TW559696B - Error correction code circuits - Google Patents

Error correction code circuits Download PDF

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Publication number
TW559696B
TW559696B TW90128188A TW90128188A TW559696B TW 559696 B TW559696 B TW 559696B TW 90128188 A TW90128188 A TW 90128188A TW 90128188 A TW90128188 A TW 90128188A TW 559696 B TW559696 B TW 559696B
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error
memory
ecc
logic circuit
bit
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TW90128188A
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Chinese (zh)
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Jeng-Jye Shau
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Jeng-Jye Shau
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Abstract

This invention discloses a method for changing a configuring of an error correction code (ECC) logic circuit for performing an error-check of a changed data-width. The method includes the steps of: (A) sequentially interconnecting a set of N1 identical error-check blocks where N1 is a first positive integer. And, the method further includes a step (B) of reconfiguring the ECC logic circuit by changing the ECC logic circuit to a set of N2 sequentially interconnected circuits comprising N2 of the identical error-check blocks where N2 is a second positive number. In a preferred embodiment, the step of sequentially interconnecting a set of N1 identical error-check blocks is a step of interconnecting the N1 error-check blocks only between sequentially neighboring blocks for transmitting signals only between the neighboring error-check blocks. And, the step of reconfiguring the ECC logic circuit by changing the ECC logic circuit to a set of N2 sequentially interconnected circuits is a step of interconnecting the N2 error-check blocks only between sequentially neighboring blocks for transmitting signals only between the neighboring error-check blocks.

Description

559696 五 發明說明(1) 本發明與錯誤修正 Γ I用於具有可變資料寬声有關。尤其,本發明與適 |及應用有關。 又之貝料錯誤修正的ECC電路之裝置 應用錯誤修正電路) 6 |性的許多極高效率方法j f。)2賢料修正是改良資料完整 料儲存裝置方面的應 匕廣泛運用在通訊系統或資 I系統方塊圖可用來解圖所不的ECC計算機實例 I具有固定位元數量(在m業理。這個ECC計算機運算 料封包。冑自未經處 ==64位元)的預先定義資 位元樹狀結構(在本^丨^ ^的位元被傳送至複數個同 同資料子集的同位元Γ每個資料二$狀結構),以計算不 料封包資料位元,而—/ 、^子集均包括大約一半的資 料部份重疊。產生的^固子集中的資料與其他子集中的資 或儲存的未經處理資二f : : ^ f $、ECC位元)結合要傳輸 果未經處理資料中有錯,=二貝料子集的方式為,如 ψ ^ λ, n . 、日、則θ將相同同位元計算所叶算 ==原始ECC位元以識別錯誤位元。 先刖技《 ECC機制針對資料完整性提供極佳 但是帶來許多技術上的困難。ECC計料放 大型同位元樹狀結構中,而每個同位元樹放; I的貝枓子集執仃不问的同位元計算。此類 的複雜佈線使ECC電路速度慢且複雜。 ==算所= 丨的性能降級通常限制了其應用。每種弁…计算所造成 I是針對特定資料大小進行;:。:巧==機制均 I’它必須重新設定Ecc機制。測試是另=559696 V. Description of the invention (1) The present invention relates to error correction Γ I for wide sound with variable data. In particular, the present invention relates to applications and applications. In addition, the device of the ECC circuit for error correction applies error correction circuits. 6 | ) 2 Correction of materials is to improve the application of data storage devices. It is widely used in communication systems or information systems. Block diagrams can be used to solve ECC computer instances. I have a fixed number of bits. The ECC computer calculates the data packet. It is transmitted from the predefined data tree structure (the bits in the ^ 丨 ^ ^) to a plurality of the same bits of the same data subset. Each data has a $ -like structure) to calculate the packet data bits, and the-/, ^ subsets include about half of the data partially overlapping. The data generated in the ^ solid subset is combined with the unprocessed assets in the other subsets or stored (f:: ^ f $, ECC bits). There is an error in the unprocessed data to be transmitted. The way of set is, such as ψ ^ λ, n., Day, then θ is calculated by the same parity == original ECC bit to identify the wrong bit. The ECC mechanism provided by Advanced Technology provides excellent data integrity but brings many technical difficulties. ECC counts and puts in a large parity tree structure, and each parity tree is put; the parity subset of I performs the parity calculation without asking. Such complex wiring makes ECC circuits slow and complicated. == 算 所 = Performance degradation usually limits its application. Each type of 弁 ... calculation is caused by a specific data size;:. : Qiao == both mechanisms I ’it must reset the Ecc mechanism. Test is another =

第5頁 559696 559696 五、發明說明(2) 藝ECC計算機 封包大小增加 E C C電路使用 因為擁有全錯 為 275< 2 72)測 因此,非 度彈性的高性 本發明之 ECC計算機。 同速度支援幾 ECC電路的速 E C C電路提供 本發明之 式中提供旋轉 電路組塊所建 係藉由簡化電 茲為使 功效有更進一 合詳細之說明 由於錯誤 明的說明將應 個機制。例如 D3卜 D24、 使用來自於除 g速度極端地取決於輸入資料模式 夺’一定會顯著減慢其速度。如 的複雜佈線的其中一個佈線有繫5 2 =技二 誤涵蓋範圍需要大*(如第以缺陷二則 =向量,所以偵測問題極為困‘ ^不的貝例 察希望開發結構簡單但具有支欠 能ECC機制。 矣不同貝枓見 ,要目的,在於提供一種具有簡化社 廷個簡化型ECC計算機可使用 ;^ :任何大小的資料封包。另一; 度。本發明的首要目的是使用太 適用於實用產品的新賴應用本發明新穎的 次要目的,在於提供一種藉由在八 關聯性來實現。產生的ECC電 二== = 料寬度可隨意延伸。高等性能 路結構來實現。 責審查委員對本發明之結構特徵 步之瞭解與認識,謹佐以較佳之實施例及配 ,說明如後: 修正機制的複雜度,在下文的討論中,本發 用c程式設計語言使用的陣列符號來說明這 D[3:2][4:l] 8 個符號 D34、 D33、 D32 D2 3、D2 2和D21的集合。符號r m〇d」代表 法運异的餘數部份的調節(m〇(juiati〇n)運Page 5 559696 559696 V. Description of the invention (2) The size of the ECC computer is increased. The use of the ECC circuit is increased because it has a total error of 275 < 2 72). Therefore, the non-elasticity of the ECC computer of the present invention is high. The speed E C C circuit that supports several ECC circuits at the same speed is provided by the invention. The rotating circuit block is provided in the present invention to simplify the electricity, so that the function can be further described in detail. Due to the error, the description will be based on a mechanism. For example, D3 and D24, the speed from g to g is extremely dependent on the input data mode, and it will definitely slow down its speed significantly. For example, one of the complex wiring is related to 5 2 = technical error coverage needs to be large * (such as the second defect = vector, so the detection of the problem is extremely difficult. ^ No, I want to develop a simple structure but have ECC mechanism is incapable. The main purpose of this article is to provide a simplified ECC computer that can be used. ^: A data packet of any size. Another; the primary purpose of the present invention is to use The new secondary application that is too suitable for practical products is a novel secondary purpose of the present invention, which is to provide a way to achieve by eight correlations. The generated ECC electric two == = material width can be extended at will. Higher performance road structure to achieve. The review committee understands and understands the structural features of the present invention, and I would like to describe the following with the preferred embodiment and configuration: The complexity of the correction mechanism. In the following discussion, the array used in the C programming language The symbol D [3: 2] [4: l] is a set of 8 symbols D34, D33, D32, D2 3, D2 2 and D21. The symbol rm〇d ”represents the adjustment of the remainder of the method difference (m 〇 (juiati〇n)

559696559696

五、發明說明(3) 算。例如,當 k = 7時 [(k + 3) mod 8]等於 2,而當 k = 1時,[(k - 3) mod 8]等於6。 「mod」功能係藉由 實際電路之輸入連接中的旋轉關聯性來實施。 於美國專利案號6, 2 1 6, 246中,本發明人發表一種如 第2 (a)圖所示的 ECC計算機。本範例中的 ECC計算機採 用64個輸入資料 〇)[7:0][7:0])。它包含8個完全一樣的 同位元電路組塊 (P 7 - P 0 )。第2 ( b)圖顯示同位元電路組塊 的方塊圖。每個同位元電路組塊(P7-P0)包括1 9個互斥 或(exclusive-or; X0R)閘極,一個 exclusive-nor 及 一個反相器。同位元電路組塊 P [ k ]採用資料 D [ k ] [ 7 :V. Description of the invention (3) Calculate. For example, [(k + 3) mod 8] is equal to 2 when k = 7, and [(k-3) mod 8] is equal to 6 when k = 1. The "mod" function is implemented by the rotation correlation in the input connection of the actual circuit. In U.S. Patent No. 6, 2 1 6, 246, the inventor published an ECC computer as shown in Fig. 2 (a). The ECC computer in this example uses 64 inputs 〇) [7: 0] [7: 0]). It contains 8 identical parity circuit blocks (P 7-P 0). Figure 2 (b) shows a block diagram of a parity circuit block. Each parity circuit block (P7-P0) includes 19 exclusive-or (X0R) gates, an exclusive-nor and an inverter. The parity circuit block P [k] uses data D [k] [7:

