Pout2,接收端子Rxl 、Rx2 ,及控制端子 Control 1、Control 2。Z2rzjZ0tanPL [Eq. 9], β == 2 π / λ From this calculation result, if the length of the stripline is λ / 4, the source line impedance (Z2) printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Basic Electric Power and Economics becomes Open circuit, the impedance is infinite, but the signal transmitted on the power line is reflected on the short-circuit surface (bypass capacitor) and returns to open circuit, so transmission loss occurs, and the loss will not become zero. Therefore, when designing the power line, it is necessary to review both the DC loss and the RF loss, and the conditions for the minimum design loss. i Figure 6 shows the relationship between Z2 of the stripline and the power line loss. It can be seen that there is an optimal point between DC loss and RF loss. That is, when the channel f is 900 MHz, the line width W is 0.3 mm, the substrate t (inner layer) is 0.3 mm, and the substrate permittivity sr is 8.1, the strip line length at the above-mentioned optimum point is 12 mm. However, when the strip line is arranged on the inner layer of the substrate, the transmission loss is very large. About this paper size, the Chinese National Standard (CNS) A4 specification (210X297 mm) -25-575892 A7 B7 V. Description of the invention (23) Yes 〇, 4dB, power efficiency will decrease. (Please read the precautions on the back before filling out this page.) Figure 7 and Figure 8 do not show transmission loss when using chip inductors and hollow coils for power lines. The transmission loss of the chip inductor can be reduced by about 1/4 compared with the inner stripline, and the DC loss of the air-core coil can be reduced by about ½ compared with the DC loss of the chip inductor. Fig. 9 shows a comparison of DC loss between an air-core coil and a chip inductor. If the reduction of the loss due to the application of air-core coils is converted into power efficiency, it is equivalent to an increase of + 5% compared to the inner stripline. 〇 Next, the mobile phone (electronic device) equipped with the high-frequency power amplifier device 1 will be described. Fig. 10 is a block diagram showing a system architecture of a mobile phone (radio communication device) equipped with the high-frequency power amplifying device 1 of the first embodiment. Specifically, it represents the system architecture of a mobile phone (mobile communication terminal). Fig. 10 is a block diagram showing a part of a dual-band radio communication device, showing a part from a high-frequency signal processing IC (RF linear) 50 to an antenna (Antenna) 51. Furthermore, in FIG. 10, the amplification system of the high-frequency power amplification device is divided into an GSM amplification system and a DCS amplification system. The amplifiers are PA (Power Amplifier) 58a, 58b. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Antenna 5 1 is connected to the antenna terminal Antenna of the antenna transmitting and receiving switch 52. The antenna transmitting / receiving switch 52 includes terminals Poutl and Pout2 for inputting the outputs of PA58a and PA58b, receiving terminals Rxl and Rx2, and control terminals Control 1 and Control 2.

從高頻信號處理IC50送出之GSM用之信號被送至 PA5 8a,輸出到P〇utl。PA58a之輸出由藕合器54a檢出, 此檢出信號回授到自動輸出控制電路(APC電路)53 。APC 本紙張尺度適用中國國家標準了CNS ) A4規格(210X297公釐) ^26 " ' 575892 A7 B7 五、發明説明(24 ) 電路53則依上述檢出信號動作,控制PA58a。 (請先閱讀背面之注意事項再填寫本頁) 同樣地,高頻信號處理IC50送出之DCS用之信號被送 至PA58b,輸出到Pout2。PA58b之輸出由藕合器54b檢出 ,此檢出信號回授到自動輸出控制電路(APC電路)53。APC 電路53則依上述檢出信號動作,控制PA58b。 天線送受信切換器52備有雙工器55。此雙工器55具 有端子,1個端子連接在上述天線端子Antenna,另外兩個 端子內之一方連接在GSM用之發送接收切換開關56a ,另 一方則連接在DCS用之發送接收切換開關56b。 發送接收切換開關56a之a接點係經由濾波器57a連接 在Poutl。發送接收切換開關56a之b接點係經由電容器C1 連接在接收端子Rxl。發送接收切換開關56a係依據輸入控 制端子control 1之控制信號進行切換與a接點或與b接點之 電氣接續。 經濟部智慧財產局員工消費合作社印製 而發送接收切換開關56b之a接點係經由濾波器57b連 接在P〇ut2。發送接收切換開關56b之b接點係經由電容器 C2連接在接收端子Rx2。發送接收切換開關56b係依據輸 入控制端子control 2之控制信號進行切換與a接點或與b接 點之電氣接續。 在接、收端子Rxl與高頻信號處理I C50之間,依序連接 有濾波器60a及低雜訊放大器(LNA)61a。同時,在接收端 子Rx2與高頻信號處理I C50之間,依序連接有濾波器60b 及低雜訊放大器(LNA)61b。 可藉由此無線電通信裝置進行GSM通信及DCS通信。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ~27魏 ~ 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(25 ) 其次說明製造高頻電力放大裝置1時之空芯線圈9之安 裝技術。安裝空芯線圈9時,係使用如第1 1圖所示之半導 體製造裝置之散粒物供料器2 1 。本實施形態1之散粒物供 料器2 1係改良第34圖所示之散粒物供料器使其能穩定供應 空芯線圈9者。 散粒物供料器2 1與傳統品同樣具有散粒物收容箱1 〇、 漏斗1 1 、運送軌13、散粒物供應部12,但是爲了能穩定 供應空心線圈’①在漏斗1 1部分進行改良,達成可抑制空 芯線圈9在供應軸1 8上停止下來,空芯線圈9被捲入供應 軸1 8與圓錐台凹部1 5之間,空芯線圈9阻塞在供應軸1 8之 引導孔Π內等之事故。 ② 同時,運送軌1 3係以單一構件形成引導孔17,以免 空芯線圈9鉤到接頭部分。 ③ 同時,爲了消除以縱列狀態排成一列前進之空芯線 圈9之前頭之空芯線圈9 ,與後續之空芯線圈9之端部相 纏,在散粒物供應部12引進能夠在用筒夾32保持空芯線圈 9前之階段,分離前頭之空芯線圈9與後續之空芯線圈9之 構件。 使用這種散粒物供料器2 1之空芯線圈9安裝(半數裝置 之製造方法),係如第1 1圖所示,令設在移動臂33前端之 筒夾32在散粒物供應部丨2與載置模組基板5之平抬34間如 箭頭所示移動,以安裝空芯線圈9。這時是在後述之機構 下,使前頭之空芯線圈9與後續之空芯線圈9分開後,以筒 夾32真空吸著保持空芯線圈9。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-28 - (請先閱讀背面之注意事項再填寫本頁)The signal for GSM sent from the high-frequency signal processing IC50 is sent to PA5 8a and output to Point. The output of PA58a is detected by the coupler 54a, and this detection signal is fed back to the automatic output control circuit (APC circuit) 53. APC This paper size applies the Chinese national standard CNS) A4 specification (210X297 mm) ^ 26 " '575892 A7 B7 V. Description of the invention (24) The circuit 53 operates according to the above detection signal to control PA58a. (Please read the precautions on the back before filling this page.) Similarly, the DCS signal sent by the high-frequency signal processing IC50 is sent to PA58b and output to Pout2. The output of PA58b is detected by the coupler 54b, and this detection signal is fed back to the automatic output control circuit (APC circuit) 53. The APC circuit 53 operates in accordance with the detection signal and controls the PA58b. The antenna transmitting / receiving switch 52 is provided with a duplexer 55. This duplexer 55 has terminals. One terminal is connected to the antenna terminal Antenna, one of the other two terminals is connected to the GSM transmission / reception switch 56a, and the other is connected to the DCS transmission / reception switch 56b. The a contact of the transmission / reception switch 56a is connected to Poutl via a filter 57a. The b-contact of the transmission / reception switch 56a is connected to the reception terminal Rx1 via a capacitor C1. The transmission / reception changeover switch 56a is switched according to the control signal of the input control terminal control 1 and is electrically connected to the a contact or the b contact. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the a contact of the send / receive switch 56b is connected to Port 2 via the filter 57b. The b-contact of the transmission / reception switch 56b is connected to the reception terminal Rx2 via a capacitor C2. The send / receive switch 56b is switched according to the control signal of the input control terminal control 2 and is electrically connected to the a contact or the b contact. A filter 60a and a low-noise amplifier (LNA) 61a are sequentially connected between the receiving and receiving terminals Rx1 and the high-frequency signal processing IC50. At the same time, a filter 60b and a low noise amplifier (LNA) 61b are sequentially connected between the receiving terminal Rx2 and the high-frequency signal processing IC50. This radio communication device can perform GSM communication and DCS communication. This paper scale applies Chinese National Standard (CNS) A4 specification (210X297 mm) ~ 27 Wei ~ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 575892 A7 B7 V. Description of the invention (25) Next, the manufacture of high-frequency power amplifiers 1 Mounting technology of the air core coil 9 at the time. When the air-core coil 9 is mounted, a loose-grain feeder 2 1 as shown in FIG. 11 is used. The granular material feeder 21 of the first embodiment is a modified granular material feeder shown in Fig. 34 so that it can stably supply the air-core coil 9. The granular material feeder 2 1 has a granular material storage box 1 0, a hopper 11, a transport rail 13, and a granular material supply unit 12 similar to a conventional product. However, in order to stably supply a hollow coil, '① is included in the hopper 1 1 section. Improvements were made to prevent the air-core coil 9 from stopping on the supply shaft 18, the air-core coil 9 being caught between the supply shaft 18 and the conical recess 15, and the air-core coil 9 blocked on the supply shaft 18 Accidents in the pilot hole. ② At the same time, the guide rails 13 and 3 are formed with a single hole 17 to prevent the air-core coil 9 from being hooked to the joint portion. ③ At the same time, in order to eliminate the air-core coils 9 in front of the air-core coils 9 that are arranged in a row in a tandem state, and entangle with the ends of the subsequent air-core coils 9, introduce them into the loose particle supply unit 12 and be used. The collet 32 holds the stage before the air-core coil 9 and separates the components of the front air-core coil 9 and the subsequent air-core coil 9. The installation of the air-core coil 9 using this granular material feeder 21 (the manufacturing method of half of the devices) is shown in FIG. 11, and the collet 32 provided at the front end of the moving arm 33 is supplied to the granular material. The section 2 and the flat lifting 34 of the mounting module substrate 5 are moved as shown by arrows to install the air-core coil 9. At this time, the air-core coil 9 at the front is separated from the air-core coil 9 at a later stage under the mechanism described later, and the air-core coil 9 is held by the collet 32 under vacuum suction. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -28-(Please read the precautions on the back before filling this page)

