TW558758B - De-capping process - Google Patents

De-capping process Download PDF

Info

Publication number
TW558758B
TW558758B TW91100531A TW91100531A TW558758B TW 558758 B TW558758 B TW 558758B TW 91100531 A TW91100531 A TW 91100531A TW 91100531 A TW91100531 A TW 91100531A TW 558758 B TW558758 B TW 558758B
Authority
TW
Taiwan
Prior art keywords
sulfuric acid
acid
wafer
item
patent application
Prior art date
Application number
TW91100531A
Other languages
Chinese (zh)
Inventor
Yung-Hsin Wang
Original Assignee
Via Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Via Tech Inc filed Critical Via Tech Inc
Priority to TW91100531A priority Critical patent/TW558758B/en
Application granted granted Critical
Publication of TW558758B publication Critical patent/TW558758B/en

Links

Abstract

A kind of de-capping process uses a solution composition in the de-capping process to remove epoxy resin, in which the solution composition at least contains H2SO4 and HNO3. The invention is achieved by using HNO3 for the function of softening epoxy resin and H2SO4 for the function of etching epoxy resin. Therefore, reaction time with epoxy resin and consumption of acid liquid can be reduced, thereby reducing the cost of the de-capping process.

Description

558758 五、發明說明(1) 【發明領域】 本發明係關於一種積體電路封裝體測試所需的去封 (kca^uUUon)製程,特別是—種利用發煙確酸與純碎I 馱的洛液組成,兩階段進行去封裝製程的方法。, 【發明背景】 隨著半導體技術之快速演進,電子產品在輕薄短小 ^的推動下,元件的工作速度越來越快,满耗功率越來 损顔二Ξ·此’降低電感阻抗、增進電性效益的需求,則曰 重要。同時,IC半導體的1/〇數目不但越來越多, 在越來越尚,使得封裝元件的引腳數亦隨之增加,因 而發展出多種封裝結構。 、方扁平封裝(QFP)而言,由於其接腳間距(PitCh i阁法:更細微化,因此大大地阻礙了其增加接腳數目的 二::由於受限於接腳間距無法再更細微化…增加接 :數目之後伴隨而來的往往是其體積的增加,如此,便違 小的趨勢。近年來,採用具有球腳格狀 者的、驾^,复1^1、Arrr’ BGA )之構裝結構已成為大多業 、^ ,、糸以塑膠基板及錫球取代傳統的金屬導線 上’:曰”的"Ο則藉由打線的方式連接到基板上的焊墊 (on mg Pad),再透過導通孔(Via)而連接至基板下方。 G成==裂·,常因為檢測、測試或是修復晶片的 :要’=必,對封裳產品進行去封裝(decapsuiati〇n)的 ,兹以球腳格狀陣列封裝為例,言兒明傳統之去封裝製 558758 五、發明說明(2) 程的方法。 請參考第1圖,其係為一球腳格狀陣列塑膠封裝 (Plastic BGA,PBGA)產品於去封裝前後的示意圖,圖 =虛^表習知技術達成去封裝的條件,而左方 -球腳格狀陣列塑夥封裝產品去封裝前的示意 ^中^IGG的下方’具有複數個錫球15(),基板_ 方:則有複數個焊墊120 ’晶片11〇上的1/〇則藉由金:二 連接’而晶片110、焊墊12〇與金線130 ,係利用 %^6ί^(ΕΡ〇Χ5〇140加以黏著固定,並保護之。晶片丨 上方之環氧樹脂14〇的厚度約為865 //m。 f產:進> ::::f:構’其係為球腳袼狀陣列塑膠封 仃去封裝後的示意冑,一般係利用濃度高的 夕♦綠仏- π t 』玉獨跟路為原則。如第1圖中 η戶::’習知技術所使用的強酸溶液係為溫度約為 為Ll 酸(㈣4),所需時間約W分4G秒,用量約 請參考第2圖,其係為一球腳格狀陣列加強封裝 (Enhanced BGA,EBGA)產品於去封穿前 ^ 中之虛線代表白知技術達成去封裝的條件,其 裝結構,為一球腳格狀陣列塑膠封裝產。=‘二立 焊塾220,晶片210上的1/〇則J :二:球250以及複數個 接,而晶片21〇、焊墊22。與金=線7與焊塾220連 綠uo,係利用環氧樹脂 558758 五、發明說明(3) (Epoxy)240加以黏著固定,並保護之。 裝產之/方的封裝結構,為球腳格狀陣列加強封 習知所使:的的示意S,如圖中之虛線路徑所示, 需時間約為3分30秒,用量約為^為的純硫酸’所 陣列塑膠封裝產/不2里/\42^。與第1圖之球腳格狀 上方,容易因古1〇 疋,由於錫球25〇位於基板2〇〇的 =今易因兩溫的硫酸而產生氧化,因此,於去封梦= %,必須將周圍之錫球25〇 、 、進 球250受損害。铁而,仏本用錫泊忒包起來,以避免錫 擾。 …、 步驟頗增加去封裝製程時的困 睛參考第3圖 ^ ^ m M t (PBGA) ^ ^ ^ 陣 線代表習知技術達成該產 :f的不思圖’圖中之虛 結構’為-球腳格狀陣列塑件,而左方的封裝 圖,其中晶片310上的I/O藉由金^ 去封裝前的示意 數個錫球350位於基板30〇的下方、、私、焊墊320連接,複 氧樹脂(Epoxy ) 340加以黏著固—,/、金線330,則利用環 (Epoxy)3 40的外部更有—散埶=並保濩之。於環氧樹脂 工作時所產生的熱能。 …、 ’用以幫助元件驅散 第3圖中之右方的封骏結構复 膠封裝(PBGA)產品進行去封裝的、1糸為球腳格狀陴列塑 移除後,再利用習知的強酸二 > =不意圖,將散熱片360 340,如圖中之虛線路徑所 |示樹脂(Epoxy) ’、,/、係為溫度約250。c的純 五 發明說明(4) 硫酸(h2so4),所需時間約 如上所述,習知技術用以達刀1〇广"用量約為3“L。 4圖所示,首先於4〇1步驟中::裝製程的流程圖,如第 封裝結構上,接著,進行:驟二適量的純硫酸溶液提供至 袭結構上的環氧樹脂反鹿了 =22、,純硫酸溶液開始與封 於純硫酸溶液去環氧樹脂的效果J钱::ϊ f。然*,由 性溶液,而增加廢酸的生成 而消耗大量之酸 環氧樹脂反應,而造成整個 班^而要較長的時間與 本發明即針對傳統去封製增加。, 的方法。 讀裝h的缺點,提供-種解決 【發明目 本發 縮短製程 本發 溶液組成 本發 硫酸以及 環氧樹脂 增進硫酸 液組成應 酸與該純 :位於同 ^ A · 1 的及概 明的主 時間並 明之另 ,以縮 明提供 發煙硝 ,其中 蝕刻環 用於錫 硫酸的 側的封 述】 要目的係 減少酸液 一目的, 短製程時 一種去封 酸的溶液 發煙硝酸 氧樹脂的 球與晶片 用量比例 裝體時 提供一種去封裝的製程方法 消耗 係提供 間並減 裝的製 ,兩階 係提供 效率。 位於不 約為1 : 發煙硝 以 一種去 少酸液 程方法 段反應 軟化環 當本發 同侧的 4 ;當 酸與純 封裝製程所使用的 消耗。 ’利用至少包含純 去除封裝體表面的 氧樹脂的功苑,以 明製程所使用之溶 封裝體時,發煙硝 應用於錫球與晶片 硫酸的用量比例約 558758 五、發明說明(5) ^ 為讓本發明之上述目的、特徵以及{ 摩’下文特舉多個較佳實施例,做詳細白 【詳細說明】 本發明係提供一種去封裝的製程方沒 =,氧樹脂的溶液組成,此種溶液組成3 裱氧樹脂的封裝結構中。本發明所提供贫 =以不傷害晶片上的金屬線路為原則,快 脂,以減少製程時間成本以及原料成本, 成,減輕廢水處理的負擔。 