及儲存的ECC位元 Ck當作輸入,其中 k是介於 0到7 之間的整數。它將四個輸出 (ΝΠ、N22、N33、N41)傳送 至位於其上方的同位元電路’並且從位於其下方的同位元 電路接收對應的輸出(N11B、N22B、N33B、N41B)。它還將 二個輪出(即,N24、N32和 N42)傳送至位於其下方的同 位元電路,並且從位於其下方的同位元電路接收對應的輸 出(即,N2 4T、N24T和 N42T)。它還輸出修正因數Fk。可 將第k個同位元電路(P[k])的輸出邏輯函式撰寫成如下 所示: 仅1! = Parity{Ck, DkO} (la), N23 ^ Parity{Dk3, Dk4, Dk7} (lb), N33 = Parity{N23B, Dk2, Dk5, Dk6} (lc), N41 - Parity{N33B, N24T, Dkl, Dk4, Dk5} (Id), N24 = parity{Dk4, Dk5, Dk6, Dk7} (le),And stored ECC bits Ck as input, where k is an integer between 0 and 7. It transmits four outputs (NΠ, N22, N33, N41) to the parity circuit 'above it and receives corresponding outputs (N11B, N22B, N33B, N41B) from the parity circuit below it. It also transmits two rounds (ie, N24, N32, and N42) to the peer circuits below it, and receives corresponding outputs (ie, N2 4T, N24T, and N42T) from the peer circuits below it. It also outputs a correction factor Fk. The output logic function of the k-th parity circuit (P [k]) can be written as follows: Only 1! = Parity {Ck, DkO} (la), N23 ^ Parity {Dk3, Dk4, Dk7} ( lb), N33 = Parity {N23B, Dk2, Dk5, Dk6} (lc), N41-Parity {N33B, N24T, Dkl, Dk4, Dk5} (Id), N24 = parity {Dk4, Dk5, Dk6, Dk7} ( le),

第7頁 559696 五、發明說明(4) N32 = Parity{DkO, Dkl, Dk2, Dk3, Dk4, Dk5,Page 7 559696 V. Description of the invention (4) N32 = Parity {DkO, Dkl, Dk2, Dk3, Dk4, Dk5,

Dk6,Dk7} (If ), N42 - Parity{N32T, N11B: DkO.Dkl, Dk2, Dk3,Dk6, Dk7} (If), N42-Parity {N32T, N11B: DkO.Dkl, Dk2, Dk3,

Dk4, Dk5}(lg),以及Dk4, Dk5} (lg), and

Fk = Par i ty{N42T, N41B} (lh), 其中「Parity{}」表示包含於” {}"記號中所有輸入 的同位元值。附近電路所提供的輸入 (N11B、N22B、N33B 、N41B、N24T、N32T、N42T)可按照這些同位元電路完全 相同的事實來決定。例如,從等式 (1 a)可建立如下的函 式關聯性: N11B = Parity{C[(k+l) mod 8], D[(k+1) mod 8]〇l (2) 其中C[(k+1) mod 8]是儲存的ECC位元,而 D[(k+1) mod 8 ] 〇是連接至位於其下方之同位元電路的第一個資料 。所有其他的輸入(N22B、N33B、N41B,N24T、N32T、N42T )均可用類似的方式決定。依據第2 ( b )圖所示的連接及等 式(la-1 h),可進行下列計算:Fk = Par {ty {N42T, N41B} (lh), where “Parity {}” means the parity value of all inputs included in the “{} " notation. Inputs provided by nearby circuits (N11B, N22B, N33B, N41B, N24T, N32T, N42T) can be determined according to the fact that these homotopic circuits are exactly the same. For example, the following function correlation can be established from equation (1 a): N11B = Parity {C [(k + l) mod 8], D [(k + 1) mod 8] 〇l (2) where C [(k + 1) mod 8] is the stored ECC bit, and D [(k + 1) mod 8] 〇 is The first data connected to the same circuit below it. All other inputs (N22B, N33B, N41B, N24T, N32T, N42T) can be determined in a similar way. According to the connection shown in Figure 2 (b) And equation (la-1 h), the following calculations can be performed:

Fk = Parity{Ck,D[(k~2)raod8][7:0],D[(k-l)mod 8] [5:0], D[k][7:4, 0],D[(k+l)mod 8][5, 4, 1], D[(k+2) mod 8][6,5,2], D[(k+3) mod 8][7, 4, 3]} (3) 其中 1^(〇,1,2,3,4,5,6,7)。 如果輸入資料沒有錯誤,則(F k)信號全部為零。如果 輸入資料沒有錯誤D [ 7 ·· 0 ] [ 7 : 0 ]中有一個錯誤,則識別錯 誤位元的方式為,使用第2(c)圖所示的ECC解碼器來檢查Fk = Parity {Ck, D [(k ~ 2) raod8] [7: 0], D [(kl) mod 8] [5: 0], D [k] [7: 4, 0], D [( k + l) mod 8] [5, 4, 1], D [(k + 2) mod 8] [6,5,2], D [(k + 3) mod 8] [7, 4, 3] } (3) where 1 ^ (0,1,2,3,4,5,6,7). If there is no error in the input data, the (F k) signals are all zero. If there is no error in the input data D [7 ·· 0] [7: 0], the way to identify the error bit is to use the ECC decoder shown in Figure 2 (c) to check

第8頁 559696 五、發明說明(5) 修正因數(F0-Fk)。這個ECC解碼器包括8個ECC解瑪,組f (CB0-CB7)。這8個ECC解碼組塊具有完全一樣的邏輯功: ’如第2 ( d)圖中的原理圖所示。唯一的不同點是連奚F队 號的連接。再次,Fk連接中具有旋轉關聯性。例如,cB 1 的F1等於CBO的F0,而CB2的F2 of CB2也是F0, 一·等等三 這些ECC解碼組塊(CB0-CB7)的輸出(CR[7:0][7:0]#)指系· 錯誤位元的位置。如果CRi j#是低位準,則表示應翻轉Dkj 值’其中 k = (0,l,2, 3, 4, 5, 6,7)以及 j = (〇,1,2, 3, 4, 5, 6, 7) 第2 (a)圖中的相同電路可用來計算未經處理資料集的 ECC位元;會將零值指派給所有的Ck輸入,並且產生的 Fk會是如下所示的 ECC位元 ECC(k)=Parity{D[(k-2)mod 8][7:0],D[(k-l) mod 8 ] [ 5 : 0 ], D[k][7:4,0],D[(k+l) mod 8][5, 4, 1], D[(k + 2)mod 8][6, 5, 2],D[(k + 3) mod 8] [7, 4, 3]} (4) 其中 ECC(k)是 ECC位元值,而 k = (〇,i,2,3,4,5,6,7)。Page 8 559696 V. Description of the invention (5) Correction factor (F0-Fk). This ECC decoder consists of 8 ECC decoders, group f (CB0-CB7). These 8 ECC decoding blocks have exactly the same logical work: ′ As shown in the schematic diagram in Figure 2 (d). The only difference is the connection of the Flail F team numbers. Again, there is a rotation correlation in Fk connections. For example, F1 of cB 1 is equal to F0 of CBO, and F2 of CB2 of CB2 is also F0. The output of these ECC decoding blocks (CB0-CB7) (CR [7: 0] [7: 0] # ) Refers to the position of the error bit. If CRi j # is a low level, it means that the Dkj value should be reversed 'where k = (0, 1, 2, 3, 4, 5, 6, 7) and j = (〇, 1, 2, 3, 4, 5, 6, 7) The same circuit in Figure 2 (a) can be used to calculate the ECC bits of the unprocessed data set; a zero value will be assigned to all Ck inputs, and the resulting Fk will be the ECC bits shown below Meta ECC (k) = Parity {D [(k-2) mod 8] [7: 0], D [(kl) mod 8] [5: 0], D [k] [7: 4,0], D [(k + l) mod 8] [5, 4, 1], D [(k + 2) mod 8] [6, 5, 2], D [(k + 3) mod 8] [7, 4 , 3]} (4) where ECC (k) is the ECC bit value, and k = (0, i, 2,3,4,5,6,7).

第2 (a)圖至第2(d)圖所示之ECC機制的同位元計算旋 轉關聯性是項新穎的機制;C[k+1]的同位元計算是c[k] 簡單旋轉的結果。這個旋轉關聯性也適用於Ecc修正電路 。在本發明中’此類的ECC電路稱為「旋轉型Ecg計算機 (REC)」。REC電路與其他先前技藝ECC電路的不同點包The parity calculation rotation correlation of the ECC mechanism shown in Figures 2 (a) to 2 (d) is a novel mechanism; the parity calculation of C [k + 1] is the result of simple rotation of c [k] . This rotation correlation also applies to the Ecc correction circuit. In the present invention, such an ECC circuit is called a "rotary Ecg computer (REC)". Differences between REC circuits and other prior art ECC circuits

559696 五、發明說明(6) 括: (1 )先前技藝ECC電路使用不同的ECC樹狀結構來計算 不同的ECC位元’導致需要複雜的佈線連接複製的電路。 旋轉關聯性允許REC使用完全一樣的建置組塊來支援所有 的邏輯計算。設計複製度戲劇性地被簡化。 (2 )先前技藝ECC中的每個輸入資料均必須行進長距 離,才能到達多重同位元樹狀結構。針對REC,每個輸入 資料只需要行進到一個同位元電路組塊。這個戲劇性簡化 降低輸入信號的佈線複雜度,導致顯著改良速度。 (3) 中間邏輯信號(NU、N22、N33、N41,N24、N32、 N42)只需要行進到附近的同位元電路組塊。整個rEC電路 的任何部份均再也沒有任何長信號線或複雜的佈線。這就 是REC的速度一定顯著遠遠快於先前技藝ECC計算機的主 要原因。 (4) 由於旋轉對稱性,REC電路的速度幾乎與輸入資 料模式無關,明顯改良測試、除錯及最佳化程序。 REC的一項重要功能為,它可使用相同的重複電路支 援不同大小的輸入資料。第3圖所示之REC電路使用的電 路組塊與第2 ( a )圖所示的電路組塊完全一樣,以支援可變 長度的輸入資料。本實例中的ECC計算機採用N個輸入資 料(D[(N-1):0][7:0]),其中N是任意整數。它包含以旋 轉關聯性方式連接的N個完全一樣的同位元電路組塊(PN-1 - P0),如第3(a)圖所示。這些同位元電路組塊(PN-1-P0) 的邏輯功能與第2 (b )圖所示的同位元電路組塊邏輯功能完559696 V. Description of the invention (6) Including: (1) The prior art ECC circuit uses different ECC tree structures to calculate different ECC bits, which results in circuits that require complicated wiring connections to duplicate. Rotational associativity allows the REC to use exactly the same building blocks to support all logical calculations. Design reproduction is dramatically simplified. (2) Each input data in the prior art ECC must travel a long distance to reach the multiple parity tree structure. For REC, each input data only needs to travel to one parity circuit block. This dramatic simplification reduces the routing complexity of the input signal, resulting in a significant improvement in speed. (3) The intermediate logic signals (NU, N22, N33, N41, N24, N32, N42) only need to travel to the nearby parity circuit block. There is no longer any long signal lines or complicated wiring in any part of the entire rEC circuit. This is the main reason why RECs must be significantly faster than prior art ECC computers. (4) Due to the rotational symmetry, the speed of the REC circuit is almost independent of the input data mode, and the testing, debugging, and optimization procedures are significantly improved. An important feature of REC is that it supports the input data of different sizes using the same repeating circuit. The circuit block used in the REC circuit shown in Figure 3 is exactly the same as the circuit block shown in Figure 2 (a) to support variable-length input data. The ECC computer in this example uses N input data (D [(N-1): 0] [7: 0]), where N is an arbitrary integer. It contains N identical parity circuit blocks (PN-1-P0) connected in a rotational correlation manner, as shown in Figure 3 (a). The logic functions of these parity circuit block (PN-1-P0) are the same as the logic function of the parity circuit block shown in Figure 2 (b).

第10頁 559696 五、發明說明(7) 全一樣。等式(la-h)仍然適用,除了 k可能是介於0到 N- 1之間的任何數字以外。必須重寫等式(2-4) ’如下所示Page 10 559696 V. Description of Invention (7) It is the same. The equation (la-h) still applies, except that k may be any number between 0 and N-1. Equation (2-4) must be rewritten as shown below

NllB=Parity{C[(k+l)mod N],D[(k+l) mod N]〇} (5) Fk=Parity{Ck,D[(k-2) mod N][7:0],D[(k-1) mod N ] [ 5 : 0 ], D[k] [7:4, 0],D[(k+1) mod N][5,4,l], D[(k+2) mod N][6,5,2], D[(k+3) mod N][7,4, 3]} (6) ECC(k)=Parity{D[(k-2)mod N][7:0], D[(k-1) mod N][5:0], D[k][7:4,0],D[(k+l) mod N][5,4,l], D[(k+2)mod N][6,5,2], D[(k+3) mod N ] [ 7, 4, 3 ] } (7) 其中ECC(k)是ECC位元值,而k 、” i,—,u ^厂 具體而言,第2(a-d)圖所示的REC電路僅僅是(n = 8) 的特殊案例。可擴充REC電路以支援任何數量的輸入資料 集’其方式是實施如第3(a)圖所示的相同重複rEC建置組 塊。產生的電路將具有完全一樣的速度及完全一樣的電路 Ϊ 2、而不淪輸入資料集的寬度。不需要重新設計ECC計 拉八支援不同的資料寬度。針對不同類型的應用,還可 用曰。二2 t第3(b)圖所示的封閉迴路,以擴大本發明的應 明 > 考第3 (b)圖,圖中顯示的替代較佳具體實施例適NllB = Parity {C [(k + l) mod N], D [(k + l) mod N] 〇} (5) Fk = Parity {Ck, D [(k-2) mod N] [7: 0 ], D [(k-1) mod N] [5: 0], D [k] [7: 4, 0], D [(k + 1) mod N] [5,4, l], D [ (k + 2) mod N] [6,5,2], D [(k + 3) mod N] [7,4, 3]} (6) ECC (k) = Parity {D [(k-2 ) mod N] [7: 0], D [(k-1) mod N] [5: 0], D [k] [7: 4,0], D [(k + l) mod N] [5 , 4, l], D [(k + 2) mod N] [6,5,2], D [(k + 3) mod N] [7, 4, 3]} (7) where ECC (k) Is the ECC bit value, and k, "i,-, u ^ Factory specifically, the REC circuit shown in Figure 2 (ad) is just a special case of (n = 8). The REC circuit can be extended to support any The number of input data sets' is implemented by implementing the same repeated rEC building block as shown in Figure 3 (a). The resulting circuit will have exactly the same speed and the same circuit Ϊ 2. Without reducing the input data The width of the set. No need to redesign the ECC counter to support different data widths. For different types of applications, it can also be used. 2 2t Closed loop shown in Figure 3 (b) to expand the application of the invention > Consider FIG. 3 (b), the alternative preferred embodiment shown in the figure is suitable

559696 五、發明說明(8) 用於連續接收以預先定義資料(例如,標題記錄)開始及 結束的長傳入資料流的情況,這是數據通訊系統中經常遇 到的情況。如第3 ( b )圖所示,不使用如前面所示的封閉迴 路REC電路,而是實施串聯旋轉錯誤修正電路來連續接收 及處理資料流,以確保資料傳輸的修正。實施一種人工盤 繞邏輯電路 (artificial wrap around logic circuit; AWALC),其中執行錯誤碼計算的方式是,將簡化的位元模 式(如全部壹或全部零)饋送到開頭及尾端的REC計算機 組塊。在將固定位元模式輸入到這些組塊的情況下,錯誤 碼計算的執行方式類似於封閉迴路REC。開放迴路盤繞型 ECC計算機便於受控制或重設組態,以處理可變長度的資 料流,其方式是先傳送資料記錄的長度,然後供應對應的 E C C組塊數量,以執行錯誤碼計算。 雖然本文中已解說本發明的特定具體實施例,但是熟 知技藝人士應明白可進行其他的變更及修改。例如,可將 等式(1 - 7 )修改成不同的形式,而仍然維持旋轉關聯性。 同位元組塊可接取除了 8以外的不同輸入數量,並且輸出 不同數量的ECC位元及中間信號。本發明修正機制的新穎 元件是強制執行ECC機制同位元計算的旋轉關聯性。依據 旋轉關聯性,可使用重複的電路設計以簡化設計成品。較 高性能也是藉由降低佈線複雜度來實現。 依據前面的說明,本發明揭示一種用以變更一錯誤修 正碼(ECC)邏輯電路組態的方法,以執行已變更資料寬度 的錯誤檢查。該方法包括下列步驟:A)連續互相連接一組559696 V. Description of the invention (8) It is used to continuously receive a long incoming data stream that starts and ends with a predefined data (for example, a title record). This is a situation often encountered in data communication systems. As shown in Figure 3 (b), instead of using the closed loop REC circuit as shown above, a serial rotation error correction circuit is implemented to continuously receive and process the data stream to ensure the correction of data transmission. An artificial wrap around logic circuit (AWALC) is implemented in which the error code calculation is performed by feeding a simplified bit pattern (such as all one or all zeros) to the REC computer block at the beginning and end. In the case where a fixed bit pattern is input to these chunks, the error code calculation is performed similarly to the closed loop REC. Open-loop coiled ECC computers are easily controlled or reset to handle variable-length data streams by first transmitting the length of the data record and then supplying the corresponding number of ECC blocks to perform error code calculations. Although specific embodiments of the invention have been described herein, it will be apparent to those skilled in the art that other changes and modifications can be made. For example, equations (1-7) can be modified to different forms while still maintaining rotational correlation. The parity block can take different input numbers other than 8 and output different numbers of ECC bits and intermediate signals. The novel element of the correction mechanism of the present invention is the rotation correlation that enforces the ECC mechanism parity calculation. Depending on the rotation associativity, repeated circuit designs can be used to simplify the design of the finished product. Higher performance is also achieved by reducing wiring complexity. According to the foregoing description, the present invention discloses a method for changing the configuration of an error correction code (ECC) logic circuit to perform error checking of a changed data width. The method includes the following steps: A) consecutively interconnecting a group

