559941 A7 B7 五、發明説明（〇 (發明之背景） 本發明是關於一種蝕刻半導體元件並加以製造的裝置 ，又關於一種具備測定鈾刻的深度的測定手段的裝置。 在形成半導體元件中，爲了除去形成在半導體晶圓的 表面上的介質材料，絕緣材料的層等各種材料的層或是爲 了在此些層形成圖案，廣泛地使用乾蝕刻。在進行該乾蝕 刻時，在上述層的加工中調節蝕刻成爲所期望的蝕刻深度 或層膜厚爲極重要，所以被要求正確地求出鈾刻的終點或 膜厚。 然而，眾知使用電漿加以乾蝕刻半導體晶圓加以處理 之際，來自包含於電漿光的特定波長的光的發光強度，隨 著特定膜的蝕刻進行有所變化。作爲檢測該半導體晶圓的 蝕刻終點或膜厚的蝕刻狀態的一種技術。眾知有在乾蝕刻 處理中檢測來自電漿的特定波長的發光強度的變化，而依 據該檢測結果來檢測特定膜的鈾刻終點或膜厚的技術。欲 提昇該檢測精度，必須減低起因於依雜訊所產生的檢測波 形的變動的誤檢測。 如此地作爲檢測半導體晶圓的蝕刻終點的技術，眾知 有使用揭示於日本特開平5 - 1 7 9 4 6 7號公報（習知 技術1 )，特開平8 — 2 7 4 0 8 2號公報（習知技術2 )’特開2 0 0 0 — 9 7 6 4 8號公報（習知技術3 )， 及特開2 0 〇 〇 - 1 〇 6 3 5 6號公報（習知技術4 )等 的干擾計者。 在特開平5 — 1 7 9 4 6 7號公報（習知技術1 )中 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 、π 經濟部智慧財產局員工消費合作社印製 -4- 559941 A7 B7 五、發明説明（2) (請先閲讀背面之注意事項再填寫本頁) ’使用紅、綠、藍的三種濾色片，檢測干擾光（電漿光） ’進行蝕刻的終點檢測者；在特開平8 - 2 7 4 0 8 2號 公報（U S F 5 6 5 8 4 1 8 )(習知技術2 )中，使用 兩種波長的干擾波形的時間變化與其微分波形，來計數干 擾波形的極値（波形的最大、最小··微分波形的零通過點 )。藉計測計數達到所定値的時間來算出蝕刻速度，而依 據算出的蝕刻速度來求出達到所定膜厚的剩餘蝕刻時間。 而依據該時間進行停止蝕刻處理。在特開2 0 0 0 - 9 7 6 4 8號公報（習知技術3 )中，求出處理前的干擾光的 光強度圖案（將波長作爲參數）與處理後或處理中的干擾 光的光強度圖案的相差的波形（將波長作爲參數），藉由 該差波形與資料庫化的差波形的比較來測定段差（膜厚） 。特開2 0 0 0 — 1 0 6 3 5 6號公報（習知技術4 )是 關於一種旋轉塗布裝置，測定多波長有關的干擾光的時間 變化，來求出膜厚。 經濟部智慧財產局員工消費合作社印製 檢測蝕刻的終點而欲停止處理時，實際上，膜層的剩 餘厚度儘量接近或相等於所定値爲極重要。在習知的技術 ’依據各該層的蝕刻速度爲一定的前提來調整時間以利監 視上述膜厚。成爲該基準的蝕刻速度値，是例如處理作爲 樣品的晶圓而事先求出。在該技術，若經過對應於所定膜 厚的時間，則停止蝕刻處理。 但是，眾知實際的膜，例如藉由L P C V D ( low pressure chemical vapor deposition)方法所形成的 S i 〇 2 層，是厚度的再現性低（所形成的層的厚度的偏差較大） 本紙張尺度適财關家鮮（CNS ) A4· ( 210X297公釐) -5- 559941 A7 B7 五、發明説明（3) (請先閲讀背面之注意事項再填寫本頁) 。依L P CVD中的處理變動的厚度的容許誤差，是例如 相當於S i〇2層的初期厚的大約1 〇 %。因此，在依據上 述習知技術的時間的調整，無法正確地測定出留在矽基板 上的S i〇2層的實際最終厚度。 又，在上述習知技術，未考慮到以下之諸處。（1 ) 進行使用掩蔽材（例如光阻、氮化膜、氧化膜）的蝕刻， 則來自掩蔽材的干擾光重疊在被蝕刻的材料的干擾光。欲 從干擾光僅檢測被處理材的蝕刻狀態，必須儘量除去來自 掩蔽材的干擾光的影響。 (2 )又，在經過程處理的被處理材的材料（例如矽 或絕緣膜或設在其上面的掩蔽材）的蝕刻處理，由於掩蔽 材也與矽或絕緣膜一起被蝕刻，而不僅來自被處理材的干 擾光還有來自掩蔽材的干擾光也變動，因此欲從依掩蔽的 鈾刻所產生的影響僅檢測被處理材的蝕刻量（蝕刻深度） ，必須考慮來自上述掩蔽材的干擾光的變化進行檢測，惟 在習知技術並未被考慮。 經濟部智慧財產局員工消費合作社印製 (3 )量產過程的加工用晶圓，是起因於元件構造而 使得掩蔽材的初期厚度或被掩蔽材的初期厚度在晶圓面內 具有不同分布之故，因而對於成爲處理對象的一種類膜層 重疊有來自不同膜厚者的干擾光。對於減低此些的影響， 在習知技術並未充分地考慮。 由以上理由，以高精度檢測被處理材的層（成爲半導 體過程處理的對象的膜的層），特別是在電漿蝕刻處理的 被處理層的蝕刻深度或留下的膜厚，而欲調整蝕刻的狀態 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) -6- 559941 A7 ___B7_ 五、發明説明（4) 很難，而以高精度處理半導體（晶圓）。 (請先閲讀背面之注意事項再填寫本頁) (發明之槪要） 本發明的目的，是在於提供一種以高精度可處理晶圓 上的半導體的半導體製造裝置。 本發明的其他的目的，是在於提供一種使用電漿蝕刻 進行半導體的處理，以高精度可檢測被處理層的蝕刻深度 或殘留膜厚等鈾刻的狀態的半導體處理的終點判定方法。 上述的目的是由一種半導體製造裝置，屬於將配置於 容器內而在其表面具有複數層膜的半導體晶圓，使用發生 在該容器內的電漿施以蝕刻處理的半導體製造裝置，其特 徵爲具備：顯示來自在上述處理的所定期間內所得到的上 述晶圓表面的複數波長的光變化的顯示手段，及依據該顯 示的變化量來判定上述蝕刻處理的狀態的功能所達成。 又，由一種半導體製造裝置，屬於將配置於容器內而 在其表面具有複數層膜的半導體晶圓，使用發生在該容器 內的電漿施以蝕刻處理的半導體製造裝置，其特徵爲具備 經濟部智慧財產局員工消費合作社印製 在上述處理的所定期間測定來自上述晶圓表面的光的 測定手段，及顯示有關於從該測定手段所檢測的上述所定 期間的上述光的變化的資料的顯示手段，及使用上述資料 來演算上述蝕刻處理的狀態的演算手段，及依據該演算手 段的演算結果來調整上述蝕刻處理的控制器所達成。 又，由一種半導體製造裝置，其特徵爲：在其表面具 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 559941 A7 B7 ___ 五、發明説明（5) (請先閲讀背面之注意事項再填寫本頁) 有複數層的膜而檢測來自藉由所發生的電漿被處理的半導 體晶圓表面的光干擾的計測器，及顯示在上述處理的所定 期間所得到的上述光干擾的變化的顯示手段，及使用上述 光干擾的變化隨著表示特定値以上的上述光波長的時間的 變化，判定上述處理的速度並予以顯示所達成。 又，上述目的是由一種終點判定方法，其特徵爲：發 生電漿，在處理於其表面具有複數層膜的半導體晶圓的期 間，測定來自該半導體晶圓表面的光的干擾，從該測定的 光的干擾變化成爲所定値以上的上述光的波長的時間變化 ，來判定上述半導體晶圓的上述膜中的一個膜厚所達成。 又，由一種終點判定方法，其特徵爲：發生電漿，在 處理於其表面具有複數層膜的半導體晶圓的期間，檢測來 自該半導體晶圓表面的光的干擾變化，對於複數的半導體 晶圓重疊所檢測的光的干擾變化的資料，而從該重疊的資 料所得到的光的干擾變化成爲所定値以上的上述光的波長 的時間變化，來判定上述半導體晶圓的上述膜中的一個膜 厚所達成。 經濟部智慧財產局員工消費合作社印製 (發明之實施形態） 以下使用本案發明的實施例。 又，在以下各實施例中，具有與第一實施例同樣功能 者是賦於與第一實施例相同記號而省略其詳細說明。在以 下的實施例，作爲依本發明的半導體元件製造過程的終點 判定方法，說明測定被處理材的蝕刻過程的鈾刻量（蝕亥ij 本紙張i適用中國國家標準（CNS ) A4規格（210X297公嫠） -8- 559941 A7 __ _B7 五、發明説明（6) (請先閲讀背面之注意事項再填寫本頁) 深度及膜厚）的方法。但是，本發明是並不被限定於此， 也可適用在測定電漿C V D，測鍍等成膜處理的成膜量（ 成膜厚度）等方法。 以下，在第1圖至第4圖說明本發明的第一實施例。 第1圖是表示使用本案發明的半導體製造裝置的第一實施 例的構成的槪略縱剖視與方塊的圖式。第2圖是表示用以 檢測第一實施例的蝕刻的狀態的光干擾的模式圖。第3圖 是表示在第一實施例使用光干擾所得到的資料的例的圖表 。第4圖是表示使用第3圖的資料藉由第一實施例的顯示 手段所表示的蝕刻的狀態的例的圖式。 經濟部智慧財產局員工消費合作社印製 在該實施例中，電漿蝕刻半導體晶圓等被處理材之際 ，分別設定表示干擾光的資料或其微分値對於樣品用的被 處理材（樣品用晶圓）與具有該處理材的掩蔽材的各蝕刻 量的波長依存性（將波長作爲參數）的標準圖案P S與 P Μ。然後，分別測定對於樣品用被處理材與實際的被處 理材（實際的晶圓）的實際處理的干擾光的複數波長的強 度，求出表示該測定的干擾光強度的資料或該微分値的資 料的波長依存性（將波長作爲參數）的實圖案，比較微分 値的標準圖案與實圖案後，求出實際的被處理材的蝕刻量 (過程的終點）。 第1圖是表示將本發明適用於具磁場U H F帶電磁波 放射放電方式的電漿蝕刻裝置的實施例者，爲該電漿蝕刻 裝置的縱剖面的橫式圖。 在第1圖中，處理室1 0 0是可達成1 0至6 本^張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -9- 559941 A7 _______B7 五、發明説明（7) (請先閱讀背面之注意事項再填寫本頁) τ 0 r r左右的真空度的真空容器，在其上部具備放射作 爲電漿發生手段的電磁波的天線1 1 〇，而在其下部具備 載置晶圓等的樣品W的下部電極1 3 0。天線1 1 0與下 部電極1 3 0是以平行而對向的形態被設置。在處理室 1 0 0的周圍’設有例如電磁線圏與軛所構成的磁場形成 手段1 0 1 ’形成有所定分布與具強度的磁場。藉由從天 線1 1 0所放射的電磁波與以磁場形成手段1 〇 1所形成 的磁場的互相作用，電漿化被導入在處理室內部的處理氣 體，發生電漿P，處理下部電極1 3 0上的樣品w。 處理室1 0 0是藉由連接於真空室1 0 3的真空排氣 系統1 0 4與壓力控制手段1 0 5進行真空排氣與壓力調 整，使得內部壓力可控制在例如0 . 5 P a以上4 P a以 下左右的所定値。處理室1 0 0及真空室1 0 3是成爲接 地電位。處理室1 0 0的側壁1 0 3是藉由未圖示的溫度 控制手段，被溫度調整在例如5 0 °C左右。 經濟部智慧財產局員工消費合作社印製 放射電磁波的天線1 1 0是由圓板狀導電體1 1 1， 介質1 1 2，介質環1 1 3所構成，被保持在作爲真空容 器的一部分的器殼1 1 4。又，在接近圓板狀導電體 1 1 1的電漿的一邊的面，設有板1 1 5。進行樣品的蝕 刻，成膜等的處理的處理氣體，是從氣體供給手段1 1 6 具有所定流量與混合比被供應，在圓板狀導電體1 1 1的 內部被均勻化，通過設有板1 1 5的多數孔而被供至處理 室1 0 0。圓板狀導電體1 1 1是藉由未圖示的溫度控制 手段。被溫度調整成例如3 0 °C。在天線1 1 0 ’經由導 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10- 559941 A7 ___ B7__ 五、發明説明（8) 入端子1 2 6連接有天線電源1 2 1，天線偏壓電源 123及匹配電路，濾波器系統122，124，125 (請先閲讀背面之注意事項再填寫本頁) 所構成的天線電源系統1 2 0。天線電源1 2 1是較理想 是供應3 Ο ΟΜΗζ至9 0 1MHz的UHF頻帶的電力 ’而從天線1 1 0放射U H F頻帶的電磁波。 經濟部智慧財產局員工消費合作社印製 天線偏壓電源1 2 3是將例如1 〇 〇 Κ Η ζ左右或數 ΜΗ ζ至1 〇μΗ ζ左右的頻率的偏壓經由圓板狀導電體 1 1 1施加於板1 1 5，俾控制板1 1 5表面的反應，特 別是，在使用C F系氣體的氧化膜蝕刻，將板1 1 5的材 質作爲高純度的矽或碳等，俾控制板i 1 5的表面的F基 或C F X基的反應，可調整基的組成比。在本實施例中， 在板1 1 5使用高純度矽。又在圓板狀導電體1 1 1及器 殻使用鋁，而在介質1 1 2及介質環1 1 3使用石英。板 1 1 5的下面與晶圓W的距離（以下，稱爲間隙）是3 〇 mm以上1 5 Omm以下，較理想爲5 〇mm以上1 2 0 m m以下。在本實施例，天線電源1 2 1是4 5 0 Μ Η ζ ’天線偏壓電源1 2 2是1 3 . 5 6 Μ Η ζ頻率，而間隙 是設定在7 Omm。 在處理室1 0 0的下部，對向於天線1 1 〇設有下部 電極1 3 0。下部電極1 3 0是藉由晶圓等樣品載置面載 置保持晶圓等的樣品W。在樣品w的外周部，例如以高純 度砂所形成的樣品台環1 3 2設在絕緣體1 3 3上面。在 下部電極1 3 0經由匹配電路，濾波系統1 3 5連接有供 給較理想爲4 0 0 k Η ζ至1 3 · 5 6 Μ Η ζ範圍的偏壓 本紙張尺度適用中國國家標準（CNS ) Μ規格（21〇Χ297公釐） -11 - 559941 A7 __ B7 五、發明説明（9) 電力的偏壓電源1 3 4，俾控制施加於樣品W的偏壓。在 本實施例中，偏壓電源1 3 4是將頻率作爲8 0 0 kH z (請先閲讀背面之注意事項再填寫本頁) 〇 以下，說明爲了計測樣品w的表面狀態所設置的計測 口 1 4 0。在本實施例中，計測口 1 4 0是安裝於對向在 樣品W的的天線1 1 〇，如下述地，經形成在板1 1 5的 多數貫通孔，從垂直上方可計測樣品W的表面薄膜等的狀 態。又，藉由將其他計測口 1 4 0設在計測樣品W的外周 部的位置或樣品W的外周與中心的中間位置，可得到有關 於樣品W的表面面內分布的資訊。當然，計測口的安裝是 並不被限定於如上所述的外周部與中間部的兩部位等者， 作成一部位或三部位也可以，或當然也可以例如排列在圓 周上等其他配置。 經濟部智慧財產局員工消費合作社印製 在上述計測口 1 4 0，分別設有例如光纖或透鏡等光 學傳送手段1 5 1，而反映來自電漿P的直接光或電漿P 的晶圓W表面的反射光或干擾光等的晶圓W的表面狀態的 光學資訊，被傳送至例如攝影機或干擾薄膜計或晝像處理 裝置等所構成的計測器1 5 2並被計測。計測器1 5 2是 藉由計測器控制，演算手段1 5 3被控制，同時與上位系 統控制手段1 5 4相連接。系統控制手段1 5 4是經由控 制介面1 5 5，進行遙控或調整裝置或包含裝置的系統狀 態的控制用的控制器。上述演算手段1 5 3是可能爲複數 記憶用晶片或微處理器所構成的電子電路，或構成在單晶 片微電腦等一個晶片中的電子電路。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -12- 559941 Α7 Β7 五、發明説明（β (請先閲讀背面之注意事項再填寫本頁) 依本實施例的電漿飽刻裝置是如上述地構成’使用該 電漿蝕刻裝置，進行例如矽氧化膜的蝕刻情形的具體過程 是如下所述。 首先，處理對象物的晶圓w，是從未圖示的樣品搬入 機構被搬進處理室1 0 〇之後’被載置’吸附在下部電極 1 3 0上面，視需要下部電極的高度被調整並被設定在所 定間隙。然後，處理室1 〇 〇內是藉由真空排氣系統 1 0 6被真空排氣，另一方面，樣品W的蝕刻處理所需的 氣體，例如C 4 F 8與A r與0 2，由氣體供給手段1 1 6 ，以所定流量與混合比’例如以A I* 4 0 0 s c c m。 經濟部智慧財產局員工消費合作社印製 C 4 F 8 15sccm，〇2 5sccm，從天線 110 的板1 1 5被供應至處理室1 〇〇。同時地，處理室 1 0 0的內部被調整成例如2 P a的所定處理壓力。另一 方面，藉由磁場形成手段1 0 1，相當於對應於天線電源 1 2 1的頻率4 5 0 Μ Η z的電子迴旋加速器諧振磁場強 度的槪略1 6 0高斯的大約水平磁場形成在板1 1 5的下 方附近。如此，藉由天線電源1 2 1從天線1 1 〇放射 U H F頻帶的電磁波，而藉由與磁場的互相作用在處理室 1 0 0內生成電漿Ρ。藉由該電漿Ρ，離解處理氣體俾發 生離子基，又控制天線高頻電源1 2 3及偏壓電源1 3 4 ，而在晶圓W進行蝕刻等處理。 各電源的投入電力是例如天線電源1 2 1爲1 〇 〇 〇 W，天線高頻電源1 2 3爲3 0 0 W，偏壓電源1 4 1爲 8 0 0 W左右。又，隨著鈾刻處理的終了，則停止電力及 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -13- 559941 A7 B7 五、發明説明（y 處理氣體的供給而終了鈾刻。 (請先閱讀背面之注意事項再填寫本頁) 反映該處理中的電漿發光或晶圓表面狀態的光學資訊 ’經計測口 1 4 0等，藉由光學傳送手段1 5 1等被傳送 而在計測器1 5 2被計測，在計測器控制，演算手段 1 5 3依據計測結果進行演算處理，之後被傳送至上位系 統控制手段1 5 4，而經由控制介面1 5 5，電漿處理裝 置系統被控制。 亦即，來自包含蝕刻量（例如，蝕刻深度及膜厚）的 分光器的計測器1 5 2所具有測定用光源（例如鹵素光源 )的多波長的放射光，藉由光學傳送手段1 5 1被導至真 空室1 0 3內，以大約垂直的入射角碰上被處理材。 經濟部智慧財產局員工消費合作社印製 如第2圖所示地，在本實施例中被處理材W是具有作 爲掩蔽材的有機化合物的光阻4 4，及作爲被處理構件的 B A R C ( Back Antj-Reflection coating :有機材料的反射 防止）膜4 3及氮化矽膜4 2及氧化矽膜4 1迭層在基板 的矽4 0上面的構造。在真空室1 0 3內所放射的光，是 藉由在被處理構件表面所反射的放射光9 A，9B與藉由 掩蔽材所反射的放射光1 0 A，1 0 B形成有干擾光。亦 即，被導至無掩蔽材4 1經蝕刻處理的部分的放射光9， 是藉由在BARK材4 3上面所反射的放射光9A，及來 自基板矽4 0與氧化膜4 1的表面的反射的放射光9 B形 成有干擾光。被導至掩蔽材4 1的放射光1 0，是藉由在 掩蔽材4 1的上面所反射的放射光1 0 A，及在形成於掩 蔽材4 1與BARK材4 3之間的境界面所反射的放射光 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14- 559941 A7 B7 五、發明説明（y 1 〇B形成有干擾光。 (請先閲讀背面之注意事項再填寫本頁) 此些千擾光是依掩蔽材及被處理材的段差，亦即，依 掩蔽材4 4的厚度5 1與被處理材的切削（在本圖中爲 B A R c部的触刻星5 0 7的干擾成分。此些干擾光是經 由計測口 1 4 0，光傳送手段1 5 2被導至計測器1 5 2 的分光器，而依據來自分光器的輸出信號在計測器控制， 演算手段1 5 3進行被處理材的鈾刻量及掩蔽材的膜厚或 過程（在此爲蝕刻）的終點的判定處理。 計測器1 5 2是具有分光器，又計測器控制，演算手 段1 5 3是具備：接收從計測器所輸出的資料的信號而在 此些進行所定處理的第一數位濾波電路，微分器，第二數 位濾波電路；又具備記憶將膜厚或所謂鈾刻的終點的蝕刻 狀態使用於判定的微分波形圖案的資料庫的記憶手段，微 分波形比較器，依據此些比較器的結果來演算蝕刻終點並 進行判定的演算器，及用以將上述資料信號或處理後的資 料，判定結果顯示於使用者的顯示手段1 5 6。 經濟部智慧財產局員工消費合作社印製 顯示手段1 5 6是有使用液晶或C R T的顯示器，或 將達到所定膜厚或終點的情形以光，聲音等報警的報警手 段，或組合此些等。在本實施例，具備將計測資料顯示作 爲圖表的顯示器，及具有以光，聲音報警的手段的顯示手 段 1 5 6。 又，第1圖是表示蝕刻量的測定裝置的功能性構成者 ，顯示手段1 5 6與除掉分光器的計測器1 5 2的實際構 成是可藉由C P U，或保持蝕刻深度及膜厚測定處理程式 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -15- 559941 A7 ______B7 五、發明説明（j (請先閱讀背面之注意事項再填寫本頁) 或干擾光的微分波形圖案資料庫等的各種資料的R〇Μ或 測定資料保持用的R A Μ及外部記憶裝置等所構成的記憶 裝置等所構成的記憶裝置，資料的輸出入裝置，及通信控 制裝置所構成。此爲對於以下所說明的其他實施例也同樣 〇 說明依據本實施例的計測器1 5 2，計測器控制，演 算手段1 5 3的真空室1 0 3內的發光的理槪要。圍上表 示於第1圖的計測器1 5 2的被處理材及關於掩蔽的多波 長的發光強度，是作爲時系列信號的資料施以平滑化處理 ，而作爲平滑化微分常數時系列資料被收納在R A Μ等的 記憶裝置。又，由該平滑化微分常數系列資料求出表示干 擾光強度的微分値的波長依存性（將波長作爲參數）的實 圖案。 