575892 A7 B7 五、發明説明(26 ) 同時’此空心線圈9之安裝,係在安裝高度較空芯線 圈9低之晶片電阻或晶片電容器等其他電子零件之後進行 。這時因爲如果先安裝空芯線圈9 ,則在安裝高度較空芯 線圈9低之電子零件時,筒夾3 2有時會接觸到已安裝之空 芯線圈9。因此會’例如在連接空芯線圈9之電極2 3與電 極固定用焊接區4b之焊錫24部分發生龜裂,或斷裂。因此 要避免發生追種事故。 桌1 2圖(a)〜(c)係表不空芯線圈9之安裝狀態之模式圖 。將由散粒物供料器21之散粒物供應部12供給之空芯線圈 9真空吸著保持在筒夾32下端之吸著面後,如第12圖(a)所 示’運送到模組基板5之空芯線圈之安裝位置(參照第丨2圖 U))。再者,筒夾32之吸著面係呈圓弧狀截面,以便對應 圓筒形狀之空芯線圈之外周。 接著,如第12圖(b)所示,使空芯線圈9之一對電極23 分別重疊在模組基板5之一對電極固定用焊接區4b上,完 成空芯線圈9之定位後,將空芯線圈9載置於模組基板5上 〇 然後,藉回流(reflow),暫時性溶化預先設在電極固定 用焊接區4b上之焊錫24,將電極23固定在焊錫24上,而 如第12圖(c)所示完成安裝。 其次,在參照第1 1圖乃至第25圖,說明散粒物供料器 2 1。第1 1圖及其他之圖式均係省略一部分之簡圖,以下係 以傳統之散粒物供料器之改良部分爲主進行說明。 如第11圖所示,本實施形態1之散粒物供料器2 1具備 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -29- 575892 A7 B7 五、發明説明(27 ) (請先閲讀背面之注意事項再填寫本頁) 有,收容散粒物之散粒物收容箱10、設在此散粒物收容箱 10之下部之漏斗1 1、將從此漏斗1 1取進之散粒物引導至前 端之散粒物供應部1 2之運送軌13。 散粒物收容箱1 0呈薄箱型構造,其內底成爲從兩側向 中央集中散粒物之傾斜體1 4。在此傾斜體1 4之中心配置有 上下貫穿其中心部分之漏斗1 1。此漏斗1丨具有可將集中至 傾斜體1 4之內底部分之散粒物排成一列狀態從散粒物收容 箱1 0取出之構造。本實施形態1將說明以空芯線圈作爲散 粒物供應之例子。 漏斗1 1係如第1 3圖及第14圖所示,由上端有圓錐台 凹部15之導件1 6,及貫穿此導件16具有沿中心軸成一列 縱列狀態(後續之空芯線圈9之前端之電極接觸到前頭之空 芯線圈9之後端之電極排列之狀態)引導空芯線圈9之引導 孔17之供應軸18,所構成。供應軸18以圓筒體形成,中 央有圓形截面之引導孔17 。空芯線圈9之最大外徑爲 0.56mm,長度爲 〇.9mm。 經濟部智慧財產局員工消費合作社印製 爲了避免空芯線圈成橫向進入引導孔17而阻塞,本實 施形態1之引導孔17之直徑尺寸較空芯線圈9之長度0.9mm 爲小,較空芯線圈9之最大外徑爲0.56mm爲大。例如,引 導孔17爲0.6 8mm。藉此,空芯線圈9不會成橫方向阻塞引 導孔17。 同時,如第1 3圖所示,導件16可例如以空芯線圏9之 長度(0.9mm)之3倍之衝程上下振動,藉此將散粒物收容箱 10內之空芯線圈9引導至圓錐台凹部15之中心。在此振動 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公董1 30 - " 575892 A7 B7 五、發明説明(28 ) (請先閱讀背面之注意事項再填寫本頁) 時,供應軸1 8之上部端不會突出到供應軸1 8之圓錐台凹部 1 5內。在圖上,導件1 6在下死點之狀態時,供應軸1 8之上 端與圓錐台凹部1 5底相一致。 因此,不會發生如傳統之空芯線圈9被夾入供應軸1 8 之外周面與圓錐台凹部1 5面間之現象,因此不會發生空芯 線圈9之變形或裝置之故障。 第15圖係運送軌13之放大模式圖。運送軌13也設有 連通於上述供應軸18之引導孔17之引導孔17a。此引導孔 17a在第15圖係以模式方式表示,具體上是在一定之構件 設溝,再阻塞此溝以形成引導孔17a。而運送軌13之前端 則成爲散粒物供應部1 2。而從供應軸1 8至散粒物供應部1 2 之引導孔1 7a ,係以單一之構件構成。運送軌1 3係組合多 數構件而成。對此等構件之說明從略,例如構件之組合係 如第1 6圖所示。第1 6圖之真空吸引通路係以管路構成,但 也省略未圖示。 線泰 經濟部智慧財產局員工消費合作社印製 依據本實施形態丨之散粒物供料器2 1時,因爲在運送 軌1 3之途中沒有空芯線圈9會鉤到之接縫,因此可以藉此 引導孔1 7a順暢將空芯線圈9移送到散粒物供應部1 2。此 項移送係由未圖示之真空吸引機構爲之。運送軌1 3之左端 安裝有連接在真空吸引機構之管道35。此管道35係通過構 成運送軌1 3之運送軌本體25之下部內部延伸至散粒物供應 部1 2,連通於後述之真空吸引通路。而從散粒物供應部12 將真空吸引之空芯線圈9移送至散粒物供應部1 2側。因此 ,由於空芯線圏9被真空吸引移送,前後之空芯線圈9會強 -31 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X29<7公釐) 575892 A7 B7 五、發明説明(29 ) 力接觸,成爲相互之端部互纏之原因。 在第15圖乃至第Π圖,於引導孔17a之一部分,爲了 檢出通過之空芯線圈9 ,配設有發光元件36,以及接收從 該發光元件3 6發光之光線3 7之受光元件3 8。若空芯線圈9 滿到此感測位置,漏斗之昇降便停止下來,成爲線圈無法 進入供應軸之狀態。 散粒物供應部1 2之構造係如第1 8圖所示,其動作係如 第1 8圖至第25圖所示。散粒物供應部1 2係如第1 8圖所示 ,在運送軌1 3之前端側,於運送軌本體25之前端上面側具 有降低一台階之凹部。而在此凹部安裝有可以沿空芯線圈9 之移送方向來回移動之滑動子26。其來回移動之衝程爲, 例如空芯線圈9之長度之約一半(0.5st)(參照第23圖)。 引導空芯線圈9之引導孔17a延伸到上述滑動子26之 左端。而如第1 9圖所示,在滑動子2 6之左端設有可以收容 1個空芯線圈9之承接部40。此承接部40之一端,亦即在 離開引導孔17a端之右端設有停止部28 ,靠近引導孔17a 端之左端則設有突部4 1。 停止部28成爲決定在引導孔17a內前進而掉落承接部 40之前頭之空芯線圈9之前端位置之基準面。突部4 1具有 ,如上述,滑動子26向離開引導孔17a端之方向移動(前進 )時,使前頭之空芯線圈9確實前進而從後推之作用(關於突 部4 1請參照第2 3圖)。 在滑動子26,停止部28接觸在空芯線圈9前端之上側 ,其下部成爲部分開放之空間。此空間部分形成,真空吸 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(30 ) 著空芯線圈9使其抵接停止部28用之真空吸引通路30a。 本實施形態1係基於,使前頭之空芯線圈9向與前進方 向交叉之方向移動,藉此使前頭之空芯線圈9與後續之空 芯線圈9分開,以杜絕雙方互纏之構想,而採用令引導孔 17a低一階之架構。同時基於,使前頭之空芯線圈9與後續 之空芯線圈9分開,以杜絕雙方互纒之構想,採用使滑動 子26前進0.5st之架構。 因此,若從使前頭之空芯線圈9與後續之空芯線圈9分 開,以杜絕雙方互纏之想法,則也可以採用,不設突部4 1 ’承接部40則配設在引導孔1 7a之延長線上,而只有停止 部28之架構。亦即,引導孔17a之底面與承接部40之支撐 空芯線圈9之面在同一平面。這也是本發明之另一架構。 在本實施形態1 ,由於承接部40較引導孔17a之高度 低,因真空吸引而前進到承接部40之前頭之空芯線圏9將 掉落承接部40內,前端接觸到停止部28而進行定位。藉此 ,前頭之空芯線圈9便離開後續之空芯線圈9。 滑動子26呈框架構造,但此滑動子26之框內至上面設 有檔門3 1。進入滑動子26之框內之檔門部分與此檔門部分 之間安裝有彈簧42 ,利用其彈簧42之彈力恆常將檔門3 1 推壓在引導孔17a之端側。 檔門31之左端部分阻塞引導孔17a之前端上側。因此 ,檔門31向右側移動(前進)時,會在引導孔17a之前端側 露出數個空芯線圈9 ,同時,依其前進長度,也會使滑動 子26之承接部40上之空芯線圈9 (前頭之空芯線圈9 )露出 (請先閲讀背面之注意事項再填寫本頁)575892 A7 B7 V. Description of the invention (26) At the same time, the installation of this hollow coil 9 is performed after mounting other electronic parts such as chip resistance or chip capacitor with a lower height than the hollow core coil 9. At this time, if the air-core coil 9 is installed first, the collet 32 may sometimes touch the installed air-core coil 9 when installing electronic parts having a lower height than the air-core coil 9. Therefore, for example, cracks or breaks may occur in the portion of the solder 24 connecting the electrode 23 of the air-core coil 9 and the electrode fixing pad 4b. Therefore, it is necessary to avoid chase accidents. Tables 12 and 2 (a) to (c) are model diagrams showing the installation state of the air-core coil 9. After vacuum-holding the air-core coil 9 supplied from the granular material supply unit 12 of the granular material feeder 21 to the suction surface at the lower end of the collet 32, it is transported to the module as shown in FIG. 12 (a). The installation position of the air-core coil of the substrate 5 (refer to FIG. 2). Furthermore, the suction surface of the collet 32 has an arc-shaped cross section so as to correspond to the outer periphery of a cylindrical air-core coil. Next, as shown in FIG. 12 (b), one pair of electrodes 23 of the air-core coil 9 are superimposed on one pair of electrode fixing pads 4b of the module substrate 5, respectively. After positioning of the air-core coil 9 is completed, The air-core coil 9 is placed on the module substrate 5. Then, by reflow, the solder 24 previously provided on the electrode fixing pad 4b is temporarily dissolved, and the electrode 23 is fixed on the solder 24, as in the first step. Figure 12 (c) completes the installation. Next, the loose particle feeder 21 will be described with reference to FIGS. 11 to 25. Figure 11 and other diagrams are simplified diagrams with a part omitted, and the following description is mainly based on the improved part of the traditional bulk feeder. As shown in Figure 11, the granular feeder 2 1 of this embodiment 1 has the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling in this Page) Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -29- 575892 A7 B7 V. Description of the invention (27) (Please read the precautions on the back before filling out this page) Yes, the storage of loose particles Box 10, a funnel 11 provided at the lower part of the granular material storage box 10, and the granular material taken in from the funnel 11 is guided to a conveying rail 13 of the granular material supply section 12 at the front end. The granular material storage box 10 has a thin box-shaped structure, and the inner bottom thereof is an inclined body 14 that concentrates the granular material from both sides to the center. A funnel 11 is arranged at the center of the inclined body 14 so as to penetrate the central portion thereof. This hopper 1 丨 has a structure capable of arranging the loose particles concentrated on the inner bottom portion of the inclined body 14 from the loose particle storage box 10 in a line. In the first embodiment, an example in which air-core coils are supplied as loose particles will be described. The funnel 11 is shown in FIG. 13 and FIG. 14, and includes a guide 16 with a truncated concavity 15 at the upper end, and a penetrating state through the guide 16 along a central axis (a subsequent air-core coil). (9) A state in which the front electrode is in contact with the front-end air-core coil (9). The state in which the electrodes are arranged at the rear end of the air-core coil (9) is a supply shaft 18 that guides the guide hole 17 of the air-core coil 9. The supply shaft 18 is formed as a cylindrical body, and a guide hole 17 having a circular cross section is formed in the center. The maximum outer diameter of the air-core coil 9 is 0.56 mm, and the length is 0.9 mm. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in order to prevent the air-core coil from blocking into the guide hole 17 in a horizontal direction. The maximum outer diameter of the coil 9 is 0.56 mm. For example, the guide hole 17 is 0.6 8 mm. This prevents the air-core coil 9 from blocking the guide hole 17 in the horizontal direction. At the same time, as shown in FIG. 13, the guide 16 can vibrate up and down, for example, at a stroke three times the length (0.9 mm) of the hollow core wire 9, thereby guiding the hollow core coil 9 in the loose particle storage box 10. To the center of the truncated cone 15. Here, the dimensions of this paper apply the Chinese National Standard (CNS) A4 specification (210X297 Public Manager 1 30-" 575892 A7 B7) V. Description of the invention (28) (Please read the precautions on the back before filling this page), supply The upper end of the shaft 18 will not protrude into the conical recess 15 of the supply shaft 18. In the figure, when the guide 16 is at the bottom dead center, the upper end of the supply shaft 18 and the bottom of the conical recess 15 Therefore, the phenomenon that the conventional air-core coil 9 is sandwiched between the outer peripheral surface of the supply shaft 18 and the conical recess 15 surface does not occur, so the deformation of the air-core coil 9 or the failure of the device does not occur. Fig. 15 is an enlarged schematic view of the transport rail 13. The transport rail 13 is also provided with a guide hole 17a that communicates with the guide hole 17 of the supply shaft 18. The guide hole 17a is shown in a schematic manner in Fig. 15, specifically, A groove is formed in a certain member, and the groove is blocked to form a guide hole 17a. The front end of the transport rail 13 becomes the loose particle supply section 12 and the guide from the supply shaft 18 to the loose particle supply section 12 The hole 17a is composed of a single member. The transport rail 1 3 is composed of a plurality of members. The description of these components is omitted, for example, the combination of components is shown in Figure 16. The vacuum suction passage of Figure 16 is formed by pipelines, but it is not shown in the figure. When the Intellectual Property Bureau employee consumer cooperative prints the loose particle feeder 21 according to this embodiment 丨, there is no seam to which the hollow core coil 9 will hook during the transportation of the rail 13, so the hole can be guided by this 17a smoothly transfers the air-core coil 9 to the granular material supply unit 12. This transfer is performed by a vacuum suction mechanism (not shown). A pipe 35 connected to the vacuum suction mechanism is installed at the left end of the transport rail 13. This pipe 35 extends through the interior of the lower portion of the transport rail body 25 constituting the transport rail 13 to the loose particle supply unit 12 and communicates with a vacuum suction passage described later. The vacuum core is sucked from the loose particle supply unit 12 by vacuum. The coil 9 is transferred to the side of the bulk material supply unit 12. Because the hollow core wire 圏 9 is sucked and transferred by the vacuum, the front and rear core coils 9 will be stronger -31-This paper size applies the Chinese National Standard (CNS) A4 specification (210X29 < 7 mm) 575892 A7 B7 V. Hair Explanation (29) The force contact becomes the cause of mutual entanglement of each other. In Fig. 15 to Fig. Π, a light-emitting element 36 is provided in a part of the guide hole 17a to detect the passing of the air-core coil 9, And the light receiving element 38 which receives the light 37 emitted from the light emitting element 36. If the air-core coil 9 is full to this sensing position, the lifting of the funnel stops and the coil cannot enter the supply shaft. The structure of the supply unit 12 is shown in Fig. 18, and its operation is shown in Fig. 18 to 25. As shown in FIG. 18, the granular material supply portion 12 has a recessed portion lowered by one step on the front end side of the transport rail 13 and on the front side of the front end of the transport rail body 25. A slider 26 is installed in the recess to move back and forth in the direction in which the air-core coil 9 is moved. The stroke of the back and forth movement is, for example, about half (0.5st) of the length of the air-core coil 9 (refer to FIG. 23). The guide hole 17a for guiding the air-core coil 9 extends to the left end of the slider 26 described above. As shown in FIG. 19, a receiving portion 40 is provided at the left end of the slider 26 to accommodate one air-core coil 9. A stop portion 28 is provided at one end of the receiving portion 40, that is, at the right end away from the end of the guide hole 17a, and a protrusion 41 is provided at the left end near the end of the guide hole 17a. The stopper portion 28 serves as a reference plane for determining the position of the front end of the air-core coil 9 which is advanced in the guide hole 17a and falls before the receiving portion 40. The protrusion 41 has the function of moving the slider 26 forward (forward) away from the end of the guide hole 17a as described above, so that the front core coil 9 is moved forward and pushed backward. 2 3 pictures). In the slider 26, the stopper portion 28 is in contact with the upper side of the front end of the air-core coil 9, and the lower portion thereof becomes a partially open space. This space is partially formed. The vacuum paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page). Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative 575892 A7. B7 V. Description of the invention (30) The vacuum suction passage 30a for the air-core coil 9 to be brought into contact with the stopper portion 28. The first embodiment is based on the idea of moving the front air-core coil 9 in a direction crossing the forward direction, thereby separating the front air-core coil 9 and the subsequent air-core coil 9 so as to prevent the mutual entanglement of both sides. A structure in which the guide hole 17a is lowered by one step is adopted. At the same time, based on the separation of the front air-core coil 9 and the subsequent air-core coil 9 in order to prevent the mutual conflict between the two parties, a structure that advances the slider 26 by 0.5 st is adopted. Therefore, if the front air-core coil 9 and the subsequent air-core coil 9 are separated to prevent the two sides from being entangled, it can also be adopted. The projection 4 1 is not provided, and the receiving portion 40 is disposed in the guide hole 1. 7a extension line, and only the structure of the stop section 28. That is, the bottom surface of the guide hole 17a and the surface of the receiving portion 40 supporting the air-core coil 9 are on the same plane. This is another architecture of the present invention. In the first embodiment, since the height of the receiving portion 40 is lower than the guide hole 17a, the hollow core wire 9 that is advanced to the front of the receiving portion 40 due to vacuum suction will fall into the receiving portion 40 and the front end contacts the stopping portion 28 to perform Positioning. As a result, the former air-core coil 9 leaves the subsequent air-core coil 9. The slider 26 has a frame structure, but the slider 26 is provided with a door 3 1 from the inside to the top of the frame. A spring 42 is installed between the door portion that enters the frame of the slider 26 and the door portion. The spring 42 is used to constantly push the door 3 1 against the end of the guide hole 17a. The left end portion of the gate 31 blocks the upper side of the front end of the guide hole 17a. Therefore, when the gate 31 is moved to the right (forward), a number of air-core coils 9 are exposed at the front end side of the guide hole 17a. At the same time, depending on the advance length, the air-cores on the receiving portion 40 of the slider 26 are also caused. Coil 9 (the air-core coil 9 at the front) is exposed (please read the precautions on the back before filling this page)

、1T 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) -33 - 575892 A7 B7 五、發明説明(31 ) 〇 0—, (請先閱讀背面之注意事項再填寫本頁) 檔門31及運送軌本體25也設有真空吸引通路30b、 30c、30d、30e。真空吸引通路3〇d係圓形截面之孔,在 運送軌本體25之凹部底滾動之球體43可進入此孔,以阻塞 此孔,亦即,阻塞真空吸引通路30d。如第18圖及第19圖 所示’檔門3 1後退到最靠左端時,以設在檔門3丨之球體控 制面44使球體43向左側移動(後退),因此,使球體43脫離 孔,成爲真空吸引狀態。該圖之粗線箭頭表示真空吸引用 空氣之流向。 如第20圖及第21圖所示,檔門31向右側移動(前進)0. 5 s t時,上述球體控制面44從孔向右側偏離,因此,真空 吸引力使球體43移動,一部分進入孔內,阻塞真空吸引通 路30d ,停止真空吸引動作。真空吸引動作停下來後,空 芯線圈9相互間之因真空吸引而產生之密接力消失。再者 ,空吸引通路30e連在真空吸引機構之管道35 。而因真空 吸引,後續之空芯線圈9便在引導孔1 7內排成一列。 經濟部智慧財產局員工消費合作社印製 其次,說明在這種在散粒物供應部1 2之空芯線圈9之 供應方法。在開始供應空芯線圈9時之狀態係如第1 8圖及 其放大圖之第19圖所示,滑動子26及檔門3 1均在移動至 左側之後退狀態。在此狀態下,如粗線箭頭所示’進行真 空吸引,引導孔17a內之空芯線圈9將以前頭之空芯線圈9 接觸於停止部28之狀態,成縱列狀態排成一列。圖中(以下 之各圖也一樣)係表示從前頭起之3個空芯線圈9 °前頭起 之空芯線圈9將進入承接部40內,而如第19圖所示,前頭 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)_ 34 - 575892 A7 B7 五、發明説明(32 ) ~" 之空芯線圈9與後續之空芯線圏9成互纏被分開之狀態。 (請先閲讀背面之注意事項再填寫本頁) 其次’如第2 0圖及其放大圖之第2 1圖所示,如箭頭所 不’因停止真空吸引而向右前進。此因停止真空吸引而前 進之長度爲空芯線圈9之長度之約一半,亦即〇.5st 。因檔 門31則進,球體43從被球體控制面44之控制釋放,成爲 自由狀態,而因真空吸引力而滾動,阻塞真空吸引通路3 〇 d 。這時,檔門31之左端,與被覆引導孔17a之運送軌本體 25部分之端部之間,亦即’與開口端46之間之間隔爲〇.5st ’隱藏之空芯線圈9之上面側成爲露出一部分之狀態。惟 ’承接部40上之前頭之空芯線圈9則由檔門3 1加以遮蔽。 經濟部智慧財產局員工消費合作社印製 其次’如第22圖及其放大圖之第23圖所示,滑動子26 如箭頭所示向右前進。此項前進之長度爲空芯線圈9之長 度之約一半,亦即0.5 st。因檔門31成跨乘在滑動子26上 之狀態,因此檔門31也前進〇. 5 s t,檔門31之左端,與 被覆引導孔17a之運送軌本體25部分之端部之間,亦即, 與開口端46之間之間隔爲1 s t。雖然滑動子26移動,但 因真空吸引已停止,因此,前頭之空芯線圏9便獨自移動 運送分量’後面(第2個)之空芯線圈9則殘留在引導孔17a 內。藉此,前頭之空芯線圈9與後面之空芯線圈9便完全被 分離。在此狀態下,承接部40上之前頭之空芯線圈9係由 檔門3 1檔住。 其次,如第24圖及其放大圖之第25圖所示,檔門31 如箭頭所示向右前進。此項前進係爲了使被檔門3 1檔住之 承接部40上之前頭之空芯線圈9露出,雖不特別限定,但 本紙張尺^適用中國國家標準(〇奶)八4規格(210、乂297公釐) .' 575892 A7 B7 五、發明説明(33 ) 使檔門3 1之左端與上述開口端46間之間隔爲例如3 st。 成爲這種狀態後,筒夾3 2便移動過來,真空吸著保持 承接部40上之空芯線圈9。這時,因爲空芯線圈9未與其 他空芯線圏9纏在一起,因此被正確且確實保持在筒夾3 2 。筒夾32係如第Π圖及第12圖(a)〜(c)所示,運送空芯線 圈9供給模組基板5上。 第26 _及第27圖表示使用本實施形態1之散粒物供料 器搭載於模組基板5之其他構造之空芯線圈9。而此搭載之 空芯線圈9係如第28圖乃至第30圖所示。如第29圖所示, 將銅線47之一部分之表面被覆聚乙烯等之絕緣膜48之線材 ’以各繞線部分相互密接狀捲成螺旋狀。如第30圖所示, 銅線47之直徑a爲例如0.1mm,線圈之內徑d係例如〇.3mm 。其結果,線圈之最大直徑D爲例如0.56mm。而線圈端之 捲線部分之從最大直徑D突出之部分之長度α爲0〜30μιη前 後。而且,如第29圖所示,空芯線圈9之長度(全長)L爲 〇· 8 m m前後。 經濟部智慧財產局員工消費合作社印製 此空芯線圏9以3匝部分形成電感器部22 ,其兩端之 電極23爲2匝前後。要改變電感或電極之連接長度時,分 別改變其匝數即可。第31圖(a)、(b)係表示電感器部22爲2 匝及1匝之空芯線圈9之例子。 依據本實施形態1時,可以收到如下述之效果。 (1)空芯線圈之直流電阻較晶片電感器小。因此當作連 接在多級架構之放大系統之最後放大級之電感器使用時’ D C損耗很少,可以使損失小,阻抗很高。因此,可以達成 -36- 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 B7 五、發明説明(34 ) 減低從最後放大級向其前級之高頻信號之回授之目的’可 以提高振盪邊際。因此’裝配振盪邊際獲得改善之本實施 形態1之高頻電力放大裝置之行動電話之通話性能很好。 使用本實施形態1之線圈時’例如舉其一例,電源線之損 失對特性之影響爲,對損失0.1 dB之改善’輸出會提高 + 0.1 dB,電力則可以提高約+1 %。 (2) 因爲是雙頻構成’而供給兩個放大系統之電源電壓 係成交叉架構,因此,可以抑制從後級放大級(特別是最後 級放大級)漏到初級放大級之漏洩信號通過電源線回授,因 此可以改善振盪邊際。這一點在使用如(1)所示之空芯線圈 時,更可改善振盪邊際。 (3) 空芯線圈9係將表面被覆絕緣膜48之銅線47緊密 捲成螺旋狀之架構,因此製造成本僅及傳統之晶片電感器 之1/7〜1/2程度,十分廉價。因此,與連接在最後級放大級 之成本很高之晶片電感器比較,可以將成本降低到1 /7前後 。若將其他部分使用之晶片電感器改用本發明之空芯線圈 ,則其成本可以降到1/2前後。藉此可以減低高頻電力放大 經濟部智慧財產局員工消費合作社印製 裝置之成本。因此,裝配此高頻電力放大裝置之行動電話 機(無線電通信裝置)之製造成本也可以降低。 (4) 空芯線圈9之最大外徑在0.56mm前後,長度在 0.9mm前後,其安裝長度較傳統之寬度及高度〇.5mm,長度 1mm之晶片電感器之安裝長度短。 (5) 製造高頻電力放大裝置時使用散粒物供料器21搭 載空芯線圈9,可以有以下所述之效果。 -37- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 B7 五、發明説明(35 ) (請先閱讀背面之注意事項再填寫本頁) ① 搭載於模組基板5之電子零件中’空芯線圈9之高度 最高,但是,是在搭載其他電子零件後方安裝。因此’真 空吸著保持空芯線圈9之筒夾32不接觸到已經搭載於模組 基板5之電子零件,不會損及其他電子零件。其結果’可 以提高安裝完成率。 ② 使用筒夾32真空吸著保持移送到散粒物供料器2 1之 散粒物供應部1 2而排成一列之空芯線圈9之前頭之空芯線 圈9後,運送到模組基板5之一定位置,然後藉暫時性之加 熱處理溶融預先設在模組基板5或空芯線圈9之焊錫24而 加以固定,因爲在散粒物供應部係將後續之空芯線圈9與 前頭之空芯線圈9分開供應,因此不會發生後續之空芯線 圈9重疊在前頭之空芯線圈9,或鉤住而發生之筒夾32之 真空吸著保持失誤,可以正確且確實完成安裝,同時安裝 作業也很簡單。因此,很少發生安裝不良或機械停止之事 故,可以降低安裝成本。 經濟部智慧財產局員工消費合作社印製 ③ 漏斗部分因筒狀之供應軸1 8之厚度變薄,因此空芯 線圏9(散粒物)不會跨乘在上端,對散粒物供應部可以確實 供應空芯線圈9,進行穩定之安裝。 ④ 在漏斗部分係成爲,在導件1 6降到最下方之狀態時 ,供應軸1 8之外周面與導件1 6之圓錐台凹部1 5之間不會 產生能夾住散粒物之空隙之位置關係,因此空芯線圈不會 被夾在供應軸1 8之外周面與導件1 6之圓錐台凹部1 5之間 。因此可以防止空芯線圈9之變形,也不會安裝已變形之 空芯線圈9 ,可以提高安裝完成率。同時,可以向散粒物 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 ___B7 五、發明説明(36 ) 供應部穩定供應空芯線圈9。 ⑤ 供應軸18之引導孔17較大且係呈圓形截面之孔’因 此空芯線圈9不會阻塞在引導孔1 7內,可以向散粒物供應 部穩定供應空芯線圈9。 ⑥ 運送軌1 3係由沒有接縫之一^根構件所構成’因此空 芯線圈9不會在引導孔1 7a之途中鉤住,可以向散粒物供應 部穩定供應空芯線圈9。 ⑦ 在散粒物供料器2 1之散粒物供應部1 2 ,在引導孔 17a內移動之前頭之空芯線圈9在進入滑動子26之承接部 40,並由滑動子26動作將後續之空芯線圈9與前頭之空芯 線圈9分開後,檔門31打開,使前頭之空芯線圏9成爲供 應態勢,因此前頭之空芯線圈9可由筒夾3 2正確確實真空 吸著保持。因此可以進行空芯線圈9之正確且確實之搭載( 安裝)。 ⑧ 藉由上述①乃至⑦,因使用本實施形態1之散粒物 供料器2 1等,可以穩定搭載空芯線圈9及其他電子零件。 (6) 可以提供,高頻特性優異、可提高輸出及效率、且 可以降低製造成本之高頻電力放大裝置(混合積體電路裝置) 及裝配該高頻電力放大裝置(混合積體電路裝置)之行動電話 機(電子裝置)。同時’由於高頻電力放大裝置之振盪邊際獲 得改善,因此行動電話機之通話性能良好。 (7) 可以提供,裝配有,安裝直流電阻很小之空芯線圈 之高頻電力放大裝置(混合積體電路裝置)及裝配該高頻電力 放大裝置(混合積體電路裝置)之行動電話機(電子裝置)。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(37 ) (8)可以提供,能夠正確且確實將空芯線圈9等之散粒 物安裝在配線基板之散粒物供料器2 1。 再者,本發明之散粒物供料器也可以供應空芯線圈以 外之跟空芯線圈同樣在移送途中前後之物品會互纏之架構 者°當然可以供應晶片電阻或晶片電容器等之晶片零件等 〇 (實施形態2) 第32圖係表示本發明其他實施形態(實施形態2)之散粒 物供料機2 1之一部分之模式圖。如該圖所示,配設連通於 管道35之空氣供應路49。此空氣供應路49係連通於供應 軸18之引導孔17。而如第32圖所示送進引導孔17內。藉 此,當引導孔17內有空芯線圈9阻塞時,可以很容易解除 其阻塞。 (實施形態3) 第45圖至第54圖係表示有關本發明之其他實施形態( 實施形態3)之高頻電力放大模組之製造之圖。 本實施形態3係關於,能夠在模阻基板上搭載線圈(空 芯線圈),而不會發生位置偏移之技術。搭載空芯線圈時, 係將空心線圈兩端之電極分別重疊在模組基板之電極固定 用焊接區上,然後,使預先塗敷在電極固定用焊接區表面 之焊錫回流,將電極部分固定在電極固定用焊接區,但發 現在固定時,如第52圖(c)所示,會發生空芯線圈9偏移位 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產苟員工消費合作社印製 -40- 575892 A7 B7 五、發明説明(38 ) (請先閲讀背面之注意事項再填寫本頁) 置之不良現象。對設在模組基板5表面之電極固定用焊接 區4b,縱使正確重疊空芯線圏9之電極23,但在其後之回 流會發生偏移,而如第52圖(c)所示,電極23會偏離電極 固定用焊接區4b。偏移量達線圈徑之1 /3以上者達7 %。此 空芯線圈9之兩端之2匝成爲電極23 ,其間之各匝成爲電 感器部2 2。 焊錫24(以小點表示之部分)之回流係使用第53圖及第 54圖所示之回流爐進行。此回流爐是,並排配置一列載置 被處理物之5個加熱抬70a〜70e之構造。 在加熱抬之一側配設有表示其一部分之移送機構之連 結臂72。此連結臂72係如第53圖之箭頭所示,可以作下 降、向右方前進、上昇、向左方後退之連續之矩形運動。 又如第54圖所示,從連結臂72之內側分別突出配置對 照各加熱抬之臂73,同時,從此等各臂73分別向下方突出 配設兩根移送爪74。 經濟部智慧財產局員工消費合作社印製 因此,因連結臂72之矩形運動,各加熱抬70a〜70e上 之被處理物,亦即模組基板5片被1次1個節距移送◦對最 初之加熱抬70a之模組基板5之供應,係由未圖示之裝載部 爲之。而在最後之加熱抬70e由上述移送爪74送出到卸載 部。 在加熱抬70a〜70e ,從最初至第3個之加熱抬70a〜 7 0c係預備加熱用之加熱抬,其溫度逐漸增高,例如從70°C 、130°C至195°C。同時,第4個之加熱抬70d係本加熱用 之加熱抬,其溫度維持在275 °C以便溶融融點238 °C之焊 -41 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(39 ) 錫24 (pdsnsb)。而最後之加熱抬70e係後加熱用之加熱抬, 其溫度爲例如1 50°C,用以使陶瓷配線板所成之模組基板5 慢慢冷卻。 因此,藉由移送爪74依次在由加熱抬構成之各區移動 之模組基板5之溫度將逐漸昇高,而在第4個本加熱用之加 熱抬70d進行焊錫回流。 惟在這種回流時,空芯線圈9之由銅線形成之電極23 將因加熱而氧化,焊錫之附著性惡化,焊錫之表面張力將 線圈彈開,而發生位置之偏移。亦即,如第5 2圖(a)所示, 將空芯線圈9之電極23重疊在模組基板5之電極固定用焊 接區4b上,接著進行回流時,便如第52圖(b)所示,對鼓 起來之焊錫,表面氧化之電極23因不容易附著焊錫,因而 被焊錫彈開,空芯線圈9將如滾下坡道般掉落,而如第52 圖(c)所示發生位置偏移。 於是,本發明人便如第45圖所示,使設在模組基板5 表面之電極固定用焊接區4b成爲3字狀之圖案,以避免圓 筒狀之空芯線圈9滾動。 本實施形態3之高頻電力放大模組與實施形態1之高頻 電力放大模組,僅固定空芯線圈9之電極23之電極固定用 焊接區4b之圖案不相同,其他部分與實施形態1相同。第 46圖表示本實施形態3之高頻電力放大模組之一部分之平 面圖。 第47圖表示本實施形態3之線圈之搭載狀態。第47圖 (a)係表示令亚字狀圖案之電極固定用焊接區4b成面對面配 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -42- ^ 訂 線 (請先閱讀背面之注意事項再填寫本頁) 575892 A7 -____ B7 五、發明説明(4〇 ) 置’在此3字狀圖案之電極固定用焊接區4b上,用焊錫24 (®上之點點部分)固定空芯線圈9兩端之電極23之模式平 面圖。第47圖(b)係側面圖,第47圖(c)係截面圖。 在此,再說明電感器之空芯線圈之搭載構造。模組基 板5之主面形成有多數配線。同時,在模組基板5具有連接 在上述配線,且以電氣方式連接在空芯線圏9之電極2 3之 電極固定用焊接區4b。電極固定用焊接區4b有兩個,因此 將其一方稱作第1電極,將另一方稱作第2電極。 從平面看上述第1電極及第2電極之各電極時,係如第 47圖(a)所示,成爲具有向第丨方向延伸之第1部分4x,從 上述第1部分4x之一端部向略爲垂直於上述第1方向之方 向延伸之第2部分4yl,及從上第1部分4x之另一端部分向 上述第2方向延伸之第3部分4y 2之圖案。在用以固定單一 空芯線圈9之一對電極固定用焊接區4b,第1及第2電極 係配置成各自之第2及第3部分相互成面對面。 電感器,亦即空芯線圏9係將其表面以絕緣膜覆蓋之 線材捲成多匝之螺旋狀之線圈形狀。線材在其兩端部有從 上述絕緣膜露出之部分,而形成電極23 。表面由絕緣膜覆 議之螺旋狀之線材部分成爲電感器部22。其兩端部分成爲 電極23。一方之電極23以焊錫材接合在第1電極,另一方 之電極2 3以焊錫材接合在第2電極。 第1電極及第2電極之第2部分4yl及第3部分4y2 ’ 係延伸到上述電感器之由絕緣膜被覆之線才部分。藉此’ 電極23可以確實以焊錫24固定在電極固定用焊接區4b。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐)_ 43 _ (請先閱讀背面之注意事項再填寫本頁) ,ιτ 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(41 ) 同時,第1電極及第2電極之第2部分4yl及第3部分 4 y 2 ’在第1方向成爲分開狀態,考慮不要使空心線圈9發 生滾動。 而第2部分4y 1及第3部分4y2則,縱使成平行或相互 有一定之角度之關係延伸之構造,仍可良好防止空芯線圈9 之滾動。同時,爲避免空芯線圈9滾動發生位置偏移’也 可以由不具第1部分4x之第2部分4yl及第3部分4y2構成 電極固定用焊接區4b。 另一方面,本發明人也檢討亚字狀之電極固定用焊接 區4b之尺寸依存性。第48圖及第49圖之曲線便是其結果 。如第47圖(a)所示,第1電極及第2電極之第2部分4yl之 長度爲A,第1電極及第2電極之間隔爲B,從第1部分4x 突出之第2部分4yl之長度爲C,第2部分4yl之第1方向 之長度爲E,第2部分4yl與第3部分4y2之間隔爲D。 第48圖之曲線係表示,D尺寸設定爲0.30mm,E尺寸 設定爲〇.15mm時之A尺寸及B尺寸與偏移不良率之相關連 。各曲線係C尺寸爲0.0 5 m m (以=表示之曲線)、0.1 0 m m (以 表示之曲線)、0.15mm(以▲表示之曲線)、0.20mm(以X 表示之曲線)時◦ 0.10mm之曲線與0.20mm之曲線相互一致 〇 從此曲線圖可以看出,縱使改變c尺寸,B尺寸在 0.40mm前後,A尺寸在0.45mm前後時不良率最低。同時也 可以看出,C尺寸在0.05mm或0.15mm時,使B尺寸爲 0.40mm前後,A尺寸爲0.45mm前後時,可以使偏移不良率 本紙張尺度適用中國國家標隼(CNS ) A4規格(210X297公釐) -44 _ (請先閲讀背面之注意事項再填寫本頁)、 1T Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -33-575892 A7 B7 V. Description of the invention (31) 〇0—, (Please read first Note on the back, please fill in this page again) The door 31 and the transport rail body 25 are also provided with vacuum suction channels 30b, 30c, 30d, and 30e. The vacuum suction passage 30d is a circular cross-section hole, and the sphere 43 rolling at the bottom of the concave portion of the transport rail body 25 can enter this hole to block the hole, that is, the vacuum suction passage 30d. As shown in Figs. 18 and 19, when the gate 3 1 moves backward to the far left end, the sphere 43 is moved to the left (backward) by the sphere control surface 44 provided on the gate 3 丨, so the sphere 43 is disengaged. The hole becomes a vacuum suction state. The thick-line arrows in the figure indicate the flow of air for vacuum suction. As shown in FIG. 20 and FIG. 21, when the gate 31 moves to the right (forward) 0.5 st, the sphere control surface 44 deviates from the hole to the right. Therefore, the vacuum attraction causes the sphere 43 to move and partly enters the hole. Inside, the vacuum suction passage 30d is blocked, and the vacuum suction operation is stopped. After the vacuum suction operation stops, the close contact force between the air-core coils 9 caused by the vacuum suction disappears. Furthermore, the empty suction passage 30e is connected to the pipe 35 of the vacuum suction mechanism. Due to the vacuum suction, the subsequent air-core coils 9 are arranged in a row in the guide holes 17. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, a description will be given of a method of supplying the air-core coils 9 in the particle supply section 12 in this manner. When the supply of the air-core coil 9 is started, as shown in FIG. 18 and FIG. 19 which is an enlarged view, the slider 26 and the gate 31 are moved to the left and then retracted. In this state, vacuum suction is performed as indicated by the thick-line arrow, and the air-core coils 9 in the guide hole 17a contact the front air-core coils 9 with the stopper portions 28 in a vertical line. In the figure (the same applies to the following figures), it means that the three air-core coils 9 from the front end will enter the receiving section 40, and as shown in FIG. 19, the paper size of the front sheet is applicable. China National Standard (CNS) A4 specification (210X297 mm) _ 34-575892 A7 B7 V. Description of the invention (32) ~ " The air-core coil 9 and the subsequent air-core wire 圏 9 are entangled and separated. (Please read the precautions on the back before filling in this page.) Secondly, as shown in Figure 20 and Figure 21, which is an enlarged view, as indicated by the arrow, proceed to the right by stopping the vacuum suction. Since the vacuum suction is stopped, the forward length is about half of the length of the air-core coil 9, that is, 0.5st. As the gate 31 advances, the sphere 43 is released from the control of the sphere control surface 44 and becomes a free state, while rolling due to the vacuum attraction, blocking the vacuum suction path 30 d. At this time, the left end of the door 31 and the end of the transport rail body 25 portion covering the guide hole 17a, that is, the interval between the open end 46 and the open end 46 is 0.5st. Become part of the state. However, the front air-core coil 9 on the receiving portion 40 is covered by the shutter 31. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Secondly, as shown in FIG. 22 and FIG. 23 of the enlarged view, the slider 26 advances to the right as shown by the arrow. The length of this advance is about half the length of the air-core coil 9, which is 0.5 st. Because the gate 31 is straddling on the slider 26, the gate 31 also advances by 0.5 st between the left end of the gate 31 and the end of the transport rail body 25 portion covering the guide hole 17a. That is, the distance from the open end 46 is 1 st. Although the slider 26 moves, since the vacuum suction has stopped, the air-core wire 前 9 at the front moves independently. The air-core coil 9 at the rear (second) of the transport component 'remains in the guide hole 17a. Thereby, the front air-core coil 9 and the rear air-core coil 9 are completely separated. In this state, the front air-core coil 9 on the receiving portion 40 is blocked by the shutter 31. Next, as shown in FIG. 24 and FIG. 25 which is an enlarged view, the gate 31 advances to the right as indicated by the arrow. This advancement is to expose the air-core coil 9 on the front part of the receiving part 40 held by the door 31. Although not particularly limited, this paper rule ^ applies the Chinese National Standard (〇 奶) 8 (4) (210 (乂 297 mm). '575892 A7 B7 V. Description of the invention (33) The distance between the left end of the gate 3 1 and the above-mentioned open end 46 is, for example, 3 st. In this state, the collet 32 is moved over, and the air-core coil 9 on the receiving portion 40 is held by vacuum suction. At this time, since the air-core coil 9 is not entangled with the other air-core wire 圏 9, it is correctly and surely held in the collet 3 2. The collet 32 is conveyed to the module substrate 5 as shown in FIGS. Π and 12 (a) to (c). Figures 26_ and 27 show air-core coils 9 having other structures mounted on the module substrate 5 using the bulk material feeder of the first embodiment. The air-core coil 9 is shown in FIG. 28 to FIG. 30. As shown in Fig. 29, a portion of a copper wire 47 whose surface is covered with an insulating film 48 made of polyethylene or the like is wound in a spiral shape with the winding portions in close contact with each other. As shown in FIG. 30, the diameter a of the copper wire 47 is, for example, 0.1 mm, and the inner diameter d of the coil is, for example, 0.3 mm. As a result, the maximum diameter D of the coil is, for example, 0.56 mm. The length α of the portion of the coiled portion of the coil that protrudes from the maximum diameter D is about 0 to 30 μm. Further, as shown in FIG. 29, the length (full length) L of the air-core coil 9 is around 0.8 mm. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This air core wire 9 forms an inductor section 22 with 3 turns, and the electrodes 23 at both ends are around 2 turns. To change the connection length of the inductor or electrode, change the number of turns. (A) and (b) of FIG. 31 show an example in which the inductor portion 22 is an air-core coil 9 having two turns and one turn. According to the first embodiment, the following effects can be obtained. (1) The DC resistance of the air-core coil is smaller than the chip inductor. Therefore, when used as an inductor of the last amplifier stage connected to a multi-stage amplifier system, the D C loss is small, which can make the loss small and the impedance high. Therefore, you can achieve -36- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 575892 A7 B7 V. Description of the invention (34) Reduce the return of high-frequency signals from the last amplification stage to its predecessor The purpose of teaching 'can increase the margin of oscillation. Therefore, the mobile phone equipped with the high-frequency power amplifying device of the first embodiment in which the oscillation margin is improved has excellent communication performance. When the coil according to the first embodiment is used, for example, the influence of the loss of the power line on the characteristics is to improve the loss by 0.1 dB, the output will increase by +0.1 dB, and the power can be increased by about + 1%. (2) Because it is a dual-frequency configuration, the power supply voltages supplied to the two amplifier systems are in a cross-connected structure. Therefore, it is possible to suppress the leakage signal from the subsequent amplifier stage (especially the last amplifier stage) to the primary amplifier stage through the power Line feedback can therefore improve the margin of oscillation. In this regard, when the air-core coil shown in (1) is used, the oscillation margin can be further improved. (3) The air-core coil 9 is a structure in which the copper wire 47 whose surface is covered with an insulating film 48 is tightly rolled into a spiral shape, so the manufacturing cost is only 1/7 to 1/2 of that of a conventional chip inductor, which is very cheap. Therefore, the cost can be reduced to about 1/7 compared with the high-cost chip inductor connected in the final amplifier stage. If the chip inductor used in other parts is replaced with the air-core coil of the present invention, the cost can be reduced to about 1/2. This can reduce the cost of high-frequency power amplification devices printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, the manufacturing cost of a mobile phone (radio communication device) equipped with the high-frequency power amplification device can also be reduced. (4) The maximum outer diameter of the air-core coil 9 is around 0.56mm, and the length is around 0.9mm. Its mounting length is shorter than the traditional width and height of 0.5mm, and the mounting length of the chip inductor is 1mm. (5) The use of a loose particle feeder 21 to load the air-core coil 9 when manufacturing a high-frequency power amplifier device can have the following effects. -37- This paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) 575892 A7 B7 V. Description of invention (35) (Please read the precautions on the back before filling this page) ① Mounted on the module substrate 5 Among the electronic components, the height of the air-core coil 9 is the highest, but it is mounted behind other electronic components. Therefore, the vacuum collet 32 holding the air-core coil 9 does not contact the electronic components already mounted on the module substrate 5 and will not damage other electronic components. As a result, the completion rate of the installation can be improved. ② Use the collet 32 to vacuum suck and hold the air-core coil 9 which is transferred to the air-particle supply unit 12 of the air-particle feeder 2 1 and line up the air-core coil 9 in front of it, and then transport it to the module substrate. 5 at a certain position, and then fix it by temporarily heating the molten solder 24 provided on the module substrate 5 or the air-core coil 9 in advance, because the subsequent supply of the air-core coil 9 and the former The air-core coil 9 is supplied separately, so that the subsequent air-core coil 9 is not overlapped with the air-core coil 9 on the front, or the vacuum suction and holding error of the collet 32 caused by the hooking is prevented, and the installation can be completed correctly and surely. Installation is also simple. As a result, installation failures or machine stops rarely occur, and installation costs can be reduced. Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ③ The funnel part is thinner due to the thickness of the cylindrical supply shaft 18, so the hollow core wire 圏 9 (particulate matter) will not straddle the upper end. The air-core coil 9 is surely supplied for stable installation. ④ In the funnel part, when the guide 16 is lowered to the bottom, there will not be any particles that can trap the loose particles between the outer peripheral surface of the supply shaft 18 and the conical recess 15 of the guide 16. Because of the positional relationship of the gap, the air-core coil will not be sandwiched between the outer peripheral surface of the supply shaft 18 and the conical recess 15 of the guide 16. Therefore, the deformation of the air-core coil 9 can be prevented, and the deformed air-core coil 9 can not be installed, and the installation completion rate can be improved. At the same time, you can apply the Chinese National Standard (CNS) A4 size (210X297 mm) to the size of the paper. 575892 A7 ___B7 V. Description of the invention (36) The supply department stably supplies air-core coils 9. ⑤ The guide hole 17 of the supply shaft 18 is relatively large and has a circular cross section. Therefore, the air-core coil 9 is not blocked in the guide hole 17 and the air-core coil 9 can be stably supplied to the loose particle supply section. ⑥ The transport rails 1 and 3 are composed of one ^ member without a seam. 'Therefore, the air-core coil 9 is not caught on the way of the guide hole 17a, and the air-core coil 9 can be stably supplied to the loose particle supply unit. ⑦ In the granular material supply part 1 2 of the granular material feeder 21, the air core coil 9 of the head enters the receiving part 40 of the slider 26 before moving in the guide hole 17a, and the slider 26 moves the follow-up After the air-core coil 9 is separated from the air-core coil 9 at the front, the door 31 is opened, so that the air-core coil 9 at the front becomes a supply state, so the air-core coil 9 at the front can be accurately and surely held by the collet 32. Therefore, the air-core coil 9 can be correctly and surely mounted (installed).上述 With the above ① and even ⑦, the use of the granular material feeder 21 of the first embodiment enables stable mounting of the air-core coil 9 and other electronic components. (6) Can provide high-frequency power amplifiers (hybrid integrated circuit devices) with excellent high-frequency characteristics, which can improve output and efficiency, and can reduce manufacturing costs, and can be equipped with such high-frequency power amplifiers (hybrid integrated circuit devices) Mobile phone (electronic device). At the same time, because the oscillation margin of the high-frequency power amplification device is improved, the communication performance of the mobile phone is good. (7) Can provide, equipped with a high-frequency power amplifier device (hybrid integrated circuit device) equipped with an air-core coil with a small DC resistance, and a mobile phone equipped with the high-frequency power amplifier device (hybrid integrated circuit device) Electronics). This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page) Order printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs 575892 A7 B7 V. Invention Description (37 (8) It is possible to provide a bulk material feeder 21 capable of accurately and surely mounting bulk materials such as the air-core coil 9 on a wiring board. In addition, the granular material feeder of the present invention can also supply structures other than the air-core coils, which are similar to the air-core coils during and after the transfer process. Of course, chip components such as chip resistors or chip capacitors can be supplied. Etc. (Embodiment 2) Fig. 32 is a schematic diagram showing a part of a bulk material feeder 21 according to another embodiment (Embodiment 2) of the present invention. As shown in the figure, an air supply path 49 connected to the duct 35 is provided. This air supply path 49 is connected to a guide hole 17 of the supply shaft 18. And it is fed into the guide hole 17 as shown in FIG. 32. Accordingly, when the air-core coil 9 is blocked in the guide hole 17, the blocking can be easily released. (Embodiment 3) FIGS. 45 to 54 are diagrams showing the manufacture of a high-frequency power amplifier module according to another embodiment (Embodiment 3) of the present invention. The third embodiment relates to a technology capable of mounting a coil (air-core coil) on a piezoresistive substrate without causing positional displacement. When the air-core coil is mounted, the electrodes at both ends of the air-core coil are superimposed on the electrode fixing pads of the module substrate, and then the solder previously coated on the surface of the electrode fixing pads is reflowed to fix the electrode part on Welding area for electrode fixing, but it is found that, as shown in Figure 52 (c), the core coil 9 will be shifted during the fixing. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) (Please Read the precautions on the back before filling this page) Order printed by the Intellectual Property of the Ministry of Economic Affairs and the Consumer Cooperatives -40- 575892 A7 B7 V. Invention Description (38) (Please read the precautions on the back before filling out this page) unpleasant sight. Regarding the electrode fixing pad 4b provided on the surface of the module substrate 5, although the electrode 23 of the hollow core wire 9 is overlapped correctly, the reflow will be offset afterwards. As shown in FIG. 52 (c), the electrode 23 deviates from the electrode fixing pad 4b. The offset amount is more than 7% of the coil diameter. Two turns of the two ends of this air-core coil 9 become the electrode 23, and each turn therebetween becomes the inductor portion 22. The reflow of the solder 24 (the portion indicated by the small dots) is performed using a reflow furnace shown in Figs. 53 and 54. This reflow furnace has a structure in which five heating lifts 70a to 70e on which objects to be processed are placed side by side are arranged side by side. On one side of the heating lifter, a connecting arm 72 is provided which indicates a part of the transfer mechanism. This connecting arm 72 is shown in the arrow of Fig. 53 and can perform a continuous rectangular movement of descending, advancing to the right, ascending, and retreating to the left. As shown in Fig. 54, arms 73 for heating and projecting are respectively projected from the inside of the connecting arm 72, and at the same time, each of the arms 73 projects downward from the arms 73 and two transfer claws 74 are provided. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As a result of the rectangular movement of the connecting arm 72, the objects to be processed on each of the 70a ~ 70e are lifted. The supply of the module substrate 5 for heating and lifting 70a is performed by a loading section (not shown). The last heating lift 70e is sent out to the unloading section by the transfer claw 74 described above. In the heating lifts 70a to 70e, from the first to the third heating lifts 70a to 70c are preheating heating lifts, the temperature of which gradually increases, for example, from 70 ° C, 130 ° C to 195 ° C. At the same time, the fourth heating lift 70d is the heating lift used for this heating, and its temperature is maintained at 275 ° C to melt the melting point 238 ° C -41-This paper size applies to China National Standard (CNS) A4 specification (210X297 (Mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 575892 A7 B7 V. Invention Description (39) Tin 24 (pdsnsb). The last heating lift 70e is a heating lift for heating after, and its temperature is, for example, 150 ° C, for slowly cooling the module substrate 5 formed of the ceramic wiring board. Therefore, the temperature of the module substrate 5 which is sequentially moved by the transfer claws 74 in each area constituted by the heating lift will gradually increase, and the solder reflow is performed at the fourth heating lift 70d for the current heating. However, during this reflow, the electrode 23 formed of the copper wire of the air-core coil 9 will be oxidized by heating, the solder adhesion will deteriorate, and the surface tension of the solder will spring the coil apart and cause the position to shift. That is, as shown in FIG. 52 (a), the electrode 23 of the air-core coil 9 is superposed on the electrode fixing pad 4b of the module substrate 5, and then reflowed, as shown in FIG. 52 (b). As shown, for the bulging solder, the surface oxidized electrode 23 is not easy to adhere to the solder, so it is ejected by the solder, and the air-core coil 9 will fall as if it rolls down the ramp, as shown in Figure 52 (c) A position shift has occurred. Then, as shown in FIG. 45, the inventor made the electrode fixing pads 4b provided on the surface of the module substrate 5 into a three-dimensional pattern to prevent the cylindrical air-core coil 9 from rolling. The high-frequency power amplifier module of the third embodiment and the high-frequency power amplifier module of the first embodiment differ only in the pattern of the electrode fixing welding region 4b for fixing the electrodes 23 of the air-core coil 9 and other parts are the same as those of the first embodiment. the same. Fig. 46 is a plan view showing a part of a high-frequency power amplifier module according to the third embodiment. Fig. 47 shows the mounted state of the coil in the third embodiment. Figure 47 (a) shows that the welding area 4b for fixing the electrodes in a sub-shaped pattern is arranged face to face. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). -42- ^ (Please read the back first Please pay attention to this page and fill in this page again) 575892 A7 -____ B7 V. Description of the invention (40) Place the soldering area 4b on the electrode fixing for this 3-character pattern and fix it with solder 24 (the dots on the ®) A schematic plan view of the electrodes 23 at both ends of the air-core coil 9. Fig. 47 (b) is a side view, and Fig. 47 (c) is a cross-sectional view. Here, the mounting structure of the air-core coil of the inductor will be described again. A plurality of wirings are formed on the main surface of the module substrate 5. At the same time, the module substrate 5 has an electrode fixing pad 4b connected to the above-mentioned wirings and electrically connected to the electrodes 23 of the air-core wires 电气 9. Since there are two electrode fixing pads 4b, one of them is called a first electrode, and the other is called a second electrode. When each electrode of the first electrode and the second electrode is viewed from a plane, as shown in FIG. 47 (a), the first electrode 4x has a first portion 4x extending in the first direction, and an end portion from one of the first portions 4x toward The pattern of the second portion 4yl extending slightly perpendicularly to the above-mentioned first direction, and the third portion 4y 2 extending from the other end portion of the upper first portion 4x to the above-mentioned second direction. In a pair of electrode fixing pads 4b for fixing a single air-core coil 9, the first and second electrodes are arranged so that the respective second and third portions face each other. The inductor, i.e., the air-core wire 9 is formed by winding a wire whose surface is covered with an insulating film into a multi-turn spiral coil shape. The wire has portions exposed from the insulating film at both ends thereof to form an electrode 23. The spiral wire portion whose surface is covered by the insulating film becomes the inductor portion 22. The two end portions become electrodes 23. One electrode 23 is bonded to the first electrode with a solder material, and the other electrode 23 is bonded to the second electrode with a solder material. The second part 4yl and the third part 4y2 'of the first electrode and the second electrode extend to the part of the inductor covered by the insulating film. With this, the electrode 23 can be reliably fixed to the electrode fixing pad 4b with the solder 24. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 43 _ (Please read the precautions on the back before filling out this page), ιτο printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 575892 A7 B7 Explanation of the invention (41) At the same time, the second part 4yl and the third part 4 y 2 ′ of the first electrode and the second electrode are separated in the first direction, and it is considered not to cause the hollow coil 9 to roll. However, the second part 4y 1 and the third part 4y2 can prevent the rolling of the air-core coil 9 well even if the structures extend parallel or at a certain angle. At the same time, in order to prevent the positional displacement of the air-core coil 9 from rolling, the second portion 4yl and the third portion 4y2 without the first portion 4x may be constituted by the electrode fixing pad 4b. On the other hand, the inventors also examined the size dependence of the sub-shaped electrode fixing pad 4b. The curves in Figures 48 and 49 are the results. As shown in FIG. 47 (a), the length of the second part 4yl of the first electrode and the second electrode is A, and the interval between the first electrode and the second electrode is B, and the second part 4yl protruding from the first part 4x The length is C, the length in the first direction of the second part 4yl is E, and the interval between the second part 4yl and the third part 4y2 is D. The graph in Fig. 48 shows the correlation between the A dimension and the B dimension and the deviation failure rate when the D dimension is set to 0.30 mm and the E dimension is set to 0.15 mm. Each curve is when the C dimension is 0.0 5 mm (curve indicated by =), 0.1 0 mm (curve indicated by), 0.15mm (curve indicated by ▲), 0.20mm (curve indicated by X) ◦ 0.10mm The curve and the 0.20mm curve are consistent with each other. From this graph, it can be seen that even if the c dimension is changed, the B dimension is around 0.40mm and the A dimension is around 0.45mm. At the same time, it can be seen that when the C size is 0.05mm or 0.15mm, the B size is around 0.40mm and the A size is around 0.45mm. Specifications (210X297mm) -44 _ (Please read the precautions on the back before filling this page)

、1T 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(42 ) 爲0%。 (請先閱讀背面之注意事項再填寫本頁) 第49圖之曲線圖係將D尺寸設定爲0.20mm,E尺寸設 定爲0.20mm時之與上述相同之曲線圖。 第50圖係測量將塗敷在模組基板上之成面對面之第1 電極及第2電極(亚字狀電極)之焊錫再溶融之狀態,且使其 成三維顯示圖者。而第51圖係第50圖之ΙΙΙΟμιη位置(P)之 截面圖。可以很淸楚看出,焊錫24之表面變化追隨空芯線 圈9之電極23之外徑。 由於如此,線圈之中心位於雙子山狀之焊錫24間,因 此,縱使電極23因焊錫之表面張力被彈開時,被位於電極 23兩側之山狀之焊錫所阻檔,因而空芯線圈9不會滾動, 可以防止空芯線圈9之搭載位置偏移。本實施形態3之空芯 線圏9之搭載不良率可以抑制在1 %以下。 本實施形態3係使用第53圖及第54圖所示之回流爐, 將空芯線圈9搭載於模組基板5。再者,在回流爐,空芯線 圈9省略未圖示。 經濟部智慧財產局員工消費合作社印製 在回流爐,模組基板5係由移送機構以間歇方式移送 到加熱抬70a〜70e上,藉此預備加熱及本加熱進行空芯線 圈9之回流搭載。例如,移送時間爲3秒,在各加熱抬上之 模組基板5之停留期間爲50秒。從第1區至第3區,加熱 溫度逐漸上昇,在第4區則藉由本加熱進行焊錫24之再溶 融。而在第5區則使溫度慢慢下降,可以防止由陶瓷配線 板構成之模組基板5之破壞損傷。 藉此,如第46圖及第47圖(a)所示,完成電極23不會 -45- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 B7 五、發明説明(43 ) 從電極固定用焊接區4b脫落之良好之空芯線圈9之搭載。 (實施形態4) 第55圖至第58圖係表示有關本發明之其他實施形態( 實施形態4)之高頻電力放大模組之製造之圖。第55圖係表 示回流爐之槪要之模式正面圖。第56圖係表示在上述回流 爐於氮氣環境下進行回流之狀態之模式正面圖。第5 7圖係 表示在上述氮氣環境下進行回流之狀態之模式截面圖。 本實施形態4之搭載空芯線圈9之電極23之電極固定 用焊接區4b係如第58圖所示,不是亚字狀而是矩形狀。惟 ,爲了使空芯線圈9之電極23表面不會因加熱而氧化,在 惰性氣體環境中進行回流,惰性氣體使用氮氣(N〇。 因此,回流爐係如第55圖所示,爲了能夠在移送模組 基板5以外之回流時,將模組基板5置於惰性氣體環境中, 而備有可以從上面覆蓋模組基板5之箱型之惰性氣體供應 箱75。此惰性氣體供應箱75準備有對應各區之多數個,同 時,以昇降臂76支持之。而此昇降臂76之中間成空洞,可 以從各惰性氣體供應箱75之天板部分噴射氮氣。再者,爲 了提高機械強度,也可以在昇降臂76之外,另外準備供應 氮氣用之管道。 昇降臂76在以移送爪74移送模組基板5時位於上方以 免相互干擾,移送爪74位於左端成靜止狀時,則如第56圖 及第57圖所示下降。而將從昇降臂76之空心部分噴出之氮 氣吹在模組基板5之主面。載置於模組基板5之主面之空芯 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -46 - (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 575892 A7 _ B7_ 五、發明説明(44 ) 線圈9之兩端之電極23 ,係以塗敷在模組基板5之電極固 (請先閱讀背面之注意事項再填寫本頁) 定用焊接區4b表面之焊錫24,在氮氣環境下加以固定。例 如,模組基板5之移送時間爲3秒,在氮氣環境下之加熱時 間爲50秒。 其結果,空芯線圈9之由銅製成之電極23之表面便不 容易被氧化。因之,電極2 3不會被溶化之焊錫彈開,因而 不會發生位移,空芯線圈9可以確實固定在電極固定用焊 接區4b。第58圖表示,空芯線圈9之電極23被焊錫24固 定在電極固定用焊接區4b之狀態。雖不特別限定,但空芯 線圈9有10匝,其中之6匝爲電感器部22,兩端之2匝爲 電極2 3。 再者,惰性氣體供應箱75之下緣可以是直接接觸到加 熱抬上面之構造,也可以是直接接觸到模組基板5之主面 之構造,但其一部分需要有令氮氣漏到外部之一定之空隙 77(參照第57圖)。 本實施形態4之空芯線圈9之因搭載造成之不良率可以 抑制在1 %以下。 經濟部智慧財產局員工消費合作社印製 以上,依據實施形態具體說明本發明人所完成之發明 ,但本發明不受上述實施形態之限定,當然可以在不脫離 其主旨之範圍內作各種變更。 同時,上述實施形態係將本發明應用在3級架構之高 頻電力放大裝置,但也可以同樣應用在其他架構之高頻電 力放大裝置。舉例言之,由初級半導體放大元件及最後級 半導體放大元件所構成之兩級架構之高頻電力放大模組之 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -47- 575892 A7 ___ B7_ 五、發明説明(45 ) 例子也可以應用,而收到同樣之效果。 以上之說明主要是說明將本發明人完成之發明應用在 成爲其背景之利用領域之行動電話機之情形,但不限定如 此’也可以應用在其他電子裝置或其他半導體裝置(混合積 體電路裝置)。 如以上所述,本發明之高頻電力放大裝置,可以當作 行動通信終端機等之行動電話機及各種無線電通信裝置之 電力放大器使用。同時,可以提供能夠達成穩定之通話之 無線電通信裝置。並且,因爲高頻電力放大模組或無線電 4 通信裝置之製成率之提高,而得降低高頻電力放大裝置或 無線電通信裝置之製造成本。 圖式之簡單說明 第1圖係表示本發明一實施形態(實施形態1)之高頻電 力放大裝置之搭載於模組基板之電子零件之布置之平面圖 〇 第2圖係表示本實施形態丨之高頻電力放大裝置之外觀 之斜視圖。 第3圖係表示搭載於上述模組基板之線圈之模式圖。 第4圖係表示本實施形態丨之高頻電力放大裝置之電路 架構之方塊圖。 第5圖係形成於本實施形態1之高頻電力放大裝置之模 組基板之電源線之等效電路圖。 第6圖係表示帶狀線之損失之曲線圖。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐)_ 48 - (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T 575892 A7 B7 5. The invention description (42) is 0%. (Please read the precautions on the back before filling this page.) The graph in Figure 49 is the same as the above when the D dimension is set to 0.20mm and the E dimension is set to 0.20mm. Figure 50 shows the state where the first and second electrodes (sub-shaped electrodes) coated on the module substrate are re-melted, and the three-dimensional display is made. Fig. 51 is a cross-sectional view at the position 11 (10) of Fig. 50. It can be clearly seen that the surface change of the solder 24 follows the outer diameter of the electrode 23 of the air-core coil 9. Because of this, the center of the coil is located between the twin mountain-shaped solders 24. Therefore, even if the electrode 23 is ejected due to the surface tension of the solder, it is blocked by the mountain-shaped solders located on both sides of the electrode 23, so the air-core coil 9 does not roll, which prevents the mounting position of the air-core coil 9 from shifting. The mounting failure rate of the hollow core wire 9 in the third embodiment can be suppressed to 1% or less. The third embodiment uses the reflow furnace shown in FIGS. 53 and 54 to mount the air-core coil 9 on the module substrate 5. In the reflow furnace, the air-core coil 9 is omitted (not shown). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In the reflow furnace, the module substrate 5 is intermittently transferred by the transfer mechanism to the heating lifts 70a to 70e, so as to carry out the preheating and the heating for reflow loading of the air-core coil 9. For example, the transfer time is 3 seconds, and the dwell period of the module substrate 5 lifted by each heating is 50 seconds. From zone 1 to zone 3, the heating temperature gradually increases, and in zone 4 the remelting of the solder 24 is performed by this heating. In the fifth zone, the temperature is gradually decreased to prevent damage to the module substrate 5 made of a ceramic wiring board. Therefore, as shown in Fig. 46 and Fig. 47 (a), the finished electrode 23 will not be -45- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 575892 A7 B7 V. Description of the invention ( 43) Mounting of a good air-core coil 9 that has fallen off from the electrode fixing pad 4b. (Embodiment 4) Figures 55 to 58 are diagrams showing the manufacture of a high-frequency power amplifier module according to another embodiment (Embodiment 4) of the present invention. Fig. 55 is a front view showing the essential mode of the reflow furnace. Fig. 56 is a schematic front view showing a state in which the reflow furnace is reflowed in a nitrogen atmosphere. Fig. 57 is a schematic cross-sectional view showing a state where the reflow is performed under the nitrogen atmosphere. As shown in Fig. 58, the pad 4b for electrode fixing of the electrode 23 on which the air-core coil 9 is mounted according to the fourth embodiment is not rectangular but rectangular. However, in order to prevent the surface of the electrode 23 of the air-core coil 9 from being oxidized by heating, reflow is performed in an inert gas environment, and the inert gas is nitrogen (N0.) Therefore, the reflow furnace system is shown in FIG. 55. When transferring a reflow other than the module substrate 5, the module substrate 5 is placed in an inert gas environment, and a box-type inert gas supply box 75 that can cover the module substrate 5 from above is prepared. This inert gas supply box 75 is prepared There are many corresponding to each zone, and at the same time, it is supported by a lifting arm 76. A hollow is formed in the middle of the lifting arm 76, and nitrogen can be sprayed from the top plate portion of each inert gas supply box 75. Furthermore, in order to improve the mechanical strength, It is also possible to prepare a pipeline for supplying nitrogen in addition to the lifting arm 76. The lifting arm 76 is located above to avoid mutual interference when the module substrate 5 is transferred by the transfer claw 74, and the transfer claw 74 is at the left end in a stationary state, as in the first section. As shown in Fig. 56 and Fig. 57, the nitrogen gas sprayed from the hollow portion of the lifting arm 76 is blown onto the main surface of the module substrate 5. The paper size of the hollow core placed on the main surface of the module substrate 5 is applicable. National Standard (CNS) A4 Specification (210X297 mm) -46-(Please read the precautions on the back before filling out this page) Order Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 575892 A7 _ B7_ V. Description of Invention (44) The electrodes 23 at both ends of the coil 9 are fixed with electrodes coated on the module substrate 5 (please read the precautions on the back before filling this page). Use the solder 24 on the surface of the soldering zone 4b and fix it in a nitrogen atmosphere. For example, the transfer time of the module substrate 5 is 3 seconds, and the heating time in a nitrogen environment is 50 seconds. As a result, the surface of the electrode 23 made of copper of the air-core coil 9 is not easily oxidized. Therefore, The electrodes 23 are not popped up by the melted solder, so there is no displacement. The air-core coil 9 can be fixed in the electrode fixing welding area 4b. Fig. 58 shows that the electrode 23 of the air-core coil 9 is fixed by the solder 24 The state of the electrode fixing pad 4b. Although not particularly limited, the air-core coil 9 has 10 turns, of which 6 turns are the inductor portion 22, and 2 turns at both ends are the electrodes 23. Moreover, the inert gas supply box The lower edge of 75 can be directly contacted The structure for heating the upper surface may also be a structure that directly contacts the main surface of the module substrate 5, but a part of it needs a certain gap 77 (refer to FIG. 57) for nitrogen to leak to the outside. The defective rate due to the installation of the core coil 9 can be suppressed to less than 1%. The above is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the invention completed by the present inventors will be specifically described according to the embodiment. Of course, various modifications can be made without departing from the scope of the invention. At the same time, the above embodiment applies the present invention to a three-level architecture high-frequency power amplification device, but it can also be applied to other architectures of high-frequency power. Magnification device. For example, the paper size of the two-level high-frequency power amplifier module composed of a primary semiconductor amplification element and a final semiconductor amplification element is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -47- 575892 A7 ___ B7_ 5. Explanation of the Invention (45) The example can also be applied and received the same effect. The above description mainly describes the application of the invention completed by the present inventor to a mobile phone that has become a field of use for its background, but it is not limited to this. It can also be applied to other electronic devices or other semiconductor devices (hybrid integrated circuit device) . As described above, the high-frequency power amplifying device of the present invention can be used as a mobile phone such as a mobile communication terminal and a power amplifier for various radio communication devices. At the same time, it is possible to provide a radio communication device capable of achieving stable conversation. In addition, because the production rate of the high-frequency power amplifier module or the radio 4 communication device is increased, the manufacturing cost of the high-frequency power amplifier device or the radio communication device can be reduced. Brief description of the drawings The first diagram is a plan view showing the arrangement of electronic components mounted on a module substrate of a high-frequency power amplifier device according to an embodiment (Embodiment 1) of the present invention. The second diagram is a diagram showing the embodiment 丨An oblique view of the appearance of a high-frequency power amplification device. Fig. 3 is a schematic diagram showing a coil mounted on the module substrate. FIG. 4 is a block diagram showing a circuit structure of the high-frequency power amplifying device of this embodiment. Fig. 5 is an equivalent circuit diagram of a power supply line formed on a module substrate of the high-frequency power amplifier device of the first embodiment. Fig. 6 is a graph showing the loss of a strip line. This paper size applies Chinese National Standard (CNS) A4 specification (210X 297mm) _ 48-(Please read the precautions on the back before filling this page)

