TW557509B - High density plasma processing apparatus - Google Patents

Abstract

Disclosed is a high density plasma processing apparatus having a resonance antenna coil so as to generate a uniform plasma over a substrate positioned inside a processing chamber. The high density plasma processing apparatus includes a processing chamber providing a hermetically sealed plasma generating space and having a planar surface on a top wall; a plurality of gas pipes that inject process gases into the processing chamber; a plurality of loop-shaped antennas installed on the planar surface of the top wall of the processing chamber and connected in parallel with each other; a resonance antenna coil receiving a high frequency power and including the plurality of loop-shaped antennas and a plurality of variable capacitor that are connected in parallel with the plurality of loop-shaped antennas in order to maintain a resonance state therebetween; a means for heating the resonance antenna coil by way of using a heat exchange medium; and a means for fixing a substrate inside the processing chamber parallel with the planar surface of the top wall of the processing chamber. According to the present invention, a high processing uniformity on and over a surface of the large-sized substrate processed in the processing chamber is obtained during the semiconductor device manufacturing process using the high density plasma. Therefore, the high density plasma processing apparatus can be used in gap filling, chemical vapor deposition, sputtering, etc.

Description

^ 57509 5. Description of the invention (1) [Background of the invention] [Scope of the invention] The present invention relates to a semiconductor device manufacturing equipment. More specifically, Tian Yiming is related to a high-concentration plasma (HDP) processing device, which has resonance_green ~ 圏 1: ~ uniform plasma concentration on the wafer (or substrate). 1Related Technology Discussion] So far, because semiconductor devices are becoming more integrated, it is much easier to fill metal line gaps with high aspect ratios without any gaps by using an insulating layer using chemical vapor deposition (CVD). The main cause of this gap

^ Insulators deposited at metal edges are faster than insulators deposited at metal sidewalls. In other words, the deposited insulator closes the entrance of the gap before filling the gap. In order to solve the above problem, although the insulator is formed by deposition, radio frequency (RF) sputtering etching is used to strike the plasma ions near the edge of the metal wire, so that the insulator at the edge of the metal wire is ordered Deposition of the insulator is performed. At this time, in addition to the chemical vapor deposition (CVD), the semiconductor device has recently been manufactured by high-density plasma (HDP) in order to improve the processing efficiency in the etching or cleaning effect. In particular, by the inductively coupled plasma application, low energy (ie, several electron volts (eV)) can be used to produce 1 × ιηη ～ 2χιιιη 2 Ϊ 立 / cubic centimeter, which is enough to make ions hit the target. In the conventional semiconductor device manufacturing equipment for making helical coils, a real coil is arranged on the outside of a quartz dome, and the quartz dome is connected to a part of the helical antenna coil wrapped around the quartz. Dome

ΪΗ 557509 5. Description of the invention (2) Outer surface. Then, an RF current (between about 100 KHz and about 100 MHz) is passed through the antenna coil. When the RF power is applied while operating in a resonance mode, the RF current circulating in the spiral antenna coil generates an axial RF magnetic field in a processing chamber surrounding the antenna coil. When the plasma is ignited (that is, the gas in the processing chamber is partially ionized due to the impact of the electrons), the RF magnetic field causes a circulating RF electron flow, so that the gas in the enclosed chamber maintains a high-concentration plasma state. This structure can be regarded as an RF transformer, so that the antenna coil is used as the primary winding of the RF transformer, and the plasma itself is used as the secondary winding of the RF transformer. However, such an inductive coupling plasma has a problem that it is easily uneven and forms a ring shape over the substrate in the processing chamber. In other words, a hollow effect is exhibited 'and the lower plasma concentration is shown above the central portion of the substrate. This hollow effect has an adverse effect on the entire surface of the substrate, which ensures a uniform processing size. In addition, since the antenna coil windings are connected in series with each other, it is difficult to obtain a uniform plasma. The antenna coil in conventional equipment is generally made of copper, and a cooler for the antenna coil is provided to avoid the temperature of the antenna coil from being increased by the heat of the plasma during the high-concentration plasma treatment. Although the copper is a thermal conductor ', it is preferable to use a thermally conductive material better than copper as the wire set of the antenna coil. In addition, when a cooler for an antenna coil is used to keep the temperature of the antenna coil winding low, the temperature difference may cause thermal shock to the winding. Therefore, the antenna coil winding may be fatigued and eventually damaged. Because of the high temperature in the processing chamber and the lower temperature of the antenna coil, it is difficult for the atmosphere of the processing chamber to become a stable high temperature at the beginning of the method.

557509

The tool will be hot handed to the other tools, curved, and curved for explanation, and [preferred parts will be available if possible. Changing the medium is still the first and the second, at least one, and the gas should be solved above it. I want to refer to the detailed description of the embodiment for details. All drawings are looped into the space of the loop antenna. The frequency power has a high frequency greater than 1 MHz. A body line surrounds the end of the ring-shaped fixed substrate body line toward the tool substrate of the fixed substrate to inject the processing gas upward. The general description and the following detailed description serve as examples and provide further explanation of the patented invention. Detailed description] The embodiment of the present invention will be described in the drawings. Where applicable, the same reference numerals are used to refer to the same or similar. Fig. 1A is a schematic diagram illustrating a high-concentration plasma processing apparatus according to a first embodiment of the present invention. As shown, the high-concentration plasma processing apparatus includes a processing chamber 100 having a side wall, an upper wall, and a lower wall. The upper wall of the processing chamber 100 has a flat upper surface, and a resonant antenna coil 102 is formed on the upper wall of the processing chamber 100. The resonance antenna coil 102 is connected to a first RF power source 104, which supplies the resonance antenna coil 102 with high-frequency power at a frequency of 13.56 MHz. The winding (often referred to as the antenna) of this resonant antenna coil 102 is a hollow tube. In addition, the winding (or antenna) of the resonant antenna coil 102 is made in Lu (A1), and the surface of the winding is coated with silver (Ag). Reference is now made to Figures 2 A and 2 B 'to the reference antenna antenna 102. FIG. 2A is a schematic diagram showing the structure of the resonant antenna coil 102, and FIG. 2β is a diagram showing the same circuit of FIG. 2A. Referring to FIG. 2A, the resonant antenna coil 102 includes first, second,

Page 11 557509 V. Description of the invention (7) " — Now referring back to the figure 丨, the heater 106 supplying heat to the atmosphere of the processing chamber 丨 〇〇 is fixed above the resonant antenna coil 〇〇2. The resonance antenna coil 102 is also connected to an antenna heating device 108, which heats the heat exchange medium into the hollow tube antenna coil, and keeps the resonance antenna coil 102 at 50 to 1. The number of degrees Celsius (^.). The heat exchange medium from the antenna heating device 108 is circulated through the hollow tube antenna coil 02, and then discharged to the outside through the exhaust pipe 107. In the first embodiment of the present invention, Because the antenna coil is installed on the flat surface of the upper wall of the processing chamber 100, the aforementioned hollow effect can be avoided; it is very different from the dome spiral winding around the top of the dome chamber (such as a quartz dome). In addition, The antenna parts are connected in parallel with each other and then become resonant, so a plasma with better uniformity can be made. In addition, not only the winding of this antenna coil is made of silver-coated aluminum hollow tube instead of copper, but also the antenna coil 丨〇2 uses an antenna heating device 108 instead of the cooler to maintain a fixed temperature. Therefore, because of this structure, after applying high-frequency power, during the plasma treatment, that day Thermal shock does not occur in the wire coil 102. In other words, because the antenna heating device 108 passes the heat exchange medium through the inside of the hollow tube antenna, the temperature difference will not be large enough to cause thermal shock. In addition, 'Reference In FIG. 1A, the second and third gas lines 110a, 110b, and 110c that supply and distribute the gas are assembled in the processing chamber 100 to obtain a uniform plasma concentration. The first gas line 11a is located at The top side portion of the processing chamber 丨 丨 〇, and the second gas line is located at the top central portion of the processing chamber 丨 1 0. In particular, the third gas line 丨 0c surrounds the ring-shaped base 丨 丨 2,

Page 13 557509 1. Description of the invention (8) ~ " " Moreover, the end of the third gas line 11oc is bent toward the base 112 and bent above it, as shown in FIG. 1A. Because the processing gas injected from the first and second gas lines 1103 and 1101) is randomly distributed on the substrate 114, the base 112, and the inner side wall of the processing chamber 110, the processing is reduced. Processing efficiency. Therefore, a ring-shaped third gas line 10c located around the base 112 is needed to improve the efficiency of the processing gas involved in the plasma treatment. In addition, a core power source 116 of the substrate 14 is connected to the base 112 and supplies high-frequency power at a frequency of 2 to 4 Mhz. . In this way, a plasma dry cleaning process can be performed on the inner surface of the processing chamber 1000. Fig. 1B is a schematic diagram illustrating a high-concentration plasma processing apparatus according to a second embodiment of the present invention. Since the high-concentration plasma processing apparatus described in FIG. 1B is similar to the first embodiment, a detailed explanation will be omitted. Referring to Fig. 1B, the upper wall of the processing chamber 100a is trapezoidal and has a flat upper surface. As such, the processing chamber 100a of the second embodiment has an upper wall similar to a frustoconical or polyhedral shape. An antenna coil 02a is mounted on the flat upper surface of the upper wall. However, the antenna coil 102a may be installed at an inclined position on the upper wall of the processing chamber 100a. Fig. 1C is a schematic diagram illustrating a high-concentration plasma processing apparatus according to a third embodiment of the present invention. As shown, the processing chamber 100b has a frustoconical or polyhedron-shaped upper wall similar to the second embodiment. However, instead of the antenna coil, a plasma electrode 丨 8 that biases the substrate 1 丨 4 is formed on the flat upper surface of the upper wall. In addition, the resonant antenna coil 102b is installed at an inclined position on the upper wall of the processing chamber 1001). The first RF power source 104 is connected to the resonant antenna coil 102b,

557509 V. Description of the invention (10) The degree is 5530 angstroms, and the standard of the substrate is 60. 9 angstroms. Compared with the prior art, these average thicknesses and standards indicate that the thickness uniformity of the deposited layer is greatly improved. ^ As mentioned above, during the manufacturing of the semiconductor device, the high-concentration plasma is used, and a high processing uniformity can be achieved on and above the surface of the large-sized substrate processed in the processing. Therefore, the high-concentration plasma processing equipment can be used for gap filling, chemical vapor deposition, sputtering and the like. Those skilled in the art will understand that without breaking

White 'without departing from the spirit and scope of the present invention. Therefore, the prerequisites within the scope of these improvements and their equivalents 557509

The drawings and the like are used to provide a further understanding of the present invention, and / or the combination of the two, and form a part of the specification, which lists the embodiments of the present invention and explains the principles of the present invention together with the description. In this special drawing: FIG. 1A is a schematic diagram illustrating a high-concentration plasma processing apparatus according to a first embodiment of the present invention; FIG. 1B is a schematic diagram illustrating a high-concentration plasma processing apparatus according to a second embodiment of the present invention; The schematic diagram of the high-concentration plasma processing equipment of the third embodiment; FIG. 2A is a schematic diagram showing the structure of the resonant antenna coil; FIG. 2B is a diagram showing the same circuit of FIG. 2A; A graph at a position other than the center point of the substrate to show the comparison between the effect of the present invention and the effect of conventional technology. Fig. 4 is a two-dimensional outline view of a silicon oxide layer having a uniform thickness. The stone oxide layer is formed by a sputtering method on a silicon substrate using the first embodiment of the present invention. FIG. 5 is a two-dimensional outline view of a silicon oxide layer having a uniform thickness. The silicon oxide layer is formed by a chemical vapor deposition method on a silicon substrate using a second embodiment of the present invention. [Symbol description] 100, 100a, 100b processing chamber

$ Π pages

Claims (1)

557509 _Case No. 90116919_ 年月 日 __ VI. At least one gas line in the scope of the patent application surrounds the tool for the fixed substrate in a ring shape, and the end of the gas line is bent toward the tool for the fixed substrate and bent to Up to inject the process gas upwards. 7. A high-concentration plasma processing equipment, which generates a highly uniform plasma, the equipment includes: a processing chamber that provides a closed plasma generation space, and a flat surface on the upper wall; a number of gas lines, It injects processing gas into the processing chamber; a plasma electrode that receives the first high-frequency power and is mounted on a flat surface on the upper wall of the processing chamber; several loop antennas that are mounted on the flat surface on the upper wall of the processing chamber A resonant antenna coil that receives the second high-frequency power and includes several loop antennas and variable capacitors, each variable capacitor being connected in series with each loop antenna in order to maintain the A state of resonance; a tool for heating the resonant antenna coil using a heat exchange medium; and a tool for fixing a substrate in the processing chamber so as to be parallel to a flat surface of an upper wall of the processing chamber. 8. For the high-concentration plasma processing equipment in item 7 of the scope of application for patent, in which several loop antennas of the antenna coil are hollow tubes with a space inside. 9. The high-concentration plasma processing equipment according to item 8 of the application, wherein the loop antennas of the antenna coil are made of silver-coated aluminum (A 1). 10. If the high-concentration plasma processing equipment in item 8 of the patent application scope, Page 20 557509 _Case No. 90116919_ Year Month Amendment_ VI. Scope of Patent Application The tool for heating the antenna coil circulates the heat exchange medium into the space of the loop antennas. 11. The high-concentration plasma processing equipment according to item 7 of the application, wherein the first and second high-frequency powers have a high frequency of 1 MHz or more. 1 2. If the high-concentration plasma processing equipment of item 7 of the patent application scope, wherein at least one gas line surrounds the tool for the fixed substrate in a ring shape, and the end of the gas line is bent toward the tool for the fixed substrate and bent Go above it to inject the process gas upwards. Page 21