TW563177B - Method for transforming a pattern - Google Patents
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- TW563177B TW563177B TW90127947A TW90127947A TW563177B TW 563177 B TW563177 B TW 563177B TW 90127947 A TW90127947 A TW 90127947A TW 90127947 A TW90127947 A TW 90127947A TW 563177 B TW563177 B TW 563177B
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冰 3177 五、發明說明α) 5〜1發明領域: 本&明係為一種轉移圖形的方法,特別是有關於一種 利用兩階段的方式將_形由来里鐘# 乃式將園升y田尤卓轉移至光阻層的方法。本 二明矛用兩&段曝光之方式將圖形成功地由光罩轉移至晶 圓表面的光阻層上,以減小圖形轉移過程中所產生之誤差 ,並增加製程運作之效率。 5〜2發明背景: 當積體電路(integrated circuit; 1C)之密度不斷地 ,大日π ’為使晶方(ch i p)面積保持一樣,甚至縮小,以持 π =低電路之單位成本,唯一的方法,就是不斷地縮小電 路設計規格(design rule)。當縮小規格時,所遭遇的最 大瓶頌,即是黃光微影技術。除非黃光微影成像能逐漸縮 J化,否則積體電路技術之發展必遭受到停頓之命運。 脸&積體電路製私中的微影成像術(phot〇l ithography )是 j,數眾多的電子零件和線路,一層一層地轉換到一個微 二:曰:方上’ # 一層均有一片光罩,靠著光學成像原理, ίίΐίί罩、/鏡,在晶片表面上,晶片表面必須 ^目“般之物質存在’屬於可感光之膠質化合物( 星夕m Υ經與光線作用和化學作用方式處理後,即可將光 回形一五-十的轉移到晶片±,因此在微影成像製程Bing 3177 V. Description of the invention α) 5 ~ 1 Field of the invention: The present & Ming system is a method of transferring graphics, especially about a two-stage method that uses the _ 形 由来 里 钟 # You Zhuo transferred to the photoresist layer method. This two-pronged spear successfully transferred the pattern from the photomask to the photoresist layer on the surface of the wafer by two-amp exposure to reduce the error generated during the pattern transfer and increase the efficiency of the process operation. 5 ~ 2 Background of the Invention: When the density of the integrated circuit (1C) is constantly increasing, the large day π 'is to keep the ch ip area the same, or even shrink, so as to maintain π = low circuit unit cost, The only way is to continually reduce the design rule of the circuit. When downsizing, the biggest bottleneck encountered is the yellow light lithography technology. Unless the yellow light lithography imaging can be gradually reduced, the development of integrated circuit technology will suffer the fate of pause. Face & integrated circuit lithography (phot〇l ithography) is j, a large number of electronic parts and circuits, converted layer by layer to a micro 2: said: "Fang Shang '# one layer on each layer Photomask, relying on the principle of optical imaging, on the surface of the wafer, the surface of the wafer must be “like a substance exists”, which belongs to a photosensitive colloidal compound. After processing, the light can be transferred to the wafer ± 15 to 10 times, so in the lithography imaging process
563177 五、發明說明(2) 卜 ,罩 \ . 耸,’皆為:供阻、光阻塗佈顯影設備及對準曝光光學系統 ί要條件。隨著積體電路工業之進步,晶方内 得不停的尋找新=斷以倍數成長,造成線寬不斷縮小,使 n ¥成像&ί料,突破光學瓶頸的技術開發等,成為 U〜成像所需時時面臨之挑戰。 義露在一 π = ί微影成像之光阻材料是對光敏感物質,若 ΐ:有1線下’將使之產生變化,而無法做好定像之 像製程亦需;Μ;;;二須在暗房内進行,微影成 所以通猶A龙1在特殊% 3兄下,一般皆在黃光下進行, ”、、界光室。由於積體電路線路複雜,寬度皆達到 微米("m ; 1 0 一w^ 作見沒白違到 而m旦)m )下,所以必須在無塵潔淨室中製造, 而在φά ,Υν/成像過程中對. 何灰塵微粒,接;:因要求更加嚴格1為任 。 要了此因成像而造成元件缺陷,使電路模糊 嚴苛Γ:ΐ微ΐ積體電路製程技術,對線寬控制有著極為 ,可的而求右以更微觀的角度’或是更嚴密之定 =:2求應推廣至對晶片内任一圖形及圖形之任一角 應圖妒之「ί ^ ’亦即考慮到晶片圖形對於光罩之相對 ί ^由光⑼透d」(Fidei 1 ty)由於光罩圖形是以光為介 :猎由光學透鏡轉送至晶片±,光在進入光之「二 像分佈」(aerial image)通當Ρτ/丨 日 ^ ^ , + 5 mage)通书已不似光罩上之圖形那般「 凡吴」。此項缺陷一般稱為光學近似效應(optlcal 563177 五、發明說明(3) proximi ty ef f ect; ope)。圖形與圖枣間因光線繞射而互 相影響’除了讓圖形失真外,亦同時讓製程空間(process window )變小,如果圖形失真已是無可避免,為求晶片上 之圖形合乎設計者需求,則可考慮先將光罩圖形依某種規 則進行圖形修正以額外的圖形來補償或削減上述圖形失真 之處’此項技術稱之為光學近似效應修正技術(〇 P t i C a 1 proximity correction; OPC) 0563177 V. Description of the invention (2) Bu, hood \. Tower, ‘all are: supply resistance, photoresist coating and developing equipment, and alignment exposure optical system. With the advancement of the integrated circuit industry, the crystal has to constantly search for new = breaks to grow by multiples, causing the line width to continue to shrink, making n ¥ imaging & materials, breaking through optical bottleneck technology development, etc., become U ~ The challenges you always face in imaging. Yi Lu Yi π = lithography imaging photoresist is a light-sensitive substance. If ΐ: there is 1 offline 'will change it, and the image processing process that cannot fix the image is also required; M ;;; The second must be performed in a dark room, so the photolithography is usually performed under the yellow light under the special% 3 brother, "", and the boundary light room. Because the integrated circuit wiring is complicated, the width is up to micron ( "m; 1 0 a w ^ work sees no violation and m denier) m), so it must be manufactured in a clean room, and