經濟部智慧財產局員工消費合作社印製 另一方面，作爲微分波形圖案的資料庫，事先設定對 於對應於成爲測定對象的被處理材及掩蔽材的段差的波長 頻帶的干擾光強度的微分波形圖案資料値。該結果的微分 波形圖案藉由顯示器1 5 6顯示有被處理材的蝕刻狀態的 貪虫刻量。 又，欲廣泛地測定被處理材的面內並加以控制等，也 可以設置複數分光器。 第2圖是表示蝕刻處理途中的被處理材的縱斷面形狀 ;又將被處理對象的晶圓W在處理中所得到的干擾光的波 長實圖案的例表示於第3圖。在第2圖中，被處理材（晶 圓），是在矽基板40上迭層有掩蔽材41。在該蝕刻處 本紙張尺度適元中國國家標準（CNS ) Α4規格（210X297公釐） -16- 559941 A7 B7 五、發明説明（u 理中，矽基板爲被蝕刻材料，此些加熱處理是被稱爲例如 用以進行元件分離的S T I ( Shallow Trench Isolation)鈾 (請先閲讀背面之注意事項再填寫本頁) 在第3圖中，橫軸表示鈾刻時間，而縱軸表示所定範 圍的波長；以色濃淡表示各時間的任意波長的光強度。如 該圖所示，依干擾光的波長大小，隨著蝕刻處理時間的變 化使其強度變化的圖案有變化。長波長領域（第2波長頻 帶：例如7 0 0 n m )的干擾光資料的微分波形，是隨著 蝕刻處理的時間變化使其大小變化的周期較大，相對地緩 慢地變化。另一方面，短波長領域（第1波長頻帶：例如 3 0 0 nm)的干擾光的生波形是與周期較長的長波長波 相比較，成爲周期短的變化。 經濟部智慧財產局員工消費合作社印製 又，由該圖可知，藉由處理本實施例的真空室1 〇 3 內的發光變化，使得依掩蔽材的蝕刻的干擾成分的變化及 依被處理材與掩蔽材的段差的干擾成分的變化更明確。此 乃由於被蝕刻的材料的折射率（例如，矽與掩蔽材的氮化 膜的折射率及溝部分的真空折射率）對於波長形成不同所 引起。 又，隨著蝕刻時間之經過，可知被微分的干擾光的變 化的圖案被分成三個領域。亦即，在第3圖中，分別爲 B A R C材的鈾刻，氮化矽（S i N )的蝕刻，氧化膜（ S i〇2 )的鈾刻的干擾光。又，在各範圍中，可知表示資 料値大小的色濃領域，在波長及時間的座標平面（維度） 上具有特定的圖案。亦即，具有所定大小以上的範圍，或 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17- 559941 A7 B7 五、發明説明（^ (請先閲讀背面之注意事項再填寫本頁) 所定大小以下的範圍的數値的資料，在該座標平面上，條 紋狀交互地排列，交互地排列有値較大的a頂"領域與> 谷〃領域。此些”山脊〃或 > 谷〃，是表示隨著干擾光在 特定値以上，或以下大小變化的波長時間的變化。又，可 知該條紋的''山脊"領域，是在途中具有該値變小的部分 ，具有可看出該 > 山脊〃被分斷的特徵。 依照發明人等的檢討，此些圖案是重疊依被處理材及 掩蔽材的蝕刻的干擾光所形成者，”山脊"％谷"的圖案 是表示依被處理材的蝕刻的干擾光的強度；可知分斷上述 ''山脊〃的値的較小領域是依掩蔽材的蝕刻的干擾光重疊 在依被處理材的蝕刻的干擾光的結果所產生者。 經濟部智慧財產局員工消費合作社印製 亦即，來自上述的a山脊〃 > 谷〃等的圖案是對應的 被處理材隨著時間經過施以蝕刻有變化的晶圓表面的發光 (反射光）藉由干擾所得到，圖案是反映蝕刻的進行或狀 態與其變化。使用此些資料的圖案的特徵就可知被處理材 的蝕刻狀態（殘留膜的厚度或終點的到達），而成爲可判 定掩蔽材的蝕刻狀態。又，如第3圖所示地，在處理具有 複數膜所迭層的構造的半導體晶圓者，出現各層的上述特 徵的變化，可將蝕刻對於時間經過的進行成爲明確，而可 檢測隨著該進行的蝕刻狀態的變化。本發明是依據此種發 明人等的見識與檢討者。 使用第4圖說明本實施例的上述干擾光的資料的顯示 例。第4圖是表示使用第3圖的資料藉由第一實施例的顯 示手段所表示的蝕刻狀態的例的圖式。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -18- 559941 A7 B7 五、發明説明（θ (請先閱讀背面之注意事項再填寫本頁) 在該圖中，如上所述地，干擾光的微分資料，在橫軸 表示蝕刻時間，而在縱軸表示干擾光的波長。使用該顯示 的資料，就可知識如下事項。從隨著上述資料上的時間經 過的圖案變化，分成對應於被蝕刻的各材料的複數領域， 而從各該領域的時間長度可知各材料層的蝕刻所需時間。 若事先正確地知道此些膜的層厚，則從該時間可知蝕刻速 度（比率）。 在各領域中，找出連結選擇特定的''山脊"並重疊於 其上面的的特定値的座標〔在本實施例中爲（a，b )， (c，d ) ，（ e，f )的連結線。重疊於該線的''山脊 "是表示對應的被處理材（BARK，SiN，Si〇2) 的蝕刻隨著時間的變化而如何地進行。若知道被處理材的 折射率等，則由對應於上述'山脊〃的線，可檢測該處理 材的蝕刻速度（比率）。 經濟部智慧財產局員工消費合作社印製 使用從該干擾光的微分資料的圖案所檢測的蝕刻速度 ，則可更高精度地判斷，判定所謂蝕刻中的膜厚或終點判 定的蝕刻狀態。又，如上述地可檢測對應於各被處理材的 領域的蝕刻時間（可知蝕刻各膜所需時間）之故，因而也 可用高精度地檢測各材料的膜厚。在此些檢測或判定，使 用起因於被處理材的蝕刻的干擾光變化的特徵，藉由重疊 依掩蔽材的蝕刻的干擾光與依被處理材的蝕刻的干擾光所 產生的影響是大幅度地減低，而使誤檢測被抑制成極低。 又，上述所得到的蝕刻狀態的資料，是以數値，圖表 等顯示於圖表顯示器等的顯示手段1 5 6上。又，此些資 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -19- 559941 A7 B7 五、發明説明（θ (請先閲讀背面之注意事項再填寫本頁) 料是另外地被記憶在記憶裝置也可以。由此，使用者是可 知干擾光的波形的微分資料會時間變化的情形，同時也可 知藉由裝置所判定的蝕刻狀態，殘留膜厚，或蝕刻速度等 ，可提供使用者調整裝置的運轉之際的有用資訊，也可提 高裝置運用的效率。 又，此些干擾光的微分波形圖案，是被處理材的每一 狀態成爲特有圖案。若被處理材的材料不相同時，則此些 圖案也會變化之故，因而對於處理上所需要的各種材料及 蝕刻深度的範圍，藉由實驗等事先求出資料，將微分波形 圖案作爲標準圖案並保持在記錄裝置較理想。此些記憶裝 置是具備在上述計測器控制，演算手段1 5 3內也可以， 或具備作爲被連接於電纜的外部記憶裝置也可以。 以下說明使用上述干擾光的微分波形的圖案而以更高 精度判定蝕刻狀態的本發明的其他實施例。 經濟部智慧財產局員工消費合作社印製 在上述第一實施例，是在處理成爲處理對象的晶圓之 前，事先進行成爲樣品的晶圓的蝕刻處理，並將此時所得 到的蝕刻速度或膜厚，作爲其後所處理的實處理晶圓的基 準資料。此種資料是將處理樣品的晶圓與進行實處理的晶 圓的蝕刻條件僅在被視爲大約相同的所定差的範圍作爲前 提被使用。 在習知技術中，每當此種蝕刻條件的規格不同，處理 用以測定此種資料的樣品的晶圓。爲此，例如在蝕刻氣體 的規格在每一批不相同時，而在每一次此種規格有變化時 進行樣品晶圓的處理成爲取得資料，該分量的時間成爲需 本紙張尺度適财關家標準（CNS ) A4規格（210X297公釐) _ -20- 559941 A7 B7 五、發明説明（^ (請先閲讀背面之注意事項再填寫本頁) 要。亦即，在此種習知技術中，爲了快速地對應於使用者 的需求，將晶圓以很多不同條件每次小量地處理的運轉， 在少批中以不同處理的條件而包含須處理的晶圓時，會損 失處理的效率。 又，在處理樣品的晶圓包含特殊現象者時，成爲將包 含依該現象的影響的資料使用作爲基準資料之故，因而在 依據該資料的實晶圓的處理，會以不適用的實際者之條件 加以處理，而被處理的半導體裝置是未結滿足所期望的規 格，有產生降低良品率的缺點問題之虞。 如此，在本實施例中，使用不同蝕刻氣體的規格等蝕 刻條件不同的複數處理資料，取得成爲基準的資料。 經濟部智慧財產局員工消費合作社印製 第5圖是表示上下並排進行蝕刻條件不同的複數處理 時所得到的干擾光的微分波形的資料的圖表。鈾刻條件不 同之故，因而在每一各條件，干擾光的微分波形的資料是 圖案不同。特別是，較大値與較小値的領域的分布或處理 時間不同。而表示蝕刻速度不同。第6圖是表示對於此種 不同條件的複數資料，使用特定參數，整理此些資料的圖 案時的干擾光的微分波形的圖案。 在該第6圖中，作爲特定的參數，使用將表示於右邊 的微分波形的資料加以主成分解析所得到的特定成分，在 本實施例使用第2主成分。如第5圖所示地，從複數不同 的蝕刻條件的波形資料所得到的第2成分的峰値（最小値 )的位置，是分別在不同位置。上述微分波形資料的第1 主成分所表示的量，是相當於電漿發光情形的多波長干擾 本紙張尺度適用中關家標準（CNS ) A4規格（2似297公着） -- -21 - 559941 A7 B7 五、發明説明（^ (請先閱讀背面之注意事項再填寫本頁) 光的平均性固有光譜的性質。另一方面，第2主成分所表 示的量，是表現從第1主成分的差距，表示依電漿發光的 干擾光從平均性量如何地變動的量。最小値是指微分該成 分的値通過零點的數値。 依照發明人等的檢討，如表示於第6圖的圖表，可知 在表示於左邊的列的箭號表示上述第2主成分的波形峰値 (最小値）的位置，能成分別大約相同位置地，在伸縮橫 軸的蝕刻時間的長度範圍成爲一致時，對應的右邊的列的 微分圖案在特定範圍成爲大約相似形狀。尤其是可知較大 値領域與較小値領域的分布成爲大約相似形狀。 如此地使用在圖案一致的複數鈾刻條件下所求得的資 料：可以用高精度檢測的蝕刻狀態。例如使用如上述地重 疊具有大約相似形狀的圖案的複數資料加以平均的數値， 就可抑制依特殊現象，條件的資料圖案的影響，可進行更 ®精度的判定。 經濟部智慧財產局員工消費合作社印製 又，在重疊之際，事先決定成爲基準的橫軸（時間） 與縱軸（波長）的座標組合，變換成作爲該基準的時間-波長的座標位置的數値加以數値。例如在擴大成爲基準的 座標的橫軸的時間間隔而將圖案成爲一致（將第2主成分 的最小値的位置成爲一致）時，必須求出原來擴大前的座 標點的中間點的資料。該資料是使用內插原來座標點的資 料所求得的資料。在此種情形，可使用周知的數學上資料 的內插方法。 以下，使用第7圖及第8圖說明判定本實施例的半導 本紙張尺度適用中國國家標準（CNS ) Μ規格（210X297公釐） -22- 559941 A7 B7 五、發明説明（^ (請先閲讀背面之注意事項再填寫本頁) 體製造裝置的上述蝕刻等狀態所進行的處理動作的流程。 第7圖是表示說明判定圖示於第1圖的半導體製造裝置的 蝕刻狀態所進行的處理動作的流程的流程圖。第8圖是表 示圖示於第7圖的B部分的動作流程的流程圖。 在第7圖所示的例子，是表示進行晶圓的處理（在本 實施例爲鈾刻）者，將成爲樣品的晶圓進行蝕刻處理俾取 得資料，而從該取得資料取得蝕刻速度等的所定蝕刻狀態 的資料之後，進行實處理晶圓的處理的流程。 在第7圖的實施例的半導體製造裝置中，在步驟 7 0 1中，進行晶圓的處理之前的初期設定。作爲該初期 的設定，有儲存樣品晶圓的資料的資料庫名稱或所處理的 晶圓的識別名稱，判定殘留膜厚的步驟號碼，作爲目標的 殘留膜厚的數値，或使用於終點判定的基準値等。在該步 驟後開始晶圓的處理（步驟7 0 2 )。 經濟部智慧財產局員工消費合作社印製 在步驟7 0 3中，確認開始晶圓處理時，則開始處理 中的資料的抽樣。之後在步驟7 0 4，以圖示於第1圖的 受光手段1 4 0受光來自晶圓表面的反射光的真空容器 1 0 0內的發光，經由光纖等光傳送手段1 5 1藉由具有 分光器的計測器1 5 2，及授受此與信號的計測器控制， 演算手段1 5 3，取得干擾光的資料。 更具體而言，該步驟的資料爲，從光傳送手段1 5 2 給與分光器的容器1 〇 〇內的光，是作爲對於多波長的時 系列的信號被輸出，在計測器控制，演算手段1 5 3使用 數位濾波器等被平滑化處理。該平滑化處理的資料，使用 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -23- 經濟部智慧財產局員工消費合作社印製 559941 A7 ______B7 _ _ 五、發明説明（2) 周知方法（S-G等）算出微係數，藉由數位濾波器再被 平滑化。如此，在複數波長的干涉波形的微分資料，是求 得作爲時間-波長座標的資料。比較如此所得到的資料， 及作爲基準的資料，如下述地，算出晶圓上的膜所殘留厚 度的數値。 然後，在步驟7 0 6中，判斷是否判定殘留膜厚，若 判斷爲未判定時，則移至步驟7 0 7，判斷是否終了現在 處理中的晶圓的資料抽樣。在步驟7 0 6判斷爲判定殘留 膜厚時’則在步驟7 0 7判斷是否判斷對象的膜的殘留厚 度成爲判斷基準的所定値以下，若比所定値大時，則回到 步驟7 0 4繼續晶圓的處理與資料抽樣。若判斷爲比所定 値小時，在步驟7 0 9，終了資料抽樣與進行此時所必需 的設定。 之後，在步驟7 1 0判斷是否處理所取得的資料。在 此若判斷爲不需要處理則移至步驟7 1 4，判斷晶圓處理 的終了。這時候，所取得的資料是可事後處理地記憶在硬 體等記憶手段也可以。 若判斷爲進行資料處理時，在表示於步驟7 1 1的B 中’資料被處理。在此所進行的處理是使用第8圖詳細說 明。使用在B所處理的資料，在步驟7 1 2算出蝕刻條件 。ό己丨思並S錄所算出的触刻條件之後’終了資料處理，判 斷是否終了晶圓處理（步驟7 1 3，7 1 4 )，在判斷爲 終了處理時，則進行所定晶圓處理終了的動作（步驟 7 15)，繼續樣品的晶圓處理，蝕刻處理實處理晶圓等 本&張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） " ' •24- (請先閲讀背面之注意事項再填寫本頁) 訂 559941 A7 B7_ 五、發明説明（j ，而在判斷爲繼續進行處理時，回至步驟7 0 2。 (請先閱讀背面之注意事項再填寫本頁) 使用第8圖，詳述第7圖的處理B。在步驟801中 ，判斷是否可進行資料的處理。例如選擇開始放電時或除 電順序等，除了容器內的光信號過渡性變化的時間的範圍 。對於該選擇的可資料處理的範圍，進行上述平滑化時系 列資料的主成分解析（步驟8 0 2 )。 在步驟8 0 3，算出有關於該主成分解析的結果所得 到的主成分的固有光譜的得分（SCORE)，而在步驟 8 0 4，藉由該得分的時間變化的微分處理等，算出成爲 第2主成分的最小値（極値）的時刻。在該微分處理，使 用S - G法等周知方法。 對於成爲在步驟8 0 4所得到的極値的時刻，判斷是 否進行重疊在其他蝕刻條件的晶圓處理所得到的時間-波 長的微分波形資料的處理（步驟8 0 5 )，在被處理時， 重疊而將圖案成爲一致之故，因而使得成爲第2主成分的 極値的時刻成爲相同地對準時間刻度（步驟8 0 6 )。 經濟部智慧財產局員工消費合作社印^ 然後，在步驟8 0 7，爲了重疊，使用周知內插方法 算出所定座標（時刻-波長）的數値，而在步驟8 0 8， 使用所算出的資料，進行重疊並求出平均的處理。使用如 此所得到的資料所算出的蝕刻狀態的資料，是將樣品抑制 依據包含於處理中的特殊現象的資料的影響成較低，而以 高精度可求出蝕刻速度或時間。 又’可使用在習知技術未能進行而在複數蝕刻條件下 的晶圓處理所得到資料的圖案每一個的特定範圍（時間一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）" -25- 559941 A7 B7 五、發明説明（ (請先閲讀背面之注意事項再填寫本頁) 波長）的圖案的資料，可提高晶圓處理的效率，同時使用 實處理晶圓的判定的資料具有高精度。由此，即使頻繁地 變化晶圓的材質或蝕刻氣體條件的規格時，也可用更高效 率，更高良品率進行半導體製造裝置的處理。 (圖式之簡單說明） 第1圖是將本發明的半導體製造裝置的第一實施例的 構成的槪略使用縱斷面與方塊所表示的圖式。 第2圖是表示用以檢測第一實施例的蝕刻狀態的光的 干擾的模式圖；表示蝕刻處理途中的被處理材的縱斷面形 狀的圖式。 第3圖是表示在第一實施例使用光干擾所得到的資料 的例的圖表。 第4圖是表示使用第3圖的資料而藉由第一實施例的 顯示手段所表示的蝕刻狀態的例的圖式。 第5圖是表示上下地排列進行蝕刻條件不同的複數處 理時所得到的干擾光的微分波形的圖式。 經濟部智慧財產局員工消費合作社印製 第6圖是表示重疊圖示於第5圖的干擾光的微分波形 的圖案的圖表。 第7圖是表示說明判定圖示於第1圖的半導體製造裝 置的蝕刻狀態並進行處理動作的流程的流程圖。 第8圖是表示圖示於第7圖的B部分的動作流程的流 程圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -26- 559941 A7 B7 五、發明説明（y 主要元件對照表 4 0 4 1 10 0 10 1 1 0 2 10 3 10 4 10 5 114 115 116 經濟部智慧財產局員工消費合作社印製 2 0 2 3 2 6 3 0 1 2 4 ，1 2 5 矽基板 掩蔽材 處理室 磁場形成手段 側壁 真空室 真空排氣系統 壓力控制手段 天線 圓板狀導電體 介質 介質環 器殼 板 氣體供給手段 天線電源 匹配電路，濾波器系統 天線電源系統 天線偏差電源 導入端子 下部電極 靜電吸附裝置 樣品台環 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -27- 559941 A7 B7 五、發明説明（ 13 3 13 4 13 5 14 0 15 2 15 3 15 4 15 6 絕緣體 偏壓電源 匹配電路，濾波器系統 計測口 計測器 計測器控制，演算手段 系統控制手段 控制介面 顯示手段 光學傳送手段。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -28-559941 A7 B7 V. INTRODUCTION TO THE INVENTION (0 (Background of the Invention) The present invention relates to a device for etching and manufacturing semiconductor devices, and also to a device provided with a measuring means for measuring the depth of uranium engraving. In forming semiconductor devices, in order to Dry etching is widely used to remove layers of various materials such as dielectric materials and insulating material layers formed on the surface of semiconductor wafers, or to pattern these layers. During this dry etching, the above-mentioned layers are processed. It is extremely important to adjust the etching to a desired etching depth or film thickness. Therefore, it is required to accurately determine the end point or film thickness of the uranium etch. However, it is known to dry plasma semiconductor wafers using plasma for processing. The luminous intensity of light of a specific wavelength included in the plasma light changes with the etching of a specific film. As a technique for detecting the etching end point or the film thickness of the semiconductor wafer, the technique is known. Changes in the luminous intensity of a specific wavelength from the plasma are detected during the etching process, and the Techniques for engraving endpoints or film thicknesses. To improve this detection accuracy, it is necessary to reduce false detections due to fluctuations in the detection waveform due to noise. As a