TW554473B - Integrated processing system for forming an insulating layer of thin film transistor liquid crystal display - Google Patents

Abstract

A processing station for forming an insulating film comprises a chemical vapor deposition (CVD) unit, a cleaning unit, a cassette station that receives a plurality of substrates, and a transfer system. The transfer system effectuates the conveyance of a substrate being processed between the CVD unit, the cleaning unit, and the cassette station. The CVD unit is placed in a position facing the cassette station, the transfer system is disposed between the CVD unit and the cassette station, and the cleaning unit is positioned proximate to the transfer system. Within the processing station, a substrate is subjected to an operating cycle that includes a plurality of deposition passes alternated with at least a wet cleaning operation. Each deposition pass forms a thickness of insulating layer smaller than the desired thickness of insulating film. Each wet cleaning operation removes residual particles from an intermediary insulating layer.

Description

554473 V. Description of the invention (1) The present invention relates to a device for a semiconductor process, and in particular, to an insulating film for manufacturing a thin film transistor (TFT) liquid crystal display (LCD)丨 1 ^ 111 & 1: 丨 1 ^ 1111). In recent years, thin film transistors have been used in a variety of semiconductor devices, especially liquid crystal displays. Because of its low-voltage operation, non-radiation scattering, light weight, and small size, liquid crystal displays have become one of the most important displays under the rapid growth of mobile information equipment. Therefore, the process improvement of thin film transistor liquid crystal displays has become one of the focuses of development in various circles. The method for forming the insulating film of thin film transistor liquid crystal displays is to use plasma chemical vapor deposition (p 1 asma enhanced chemical vapor method). deposition (PECVD for short) deposits an insulating film with a predetermined thickness on a substrate. However, the formed insulating film often has the problem of residual particles (part i cl e), which in turn causes short circuits between different layers or component failure (f a i 1), resulting in a decrease in yield. Even if the substrate is subjected to a cleaning step after deposition, particles may still remain in the insulating film, and in order to remove the particles more thoroughly, pin holes may be generated in the insulating film, or for automatic An auto guide vehicle (AGV for short) or a manual guide vehicle (MGV for short) moves the substrate between the devices to make it polluted by the environment. Therefore, an object of the present invention is to provide a combined device for manufacturing an insulating film of a thin-film transistor liquid crystal display to reduce residual particles in the insulating film.

9457twf.ptd Page 5 554473 V. Description of the Invention (2)-The invention of the moment! Another object is to provide a combined device for manufacturing an insulating film of a thin-film transistor liquid crystal display device, so as to prevent the occurrence of short-circuits between different layers which is a component failure. / One. Another object of the present invention is to provide a combined device for manufacturing an insulating film of a thin film transistor liquid crystal display, so as to improve the yield of the process. Another object of the present invention is to provide a combined device for manufacturing an insulating film of a thin film transistor liquid crystal display device, which can shorten the substrate time before and after cleaning. Another object of the present invention is to provide a combined device for manufacturing an insulating film of a thin-film transistor liquid crystal display to reduce the chance of the substrate being polluted by the environment. According to the above and other objectives, the present invention proposes a combined device for manufacturing an insulating film of a thin film transistor liquid crystal display (TFT-LCD), which is composed of a chemical vapor deposition device, a cleaning chamber (c 1 e aner), and a wafer boat. The station (cassette station) and a transfer system for transferring substrates to the above components are combined. The configuration is a chemical vapor deposition device. Compared to the boat station, the transfer system is located in the boat station and the chemical vapor station. Between the deposition devices, and the cleaning chamber is adjacent to the transfer system. The present invention further provides a method for manufacturing an insulating film of a thin-film transistor liquid crystal display, which includes moving a substrate from a wafer boat station into a chemical vapor deposition device opposite to the wafer boat station, wherein the substrate for transferring the substrate is located at the wafer boat station. A transfer system to a chemical vapor deposition unit. Subsequently, a first deposition is performed using a chemical vapor deposition apparatus, whereby an insulating film having a thickness of about half of a predetermined thickness is deposited on the substrate. Then, the substrate is transferred from the substrate using a transfer system.

9457twf.ptd Page 6 554473 V. Description of the invention (3)-The chemical / vapor deposition device is removed and sent to a cleaning chamber adjacent to the transfer system for wet cleaning to remove microf in the insulation film. Afterwards, the cleaned substrate is transferred into the chemical and phase f product device by a transfer system to perform a second deposition so as to make up a predetermined thickness of the insulating film. Then, the cleaning and deposition processes are repeated as required to obtain the best insulating film. Finally, the substrates that have completed the deposition process can be transferred to the wafer boat station by the transfer system for subsequent processes. a The present invention divides the insulating layer to be deposited into multiple depositions. Therefore, the wet cleaning performed after the first person / child product can remove particles in or on the insulating film deposited for the first time. Therefore, the combined device of the present invention can reduce the residual particles in the insulating film. In addition, the pinholes generated in the insulating layer after cleaning in the present invention can also be filled after the next deposition, so it can prevent the occurrence of short circuits between different layers or the failure of components, thereby improving the yield of the process. In addition, since the combined device of the present invention integrates a chemical vapor deposition device and a cleaning chamber ', that is, uses the same wafer boat station interface, the substrate transfer time before and after cleaning can be shortened, and the opportunity for the conventional substrate to be polluted by the environment can be reduced. * In order to make the above and other objects, features, and advantages of the present invention more obvious and simple, a preferred embodiment is given below, and in conjunction with the accompanying drawings, the description is as follows:, A brief description of the mark: 1 〇0: Combined equipment 1 0 2 · Jingzhou Station 104: Jingzhou

