TW564474B - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus processes a substrate such as a semiconductor wafer by supplying a processing liquid. The substrate processing apparatus includes a substrate holder for holding and rotating a substrate, a lower surface processing unit for processing a lower surface of the substrate by supplying a processing liquid to the lower surface of the substrate, and an outer circumferential edge processing unit for processing an outer circumferential edge of the substrate by supplying the processing liquid to the outer circumferential edge of the substrate. The substrate processing apparatus further includes a gas supply unit for supplying a gas to an upper surface of the substrate.

Description

564474 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a substrate processing apparatus, particularly a method for supplying a specific processing liquid to a substrate such as a semiconductor wafer, a glass substrate or a liquid crystal panel for an etching process or other processes Substrate processing equipment. [Previous Technology] In a semiconductor process using a substrate such as a semiconductor wafer to manufacture a semiconductor device, the step of forming a thin film is completed on the substrate, and the thin film is formed by including chemical reduction, chemical vapor deposition (Chemical Vapor Deposition, CVD), electroplating, and other different processes. When a thin film is formed on a substrate using one of the above processes, the thin film is usually formed on the entire surface of the substrate. However, in reality, it is only necessary to form a thin film on one side of the substrate, especially the circuit formation area of the substrate. When the substrate is transferred, the film applied to the entire surface of the substrate or the film applied to the area where the substrate does not need the film may be transferred to another substrate by the hand of the transfer robot arm, or may peel and spread everywhere, resulting in the so-called Cross-contamination, and the peeling film fragments will pollute the processing environment of other processes. Therefore, in a semiconductor process, an unnecessary thin film portion must be removed from the substrate after the thin film is formed. An etching process for selectively removing unwanted thin films from a substrate by supplying an etchant to the substrate is a method widely used to remove such unwanted thin film portions. In particular, the etching process is supplied by As the #etching solution of the processing liquid to the substrate held by a fixture such as a chuck to remove unwanted films, the etching process is performed by a substrate processing apparatus, which usually includes a chuck or the like Tools to hold the substrate

314112.ptd Page 8 564474 V. Description of the invention (2) Plate holder and a processing liquid supply unit for supplying a processing liquid to a substrate held by the substrate holder. In the case where the above-mentioned substrate processing apparatus is used to complete the etching process, the following problems will occur: Month / Since the substrate holder is held by a substrate such as a chuck to hold the substrate, the substrate 'area where the substrate contacts the fixture is not Etchant is supplied, so the film remains on these areas of the substrate. Therefore, the other area of the substrate must be gripped again with this clamp and etched again. This will increase the processing time required to remove the film from the substrate and the amount of etching solution applied to the substrate. When the clamp is not used, a vacuum chuck-type holder may be used to hold the substrate under vacuum by using an empty pad or the like. However, a disadvantage of the straight-space type holder is that the back surface of the substrate to be processed is held under vacuum and held, so the back surface of the substrate cannot be etched. In addition, there is a device called a Bernoulli chuck type retainer, which does not directly hold the substrate. However, when using Bernoulli chuck type holders, it is difficult to form the surface of the circuit formation area on the substrate. 2 _ 1 line 'between the area where the film is not to be removed and the area where the film is to be removed. The boundary line on the outer periphery of the substrate. According to another substrate processing apparatus, the back surface of the substrate is etched by rinsing the back surface with a chemical liquid. In this type of substrate processing device, the chemical liquid is dispersed on the entire back surface of the substrate, and the substrate must be rotated at a certain high speed Z. Because of & the applied chemical liquid will be scattered everywhere and attached = on the substrate Areas that do not require chemical fluids contaminate the substrate. Furthermore,

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564474 V. Description of the invention (3) When recovering and reusing the chemical liquid, because the dispersed chemical liquid is easy for the device to complete the wall surface of other processes, the amount of liquid recovered will be reduced. [Chemical Summary] Therefore, an object of the present invention is to provide a substrate processing apparatus capable of processing all areas where a substrate must be processed in a short time, and avoiding application of a liquid to areas where the substrate is not required to be processed. In order to achieve the above object, the present invention provides a substrate processing apparatus including a substrate holder for holding and rotating a substrate surface processing unit that supplies a processing liquid to a lower surface of a substrate held by the substrate holder. To process the lower surface of the substrate; an outer peripheral edge processing element that supplies a processing liquid to the outer edge of the substrate held by the substrate holder to process the outer peripheral edge of the substrate; and a gas supply unit that applies a gas to the substrate The upper surface of the substrate held by the holder. According to the present invention ', the substrate processing apparatus can process not only the basic lower surface, but also the outer periphery of the substrate, and therefore, the substrate processing can surely process the area where the substrate needs to be processed. In addition, = should be applied to the upper surface of the substrate to avoid the treatment liquid and the vaporized treatment on the upper surface of the substrate. Therefore, the surface of the treatment-free plate can be protected from the treatment liquid. The substrate processing apparatus further includes a spinning solution supply unit for processing liquid to the lower surface processing unit to contact the outer peripheral surface of the substrate in a preferred aspect of the present invention for supplying the peripheral processing unit. ’The substrate holder includes a plurality of rotating rotors and is used to rotate at least, which avoids the base; a single cycle of holding is provided for the body of the body to apply the above table should be used one at a time

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Page 10 564474 V. Description of the invention (4) Actuator for rotating rotor. Since the substrate is held by the rotating rotor and rotates around its main axis, the substrate is moved at any time by the area held by the rotating rotor. Therefore, the processing liquid can be supplied to the substrate through the substrate holder. The held area is not hindered by the substrate holder. Therefore, there is no need to hold and process the substrate again, so that the time required to process the substrate can be shortened. In a preferred aspect of the present invention, the lower surface processing unit includes a first surface member and a processing liquid channel, the first surface member has a plane facing a lower surface of the substrate held by the substrate holder, and the processing A liquid channel is formed in the first surface member so as to open the plane of the first surface member so that the processing liquid passes through the processing liquid channel and is supplied to the plane of the first surface member. When the processing liquid is under surface tension, While in contact with the lower surface of the substrate, the processing liquid supplied to the plane is spread over the entire lower surface of the substrate. Therefore, it is not necessary to rotate the substrate at a high rotation speed in order to disperse the processing liquid on the entire lower surface of the substrate, thereby preventing the processing liquid from being scattered throughout the rotating substrate, and a high proportion of the processing liquid can be recovered. In a preferred aspect of the present invention, the outer peripheral processing unit can be moved toward the substrate held by the substrate holder, and can also be removed from the substrate held by the substrate holder, especially the outer peripheral processing. It is preferred that the unit includes a rotatable processing rotor having a groove, and the groove is formed on the outer peripheral surface of the rotatable processing rotor to surround the outer peripheral surface of the substrate held by the substrate holder. When the outer peripheral processing unit is moved near or in contact with the substrate, the processing liquid supplied to the first surface member of the lower surface processing unit passes through

564474 V. Description of the invention (5) The first surface member and the substrate are transferred to the outer peripheral processing unit, and then supplied to the entire periphery of the outer peripheral edge of the substrate through a groove in the processing rotor, thereby processing the Outer periphery of substrate. In other words, the processing liquid flowing to the processing rotor is retained by the grooves in the processing rotor, and then the substrate is rotated to supply the processing liquid to the outer periphery of the substrate, so the substrate is processed. Outside the perimeter. In this method, since the lower surface and the outer periphery of the board can be simultaneously processed with the processing liquid supplied to the lower surface processing unit, the amount of the processing liquid can be reduced, and the time required for processing the substrate can be shortened. . The position of the processing rotor can be adjusted relative to the U.S. board, so as to accurately establish the processing area and the non-processing area of the substrate on the outer periphery of the substrate. In a preferred aspect of the present invention, the gas supply unit includes a first surface member and a gas supply device, and the second surface member is provided to be inserted in a direction toward the substrate held by the substrate holder. The surface is used to supply gas to a space formed between the lower surface of the second surface member held by the substrate holder and the substrate. '' Substrate and

When a processing solution is attempted to enter the upper surface of the substrate from the lower surface processing unit and the outer peripheral edge, the gas supplied from the gas supply store will push the processing solution back, so avoidable =: The Z unit is applied to the upper surface of the substrate which does not need to be processed. If the gas is supplied, the space formed on the upper surface of the substrate and below the second surface member may be filled with nitrogen gas, and the nitrogen gas may be used as a purge gas between the two surfaces. The liquid is applied to the upper surface of the substrate. _ To avoid Ά

564474 V. Description of the invention (6) Make the above and other objects, features, and advantages of the present invention more obvious and understandable. [Embodiment] A substrate processing apparatus according to an embodiment of the present invention will be described below with reference to the drawings. As shown in FIG. 1, the substrate processing apparatus of the present invention has a substrate holder for holding a substrate W 1. A lower surface treatment for processing a lower surface of the substrate w by supplying a processing liquid to a lower surface of the substrate W A unit 2 and a pair of outer peripheral processing units 3 for processing the outer peripheral edge of the substrate W by supplying a processing liquid to the outer peripheral edge of the substrate W. The substrate processing apparatus further includes a processing liquid supply unit 4, a gas supply unit 5, and a processing liquid recovery unit 6. The processing liquid supply unit 4 is used to supply a processing liquid to the lower surface processing unit 2 and the outer peripheral processing unit 3. The gas supply unit 5 is used to supply gas i on the upper surface of the substrate W, and the processing liquid recovery unit 6 is used to recover the processing liquid that has been used to process the substrate W, and supply the recovered processing liquid to the processing liquid supply Unit 4. As shown in FIG. 2, the substrate holder 1 has four rotating rotors 11 for holding and rotating the substrate W in a horizontal plane, and the rotating rotors 11 can be wound around them by respective motors (not shown). When the main shaft rotates, the rotary rotors 11 can be moved so as to make contact or non-contact with the substrate w in a direction indicated by an arrow. When the substrate W is mounted in the substrate processing apparatus, the four rotary rotors 11 are moved toward the substrate w and are in contact with the outer peripheral surface of the substrate w. Hold the substrate W in a proper position while rotating ^ 11, and when the rotating rotors n are rotated around the main U by the relative U ''

314112.ptd Page 13 564474 V. Description of the invention (7) The substrate W held by 11 also rotates around its main axis. In this case, the rotating rotors 11 may be rotated by individual motors connected to the rotating rotors 11 or at least one motor connected to one of the rotating rotors 11 and the rotational speed of the rotating rotors 11 is set to The preset value is such that the substrate w rotates at a rotation speed in a range of 5 to 100 revolutions per minute. In the embodiment illustrated in the drawings, the substrate holder is used to hold the substrate boundary in such a manner that the substrate W must be faced downward by the surface treated by the treatment liquid, and the substrate W need not be faced by the treatment liquid and the treated surface. Up, meaning that the surface on which the circuit formation area is facing up. As shown in FIG. 1, the lower surface processing unit 2 includes a first surface member 14 having a plane 14a, and the plane 14a faces through the The lower surface of the substrate held by the substrate holder; the lower surface processing unit 2 also has a processing liquid channel 15, and one end of the processing liquid channel 5 is approximately centered in the plane 14a of the first surface member 4 While the other end is connected to the processing liquid supply unit 4 ° in this configuration, the processing liquid supplied from the processing liquid supply unit 4 is supplied to the first surface member 1 4 through the vertical processing liquid channel 15 The upper surface, that is, the plane and the first surface member 14 are vertically movable by an actuator (not shown), and can be moved close to the lower surface of the substrate * held by the substrate holder 丨Position_, and the first in this position The surface member 14 and the lower surface of the substrate W are separated by 0.5 mm (with a distance of 4 mm. Therefore, when the first surface member 14 is raised, the plane 14a of the first surface member 14 ( The upper surface) and the lower surface of the substrate create a small gap, and the processing liquid supplied from the processing liquid through 15 to the plane i 4a of the first surface member 14 will fill the

314112.ptd Page 14 564474 V. Description of the invention (8) Small gap, and therefore supplied to the lower surface of the substrate. The pumping of the lower surface processing unit 2 also has a pure water supply channel 2 that is parallel to the processing liquid channel 15 and the pure water supply channel 21 = the plane of the two-face member 14 "nano centering open, and its other- The end is far away, and the water supply source (not shown). With this configuration, from this pure water supply source: 2: ί t is supplied to the direction # 1 8e from the arrow A in FIG. 1 The first pure water spraying device 22 β is sprayed with pure water to the upper surface of the substrate W held by the slab-retaining state 1 and the soil 22 is set on the inner wall surface of the wall 50 ^ Φ Brother pure water shot container tube 18C interconnected in the processing liquid container 16: the processing liquid 俜 filter 19, stored in the processing to the filter 19, and transmitted by Y7 through the tube 18c and then the processing liquid Remove the impurities in the 液! Solution, the force of the processing solution channel 15 is two f ;;: pass; the processing solution is supplied to the processing solution channel by the heating device 2 = = plus the tube "8 d : Later, control the room 3 through the direction of the younger one. 55: The pipe fittings of the processing channel 1 5 i 8 = 22 = 加热 = heating device 20 and the 37, can be processed Supply to ^ 18 ^ change ;: Λ direction control room, the tube 18b is connected to the processing liquid volume management channel 15, and the path allows the processing liquid to pass through the 哕 m port. This constitutes a heating cycle, a processing liquid container M, and a heating chamber. Set 2〇 and off

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564474 ___________ ^^ V. Description of the invention (9) The filter 19 is circulated. The valve i 7, pipe 1 8 b, pipe 1 8 c, pipe 18, and the first directional control valve 37 are used as a circulation device to The processing liquid is circulated between # Monument 理 液 罐 16 and the heating device 20. As shown in FIG. 3A, each outer peripheral processing unit 3 has a processing rotor 2 5 and a base 2 7 'rotatingly supporting the processing rotor 2 5 at its upper end. The annular groove 26 on the outer peripheral surface has a rectangular cross section so as to surround the outer periphery of the substrate W. The depth of the groove 26 is about 10 mm, which is positioned as when the When the processing rotor 25 moves against the substrate W held by the substrate holder 1, the outer periphery of the substrate W enters the groove 26. The processing rotor 25 may be made of any of various materials including synthetic resin, non-woven fabric, porous synthetic resin, and the like, and as indicated by C in FIG. ^, The outer periphery of the substrate w is formed with the substrate W. The upper and lower surfaces and the outer periphery are formed near the outer periphery of the substrate w, and the outer peripheral surface of the substrate W is radially outward, and the region D of the substrate W is not required to be treated by the treatment liquid. region. A reversible pulse control motor 28 is installed in the base 27 and installed at the bottom of the base. One end of the male screw member 29 is connected to the driving shaft of the pulse control motor 28, and the male screw member The 29 series penetrates into a female screw member (not shown) fixed to the inner wall surface of the substrate processing apparatus. With this configuration, when the pulse control motor 28 is supplied with energy, the pulse control motor 28 is covered by the male screw mechanism 29 because it is a female screw fixed to the inner wall surface of the substrate processing apparatus. The setting of the outer edge processing order ^ y 'will change. Therefore, when the pulse control motor 28 is supplied with energy, the strict rotor 25 can move horizontally toward or away from the substrate W because:

564474 V. Description of the Invention (ίο) The processing rotor 25 is adjusted relative to the position of the substrate W to accurately establish a boundary line of a region to be processed of the substrate. As shown in FIG. 3A, the boundary line on the outer peripheral edge of the substrate W processed by the outer peripheral edge processing unit 3 can be rounded off at this degree, and this depth ^ allows the substrate to tear into the recess. Slots 2 6. As shown in Fig. 1, a second pure water spraying device 2 3 for spraying pure water to the outer peripheral processing unit 3 is mounted on the inner wall surface of the substrate processing device. The gas supply unit 5 has a second surface member 3 丨 which is circular and is placed on the upper surface of the substrate W held by the substrate holder 丨 approximately horizontally and facing the substrate. On the upper surface of ψ, the diameter of the second surface member 31 is slightly smaller than the diameter of the substrate W, as shown in FIG. 2. The gas supply unit 5 has a gas passage 32. One end of the gas passage 32 is opened near the lower surface of the outer periphery of the second surface member 31, and the other end is connected to a gas supply source (not shown). ). The gas passage 32 and the gas supply source are used as gas supply equipment to supply gas to the upper surface of the substrate W held by the substrate holder 丨 and the second surface member 31. In the space between the surfaces. In particular, a specific gas system supplied from the gas supply source is supplied to the gas passage 32 in a direction indicated by an arrow β, passes through the gas passage 32, and is then supplied from a position near the outer periphery of the second surface member 31. ^ 至此 Substrate W. The second surface member 31 can be moved directly by an actuator (not shown), and can be moved to a position close to the upper surface held by the substrate holder 1, and the second at this position The surface member holds a two-plate base: The upper surfaces of W are separated by a distance of 0.5 mm to 5 mm.

564474 V. Description of the invention (11) The treatment liquid recovery unit 6 has a plurality of inclined recovery plates 3 5 and a gas-liquid separator 36. The inclined recovery plates 3 5 are disposed below the first surface member 14. The gas-liquid separator 36 is configured to separate the processing liquid recovered by the inclined recovery plate 35 from the gas, the inclined recovery plate 35 and the processing liquid falling from the first surface member 14. The gas-liquid separator 36 is connected to each other through a pipe member 18a, and the gas-liquid separator 36 is connected to the processing liquid container 16 through a second directional control valve 38 and the pipe member 18b. With this configuration, the processing liquid that has processed the substrate W is recovered by the recovery plate 35 and is thereby transferred to the gas-liquid separator 36, and the processing liquid is separated from the gas by the gas-liquid separator 36. The processing liquid is transferred to the processing liquid container 16 and the gas separated by the gas-liquid separator 36 is discharged from the gas discharge port 39. δHydi directional control valve 38 has a drain port 40, and the liquid discharged from the gas-liquid separator 36 can be discharged from the drain port 40 by switching the second directional control valve 38, and Non-transferred to the processing liquid container 16. Especially when the substrate w is cleaned with the pure water supplied by the pure water supply channel 21, the first directional control valve 38 operates to discharge pure water from the drainage cock 40, and does not discharge pure water. Water is transferred to the treatment liquid container 6. If the temperature of the processing liquid recovered by the processing liquid recovery unit 6 is low, the first directional control valve 37 can be operated to pass through the heating device 20 to circulate the recovered processing liquid in the heating circulation path, thereby The treatment liquid is heated to a desired temperature. The operation of the substrate processing apparatus thus constructed will be described below. When a substrate to be processed is loaded in the substrate processing apparatus by a transfer robot arm or the like, the four rotating rotors of the substrate holder 丨 system are

564474 V. Description of the invention (12) The substrate W is moved toward the substrate W and is in contact with the outer peripheral surface of the substrate W, so that the substrate W can be held in position. When the substrate is returned to the rotating rotors, keep the sun guard, the first surface member of the processing liquid supply unit 4 is raised, and then stopped on the lower surface of the substrate W and the plane of the first surface member 14. 14a is located at a distance of 0.5 mm to 4 mm, while raising the first surface member 14, lower the second surface member 31 of the gas supply unit 5, and then stop at the substrate w The upper surface and the lower surface of the second surface member 31 are located at a distance of 0.5 mm to 5 mm, and then a nitrogen gas is passed from the gas to the upper surface of the substrate W. ... then, the individual motor rotates in the range of 5 to 嶋 每 per minute, =, the substrate W is rotated, and when the substrate w rotates, the processing liquid is transferred from m by the valve i 7 and the liquid container 16 to the heating The device 20 is then treated by: = heated to a specific temperature. After that, 5: the heated processing liquid is supplied to the plane "two domains" of the first surface member 14 through the process, and the liquid "a" supplied to the plane "a" of the first surface member 14 starts to fill up in the first Between the surface member 14 and the substrate w: First, it is supplied to the lower surface of the substrate W: At the same time as the lower surface of the substrate W, the old m-shaped t should be moved toward the substrate W by the motor 2 8: When punching the recess '26 and reaching a specific position in the groove 26 ?: Processing: The sub-stop 25. The position of the processing rotor 25 can be equal to the area to be processed on the outer periphery of the substrate W Under the centrifugal force of the rotating substrate, the processing liquid of f provided in the d 5 domain is carved. The knife is passed through the substrate W and the first surface.

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564474 V. Description of the invention (14) Remove the treatment liquid attached to the processing rotor 25 at this time. At this time, the second directional control valve 38 is operated to connect the gas-liquid separator 36 to the drainage port 40. Therefore, the pure water from which the substrate W and the processing rotor 25 have been cleaned can be recovered by the inclined recovery plate 35, and passed through the gas-liquid separator 36, and then discharged from the drainage 40. After that, the substrate W is stopped from being rotated, and then the substrate_the substrate processing apparatus is unloaded by a transfer robot arm, and then the processing steps of the substrate processing apparatus are completed. Since the substrate processing apparatus according to the present invention can simultaneously process the lower surface and the outer periphery of the substrate W, the substrate processing apparatus according to the present invention can process the substrate W in a short time. Since the processing liquid can be supplied to an area where the rotary rotor 11 and the substrate W are in contact with each other, there is no need to hold the substrate W again and process the substrate W again, thereby shortening the processing time. Since nitrogen is supplied to protect the upper surface of the substrate W, the upper surface of the substrate W which does not need to be processed can be prevented from being processed. Furthermore, 'the substrate w is rotated at a relatively low speed in the range of 5 to 100 revolutions per minute, so the processing liquid supplied to the substrate W does not spread everywhere' and a relatively high proportion of processing can be recovered liquid. A substrate processing system incorporating the substrate processing apparatus according to the present invention will be described below. In the substrate processing system, 'the substrate processing apparatus processes a semiconductor wafer (hereinafter referred to as a' wafer ') on which a thin film is formed, and the substrate processing apparatus uses an etching solution to etch the wafer. However, The present invention is not limited to such a substrate processing apparatus. Figure 4 shows a plan view of a substrate processing system incorporating the substrate processing apparatus according to the present invention. As shown in Figure 4, the substrate processing system has

314112.ptd Page 21 564474 V. Description of the invention (15) ~ Two wafer cassettes 5 丨 flags 5 丨 b for storing a plurality of wafers W, and a substrate processing apparatus 5 for wafers 5 2 A substrate cleaning device 53 for cleaning the etched wafer w and a substrate drying device 54 for drying the cleaned wafer ψ, the substrate processing system also has a mechanism for transferring the wafer W between the above devices The first transfer robot arm 55a, the second transfer robot arm 55b, and the third transfer robot arm 55a are used to temporarily place a wafer w (or multiple wafers W) to transport the wafer W to the transfer robot arms 5 5 a and 5 5 b between the buffer handling table 5 6. Each of the wafer cassettes 5 1 a and 5 1 b has a plurality of storage racks (not shown) to store respective wafers W, and the wafers W are transferred from any one of the wafers by the first transfer robot arm 5 5 a. The wafer cassettes 5 1 a and 5 1 b are removed, and then transferred to the second transfer robot arm 55 b via the buffer transfer table 56, and the wafer W transferred to the second transfer robot arm 5 5 b is guided in In the substrate processing apparatus 52, the wafer W is etched therein, and the structure and operation of the substrate processing apparatus 52 are the same as the substrate processing apparatus described above with reference to FIGS. 1 to 3A and 3B. If the copper thin film attached or deposited on the wafer W is to be etched, the etching solution used in the substrate processing apparatus 52 may be, for example, a compound solution including an acid solution and an oxidant solution, and the acid solution and the acid solution may be supplied simultaneously or alternately. The oxidant solution is used to etch the copper thin film. The acid solution may be, for example, hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, oxalic acid, or similar non-oxidizing acid (η ο η-ο X idizingacid), and the oxidant solution may be ozone water, hydrogen peroxide water, wall acid Water, saline or similar oxidant solution. After the wafer W is etched in the substrate processing apparatus 52, the wafer W is guided to the substrate cleaning apparatus 53 by the second transfer robot arm 55b. The substrate cleaning apparatus 53 has a cleaning liquid supplied thereto. Sponge roll

314112.ptd Page 22 564474 V. Description of the invention (16) (pictured) 'and while holding and rotating the wafer W, contact the wafer W with the sponge roller to clean it, by the substrate cleaning device 5 3 removes the product produced during the etching process from the wafer W, and then carries the cleaned wafer w from the substrate cleaning device 5 3 to the substrate drying device 5 4 by the second transfer robot arm 5 5b, The substrate drying device 54 has a spin dryer (not shown) that rotates the wafer W at a high speed to dry the wafer W. The spin dryer can dry and attach the wafer W for cleaning. Liquid, the wafer W is transferred by the first transfer robot arm 5 5 a and placed in one of the wafer cassettes 5 1 a, 5 1 b, and then the processing steps of the substrate processing system are completed. The substrate processing apparatus according to the present invention can thus be combined with the substrate processing system, and the substrate processing system can complete different processes including an etching process, a cleaning process, and a drying process. According to the present invention, because the substrate processing apparatus can simultaneously process the lower surface and the outer periphery of the substrate W, the substrate processing apparatus can process the substrate W in a short time; since the gas is supplied to protect the upper surface of the substrate W, it can be avoided The processing liquid and the vaporized processing liquid are applied to the upper surface of the substrate without processing. Because the substrate is held by the rotating rotor, the areas where the rotating rotor and the substrate are in contact with each other are moving at any time. Therefore, the processing liquid can be supplied to those contact areas, so there is no need to hold and process the substrate again. , So that the processing time can be shortened. Furthermore, because the substrate is rotated at a relatively low speed, the processing liquid supplied to the substrate does not spread everywhere, and a relatively high percentage of the processing liquid can be recovered. Although certain preferred embodiments of the present invention have been shown and described in detail,

314112.pid Page 23 564474 V. Description of the invention (17) It should be understood that the present invention may be altered and modified without departing from the scope of the appended patents. [Industrial Applicability] The present invention is applicable to a substrate processing apparatus for supplying a specific processing liquid to a substrate such as a semiconductor wafer, a glass substrate, or a liquid crystal panel for an etching process or other processes.

314112.ptd Page 24 564474 Brief description of the drawings [Simplified description of the drawings] FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, and some of them are shown in a block form; FIG. 2 is based on A plan view of a substrate processing apparatus according to an embodiment of the present invention; FIG. 3A is an enlarged front view of a processing unit according to an embodiment of the present invention, the processing unit is used to process the outer periphery in the substrate processing apparatus; FIG. 4 is an enlarged cross-sectional view of an outer periphery of a substrate processed by the substrate processing apparatus according to an embodiment of the present invention; and FIG. 4 is a plan view of a substrate processing system incorporating the substrate processing apparatus according to an embodiment of the present invention. 1 Substrate holder 2 Lower surface processing unit 3 Outer peripheral processing X3tt — early 4 processing liquid supply unit 5 gas supply unit 6 processing liquid recovery unit 11 rotating rotor 14 first surface member 14a plane 15 processing liquid channel 16 processing liquid container 17 Valves 18a, 18b, 18c, • 18d, 18e Fittings 19 Filter 20 Heating device 21 Pure water supply channel 22 First pure water spraying device 23 Second pure water spraying device 25 Processing rotor 26 Groove 27 Base 28 Pulse control motor 29 male screw elements

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Brief description of drawings 31 Second surface member 32 Gas passage 35 Inclined recovery plate 36 Gas-liquid separator 37 First directional control valve 38 Second directional control valve 39 Gas exhaust port 40 Drain port 50 Rectangular wall 51a Λ J 51b Wafer Cassette 52 Substrate processing device 53 Substrate cleaning device 54 Substrate drying device 5 5a First transfer robot arm 55b Second transfer robot arm 56 Buffer transfer table A, B, E Arrow D area d Distance W substrate / wafer 314112.ptd 26th page

Claims (1)

564474 VI. Patent application scope 1 · A substrate processing device substrate holder, a lower surface processing substrate surface held by a single holder; an outer peripheral edge processing substrate edge held by a single holder; and an upper surface of a substrate held by a gas supply unit 2 · If the scope of the patent application, the processing device includes a lower surface processing unit to 3 · If the scope of the patent application, the substrate holder includes a rotating rotor and is used for 4 · If the scope of the patent application, the surface treatment unit includes a surface member having a surface For the flat surface, and the process is opened to the first surface member 5 · If the patent application covers the first surface member and the substrate from 0.5 mm to 4 mm, including: used to hold and rotate the substrate; Supplying the processing liquid to the lower surface of the substrate to process the lower surface elements of the substrate, supplying the processing liquid to the outer periphery of the substrate to process the outer periphery of the substrate, and supplying the gas to the substrate. The substrate processing apparatus guaranteed by item 01, wherein the substrate physical liquid supply unit is configured to supply a processing liquid to the outer peripheral processing unit and the outer peripheral processing unit.The substrate processing apparatus according to 1 or 2, wherein a plurality of actuators for rotating at least one rotary rotor for contacting an outer peripheral surface of the substrate. The substrate processing apparatus according to item 1, wherein the lower surface member and the processing liquid passage, the upper surface liquid path of the substrate held by the first 3 plate holder is formed in the first surface member, and the flat surface. The substrate processing apparatus of 4 items, wherein the distance held by the holder is 1 α ° h. And the distance between the substrates 564474 VI. Scope of patent application 6. If the substrate processing edge processing unit of the scope of patent application item 1 is toward the substrate holder, the outer periphery can move, and it can be maintained from the substrate holder. Substrate removal • Remove the substrate processed as described in the patent application for item i. The edge processing unit may include a groove having a groove I ′, wherein the peripheral groove is formed on the rotatable processing rotor =: processing rotor, and the outer two f surfaces of the substrate held by the substrate holder are surrounded by Borrow 8. The substrate processing as described in item 2 of the patent application °°. The liquid supply unit includes a storage unit for storing the inside of the processing unit, wherein the processor is used to heat the processing liquid container; the processing liquid volume device; and the heating for circulating the processing liquid volume and the processing liquid. Circulating device for the treatment liquid.时 14。 The heating device 9. If the patent application range 2m supply unit includes a second surface structure 'wherein the gas is the second surface member so as to face the current surface :: the device, the upper surface of the installation plate' The substrate held by the gas supply container * The substrate held by the substrate holder should be gas to the space formed between the surfaces. The base member of Table 9 below the range of the side member of the M element is circular and its diameter is set to 'where' the second n. If the scope of the patent application is ninth or in: The second surface component fish substrate processing device is widely used, wherein the substrates are separated from each other in a range of 0.5 mm to = the substrates being held are in phase with each other. If the substrate processing device of item 2 of the patent application scope includes: 564474 314112.ptd Page 29