TW561572B - Mushroom stem wafer pedestal for improved conductance and uniformity - Google Patents

Abstract

Configurations of semiconductor processing chambers to promote consistency of pressure profiles across the surface of the wafer being processed. One aspect of the chamber configuration is a mushroom-shaped wafer support structure with a broad electrode supported by a relatively narrow vertical stem arising from the bottom wall of the chamber. The stem may be centered under the electrode or, optionally, is offset from its center. Services for the electrode are provided via the narrow vertical stem. Another aspect of the chamber configuration is twin processing regions together in a single chamber, evacuated by a single vacuum pump.

Description

561572

V. Description of the invention (Field of invention: _ The present invention is generally related to the field of semiconductor object manufacturing. More specifically, the present invention is related to equipment and processes for supporting semiconductor wafers in the process chamber. Background of the invention: _ When manufacturing semiconductor objects Uniformity and consistency are very important. With a specially designed process chamber, various manufacturing steps (etching, deposition, etc.) are performed in a vacuum and controlled environment. The size and shape of the process chamber can affect low pressure The behavior characteristics of the gas inside it, therefore, affect the effect of the gas on the semiconductor work piece. The problem that needs special attention is how to maintain the uniformity of the dust force distributed on the surface of the work piece. One point in the work piece is different from the other point In contrast, even the slightest difference in pressure can cause a substantial difference in the degree of consistency between the surface of the working wafer and the molecules it contacts. The current process room configuration is due to the inconsistent process caused by the above-mentioned difference in I force. Very troubled. As shown in Figure 1, this figure shows a structure that can be used to support a semiconductor wafer in a process chamber. A semiconductor wafer 30 is placed in the process chamber 10 and placed on a cylindrical support structure 20. The cylindrical support structure 20 occupies a better portion of the internal space of the process chamber 10. The gas system in the vacuum chamber 10 is extracted from the space between the cylindrical support structure 20 and the inner wall of the vacuum chamber 10. Then, the gas passes through an end branch and is connected to a vacuum pump (a turbo molecular pump as shown in the figure). Pu Channel left the process chamber 1 0. This process is configured with an unfavorable pressure gradient distributed on the crystal. Page 4 This paper applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the note on the back first) Please fill in this page again)-Ordered · Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 561572 A7

V. Description of Invention () Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The pressure gradient is due to the very different minimum path lengths of the gas molecules above the cylindrical support structure 20 into the vacuum chamber. The minimum path length end depends on the starting positions of those gas molecules on the wafer 30. . The longer the minimum path length to the vacuum pump, the greater the pressure on the area on the wafer. As shown in Fig. 2, this figure illustrates a process chamber and a cylindrical support object arranged in accordance with conventional techniques. In the process chamber 40, a semiconductor wafer 70 to be processed is supported on a cylindrical support 50. The cylindrical support is supported by a cantUever support 60 extending from a side wall of the process chamber 40. Although the entrance 80 to the vacuum pump is located between the wafer 70 and the bottom of the cylindrical support structure 50, the minimum path length of the gas molecules through the surface of the wafer 70 is not uniform enough. When a cantilever is used to support 60, gas molecules that are basically close to the side of the wafer reach the entrance of the vacuum pump 8 will have a longer minimum path length than gas molecules at other points on the wafer 70 (to be flashed Cantilever support 60). This will again cause anisotropic stress conditions on the surface of the wafer 70. Another disadvantage of this configuration is that it does not allow the cylindrical support structure to move along the z-axis direction (that is, along a vertical axis). As shown in Figure 3, this figure is a cross-sectional view of a process chamber J 2 configured according to conventional techniques. The process chamber 12 has two sets of process areas 18 that can process two wafers simultaneously. The two sets of process areas 18 are evacuated by a plurality of sets of suction channels 31 connected to a peripheral line on the wall of the process room. As shown in Figure 4, this figure is a plan view of the process chamber of Figure 3. The extraction path is shown in this figure. Peripheral Fanpu pipeline 1 8 for each process area 2 5 Page 5 This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) Order ·

