TW554470B - Method of forming a conductive structure in a low k material layer and equipment for forming the low k material layer - Google Patents

Abstract

A method of forming a conductive structure in a low k material layer is described. A first dielectric layer, a low k material layer and a second dielectric layer are formed on a substrate sequentially, wherein the first dielectric layer, the low k material layer and the second dielectric layer are formed in-situ. Then, a photolithography process and an etching process are performed to form an opening in the second dielectric layer, the low k material layer and the first dielectric layer exposing the substrate. A conductive layer is filled into the opening to form a conductive structure.

Description

554470 V. Description of the invention (l) The present invention relates to a method and a device for forming a semiconductor element, and more particularly to a method for forming a conductive structure in a low-dielectric material layer and a device for forming a low-dielectric material layer .

In the semiconductor manufacturing process, dielectric materials are often used as insulators to isolate conductive structures between conductive structures. The conductive structure is, for example, an interconnect, a gate, or a plug. As the line width of semiconductor devices continues to shrink, the spacing between adjacent structures also decreases. Therefore, the use of a dielectric material with a low dielectric constant as the material of the dielectric layer can reduce parasitic capacitance and reduce "delay." Generally, the commonly used low dielectric material layer includes hydrogen silicate (Hydrogen). Silsesquioxane (HSQ), methyl-containing silicates (Methyi

(Silsequioxane, MSQ) and organic dielectric materials such as Parylene and the like. It is customary to deposit a dielectric layer on the bottom of the dielectric layer to form an opening in the dielectric layer to complete the conductive junction material. For example, as a dielectric layer, it is deposited on a silicon-based low dielectric constant (Adhesion) substrate and organic force. The construction of the structure is the material of the second. The bottom line is not good enough. After the dielectric material, 'after. However, it is a method of forming conductive structures between electrical materials in the conventional way, and then using a lithographic etching to fill the openings with one. At present, the low dielectric constant (Parylene) will reduce the dielectric constant. When there is an electrical layer, there is an adhesion method with the silicon substrate. There has been research into an adhesive layer to improve the system in the shattering process. The organic dielectric printed with the name conductive material is often used as the dielectric material. The problem is that the focus is on the adhesion of the two

554470 V. Description of the invention (2) However, because of the conventional method of depositing organic dielectric materials with low dielectric constants, most of them use a low pressure chemical vapor deposition (LpCVD) method or an atmospheric pressure chemical vapor deposition method (APCVD). ). In the LPCVD machine or the APCVD machine, the in-situ deposition process of the organic dielectric layer and the inorganic dielectric layer cannot be performed. Therefore, in order to form this adhesive layer in the conventional method, the process is complicated. The purpose of Zhongkai = Leiyiyi is to provide a method for forming a low-dielectric material layer :: two-conductivity: structure and a device for forming a low-dielectric material layer, in order to change the organic dielectric material with a low dielectric constant and The problem of poor adhesion between Shi Xi substrates. Another object of the present invention is to introduce the conductive surnames mϋπ Λ, ^ ί for seeding in a low-dielectric material layer to form a conductive, sigma, and sigma structure, and a method for forming a low-dielectric material, which has the disadvantage of a complicated process. Improvement of the material shake layer The present invention proposes a method for forming low-dielectric materials and forming a dielectric medium: fef ^ forming a conductive structure and forming a low layer; 丨 a device for forming a material layer, this method forms a first A dielectric layer. Next, a material layer is first formed on a substrate, and a low-dielectric first dielectric layer, a low-dielectric material layer, and a two-dielectric layer are formed on the low-dielectric material layer 2. (In-Situ). In the present invention, the layers are made of an in situ and a second dielectric layer, respectively, and the thickness of the first dielectric layer in an inorganic H is greater than that of the first dielectric layer. The second dielectric layer is used as an adhesive layer, and the second ^ ^, the first dielectric layer is used, and the material of the low dielectric material layer is used as a cover. Including low dielectric materials of organic materials. In addition, this ^ 4 miscellaneous one inorganic material 9487twf.ptd $ 6 pages is 4470 V. Description of the invention (3) An adhesive force between Lei Ju θ. In the present invention, the first and second low-electricity material layers and the second dielectric element are integrated. The equipment has the following advantages: the plasma gain type chemical vapor deposition pipe fittings are used to enter the human inorganic reaction. Gas and another organic reaction gas, so that the layer can be deposited in situ, and the inorganic layer is doped with inorganic materials. In the shape of: to deposit organic materials and The second dielectric sheet j 2 is a first dielectric material, a low-dielectric material layer, so as to form a photoresist layer on the second dielectric layer with the photoresist layer iii, and ^ φ a ^ ^ The first etching process is used to pattern the second "electrical layer" to form a first opening. 2 The first layer is a mask tweezers / first resist layer and the second dielectric layer m: a second etching process. Patterned low-dielectric material openings. Continued ... The second dielectric layer is a mask-entry opening: = patterned the first dielectric layer to form a -third # to the road substrate. After that, it is opened in the third A conductive layer is filled in to form a conductive structure. Ν In addition to the present invention, a low-dielectric material layer (organic material) and a substrate are used in the present invention. The shape ^ has an electrical layer (inorganic material), so the adhesion between the two can be improved. Because of the low-dielectric material layer of the organic material and the inorganic material of the present invention, the dielectric layer / second dielectric layer can be The in-situ deposition method is formed, so it is more simplified than the conventional methods. Pingdanlong makes the above and other objects, features, and advantages of the present invention clearer. Drawings, detailed

