TW556305B - Wafer holder protecting wafer against electrostatic breakdown - Google Patents

Wafer holder protecting wafer against electrostatic breakdown Download PDF

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Publication number
TW556305B
TW556305B TW091119657A TW91119657A TW556305B TW 556305 B TW556305 B TW 556305B TW 091119657 A TW091119657 A TW 091119657A TW 91119657 A TW91119657 A TW 91119657A TW 556305 B TW556305 B TW 556305B
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TW
Taiwan
Prior art keywords
wafer
holder
liquid
metal plate
fluid flow
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Application number
TW091119657A
Other languages
Chinese (zh)
Inventor
Masayoshi Kasahara
Masamichi Kudou
Yasunori Watanabe
Tomotake Morita
Yoshirou Ishiguro
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Nec Electronics Corp
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Publication of TW556305B publication Critical patent/TW556305B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • B24B41/068Table-like supports for panels, sheets or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Abstract

A wafer holder includes a mounting plate for mounting a wafer and having a plurality of fluid holes, a decompressor for absorbing the wafer toward the mounting plate while sucking air between the mounting plate and the wafer through the fluid holes, and a liquid supply unit for supplying a liquid toward the wafer to release the wafer from the wafer holder. The liquid has a specific resistance lower than the specific resistance of water.

Description

556305 五、發明說明(1) 【發明領域】 本發明係有關於一種防護晶圓靜電破壞之晶圓支架, 特別係有關於一種晶圓支架,將晶圓由生產線傳遞至::機 台’如傳遞至一研磨裝置。 【先前技術】 晶圓上具有複數個半導體裝置,當晶圓表面欲設置半 、體破置被小元件的5亥面有電荷時,電荷的靜電力會影響 半導體裝置與晶圓的相互連結,或影響阻障層的形二。/曰 例如專利jp —A-6-123924 及 jp —A-U-289004 中揭露一 種支架,用以將晶圓由生產線傳遞到研磨裝置。 在專利JP-A-6-123924中揭露的支架,一脫離裝置或 釋放元件提供一正壓氣體的吸力於晶圓支架與晶圓之間, 用=釋放晶圓,其中上述的正壓氣體為離子化氣體。離子 化氣體抵銷了接觸於晶圓的靜電。 在專利JP-A- 1 1 -289004中揭露的支架,一釋放元件提 供水或混合水的氣體於支架與晶圓之間用以由支架釋放晶 圓。如此一來,水的極性抵銷了殘留於支架與晶圓表面 電荷。 在研讀上述已揭露的支架後,發現晶圓的靜電破壞可 能是由於晶圓支架與晶圓的摩擦而在晶圓上產生靜電。更 詳細的來說,無論是專利jp_A —6 — 1 23 9 24中所使用的離子 化氣體,或是專利JP-Α-Π-289004中所使用的水,均具有 較大的電阻係數而無法完全耗盡靜電,使晶圓不受到靜電556305 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a wafer holder for protecting the wafer from electrostatic damage, and particularly relates to a wafer holder for transferring wafers from a production line to :: machines such as Passed to a grinding device. [Previous technology] There are multiple semiconductor devices on the wafer. When the surface of the wafer is to be half-set and the body is charged with a small element, the electrostatic force of the charge will affect the interconnection between the semiconductor device and the wafer. Or affect the shape of the barrier layer. / For example, patents jp-A-6-123924 and jp-A-U-289004 disclose a holder for transferring wafers from a production line to a polishing device. In the holder disclosed in the patent JP-A-6-123924, a release device or a release element provides a suction force of a positive pressure gas between the wafer holder and the wafer, and the release wafer is used, wherein the above-mentioned positive pressure gas is Ionized gas. The ionized gas counteracts the static electricity that comes into contact with the wafer. The holder disclosed in the patent JP-A-1 1 -289004, a release element provides a gas for supplying or mixing water between the holder and the wafer to release the wafer from the holder. In this way, the polarity of the water offsets the charge remaining on the surface of the holder and the wafer. After studying the above-mentioned disclosed bracket, it was found that the electrostatic damage of the wafer may be due to the friction between the wafer bracket and the wafer, which caused static electricity on the wafer. In more detail, whether it is the ionized gas used in the patent jp_A — 6 — 1 23 9 24 or the water used in the patent JP-A-Π-289004, it has a large resistivity and cannot be used. Completely deplete static electricity so wafers are not exposed to static electricity

2133-5160-PF(N);Cat.ptd 556305 五、發明說明(2) 的破壞。 【發明概要 因此,本發明的目的就 支架,能有效地防護晶圓避 脫離晶圓支架時。 根據本發明之一種防護 括:一金屬板支架,用於放 孔,形成於金屬板支架上; 流體流通孔連通,用以吸取 及一液體供給單元,選擇性 體流通孔供應液體,上述之 本實施例更提供一種利 處理晶圓的方法,包括下列 間的空氣經由流體流通孔被 住;以及當供應一液體,其 時,晶圓由金屬板支架脫離 根據本發明之晶圓支架 晶圓的電阻係數能有效的保 靜電的破壞,因為較低電阻 上的靜電,此靜電是來自於 的。 為使本發明之上述及其 易懂,下文特舉數個具體之 是提供一種支撐晶圓用之晶圓 免靜電破壞,尤其是當晶圓在 晶圓靜電破壞之晶圓支架,包 置一晶圓;至少一流體流通 一流體排出單元,選擇性的與 由流體流通孔排出之液體;以 的與流體流通孔連通,且由流 液體的電阻係數低於晶圓。 用具有流體流通孔的金屬支架 步驟:當晶圓與金屬板支架之 抽出時,晶圓被金屬板支架吸 電阻係數低於晶圓的電阻係數 〇 及方法’液體的電阻係數低於 護晶圓上的微小元件避免受到 係數的液體能有效的消除晶圓 晶圓由晶圓支架上脫離而產生 他目的、特徵和優點能更明顯 較佳實施例,並配合所附圖式2133-5160-PF (N); Cat.ptd 556305 V. Destruction of Invention (2). [Summary of the Invention Therefore, the object of the present invention is a stent, which can effectively protect a wafer from detachment from a wafer holder. A protective cover according to the present invention includes: a metal plate support for placing holes formed on the metal plate support; fluid flow holes communicating for suction and a liquid supply unit for selectively supplying liquid through the body flow holes, the above-mentioned essence The embodiment further provides a method for facilitating the processing of a wafer, including the following air being held through a fluid flow hole; and when a liquid is supplied, the wafer is detached from the wafer holder wafer by the metal plate holder according to the present invention. The resistivity can effectively protect the static electricity from damage, because the static electricity on the lower resistance comes from this static electricity. In order to make the above of the present invention easy to understand, several specific examples are provided below to provide a wafer for supporting wafers without electrostatic damage, especially when the wafer is electrostatically damaged in a wafer holder. Wafer; at least one fluid is circulated and a fluid discharge unit is selectively connected to the liquid discharged from the fluid circulation hole; and the fluid resistance is lower than the wafer by communicating with the fluid circulation hole. Steps of using a metal holder with a fluid flow hole: When the wafer and the metal plate holder are withdrawn, the resistance of the wafer being absorbed by the metal plate holder is lower than that of the wafer. The small components on the circle are protected from the liquid of the coefficient. The wafer can be effectively removed from the wafer holder to produce other purposes, features and advantages. The preferred embodiment can be more obvious.

556305 五、發明說明(3) 做詳細說明 【貫施方式】 以下以具體之實施例,對本發明揭示之各形態内容加 以詳細說明。 根據本發明的實施例中,晶圓支架是適用於化學機械 研磨(CMP)裝置。此化學機械研磨裝置經由晶圓支架從生 產線接收晶圓,對準放置晶圓於研磨頭的中心上,然後研 磨晶圓。 晶圓支架是用於吸住放置於其上的晶圓,且利用液體 從吸住狀態而使晶圓脫離。 在本發明的一個實施例中,當晶圓被機械手臂放置於 晶圓支架的金屬板支架上時,流體排出機構被選擇與流體 流通孔連通用以吸住晶圓,其是利用流體流通孔抽吸晶圓 支架附近的空氣而使晶圓被吸住,且由流體排出機構排放 空氣。 然後晶圓支架使晶圓由吸住狀態脫離,此時晶圓是在 化學機械研磨裝置的中心位置。在此階段,液體供給單元 被選擇與流體流通孔連通,經過流體流通孔對金屬板支架 上的晶圓供應液體。因此,晶圓由金屬板支架脫離,且在 金屬板支架上漂浮於液體之上。 液體供給單元在混合器裡預備了電阻係數低於水的液 體。此液體利用一調節器供應至流體流通孔,此液體具有 既定之壓力以及既定之流速。流體流通孔由晶圓支架的背556305 V. Description of the invention (3) Detailed explanation [Implementation mode] The following describes the various embodiments and contents disclosed in the present invention in detail with specific embodiments. According to an embodiment of the present invention, the wafer holder is suitable for a chemical mechanical polishing (CMP) device. This chemical mechanical polishing device receives wafers from a production line via a wafer holder, aligns the wafers on the center of the polishing head, and then grinds the wafers. The wafer holder is used to suck the wafer placed thereon, and use the liquid to detach the wafer from the sucked state. In one embodiment of the present invention, when the wafer is placed on the metal plate holder of the wafer holder by the robot arm, the fluid discharge mechanism is selected to communicate with the fluid flow hole to suck the wafer, which uses the fluid flow hole The wafer is sucked by the air near the wafer holder, and the air is discharged by the fluid discharge mechanism. The wafer holder then releases the wafer from the suction state. At this time, the wafer is at the center of the chemical mechanical polishing device. At this stage, the liquid supply unit is selected to communicate with the fluid flow hole, and the wafer on the metal plate holder is supplied with liquid through the fluid flow hole. Therefore, the wafer is detached from the metal plate holder and floats on the metal plate holder above the liquid. The liquid supply unit prepares liquid in the mixer with a resistivity lower than that of water. The liquid is supplied to the fluid flow hole by a regulator, and the liquid has a predetermined pressure and a predetermined flow rate. The fluid flow hole is from the back of the wafer holder

2133-5160-PF(N);Cat.ptd 第7頁 5563052133-5160-PF (N); Cat.ptd p. 7 556305

面提供液體到晶圓的表面上。 由於流體流通孔提供的液體其電阻係數低於水,晶圓 上的微小元件得以受到此液體的保護以避免靜電破壞阳2 液體最好是電阻係數等於或小於〇· 5Μ Ω—cm,如此一來晶 ,上的微小元件幾乎沒有因靜電而產生的電場而不受流曰曰 k通孔所供應之流體的壓力或流速所影響。 ~ 電阻係數低於水的液態二氧化碳或氨水是較適用的 體。二氧化碳對人體健康較不產生影響,且在處理時較 需要特殊的設備去控制。氨水同樣在處理時較不需要特殊 的叹備去控制。二氧化碳較好的原因是其沒有刺鼻的臭 在本發明的一個實施例中 在金屬板支架上連結的表 v ^/1、-i— ^ 曰口 表 面具有複複數個流體流通孔,具有低電阻係數 液體^較適合防護晶圓上的微小元件避免被 句活§兒,低流速的液體將使晶圓的移動速度變慢,此動 是晶圓因為流體流通孔供應的液體而自晶圓支^而严離 在此例中,在流體流通孔開始供應液體至晶圓漂離2 ; 架可能需要一段時間,否則晶圓的傳遞可能由於晶 ^ 完成脫離晶圓支架而失敗。 禾 利用一調節器以及複複數個流體流通孔儲存並 阻係數低於水的液體,帶電的晶圓上的靜電可被壓了 — 數個流體流通孔20可降低液體的流速並可提供合適複 使得晶圓1 2以合適的速度與金屬板支架1 8分離。 ^速 複數個流體流通孔2 0排列於金屬板支架1 8上並 J 亚具有大The surface provides liquid to the surface of the wafer. Because the resistivity of the liquid provided by the fluid flow hole is lower than that of water, the micro-components on the wafer can be protected by this liquid to prevent electrostatic damage. 2 The resistivity of the liquid is preferably equal to or less than 0.5M Ω-cm. The micro-elements on Lai Jing have almost no electric field due to static electricity and are not affected by the pressure or flow rate of the fluid supplied by the through-hole. ~ Liquid carbon dioxide or ammonia with a resistivity lower than water is a more suitable body. Carbon dioxide has less impact on human health and requires special equipment to control it during processing. Ammonia also requires less special control during processing. The reason why carbon dioxide is better is that it does not have a pungent odor. In one embodiment of the present invention, the table v ^ / 1, -i- ^ connected to the metal plate support has a plurality of fluid flow holes on the mouth surface, which has a low The resistivity liquid ^ is more suitable for protecting the tiny components on the wafer from being sentenced. Low-flow liquid will slow down the movement speed of the wafer. This movement is caused by the liquid supplied from the fluid flow hole from the wafer. In this example, the supply of liquid at the fluid flow hole to the wafer drift 2 is started; the rack may take some time, otherwise the transfer of the wafer may fail due to the completion of the separation of the wafer from the wafer holder. He uses a regulator and a plurality of fluid flow holes to store liquids with a coefficient of resistance lower than water, and the static electricity on the charged wafer can be suppressed-several fluid flow holes 20 can reduce the flow rate of the liquid and provide suitable recovery. The wafer 12 is separated from the metal plate holder 18 at a suitable speed. The speed of the plurality of fluid flow holes 20 is arranged on the metal plate support 18 and the J

2133-5160-PF(N);Cat.ptd 第8頁 556305 五、發明說明(5) 半徑的開口’且以一定的密度排列於金屬板支架丨8之上, 此設定使得液體的壓力可維持定值,並提高晶圓丨2脫離金 屬板支架1 8的速度。 每個流體流通孔2 〇具有漏斗型的外觀位於金屬板支架 1 8的表面,因此可降低流體流通孔2〇的單位面積裡的液體 流速,藉以壓制晶圓1 2的靜電。 本發明的晶圓支架1〇提供數個喷嘴21,每個噴嘴21具 有複數個流體流通孔2 〇,此設定可降低晶圓丨2上單位面積 的液體流速,以壓制晶圓丨2上的靜電及提高晶圓丨2脫離金 屬板支架18的速度。 晶,支架10具有純水供給單元32及一調節器38位於純 水供給單元32的下游部份以控制純水的壓力及流速, 支架10可選擇由液體供給單元3〇供應液體或純 3 2供應純水。 、π u 當經由流體流通孔2〇供應液體時,化學機械研磨 (CMP)裝置的研磨頭16經由晶圓支架1〇清洗,雖狹液體的 ,力及流^釋放到晶圓12的過程巾被控制著,以保護晶 圓1 2上的微小兀素,但在清洗研磨裝置時則不需要控制, 再者,,洗研磨頭16時最好具有較高之壓力及流速。 接著,本發明將更詳盡的配合附圖 】圖’-晶圓支架1Q ’根據本發明的實 ^據第 的過程中做為傳送生產線上的晶圓】 頭1 6之用。 ,尽衣且w铒错 一晶圓1 2 以一機械手臂由生產、線傳送至晶圓支架102133-5160-PF (N); Cat.ptd Page 8 556305 V. Description of the invention (5) Radius openings' are arranged on the metal plate support with a certain density. This setting allows the pressure of the liquid to be maintained Set the value and increase the speed at which the wafer 2 leaves the metal plate holder 18. Each fluid flow hole 20 has a funnel-shaped appearance and is located on the surface of the metal plate holder 18, so the liquid flow rate per unit area of the fluid flow hole 20 can be reduced, thereby suppressing the static electricity of the wafer 12. The wafer holder 10 of the present invention provides a plurality of nozzles 21, each of which has a plurality of fluid flow holes 20, and this setting can reduce the liquid flow rate per unit area on the wafer 2 to suppress the pressure on the wafer 2 Static electricity and increase the speed of the wafer 2 from the metal plate holder 18. The cradle 10 has a pure water supply unit 32 and a regulator 38 located downstream of the pure water supply unit 32 to control the pressure and flow rate of pure water. The cradle 10 can choose to be supplied with liquid or pure 3 2 by the liquid supply unit 30. Supply of pure water. When the liquid is supplied through the fluid circulation hole 20, the polishing head 16 of the chemical mechanical polishing (CMP) device is cleaned through the wafer holder 10. Although the liquid is narrow, the force and flow are released to the process towel of the wafer 12. It is controlled to protect the tiny elements on the wafer 12, but it does not need to be controlled when cleaning the polishing device. Furthermore, it is preferable to have a higher pressure and flow rate when cleaning the polishing head 16. Next, the present invention will cooperate with the drawings in more detail. FIG. ′ -Wafer holder 1Q ′ is used as a wafer in the production line during the process according to the invention. The head 16 is used. Do the right thing and do the wrong thing. A wafer 1 2 is transferred from the production line to the wafer holder 10 by a robotic arm.

2133-5160-PF(N);Cat.ptd 第9頁 556305 五、發明說明(6) 並由定位器1 4定位於晶圓支架1 〇上,由研磨頭1 6失持及懸 吊並以垂直軸為中心可在垂直方向移動,接著傳送至化學 機械研磨(CMP)裝置,晶圓支架1〇吸住並支撐晶圓12且定 位於其上,然後再由吸住狀態釋放晶圓1 2,並傳送晶圓j 2 於生產線及化學機械研磨(CMP)裝置之間。 在本實施例中,晶圓1 2形成有微小元素的主表面是背 對於晶圓支架1 0的另一側,而晶圓1 2的底表面是與研磨頭 1 6相對,然而,晶圓1 2的主表面與底表面亦可各自相對於 研磨頭1 6及晶圓支架1 0。 一晶圓支架10包含一具有平滑上表面的金屬板支架 18,金屬板支架18的上表面具有複數個流體流通孔2〇,並 由金屬板支架1 8的下表面與一管路2 2連通,流體流通孔2 〇 可被選擇的與流體排出單元28、液體供給單元30或純水供 給單元32經由一管路22、一第一選擇閥24及第二選擇閥26 而連通。 當第一選擇閥2 4及第二選擇閥2 6皆位於第一位置,則 流體流通孔20與流體排出單元2 8相連通,而當第一選擇閥 2 4與第一選擇閥2 6分別選擇第一位置及第二位置時,則流 體流通孔20與純水供給單元3 2相連通,當第二選擇閥26選 擇第二位置,則流體流通孔2〇與液體供給單元3〇相連通。 流體排出單元28具有由流體流通孔2〇吸出金屬板支架 1 8上方空氣的功能,流體排出單元2 8與一氣體減壓器或真 空幫浦相連通來減低流體排出單元2 8的内部壓力,由流體 排出單元28吸出的流體排出單元28及固體微粒由一減壓器2133-5160-PF (N); Cat.ptd Page 9 556305 V. Description of the invention (6) Positioned by the positioner 14 on the wafer holder 10, the grinding head 16 is lost and suspended and suspended by The vertical axis can be moved in the vertical direction as the center, and then transferred to the chemical mechanical polishing (CMP) device. The wafer holder 10 sucks and supports the wafer 12 and positions it on it, and then releases the wafer from the sucked state 1 2 The wafer j 2 is transferred between the production line and the chemical mechanical polishing (CMP) device. In the present embodiment, the main surface on which the minute elements are formed on the wafer 12 is the other side facing away from the wafer holder 10, and the bottom surface of the wafer 12 is opposite to the polishing head 16; however, the wafer The main surface and the bottom surface of 12 may also be opposite to the polishing head 16 and the wafer holder 10, respectively. A wafer support 10 includes a metal plate support 18 having a smooth upper surface. The upper surface of the metal plate support 18 has a plurality of fluid flow holes 20, and is communicated with a pipeline 22 through the lower surface of the metal plate support 18. The fluid flow hole 20 may be selectively communicated with the fluid discharge unit 28, the liquid supply unit 30, or the pure water supply unit 32 through a pipeline 22, a first selection valve 24, and a second selection valve 26. When the first selection valve 24 and the second selection valve 26 are both in the first position, the fluid circulation hole 20 is in communication with the fluid discharge unit 28, and when the first selection valve 24 and the first selection valve 26 are respectively When the first position and the second position are selected, the fluid flow hole 20 communicates with the pure water supply unit 32, and when the second selection valve 26 selects the second position, the fluid flow hole 20 communicates with the liquid supply unit 30 . The fluid discharge unit 28 has the function of sucking out the air above the metal plate support 18 through the fluid circulation hole 20. The fluid discharge unit 28 is in communication with a gas pressure reducer or vacuum pump to reduce the internal pressure of the fluid discharge unit 28. The fluid discharge unit 28 and the solid particles sucked out by the fluid discharge unit 28 are passed through a pressure reducer.

556305 五、發明說明(7) " ---- 收集槽收集且排放之系統之外,在本實施例中,空氣,氮 或惰性氣體經由第三選擇閥34選擇性的注入管路22之中。 人#液體供給單元3 〇包含一混合裝置3 6及一調節器3 8,混 :凌置3 6預備具有特定濃度的液態二氧化碳藉由將二氧化 奴溶解^水中來調整,二氧化碳可由其他氣體替代。 本實施例中使用的液態二氧化碳具有〇. 5M cm或更 低的導電係數,具有〇 · 5Μ Ω _ cm或更低的導電係數之液態 二氧化碳可有效的避免晶圓12上微小元素受靜電破壞,〜而 與由流體流通孔20注入之液體的壓力及流速無關。 ^調節器38設置於混合裝置36及第一選擇閥24之間。調 節器38具有儲存欲供應至混合装置36之液態二氧化碳,以 及將所儲存之液態二氧化碳以一既定壓力與一既定流速, 經由管路22供應至流體流通孔2〇的功能。 ^純水供給單元32具有由純水錄存槽(圖上無顯示)經由 管路22及第一選擇閥24提供純水給流體流通孔2〇的功能, 純水供給單元32經管路22供應純水給研磨頭16做研磨用, 在此必須注意本系統中純水供給單元32含另一調節器,而 純水的壓力及流速則由此調節器控制。 根據第2圖,金屬板支架18的表面上具有複複數個流 體流通孔20,每個流體流通孔2〇的橫切面為細長狀且以放 射方向朝外延伸,數個細長的流體流通孔2〇以四個方向排 列於金屬板支架1 8的表面且互相呈9 〇。。 在液體供給單元30由流體流通孔2〇注入液體的過程 中,為了保護晶圓1 2上的微小元素避免受到靜電破壞,液556305 V. Description of the invention (7) " ---- In addition to the system collected and discharged by the collection tank, in this embodiment, air, nitrogen or inert gas is selectively injected into the pipeline 22 through the third selection valve 34 in. Person # liquid supply unit 3 〇 includes a mixing device 36 and a regulator 3 8, mixing: Ling set 3 6 prepares liquid carbon dioxide with a specific concentration by dissolving slave dioxide in water to adjust, carbon dioxide can be replaced by other gases . The liquid carbon dioxide used in this embodiment has a conductivity of 0.5M cm or less, and liquid carbon dioxide with a conductivity of 0.5M Ω _ cm or less can effectively prevent the minute elements on the wafer 12 from being damaged by static electricity. It has nothing to do with the pressure and flow rate of the liquid injected through the fluid flow hole 20. The regulator 38 is disposed between the mixing device 36 and the first selection valve 24. The regulator 38 has a function of storing liquid carbon dioxide to be supplied to the mixing device 36, and supplying the stored liquid carbon dioxide to the fluid circulation hole 20 through a pipe 22 at a predetermined pressure and a predetermined flow rate. ^ The pure water supply unit 32 has the function of supplying pure water to the fluid circulation hole 20 through the pipeline 22 and the first selection valve 24 from a pure water storage tank (not shown in the figure). The pure water supply unit 32 is supplied through the pipeline 22 Pure water is used for grinding the grinding head 16. It must be noted here that the pure water supply unit 32 in this system contains another regulator, and the pressure and flow rate of the pure water are controlled by this regulator. According to FIG. 2, the surface of the metal plate holder 18 has a plurality of fluid flow holes 20. The cross-section of each fluid flow hole 20 is elongated and extends outward in the radial direction. The plurality of elongated fluid flow holes 2 〇 It is arranged on the surface of the metal plate holder 18 in four directions and is 90% with each other. . In the process of injecting liquid into the liquid supply unit 30 through the fluid circulation hole 20, in order to protect the tiny elements on the wafer 12 from electrostatic damage, the liquid

556305 五、發明說明(8) 體的壓力及流速必須減低’在本實施例中,經由金屬板支 架1 8所提供的複複數個流體流通孔2 〇,使液體穩定的由流 體流通孔2 0注向晶圓1 2,因此可減低液體的壓力及流速, 複複數個流體流通孔2 0可確保一定的流速以提供晶圓丨2脫 離金屬板支架18所需的速度。 為了減低流體流通孔2 0開口中液體的壓力,流體流通 孔2 0在流體流通孔2 0的上端開口具有較大的橫切面。 根據第3 A圖,另一個金屬板支架1 9的實施例用於第1 圖的晶圓支架1 0,具有複數個喷嘴2 1,每個喷嘴2 1的頂面 皆與金屬板支架1 9的表面齊平。根據第3 B圖,每個喷嘴2 1 具有複複數個流體流通孔20’於喷嘴21的頂部,每一噴嘴 2 1上的每一流體流通孔2 〇,於喷嘴2 1的底部與第i圖中的管 路22連通’當液體供給單元3〇經由管路22提供液體至噴嘴 2 1時,液體經由各個流體流通孔2 〇,以較低的流速供應至 晶圓12的主表面上。 流體流通孔2 0 ’形成於喷嘴2 1上以減低晶圓1 2主表面 上單位面積的流速’在此朝向晶圓1 2表面的流速被減低以 壓制晶圓1 2的靜電,而不影響到晶圓1 2脫離金屬板支架j 8 的速度,因此,晶圓1 2可以快速的傳送至下一製程的生產 站0 化學機械研磨(CMP)裝置藉由晶圓支架1〇夾持及釋放 晶圓1 2狀態清楚地描述於第!圖中,晶圓1 2由化學機械研 磨(CMP)裝置傳送至生產線後,定位器14處於釋放晶圓12 的狀態,金屬板支架1 8則於垂直方向脫離研磨頭丨6,第一556305 V. Description of the invention (8) The pressure and flow rate of the body must be reduced. In this embodiment, the plurality of fluid flow holes 20 provided by the metal plate bracket 18 are used to stabilize the liquid through the fluid flow holes 2 0. The injection is directed to the wafer 12 so that the pressure and flow rate of the liquid can be reduced. The plurality of fluid flow holes 20 can ensure a certain flow rate to provide the speed required for the wafer 2 to escape from the metal plate holder 18. In order to reduce the pressure of the liquid in the opening of the fluid circulation hole 20, the opening of the fluid circulation hole 20 at the upper end of the fluid circulation hole 20 has a large cross-section. According to FIG. 3A, another embodiment of the metal plate holder 19 is used for the wafer holder 10 of FIG. 1. It has a plurality of nozzles 21, and the top surface of each nozzle 21 is connected to the metal plate holder 19. The surface is flush. According to FIG. 3B, each nozzle 21 has a plurality of fluid passage holes 20 'on the top of the nozzle 21, and each fluid passage hole 20 on each nozzle 21 is located at the bottom of the nozzle 21 and the i-th. The pipeline 22 in the figure is connected. When the liquid supply unit 30 supplies the liquid to the nozzle 21 through the pipeline 22, the liquid is supplied to the main surface of the wafer 12 at a lower flow rate through the respective fluid circulation holes 20. The fluid flow hole 20 is formed on the nozzle 21 to reduce the flow rate per unit area on the main surface of the wafer 12. Here, the flow rate toward the surface of the wafer 12 is reduced to suppress the static electricity of the wafer 12 without affecting The speed at which the wafer 12 is released from the metal plate holder j 8, so that the wafer 12 can be quickly transferred to the production station of the next process. The chemical mechanical polishing (CMP) device is held and released by the wafer holder 10 Wafer 1 2 status is clearly described in section! In the figure, after the wafer 12 is transferred to the production line by a chemical mechanical polishing (CMP) device, the positioner 14 is in a state of releasing the wafer 12, and the metal plate holder 18 is separated from the polishing head in a vertical direction.

556305 發明說明(9) 選擇閥24及第二選擇閥26位於初始位置上,其中,管路22 係與流體排出單元28、液體供給單元3〇或純水供給單元32 斷絕的。 在第二選擇閥26選擇第二位置,及第一選擇閥24選擇 第位置後,純水供給單元32經由管路22與流體流通孔2〇 連通,在此狀態,純水供給單元32供應一相對高壓之液 體,經由流體流通孔2 0注向研磨頭1 6以快速清洗研磨頭 16° 當第二選擇閥26轉向第一位置,金屬板支架18及純水 供應路徑中的壓力被減低,而剩餘在系統中的純水將被排 出金屬板支架18及純水供應路徑之外。複複數個流體流通 孔20均勻地形成於金屬板支架丨8上,使得欲排出的純水得 以順利地由金屬板支架18上表面排出,儲存於純水儲存槽 的純水最後也以相同的方式排出。在一定的時間後,第二 選擇閥2 6回到初始的位置上。 其次,機械手臂置放下一個晶圓丨2至金屬板支架丨8之 上,第二選擇閥26接著選擇第一位置以連通流體流通孔2〇 及流體排出單元28,金屬板支架丨8吸住晶圓丨2的主表面並 夾持在金屬板支架18之上。 第一選擇閥24選擇第二位置以連通管路22及調節器 38,其中,液體供給單元3〇提供一既定壓力及流速的液態 二氧化碳,由調節器38注入流體流通孔2〇,流體流通孔2〇 供應液態二氧化碳至金屬板支架丨8及晶圓丨2之間以分離金 屬板支架1 8及晶圓1 2。556305 Description of the invention (9) The selection valve 24 and the second selection valve 26 are located at the initial positions, and the pipeline 22 is disconnected from the fluid discharge unit 28, the liquid supply unit 30, or the pure water supply unit 32. After the second selection valve 26 selects the second position and the first selection valve 24 selects the first position, the pure water supply unit 32 communicates with the fluid circulation hole 20 through the pipeline 22. In this state, the pure water supply unit 32 supplies one The relatively high-pressure liquid is injected into the grinding head 16 through the fluid flow hole 20 to quickly clean the grinding head 16 °. When the second selection valve 26 is turned to the first position, the pressure in the metal plate bracket 18 and the pure water supply path is reduced. The pure water remaining in the system will be discharged out of the metal plate bracket 18 and the pure water supply path. A plurality of fluid flow holes 20 are evenly formed on the metal plate support 丨 8, so that the pure water to be discharged can be smoothly discharged from the upper surface of the metal plate support 18, and the pure water stored in the pure water storage tank is finally the same. Way out. After a certain time, the second selector valve 26 returns to the initial position. Next, the robot arm places the next wafer 2 onto the metal plate holder 8 and the second selection valve 26 then selects the first position to communicate the fluid circulation hole 20 and the fluid discharge unit 28, and the metal plate holder 8 sucks The main surface of the wafer 2 is clamped on the metal plate holder 18. The first selection valve 24 selects the second position to communicate the pipeline 22 and the regulator 38, wherein the liquid supply unit 30 provides a liquid carbon dioxide of a predetermined pressure and flow rate, and the regulator 38 is injected into the fluid circulation hole 20, and the fluid circulation hole 20 Supply liquid carbon dioxide between the metal plate holders 8 and the wafers 2 to separate the metal plate holders 18 and the wafers 12.

556305 五、發明說明(ίο) 定位恭1 4測量晶圓1 2的位置並分離金屬板支架1 8及研 磨頭1 6 ’其次,第一選擇閥2 4選擇第一位置以連通流體流 通孔20及流體排出單元28,用以排出金屬板支架18及晶圓 1 2之間的液悲二氧化碳’晶圓1 2因此被金屬板支架1 8吸住 晶圓1 2的主表面,接著定位器1 4釋放晶圓1 2。 之後’金屬板支架1 8往上升,研磨頭丨6的底部具一薄 膜或隔板並往金屬板支架1 8展開,由於金屬板支架丨8往上 升,晶圓1 2與研磨頭1 6上展開的薄膜相接觸,其次,研磨 頭1 6以吸住的方式懸吊晶圓1 2,當研磨頭1 6吸住晶圓1 2, 第一選擇閥24同時位於第二位置,在此,液態二氧化碳經 流體流通孔20注入藉以釋放被金屬板支架丨8吸住的晶圓 1 2 ’因此’晶圓1 2由金屬板支架1 8上被傳送至研磨頭1 6。 其次,研磨頭1 6旋轉研磨晶圓1 2,在晶圓1 2被研磨頭 1 6研磨之後,研磨頭1 6將晶圓1 2送回金屬板支架1 8之上, 當研磨頭1 6的薄膜展開,金屬板支架丨8也同時上升。 第一選擇閥2 6接者選擇第一位置位置以連通流體流通 孔2 0及流體排出單元2 8,金屬板支架1 8吸住晶圓1 2接著往 下降,研磨頭1 6停止展開薄膜並開始收縮薄膜。 當存於調節器3 8中的液態二氧化碳以一既定的壓力及 流速注入流體流通孔2〇時,第一選擇閥24選擇第二位置。 液態二氧化碳由流體流通孔2 〇注入金屬板支架1 8及晶圓j 2 之間,此時晶圓1 2與金屬板支架1 8分開。 其次,定位器1 4開始相對於研磨頭1 6而定位脫離金屬 板支架1 8的晶圓1 2,第一選擇閥2 4選擇第一位置以連通流556305 V. Description of the invention (ίο) Positioning Gong 1 4 Measure the position of wafer 1 2 and separate the metal plate holder 18 and the grinding head 1 6 'Second, the first selection valve 2 4 selects the first position to communicate with the fluid flow hole 20 And a fluid discharge unit 28 for discharging the liquid carbon dioxide from the metal plate holder 18 and the wafer 12 to the wafer 12 and therefore the main surface of the wafer 12 is sucked by the metal plate holder 18 and then the positioner 1 4 release the wafer 1 2. After that, the metal plate holder 18 rises, and the bottom of the grinding head 6 is provided with a film or a separator and is unfolded to the metal plate holder 18. As the metal plate holder 8 rises, the wafer 12 and the grinding head 16 are raised. The unrolled film comes into contact. Secondly, the polishing head 16 suspends the wafer 12 in a sucking manner. When the polishing head 16 sucks the wafer 12, the first selection valve 24 is located at the second position at the same time. Liquid carbon dioxide is injected through the fluid circulation hole 20 to release the wafer 1 2 ′ sucked by the metal plate holder 丨 8, and thus the wafer 12 is transferred from the metal plate holder 18 to the polishing head 16. Next, the grinding head 16 rotates and grinds the wafer 12. After the wafer 12 is ground by the grinding head 16, the grinding head 16 returns the wafer 12 to the metal plate holder 18, and when the grinding head 16 The thin film is unfolded, and the metal plate support 8 is also raised at the same time. The first selection valve 2 6 selects the first position to communicate with the fluid flow hole 20 and the fluid discharge unit 28. The metal plate holder 18 sucks the wafer 1 2 and then descends. The polishing head 16 stops unfolding the film and Began to shrink the film. When the liquid carbon dioxide stored in the regulator 38 is injected into the fluid flow hole 20 at a predetermined pressure and flow rate, the first selection valve 24 selects the second position. Liquid carbon dioxide is injected between the metal plate holder 18 and the wafer j 2 through the fluid circulation hole 20, and the wafer 12 is separated from the metal plate holder 18 at this time. Next, the positioner 14 starts to position the wafer 1 2 away from the metal plate holder 18 relative to the grinding head 16, and the first selection valve 24 selects the first position to communicate with the flow.

2133-5160-PF(N);Cat.ptd 第14頁 556305 及流體排 氧化礙排 面,定位 機械手臂 驟中,第 位置,以 在研磨程 架1 8以純 驟中,純 發明已以 發明,任 圍内,仍 當視後附 五、發明說明(π) 體流通孔2 0 間的液態二 圓1 2的主表 最後’ 線,在此步 位置及第二 3 2 ,晶圓1 2 及金屬板支 圓1 2脫離步 雖然本 用以限定本 之精神和範 之保護範圍 出單元28, 出,晶圓1 2 器1 4則釋放 將晶圓1 2由 一選擇閥24 連通流體流 序之後與研 水分離且免 水可以液態 數個較佳實 何熟習此項 可作些許的 之申請專利 將金屬板 則由金屬 晶圓1 2。 金屬板支 及第二選 通孔2 0及 磨液接觸 於靜電破 一氧化碳 施例揭露 技藝者, 更動與潤 範圍所界 支架1 8及晶圓1 2 板支架1 8吸住晶 架1 8傳送至生產 擇閥26選擇第一 純水供給單元 ,因此,晶圓1 2 壞,然而,在晶 取代。 如上,然其並非 在不脫離本發明 飾,因此本發明 定者為準。2133-5160-PF (N); Cat.ptd p. 14 556305 and the surface of the fluid exhaust oxidation obstacle, positioning the robot arm step, the first position to the grinding process frame 18 to the pure step, the pure invention has been invented, Within the encirclement, you should still attach the fifth, invention description (π) to the liquid crystal circle 1 2 of the main flow meter between the bottom of the main watch's last line, at this step position and the second 32, the wafer 1 2 and Metal plate support circle 12 2 step out Although the original is used to limit the spirit and scope of the protection scope out of the unit 28, the wafer 1 2 and the device 14 are released. After the wafer 12 is connected to the fluid flow sequence by a selection valve 24 It is better to be separated from ground water and free of water. How to familiarize yourself with this patent application? The metal plate is made of metal wafer 12. The metal plate support, the second selection hole 20, and the grinding fluid contact the static electricity to break the carbon monoxide. The example was revealed by the artist, and he changed and extended the range of the bracket 1 8 and the wafer 1 2 The plate holder 1 8 Hold the crystal frame 18 8 The first pure water supply unit is selected up to the production selection valve 26, so that the wafer 1 2 is broken, however, it is replaced in the crystal. As above, however, it does not depart from the present invention, so the present invention will prevail.

556305 圖式簡單說明 第1圖係顯示本發明之防護晶圓靜電破壞之晶圓支架 的示意圖。 第2圖係顯示第1圖中金屬板支架的放大圖,其中晶圓 是用虛線表不。 第3A圖係顯示另一型態的金屬板支架。 第3B圖係顯示第3A圖中喷嘴的放大圖。 符號說明】 1 2〜晶圓 1 6〜研磨頭 2 0〜流體流通孔 2 1〜喷嘴 24〜第一選擇閥 28〜流體排出單元 3 2〜純水供給單元 3 6〜混合裝置 1 0〜晶圓支架 1 4〜定位器 18、19〜金屬板支架 2 0 ’〜流體流通孔 22〜管路 2 6〜第二選擇閥 3 0〜液體供給單元 34〜第三選擇閥 3 8〜調節器556305 Brief Description of Drawings Figure 1 is a schematic diagram showing a wafer holder for protecting the wafer from electrostatic damage according to the present invention. Figure 2 shows an enlarged view of the metal plate holder in Figure 1, where the wafers are shown with dashed lines. Figure 3A shows another type of metal plate support. Figure 3B is an enlarged view of the nozzle in Figure 3A. Explanation of symbols] 1 2 to wafer 16 to polishing head 2 0 to fluid flow hole 2 1 to nozzle 24 to first selection valve 28 to fluid discharge unit 3 2 to pure water supply unit 3 6 to mixing device 1 0 to crystal Round bracket 1 4 to positioner 18, 19 to metal plate bracket 2 0 '~ fluid flow hole 22 to pipeline 2 6 to second selection valve 3 0 to liquid supply unit 34 to third selection valve 3 8 to regulator

2133-5160-PF(N);Cat.ptd 第16頁2133-5160-PF (N); Cat.ptd p. 16

Claims (1)

556305 六、申請專利範圍 1. 一種防護晶圓靜電破壞之晶圓支架,包括: 一金屬板支架,用於放置一晶圓; 至少一流體流通孔,形成於該金屬板支架上; 一流體排出單元,選擇性的與該流體流通孔連通,用 以吸取由該流體流通孔排出之液體;以及 一液體供給單元,選擇性的與該流體流通孔連通,且 經由該流體流通孔供應一液體,該液體的電阻係數低於該 晶圓。 2 ·如申請專利範圍第1項所述之防護晶圓靜電破壞之 晶圓支架,其中該液體供給單元包括一調節器,在該液體 通過該流體流通孔之前控制該液體的壓力及流速。 3 ·如申請專利範圍第1項所述之防護晶圓靜電破壞之 晶圓支架,其中該液體具有0· 5M Ω -cm或更低的導電係 數。 4 ·如申請專利範圍第1項所述之防護晶圓靜電破壞之 晶圓支架,其中該液體是因二氧化碳溶解於水而形成。 5·如申請專利範圍第1項所述之防護晶圓靜電破壞之 晶圓支架,其中該液體包括氨及水。 6 ·如申請專利範圍第1項所述之防護晶圓靜電破壞之 晶圓支架,其中該至少一流體流通孔包括複複數個流體流 通孑L。 7 ·如申請專利範圍第1項所述之防護晶圓靜電破壞之 晶圓支架,其中該流體流通孔在出口處的截面積大於在該 金屬板支架上的截面積。556305 6. Scope of patent application 1. A wafer holder for protecting the wafer from electrostatic damage, comprising: a metal plate holder for placing a wafer; at least one fluid circulation hole formed on the metal plate holder; a fluid discharge A unit selectively communicating with the fluid circulation hole for sucking liquid discharged from the fluid circulation hole; and a liquid supply unit selectively communicating with the fluid circulation hole and supplying a liquid through the fluid circulation hole, The resistivity of the liquid is lower than that of the wafer. 2. The wafer holder for protecting the wafer from electrostatic damage according to item 1 of the scope of the patent application, wherein the liquid supply unit includes a regulator to control the pressure and flow rate of the liquid before the liquid passes through the fluid flow hole. 3. The wafer holder for protecting the wafer from electrostatic damage as described in item 1 of the scope of the patent application, wherein the liquid has a conductivity coefficient of 0.5 M Ω -cm or less. 4 · The wafer holder for protecting the wafer from electrostatic damage as described in item 1 of the scope of the patent application, wherein the liquid is formed by dissolving carbon dioxide in water. 5. The wafer holder for protecting the wafer from electrostatic damage as described in item 1 of the scope of the patent application, wherein the liquid includes ammonia and water. 6. The wafer holder for protecting the wafer from electrostatic damage according to item 1 of the scope of the patent application, wherein the at least one fluid circulation hole includes a plurality of fluid passages L. 7. The wafer holder for protecting the wafer from electrostatic damage as described in item 1 of the scope of the patent application, wherein the cross-sectional area of the fluid flow hole at the outlet is larger than the cross-sectional area of the metal plate holder. 2133-5160-PF(N);Cat.ptd 第17頁 556305 a '申請糊細 ' . 曰8·如申請專利範圍第丨項所述之防護晶圓靜電破壞 =圓支架,其中該金屬板支架包括複數個喷嘴,該等 均具有複複數個流體流通孔。 、鳥 曰。9·如申請專利範圍第丨項所述之防護晶圓靜電破壞 ^圓支架,其更包括一水供應單元,用以供應純水,气 體及該純水以可選擇的方式經由該流體流通孔提供。/成 1 〇. —種利用具有流體流通孔的金屬支架處理晶圓 方法,包括下列步驟: 、 當該晶圓與該金屬板支架之間的空氣經由該流體流1 孔被抽出時,該晶圓被該金屬板支架吸住;以及 k 當供應一液體,其電阻係數低於水的電阻係數時,兮 晶圓由該金屬板支架脫離。 1 1.如申請專利範圍第1 0項所述之利用具有流體流通 孔的金屬支架處理晶圓的方法,其中該液體具有0. Ώ —cm或更低的導電係數。 1 2.如申請專利範圍第1 〇項所述之利用具有流體流通 孔的金屬支架處理晶圓的方法,其更包括一步驟,係為經 由該流體流通孔供應純水。 ''' 1 3 · —種化學機械研磨晶圓的方法’利用研磨頭及與 其相連且具有流體流通孔之金屬板支架’包括下列步驟· 當該晶圓與該金屬板支架之間的空氣經由該流體流通 孔被抽出時,該晶圓被該金屬板支架吸住; 當供應一液體,其電阻係數低於水的電阻係數時,該 晶圓由該金屬板支架脫離;以及2133-5160-PF (N); Cat.ptd p. 17 556305 a 'Application for pastes'. Said 8 · Protection against electrostatic damage to wafers as described in item 丨 of patent application scope = Round bracket, where the metal plate bracket Including a plurality of nozzles, each of which has a plurality of fluid flow holes. , The bird said. 9. The round wafer bracket for protecting wafers from electrostatic damage as described in item 丨 of the scope of patent application, which further includes a water supply unit for supplying pure water, gas and the pure water through the fluid in an optional manner. Hole provided. / 成 1 〇. A method for processing a wafer using a metal holder with a fluid flow hole, including the following steps: When the air between the wafer and the metal plate holder is withdrawn through the fluid flow 1 hole, the crystal The circle is sucked by the metal plate holder; and k, when a liquid is supplied, the resistivity of which is lower than that of water, the wafer is detached from the metal plate holder. 1 1. The method for processing a wafer by using a metal holder having a fluid flow hole as described in item 10 of the scope of the patent application, wherein the liquid has a conductivity of 0.1 μm or less. 1 2. The method for processing a wafer using a metal holder having a fluid flow hole as described in item 10 of the scope of the patent application, further comprising a step of supplying pure water through the fluid flow hole. '' '1 3 ·-A method for chemical mechanical polishing of wafers' Using a polishing head and a metal plate holder connected to it and having a fluid flow hole' includes the following steps: When the air between the wafer and the metal plate holder passes When the fluid flow hole is withdrawn, the wafer is sucked by the metal plate support; when a liquid is supplied, and its resistivity is lower than that of water, the wafer is detached from the metal plate support; and 556305 六、申請專利範圍 經由該流體流通孔提供純水用以清洗該研磨頭。 2133-5160-PF(N);Cat.ptd 第19頁556305 6. Scope of patent application Pure water is provided through the fluid circulation hole to clean the grinding head. 2133-5160-PF (N); Cat.ptd p. 19
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US20030045218A1 (en) 2003-03-06

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