Me. 561572 A7 B7 Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Rehabilitation Du printed 5. Description of the invention () Connected to a common vacuum pump by a common extraction line 19. The air inlet line 19 is connected to the pump line 25 of each process area 18 through the air suction duct 21. The suction line 19 is connected to a vacuum pump by a suction line (not shown). As shown in Figure 5, this figure shows a cross-sectional view of a process chamber configured in accordance with another conventional technique. The process chamber 39 has a process area 42 for processing a wafer. The process area 42 is evacuated by a peripheral pump line 53 mounted on the wall of the process chamber. An extraction line 57 connected to the pump line 53 in the process area 42 is connected to the vacuum pump for extraction by an extraction line (not shown). The configuration of Figures 3 to 5 has the same problem as Figures 1 and 2, because the minimum path length of the molecules on the wafer surface is obviously not private, so that a pressure gradient will be caused on the wafer surface during the process. . Offset pump configuration (Figure 1 and Figures 3-5) and cantilever support configuration (Figure 2) inherently have such problems. The pressure gradient basically causes uneven manufacturing on the surface of the wafer. Therefore, a process chamber needs to be designed to reduce the pressure difference on the wafer surface by providing a more consistent minimum path length from the wafer surface to the fan area. Another challenge in semiconductor manufacturing is how to provide consistent conditions in two process chambers at the same time so that two semiconductor workpieces can be processed simultaneously. The semiconductor process technology that can be used today does not provide consistent conditions in two seemingly identical process chambers. This is because every page of this paper applies the Zhongguanjia Standard (CNS) A4 specification (21 ( ) χ 297 公 爱) "-(Please read the notes on the back before filling this page)

Book · Description of invention () Pretend that the private owner owns the only 2 pumps of his only child. Although the control commands for the operating parameters of the process chambers are the same, the slight differences shown by the two vacuum pumps will cause the pressure curve in the two process chambers (at least including in the workshop and time) due to the gas transmission path. This is quite a difference. Such problems will create obstacles to increasing throughput by applying the same steps on multiple wafers simultaneously. Therefore, a method of maintaining the same pressure curve conditions in a process chamber that performs two processes simultaneously is also required. # 明 Purpose and summary: One aspect of the present invention is to provide more uniform process conditions for semiconductor wafers processed in a process chamber. Another aspect of the present invention is to provide a more uniform pressure condition for a semiconductor work piece to be processed in a vacuum process chamber. Another aspect of the present invention is a two-wafer processing chamber. By simultaneously providing a pair of wafers with substantially the same process conditions, the production capacity of the wafer process can be enhanced. Another aspect of the present invention is to provide a semiconductor wafer process chamber with a shorter physical path than conventional techniques. Another aspect of the present invention is to provide several semiconductor wafers in a process chamber with substantially the same conditions. By designing the shape, gas transfer, and gas transfer parameters, the same conditions are maintained without relying on active control. Another aspect of the present invention is to provide a wafer support structure having a support pillar supporting a chuck (Chuck) from below, and the support pillar is far narrower than a lost disk. Page 7 561572 V. Description of the invention () is narrower. Another aspect of the present invention is to provide a wafer support structure having a chuck, which is supported by a support post, which is much narrower than the chuck. Another aspect of the present invention is to provide a misalignment and support pillar structure to increase pressure uniformity in a wafer processing chamber. Another aspect of the present invention is a wafer support structure. The volume of the process chamber below the reel is large, so the volume on the chuck will decrease when the total volume of the process chamber remains unchanged. A specific embodiment of the present invention is a process chamber, which is a wafer support structure having a generally mushroom-shaped appearance. A large circular chuck is used to support the wafer in the process, and a pillar is supported under the chuck. The chuck is fully supported by the post. The pump channel that evacuates the process chamber is basically placed under the chuck. A process chamber for processing semiconductor elements has a process chamber body, a chuck, and a pillar. The main body of the process chamber has a bottom wall, and a pump channel is installed in the bottom wall. The chuck is located in the process chamber body and has an upper surface and a lower surface facing the bottom tread. The upper surface of the chuck is wide enough to support the semiconductor element. The column supports the chuck and extends from the bottom wall of the process chamber body to the lower surface of the chuck. The width of the post is much narrower than the width of the chuck. The other parts of the present invention are specifically implemented by processing two semiconductor workpieces (i.e., wafers) simultaneously in a process chamber under substantially the same process conditions. The process chamber contains at least the process chamber body, a pump channel is arranged in the bottom wall; and at least one vacuum pump is included, which is in fluid flow with the pump channel. ..., (Please read the precautions on the back before filling out this page), OK. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative 561572 . A pair of supporting objects and pillars each supporting the supporting object are arranged in the process room. Each support object has an upper surface and a lower surface facing the process 1: the bottom wall of the body. The pillars support their respective supporting objects and extend from the bottom wall of the process chamber body to the lower surface of the supporting objects. The upper surface of each building object has sufficient width to support the semiconductor components. The width of each post is substantially smaller than the width of the support object. There are still other parts of the above aspects, which are specifically implemented in a process chamber using wafer support assemblies to support semiconductor wafers. The wafer support assembly includes a wafer support object (ie, a chuck) and a post. The wafer support object has a wide enough upper surface to support the semiconductor crystal. The cylinder extends from the lower surface of the wafer support object, and its width is substantially smaller than that of the wafer support object. Additional objects and advantages of the present invention will become apparent upon reading the following detailed description in conjunction with the associated descriptive drawings. Details of the invention vary: The process chamber configuration according to the present invention yields at least two distinct benefits. According to the present invention, when a wafer support structure is combined with a pump out geometries, a useful advantage of this novel combination of 厶, σ, and 万 is that it can reduce the number of processes in the process chamber 'τ < Pressure gradient on the wafer surface. Since this improves the uniformity of the process on the wafer surface, the reduction of the pressure gradient is beneficial, so the number of high-quality wafers produced on the mother wafer to one wafer can be increased. Page 9 (Please read the precautions on the back before filling out this page) Order-Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economy 561572 A7 ----- B7 Description of the Invention () Another useful advantage of the present invention is the manufacturing process High fluid transmission in the chamber. A wafer support structure installed therein increases the volume of the process chamber below the chuck, so the volume above the chuck will decrease (like the chuck moves upward in the process chamber) when the total volume of the process chamber remains unchanged . The magic volume below this chuck is exactly the part of the process chamber through which the gas flows to the pump channel of the bottom wall of the process chamber. Because the volume is relatively large, the transferability will become as large as the liquid flow path and become higher. When the extraction path has a higher transferability, the pumping efficiency is improved and a stable pressure can be maintained on the wafer surface. In addition, 'larger fluid volume inside the process chamber will increase process stability' because the transient changes in pressure or flow are easier to control in larger volumes. Maintaining such a large internal fluid volume without increasing the external volume of the process chamber will increase the stability of the process without increasing the footprint of the process chamber (that is, how much real estate area the process chamber occupies on the manufacturing floor). As shown in FIG. 6, this figure illustrates a wafer support chuck according to a specific embodiment of the present invention. A wafer 3 50 is placed in the process chamber 3 3 0 through the wafer transfer channel 3 3 4. After being placed in the wafer chamber 330, the wafer 350 is placed on the chuck 310. A relatively thin post 32o supports the chuck 31o within the process chamber 330. The post 320 extends from the bottom surface 312 of the chuck 310 to the bottom step 332 of the process chamber 330. The pillar 314 extends out of the bottom of the process chamber 330 and steps 3 3 2 to provide the chuck 31 0 related services. The support provided by the outer part of the pillar 314 preferably includes radio frequency energy (RF energy), as an electrostatic chuck function. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297). (Please read the back first Please pay attention to this page, please fill in this page) 7th order · 561572 A7 _________ B7 5. The DC potential, helium and coolant of the electrostatic chucking function printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. (Please read the precautions on the back before filling this page) On the other hand, the pillar 320 has a bellows 322, which allows the length of the pillar 320 to be adjusted back and forth between high and low. When the pillars are low, the chuck 310 is positioned so that the wafer 350 can be easily transferred into or out of the process chamber 330 through the wafer transfer channel 334. When the wafer 35 is prepared, the chuck 310 will rise to a high position due to the elongation of the pillar 320. Increasing the chuck 310 will bring the wafer 350 closer to the shower head at the top of the process chamber, which will spray the reagent gas. This movement along the z-axis between the upper and lower sides prevents the plasma cloud from “seeing” the wafer transfer channel 334 during the manufacturing process, so that the electric cloud can be prevented from being distorted by extending into the wafer transfer channel 334. The vacuum state in the process chamber 330 is maintained by a vacuum pump 340 located in the bottom wall 332 of the process chamber 334 and connected to the suction channel 324. Importantly, the suction channel 324 is at least partially mounted below the chuck 310. Such a device basically allows the minimum path lengths of gas molecules to move from above the wafer 350 to the extraction channels 3 24 to be equal. As shown in FIG. 7, this figure illustrates a wafer support structure according to another embodiment of the present invention. A chuck 410 supports a wafer 450 which is to be processed in the wafer chamber. A relatively thin post 420 supports a chuck 410, which can extend from the underside 412 of the pan 410 to the bottom surface 410 of the process chamber. This off-set arrangement makes it possible to install suction channels. This will make it easier for gas molecules to move from above the wafer 450 to the minimum path length of the extraction channel 424, and be sucked out by the pump 440. Page 11 This paper size applies to Chinese National Standard (CNS) A4 specifications (210X 297 mm) 561572 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy On 20, you can change the length of the post 420, and then you can move the chuck 410 up and down. When the chuck 41 is located at a low position, the wafer 450 can be put into or removed from the process chamber 430 through the wafer transfer path 434. When the wafer 450 process is ready to be performed, the chuck 410 will raise its position so that the wafer 450 is located closer to the nozzle sprinkler 436. The sprayer > Li > will distribute the reagent gas to the wafer 4 5 0 Space above. This movement between the upper and lower sides along the z axis makes the plasma cloud unable to “see” the wafer transfer channel 434 during the manufacturing process, and thus prevents the plasma cloud from being distorted by extending into the wafer transfer channel 434. With a portion 414 of the pillar 420, it protrudes from the bottom wall 432 of the process chamber 430 to provide support to the chuck 410. Fig. 8 'shows a specific embodiment of an alternative dual process area according to the invention. The two process areas 53 and 58 are adjacently placed in a single process chamber 500 'and provide a pair of wafers 550 and 590 with substantially the same process conditions. The partition 502 extends at least below the chucks 510 and 560 and separates the two process areas 53 and 580 from each other. Each process area 530, 580 has a chuck 510, 5 60 to support a respective wafer 550, 590 during the process. The wafers 550 and 590 and the support chucks 510 and 560 indicated by dashed lines in the figure represent that the chucks on which the wafers 550 and 590 are placed are moved to a higher position in order to access the gas shower heads 536 and 586. At the lower position, the chuck 5 1 2 is placed just below the wafer transfer channel 534 ', and the wafer 550 is put into or removed from the wafer transfer channel through the process. Page 12 (CNS) A4 specifications (21GX 297) (Please read the precautions on the back before filling this page)

Order 561572 A7 I ____g7 V. Description of Invention () Area 530. Similarly, the chuck 5 62 in the process region 58 next door is also positioned just below the wafer transfer channel 5 8 8 at a low position. A post 526 having an inner portion 528 supports the chuck 512 of the left process area 530, and the post is free to move upward to set the chuck 51 to a higher position. Similarly, a post 576 with an inner portion 578 supports the chuck 562 of the right-hand process area 580, and the post is free to move upward to place the chuck 560 in a higher position. The variable length of the columns 526, 576 is facilitated by the structure of the individual folded columns (not shown in the figure), which are located in the columns 526, 528, 576, 5 78 internal. According to this specific embodiment, the pillars 526, 576 are offset from the centers of the respective chucks 5, 12, 562. This deviation configuration allows the largest proportion of the chuck to be located above the suction channel 5 2 4. A common Shin 2 Fanpu 540 evacuates the two process areas 530, 580. The gas in the left process region 530 is extracted to the vacuum pump 540 through the suction channel 524. Similarly, the gas in the right process region is extracted through the same suction channel 524. The two process areas 530, 580 and the common vacuum fan 540 constitute a wafer processing system. As far as plasma is concerned, the electric masks on both sides of the partition wall 502 will only see their own process area, as if they are still a separate process room. Electricity is generated separately in each process area. However, the two process areas 530, 580 have the same process conditions because they are connected to the same pumping pump, so they have the same pressure. Support for the chucks 510, 560 is provided by the post portions 514, 574 protruding from the bottom of the process chamber. Page 13 This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling out this page) Order-Printed by the Wuzu Economic Affairs Bureau Intellectual Property Bureau Employee Consumption Cooperative 561572 A7 B7 5 2. Description of the invention () (Please read the notes on the back before filling out this page) As shown in Figure 9, this figure illustrates a specific embodiment of another alternative dual-process area according to this invention. The two process areas 5 3 1 and 5 8 1 are arranged next to each other in a single process chamber 501 and provide substantially the same process conditions for a pair of wafers 550 and 590. The partition wall 502 extends at least below the chucks 511 and 561 and separates the two process areas 531 and 581 from each other. Each of the process areas 531, 581 has a chuck 511, 561 for supporting a respective wafer 550, 590 during the process. The wafers 550 and 590 and their support chucks 511 and 561 indicated by dashed lines in the figure represent that the chucks on which the wafers 550 and 590 are placed are moved to a higher position in order to approach the gas diffusion nozzles 536 and 586. In the lower position, the chuck 5 1 3 is placed just below the wafer transfer channel 534 ', and the wafer 5 50 is inserted into or removed from the left process region 5 3 1 through the wafer transfer channel. Similarly, the chuck 5 6 3 in the right-side process area 5 8 1 is also placed just below the wafer transfer channel 5 8 8 when it is low. Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A post 527 with an inner portion 529 supports a chuck 513 on the left process area 531. The post can be moved upward freely to place the chuck 511 at a higher position. Similarly, a post 577 having an inner portion 579 supports the chuck 563 of the right-hand process area 581, and the post can be freely moved upward to place the chuck 561 in a higher position. The variable lengths of pillars 527 and 577 are facilitated by the structure of individual folded columns (not shown in the figure), which are located in the pillars 527, 529, 577, 579 in the figure internal. According to this specific embodiment, the posts 527, 577 are placed below the center of their respective chucks 513, 563. This center column configuration (centered stem, page 14) This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297). 561572 A7 B7 5. Description of the invention () Helium gas to cool the wafer. Above the chuck 6 1 0 An electrostatic disk is installed to keep the wafer in the process (please read the precautions on the back before writing this page). It can be safely located in an appropriate place (not shown in this figure). The internal shaft 614, along with other supports, provides DC potential to drive the electrostatic chuck 616. This invention has been described by preferred embodiments, but without departing from the field of this invention, various changes and improvements to the described embodiments are made. It is acceptable. This invention is only limited by the scope of the following patents. Brief description of the drawings: Figure 1 is a process room with a cylindrical cylindrical yen support structure configured according to the first conventional technology. Partial cross-sectional view. Figure 2 is a partial cross-sectional view of a process chamber with a cantilever-like wafer support structure configured according to the second conventional technology. Figure 3 is a configuration according to the third conventional technology. A cross-sectional view of the process room in Figure 4. Figure 4 is a top view of the process room in Figure 3. Figure 5 is a cross-section view of a process room configured according to the fourth conventional technology. Employee Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs FIG. 6 is a partial cross-sectional view of a process chamber configured according to a first embodiment of the present invention. FIG. 7 is a partial cross-sectional view of a process chamber configured according to a second embodiment of the present invention. Figure 8 is a dual process configuration according to the third embodiment of the present invention. Page 16 The paper size is suitable for SS Home Standard (CNS) A4 specifications (210x297 cm) — one — 561572 A7 B7 Explanation of the invention () Partial cross-sectional view of a regional wafer processing system. FIG. 9 is a partial cross-sectional view of a dual-process regional wafer processing system configured according to another fourth embodiment of the present invention. FIG. 10 is a Partial cross-sectional view of a wafer support structure consistent with various embodiments of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before writing this page). Explanation: 1 0, 1 2, 39, 330, 430, 500, 501 18, 42, 530, 531, 580 ° 581 324, 424, 524 42 31 50 19 20 21 25, 53 30, 70 57 60 80 310, 410, 510, 512 560, 561, 562, 563 312, 412, 61 2 314, 414, 514, 51 5 575 320, 420, 526, 527 577, 620 322, 422, 622 350, 450, 550, 590 513 610 574 576 Page 17 Process chamber Process area Extraction channel Cylindrical support structure Extraction duct Peripheral pump line Semiconductor wafer extraction line Cantilever beam Cantilever beam supporting vacuum pump Inlet chuck The bottom surface of the chuck extends out of the bottom wall Part of the column fold Column paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 561572 A7 B7 V. Description of invention () Printed by Employee Consumer Cooperative of Intellectual Property Bureau of Ministry of Economy 332 > 432 Bottom wall of process room Circular transfer channels 336, 436 Spray heads 340, 440 Vacuum pumps 502 Partition walls 528, 529, 578, 579 Part of the column 534 ^ 588 Wafer transfer channels 536, 586 Spraying gas Sprinkler 540 Common vacuum pump 614 Shaft inside the column 616 Electrostatic chuck 625 Large flange 626 Outer shrink 艢 628 Inner shrink wall 632 Radio frequency connection 634, 636 Fluid connector page 18 (Please read first (Notes on the back then fill out this page)