in the process of φά, Υν / imaging process, what dust particles, then; : Because the requirements are more stringent, 1 is required. This is because of the component defects caused by imaging, which makes the circuit fuzzy and severe. Γ: ΐMicro-integrated circuit process technology, which has extreme control over line width. The angle of the angle 'or a more rigorous determination =: 2 The promotion should be extended to any figure in the chip and any corner of the figure should be jealous of "ί ^", that is, the relative of the wafer pattern to the photomask. ^ Youguang "Fidei 1 ty" because the mask pattern is based on light: hunting is transferred from the optical lens to the chip ±, the light is entering the light "Like two distribution" (aerial image) through when Ρτ / Shu day ^ ^, + 5 mage) through the book is no longer like pattern on the mask like that "Wu Fan." This defect is generally called the optical approximation effect (optlcal 563177 V. Description of the invention (3) proximi ty ef f ect; ope). The effect of light diffraction between graphics and dates is not only to make the graphics distorted, but also to reduce the process window. If the graphics distortion is unavoidable, the graphics on the chip are in line with the designer ’s needs. , You can consider first correcting the mask pattern according to some rules to correct or reduce the distortion of the above-mentioned graphics with additional graphics. This technology is called optical approximation correction technology (〇P ti C a 1 proximity correction ; OPC) 0
參照第一圖所示,此為光學近似效應之示意圖。雖然 微影技術已進入深次微米領域,但面對類似一微米見方方 塊圖形1 0之處理時’難免在最終光阻圖形之角落出現圓角 (round corner)的現象,而使得此微米見方方塊圖形1〇在 進行傳統之曝光及顯影的製程後,容易因為光學近似效應 而失真變成一圓形1 5。此微米見方方塊圖形丨〇其尺寸大約 小於或等於1微米見方。這乃是由於X方向邊緣及γ方向邊 緣之繞射光線於此交會之結果,隨著尺寸漸趨微小,角落 與邊緣之曝光比例亦相對增加,圓角亦趨明顯。為解決此 一問題’最單純之解決方式即將角落遮光圖形往外「推出 」(參照第二圖所示),即將微米見方方塊遮光圖形的角 落向外延伸,藉以減少角落曝光過度的現象,或亦可單純 以圖形「補償」之觀念來想像之,亦即已知結果為圓角, 故預先放置額外之凸出圖形*2 〇 (通常為更微小之方塊)予 以補償,以使此微米見方方塊圖形丨〇在進行傳統之曝光及 顯影的製程後,依舊是形成一方形之圖形2 5。放置之補償Referring to the first figure, this is a schematic diagram of the optical approximation effect. Although the lithography technology has entered the field of deep sub-micron, when faced with a process similar to the one-micron square box pattern 10, it is inevitable that round corners will appear in the corners of the final photoresist pattern, which makes this micron square box After performing the traditional exposure and development process, the figure 10 is easily distorted into a circle 15 due to the optical approximation effect. The micron square pattern has a size of approximately less than or equal to 1 micron square. This is because the diffracted rays of the edges in the X direction and the edges in the γ direction intersect here. As the size becomes smaller, the exposure ratio of the corners and edges also increases relatively, and the rounded corners become more obvious. In order to solve this problem, the simplest solution is to “push out” the corner shading pattern (refer to the second figure), that is, to extend the corner of the micron square cube shading pattern outward to reduce the phenomenon of corner overexposure, or It can be imagined simply by the concept of "compensation" of the figure, that is, the known result is rounded corners, so an extra protruding figure * 2 (usually a smaller square) is placed in advance to compensate, so that this micron square box Figure 丨 〇 After the traditional exposure and development process, a square figure 2 5 is still formed. Compensation for placement
563177 五、發明說明(4) 圖形又稱為「飾玲 f . p X Jj., 飾、、文」(senf ),其大小及位置之決定則需 視I程之參數而決定。 當 一般之 圖形( 學特性 考量: 區域性 區域性 者之影 之製程 似效應 圖形, 須經過 光學近 ,因此 曰益縮 然在實際上積體電路光罩圖形並不全然如此單純。 光罩圖形包含重複性圖形(記憶體類產品)與任意 周邊電路或邏輯產品)等兩類圖形等兩類圖形之S 不同’、:但基本進行光學近似效應修正時,應有兩項 (j)兩鄰近不同圖形(各點)間之距離;(2)圖形之 搶度(local area density)。尤其是在考量圖形之 =度時,應該同時考量當對微影成像與電聚蝕刻兩 i或因Ϊ使用光學近似效應修正的方法,會使微影 3 =化而降低製程運作之效率。而使用光學近 二县抑Γ制必m光罩上增加針對角落所延伸出的 “呈之成本。使用光學近似效應修正法必 相^複雜之考量與步驟,雖然此改善方法已修正了 似效應,但是仍無法精確地顯示出 圖形轉換後之尺寸精度盔法符人在主二2 =之圈开/ 小下之+戈 4 m又…次付σ在+導體製程線寬 5 - 3發明目的及概述: 鑑於上述的發明背景中, 正法容易使製程複雜化並容易 程運作之成本。本發明提供了 利用傳統之光學近似效應修 降低製紅運作效率且提高製 一項方法’利用兩階段曝光 563177 五、發明說明(5) 之方f將圖形成功地由光罩轉移至晶圓表面的光阻層上, 其中=—階段之光源能量加上第二階段的光源能量必須大 於或f於光阻層的顯影臨界值,以提高圖形轉移時^ 寸之精準度。 y & 成功:的為利用兩階段曝光之方式將圖形 ί = ; =第二!段的光源能量必須大於或等於= ·、、、、tm界值,以簡化製程所需之步驟。 成功m的第三個目的為利用兩階段曝光之方式將圖形 I货&光罩轉移至晶圓表面的光阻層上,其中第一階 量加上第二階段的光源能量必須大於或等於= 層的顯衫臨界值,以加速製程運作之效率。先ρ 士:明之再-個目的為利用兩階段曝光之方式將 成功地由光罩轉移至晶,圖:?t/ 夕W匕旦A 51表面的光阻層上’其中第-階段 2、此里σ上第二階段的光源能 層的顯影臨界值,卩降低製程運作之生產成本 先阻 根據=上所述之目的,本發明提供了 兩階段曝光之方式將圖形由光 2 光阻層上。第一階埒盘m Μ… 付砂王日日圓表面的 以一第一光源能量及第一 ^ ^成圖形之區域上的光阻層, 里及弟先罩(Photo mask)進行第一階段 五、發明說明⑹ ———__ 的曝井 S^ 圖形。第=光阻層之材料性質。第-光罩上包含第 用1: 2為使用一含有第二圖形的第二光罩ί: 。句弟二光罩包含一不規則分 飞上的先阻層進行曝 取後進行顯影 ^ ;則分佈之第二圖形 則趣過 便用的光阻層Λ丨不止卩。β 層為C步驟的光阻層將會被移除,若使, 來,而i::需過兩次曝光,的光阻層將:以 製程。第-光源能量d::”行蝕刻製程或是摻雜 臨界值,I胃^ 2 /、先源能量均小於光阻層@ ^ P 认I 第一先源能量加上第-伞、區处曰 日的顯影 於光阻層的顯影臨界值。本私=一先源此1必須大於或等 寸之精準度並簡化製;所提f圖形轉移時圖形尺. 運作之效率,更可降二,本發明也可加速製程 牛低衣私運作之生產成本。 5 _ 4發明詳細說明·· w ί 月的些實施例會詳細描述如下。缺而 、、田描述外,本發明還 —而,除了詳 本發明的範圍不受限定^ '在/、他的貫施例施行,且 丨民疋,其以之後的專利範圍為準。563177 V. Description of the invention (4) The graphic is also called "senling f. P X Jj., Ornament, and text" (senf). The size and position of the figure must be determined according to the parameters of the I process. When the general graphics (study characteristics: the effect of the regional shadow of the process-like graphics, it must go through optical proximity, so in fact, in fact, the integrated circuit mask pattern is not entirely so simple. Mask pattern The two types of graphics, including repetitive graphics (memory products) and arbitrary peripheral circuits or logic products), are different in S 'and' 2 ', but when the optical approximation effect is basically corrected, there should be two (j) two adjacent The distance between different graphics (points); (2) the local area density of the graphics. Especially when considering the degree of the pattern, it should be considered at the same time when lithography imaging and electro-polyetching are used or the optical approximation correction method is used, which will reduce the lithography 3 and reduce the efficiency of the process operation. The use of optics in the near two counties will increase the cost of the "corner" for the corners. Using the optical approximation correction method will have complicated considerations and steps, although this improvement method has corrected the similar effect , But still can not accurately display the dimensional accuracy after the graphics conversion. Helmet Rune in the main 2 = circle open / small under the + 4 m and ... time to pay σ in + conductor process line width 5-3 Purpose of the invention And overview: In view of the above background of the invention, the orthodox method is easy to complicate the process and the cost of the process operation. The present invention provides the use of traditional optical approximation effects to reduce the efficiency of red-making operations and improve the method of making a 'use two-stage exposure 563177 V. Description of the invention (5) The pattern f successfully transfers the pattern from the photomask to the photoresist layer on the wafer surface, where the energy of the light source in the stage plus the energy of the light source in the second stage must be greater than or equal to the light The threshold value of the development of the resist layer, in order to improve the accuracy of the ^ inch when the pattern is transferred. Y & Success: To use two-stage exposure to change the pattern ί =; = Second! The light source energy of the segment must be greater than or equal to = · ,,, tm boundary values to simplify the steps required for the manufacturing process. The third purpose of successful m is to use a two-stage exposure method to transfer the pattern I & photomask to the photoresist layer on the wafer surface. , Where the first-order quantity plus the second-stage light source energy must be greater than or equal to the threshold value of the layer to accelerate the efficiency of the process operation. First ρ: The next step is to use the two-stage exposure method to Successfully transferred from the photomask to the crystal, picture:? T / evening W on the photoresist layer on the surface of A 51 'wherein the first stage-here, the development threshold of the light source energy layer in the second stage on σ, 卩According to the purpose described above, the present invention provides a two-stage exposure method to place the pattern on the photoresist layer of light 2. The first stage of the disk m Μ ... The photoresist layer on the first patterned area with a first light source energy and a photo mask is used to perform the first stage. 