第12頁 559696 五、發明說明(9) N1個完全一樣的錯誤檢查組 及’本方法進一步包括步驟^ J : N1是第-正整 成一組N2個連續互相連接)藉由將該ECC邏輯電从 ,…包 2 3的在較佳具體實施例中,:續::連i:N2是第 兀王一樣的錯誤檢查組塊的步驟是,只在 p魬N1個 檢查組塊之間互相連接該等N1個錯誤 ^ 2的錯鴿 以只在相鄰的錯誤檢查組塊之間傳輸作號、:二:步驟,用 該ECC邏輯電路變更成一組N2個連^ ς ^香藉由將 新組態ECC邏輯電路的牛驟曰0 、 要的電路來备 組塊之間互相連;誤錯4查重 在相鄰的錯誤檢查組塊之間傳輸信號。尾的步驟,用以只 ,備前述ECC保護機制的系統將b需要額外的 及更夕的貝枓儲存資源。這些額外的f源需求可電路 糸統成本。實際上,Ecc保護機制通常有助於降低二増加 品的整體成本。下文的討論中將說實汽用產 解說這些重點。 叩貝貫用的貫例,以 第-項實例是有關浮動閘極裝置的應用。帛 :ί 電晶體的對稱結構。這個電晶體包含源極’(s)不 及=(D)及閘極(G),就像常見的電晶體。差異在於)右 一"於閘極與通道區域之間的浮動閘極(FG) ^在大ς有 ^作Ϊ Ϊ Ϊ I會隔離浮動間^ ’於程式規劃或擦除作 "° s由”、、載體機制或隧穿機制,將電荷注入浮動^極 或移除浮動閘極中的電#。浮動閘極的導電率是浮動閘極Page 12 559696 V. Description of the invention (9) N1 identical error checking groups and 'This method further includes steps ^ J: N1 is the-positive integer into a group of N2 consecutively connected to each other) From, ... in the preferred embodiment of package 23 :: continued :: even i: N2 is the same as the king of the error checking block, the steps are to connect only p 魬 N1 checking blocks to each other The N1 errors ^ 2 of the wrong pigeon are transmitted only between adjacent error-checking blocks as a number, two: steps, using this ECC logic circuit to change into a group of N2 connections ^ ς ^ Xiang by the new The configuration of the ECC logic circuit is 0, and the necessary circuits are used to prepare the interconnections between the blocks; errors and errors 4 are checked to transmit signals between adjacent error-checking blocks. The last step is to use only the system that prepares the aforementioned ECC protection mechanism will require additional and later storage resources. These additional f-source requirements can reduce system cost. In fact, the Ecc protection mechanism usually helps to reduce the overall cost of Erjiao supplements. These discussions will be explained in the following discussion. The example used by Wu Beiguan, the first example is about the application of floating gate device.帛: ί The symmetrical structure of the transistor. This transistor contains source (s) less than = (D) and gate (G), just like common transistors. The difference is that the first one is the floating gate (FG) between the gate and the channel area. ^ There are ^ works Ϊ Ϊ Ϊ I will isolate the floating room ^ 'Programming or erasing work " ° s From the ", carrier mechanism or tunneling mechanism, the charge is injected into the floating electrode or the electricity in the floating gate is removed. The conductivity of the floating gate is the floating gate

559696 五、發明說明(ίο) (FG)中截獲的電荷總數的函式。因此,藉由變更浮動閘 極中截獲的電荷總數,就可在浮動閘極中儲存資料。如 EPROM、EEPROM及FLASH之類的許多商用產品已建置於浮動 閘極裝置上。浮動閘極裝置最困難的可靠度問題是電荷損 失(QL)問題及程式規劃(pe)循環感應錯誤。QL通常是因環 繞浮動閘極之絕緣體附近的製造缺陷所造成。製造缺陷會 導致浮動閘極發生小:¾漏,以至於裝置因損失截獲的電何559696 V. Function of the total charge intercepted in the description of the invention (ίο) (FG). Therefore, by changing the total amount of charge intercepted in the floating gate, data can be stored in the floating gate. Many commercial products such as EPROM, EEPROM and FLASH have been built on floating gate devices. The most difficult reliability problems of floating gate devices are charge loss (QL) problems and programming cycle (pe) cycle induction errors. QL is usually caused by manufacturing defects near the insulator surrounding the floating gate. Manufacturing defects will cause small floating gates: leakage, so that the device intercepts electricity lost due to losses.

而無法維持資料。QL問題通常不會對浮動閘極裝置造成永 久性損壞;如果將資料重新寫入到故障的裝置,則會維持 功能達一段時間,直到它截獲的電荷漸漸洩漏。PE#環感 應錯誤通常屬永久性。當使用者執行程式以擦除浮動閘極 裝置多次時,流經浮動閘極裝置的高能量電荷會造成其附 近的組件損壞,以至於裝置會在某PE循環之後故障。一般 的浮動閘極裝置一定具有極佳的容錯能力以符合QL和PE循 環需求;故障通常是由製造缺陷所造成。現行技術浮動閘 極產品包含上百萬個記憶單元,而QL和PE#環容錯能力係 按,、、、這歲百萬個δ己憶單元的最壞位元來決定。因此,使用 ECC來保護浮動閘極產品能夠顯著改良可靠度。受ECC保護 =裝置的可靠度特性再也不是按照裝置中的最壞位元來決 疋。而是按照裝置的本質特性來決定;產生的產品通常顯 了罪。當所儲存資料錯誤時’ ECC電路還能夠知道修 正資料。因此,能夠修正問題來源,而不是只修正輸出。 ^ 5顯不ECC自我修復程序的流程圖。這個自我修復程序 可藉由如電腦軟體之類的外部系統啟動之。它也可内部啟No data can be maintained. QL problems usually do not cause permanent damage to the floating gate device; if data is rewritten to the failed device, it will maintain function for a period of time until the charge it intercepts gradually leaks. PE # ring-sensing errors are usually permanent. When a user executes a program to erase the floating gate device multiple times, the high-energy charge flowing through the floating gate device can cause damage to nearby components, so that the device will fail after a PE cycle. General floating gate devices must have excellent fault tolerance to meet QL and PE cycle requirements; faults are usually caused by manufacturing defects. Current technology floating gate products contain millions of memory cells, and QL and PE # ring fault tolerance are determined by the worst bit of a million delta memory cells. Therefore, using ECC to protect floating gate products can significantly improve reliability. Protected by ECC = The reliability characteristics of the device are no longer determined by the worst bit in the device. Rather, it depends on the nature of the device; the resulting product is often sinful. When the stored data is wrong, the ECC circuit can also know the correction data. Therefore, it is possible to fix the source of the problem, not just the output. ^ 5 shows the flowchart of the ECC self-healing procedure. This self-healing process can be initiated by an external system such as computer software. It can also start internally

第14頁 559696 五、發明說明(π) 動,然而外部使用者不知道它ρ啟勤 化週期期間可叫用程序執行,或使用^: 1於開機初始 序。假設已將ECC位元與未智處理資^、态仏號來觸發程 置中。在啟動自我修復程序:;里;= 及關聯的ECC位元。ECC電路係用來檢查;; 否有任何錯誤。如果沒有錯帛,則錯誤檢查作業進行到下 一資料集,直到程序完成。如果發現錯誤,且ecc盔法修 正錯誤,則裝置會將警示信號傳送至系統。如果㈣、能夠 修正問題,則會將已修正資料位元寫回至儲在 因諸如浮動間極裝置中電荷損失問題之類的軟錯誤而造成 問題,或因《粒子而造成問題,則可藉由將正確資料寫回 至記憶裝[就可解決問題。應讀取並再次檢查錯誤的資 料。如果已解決問題’則錯誤碼檢查作業現在可進行到處 理下一資料集。如果無法藉由寫回正確資料來解決問題处 則可實施可程式規劃冗餘電路,以解決因錯誤記7隱單元所 造成的問題。如果冗餘電路可解決問題,則錯誤^查$業 進行到下一資料集。如果冗餘電路無法解決問題,&產品 仍然可正常運作,這是因為使用者能夠在ECC修正之後= 得正確資料。然而,如果ECC修正非常多的錯誤,則襄^ 可能快要嚴重故障。可實施計數器來計算已修正錯誤^數 量。如果數量大於預先定義值,則會產生警示信號,以通 知系統使用者。前面的自我修復程序不限定於使用本發明 的REC電路。無論如何,甚至先前技藝ECC電路可能能夠執 行類似的功能,本發明REC的優點為,顯著縮小增加ecc電Page 14 559696 V. Description of the invention (π), but the external user does not know that it can be called by a program during the start-up cycle, or use ^: 1 in the initial sequence of startup. It is assumed that the ECC bit and the unprocessed data have been used to trigger the program. In starting the self-healing procedure: ;;; and the associated ECC bit. The ECC circuit is used to check; whether there are any errors. If there is no error, the error checking operation proceeds to the next data set until the procedure is completed. If an error is found and the ecc helmet correction is incorrect, the device sends a warning signal to the system. If the problem can be corrected, the corrected data bits will be written back to a problem caused by a soft error such as a charge loss problem in a floating interpolar device, or a problem caused by "particles. The problem can be solved by writing the correct information back to the memory pack [. The incorrect data should be read and checked again. If the issue is resolved ’, the error code check operation can now proceed to the next data set. If the problem cannot be solved by writing back the correct data, a programmable redundant circuit can be implemented to solve the problem caused by incorrectly recording 7 hidden units. If the redundant circuit can solve the problem, check the error and proceed to the next data set. If the redundant circuit does not solve the problem, the & product can still work normally, because the user can get the correct data after the ECC correction. However, if the ECC corrects a large number of errors, it is likely that serious failures will soon occur. A counter can be implemented to count the number of corrected errors ^. If the quantity is greater than a predefined value, a warning signal is generated to notify the system user. The foregoing self-repair procedure is not limited to the use of the REC circuit of the present invention. In any case, even prior art ECC circuits may be able to perform similar functions, the advantage of the REC of the present invention is that the ecc power is significantly reduced and increased.

第15頁 559696 五、發明說明(12) 路所需的面積,同時增加錯誤碼檢查作業的速度。 依據前面的說明,本發明進一步揭示一種操作一包括 ,數個記憶單元之記憶裝置的方法。本方法包括步驟^執 行該等記憶單元的錯誤檢查。以及,步驟B )修復一錯存一 錯誤資料位元的錯誤記憶單元。在較佳具體實施例中^修 復一錯誤記憶單元的步驟進一步包括,藉由將一正確位^ 寫入至該錯誤記憶單元以自動修復該錯誤記憶單元的步驟 雖然 知技藝人 的應用來 可能不要 復。還可 性是在緊 况下偵測 之。例如 。任何儲 用不限定 實施 由於提高 具成本效 多資料。 電荷總數 料的兩位 本文中 士應明 變更自 使用寫 採用其 張狀況 潛在的 ’可能 存裝置 於浮動 ECC保 良率及 益。還 例如, ,所以 位元, 已解說 白可進 我修復 回修復 他類型 下進行 錯誤, 以較低 或系統 閘極裝 護或自 /或提 可利用 定義四 現在可 而不是 本發明的 行其他的 程序的細 機制,另 的修復, 自我修復 並且在這 電壓或較 均可實施 置。 我修復機 高可靠度 可靠度改 個類比仅 使用一個 一位位元 特定具體實施 變更及修改。 節。例如,其 一項應用可能 如時序調整。 程序,以便在 些錯誤造成問 高溫度執行自 前面的方法。 例,但是熟 可針對不同 中一項應用 沒有冗餘修 另一種可能 正常運作狀 題之前修復 我修復程序 本方法的應 制將需要額外資源,但是 ’因而產生的產品可能更 良以在同一裝置中運載更 準來表示浮動閘極截獲的 記憶單元來儲存二進位資 。第2(a)圖顯示這個多重Page 15 559696 V. Description of the invention (12) The area required for the road and increase the speed of error code checking operation. According to the foregoing description, the present invention further discloses a method for operating a memory device including a plurality of memory units. The method includes step ^ to perform error checking of the memory units. And, step B) repairing a wrong memory unit storing a wrong data bit by mistake. In a preferred embodiment, the step of repairing an erroneous memory unit further includes the step of automatically repairing the erroneous memory unit by writing a correct bit ^ to the erroneous memory unit, although the application by a skilled artist may not complex. The survivability is detected under tight conditions. E.g . Any storage is not limited to implementation due to improved cost-effective information. The total number of charges is expected to be two. The clerk in this article should be changed from using writes to adopting their potential conditions. Potential 'may be stored in floating ECC yield and benefits. Also for example, so bit, has been explained Bai Kejin I repaired it back to repair other types of errors, with lower or system gate protection or self / or available using definition IV now available instead of the line of the invention other The fine mechanism of the program, other repairs, self-healing and implementation at this voltage or less can be implemented. I repair machine High reliability Reliability change An analogy uses only a single bit Specific implementation changes and modifications. Section. For example, one application might be timing adjustment. Procedure to perform the above method in case of errors caused by high temperature. For example, but can be used for different applications without redundancy to repair another problem that may work normally. Fix it before I fix the procedure. The method of this method will require additional resources, but 'the resulting product may be better on the same device. The medium carrier is more accurate to indicate the memory cell intercepted by the floating gate to store binary data. Figure 2 (a) shows this multiple

第16頁 五、發明說明(13) 位 示 預 ί ϊΐ:】枓!mdie ievei duitai —a; mldd)表 先定義值(Q3)(:,J極f置中2已截獲電荷⑻大於 3 < Q1,則會儲存二進位‘料子—進位資料(0,1);如果 是與感測電路觸發位準有關 I ),其中扣、92及Q1 > Qi。…個方法=;預上義值H > Q2 可儲存雙倍的資料量,於此際D隐早兀相比時,這個方法 2護藉由修正錯誤而使此類;法3 :度增加四倍。ECC 錯誤,可使本發明的自我修復1、貫用價值。藉由修復 =的MLDD表示法有—個問題。如^ 士可靠。第2(a)圖所 儲存資料是(1,0),並且裝置浐果备Q3 > Q > Q2時原始 ”卜則資料會變成(〇1)\由%失某些電荷以至於Q2 > Q 有兩位二進位位元變更’。ECC仅少量電荷損失,導致可能 j則,需要兩個分開的ECC電,必須能夠修正兩位位元 。故兩種方法均需要多 路以分別保護這兩位位元 f,定義為如第2(a)圖所示的表如果將兩位元MLDD表示法 而求。針對每個較高二7^法,則可減少這項資源 上位元。因此,將次,兩、位資料決不會變更一位以 2方法可應用於第6(:)圖ΐί二修復小型電荷損失。類 及第6(d)圖所*的16位準4位元,8位準3位元實例,以 第6(e)圖顯示依 貫例。 數位資料轉譯之電路 )圖所示之表格來實施類比轉 口。比較器(651)將類比信號5. Description of the invention on page 16 (13) Predicated ί:] 枓! Mdie ievei duitai —a; mldd) The table first defines the value (Q3) (:, J pole f centered 2 has intercepted the charge ⑻ greater than 3 < Q1, will store binary 'material-carry data (0, 1); if it is related to the sensing circuit trigger level I), among which deduction, 92 and Q1 > Qi. … Methods =; pre-sensing value H > Q2 can store double the amount of data. At this time, when D is compared earlier, this method 2 protects this class by correcting errors; method 3: degree increases Four times. ECC errors can make the present invention self-repair 1. Consistent value. There is a problem by fixing the MLDD notation of =. Such as ^ Shi reliable. The data stored in Figure 2 (a) is (1,0), and the device is ready for Q3 > Q > Q2. The original data will change to (〇1) \% of some charge is lost to Q2 > Q has two binary bit changes'. ECC has only a small amount of charge loss, which may result in j. Two separate ECC circuits are required and must be able to correct two bits. Therefore, both methods require multiple paths to separate The protection of these two bits f is defined as the table shown in Figure 2 (a) if the two-bit MLDD representation is required. For each higher two 7 ^ method, the upper bits of this resource can be reduced. Therefore, the second, second, and third data will never be changed. One method can be applied to Figure 6 (:) to repair the small charge loss in the second method. The class and the 16-bit quasi-four bits in Figure 6 (d) * 8-bit quasi 3-bit example, shown in Figure 6 (e). The circuit shown in Figure 6) is used to implement the analog re-export. The comparator (651) converts the analog signal.

559696 五、發明說明(14) (Q)比對預先定義值(Q3,Q2,Q1)。例如,如果 Q > Q1, 則第一比較器 (CP 1)的輸出為 1,而如果 Q < Q卜則其 輸出為0 ;如果 Q > Q2,則第二比較器(CP2)的輸出為1 ,而如果 Q < Q2,則其輸出為 0;如果 Q > Q3,則第三 比較器(CP3)的輸出為1 ,而如果Q < Q3,則其輸出為〇 。將比較器的輸出(CP3, CP2, CP1)傳送至解碼器( 6 5 2 ) 電路。編碼器(6 5 2 )提供兩位數位輸出位元 (D 1,D 0 )。如 果 CP3 = CP2 = CP1 = 1,則(Dl, DO)值為(1,〇);如 果 CP3 = 〇,且 CP2 = CP1 = 1,貝ij (Dl, D〇)值為(1, 1)’如果〇?3 = 〇?2 = 0,且〇卩1 = 1,則(1)1,1)0)值559696 V. Description of the invention (14) (Q) Compare the predefined values (Q3, Q2, Q1). For example, if Q > Q1, the output of the first comparator (CP 1) is 1, and if Q < Q, the output is 0; if Q > Q2, then the output of the second comparator (CP2) The output is 1, and if Q < Q2, its output is 0; if Q > Q3, the output of the third comparator (CP3) is 1, and if Q < Q3, its output is 0. The outputs of the comparators (CP3, CP2, CP1) are passed to the decoder (6 5 2) circuit. The encoder (6 5 2) provides two digit output bits (D 1, D 0). If CP3 = CP2 = CP1 = 1, then the (Dl, DO) value is (1, 0); if CP3 = 〇, and CP2 = CP1 = 1, Beij (Dl, D0) value is (1, 1) 'If 〇? 3 = 〇? 2 = 0 and 〇 卩 1 = 1, then (1) 1, 1) 0) value

為(〇,1);如果 CP3 = CP2 = CP1 = 0,則(Dl, D0)值 為(0, 〇)。第6(C)圖及第6(d)圖所示的表各可在類似的 路中實施。 據前面的 元的記憶 個電荷的 輯電路, 全一樣之 儲存錯誤 一多重位 種電荷位 進位位元 一多重位 中的至少 進一步揭示一種包括複數個 單元均具有一用來儲 步包括一錯誤 續互相連接的 等記憶單元中 記憶裝置進一 動閘極上供應 單元中的至少 記憶裝置進一 儲存於該等浮 於該等記憶單 依 記憶單 存複數 檢查邏 •組完 的資料 步包括 至少兩 兩位二 步包括 動閘極 裝置, 浮動閘 該錯誤 錯誤檢 。在較 準電壓 準,以 。在較 準電荷 兩種電 本發明 其中每 極。該 檢查邏 查組塊 佳具體 裝置, 表不儲 佳具體 感測裝 荷位準 個記憶 記憶裝 輯電路 ,用以 實施例 用以在 存於該 實施例 置,用 ’以偵 置進一 包括連 檢查該 中,該 該等浮 等記憶 中,該 以偵測 測儲存Is (0, 1); if CP3 = CP2 = CP1 = 0, the value of (D1, D0) is (0, 〇). The tables shown in Figs. 6 (C) and 6 (d) can each be implemented in a similar way. According to the previous circuit for storing the charge, the same storage error-multiple bit charge bit carry bit-at least one of the multiple bits further reveals that a plurality of cells have a Incorrectly connected to other memory units, the memory device is moved to the gate. At least the memory device in the supply unit is further stored in the floats. The memory sheets are stored according to the memory sheet to check the logic. The completed data steps include at least two two The second step includes the moving gate device, and the floating gate detects the error. At the calibration voltage, use. The two kinds of electricity in the present invention are relatively accurate. The inspection logic checks the block specific device, which indicates that the specific sensing load level is a memory memory editing circuit, which is used in the embodiment to store in this embodiment, and is used to detect a further including a connection. Check the memory, the float memory, etc.

第18頁 559696Page 18 559696

元中的至少 ,該多重位 用以依據該 產生一位元 式裝置進一 ,其中依據 元不同於代 的第二位元 兩位二進仇 準電荷感测 多重位準電 模式。在另 步提供依據 一第一電荷 表一連續相 模式。 位元。在另 裝置進一步 荷感測襄置 一項較佳具 該電荷位準 位準的每個 鄰該第一電 一項較佳具 包括一位元 所感剛到的 體貫施彳列巾 來產生一位 位元模式只 荷位準之第 體實施例中 模式裝置’ 電荷位準來 ,該位元模 元模式序列 有一單一位 二電荷位準 雖然本文中已解說本發明 知技藝人士應明白可進行其他 可適用在使用其他類型參數的 能是如電壓或電流之類的任何 的電荷。裝置也不一定是浮動 的特定具體實施例,但是熟 的變更及修改。前面的方法 其他類型裝置。例如,Q可 類比參數,而不一定是截獲 閘極裝置。At least of the elements, the multiple bit is used to generate a one-bit device based on the second bit, wherein the second bit is different from the second bit of the generation. Two-bit binary quasi-charge sensing multiple-level electrical mode. The basis for a further charge is provided in a further continuous phase mode. Bit. In another device, further sensing is performed to set one item each having the charge level level adjacent to the first item. The first item preferably includes a body to apply a row of towels to generate one. The bit mode only has the charge level in the first embodiment of the mode device. The bit mode pattern sequence has a single-bit two-charge level, although those skilled in the art should understand that the present invention can be performed. Other charges that can be applied using other types of parameters can be any charge such as voltage or current. The device is not necessarily a specific embodiment of the float, but is well-known for changes and modifications. Previous method Other types of devices. For example, Q can be an analog parameter, not necessarily an intercepting gate device.

m f :項實施實例是有關内容可定址記憶體(CAM)的應 用。第顯示先前技藝CAM裝置的基本結構。CAM裝置 中儲存兩種貧料—儲存於典型隨機存取記憶體(RAM)陣列 (703 )中的通用數位資料,以及儲存於(:龍陣列(7〇1)中的 定址資料(在ic產業中稱為「TAG」)。第7(b)圖顯示RAM陣 列(7 0 3 )中典型記憶單元的原理圖。這個記憶單元使用四m f: An implementation example is an application related to content addressable memory (CAM). The basic structure of the prior art CAM device is shown. Two types of lean materials are stored in the CAM device—general-purpose digital data stored in a typical random access memory (RAM) array (703), and addressing data stored in (: Dragon Array (701)) (in the IC industry) (Referred to as "TAG"). Figure 7 (b) shows a schematic diagram of a typical memory cell in a RAM array (703). This memory cell uses four

個電晶體(MpO,Mpl,MnO,Mnl)來構成用來儲存資料的雙 穩態鎖定器’以及兩個電晶體(M w,M w #),用以透過字線 (WL)來選取記憶單元。第7(c)圖顯示CAM陣列(701)中典型 記憶單元的原理圖。這個記憶單元類似於RAM單元,除了 它有四個附加的電晶體(Mc〇, Mel, McO#, Mcl#),用以構Transistors (MpO, Mpl, MnO, Mnl) to form a bistable locker for storing data, and two transistors (M w, M w #) for selecting memory through a word line (WL) unit. Figure 7 (c) shows a schematic diagram of a typical memory cell in a CAM array (701). This memory cell is similar to a RAM cell, except that it has four additional transistors (Mc0, Mel, McO #, Mcl #) to construct

559696559696

形一個XOR閘極,以比較位於位元線(BL,BL#)上的新tag 與儲存資料(cc,cc#)。如果儲存資料及位元線值不同, 則會拉下未點到線路(MISS#)的位準。CAM陣列(701)中的 每列均包括複數個CAM單元,這些CAM單元的MISS#線連接 在一起。§儲存TAG之一列中任何一位位元不同於已查詢 的TAG時,則Μ I SS#線會處於低位準狀態。每TAG列的M I 線( 70 5 )是用來控制一對應RAM列的字線(WL)。只有所選列 儲存的TAG與查詢TAG相同時,才能從RAM陣列讀取其儲存 的資料。第7(a)圖所示的CAM裝置是一種功能強大的裝置 ’其能約同時查詢大量儲存位址,並且使用正確位址讀出 所要的資料。這由這項平行查詢作業,所以先前技藝CAM 沒有ECC保護。為了確保TAG查詢結果正確,於查詢處理程 序期間,必須確保整個TAG陣列沒有任何錯誤的位元。因 此,CAM陣列的每列均需要一個Ecc計算機,這樣的成本太 咼’且ECC保遵不具實用性。因此,先前技藝產品通常 由於可靠度問題而失敗,如α粒子感應軟錯誤。 但是,基於在CAM查詢作業中提供ECC保護的實用目的 ,因而實現不需要同時ECC保護CAM中的所有列。而且,因 為後續作業只使用匹配的資料位元流,所以只需要保護於 CAM查詢期間匹配的列。第8(a)圖顯示受ECC保護之CAM的 方塊圖。這個CAM裝置仍然具有相同的CAM陣列(801 )以進 行TAG查詢,以及相同的RAM陣列( 8 03 )以儲存資料。CAM陣 列(8 0 1 )及RAM陣列(8 0 3 )使用的結構及記憶單元與第7 (a ) 圖、第7(b)圖及第7(c)圖所示的結構及記憶單元完全相同Shape an XOR gate to compare the new tag on the bit line (BL, BL #) with the stored data (cc, cc #). If the stored data and bit line values are different, the level of the unpointed line (MISS #) will be pulled down. Each column in the CAM array (701) includes a plurality of CAM cells, and the MISS # lines of these CAM cells are connected together. § When any bit in one of the stored TAG columns is different from the queried TAG, the M I SS # line will be at a low level. The MI line (705) of each TAG column is used to control a word line (WL) corresponding to a RAM column. Only when the TAG stored in the selected row is the same as the query TAG, the stored data can be read from the RAM array. The CAM device shown in Fig. 7 (a) is a powerful device. It can query a large number of storage addresses at the same time and read out the required data using the correct address. This is done by this parallel query operation, so the prior art CAM has no ECC protection. To ensure that the TAG query result is correct, during the query processing procedure, it must be ensured that the entire TAG array is free of any wrong bits. Therefore, each column of the CAM array requires an Ecc computer, which is too costly and the ECC guarantee is not practical. Therefore, prior art products often fail due to reliability issues, such as alpha particle sensing soft errors. However, based on the practical purpose of providing ECC protection in CAM query jobs, it is not necessary to implement ECC protection for all columns in the CAM at the same time. Moreover, because subsequent operations use only matching data bit streams, only the columns that match during the CAM query need to be protected. Figure 8 (a) shows a block diagram of an ECC protected CAM. This CAM device still has the same CAM array (801) for TAG query and the same RAM array (803) for storing data. The structure and memory unit used in the CAM array (801) and the RAM array (803) are completely the same as those shown in Figures 7 (a), 7 (b), and 7 (c). the same

第20頁 559696Page 559 696

。針對每組TAG資料集,由ECC電路計算的 於CAM陣列(80 7)中。這個ECC CA 二卩C位元均儲? 列⑽"分開或合併。· 8(M圖顯示=7與=CAM陣 之CAM的查詢程序流程圖。於查詢期 么第8(a)圖所不 ECC位元。如果沒有匹配,照例由系 曰比較TAG及其 果有一個TAG匹配且其ECC位元也匹配、、、,=行通知作業。如 資料的資料傳輸。如果有一個TAG匹則照例執行已匹配 ’則表示這是錯誤匹配。這必須通知”财位元不匹配 誤匹配’並將之視為不匹配。可 決二:=項: 方式是將ECC陣列決定正確值寫 、問蟪的旨试,其 陣列中找到一個以上TAG匹配,則且^陣列。如果在TAG 是真正的匹配。只會傳輸正確的資料CC匹配的TAG匹配 復錯誤TAG的作業,並且將通知傳 凡流,也會執行修 錯誤及修正事件。RAM陣列也糸統,以告知資料 護崎料。另-項實例是在_陣列元來: 不是儲存在CAM陣列中,如第 2儲存ECC位兀,而. For each TAG data set, the ECC circuit calculates it in the CAM array (80 7). The two ECC CA bits are stored in the "list" separately or combined. 8 (M picture shows the flow chart of the CAM query procedure of = 7 and = CAM array. During the query period, the ECC bit in Figure 8 (a) is not displayed. If there is no match, the TAG and its result are compared by the system as usual. A TAG matches and its ECC bits also match ,,,,, and = to notify the operation. For example, the data transmission of the data. If there is a TAG, then the matching is performed as usual ', which means that this is an incorrect match. This must notify the "bit Mismatch Mismatch 'and treat it as a mismatch. Decidable two: = item: The method is to write and ask the ECC array to determine the correct value. If more than one TAG match is found in the array, then ^ array. If The TAG is a true match. Only the correct data will be transmitted. The CC matched TAG matches the error TAG operation, and the Chuan Fan stream will be notified. Error repair and correction events will also be performed. The RAM array is also standardized to inform the data protection.料 料. Another example is in the _ array element: instead of being stored in the CAM array, such as the second storage ECC bit, and

第8(d)圖所示。於TAG查詢期間,口圖斤不。其查詢程序如 配,照例由系統執行找不到匹配的通較TAG。如果沒有匹 匹配,則會從RAM陣列讀取資料 ^ :如果有一個TAG 護這兩者。ECC計算之後,如果;AECC計算,以保 到錯誤1必須通知系統,以。如果_貞測 視為不匹㈤。可執行解決問 ;項:誤匹配,並將之 J旨武’其方式是將ECC陣Figure 8 (d). During the TAG query period, the picture is not good. If the query procedure is matched, as usual, the system executes and finds no matching general comparison TAG. If there is no match, the data will be read from the RAM array ^: If there is a TAG to protect both. After ECC calculation, if; AECC calculation, to ensure that error 1 must be notified to the system. If _zhentest is considered not to be a match. Can be used to solve the problem; item: mismatch, and J Jie Wu ’the way is to ECC array

559696 五、發明說明(18) 列決定正確值寫回 使用的資源少於第 TAG陣列中找到多 域哪一個匹配是正 依據前面的說 記憶體(CAM)裝置 容的複數個記憶單 配來提供對一陣列 錯誤檢查邏輯電路 取錯誤。在較佳具 錯誤碼儲存裝置, 個記憶單元陣列的 個記憶單元陣列的 例中,每個記憶單 產生的一錯誤碼檢 陣列的資料存取錯 誤碼儲存裝置是一 該錯誤檢查邏輯電, 檢查(ECC)位元, 錯誤。 綜上所述,本^ 尤其,本發明與適j 的ECC電路之裝置』 性、進步性及可供』 明係有關於錯誤 於具有可變資料 應用有關。故本 業利用者,應符 至CAM及RAM陣列。第8(c)圖所示之實例 8 ( a )圖所示之貫例使用的資源^如果在 重匹配則第8(c)圖所示的結構無法區 確的匹配。 明’本發明進一步揭示一種内容可定址 έ亥CAM記憶裝置包括用以餘存一陣列内 元陣列,用以依據一與該陣列内容的氐 的資料存取。該CAM裝置推 水a从〆 ,用以檢查每個記憶單存 體實施例中,該CAM裝置進—步包括一 用以儲存該錯誤檢查邏輯電路^用之每 碼檢查(ECC)^,用以檢查每 貝瞌二Ϊ錯块。在另—項較佳具體實施 杳 Γ 檢查邏輯電路 :(EfC)位兀’用以檢查每個記憶單元 ί祕Ϊ另一項較佳具體實施例中,該錯 通機存取記憶體(RAM)裝置’用以儲存 各使用之每個記憶單元陣列的一錯誤碼 有以彳W查每個記憶單元陣列的資料存取 修正碼(ECC)有關。 寬度之資料錯誤修正 發明實為一具有新穎 合我國專利法所規 559696 五、發明說明(19) 之專利申請要件無疑,爰依法提出發明專利申請,祈 鈞 局早日賜准專利,至感為禱。 惟以上所述者,僅為本發明之一較佳實施例而已,並 非用來限定本發明實施之範圍,舉凡依本發明申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修飾 ,均應包括於本發明之申請專利範圍内。 圖號簡單說明: 6 5 1比較器 6 5 2解碼器 701 CAM陣列 703 RAM陣列 705 MISS# 線 801 TAG CAM 陣列 803 RAM陣列 807 ECC CAM 陣列559696 V. Description of the invention (18) The column determines that the correct value is written back. The resource used is less than the number of multiple domains found in the TAG array. Which match is directly based on the multiple memory single allocations of the memory (CAM) device capacity. An array error check logic circuit takes errors. In an example of a memory cell array with an error code storage device and a memory cell array, a data access error code storage device of an error code detection array generated by each memory list is an error checking logic circuit. (ECC) bit, error. In summary, the present invention, in particular, the device of the present invention is suitable for ECC circuits, which is progressive, and available. It is related to errors and applications with variable data. Therefore, users in the industry should use CAM and RAM arrays. The example shown in Fig. 8 (c) uses the resources shown in the conventional example shown in Fig. 8 (a) ^ If the matching is repeated, the structure shown in Fig. 8 (c) cannot be matched accurately. The present invention further discloses that a content-addressable CAM memory device includes a memory array for storing an array, and is used for accessing data based on a frame of content with the array. The CAM device pushes water from the memory to check each memory single bank. In the embodiment, the CAM device further includes a code-per-check (ECC) for storing the error-checking logic circuit. In order to check the wrong block per shell. In another preferred embodiment, the inspection logic circuit: (EfC) bit is used to check each memory unit. In another preferred embodiment, the fault machine accesses the memory (RAM ) The device 'is used to store an error code of each memory cell array used in order to check the data access correction code (ECC) of each memory cell array. The width of the error correction of the invention is indeed a novel invention that complies with the provisions of the Chinese Patent Law 559696. 5. The patent application requirements of the invention description (19) are undoubted. I have filed an application for an invention patent according to the law. . However, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of implementation of the present invention. For example, changes in shape, structure, characteristics, and spirit according to the scope of the patent application for the present invention are equivalent. Modifications shall all be included in the scope of patent application of the present invention. Brief description of drawing number: 6 5 1 comparator 6 5 2 decoder 701 CAM array 703 RAM array 705 MISS # line 801 TAG CAM array 803 RAM array 807 ECC CAM array

第23頁 559696 圖式簡單說明 第1圖:顯示先前技藝 ECC電路的方塊圖; 第2 ( a )圖:顯示實施本發明之ECC組塊之間旋轉關聯性的 原理圖; 第2(b)圖:顯示第2(a)圖所示之ECC組塊的原理圖; 第2(c)圖:顯示本發明 ECC解碼器的結構; 第2(d)圖:顯示第2(c)圖所示之ECC解碼器組塊的原理圖; 第3 (a)圖:顯示本發明的可變寬度ECC計算機; 第3 ( b )圖··顯示允許處理連續傳入之不同資料寬度之資料 流的可變寬度ECC計算機; 第4圖:顯示先前技藝浮動閘極裝置的結構; 第5圖:顯示本發明方法之ECC自我修復程序的流程圖; 第6 a圖至第6 d圖:顯示使用一個類比信號來代表多重位元 數位資料的不同方法; 第6(e)圖:顯示依據第6(b)圖所示之表格來實施類比轉數 位資料轉譯之電路的方塊圖; 第7a圖至第7c圖:顯示先前技藝内容可定址記憶體及其關 聯記憶單元的結構;以及 第8a圖至第8d圖:顯示有關CAM裝置之ECC保護的實例。Page 559696 Brief description of the diagrams Figure 1: Block diagram showing ECC circuit of the prior art; Figure 2 (a): Principle diagram showing rotation correlation between ECC blocks implementing the present invention; Figure 2 (b) Figure: shows the principle diagram of the ECC block shown in Figure 2 (a); Figure 2 (c): shows the structure of the ECC decoder of the present invention; Figure 2 (d): shows the location shown in Figure 2 (c) Schematic diagram of the ECC decoder block shown; Figure 3 (a): shows the variable-width ECC computer of the present invention; Figure 3 (b): · Shows the processing of data streams of different incoming data widths that allow continuous processing Variable-width ECC computer; Figure 4: shows the structure of the floating gate device of the prior art; Figure 5: a flowchart showing the ECC self-healing procedure of the method of the present invention; Figures 6a to 6d: shows the use of a Different methods of analog signals to represent multi-bit digital data; Figure 6 (e): a block diagram showing a circuit for implementing analog-to-digital data translation according to the table shown in Figure 6 (b); Figures 7a to 7 Figure 7c: shows the structure of the addressable memory and its associated memory unit of the prior art content; and Figure 8a Through FIG. 8d: ECC shows an example of the protection means about CAM.