Order this paper's degree is applicable to China National Standard (CNS) A4 specification (210X297 mm)

Claims (1)

561572 A8 B8 6. Scope of Patent Application 1. A process room for processing a semiconductor object, the process room includes at least: a chamber body, which has a bottom wall with an exhaust channel in the wall; a support object, which is located at Inside the process chamber body, the supporting object includes at least: an upper surface and a lower surface facing the bottom wall; wherein the supporting object has a first width sufficient to support the semiconductor object on the upper surface; and * 1 A pillar 'extends from the bottom wall of the self-made process chamber body to the lower surface of the supporting object, and the pillar supports ~ the supporting object; wherein the pillar has a second width that is substantially smaller than the first width. 2 · A process chamber for processing a semiconductor object as described in item 1 of the patent scope, wherein the object support described above is substantially circular, has a center of the circle, and the above-mentioned pillar is basically connected to the object support. Round center. 3. A process chamber for processing a semiconductor object as described in item 2 of the scope of the patent application, wherein at least a part of the above-mentioned exhaust channel is located under the support object. Page 19 This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before writing this page) · Equipment · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 561572 A 1¾ chamber for processing a semiconductor object as described in claim 1 of the patent scope, wherein the above-mentioned support object is substantially circular, has a circle, and wherein the above-mentioned pillars are basically connected to the center from an off-center position Supporting objects. Jun Shen calls a process chamber for processing a semiconductor object as described in item 4 of the patent scope, wherein the above-mentioned exhaust channels are basically all located below the support object. 6 · I & to ′ for processing a semiconductor object as described in item 1 of the scope of the patent application, wherein the above-mentioned pillars include at least folded pillars, which allow the supporting object to move relative to the bottom wall of the process chamber. 7. A process chamber for processing a semiconductor object as described in item 1 of the scope of patent application, wherein the support object is supplied with a DC potential by a rafter. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Thermal conductivity with semiconductor wafers. 9 · A process chamber for processing a semiconductor object as described in item 1 of the scope of the patent application, which is provided by a column to provide coolant to the support. Page 20 This paper applies the Chinese National Standard (CNS) A4 specification ( 210X 297 mm) 561572 A8 Width supports one of two semiconductor objects on its first upper surface, and the first support object is substantially wider than the first pillar; a second support object, which is located inside the process chamber body, violates the second The supporting object includes at least: a second upper surface and a second lower surface facing the bottom wall; and a second pillar supporting the second supporting object, the second pillar extending from the bottom wall to the first Two lower surfaces, wherein the second supporting object has sufficient width to support the other of the two wafer objects on its second upper surface, and the second supporting object is substantially wider than the second pillar; Wherein at least a part of the above-mentioned suction channel is located below the first support object and at least a part is located below the second support object. 17 · The process system according to item 16 of the scope of patent application, wherein any one of the first and second support objects has a geometric center, and wherein the first pillar is basically connected to the first support object And the second pillar is basically also connected to the geometric center of the second support object. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 18 · The process system described in item i 6 of the scope of patent application, in which the first and second supporting objects are supplied with DC potential, helium and cooling through their respective columns Agent. Page 23 This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 public goods) 561572 8 8 8 8 ABCD 6 'application for patent scope 9 The first column of the neutron supporting the upper branch is supported by Xu Yitong. Able to process; L-shaped column wall is good at describing the institute 'Xiangzhuxiu 6 Caier 1 1 including room No. Bao Chengwei less system Fan Lizi can apply for a special body for the special column This Xu Yunneng system folds the column and includes the less; to move the second column of the mover, the axis should be straight toward the Chinese side> 50, the second column of the second column that is directly supported by the axis of the opposite side piece I follow the regularity of the room along the bottom of the wall ......... Packing: (Please read the precautions on the back before filling out this page) # Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 24 This paper Standards apply to China National Standard (CNS) A4 specifications (210X297 mm)