5. Description of the invention ⑹ ———__ 's exposure well S ^ pattern. The material property of the photoresist layer. The photomask containing the first 1: 2 is used The second mask of the second pattern: The second mask of the sentence pattern contains a first blocking layer on the irregular flying plane for exposure and development ^; then the distributed second pattern is a photoresist layer that is easy to use. Λ 丨 More than that. The photoresist layer whose β layer is the C step will be removed. If so, come, and i :: After two exposures, the photoresist layer will: be processed. The first light source energy d: : "Etching process or doping threshold, I stomach ^ 2 /, the source energy is less than the photoresist layer @ ^ P Development threshold of the resist layer. This private = a first source. This 1 must be greater than or equal to the accuracy and simplify the system; the mentioned f graphics transfer the graphic ruler. The efficiency of the operation can be reduced by two, and the invention can also speed up the operation of the manufacturing process. Cost of production. 5_4 Detailed Description of the Invention · Some embodiments of the month will be described in detail as follows. In addition to the description of the invention, the present invention also-but, in addition to the details of the invention, the scope of the invention is not limited ^ 'in the implementation of his implementation examples, and the public, which is subject to the scope of subsequent patents.
參照第三圖所示 LL A 導體元件包含多數條丄匕為一半導體元件之俯視圖。此半 線(bit line)11G /子⑽與多數條位元 「1」的訊號,通常ί;丨要使此半導體元件產生「。」盘 曰利用微影酬的方式移除多數條 m 563177 五、發明說明(?) 子 1 〇 〇 \4^ 到此半導辦-某些區域12〇,使字元線發生斷路之現象以達 精準的定彳_,件功旎上之需求。若是在微影製程中,無法 續蝕刻的過ΐί條字元線100上所需移除之位置,則在後 所欲移除ίίΐ,可能無法完全移除所欲移除之字元線上 之性处鱼^ ι!刀,或是蝕刻至位元線,而影響半導體元件 匕〆、1¾ 質 〇 读卩二叙的微影製程而言,若在光罩上的透光區與不 性密;車離相等’且光罩上透光區或是不透光區的區域 光= ’則在曝光的之後,圖形由光軍上轉移至 =精準度較高。但是隨著半導體元件的體積越來 來越^衣Ϊ寬度也越來越小,而半導體元件本身的功能越 來越因此在半導體元件内之線路也變得越來越複雜, 而光罩上之圖形也隨之變得複雜化,因而導致光罩上透 區與不透光區的區域性密度差異性非常之大。 本發明之方法可用來將光罩上的圖形順利地轉移 阻層上,以避免光學近似效應之發生。因此光罩上 可為/規則分佈之圖形,也可為一不規則分佈之圖形。^ 下所述,僅為本發明之一實施例,其為針對不規則^二 圖形進行圖形轉移,但並不限制本發明之範圍。參照,之 圖所系,此為一光罩上之圖形分佈情形。此光罩&〇?、、第四 來在多數條位元線與多數條字元線之部分區域上形為^ 層,以在後續蝕刻之製程中移除多數條位元線上之》^ ^ *' _ 口丨刀區Referring to the third figure, the LL A conductor element includes a top view of a plurality of bars as a semiconductor element. The signal of this half-line (bit line) 11G / child and most of the bit "1" is usually ";" to make this semiconductor element "." Pan said that the majority of m 563177 is removed by lithographic compensation. 、 Explanation of the invention (?) Sub 1 〇〇 \ 4 ^ At this point, the semi-conductor office-some areas 120, will cause the character line to be disconnected in order to accurately determine the demand. If it is the position on the character line 100 that cannot be etched in the lithography process, the character line 100 that needs to be removed later may not be completely removed. In the lithography process, which affects the semiconductor device dagger, 1 ¾ quality, and reads the second narrative lithography process, if the light-transmitting area on the reticle is dense and inexact; Areas with equal car separation and light transmission or opaque areas on the reticle light = 'After the exposure, the graphics are shifted from the light army to = high accuracy. However, as the volume of semiconductor devices becomes more and more, the width of the clothes is getting smaller and smaller, and the functions of the semiconductor devices themselves are becoming more and more complicated, and the circuits inside the semiconductor devices are becoming more and more complicated. It also becomes more complicated, which results in a very large regional density difference between the transparent area and the opaque area on the photomask. The method of the present invention can be used to smoothly transfer the pattern on the photomask to the resist layer to avoid optical approximation. Therefore, the photomask can be a pattern with a regular distribution or an irregular pattern. ^ As described below, it is only one embodiment of the present invention, and it is a pattern transfer for irregular ^ 2 graphics, but it does not limit the scope of the present invention. Referring to the figure, this is the pattern distribution on a reticle. This mask & 0, and fourthly, is formed as a layer ^ on a part of the areas of the plurality of bit lines and the plurality of word lines, so as to remove the plurality of bit lines on the subsequent etching process. ^ ^ * '_ Mouth 丨 knife area
563177 五、發明說明(8) 域’使半導體元件產生「〇」與「1」的訊號。因此此光罩 200包含多數個透光區21〇與不透光區,此些透光區域21〇 若對應到晶圓上,則表示多數條位元線上之部分欲移除的 區域。因半導體元件的功能趨於複雜化,因此光罩2〇〇上 之透光區域2 1 0相對也隨之複雜,而成為不規則形狀之分 佈圖形。 此區 統一次曝 光阻層上 域進行調 域性密度 於光罩上 中,因為 的過程後 上轉移所 對區域性 的過程之 移至光阻 言,將會 過程後, 形,而使 右要將區 步驟曝光 域性密 光的方 。若將 整,則 較小的 區域性 光學近 ,所有 需的圖 密度較 後,光 層上。 在曝光 區域性 光罩上 域密度 ,首先 度差異 式是相 曝光儀 在經過 圖形將 密度較 似效應 的圖形 形至光 大的區 罩上區 但是對 的過程 密度較 的圖形 較大之 會碰到 很大的 當難成 器的參 曝光及 能成功 大的圖 的缺陷 將會糾 阻層上 域進行 域性密 於光罩 中,因 小的圖 無法成 區域與 的難題 不規則 功地將 數針對 顯影的 地轉移 形而言 或是過 結在· 0 0若 調整, 度較大 上區域 為曝光 形將無 功地全 區域密 為要如 分佈圖形 光罩上的 區域性密 過程之後 至光阻層 ,將會在 度曝光而 起而無法 將曝光儀 則在經過 的圖形將 性密度較 不足而在 法順利在 部轉移至 度較小之 何定義區 ,若採用傳 圖形轉移至 度較小的區 ,光罩上區 上。但是對 曝光的過程 在經過顯影 成功由光罩 器的參數針 曝光及顯影 能成功地轉 小的圖形而 經過顯影的 光阻層上成 光阻層上。 區域分成兩 域密度的大 563177 五、發明說明(9) 小’接下來則是此兩種光罩的定位精度要非常高,容易因 光罩定位的問題而導致微影製程的失敗。因、此必須採用光 一 學近似效應修正法,以使光罩上之圖形完整地轉移至光阻 層上。然而光學近似效應修正法容易使製程複雜化並容易· 降低製程運作效率且提高製程運作之成本。因此必須採用 本發明之方法利用兩階段曝光之方式以成功且精準地將光 罩上的圖形轉移至光阻層上。 · 若微影製程欲將一不規則分佈之圖形(參照第四圖所 示)由光罩轉移至光阻層,以在後續蝕刻製程移除多數字 元線之部分區域,使半導體元件產生「G」與r i」的氘龙 時:首先必須提供一晶圓’該晶圓上至少包含“線, 兀線,且字元線與位元線上均包含一光阻層,此光阻屉 著製耘的需求不同而不同,在此製程中採用正光阻芦曰 下來將晶圓固定在曝光機上,並將第一光罩3〇〇 (泉接 五圖所不)安裝在曝光機上,經過定位及校正的手於、、、第 ,使用第一光源能量對晶圓上之光阻層進行第一阡=之後 光製程。第一光罩至少包含第一透光區310與第一不又的曝 區。第一光罩上的第一透光區310為半導體元件上之A光 線的區域。第一光源能量小於光阻層顯影之臨界值。子 第一透光區3 1 0之範圍均大於欲在光阻層上所通¥ φ 案的範圍。 战之圖形 接下來將第一光罩300由曝光機上取下,並將第一、>563177 V. Description of the invention (8) The field 'causes the semiconductor element to generate signals of "0" and "1". Therefore, the mask 200 includes a plurality of light-transmitting regions 21 and opaque regions. If the light-transmitting regions 21 correspond to the wafer, it indicates that a part of most of the bit lines is to be removed. As the functions of the semiconductor elements tend to be complicated, the light-transmitting area 210 on the photomask 200 is relatively complicated and becomes an irregularly shaped distribution pattern. This area uniformly adjusts the upper domain of the sub-exposure resistive layer to adjust the local density in the photomask, because the process of the regional transfer to the photoresistance after the process will be transferred to the photoresistor. Expose the area step to the side of the dense light. If it is adjusted, the smaller regional optics are near, and all the required image density is later on the optical layer. In the area density of the exposure area mask, the first degree of difference is that the phase exposure meter will shape the pattern with a density-like effect into the area of the light area through the pattern, but the process with a higher density will encounter the pattern. The large exposure of the difficult-to-use device and the defects that can successfully make the big picture will be localized in the photomask of the resistive layer, because the small picture can not be a region and the problem is irregular. For the development of the ground transfer shape, it may be too close to 0. If adjusted, the larger area is exposed, and the entire area of the reactive power is dense. The resist layer will be exposed at the degree, but the exposure meter cannot pass through the pattern with less sexual density and smoothly transferred to the definition area with a smaller degree in the method. If the pattern is transferred to a smaller degree, On the area above the mask. However, the exposure process can be successfully turned to a small pattern by the parameter needle of the mask device after development, and the developed photoresist layer is formed on the photoresist layer. The area is divided into two areas with a high density. 563177 V. Description of the invention (9) Small 'The next is that the positioning accuracy of these two photomasks is very high, and it is easy to cause the lithography process to fail due to the problem of the positioning of the photomask. Therefore, it is necessary to adopt the optical-approximate effect correction method so that the pattern on the photomask is completely transferred to the photoresist layer. However, the optical approximation correction method easily complicates the process and easily reduces the process operation efficiency and increases the cost of the process operation. Therefore, the method of the present invention must be used to successfully and accurately transfer the pattern on the photomask to the photoresist layer by using two-stage exposure. · If the lithography process intends to transfer an irregularly distributed pattern (refer to the fourth figure) from the photomask to the photoresist layer, in order to remove a part of the multiple digital element lines in the subsequent etching process, the semiconductor device will generate " G "and ri" deuterons: First, a wafer must be provided. The wafer contains at least "lines, lines, and word lines and bit lines both include a photoresist layer. The requirements of Yun are different. In this process, a positive photoresist is used to fix the wafer on the exposure machine, and the first photomask 300 (not shown in Figure 5) is installed on the exposure machine. The positioning and correction of the first, second, and third steps uses the first light source energy to perform the first photonic process on the photoresist layer on the wafer. The first photomask includes at least a first light transmitting region 310 and a first light source. Exposed area. The first light-transmitting area 310 on the first photomask is the area of A light on the semiconductor element. The energy of the first light source is less than the critical value for the development of the photoresist layer. The range of the sub-first light-transmitting area 3 1 0 Both are larger than the range of ¥ φ case that you want to pass on the photoresist layer. A photomask 300 is removed from the exposure machine, and the first, >
第15頁 563177 五、發明說明(10) -- 罩400 (參照第六圖所示)安裝在曝光機上,經過定位及 杈正的手績之後,使用第二光源能量對晶圓上之光阻層進 行第二階段的曝光製程。第二光罩包含第二透光區41〇與 第二不透光區。第二光罩上的第二透光區410為欲在光^ 層上形成的不規則分佈圖形。通常第二透光區41〇之範圍 均大於欲在光阻層上所形成之圖形的範圍。但是為了配合 製私的運作與提高製私之運作效率,通常第二光罩所包含 之不規則分佈圖形為近似在光阻層上所欲形成的不規則分 佈圖形,兩者之圖形並不一定要完全相同。第二光源能量 小於光阻層顯影之臨界值。而第一光源能量加上第二光源 能量則需大於或等於光阻層顯影之臨界值。在本發明中第 光源能$及第二光源能量所採用的光源種類並不限制, 通常是製程之需求而決定所採用之光源種類,諸如:偶極 光(dipole ray)、深紫外光(deep ultra —vi〇let 、 或是偏軸光等。通常第一光源能量均大於第二光源能量, 以獲得較佳之圖形轉移結果。但是隨著製 有時第-光源能量也會小於第二光源能;之 要求。 最後將晶圓由曝光機取下,並利用顯影劑移去不必要 ^光阻層,而將所需要之圖形留在晶圓表面上以進行後續 =驟。光阻層為一化學薄膜’其特性為曝光後會產生 光阻層為一正光阻層1經過曝光的部分正 九阻層在後績顯影的製程時會被顯影劑所移除而留下部分Page 15 563177 V. Description of the invention (10)-The hood 400 (refer to the sixth figure) is installed on the exposure machine. After positioning and correcting the work, the light on the wafer is lighted with the energy of the second light source. The resist layer performs a second-stage exposure process. The second mask includes a second light-transmissive region 41 and a second opaque region. The second light-transmitting region 410 on the second photomask is an irregular distribution pattern to be formed on the light-emitting layer. Usually, the range of the second light-transmitting region 41 is larger than the range of the pattern to be formed on the photoresist layer. However, in order to cooperate with the operation of private manufacturing and improve the efficiency of private manufacturing, usually the irregular distribution pattern contained in the second photomask is an irregular distribution pattern similar to the one intended to be formed on the photoresist layer, and the patterns of the two are not necessarily Be exactly the same. The energy of the second light source is less than a critical value for the development of the photoresist layer. The energy of the first light source plus the energy of the second light source must be greater than or equal to the critical value for the development of the photoresist layer. In the present invention, the types of light sources used for the first light source energy and the second light source energy are not limited. Usually, the type of light source used is determined by the requirements of the process, such as: dipole ray, deep ultra-violet light —Violet, or off-axis light, etc. Usually the energy of the first light source is greater than the energy of the second light source to obtain better graphics transfer results. However, with the system, the energy of the first light source may be smaller than the energy of the second light source; Finally, the wafer is removed from the exposure machine, and the unnecessary photoresist layer is removed using a developer, and the required pattern is left on the wafer surface for subsequent steps. The photoresist layer is a chemical Film's characteristic is that the photoresist layer will be generated after exposure. It is a positive photoresist layer. The exposed part of the ninth resist layer will be removed by the developer during the subsequent development process and leave a part.
563177 五、發明說明(11) 未曝光的正光 光的部分負光 而留下部分曝 使用的光線能 過曝光及顯影 當曝光的過程 光阻層曾經過 無法顯現出光 阻層顯影之臨 均不相同。 阻層。若光 阻層在後續 光的正光阻 量必須到達 的過程後, 中’所使用 曝光的製程 罩上所欲呈 界值。不同 阻層為 顯影的 一負光 層。光 一數值 顯現出 的光線 ,但在 現的圖 材料之 製程時 阻層在 以上時 光罩上 能量低 顯影製 形。此 光阻層 阻層, 會被顯 曝光的 ,光阻 所欲呈 於一數 程之後 數值 其顯 則未經過曝 影劑所移除 過程中,所 層才會在經 現的圖形。 值時’雖然 ,光阻層仍 通常稱為光 影之臨界值 當使用 阻層進行第 能量低於光 仍無法顯影 過曝光的光 當使用第二 阻層進行第 量影響之區 ,因此仍無 能量在光阻 第二光源能 之部分的光 量的影響, :-光罩300 〗第一光源能量對字元線 -階段之曝光製程後,雖然所使用之第—、 界值’而導致字元線 ; 而成功轉移第一光罩的圖形。但是字元層 二層,其化學性質已被第—光源 改、座 光⑽。及第二光源能量對字元線上部斤分改之Y :階段,曝光製程後,部分只受到第二乂 域’因第二光源能量小於光阻層顯影之萨界: 法顯影而成功轉移第二光罩的圖形。由於光: !内有累加之作用’因此當第-光源能量力 Ϊ大於或等於光,阻層顯影之臨界值, 上 阻層,因同時受到第一光源能量及第二=t上 而有足夠之動能發生化學變化。因為 第17頁 563177 五、發明說明(12) 例中所使用的光阻層為正光阻層’因此在經過後續顯影之 製程後,部分同時經過第一光源能量及第二光源能量=射 之光阻層將被顯影劑移除,以順利由第二光罩上轉移圖形 至光阻層。接下來可進行蝕刻之製程以移除部分之字元線 ,使半導體元件完成之後可產生「〇」與「丨」的訊號。 第二圖所示,此為在同一參考點上將第-光軍與 二ί置夕―璺之不意圖。第一光罩之第一透光區310與第 “上二τί光區410所相互重疊之部分700,即為在光 參;第八能量與第二光源能量之區域。 部分,多數字元,_。的某些 ,光阻層同時接典笛一 光阻。在經過顯影製程後 82〇將可被精確地:移除?原而此!與第二光源能量之區域 。 ”而可順利進行後續之蝕刻步驟 在另外一個實施例中,若 線的某些部分内植入在夕數字7G線及多數位元 光阻層之材質。當利用離子,則可採用負光阻層作為 阻層進行曝光之製程,^明之曝光方法,分兩階段對光 接受第一光源能量與第二二過,f之製程後,光阻層同時 下’而欲植入離子的 Y源靶虿之區域將可被精確地留 的G域上之光阻層將可被精確地移除, 第18頁 563177 五、發明說明(13) 以順利進行後續之離子佈植的· 祀據乂上所述之貫施例’ 皆;曝光之方式將圖形由光罩成功::::方法,利 的=士:第一階段為對欲形成圖形=表面 ,以一第一光源能量及第一光 A上的先阻層 段的曝光,以改變光阻層之枯料性質。第㈣行第—階 ::形第第ί階段為使用一含有第二圖形的第ii含气 曝光:第二光軍包含-不規則分佈或一 阻f進行 形。最後進仃顯影的步驟後,若使用之f-圖 障層為負被移㊉,若使用“ 下來m、 次曝光步驟的光阻層將合i貴: :製程i t第以:後續進行钱刻製程以 影臨界值,且/ t里 源能量均小於光阻層的碩 等於光阻層的顯影臨界值。本發明可=於或 尺寸之精準度教簡化製程所需之步驟。:::; =圖形 ;:::r ’更可降低製程運作之生=以ΐ 於 i之增進,/且為前所未見之設計’具有功效性與進i 為此:謹貴牛’轰依法具文申請之: 感德便。冑查委貝评予審查’並祈早日賜准專利,至563177 V. Description of the invention (11) Unexposed positive light Part of the negative light leaving part of the exposed light can be used for overexposure and development. During the exposure process, the photoresist layer has not been able to show that the development of the photoresist layer is different. . Barrier layer. If the photoresist layer is in the process of exposure after the process of the positive photoresistance of light must reach the threshold value on the mask used in the exposure process. The different resist layers are a negative light layer for development. The value of light shows the light, but in the process of the current picture material, the resist layer is above, and the energy on the mask is low to develop the shape. This photoresist layer will be exposed. The photoresist will show a value after a few seconds, and its display will not show the pattern until the photoresist is removed. When the value is' although, the photoresist layer is still commonly referred to as the critical value of light and shadow. When using the resist layer for the first energy is lower than the light and the light cannot be overexposed. When using the second resist layer for the area affected by the amount, there is still no energy. The effect of the amount of light in the part of the light source of the second light source of the photoresistor,:-Mask 300 〖After the first light source energy has been applied to the character line-stage exposure process, the character line is caused by ; And successfully transferred the graphics of the first mask. However, the character layer has two layers, whose chemical properties have been changed by the first light source and the light source. And Y: stage of the second light source energy to the upper part of the character line. After the exposure process, only part of the second field was affected. Because the second light source energy is less than the Sa boundary of the photoresist layer development: Graphic of two photomasks. Due to the cumulative effect of light: ', so when the first light source energy is greater than or equal to the light, the critical value of the development of the resist layer, the upper resist layer is sufficient because it is simultaneously subjected to the energy of the first light source and the second = t The kinetic energy of the chemical changes. Because the photoresistive layer used in the example of (12) of the invention is a positive photoresistive layer on page 17, 563177. Therefore, after the subsequent development process, part of the light source passes through the first light source energy and the second light source energy = the emitted light. The resist layer is removed by the developer to smoothly transfer the pattern from the second photomask to the photoresist layer. Next, an etching process may be performed to remove a part of the word lines, so that the signals of "0" and "丨" can be generated after the semiconductor device is completed. As shown in the second figure, this is the intent of placing the first-Guangjun and the second one at the same reference point. The overlapping part 700 of the first light-transmitting area 310 and the first upper light area 410 of the first photomask is in the optical parameter; the area of the eighth energy and the energy of the second light source. Part, the multi-digit element, _. In some cases, the photoresist layer is connected to a photodiode at the same time. After the development process, 82% can be accurately removed: the original and here! And the area of the second light source energy. The subsequent etching step is in another embodiment, if some parts of the line are implanted with the material of the 7G line and the photoresist layer of most bits. When using ions, a negative photoresist layer can be used as the resist layer to perform the exposure process. The exposed exposure method accepts the energy of the first light source and the second pass through the light in two stages. After the f process, the photoresist layer is simultaneously lowered. 'And the region of the Y source target where the ions are to be implanted will be accurately left, and the photoresist layer on the G domain will be accurately removed. Page 18 563177 V. Description of the invention (13) to successfully follow up The ion implantation of the sacrifice is based on the consistent examples described above; all; the way of exposing the figure is successfully performed by the photomask :::: method, profitable = taxi: the first stage is to form a graphic = surface, A first light source energy and the exposure of the first resistive layer segment on the first light A are used to change the dry material properties of the photoresistive layer. The second line of the first stage: the first stage of the shape is the second phase containing a second figure containing gas exposure: the second light army contains-an irregular distribution or a resistance f to shape. After the final development step, if the f-pattern barrier layer used is negatively shifted, if the photoresist layer used in the "down m, sub-exposure step" step will be more expensive: The manufacturing process is based on a critical value, and the source energy in / t is less than the development threshold of the photoresist layer. The present invention can teach the steps required to simplify the process with the accuracy of or size. ::; = Graphics; ::: r 'more can reduce the life of the process operation = with the improvement of i in i, and a design never seen before' has effectiveness and progress i To this end: Honorable cows' Hang according to law Applying for: Sense of morality. The commissioner will review and review the application, and pray for the grant of a patent at an early date.
563177 五、發明說明(14) 以上所述僅為本發明之較佳實施例而已,此實施例僅 係用來說明而非用以限定本發明之申請專利範圍。在不脫 · 離本發明之實質内容的範疇内仍可予以便化而加以實施, 此等變化應仍屬本發明之範圍。因此,本發明之範疇係由 以下之申請專利範圍所界定。 、563177 V. Description of the invention (14) The above description is only a preferred embodiment of the present invention, and this embodiment is only used to illustrate rather than to limit the scope of patent application of the present invention. These changes can be implemented without departing from the scope of the present invention. Such changes should still fall within the scope of the present invention. Therefore, the scope of the present invention is defined by the following patent application scope. ,
第20頁 563177 圖式簡單說明 第一圖為光學近似效應之示意圖; 第二圖為光學近似效應修正法之示意圖 第三圖為一半導體元件之俯視圖; 第四圖為欲在光阻層上所形成之不規則圖形之示意圖 第五圖為第一光罩之示意圖; 第六圖為第二光罩之示意圖; 第七圖為第一光罩與第二光罩重疊之示意圖;及 第八圖為利用本發明之曝光方法,在晶圓上形成光阻 層之示意圖。 主要部份之代表符號: 10 微 米 見 方 之 方 塊 圖 15 圓 形 20 的 額 外 凸 出 之 圖 形 25 方 形 之 圖 形 100 字 元 線 第21頁 563177 圖式簡單說明 1 1 0 位元線 1 2 0 字元線上某些需移除之區域 2 00 光罩 2 1 0 透光區 300 第一光阻層 310 第一透光區 400第二光阻層 410 第二透光區 700 第一透光區與第二透光區重疊之區域 8 0 0 字元線 8 1 0 位元線 82 0光阻層同時接受第一光源能量與第二光源能量之 區域 ♦Page 563177 Brief description of the diagram The first diagram is a schematic diagram of the optical approximation effect; the second diagram is a schematic diagram of the optical approximation correction method; the third diagram is a top view of a semiconductor device; the fourth diagram is a photoresist layer The schematic diagram of the formed irregular figure. The fifth diagram is a diagram of the first mask; the sixth diagram is a diagram of the second mask; the seventh diagram is a diagram of the overlap of the first mask and the second mask; and the eighth diagram In order to use the exposure method of the present invention, a photoresist layer is formed on a wafer. The main part of the symbol: 10 micron square block diagram 15 Circle 20 additional protruding figure 25 Square figure 100 character line page 21 563177 Illustration of the diagram 1 1 0 bit line 1 2 0 character Some areas to be removed on the line 2 00 Mask 2 1 0 Light-transmitting area 300 First photoresist layer 310 First light-transmitting area 400 Second photoresist layer 410 Second light-transmitting area 700 First light-transmitting area and first Area where the two light-transmitting areas overlap 8 0 0 Word line 8 1 0 Bit line 8 20 Area where the photoresist layer simultaneously receives the energy of the first light source and the energy of the second light source ♦
第22頁Page 22
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