本發明所提供用於去封裝製程令之去 ,、且成,至少包含純硫酸(& )與發煙靖 轭例中所抓用的發煙硝酸的濃度係為9 8 % ,酸,而硫酸的濃度約為95%,首先利用 蒸氣巧供去封裝製程中軟化環氧樹脂的功 蝕刻環氧樹脂的功能,將可大大地提高去 率。下列將分別敘述本發明對傳統之三個 之改善的方法,以及改善的程度,並將其 最後的表中。 請參考第1圖’其係為-球腳格狀陣 (PlaStlC BGA,PBGA)產品於去封裝前後# 之實線代表本發明達成去封裝的條件,而 構,為一球腳格狀陣列塑膠封 其中複數個錫球150位於基板_的;方, 點能更明顯易 說明如下。 包括提供一去 應用於任柯具有 去封裝製程,能 速地去除環氧樹 並減少廢酸的生 除環氧樹脂的溶 酸(ΗΝ03),本實 以上的白色發煙 發煙硝酸的高溫 能’再配合硫酸 封裝製程的效 實施例’所提出 結果整理比較於 列塑膠封裝 J示意圖,圖中 左方的封裝結 裝前的不意圖’ 複數個焊墊120 558758 五、發明說明(6) 位於基板100的上方,晶片11〇上的1/0則藉由金線13〇與 墊1 2 0連接,而晶片11 〇、焊墊丨2 〇與金線丨3 〇,係利用環 樹脂(Epoxy) 140加以黏著固定,並保護之,避免濕氣= 入,而減少元件的使用壽命。再者,晶片丨丨〇上方’之'产 樹脂140的厚度約為865/zm。 衣取1 如圖中之實線路徑所示,本發明達成去封裝所提供之 溶液組成係包含發煙硝酸與純硫酸,其中發煙硝酸的用'旦 小於純硫酸的用量,於此實施例中所使用溫度約為25〇里 °C,發煙硝酸與純硫酸的用量比例約為丨·· 4,所恭 時間約為50sec至lmin之間,溶液用量約為^至丨^/。、 第4圖之右方封裝結構,其係為球腳格狀陣列塑膠558758 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a kca ^ uUon process required for testing integrated circuit packages, in particular, a method using fuming acid and pure crushed I 驮Luo liquid composition, two-stage method of decapsulation process. [Background of the Invention] With the rapid evolution of semiconductor technology, electronic products are becoming faster and faster, driven by lightness, thinness, and shortness, and full power consumption is increasingly detrimental to Yan Erqi. The need for sexual benefits is important. At the same time, the number of 1/0 of IC semiconductors is not only increasing, it is becoming more and more fashionable, and the number of pins of package components is also increasing accordingly, thus developing a variety of package structures. In terms of square flat package (QFP), because of its pin pitch (PitCh i Pavilion method: more fine-grained, it greatly hinders its increase in the number of pins. 2: Because it can not be more fine due to the pin pitch Increase ... Increase in number: After the number is often accompanied by an increase in its volume, this is contrary to the trend of small. In recent years, the use of ball-foot grid, driving ^, complex 1 ^ 1, Arrr 'BGA) The mounting structure has become the industry's most widely used plastic substrate and solder ball instead of traditional metal wires. ":" "" Is connected to the solder pads on the substrate (on mg Pad) ), And then connected to the bottom of the substrate through a via (Via). G Cheng = = crack, often because of testing, testing or repairing the wafer: '= must, decapsulating the packaged product (decapsuiati〇n) Here, we will take the ball-pin grid array package as an example. The traditional method of packaging 558758 is described below. 5. The method of description (2) of the invention. Please refer to Figure 1, which is a ball-pin grid array plastic package. (Plastic BGA, PBGA) schematic diagram of the product before and after decapsulation, picture = virtual ^ table exercise Known technology achieves the conditions for decapsulation, and the left-ball-foot grid array plastic package packaging product is shown before decapsulation. ^ Below IGG 'has a plurality of solder balls 15 (), the substrate _ side: there are multiple The pad 120 '1/0 on the wafer 11 is connected by gold: two', and the wafer 110, the pad 120 and the gold wire 130 are adhered and fixed by using% ^ 6ί ^ (ΕΡ〇χ5〇140), and Protect it. The thickness of the epoxy resin 14 on the top of the wafer is about 865 // m. F Production: advance> :::: f: structure 'It is a ball-foot 袼 array plastic seal after decapsulation. It is indicated that the general use of high-concentration xi 仏 green 仏-π t 』Yudu follow the principle as a principle. As shown in Figure 1 η :: 'The strong acid solution used in the conventional technology is about Ll acid (㈣4), the required time is about W