TW567531B - Method of utilizing the same pattern to repair mask in semiconductor manufacture - Google Patents

Abstract

A method of utilizing the same patterns to repair a mask in semiconductor manufacture is disclosed. The method optics projects a pattern on the same mask or another mask having no defect and duplicates the no-defect pattern onto a photoresist layer on a pattern having defects, and then removes opaque defects by developing and etching, or recovers transparent defects by developing and etching, so as to achieve the object of repairing the mask.

Description

567531 V. Description of the Invention (1) Technical Field 1: The present invention relates to a method for repairing a photomask by using the same pattern in a semiconductor process, and particularly to a method in the semiconductor process that optically uses the same light. A method of repairing a defect pattern of a mask by using a defect-free pattern on a mask or a different mask. "Xianxia-Rejuvenation" Generally speaking, the main body of the mask is mostly composed of a flat and transparent glass insulating material such as quartz. The photomask is fabricated on the above substrates. An opaque film with a thickness of several hundred A, such as chromium (Cr), is deposited, and then a photoresist is formed to cover the opaque film. Beam high-resolution exposure technology is exposed and developed to form the desired pattern of each layer of the integrated circuit element on the photoresist. Then, this pattern is transferred to an opaque film by etching, and a light-transmitting area and an opaque area are formed on the mask, and even a layer of chromium dioxide with a thickness of about 200 A is added on the surface of the chromium film Film to prevent reflection of the metallic chromium film during exposure. However, during the manufacturing process of the photomask, a perfect photomask cannot be formed, or the pattern on the photomask is damaged due to careless use. Therefore, during the photolithography process for pattern reproduction, mask defects must be repaired first. There are two kinds of defects caused by the damage of the photomask, for example, due to the error in the pattern of the chrome film or the phase shift layer, the light-transmissive area is formed in the portion that should be the opaque area, which causes the transparent defect (Transparent Defect); Or, an opaque area is formed in a portion that should be a light-transmitting area due to excessive coating of a chromium film, thereby causing an opaque defect. Generally used mask repair technology such as laser beam (Laser

567531 V. Description of Invention (2)

Beam), Focused Ion Beam (FIB), and Atomic Force Microscopy. Among them, because the resolution of laser light is limited, and laser ablation may remove the opaque film adjacent to the defect area, and damage the mask pattern. In addition, the laser light will transfer a large amount of thermal energy, which will not only dissolve and evaporate the opaque defects, but also cause the adjacent or lower quartz of the opaque defects to be damaged and roughened, thereby reducing the transmittance of the quartz and Change the phase of transmitted light. Therefore, repairing a photomask with a laser beam may cause considerable side effects and is not applicable. In addition, because the focused ion beam has a much smaller focus size than the laser beam, the focused ion beam has a great advantage in terms of repair accuracy and yield. Therefore, the focused ion beam has become a widely used mask repair technique. When repairing a photomask with a focused ion beam, a beam-indued method can be used to deposit a light-impermeable carbon film. For example, a polystyrene polymer can repair light-transmitting defects. In addition, you can use the Sputtering Away method to remove excess chromium film, which can repair opaque defects. However, because the focused ion beam technology uses charged particles to scan the defect area multiple times to repair the pattern of the photomask, some of the charged particles will be left on the photomask, resulting in a charge effect, making it difficult to locate and control the focused ion beam. . Affected by the charge effect, it leads to poor positioning control accuracy, which causes the image quality to decrease. In addition, focused ion beam technology is difficult to effectively repair large-area defect patterns, which not only takes a lot of time, but also has a relatively low success rate.

567531 V. Description of the invention (3) What it says: The focus ion beam used in the mask repair technology is affected by f, but it faces the problems of image quality degradation and fixed; In addition, the conventional mask repair technology is difficult to repair a large defect area. Not only is it popular, but the repair success rate is very high. The repair time is quite long.

Therefore, one of the main objects of the present invention is to use the same pattern on the same mask or different masks to align the optical image with the same pattern on the semiconductor mask in the semiconductor manufacturing process. Therefore, the practice can be avoided: Method, the system is a profit effect. Avoiding Charges Induced by the Known Technology Another object of the present invention is to provide a method of mask pattern, which has high accuracy, and positioning control for repairing the light and the early accuracy of the light by using the predecessor method. The purpose of the test is to use the ion beam or electron beam of the present invention, so it is not necessary to repair the process and equipment, which can reduce the cost and burden of the invention. This can simplify the invention. Another object is that the present invention can repair the photomask, so it can be easily repaired in multiple ways. Area ㈣ 'and according to the needs of the process, according to the purpose described above, this method :: The method of repairing the photomask with the same pattern, where: light; Identical but not: ^ .f: This defect-free pattern is deficient in the above ^, record the defect map on this mask

Page 7 M7531-^ V. Description of the invention (4) The coordinates of the defect and the recording projector table perform the above steps. The projector table forming a photoresist layer will be on the non-defective layer; a development step will be performed on the photoresist layer. Wherein, the photoresist layer described in the photoresist is a mask, and the above non-defective layer can also be located on another piece of photodefect. The photoresist layer is used for this opaque defect when the light defect is a light transmission defect. The mask will form a picture to fill this light transmission defect. Because the present invention uses light, not only does it need to be audible in a vacuum, but also obtains a high number of fixes, and can easily modify the embodiment: The present invention discloses a semiconducting method that uses optical pairs to prevent charge effects and has a large Area defects, no need to really cover the pattern in the reticle of the description of the present invention, the pattern can be repaired by the layer definition, and the photoresist can be patterned on the photomask, and the defect-free pattern of the photoresist layer is described above. An image will show the shortcomings and defects of the lack of description. In addition to the resistance, and removing this is a negative material filling pit pattern and defect, the defect map is transferred to the non-pitching range described. For the pattern bit, when the photoresist is opaque to the photoresist and covers the pattern of the coordinate pattern; the defect map is the defect map; the missing layer described in the same is an etch defect. And use the light to pass through this; then use the image alignment to use the above-mentioned photoresistance case to transfer to and use the previous photomask to trap the opaque engraved curtain. When the above-mentioned resist layer is a sinking defect, learn the photomask. The repair of pattern defects can be carried out to avoid the effect of charge effects: 3-system accuracy. In addition, the present invention is not limited to repairing a large area of defects. In the system process, the same quasi-method is used to determine the photomask with high accuracy: repair, so the air environment, and repair: can be effectively repaired, more detailed and damage repair = unlimited.博 ’may refer to the following description and

567531 V. Description of the invention (5) Match the diagrams in Figure 1 to Figure 11. Please refer to FIG. 1. FIG. 1 is a schematic diagram showing a projector according to a preferred embodiment of the present invention. The present invention is to perform optical mask repair on this projector table 1000. The projector stage 100 includes at least a light source 102, a reflective element 104, a reflective element 106, a reflective element 114, a reflective element 116, a reflective element 122, a reflective element 124, a lens 112, a lens 118, and a light detector 126. When repairing the photomask 108, first search and record the position coordinates of the defect pattern 120, and then find the position of the non-defective pattern 1 1 0 which is the same as the defect pattern 120 on the photomask 108. Coordinate and record it. Next, use the projector stage 100 to perform the image alignment step of the photomask 108. 'First place the photomask 108 on the light source 102, the reflective element 104, the reflective element 106, the reflective element 1 2 2, and the reflective element 1 2 4 and elements such as the photodetector 1 2 6 and elements such as the lens 112, the lens 118, the reflective element 114, and the reflective element 116. Among them, the photomask 108 is made of a transparent glass insulating material. The position of the photomask 108 is adjusted based on the recorded position coordinates of the non-defective pattern 11 0 and the defect pattern 12 0 so that the non-defective pattern 11 0 on the photomask 10 8 is located on the reflective element 106 and the lens. 11 2 on the light path, and the defect pattern 120 is located on the light path between the reflective element 12 and the lens 118. When the setting of the photomask 108 is completed, light rays 1 2 8 are emitted from the light source 10 2 to the reflective element 1 0 4, and the light rays 1 2 8 are reflected by the reflective element 1 0 4 and then directed toward the reflective element 1 0 6 After reflecting by the reflecting element 106, it is incident on the defect-free pattern 110 on the photomask 108. At this time, the mask 1 10 is moved so that the light 1 2 8 can sweep across the entire defect-free pattern 110. When the movement of the mask 10 8 causes the light 128 to be directed to the opaque pattern area of the defect-free pattern 110, the light 1 2 8 is subjected to the opaque pattern.

567531 V. Description of Invention (6)

The light area 128 cannot pass through the mask 108, and when the movement of the light mask 08 causes the light 128 to be directed to the light-transmitting pattern area of the defect-free pattern 110, the light 128 can pass through the light mask 108 and It is directed toward the focusing lens 112. The light rays 1 28 passing through the lens 112 are incident on the reflecting element 丨 丨 4, and after being reflected by the reflecting element i 丨 4, they are incident on the reflecting element 116. By the reflection of the reflecting element 114 and the reflecting element 116, the light rays 1 to 28 are turned and enter the lens. After being focused by the lens J8, the light 12 8 is directed toward the defect pattern 120 on the mask 10 8. When the light 1 2 8 passing through the non-defective pattern 11 〇 from the moving reticle 1 08 is reflected toward the opaque pattern region of the defect pattern 12 0, the light ray 12 8 is blocked by the opaque pattern region. It cannot pass through the reticle 108; and when the light from the moving reticle 108 passes through the defect-free pattern 11 0 1 2 8 and is reflected to the light-transmitting pattern area of the defect pattern 丨 2 0 'light 1 2 8 can pass through the photomask 108 and hit the reflective element 1 2 2. After being reflected by the reflective element 1 2 2, the light i 2 8 is incident on the reflective element 1 2 4 ′ and then incident on the photodetector 1 2 6. The photodetector 1 2 6 inspects the image formed by the incident light 1 2 8 to determine whether the image of the defect-free pattern u 〇 on the photomask 1 08 has been accurately projected on the defect pattern 120 on the photomask 108 . If the reading result of the photodetector 1 2 6 is no, adjust the positions of all the projection elements and lenses of the projector table 1000 until the image of the defect-free pattern on the photomask 108 is accurately projected on the photomask Up to the defect pattern 120 on 108. At this time, please refer to FIG. 2a and FIG. 2b, where FIG. 2a is a top view showing the defect-free pattern of the first preferred embodiment of the present invention, and FIG. 2b is a drawing along the 2a The cross-sectional view of the non-defective pattern of the figure is obtained by the I -1 section line. In the first preferred embodiment of the present invention, the defect-free pattern 110 and at least include an opaque pattern 130 and a transparent pattern 132. Where ‘as the first gb

Page 10 567531 V. Description of the invention (7) As shown in the figure, the opaque pattern 13 0 is composed of a opaque material, such as chromium, formed on the reticle 10 8, while the transparent pattern 1 3 2 is Unmasked area of photomask 108. Next, please refer to FIG. 3a and FIG. 3a, where 3a® is a top view showing a defect pattern of the first preferred embodiment of the present invention, and FIG. 3b is a defect pattern along FIG. 3a A cross-sectional view of the π-Π section line.

In the first preferred embodiment of the present invention, the defect pattern 120a includes at least an opaque pattern 140, a transparent pattern 142, and an opaque defect 144 on the transparent pattern 142. As shown in FIG. 3b, the opaque pattern 140 is composed of an opaque material, such as chromium, formed on the reticle 108, and the opaque pattern 1 4 2 is unmasked by the reticle 108. Areas, and the opaque defects 1 4 4 are additional opaque materials formed on the light-transmitting pattern 14 2, so that the areas where the light-transmitting pattern ι42 should be transparent cannot be transmitted. After the image alignment steps of the defect-free pattern π0 and the defect pattern 120 on the photomask 108 are completed, the defect-free pattern u 0 can be used for optical repair of the defect pattern 1 2 0.

In the first preferred embodiment of the present invention, the defect pattern 120a (representing the defect pattern 120) is repaired with a defect-free pattern i & (representing the defect-free pattern 11). Please refer to FIG. 6 to FIG. 6, where FIGS. 4 to 6 are cross-sectional views illustrating a repair process of a defect pattern of a preferred embodiment of the present month. + To form the defect-free pattern u0a of FIG. 2a and that of FIG. 3a = image pair: then, as shown in FIG. 4, firstly, for example, apply a photoresist layer 146 to cover a part of the photomask 108 and The defect pattern " is the opaque circle covering the defect pattern 12a.

567531

Material of the photoresist layer 146 5. The description of the invention (8) item 142 and the opaque defect 144. Among them may be, for example, a positive type photoresist. Then, the projection step of the image of the defect-free pattern noa is performed by using the projector platform 100 of FIG. 1 to project the image of the defect-free pattern UOa onto the photoresist layer η6 lacking the pattern 120a. Among them, the step of projecting the image of the defect-free pattern 11a firstly emits light green 128 from the light source 102 to the reflecting element 丨 0 4 and then reflects it toward the reflecting element i06. After the light i28 is reflected by the reflective element ι〇6, the light i28 is directed to the photomask 108, and the photomask 108 is moved in a predetermined direction, so that the light 128 can pass through the defect-free pattern on the photomask 108 11 〇a, and an image of a defect-free pattern 110a is generated. The generated image of the defect-free pattern 110a is focused by the lens 112 and then projected onto the reflective element 114, and is reflected toward the reflective element 116. Then, the image generated by the non-defective pattern 11 0 a is incident on the lens 118 by the reflection of the reflective element 116, and is focused and projected on the photoresist layer 146 of the defect pattern 120a. The image is transferred to the photoresist layer 146 above the defect pattern 120a, and a part of the photoresist layer 146 is exposed. Since the image of the non-defective pattern no a is transferred to the photoresist layer 146, the image alignment of the non-defective pattern 11a and the defect pattern 120a has been completed, so the image of the non-defective pattern ii〇a can be accurately Transfer to the photoresist layer 146 above the defect pattern 120a. After the image of the defect-free pattern 110a is accurately exposed on the photoresist layer 146, since the material of the photoresist layer 146 is a positive photoresist, the exposed photoresist layer 146 can be removed by, for example, development, and The photoresist layer 146 above the defect pattern 120a is provided with a pattern of the defect-free pattern 110a. Because, when the light 128 scans the opaque pattern 130 of the defect-free pattern 110a, it will be affected.

Page 12 567531 V. Description of the invention (9) ~------ It can't pass through the photomask 8 and hit the photoresist layer when it is blocked. Thus, the photoresist layer 146 above the opaque pattern 14o of the defect pattern a corresponding to the opaque pattern 13o of the defect-free pattern 110a at position f will not be exposed. Therefore, the residual photoresist layer 1 4 6 'after the development step' only covers the opaque pattern 14 of the defect pattern 1 2 ^ a, and exposes the opaque defect I " and the light transmitting case 142, forming The structure shown in Figure 5. Next, using a method such as etching and using the photoresist layer 46 as a mask, the opaque defects 144 are removed, and the light-transmitting pattern 142 is exposed below. Then, the residual photoresist layer 146 is removed, and the opaque pattern 14 is exposed.

Figure 6 shows that at this time, 'the opaque defect of the photomask 1 08 has been removed 144 °. There is no repair pattern. This feature is that the same pattern on the same photomask can be used to optically dent the same pattern. Repair, so smooth and efficient large area defects on the mask. However, it is worth noting that the present invention can also use different photomasks to optically repair the same pattern with defects, which is limited to the same photomask. ^ = Refer to Figures 7a and 7b at the same time, where Figure 7a is a top view of the non-defective pattern of the second preferred embodiment, and Figure 7h

Section 2 obtained by drawing the Gua-III section line without the defect-free pattern of Fig. 7 & In the second preferred embodiment of the present invention, the defect-free pattern 110 includes at least an opaque pattern 150 and a transparent pattern 152. Similarly, the light-transmitting pattern 150 is formed of an opaque material formed on the photomask 108, for example, and the light-transmitting pattern 152 is an unshielded area of the photomask 108. ,

Page 13

567531 V. Description of the Invention (ίο) Next, please refer to FIG. 8a and FIG. 8b together, where FIG. 8a is a top view showing a defect pattern of the second preferred embodiment of the present invention, and FIG. 8b is The margin shows a cross-sectional view taken along the iv-IV section line of the defect pattern in Fig. 8a. In the second preferred embodiment of the present invention, the defect pattern 120b includes at least an opaque pattern 160, a permeable pattern 162, and a opaque defect 164 on the opaque pattern 160. Among them, the opaque pattern ι60 is also composed of an opaque material, such as chromium, formed on the reticle 108, and the opaque pattern 162 is an unshielded area of the reticle 108, and The light-transmitting defect 1 64 is a light-transmitting area formed by the omission of the light-transmissive material on the light-transmissive pattern 160. In the second preferred embodiment of the present invention, after the image alignment steps of the defect-free pattern 110 and the defect pattern 120 on the photomask are completed, the defect-free pattern 110 is used for optical repair of the defect pattern 120. In these two preferred embodiments, the defect-free pattern U 0b represents the defect-free pattern 110 of the first figure, and the defect pattern 120 b represents the defect pattern 120 of the first figure. Please refer to FIG. 1 and FIGS. 7a to 丨 丨, where FIGS. 9 to 丨 丨 are diagrams illustrating a repair process of a defect pattern of the second preferred embodiment of the present invention. Please refer to FIG. 9, after aligning the defect-free pattern 11 in FIG. 7 a on the image surface of the image pattern in FIG. 8 a, the defect pattern 1 2Ob in FIG. The mask § and the defect pattern: covering the opaque pattern 160, the transparent pattern, and the transparent defect 164 of the defect pattern 12Ob. The material of the photoresist layer 166 may be, for example, a photoresist. After Ma negative formed the photoresist layer 166, use the projector platform 100 of the second figure to perform defect-free 567531. V. Projection of the image of the αυ pattern 11 Ob to project the image of the defect-free pattern 11 OB to The photoresist layer 1 6 6 on the defect pattern 1 2 0 b. When the image of the defect-free pattern 110b is projected onto the photoresist layer 166 above the defect pattern 120b, the light is first emitted from the light source 102 to the reflective element 1 0 4 and then reflected to the reflective element 1 〇6 After being reflected by the reflective element 106, it is directed to the photomask 108. At this time, the mask i08 is moved in a predetermined direction, so that the light 128 can be scanned over the defect-free pattern 110b on the mask 108, and an image of the defect-free pattern 11 Ob is generated. After the image of the defect-free pattern (01) is focused by the lens 11 2, it is projected on the reflective element 11 4, and is reflected toward the reflective element 116. The image generated by the non-defective pattern 11 0b is reflected by the reflection element 11 16 into the lens 11 18 to be focused and projected on the photoresist layer 166 above the defective pattern i2 0b, thereby releasing the non-defective pattern 1 The image of i0b is transferred to the photoresist layer 16 6 above the defect pattern 120 b, and a part of the photoresist layer 16 6 is exposed. Because the image of the non-defective pattern n 0b is transferred to the photoresist layer 16 6, the image of the non-defective pattern 11 0b and the defect pattern 1 20b has been aligned, so the image of the non-defective pattern n 0b It can be accurately transferred to the photoresist layer 166 above the defect pattern 120b. After the image of the defect-free pattern 1 1 0b is accurately exposed on the photoresist layer 166, since the material of the photoresist layer 16 is a negative photoresist, the unexposed light can be developed by, for example, developing The resist layer 166 is removed, leaving the exposed photoresist layer 166. Because, when the light opaque pattern 150 of the defect-free pattern 150 is scanned, the light 128 is blocked and cannot pass through the photomask 108 to the photoresist layer 166. Thus, the photoresist layer 166 located above the opaque pattern 160 of the defect pattern 12 Ob corresponding to the opaque pattern 150 of the non-defective pattern 110b,

Page 15 567531 V. Description of the invention (12) The photoresist layer above the light transmission pattern 162 of the defect pattern 120b, which does not cause exposure, but only makes the position corresponding to the light transmission pattern 152 of the non-defective pattern 11 0b 1 6 6 Make an exposure. Therefore, after the developing step, the remaining photoresist layer 16 is only covered on the light-transmitting pattern 16 2 of the defect pattern 120b, and the light-transmitting defect 164 and the light-impermeable pattern ι60 are exposed, forming the same as the first one. The structure shown in the figure. Next, using a method such as deposition and using the photoresist layer 16 as a mask, the light-transmissive filling material 168, such as the same material as the light-transmissive pattern 160, is filled in the light-transmitting defect 164, and The light transmission defect 164 is prevented from transmitting light. Then, the remaining light steep layer 166 is removed, and the light-transmitting pattern 162 is exposed, as shown in FIG. 11 tf. At this point, the light transmission defect of the photomask iQ8 has been successfully completed. It should be noted that the corresponding optical side is shown. Therefore, in order to supplement the photomask effect, the present invention uses ions to simplify the production of the photomask of the present invention. The preferred point is the projector. The above-mentioned method of integrating the defect pattern of the same light above the household weight is a beam or electron beam path and equipment that has another advantage of Micro Motion, and another advantage is the defect-free phase. The light of the present invention is performed. The present invention No defect on the hood. As mentioned above, the present invention provides a positioning control that uses the same mask or does not use the accuracy of the optical image because the hair is not required to be true and then reduced because the hair has the same pattern, and the repair by the cover is not limited to the first The photomask repair in Figure 1 only needs to be accurately projected onto the image with the available pattern. One advantage is that the same pattern on the semiconductor process as the photomask is used to repair the alignment method, so electrical production can be avoided. Ming Zhi mask pattern repair is not carried out in a negative environment. Therefore, it can be cost-affordable for the purpose. The Ming system uses the same mask or different optical alignment methods to repair the light.

567531 V. Description of the invention (13) The defect pattern of the mask can easily and effectively repair large-area defects, and can be repaired multiple times according to the process requirements. The number of repairs is unlimited. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below.

Page 567531 diagrammatic illustration of the preferred embodiment of the present invention has been described in more detail in the preceding explanatory text with the following figures, where: = 1 is a projection of a preferred embodiment of the present invention The schematic diagram of the machine, 1 is a cross-sectional view showing the upper part 2b of the defect-free pattern of the first preferred embodiment of the present invention. Figure 2a of the defect-free pattern of the 1-1 cross-section of Figure 1-3 is a marginal view; $ 1, the top view of the defect pattern of the first preferred embodiment; The π-II profile of the case (Figures 4 to 6) is a one-step repairing process. The first preferred embodiment of the present invention is shown in Figure 7a. Figure 4: A top view; Figure 3b is a cross-sectional view of the defect pattern shown in the Π-Π section line of the defect pattern. Figure 7a is a drawing of I; view; a second preferred embodiment of the present invention. ~ ^ 丨 7b 阖 is a cross-sectional view taken along No. 71; a is obtained from the Π-Π section line of the non-defective pattern of a. ^ 8a is the edge of the present figure—the top view of the defect pattern of the preferred embodiment f Figure 8b is a cross-sectional view; and the IV-IV section line of the & defect pattern is obtained: Figures 9 to 11 are drawn-,, the repair process section, and the stomach are not the second of the present invention. Defect map of the preferred embodiment

Page 18 567531

The diagram on page 19 is a brief explanation of the drawing number. 100 Projector table 102 Light source 104 Reflective element 106 Reflective element 108 Photomask 110 Defect-free pattern 110a Defect-free pattern 110b Defect-free pattern 112 Lens 114 Reflective element 116 Reflective element 118 Lens 120 Defect pattern 120a Defect pattern 120b Defect pattern 122 Reflective element 124 Reflective element 126 Photodetector 128 Light 130 Opaque pattern 132 Translucent pattern 140 Opaque pattern 142 Translucent pattern 144 Opaque defect 146 Photoresist layer 150 Impervious Light pattern 152 Light transmission pattern 160 Light transmission pattern 162 Light transmission pattern 164 Light transmission defect 166 Photoresist layer 1 6 8 Filling material

Claims (1)

567531 VI. Application for patent scope 1. A method for repairing a photomask using the same pattern in a semiconductor process, wherein the photomask includes at least a defect pattern, and the defect pattern includes at least one defect, and the semiconductor process uses the same pattern The method for repairing the photomask at least includes: providing a defect-free pattern, wherein the defect-free pattern is the same as the defect pattern but does not have the defect; using a projector to perform an image alignment step of the defect-free pattern and the defect pattern Forming a photoresist layer to cover the defect pattern; Using the projector table to transfer an image of the defect-free pattern to the photoresist layer of the defect pattern; and performing a developing step to transfer the defect-free pattern to the photoresist layer, wherein the photoresist layer is defined The defect range; and using the photoresist layer as a mask to repair the defect. 2. A method for repairing a photomask using the same pattern in a semiconductor process as described in item 1 of the scope of patent application, wherein the defect-free pattern is located on the photomask. 3. A method for repairing a photomask using the same pattern in a semiconductor process as described in item 1 of the patent application scope, wherein the defect-free pattern is located on another photomask. 4. The method of repairing a photomask using the same pattern in the semiconductor process described in item 1 of the scope of patent application, wherein the material of the photoresist layer is a positive photoresist. Page 20 567531 VI. Application for Patent Scope 5. The method of repairing the Light Army as described in Item 4 of the Driveway Lin System described in the Scope of Application for Patent 4, where the body is trapped as an opaque defect with the same figure . Secondly, as described in the second paragraph, the scope is as follows: In the semi-guided ship manufacturing process, the same pattern is used and the photoresist layer is used as an etching mask to remove the opaque defect. Λ The method of using the same figure in the semiconductor manufacturing process described in item 专利 1 of the patent application to fill the photomask, wherein the material of the photoresist layer is a negative photoresist. ^ The method for repairing a photomask using the same method in the semiconductor process described in item 7 of the scope of patent application, wherein the defect is a light transmission defect. 9 · The method for repairing the photomask using Phase 5 in the semiconductor manufacturing process described in item 8 of the scope of the patent application, wherein the step of repairing the defect is to use a 2-pattern method and fill an opaque material into the transparent A light defect that sinks the light transmission defect. Wu Fan Full Coverage 10 · A method for repairing a photomask using a phase β pattern in the semiconductor process described in item 1 of the scope of patent application, wherein the projector table includes at least one, a gate source, a reflection system, and a light Detector. Yiguang 1 1 · The method of repairing the photomask using the same 567531 in the semiconductor process described in item 10 of the patent application scope VI. Patent application scope '~ ^ — = case, wherein the projector platform is used to perform the When the defect pattern is aligned with the image of the defect pattern, it further includes at least: using the light source to emit a light to the reflection system; using the reflection system to scan the light in a direction through the light on the photomask. The defect-free pattern is reflected and scanned in the direction to pass through the defect on the reticle and enter the light detector; and 〃 using the light detector to detect the received light so that the image of the defect-free pattern and the The defect pattern is aligned. 〃 12 · A method for repairing a photomask using the same pattern in the semiconductor manufacturing process described in item 10 of the scope of patent application, wherein the projector table is used to transfer the image of the non-defective pattern to the photoresist of the defective case The step of the layer further includes at least: using the light source to emit to the reflection system, and using the reflection system to cause the other light to have the non-defective pattern and reflect it to the other photoresist layer, and then to the non-defective layer. Another light; and a method for repairing the photomask by transferring the image passing through the case on the photomask in the other direction / direction through the photomask on the defect pattern, and using the at least part of the defect pattern in the process The same pattern is used to repair the same pattern as the defect pattern. The same pattern is used in a semiconductor process. The mask includes at least one defect. The case includes an opaque defect. Provide a defect-free pattern, wherein the defect-free pattern 567531 6. Apply for a patent but do not have the opaque defect; use a projector table to perform an image alignment step between the non-defective pattern and the defect pattern; use the projector table to form a photoresist layer in part of the On the defect pattern, wherein the photoresist layer has the defect-free pattern, and the photoresist layer defines a range of the opaque defect; and repairing the defect pattern. 1 4. A method for repairing a photomask using the same pattern in a semiconductor process as described in item 13 of the scope of patent application, wherein the defect-free pattern is located in the photomask 1 5. As described in item 13 of the scope of patent application A method for repairing a photomask using the same pattern in a semiconductor process, wherein the defect-free pattern is located on another photomask. 16. The method for repairing a photomask using the same pattern in a semiconductor process as described in item 13 of the scope of patent application, wherein the material of the photoresist layer is a positive photoresist. 1 7. The method for repairing a photomask using the same pattern in the semiconductor manufacturing process as described in item 13 of the scope of the patent application, wherein before performing the image alignment step, at least including recording the defect pattern on the photomask. A target for opaque defects and a coordinate for recording the defect-free pattern. Page 23 567531 6. Application for patent scope 1 8. The method for repairing the photomask using the same pattern in the semiconductor process described in item 13 of the scope of patent application, wherein the projector table includes at least a light source, a reflection system, And a photodetector. 19. The method for repairing a photomask using the same pattern in a semiconductor manufacturing process as described in item 18 of the scope of patent application, wherein when the projector table is used to perform the image alignment step of the defect-free pattern and the defect pattern, It also includes at least: using the light source to emit a light to the reflection system; using the reflection system to scan the light through the defect-free pattern on the photomask in one direction and reflecting, and scanning the light on the photomask in the direction; The defect pattern enters the light detector; and the light detector is used to detect the received light, so that the image of the defect-free pattern is aligned with the defect pattern. 20. The method for repairing a photomask by using the same pattern in the semiconductor process described in item 18 of the scope of patent application, wherein the step of forming the photoresist layer by using the projector table further includes at least: forming a photoresist film Covering the defect pattern; using the projector platform to transfer an image of the defect-free pattern to the photoresist film of the defect pattern; and performing a development step to transfer the defect-free pattern to the photoresist layer Medium 0 Page 24 567531 6. Application for patent scope 21. The method for repairing a photomask using the same pattern in the semiconductor process described in item 20 of the scope of patent application, wherein the non-defective pattern of the technology is used to puncture the The step of transferring the image to the photoresist film of the defect pattern further includes at least: using the light source to emit another light to the reflection system; and using the reflection system to cause the other light to pass through the photomask in another direction. The defect-free pattern is reflected and passes through the photoresist film on the defect pattern in the other direction, and then the image of the defect-free pattern is transferred to the photoresist film. 22. The method for repairing a photomask using the same pattern in a semiconductor process as described in item 13 of the scope of the patent application, wherein the step of removing the opaque defect is a neodymium etching method. "2 3 · —The same pattern is used in a semiconductor process to repair at least one defect pattern on the photomask, and the method of the photomask includes a light transmission defect, and at least the photomask on the recessed pattern in the semiconductor process The method at least includes: repairing the same pattern to provide a defect-free pattern, wherein the defect-free pattern is equal to but without the light-transmitting defect; and the defect pattern is the same A projector platform is used to perform the defect-free pattern and alignment steps; an image of Λ and a recessed pattern forms a photoresist layer to cover the defective pattern; and a projector platform is used to shadow one of the defect-free pattern a ~ Image transferred to this defect map Page 25 567531 6. Application of the patent scope ^ ~ — on the photoresist layer; performing a development step to transfer the defect-free pattern to the photoresist layer, and define the light transmission on the defect pattern The range of the defect; the light-transmitting defect is filled with 丄, so that an opaque material completely covers the light-transmitting defect. 24. A method for repairing a photomask using the same pattern in a semiconductor process as described in item 23 of the scope of patent application, wherein the defect-free pattern is located on the photomask. 25. A method for repairing a photomask using the same pattern in a semiconductor process described in item 23 of the patent application scope, wherein the defect-free pattern is located in another photomask 26. A semiconductor process described in item 23 of the patent application scope In the method for repairing a photomask using the same pattern, the material of the photoresist layer is a negative photoresist. = 7 · The method for repairing a photomask using the same to f in the semiconductor manufacturing process described in item 23 of the scope of patent application, wherein before performing the image alignment step, it further includes recording the defect pattern on the photomask. A ticket with a defect in light transmission records the rubbish mark of the defect-free pattern with τ >. 2 8 κ • A method for repairing a photomask using the same 567531 pattern in a semiconductor process as described in item 23 of the scope of patent application, wherein the projector table includes at least a light source, a reflection system, and a light Detector. 29. The method for repairing a photomask using the same pattern in a semiconductor manufacturing process as described in item 28 of the scope of application for a patent, wherein when the projector table is used to perform the image alignment step of the defect-free pattern and the defect pattern, At least including: using the light source to emit a light to the reflection system; using the reflection system to scan the light through the defect-free pattern on the photomask in one direction and reflecting, and scanning the defect on the photomask in the direction After entering the pattern, it enters the light detector; and uses the light detector to detect the received light, so that the image of the defect-free pattern is aligned with the defect pattern. 30. The method for repairing a photomask using the same pattern in a semiconductor manufacturing process as described in item 28 of the scope of patent application, wherein the projector table is used to transfer the image of the defect-free pattern to the photoresist layer of the defect pattern The above steps further include at least: using the light source to emit another light to the reflection system; and using the reflection system to cause the other light to pass through the defect-free pattern on the reticle in another direction and reflect it to the other The / direction passes through the photoresist layer on the defect pattern, and further transfers the image of the defect-free pattern to the photoresist layer. 3 1. The method of using the same 567531 in the semiconductor process described in item 23 of the scope of patent application 6. Pattern of patent application to repair the photomask, wherein the step of filling the light transmission defect is a deposition method. 1HI · Page 28