經濟部智慧財產局員工消費合作社印製 575892 A7 _ B7 五、發明説明(46 ) 第7圖係表示晶片電感器之損失之曲線圖。 第8圖係表示線圏之損失之曲線圖。 第9圖係表示線圈與晶片線圈之DC電阻與電感之相關 關係之曲線圖。 第1 0圖係表示裝配本實施形態丨之高頻電力放大裝置 之行動電話機之部分架構之方塊圖。 第1 1圖係表示製造本實施形態1之高頻電力放大裝置 時,使用本發明之散粒物供料器(bulk feeder)或筒夾(collet) 等在模>^基^安裝線圈之狀態之模式圖。 上述線圈之安裝狀態之模式圖。 第1 3圖係表示上述散粒物供料器之漏斗部分之模式截 面圖。 第14圖係上述漏斗之平面圖。 第1 5圖係表示連在上述漏斗用以運送線圈之線圈運送 軌之模式正面圖。 第1 6圖係表示上述漏斗之線圈之檢測部分之截面圖。 第1 7圖係表示第16圖之一部分之放大截面圖。 第1 8圖係上述線圈運送軌前端之散粒物供應部之真空 吸引狀態之放大截面圖。 第19圖係表示第18圖之一部分之進一步放大之放大截 面圖。 第20圖係令上述散粒物供應部之真空吸引停止之狀態 下之放大截面圖。 第21圖係表示第20圖之一部分之進一步放大之放大截 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) .49- (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 575892 A7 _ B7 V. Description of the Invention (46) Figure 7 is a graph showing the loss of the chip inductor. Fig. 8 is a graph showing the loss of the line. Fig. 9 is a graph showing the correlation between the DC resistance and inductance of a coil and a wafer coil. Fig. 10 is a block diagram showing a partial structure of a mobile phone equipped with the high-frequency power amplifying device of this embodiment. FIG. 11 is a diagram showing the use of a bulk feeder or collet of the present invention when manufacturing a high-frequency power amplifier device according to the first embodiment in a coil > State diagram. Schematic diagram of the mounting state of the above coil. Fig. 13 is a schematic sectional view showing a funnel portion of the above-mentioned granular material feeder. Fig. 14 is a plan view of the funnel. Fig. 15 is a front view showing a pattern of a coil conveyance rail connected to the funnel for conveying a coil. FIG. 16 is a cross-sectional view showing a detection portion of the coil of the funnel. FIG. 17 is an enlarged sectional view showing a part of FIG. 16. Fig. 18 is an enlarged cross-sectional view of the vacuum suction state of the loose particle supply section at the front end of the coil transport rail. Fig. 19 is an enlarged cross-sectional view showing a further enlarged part of Fig. 18; Fig. 20 is an enlarged sectional view in a state where the vacuum suction of the above-mentioned granular material supply unit is stopped. Figure 21 is an enlarged section showing a further enlargement of a part of Figure 20. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). 49- (Please read the precautions on the back before filling this page)

、1T 經濟部智慧財產局員工消費合作社印製 575892 A7 B7 五、發明説明(47 ) 面圖。 (請先閲讀背面之注意事項再填寫本頁) 第2 2圖係將上述散粒物供應部前頭之線圈從其他線圈 拉開之狀態之放大截面圖。 第23圖係表示第22圖之一部分之進一步放大之放大截 面圖。 第24圖係以筒夾保持上述散粒物供應部前頭之線圈之 狀態之放大截面圖。 第25圖係表示第24圖之一部分之進一步放大之放大截 面圖。 第26圖係表示將其他構造之線圈搭載於模組基板之狀 態之放大模式圖。 第27圖係從側方所視之第26圖之線圈等之放大模式圖 〇 第28圖係第26圖所示線圈之放大平面擺。 第29圖係第26圖所示線圈之放大截面圖。 係第26圖所示線圈之放大側面圖。 第"表示其他構造之線圈之放大平面圖。 'Ά:/ 經濟部智慧財產局員工消費合作社印製 第32圖係k示本發明其他實施形態(實施形態2)之散粒 物供料器之一部分之模式圖。 第33圖係表示本發明人等在本發明之前先檢討之高頻 電力放大裝置之電路架構之方塊圖。 第34圖係表示傳統之散粒物供料器之模式圖。 第35圖係表示傳統之散粒物供料器之漏斗部分之模式 截面圖。 -50- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 B7 五、發明説明(48 ) 第36圖係傳統之漏斗部分之平面圖。 (請先閲讀背面之注意事項再填寫本頁) 第37圖係傳統之散粒物供料器之散粒物供應部之真空 吸引狀態之放大截面圖。 第38圖係表示第37圖之一部分之進一步放大之放大截 面圖。 第39圖係傳統之上述散粒物供應部之檔門成打開狀態 時之放大截面圖。 弟40圖係表不第39圖之一部分之進一步放大之放大截 面圖。 第4 1圖係從傳統之散粒物供料器之散粒物供應部以筒 夾保持線圈之狀態之放大截面圖。 第42圖係表示第41圖之一部分之進一步放大之放大截 面圖。 第43圖係表示在散粒物供應部不會互纏而並排之線圈 之模式I丨 示排列在散粒物供應部之前頭線圈及其後 方之線圈相互纏住之狀態之模式圖。 經濟部智慧財產局員工消費合作社印製 第45圖係表示本發明之其他實施形態(實施形態3)之高 頻電力放大模組之線圈,及固定線圈之電極之相關連之模 式斜視圖。 第46圖係表示本實施形態3之高頻電力放大模組之一 部分之..平面圖。 示本實施形態3之線圈之搭載狀態之各圖 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 B7 五、發明説明(49 ) 第4 8圖係表示對電極各部之尺寸變化之線圏之搭載偏 移之曲線圖。 (請先閱讀背面之注意事項再填寫本頁) 第49圖係表示對電極各部之尺寸變化之線圈之搭載偏 移之其他曲線圖。 第5 0圖係表示將塗抹在模組基板上之電極之焊錫再溶 融之狀態之三維顯示圖。 第51圖係將塗抹在模組基板上之電極之焊錫再溶融之 狀態之截面圖。 第1¾¾¾表示將線圈回流固定在矩形電極時之不良例 子之圖。、: 第5 3圖係表示本實施形態3使用之回流爐之槪要之模 式正面圖。 第5 4圖係表示上述回流爐之槪要之模式平面圖。 第55圖係表示本發明之其他實施形態(實施形態4)之高 頻電力放大模組之搭載線圈之回流爐之槪要之模式正面圖 〇 經濟部智慧財產局員工消費合作社印製 第5 6圖係表示在上述回流爐於氮氣環境下進行回流之 狀態之模式正面圖。 第57圖係表示在上述氮氣環境下進行回流之狀態之截 面圖。 第5 8圖係表示藉氮氣環境下之回流獲得適當搭載之線 圈之模式平面圖。 符號說明 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 575892 A7 B7 五 '發明説明(50 ) 1-……------高頻電力放大裝置 5------------模組基板 (請先閱讀背面之注意事項再填寫本頁) 9 ..........空芯線圏 10 ------------散粒物收容箱冈) 11 ------------漏斗 12 ------------散粒物供應部 13 .................運送軌 16..........…導件 18--..........供應軸 21---......___散粒物供料器) 22 ............電感器部 23 ------------電極 25------------運送軌本體 26------------滑動子 28...........-停止部 30a、30b、30c、30d、30e............真空吸引通路 31 .........---檔門 經濟部智慧財產局員工消費合作社印製 32 .................筒夾 34.................平抬 35——……--管道 36------------發光元件 38............受光元件 42......-……彈簧Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T 575892 A7 B7 V. Description of the invention (47). (Please read the precautions on the back before filling in this page) Figure 2 2 is an enlarged cross-sectional view of the state where the coil in front of the aforesaid loose particle supply section is pulled away from other coils. Fig. 23 is an enlarged sectional view showing a further enlarged part of Fig. 22; Fig. 24 is an enlarged sectional view showing a state in which a coil in front of the above-mentioned granular material supply unit is held by a collet. Fig. 25 is an enlarged sectional view showing a further enlarged part of Fig. 24. Fig. 26 is an enlarged schematic diagram showing a state where coils of other structures are mounted on a module substrate. Figure 27 is an enlarged schematic view of the coils and the like of Figure 26 viewed from the side. Figure 28 is an enlarged plane pendulum of the coils shown in Figure 26. Fig. 29 is an enlarged sectional view of the coil shown in Fig. 26. This is an enlarged side view of the coil shown in FIG. No. " indicates an enlarged plan view of coils of other configurations. 'Ά: / Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs FIG. 32 is a schematic diagram showing a part of a granular material feeder in another embodiment (Embodiment 2) of the present invention. Fig. 33 is a block diagram showing the circuit structure of the high-frequency power amplifier device that the present inventors reviewed before the present invention. Fig. 34 is a schematic diagram showing a conventional bulk feeder. Fig. 35 is a schematic sectional view showing a funnel portion of a conventional bulk feeder. -50- This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297mm) 575892 A7 B7 V. Description of Invention (48) Figure 36 is a plan view of the traditional funnel part. (Please read the precautions on the back before filling out this page.) Figure 37 is an enlarged cross-sectional view of the vacuum suction state of the bulk supply unit of a conventional bulk feeder. Fig. 38 is an enlarged sectional view showing a further enlarged part of Fig. 37; Fig. 39 is an enlarged cross-sectional view of a conventional door of the granular material supply unit when the shutter is opened. Figure 40 is an enlarged cross-sectional view showing a further enlarged part of Figure 39. Fig. 41 is an enlarged cross-sectional view of a state in which a coil is held by a collet from a granule supply section of a conventional granule feeder. Fig. 42 is an enlarged sectional view showing a further enlarged part of Fig. 41; Fig. 43 is a pattern diagram showing coils side by side in which the granular material supply unit does not become entangled with each other. Fig. 43 is a schematic diagram showing a state in which the first coil and the coils behind it are entangled with each other. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 45 is a perspective view showing a related pattern of a coil of a high-frequency power amplifier module and a fixed coil electrode of another embodiment (Embodiment 3) of the present invention. Fig. 46 is a plan view showing a part of the high-frequency power amplifier module according to the third embodiment. Each drawing showing the mounting state of the coil in this embodiment 3 The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 575892 A7 B7 V. Description of the invention (49) Figures 4 and 8 show the parts of the counter electrode. A graph showing the displacement of the line of dimensional change. (Please read the precautions on the back before filling out this page.) Figure 49 is another graph showing the offset of the mounting of the coil with respect to the size change of each part of the electrode. Fig. 50 is a three-dimensional display diagram showing a state in which the solder of the electrode applied on the module substrate is re-melted. Fig. 51 is a cross-sectional view of a state where the solder applied to the electrodes on the module substrate is re-melted. Fig. 1¾¾¾ shows a defect example when the coil is reflow-fixed to a rectangular electrode. Fig. 53 is a front view showing the essential mode of the reflow furnace used in the third embodiment. Fig. 54 is a plan view showing the essentials of the above-mentioned reflow furnace. Fig. 55 is a front view showing the main mode of a reflow furnace equipped with a coil of a high-frequency power amplifier module according to another embodiment (Embodiment 4) of the present invention. Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. The figure is a schematic front view showing a state in which the reflow furnace is reflowed under a nitrogen atmosphere. Fig. 57 is a cross-sectional view showing a state where reflux is performed under the above-mentioned nitrogen environment. Fig. 58 is a plan view showing a pattern for obtaining a properly mounted coil by reflow under a nitrogen environment. Explanation of symbols This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 575892 A7 B7 Five 'invention description (50) 1 -......------ high frequency power amplifier device 5 ----- ------- Module substrate (please read the precautions on the back before filling this page) 9 .......... air core 圏 10 ------------ Loose matter storage box) 11 ------------ Funnel 12 ------------ Loose matter supply department 13 .......... ....... Conveying rails 16 .......... Guide 18 --............ Supply shaft 21 ---......___ Particle feeder) 22 ............ Inductor section 23 ------------ Electrode 25 ------------ Transport rail body 26 ------------ Slider 28 ..............- Stop parts 30a, 30b, 30c, 30d, 30e ... .... Vacuum suction path 31 .........--- Printed by Staff Consumer Cooperative of Intellectual Property Bureau of Ministry of Economic Affairs 32 ....... Collet 34 ....... Flat lift 35 ----- --- Pipe 36 ------------ Light-emitting element 38 ... ........ Light-receiving element 42 ......-... Spring

50------------高頻信號處理1C 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -53- 575892 A7 B7 五、發明説明(51 ) 經濟部智慧財產局員工消費合作社印製 51… …天 線 52… 一天 線 送受信切換: 53… --APC 電路 54a 、54b-. -…藕合器 55--· 一雙 工 器 56… 一發 送 接收切換開丨 57、 60…- -濾波器 58a 、58b- --…電力放大 61--· 一低 雜 訊放大器 70、 70a〜 70e .........加熱 72--· 一連 結 臂 73 — --臂 74-- --移 送 爪 75… --惰 性 氣體供應箱 76-- --昇 降 臂 (請先閲讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-54 -50 ------------ High-frequency signal processing 1C This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) -53- 575892 A7 B7 V. Description of the invention (51) Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperative 51 ...… Antenna 52… One antenna sends and receives switches: 53… --APC circuit 54a, 54b-. -... Coupler 55-- · A duplexer 56 ... One send and receive switch on丨 57, 60 ...--Filters 58a, 58b ---... Power amplification 61-- · A low noise amplifier 70, 70a ~ 70e ......... Heating 72-- · A connecting arm 73 —-Arm 74--Transfer claw 75…-Inert gas supply box 76--Lifting arm (please read the precautions on the back before filling this page) The paper size of the book applies to the Chinese National Standard (CNS) A4 size (210X297 mm) -54-

Claims (1)