technique for detecting the etching endpoint of a semiconductor wafer, it is well known to use disclosure In Japanese Patent Application Laid-Open No. 5-1 7 9 4 6 7 (Knowledge Technology 1), Japanese Patent Application Laid-Open No. 8-2 7 4 0 8 4 No. 8 (Knowledge technology 3), and JP 2000- 1 0 06 3 5 6 (Knowledge technology 4) and other interference meters. JP 5-1 7 9 4 6 7 Bulletin (Known Technology 1) The paper size in this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page). Manufacturing-4- 559941 A7 B7 V. Description of the invention (2) (Please read the precautions on the back before filling this page) 'Use three types of red, green and blue filters to detect interference light (plasma light)' Detector of the end point of etching; in Japanese Unexamined Patent Publication No. 8-2 7 4 0 8 2 (USF 5 6 5 8 4 1 8) ( In the known technique 2), the time variation of the two-wavelength interference waveform and its differential waveform are used to count the extremes of the interference waveform (the maximum and minimum of the waveform. Zero crossing points of the differential waveform). Time is used to calculate the etching rate, and the remaining etching time to reach a predetermined film thickness is obtained based on the calculated etching rate. The etching process is stopped based on this time. In Japanese Patent Application Laid-Open No. 2 0 0-9 7 6 4 8 (Xi In the known technique 3), a waveform (with a wavelength as a parameter) of a phase difference between the light intensity pattern of the interference light before the processing (using the wavelength as a parameter) and the light intensity pattern of the interference light after or during the processing is obtained. The difference waveform is compared with a database-based difference waveform to measure the step difference (film thickness). Japanese Patent Laying-Open No. 2 0 0 — 1 0 6 3 5 6 (conventional technique 4) relates to a spin coating device that measures the time variation of interference light related to multiple wavelengths to determine the film thickness. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to detect the end of etching and stop processing. In fact, it is extremely important that the remaining thickness of the film is as close to or equal to the predetermined thickness. In the conventional technique, the time is adjusted based on the premise that the etching rate of each layer is constant to facilitate the monitoring of the film thickness. The reference etching rate 成为 is obtained in advance, for example, by processing a wafer as a sample. In this technique, when a time corresponding to a predetermined film thickness elapses, the etching process is stopped. However, it is known that actual films, such as the S i 〇2 layer formed by the LPCVD (low pressure chemical vapor deposition) method, have low reproducibility in thickness (the thickness of the formed layer has a large deviation). Paper size Shicai Guanjiaxian (CNS) A4 · (210X297mm) -5- 559941 A7 B7 V. Description of Invention (3) (Please read the notes on the back before filling this page). The allowable error of the thickness depending on the processing variation in the L P CVD is, for example, approximately 10% corresponding to the initial thickness of the Si 102 layer. Therefore, the actual final thickness of the Si 102 layer left on the silicon substrate cannot be accurately measured by adjusting the time according to the conventional technique. In the above-mentioned conventional techniques, the following points are not considered. (1) Etching using a masking material (for example, a photoresist, a nitride film, and an oxide film) causes the interference light from the masking material to overlap the interference light of the material to be etched. To detect only the etching state of the material to be treated from the interference light, it is necessary to remove the influence of the interference light from the masking material as much as possible. (2) In addition, in the process of etching the material of the processed material (such as silicon or an insulating film or a masking material provided thereon), the masking material is also etched together with the silicon or insulating film, not only from The interference light from the processing material and the interference light from the masking material also change. Therefore, in order to detect only the etching amount (etching depth) of the processing material from the effect of the masked uranium engraving, the interference from the masking material must be considered. Changes in light are detected, but conventional techniques have not been considered. The wafer for processing (3) mass production process printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is due to the component structure, which causes the initial thickness of the masking material or the initial thickness of the masking material to have different distributions on the wafer surface. Therefore, an interference light from a different film thickness is superimposed on a film-like layer to be processed. To reduce these effects, the conventional technology has not been fully considered. For the above reasons, it is necessary to adjust the layer of the material to be processed (the layer of the film to be processed by the semiconductor process) with high accuracy, especially the etching depth or the remaining film thickness of the layer to be treated in the plasma etching process. Etching status This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297mm) -6- 559941 A7 ___B7_ V. Description of the invention (4) It is difficult to process semiconductors (wafers) with high precision. (Please read the precautions on the back before filling out this page) (Summary of the invention) The object of the present invention is to provide a semiconductor manufacturing device that can process semiconductors on a wafer with high accuracy. Another object of the present invention is to provide a method for determining the end point of a semiconductor process for performing semiconductor processing using plasma etching and detecting the state of uranium engraving such as the etching depth and the residual film thickness of a layer to be processed with high accuracy. The above-mentioned object is a semiconductor manufacturing device which is a semiconductor manufacturing device which is arranged in a container and has a plurality of films on its surface, and is subjected to an etching treatment using a plasma generated in the container. The display device includes display means for displaying a change in light of a plurality of wavelengths from the surface of the wafer obtained within a predetermined period of the processing, and a function of determining a state of the etching process based on a change amount of the display. In addition, a semiconductor manufacturing device is a semiconductor manufacturing device which is arranged in a container and has a plurality of films on its surface, and is subjected to an etching treatment using a plasma generated in the container. The Ministry of Intellectual Property Bureau employee consumer cooperative prints a measurement means for measuring light from the surface of the wafer during a predetermined period of the process, and displays a display showing data on changes in the light during the predetermined period detected by the measurement means. Means, and a calculation means for calculating the state of the etching process using the data, and a controller for adjusting the etching process based on a calculation result of the calculation means. In addition, a semiconductor manufacturing device is characterized in that the surface of the paper has the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 559941 A7 B7 ___ 5. Description of the invention (5) (Please read the back Note: Please fill in this page again.) There are multiple layers of film to measure the light interference from the surface of the semiconductor wafer processed by the generated plasma, and display the light interference obtained during the predetermined period of the processing. The display means for the change and the change in the use of the above-mentioned light interference in accordance with the time change of the above-mentioned light wavelength indicating a specific chirp is judged and displayed. The above-mentioned object is a method for determining an end point, which is characterized in that plasma is generated and the interference of light from the surface of a semiconductor wafer is measured while the semiconductor wafer having a plurality of layers on its surface is being processed, and the measurement is performed from the measurement. The change in the interference of light becomes a time change of the wavelength of the light above a predetermined threshold, and it is determined that one of the film thicknesses of the film of the semiconductor wafer is achieved. In addition, an end point determination method is characterized in that plasma is generated, and a semiconductor wafer having a plurality of films on its surface is processed while detecting a disturbance change of light from the surface of the semiconductor wafer. The data of the interference change of the detected light is superimposed on a circle, and the time change of the wavelength of the light of the light above the predetermined value is determined by the interference change of the light obtained from the overlapped data to determine one of the films of the semiconductor wafer. The film thickness is achieved. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (Implementation Modes of Invention) The following embodiments of the invention are used. In the following embodiments, those having the same functions as those of the first embodiment are given the same symbols as those of the first embodiment, and detailed descriptions thereof are omitted. In the following examples, as the method for determining the end point of the semiconductor device manufacturing process according to the present invention, the measurement of the uranium engraving amount in the etching process of the material to be processed (etched ij ij paper i applies the Chinese National Standard (CNS) A4 specification (210X297嫠) -8- 559941 A7 __ _B7 V. Description of the invention (6) (Please read the notes on the back before filling this page) Depth and film thickness). However, the present invention is not limited to this, and may be applied to methods such as measuring the film formation amount (film thickness) of a film formation process such as plasma C V D and plating. Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 to 4. Fig. 1 is a schematic vertical cross-sectional view and a block diagram showing a configuration of a first embodiment of a semiconductor manufacturing apparatus using the present invention. Fig. 2 is a schematic diagram showing light interference for detecting the state of etching in the first embodiment. Fig. 3 is a graph showing an example of data obtained by using light interference in the first embodiment. Fig. 4 is a diagram showing an example of an etched state indicated by the display means of the first embodiment using the data of Fig. 3; Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In this embodiment, when plasma is used to etch semiconductor materials such as semiconductor wafers, data indicating the interference light or its differentiation is set for the materials to be processed (for samples). Wafers) and standard patterns PS and PM of the wavelength dependence (with the wavelength as a parameter) of each etching amount of the masking material having the processing material. Then, the intensity of the plural wavelengths of the actually processed interference light with respect to the sample material to be processed and the actual material to be processed (actual wafer) is measured, and the data indicating the measured interference light intensity or the differential chirped light are obtained. The real pattern of the wavelength dependence of the data (using the wavelength as a parameter) is compared with the standard pattern of the differential chirp and the real pattern, and the actual etching amount of the material to be processed (end point of the process) is obtained. Fig. 1 is a horizontal view showing a longitudinal section of a plasma etching apparatus to which the present invention is applied to a plasma etching apparatus having a magnetic field U H F band electromagnetic wave radiation discharge method. In the first figure, the processing chamber 1 0 0 is capable of achieving 10 to 6 copies. The Chinese standard (CNS) A4 specification (210X297 mm) is applicable. -9- 559941 A7 _______B7 V. Description of the invention (7) ( Please read the precautions on the back before filling in this page.) A vacuum container with a vacuum of about τ 0 rr is equipped with an antenna 1 1 〇 that emits electromagnetic waves as a means for generating plasma, and a wafer on the bottom. The lower electrode of the sample W is 1 3 0. The antenna 110 and the lower electrode 130 are arranged in parallel and facing each other. A magnetic field forming means 1 0 1 ′ formed, for example, by an electromagnetic wire yoke and a yoke is provided around the processing chamber 100 to form a magnetic field with a certain distribution and strength. By the interaction of the electromagnetic wave radiated from the antenna 1 10 and the magnetic field formed by the magnetic field forming means 10, the plasma is introduced into the processing gas inside the processing chamber, and the plasma P is generated to process the lower electrode 1 3 0 on the sample w. The processing chamber 100 is evacuated and adjusted by a vacuum exhaust system 104 and a pressure control means 105 connected to the vacuum chamber 103, so that the internal pressure can be controlled at, for example, 0. 5 P a or more and 4 P a or less. The processing chamber 100 and the vacuum chamber 103 are ground potentials. The side wall 103 of the processing chamber 100 is adjusted to a temperature of, for example, about 50 ° C by a temperature control means (not shown). The antenna 1 1 0 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is composed of a disc-shaped conductor 1 1 1, a dielectric 1 1 2, and a dielectric ring 1 1 3, and is held as part of a vacuum container.器 壳 1 1 4. A plate 1 1 5 is provided on one side of the plasma of the disc-shaped conductor 1 1 1. The processing gas used for the sample etching and film formation is supplied from the gas supply means 1 1 6 at a predetermined flow rate and mixing ratio, and is uniformized inside the disc-shaped conductor 1 1 1 by providing a plate. Many holes of 1 1 5 are supplied to the processing chamber 1 0 0. The disc-shaped conductor 1 1 1 is controlled by a temperature control means (not shown). The temperature is adjusted to, for example, 30 ° C. For the antenna 1 1 0 ', the paper size of the guide applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -10- 559941 A7 ___ B7__ 5. Description of the invention (8) The input terminal 1 2 6 is connected to the antenna power supply 1 2 1. Antenna bias power supply 123 and matching circuit, filter system 122, 124, 125 (please read the precautions on the back before filling out this page). Antenna power system 1 2 0. The antenna power supply 1 2 1 is ideal to supply electric power in the UHF frequency band from 300 MHz to 901 MHz, and to radiate electromagnetic waves in the U H F frequency band from the antenna 1 10. The antenna bias power supply 1 2 3 is printed by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, for example, a bias voltage having a frequency of about 1,000 Η ζ ζ or several MΗ ζ to about 10 Η μ ζ is passed through the disc-shaped conductor 1 1 1 applied to the board 1 1 5 and 俾 controls the reaction on the surface of the board 1 1 5. In particular, the oxide film is etched using a CF-based gas, and the material of the board 1 1 5 is high-purity silicon or carbon. The reaction of the F group or CFX group on the surface of i 1 5 can adjust the composition ratio of the groups. In this embodiment, high-purity silicon is used for the plate 1 15. In addition, aluminum is used for the disc-shaped conductor 1 1 1 and the container, and quartz is used for the dielectric 1 1 2 and the dielectric ring 1 1 3. The distance between the lower surface of the plate 1 1 5 and the wafer W (hereinafter, referred to as a gap) is 30 mm or more and 150 mm or less, and more preferably 50 mm or more and 120 mm or less. In this embodiment, the antenna power supply 1 2 1 is 4 5 0 Μ Η ζ ′ and the antenna bias power supply 1 2 2 is 1 3. 5 6 Μ Η zeta frequency, and the gap is set at 7 Omm. In the lower part of the processing chamber 100, a lower electrode 130 is provided opposite to the antenna 1 10. The lower electrode 130 is a sample W on which a wafer or the like is held and held on a sample mounting surface such as a wafer. On the outer periphery of the sample w, for example, a sample stage ring 1 3 2 made of high-purity sand is provided on the insulator 1 3 3. The lower electrode 1 3 0 is connected through a matching circuit, and the filtering system 1 3 5 is connected with a bias voltage which is ideally 4 0 k Η ζ to 1 3 · 5 6 Μ Η ζ This paper size applies Chinese National Standard (CNS) M specifications (21 × 297 mm) -11-559941 A7 __ B7 V. Description of the invention (9) The bias power of the electric power 1 3 4, The bias voltage applied to the sample W is controlled. In this embodiment, the bias power supply 1 3 4 uses a frequency of 8 0 0 kH z (please read the precautions on the back before filling in this page). ○ The following describes the measurement port provided to measure the surface state of the sample w. 1 4 0. In the present embodiment, the measurement port 1 40 is an antenna 1 1 0 mounted on the sample W opposite to the sample W. As described below, the sample W can be measured from vertically above through a large number of through holes formed in the plate 1 15. Surface film, etc. Further, by setting other measurement ports 140 at the position of the outer periphery of the measurement sample W or the intermediate position between the periphery and the center of the sample W, information on the in-plane distribution of the surface of the sample W can be obtained. Of course, the installation of the measurement port is not limited to the two parts of the outer peripheral part and the middle part as described above, and one or three parts may be made, or of course, other arrangements such as arranging on the circumference are also possible. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed on the above measurement ports 1 40, respectively, provided with optical transmission means 1 5 1 such as optical fibers or lenses, and reflected the direct light from the plasma P or the wafer W Optical information on the surface state of the wafer W, such as reflected light or disturbed light on the surface, is transmitted to a measuring device 1 5 2 composed of, for example, a camera, an interference film meter, or a day image processing device, and measured. The measuring device 15 2 is controlled by the measuring device, and the calculation means 15 3 is controlled, and at the same time, it is connected to the upper system control means 1 5 4. The system control means 15 is a controller for controlling the state of the device or the system including the device via a control interface 15 5. The calculation means 153 described above may be an electronic circuit composed of a complex memory chip or a microprocessor, or an electronic circuit composed of a single chip microcomputer or the like. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -12- 559941 Α7 Β7 V. Description of the invention (β (Please read the precautions on the back before filling this page) The plasma filling according to this embodiment The engraving device is configured as described above. The specific process of etching a silicon oxide film using this plasma etching device is as follows. First, a wafer w to be processed is a sample loading mechanism (not shown). After being moved into the processing chamber 100, it is 'mounted' to be adsorbed on the lower electrode 130, and the height of the lower electrode is adjusted and set to a predetermined gap if necessary. Then, the processing chamber 100 is vacuumed. The exhaust system 106 is evacuated by vacuum. On the other hand, the gas required for the etching process of the sample W, such as C 4 F 8 and A r and 0 2, is supplied by the gas supply means 1 1 6 at a predetermined flow rate and mixed. For example, AI * 4 0 0 sccm. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed C 4 F 8 15 sccm, 0 2 5 sccm, and the board 1 1 5 from the antenna 110 was supplied to the processing room 100. Simultaneously , The interior of the processing room 1 0 0 is adjusted It is, for example, a predetermined processing pressure of 2 P a. On the other hand, the magnetic field forming means 1 0 1 is equivalent to a frequency corresponding to the antenna power source 1 2 1 at a frequency of 4 5 0 Μ Η z. An approximately 60-gaussian horizontal magnetic field is formed near the lower part of the board 1 15. In this way, electromagnetic waves in the UHF band are radiated from the antenna 1 1 0 by the antenna power source 1 21, and the processing chamber 1 is interacted with by the magnetic field. Plasma P is generated in 0 0. With the plasma P, ionized radicals are generated in the dissociation process gas, and the antenna high-frequency power supply 1 2 3 and the bias power supply 1 3 4 are controlled, and the wafer W is subjected to etching and other processing. The input power of each power source is, for example, an antenna power supply of 12 1 for 1000 W, an antenna high-frequency power supply of 12 3 for 300 W, and a bias power supply of 14 1 for about 800 W. In addition, with uranium At the end of the engraving process, the power is stopped and the paper size is subject to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -13- 559941 A7 B7 V. Description of the invention (y The uranium engraving is terminated by the supply of processing gas. (Read the notes on the back and fill out this page) Optical information of plasma light emission or wafer surface state is transmitted through the measuring port 1 4 0, etc., and is measured by the measuring device 1 5 2 through the optical transmission means 1 5 1 and the like, and controlled by the measuring device, and the calculation means 1 5 3 Perform calculation processing based on the measurement results, and then send it to the upper system control means 1 5 4. Through the control interface 1 5 5, the plasma processing device system is controlled. That is, a multi-wavelength radiated light from a spectrometer 1 5 2 including a light beam (for example, etching depth and film thickness) having a measurement light source (for example, a halogen light source) is transmitted by an optical transmission means 1 5 1 It is guided into the vacuum chamber 103 and hits the material to be processed at an approximately perpendicular incidence angle. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As shown in FIG. 2, in this embodiment, the material to be processed W is a photoresist 4 4 having an organic compound as a masking material, and BARC (Back Antj-Reflection coating: A structure in which a film 4 3, a silicon nitride film 42, and a silicon oxide film 41 are laminated on a silicon substrate 40 of a substrate. The light radiated in the vacuum chamber 10 is the interference light formed by the reflected light 9 A, 9B reflected on the surface of the member to be processed and the reflected light 1 0 A, 1 0 B reflected by the masking material. . That is, the radiated light 9 guided to the unmasked material 41 1 through the etched portion is the radiated light 9A reflected on the BARK material 4 3 and the surface of the substrate silicon 40 and the oxide film 41 The reflected reflected light 9 B is formed with interference light. The radiated light 10 guided to the masking material 41 is the radiated light 10 A reflected by the upper surface of the masking material 41 and the boundary interface formed between the masking material 41 and the BARK material 43. Reflected radiated light This paper is sized according to Chinese National Standard (CNS) A4 (210X297 mm) -14- 559941 A7 B7 V. Description of the invention (y 1 〇B has interference light. (Please read the precautions on the back first) Please fill in this page again) These interference lights are based on the difference between the masking material and the processed material, that is, the thickness of the masking material 4 4 and the cutting of the processed material (in this figure, the contact of the BAR c part). The interference component of the engraved star 5 0 7. The interference light is guided to the spectrometer of the measuring device 15 2 through the measuring port 1 40, and the light transmitting means 15 2 is transmitted to the measuring device according to the output signal from the spectrometer. Control and calculation means 153 are used to determine the uranium engraved amount of the material to be processed and the thickness of the masking material or the end point of the process (etching in this case). The measuring device 152 has a spectroscope and is controlled by the measuring device. The calculation means 1 5 3 is provided with: receiving signals from data output from the measuring device, and The first digital filter circuit, the differentiator, and the second digital filter circuit for the predetermined processing; and the memory means for memorizing the film thickness or the so-called end point of the so-called uranium engraving for the judgment of the differential waveform pattern database, the comparison of differential waveform Based on the results of these comparators, a calculator that calculates the end point of the etching and makes a judgment, and a display means for displaying the judgment result of the above-mentioned data signal or processed data on the user's display 1 5 6. Intellectual Property of the Ministry of Economic Affairs Bureau employees ’consumer cooperatives printed display means 156 are alarm means with a display using liquid crystal or CRT, or an alarm with light, sound, etc., or a combination of these when reaching a predetermined film thickness or end point. In this embodiment It has a display that displays measurement data as a graph, and a display means with a means of light and sound alarm 1 5 6. In addition, the first figure is a functional builder showing a measuring device for the amount of etching, and the display means 1 5 6 The actual configuration of the measuring device 1 5 2 without the spectroscope can be controlled by the CPU, or the process of measuring the etching depth and film thickness can be maintained. The scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -15- 559941 A7 ______B7 V. Description of the invention (j (please read the precautions on the back before filling this page) or the differential waveform pattern database of interference light, etc. The ROM of various data or the RAM for measuring data retention, a memory device composed of a memory device such as an external memory device, a data input / output device, and a communication control device. This is for the following The other embodiments described are also the same. The principle of the light emission in the vacuum chamber 103 of the measuring device 152, measuring device control, and calculation means 15 according to this embodiment will be described in the same way. The material to be processed and the multi-wavelength luminous intensity of the masking device shown in Figure 1 above are smoothed as the data of the time series signal, and the data of the time series are smoothed as the differential constant. Stored in a memory device such as RA Μ. Further, from the smoothed differential constant series data, a real pattern showing the wavelength dependence (with the wavelength as a parameter) of the differential chirp indicating the intensity of the interference light was obtained. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. On the other hand, as a database of differential waveform patterns, a differential waveform pattern of an interference light intensity for a wavelength band corresponding to a step difference between a processed material and a masking material to be measured is set in advance. Information 値. The differential waveform pattern of the result shows the etched amount of the worm on the processed material on the display 15.6. In order to measure and control the in-plane of the material to be processed widely, a plurality of spectroscopes may be provided. Fig. 2 shows a longitudinal sectional shape of the material to be processed during the etching process; and Fig. 3 shows an example of a solid wave length pattern of interference light obtained during processing of the wafer W to be processed. In the second figure, the material to be processed (crystal circle) is a masking material 41 laminated on a silicon substrate 40. At this etching position, the paper is compliant with China National Standard (CNS) A4 specification (210X297 mm) -16- 559941 A7 B7 V. Description of the invention (In the process, the silicon substrate is an etched material, and these heat treatments are performed by It is called, for example, STI (Shallow Trench Isolation) uranium for element separation (please read the precautions on the back before filling this page). In Figure 3, the horizontal axis represents the uranium engraving time, and the vertical axis represents the wavelength in a predetermined range. ; Color intensity is used to indicate the light intensity at any wavelength at each time. As shown in the figure, depending on the wavelength of the interference light, the pattern of its intensity changes with the change of the etching process time. The long wavelength range (the second wavelength Frequency band: For example, the differential waveform of interference light data at 700 nm is a period that changes its size with the time of the etching process and changes relatively slowly. On the other hand, the short wavelength range (the first wavelength Frequency band: for example, 300 nm) The interference waveform is compared with the long-wavelength wave with a longer period, which becomes a short-cycle change. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs As can be seen from the figure, by processing the change in light emission in the vacuum chamber 10 of this embodiment, the change in the interference component according to the etching of the masking material and the change in the interference component according to the step difference between the processed material and the masking material are more significant. Clearly. This is because the refractive index of the material being etched (for example, the refractive index of the nitride film of silicon and the masking material and the vacuum refractive index of the trench portion) is different for the wavelength. Also, as the etching time passes, It can be seen that the pattern of the change of the differentiated interference light is divided into three fields. That is, in FIG. 3, the uranium engraving of the BARC material, the etching of silicon nitride (S i N), and the oxide film (S i〇 2) Interfering light engraved with uranium. In each range, it can be seen that the color-dense area representing the size of the data puppet has a specific pattern on the coordinate plane (dimensions) of wavelength and time. Scope, or this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -17- 559941 A7 B7 V. Description of the invention (^ (Please read the precautions on the back before filling this page) In the data of the range, on the coordinate plane, the stripes are arranged alternately, and the larger a top " fields > and the valley valleys are arranged alternately. These "ridge ridges or valley valleys" It means the change of wavelength time with the magnitude of the interference light changing above or below a specific chirp. It can also be seen that the "ridge" area of the stripe has a part where the chirp becomes smaller on the way, and it can be seen that > The characteristic of the ridge ridge is broken. According to the review by the inventors, these patterns are formed by overlapping interference light according to the etching of the material to be treated and the masking material. "The pattern of the ridge "% 谷 " According to the intensity of the interference light of the material to be processed; it can be seen that the smaller area of the ridge of the ridge ridge that breaks the above is the result of the interference light of the masking material overlapping with the interference light of the material to be processed. By. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, that is, the patterns from the above-mentioned a ridge 〃 > ) Obtained by interference, the pattern reflects the progress or state of the etching and its changes. Using the characteristics of the patterns of these materials, the etching state of the material to be processed (the thickness of the residual film or the arrival of the end point) can be known, and the etching state of the masking material can be determined. In addition, as shown in FIG. 3, when processing a semiconductor wafer having a structure in which a plurality of layers are stacked, changes in the above-mentioned characteristics of each layer occur, and it is possible to clarify the progress of the etching process over time, and detect The progress of the etching state is changed. The present invention is based on the knowledge and reviewers of such inventors. An example of the display of the above-mentioned disturbing light data in this embodiment will be described with reference to FIG. 4. Fig. 4 is a diagram showing an example of an etching state indicated by the display means of the first embodiment using the data of Fig. 3; This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -18- 559941 A7 B7 V. Description of the invention (θ (Please read the notes on the back before filling this page) In this figure, as mentioned above The differential data of the interference light shows the etching time on the horizontal axis and the wavelength of the interference light on the vertical axis. Using the displayed data, you can know the following. From the pattern changes with the passage of time on the above data, It is divided into a plurality of fields corresponding to each material to be etched, and the time required for the etching of each material layer can be known from the length of time in each field. If the layer thickness of these films is accurately known in advance, the etching rate can be known from this time ( Ratio). In each field, find the coordinates of a specific ridge that selects a specific "ridge" and overlap it. [In this embodiment, (a, b), (c, d), ( e, f). The "ridge" superimposed on this line indicates how the etching of the corresponding processed material (BARK, SiN, Si〇2) changes with time. If you know the processed Refractive index of the material The etch rate (ratio) of the processed material can be detected from the line corresponding to the 'ridge ridge.' The etch rate detected by using a pattern of differential data from the interference light printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs can detect To determine with higher accuracy, determine the so-called thickness of the film during etching or the state of the etching at the end point. In addition, as described above, the etching time (the time required to etch each film) corresponding to the area of each material to be processed can be detected. Therefore, the film thickness of each material can also be detected with high accuracy. In these inspections or judgments, the characteristics of the interference light change caused by the etching of the material to be processed are used, and the interference light and the processing by the masking material are overlapped with each other. The influence of the interference light caused by the etching of the material is greatly reduced, and the erroneous detection is suppressed to a very low level. In addition, the data of the etching state obtained above are displayed on a graph display or the like by a number, a graph, or the like. Display means 1 5 6. Also, these capital paper standards are applicable to Chinese National Standard (CNS) A4 specifications (210X297 mm) -19- 559941 A7 B7 V. Description of the invention θ (please read the precautions on the back before filling this page) It is also possible to store it separately in the memory device. Therefore, the user can know that the differential data of the waveform of the interference light will change over time, and also know how to borrow The etching state, residual film thickness, or etching speed determined by the device can provide users with useful information when adjusting the operation of the device, and can also improve the efficiency of the device's operation. Also, these differential waveform patterns of interference light, Each state of the material to be treated becomes a unique pattern. If the materials of the material to be treated are different, these patterns will also change. Therefore, for various materials required for processing and the range of etching depth, through experiments It is preferable to obtain the data in advance, and use the differential waveform pattern as a standard pattern and keep it in the recording device. These memory devices may be provided under the control of the measuring device described above, the calculation means 153 may be provided, or they may be provided as external memory devices connected to a cable. Hereinafter, another embodiment of the present invention that uses the pattern of the differential waveform of the interference light to determine the etching state with higher accuracy will be described. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in the above-mentioned first embodiment, the wafers to be sampled are etched before the wafers to be processed are processed, and the etching rate or film obtained at this time is The thickness is used as reference data for the actual processed wafers to be processed thereafter. This type of data is used as a premise that the etching conditions of the wafer for processing the sample and the wafer for the actual processing are only within a predetermined difference range that is considered to be approximately the same. In the conventional technique, whenever the specifications of such an etching condition are different, a wafer of a sample for measuring such information is processed. For this reason, for example, when the specifications of the etching gas are different in each batch, and each time such specifications are changed, the processing of the sample wafer becomes the acquisition information, and the time of this amount becomes the need for this paper. Standard (CNS) A4 specification (210X297 mm) _ -20- 559941 A7 B7 V. Description of the invention (^ (Please read the notes on the back before filling this page). That is, in this conventional technology, In order to quickly respond to the needs of users, the wafers are processed in small batches under many different conditions each time. When the wafers to be processed are included in different batches under different processing conditions, the processing efficiency is lost. In addition, when the wafer that processes the sample contains a special phenomenon, it is because the data containing the influence of the phenomenon is used as the reference data. Therefore, in the processing of the actual wafer based on the data, the actual person is not applicable. The semiconductor device to be processed does not meet the desired specifications, and there is a risk of a problem of lowering the yield. Thus, in this embodiment, different etching gases are used. Multiple processing data with different etching conditions such as specifications, etc., are obtained as reference data. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 5 shows the differential waveform of interference light obtained when multiple processing with different etching conditions is performed side by side. The graph of the data. Because the uranium carving conditions are different, the data of the differential waveform of the interference light is different in each condition. In particular, the distribution or processing time of the areas of larger radon and smaller radon is different. It shows that the etching speed is different. Fig. 6 is a pattern showing the differential waveform of the interference light when the patterns of these data are arranged using specific parameters for the complex data of such different conditions. , The specific component obtained by analyzing the differential waveform data shown on the right and principal component analysis is used, and in this embodiment, the second principal component is used. As shown in FIG. 5, obtained from waveform data of a plurality of different etching conditions. The positions of the peak chirps (minimum chirps) of the second component are at different positions. The first major component of the above-mentioned differential waveform data is The amount indicated in the sub-section is equivalent to the multi-wavelength interference in the case of plasma light emission. The paper standard applies the CNS A4 specification (2 like 297)--21-559941 A7 B7 V. Description of the invention ( ^ (Please read the notes on the back before filling in this page) The properties of the average natural light spectrum of light. On the other hand, the amount represented by the second principal component represents the gap from the first principal component, which means that it depends on the plasma. The amount of how the luminous interference light changes from the average quantity. The minimum value 指 refers to the number of 値 which differentiates the component and passes through the zero point. According to the review by the inventors, it can be seen that the graph shown in FIG. 6 is shown on the left. The arrow in the column indicates the position of the peak 値 (minimum 値) of the waveform of the second principal component, and can be approximately the same. When the length of the etching time on the horizontal axis of the telescope is consistent, the corresponding column on the right side The differential pattern becomes approximately similar in a specific range. In particular, it can be seen that the distribution of the larger radon fields and the smaller radon fields becomes approximately similar shapes. In this way, the data obtained under a plurality of uranium engraving conditions with a uniform pattern are used: an etching state that can be detected with high accuracy. For example, by using an average of a plurality of pieces of data having a pattern of approximately similar shapes superimposed as described above, the influence of data patterns depending on special phenomena and conditions can be suppressed, and a more accurate judgment can be made. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. When overlapping, the coordinates of the horizontal axis (time) and vertical axis (wavelength) used as a reference are determined in advance, and converted into the time-wavelength coordinate position of the reference. Count it and count it. For example, when the time interval of the horizontal axis of the reference coordinate is expanded to match the pattern (the position of the minimum 値 of the second principal component is matched), it is necessary to obtain the data of the intermediate point of the original coordinate point before the expansion. The data is obtained by interpolating the data of the original coordinate points. In this case, a well-known method of interpolation of mathematical data can be used. In the following, using FIG. 7 and FIG. 8 to explain the determination of the paper size of the semiconducting paper of this embodiment as applicable to the Chinese National Standard (CNS) M specification (210X297 mm) -22- 559941 A7 B7 5. Description of the invention (^ (please first (Read the precautions on the back and fill in this page again.) Figure 7 shows the flow of processing operations performed by the above-mentioned etching and other states of the body manufacturing apparatus. Fig. 7 shows the processes performed to determine the etching state of the semiconductor manufacturing apparatus shown in Fig. 1 The flowchart of the operation flow. Fig. 8 is a flowchart showing the operation flow shown in part B of Fig. 7. The example shown in Fig. 7 shows the wafer processing (in this embodiment, it is In the case of uranium engraving, the wafer that is the sample is subjected to an etching process to obtain data, and data from a predetermined etching state such as an etching rate is obtained from the obtained data, and then the actual processing wafer processing flow is performed. In the semiconductor manufacturing apparatus of the embodiment, the initial setting before the wafer processing is performed in step 701. As this initial setting, there is a database name or location where the data of the sample wafer is stored. The identification name of the unprocessed wafer, the step number for determining the residual film thickness, the target remaining film thickness number, or the reference frame used for the end point determination, etc. The wafer processing is started after this step (step 7 0 2 ). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in step 703. When it is confirmed that the wafer processing is started, the sampling of the data in process is started. Then, in step 704, it is shown in the figure in Figure 1. The light receiving means 1 40 receives light emitted from the vacuum container 100 which reflects light from the wafer surface, and transmits the light through a light transmitting means such as an optical fiber 1 5 1 through a measuring device 1 5 2 having a spectroscope, and transmits and receives the signal. The measuring device controls the calculation means 1 5 3 to obtain the data of the interference light. More specifically, the data in this step is that the light in the container 100 given to the spectroscope from the light transmitting means 15 2 is used as Multi-wavelength time series signals are output, smoothed by digital filters, etc. under the control of the measuring device and calculation methods. The smoothed data is in accordance with the Chinese National Standard (CNS) A4 specification using this paper standard. ( 210X297 mm) -23- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 559941 A7 ______B7 _ _ V. Description of the invention (2) Well-known method (SG, etc.) to calculate the micro coefficients, and then smoothed by a digital filter. The differential data of the interference waveform at the complex wavelength is the data obtained as the time-wavelength coordinates. Comparing the data obtained in this way and the reference data, the number of remaining thicknesses of the film on the wafer is calculated as follows A. Then, in step 706, it is determined whether or not the residual film thickness is determined. If it is determined that the residual film thickness is not determined, the process moves to step 007 to determine whether the data sampling of the wafer currently being processed has ended. When it is determined in step 7 0 6 that the remaining film thickness is determined, then in step 7 0 7 it is determined whether the remaining thickness of the film to be judged is equal to or smaller than the predetermined threshold of the judgment standard. If it is larger than the predetermined threshold, the process returns to step 7 0 4 Continue wafer processing and data sampling. If it is judged that it is smaller than the predetermined time, in step 709, the data sampling is ended and the necessary settings at this time are performed. After that, it is determined in step 7 10 whether to process the acquired data. If it is determined that processing is not required, the process moves to step 7 1 4 to determine the end of wafer processing. At this time, the acquired data may be memorized in hardware such as post-processing. If it is judged that data processing is performed, the data in 'B' shown in step 7 1 1 is processed. The processing performed here is explained in detail using FIG. 8. Using the data processed in B, the etching conditions are calculated in step 7 1 2. After considering the engraving conditions calculated in the S record, the data processing is terminated, and it is judged whether the wafer processing is terminated (steps 7 1 3, 7 1 4). When it is judged that the wafer processing is terminated, the predetermined wafer processing is terminated. (Steps 7 to 15), continue wafer processing of samples, etch processing of actual processed wafers, etc. & Zhang scales apply Chinese National Standards (CNS) Α4 specifications (210X297 mm) " '24-(please first Read the notes on the back and fill in this page) Order 559941 A7 B7_ V. Description of the invention (j, if you decide to continue processing, go back to step 7 0 2. (Please read the notes on the back before filling this page) Using FIG. 8, the process B in FIG. 7 will be described in detail. In step 801, it is determined whether data processing is possible. For example, when the discharge is started or the order for removing electricity is selected, except for the range of time when the optical signal in the container changes transiently. For the selected range of data that can be processed, the principal component analysis of the series of data during the above smoothing is performed (step 802). At step 803, the principal component obtained from the result of the principal component analysis is calculated. The score of the intrinsic spectrum (SCORE), and in step 804, the time at which the minimum 値 (extreme 値) of the second principal component is calculated by the time-varying differential processing of the score, etc. In this differentiation processing, S is used -A well-known method such as the G method. For the time when the extreme time obtained in step 804 is reached, it is determined whether to process the time-wavelength differential waveform data obtained by superimposing the wafer processing on other etching conditions (step 80). 5), when being processed, the patterns are overlapped to make the patterns consistent, so that the extreme moments that become the second principal component become the same time scale (step 806). Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative cooperative seal ^ Then, in step 807, the number of predetermined coordinates (time-wavelength) is calculated using a well-known interpolation method for overlap, and in step 808, the calculated data is used to overlap and find the average. The data of the etching state calculated by using the data obtained in this way is to reduce the influence of the sample suppression based on the data of the special phenomenon included in the processing to a high degree of accuracy. Calculate the etching speed or time. You can also use a specific range of each of the patterns of the data obtained from wafer processing under multiple etching conditions that cannot be performed by conventional techniques (a paper size applies the Chinese national standard (CNS) ) A4 specification (210X297 mm) " -25- 559941 A7 B7 V. Information about the pattern of the invention description ((Please read the precautions on the back before filling in this page) wavelength) can improve the efficiency of wafer processing, meanwhile The judgment data using the actual processed wafer has high accuracy. Therefore, even when the material of the wafer or the specifications of the etching gas conditions are frequently changed, the semiconductor manufacturing apparatus can be processed with higher efficiency and higher yield. (Brief Description of the Drawings) Fig. 1 is a drawing showing a schematic configuration of a first embodiment of a semiconductor manufacturing apparatus of the present invention using a longitudinal section and a block. Fig. 2 is a schematic diagram showing detection of interference of light in the etching state in the first embodiment; and a diagram showing a longitudinal sectional shape of a material to be processed during the etching process. Fig. 3 is a graph showing an example of data obtained by using light interference in the first embodiment. Fig. 4 is a diagram showing an example of an etching state indicated by the display means of the first embodiment using the data of Fig. 3; Fig. 5 is a diagram showing a differential waveform of interference light obtained when plural processes with different etching conditions are arranged one above the other. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Fig. 6 is a graph showing a pattern of the differential waveform of the interference light shown in Fig. 5 superimposed. Fig. 7 is a flowchart showing a flow for determining an etching state of the semiconductor manufacturing apparatus shown in Fig. 1 and performing a processing operation. Fig. 8 is a flowchart showing an operation flow shown in part B of Fig. 7. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -26- 559941 A7 B7 V. Description of the invention (y Comparison table of main components 4 0 4 1 10 0 10 1 1 0 2 10 3 10 4 10 5 114 115 116 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 0 2 3 2 6 3 0 1 2 4 ， 1 2 5 Silicon substrate shielding material processing chamber magnetic field forming means side wall vacuum chamber vacuum exhaust system pressure control means antenna circular plate Shape conductor medium dielectric circulator shell plate gas supply means antenna power matching circuit, filter system antenna power system antenna deviation power supply terminal lower electrode electrostatic adsorption device sample stage ring (please read the precautions on the back before filling this page) Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -27- 559941 A7 B7 V. Description of invention (13 3 13 4 13 5 14 0 15 2 15 3 15 4 15 6 Insulator bias power matching circuit, Filter system, measuring port, measuring device, control, calculation method, system control, control interface, display, optical transmission. (Please read the precautions on the back first Please fill in this page again.) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs.