TW569656B - Method for manufacturing a flexible printed wiring board, and a flexible printed wiring board obtained through the manufacturing method - Google Patents

Method for manufacturing a flexible printed wiring board, and a flexible printed wiring board obtained through the manufacturing method Download PDF

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Publication number
TW569656B
TW569656B TW091132587A TW91132587A TW569656B TW 569656 B TW569656 B TW 569656B TW 091132587 A TW091132587 A TW 091132587A TW 91132587 A TW91132587 A TW 91132587A TW 569656 B TW569656 B TW 569656B
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Taiwan
Prior art keywords
circuit
polyimide resin
resin film
substrate
layer
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TW091132587A
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Chinese (zh)
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TW200302687A (en
Inventor
Toshiko Yokota
Hideaki Matsushima
Makoto Dobashi
Naotomi Takahashi
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Mitsui Mining & Smelting Co
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Publication of TW200302687A publication Critical patent/TW200302687A/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0393Flexible materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/05Flexible printed circuits [FPCs]

Abstract

To provide a flexible printed wiring board excellent in a migration resistance. A method for manufacturing a flexible printed wiring board by way of circuit-etching a copper clad laminate, wherein the method comprising the steps of, after etching, (a) removal step of residual metallic component, namely pickling a circuit-etched substrate to remove metallic component from residual carboxyl metallic salt on a surface of a base material resin exposed in the gaps among circuits formed on the substrate, thereby converting into a carboxyl group; and (b) re-ring-closure step, namely heating the residual-metallic-component-removed substrate for 10 to 80 minutes under a high temperature atmosphere at 180 to 200 DEG C, thereby ring-closing the surface of a polyimide resin film exposed in the gaps among circuits formed on the substrate.

Description

569656 案號 91132587 Λ_____Ά 曰 修正 五、發明說明(1) 發明所屬之技術領域 本發明係有關於使用所謂雙層撓性銅面層壓板的撓性 印刷線路板之製造方法。 先前技 聚 性等諸 之三層 之捲帶 而 於狹小 線路密 樹脂膜 不 雙層基 採用, 聚醯亞 聚醯亞 化,且 實用。 合無電 法形成 剝離強 因 術 、電特 箔貼合 線路板 為裝置 為提升 醯亞胺 層作為 之廣泛 銅層與 法係以 亞胺 亦難臻 法或組 解鍍層 銅層之 膜與銅 醯亞胺樹脂柔軟富撓性,機械強度、耐熱性 特性優良,向來廣泛應用於使用黏合劑與銅 基板撓性印刷線路板,及可謂一種撓性印刷 自動接合(TAB)產品之製造 近年來電器、電子產品之高度袖珍化要求, 空間,撓性印刷線路有薄而小型化之需求, 度、耐折強度,省略黏合劑層,而有了於聚 表面直接具備銅層之雙層基板的提供。 於聚醯亞胺樹脂膜表面使用黏合劑,形成銅 板之方法,雖有蒸鑛法、洗鳞法、鑛層法等 但採用蒸鍍法以蒸鍍形成銅層之雙層基板, 胺樹脂膜欠缺密合力,且抗遷移性差。声鱗 胺前驅物聚酿胺酸塗布於銅落,須於高=醯 所製造之基板容易產生翹曲之捲曲不良,故 因此,最常用的是鍍層& ’ 一般係電解鍍層 解鑛層法及電鑛法而使用之方法,但以益電 之銅層仍欠缺與聚醯亞胺樹脂膜之密人力, 度低,缺乏基板可靠度。 、 口 ’ 而,替代上述方法,已有可維聚醯亞胺樹脂569656 Case No. 91132587 Λ _____ Ά Revision V. Description of the invention (1) Technical field to which the invention belongs The present invention relates to a method for manufacturing a flexible printed wiring board using a so-called double-layer flexible copper-clad laminate. Three layers of tapes, such as the previous technology, are used for narrow lines, dense resin films, not double-layered, polyfluorene, polyfluorene, and practical. Combined with electroless method to form peeling strong factor technique, electric special foil laminating circuit board as a device to enhance the 醯 imine layer as the extensive copper layer and method. It is also difficult to use imine to achieve the method or decompose the copper film and the copper layer. Imine resin is soft and flexible, and has excellent mechanical strength and heat resistance. It has been widely used in the manufacture of flexible printed circuit boards using adhesives and copper substrates, and can be described as a type of flexible printed automatic bonding (TAB) products. Electronic products require a high degree of compactness, space, and flexible printed circuits are required to be thin and miniaturized. Degree, folding strength, omission of the adhesive layer, and the provision of a double-layer substrate with a copper layer directly on the poly surface. A method of forming a copper plate by using an adhesive on the surface of a polyimide resin film, although there are a vapor deposition method, a scale washing method, a ore layer method, etc., but a vapor deposition method is used to vapor-deposit a double-layer substrate forming a copper layer. Lack of adhesion and poor migration resistance. Acrylic acid precursor Polyvinylamine is applied to copper, and the substrate produced by high = 醯 is prone to warp and curl. Therefore, the most commonly used is plating & 'general electrolytic plating demineralization method And electric ore method, but the copper layer of Yidian still lacks the dense manpower of polyimide resin film, the degree is low, and the reliability of the substrate is lacking. However, instead of the above method, there are already succinimide resins.

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塞號 911325fL 五、發明說明(2) 層之較佳密合性,如日本專利特開200 1 -73 1 59所揭示之直 接金屬化法之提議。 發明内容 發明所欲解決的課題 然而,有別於通常之硬質 線路板,及可謂一種撓性印刷 之細間距線路之形成已屬平常 之需求。 印刷線路板’上述撓性印刷 線路板之TAB產品,極微細 ’但有具備良好抗遷移性能 撓 件構裝 中,構 散於聚 遷移發 良之起 謂抗遷 如 待有9 持良好 用以解 性印刷 於該產 成該撓 醯亞胺 生時, 因,導 移性優 上述之 使用直 的密合 決課題 線路板 品組裝 性印刷 樹脂基 相鄰線 致嚴重 之基板 雙層基 接金屬 性,且 的手段 成電器、電子設備使用時之通電步驟 線路板,TAB產品之線路的銅成分擴 板表面或内部,形成電橋之現象。有 路間形成短路,成為誤動作、動作不 問題。因此,不易起遷移之基板即可 〇 板,抗遷移性並非優良。故市場上期 化法時聚醯亞胺樹脂骐與銅層依然保 抗遷移性優之雙層基板。 因而,本發明人 製造硬質印刷線路板 遷移性之製造方法。 說明本發明之前 等精心研究結果想出以 ,撓性印刷線路板時, 以下說明本發明。 ’為易於理解本發明, 下發明有關之 可大幅提升抗 先簡單說明遷Plug No. 911325fL 5. Description of the invention (2) The better adhesion of the layer, as proposed by the direct metallization method disclosed in Japanese Patent Laid-Open Nos. 200 1 -73 1 59. DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, it is a common demand to form a fine-pitch circuit which is different from a general rigid circuit board and a flexible printing. Printed circuit board 'The above-mentioned flexible printed circuit board's TAB products are extremely fine', but in the construction of flexures with good anti-migration performance, the structure is dispersed and gathered, which means that the anti-migration is good. During the production of the osmium imine, the direct conductivity of the printed circuit board is assured due to its excellent transferability. The printed circuit board of the resin-based adjacent wire is severely caused by the double-layer metal connection of the substrate. In addition, the means can be used for electrical and electronic equipment when they are energized in step circuit boards, and the copper component of the TAB product's circuit expands the surface or inside of the board to form a bridge. There is a short circuit between the roads, causing malfunctions and no problems. Therefore, a substrate that does not easily migrate can be a plate, and the migration resistance is not excellent. Therefore, the polyimide resin 铜 and copper layers still have a double-layer substrate with excellent migration resistance during the chemical conversion process. Therefore, the present inventors have made a method for manufacturing the mobility of a rigid printed wiring board. Before elaborating the present invention, the results of careful research have come to mind. When a flexible printed wiring board is devised, the present invention will be described below. ’In order to easily understand the present invention, the following inventions can greatly improve the resistance

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移現象。目前關於遷移之發 眾說紛紜。參考一般說法, 貼切。 生’機理上並無確切說明,而 本發明人等認為以下理論應較 眾說之中有 路之銅層或施於 本說明書中稱之 為,構成電路之 會有影響,但應 發生乃為上述被 變之大小會有影 促進因素才是。 存在之基材樹脂 銅原子泳動,成 之為「起自微弱 向來,尤以 以内部應變說為 少的銅,形成 熔化去除應變等 成果,但仍無法 ’發生 其表面 為「内 铜層或 不至使 封在内 響或屬 本發明 表面或 為釋放 電流之 撓性印 遷移原 内部應 種種方 完全免Shift phenomenon. Opinions are currently divergent regarding migration. With reference to the general saying, apt. There is no exact explanation on the mechanism of the growth, but the inventors believe that the following theory should be compared with the copper layer that has a way or applied in this specification, which will affect the circuit, but it should happen is the above There are factors that can affect the size. Existing substrate resin copper atomic migration has become "from a weak point, especially copper with less internal strain, forming melts to remove strain and other results, but it still cannot happen that its surface is" inner copper layer or not In order to make the inner ring or the surface of the present invention or the flexible seal that releases the current migrate to the inside, it should be completely free of all kinds of methods.

遷移之難易,取決於被封在構成電 之鍍層内部的應變之大小(以下, 藏應變說」。)。而本發明人等認 施於其表面之鍍層之内藏應變固然 遷移易於發生。亦即認為,遷移之 部的應變能之釋放。此時,内藏應 易知,但仍應須有觸發釋放運作之 人以為’該促進因素即流經無電路 内部之微弱電流,該微弱電流促使 應變之動力(以下,本說明書中稱 内部應變釋放說」。)。 刷線路板,TAB產品等之製造,僅 因,而藉形成銅層時選用内部應變 變少的鍍膜,或事後以熔化處理再 法,雖於抗遷移性之提升獲致一定 除遷移現象。The ease of migration depends on the amount of strain that is enclosed inside the plating that constitutes the electrode (hereafter, Hidden strain theory). However, the present inventors have recognized that the built-in strain of the plating layer on the surface is easy to migrate. That is to say, the release of strain energy in the migrating part. At this time, the built-in should be easy to know, but there must still be someone who triggers the release operation to think that 'the promoting factor is a weak current flowing through the inside of the circuit without a weak current that promotes the force of strain (hereinafter, this specification refers to internal strain Release said. "). The manufacturing of brushed circuit boards, TAB products, etc., simply uses a coating film with reduced internal strain when forming a copper layer, or melt processing afterwards. Although the migration resistance has been improved, migration phenomenon must be eliminated.

因此’本發明係以認同起自微弱電流之内部應變釋放 說為前提,而設法將導致遷移現象,促使銅原子泳動之促 進因素的流經基材樹脂表面或内部之微弱電流限制於最小 者。為限制流經基材樹脂表面或内部之微弱電流(極微弱 之漏電流)於最小,應盡可能提高基材樹脂的表面電阻、Therefore, the present invention is based on the premise of recognizing the internal strain release from a weak current, and seeks to limit the weak current flowing through the surface or inside of the substrate resin that promotes the migration phenomenon and promotes the promotion of copper atomic migration to the minimum. In order to limit the weak current (very weak leakage current) flowing through the surface or inside of the substrate resin to the minimum, the surface resistance of the substrate resin should be increased as much as possible,

2169-5304-PFl(Nl).ptc 第9頁 569656 曰 案號 91132587 五、發明說明(4) 體積電阻。 又’外露於電路與電路間之基材樹脂表面,若有銅等 金屬成分殘留,則因促使漏電流增大,應會助長遷移現 象。因此,殘留在外露於電路與電路間之基材樹脂表面之 金屬成分應盡可能予以去除。基於以上想法,終於想出以 下之本發明。 申請專利範圍乃,「一種撓性印刷線路板之製造方 法’係以使用聚醯亞胺樹脂膜為基材之由撓性銅面層a板 製造撓性印刷線路板之方法,其特徵在於··包括如第一圖 所示之步驟。首先’步驟S1 3係勉刻該撓性銅面層壓板以 形成線路電路之電路蝕刻步驟。繼之,步驟s丨5將電路蝕 刻完之基板,以酸洗處理以去除外露於基板上所形成之線 路的間隙間之聚醯亞胺樹脂膜表面之來自羧酸金屬鹽之殘 留金屬成分以將之轉化為羧基的殘留金屬成分去除步驟。 然後,。步驟S17經殘留金屬成分去除步驟完之基板於 至200 C之高溫氣體環境下加熱處理10分鐘至80分鐘,以 將外露於基板上形成之電路的間隙之聚醯亞胺樹脂膜表面 作閉環處理之再閉環步驟。 解本發明,首先說明以下事項。本說明書中 2 70 17刷線路板」,指銅層與聚醯亞胺樹脂膜層之 =物,而銅層肖聚酿亞胺樹脂膜層@介有它種金屬之阻 防0鐘層者其概念亦涵蓋在内,捲帶自動接合 内片—撓性基板(CGF)等所有產品其概念亦涵蓋在 此所谓「撓性銅面層壓板」亦包含上述撓性 2169-5304-PFl(Nl).ptc 第10頁 569656 __案號91132587__年月日 修正_ 五、發明說明(5) 印刷線路板之所有製造原料。 電路蝕刻步驟中,使用鹼性銅蝕刻液作銅面層壓板之 電路蝕刻,則銅成分蝕刻去除部位,基材之聚醢亞胺樹脂 即露出表面。該外露之基材聚醯亞胺樹脂表面,必然暴露 於蝕刻液。用作銅面層壓板之基材的聚醯亞胺樹脂,全係 具有環狀醯亞胺環之化學結構,暴露於鹼性蝕刻液時,其 醯亞胺環會有開環現象。該開環之發生的佐證,容後詳細 說明於使用直接金屬化法之雙層撓性基板之製造方法,其 中會舉例說明聚醯亞胺樹脂的開環現象。直接金屬化法在 形成種晶層(本說明書中稱為「金屬薄膜」。)之際,聚醯 亞胺樹脂膜難免發生開環。 因此,外露於基板上形成的線路之間隙的基材表面, 若有聚醯亞胺樹脂中醯亞胺環之開環現象,或蝕刻液中所 含金屬離子之存在等所致之開環部羧基與金屬離子產生叛 酸金屬鹽,聚醯亞胺樹脂表面即有金屬成分之殘留。因 而,電路餘刻完之基板藉酸洗處理,去除外露於基板上形 成之線路的間隙之基材樹脂膜表面,來自叛酸金屬鹽之殘 留金屬成分。此於本說明書中稱為殘留金屬成分去除 ”驟。 ’ 如上,自基材表面之羧酸金屬鹽去除金屬成分後,聚 醯亞胺樹脂表面即處於醯亞胺環之開環狀態。直接以該開 環狀態放置時,畢竟易起遷移現象。因而,將殘留金^ 分去除步驟完之基板於丨80 t至2〇〇 t之高溫環境氣體下加 熱處理10至80分鐘,作外露於基板上形成之電路的間隙^2169-5304-PFl (Nl) .ptc page 9 569656 case number 91132587 5. Description of the invention (4) Volume resistance. Also, if metal components such as copper are exposed on the surface of the substrate resin between the circuit and the circuit, the leakage current will increase, which should promote migration. Therefore, metal components remaining on the surface of the substrate resin exposed between the circuits should be removed as much as possible. Based on the above ideas, the following invention has finally been devised. The scope of the patent application is, "A method for manufacturing a flexible printed circuit board" is a method for manufacturing a flexible printed circuit board from a flexible copper surface layer a board using a polyimide resin film as a base material, which is characterized by: · Including the steps shown in the first figure. First, step S1 3 is a circuit etching step of engraving the flexible copper laminate to form a circuit. Then, step s5 and 5 etch the substrate of the circuit to The pickling process removes the residual metal component from the carboxylic acid metal salt on the surface of the polyimide resin film exposed between the gaps of the lines formed on the substrate to convert it to a residual metal component removal step of the carboxyl group. Then, Step S17: After the residual metal component removal step, the substrate is heat-treated in a high-temperature gas environment to 200 C for 10 minutes to 80 minutes, so that the surface of the polyimide resin film exposed on the circuit formed on the substrate is closed-loop processed. Then the closed-loop step. To understand the present invention, the following matters are explained first. In this specification, 2 70 17 brush circuit boards "refers to the copper layer and the polyimide resin film layer, and the copper layer Resin film layer @ Metal resistance and anti-clock layer are also covered. The concept of all products such as the automatic bonding of the inner sheet—flexible substrate (CGF) is also covered in this so-called "flexible copper". The "surface laminate" also includes the above-mentioned flexible 2169-5304-PFl (Nl) .ptc page 10 569656 __Case No. 91132587__ year, month, day, amendment_ V. Description of the invention (5) All manufacturing materials for printed wiring boards. In the circuit etching step, an alkaline copper etchant is used for the circuit etching of the copper-faced laminate, and then the copper component is etched to remove the part, and the polyimide resin of the base material is exposed on the surface. The surface of the exposed base polyimide resin must be exposed to the etchant. Polyimide resins used as the base material of copper-clad laminates all have a chemical structure of a cyclic imine ring. When exposed to an alkaline etching solution, the imine ring may have a ring opening phenomenon. The evidence of the occurrence of the ring opening will be described in detail later in the manufacturing method of the double-layer flexible substrate using the direct metallization method, which will exemplify the ring opening phenomenon of polyimide resin. When the direct metallization method forms a seed layer (referred to as a "metal film" in this specification), the polyimide resin film inevitably undergoes ring opening. Therefore, if the surface of the substrate exposed on the gap of the circuit formed on the substrate has a ring-opening phenomenon of the polyimide ring in the polyimide resin or the presence of metal ions contained in the etching solution, etc. The carboxyl group and metal ions produce a metal salt of acid acid, and the surface of the polyimide resin has a residual metal component. Therefore, the substrate on which the circuit is etched is subjected to acid cleaning to remove the surface of the substrate resin film exposed from the gaps of the lines formed on the substrate, and the residual metal components from the acid metal salt. This is referred to as "removal of residual metal components" in this specification. 'As described above, after the metal component is removed from the carboxylic acid metal salt on the surface of the substrate, the surface of the polyimide resin is in a ring-opened state of the imine ring. After being placed in the open-loop state, migration is easy to occur after all. Therefore, the substrate after the removal of the residual gold ^ is subjected to a heat treatment at a high-temperature ambient gas of 80 to 200 t for 10 to 80 minutes to be exposed on the substrate. Gap formed on the circuit ^

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聚酿亞胺樹脂腔:矣& u 楚丰跡* 、表面的閉環處理。此稱為再閉環步驟。此 專步:::細,亦於下述使用直接金屬化法之雙層撓性基 反之仏法的說明中,以聚醢亞胺樹脂基材為例詳加說 於疋’另一申請專利範圍乃,「一種包括以下S21至 S25/之气驟^的直接金屬化法2〇之撓性印刷線路板之製法, 其係如第二圖所示。直接金屬化法20首先以步驟S21將聚 酿亞胺樹脂膜以驗處理作醯亞胺環之開環處理,於表面形 成綾基之開環步驟。繼之,步驟S2 2將開環形成之羧基以 酸溶液中和之中和步驟。然後,步驟S23使中和之羧基與 含金屬離子之溶液接觸以吸附金屬成分,於聚醢亞胺樹脂 膜表面形成叛酸金屬鹽之金屬離子吸附步驟。繼之,步驟 S24將形成於聚醯亞胺樹脂膜表面之羧酸金屬鹽還原以於 聚醯亞胺樹脂膜表面形成金屬薄膜之金屬薄膜形成步驟。 然後’步驟S25在形成於聚醯亞胺樹脂膜表面之金屬薄膜 上’形成用以經電化學手法所形成電路之銅層的電路用銅 層形成步驟。再將得到之導體層與聚醯亞胺樹脂層構成之 雙層撓性銅面層壓板製造撓性印刷線路板之方法,其首先 餘刻該撓性銅面層壓板所形成線路電路之電路钱刻步驟 (步驟S26 )。繼之,將電路蝕刻完之基板,以酸洗處理 以去除外路於基板上所形成之線路的間隙間之聚酿亞胺樹 脂膜表面之來自羧酸金屬鹽之殘留金屬成分以將之轉化為 羧基的殘留金屬成分去除步驟(步驟S27 )。最後,將經 殘留金屬成分去除步驟完之基板於180 °C至200 °c之高溫氣Poly-imide resin cavity: 矣 & u Chufeng trace *, closed-loop surface treatment. This is called the reclosed step. This special step :: Fine, also described in the following description using the double-layer flexible base of the direct metallization method, and the method of polyimide resin, as an example, added to the scope of another patent That is, "A method for manufacturing a flexible printed wiring board including the direct metallization method 20 of the following S21 to S25 / is described in the second figure. The direct metallization method 20 first gathers the polymer in step S21. The test of the imine resin film is performed as the ring-opening treatment of the sulfonium imine ring to form a ring-opening step on the surface. Next, step S2 2 neutralizes and neutralizes the carboxyl group formed by the ring-opening with an acid solution. In step S23, the neutralized carboxyl group is brought into contact with the metal ion-containing solution to adsorb metal components, and a metal ion adsorption step is formed on the surface of the polyimide resin film. Next, step S24 is formed in the polyimide resin. A metal thin film forming step of reducing the carboxylic acid metal salt on the surface of the amine resin film to form a metal thin film on the surface of the polyimide resin film. Then, step S25 is formed on the metal thin film formed on the surface of the polyimide resin film. Electrochemical method A step of forming a copper layer for a circuit for forming a copper layer of a circuit. A method for manufacturing a flexible printed circuit board by using the obtained double-layer flexible copper surface laminated board composed of the conductor layer and the polyimide resin layer firstly The step of engraving the circuit of the circuit formed by the flexible copper laminate (step S26). Next, the substrate on which the circuit has been etched is treated with pickling to remove the accumulation of gaps in the circuit formed on the substrate by the external circuit. Residual metal component from the carboxylic acid metal salt surface on the surface of the imine resin film to convert it to a carboxyl residual metal component removal step (step S27). Finally, the substrate after the residual metal component removal step is completed at 180 ° C to High temperature of 200 ° c

2169-5304-PFl(Nl).ptc 第12頁 569656 __案號91132587_年月日__ 五、發明說明(7) 體環境下加熱處理1 〇分鐘至8 0分鐘’以將外露於基板上形 成之電路的間隙之聚醯亞胺樹脂膜表面作閉環處理之再閉 環步驟(步驟S28 )。 該撓性印刷線路板之製造方法即係使用,以用所謂直 接金屬化法之導體層及聚醯亞胺樹脂層構成之雙層撓性銅 面層壓板(以上或以下或簡稱「雙層基板」。)的撓性印刷 線路板之製造方法。以下依申請專利範圍中之出現順序說 明各步驟。直接金屬化法,為形成導體層,聚醯亞胺樹脂 膜表面必經開環處理,故採用先前說明之製造方法尤其有 效0 首先說明構成直接金屬化法2〇之步驟S21至步驟S25。 步驟S 2 1係以驗處理聚醯亞胺樹脂膜,作醯亞胺環之開環 處理’於表面形成羧基之開環步驟。此所謂聚醯亞胺樹脂 膜,以使用市售之商品名KAPTON膜(TORAY DUPONT(股)製) 之Η型、EN型者時,本發明之效果明顯 _ UPI LEX S(宇部興產(股)製)等時亦可得相同效果 鹼處理係以將聚醯亞胺樹脂膜浸泡於驗溶液中,或將 驗溶液喷霧於聚醯亞胺樹脂膜表面之手法為之。用於該驗 處理之令液’卩氫氧化鉀溶液或氫氧化鈉溶液為佳。此乃 其後之中和易於進行,表面殘留少之故。 但2169-5304-PFl (Nl) .ptc Page 12 569656 __Case No. 9132587_Year_Month__ V. Description of the invention (7) Heat treatment in a body environment for 10 minutes to 80 minutes' to expose the substrate The step of closing the loop on the surface of the polyimide resin film of the gap formed in the circuit is a closed loop process (step S28). The manufacturing method of the flexible printed wiring board is a double-layer flexible copper surface laminate (above or below or simply referred to as a "double-layer substrate") composed of a conductor layer and a polyimide resin layer called a direct metallization method. ".) Method of manufacturing a flexible printed wiring board. The steps are described below in the order in which they appear in the scope of the patent application. In the direct metallization method, in order to form a conductor layer, the surface of the polyimide resin film must be subjected to a ring-opening treatment. Therefore, the manufacturing method described above is particularly effective. First, the steps S21 to S25 constituting the direct metallization method 20 will be described. Step S 2 1 is a ring-opening step in which a polyfluorene imide resin film is treated as a ring-opening treatment of the fluoreneimine ring to form a carboxyl group on the surface. This so-called polyimide resin film uses the commercially available KAPTON film (made by TORAY DUPONT (stock)) of the Η type and EN type, and the effect of the present invention is obvious _ UPI LEX S (宇 部 兴 产 (股份有限公司) The same effect can be obtained at the same time. The alkali treatment is to immerse the polyimide resin film in the test solution, or spray the test solution on the surface of the polyimide resin film. The liquid used for this test is preferably a potassium hydroxide solution or a sodium hydroxide solution. This is because subsequent neutralization is easy to perform, and there is little surface residue. but

所用鹼溶液濃度高,聚 於短時間内輕易進行。然而 嗣後說明之再閉環步驟乃屬 之程度的開環處理之進行。 醢亞胺樹脂膜之開環處理即可 ’本發明有關之製造方法中, 必要’應無使該閉環處理變難 因此’係以採用鹼溶液濃度3.The concentration of the alkali solution used is high, and the polymerization can be easily performed in a short time. However, the subsequent closed-loop steps described later are performed to the extent that open-loop processing is performed.环 Imine resin film can be ring-opened. ‘In the manufacturing method related to the present invention, it is necessary’ that the ring-closure treatment should not be made difficult. Therefore, an alkali solution concentration of 3.

569656 曰 案號 91132SS7 五、發明說明(8) 〇莫耳/公升至10· 〇莫耳/公升,溶液溫度2 :時,分鐘至1〇分鐘之條件為佳。若以該條件6以u 可驗處理條件則聚酿亞胺樹脂膜裊 ° 亦起#化’會有蜗後再閉環無法順利進行之結果。另一= :二遜於上述範圍之鹼處理條件,開環處 順利進行。 + 3成 是否已經開環之判斷係用傅立葉轉換吸收光謬 ^(ft^ir),觀察閉環之聚醯亞胺樹脂所無之丨以^…之 環醯胺(c=o)吸收,1 554cnfl附近之開環醯胺(N—们吸收,汗 更以醯亞胺環特有之1 774cnrl(c=0),1 720cnrl(c=o)及 Γ其的吸收之消失,即可確認。又,應係來自 叛基(coo)之吸收可於1 579crl、1371crl、i 344cmi附近觀 察到。經鹼處理之聚醯亞胺樹脂膜可觀察到所有此等 譜。 步驟S21 %時,通常即進入經開環處理之聚醯亞胺 脂膜的水洗步驟S22之中和步驟。此即開環而形成羧基, 經強鹼化之聚醯亞胺樹脂表面,用酸溶液中和之步驟。用 於中和之溶液,以鹽酸為佳。中和處理後,充分水洗即可 將聚醯亞胺樹脂表面之殘留物完全去除。在此中和可採 用,鹽酸溶液濃度3· 0莫耳/公升至6· 〇莫耳/公升,溶液溫 度20 °C至35 °C,處理時間1分鐘至2分鐘之條件。中和完= 行水洗處理。 70 該中和完之階段的聚醯亞胺樹脂膜uFT_IR分析,可 確認有1 647cm-1之開環醯胺(C = 0)吸收,i 554cnrl附近之開569656 Case No. 91132SS7 V. Description of the invention (8) The condition of 0 mol / liter to 10.0 mol / liter, and the temperature of the solution is 2 hours, 10 minutes to 10 minutes. If the processing conditions can be checked under these conditions, the polyimide resin film will also be turned into a closed loop, and then the closed loop cannot be performed smoothly. Another =: Second, it is inferior to the alkali treatment conditions in the above range, and the ring opening process proceeds smoothly. The judgment of whether 30% of the ring has been opened is to use Fourier transform to absorb light ^ (ft ^ ir). Observe that the closed-loop polyimide resin does not have 丨 cyclic amine (c = o) absorption, ^ ... 554cnfl near the ring-opening amidine (N-men absorbed, sweat is more specific to the amidine ring 1 774cnrl (c = 0), 1 720cnrl (c = o) and Γ and its absorption disappeared, you can confirm. It should be that the absorption from coo can be observed near 1 579crl, 1371crl, i 344cmi. All these spectra can be observed with alkali treated polyimide resin film. When step S21%, usually enter Neutralization step of water washing step S22 of the ring-opened polyimide resin film. This is the step of ring opening to form a carboxyl group, and the surface of the polyamidoimide resin after strong alkalization is neutralized with an acid solution. The neutralization solution is preferably hydrochloric acid. After the neutralization treatment, sufficient water washing can completely remove the residue on the surface of the polyimide resin. In this neutralization, a hydrochloric acid solution concentration of 3.0 moles / liter to 6.0 mol / L, solution temperature of 20 ° C to 35 ° C, processing time of 1 minute to 2 minutes. After neutralization = washing with water 70. The uFT_IR analysis of the polyfluorene imide resin film at the neutralization stage can confirm the absorption of 1 647cm-1 of cycloamine (C = 0), and the opening near i 554cnrl.

569656 案號 91132587 曰 修正 五、發明說明(9) 環醯胺(Ν-Η)吸收。又,於1 579cm-1、1371cm-1、1 344cm-1 所 見之羧基(COO)之吸收偏移至 1711cm—1、1319cm—1 \ 1 296cnr1 附近,應係因羧基經中和而具有CO OH型之結構。 其次步驟S23係使經中和之羧基與含金屬離子之溶液 接觸,吸附金屬離子於聚醯亞胺樹脂表面形成羧酸金屬 鹽。在此所用的含金屬離子之溶液,例如為以銅離子吸附 時,可用硫酸銅溶液。此時可採用硫酸銅溶液濃度〇 · 〇 1莫 耳/公升至1 · 0莫耳/公升,溶液溫度2〇 °c至50 °C,處理時 間3 0秒至2分鐘之條件。因此,以下係以產生羧酸銅鹽為 例具體說明。此外,使用鎳、鈷時,可維持形成之電路於 高剝離強度。 步驟S23完之階段的聚醯亞胺樹脂膜上金屬離子之吸 附量’係銅而使用上述硫酸銅溶液時,在1〇〇至4〇〇毫克/ 平方米左右。該銅離子吸附量之分析手法係用5重量%之硝 酸溶液溶出吸附之銅離子,其溶液用離子電漿發光分光分 析裝置(I CP)分析。使用鎳、鈷等其它金屬離子時亦同。 、步驟S23中,吸附金屬離子而於聚醯亞胺樹脂膜表面 形成叛酸金屬鹽’水洗後於步驟S24將形成於聚醯亞胺樹 脂膜表面之羧酸金屬鹽還原,於聚醯亞胺樹脂膜表面形成 金屬薄膜。此即金屬薄膜形成步驟。又,重複上述步驟 S23及步驟S24形成厚金属胳 n i屬臈,即可提升聚醯亞胺樹脂膜與 最終得到之導體層的密人择 . β Ό度°此時之還原係使形成有叛酸 金屬鹽之聚醢亞胺樹脂膜表面與還原劑接觸為之。例如, 叛酸銅鹽之還原劑可用如特開2〇〇1_731 59所揭示’濃度〇.569656 Case No. 91132587 Amendment V. Description of the invention (9) Cycloperamide (N-Η) absorption. In addition, the absorption of the carboxyl group (COO) seen at 1 579cm-1, 1371cm-1, and 1 344cm-1 shifted to the vicinity of 1711cm-1, 1319cm-1 \ 1 296cnr1, which should have CO OH because the carboxyl group was neutralized. Structure. In the next step S23, the neutralized carboxyl group is brought into contact with a solution containing metal ions, and the metal ions are adsorbed on the surface of the polyimide resin to form a metal carboxylic acid salt. The metal ion-containing solution used here is, for example, a copper sulfate solution when it is adsorbed by copper ions. At this time, conditions such as a copper sulfate solution concentration of 0.1 mol / liter to 1.0 mol / liter, a solution temperature of 20 ° C to 50 ° C, and a processing time of 30 seconds to 2 minutes can be used. Therefore, the following is a detailed description using copper carboxylate as an example. In addition, when nickel or cobalt is used, the formed circuit can be maintained at a high peel strength. When the adsorption amount of metal ions on the polyimide resin film at the end of step S23 is based on copper, the copper sulfate solution is used at about 100 to 400 mg / m2. The analysis method of the copper ion adsorption amount is to dissolve the adsorbed copper ions with a 5% by weight nitric acid solution, and the solution is analyzed by an ion plasma luminescence spectrometer (I CP). The same applies to other metal ions such as nickel and cobalt. 2. In step S23, metal ions are adsorbed to form a metal acid salt on the surface of the polyimide resin film. After water washing, the carboxylic acid metal salt formed on the surface of the polyimide resin film is reduced in step S24, and the polyimide is formed on the polyimide resin film. A metal thin film is formed on the surface of the resin film. This is the metal thin film forming step. In addition, repeating the above steps S23 and S24 to form a thick metal frame, which can increase the intimacy of the polyimide resin film and the conductor layer finally obtained. Β Ό ° ° The reduction system at this time makes the formation of a betrayal The surface of the polyimide resin film of the acid metal salt is brought into contact with the reducing agent. For example, the reducing agent of copper metaborate can be used at a concentration of 0.1% as disclosed in JP-A-2001-731 59.

2169-5304-PFHNn.Dtc 569656 曰 修正 案號 91132587 五、發明說明(10) 003莫耳/公升至〇.〇5莫耳/公升之 甲胺等。該羧酸金屬鹽之還原劑類、次磷酸、二 殊限制。 〗J &種類任意選用,無特 步驟S24之還原完的階段,以聚醯亞胺 薄膜層為例,可形成80至38〇毫克/ 力曰$、上之鋼 重里厚度之$測,係用如同量測銅離子吸該 所用之ICP裝置分析,換算為每平方米之重量厚度刀析手法 …九原完水洗即成聚醯亞胺樹脂膜表面形成金又屬薄膜 (鋼薄膜)之狀態。該金屬薄膜上,用以利用電化學手J :電,之銅層的生長,即係步驟S25之電路用銅層形乂 層。,I電化學手法」意指以無電解銅鑛層、電解鋼 層、或組合無電解銅鍍層與電解銅鍍層生長銅層增加厚X 得到可形成電路之銅層厚度。在此利之無電解鋼於 冷、,解銅鍍浴之組成,及其餘鍍層條件均無特殊限制。x 至此完成導體層之形成。因此,導體層於銅層之下亦可有 錄、鈷等銅以外之金屬存在。 經以上步驟S21至步驟S25所述之直接金屬化法,得導 體層及聚醯亞胺樹脂層構成之雙層基板。於是,本發明 中’首先步驟S26係作電路蝕刻,係於該雙層基板之銅層 表面形成抗蝕刻層,作電路形狀曝光、顯像、蝕刻,得形 成有線路電路之基板。習知製造方法係於該電路蝕刻完之 階段’水洗、乾燥得產品撓性印刷線路板。 作該電路蝕刻後,外露部位之聚醯亞胺樹脂膜以 FT-IR分析,可確認有165〇cnrl之開環醢胺(〇〇)吸收, naiiHii 第16頁 2169-5304-PFl(Nl).ptc 569656 案號 91132587 五、發明說明(11) 1 547cm—1附近之開環醯胺(N_H)吸收。又,17〇7cnfl及 1 30 8CIT1附近之羧基(C00)之吸收再度出現。 而本發明更包括步驟S27,電路蝕刻完之基板,以酸 洗處理去除外露於基板上形成之線路的間隙之基材樹脂膜 表面’來自羧酸金屬鹽之殘留金屬成分,將之轉化為叛基 的殘留金屬成分去除步驟。並更附帶包括步驟(c),’殘留Α 金屬成分去除步驟完之基板於1 80 t至200 t之高溫環境氣 體下加熱處理10至80分鐘,作外露於基板上形成之電路的 間隙之聚醯亞胺樹脂膜表面的閉環處理之再閉環步驟。 步驟S27之酸洗處理係以使用鹽酸為佳。最終附著之 ^酸成分’充分水洗即可予以完全去除,結果可使聚醯亞 胺表面全無金屬成分殘留。在此以採用鹽酸溶液濃度丨.〇 莫耳/么升至6.0莫耳/公升,溶液溫度室溫,處理時間π 秒至5分鐘之條件為佳。採用該條件以上之過苛酸洗條件 則連形成電路之銅亦受侵蝕,難以維持電 :,遜於上揭範圍之酸洗處理條件下,屬】去J 金屬成分轉化為羧基即無法順利進行。 酸洗處理完之階段外露部位之聚醯亞胺樹脂膜以 FT-IR分析時,可確認有1 649cnfl之開環醯胺= 吸收, ipice附近之開環醯胺(N_H)吸收,17l4cri附 八ϋ基(C〇〇)之吸收出現。於是,更以X線繞射法及波長 二Ϊ ί電子探針微分析(EPMA)二種方法分析有無金屬成分 及附殘留,並無銅成分之檢出,確認酸洗去除之2169-5304-PFHNn.Dtc 569656 Amendment No. 91132587 V. Description of the invention (10) Methylamine from 003 mol / liter to 0.05 mol / liter. The reducing agents, hypophosphorous acid, and dicarboxylic acid of the carboxylic acid metal salt are specifically limited. 〖J & The type is arbitrarily selected, and there is no special step S24 after the reduction is completed. Taking polyimide film layer as an example, it can form 80 to 380 mg / force, and the thickness of the steel is measured. Using the ICP device used to measure the copper ion absorption, the analysis is converted to the weight per square meter. The method of knife analysis ... After Jiuyuan finishes washing with water, the surface of the polyimide resin film forms gold and is a thin film (steel film). . The metal thin film is used for the growth of the copper layer of the electrochemical hand J: electricity, that is, the copper layer-shaped 乂 layer for the circuit of step S25. "I electrochemical method" means that the copper layer is grown by electroless copper ore layer, electrolytic steel layer, or a combination of electroless copper plating and electrolytic copper plating to increase the thickness X to obtain the thickness of the copper layer that can form a circuit. There are no special restrictions on the composition of non-electrolytic steel in cold and copper baths and other plating conditions. x thus completes the formation of the conductor layer. Therefore, the conductor layer can also have metals other than copper such as copper and cobalt under the copper layer. After the direct metallization method described in steps S21 to S25 above, a two-layer substrate composed of a conductor layer and a polyimide resin layer is obtained. Therefore, in the present invention, the first step S26 is circuit etching, and an anti-etching layer is formed on the surface of the copper layer of the double-layer substrate, and the circuit shape is exposed, developed, and etched to form a substrate with circuit circuits. The conventional manufacturing method is at the stage where the circuit is etched, and then washed and dried to obtain a product flexible printed wiring board. After the circuit was etched, the polyimide resin film in the exposed part was analyzed by FT-IR, and it was confirmed that the ring-opened amine (〇〇) absorption of 165 cnrl, naiiHii page 16 2169-5304-PFl (Nl) .ptc 569656 Case No. 91132587 V. Description of the invention (11) Cyclopramidine (N_H) absorption near 1 547cm-1. In addition, the absorption of the carboxyl group (C00) near 1707cnfl and 1 30 8 CIT1 reappeared. The present invention further includes step S27. The substrate after the circuit is etched, and the surface of the substrate resin film exposed on the substrate formed by the gaps of the wiring formed on the substrate is removed by acid pickling to convert the residual metal component from the carboxylic acid metal salt into a rebel Residual metal component removal step. In addition, it includes step (c), 'Residual A metal component removal step. The substrate is heat-treated for 10 to 80 minutes under a high-temperature ambient gas of 1 80 to 200 t to gather the gaps of the circuits formed on the substrate.再 Imine resin film surface closed loop treatment and then closed loop step. The pickling treatment in step S27 is preferably performed using hydrochloric acid. The finally attached ^ acid component 'can be completely removed by washing with water. As a result, the surface of the polyimide can be completely free of metal components. Here, the conditions of using a hydrochloric acid solution concentration of mol / mol to 6.0 mol / liter, a solution temperature of room temperature, and a processing time of π seconds to 5 minutes are preferred. If the pickling conditions above the above conditions are used, even the copper forming the circuit will be eroded and it is difficult to maintain the electricity: Under the pickling treatment conditions that are inferior to the above-disclosed range, the conversion of the metal component to the carboxyl group cannot proceed smoothly . When the polyimide resin film exposed at the stage of pickling treatment is analyzed by FT-IR, it can be confirmed that 1 649cnfl of ring-opened fluorenamine = absorption, and ring-opened fluoramine (N_H) absorption near ipice, 17lcri Absorption of fluorenyl (CO) occurs. Therefore, the X-ray diffraction method and the wavelength two electron probe microanalysis (EPMA) methods were used to analyze the presence of metal components and residuals, and no copper components were detected.

569656569656

Λ___JL 修正 曰 顧 911325S7 五、發明說明(12) 酸洗處理、水洗處理、殘留金屬成分去除步驟完之基 f、進入步驟S28再閉環步驟。該再閉環步驟係,殘留金 屬^分去除步驟完之基板於1 80 °C至200 °C之高溫環境氣體 :4加熱處理10至80分鐘。係藉由加熱,使外露之聚醯亞 胺樹脂膜表面以開環狀態存在之竣基閉環。採用上示條件 以上之過苛條件加熱時,易導致聚醯亞胺樹脂膜本身之變 質,另一方面,遜於所揭範圍之加熱條件下,閉環操作不 充分。 閉環操作完之後,外露部位之聚醯亞胺樹脂膜試以 T—IR分析,有可見於開環聚醯亞胺樹脂膜之1 649CIT1的開 環醯胺(c=o)吸收,1541cnrl附近之開環醯胺(n_h)吸收, 確認全然無nHcr!、1371cnrl&1 344crl的羧基(c〇〇)之吸 收,而可觀察到醯亞胺環特有的1 778cnrl、1 724cnrl& 1 379cm-1之吸收。此即正證明閉環操作已順利進行。 以上製造方法得到之撓性印刷線路板,較之習知相同 產品,具有非常大之表面電阻。以本發明人等確認之姓 為例,以習知直接金屬化法製造,若非經再閉環處理 表面電阻率在2· 5x1 〇ιι歐姆/□以下,體積電阻率在 1 · 8x1 013歐姆·公分以下。相對地,用本發明有關之製 方法得到之撓性印刷線路板,表面電阻率係在! 〇χΐ 〇15 之□值以上,體積電阻率在4·8χΐ〇15歐姆·公分以上的非常 更將該撓性印刷線路板經恆溫恆濕處理(8 5 t /8 5%RH/50小時)後量測表面電阻率及體積電阻率。結果, 2169-5304-PFl(Nl).ptc 第18頁 569656 Λ 案號 91132587 五、發明說明(13) 用習知直接金屬化法製造時,表面電阻率在1. 1x1 〇13歐姆/ □以下,體積電阻率在2· 7x1 〇"歐姆·公分以下,相對 地’用本發明有關之製造方法得到之撓性印刷線路板,表 面電阻率在6·8χ1014歐姆/匚]以上,體積電阻率在14乂1〇15 歐姆.公分以上,仍係非常大之值。因此,由於表面電阻 率及體積電阻率之值大,可預期抗遷移性能之大幅提升。 有關該結果,於以下實施形態中說明。 本說明書中,表面電阻及體積電阻率之量測係使用兩 面有銅層之雙層基板,如下進行。表面電阻係位於基板表 面之電極間的絕緣電阻,體積電阻則係基板之厚度方向設 ,、為1立方公分之立方體時’位於二相對面之電極間的電 =二因此,用於量測之試樣係蝕刻100毫来χ100毫米之雙 ☆其中心形成直徑50毫米之圓形主電極,同時對 :。”間隔10毫米之同心圓形寬10毫米之圓弧電 主電極:圓ίϊΐ著聚醯亞胺樹脂膜的背面,蝕刻製作與 同心之直徑83直徑毫米的對電極。 於背面之對電is = 用t電極及圓沉、電路為電S,形成 體具護極之功能,施加電壓。於是,求出 瓶償电阻羊時,係於主電極盥 電路用作護極量測_ # φ ’I電極間施加電壓,以圓弧 率卜積電阻率’以換算式[體積電阻 菱化學(股)製之古Χ雷H面積]V板厚算出。該量測係用三 二=匕依川κ_之方法為之。 作為構成絕緣層之材料^線路板係用⑽亞胺樹脂膜 之材枓,表面經形成電路者,不僅一般所 2169-5304-PFl(Nl).ptc 第19頁 569656 ___案號 91132587_ 年 月 日 修正 五、發明說明(14) 稱撓性印刷線路板(FPC)產品,亦用以統稱用在液晶顯示 器之驅動器等之捲帶自動接合產品(TAB),晶片撓性基板 (COF )等具撓性的印刷線路板。Λ ___ JL Amendment Gu 911325S7 V. Description of the invention (12) The base of the acid washing treatment, water washing treatment, and residual metal component removal step f. Go to step S28 and close the loop step. In the re-closed loop step, the substrate after the residual metal removal step is removed is heated at a high temperature of 1 80 ° C to 200 ° C for 10 to 80 minutes. By heating, the exposed polyfluoride imide resin film surface exists in a ring-opened closed loop. When heating under the above conditions, the polyimide resin film itself is likely to deteriorate. On the other hand, under the heating conditions below the disclosed range, the closed-loop operation is insufficient. After the closed-loop operation, the polyimide resin film in the exposed part was tested by T-IR analysis. It can be seen in the ring-opened polyimide resin film 1 649CIT1 ring-opened amine (c = o) absorption, near 1541cnrl Ring-opening amidine (n_h) absorption was confirmed to be completely absent from nHcr !, 1371cnrl & 1 344crl carboxyl (c〇〇) absorption, and 1778cnrl, 1 724cnrl & 1 379cm-1, which is unique to amidine ring, was observed. absorb. This is proof that the closed-loop operation has proceeded smoothly. The flexible printed wiring board obtained by the above manufacturing method has a very large surface resistance compared to the conventionally known products. Taking the surname confirmed by the present inventors as an example, it is manufactured by the conventional direct metallization method. If the surface resistivity is not more than 2.5 × 1 〇ιιohm / □ without further closed-loop treatment, the volume resistivity is 1. 8x1 013 ohm · cm. the following. In contrast, the surface resistivity of the flexible printed wiring board obtained by the manufacturing method related to the present invention is in! 〇χΐ 〇15 or more, and volume resistivity of 4 · 8χΐ15 ohm · cm or more. The flexible printed wiring board is subjected to constant temperature and humidity treatment (8 5 t / 8 5% RH / 50 hours) After measuring the surface resistivity and volume resistivity. As a result, 2169-5304-PFl (Nl) .ptc Page 18 569656 Λ Case No. 91132587 V. Description of the invention (13) When manufactured by the conventional direct metallization method, the surface resistivity is 1.1x1 〇13 ohm / □ or less The volume resistivity is lower than 2 · 7x1 〇 " ohm · cm. Relatively, the flexible printed circuit board obtained by the manufacturing method related to the present invention has a surface resistivity of more than 6 · 8 × 1014 ohm / ,. Above 14 乂 1015 ohm.cm, it is still a very large value. Therefore, since the values of surface resistivity and volume resistivity are large, a great improvement in anti-migration performance can be expected. The results will be described in the following embodiments. In this specification, the measurement of surface resistance and volume resistivity is performed using a two-layer substrate with a copper layer on both sides, as follows. The surface resistance is the insulation resistance between the electrodes located on the surface of the substrate, and the volume resistance is set in the thickness direction of the substrate. When the cube is 1 cubic centimeter, the electricity between the electrodes on the two opposite sides = two. Therefore, it is used for measurement. The sample is a pair of etched 100 millimeters to 100 millimeters. The center of the sample forms a circular main electrode with a diameter of 50 millimeters. ”10 mm-spaced concentric circular arc-shaped electric main electrode with a width of 10 mm: The back side of the polyimide resin film is etched to make a counter electrode with a concentric diameter of 83 mm in diameter. The counter current on the back is = Use the t electrode and the round sinker, and the circuit is electric S, to form a body guard function, and apply a voltage. Therefore, when the bottle resistance resistor is obtained, the circuit is connected to the main electrode and used as the guard electrode measurement_ # φ 'I The voltage applied between the electrodes is calculated using the arc rate and the product resistivity 'using the conversion formula [Ancient X Ray H area made by RHI Chemical Co., Ltd.] V plate thickness. This measurement system uses three or two = 依依 川 κ _ The method is. As the material constituting the insulating layer ^ The material of the circuit board is ⑽imine resin film 枓, and the surface is formed with circuits, not only the general 2169-5304-PFl (Nl) .ptc page 19 569656 __ _Case No. 91132587_ Amendment 5 、 Explanation of invention (14) It is called flexible printed circuit board (FPC) products, and it is also used to collectively refer to tape and tape automatic bonding products (TAB) used in liquid crystal display drivers, etc. Flexible printed wiring boards such as substrates (COF).

又’再另一申請專利範圍乃,一種包括以下531至S 35 之步驟的直接金屬化法3 〇之撓性印刷線路板之製法,其如 第二圖所示。首先,步驟S31將聚醯亞胺樹脂膜以鹼處理 作醯亞胺環之開環處理,於表面形成羧基之開環。然後, 步驟S 3 2將開環形成之叛基以酸溶液中和之中和步驟。繼 之,步驟S33使中和之羧基與含金屬離子之溶液接觸以吸 附金屬成为’於聚醯亞胺樹脂膜表面形成叛酸金屬鹽之金 屬離子吸附。然後,步驟S 3 4將形成於聚醢亞胺樹脂膜表 面之羧酸金屬鹽還原以於聚醯亞胺樹脂膜表面形成金屬薄 ,^屬薄膜形成步驟。繼之,步驟S35在形成於聚醯亞 胺樹脂膜表面之金屬薄膜上,形成用以經電化學手法所形 成電路之銅層的電路用銅層形成步驟。Yet another application for a patent is a method for manufacturing a flexible printed wiring board including a direct metallization method 30 including the following steps 531 to S 35, as shown in the second figure. First, in step S31, the polyfluorene imide resin film is subjected to an alkali treatment to perform a ring-opening treatment of the fluorene imine ring to form a ring-opening of a carboxyl group on the surface. Then, step S 3 2 neutralizes the ring-opened alkyl group with an acid solution. Next, in step S33, the neutralized carboxyl group is brought into contact with the metal ion-containing solution to adsorb the metal to become a metal ion adsorber which forms a metal acid salt on the surface of the polyimide resin film. Then, step S 34 reduces the carboxylic acid metal salt formed on the surface of the polyimide resin film to form a metal thin film on the surface of the polyimide resin film, which is a thin film forming step. Next, step S35 is a step of forming a copper layer for a circuit on the metal thin film formed on the surface of the polyimide resin film to form a copper layer for forming a circuit by an electrochemical method.

得到之導體層與聚醯亞胺樹脂層構成之雙層撓性銅面 層壓板製造撓性印刷線路板之方法,其特徵在於包括下述 S 3 6至S 3 9各步驟,該用直接金屬化法得到之撓性銅面層壓 板的預先加熱之預加熱(步驟S36 )。繼之,蝕刻經預加 熱之雙層撓性鋼面層壓板形成線路電路之電路蝕刻(步驟 S37 )。繼之,電路蝕刻完之基板,以酸洗處理以去除外 露於基板上所形成之線路的間隙間之聚醯亞胺樹脂膜表面 之來自羧酸金屬鹽之殘留金屬成分以將之轉化為羧基的殘 留金屬成分去除(步驟S38)。最後,經殘留金屬成分去The method for manufacturing a flexible printed wiring board with the obtained double-layer flexible copper-faced laminate composed of the conductor layer and the polyimide resin layer is characterized in that it includes the following steps S 3 6 to S 3 9 and the direct metal is used. The pre-heating and pre-heating of the flexible copper-faced laminate obtained by the chemical method (step S36). Next, the pre-heated double-layered flexible steel surface laminated board is etched to form a circuit etch of the circuit (step S37). Next, the substrate after the circuit is etched is treated with acid to remove the residual metal component from the carboxylic acid metal salt on the surface of the polyimide resin film exposed between the gaps of the lines formed on the substrate to convert it into a carboxyl group. Residual metal components are removed (step S38). Finally, the residual metal component is removed

569656 索號 91132587 ±_Η 曰 修正 五、發明說明(15) 除步驟完之基板於180 °C至20 0 °C之高溫氣體環境下加熱處 理1 0至8 0分鐘’以將外露於基板上形成之電路的間隙之f 醯亞胺樹脂膜表面作閉環處理之再閉環(步驟S 3 9 )。人 該製造方法與上述的撓性印刷線路板之製造方法幾 所有步驟均相同,惟作電路蝕刻前,包括將用該直接金屬 化法得到之雙層撓性銅面層壓板預先加熱處理之預加熱+ 驟S 3 6係不同處。因此’相同而重複之部份予以省略,僅 就預加熱步驟S36作說明。 設該預加熱步驟,加工成徺性印刷線路板時,無超 300 C之熱衝擊’或在該溫度之環境氣體中不起電路剝° 離。因此,以設預加熱步驟,應可使導體層與聚醯亞胺 脂層之密合性顯著提升,而抗高溫電路剝離之能力提高 該預加熱步驟中,以直接金屬化法得到之雙層基板, 宜於90°C至160°C加熱0.5至4小時左右。偏離上述^溫"度條 件’若加熱不足則不得預加熱效果,無法防止電路剝離, 過度加熱則會促進聚醯亞胺樹脂侧之劣化,難免抗電路剝 離之能力變差。又,預加熱係以採用自室溫緩緩^溫,^ 達目標溫度後保持一定時間之方法為佳。若將雙層基板由 90 °C急遽送入160 °C之環境氣體溫度,即使輕度仍/ 熱衝擊。 例如,作聚醯亞胺樹脂膜之鹼處理使醯亞胺開環形成 羧基,用酸溶液中和,使中和之羧基與含鈷離子之溶液换 觸,於聚醯亞胺樹脂膜表面形成羧酸鈷鹽,將之還原,於 聚醯亞胺樹脂膜表面形成鈷薄膜,於該鈷薄膜上形成用以569656 Cable No. 91132587 ± _Η Revision V. Description of the invention (15) Except the step, the substrate is heat-treated in a high-temperature gas environment at 180 ° C to 20 0 ° C for 10 to 80 minutes to form an exposed substrate. The surface of the circuit gap is closed and then closed-looped (step S 3 9). The manufacturing method is the same as the above-mentioned manufacturing method of the flexible printed wiring board, except that before the circuit etching, the pre-heating of the double-layer flexible copper surface laminate obtained by the direct metallization method is performed in advance. + Step S 3 6 is different. Therefore, the same and repeated portions are omitted, and only the pre-heating step S36 will be described. Assuming this pre-heating step, when processed into a flexible printed wiring board, there is no thermal shock exceeding 300 C 'or the circuit does not peel off in an ambient gas at this temperature. Therefore, with the pre-heating step, the adhesion between the conductor layer and the polyimide layer should be significantly improved, and the ability to resist high temperature circuit peeling should be improved. In this pre-heating step, the double layer obtained by the direct metallization method The substrate should be heated at 90 ° C to 160 ° C for 0.5 to 4 hours. Deviating from the above-mentioned "temperature" conditions, if the heating is insufficient, the pre-heating effect must not be prevented, and the circuit peeling cannot be prevented. The excessive heating will promote the degradation of the polyimide resin side, and the ability to resist circuit peeling will inevitably deteriorate. In addition, the pre-heating method is preferably a method in which the temperature is gradually increased from room temperature and maintained for a certain time after reaching the target temperature. If the double-layer substrate is sent sharply from 90 ° C to an ambient gas temperature of 160 ° C, even mild / thermal shock. For example, alkali treatment of polyimide resin film causes ring opening of fluorene imine to form a carboxyl group, and neutralization with an acid solution causes the neutralized carboxyl group to contact with a solution containing cobalt ion to form on the surface of polyimide resin film. Cobalt carboxylate is reduced to form a cobalt thin film on the surface of the polyimide resin film.

569656 91132fSS7 五、發明說明(16) 曰 修正 利用電化學手法形成電569656 91132fSS7 V. Description of the invention (16): Correction Use of electrochemical methods to form electricity

定預加熱的有I之差里基板’以之用於判 加熱20秒電路即剝離 :二者於350 C t加熱5分鐘亦無電路剝離f。也⑻乂預加熱者即使於㈣ : ίΓ?線路板者,隨其用途有時會施以種種 ^ β〒吊見之端子鍍層之鍍錫,多層籍The pre-heated substrate with a difference of I is used to judge that the circuit is peeled when heated for 20 seconds: the two are heated at 350 Ct for 5 minutes without circuit peeling f. Even those who are pre-heated even if they are: ΓΓ? Circuit boards, depending on their use, may be applied with a variety of ^ β〒 hanging terminal plating of tin plating, multi-layered

性印:m:板之層間導通鑛銅等。此外”遺:途:有層鍵撓錄 之採用。因此,本說明書中所謂鍍層處理步驟,不限於: 殊種類之鍍層。如此之鍍層處理亦有於電路蝕刻完後施行 者。以如上之本發明有關製造方法作為基本流程時,於撓 性印刷線路板製造方法之電路蝕刻完後,於任意階段施以 該鍍層處理,亦可良好維持抗遷移性。 因而,申請專利範圍有基於上述三撓性印刷線路板製 造方法的具有鍍層之撓性印刷線路板之製造方法,其係於 電路蝕刻步驟後任意階段施以鍍層處理之具有鍵層的挽性 印刷線路板之製造方法。 具體而言,設有如下之鍍層處理步驟。首先,本發明 基本上係’以聚醢亞胺樹脂膜為基材之挽性銅面層壓板製 造撓性印刷線路板時’經(a) I虫刻該撓性銅面層麼板形成 線路電路之電路蝕刻步驟,(b)電路蝕刻完之基板,以酸 洗處理去除外露於基板上形成之線路的間隙之基材樹脂膜 表面,來自羧酸金屬鹽之殘留金屬成分,將之轉化為缓基 的殘留金屬成分去除步驟,(c)殘留金屬成分去除步驟完 之基板於180 °C至200 C之南溫氣體環境下加熱處理1〇至8〇Seal: m: interlayer conductive copper and other layers. In addition, "Left: Path: the use of layer key scratch recording. Therefore, the so-called plating treatment steps in this specification are not limited to: special types of plating. Such plating treatments are also performed after the circuit is etched. The same as the above When the manufacturing method of the invention is used as the basic flow, after the circuit of the flexible printed wiring board manufacturing method is etched, the plating treatment can be applied at any stage, and the migration resistance can be maintained well. Therefore, the scope of the patent application is based on the above three flexures. A method for manufacturing a flexible printed circuit board with a plated layer, which is a method for manufacturing a flexible printed circuit board, is a method for manufacturing a printed circuit board with a key layer that is plated at any stage after the circuit etching step. Specifically, The following plating treatment steps are provided. First, the present invention is basically "when manufacturing a flexible printed wiring board with a polyimide resin film-based copper-clad laminate" by (a) I engraving the scratch Circuit etching step of forming a circuit with a copper surface layer to form a circuit, (b) the substrate after the circuit is etched, and the circuit exposed on the substrate is removed by pickling. Gap of the substrate resin film, the residual metal component from the carboxylic acid metal salt is converted into a residual metal component removal step of the buffer group. (C) The substrate after the residual metal component removal step is at 180 ° C to 200 C. Heat treatment in the south temperature gas environment 10 to 8

2l69-5304-PFl(Nl).ptc 第22頁 569656 修正 曰 案號 91132587 五、發明說明(17) ,作外露於基板上形成之電路的間隙之聚醯亞胺樹脂 =面的閉環處理之再閉環步驟,製造撓性印刷線路板。 八此,鍍層處理步驟可設於電路蝕刻步驟與殘留金屬成 二士除步驟之間。或’設於殘留金屬成分去除步驟與再閉 衣步驟之間。亦可設於再閉環步驟完後。 ;n;其-人考察,使用上述直接金屬化法得到之導體層及聚 2胺樹脂層構成的雙層撓性鋼面層壓板,經⑷蝕刻該 ^層撓性銅面層壓板形成線路電路之電路蝕刻步驟,(b) ,路餘刻完之基板’以酸洗處^除外露於基板上形成之 思路的間隙之基材樹脂膜表面,來自羧酸金屬鹽之殘留金 =成分,將之轉化為羧基的殘留金屬成分去除步驟,(c) ^:二除步驟完之基板於⑽㈣㈣之高溫氣 體裱浼下加熱處理10至80分鐘,作外露於基板上形成之電 路的間隙之聚酿亞胺樹脂膜表面的閉環處理之再閉環步 驟,製造撓性印刷線路板時鍍層處理步驟之配置。此時, =同上述者,鍍層處理步驟可設於電路蝕刻步驟與留 f成^去除步驟之間。或,設於殘留金屬成分去除步驟與 再閉ί哀步驟之間。亦可設於再閉環步驟完後。 、 又再考察,使用上述直接金屬化法得到之導體層 醯亞胺樹脂層構成的雙層撓性銅面層壓板,經(a)該用畫 接金屬化法得到之撓性鋼面層壓板的預先加熱之預加埶 驟’⑻蝕刻經預加熱之雙層#性銅面層壓板形成線路電 路之電路蝕刻步驟,(c)電路蝕刻完之基板,以酸洗 去除外露於基板上形成之線路的間隙之基材樹脂膜表面, Η 第23頁 2l69-5304-PFl(Nl).ptc 569656 案號 911325872l69-5304-PFl (Nl) .ptc Page 22 569656 Revised case number 91132587 V. Description of the invention (17), the polyimide resin used as the gap of the circuit formed on the substrate is exposed to the closed-loop treatment of the surface Closed-loop steps to manufacture flexible printed wiring boards. In this case, the plating process step may be provided between the circuit etching step and the step of removing the residual metal by two steps. Or, 'is provided between the step of removing the residual metal component and the step of re-closing. It can also be set after the re-closed loop step is completed. ; n; its-person's inspection, using the above-mentioned direct metallization method to obtain the double-layer flexible steel surface laminate composed of the conductor layer and the poly 2 amine resin layer, and then etching the ^ layer of the flexible copper surface laminate to form a circuit The circuit etching step, (b), the substrate after the road is etched with a pickling place ^ except for the surface of the substrate resin film exposed in the gap formed on the substrate, the residual gold from the carboxylic acid metal salt = component, (C) ^: Removal step of residual metal component converted to carboxyl group, (c) ^: After the second removal step, the substrate is heat-treated under a high-temperature gas frame for 10 to 80 minutes, and is used to aggregate the gaps of the circuits formed on the substrate. The closed-loop process of the closed-loop process of the surface of the imine resin film, and the configuration of the plating process step when manufacturing a flexible printed circuit board. At this time, the same as the above, the plating process step may be set between the circuit etching step and the remaining step of removing. Or, it is provided between the step of removing the residual metal component and the step of re-closing. It can also be set after the re-closed loop step is completed. Let's examine again. Using the conductor layer and imine resin layer obtained from the direct metallization method described above, a two-layer flexible copper-faced laminate made of the above-mentioned direct metallization method is used. The pre-heated pre-addition step is used to etch the pre-heated double-layered copper-clad laminate to form a circuit circuit. (C) The substrate after the circuit is etched, and the exposed substrate is removed by pickling. The surface of the substrate resin film of the gap of the circuit, 23 p.23 2l69-5304-PFl (Nl) .ptc 569656 case number 91132587

五、發明說明(18) 來自羧酸金屬鹽之殘留金屬成分 金屬成分去除步驟,(d)殘留金屬&、 化為羧基的殘留 作外露於基板上形成之電路理10至8。分鐘’ 的ρ卩俨考碰夕直μ俨丰獅 門隙之1酿亞胺樹脂膜表面 的閉裱處理之再閉ί哀步驟,盤j ;生枝& π 王?牛踯夕献番.ni ^ 表化挽性印刷線路板時鍍層處 j步驟之配置。此時’如同上述者 電路蝕刻步驟與殘留金屬成分丰 处,诹了。又於 两从刀专除步驟之間。或, 留金屬成分去除步驟與再閉環+驟 、 步驟完後。 閉%步驟之間。亦可設於再閉環 成 性 移 採用上述鍍層處 分去除步驟及再閉 。然而,嚴格說來 性有很大影響。以 理步驟之任一配置 環步驟時,可得格 ’鍍層處理步驟之 下加以說明。 ,比不含殘留金屬 外優良之抗遷移 配置處所,對抗遷 鍍層步驟之最適配置,係將鍍層處理步驟設於電路蝕 刻步驟與殘留金屬成分去除步驟之間。採用該鍍層步驟配 置時,其後即配有殘留金屬成分去除步驟,外露於經電路 餘刻形成之電路的間隙之聚醯亞胺樹脂膜表面,可幾無鑛 液金屬成分之殘留。結果,可得最優之抗遷移性能。 其次係以將鍍層處理步驟設於再閉環步驟完後。亦 即’再閉環步驟完因係指外露於以電路蝕刻形成之電路的 間隙之聚醯亞胺樹脂膜的醯亞胺環已閉環,鍍液金屬成分 即難以殘留於該聚醯亞胺樹脂膜表面。 與上二配置相比,將鍍層處理步驟設於殘留金屬成分 去除步驟與再閉環步驟之間時,抗遷移性之改善效果最V. Explanation of the invention (18) Residual metal component from metal carboxylic acid metal salt Step of metal component removal, (d) Residual metal & residue converted into carboxyl group 10 to 8 for circuit formation formed on the substrate. The test of the minute ’s 碰 卩 俨 碰 夕 夕 俨 俨 俨 俨 狮 俨 狮 狮 门 隙 隙 隙 酿 酿 酿 酿 酿 酿 酿 酿 酿 酿 酿 酿 裱 裱 裱 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤;;; 生 枝 amp amp King? Niu Xixi Xianfan.ni ^ The configuration of step j at the plating layer when expressing the printed circuit board. At this point, 'as mentioned above, the circuit etching step and the residual metal component are rich, and it is gone. And between the two knife removal steps. Or, the remaining metal component removing step and the re-closed loop + step are completed. Close% steps between. It can also be set at the re-closed loop. The above-mentioned coating removal step and re-closed are used. However, strictly speaking, sex has a great impact. When any of the logical steps is configured as a ring step, it can be described below the plating step. It has a better anti-migration configuration than the absence of residual metal. The optimal configuration for anti-migration coating step is to set the plating treatment step between the circuit etching step and the residual metal component removal step. When using this plating step configuration, a residual metal component removal step is subsequently provided, and the surface of the polyimide resin film exposed on the gap formed by the circuit at the moment of the circuit can be almost free of residual liquid metal components. As a result, optimum anti-migration performance can be obtained. The second step is to set the plating process step after the re-closed loop step. That is, the completion of the "re-closing step" means that the polyimide ring of the polyimide resin film exposed in the gap formed by the circuit etching is closed, and the metal component of the plating solution is difficult to remain in the polyimide resin film. surface. Compared with the previous two configurations, when the plating treatment step is set between the residual metal component removal step and the re-closed-loop step, the migration resistance improvement effect is the most effective.

2169-5304-PFl(Nl).ptc 第24頁 569656 __案號91132587 车月日 修正_ 五、發明說明(19) 小。亦即,殘留金屬成分去除步驟完之時點,外露於以電 路姓刻形成之電路的間隙之聚醯亞胺樹脂膜的醯亞胺環係 處於開環狀態。因此,若之後隨即施以鑛層處理,則因已 開環之醯亞胺環的存在,該聚醯亞胺樹脂膜表面易有鍍液 金屬成分殘留。於是,若就此直接進入再閉環步驟,則外 露於電路間隙之聚醯亞胺樹脂膜表面金屬成分殘留之可能 性變高’抗遷移性之改善效果變小。而,為免誤解再次強 調’即使將鍵層處理步驟設於殘留金屬成分去除步驟與再 閉環步驟之間,與上二配置相比,抗遷移性之改善效果雖 小,依然可確保較之習知產品更高的抗遷移性。 實施方式 以下,利用使用本發明有關之製造方法製造撓性印刷 線路板之實施形態,更詳細說明本發明。 第一實施形態: 本實施形態呈 以所謂直接金屬化 雙層基板,用該雙 在此係於該聚醢亞 造。並且更呈不遷 首先該聚醯亞 行形成羧基於表面 膜係商品名KAPTON 鹼處理係於氫 法製造由銅層及聚醯亞胺樹脂層構成之 1基板製造撓性印刷線路板之結果。而 胺樹脂膜兩面有銅層的雙層基板制 移,驗之結果。以下依序;;:二 胺樹脂膜以鹼處理使醯亞胺環開環,進 之開環步驟。在此所用之聚醯亞胺樹脂 2〇〇H(T〇RAY DUPGNT(股)製)。 氧化鉀濃度5.0莫耳/公升,溫㈣。^2169-5304-PFl (Nl) .ptc Page 24 569656 __Case No. 91132587 Car Moon Day Amendment_ V. Description of the invention (19) Small. That is, at the time when the residual metal component removing step is completed, the polyimide ring system of the polyimide resin film exposed in the gap of the circuit formed by the circuit name is in a ring-opened state. Therefore, if a ore layer treatment is applied immediately thereafter, the surface of the polyfluorene imide resin film is liable to leave metal components of the plating solution due to the presence of the ring-opened fluorene imine ring. Therefore, if the step of directly entering the re-closed loop is performed directly, the possibility of the metal component remaining on the surface of the polyimide resin film exposed from the circuit gap becomes higher, and the effect of improving the migration resistance becomes smaller. However, in order to avoid misunderstanding, it is emphasized again that even if the key layer processing step is set between the residual metal component removal step and the re-closed loop step, compared with the previous two configurations, although the improvement effect of the migration resistance is small, it can still ensure that it is better than the conventional one. Know the product's higher resistance to migration. Embodiments Hereinafter, the present invention will be described in more detail by using an embodiment in which a flexible printed wiring board is manufactured using the manufacturing method according to the present invention. First Embodiment: This embodiment adopts a so-called direct metallization double-layer substrate, and the double-layered substrate is used here. And it is still the same. First, the polyfluorene ADB formed a carboxyl group on the surface. The film was sold under the brand name KAPTON. The alkali treatment was based on the hydrogen method to produce a flexible printed circuit board made of a copper layer and a polyimide resin layer. The double-layer substrate with copper layers on both sides of the amine resin film was transferred and the results were verified. The following sequence is ;;: The diamine resin film is alkali-treated to ring-open the imine ring, and then the ring-opening step is performed. Polyimide resin 200H (made by TORAY DUPGNT (stock)) used here. Potassium oxide concentration is 5.0 mol / L, warm. ^

2169-5304-PFl(Nl).ptc 第25頁 569656 修正 案號 911325S7 五、發明說明(20) ,液中浸泡5分鐘。鹼處理完時,充分水洗。自聚醯亞胺 樹脂膜表面去除附著之氫氧化鉀溶液。 ^ f判斷是否已開環之FT—IR分析,觀察到閉環之聚醯 亞胺樹脂所無之1 647CHT1之開環醯胺(〇0)吸收,1 554CIT1 附近之開環醯胺(N-H)吸收,更以醯亞胺環之特有 1 774cnfl(C = 0),HZOcnrKOO)及lMlcm-KC-N-C)之吸收的 消失’可予確認。又,於1 579cnrl、1371cnrl、1 344cnrl 附 近可觀察到應係來自羧基(c〇〇)之吸收。 其次’開環步驟完,經水洗之聚醯亞胺樹脂膜以中和 步驟作處理。係將開環而形成羧基,經強鹼化之聚醯亞胺 樹脂膜’浸泡於酸溶液中加以中和。在此用於中和之溶液 係鹽酸溶液’並採用該鹽酸溶液濃度6· 〇莫耳/公升,溶液 溫度2 5 °C ’處理時間1分鐘之條件。然後中和完後作水洗 處理。 於該中和完之階段以FT-IR分析聚醯亞胺樹脂膜,可 確認有1 647cm-1之開環醢胺(C = 0)吸收,i 554cm-i附近之開 環醯胺(N-H)吸收。又,於1 579cm-i、1371cm-i、1 344cnfl 所 見之羧基(C00)之吸收已偏移至i7iicm-i '1319CIT1、 1 29 6cm_1 附近。 中和步驟完時,於銅吸附步驟,使聚醯亞胺樹脂膜之 經中和的羧基與含銅溶液接觸,以銅離子吸附於羧基,於 聚醯亞胺樹脂膜之兩面形成羧酸銅鹽。在此所用之含銅溶 液,係銅濃度0· 05莫耳/公升,溶液溫度25 °C之硫酸銅溶 液’於該溶液浸泡1分鐘。然後水洗,去除殘留於聚醯亞2169-5304-PFl (Nl) .ptc Page 25 569656 Amendment No. 911325S7 5. Description of the invention (20), soak in the liquid for 5 minutes. When the alkali treatment is completed, wash with water. The attached potassium hydroxide solution was removed from the surface of the polyimide resin film. ^ FT-IR analysis to determine whether the ring-opened polyimide resin has observed 1-647CHT1 ring-opened amine (〇0) absorption, and 1 554CIT1 near ring-opened amine (NH) absorption The disappearance of the absorption of the specific imine ring 1774cnfl (C = 0), HZOcnrKOO) and 1Mlcm-KC-NC) can be confirmed. In addition, absorption near the carboxyl group (co) was observed in the vicinity of 1,579cnrl, 1371cnrl, and 1344cnrl. Next, after the 'ring-opening step is completed, the washed polyimide resin film is treated with a neutralization step. The ring is opened to form a carboxyl group, and the strongly alkaline polyimide resin film 'is immersed in an acid solution to be neutralized. The solution used for the neutralization was a hydrochloric acid solution ', and the conditions were that the concentration of the hydrochloric acid solution was 6.0 mol / liter, and the solution temperature was 25 ° C. The treatment time was 1 minute. After neutralization, wash with water. At the completion of this neutralization phase, the polyimide resin film was analyzed by FT-IR, and it was confirmed that the ring-opened fluoramine (C = 0) absorption of 1 647 cm-1, and the ring-opened fluoramine (NH near 554 cm-i) (NH )absorb. In addition, the absorption of the carboxyl group (C00) seen at 1 579cm-i, 1371cm-i, and 1 344cnfl has shifted to the vicinity of i7iicm-i '1319CIT1, 1 29 6cm_1. When the neutralization step is completed, in the copper adsorption step, the neutralized carboxyl group of the polyimide resin film is brought into contact with the copper-containing solution, and the copper ions are adsorbed to the carboxyl group to form copper carboxylate on both sides of the polyimide resin film. salt. The copper-containing solution used here was a copper sulfate solution 'having a copper concentration of 0.05 mol / liter and a solution temperature of 25 ° C, and immersed in the solution for 1 minute. Then wash with water to remove the residue

2169-5304-PFl(Nl).ptc 第26頁 569656 案號 HIj2587_ 五、發明說明(21) 胺樹脂膜表面之硫酸鋼溶液。 隨後,於銅膜形成步驟,收^认 ¥ π # $ =战驟將銅離子吸附步驟中形成於 5^醢亞胺樹月曰膜表面之_酿細豳 π ^ & π # ^ ^ 銅鹽予以還原,於聚醯亞胺樹 月日膜表面形成銅薄膜。太眚妳 ^ ^ ^ ^ ^ 丰實鉍形態之還原係將形成羧酸銅 鹽之^^醢亞胺树脂膜於遣庚η π >跏# π如、々ν + 度· 〇1莫耳/公升,溶液溫度25 C之删虱化納溶液中浸泊^八於 ^ ^ ,,, 一 :次/包5刀知’與還原劑接觸而進行。 一後水洗’去除附耆於表面之還原劑。 本實施形態中,以鋼籬早成似此 /5霧客4、隹—έ士里 ^ 子及附步驟及銅薄膜形成步驟 ΪΓ 丁。 後銅離子吸附步驟完之階段,吸 附於聚醯亞胺樹脂膜上之鋼離子總量達22〇〇毫 米,最終在銅薄膜形成步驟^ ^+ 脂膜45上即可形成154。毫二還方原乎二皆二’聚酿亞胺樹 41 (參見第四圖)。克千方未重S厚度之鋼薄膜層 」後於電路用銅層形成步驟,將銅薄膜形成步驟中 形成銅薄膜之聚醯亞胺樹脂膜表面,用電解法電著銅成 分,電鍍追加銅薄膜至9微米厚之銅層。在此用於電解之 溶液係硫酸濃度150克/公升,銅65克/公升,液溫45它之 硫酸銅溶液,對極係配置不溶性陽極DSE板,以電流密度3 安培/平方公寸之緩和電鍍條件電解丨6分鐘。電鍍追加 完’充分水洗,去除附著之硫酸銅溶液。 藉以上之直接金屬化法,即得到銅層與聚醯亞胺樹脂 層直接貼合之狀態下,兩面有銅層之雙層基板。然後於該 雙層基板之銅層表面形成蝕刻阻劑層,以曝光、顯像、蝕 刻進行形成上述電阻量測用試樣及抗遷移性量測試樣的電2169-5304-PFl (Nl) .ptc Page 26 569656 Case No. HIj2587_ V. Description of the invention (21) A sulfuric acid steel solution on the surface of an amine resin film. Subsequently, in the copper film formation step, ^ ¥ π # $ = = copper ions formed on the surface of the 5 ^ imine tree in the step of adsorption _ brewing fine π ^ & π # ^ ^ copper The salt is reduced to form a copper thin film on the surface of the polyimide tree. Too much you ^ ^ ^ ^ ^ The reduction of the rich bismuth form will form a ^^ imine resin film of copper carboxylate salt η π > 跏 # π such as, 々ν + degree · 〇1 Mo Er / L, solution temperature 25 C immersed in a solution of lice 化 纳 ^ ^ ^ ^ ^ ^ ,,, a: times / pack 5 knives know 'in contact with the reducing agent. After that, it is washed with water 'to remove the reducing agent attached to the surface. In this embodiment, a steel fence is formed as early as this. / 5 Mist 4, 隹 —έ 士 里 ^ and attached steps and copper film formation steps 形成 Γ 丁. At the stage after the completion of the copper ion adsorption step, the total amount of steel ions adsorbed on the polyimide resin film reached 22,000 millimeters, and finally 154 can be formed on the copper film formation step ^ ^ + lipid film 45. The milli-reduced formula is almost dimer-dimeric polyimide tree 41 (see figure 4). The steel thin film layer with a thickness of 1,000 grams without weight S ”is then formed in the copper layer for the circuit, and the polyimide resin film surface of the copper thin film formed in the copper thin film forming step is electroplated with a copper component by electrolytic method, and additional copper is electroplated Thin film to 9 micron thick copper layer. The solution used for electrolysis here is a solution of copper sulfate with a sulfuric acid concentration of 150 g / liter, copper 65 g / liter, and a liquid temperature of 45, and an insoluble anode DSE board for the pole system. The current density is 3 amps / square inch. Electroplating conditions Electrolysis 丨 6 minutes. After the plating is added, it is sufficiently washed with water to remove the attached copper sulfate solution. By the above direct metallization method, a double-layer substrate having a copper layer on both sides in a state where the copper layer and the polyimide resin layer are directly bonded is obtained. Then, an etching resist layer is formed on the surface of the copper layer of the double-layer substrate, and the electrical resistance for forming the above-mentioned resistance measurement sample and anti-migration amount test sample is formed by exposure, development, and etching.

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案號 91132587 路之蝕刻步驟 進行蝕刻步驟後,外露之聚醯亞胺樹脂膜以FT—丨R分 析,可確認有1 650cm-1之開環醯胺(C = 0)吸收,i 547cirl附 近之開環醯胺(N-H)吸收,1 707C1T1及1 308CIT1附近之幾基 (COO)之吸收再度出現。 & 電路蝕刻完之基板於其次之殘留金屬成分去除步驟 中,以酸洗處理去除外露於基板上形成之線路的間隙之聚 醯亞胺樹脂膜表面,來自羧酸銅鹽之殘留銅成分,將之轉 化為敗基。在此所作之酸洗處理係用濃度2· 〇莫耳/公升之 鹽酸溶液,溶液溫度為室溫,將電路蝕刻完之基板浸泡5 分鐘。然後水洗,去除附著之鹽酸成分。 以該電路蝕刻製造之電阻量測用試樣亦如上述,其說 明予以省略以免重複。另一方面,抗遷移量測試樣係電路 寬5 0微米’電路間隙7 〇微米之梳形圖型,電路數丨〇 〇,其 形狀係排列之電路可交互作正極與負極之導通。 、 殘留金屬成分去除步驟完之階段,外露部位之聚醯亞 胺樹脂膜試以FT-IR分析,可確認丨649cm—1的開環醯胺 (00)之吸收,1541cm-1附近之開環醯胺(N — H)之吸收,而Case No. 91132587 After the etching step, the exposed polyimide resin film was analyzed by FT— 丨 R, and it was confirmed that the ring-opened amine (C = 0) absorption of 1 650cm-1, i 547cirl near Ring-opening ammonium (NH) absorption, absorption of several bases (COO) near 1 707C1T1 and 1 308CIT1 reappeared. & In the next remaining metal component removal step of the circuit-etched substrate, the surface of the polyimide resin film exposed from the gaps of the lines formed on the substrate is removed by pickling, and the residual copper component from the copper carboxylate is removed. Turn it into a losing ground. The pickling treatment performed here was performed by immersing the circuit-etched substrate for 5 minutes with a hydrochloric acid solution at a concentration of 2.0 mol / liter. It was then washed with water to remove the attached hydrochloric acid component. The resistance measurement sample produced by the etching of the circuit is also the same as above, and its description is omitted to avoid repetition. On the other hand, the anti-migration test sample circuit is a comb pattern with a width of 50 microns and a circuit gap of 70 microns. The number of circuits is such that the circuits arranged in the shape can interact with the positive and negative electrodes. At the stage of removing the residual metal components, the polyimide resin film of the exposed part was analyzed by FT-IR, and it can be confirmed that the absorption of 649cm-1 ring-opened ammonium (00) and the ring opened near 1541cm-1 Amine (N-H) absorption, and

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71 4cm 1及1 298^11-1附近有緩基(c〇〇)之吸收出現。然後以X 線繞射法及波長分散型電子探針微分析(EPMA)二種方法分 析有無金屬成分吸附殘留,無法檢出銅成分及其它金屬成 分’確認酸洗去除已切實進行。 然後’對殘留金屬成分去除步驟完之基板,於再閉環 步驟進行閉環操作。該再閉環步驟中係將殘留金屬成分去 569656 ____案號91132587_年月 R 冑正____ 五、發明說明(23) 除步驟完之基板’於1 8 0 °C之高溫環境氣體下作加熱處理 60分鐘,使於無電路圖型存在,外露之聚醯亞胺樹脂膜表 面以開環狀態存在之羧基閉環。 試以F T - I R分析作外露部位之聚醢亞胺樹脂膜的閉環 之確認,則可見於開環聚醯亞胺樹脂膜之1 649cnr1的開環 醯胺(C = 0)吸收,1541cm-1附近之開環醯胺(N_H)吸收, 1714cm-1、1371cm-1及1 3 44cm-1的羧基(c〇〇)之吸收全然無法 確認,而可觀察到醢亞胺環特有的1 7 7 8 c nr1、1 7 2 4 c m-1及 1 379cm-1之吸收。因此證明閉環操作已順利進行。 利用藉以上製造方法得到之電阻量測用試樣量測電 阻。結果,表面電阻率為1.0x1 〇15歐姆/□,體積電阻率在 4 · 8 X1 015歐姆·公分。又,量測恆溫恆濕處理(8 5 °C /85%RH/50小時)後之表面電阻率及體積電阻率。結果,表 面電阻率為6·8χ1014歐姆/□,體積電阻率丨·4χι〇ΐ5歐姆· 公分。而抗遷移試驗係於溫度85 °C,溼度85%之恆溫怪濕 槽内’利用上述抗遷移試驗用試樣,施加6 〇伏特之電壓, 測出產生漏電流所需之時間。結果,產生漏電流所需時間 在1 0 0 0小時以上。至於南溫電路剝離防止能力,係用抗遷 移試驗用試樣,僅於350 °C溫度之環境氣體下暴露2〇秒, 已觀察到電路之剝離。 第二實施形態: 本實施形態呈示’如同第一實施形態,使用5 0微米厚 之聚醯亞胺樹脂膜,以所謂直接金屬化法製造由銅層及聚 醯亞胺樹脂層構成之雙層基板,用該雙層基板製造撓性印71 4cm 1 and 1 298 ^ 11-1 near the absorption of the slow base (c〇〇) appeared. Then X-ray diffraction method and wavelength-dispersed electronic probe microanalysis (EPMA) were used to analyze the presence or absence of adsorption of metal components, and copper components and other metal components could not be detected 'to confirm that the pickling removal had been carried out. Then, the closed-loop operation is performed on the substrate after the residual metal component removing step is completed. In this re-closed loop step, the residual metal components are removed to 569656 ____ Case No. 91132587_ Month R 胄 ____ V. Description of the invention (23) The substrate after the step is removed is made under a high temperature ambient gas of 180 ° C Heat treatment for 60 minutes, in the presence of no circuit pattern, exposed carboxyl ring on the surface of the polyimide resin film in a ring-open state. FT-IR analysis was used to confirm the closed loop of the polyimide resin film in the exposed part. It can be seen in the ring-opened polyimide resin film 1 649cnr1 ring-opened amine (C = 0) absorption, 1541cm-1 Nearby ring-opened amidine (N_H) absorption, the absorption of carboxyl groups (c〇〇) at 1714cm-1, 1371cm-1, and 1 3 44cm-1 could not be confirmed at all, but the unique 1 7 7 8 c nr1, 1 7 2 4 c m-1 and 1 379 cm-1. Therefore, it proves that the closed-loop operation has proceeded smoothly. Measure the resistance using the sample for resistance measurement obtained by the above manufacturing method. As a result, the surface resistivity was 1.0 × 10 15 ohm / □, and the volume resistivity was 4 · 8 × 1 015 ohm · cm. In addition, the surface resistivity and volume resistivity after constant temperature and humidity treatment (85 ° C / 85% RH / 50 hours) were measured. As a result, the surface resistivity was 6.8 × 1014 ohm / □, and the volume resistivity was 丨 4 × 5 ohm · cm. The anti-migration test was performed in a thermostatically-wet tank with a temperature of 85 ° C and a humidity of 85%. Using the above-mentioned sample for the anti-migration test, a voltage of 60 volts was applied to measure the time required to generate a leakage current. As a result, the time required for generating the leakage current is more than 1,000 hours. As for the NanWen circuit peeling prevention ability, a sample for resistance to migration test was used, which was exposed to an ambient gas at a temperature of 350 ° C for 20 seconds, and peeling of the circuit was observed. Second Embodiment: This embodiment shows' like the first embodiment, using a 50 micron thick polyimide resin film, the so-called direct metallization method is used to produce a double layer composed of a copper layer and a polyimide resin layer. Substrate, and using this double-layer substrate to make a flexible print

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五、發明說明(24) 刷線路板之結果。但不同之處僅在此係於製造完雙層基 5 \ 1乍f路餘刻前設有預加熱步驟。因此,製程與第一實 施形態幾乎相同,重複部份之說明予以省略,僅就預加熱 步驟作說明。 以如同第一實施形態之直接金屬化法,得到銅層與聚 酿亞胺樹脂層直接貼合之狀態下,兩面有銅層之雙層基 板。然後該雙層基板於乾燥狀態下送入加熱爐内,作預加 熱處理。此時之環境氣體溫度係由室溫以1 〇 °c /分鐘之升 溫速率加熱至1 2 〇 °c,於該環境氣體中保持6 0分鐘後徐 冷0 然後於該預加熱步驟完之雙層基板之銅層表面形成蝕 刻阻劑層,以曝光、顯像、蝕刻進行形成上述電阻量測用 試樣及抗遷移性量測試樣的電路之餘刻步驟。之後的步驟 以及FT-IR分析結果亦同第一實施形態,故其說明予以省 略。 使用如同第一實施形態之電阻量測用試樣量測電阻。 結果,表面電阻率1 · 0x1 〇15歐姆/ □,體積電阻率在 4· 9x1 015歐姆·公分。又,量測恆溫恆濕處理(85 °C /85%RH/5 0小時)後之表面電阻率及體積電阻率。結果,表 面電阻率為6·7χ1014歐姆/□,體積電阻率1·4χ1〇15歐姆· 公分。而抗遷移試驗係於溫度85 °C,溼度85%之恆溫恆濕 槽内,利用上述抗遷移試驗用試樣,施加6 0伏特之電壓, 測出產生漏電流所需之時間。結果,產生漏電流所需時間 在1 0 0 0小時以上。至於高溫電路剝離防止能力,係用抗遷V. Description of the invention (24) The result of brushing the circuit board. However, the difference is that a pre-heating step is provided just before the double-layer substrate 5 \ 1 is finished. Therefore, the manufacturing process is almost the same as that of the first embodiment, and repeated descriptions are omitted, and only the pre-heating steps are described. By the direct metallization method as in the first embodiment, a double-layer substrate having a copper layer on both sides in a state where the copper layer and the polyimide resin layer are directly bonded is obtained. The double-layer substrate is then sent to a heating furnace in a dry state for pre-heat treatment. At this time, the temperature of the ambient gas is heated from room temperature to a temperature of 10 ° C / min to 120 ° C. After being held in the ambient gas for 60 minutes, it is slowly cooled to 0 and then doubled at the end of the preheating step. An etching resist layer is formed on the surface of the copper layer of the multi-layer substrate, and the remaining steps of forming the circuit for the resistance measurement sample and the anti-migration amount test sample are performed by exposure, development, and etching. The subsequent steps and the results of FT-IR analysis are also the same as those of the first embodiment, so the descriptions are omitted. The resistance was measured using a sample for resistance measurement like the first embodiment. As a result, the surface resistivity was 1.0 · 10 × 15 ohm / □, and the volume resistivity was 4.9 × 10 × 15 ohm · cm. In addition, the surface resistivity and volume resistivity after constant temperature and humidity treatment (85 ° C / 85% RH / 5 0 hours) were measured. As a result, the surface resistivity was 6.7 × 1014 ohm / □, and the volume resistivity was 1.4 × 1015 ohm · cm. The anti-migration test was performed in a constant temperature and humidity tank with a temperature of 85 ° C and a humidity of 85%. Using the sample for the anti-migration test, a voltage of 60 volts was applied to measure the time required to generate a leakage current. As a result, the time required for generating the leakage current is more than 1,000 hours. As for the high temperature circuit peeling prevention ability,

2169-5304-PFl(Nl).pt 第30頁 569656 號91〗奶叩7 五、發明說明(25) 移試驗用試樣,於3 5 n °r、、西洛^ 全無電路剝離之觀察。二匕度之,境氣體下暴露5分鐘’仍 其良好之產品。,、 b,相較於第一實施形態,係極 第三實施形態: 本實施形態呈示,—n楚 之聚醯亞胺樹脂膜T以㈡::施形態’使用50微米厚 酿亞胺樹脂層構成之雙接金屬化法製造由銅層及聚 咖始敗+ β w成雙層基板,用該雙層基板製造撓性印 席J線路板之結果。作太音你^ π β μ、+、^ ^ 1一奉貫施形態係於雙層基板之製造中, 取代上述銅離子吸附舟驟,1、/ 私 K ^ ^及附少驟,以鈷離子吸附步驟製造該聚醯2169-5304-PFl (Nl) .pt Page 30 569656 No. 91〗 Milk 7 V. Description of the invention (25) Transfer test sample, observation at 3 5 n ° r, silo ^ No circuit peeling . Secondly, exposure to ambient gas for 5 minutes is still a good product. Compared with the first embodiment, the third embodiment is the third embodiment: This embodiment shows that the n-polyimide resin film T is ㈡ :: appearance mode 'using a 50 micron thick imine resin The double-junction metallization method of layer construction results in the production of a double-layer substrate consisting of a copper layer and a polycaffeine + β w, and the use of the double-layer substrate to produce a flexible printed circuit board. As a Taiyin you ^ π β μ, +, ^ ^ 1 A consistent application mode is used in the manufacture of double-layer substrates, replacing the copper ion adsorption steps described above, 1, / K ^ ^ and attached steps, cobalt Ion adsorption step to make the polyfluorene

亞如:树脂膜兩面有銅展Μ雔s A ^ ^ ^ ,別層的雙層基板。此外更呈示遷移試驗 之、…果。以下依序說明各步驟。 FT tH:’環步驟、中和步驟、開環後及中和後之 FT-IR为析結果,與第一實施形態同。Yaru: The copper foil M 雔 s A ^ ^ ^ on both sides of the resin film, a double-layer substrate of another layer. In addition, the results of migration tests are presented ... The steps are explained in order below. FT tH: 'ring step, neutralization step, FT-IR after ring opening and after neutralization are analytical results, which are the same as those of the first embodiment.

Bt描Γ t步驟凡成後,於错離子吸附步驟,使聚醯亞胺樹 :、 和之羧基與含鈷離子之溶液接觸,以鈷吸附於羧 基,於聚醯亞胺樹脂臈之兩面形成羧酸鈷鹽。在此所用之 含钻溶液,係始漢度0.05莫耳/公升,溶液溫度25t之硫 酸鈷溶液’於該溶液浸泡15分鐘。然後水洗,去除殘留於 聚醯亞胺樹脂膜表面之溶液。 奴後於鈷膜形成步驟,將鈷離子吸附步驟中形成於 聚醯亞胺樹脂膜表面之緩酸始鹽予以還原,於聚酿亞胺樹 脂膜表面形成錄薄膜。本實施形態之還原係將形成叛酸鈷 鹽之聚,亞胺樹脂膜於濃度0 01莫耳/公升,溶液溫度25 C之硼氫化鈉溶液中浸泡5分鐘,與還原劑接觸而進行。After the completion of the Bt step, the polyimide tree is contacted with a solution containing cobalt ions in the ion adsorption step, and cobalt is adsorbed on the carboxyl group to form on both sides of the polyimide resin. Cobalt carboxylate. The diamond-containing solution used here was a cobalt sulfate solution of 0.05 mol / liter and a solution temperature of 25 t. The solution was immersed in the solution for 15 minutes. Then, it was washed with water to remove the solution remaining on the surface of the polyimide resin film. After the cobalt film formation step, the slow acid salt formed on the surface of the polyimide resin film in the cobalt ion adsorption step is reduced to form a thin film on the surface of the polyimide resin film. The reduction of this embodiment is performed by forming a polymer of cobalt metaborate salt. The imine resin film is immersed in a sodium borohydride solution having a concentration of 0.01 mol / liter and a solution temperature of 25 C for 5 minutes, and is contacted with a reducing agent.

2169-5304-PFl(Nl).ptc 第31頁 569656 曰 修正2169-5304-PFl (Nl) .ptc page 31 569656 correction

__案號 91132587 五、發明說明(26) 然後水洗,去除附著於表面之還原劑。本實施形態中,以 姑離子吸附步驟及鈷薄膜形成步驟反覆多次進行。結果, 最後鈷吸附步驟完之階段,吸附於聚醯亞胺樹脂膜上之鈷 離子總量達2034毫克/平方米,最終在鈷薄膜形成步驟的 還原完之階段’聚醢亞胺樹脂膜上可形成1 4 2 2毫克/平方 米重量厚度之鈷薄膜層。 然後,於電路用銅層形成步驟,將鈷薄膜形成步驟中 形成鈷薄膜之聚醯亞胺樹脂膜表面,用電解法電著銅成 分,電鍍追加銅薄膜至9微米厚之銅層。在此用於電解之 溶液及電解條件係,使用調為焦磷酸銅85克/公升至9〇克/ 公升,焦磷酸鉀330克/公升,氨水4毫升/公升,p比 (P207/Cu) = 6.5 至 6·8,ρΗ = 8·6 至 8·9,液溫 55°C 之範圍之 溶液,空氣攪拌下,採用電流密度33安培/平方公寸。電 鍍追加完,充分水洗,去除附著之焦磷酸銅溶液。 藉以上之直接金屬化法,即得到介以鈷薄膜層而銅層 與聚醢亞胺樹脂層直接貼合之狀態下,兩面有銅層之雙層 基板。然後該雙層基板於乾燥狀態下送入加熱爐内,作預 加熱處理。此時之環境氣體係由室溫以1 〇 °c /分鐘之升溫 速率加熱至150 °C,於該環境氣體中保持60分鐘後徐冷。 然後於该預加熱步驟完之雙層基板之銅層表面形成蝕 刻阻劑層,以曝光、顯像、蝕刻進行形成上述電阻量測用 試樣及抗遷移性量測試樣的電路之蝕刻步驟。電路钱刻後 之FT-IR分析結果亦同第一實施形態。 電路#刻元之基板,於殘留金屬成分去除步驟中,以__ Case No. 91132587 V. Description of the invention (26) Then wash with water to remove the reducing agent attached to the surface. In this embodiment, the primary ion adsorption step and the cobalt thin film formation step are repeated several times. As a result, the total amount of cobalt ions adsorbed on the polyimide resin film reached 2034 mg / m 2 at the final stage of the cobalt adsorption step, and finally on the polyimide resin film during the reduction stage of the cobalt film formation step. It can form a cobalt thin film layer with a thickness of 142 mg / m 2. Then, in the step of forming a copper layer for a circuit, the surface of the polyimide resin film of the cobalt thin film formed in the step of forming the cobalt thin film was electro-deposited with a copper component by electrolytic method, and an additional copper thin film was formed to a thickness of 9 micron. The solution and electrolytic conditions used for electrolysis here are adjusted to 85 g / L to 90 g / L copper pyrophosphate, 330 g / L potassium pyrophosphate, 4 ml / L ammonia, p ratio (P207 / Cu) = 6.5 to 6 · 8, ρΗ = 8 · 6 to 8 · 9, the solution temperature is 55 ° C, the current density is 33 amps per square inch. After the electroplating is completed, wash it thoroughly with water to remove the attached copper pyrophosphate solution. By the above direct metallization method, a double-layer substrate with a copper layer on both sides is obtained in a state where the copper layer is directly bonded to the polyimide resin layer through the cobalt thin film layer. The double-layer substrate is then sent to a heating furnace in a dry state for pre-heating treatment. At this time, the ambient gas system was heated from room temperature to 150 ° C at a temperature increasing rate of 10 ° c / minute, and then kept in the ambient gas for 60 minutes, and then slowly cooled. Then, an etching resist layer is formed on the surface of the copper layer of the double-layer substrate after the pre-heating step, and the etching step of forming the above-mentioned resistance measurement sample and anti-migration amount test circuit by exposure, development, and etching is performed. . The result of FT-IR analysis after the circuit money is carved is also the same as the first embodiment. Circuit #lithography of the substrate, in the residual metal component removal step, to

2169-5304-PFl(Nl).ptc 第32頁 569656 案號 91132587 五、發明說明(27) 如同第一實施形態之酸洗處理、水洗處理去除附著之鹽酸 成分。又,以電路蝕刻製造之電阻量測用試樣及抗遷移量 測試樣,亦同第一實施形態,其說明予以省略以免重複。 殘留金屬成分去除步驟完之階段,外露部位之聚醯亞 胺樹脂膜試以FT-IR分析之結果,χ線繞射法及EpM分析之 結果,亦同第一實施形態,無鈷成分及其它金脣成分之檢 出,確認酸洗去除已切實進行。然後對殘留金屬成分去除 步驟完之基板,於再閉環步驟進行閉環操作。該再閉環步 驟係採用如同第一實施形態之方法,使於無電路圖型存 在,外露之聚醯亞胺樹脂膜表面以開環狀態存在之羧基閉 環。而確認已閉環之FT-IR分析結果,亦同第一實施形 態0 利用藉以上製造方法得到之電阻量測用試樣量測電 ΓηΊ果,表面電阻率為1 · 〇Xl015歐姆/□,體積電阻率在 5.0XUF歐姆.公分。又,量測恆溫恆濕處理(85〇c /85%RH/50小時)後之表面電阻率及體積電阻率。社 =面電阻率6.5x10h歐姆/□,體積電阻率在ΐ 4χΐ°〇ΐ5歐 Ϊ、甚t。而抗遷移試驗係於溫度85t,澄度85%之恆溫 :濕槽内’利用上述抗遷移試驗用試樣,&加6 壓,測出產生漏電流所需之時間。社果 需時間在1〇。。小時以上至二;^為,產生漏電流所 用,遷移試驗用試樣,於35(rc溫度之環境氣體止:力: 釦,仍全無電路剝離之觀察。 /刀 態’係極其良好之產m,增加二實施形 曰1,則武樣數以作比2169-5304-PFl (Nl) .ptc Page 32 569656 Case No. 91132587 5. Description of the invention (27) The acidic washing treatment and water washing treatment in the first embodiment remove the attached hydrochloric acid component. The resistance measurement sample and the anti-migration test sample manufactured by circuit etching are also the same as those in the first embodiment, and descriptions thereof are omitted to avoid repetition. At the stage of removing the residual metal components, the results of FT-IR analysis of the polyimide resin film at the exposed parts, the results of the χ-ray diffraction method, and the EpM analysis are also the same as those of the first embodiment, without cobalt components and other The detection of gold lip components confirmed that the pickling removal had been carried out. Then, after the step of removing the residual metal components, the closed-loop operation is performed in the closed-loop step. This re-closing step is a method similar to the first embodiment, in which the carboxyl group existing on the surface of the exposed polyimide resin film in a ring-open state exists in a circuitless pattern. The closed-loop FT-IR analysis results are also the same as in the first embodiment. 0 The electric resistance Γη is measured using the sample for resistance measurement obtained by the above manufacturing method. The surface resistivity is 1 · 〇Xl015 ohm / □, volume. Resistivity is 5.0XUF ohm.cm. In addition, the surface resistivity and volume resistivity after constant temperature and humidity treatment (85 ° c / 85% RH / 50 hours) were measured. The area resistivity is 6.5x10h ohm / □, and the volume resistivity is ΐ 4χΐ ° 〇 欧 5 欧, even t. The anti-migration test was performed at a constant temperature of 85t and a clearness of 85%: in a wet tank. Using the above-mentioned sample for anti-migration test, & 6 pressure was applied to measure the time required to generate a leakage current. Social fruit takes 10 minutes. . Hours to two; ^ is the sample for migration test used to generate leakage current, at 35 (rc temperature of the ambient gas stop: force: buckle, still no observation of circuit peeling. / Knife state 'is an extremely good product m, increase the number of the second embodiment is 1, then the number of martial arts is compared

569656569656

—__案號 91132587 五、發明說明(28) 對,則相較於第二實施形態,呈示更安定之電路剝離強 度’乃南溫電路剝離防止能力優之產品。 第四實施形態: 本實施形態係採用第一實施形態之方法作為基本製 程’直接於電路蝕刻步驟之後設有鍍錫步驟。因此僅就附 加於第一實施形態之製程的鍍層處理步驟作詳細說明,為 免重複其它部份予以省略。 如同第一實施形態,經開環步驟、中和步驟、銅離子 吸附步驟、銅薄膜形成步驟、電路用銅層形成步驟,以直 接金屬化法得到銅層與聚醯亞胺樹脂層直接貼合之狀態 下’兩面有銅層之雙層基板。然後於該雙層基板之銅層表 面形成蝕刻阻劑層,以曝光、顯像、蝕刻進行形成上述電 阻量測用試樣及抗遷移性量測試樣的電路之蝕刻步驟。 然後於電路蝕刻後,設鍍錫步驟,於電路上試驗性鍍 锡。鍍錫係用SHIPLEY FAR EAST(股)製之LT - 34鍍錫液, 於溶液溫度7 5 °C鍍層至約相當於1微米之厚度。 形成該錫層後,外露部位之聚醯亞胺樹脂膜以FT—IR 分析,可確認1 650cm—1之開環醯胺(c = 0)吸收,1 547CHT1附 近之開環醯胺(N-H)吸收,而1 707cm-1及1 308CHT1附近之羧 基(COO)之吸收再度出現,比對第一實施形態中電路蝕刻 後隨即作F T - I R分析之結果,與施以鑛錫時同。 鑛錫處理步驟完之基板,於其次之殘留金屬成分去除 步驟中,以酸洗處理去除外露於基板上形成之線路的間隙 之聚醯亞胺樹脂膜表面,來自羧酸錫鹽之殘留錫成分,將—__ Case No. 91132587 V. Description of the invention (28) Yes, compared with the second embodiment, it presents a more stable circuit peeling strength ', which is a product with excellent peeling prevention ability at South temperature. Fourth Embodiment: This embodiment adopts the method of the first embodiment as a basic process, and a tin plating step is provided directly after the circuit etching step. Therefore, only the plating process steps added to the process of the first embodiment will be described in detail, and the other parts will be omitted to avoid repetition. As in the first embodiment, the copper layer and the polyimide resin layer are directly bonded by a direct metallization method through a ring opening step, a neutralization step, a copper ion adsorption step, a copper thin film forming step, and a copper layer forming step for a circuit. In this state, a two-layer substrate with a copper layer on both sides. Then, an etching resist layer is formed on the surface of the copper layer of the double-layer substrate, and the etching step of forming the above-mentioned sample for resistance measurement and the circuit for measuring the amount of anti-migration is performed by exposure, development, and etching. After the circuit is etched, a tin plating step is set up to experimentally tin the circuit. The tin plating is made of SHIPLEY FAR EAST (stock) LT-34 tin plating solution, and the plating is performed at a solution temperature of 75 ° C to a thickness of about 1 micron. After the formation of the tin layer, the polyimide resin film in the exposed part was analyzed by FT-IR, and it was confirmed that the ring-opening fluorene (c = 0) absorption at 1 650 cm-1 and the ring-opening amine (NH) near 1 547CHT1 Absorption, and the absorption of carboxyl groups (COO) near 1 707 cm-1 and 1 308 CHT1 reappeared. Comparing the results of FT-IR analysis after circuit etching in the first embodiment, the same as when ore tin was applied. In the substrate after the ore tin processing step, in the next remaining metal component removing step, the surface of the polyimide resin film exposed from the gaps of the lines formed on the substrate is removed by pickling, and the residual tin component from the tin carboxylate salt is removed. ,will

569656 -— 案號 91132587__年月日__修正 五、發明說明(29) 之轉化為羧基。在此所作之酸洗處理係用濃度〇 · 〇丨莫耳/ 公升之鹽酸溶液,溶液溫度為室溫,將電路蝕刻完之基板 次泡於該溶液5分鐘。然後水洗,去除附著之鹽酸成分。 如此製造之電阻量測用試樣及抗遷移量測試樣因與第一實 施形態同,其說明省略。 殘留金屬成分去除步驟完之階段,外露部位之聚醯亞 胺樹脂膜以FT- I R分析,如同第一實施形態,可確認 1 649cm的開環醯胺(c = 〇)之吸收,1 541cm-1附近之開環醢 胺(N-H)之吸收,而i7i4cm-i及1 298CDT1附近有羧基(C00)之 及收出現。然後以X線繞射法及波長分散型電子探針微分 析(ΕΡΜΑ)二種方法分析有無金屬成分吸附殘留,則無法檢 出錫成分及其它金屬成分,確認酸洗去除已切實進行。 然後’對殘留金屬成分去除步驟完之基板,於再閉環 步驟進行閉環操作。該再閉環步驟及已否閉環之確認所作 之FT-IR分析結果,亦同第一實施形態,不再詳細說明, 然已證明閉環之順利進行。 使用經以上製造方法得到之電阻量測用試樣量測電 阻。結果,表面電阻率為丨· 〇χ1〇15歐姆/ □,體積電阻率在 i· 7χ1015歐姆·公分。又,量測恆溫恆濕處理(85 〇c /85%RH/5 0小時)後之表面電阻率及體積電阻率。結果為, 表面電阻率6·6χ1014歐姆/□,體積電阻率在14乂1〇15歐 姆·公分。而抗遷移試驗係於溫度8 5 °c,溼度8 5 %之恆溫 怔濕槽内’利用上述抗遷移試驗用試樣,施加6〇伏特之電 壓’測出產生漏電流所需之時間。結果為,產生漏電流所569656 --- Case No. 91132587__year month day__ amendment V. The description of invention (29) is converted to carboxyl group. The pickling treatment performed here was performed using a hydrochloric acid solution of a concentration of mol / liter, the temperature of the solution was room temperature, and the substrate on which the circuit was etched was bubbled in the solution for 5 minutes. It was then washed with water to remove the attached hydrochloric acid component. Since the resistance measurement sample and the anti-migration test sample manufactured in this way are the same as those in the first embodiment, description thereof is omitted. At the stage of removing the residual metal component, the polyimide resin film of the exposed part was analyzed by FT-IR. As in the first embodiment, it was confirmed that the absorption of 1 649 cm of ring-opened amidine (c = 〇), 1 541 cm- The absorption of ring-opened ammonium amine (NH) near 1, and the carboxyl group (C00) near i7i4cm-i and 1 298CDT1 appeared. The X-ray diffraction method and the wavelength-dispersed electron probe microanalysis (EPMA) were used to analyze the presence or absence of adsorption of metal components. The tin components and other metal components could not be detected, and it was confirmed that the pickling and removal had been carried out. Then, the closed-loop operation is performed on the substrate after the residual metal component removing step is completed. The results of the FT-IR analysis of this re-closed-loop step and the confirmation of whether the closed-loop has been closed are also the same as in the first embodiment, and will not be described in detail, but it has been proved that the closed-loop has proceeded smoothly. The resistance was measured using the sample for resistance measurement obtained by the above manufacturing method. As a result, the surface resistivity was 丨 · 〇χ1015 ohm / □, and the volume resistivity was i · 7χ1015 ohm · cm. In addition, the surface resistivity and volume resistivity were measured after constant temperature and humidity treatment (85 ° c / 85% RH / 5 0 hours). As a result, the surface resistivity was 6.6 × 1014 ohm / □, and the volume resistivity was 14 乂 1015 ohm · cm. The anti-migration test was carried out in a constant temperature humidity tank at a temperature of 85 ° C and a humidity of 85%. The above-mentioned sample for the anti-migration test was applied with a voltage of 60 volts to measure the time required to generate a leakage current. As a result, a leakage current is generated.

569656 案號 91132587 五、發明說明(30)569656 Case number 91132587 V. Description of the invention (30)

±___A 曰 修正 需時間在1 0 0 0小時以上。至於高溫電路剝離防止能力,係 用抗遷移試驗用試樣,僅於3 5 0 °c溫度之環境氣體下暴露 2 0秒,已觀察到電路之剝離。 第五實施形態. 本實施形態係採用第一實施形態之方法作為基本製 程,於再閉環步驟之後設有鍍錫步驟。因此僅就附加於第 一實施形態之製程的鍍層處理步驟作詳細說明,為免重才复 其它部份予以省略。 如同第一實施形態,經開環步驟、中和步驟、銅離子 吸附步驟、銅薄膜形成步驟、電路用銅層形成步驟,以直 接金屬化法得到銅層與聚醯亞胺樹脂層直接貼合之狀萍、 下,兩面有銅層之雙層基板。然後於該雙層基板之銅層表 面形成蝕刻阻劑層,以曝光、顯像、蝕刻進行形成上述電 阻量測用試樣及抗遷移性量測試樣的電路之餘刻步驟。然 後更如同第一實施形態,施行殘留金屬成分去除步驟,再; 閉環步驟。 然後於施行再閉環步驟後,設鍍錫步驟,於電路上試 驗性鍍錫。鍍錫係用SHIPLEY FAR EAST(股)製之LT — 34^ 錫液,於溶液溫度75°C鍍層至約相當於}微米之厚度。又 該鍍錫層形成後,外露部位之聚醯亞胺樹脂膜""以 FT-IR分析,如同不鍍錫之第一實施形態,為免重複其詳 細說明省略’證明閉環操作已順利進行。χ,以χ線繞射 長分散型電子探針微分析(ερμα)二種方法分析有無 鑛錫液之吸附殘留,尤無錢㈣成分及其它± ___ A said correction takes more than 100 hours. As for the high-temperature circuit peeling prevention ability, a sample for the anti-migration test was exposed to an ambient gas at a temperature of 350 ° C for 20 seconds, and peeling of the circuit was observed. Fifth Embodiment. This embodiment uses the method of the first embodiment as a basic process, and a tin plating step is provided after the re-closed loop step. Therefore, only the plating process steps added to the manufacturing process of the first embodiment will be described in detail, and other parts will be omitted to avoid weight. As in the first embodiment, the copper layer and the polyimide resin layer are directly bonded by a direct metallization method through a ring opening step, a neutralization step, a copper ion adsorption step, a copper thin film forming step, and a copper layer forming step for a circuit. A double-layer substrate with a copper layer on both sides. Then, an etching resist layer is formed on the surface of the copper layer of the double-layer substrate, and the remaining steps of forming a circuit for the resistance measurement sample and the anti-migration amount test sample are performed by exposure, development, and etching. Then, as in the first embodiment, a step of removing residual metal components is performed, and a closed-loop step is performed. After performing the re-closed loop step, a tin plating step is set up to experimentally tin the circuit. Tin plating is a LT-34 ^ tin solution manufactured by SHIPLEY FAR EAST (stock), and is plated at a solution temperature of 75 ° C to a thickness of approximately} microns. After the formation of the tin-plated layer, the exposed polyimide resin film is analyzed by FT-IR, as in the first embodiment without tinning. In order to avoid repeating its detailed description, it is omitted to prove that the closed-loop operation has been smooth. get on. χ, using the χ-ray diffraction long-dispersion electronic probe microanalysis (ερμα) to analyze the presence or absence of adsorption residues of ore tin solution, especially no money and other components

569656569656

即使存在亦應係在檢測界限以下。 利用藉以上製造方法得到 阻。έ士婁主;Φ之電阻$測用試樣量測電 阻、、、口果’表面電阻率為1 · 0 X1 0丨5鼢嫵/门 _ _ ^ 5.2xl〇i5歐姆.公分。又,旦項卩&姆(□,體積電阻率在 里測怪溫怔濕處理(8 5 〇c /85%RH/50小時)後之表面電阻率及體積電阻率。社果, 表面電阻率5.9x10“歐姆/□,體積電阻率在l3xi〇is歐 姆.公分。而抗遷移試驗係於溫度85t,溼度85%之恆溫 恆濕槽内,利用上述抗遷移試驗用試樣,施加6〇伏特之電 壓,測出產生漏電流所需之時間。結果,I生漏電流所需 時間在約600至700小時。但高溫電路剝離防止能力方面, 僅將抗遷移試驗用試樣於3 5 〇 溫度之環境氣體下暴露2 〇 秒,已觀察到電路之剝離。 比較例1 : 第一實施形態之蝕刻步驟完以後,無殘留金屬成分去 除步驟及再閉環步驟之施行,僅作如同再閉環步驟之熱處 理,製作電阻量測用試樣及抗遷移試驗用試樣。因此,經 蝕刻而外露之部位的聚醯亞胺樹脂膜表面,金屬成分依然 殘留。 加熱完後,外露之部位的聚醯亞胺樹脂膜以FT- IR分 析聚醮亞胺樹脂膜,1 647cm-1附近之開環醯胺(c = 〇)吸收, 1 554(^1附近之開環醯胺”-1〇吸收,及1371(:111-1附近所見 之羧基(COO)吸收均已消失。然而,於1 3 1 6CIT1附近見有應 係羧基(COO)吸收之尖峰。以該結果判斷,加熱應會起一 定之閉環現象,但無法完全閉環。Even if it exists, it should be below the detection limit. Use the above manufacturing method to get resistance.士士洛 主; Φ's resistance $ test sample for measuring resistance, resistance, mouth fruit ’surface resistivity is 1 · 0 X1 0 丨 5 鼢 妩 / gate _ _ ^ 5.2xl0i5 ohm.cm. In addition, the surface resistivity and volume resistivity after the temperature and humidity treatment (85 ° C / 85% RH / 50 hours) are measured in the volume resistivity (□, the volume resistivity is measured here.) The rate is 5.9x10 "ohm / □, and the volume resistivity is 13 xi ohms. Cm. The anti-migration test is performed in a constant temperature and humidity tank with a temperature of 85t and a humidity of 85%. Using the above-mentioned sample for anti-migration test, apply 6 The time required to generate a leakage current was measured at a voltage of volts. As a result, the time required to generate a leakage current was about 600 to 700 hours. However, in terms of the ability to prevent peeling of high-temperature circuits, only the anti-migration test sample was used at 3 5 〇 Exposure to ambient air at a temperature of 20 seconds, peeling of the circuit has been observed. Comparative Example 1: After the etching step of the first embodiment is completed, there is no remaining metal component removal step and re-closed-loop step, and it is performed just like the re-closed-loop step. After heat treatment, samples for resistance measurement and anti-migration test are produced. Therefore, the metal components of the polyimide resin film on the exposed portions are still left after etching. Imine tree The membrane was analyzed by FT-IR for polyimide resin membranes, absorption of cyclamidine (c = 〇) near 1 647 cm-1, absorption of cyclamamine near 1 554 (^ 1 -10), and 1371 ( : The absorption of carboxyl group (COO) seen near 111-1 has disappeared. However, there are peaks of absorption of carboxyl group (COO) near 1 3 6 CIT1. Based on the results, it is judged that heating should cause a certain closed-loop phenomenon. But it cannot be completely closed loop.

2169-5304-PFl(Nl).ptc 第37頁 569656 案號 91132587 五、發明說明(32) 又’加熱完後外露之部位的聚醯亞胺樹脂膜表面,以 X線繞射法及波長分散型電子探針微分析(EPMA)二種方法 分析有無金屬成分吸附殘留。結果,可確認有銅成分之殘 留0 然後,以如同實施形態之手法作電阻量測及抗遷移性 試驗。結果,表面電阻率為1· 〇xl 015歐姆/ □,體積電阻率 為2·6χ1015歐姆·公分,恆溫恆濕處理(85°c/85%RH/5〇小 時)後之表面電阻率為3·9χ1〇14歐姆/□,體積電阻率在 1 · Oxl 015歐姆·公分,低於上述實施形態中得到之值。而 抗遷移試驗之結果為,產生漏電流所需時間約420小時。 至於高溫電路剝離防止能力,僅將抗遷移試驗用試樣於 3 5 0 °C溫度之環境氣體下暴露2 〇秒,已觀察到電路之剝 離。 比較例2 : 第一實施形態之蝕刻步驟完以後,僅施行殘留金屬成 分去除步驟,無再閉環步驟,僅以吹風機乾燥,製作電阻 量測用試樣及抗遷移試驗用試樣。因此,經蝕刻而外露之 部位的聚醯亞胺樹脂膜表面,雖無金屬成分殘留,但也終 無閉環操作之進行。 然後,以如同實施形態之手法作電阻量測及抗遷移性 試驗。結果,表面電阻率為Ι.βχΙΟ11歐姆/ □,體積電阻率 為7·2χ1013歐姆·公分,恆溫恆濕處理(85°C/85%RH/50小 時)後之表面電阻率為9· 6x1 012歐姆/□,體積電阻率 3· 3x1 〇14歐姆·公分,係低於上述實施形態中得到之值。2169-5304-PFl (Nl) .ptc Page 37 569656 Case No. 91132587 V. Description of the invention (32) The surface of the polyimide resin film exposed after heating is dispersed by X-ray diffraction and wavelength Two types of electronic probe microanalysis (EPMA) are used to analyze the presence or absence of adsorption of metal components. As a result, it was confirmed that the copper component remained at 0. Then, resistance measurement and anti-migration test were performed in the same manner as in the embodiment. As a result, the surface resistivity was 1.0 × l 015 ohm / □, the volume resistivity was 2.6 × 1015 ohm · cm, and the surface resistivity after constant temperature and humidity treatment (85 ° c / 85% RH / 50 hours) was 3 · 9 × 1014 ohms / □, the volume resistivity is 1 · Oxl 015 ohms · cm, which is lower than the value obtained in the above embodiment. As a result of the anti-migration test, the time required to generate a leakage current was about 420 hours. As for the ability to prevent peeling of high-temperature circuits, only the samples for the anti-migration test were exposed to an ambient gas at a temperature of 350 ° C for 20 seconds, and peeling of the circuit was observed. Comparative Example 2: After the etching step of the first embodiment is completed, only the residual metal component removing step is performed, there is no further closed-loop step, and only the dryer is used to prepare a sample for resistance measurement and a sample for resistance to migration test. Therefore, the surface of the polyimide resin film exposed by the etching has no metal component remaining, but no closed-loop operation is performed. Then, resistance measurement and anti-migration test were performed in the same manner as in the embodiment. As a result, the surface resistivity was 1.βχ1011 ohm / □, the volume resistivity was 7.2x1013 ohm · cm, and the surface resistivity after constant temperature and humidity treatment (85 ° C / 85% RH / 50 hours) was 9.6x1 012 Ohm / □, the volume resistivity of 3 · 3 × 10 ohm · cm is lower than the value obtained in the above embodiment.

2169-5304-PFl(Nl).ptc 第38頁 5696562169-5304-PFl (Nl) .ptc Page 38 569656

五、發明說明(33) 而抗遷移試驗之結果為,產生漏電流所需時間約35〇小 時。至於高溫電路剝離防止能力,僅將抗遷移試驗用試樣 於3 5 0 °C溫度之環境氣體下暴露2 0秒,已觀察到電路之剝’ 離。 》 比較例3 : 第一實施形態之餘刻步驟完以後,無殘留金屬成分去 除步驟及再閉環步驟之施行’僅作如同再閉環步驟之熱處 理,其後設如同第五實施形態之鍍錫處理步驟,製作電阻 量測用試樣及抗遷移試驗用試樣。亦即,以鑛錫步驟為比 較例1之最終步驟,經蝕刻而外露之部位的聚醯亞胺樹脂 膜表面,金屬成分依然殘留。 因此,經蝕刻而外露之部位的聚醯亞胺樹脂膜以 FT -IR分析,1647c m_1附近之開環醯胺(c = 〇)吸收,1554cm-1 附近之開環醯胺(N-Η)吸收,及1 37 1 cm-1附近所見之敌基 (C00)吸收已消失。然而,於13 16cm-1附近有應係羧基 (C00)之吸收出現。以該結果可判斷,加熱應會起一定之 閉環現象,但無法完全閉環。 又,加熱完後外露之部位的聚醯亞胺樹脂膜表面,以 X線繞射法及波長分散型電子探針微分析(ΕΡΜΑ)二種方法 分析有無金屬成分吸附殘留。結果,可確認有銅成分及鍍 液的錫成分之殘留。 然後,以如同實施形態之手法作電阻量測及抗遷移性 試驗。結果,表面電阻率為1.0x1 〇15歐姆/ □,體積電阻率 在2·3χ1015歐姆·公分,恆溫恆濕處理(85°C/85%RH/50小5. Description of the invention (33) The result of the anti-migration test is that the time required to generate a leakage current is about 35 hours. As for the high-temperature circuit peeling prevention ability, only the sample for the anti-migration test was exposed to an ambient gas at a temperature of 350 ° C for 20 seconds, and peeling of the circuit was observed. 》 Comparative Example 3: After the remaining steps of the first embodiment are completed, no residual metal component removal step and re-closed-loop step are performed. 'The heat treatment is similar to the re-closed-loop step, and the tin-plating treatment is performed as in the fifth embodiment. In the step, a sample for resistance measurement and a sample for anti-migration test are prepared. That is, with the ore tin step as the final step of Comparative Example 1, the metal component of the polyimide resin film surface on the exposed portion after etching is still left. Therefore, the polyimide resin film exposed at the etched position was analyzed by FT-IR, and the ring-opened fluoramine (c = 〇) near 1647c m_1 was absorbed, and the ring-opened fluoramine (N-Η) near 1554cm-1 Absorption, and the absorption of enemy base (C00) seen near 1 37 1 cm-1 has disappeared. However, absorption of the carboxyl group (C00) occurred near 13 16 cm-1. From this result, it can be judged that heating should cause a certain closed-loop phenomenon, but it cannot be completely closed-loop. In addition, the surface of the polyimide resin film exposed after heating was analyzed by X-ray diffraction method and wavelength-dispersed electronic probe microanalysis (EPMA) for the presence or absence of adsorption of metal components. As a result, it was confirmed that the copper component and the tin component of the plating solution remained. Then, resistance measurement and anti-migration test were performed in the same manner as in the embodiment. As a result, the surface resistivity was 1.0 × 10 ohm / □, the volume resistivity was 2 · 3 × 1015 ohm · cm, and the temperature and temperature were constant (85 ° C / 85% RH / 50 hours).

2169-5304-PFl(Nl).ptc 第39頁 569656 —---案號 __车月曰__修正___ 五、發明說明(34) 時)後之表面電阻率為3. Oxl 014歐姆/□,體積電阻率在 8 · 9 X1 014歐姆·公分,低於上述實施形態中得到之值。而 抗遷移試驗之結果為,產生漏電流所需時間約4〇〇小時。 而至於南溫電路剝離防止能力,僅將抗遷移試驗用試樣於 3 5 0 °C溫度之環境氣體下暴露2 〇秒,已觀察到電路之剝 離。 對照上述第一實施形態至第三實施形態,與比較例1 及比較例2二比較例可知,以實施形態之製造方法得到之 撓性印刷線路板,可說呈現出遠高於比較例之撓性印刷線 路板的抗遷移性。又,對照第四實施形態及第五實施形態 與比較例3可知,即使設有鍍層步驟,較之以往之不作閉 環處理者’呈現出較高抗遷移性。由以上可知,①自聚醯 亞胺樹脂表面去除殘留金屬成分,並作閉環處理以提高表 面電阻及體積電阻,②外露於電路間之聚醯亞胺樹脂膜表 面無金屬成分殘留,此二要素於抗遷移性之提升大有助 益。又知,有關高溫電路剝離防止能力,因預加熱之有無 而大大不同。 發明效果 利用本發明有關之撓性印刷線路板製造方法,即使以 用直接金屬化法得到之雙層基板製造撓性印刷線路板,以 :刻形成電路圖型,外露於已去除銅之部位的樹脂 …、金屬成分殘留,而因蝕刻液必然引起之基材樹脂的開产 現象,直接金屬化法的必要步驟之開環處理一旦開環之^ 569656 _案號91132587_年月日 修正_ 五、發明說明(35) 脂表面,亦可予以閉環。結果,表面電阻及體積電阻率值 變大,而抗遷移性提升。並且,撓性印刷線路板之製程内 因設有預加熱步驟,即可大幅提升高溫電路剝離防止能 力。因此,印刷線路板產品之品質可靠度,得以空前地大 幅提升。2169-5304-PFl (Nl) .ptc Page 39 569656 ----- Case No. __Che Yueyue __ Amendment ___ 5. When the invention description (34)) the surface resistivity after 3. Oxl 014 ohm / □, the volume resistivity is 8 · 9 X1 014 ohm · cm, which is lower than the value obtained in the above embodiment. As a result of the anti-migration test, the time required to generate a leakage current was about 4,000 hours. As for the NanWen circuit peeling prevention ability, only the sample for the anti-migration test was exposed to an ambient gas at a temperature of 350 ° C for 20 seconds, and the peeling of the circuit was observed. Comparing the first embodiment to the third embodiment described above, and comparative examples 1 and 2 and comparative examples 2, it can be seen that the flexible printed wiring board obtained by the manufacturing method of the embodiment exhibits a much higher flexibility than the comparative example. Resistance to migration of flexible printed wiring boards. Further, comparing the fourth embodiment and the fifth embodiment with Comparative Example 3, it can be seen that even if a plating step is provided, it exhibits higher anti-migration properties than a conventional non-closed-loop processor '. From the above, ① remove the residual metal components from the surface of the polyimide resin and perform a closed-loop treatment to improve the surface resistance and volume resistance; ② no metal components remain on the surface of the polyimide resin film exposed between the circuits, these two elements The improvement in anti-migration is of great help. It is also known that the ability to prevent peeling of high-temperature circuits varies greatly depending on the presence or absence of preheating. ADVANTAGEOUS EFFECTS OF THE INVENTION By using the method for manufacturing a flexible printed wiring board according to the present invention, even if a flexible printed wiring board is manufactured by using a double-layer substrate obtained by a direct metallization method, a circuit pattern is formed by engraving, and the resin exposed on the portion from which copper has been removed …, The metal component remains, and the substrate resin is inevitable due to the etching solution. Once the ring-opening process of the necessary steps of the direct metallization method is opened, it is ^ 569656 _ Case No. 91132587_ year month day amendment Description of the invention (35) Lipid surface can also be closed loop. As a result, the surface resistance and volume resistivity become larger, and the anti-migration property is improved. In addition, since the pre-heating step is provided in the process of manufacturing the flexible printed circuit board, the ability to prevent high-temperature circuit peeling can be greatly improved. Therefore, the reliability of the quality of printed circuit board products has been greatly improved.

2169-5304-PFl(Nl).ptc 第41頁 569656 案號 91132587 修正 圖式簡單說明 為使本發明之上述目的、特徵和優點能更明顯易懂, 特舉實施例’並配合所附圖不,進行詳細說明如下: 第1圖係為顯示依據本發明之撓性印刷線路板製造方 法之流程圖。 第2圖係為顯示依據本發明一實施例直接金屬化法之 撓性印刷線路板製法之流程圖。 第3圖係為顯示依據本發明另一實施例直接金屬化法 之撓性印刷線路板製法之流程圖。 第4圖係為顯示依據本發明撓性印刷線路板之示意2169-5304-PFl (Nl) .ptc Page 41 569656 Case No. 91132587 Amend the diagram briefly to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the embodiments are given in conjunction with the drawings Detailed description is as follows: FIG. 1 is a flowchart showing a method for manufacturing a flexible printed wiring board according to the present invention. FIG. 2 is a flowchart showing a method of manufacturing a flexible printed wiring board by a direct metallization method according to an embodiment of the present invention. FIG. 3 is a flowchart showing a method of manufacturing a flexible printed wiring board by a direct metallization method according to another embodiment of the present invention. FIG. 4 is a schematic view showing a flexible printed wiring board according to the present invention.

圖。 符號說明 41銅薄膜層; 4 5聚醯亞胺樹脂膜。Illustration. DESCRIPTION OF SYMBOLS 41 copper thin film layer; 4 5 polyimide resin film.

Claims (1)

569656569656 1 · 一種撓性印刷線路板之製 脖槲沪臌幺苴从 , 衣乂万法,係以使用聚醯亞 树月曰膜為基材之由撓性銅面層 之方法,I& ^ 1㈢壓扳製造撓性印刷線路板 i万沄,其特倣在於··包括下述步驟, (a )钱刻該撓性銅面層壓板 刻步驟, 成線路電路之電路蚀 (b )將電路蝕刻完之基板 基板上所形成之線路的間隙間 自羧酸金屬鹽之殘留金屬成分 屬成分去除步驟, 以酸洗處理以去除外露於 之聚醯亞胺樹脂膜表面之來 以將之轉化為羧基的殘留金1 · A kind of flexible printed circuit board made from copper and copper, which is based on the method of using a flexible copper surface layer using a polyurethane film as a substrate, I & ^ 1㈢ The flexible printed circuit board is manufactured by pressing, and the characteristics of the flexible printed circuit board include the following steps: (a) the step of engraving the flexible copper laminate, forming a circuit corrosion of the circuit (b), and etching the circuit The remaining metal component of the metal salt of carboxylic acid is a component removing step between the gaps of the circuit formed on the completed substrate, and is acid-washed to remove the exposed polyimide resin film surface to convert it to a carboxyl group. Residual gold 。經^殘留金屬成分去除步驟完之基板於 C之而溫氣體環境下加熱處理丨〇分鐘至8 〇分鐘,以將外露 於基板上形成之電路的間隙之聚醯亞胺樹脂膜表面作閉環 處理之再閉壞步驟。 2· —種包括以下①至⑤之步驟的直接金屬化法之撓性 印刷線路板之製法,其為經由, ① 聚醯亞胺樹脂膜以鹼處理作醯亞胺環之開環處理, 於表面形成羧基之開環步驟, ② 開壞形成之叛基以酸溶液中和之中和步驟,. After the residual metal component removal step is completed, the substrate is heat-treated under a warm gas atmosphere at a temperature of 0 minutes to 80 minutes to perform a closed-loop treatment on the surface of the polyimide resin film exposed on the gaps of the circuits formed on the substrate. Then close the bad steps. 2 · —A method for manufacturing a flexible printed wiring board including the direct metallization method of the following steps ① to ⑤, which is performed by: ① Polyimide resin film is alkali-treated as a ring-opening treatment of the imine ring, in The ring-opening step of forming a carboxyl group on the surface, ③ 使中和之羧基與含金屬離子之溶液接觸以吸附金屬 成分,於聚醢亞胺樹脂膜表面形成羧酸金屬鹽之金屬離子 吸附步驟, ④將形成於聚醢亞胺樹脂膜表面之羧酸金屬鹽還原以 於聚醯亞胺樹脂膜表面形成金屬薄膜之金屬薄膜形成步 驟,③ contacting the neutralized carboxyl group with a metal ion-containing solution to adsorb metal components, and a metal ion adsorption step of forming a carboxylic acid metal salt on the surface of the polyimide resin film, ④ the carboxyl group formed on the surface of the polyimide resin film A metal thin film forming step of reducing an acid metal salt to form a metal thin film on the surface of a polyimide resin film, 第43頁 569656Page 43 569656 ⑤在形成於聚醯亞胺樹脂膜表面之金 用以經電化學手法所形成電路之銅層的電路 薄膜上,形成 用銅層形成步 侍到之導體層與聚醯亞胺樹脂層構成 層壓板製造撓性印刷線路板之方法,其特徵面 述(a)至(c)各步驟, 亏倣在於.包括下 (a)餘刻該撓性銅面層壓板所形成線路電 刻步驟, 〜电格蚀 (b )電路蝕刻完之基板,以酸洗處理以去除外露於基 板上所形成之線路的間隙間之聚醯亞胺樹脂膜表面之來自 敌酸金屬鹽之殘留金屬成分以將之轉化為羧基的殘留金屬 成分去除步驟, (c)經殘留金屬成分去除步驟完之基板K18(rcs2〇() °C之高溫氣體環境下加熱處理1〇分鐘至80分鐘,以將外露 於基板上形成之電路的間隙之聚醢亞胺樹脂膜表面作閉環 處理之再閉環步驟。 3. —種包括以下①至⑤之步驟的直接金屬化法之撓性 印刷線路板之製法,其為經由, ① 聚醯亞胺樹脂膜以鹼處理作醯亞胺環之開環處理, 於表面形成羧基之開環步驟, ② 開環形成之羧基以酸溶液中和之中和步驟, ③ 使中和之羧基與含金屬離子之溶液接觸以吸附金屬 成分,於聚醯亞胺樹脂膜表面形成羧酸金屬鹽之金屬離子 吸附步驟,⑤ On the circuit film of the copper layer of gold formed on the surface of the polyimide resin film and used to form a circuit through electrochemical methods, a conductor layer and a polyimide resin layer constituting layer formed by a copper layer are formed. The method for manufacturing a flexible printed circuit board by a press plate is characterized by describing each step (a) to (c), which is inferior to that. It includes the following (a) step of electrically engraving the circuit formed by the flexible copper laminate, ~ Electro-lattice etching (b) The substrate after the circuit is etched is treated with acid to remove the residual metal components from the anti-acid metal salt on the surface of the polyimide resin film exposed between the gaps of the lines formed on the substrate. Residual metal component removal step converted to carboxyl group, (c) The substrate K18 (rcs20 (° C) ° C) is subjected to heat treatment in a high temperature gas environment for 10 minutes to 80 minutes after the residual metal component removal step, so as to be exposed on the substrate. The closed circuit of the circuit formed on the surface of the polyimide resin film is then closed again. 3. A method of manufacturing a flexible printed wiring board including a direct metallization method of the following steps ① to ⑤, which is through, ① gather The imine resin film is treated with alkali as the ring-opening treatment of the imine ring. The ring-opening step of forming a carboxyl group on the surface, ② the ring-opened carboxyl group is neutralized with an acid solution and the neutralization step, ③ the neutralized carboxyl group and the A metal ion adsorption step of contacting a solution of metal ions to adsorb metal components, forming a metal salt of a carboxylic acid on the surface of a polyimide resin film, 2169-5304-PFl(Nl).ptc 第44頁 569656 ---案號 911325R7^__年月曰 修正 六、申請專利範圍 ④ 將形成於聚醯亞胺樹脂膜表面之羧酸金屬鹽還原以 於聚醯亞胺樹脂膜表面形成金屬薄膜之金屬薄膜形成步 驟, ⑤ 在形成於聚醯亞胺樹脂膜表面之金屬薄膜上,形成 用以經電化學手法所形成電路之銅層的電路用銅層形成步 驟, 知到之導體層與聚醯亞胺樹脂層構成之雙層撓性銅面 層壓板製造撓性印刷線路板之方法,其特徵在於:包括下 述(a)至(d)各步驟,2169-5304-PFl (Nl) .ptc Page 44 569656 --- Case No. 911325R7 ^ __ Year Month and Amendment VI. Application for Patent ④ Reduce the carboxylic acid metal salt formed on the surface of polyimide resin film to The metal thin film forming step of forming a metal thin film on the surface of the polyimide resin film, ⑤ forming copper for the circuit on the metal thin film formed on the surface of the polyimide resin film to form a copper layer of a circuit formed by an electrochemical method. In the step of forming a layer, the method for manufacturing a flexible printed wiring board with a double-layer flexible copper surface laminate composed of a conductor layer and a polyimide resin layer is known, and includes the following (a) to (d) step, (a)该用直接金屬化法得到之撓性銅面層壓板的預先 加熱之預加熱步驟, (b ) 14刻經預加熱之雙層撓性銅面層壓板形成線路電 路之電路蝕刻步驟, (c )電路蝕刻完之基板,以酸洗處理以去除外露於基 ,上所形成之線路的間隙間之聚醢亞胺樹脂膜表面之來自 屬鹽之殘留金屬成分以將之轉化為羧基的殘留金屬 成分去除步驟, 〇 殘留金屬成分去除步驟完之基板於180 °c至200(a) the pre-heating pre-heating step of the flexible copper-faced laminate obtained by the direct metallization method, (b) the circuit etching step of forming a circuit circuit of the 14-layer pre-heated double-layer flexible copper-faced laminate, (c) The substrate on which the circuit has been etched is treated with pickling to remove exposed metal components on the surface of the polyimide resin film between the gaps of the lines formed on the substrate to convert it to carboxyl groups. Residual metal component removal step, the substrate after the residual metal component removal step is at 180 ° C to 200 =氣體環境下加熱處理1〇至8〇分鐘,以將外露於基 f a :ί ί電路的間隙之聚醯亞胺樹脂膜表面作閉環處理 4. 一種如申請專利範圍第1至3項中任一項撓 之製H 法作基本之備有電鍍層之印刷線路板= Heat treatment in a gas environment for 10 to 80 minutes to close the surface of the polyimide resin film exposed on the gap between the base fa: ί ί circuit as a closed-loop treatment 4. A method as described in any of claims 1 to 3 A tortuous H-method as a basic printed circuit board with plating 2169-5304-PFl(Nl).ptc 第45頁 569656 _案號91132587_年月曰 修正_ 六、申請專利範圍 其乃於電路蝕刻步驟後任意階段設有鍍層處理步驟 者。 5. —種如申請專利範圍第1至4項中任一項所述的撓性 印刷線路板之製造方法所得到之撓性印刷線路板。2169-5304-PFl (Nl) .ptc Page 45 569656 _Case No. 91132587_ Year Month Amendment_ VI. Patent Application Scope It is provided with a plating treatment step at any stage after the circuit etching step. 5. A flexible printed wiring board obtained by the method for manufacturing a flexible printed wiring board according to any one of claims 1 to 4 of the scope of patent application. 2169-5304-PFl(Nl).ptc 第46頁 公告本 年^月屮曰 修正才 申請曰期: 1L Ι/Λ. 分類 、 申請案號:91132587 ^ ^ V\f\ \ (以上各攔由本局填註) 發明專利說明書 π%% 系性印刷線路板〈聚造方法及由此製造方法得到之撓性印刷線路才反 中文 發明名稱 英文 A FLEXIBLE PRATED WIRING BOARD,AND A METHOD PRINTED ffIRING B0ARD OBTAINED THROUGH THE MANUFACTURING 姓名 (中文) 1. 橫田俊子 -- 2. 松嶋英明 3. 土私!^ 姓名 (英文) 1. Y0K0TA, Toshiko 2. MATSUSHIMA, Hideaki 3. DOBASHI, Makoto 發明人 (共4人) 國籍 (中英文) 1.日本JP 2.日本JP 3.日本JP 住居所 (中文) 彳士 HL私 ϋ 士圈沒玉赞上尾市原市i泊三井金屬鑛業股份有限公司總合研究所内 号·曰全玉辱上尾★雇市丨333—2三井金屬論泌股^有i公司總合研究所内 3·曰本國埼玉縣上尾市原市I333-2三井金屬鑛業股份有限公司窥 (英文) 申請人 (共1人) 名稱或 尹名 _(中文)_ 名稱或 姓名 (英文)"Τ1Ί 、中英文) 1.三井金屬鑛業股份有限公司 1. Mitsui Mining & Smelting Co.,Ltd.(三井金屬鉱集株式会社y 日本JP 所所文 居業 一 住營中2169-5304-PFl (Nl) .ptc Announcement on page 46 of this year ^ Month 屮 Amendment before the application date: 1L Ι / Λ. Classification, application number: 91132587 ^ ^ V \ f \ \ (the above reasons Note from this Office) Invention patent specification π %% Printed circuit board (the polymerization method and the flexible printed circuit obtained from the manufacturing method are only in Chinese. A FLEXIBLE PRATED WIRING BOARD, AND A METHOD PRINTED ffIRING B0ARD OBTAINED THROUGH THE MANUFACTURING Name (Chinese) 1. Yokota Toshiko-2. Matsumi Hideaki 3. Tusui! ^ Name (English) 1. Y0K0TA, Toshiko 2. MATSUSHIMA, Hideaki 3. DOBASHI, Makoto Inventors (4 people) Nationality (Chinese and English) 1. Japan JP 2. Japan JP 3. Japan JP Domicile (Chinese) HL 士 HL 私 ϋ ϋ 士 没 不 玉 赞 Uhara, Iwo Mitsui Metals & Mining Co., Ltd. Jade shame on the tail ★ Employment City 丨 333-2 Mitsui Metals Co., Ltd. ^ In the company's general research institute 3. The country I333-2 Mitsui Metals Mining Co., Ltd., Harami, Saitama, Japan (English) Person) name or Yin name _ ( (Text) _ Name or name (English) " Τ1Ί, Chinese and English) 1. Mitsui Mining & Mining Co., Ltd. 1. Mitsui Mining & Smelting Co., Ltd. In a camp 日本國東京都品川區大崎1 丁目11番1號(本地址與前向責局者相同)No. 1, 1-chome, Osaki, Shinagawa-ku, Tokyo, Japan (this address is the same as the person who was previously responsible)
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