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Page 7 554473 V. Description of the invention (4) 106 Chemical vapor deposition device 108 Cleaning chamber 110 Transfer system 112 Substrate 114 Robotic arm embodiment The present invention is a thin film transistor (TFT) liquid crystal display (liqui) (1 Crystal display 'Instrument film of LCD' combined device 'is mainly a combination of chemical vapor deposition (CVD) device and cleaner cavity in the same combined device. FIG. 1 is a schematic diagram of a combined device for manufacturing an insulating film of a thin-film transistor liquid crystal display according to a preferred embodiment of the present invention. Please refer to FIG. 1 for a combined device for manufacturing an insulating film of a thin-film transistor liquid crystal display. The chemical vapor deposition device 106, a cleaning chamber 108, a cassette station 102, and a transfer system H0 for transferring the substrate 112 to the above components are combined. The phase deposition device 106 mainly includes a chemical vapor deposition chamber (CVD chamber). Cavity, temperature control system, gas pipeline system, pressure control system, radio frequency (RF) generator of plasma enhanced CVD (PECVD); and cleaning room 1 〇8 includes a cleaning device (cleaning equipment) such as a scrubber (scrubber);

9457twf.ptd Page 8 554473 V. Description of the invention (5) The transfer system 1 10 includes, for example, a robot 11 for transferring the substrate 1 12; and the wafer boat station 102 includes a plurality of wafer boats 104. The arrangement of the components of the present invention is cleaned by the chemical vapor deposition device 106 compared to the crystal boat ^ 104, and the transfer system is located between the crystal boat station 104 and the chemical vapor deposition device 106. Room 108 is adjacent to the transfer system 110. § The above-mentioned combination of the present invention is not applied to the deposition process of the insulation film. 'The substrate (not shown) placed in the wafer boat 104 was first moved from the wafer boat station 〇 02 to the wafer boat station 102 In the chemical vapor deposition apparatus 106, a transfer system 110 located between the wafer boat station 102 and the chemical vapor deposition apparatus is used to transfer the substrate 112. Then, the chemical vapor deposition device 106 is used for the first deposition to deposit an insulating film of about half a predetermined thickness on the substrate, or to be thicker or thinner. The deposition process is described in terms of plasma chemical vapor phase and / or CVD (p 1 as in aenhanced CVD, PECVD for short). 9

Then, the transfer system 110 is used to remove the substrate from the chemical vapor deposition device 106, and then sent to a cleaning chamber 108 adjacent to the transfer system 110 for wet cleaning to remove the insulating film or the substrate. Residual particles (parti cl e), wherein wet cleaning is, for example, physical cleaning, such as water column washing or brushing. After the particles are removed, pinholes (p 1 n ho 1 e) are generated in the insulating layer. Therefore, the cleaned substrate is then transferred into the chemical vapor deposition device by the transfer system j 丨 〇6 for The second deposition is to fill the pinholes generated by the first deposition and to make up the insulating film with a predetermined thickness. Because the particle position of the insulation film is almost doubled,

9457twf.ptd Page 9 554473 V. Description of the invention (6) It is impossible to fall in the same position, so even if there are particles, another deposited insulating film will make up the absolute position of that position == improve the yield. Finally, the substrate that has completed the deposition process can be transferred to the Jingzhou Station 102 for subsequent processes. In summary, the features of the present invention include: · 々1 · The present invention divides the insulation layer to be deposited into two deposits. Because the wet cleaning performed after the first deposition can Removal of particles in or on the secondary insulation film can reduce residuals, particles in the insulation film, prevent the occurrence of short-circuits between different layers or component failure: At least the pinholes produced on the insulating layer of the present invention after cleaning can be filled after the second accumulation. Since the particles of the insulating film deposited twice are almost impossible and fall in the same position, even if there are particles, The strength of the insulating film at this location can be compensated by another deposited insulating film due to the yield improvement. From —3 · The combined equipment of the present invention can shorten the transfer time of the cleaning plate because the integrated chemical vapor deposition device and cleaning are used, that is, the same wafer boat station interface is used. As the combined equipment of the present invention uses the same crystal boat station interface, it can be reduced. It is known that it can be automatically guided vehicle (AGV) or manuai vehicle (MGV). Opportunity to move substrates between devices and make them polluted by the environment. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some changes and decorations without departing from the spirit and fc of the present invention. Therefore the guarantee of this invention

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Claims (1)