第24頁Page 24

Claims (1)

559696 六、申請專利範圍 1 · 一種用以變更一錯誤修正碼(ECC)邏輯電路組態的方 法,以執行一已變更資料寬度的錯誤檢查,該方法包 括下列步驟: 連續互相連接一組N1個完全一樣的錯誤檢查組塊,其 中N1是第一正整數;以及 藉由將該ECC邏輯電路變更成一組N2連續互相連接的 · 電路來重新組態ECC邏輯電路,該電路包括N 2個完 全一樣的錯誤檢查組塊,其中N2是第二正整數。 2 ·如申請專利範圍第1項之方法,其中·· 連續互相連接一組N 1個完全一樣的錯誤檢查組塊的步 驟是,只在連續相鄰的錯誤檢查組塊之間互相連接 4 該等N 1個錯誤檢查組塊的步驟,用以只在相鄰的錯 誤檢查組塊之間傳輸信號;以及 藉由將該ECC邏輯電路變更成一組N2個連續互相連接 的電路來重新組態ECC邏輯電路的步驟是,只在連 續相鄰的錯誤檢查組塊之間互相連接該等N 2個錯誤 檢查組塊的步驟,用以只在相鄰的錯誤檢查組塊之 間傳輸信號。 3 · —種用來操作一包含複數個記憶單元之記憶裝置的方 法,該方法包括下列步驟: 對該等記憶單元執行一錯誤檢查;以及 修復一儲存一錯誤資料位元的錯誤記憶單元。 4 ·如申請專利範圍第3項之方法,其中·· 修復一錯誤記憶單元的步驟進一步包括,藉由將一正559696 VI. Scope of Patent Application 1 · A method for changing the configuration of an error correction code (ECC) logic circuit to perform an error check of a changed data width, the method includes the following steps: A group of N1 pieces are continuously connected to each other Exactly the same error-checking block, where N1 is the first positive integer; and the ECC logic circuit is reconfigured by changing the ECC logic circuit to a set of N2 continuous interconnected circuits that includes N 2 identical The error checking chunk, where N2 is the second positive integer. 2 · The method as described in the first item of the patent application scope, where: · The steps of consecutively connecting a group of N 1 identical error-checking blocks are to connect each other only between consecutively adjacent error-checking blocks 4 This Steps of waiting N 1 error checking blocks for transmitting signals only between adjacent error checking blocks; and reconfiguring ECC by changing the ECC logic circuit into a set of N 2 consecutive interconnected circuits The step of the logic circuit is a step of connecting the N 2 error-checking blocks to each other only between consecutive adjacent error-checking blocks to transmit signals only between the adjacent error-checking blocks. 3. A method for operating a memory device including a plurality of memory cells, the method including the following steps: performing an error check on the memory cells; and repairing an error memory cell storing an erroneous data bit. 4. The method according to item 3 of the scope of patent application, wherein the step of repairing an incorrect memory unit further includes, by 第25頁 559696 六、申請專利範圍 確位元寫入至該錯誤記憶單元以自動修復該錯誤記憶 單元的步驟。 5 · —種包括複數個記憶單元的記憶裝置,其中每個記憶 單元均具有一用來儲存複數個電荷的浮動閘極,該記 憶裝置進一步包括: 一錯誤檢查邏輯電路,該錯誤檢查邏輯電路包括連續 -互相連接的一組完全一樣之錯誤檢查組塊,用以檢查 該等記憶單元中的資料儲存錯誤。 6 ·如申請專利範圍第5項之記憶裝置,該記憶裝置進一 步包括: 一多重位準電壓裝置,用以在該等浮動閘極上供應至 f 少兩種電荷位準,以表示儲存於該等記憶單元中的至 少兩位二進位位元。 7 ·如申請專利範圍第6項之記憶裝置,該記憶裝置進一 步包括: 一多重位準電荷感測裝置,用以偵測儲存於該等浮動 閘極中的至少兩種電荷位準,以偵測儲存於該等記憶 單元中的至少兩位二進位位元。 8 ·如申請專利範圍第7項之記憶裝置,其中·· 該多重位準電荷感測裝置進一步包括一位元模式裝置 ,用以依據該多重位準電荷感測裝置所感測到的電荷 位準來產生一位元模式。 9 ·如申請專利範圍第7項之記憶裝置,其中: 該位元模式裝置進一步提供依據該電荷位準來產生一Page 25 559696 VI. Scope of patent application Steps for confirming that the bit is written to the wrong memory unit to automatically repair the wrong memory unit. 5. A memory device including a plurality of memory cells, wherein each memory cell has a floating gate for storing a plurality of charges, the memory device further includes: an error check logic circuit, the error check logic circuit includes Continuous-an interconnected set of identical error-checking blocks for checking data storage errors in these memory cells. 6 · If the memory device according to item 5 of the scope of patent application, the memory device further includes: a multi-level voltage device for supplying to the floating gates to at least two charge levels of f to indicate storage in the Wait for at least two binary bits in the memory unit. 7 · If the memory device according to item 6 of the patent application scope, the memory device further comprises: a multi-level charge sensing device for detecting at least two charge levels stored in the floating gates, so as to Detecting at least two binary bits stored in the memory cells. 8. The memory device according to item 7 of the scope of patent application, wherein the multi-level charge sensing device further includes a bit mode device for determining the charge level based on the multi-level charge sensing device. To generate a one-bit pattern. 9 · The memory device according to item 7 of the patent application scope, wherein: the bit mode device further provides for generating a voltage according to the charge level. 第26頁 559696 六、申請專利範圍 位元模式序列,其中依據一第一電荷位準的每個位元 模式只有一單一位元不同於代表一連續相鄰該第一電 荷位準之第二電荷位準的第二位元模式。 I 〇 · —種包括複數個記憶單元的記憶裝置,其中每個記憶 ^ 單元均具有至少兩種記憶單元特性狀態,每種狀態均 代表該記憶單元中儲存的一位元模式,該記憶裝置進 、 一步包括: 一錯誤檢查邏輯電路,該錯誤檢查邏輯電路包括連續 互相連接的一組完全一樣之錯誤檢查組塊,用以檢查 該等記憶單元中的資料儲存錯誤。 II · 一種包括用以儲存一陣列内容之複數個記憶單元陣列 ji 的内容可定址記憶體(CAM)裝置,用以依據一與該陣 列内容的匹配來提供對一陣列的資料存取,該CAM裝 置進一步包括: 一錯誤檢查邏輯電路,用以檢查每個記憶單元陣列的 資料存取錯誤。 1 2 ·如申請專利範圍第1 1項之内容可定址記憶體(CAM)裝 置,該CAM裝置進一步包括: 一錯誤碼儲存裝置,用以儲存該錯誤檢查邏輯電路使 用之每個記憶單元陣列的一錯誤碼檢查(ECC)位元, 用以檢查每個記憶單元陣列的資料存取錯誤。 1 3 ·如申請專利範圍第1 1項之内容可定址記憶體(CAM)裝 置,其中: 每個記憶單元陣列進一步儲存該錯誤檢查邏輯電路產Page 26 559696 VI. Patent application bit pattern sequence, in which each bit pattern according to a first charge level differs by only a single bit from a second charge representing a consecutive adjacent first charge level Level of the second bit pattern. I 〇 · — A memory device including a plurality of memory units, wherein each memory ^ unit has at least two characteristics of the memory unit, each state represents a one-bit mode stored in the memory unit, the memory device is One step includes: An error checking logic circuit, which includes a set of identical error checking blocks that are continuously connected to each other to check data storage errors in the memory units. II · A content addressable memory (CAM) device including a plurality of memory cell arrays ji for storing an array content, for providing data access to an array according to a match with the content of the array, the CAM The device further includes: an error checking logic circuit for checking data access errors of each memory cell array. 1 2 · If the content of claim 11 of the patent application addressable memory (CAM) device, the CAM device further includes: an error code storage device for storing each memory cell array used by the error checking logic circuit An error code check (ECC) bit is used to check data access errors of each memory cell array. 1 3 · Addressable memory (CAM) device as described in item 11 of the scope of patent application, where: each memory cell array further stores the error check logic circuit product 559696 六、申請專利範圍 元模式的一單一位元不同於代表一相鄰信號位準之另 一位元模式。 liB 第29頁559696 VI. Scope of patent application A single bit pattern of a meta pattern is different from another bit pattern representing an adjacent signal level. liB Page 29
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI729786B (en) * 2020-04-24 2021-06-01 華邦電子股份有限公司 Memory storage device and automatic error repair method thereof
CN113268373A (en) * 2020-02-14 2021-08-17 华邦电子股份有限公司 Memory storage device with automatic error recovery mechanism and method thereof
US11715510B2 (en) 2021-02-26 2023-08-01 Windbond Electronics Corp. Semiconductor memory device having control unit which sets the refresh interval of the memory cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113268373A (en) * 2020-02-14 2021-08-17 华邦电子股份有限公司 Memory storage device with automatic error recovery mechanism and method thereof
CN113268373B (en) * 2020-02-14 2023-09-26 华邦电子股份有限公司 Memory storage device with automatic error repair mechanism and method thereof
TWI729786B (en) * 2020-04-24 2021-06-01 華邦電子股份有限公司 Memory storage device and automatic error repair method thereof
US11715510B2 (en) 2021-02-26 2023-08-01 Windbond Electronics Corp. Semiconductor memory device having control unit which sets the refresh interval of the memory cell

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