TW565624B - Method for sputtering metal film on surface of silicone rubber - Google Patents

Method for sputtering metal film on surface of silicone rubber Download PDF

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Publication number
TW565624B
TW565624B TW90127048A TW90127048A TW565624B TW 565624 B TW565624 B TW 565624B TW 90127048 A TW90127048 A TW 90127048A TW 90127048 A TW90127048 A TW 90127048A TW 565624 B TW565624 B TW 565624B
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Taiwan
Prior art keywords
sputtering
metal
substrate
film
silicone rubber
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TW90127048A
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Chinese (zh)
Inventor
Wen-Chi Li
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Sambest Corp
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Priority to TW90127048A priority Critical patent/TW565624B/en
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Publication of TW565624B publication Critical patent/TW565624B/en

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Abstract

A method for sputtering a metal film on the surface of a silicone rubber comprises a preparation step, a high temperature step, a coating step, and a sputtering step; the preparation step comprises preparing a transport device, a high temperature furnace, a coating device, and a sputtering device. The high temperature step is used to break the bondings on the surface of a silicone rubber to form a conglomerate body; in the coating step, a layer of adhesive is coated on the conglomerate body to form a substrate; finally, in the sputtering step, a metal film is formed on the substrate such that the surface of the silicon rubber is plated with a metal film to coat a film on the surface of the substrate of the silicone rubber material thereof in order to overcome the drawback where the surface of a silicone rubber can not be plated with metal and only an adhesion process can be used to achieve such an objective while the attached metal film is easy to peel off and the adhesion process has a low efficiency; the invented process can be widely used in the production of various products to improve the quality and function of the products.

Description

^>65624 A? 5 10 15 經濟部智慧財產局員工消費合作社印製 20 發明說明(^【發明領域】 分浙發^有關於—種製程,特別是指-種可於石夕橡膠 :的本體表面鍍上一金屬薄膜’且可廣泛地運用在多種 品的製造上’進而改善該等產品之品質,且有效提高生 產效率的於石夕橡膠表面上濺鑛金屬薄膜之製程。 【習知技藝說明】 金屬具有光澤、硬度高’且可導電等特性,也是業界 吊運用的特性,將其他材質之表面鑛上一層金屬,可使表 面-有光澤,而增添美觀,並增加硬度,亦可於非導電材 質上鍍上-層金屬而可形成導電層,可增加使用上之功能 性且卉夕材質如合金或玻璃均可利用電鍍之技術,於表 面上鑛上一層金屬層,亦可大量生產,但是,石夕橡膠材質 之物體則無法制電鍍之方式將金屬鑛於表面上,故所有 的石夕橡膠製品例如-般手機或計算機等之按鍵表面均無光 澤,而影響外觀,且無法以金屬層作為保護層,使該種軟 性之石夕橡膠材質之按鍵容易破損,因此有許多業者將上述 之按鍵改以塑膠或其他較堅硬之材質製造,導致矽橡膠材 質在運用上受到很大的限制。 目前業界製造具有絕緣及導電的矽橡膠物體,如計算 機之按鍵,參閱第一圖所示,係於該按鍵丨丨相對該計算機 (圖中僅示出部分構件)之電路板12的底部黏結一導電粒 13,當使用者按壓該按鍵n之頂部時,可使該按鍵下壓, 該導電粒13則可觸壓該電路板12,而產生相對之作動, 然而該導電粒13於高電壓時之導電性係不穩定,且該導電 請先閱讀背面之注意事項再^寫本頁) 衣 -------訂---------% 第4頁 本紙張尺度綱中關家標準(CNSM4規格⑵G X 297公f ) 565624 經濟部智慧財產局員工消費合作社印製 五、發明說明( 10 15 20 上相當不易且°費時^:按鍵11底部,黏合之作業進行 ⑽之限:亦:!:產效率;故無法在-橡膠製品 產品製造上較為麻Γ夕橡膠製品之品質與功能,且 【發明概要】 因此,本發明之目的,即 表面上濺鍍—層金屬 ’、可於矽橡膠材質 之品質及生產料4膜之製程,俾能提高石夕橡膠之產品 膠表1::之另—目的’在提供一種可廣泛運用的於石夕橡 膠表面上濺鍍金屬薄膜之製程。 ^稼 於疋,本發明於矽橡膠表面上濺鍍金屬薄膜之製裎, 依序為準備步驟羁錢之氣私, 、 皿^驟、塗佈步驟,以及濺鍍步驟。 在準備步驟中’準備一輸送裝置,一高溫爐,一塗佈 裝置’以及一濺鍍裝置。 該高溫步驟係於該高溫爐中,以高溫破壞矽橡膠之本 體表面之鍵結,而形成一具有較高聚結其它分子能力的聚 結本體;並利用該塗佈步驟,於該塗佈裝置中將該聚結本 體上塗佈-層黏膠,使該黏膠可緊密地黏附於該聚結本體 上而形成一底材,最後,於該濺鍍裝置中進行濺鍍步驟, 以多數原子撞擊一金屬靶材,而產生多數個靶原子,且該 等靶原子可被吸附於該底材之表面上,並產生沉積現象而 於該底材上形成一金屬薄膜;所以可經由上述之步驟於矽 橡膠材質的本體表面上濺鍍金屬薄膜,而增進矽橡膠製品 的品質與功能性,且本發明之製程可廣泛地運用在多種產 第 頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 565624 Λ7 五、發明說明( 10 15 經濟部智慧財產局員工消費合作社印製 20 品的製造上,提高經濟效益。 【圓式之簡單說明】 本發明之其他特徵及優點,在以下配合參考圖式之較 佳實施例的詳細說明中,將可清楚的明白,在圖式中: 第一圖是一般按鍵之示意圖; 第二圖是本發明較佳實施例之流程圖; 第三圖是本發明較佳實施例所運用之濺鍍設備之示意 園, 第四圖是本發明較佳實施例用於按鍵底部表面上鍍一 導電層之示意圖; 第五圖是本發明較佳實施例用於按鍵表面上鍍一保護 膜之示意圖;以及 第六圖是本發明較佳實施例所製造的電路板示意圖。 【較佳實施例之詳細說明】 參閱第二、三圖,本發明之製程依序為準備步驟20、 咼溫步驟21、塗佈步驟22、濺鍍前置步驟23、轟撞步驟 24、傳遞步驟25,以及沉積步驟26。 於準備步驟20中,準備一為輸送帶的輸送裝置2〇1 , 並在輸送裝置201上間隔設置一高溫爐2〇2、一塗佈裝置 2〇3,以及一濺鍍裝置2〇4,如第三圖所示,該濺鍍裝置:〇4 為一具有一氣體入口 205及一氣體出口 2〇6的反應室,且 該濺鍍裝置204的一内壁面上置有一金屬靶材2〇^,並藉 由该乳體出口 206接一真空系統(圖中未示出)將濺鍍裝置 204内31氧氣及水氣等雜質抽離。。 第6頁 本紙張尺度顧+關家標準(CNS)A4規格⑵Q X 297公复)— 請 先 閱 讀 背 δ 之 注 意 事 項^ &656; 65624 A? 5 10 15 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the People's Republic of China. 20 Description of the invention (^ [Field of Invention] Divided by Zhejiang. The surface of the body is plated with a metal film and can be widely used in the manufacture of a variety of products' to improve the quality of these products and effectively increase the production efficiency of the process of sputtering metal films on the surface of Shixi rubber. Technical Description] Metal has the characteristics of gloss, high hardness, and conductivity. It is also a characteristic used by the industry. The surface of other materials can be coated with a metal to make the surface shiny, and increase the appearance and hardness. A conductive layer can be formed by plating a layer of metal on a non-conductive material, which can increase the functionality. The material such as alloy or glass can be electroplated, and a metal layer can be deposited on the surface. Production, but Shishi rubber materials can not be electroplated to place metal ore on the surface, so all Shixi rubber products such as mobile phones or computer keys The surface is dull, which affects the appearance, and the metal layer cannot be used as a protective layer, which makes the soft stone rubber key easily broken. Therefore, many companies have changed the above keys to plastic or other harder materials. As a result, the use of silicone rubber materials is greatly restricted. At present, the industry manufactures silicone rubber objects that have insulation and conductivity, such as the keys of a computer. A conductive particle 13 is adhered to the bottom of the circuit board 12 of the component). When the user presses the top of the button n, the button can be pressed down, and the conductive particle 13 can touch the circuit board 12 and Relative action occurs, however, the conductivity of the conductive particles 13 at high voltage is unstable, and the conductivity please read the precautions on the back before writing this page) Clothing ------- Order ---- -----% Page 4 Standards of Guanjia in this paper's standard outline (CNSM4 specification ⑵G X 297 male f) 565624 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (10 15 20 is quite difficult and ° Time-consuming ^: 11 buttons The limit of the progress of the bonding operation: also:!: Production efficiency; therefore, it is not possible to compare the quality and function of rubber products in the manufacture of rubber products, and [Summary of the Invention] Therefore, the object of the present invention is the surface Sputtering—Layer metal ', can be used in the quality of silicone rubber material and the production process of 4 films, which can improve the product rubber of Shixi Rubber. Table 1 :: Another-purpose' is to provide a widely used Yushi The process of sputtering a metal film on the surface of a rubber. ^ In the present invention, the method for sputtering a metal film on a surface of a silicon rubber is sequentially prepared in the following steps: a preparation step, a coating step, and a coating step. And a sputtering step. In the preparation step, 'prepare a conveying device, a high temperature furnace, a coating device' and a sputtering device. The high-temperature step is performed in the high-temperature furnace, and the bonding of the surface of the silicone rubber body is destroyed at a high temperature to form a coalesced body having a higher ability to coalesce other molecules; and the coating step is used in the coating device A layer of adhesive is applied to the coalescing body to make the adhesive adhere tightly to the coalescing body to form a substrate. Finally, a sputtering step is performed in the sputtering device, with most atoms A metal target is impacted to generate a plurality of target atoms, and the target atoms can be adsorbed on the surface of the substrate and a deposition phenomenon can be generated to form a metal thin film on the substrate; therefore, the above steps can be passed Sputtering a metal film on the surface of the silicone rubber body to improve the quality and functionality of the silicone rubber product, and the process of the present invention can be widely used in a variety of products. This paper applies the Chinese national standard (CNS) A4 specification. (210 X 297 mm) 565624 Λ7 V. Description of the invention (10 15 Manufacturing of 20 products printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs to improve the economic benefits. [Simplified explanation of round form] Other features and advantages of the invention will be clearly understood in the following detailed description of preferred embodiments with reference to the drawings. In the drawings: The first diagram is a schematic diagram of a general key; the second diagram is a comparison of the present invention. The flowchart of the preferred embodiment; the third diagram is a schematic diagram of the sputtering equipment used in the preferred embodiment of the present invention, and the fourth diagram is a schematic diagram of the preferred embodiment of the present invention for plating a conductive layer on the bottom surface of the key; The fifth diagram is a schematic diagram of a preferred embodiment of the present invention used to plate a protective film on the key surface; and the sixth diagram is a schematic diagram of a circuit board manufactured by the preferred embodiment of the present invention. [Detailed description of the preferred embodiment] See In the second and third diagrams, the manufacturing process of the present invention is a preparation step 20, a soaking step 21, a coating step 22, a pre-sputtering step 23, a bombarding step 24, a transfer step 25, and a deposition step 26. In step 20, a conveyor device 201 is prepared as a conveyor belt, and a high-temperature furnace 202, a coating device 203, and a sputtering device 204 are arranged on the conveyor device 201 at intervals. As shown in the three figures, the sputtering device : 〇4 is a reaction chamber having a gas inlet 205 and a gas outlet 206, and a metal target 20 is placed on an inner wall surface of the sputtering device 204, and is connected through the milk outlet 206 A vacuum system (not shown in the figure) extracts impurities such as 31 oxygen and water vapor in the sputtering device 204. Page 6 This paper size Gu + Guan Jia Standard (CNS) A4 specification ⑵Q X 297 public copy— Please read the notes on δ first

訂 it 565624 經濟部智慧財產局員工消費合作社印製 A7 __B7 五、發明說明(6) 第 9 頁 【元件標號對照】 20 準備步驟 201 輸 送 裝 置 202 高 溫 爐 203 塗 佈 裝 置 204 濺 鍍 裝 置 205 氣 體 入 口 206 氣 體 出 口 207 金 屬 靶 材 21 1¾ 溫 步 驟 22 塗 佈 步 驟 23 濺 鍍 前 置 步 驟 24 轟 撞 步 驟 25 傳 遞 步 驟 26 沉 積 步 驟 31 本 體 32 聚 結 本 體 33 底 材 7 按 鍵 71、 72 金 屬 薄 膜 8 電 路 板 9 矽 橡 膠 電 路 板 91 板 體 91 電 路 佈 局 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Order it 565624 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __B7 V. Description of the invention (6) Page 9 [Comparison of component numbers] 20 Preparation steps 201 Conveying device 202 High temperature furnace 203 Coating device 204 Sputtering device 205 Gas inlet 206 Gas outlet 207 Metal target 21 1¾ Temperature step 22 Coating step 23 Sputtering step 24 Bomb step 25 Transfer step 26 Deposition step 31 Body 32 Coalescing body 33 Substrate 7 Key 71, 72 Metal film 8 Circuit board 9 Silicone rubber circuit board 91 Board body 91 Circuit layout This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

565624 έΐ ι· 一種於矽橡膠表面上濺鍍金屬薄膜 膠材質tt 、之製程,係於一矽橡 材質之本體表面上濺鍍金屬薄膜,依序 準備步驟:準備一輸送該本〆、,”、、 一 燼,_泠# # $ 之輸送裝置,一鬲溫 爐,塗佈裝置,以及一濺鍍裝置; 高溫步驟,於該高溫爐中, 洚#阁从一 以攝氏60度至攝氏1〇〇 度靶圍的咼溫破壞該本體表 體; 心鍵結,而形成一聚結本 塗佈步驟,於該塗佈裝置中 /JU ^ 寻I、、、口本體表面上塗 佈一層黏膠而形成一底材;以及 :鍵步驟’於該繼置中’利用多數個原子撞擊 金屬把材,而產生多數個輩巴yg 1玍夕歎1U耙原子,並令該等靶原子沉 積於上述塗佈有黏膠的底材表 -金屬薄膜。 i而於該底材上形成 2.如申請專利範圍第w所述之於石夕橡膠表面上藏鍍金屬 薄膜之製程’其中’該準備步驟中的輸送裝置係可為一 輸送帶’而該賤鍍裝置為具有-氣體入口及一氣體出口 之反應室,而濺鍍裝置内之一内壁面上,置有一金屬靶 材’並將賤錢裝置内之雜質由該氣體出口抽離。 3·如申請專利範圍第丨項所述之於石夕橡膠表面上濺鍍金屬薄 膜之製程,其中,該濺鍍步驟依序包含有濺鍍前置步驟、 轟撞步驟、傳遞步驟,以及沉積步驟;該濺鍍前置步驟 係利用該輸送裝置將底材輸送置於該濺鍍裝置中相對該 金屬乾材的壁面上;該爲撞步驟,將惰性氣體以高壓充 入該反應室中,並形成原子轟撞在該金屬乾材的表面 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 第10頁 565624565624 ΐ 一种 · A process of sputtering metal thin film adhesive material tt on the surface of silicon rubber. It is a process of sputtering metal thin film on the surface of a body made of silicon rubber. The preparation steps are: 、, 一 EMS , _ Ling # # $ The conveying device, a heating furnace, a coating device, and a sputtering device; in a high-temperature step, in the high-temperature furnace, 阁 # 阁 from 60 ° C to 1 ° C The temperature of the target's ambient temperature destroys the body surface; the heart bonds to form a coalescing coating step. A coating layer is applied to the surface of the body in the coating device. Glue to form a substrate; and: the bonding step 'in the relay' uses a majority of atoms to strike the metal handle to generate a plurality of generations of yg 1 玍 1 sigh 1 U rake atoms, and the target atoms are deposited on The above-mentioned adhesive-coated substrate sheet-metal film. I was formed on the substrate 2. The process of hiding a metal-plated film on the surface of Shixi rubber as described in the scope of application for patent w'wherein 'the preparation The conveying device in the step may be a conveyor belt 'and The base plating device is a reaction chamber with a gas inlet and a gas outlet, and a metal target is placed on an inner wall surface of the sputtering device, and impurities in the base money device are extracted from the gas outlet. The process of sputtering a metal film on the surface of Shixi rubber as described in item 丨 of the scope of patent application, wherein the sputtering step includes a sputtering pre-step, a bombing step, a transfer step, and a deposition step in order. The pre-sputtering step is to use the conveying device to transport the substrate on the wall surface of the sputtering device opposite to the metal dry material; this is a collision step, inert gas is charged into the reaction chamber under high pressure, and Forms atomic bombardment on the surface of the metal dry material. The paper size applies the Chinese National Standard (CNS) A4 (21 × 297 mm). Page 10 565624 而取代該金屬靶材表 & ^ ^ ^ ^ 原子,而擊出多數個靶原子; 该專靶原子往底材方向傳遞,最 後於 >儿積步驟中,該蓉馬工 Λ寺原子則吸附於該底材的表面上, 並經過長晶、晶粒成長、曰 扪表面上 ^日日粒聚結 '縫道填補,以及沉 積膜長成,而形成一金屬薄膜。 4.如申請專利範圍第3項所述之於石夕 膜之製程,其中,該轟撞 ::鑛金屬薄 之惰性氣體為氦氣。 +所充入於该機鑛裝置中 本紙張尺度適用中國國家標準(CNS) Α4規格(210χ 297公釐) 第11頁Instead of replacing the metal target table & ^ ^ ^ ^ atom, and hitting many target atoms; the special target atom is transferred to the substrate direction, and in the > child product step, the Rongmagong Λ temple atom is It is adsorbed on the surface of the substrate, and is filled by growing crystals, growing grains, filling the gaps on the surface of the substrate, and growing the deposited film to form a metal thin film. 4. The process for the Shi Xi film as described in item 3 of the scope of the patent application, wherein the collision: the thin inert gas of the mineral metal is helium. + Filled in this machine and mine device The paper size is applicable to China National Standard (CNS) A4 specification (210 × 297 mm) Page 11 A9 B9 C9 D9 、11 -12 第一圖A9 B9 C9 D9, 11 -12 First picture 20 21 22 23 24 25 26 (請先閲讀背面之注意事項再行繪製)20 21 22 23 24 25 26 (Please read the notes on the back before drawing) 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐)This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
TW90127048A 2001-10-31 2001-10-31 Method for sputtering metal film on surface of silicone rubber TW565624B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103805951A (en) * 2012-11-09 2014-05-21 台积太阳能股份有限公司 Solar cell formation apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103805951A (en) * 2012-11-09 2014-05-21 台积太阳能股份有限公司 Solar cell formation apparatus and method
TWI486473B (en) * 2012-11-09 2015-06-01 Tsmc Solar Ltd Apparatus for forming a material film on a solar cell substrate
CN103805951B (en) * 2012-11-09 2016-05-04 台积太阳能股份有限公司 Solar cell forms apparatus and method

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