554473 6. Scope of patent application 1. A combined device for manufacturing an insulating film of a thin-film transistor liquid crystal display, suitable for depositing an insulating film on a substrate, including: a wafer boat station, a chemical vapor deposition device, opposite to the crystal Boat station; a transfer system is located between the wafer boat station and the chemical vapor deposition device for transferring the substrate; and a cleaning chamber is adjacent to the transfer system. 2. The combined device for manufacturing an insulating film of a thin film transistor liquid crystal display as described in item 1 of the scope of the patent application, wherein the chemical vapor deposition device includes a cavity for performing a plasma chemical vapor deposition method. 3. The combined device for manufacturing an insulating film of a thin film transistor liquid crystal display as described in item 1 of the scope of patent application, wherein the cleaning chamber includes a cleaning device. 4. The combined device for manufacturing an insulating film of a thin film transistor liquid crystal display as described in item 3 of the scope of patent application, wherein the cleaning device includes a brush cleaning machine. 5. The combined device for manufacturing an insulating film of a thin film transistor liquid crystal display as described in item 1 of the scope of patent application, wherein the transfer system includes a robot arm. 6. The combined device for manufacturing an insulating film of a thin-film transistor liquid crystal display as described in item 1 of the scope of patent application, wherein the wafer boat station has a plurality of wafer boats' for carrying the substrate. 7. A method for manufacturing an insulating film of a thin-film transistor liquid crystal display; suitable for depositing an insulating layer of a first thickness using a combined device, the 9457twf.ptd Page 13 554473 6. The combined equipment for patent application scope includes a wafer boat station; a chemical vapor phase, redundant device relative to the wafer boat station; a transfer system located between the wafer boat station and the chemical vapor deposition device; and A cleaning chamber adjacent to the transfer system includes the steps of: providing a substrate which is placed in the wafer boat station; using the transfer system to move the substrate from the wafer boat station into the chemical vapor deposition device, '' Perform a first deposition process to deposit a second thickness of the insulating layer on the substrate, wherein the second thickness is less than the first thickness; & using the transfer system to remove the substrate from the chemical vapor deposition device Ming in the cleaning chamber; Xin performs a cleaning process to remove residual particles on the substrate; uses the transfer system to move the substrate from the cleaning chamber into the chemical vapor deposition device; and performs a second deposition process to A third thickness of the insulating layer is deposited on the substrate, where the third thickness plus the thickness of the insulating layer after the cleaning process is equal to the first thickness. 8. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as described in item 7 of the scope of patent application, wherein the step of performing the first deposition process includes a plasma chemical vapor deposition method. 9. The method for manufacturing an insulating film of a thin film transistor liquid crystal display according to item 7 of the scope of the patent application, wherein the step of performing the second deposition process includes a plasma chemical vapor deposition method. 1 0 · The method for manufacturing an insulating film of a thin-film transistor liquid crystal display device as described in item γ of the patent application, wherein the second thickness is about the first thickness 554473 6. Half of the scope of patent application. 11. The method for manufacturing an insulating film of a thin-film transistor liquid crystal display according to item 7 of the scope of application for a patent, wherein the step of performing the cleaning process includes' wet cleaning. -1 2. The method for manufacturing an insulating film of a thin film transistor liquid crystal display according to item 11 of the scope of patent application, wherein the wet cleaning includes water column washing. 1 3. The method for manufacturing an insulating film of a thin film transistor liquid crystal display according to item 11 of the scope of application for a patent, wherein the wet cleaning includes brushing. 1 4. A method for manufacturing an insulating film of a thin-film transistor liquid crystal display, which is suitable for depositing an insulating layer of a fixed thickness using a combination device. The stomach combination device includes a wafer boat station, which is opposite to the wafer boat station. ^ A chemical vapor deposition device; a transfer system between the wafer boat station and the chemical vapor deposition device; and a cleaning chamber adjacent to the transfer system, the steps include:-a. Providing a substrate, the substrate Is placed in the wafer boat station; b. The substrate is moved into the chemical vapor deposition device using the transfer system; c. A deposition process is performed to deposit the insulating layer on the substrate, wherein the insulating layer is The thickness is less than the fixed thickness; d. Using the transfer system to move the substrate from the chemical vapor deposition device into the cleaning chamber; e. Performing a cleaning process to remove residual particles on the substrate; and f. Repeating Steps b to e until the total thickness of the insulating layer is equal to the fixing 9457twf.ptd Page 15 554473 6. Scope of patent application Thickness. 15. The method for manufacturing an insulating film of a thin-film transistor liquid crystal display according to item 14 of the scope of the patent application, wherein the step of performing the deposition process includes a plasma chemical vapor deposition method. 16. The method for manufacturing an insulating film of a thin-film transistor liquid crystal display according to item 14 of the scope of the patent application, wherein the step of performing the cleaning process includes performing a wet cleaning. Xin 1 7. The method for manufacturing an insulating film of a thin-film transistor liquid crystal display according to item 14 of the scope of patent application, wherein the wet cleaning includes water column washing. 1 8. The method for manufacturing an insulating film of a thin-film transistor liquid crystal display according to item 14 of the scope of patent application, wherein the wet cleaning includes brushing. 9457twf.ptd Page 16