575892575892 六、申請專利範圍 第90 1 06793號專利申請案 中文申請專利範圍修正本 (請先閱讀背面之注意事項再填寫本頁) 民國92年2月13日修正 1 . 一種高頻電力放大裝置,其特徵在於:具備有: 輸入端子; 輸出端子; 電源電壓端子;以及, 成縱列連接在上述輸入端子及上述輸出端子之間,同 時,由上述電源電壓端子供應電源電壓之多數放大級,- 以電氣方式連接在上述放大級之電感器中之1乃至全 部,係由將表面由絕緣膜被覆之線材捲成螺旋狀,兩端作 爲電極之線圈,所構成, 上述電感器連接在,其主面有多數配線,及以電氣方 式連接在上述多數配線之第1電極及第2電極之模組基板. 經濟部智慧財產局員工消費合作社印製 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 上述第1及第2電極係配置成各自之第2及第3部分 互成面對面, 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部, 上述電感器係藉由焊錫接合在上述第1電極及第2電 本纸張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) 575892 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 2 .如申請專利範圍第1項之高頻電力放大裝置,其 中,上述線圈具有,將直徑0 · 1 m m左右之銅線緊密捲 成內徑0 . 3 m m左右之螺旋狀,兩端則以不存在有上述 絕緣膜之1乃至數匝之銅線部分作爲電極之架構。 3 . —種高頻電力放大裝置,其特徵在於:具備有: 輸入端子; 輸出端子; 電源電壓端子;以及, 成縱列連接在上述輸入端子及上述輸出端子之間,同 時,由上述電源電壓端子供應電源電壓之多數放大級, 在最後放大級與上述電源電壓端子間,成串聯連接電. 感器, 上述電感器係由,表面由絕緣膜被覆之線材捲成螺旋 狀,兩端作爲電極之線圈構成, 上述電感器連接在,其主面有多數配線,及以電氣方 式連接在上述多數配線之第1電極及第2電極之模組基板 , 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 本紙張尺度適用中國國家標準(CNS ) A4規格「210X 297公楚] 「2二 C請先閱讀背面之注意事項存填寫本育)6. Application for Patent Scope No. 90 1 06793 Chinese Patent Application Amendment (please read the notes on the back before filling this page) Amendment on February 13, 1992 1. A high-frequency power amplifier device, which It is characterized by having: an input terminal; an output terminal; a power supply voltage terminal; and a plurality of amplification stages connected in a row between the input terminal and the output terminal, and most of the power supply voltage is supplied by the power supply voltage terminal, One or all of the inductors electrically connected to the above-mentioned amplifier stage are formed by winding a surface of a wire covered with an insulating film into a spiral shape, and two ends are used as electrodes. The inductor is connected to the main surface of the inductor. There are many wirings and module substrates that are electrically connected to the first and second electrodes of most of the wirings. The first and second electrodes printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs have the above-mentioned first and second electrodes viewed from a plane, respectively. The first part extending in the first direction, and the second part extending slightly perpendicular to the first direction from one end of the first part. And the third part extending from the other end of the first part to the second direction, the first and second electrodes are arranged so that the respective second and third parts face each other, and the inductor is arranged The part exposed from the insulating film is located above the first electrode and the second electrode, and the inductor is bonded to the first electrode and the second electrode by soldering. The paper standard of China applies (CNS) A4. Specifications (210 X 297 mm) 575892 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The scope of patent application, the second and third parts of the first and second electrodes respectively extend to the above inductors The portion of the wire covered by the insulating film. 2. The high-frequency power amplifying device according to item 1 of the patent application range, wherein the coil has a copper wire with a diameter of about 0.1 mm tightly wound into a spiral shape with an inner diameter of about 0.3 mm. There is no structure in which the copper wire portion of 1 to several turns of the above-mentioned insulating film is used as an electrode. 3. A high-frequency power amplifying device, comprising: an input terminal; an output terminal; a power supply voltage terminal; and a column connected between the input terminal and the output terminal; Most of the amplifier stages that supply power to the terminals are connected in series between the final amplifier stage and the power supply voltage terminals described above. The inductor is formed by winding the surface of the wire covered with an insulating film into a spiral shape, and the two ends serve as electrodes. The coil structure is such that the inductor is connected to the main surface with a plurality of wirings, and a module substrate electrically connected to the first and second electrodes of the plurality of wirings, and the first and second electrodes are viewed from a plane. , Each having a first portion extending in the first direction, a second portion extending from one end of the first portion to a direction slightly perpendicular to the first direction, and a second portion extending from the other end of the first portion to the second Part 3 extending in the direction, this paper size is applicable to China National Standard (CNS) A4 specification "210X 297 Gongchu" "2 2C Please read the notes on the back first Fill in this fertile) 575892 A8 B8 C8 D8 六、申請專利範圍 上述第1及第2電極係配置成各自之第2及第3部分 互成面對面, (請先閱讀背面之注意事項再填寫本頁) 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部, 上述電感器係藉由焊錫接合在上述第1電極及第2電 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 4 . 一種高頻電力放大裝置,其特徵在於:具備有多 數放大系統, 各放大系統係成縱列連接多數放大級之多級架構, 在各放大系統之最後放大級與電源電壓端子之間,成 串聯連接電感器, 上述電感器係由,表面由絕緣膜被覆之線材捲成螺旋. 狀,兩端作爲電極之線圈構成, 上述電感器連接在,其主面有多數配線,及以電氣方 式連接在上述多數配線之第1電極及第2電極之模組基板 ? 經濟部智慧財產局員工消費合作社印製 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 上述第1及第2電極係配置成各自之第2及第3部分 互成面對面, 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 3 _ 575892 A8 B8 C8 _ P8_ 六、申請專利範圍 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部, (請先閱讀背面之注意事項再填寫本頁) 上述電感器係藉由焊錫接合在上述第1電極及第2電 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 5 _ —種高頻電力放大裝置,其特徵在於:具備有: 兩個放大系統; 上述各放大系統之輸入端子; 上述各放大系統之輸出端子;以及, 兩個電源電壓端子, 上述各放大系統係成縱列連接多數放大級之多級架構 , 上述一方之電源電壓端子分別連接在上述一方之放大. 系統之初級放大級,及上述另一方之放大系統之其餘放大 級, 經濟部智慧財產局員工消費合作社印製 上述另一方之電源電壓端子分別連接在上述另一方之 放大系統之初級放大級,及上述一方之放大系統之其餘放 大級, 在上述各放大系統之最後放大級與電源電壓端子之間 ,成串聯連接電感器, 上述電感器係由,表面由絕緣膜被覆之線材捲成螺旋 狀,兩端作爲電極之線圈構成, 上述電感器連接在,其主面有多數配線,及以電氣方 本紙張尺度適用中國國家標準(CNS ) A4 ( 2—Η) X 297:31 : 一 575892 A8 B8 C8 D8 六、申請專利範圍 式連接在上述多數配線之第1電極及第2電極之模組基板 (請先閲讀背面之注意事項再填寫本頁) 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 上述第1及第2電極係配置成各自之第2及第3部分 互成面對面, 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部, 上述電感窃係賴由焊錫接合在上述第1電極及第2電 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 6 · —種無線電通信裝置,在其發送部有高頻電力放 大裝置’可將上述局頻電力放大裝置之輸出向天線輸出, 其特徵在於: 經濟部智慧財產局員工消費合作社印製 上述高頻電力放大裝置具備有: 輸入端子; 輸出端子; 電源電壓端子;以及, 成縱列連接在上述輸入端子及上述輸出端子之間,同 時,由上述電源電壓端子供應電源電壓之多數放大級, 以電氣方式連接在上述放大級之電感器中之1乃至全 ^紙張ϋ適用中國國家標準(CNS ) A4規格(210 X 297^) Γ5~: ~ 575892 A8 B8 C8 D8 六、申請專利範圍 部,係由將表面由絕緣膜被覆之線材捲成螺旋狀,兩端作 爲電極之線圈,所構成, (請先閱讀背面之注意事項再填寫本頁) 上述電感器連接在,其主面有多數配線,及以電氣方 式連接在上述多數配線之第1電極及第2電極之模組基板 , 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 上述第1及第2電極係配置成各自之第2及第3部分 互成面對面, 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部, 上述電感器係藉由焊錫接合在上述第1電極及第2電. 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 經濟部智慧財產局員工消費合作社印製 7 . —種無線電通信裝置,在其發送部有高頻電力放 大裝置,可將上述高頻電力放大裝置之輸出向天線輸出, 其特徵在於: 上述高頻電力放大裝置具備有: 輸入端子; 輸出端子; 電源電壓端子;以及, ϋ張尺度適用中國國家標ϋ CNS ) A4規^Γ( 2T〇X 297公^ 575892 A8 B8 C8 D8 六、申請專利範圍 成縱列連接在上述輸入端子及上述輸出端子之間,同 時,由上述電源電壓端子供應電源電壓之多數放大級, 在最後放大級與上述電源電壓端子間,成串聯連接電 感器, 上述電感器係由,表面由絕緣膜被覆之線材捲成螺旋 狀,兩端作爲電極之線圈構成, 上述電感器連接在,其主面有多數配線,及以電氣方 式連接在上述多數配線之第1電極及第2電極之模組基板 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 上述第1及第2電極係配置成各自之第2及第3部分. 互成面對面, 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部’ 上述電感器係藉由焊錫接合在上述第1電極及第2電 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 8 . —種無線電通信裝置,在其發送部有高頻電力放 大裝置,可將上述高頻電力放大裝置之輸出向天線輸出, 其特徵在於: (請先閱讀背面之注意事項再填寫本頁) 、1T 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -/ - 575892 A8 B8 C8 D8 χ、申請專利範圍 上述商頻電力放大裝置具備有多數放大系統, 各放大系統係成縱列連接多數放大級之多及架構, 在各放大系統之最終放大級與電源電壓端子之間,成 串聯連接電感器, 上述電感器係由,表面由絕緣膜被覆之線材捲成螺旋 狀,兩端作爲電極之線圈構成, 上述電感器連接在,其主面有多數配線,及以電氣方 式連接在上述多數配線之第1電極及第2電極之模組基板 5 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 上述第1及第2電極係配置成各自之第2及第3部分. 互成面對面, 、 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部, 上述電感器係藉由焊錫接合在上述第1電極及第2電 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 9 . 一種無線電通信裝置,在其發送部有高頻電力放 大裝置,可將上述高頻電力放大裝置之輸出向天線輸出, 其特徵在於: (請先閱讀背面之注意事項再填寫本頁) 、π 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) -8- 575892 A8 B8 C8 D8 六、申請專利範圍 上述高頻電力放大裝置具備有: 兩個放大系統; 上述各放大系統之輸入端子; 上述各放大系統之輸出端子;以及, 兩個電源電壓端子, 上述各放大系統係成縱列連接多數放大級之多級架構 3 上述一方之電源電壓端子分別連接在上述一方之放大 系統之初級放大級,及上述另一方之放大系統之其餘放大 級, 上述另一方之電源電壓端子分別連接在上述另一方·之 放大系統之初級放大級,及上述一方之放大系統之其餘放 大級, 在上述各放大系統之最後放大級與電源電壓端子之間. ,成串聯連接電感器, 上述電感器係由,表面由絕緣膜被覆之線材捲成螺旋 狀,兩端作爲電極之線圈構成, 上述電感器連接在,其主面有多數配線,及以電氣方 式連接在上述多數配線之第1電極及第2電極之模組基板 , 上述第1及第2電極從平面視之,分別具有向第1方 向延伸之第1部分、從上述第1部分之一端部向略爲垂直 於上述第1方向延伸之第2部分、及從上述第1部分之另 一端部向上述第2方向延伸之第3部分, 本紙張尺度適用中國國家標準(CNS ) Α4規格(2Ι0Χ 297公釐) (請先閱讀背面之注意事項再填寫本頁) 、1T 經濟部智慧財產局員工消費合作社印製 -9- 575892 ABICD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 上述第1及第2電極係配置成各自之第2及第3部分 互成面對面, 上述電感器係配置成,從上述絕緣膜露出之部分位於 上述第1電極及第2電極之上部, 上述電感器係藉由焊錫接合在上述第1電極及第2電 極, 上述第1電極及第2電極之各自之第2及第3部分延 伸到上述電感器之被絕緣膜被覆之線材部分。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁)575892 A8 B8 C8 D8 VI. Scope of patent application The above 1st and 2nd electrode systems are arranged so that their respective 2nd and 3rd parts face each other, (Please read the precautions on the back before filling this page) The above inductor system configuration The portion exposed from the insulating film is located above the first electrode and the second electrode, and the inductor is bonded to the first electrode and the second electrode by solder, and each of the first electrode and the second electrode is soldered. The second and third portions extend to the wire portion of the inductor covered with an insulating film. 4. A high-frequency power amplification device, characterized in that: it has a plurality of amplification systems, each amplification system is a multi-stage structure in which a plurality of amplification stages are connected in a column, between the last amplification stage of each amplification system and a power supply voltage terminal, The inductors are connected in series. The inductors are composed of a coil whose surface is covered with an insulating film and wound in a spiral shape. The two ends serve as electrodes. The inductors are connected to each other, and the main surface has a large number of wires. Module substrates connected to the first electrode and the second electrode of most of the above wiring? The above-mentioned first and second electrodes are printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and each has a first electrode extending in the first direction when viewed from a plane. Part, a second part extending from one end of the first part to a direction perpendicular to the first direction, and a third part extending from the other end of the first part to the second direction, the first and The second electrode system is configured so that the second and third parts of the two electrodes face each other. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 3 _ 575892 A8 B8 C8 _ P8_ VI. Scope of patent application The above inductor is configured such that the part exposed from the insulating film is located above the first electrode and the second electrode. (Please read the precautions on the back before filling this page) The above inductor The device is bonded to the first electrode and the second electrode by soldering, and the second and third portions of the first electrode and the second electrode respectively extend to the portion of the wire covered with the insulating film of the inductor. 5 — A high-frequency power amplification device, comprising: two amplification systems; input terminals of each of the above amplification systems; output terminals of each of the above amplification systems; and two power supply voltage terminals, each of the above amplification systems It is a multi-stage structure that connects most of the amplification stages in a column. The power supply voltage terminals of the above one are connected to the amplification of the above one. The primary amplification stage of the system and the remaining amplification stages of the other amplification system. The Intellectual Property Bureau of the Ministry of Economic Affairs The employee's consumer cooperative printed the power and voltage terminals of the other party and connected them to the primary amplifier stage of the other party's amplifier system and the remaining amplifier stages of the one party's amplifier system. The inductors are connected in series between the inductors. The inductors are composed of coils whose surface is covered with an insulating film and wound in a spiral shape, with both ends serving as electrodes. The inductors are connected to each other, and the main surface has a large number of wirings. Electrical paper size is applicable to Chinese National Standard (CNS) A4 (2—Η) X 297: 31: One 575892 A8 B8 C8 D8 VI. Patent application for the module substrate connected to the first electrode and second electrode of most of the above wiring (please read the precautions on the back before filling this page) The second electrode has a first portion extending in the first direction when viewed from a plane, a second portion extending from one end of the first portion to a direction slightly perpendicular to the first direction, and a second portion extending from the first portion. A third portion whose other end portion extends in the second direction, the first and second electrodes are arranged so that the respective second and third portions face each other, and the inductor is arranged such that a portion exposed from the insulating film Located above the first electrode and the second electrode, the inductor is connected to the first electrode and the second electrode by soldering, and the second and third portions of the first electrode and the second electrode respectively extend to the above. The wire portion of the inductor that is covered with an insulating film. 6 · A radio communication device with a high-frequency power amplifier device in its transmitting section 'can output the above-mentioned local-frequency power amplifier device to an antenna, which is characterized in that the above-mentioned high-frequency is printed by the staff consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The power amplifying device includes: an input terminal; an output terminal; a power voltage terminal; and a plurality of amplifier stages that are connected in a row between the input terminal and the output terminal, and most of the power supply voltage is supplied from the power voltage terminal. One or even all of the inductors connected to the above-mentioned amplifier level are compatible with the Chinese National Standard (CNS) A4 specification (210 X 297 ^) Γ5 ~: ~ 575892 A8 B8 C8 D8 The surface is covered by an insulating film-covered wire in a spiral shape, with both ends serving as electrodes. (Please read the precautions on the back before filling this page.) The above inductors are connected, and the main surface has most wiring, and The module substrate electrically connected to the first electrode and the second electrode of the plurality of wirings, and the first and second electrical modules are electrically connected to each other. Viewed from a plane, each has a first portion extending in the first direction, a second portion extending from one end of the first portion to be slightly perpendicular to the first direction, and another end portion of the first portion. The third portion extending in the second direction, the first and second electrodes are arranged so that the respective second and third portions face each other, and the inductor is arranged such that a portion exposed from the insulating film is located in the first portion. Above the first electrode and the second electrode, the inductor is bonded to the first electrode and the second electrode by solder, and the second and third portions of the first electrode and the second electrode respectively extend to the inductor. The wire part of the device is covered with an insulating film. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 7. A radio communication device with a high-frequency power amplifier device in its transmitting section, which can output the output of the high-frequency power amplifier device to an antenna, which is characterized by: The power amplifying device includes: input terminals; output terminals; power voltage terminals; and the Chinese standard 适用 CNS A A4 regulations ^ Γ (2T〇X 297 public ^ 575892 A8 B8 C8 D8) 6. The scope of patent application is The column is connected between the input terminal and the output terminal, and at the same time, most of the amplification stages of the power supply voltage are supplied by the power supply voltage terminal. An inductor is connected in series between the final amplification stage and the power supply voltage terminal. The inductor system is It consists of a coil whose surface is covered with an insulating film and wound in a spiral shape, with both ends serving as electrodes. The inductor is connected to the main surface with a large number of wires, and the first electrode and the first electrode which are electrically connected to the plurality of wires are electrically connected. Two-electrode module substrate The above-mentioned first and second electrodes each have a first-direction extension when viewed from a plane. A first part, a second part extending from one end of the first part to a direction slightly perpendicular to the first direction, and a third part extending from the other end of the first part to the second direction, the first part The first and second electrodes are arranged in respective second and third portions. The inductors are arranged so as to face each other, and the portions exposed from the insulating film are located above the first and second electrodes. The inductor The first electrode and the second electrode are bonded by solder, and the second and third portions of the first electrode and the second electrode respectively extend to the portion of the wire covered with the insulating film of the inductor. The radio communication device has a high-frequency power amplification device in its transmitting section, which can output the above-mentioned high-frequency power amplification device to the antenna, which is characterized by: (Please read the precautions on the back before filling this page), 1T Ministry of Economy Printed by the Intellectual Property Bureau Staff Consumer Cooperatives The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm)-/-575892 A8 B8 C8 D8 χ, patent application scope The force amplifying device is provided with a plurality of amplifying systems. Each amplifying system is connected in series to the number and structure of most amplifying stages. An inductor is connected in series between the final amplifying stage of each amplifying system and a power supply voltage terminal. It consists of a coil whose surface is covered with an insulating film and wound in a spiral shape, with both ends serving as electrodes. The inductor is connected to the main surface with a large number of wires, and the first electrode and the first electrode which are electrically connected to the plurality of wires are electrically connected. Two-electrode module substrate 5 The first and second electrodes each have a first portion extending in a first direction when viewed from a plane, and a portion extending from one end of the first portion to extend slightly perpendicular to the first direction. The second part, and the third part extending from the other end of the first part to the second direction, the first and second electrodes are arranged as respective second and third parts. The inductor is arranged such that a portion exposed from the insulating film is located above the first electrode and the second electrode, and the inductor is bonded to the first electrode and the second electrode by soldering. The first electrode and the second electrode of the respective second and third portions extend into the above-described insulating film covering the portion of the wire inductors. 9. A radio communication device, which has a high-frequency power amplification device in its transmitting section, which can output the above-mentioned high-frequency power amplification device to an antenna, which is characterized by: (Please read the precautions on the back before filling this page), π Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -8- 575892 A8 B8 C8 D8 6. Application scope of patents The above-mentioned high-frequency power amplifier devices have: Two amplification systems; input terminals of each of the above amplification systems; output terminals of each of the above amplification systems; and two power supply voltage terminals, each of the amplification systems is a multi-stage architecture in which a plurality of amplification stages are connected in a row. The voltage terminals are respectively connected to the primary amplification stage of the amplification system of the other party and the remaining amplification stages of the amplification system of the other party, and the power supply voltage terminals of the other party are respectively connected to the primary amplification stage of the amplification system of the other party, and The remaining amplification stages of the above-mentioned amplification system are The inductor is connected in series between the final amplification stage of the system and the power supply voltage terminal. The inductor is composed of a coil whose surface is covered with an insulating film and wound in a spiral shape. The two ends are used as electrodes. The inductor is connected to The main surface has a plurality of wirings, and a module substrate that is electrically connected to the first and second electrodes of the plurality of wirings. The first and second electrodes each have a structure extending in a first direction when viewed from a plane. The first part, the second part extending from one end of the first part to a direction perpendicular to the first direction, and the third part extending from the other end of the first part to the second direction, this paper Standards are applicable to China National Standard (CNS) A4 specifications (2Ι0 × 297 mm) (Please read the precautions on the back before filling out this page), 1T Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives-9- 575892 ABICD Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 6. The scope of the patent application The above-mentioned first and second electrode systems are arranged so that their respective second and third parts face each other, and the above-mentioned inductors are The portion exposed from the insulating film is located above the first electrode and the second electrode, and the inductor is bonded to the first electrode and the second electrode by solder, and each of the first electrode and the second electrode is soldered. The second and third portions extend to the wire portion of the inductor covered with the insulating film. This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) 575892 附件:第90106793號專利申請案 中文圖式修正頁民國92年2月13日修正 5/32 110 醒01搬575892 Attachment: Patent Application No. 90106793 Chinese Schematic Amendment Page Amended February 13, 1992 5/32 110 Xing 01 Move gg
TW90106793A 2001-03-21 2001-03-22 Semiconductor device and its manufacturing method, and semiconductor manufacturing apparatus TW575892B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/002224 WO2002052589A1 (en) 2000-12-25 2001-03-21 Semiconductor device, and method and apparatus for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
TW575892B true TW575892B (en) 2004-02-11

Family

ID=40512564

Family Applications (1)

Application Number Title Priority Date Filing Date
TW90106793A TW575892B (en) 2001-03-21 2001-03-22 Semiconductor device and its manufacturing method, and semiconductor manufacturing apparatus

Country Status (1)

Country Link
TW (1) TW575892B (en)

Similar Documents

Publication Publication Date Title
JP6947153B2 (en) High frequency module and communication equipment
US10476442B2 (en) Semiconductor package having an isolation wall to reduce electromagnetic coupling
US10608682B2 (en) Radio frequency module
KR100751451B1 (en) Semiconductor device, and method and apparatus for manufacturing semiconductor device
JP4209773B2 (en) Semiconductor device, manufacturing method thereof, and wireless communication device
TWI640160B (en) Autotransformer-based impedance matching circuits and methods for radio-frequency applications
CN102739169B (en) Power combiner, containing its power amplifier module and signal transmitting and receiving module
US20170271302A1 (en) Mobile device with radio frequency transmission line
US20210005578A1 (en) Radio-frequency module and communication apparatus
US8344259B2 (en) Connection terminal, package using the same, and electronic apparatus
US10014233B2 (en) Electronic component containing package and electronic device
US10084224B2 (en) Compensated electromagnetic coupler
CN210246699U (en) Power amplifying module
US20210257977A1 (en) Power Amplifier with Decreased RF Return Current Losses
TW575892B (en) Semiconductor device and its manufacturing method, and semiconductor manufacturing apparatus
US12046810B2 (en) Radio-frequency module and communication apparatus
US20230179248A1 (en) Radio-frequency module and communication apparatus
CN111989861B (en) High frequency power amplifier
US8502616B2 (en) Composite electronic module
JP2007088333A (en) Method for manufacturing electronic device
US11296661B2 (en) Amplifier circuit
EP1595330A2 (en) Dual band power amplifier with improved isolation
JP2006108416A (en) Manufacturing method for electronic device
JP2005316744A (en) Ic tag, interposer for it, manufacturing method for them, and manufacturing method for sheet for ic tag

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees