TW568790B - Hollow microneedle array and method for fabricating the same - Google Patents

Hollow microneedle array and method for fabricating the same Download PDF

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TW568790B
TW568790B TW92109431A TW92109431A TW568790B TW 568790 B TW568790 B TW 568790B TW 92109431 A TW92109431 A TW 92109431A TW 92109431 A TW92109431 A TW 92109431A TW 568790 B TW568790 B TW 568790B
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patent application
item
manufacturing
array
grain
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TW92109431A
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TW200422067A (en
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Shyuan-Fang Chen
Shu-Chin Chou
Shinn-Horng Yeh
Yun-Liang Yang
Jia-Ying Yan
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Ind Tech Res Inst
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Abstract

A method for fabricating hollow microneedle array is proposed, which includes preparing a wafer layer having a plurality of peaks with predetermined gradient for coating a photoresist layer on the surface of the peaks. Then, a set of vertical tubules whose tips are corresponding to the gradient of the peaks are defined on the photoresist layer to make the opening of the tips entirely submissive to the peaks. Thereafter, nanocrystalline electroplating metal material is electroformed onto the photoresist layer to fill into each vertical tubule. While the wafer layer and the photoresist layer have been removed, a hollow microneedle array is finished. Fabrication of microneedle array by means of semiconductor processes can provide the section of the tips of microneedle array with specific angle in a hollow design. Thereby, the needle can easily be penetrated into skin for beneficially sampling and performing transdermal delivery of drug, body fluid or biological molecules and the like.

Description

568790 五、發明說明(l) —- 【發明所屬之技術領域】·· 本發明關於一種可穿透表皮層(corneum)及上皮層 (Epidermis),而不會傷及真皮層(Dermis)之經皮傳 輸(Transdermal Delivery)裝置之製造方法及其結構, 尤指一種從皮下注射藥物及取樣體液時,能將組織傷害性 以及疼痛感降至最低之微米中空針頭陣列(Micr〇needie Array)製造方法及其結構。 【先前技術】:568790 V. Description of the invention (l) —- [Technical field to which the invention belongs] ... The present invention relates to a kind of penetrable epidermal layer (corneum) and epidermal layer (Epidermis) without harming the dermis (Dermis) Manufacturing method and structure of transdermal delivery device, especially a micron hollow needle array (Micrneenee Array) manufacturing method capable of minimizing tissue trauma and pain when injecting drugs and sampling body fluids from the skin And its structure. [Prior art]:

在各種藥物傳輸方法中,最常採用的方式係將藥物直 接注入皮膚施行皮下注射(Intracutane〇us InjectiQn )。人體皮膚構造由外至内分別為死細胞及老化角質構成 之表皮層(Corneum)、富含水分與細胞間液之上皮層 (Epidermis),再而才是血管及神經遍佈之真皮層曰 (Dermis^,惟傳統針頭尺寸較大(一般大於'5〇&米 ),為使藥物快速進入血流,針頭刺入端往往深及皮膚底 層,導致血管及神經末梢受損而令患者產生出血以及疼痛 感。尤其’在糖尿病(Diabetes)治療方面,由於糖尿病 患者需要經常性地測試血液中的血糖濃度並且注射騰島 素,每曰施以皮下注射的次數相當可觀,故醫界若無法開Among the various methods of drug delivery, the most common method is to inject the drug directly into the skin for subcutaneous injection (Intracutaneus InjectiQn). The skin structure of the human body consists of the epidermal layer (Corneum), the moisture-rich and intercellular fluid epithelium (Epidermis), which are composed of dead cells and aging cuticles from the outside to the inside, and then the dermis layer with blood vessels and nerves. ^, But the traditional needle size is large (generally larger than '50 & meters), in order to make the drug quickly enter the bloodstream, the needle penetration end is often deep into the skin bottom, resulting in damage to blood vessels and nerve endings and bleeding in patients and Pain. Especially in the treatment of diabetes (Diabetes), because the diabetic patients need to regularly test the blood glucose concentration and inject Tengdaosu, the number of subcutaneous injections per day is quite considerable, so if the medical profession cannot prescribe

發一種無痛、低侵襲性的針注方式,患者往往會懼怕打針 而影響血糖控制成效。 為此,喬治亞技術學院亨利等人(Henry et· al.) 於文獻中發表一種”經皮傳輸藥物之微米機械針頭 (Micromachined Needles for the TransdermalWhen a painless, low-injection injection is made, patients are often afraid of injections that affect blood glucose control. To this end, Henry et. Al. Of Georgia Institute of Technology published in the literature a "Micromachined Needles for the Transdermal

568790 五、發明說明(2)568790 V. Description of Invention (2)

Del i very of Drugs) ’’,如第6圖所示,此種微米針頭陣 列(Microneedle Array)的針頭刺入端極為細小,直徑 約為15至4 0標準醫療規格(standard Medical Gauge), 長度介於5至1 0 0微米之間;同時,此種針頭亦可以傳輸包 含液劑、溶液、膠劑或水膠劑(H y d r 〇 g e 1)等各式醫療劑 型。 如圖所示,微米針頭陣列優於傳統皮下注射針頭之 處,在於微米針頭陣列可以製-造極其細小的針頭刺入端, 使藥物注入皮膚時僅刺穿表皮層及部分上皮層,不會傷及 血管和神經密佈的真皮層,以免患者打針時出血或有疼痛 感產生。 然而’目$的微米針頭陣列(M i c r ο n e e d 1 e A r r a y) 受限於製程技術,如美國專利第6,3 7 9,3 2 4號案 ’’Intracutaneous Microneedle Array Apparatus·’ 及第 6,334,856號案”Microneedle Devices and Methods ofDel i very of Drugs ", as shown in Figure 6, the microneedle array (Microneedle Array) has a very small puncture end, with a diameter of about 15 to 40 standard medical gauges, and a length Between 5 and 100 microns; at the same time, this needle can also transmit various medical dosage forms including liquids, solutions, glues or hydrogels (Hydrage 1). As shown in the figure, the micron needle array is superior to traditional hypodermic needles in that the micron needle array can make extremely small needle penetration ends, so that when the drug is injected into the skin, it only penetrates the epidermal layer and part of the epithelial layer, and will not Damage the blood vessel and nerve dense dermis to prevent bleeding or pain during the injection. However, the "micrometer needle array (Micr ο need 1 e Array)" is limited to process technology, such as US Patent Nos. 6, 3 7 9, 3 2 4 "Intracutaneous Microneedle Array Apparatus" and 6,334,856 "Microneedle Devices and Methods of

Manufacture and Use thereof’丨戶斤揭示,只能製造出三 種針頭;如第7圖所示,第一種針頭(a)為尖銳實心針 頭,其優點在於皮膚穿透性佳,但實心構造無法提供物質 通過,故難以取樣或送藥而不具實用價值;為達到藥物傳 輸目的,往後又發展出中空針頭,如第7圖中(B)及(c )所示。中空針頭包括圓錐平頭型中空針頭(B)以及圓 肉狀平頭中空針頭(C)等,此兩種中空針頭雖然便於取 樣及送藥,但是,針頭刺入端平鈍,因此,針頭不易穿透 皮膚而造成施打困難。Manufacture and Use thereof 'revealed that only three types of needles can be manufactured; as shown in Figure 7, the first type of needle (a) is a sharp solid needle, which has the advantage of good skin penetration, but the solid structure cannot provide The material passes, so it is difficult to sample or send medicine without practical value; in order to achieve the purpose of drug delivery, a hollow needle was developed later, as shown in (B) and (c) in Figure 7. Hollow needles include conical flat-shaped hollow needles (B) and round-shaped flat-shaped hollow needles (C). Although these two types of hollow needles are convenient for sampling and drug delivery, the needles are dull at the insertion end, so the needles are not easy to penetrate. Difficult to apply to the skin.

/yv 發明說明(3) ____ 為改善中空針頭的皮声穿 、破螭、陶瓷戒其他非^ ,業者言試以如矽、石 米而外徑小於! 00微米之微料’製作出長度小於250 璃等材料製作的針頭雖:可以:員J車列。以矽、石英或 的延展性差,盔法因應血管#易刺穿外皮,但是針頭 引發排斥等問題。而若改 性且易脆裂而殘留於人體, 製作微米中空針頦,雖可使針藤錦録合金等金屬材質 錄、録等金屬容易引發人體過敏了 ^好的延展性,但是 期埋設於皮下時,針頭表面 ^上若需要將針頭長 致患者針刺部位出現不適。 的錄離子及銘離子往往導 目如文獻顯示在所有金屬巾 不會產生不適症狀“指生物相容:日;:停留在人體内最 最高)的金屬,第一是白金,;= matabimy 以白金或黃金製作,價格極5,f:=用惟:頭整體 白金或黃金,來提高針頭對於表面鍍設-φμ 、人體的相容性。/ yv Description of the invention (3) ____ In order to improve the skin penetration, breakage, ceramics, or other non- ^ of hollow needles, the industry has tried to use silicon, stone, and the outer diameter is less than! 00 micron micro-materials' to produce needles made of materials less than 250 glazing and other materials Although: Yes: member J car train. Due to the poor ductility of silicon, quartz or silicon, the helmet method is easy to pierce the skin due to blood vessels, but the needle causes rejection and other problems. And if it is modified and easily brittle and remains in the human body, the production of micron hollow acupuncture can make metal materials such as needle rattan brocade alloy and other metals easily cause human allergies. Good ductility, but buried in Subcutaneously, if the needle needs to be longer on the surface of the needle, the patient's acupuncture site will be uncomfortable. The recorded ions and ions are often eye-catching, such as the literature shows that all metal towels will not produce discomfort symptoms. "Refers to biocompatible: day;: highest in the human body), the first is platinum,; = matabimy to platinum Or gold, the price is 5, f: = use only: the whole platinum or gold, to improve the compatibility of the needle for surface plating -φμ, human body.

…、'而,以傳統電錢方法(如D 黃金層,鍍層表面各粒子(指白:c pm敷錢白金或 的晶粒(Grain size)粒徑很大、,1金及;;s金粒子) 有空隙,而能容許被鍍物(^ β導晶粒與晶粒之間存 子捡階雄山日鎳質針頭)表面游離的锃籬 出…’只有增加白金層或黃金層的2才 、是故,為避免患者實施i以:r:;高。、 並解決針頭皮膚穿透性、藥物傳t六w 血或疼痛, 1寻輸忐力、材質延展性、以…, And, with traditional electric money methods (such as D gold layer, each particle on the surface of the coating (referring to white: c pm gold or grain size), the size is 1 gold and; s gold Particles) have gaps, and can allow the surface of the object to be plated (^ β-conducting grains and crystal grains to pick up male Xiongshan Ni nickel needles). 'Only by adding 2 of the platinum or gold layer Therefore, in order to prevent patients from implementing: r :; high., And to solve needle skin penetrability, drug transmission, blood or pain, 1 to find power, material ductility, and

568790568790

五、發明說明(4) 及生物相谷性寺問題,孝界 問題之微米中空針頭陣列製 【内容】: 本發明之主要目的在於 設計之針頭刺入端,以於皮 益且提供體液或藥物傳輸之 其結構。 迫切需要開發一種可解決上述 造方法。 提供一種具傾斜切角以及中空 下注射時可輕易地刺入皮膚, 微米中空針頭陣列製造方法及V. Description of the invention (4) Micron hollow needle array system for the problem of biological phase valley sex temple and filial piety problem [Content]: The main purpose of the present invention is to design the needle piercing end for skin benefit and provide body fluids or drugs The structure of transmission. There is an urgent need to develop a method that can solve the above problems. Provided are a method for manufacturing a micron hollow needle array with an oblique cut angle and a skin that can be easily penetrated into the skin during injection.

本^月之另 目的在於提供一種增加鍍金層晶粒排列 的緻密性,以減小相鄰金粒子間之晶粒孔隙,避免被鍍物 表面的鎳離子鑽出孔隙,而提高針頭的生物相容性 (Biocompatabi 1 1 ty)之微米中空針頭陣列製造方法及其 結構。 本發明之再一目的在於提供一種避免患者經皮注射時 發生出血、疼痛,以及組織傷害性,俾減少經常性地需要 針注之患者因心理障礙而干擾療程進行之微米中空針頭陣 列製造方法及其結構。Another purpose of this month is to provide a denser grain arrangement of the gold-plated layer to reduce the grain pores between adjacent gold particles, avoid nickel ions from drilling the pores on the surface of the plated object, and improve the biological phase of the needle. Manufacturing method and structure of capacitive (Biocompatabi 1 1 ty) micron hollow needle array. Still another object of the present invention is to provide a micron hollow needle array manufacturing method for avoiding bleeding, pain and tissue damage during percutaneous injection of patients, and reducing patients who frequently need needle injections because of psychological disturbances that interfere with the progress of treatment. Its structure.

為達成上述及其他目的,本發明之微米中空針頭在不 傷及真皮層(血管及神經密佈於真皮層)的情況下,可提 供有關藥物、體液或其他生物分子(Biological Molecule)經皮傳輸及取樣,以免患者進行皮下注射時發 生出血或疼痛,並且減少針頭對於針注部位的組織傷害 性。該微米中空針頭係為由多數直立管孔連接而形成之微 米針頭陣列(Microneedle Array),該直立管孔具有一 與皮膚接觸之開口部,支撐該開口部並且提供相鄰開口部In order to achieve the above and other objectives, the micron hollow needle of the present invention can provide related drugs, bodily fluids or other biological molecules (Biological Molecule) for percutaneous transmission without harming the dermis (blood vessels and nerves are densely packed in the dermis). Sampling to prevent bleeding or pain during subcutaneous injections, and to reduce the needle's tissue damage to the injection site. The micron hollow needle is a microneedle array formed by connecting a plurality of upright tube holes. The upright tube hole has an opening that contacts the skin, supports the opening and provides adjacent openings.

568790 五、發明說明(5) 連接之管底部,以及貫穿該開口部及管底部之管心部所構 成,其中,該開口部前端形成一尖銳斜角,且該斜角與水 平面相交一預設角度。惟該微米中空針頭係採陣列 (Array)配置批次製作,其製造方法包含以下步驟: 預備一晶圓層,其上形成有複數個具預定傾斜度之峰 部; 於該峰部表面佈覆一阻钱層(Etch Stop)或種子層 (seed layer); 於該阻蝕層上覆蓋一第一光阻層; 顯影該第一光阻層,以定義出複數個直立管孔,該管 _ 孔前端係順應該峰部傾斜面形成,以使靠近晶圓層之管孔 開口面完全貼合於該阻蝕層; 於該第一光阻層表面佈覆一第二光阻層並予以顯影, 使得該第二光阻層剝離後,位於該直立管孔管心部之第一 光阻層厚度大於管孔外部之第一光阻層厚度; 電鑄一奈米晶粒電鑄金屬(如奈米晶粒電鑄鎳)至該 第一光阻層,以填滿並連接各直立管孔;以及 移除該晶圓層、阻蝕層及第一光阻層,俾形成金屬針 頭陣列。 本發明另一實施例之微米中空針頭陣列製造方法,亦 是運用晶圓及光阻佈覆等半導體製程技術來定義針頭陣列 前端的傾斜度,其不同處在於金屬針頭陣列的成形,並非 直接以奈米晶粒電鑄金屬充填光阻層,而是將成型的直立 管孔翻模成母模後,再以奈米晶粒金屬電鑄入母模,此製568790 V. Description of the invention (5) The bottom of the connected pipe and the core portion penetrating the opening and the bottom of the pipe, wherein the front end of the opening forms a sharp oblique angle, and the oblique angle intersects the horizontal plane by a preset angle. However, the micron hollow needle is fabricated in an Array configuration. The manufacturing method includes the following steps: preparing a wafer layer on which a plurality of peaks with a predetermined inclination are formed; and coating the surface of the peak A money stop layer (Etch Stop) or a seed layer; a first photoresist layer is covered on the resist layer; the first photoresist layer is developed to define a plurality of upright tube holes, the tube_ The front end of the hole is formed in accordance with the inclined surface of the peak, so that the opening surface of the tube hole close to the wafer layer completely fits the resist layer; a second photoresist layer is coated on the surface of the first photoresist layer and developed. So that after the second photoresist layer is peeled off, the thickness of the first photoresist layer at the core of the upright tube hole is greater than the thickness of the first photoresist layer outside the tube hole; Nano-grain electroformed nickel) to the first photoresist layer to fill and connect the vertical tube holes; and remove the wafer layer, the resist layer and the first photoresist layer to form a metal needle array. The method for manufacturing a micron hollow needle array according to another embodiment of the present invention also uses semiconductor process technologies such as wafers and photoresist coating to define the inclination of the front end of the needle array. The difference lies in the formation of the metal needle array, not directly The nano-grain electroformed metal is filled with a photoresist layer, but the formed upright tube hole is turned into a master mold, and then the nano-grain metal is electroformed into the master mold.

17163工研院.ptd 第11頁 568790 五、發明說明(6) 程方法包含以下步驟: 預備一晶圓; 於該晶圓上佈覆一光阻層,並以灰階光罩等方式將該 光阻層製成多數具預定傾斜度之峰部; 垂直蝕刻該光阻層,以定義出複數個開口面具預定傾 斜度之中空直立管孔陣列; 翻模該中空直立管孔陣列形成一母模; 蝕除該中空直立管孔陣列;以及 電鑄一奈米晶粒電鑄金屬至該母模,以於脫模後形成 金屬針頭陣列。 另外,本發明之微米中空針頭陣列製造方法其他兩實 施例,係利用快速原型技術(R a p i d P r 〇 t 〇 t y p i n g)或雷 射削切方法(L a s e r C u 11 i n g)將樹脂定義出複數個開口 面具預定傾斜度之中空直立管孔陣列,再將該直立管孔翻 模,並於母模成型後以溶劑溶除樹脂;之後,以電鑄方法 將奈米晶粒金屬鑄入母模,亦可形成金屬針頭陣列。 為免以奈米晶粒電鑄鎳製作的微米中空針頭陣列造成 人體過敏,依上述製法完成的金屬針頭陣列表面可再敷鍍 一層奈米晶粒電鍵金(如白金、黃金及其合金等)或於針 頭陣列表面浸潰(D i pp i ng) —層生物相容性佳之聚合 物,以形成隔離層阻擋針頭陣列表面的金屬鎳游離出來。 運用奈米晶粒(Nanocrystalline)電鑄方法製作鍵 金層,金屬晶粒粒徑很小,而且晶粒排列極為緻密,故相 較於傳統電鍍方法,奈米晶粒電鑄技術可以縮小晶粒孔17163 Institute of Industry and Technology.ptd Page 11 568790 V. Description of the invention (6) The process method includes the following steps: preparing a wafer; coating a photoresist layer on the wafer, and using a gray scale mask, etc. The photoresist layer is made of a plurality of peaks with a predetermined inclination; the photoresist layer is etched vertically to define a plurality of opening mask hollow riser hole arrays with a predetermined inclination; the hollow riser hole array is flipped to form a female mold Eroding the hollow riser hole array; and electroforming a nano-grain electroformed metal to the master mold to form a metal needle array after demolding. In addition, the other two embodiments of the method for manufacturing a micron hollow needle array of the present invention use a rapid prototyping technology (Rapid Pr 〇t 〇typing) or a laser cutting method (Laser Cu 11 ing) to define the resin into a complex number Hollow opening tube hole array with a predetermined inclination of the opening masks, and then mold the vertical tube holes, and then dissolve the resin with a solvent after the master mold is formed; thereafter, the nano-grain metal is cast into the master mold by an electroforming method. , Can also form a metal needle array. In order to avoid the human allergy caused by the micron hollow needle array made of nano-grain electroformed nickel, the surface of the metal needle array completed according to the above manufacturing method can be coated with a layer of nano-grain electro-bonded gold (such as platinum, gold and its alloy, etc.). Or dip pp ng on the surface of the needle array-a layer of biocompatible polymer to form an isolation layer to block the release of metal nickel on the surface of the needle array. The nanocrystalline electroforming method is used to make the bond gold layer. The metal grain size is very small, and the grain arrangement is extremely dense. Therefore, compared with the traditional electroplating method, the nanograin electroforming technology can reduce the grain size. hole

17163工研院.ptd 第12頁 568790 五、發明說明(7) 隙,避免鍍金層下方的鎳離子游離出來而彥生生物相容性 問題。 再一方面,運用半導體製程技術將微米針頭陣列 (Microneedle Array)的針頭刺入端設計成傾斜切角, 得於注射時輕易地刺入皮膚,而中空型態的針頭亦能為流 體物質提供一傳送通道,以供藥物、體液或其他生物分子 經皮傳輸及取樣,使患者在未感疼痛及出血的情形下實施 注射。 【實施方式】: 以下即以具體實施例配合所附圖式詳細說明本發明之 微米中空針頭陣列(Hollow Microneedle Array)製造方 法及其結構,惟下列圖式僅簡單繪示與實施例有關的元件 數塁及種類’各圖式間具有相同元件者,概以同一標號 7Γ: 〇 ' 本發明之微米中空針頭陣列係在不傷害真皮層血管與 神經的情況下,提供有關藥物、體液或其他生物分子 一 (Bi〇l〇gicai Molecule)經皮傳輸及取樣,以免77串者寺 :日:產生出血或疼痛,it且減少針頭對於針注部;的纽: 輪害性。該微米中空針頭係為由多數直立总 、為 之微米針頭陣列(M i c r ο n e e d 1 e A r r a y),外士妾〃升/成 -JL- . 该直立營孔且 有一與皮膚接觸之開口部,支撐該開口部 /、 口部連接之管底部,以及貫穿該開口部』;;;供;鄰開 所構成,其中,該開口部前端形成一尖 ^。之&〜 與水平面相交-預設角度。 太銳斜角’且該斜角17163 Institute of Industry and Technology.ptd Page 12 568790 V. Description of the invention (7) Gap to avoid the release of nickel ions under the gold plating layer to cause biocompatibility problems. On the other hand, the semiconductor needle technology is used to design the microneedle array's needle penetration end into an oblique cut angle, which can easily penetrate the skin during injection, and the hollow needle can also provide a fluid substance. A delivery channel for the transdermal delivery and sampling of drugs, body fluids, or other biomolecules, enabling patients to perform injections without feeling pain and bleeding. [Embodiment]: The following is a detailed description of the manufacturing method and structure of the Hollow Microneedle Array of the present invention with specific embodiments and the accompanying drawings. However, the following drawings only briefly illustrate the elements related to the embodiments. Numbers and types 'Those with the same elements between the drawings are given the same reference number 7Γ: 〇' The micron hollow needle array of the present invention provides related drugs, body fluids or other organisms without harming the blood vessels and nerves of the dermis. Molecules (Bi0gicai Molecule) are transdermally transported and sampled to avoid 77 stigmata temples: day: bleeding or pain occurs, it and reduce the needle to the injection part; new: round damage. The micron hollow needle is an array of micron needles (Micr ο need 1 e Aray) which is upright, and the literary liter rises / forms -JL-. The vertical camp hole has an opening that contacts the skin , The bottom of the tube supporting the opening / connecting the mouth, and the opening through the opening ";;; the supply is formed adjacent to the opening, wherein the front end of the opening forms a pointed ^. Of & ~ Intersect with the horizontal plane-preset angle. Too sharp bevel ’and that bevel

568790 五、發明說明(8) ^~ 該微米中空針頭採用陣列(Array)配置批次製 現即以第1A至1圃、第3植3H圖、第值4ρ圖及第 5F圖分別敘述微米中空針頭陣列的製造方法之各項實^至 例0 第一實施例: 如第1级1BS1/斤示,預備一晶圓層1 ( Wafer),誃曰 圓層1可㈣' Kb秒或坤化鎵等材f製成,其具有^ 晶面1 0 ;於該晶面1 0上以蝕刻或磨蝕方法開設多數v形凹 溝1 1 ( V-groove),每—v形凹溝丨丨與水平面間維持具預 定角度之傾斜面110。該傾斜面11〇角度介於15至6〇度之、 間’以本實施例為例,較佳者如第丨β圖之㊀所示,利用矽 晶體排列的特性’其蝕刻的傾斜角度為5 4 · 7 4度。 而後’如第ic圖所示,以濺鍍(Sputtering)或無電 鍍(Electroless Plat ing)方法在該晶圓層1表面敷設〆 金屬材質之導電層2(如種子層,Seed Layer),或形成 一電漿蝕刻之阻蝕層2 ( Etch Stop),其中,該導電層2 或阻蝕層2之厚度以不影響v形凹溝丨丨形成預定傾斜角度者 為佳。 接著,如第1 D及1 E圖所示,於該覆有導電層2或阻蝕 層2之晶圓1表面塗佈一光阻層3 (本實施例中稱為第一光 阻層1),該光阻層3可為乾膜、濕膜及其他材質所構成, 於本實施例中以負光阻(Negative ph〇t〇resist)較佳, 其厚度係大於1 5 0微米以上。 之後,如第1E圖所示,於該光阻層3上進行曝光、顯568790 V. Description of the invention (8) ^ ~ The micron hollow needles are manufactured in an array (Array) configuration, that is, the micron hollows are described by the 1A to 1 garden, the 3rd plant 3H diagram, the 4th diagram, and the 5F diagram. Various aspects of the manufacturing method of the needle array ^ to Example 0 First embodiment: As shown in the first level 1BS1 / jin, a wafer layer 1 (wafer) is prepared. It is made of gallium and other materials f, which has a crystal plane 10; a plurality of v-grooves 1 1 (V-groove) are opened on the crystal plane 10 by etching or abrasion. An inclined surface 110 having a predetermined angle is maintained between the horizontal planes. The angle of the inclined surface 10 is between 15 and 60 degrees. Taking this embodiment as an example, it is better to use the characteristics of the arrangement of silicon crystals as shown in Fig. 丨 β. The inclined angle of the etching is 5 4 · 7 4 degrees. Then, as shown in FIG. Ic, a conductive layer 2 (such as a seed layer) made of a metal material is deposited on the surface of the wafer layer 1 by sputtering or electroless plating method, or formed. A plasma etching etching stop layer 2 (Etch Stop), wherein the thickness of the conductive layer 2 or the etching stop layer 2 is preferably not to affect a predetermined inclination angle of the V-shaped groove. Next, as shown in FIGS. 1D and 1E, a photoresist layer 3 (referred to as the first photoresist layer 1 in this embodiment) is coated on the surface of the wafer 1 covered with the conductive layer 2 or the resist layer 2. ), The photoresist layer 3 may be composed of a dry film, a wet film, and other materials. In this embodiment, a negative photoresist (Negative photoresist) is preferred, and its thickness is greater than 150 micrometers. Thereafter, as shown in FIG. 1E, exposure and development are performed on the photoresist layer 3.

568790 五、發明說明(9) 影等製程,以定義出微米針頭陣列4管壁的位置而形成複 數個直立管孔4 0,各直立管孔4 0前端係順應該V形凹溝1 1 傾斜面1 1 0開設,以使接近晶圓層1之管孔4 0開口面4 0 0完 全貼合於該導電層2或阻蝕層2表面。以本實施例為例,本 發明之直立管孔4 0為開設成中空型態,除管壁4 0 1本身蝕 空以供後續電鑄製程金屬充填外,管心部4 0 2與管孔4 0外 部均有光阻層3分布,且該管心部光阻層3的厚度與管孔4 0 外部的光阻層3厚度一致。 而後,如第1 F及1 G圖所示,於該光阻層3表面佈覆一 層第二光阻層(未圖示)並施以曝光顯影,以削減管孔4 0 外部的光阻層3厚度,使管心部4 0 2光阻層3之高度超出該 管孔4 0外部之光阻層3表面。之後,蝕除該第二光阻層, 復利用如奈米晶粒(N a η 〇 c r y s t a 1 1 i n e)電鑄鎳、奈米晶 粒電鑄鈷、奈米晶粒電鑄鎳鈷合金等奈米晶粒電鑄金屬5 填鑄該光阻層3,使中空直立管孔4 0管壁4 0 1以及管孔4 0外 部表面形成有奈米晶粒電鑄金屬5 ;惟該管心部4 0 2光阻層 3之厚度係高出該管孔4 0外部之光阻層3,因此電鑄奈米晶 粒金屬時,管心部4 0 2不會為該電鑄金屬5遮覆,以確保微 米中空針頭4的管心部4 0 2暢通。 再而,如第1Η圖所示,完全蝕刻掉該晶圓層,並以顯 影劑溶除該光阻層,以完全裸露該奈米晶粒電鑄金屬5, 惟電鑄後若發現直立管孔4 0的管心部4 0 2出現阻塞時,亦 可增加研磨步驟使管孔4 0重新顯露,以製作出微米中空針 頭陣列4。568790 V. Description of the invention (9) In the process of shadowing, etc., a plurality of upright tube holes 40 are formed by defining the position of the tube wall of the micron needle array 4 to form a plurality of upright tube holes 40. The front end of each upright tube hole 40 conforms to the V-shaped groove 1 1 inclined The surface 1 1 0 is opened so that the opening surface 4 0 of the tube hole 40 close to the wafer layer 1 completely adheres to the surface of the conductive layer 2 or the corrosion resistance layer 2. Taking this embodiment as an example, the upright tube hole 40 of the present invention is opened into a hollow shape. In addition to the tube wall 40 1 itself being eroded for metal filling in the subsequent electroforming process, the tube core portion 40 and the tube hole The photoresist layer 3 is distributed outside 40, and the thickness of the photoresist layer 3 at the core is the same as the thickness of the photoresist layer 3 outside the tube hole 40. Then, as shown in Figs. 1F and 1G, a second photoresist layer (not shown) is coated on the surface of the photoresist layer 3 and exposed and developed to reduce the photoresist layer outside the tube hole 40. The thickness of the photoresist layer 3 of the tube core portion 402 exceeds the surface of the photoresist layer 3 outside the tube hole 40. After that, the second photoresist layer is etched and reused, such as nano-grain (N a η ocrysta 1 1 ine) electroformed nickel, nano-grain electroformed cobalt, nano-grain electroformed nickel-cobalt alloy, etc. Nano-grain electroformed metal 5 fills the photoresist layer 3 so that the hollow upright pipe hole 40, the pipe wall 401, and the outer surface of the pipe hole 40 are formed with nano-grain electroformed metal 5; The thickness of the photoresist layer 3 of the part 4 2 is higher than that of the photoresist layer 3 outside the tube hole 40. Therefore, when the nano-grain metal is electroformed, the core part 4 2 will not cover the electroformed metal 5. Cover to ensure that the core portion 4 2 of the micron hollow needle 4 is unobstructed. Furthermore, as shown in FIG. 1, the wafer layer is completely etched away, and the photoresist layer is dissolved with a developer to completely expose the nano-grain electroformed metal 5, but if an upright tube is found after electroforming When the tube core 40 of the hole 40 is blocked, a grinding step may be added to expose the tube hole 40 again to make a micron hollow needle array 4.

17163工研院.ptd 第15頁 568790 五、發明說明(ίο) ^~ -——-- 如第2A圖所示,以奈来a軺+ + 頭 陣列,為提高其生物相容鎳製米中空針 於針頭陣列4表面形成一層夺平日:上述衣=疋成後,另 仓、金合金、白金合金或Κ^;日粒,鑄金6(如純金、白 (Dipping)塗佈一層生物相容性佳之聚合物, ,鎳離子游離的隔離層。該聚合物適用種類包括石夕膠 j s^llcone Rubber)、聚亞胺龜(p〇iyurethane)及過 鼠 I 聚合物(PerflU0rinated p〇lymer)等材料。 運用奈米晶粒電鑄方法製作鍍金層6,如第2β圖所 示,得到的金屬晶粒粒徑很小(通常小於1〇〇奈米(nm) ),而且/曰粒排列極為緻密(如圖中(a) ( b)所示, (a)表示習知電鍍方法獲得的金屬晶粒,(幻表示本發 I之,米晶粒電鑄金屬晶粒);故相較於傳統電鍍方法, 奈米晶粒電鑄技術可以縮小晶粒孔隙,避免鍍金層下方的 被鑛物(如奈米晶粒電鑄鎳材質之針頭陣列4)鎳離子游 離出末而k成患者不適,以克服傳統鑛金層生物相容性不 足的缺失。 ^ 再者’如第2 A及2 B圖所示,運用半導體製程技術將微 米針頭陣列4的刺入端設計成傾斜切角,可於注射時輕易 地刺入皮膚,而中空型態的針頭設計更可為流體物質提供 一傳送通道,提供藥物、體液或其他生物分子經皮傳輸及 取樣,而使針頭更具實用價值。 農_:^__實_施例: 第3A圖至第3H圖係表示本發明之微米中空針頭陣列製17163 Industrial Research Institute.ptd Page 15 568790 V. Description of the invention (ίο) ^ ~ -——-- As shown in Figure 2A, the Nile a 轺 + + head array is used to improve its biocompatible nickel rice. Hollow needles form a layer on the surface of the needle array 4 for weekdays: after the above clothing is formed, another warehouse, gold alloy, platinum alloy, or KK ^; grains, cast gold 6 (such as pure gold, white (Dipping) coated with a layer of biological phase A polymer with good capacitance, a free layer of nickel ions. Applicable types of polymer include stone rubber (JS ^ llcone Rubber), polyimide turtle (Polyurethane), and perfomer polymer (PerflU0rinated polymer) And other materials. The nano-grain electroforming method is used to make the gold-plated layer 6. As shown in Figure 2β, the obtained metal grains have a small particle size (usually less than 100 nanometers (nm)), and the particle arrangement is extremely dense ( As shown in (a) and (b) of the figure, (a) represents the metal grains obtained by the conventional electroplating method, (magic means the grain I, the rice grains are electroformed metal grains); therefore, compared with traditional plating Method, the nano-grain electroforming technology can reduce the grain pores and avoid minerals (such as nano-grain electro-cast nickel needle arrays 4) under the gold plating layer, and nickel ions will be released and the patient will be uncomfortable to overcome The lack of inadequate biocompatibility of the traditional gold deposits. ^ Furthermore, as shown in Figures 2A and 2B, the semiconductor chip technology is used to design the puncture end of the microneedle array 4 into an oblique cut angle. The needle can be easily penetrated into the skin, and the hollow needle design can provide a transmission channel for fluid substances, and provide percutaneous transmission and sampling of drugs, body fluids or other biomolecules, making the needle more practical value. Agriculture _: ^ _ _ 实 _ 例 Example: Figures 3A to 3H show the micron of the present invention Hollow needle array system

568790 五、發明說明(11) 造方法之另一實施例。此方法亦是運用晶圓及光阻佈覆等 半導體製程技術來定義針頭陣列前端的傾斜度,其不同於 前述實施例之處在於金屬針頭陣列的成形方式,並未直接 以奈米晶粒金屬充填光阻層,而是將成型的直立管孔翻模 成母膜後,復用奈米晶粒電鑄金屬鑄入母膜。以下即配合 第3 A至3 Η圖詳細說明本發明製造方法之各步驟: 首先,如第3Α及3Β圖所示,預備一晶圓層1,該晶圓 層1具有一晶面1 〇,且晶圓層1可由矽、二氧化矽等材質製 作,或以玻璃、陶瓷等取代。於該晶面1 0上塗佈一層具預 定厚度之光阻層3,該光阻層3可為乾膜、濕膜或其他材質 所構成,本實施例以乾膜為佳,其乾膜覆蓋厚度約介於 1 0 0微米至3 0 0微米之間。 接著,如第3C圖所示,以灰階光罩(Gray Scale Mask)或垂直移動式曝光機構(Elevating Exposure Sy stem)顯影去除部分光阻層3,並由晶面1 0漸層拉高剩 餘光阻層3作成斜角,使該光阻層3與晶面1 0間維持具預定 角度之傾斜面3 0 0。該傾斜面角度介於1 5至6 0度之間。 而後,如第3D圖所示,以極單向性#刻法 (Extreme 1y Anisotropic Etch),如電感搞合電漿 (Inductively-coupled-plasma, ICP) # 刻技術進行垂 直單一方向蝕刻來定義出微米針頭陣列4管壁的位置,以 形成具有複數個直立管孔4 0之直立管孔陣列4 (與微米中 空針頭陣列4型態完全吻合,故以相同元件符號表示), 該直立管孔陣列4係由管孔4 0前端具預定斜角之開口部568790 V. Description of the invention (11) Another embodiment of the manufacturing method. This method also uses semiconductor process technologies such as wafers and photoresist coatings to define the inclination of the front end of the needle array. It is different from the previous embodiment in that the metal needle array is formed in a way that does not directly use nano-grain metal. After filling the photoresist layer, the formed upright tube hole is turned into a mother film, and then nanometer grain electroformed metal is reused and cast into the mother film. The following is a detailed description of each step of the manufacturing method of the present invention in conjunction with Figures 3A to 3: First, as shown in Figures 3A and 3B, a wafer layer 1 is prepared, and the wafer layer 1 has a crystal plane 10, The wafer layer 1 may be made of silicon, silicon dioxide, or other materials, or replaced by glass, ceramic, or the like. A photoresist layer 3 having a predetermined thickness is coated on the crystal plane 10, and the photoresist layer 3 may be made of a dry film, a wet film, or other materials. In this embodiment, a dry film is preferred, and the dry film covers The thickness is between 100 microns and 300 microns. Next, as shown in FIG. 3C, a part of the photoresist layer 3 is removed by developing with a Gray Scale Mask or a vertical moving exposure mechanism (Elevating Exposure Sy stem), and the remaining portion is gradually raised from the crystal plane 10 gradually. The photoresist layer 3 is formed at an oblique angle, so that the inclined surface 300 having a predetermined angle is maintained between the photoresist layer 3 and the crystal plane 10. The angle of the inclined plane is between 15 and 60 degrees. Then, as shown in FIG. 3D, a vertical unidirectional etching method is used to define the extreme 1y Anisotropic Etch, such as the Inductively-coupled-plasma (ICP) #etching technology. Micron needle array 4 tube wall position to form an upright tube hole array 4 with a plurality of upright tube holes 40 (which is completely consistent with the micron hollow needle array 4 type, so it is represented by the same component symbol), the upright tube hole array 4 is an opening with a predetermined bevel at the front end of the pipe hole 40

17163工研院.ptd 第17頁 568790 五、發明說明(12) 4 1,以及支撐該開口部4 1並曰上 部42所構成,其中,該直立相鄰管孔4〇連接之管底 阻層3構成,而該管底部42/由孔;車曰列4的開口部41由該光 灰階光罩、垂直移動、I f由5亥晶圓層1所形成。惟上述 刻等技術均為習知,在此遂又,j在此敘述之icp電漿蝕 ^ 牡此逐不另重複贅述。17163 Industrial Research Institute.ptd Page 17 568790 V. Description of the invention (12) 41, and the upper part 42 which supports the opening 41, wherein the bottom resistance layer connected to the upright adjacent pipe hole 40 3, and the tube bottom 42 is formed by a hole; the opening 41 of the car column 4 is formed by the light gray scale mask, vertically moved, and I f is formed by a wafer layer 1. However, the above-mentioned techniques are all known, so here again, the icp plasma erosion described by j here will not be repeated here.

之後,如第3E及3F圖所+ V 6 +古> μ # 坏不’以由晶圓層1及光阻層2製 成之直立官孔陣列4為模芯 θ 1及九阻層表 (Electroforming)於今 rCJ*〇Lld Core),利用電鑄技術 、°亥板Ά外,翻模製作一帝辟存磁 7 ;待母模7成型後,以氫 乍A母杈 圓層1,復用顯影劑溶i?丨曰=(Acetate)蝕除底部之晶 該直立管孔陣列4翻模形沾4〇開口部41之光阻層3 ’使得 完全吻合於該直立管孔陣成列'電鑄:模7, #内部成型圖案 出管孔40外部母模平面’且管心部40 2的母模高度高 接著,如第3G圖所示Γΐ (如圖中h所示)。 母模7 (如第3F所示)上族制1用奈米晶粒電鑄方法在電鑄 模,以形成由m複衣j亥直立管孔陣列4,然後脫 奈米晶粒電鑄鈷及夺米^ ♦屬5(如奈米晶粒電鑄鎳、 微米中空針頭陣列:々此?,錄鈷合金等 是完全依照該直立管孔在陳此^須一提的是,由於電鑄母模 奈米晶粒電鑄金屬5鱗^#型態翻模製成’ ®此’當 高度超出該管孔4叫二母後,由於管心部4°2的母模 yv ^ ^ ^ ^ ^ 卜的母模平面,故能避免針頭中空部 分因為電鑄金屬應力牵引而產生阻塞。 再而’如第3H圖所示,於該微米中空針頭陣列表面電After that, as shown in Figures 3E and 3F + V 6 + Ancient > μ # Badness' uses the upright official hole array 4 made of wafer layer 1 and photoresist layer 2 as the core θ 1 and nine resistance layer tables (Electroforming) in today's rCJ * 〇Lld Core), using electroforming technology, outside the plate to make a dipironic magnetic 7; after the mother mold 7 is formed, the hydrogen layer A mother branch round layer 1, complex Solve with a developer?丨 Said = (Acetate) The bottom crystal of the upright tube hole array 4 is turned over and the photoresist layer 3 of the opening portion 41 is formed so as to completely conform to the upright tube hole array. Electroforming: mold 7, # 内 shaped pattern out of the hole 40 outside the mother die plane 'and the height of the mother die of the tube core portion 40 2 is high, as shown in FIG. 3G (shown as h in the figure). A master mold 7 (shown in FIG. 3F) of the upper family 1 is electroformed with a nano-grain electroforming method to form an array of upright tube holes 4 formed by m coating, and then the nano-grain electroformed cobalt and Gao Mi ^ ♦ gen 5 (such as nano-grain electroformed nickel, micron hollow needle array: here ?, Cobalt alloy, etc. are completely in accordance with the upright tube hole in this place ^ It should be mentioned that due to the electroformed mother Die nano-granular electroformed metal 5 scales ^ # pattern is turned into a mold "®this" when the height exceeds the tube hole 4 is called the second mother, due to the female mold yv of the core part 4 ° 2 ^ ^ ^ ^ ^ The plane of the master mold can prevent the hollow part of the needle from being blocked due to the stress of the electroformed metal. Then, as shown in Figure 3H, the surface of the micron hollow needle array is electrically charged.

工研院.ptd 第18頁 568790 五、發明說明(13) 鍀一層奈米晶粒電鑄金6(包含純金、金合金、白金、白 金合金或K金)’或選用浸潰法(Dipping)於微米中空針 頭陣列4成品表面塗佈石夕膠、聚亞胺酯(Polyurethane) 或過氟酸聚合物(Perfluorinated polymer)等具良好生 物相容性之聚合物,來阻擋針頭陣列4表面的鎳離子釋 出,即完成微米中空針頭陣列4之製程步驟。 與前述實施例相較’以灰階光罩(G r a y S c a 1 e M a s k )或垂直移動式曝光機構(Elevated Exposure System) 漸層拉高產生之光阻層,亦能形成具預定傾斜角度之斜 面,使微米針頭陣列的針尖開口端傾斜約1 5至6 0度而產生 與前述實施例v形凹溝相同之功效。 第三實施例:_ 第4A圖至第4F圖係顯示本發明之微米中空針頭陣列製 造方法之第三實施例’本實施例與下述第四實施例皆與前 述第二實施例的製程步驟相似,即預先形成至少一直立管 孔陣列,再以該直立管孔陣列為模芯翻模製作電鑄母模, 然其不同處在於本實施例之直立管孔陣列係以快速原型技 術(Rapid Prototyping)固化樹脂來取代晶圓表面覆蓋 光阻層之半導體製程,此方法包含以下步驟: 首先,如第4 A圖所示,運用快速成型技術(r a p i d Prototyping),以雷射或紫外光等高能光束8照射例如環 氧樹脂(Epoxy)、矽樹脂、聚酯樹脂(p〇lyesters)或 聚酚樹脂(P〇lyphenolic acid Resin)等熱塑性樹脂, 使樹脂由半固悲固化(C u r i n g)成為硬化狀態而形成直立Institute of Industry and Technology.ptd Page 18 568790 V. Description of the invention (13) 鍀 One layer of nano-grain electroformed gold 6 (including pure gold, gold alloy, platinum, platinum alloy or K gold) 'or choose dipping method Coat the surface of the micron hollow needle array 4 with a good biocompatible polymer such as stone gum, polyurethane or perfluorinated polymer to block the nickel on the surface of the needle array 4 The ions are released, and the process steps of the micron hollow needle array 4 are completed. Compared with the foregoing embodiment, a photoresist layer produced by gradually elevating a gray scale mask (Gray S ca 1 e M ask) or a vertical moving exposure mechanism (Elevated Exposure System) can also form a predetermined tilt angle The inclined surface inclines the open end of the tip of the microneedle array by about 15 to 60 degrees to produce the same effect as the v-shaped groove of the foregoing embodiment. Third Embodiment: _ Figures 4A to 4F show the third embodiment of the method for manufacturing a micron hollow needle array of the present invention. This embodiment and the following fourth embodiment are the same as those of the second embodiment. Similarly, an array of at least straight riser holes is formed in advance, and then an electroformed master mold is made by using the riser bore array as a mold core, but the difference is that the riser bore array of this embodiment is based on rapid prototype technology (Rapid (Prototyping) curing resin to replace the semiconductor process of covering the photoresist layer on the wafer surface. This method includes the following steps: First, as shown in Figure 4A, rapid prototyping is used to apply high energy such as laser or ultraviolet light. The light beam 8 irradiates a thermoplastic resin such as epoxy, silicone, polyester resin, or polyphenolic acid resin, and the resin is cured from curing to hardening. Erect

568790 五、發明說明(14) 管孔陣列4之t 接著,如 熱固性樹脂, 成型多數連接 係形成具預定 1 5至6 0度之間 而後,如 列4為模芯,$ 外翻模製作一 示,用酸鹼溶 部的成型圖案 母模厚度超出 示)。 接者,如 母模上複製該 米中空針頭陣 容性良好之聚 晶粒電鑄金屬 [見實— 而第5 A圖 製造方法之第 似,均先行形 列當作模芯翻 施例之處,在 卜底部4 2。 第4 B及4 C圖所示,以雷射8持續快速成型該 並在直立管孔陣列4之管底部4 2上方,一體 各管底部4 2之開口部4 1。惟該開口部4 1前端 傾斜角度之切角,且該傾斜切角之角度介於 第4D圖所示,以硬化樹脂材質之直立管孔陣 j用士電_技術(Electro forming)於該模芯 ί ί 2 ί 7 ’待母模7成型後,再如第3 E圖所 访:、、、』性樹脂溶除,使得該電鑄母桓7肉 與該直立管?丨_ 從竹/电鉍母杈γ内 該管孔外部母二:4全然,合,|管心部的 、平面一段距離(如圖中h戶斤 第4F圖所示,〜 直立管孔陣,利用奈米晶粒電禱方法在電鑄 列4表面數列4 ’復於脫模後於已形成的微 合物材料作、層奈米晶粒電•金6或生物相 製作之槐伞為隔離層’即完成本發明以奈米 中空針頭陣列。 至第51?圖則夺一 ^ 四實施例。不本發明之微米中空針頭陣列 成至少—本實施例與前述第三實施例相 模製作電鲈立管孔陣列’再以該直立管孔陣 於該直立二母模。惟本實施例不同於其他實 s孔陣列的製作係以雷射削切方法568790 V. Description of the invention (14) T of the hole array 4 Next, if thermosetting resin is used, most of the connection systems are formed with a predetermined range of 15 to 60 degrees, and if column 4 is the mold core, the outer mold is made. (The thickness of the master pattern of the forming pattern with the acid-base dissolving part is shown in excess). Then, if the hollow core needle of the meter is copied on the female mold, the polycrystalline grain electroformed metal with good line properties [see the truth — and the manufacturing method of Figure 5A is similar, the rows are first used as the core core for the example. , At the bottom of the BU 4 2. As shown in Figs. 4B and 4C, the laser 8 is continuously and rapidly formed above the tube bottom 42 of the upright tube hole array 4 to integrate the opening 41 of the bottom 42 of each tube. However, the cut angle of the inclination angle of the front end of the opening 41, and the angle of the inclined cut angle is between that shown in FIG. 4D. The upright tube hole array made of hardened resin is electroformed on the mold. Core ί 2 ί 7 'After the mother mold 7 is formed, visit again as shown in Figure 3E: ",,," The resin is dissolved, so that the electroformed mother mold 7 meat and the upright tube?丨 _ From the bamboo / electric bismuth mother branch γ inside the tube hole outside the mother 2: 4 completely, together, | the core of the tube, a certain distance from the plane (as shown in Figure 4F of the household, ~ upright tube array The nano-grain electric prayer method is used on the surface of the electroformed row 4 of the electroformed column 4 'to restore the formed micro-composite material after demolding, and the nano-grain electro-gold or bio-phase locust umbrella is The isolation layer is used to complete the nano hollow needle array of the present invention. The first to fourth embodiments are shown in the fourth embodiment. The micro hollow needle array of the present invention is at least-this embodiment and the third embodiment described above are fabricated in phase The perch riser hole array 'then uses the riser hole array in the two upright female molds. However, this embodiment is different from other solid s-hole arrays by laser cutting method.

17163工研院,ptd17163 ITRI, ptd

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568790 五、發明說明(15) (L a s e r C u 11 i n g)將整片基板材料溶姓成預定型鮮、,復 實施翻模。該製造方法包含下列步驟: 如第5A圖所示,製備一有機材質基板9,該基板9材質 可為聚,酸酯(P〇lycar>bonate)或其他熱熔性材料所製 成。本貫施例係以聚碳酸酯基板9為直立管孔陣列之开彡成 材料,並以雷射削切技術(Laser Cutting)實施單向垂 直切割(雷射8熔蝕方向自基板9上方至下方)。 ,而後,如第5B及5C圖所示,持續於基板9表°面進行雷 射削切,以定義出至少一具複數個直立管孔& 〇之直立其孔 陣列4,該直立管孔陣列4係由管孔4〇前端之開口部以 及支撐該開口部41並且提供相鄰直立管孔4〇連接:邛 42所構成,該開口部41未與管底部4 右 ;:::斜角度之切胃,使得該傾斜切角之 列二如利 外翻模製作-電禱母模7;待母模7成;。;_^ 不,用蝕刻方法將由I碳酸酯基板9形成的模弋^所 得該電鑄母模7内部的成型圖案與該直立管孔^ ^八,使 合,且管心部的母模厚度超出管孔彳王然吻 (如圖中h所示)。 丨母杈千面一段矩離 接著,如第5F圖所示,利用奈米晶粒電鑄方法在 ::上複製該直立管孔陣列4’復於脫模後於已形成% 未中空針頭陣列4表面敷鐘一層奈米晶粒電鑄纟6或生物次568790 V. Description of the invention (15) (L a s e r Cu 11 i n g) The whole substrate material is melted into a predetermined shape, and then the mold is turned over. The manufacturing method includes the following steps: As shown in FIG. 5A, an organic material substrate 9 is prepared, and the material of the substrate 9 may be made of poly (polycarbonate) or other hot-melt materials. In this embodiment, the polycarbonate substrate 9 is used as the opening and closing material of the vertical tube hole array, and laser cutting is used to perform a unidirectional vertical cutting (the laser 8 is etched from the top of the substrate 9 to the Below). Then, as shown in Figs. 5B and 5C, laser cutting is continued on the surface of the substrate 9 to define at least one upright hole array 4 of upright tube holes & 0, the upright tube holes The array 4 is formed by an opening at the front end of the tube hole 40 and supporting the opening portion 41 and providing an adjacent upright tube hole 40 connection: 邛 42. The opening portion 41 is not right with the tube bottom 4; :::: oblique angle The stomach is cut, so that the second inclination of the oblique cut angle is made out of the mold-electric prayer master 7; wait for the master 70% ;. _ ^ No, the molding pattern formed by the I carbonate substrate 9 obtained by the etching method is used to obtain the internal molding pattern of the electroformed master mold 7 and the upright tube hole ^ ^ eight, and the thickness of the core mold core mold Wang Ran kissed beyond the tube hole (shown as h in the figure).丨 The mother branch is separated by a moment, as shown in FIG. 5F, using the nano-grain electroforming method to copy the upright tube hole array 4 'on :: after demolding and forming a% unhollowed needle array 4 The surface is covered with a layer of nano-grain electroforming 纟 6 or biological times

17163工研院.ptd 第21頁 568790 五、發明說明(16) 、___ 容性良好之聚合物材料作為隔離層,即完成本 、, 晶粒電鑄金屬製作之微米中空針頭陣列。 只明以奈米 以快速原槊(Rapid Prototyping)將樹脂材; 或用雷射削切(Laser Cutting)方法將基板^麵=固化 管孔陣列,均可直接將管孔開口端塑形成具預定傾斜n 之切口 ,是以電鑄完成之中空針頭前端亦能產生1 5至6 0度 之傾斜切角,而達到與前述半導體製程方法相同之功效。17163 Institute of Industry and Technology.ptd Page 21 568790 V. Description of the invention (16), ___ Polymer materials with good capacitance as the isolation layer, the micron hollow needle array made of this and grain electroformed metal is completed. It is only clear that the resin material is made with nanometers and Rapid Prototyping; or the laser cutting method is used to change the substrate surface to the array of cured tube holes, and the open ends of the tube holes can be directly formed into a predetermined shape. The inclination of the n-cut is made by electroforming the front end of the hollow needle, which can also produce an inclination angle of 15 to 60 degrees, so as to achieve the same effect as the aforementioned semiconductor manufacturing method.

以上所述者僅係用以說明本發明之具體貫例而已,並 非用以限定本發明之可實施範圍’舉凡熟習該項技術者在 未脫離本發明所揭示之精神與技術思想下所完成之一切等 效修飾或改變,仍應由後述之申請專利範圍所涵蓋。The above are only used to illustrate the specific implementation examples of the present invention, and are not intended to limit the implementable scope of the present invention. 'Those who are familiar with the technology can complete it without departing from the spirit and technical ideas disclosed by the present invention. All equivalent modifications or changes shall still be covered by the scope of patent application mentioned later.

17163工研院邛付17163 Industrial Research Institute

第22頁 568790 圖式簡單說明 【圖式簡單說明】: 第1 A至1 Η圖係表示本發明之微米中空針頭陣列製造方 法之第一實施例; 第2Α圖係表示按本發明之微米中空針頭陣列製造方法 製作,並以奈米晶粒電鑄金屬鍍金完成之微米針頭立體 圖, 第2Β圖係表示第2Α圖沿剖面線2Β-2Β之剖面示意圖; 第3Α至3Η圖係表示本發明之微米中空針頭陣列製造方 法之第二實施例; 第4Α至4F圖係表示本發明之微米中空針頭陣列製造方 法之第三實施例; 第5 Α至5 F圖係表示本發明之微米中空針頭陣列製造方 法之第四實施例; 第6圖係習知微米針頭陣列之電子顯微鏡的高倍放大 圖;以及 第7圖係三種習知微米針頭之針頭刺入端之簡單示意 比較圖。 1 晶圓層 10 晶面 11 V形凹溝 110 V形凹溝傾斜面 2 導電層(阻蝕層) 3 (第一)光阻層Page 568790 Brief description of the drawings [Simplified illustration of the drawings]: Figures 1 A to 1 show the first embodiment of the manufacturing method of the micron hollow needle array of the present invention; Figure 2A shows the micron hollow according to the present invention A perspective view of a micron needle made by a needle array manufacturing method and electroplated with nano-grain electroformed metal. Figure 2B is a schematic cross-sectional view of Figure 2A along the section line 2B-2B; Figures 3A to 3D show the present invention. The second embodiment of the method for manufacturing a micron hollow needle array; Figures 4A to 4F show the third embodiment of the method for manufacturing a micron hollow needle array of the present invention; The Figures 5A to 5F show the micron hollow needle array of the present invention The fourth embodiment of the manufacturing method; FIG. 6 is a high-magnification view of an electron microscope of a conventional micrometer needle array; and FIG. 7 is a simple schematic comparison diagram of the needle penetration ends of three conventional micrometer needles. 1 Wafer layer 10 Crystal plane 11 V-shaped groove 110 V-shaped groove inclined surface 2 Conductive layer (resistance layer) 3 (first) photoresist layer

17163工研院.ptd 第23頁 568790 圖式簡單說明 3 0 光阻層傾斜面 4 微米中空針頭陣列 4 0 直立管孔 400 開口面 401 管壁 40 2 管心部 41 開口部 42 管底部 5 奈米晶粒電结金屬 6 奈米晶粒電鑄金 7 電鑄母模 8 局能光束 9 有機材質基板17163 Industrial Research Institute.ptd Page 23 568790 Brief description of the drawing 3 0 Photoresist inclined surface 4 micron hollow needle array 4 0 Upright tube hole 400 Opening surface 401 Tube wall 40 2 Core part 41 Opening part 42 Tube bottom 5 Nai Rice grain electrojunction metal 6 Nano grain electroformed gold 7 Electroformed master 8 Local energy beam 9 Organic material substrate

17163工研院.ptd 第24頁17163 ITRI.ptd Page 24

Claims (1)

568790 六、申請專利範圍 1. 一種用於經皮傳輸之微米針頭陣列(M i c r ο n e e d 1 e Array)製造方法,該方法包含以下步驟: 預備一晶圓層,其上形成有複數個具預定傾斜度 之峰部; 於該峰部上覆蓋一第一光阻層; 顯影該第一光阻層,以定義出複數個直立管孔, 該管孔前端係順應該峰部傾斜面形成,以使靠近該晶 圓層之管孔開口面完全貼合於該峰部; 於該第一光阻層表面佈覆一第二光阻層並予以顯 影,使得該第二光阻層剝離後,該直立管孔之管心部 的第一光阻層厚度大於該直立管孔外部之第一光阻層 厚度; 於該第一光阻層上填鑄一奈米晶粒電鑄金屬,以 形成金屬針頭陣列;以及 移除該晶圓層及該第一光阻層。 2. 如申請專利範圍第1項之微米針頭陣列製造方法,復包 括於該金屬針頭陣列形成後,於該針頭陣列表面形成 一隔離層。 3. 如申請專利範圍第2項之微米針頭陣列製造方法,其 中,該隔離層係以電鑄方法形成一奈米晶粒電鑄金, 且該奈米晶粒電鑄金之材質係選自純金、白金、金合 金、白金合金及K金等所組組群之一者。 4. 如申請專利範圍第2項之微米針頭陣列製造方法,其 中,該隔離層係以浸潰法(D i pp i ng)形成選自如矽膠568790 6. Scope of patent application 1. A micron needle array (Micr ο need 1 e Array) manufacturing method for transdermal transmission, the method includes the following steps: preparing a wafer layer on which a plurality of predetermined A peak portion of the inclination; covering the peak portion with a first photoresist layer; developing the first photoresist layer to define a plurality of upright tube holes, the front end of the tube hole is formed in accordance with the inclined surface of the peak portion, and The opening surface of the tube hole close to the wafer layer is completely adhered to the peak portion; a second photoresist layer is coated on the surface of the first photoresist layer and developed, so that after the second photoresist layer is peeled off, the The thickness of the first photoresist layer in the core portion of the upright tube hole is greater than the thickness of the first photoresist layer outside the upright tube hole; a nano-grain electroformed metal is filled on the first photoresist layer to form a metal A needle array; and removing the wafer layer and the first photoresist layer. 2. The method for manufacturing a micron needle array according to item 1 of the patent application scope, further comprising forming an isolation layer on the surface of the needle array after the metal needle array is formed. 3. The microneedle array manufacturing method according to item 2 of the patent application scope, wherein the isolation layer is formed by electroforming with a nano grain electroformed gold, and the material of the nano grain electroformed gold is selected from One of the groups of pure gold, platinum, gold alloy, platinum alloy and K gold. 4. The microneedle array manufacturing method according to item 2 of the patent application scope, wherein the isolation layer is formed by dipping method (D i pp i ng) and is selected from silicon rubber 17163工研院.ptd 第25頁 568790 申請專利範圍 (filicone Rubber)、聚亞胺酯(Polyurethane)及 過氣酸聚合物(Perfluorinated p〇lymer)等材料所 組組群之一者。 5.如申請專利範圍第1項之微米針頭陣列製造方法,其 中’該微米針頭陣列係採中空型態(Ho 1 1 ow)設計。 6 ·如申請專利範圍第1項之微米針頭陣列製造方法,其 中,該晶圓層形成峰部後,於該峰部表面佈覆-層(Seed Layer)。 7·如申請'^利範圍第1項之微米針頭陣列製造方法 :’該晶圓層形成峰部I,於該峰部表面佈覆— 層(Etch Stop)。 8. ΐ中利範圍第1項之微米針頭陣列製造方法 。卩之傾斜度介於1 5至6 0度之間。 9 ·如申請專利節圍μ 中,# ΐ 弟1項之微米針頭陣列製造方法 ρ, —光阻層係一負光阻(Negative Photoresist) 。 ive 1 0 ·如申請專利筋图楚 中,該太半曰弟1項之微米針頭陣列製造方法,其 (nm)。”曰粒電轉金屬之晶粒粒徑係小於1 0 0奈米 1 1 ·如申請專利範图 中,該奈米晶粒U項之微米針頭陣列製造方法 12. 如申請專利範圍2金屬係一奈米晶粒電鑄鎳 13. 如申請鱗金屬係一奈米晶粒電鑄姑 弟1項之微米針頭陣列製造方法 六 種子 其 阻蝕 其 其 其 其 其17163 Industrial Research Institute. Ptd page 25 568790 One of the materials group of patent application scope (filicone rubber), polyurethane (Polyurethane) and perfluorinated polymer (Perfluorinated polymer). 5. The method for manufacturing a micron needle array according to item 1 of the application, wherein the micron needle array is designed in a hollow shape (Ho 1 1 ow). 6 · The microneedle array manufacturing method according to item 1 of the patent application scope, wherein after the wafer layer forms a peak portion, a seed layer is coated on the surface of the peak portion. 7. If the application of the microneedle array manufacturing method of the first item of the scope of application: "The wafer layer forms a peak portion I, and a layer (Etch Stop) is formed on the surface of the peak portion. 8. The micron needle array manufacturing method of item 1 in Zhongli range. The inclination of radon is between 15 and 60 degrees. 9 · As in the patent application section μ, the method of manufacturing a micron needle array of # ΐ 1 item ρ, — the photoresist layer is a negative photoresist. ive 1 0 · As described in the patent application, the method for manufacturing a micron needle array of the first half of this term is (nm). ”Said that the grain size of the grain-to-metal conversion is less than 100 nanometers 1 1 · As shown in the patent application chart, the method of manufacturing micron needle arrays of the nanometer grain U is 12. If the scope of the patent application is 2 Nano-grain electroformed nickel 13. For example, a method for manufacturing a micron needle array of scale metal-nano-grain electroformed 1st item is applied. 17163工研院.ptd 第26頁 568790 六、申請專利範圍 中,該直立管孔管心部之光阻層上方有奈米晶粒電鑄 金屬覆蓋時,係以研磨方法去除之。 1 4 . 一種用於經皮傳輸之微米針頭陣列(M i c r ο n e e d 1 e Array)製造方法,該方法包含以下步驟: 預備一晶圓層; 於該晶圓層上佈覆一光阻層,並將該光阻層形成 為複數個具預定傾斜度之峰部; 蝕刻該峰部,以定義出複數個開口面順應該峰部 傾斜度之直立管孔陣列; 翻模該直立管孔陣列俾形成一母模; 蝕除該直立管孔陣列;以及 電鑄一奈米晶粒電鑄金屬至該母模,以於脫模後 形成金屬針頭陣列。 1 5 .如申請專利範圍第1 4項之微米針頭陣列製造方法,復 包括於該金屬針頭陣列形成後,於該針頭陣列表面形 成一隔離層。 1 6 .如申請專利範圍第1 5項之微米針頭陣列製造方法,其 中,該隔離層係以電鑄方法形成一奈米晶粒電鑄金, 且該奈米晶粒電鑄金之材質係選自純金、白金、金合 金、白金合金及K金等所組組群之一者。 1 7 .如申請專利範圍第1 5項之微米針頭陣列製造方法,其 中,該隔離層係以浸潰法(D i pp i ng)形成選自如矽膠 (Silicone Rubber)、聚亞胺酯(Polyurethane)及 過氟酸聚合物(Perfluorinated polymer)等材料所17163 Industrial Research Institute.ptd Page 26 568790 6. In the scope of patent application, when the nano-grain electroformed metal is overlaid on the photoresist layer of the core of the upright tube, it is removed by grinding. 14. A method for manufacturing a micron needle array (Micr ο need 1 e Array) for percutaneous transmission, the method includes the following steps: preparing a wafer layer; and coating a photoresist layer on the wafer layer, The photoresist layer is formed into a plurality of peaks with a predetermined inclination; the peaks are etched to define a plurality of upright tube hole arrays whose opening surfaces conform to the inclination of the peaks; Forming a master mold; etching out the upright tube hole array; and electroforming a nano-grain electroformed metal to the master mold to form a metal needle array after demolding. 15. The method for manufacturing a micron needle array according to item 14 of the patent application scope, further comprising forming an isolation layer on the surface of the needle array after the metal needle array is formed. 16. The method for manufacturing a micron needle array according to item 15 of the scope of patent application, wherein the isolation layer is formed by electroforming to form a nano-grain electroformed gold, and the material structure of the nano-grain electroformed gold is One selected from the group consisting of pure gold, platinum, gold alloy, platinum alloy, and K gold. 17. The method for manufacturing a micron needle array according to item 15 of the scope of patent application, wherein the isolation layer is formed by dipping method (D i pp i ng) and is selected from the group consisting of, for example, Silicone Rubber and Polyurethane. ) And Perfluorinated polymer 17163工研院.ptd 第27頁 568790 六、申請專利範圍 組組群之一者。 1 8 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該微米針頭陣列係採中空型態(Ho 1 1 ow)設計。 1 9 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該光阻層峰部係以灰階光罩(Gray Scale Mask) 技術漸層拉高而形成者。 2 0 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該光阻層峰部係以垂直移動式曝光機構 (Elevating Exposure System)漸層拉高而形成者。 2 1.如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該光阻層峰部之傾斜度介於1 5至6 0度之間。 2 2 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該光阻層峰部係以極單向性#刻法(E X t r e m e 1 y Anisotropic Etch)定義出直立管孔的管壁位置。 2 3 .如申請專利範圍第2 2項之微米針頭陣列製造方法,其 中,該極單向性蝕刻法係採用電感耦合電漿 (Inductively-coupled-plasma, ICP) I虫刻技術。 2 4 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該母模係以電鑄方法(Electroforming)形成一 電鑄母模。 2 5 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該奈米晶粒電鑄金屬之晶粒粒徑係小於1 0 0奈米 (nm) 〇 2 6 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其17163 Industrial Research Institute.ptd Page 27 568790 6. Scope of patent application One of the groups. 18. The method for manufacturing a micron needle array according to item 14 of the scope of patent application, wherein the micron needle array is designed in a hollow type (Ho 1 1 ow). 19. The method for manufacturing a micron needle array according to item 14 of the scope of patent application, wherein the peak portion of the photoresist layer is formed by gradually increasing the height by using Gray Scale Mask technology. 20. The microneedle array manufacturing method according to item 14 of the scope of patent application, wherein the peak portion of the photoresist layer is formed by gradually elevating the vertical moving exposure mechanism (Elevating Exposure System). 2 1. The microneedle array manufacturing method according to item 14 of the scope of patent application, wherein the inclination of the peak portion of the photoresist layer is between 15 and 60 degrees. 2 2. The method for manufacturing a micron needle array according to item 14 of the scope of the patent application, wherein the peak portion of the photoresist layer defines a tube with a vertical tube hole using an extremely unidirectional #etch method (EX treme 1 y Anisotropic Etch). Wall position. 2 3. The microneedle array manufacturing method according to item 22 of the patent application scope, wherein the polar unidirectional etching method uses an inductively-coupled-plasma (ICP) I etch technique. 24. The microneedle array manufacturing method according to item 14 of the scope of patent application, wherein the master mold is formed by an electroforming method (Electroforming). 25. The microneedle array manufacturing method according to item 14 of the scope of patent application, wherein the grain size of the nano-grain electroformed metal is less than 100 nanometers (nm). A method for manufacturing a micron needle array in the range of item 14 which 17163工研院.ptd 第28頁 568790 六、申請專利範圍 中,該奈米晶粒電鑄金屬係一奈米晶粒電鑄鎳。 2 7 .如申請專利範圍第1 4項之微米針頭陣列製造方法,其 中,該奈米晶粒電鑄金屬係一奈米晶粒電鑄始。 2 8 . —種用於經皮傳輸之微米針頭陣列(M i c r ο n e e d 1 e Array)製造方法,該方法包含以下步驟: 用高能光束照射樹脂形成至少一直立管孔陣列, 該直立管孔陣列上定義有複數個開口具預定傾斜度之 直立管孔; 翻模該直立管孔陣列俾形成一母模; 蝕除該直立管孔陣列;以及 電鑄一奈米晶粒電鑄金屬至該母模,以於脫模後 形成金屬針頭陣列。 2 9 .如申請專利範圍第2 8項之微米針頭陣列製造方法,復 包括於該金屬針頭陣列形成後,於該針頭陣列表面形 成一隔離層。 3 0 .如申請專利範圍第2 9項之微米針頭陣列製造方法,其 中,該隔離層係以電鑄方法形成一奈米晶粒電鑄金, 且該奈米晶粒電鑄金之材質係選自純金、白金、金合 金、白金合金及K金等所組組群之一者。 3 1.如申請專利範圍第2 9項之微米針頭陣列製造方法,其 中,該隔離層係以浸潰法(D i p p i n g)形成選自如石夕膠 (Silicone Rubber)、聚亞胺酯(Polyurethane)及 過氟酸聚合物(Perfluorinated polymer)等材料所 組組群之一者。17163 Industrial Research Institute.ptd Page 28 568790 6. In the scope of patent application, the nano-grain electroformed metal is a nano-grain electroformed nickel. 27. The microneedle array manufacturing method according to item 14 of the scope of patent application, wherein the nano-grain electroforming metal is a nano-grain electroforming. 2 8. — A method for manufacturing a micron needle array (Micro Array need 1 e Array) for percutaneous transmission, the method includes the following steps: irradiating a resin with a high-energy beam to form at least a straight tube hole array, the vertical tube hole array A plurality of vertical tube holes with predetermined inclination openings are defined above; flipping the vertical tube hole array to form a master mold; etching the vertical tube hole array; and electroforming a nano-grain electroformed metal to the mother Mold to form a metal needle array after demolding. 29. The microneedle array manufacturing method according to item 28 of the patent application scope, further comprising forming an isolation layer on the surface of the needle array after the metal needle array is formed. 30. The microneedle array manufacturing method according to item 29 of the patent application scope, wherein the isolation layer is formed by electroforming with a nano-grain electroformed gold, and the material structure of the nano-grain electroformed gold is One selected from the group consisting of pure gold, platinum, gold alloy, platinum alloy, and K gold. 3 1. The microneedle array manufacturing method according to item 29 of the patent application scope, wherein the isolation layer is formed by a dipping method and is selected from the group consisting of, for example, Silicone Rubber and Polyurethane. And perfluorinated polymer (Perfluorinated polymer) and other materials group. 17163工研院.ptd 第29頁 568790 六、申請專利範圍 3 2 .如申請專利範圍第2 8項之微米針頭陣列製造方法’其 中,該微米針頭陣列係採中空型態(Ho 1 1 ow)設計。 3 3 .如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中,該高能光束係為雷射。 3 4.如申請專利範圍第2 8項之微米針頭陣列製造方法’其 中,該直立管孔之傾斜角度介於1 5至6 0度之間。 3 5 .如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中,該樹脂係選自環氧樹脂(Epoxy)、矽樹脂、聚醋 樹脂(Polyesters)及聚 S分樹脂(Polyphenolic acid Res i η)等熱塑性樹脂所組組群之一者所製成。 3 6 ·如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中,該直立管孔陣列係以快速原型(R a p i d Prototyping)技術製造。 3 7 ·如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中,該樹脂係一聚碳酸酯(Polycarbonate)樹脂基 板。 3 8 ·如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中’該直立管孔陣列係以雷射削切(Laser Cutting) 技術製作。 3 9 .如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中’該母模係以電鑄方法(Electroforming)形成一 電鑄母模。 4 0 ·如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中’ 4奈米晶粒電每金屬之晶粒粒徑係小於1 〇 〇奈米17163 Industrial Research Institute. Ptd Page 29 568790 6. Application scope of patent 3 2. For example, the method of manufacturing micron needle array of the 28th item of patent application 'in which the micron needle array adopts a hollow type (Ho 1 1 ow) design. 33. The microneedle array manufacturing method according to item 28 of the patent application scope, wherein the high-energy beam is a laser. 34. The method for manufacturing a micron needle array according to item 28 of the scope of patent application, wherein the inclination angle of the upright pipe hole is between 15 and 60 degrees. 35. The microneedle array manufacturing method according to item 28 of the patent application scope, wherein the resin is selected from the group consisting of epoxy, silicone, polyesters, and polyphenolic acid resins. i η) and other thermoplastic resins. 36. The microneedle array manufacturing method according to item 28 of the patent application scope, wherein the upright tube hole array is manufactured by Rapid Prototyping technology. 37. The microneedle array manufacturing method according to item 28 of the patent application scope, wherein the resin is a polycarbonate resin substrate. 38. The method for manufacturing a micron needle array according to item 28 of the patent application scope, wherein the 'upright tube hole array is made by laser cutting technology. 39. The microneedle array manufacturing method according to item 28 of the patent application scope, wherein 'the master mold is formed by an electroforming method (Electroforming). 40. The method for manufacturing a micron needle array according to item 28 of the scope of the patent application, wherein the grain size of each metal of the 4 nm grain size is less than 100 nm. 17163工研院.Ptd 第30頁 568790 六、申請專利範圍 (nm) 〇 4 1 .如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中,該奈米晶粒電鑄金屬係一奈米晶粒電鑄鎳。 4 2 .如申請專利範圍第2 8項之微米針頭陣列製造方法,其 中,該奈米晶粒電鑄金屬係一奈米晶粒電鑄鈷。 43.—種在不傷及真皮層(血管及神經密佈於真皮層)的 情況下,可提供有關藥物、體液或其他生物分子 (B i ο 1 〇 g i c a 1 Μ ο 1 e c u 1 e)經皮傳輸及取樣之針頭陣 列,係包括: 由多數直立管孔連接形成之中空針頭陣列,該直 立管孔具有一與皮膚接觸之開口部,及支撐該開口部 並且提供相鄰開口部連接之管底部所構成,其中,該 開口部前端形成有一尖銳斜角,且該斜角與水平面相 交一預設角度。 4 4 .如申請專利範圍第4 3項之針頭陣列,其中,該直立管 孔具有一同時貫穿該開口部與管底部之管心部。 4 5 .如申請專利範圍第4 3項之針頭陣列,其中,該斜角係 介於1 5至6 0度。 4 6 .如申請專利範圍第4 3項之針頭陣列,其中,該直立管 孔外表面形成有一奈米晶粒電鍍白金。 4 7 .如申請專利範圍第4 3項之針頭陣列,其中,該直立管 孔外表面形成有一奈米晶粒電鑛金。17163 Industrial Research Institute. Ptd Page 30 568790 6. Application for Patent Range (nm) 〇 4 1. The method for manufacturing a micron needle array as described in item 28 of the patent application, wherein the nano-grain electroformed metal is a nanometer Rice grain electroformed nickel. 42. The microneedle array manufacturing method according to item 28 of the patent application scope, wherein the nano-grain electroformed metal is a nano-grain electroformed cobalt. 43.—It can provide drugs, body fluids or other biomolecules (B i ο 1 〇gica 1 Μ ο 1 ecu 1 e) percutaneously without harming the dermis (blood vessels and nerves are densely packed in the dermis). The needle array for transmission and sampling includes: a hollow needle array formed by connecting a plurality of upright tube holes, the upright tube hole having an opening in contact with the skin, and a bottom of the tube supporting the opening and providing connection to adjacent openings In the structure, a sharp oblique angle is formed at a front end of the opening portion, and the oblique angle intersects a horizontal plane at a predetermined angle. 44. The needle array according to item 43 of the scope of patent application, wherein the upright pipe hole has a core portion that penetrates both the opening portion and the bottom of the pipe at the same time. 4 5. The needle array according to item 43 of the patent application scope, wherein the oblique angle is between 15 and 60 degrees. 46. The needle array according to item 43 of the scope of patent application, wherein a nano-grain electroplated platinum is formed on the outer surface of the upright pipe hole. 47. The needle array according to item 43 of the scope of patent application, wherein a nano-grain electromechanical gold is formed on the outer surface of the upright pipe hole. 17163工研院.ptd 第31頁17163 ITRI.ptd Page 31
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US7906273B2 (en) 2006-05-26 2011-03-15 National Tsing Hua University Method of manufacturing hollow micro-needle structures

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Publication number Priority date Publication date Assignee Title
US7906273B2 (en) 2006-05-26 2011-03-15 National Tsing Hua University Method of manufacturing hollow micro-needle structures

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