minutes and 4G seconds. Please refer to Figure 2 for the dosage. It is a ball-pin grid array enhanced package (Enhanced BGA, EBGA) product. Known technology achieves the conditions for decapsulation, and its packaging structure is a one-ball grid array plastic package. = 'Two vertical solder pads 220, 1/0 of the chip 210 J: two: ball 250 and a plurality of connections, and the wafer 21, pads 22. With gold = wire 7 and solder pads 220 green green uo, using epoxy resin 558758 V. Description of the invention (3) (Epoxy) 240 and fixed, and Protection. The package structure of the production / square is used to strengthen the sealing of the ball-shaped grid array. The schematic S is shown in the dotted path in the figure. It takes about 3 minutes and 30 seconds. ^ For pure sulfuric acid 'array plastic package production / not 2 miles / \ 42 ^. As shown in the figure above, the ball foot above the grid is easy to be caused by the ancient 10 古. Since the solder ball 25〇 is located on the substrate 200〇, it is easy to be oxidized by the two-temperature sulfuric acid. The surrounding solder balls must be damaged by 250 and 250 goals. Iron and steel, wrapped in tin poach, to avoid tin interference. …, The steps are quite addictive when decapsulating the process. Refer to Figure 3 ^ ^ m M t (PBGA) ^ ^ ^ The array represents the conventional technology to achieve this: the fictional map of f's virtual structure in the figure is- Ball-foot grid array plastic parts, and the left side of the package diagram, in which the I / O on the wafer 310 is de-packaged with a number of solder balls 350, which are located below the substrate 30, private, and pad 320. For connection, Epoxy resin 340 is adhered and fixed, and / or gold wire 330, and the outer part of the ring (Epoxy) 3 40 is even more-loose = and keep it. Thermal energy generated during epoxy resin operation. …, 'Used to help the components disperse the right side of the packaged structure (PBGA) products shown in Figure 3 for de-encapsulation, 1 糸 is a ball-shaped grid, removed, and then used the conventional Strong acid di > = It is not intended that the heat sink 360 340, as shown by the dashed path in the figure | shows the resin (Epoxy), and the temperature is about 250. Description of pure five inventions of c (4) Sulfuric acid (h2so4), the time required is about as described above, and the conventional technology is used to reach the knife 10 vol. "The amount is about 3" L. As shown in Figure 4, the first In step 1 :: the flow chart of the manufacturing process, as in the first package structure, then, proceed to: step two: the appropriate amount of pure sulfuric acid solution is supplied to the epoxy resin on the structure = 22, and the pure sulfuric acid solution starts to seal. The effect of removing epoxy resin in pure sulfuric acid solution J Qian :: ϊ f. Then *, the consumption of a large amount of acidic epoxy resin is increased by the use of sexual solution, which increases the generation of waste acid, which results in a longer class. The time and the present invention are directed to the traditional method of increasing the deblocking. The shortcomings of the package h provide a solution [invention of the present invention shortens the process of the hair solution, the composition of the hair sulfuric acid, and the epoxy resin to improve the sulfuric acid composition With this pure: located at the same as the ^ A · 1 and the outline of the main time and stated otherwise, to provide fuming nitrate, in which the etching ring is used to seal the side of stannic acid] The purpose is to reduce the acid solution, A deblocked acid solution in a short process Smoke ball nitrate resin balls and wafers are provided in a ratio of the amount of the package to the packaging method. The depletion system is provided and the system is reduced. The two-stage system provides efficiency. Located at no more than 1: Fuming nitrate with a less acid solution The process method of the reaction process softens the ring on the same side of the hair; the consumption of the acid and the pure packaging process is used. 'Using at least the oxygen-containing resin that purely removes the surface of the package body, the soluble package used in the Ming process At the time, the amount of fuming nitric acid used in the tin ball and the wafer sulfuric acid is about 558758. V. Description of the invention (5) ^ In order to make the above-mentioned objects and features of the invention and { [Detailed description] The present invention provides a de-encapsulation process method, the solution composition of oxygen resin, such solution composition 3 in the packaging structure of the oxygen resin. The invention provides poor = so as not to damage the metal circuit on the wafer As a principle, fast fat can reduce the cost of process time and the cost of raw materials, and reduce the burden of wastewater treatment. The invention provides a process for decapsulating processes. And, at least, the concentration of pure sulfuric acid (&) and the fuming nitric acid used in the fuming example is 98%, acid, and the concentration of sulfuric acid is about 95%. In the decapsulation process, the function of softening the epoxy resin and the function of etching the epoxy resin can greatly improve the removal rate. The following describes the methods for improving the three traditional methods of the present invention, and the degree of improvement, and finally Please refer to Fig. 1 'It is a PlaStlC BGA (PBGA) product before and after decapsulation. The solid line represents the conditions for decapsulation achieved by the present invention, and the structure is a ball foot. The lattice-shaped plastic package has a plurality of solder balls 150 located on the substrate; the squares can be more clearly and easily explained as follows. Including the application of Ren Ke's de-encapsulation process, which can quickly remove the epoxy tree and reduce the waste acid generation, epoxy acid-soluble acid removal (ΗΝ03), high-temperature energy of white fume, fuming nitric acid, and more 'Effective example of recombination with sulfuric acid packaging process' The results presented are compared and compared with the schematic diagram of column plastic package J. The left side of the package is not intended before packaging.' A plurality of solder pads 120 558758 V. Description of the invention (6) Above the substrate 100, 1/0 on the wafer 11 is connected to the pad 120 by the gold wire 13o, and the wafer 11 〇, the pad 丨 2 〇 and the gold wire 丨 3 〇 are made of ring resin (Epoxy 140) Adhesive and fixed, and protect it from moisture, and reduce component life. In addition, the thickness of the 'resin 140' produced above the wafer is about 865 / zm.衣 取 1 As shown by the solid line path in the figure, the composition of the solution provided by the present invention to achieve decapsulation includes fuming nitric acid and pure sulfuric acid, wherein the amount of fuming nitric acid is less than the amount of pure sulfuric acid. In this embodiment, The used temperature is about 25 ° C. The proportion of fuming nitric acid and pure sulfuric acid is about 丨 · 4, the time is about 50sec to 1min, and the amount of solution is about ^ to 丨 /. The package structure on the right in Figure 4, which is a plastic ball grid array plastic

品進行去封裝後的示意圖,本發明所提供之去除環I 的溶液組成,係以去除晶片丨丨〇上方之環氧樹脂1 為主。曰 於此實施例中,發煙靖酸提供的軟化效果純 蝕刻環氧樹脂的效率。 《退純硫酸 請參考第2圖,其係為一球腳袼狀陣列加強封 (Enhanced BGA,EBGA)產品於去封裝前後的示音圖, 中之實線代表本發明達成去封裳的溶液條件,:圖圖 ^結構’為-球腳格狀陣列塑膠封裝產品去封裝前的= 思圖’晶片210上的I/O藉由金線23〇與谭塾22〇連接, 200的上方’具有複數個錫球25()以及 土 晶片⑴、焊墊22。與金線230,係利用環氧樹焊墊㈣而 (Epoxy )240加以黏著固定,並保 毒命。並中士 以增加几件的使用 ^ 上方之環氧樹脂24()的厚度約為〇.3mm 558758 五、發明說明(7) 至〇· 7mm之間。 第2圖中之右方4 1 產品進行去封梦%、_裝結構,為球腳格狀陣列加強封裝 膠封裝產品不^的:意圖’與第1圖之球腳格狀陣列塑 2〇〇的同一侧,六/:n,由於錫球25 0及晶片210位於基板 而,本發明所提'供之/二濃酸溶液而產生氧化,然 型封裝結構俜採用* %乳樹脂的溶液組成,針對此類 *會產生酸的用量大於純硫酸的用量,並 箱紙包起來的步驟。如可圖需要將錫球250用錫 實施例中所使用溫度約為120:m徑所示,其於此 的用量比例約為4:丨,所,、中發煙確酸與純硫酸 至2min 50sec之門,β ^而4耗的時間約為2min 3〇sec Msec之間,洛液用量約為⑽至以以。 值仔注意的是,於+普A ' 比例,相對地小於第丨圖ΛΓ;^ ’所^用的純硫酸用量 有位於基板20 0之上的錫例’因為此實施例中具 炉酸而葡:Λ 而錫球250容易因過多的 ,因此,增加發煙確酸的濃 的 製私中軟化環氧樹脂240的效果,A刹田丨Θ ^ 刻環氡樹脂,卩得到較佳的去果封/:要用少置的純硫酸钱 路徑比較,本發明所加二果-若與第2圖虛線 =Λ Λ /封農製程中省去了包錫球25。的ί 驟 而大大地Μ化了製程步驟。 ν 請參考第3圖’其係為一具有捋勒 列塑膠封裝(PBGA)產品於去封裝前後…立之球腳格狀陣 線代表本發明達成該產品去封圖,圖中之實 J衣妁,合液條件,而左方的封After the product is de-packaged, the solution composition for removing ring I provided by the present invention is mainly for removing epoxy resin 1 above the wafer. In this embodiment, the softening effect provided by fuming acid is purely the efficiency of etching epoxy resin. "Refuse pure sulfuric acid, please refer to Figure 2. It is a sound diagram of a ball-foot 袼 array enhanced sealing (Enhanced BGA, EBGA) product before and after decapsulation. The solid line in the figure represents the solution of the present invention to achieve decapsulation. Conditions: Figure ^ Structure 'is-Ball-foot grid array plastic packaging product before decapsulation = Situ' I / O on chip 210 is connected to Tan 20 by gold wire 23, above 200 ' It has a plurality of solder balls 25 (), a sintered wafer, and a bonding pad 22. With gold wire 230, epoxy tree pads (Epoxy) 240 are used to fix and adhere to it, and protect it from poison. And sergeant to increase the use of several pieces ^ The thickness of the epoxy resin 24 () above is about 0.3mm 558758 V. Description of the invention (7) to 0.7mm. The right side of the 1st product in Figure 2 is de-sealed. The structure of the package is designed to enhance the packaging of the ball-foot grid array. The package is not ^: Intent 'and the ball-foot grid array of Figure 1 is molded. 2 On the same side of 〇, 6 /: n, because the solder ball 250 and the wafer 210 are located on the substrate, the 'provided / dilute acid solution provided by the present invention is oxidized, and the type packaging structure uses a solution of *% emulsion resin. For this step, the amount of acid produced will be greater than the amount of pure sulfuric acid, and the paper will be wrapped. As can be seen from the figure, the temperature used in the example of the tin ball 250 is about 120: m diameter, and the dosage ratio here is about 4: 丨 So, fuming acid and pure sulfuric acid to 2min For the gate of 50sec, β ^ 4 takes about 2min to 30sec Msec, and the amount of Luoye is about ⑽ to less than. It is worth noting that the ratio of + A is relatively smaller than the figure ΛΓ; ^ 'The amount of pure sulfuric acid used is tin which is above the substrate 20 0' Because of the furnace acid in this embodiment, Portuguese: Λ, and the tin ball 250 is easy to be excessive, so it increases the effect of softening the epoxy resin 240 in the production of strong fuming acid. Akatian 丨 Θ ^ engraved ring 氡 resin, 卩 get better Fruit seal /: To compare with the path of less pure sulfuric acid, the two fruits added in the present invention-if and the dashed line in Fig. 2 = Λ Λ / tin-free ball 25 is omitted in the process of sealing agriculture. This greatly reduces the process steps. ν Please refer to Figure 3 'It is a product with a Pale Plastic Packaging (PBGA) product before and after decapsulation ... The vertical ball grid array represents the invention to achieve the product decapsulation. , Confluent conditions, and the left seal

558758 五、發明說明(8) ^ ? ί 一具ί散熱片360之球腳格狀陣列塑谬封 ‘於Α板300°:封裝前的示意圖,其中複數個錫球350係 上:ΐ =下方,而複數個焊墊320則位於基_〇的 日Li。二丄的1/〇則藉*金線330與焊塾320連接,而 元# 0的α暂。疋^ ^並保護之,以防止水氣的滲入,影響 ' 。於%氧樹脂(EP〇xy)340的外部更有一散埶片 360,*用以幫助元件驅散工作時所產生的熱=彳政…片 #封i右。方#的封裝結構’其係為球腳格狀陣列塑 膠封衣(PBGAM〇。進行去封裝後的示 移除後’再利用本發明之去咚声#也 肝敢熱.片 液組成,如圖中之實線所干月曰(Ep〇Xy) 340的溶 液組成…發煙硝酸的用量;酸與純硫酸的溶 比例約為m所需消^^煙Λ與純硫酸的用量 15謂⑽之間。 的用置約為3至侃’時間約為 固:ί ί : f圖所本發7溶液組成達成去封裝製程的流程 煙罐酸形成-溶独成;酸與發 酸與發煙硝酸的溶液組成提# i^ 2,將含有純硫 503,發煙确,開始軟化:二至二裝,構上;並進行步驟 進行步驟,,被軟化過的=環氧樹脂·’最後’ 到餘刻的效果。比對第4^=純硫酸反應,以達 功能,對於本發明之去封發煙硝酸的軟化 展I私的效果,有非常大的助 558758558758 V. Description of the invention (8) ^? Ί A ‚360-ball grid-shaped grid plastic array of heat sinks is erroneously sealed on plate A 300 °: a schematic diagram before packaging, in which a plurality of solder balls 350 are attached: ΐ = below , And the plurality of pads 320 are located at the base Li. 1/0 of the second frame is connected to the welding frame 320 by the * gold wire 330, and α of the element # 0 is temporarily.疋 ^ ^ and protect it to prevent the penetration of water vapor, affecting '. On the outside of the% oxygen resin (EPOxy) 340, there is a scattered sheet 360, which is used to help the component to dissipate the heat generated during the work = 彳 政 ... 片 # 封 i 右. The packaging structure of the square # is a ball-foot lattice array plastic coating (PBGAM. After removing the package, the display is removed and reused. The solution composition of the solid month (EpOxy) 340 in the figure is the amount of fuming nitric acid; the dissolution ratio of acid and pure sulfuric acid is about m. The amount of smoke ^ and pure sulfuric acid is 15%. The use time is about 3 to about 30 minutes. The time is about solid: ί: f Figure of the solution of the present invention 7 solution composition to achieve the process of decapsulation process of cigarette canister acid formation-dissolution alone; acid and fuming acid and fuming nitric acid The solution composition is # i ^ 2, it will contain pure sulfur 503, it will be smoked, and it will start to soften: two to two packs, constructed; and the steps are carried out, and the softened = epoxy resin * 'final' to The remaining effects. Comparing the 4 ^ = pure sulfuric acid reaction to achieve the function, it has a great help to the effect of the present invention to soften the fuming nitric acid. 558758

本發明因發煙硝酸所得到的大幅度改善,更可由下表 之對,明顯看出,茲就本發明所提供之溶液組成與習知技 術的况作一比較: 產 習知 本發明 品種類 PBGA EBGA PBGA +散熱片 澪液組威 純硫酸 純硫酸 純碗酸 溫度(°c) 250 150 260 時間 3分40秒 3分30秒 3分10矽 用量(jnL) 44 42 38 溶液組威 純硫酸+發煙 硝酸 j 純硫酸+發煙 硝酸 純硫酸+發煙硝酸 組成酸液的用 量比 (4:1) (1:4) (4:1) 溫度rc) 250°C 120t 250。。 時間 50sec 至 1 jd i η之間 2min 30sec 至 2jnin 50sec 之間 15sec 至 20sec 之間 tZg—量(社) 10至12之間 30至34之間 3—至 很顯然的’於習知的硫酸中加入發煙硝酸後,即可得 丨到t,明之去環氧樹脂的溶液組成,得力於發煙確酸之‘ =裱氧樹脂的功能,再配合上純硫酸之原有的蝕刻環氧^ 脂效果,因而本發明所提供之溶液組成,於去封裝製程中 i 1耗之酸性溶液量大大地減少,且降低廢酸的生成,同 I時’與環氧樹脂的反應時間亦變短,而減低整個去封 丨程的成本。 、表 558758 五、發明説明(10) 值得注意 成,可與任何 以得到更加的 成的使用量、 更可以將未完 本發明已以較 明,任何熟習 内,當可做各 視後附之申請 的是,本發 一種去封裝 使用效果, 適時地移除 全反應的溶 佳實施例揭 此技藝者, 種之更動與 專利範圍所 明所提供之去環氧樹脂的溶液組 裝置(Decapsulator)結合應用, 如此’可以更恰當地控制溶液組 酸與環氧樹脂反應後的反應物, 液組成收集後,再回收使用。 露如上,然其並非用以哏定本發 在不脫離本發明的精神和範圍 潤飾,因此本發明之保護範圍當 界定者為準。The significant improvement obtained by the present invention due to fuming nitric acid can be further seen from the following table. It is obvious that the solution composition provided by the present invention is compared with the state of the known technology: PBGA EBGA PBGA + heat sink 澪 solution group pure pure sulfuric acid pure sulfuric acid pure bowl acid temperature (° c) 250 150 260 time 3 minutes 40 seconds 3 minutes 30 seconds 3 minutes 10 silicon dosage (jnL) 44 42 38 solution group pure sulfuric acid + Fuming nitric acid j pure sulfuric acid + fuming nitric acid pure sulfuric acid + fuming nitric acid composition ratio of acid solution (4: 1) (1: 4) (4: 1) temperature rc) 250 ° C 120t 250. . Time 50sec to 1 jd i η 2min 30sec to 2jnin 50sec 15sec to 20sec tZg—amount (company) 10 to 12 30 to 34 3—obviously 'in the conventional sulfuric acid After adding fuming nitric acid, you can get to t, the solution composition of the epoxy resin is eliminated, which is effective for the function of fuming acid '= mounting oxygen resin, and combined with the original etching epoxy of pure sulfuric acid ^ Lipid effect, so the solution composition provided by the present invention greatly reduces the amount of acidic solution consumed by i 1 in the decapsulation process, and reduces the generation of waste acids. At the same time, the reaction time with epoxy resin also becomes shorter. And reduce the cost of the entire deblocking process. Table 558758 V. Description of the invention (10) It is worth noting that it can be used with any amount to get more success. It is also possible to make clear the unfinished invention. Any familiarity can be regarded as an attached application. What is more, the present invention discloses a decapsulating application effect, and timely removes the full-reaction solution. This embodiment is disclosed by the artist, and the modification is combined with the decapsulator solution provided by the patent scope. In this way, the reactants after the reaction of the solution acid and the epoxy resin can be more appropriately controlled, and the liquid composition is collected and then recycled. As shown above, but it is not used to determine the present invention without deviating from the spirit and scope of the present invention, so the scope of protection of the present invention shall prevail.

Claims (1)

558758 六、申請專利範圍 1 · 一種去封裝的製程方法,誃 製備一混合溶液,該混合溶^^〆匕3 · 提供該混合溶液至一且古f匕3硫酸與發煙硝酸; 軟化該環氧樹脂,1脂的封裝結構土; 蝕刻該環氣榭_ ; 7错由該發煙硝酸完成;以及 結構中的晶片與錫球係分別位於j:::的m該封裝 煙硝酸的用量係小於該硫酸。f裝基板的兩側時,該發 3·如申請專利範圍第1項所述之方氺甘士火 結構中的晶片與錫球係分別位/八中§該封裝 煙確酸與該硫酸的用量比例約為」土板的兩側時’該發 ,如申請專利範圍第丨項:1 述二,其中當”” 硝酸的用量係大於該硫酸。 發煙 5. 如申請專利範圍第丨項所述之方法,其中當哼 結構中的晶片與錫球係位於封裝基板的同一側時,^ ^ 硝酸與該硫酸的用量比例約為4 : i。 -货煙 6. —種用於封裝結構之去封裝製程中去除環 (Epoxy)的溶液組成,該封裝結構具有一基板、至少—: 片及複數個錫球,該環氧樹脂係覆蓋於該晶片上,曰曰 組成至少包含: 一液 硫酸;以及 發煙硝酸。 7 ·如申請專利範圍第6項所述之溶液組成,其中當气 558758558758 VI. Application Patent Scope 1. A decapsulation process method to prepare a mixed solution, the mixed solution ^^ 〆33 Provide the mixed solution to a solid sulfuric acid and fuming nitric acid; soften the ring Oxygen resin, 1 grease encapsulation structure soil; Etching the gas ring; 7 errors are completed by the fuming nitric acid; and the wafer and tin balls in the structure are located at j ::: Less than this sulfuric acid. f When mounting the two sides of the substrate, this issue 3. The wafer and solder balls in the square-shaped Ganshi fire structure as described in item 1 of the scope of the patent application, respectively / eight middle § The proportion of the packaged nicotinic acid and the sulfuric acid The hair should be about "on both sides of the soil plate", as described in the scope of the patent application: Item 1: 1 and the second, where when "" the amount of nitric acid is greater than the sulfuric acid. Smoke 5. The method according to item 丨 of the scope of patent application, wherein when the wafer and the solder ball in the hum structure are on the same side of the package substrate, the ratio of the amount of nitric acid to the sulfuric acid is about 4: i. -Cargo smoke 6.-A solution composition used to remove the ring (Epoxy) in the decapsulation process of the packaging structure, the packaging structure has a substrate, at least-: sheet and a plurality of solder balls, the epoxy resin covers the On the wafer, the composition contains at least: a liquid sulfuric acid; and fuming nitric acid. 7 · The composition of the solution as described in item 6 of the patent application scope, in which the gas 558758 晶片與該些錫球係分別位於該 a發煙硝酸的體積係小於該硫酸。 封二:*申請專利範圍第6項所述之溶液組成,其中當該 中的晶片與錫球係分別位於封裝基板的兩側時, I煙硝酸與該硫酸的體積比例約為1 ·· 4。 如申請專利範圍第6項所述之溶液組成,其中當該 欢裝…構中的晶片與錫球係位於封装基板的同一側時,該 I煙頌酸的體積係大於該硫酸。 ^ 1 〇 ·如申清專利範圍第6項所述之溶液組成,其中當The volume of the wafer and the solder balls are respectively smaller than that of the sulfuric acid. Cover 2: * The solution composition described in item 6 of the scope of patent application, wherein when the wafer and the solder ball are located on both sides of the package substrate, the volume ratio of I-nitric acid to the sulfuric acid is about 1 ·· 4 . The solution composition according to item 6 of the scope of the patent application, wherein when the wafer and the solder ball system in the package are located on the same side of the package substrate, the volume of the niacin acid is larger than the sulfuric acid. ^ 1 〇 · The solution composition as described in item 6 of the patent application 忒封裝結構中的晶片與锡球係位於封裝基板的同一侧時 為务煙確酸與該硫酸的體積比例約為4 : 1。时 When the chip and the solder ball in the package structure are located on the same side of the package substrate, the volume ratio of the fucidic acid to the sulfuric acid is about 4: 1. 第16頁Page 16
TW91100531A 2002-01-15 2002-01-15 De-capping process TW558758B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW91100531A TW558758B (en) 2002-01-15 2002-01-15 De-capping process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW91100531A TW558758B (en) 2002-01-15 2002-01-15 De-capping process

Publications (1)

Publication Number Publication Date
TW558758B true TW558758B (en) 2003-10-21

Family

ID=32311154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91100531A TW558758B (en) 2002-01-15 2002-01-15 De-capping process

Country Status (1)

Country Link
TW (1) TW558758B (en)

Similar Documents

Publication Publication Date Title
TWI220781B (en) Multi-chip package substrate for flip-chip and wire bonding
US7923350B2 (en) Method of manufacturing a semiconductor device including etching to etch stop regions
US10515904B2 (en) Method for forming chip package structure
TW445616B (en) An integrated circuit device
JP2007500445A5 (en)
TW200305980A (en) Multi-row leadframe
US20070037320A1 (en) Multichip packages with exposed dice
US20070222040A1 (en) Leadless semiconductor package with electroplated layer embedded in encapsulant and the method for manufacturing the same
GB2411767B (en) Structure and method for bonding to copper interconnect structures
TWI237888B (en) Multi-chip package and method for manufacturing the same
JP2010238702A5 (en)
HK1057648A1 (en) Chip scale surface mounted device and process of manufacture
JP2001196407A (en) Semiconductor device and method of forming the same
GB2438788B (en) Structure and method for fabricating flip chip devices
TW200929408A (en) Wafer level chip scale packaging
KR880008437A (en) Semiconductor device, manufacturing method thereof and wire bonding apparatus used therein
TW201128721A (en) Manufacturing method of semiconductor device
EP2620979A2 (en) Encapsulant with corosion inhibitor
TW519727B (en) Semiconductor wafer, semiconductor device and manufacturing method therefor
TWI231017B (en) Heat dissipation apparatus for package device
TW558758B (en) De-capping process
TW200816440A (en) Leaded stacked packages having integrated upper lead
JPS63293952A (en) Forming method for semiconductor element connection terminal
TW200416977A (en) Ball grid array semiconductor package and method for fabricating the same
TWI284422B (en) Package-on-package structure

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent