TW574130B - An innovative micro-fabrication for electroosmotic flow (EOF) control via a self-assembled monolayer by using a perpendicular electric potential - Google Patents

Abstract

In the invention we proposed an innovative micro-fabrication for electroosmotic flow (EOF) control via a self-assembled monolayer by using a perpendicular electric potential. The microfluidic chip consisted of an upper layer with a micro-channel and a bottom substrate with a gate electrode and two drain/source contacts. A self-assembled monolayer (SAM) serving as the insulator was formed on the gate electrode. A longitudinally high voltage was applied to the two ends of micro-channel to offer the driving force of EOF. The surface potential of SAM insulator can be controlled by applying a varied gate voltage through the action of electric polarization. Because the surface potential dominated the polarity and magnitude of electric double layer, the direction and rate of EOF could be controlled by the gate voltage. As a result of the ultra-thin thickness (several nanometers) of the insulator, made of SAM, the advantages of microfluidic chip include ease of fabrication, a lowly induced gate voltage, and an excellent EOF control.

Description

574130

[Technical field to which the invention belongs] The present invention relates to a recording i ® Mi ** 丨 丨, t *

Field-effect electric field controlled microosmosis microchip manufacturing method, especially an insulating layer made of film (sel f-assembled monolaye, SAM), modified on the electrode of the wafer substrate, forming an extremely thin insulating layer, reducing induced voltage, reducing the system [Electroosmotic Flow; EOF] Voltage-controlled self-assembled thin-film wafer manufacturing method. " EOF, [electroosmotic flow] has characteristics such as easy to induce, flat plate, flow curve, and no need to add a large pump system, so it is suitable for laboratory waferization with MEMS process [Lab-on-a-chip] 〕 System or microfluidic control system. In this field, the application of capillary electrophoresis chips with various detection systems is currently the most vigorous and mature one. Recently, using the characteristics of electroosmotic flow, capillary electrophoresis chips have been successfully used for the detection of DNA, the analysis of proteins, the rapid detection of environmental or biochemical substances, and the separation of cells in microchannels. In contrast, the present invention mainly provides a new, easy-to-manufacture, effective control and low-energy-consumption electroosmotic flow control technology platform, which is applied to microfluidic flow: volume control and capillary electrophoresis separation wafers. In this way, without changing the intensity of the external sleeve driving electric field, the speed and the phrase of the electroosmotic flow can be controlled in real time. [Previous technology] Currently used in bioiicrochip systems' for 574130 V. Description of the invention (2 The technology that controls the direction and flow rate of microfluidics is mainly driven by air pressure, hydraulic pressure, and electric power (electricity). In particular, the electric drive drives the hydration ions in the electric double layer on the surface of the microchannel through the force of the electric field. When the hydrated positive (anion) ions are moved to the negative (positive) pole by the electric field force, the liquid in the microchannel can be driven. This is the generation of electroosmotic f10W (EOF). However, when the solution pH > 3 in the traditional capillary, the surface will show a strong negative charge, so that eOF can only move in one direction of the electric field, and can not arbitrarily do two-way flow. Please refer to Figure 8. As shown in the traditional capillary electrical parameter channel, due to the silanol group on the surface of the tube wall (.4), it will dissociate into negatively-charged silicon oxygen at a pH value greater than 3. The anion makes the inner surface of the capillary tube wall (4) in a negatively charged state. At this time, the positively charged hydrated cations in the solution are attracted to the capillary surface to form an electric double layer, which generates an electroosmotic flow (EOF) effect under the action of an external electric field. , Help to improve the separation of samples. The traditional electroosmotic flow (E 0 F) is affected by the pH value of the buffer solution, the ionic strength of the electrolyte solution, and the functional groups on the inner surface of the capillary ’, which makes it difficult to control the flow rate and direction of the liquid in the capillary electrophoresis channel. In 1990, Lee et al. Used the external external voltage on the capillary tube to change the concept of the Γ potential (electrical double-layered electrical standing) by inducing polarization through the tube wall (4) of the matte tube. To control the flow direction and flow rate of E0F. Later, there is also the use of conductive dissolved and ionized gases and conductive n molecules as conductors to change the potential, but this device has several disadvantages: 1. The thickness of the tube wall (4) of a general capillary is about tens to hundreds Micron

574130 Five 'invention description (3) (micrometer), new life from sufficient induced electric field. " The applied voltage needs to be up to several thousand volts in order to generate an electric charge of minus two: (The △ plane of the thin second will be negatively charged when the pH value is greater than 3 ^ The U direction to control the flow direction is opposite to the electric field direction) Can't produce, can't. 3 · Capillaries are less ancient: ^ network) to achieve a sample & connection to form a microfluidic network (because the above methods are all round; V switching, mixing and separation functions. C capillary design is achieved, in order to be able to be used in the micro-channel s — et al. H; please see the ninth figure,) structure, and then use anodic bonding; "= = surface potential of the micro-channel (: control two: ... 6) , And then control the electric direction of "L moving direction" at the same time plus the induced gate electric house (+ MV ~ maximum controllable 1 controllable speed, the speed of the two-way electroosmosis induced by its system | ^ produce 3 ~ ^ 1 " ¥ ^ 1〇4 (environmental solution ^ 3.6); but when the pH of the solution is higher than 3.6 (environmental solution ρΗ45), the field-effect electric field caused by the externally induced electric field cannot be overcome. Therefore, it can only induce a unidirectional positive electroosmotic flow;]. Jin; there is also the use of glass as an insulating layer (5) (thickness of 5 〇micron) control E 〇F in the glass = coupling wafer or the use of dioxide as the insulating layer (5 micron as much as possible) in the P DMS and dream as the substrate If you need it, you ca n’t do any biological experiment. You can only manipulate it. 2. Only in the electrical process. 3. Induced by a few meters to dozens of times. 4. You should consider the future and the insulation of the electric field in [发 (4) The insulation layer voltage must be controlled. The film can be formed by the micrometer, and it can be known that the commercialized content (5) of this film can reach hundreds of E 0 F solutions with the same pH value (5). This film has a thicker field effect. Electric field, its control and portability] Thickness and the material of the micro-channel (6), so that = volts, so that when the pH value is greater than 3, the large current catches. Moreover,-the general tradition is about 7 · 〇, so Under these conditions, the infiltration μ 'cannot produce bidirectional control. In terms of fabrication, the thickness of the microcomputer edge film (5), which needs to be complicated, usually reaches several hundred nanometers, and the insulating film (5) has a relatively smaller voltage at the same gate voltage. The efficiency of the two-way electroosmosis system is not high, and it has considerable difficulties in application.

In view of this, the inventor has worked tirelessly to improve the lack of the above-mentioned conventional techniques. With his rich professional knowledge and years of practice, he has been assisted by many ingenuity and many experiments, and finally researched carefully. Draft this creation. '' β ▲ Ben = Ming is a microchip manufacturing method related to a voltage-controllable self-assembled thin film-induced electricity-controlling electroosmotic flow. The microchip is a corresponding combination of a bottom plate and a top plate; the bottom plate is An intermediate electrode is provided in the middle of the substrate, and an extremely thin S Α μ [self-organizing film] is formed on the surface of the electrode, which serves as a recess that is slightly narrower than the gate electrode at the bottom of the top plate. Swim lanes, microchannels can be filled with buffer solution; when in use, they are connected to the positive and negative ends of the directional power supply at the two ends of the microswim lane as an electric field generating electroosmotic flow, and the gate electrode

Page 9 574130 V. Description of the invention (5) The induced voltage is applied to make the insulating plutonium produce an electrodetic effect, thereby controlling the direction and speed of the electroosmotic flow; since the above-mentioned insulating layer is composed of SAM [self-organizing film], < Easy production, thin thickness, which can reduce the induced voltage and volume, and can control the direction and flow rate of the electroosmotic flow arbitrarily regardless of whether the solution of the microchannel is acidic or neutral. [Embodiment Fangwu] In order to make the technical means used in the present invention and achieve the effect easy to understand, it is explained with drawings as follows: First, please refer to the 'microchip of the present invention' shown in the figure is composed of the bottom plate (1) and the top plate (2) Composition. The bottom plate (1) is provided with an extremely thin and long gate electrode (1 2) in the middle of the substrate (1 1). The surface of the gate electrode (1 2) has an insulating layer (13). In addition, the top side of the bottom plate (1) is combined with the top plate (2), and the bottom side of the top plate (2) is recessed with an elongated micro-swim lane (2 1) slightly narrower than the electrode, and the micro-swim lane (2 1) is sealed to the insulation Layer (1 3) on the top side. The top plate (2) is provided with holes communicating with the micro-swim lane (21) at both ends thereof as storage tanks (22) for filling the slow balance solution, and the micro-swim lane (21) can be used for filling the buffer solution. In use, it is connected to the positive and negative ends of the high-voltage power supply at both ends of the micro-swim lane (2 1) as an electric field to generate electroosmotic flow (EQF), and the gate electrode (1 2) is added to the induced field effect electric field. The voltage (that is, the idler voltage, V g) is used to control the surface potential of the bottom insulation layer (1 3) of the micro-swim lane (2 1), and then to control the electric double-layer potential to control the flow direction of the electroosmotic flow (EOF). And speed.

Page 10 574130 V. Description of the invention (6) When manufacturing the bottom plate (1), a chemical molecule of one material is made into a solution, and then the substrate (丄 丄) with the gate electrode (; [2) is immersed in In the solution, after a period of time (such as 18-24 hours), a chemical molecule of one material can just interact with the surface of the gate electrode (1 2), so that a chemical molecule of one material is on the gate electrode (i 2 ) S AM (self-organizing film) is formed as an insulating layer (1 3), and thus a base plate (1) is made. Since the insulating layer (1 3) is a monomolecular layer, it is very thin, which is also the main claim of the present invention. The chemical molecules of one of the above materials form SA Μ (self-organizing binding film) on the gate electrode (1 2). The methods can be roughly divided into four categories: .1. The chemical molecules of one material are carbon long-chain fatty acids. [Aikan〇ic acids (CnH2n + 1C00H)] Gate electrode with metal cations on the surface (12) [such as the surface of alumina or silver]; 2. One of the chemical molecules is an organic dream derivative (organosilicon derivatives) ) [Such as alkylchlorosi lane, alkylaminosi lane and alkyalkoxysilane] gate electrode (12) with hydroxyl group on the surface; 3 · One of the chemical molecules is organic sulfur (such as n-alkyl sulfide, thiophenol, thiophene, etc.) to the transition metal gate. Electrode (1 2) is formed by adsorption, such as carbon long chain thiol is formed by adsorption on the surface of gold or silver gate electrode (1 2); 4. One of the chemical molecules is alkyl, which is made of silicon. Into

Page 11 574130 V. Description of the invention (7) The surface of the gate electrode (12) is formed by adsorption. When manufacturing the top plate (2), a material that can be made into a flexible and soft top plate (2) can be used, such as polydimethylsiloxane (PDMS). In this way, after placing the top plate (2) on the flat bottom plate (1) around it, the top plate (2) can be naturally adsorbed and combined with the bottom plate (1) due to the physical characteristics of Van der Waals force. The following describes the manufacturing method of the present invention according to an embodiment. First, when the bottom plate (1) is manufactured, it is classified as organic sulfur.

1-oct: adecanethiol (ODT, Aldrich) chemical molecule is used as a material, dissolved in about 99.5% anhydrous alcohol into a solution of about 2 m, and then a glass wafer with a gold gate electrode (1 2) The substrate (1 1) is immersed in the above solution; wherein, the substrate (1 1) is made of glass. In order to form a gold gate electrode (12) on a glass wafer, chrome can be evaporated on the glass wafer as an adhesion layer. Gold is then vapor-deposited on chromium. The thickness of gold / chromium is about 100/30 nm, its length is about 1.2 cm, and its width is about 100 #m. This is a conventional technology.

'Same' is also formed on the glass wafer substrate (1 1) at both ends by forming a source electrode (1 4) and a drain electrode (1 5) as two high-voltage power sources for the electric field. ) To form a wire (16) connected to the gate electrode (12) as a voltage input terminal for inducing an electric field; and then 'immerse the substrate (1 1) in the solution for about 18 to 2 4 hours as described above. After taking out, the chemical molecules of the material will form an SA Μ (self-organizing film) insulating layer (i 3) on the gate electrode (1 2), thereby making the bottom plate

574130

Furthermore, please refer to the fourth figure. When manufacturing the top plate (2), the standard lithography technology was used to produce a height of about 13 # m, a width of 50 #, and a length on the hair substrate. Approximately 1.5 cm long convex strips (31) were used as the master mold (3), and then poly (dimethylsi loxane) (PDMS) monomer and curing agent were used for about 10: The ratio of 1 is mixed uniformly, and then it is poured at 90 ° C for 1 hour to cure it. The mold (3 ◦) is peeled off and removed, that is, the top plate (2). Also refer to dig holes at the two ends of the micro lane (2 1), and the groove (2 2) (see the first to third figures), when the top plate (2) is placed on the bottom, the top plate (2) is elastic. And 1) the surface is flat, so it only needs to be combined with the physical characteristics of Van der Waals force to form a microchip. After the master mold (3) is heated, and the PDMS is cured, the master mold is shown as a picture with an elongated microchannel (2 1), and then the top plate (2) is used as a fillable buffer solution. Jian's' combined bottom plate (1) and top plate (2 plate (1), because of the softness of the bottom plate made of glass (the hand is slightly pressed, the top plate (2) and the flat bottom plate (1) Suck naturally

Please refer to the first, second, and fifth figures. In use, the source and drain electrodes (> 4) and the drain electrode (> 2 of the storable tank (2 2)) are applied to the positive and negative ends of the south pressure source to generate electroosmotic flow. The electric field is controlled by the induced voltage to control the sam absolute value of 0.8V ~ -UV by the induced voltage: when the induced voltage range is + field gate voltage is positive, the induced positive

574130 V. Description of the invention The surface potential creates an electric field reversal, as shown in the figure. The reverse is called the positive determinable flow experiment. For this purpose, molecules are used respectively. [DA] [surface substrate (1 layer (13% of the top plate of two microchips of electroosmotic flow 1 2) Shi (9) will attract the double layer, so at this time, the speed of the electroosmosis is taken as an example: verify that this application belongs to T · [. Table functional group 1)), and then (21 micro swimming electric field, In the pre-induced anion of the buffer solution in the micro-channel (2 1), under the above-mentioned externally applied high-voltage power supply, the direction of the electroosmotic flow and the electrophoretic electricity is called reverse electroosmotic flow [as shown in the fifth figure, the gate voltage is negative At the same time, the electroosmotic flow co-current with the electric field. In addition, the size of the induced voltage is controlled, that is, the organic sulfur surface and the functional carboxyl gold gate will be used to combine the channel (2 about 80 V voltage + effectively control the direction of the electroosmotic flow) It is different from a base material (1) with different functional groups which is a fluorenyl group (me thy 1, -CH3)] (carboxy1, -C00H)], which is made of SA on the electrode (12). Two microchips. 1) High voltage power is applied to both ends, / cm of the axial electric field, and

0 · 8 V 0.8 V. At such a flow rate, a buffer solution of qualitative chemical or MUD glass wafer M made of insulating DMS is used to generate a polar electrode (filling ρΗ6 · 0 or 3 · 0 in the microchannel (2 1)) with different sizes and polarities. .Sexually induced voltage, observe the relationship between the electroosmotic flow mobility (#eQf) and the induced gate voltage (Vg), as shown in Figures 6 and 7. Due to the ODT surface and PD MS The surface of the microchannel (2 1) is all methyl, so it is not affected by the pH of the solution. The size and polarity of the gate voltage can be completely controlled. # EQf [Electroosmotic flow rate] The size and direction. If it is formed by MUDA When the insulating layer (1 3), the carboxyl group on the surface is

Page 14 574130 V. Description of the invention (10) When PJI6 · 〇, it will dissociate into a negatively charged surface, and when the gate voltage is negative, it will strengthen the negative surface potential of this insulating layer (1 3), so The measured A-is larger than 〇DT. However, when the gate voltage is positive, the induced positive surface potential cannot overcome the negative electrical property of the original surface, and the negative surface potential appears as a sum, so that # e〇f Can not show the reverse control is wider and smaller than 0D, but the surface will not dissociate when ρ3.0, so you can control the direction and size of #ecf. Therefore, in Table 1 below, the efficiencies of V eof compared with the above-mentioned “Yan Jiu” in the prior art are compared with the present invention. Among them, comparing the development and progress of making a controllable microfluidic wafer for the first time using lithography and photoengraving technology since 199 · 9 · year, the comparison results clearly show that s A 2 is used as the insulating layer. Induced #ecf has the best control range, and its size and direction can be controlled linearly by the magnitude and polarity of the induced voltage [gate voltage, Vg] 'even in the buffer solution ρΗ6 · 〇. The induced idler diffusion (vs) is required to be the smallest but the control factor (induced) is one hundred times that of other studies, which proves that the invention can effectively achieve full control with low voltage (<1 · 〇V) The purpose of the velocity and direction of the microfluidics is shown in Table 1. 黑 1 Black, liquid-insulated layer induces electrical voltage Vg (V) Feiba e (mmmmm &quot; eof (XiaW / Vs)) r ~ ~… Wide control index Δ / Zeof / AVg (X104cm2 / V2s) Material thickness (nm) 1 Ί mi] X6 ~~~ — (Si3N4) 390 25 ～ -37 -2 · 0 ～ 1.5 5.6 1 43 (Si3N4) 390 50 ～ -50 4.3 ～ 6.0 1.7 L 3 (Si〇2) 50000 172 ~ 52 -1.1-1.9 4.0 (SiOd 2000 460 ~ -300 -0.9 ^ 2.9 0.5 D (SiOJ 2000 460 ~ -300 1.2 ^ 3.4 0.3 The present invention (ODT) 2.9 0.8- 0.8 -3.1-3.3 400.0 The present invention (ODT) 2.9 0.8 ~ -0.8 -3.1 ~ 3.4 406.3

Page 15 574130 V. Description of the invention (π) * References 1. RBMSchasfoort, S. Schlautmann, J. Hendr i kse, A. van den Berg, Science 28 6, 942 (1999). 2. NAPoison, MA Hayes, Anal, Chem. 72, 1088 (2000) · 3 · J · S · Buch, P · -C · Wang, D · L · D evoe, C · S · L ee,

Electrophoresis 22, 3 9 0 2 (2 0 1). From the above description, it can be seen that the present invention has the following advantages: 1 · SA Μ (self-organizing film) insulation layer (丄 3) is easy to make and modify, only need to soak That is, the chemical adsorption and co-bond formation can be performed spontaneously; in addition, the modification position and the hydrophilicity can be changed through the selection of different functional groups. The surface of the stomach 2. The thickness of the SAM insulation layer (1 3) is extremely thin, within nanometers, so the required relative induced voltage is less than 丨, and the magnitude of the induced voltage can be charged with a dry battery, and the cost can be reduced. System volume. Working system ’not only cuts

3. The electric double-layer potential controlled by the induced surface potential can arbitrarily control the direction of the electroosmotic flow, and it can be used as a medium and low speed microtubule under the acid or neutral solution, regardless of the pump. 浦The liquid that pushes the liquid in S channel 4. The electric double-layer potential r (Zet a) controlled by the induced surface potential

574130 V. Description of the invention (12): 0: &gt;] ed 'Controls the detection of the target solution in the micro-lane. The sampling and protein sampling analysis, because the measured signal = ^ put = accuracy problem …, It has the effect of increasing the concentration and increasing the amplification. King of Zhuangzhuang 5 · Since SAM [Self-organizing membrane is ugly, ugly, very small, so it is used in biochips] Micro 7 ^ Sexual disease tissue location:?; = Mu ... Slowness of implantation into the human body

The peak uses the self-organizing film and a small voltage of 1.0V: f (Zeta Potential) to harm the human body to measure the secretions secreted by pathological tissues, and the round of the target drug in the micro lane ", The signal to control the side effects of another thing caused by the human body; rotation of the agent Xia, ... to improve the past due to drugs 6. · SAM [self-organizing thin 臈] when induced by the small thunder nucleus, at pH 3, has a considerable 2U1 ·, The influence of the lower inter-electron value, so SAM [self-organizing film 7 222 is not affected by the body fluid M of the body. It is not easy to be damaged by the body fluid of the body, and in summary, the embodiment of the present invention can indeed achieve Therefore, the specific structure disclosed is not only untreated # = 翊 's use effect but also bismuth VIII Yu Youshe-Γ ^ σ m This 9 is found in similar products, 羑: i: departure; i profit Shen: It fully complies with the requirements and requirements of the Patent Law, and is grateful for your review, and will give Zhunzhu 574130 a simple explanation of the diagram. [Schematic diagram 1st diagram 2nd diagram 3rd diagram 4th diagram 5th diagram 6th diagram 7th diagram Eighth picture Ninth picture [Refer to the drawing number &lt; The present (1) (12) (14) (16) (21) (3) &lt; Know (4 ) (6) Dimensional decomposition of the plate Schematic view of the combination of the side view of the plate and the cross-section of the end surface of the plate. Schematic of the seepage generation mechanism. The electroosmotic flow rate and the induced voltage are SA M.] The electroosmotic flow rate and the induced voltage A are SA M.) The electroosmotic flow generation mechanism. Description of electroosmotic flow generation mechanism] The bottom plate of the present invention and the bottom plate of the present invention and the bottom plate of the present invention and the bottom plate of the present invention The relationship diagram after the experiment (with MUD: one of them is known in the micro-pipeline: the other is in the micro-pipeline).

&gt; Bottom plate (1 1) Substrate gate electrode (1 3) Insulation layer source electrode (1 5) Shallow electrode wire (2) Top plate. Micro-swim lane (2 2) Storage tank female mold (3 1) convex tube Wall (5) Insulated micropipes 第 18 页

Claims (1)

574130 Six 'application patent scope 1 · A microchip manufacturing method of voltage controllable self-organizing film-induced field effect electric field control pen parameter flow, the microchip is formed by a corresponding combination of a bottom plate and a top plate; the bottom plate is in the middle of the substrate A gate electrode is provided, and an insulation layer is formed on the surface of the gate electrode; a concave groove on the bottom side of the top plate is slightly narrower than the electrode, and the microchannel can be filled with a buffer solution; To the positive and negative ends of the t power supply as the electric field generating the electroosmotic flow, and applying the voltage induced to the field effect electric field to the gate band to control the flow of the electroosmotic flow; its characteristics are: when manufacturing the bottom plate, it is a chemical molecule of one material Make a compound solution, and then immerse the substrate with the gate electrode in the solution; the chemical molecules coated with a material will interact with the material on the surface of the gate electrode to form a self-organizing film (sAM) on it. Separate insulation layer for electroosmosis. s ^ As a voltage-controllable self-organizing material as described in item 1 of the thin film control range; the method of making microchips by electroosmosis, in which-the gate electrode 3: Γ chain fatty acid has metal cations on the surface 3 electrodes form a self-assembled thin film (s AM). The chemical analysis of the voltage-controllable self-organizing material as described in item 1 of Yueyu ’s thin film attracting method: a method for producing permeated microchips' # 中 ， 其 -electrode 4 shape: since: thin film with oxygen on the surface A method for manufacturing a microchip with a voltage-controllable self-organizing chemically controlled electroosmotic flow according to one of the voltage-controllable self-organizing materials according to item 1, wherein one of them is formed by f adsorption by organic sulfur to a gate electrode which is an excessive metal. Into a self-organizing film (SAM). p 1: pole application, page 19, 574130 6. Scope of patent application &quot; ~ * —- ^ + 5 · As described in item 1 of the patent scope, voltage-controllable self-organizing film-induced field effect electric field control electroosmotic flow In the microchip manufacturing method, a chemical molecule of one material is an alkyl group and is adsorbed on the surface of a gate electrode made of silicon to form a self-assembled film (SA M). 6 · The method for producing a microchip with a voltage-controllable self-cylinder $ film-induced field effect electric field control electroosmotic flow as described in item 1 of the scope of the patent application, wherein the above-mentioned sub-bubble solution is a chemical molecule of one material Make a 2 mM solution in 99.5% absolute alcohol. ^ 7. Self-organization of voltage control type as described in item 1 of the scope of patent application The thin-film-induced field-effect electric field controlled electroosmotic microchip manufacturing method, wherein the time for immersing the substrate in the solution is about 18 to 24 hours. 8 · —A microchip manufacturing method of voltage-controllable self-organizing film-induced field effect electric field control electroosmotic flow, the microchip is formed by a corresponding combination of a bottom plate and a top plate; the bottom plate is provided with a gate electrode in the middle of the substrate, An insulating layer is formed on the surface of the gate electrode; a recess on the bottom side of the top plate is slightly smaller than the electrode, and a microchannel can be filled with a buffer solution; when in use, it is connected to the positive and negative ends of the high voltage power supply at the two ends of the microchannel to generate electricity The electric field of the percolation, and the voltage applied to the gate electrode to induce a field effect electric field, thereby controlling the flow of the electric percolation; It is characterized in that when manufacturing a base plate, a molecular electrode with a metal cation on the surface of a carbon long-chain fatty acid is used to form a molecular layer of a self-assembled film (SAM) as an insulating layer for controlling electroosmotic flow. 9 · A voltage-controllable self-organizing film-induced field effect electric field control electroosmosis microchip manufacturing method, the microchip is formed by a corresponding combination of a bottom plate and a top plate; the bottom plate is provided with a gate electrode and a gate in the middle of the substrate Electrode surface Page 20 57 413 °, the scope of the patent application to form an insulation layer; ^ Road can be filled with high and negative power supply y to induce the field effect of its characteristic surface isohydroxide I as a control I 0 ·-a kind of electroosmotic flow The bottom surface forms an insulating layer. The microchannel can supply the positive electrode of the high voltage power supply to the gate electrode layer whose characteristic is the induced field. It is used to control II. A high-voltage power source can be supplied in the layer micro-swim lane to induce the field device; electricity is generated by borrowing the micro-concave liquid of the self-layered layer; when pressure is generated, the micro-concave of the self-layered layer is generated. It is liquid; it generates pressure and is slightly narrower than the electrode. When it is used micro-channels, it is connected to the electric field applied to the permeate at both ends of the micro-channel and controls the flow of the electro-osmotic flow to the gate electrode. When the molecular self-organizing thin wafer of the superficial thin film (SA M) is used with a gate-to-electrode ratio, the electroosmotic flow control system uses the organized thin film. When a gate-to-electrode is used, electroosmotic flow is used to control the electric field to control the junction electrode table lane, and the gate is electrically driven at both ends; excessive gold molecular electric field control is corresponding to the junction electrode table lane, and the gate is electrically connected to the gate at both ends; The bottom side of the top plate is concavely filled with a buffer solution end as a voltage for generating an electric field: a method of manufacturing an absolute voltage control wafer for manufacturing bottom gate electrode-shaped electroosmotic flow, the plate is connected to the substrate; : Manufacture of the absolute voltage control wafer manufacturing method of the bottom plate and the adsorption-type electroosmotic flow, the plate is attached to the substrate; the bottom side of the top plate is filled with a buffered negative end to act as an electric field of the electric film to induce the field effect bottom plate and the top plate electrode, and the gate is slightly narrow. The micro-system is in the micro-lane electric field, and the electro-osmotic flow machine sulfur pair belongs to the (SAM) membrane-induced field effect of the bottom plate and the top plate electrode. The slightly narrow gate is in the micro-lane electric field. Page 21 574130 VI. The scope of the patent application is characterized by the following: when manufacturing the base plate, alkyl groups are adsorbed on the surface of the gate electrode made of silicon to form a molecular layer of self-assembled film (s A M) as a control electroosmotic flow. The insulation layer.