554470 V. Explanation of the invention (4) The detailed description is as follows: 102, 104: reaction chamber 106: carrier gas I 0 8: raw material II 0: inorganic reaction gas 11 2: cooling well 114, 120: pump 11 6: Coil 11 8Electrode 126: Wafer 128: Magnetic field supply 1 3 0: Cooler 132, 134: RF power supply 1 4 2, 1 4 4: Network matcher 136: Heater 200: Base 202 : First dielectric layer 204: Low dielectric material layer 206: Second dielectric layer 208: Photoresist layers 210, 212 > 214: Opening 216: Conductive layer embodiment

9487twf.ptd Page 8 554470 V. Description of the invention (5) Not shown in Figure 1, which is a schematic diagram of a device for forming a low-dielectric material layer according to a preferred embodiment of the present invention; Figures 28 to 2E As shown in the figure, it is not a schematic sectional view of a process for forming a conductive structure in a low-dielectric material layer according to a preferred embodiment of the present invention. Please refer to FIG. 2A firstly, a first dielectric layer 202 is formed on a substrate 200. The first dielectric layer 202 is an inorganic material layer, which is used to improve the substrate 200 and Adhesion between subsequent organic material layers: In this embodiment, the material of the first dielectric layer 20 is, for example, silicon oxide or silicon nitride, and the thickness is, for example, 500 angstroms to 15 angstroms. 〇Angels. Next, a low-dielectric material layer 204 is formed on the first dielectric layer 202. The low-dielectric material layer 204 is an organic material layer, and the low-dielectric material layer 204 of an organic material further includes an inorganic material doped therein. Materials to improve the adhesion between the low-dielectric material layer 204 of the organic material and the first dielectric layer 202, and to improve the low-dielectric material layer 204 of the organic material and subsequently form the low-dielectric material layer Adhesion between one inorganic material layer on 204. In this example, the material of the low-dielectric material layer 204 is, for example, a high-molecular polymer with a low dielectric constant, and the thickness thereof is, for example, 6,000 angstroms to 4,000 angstroms. Afterwards, a second dielectric layer 206 is formed on the low dielectric material layer 204. The second dielectric layer 206 is an inorganic material layer, and the second dielectric layer 206 is thicker than the first dielectric layer. The thickness of 202 is thick, and the subsequent performance is used as an f curtain layer. In this embodiment, the material of the second dielectric layer 206 is, for example, ytterbium silicon or silicon nitride, and the thickness thereof is, for example, 2500 angstroms to 3500 angstroms. ★ In the present invention, the first dielectric layer 202, the low-dielectric material layer 204, and the second dielectric layer 206 are formed by an in-situ deposition method, and they are formed.

Page 9 554470 5. Description of the invention (6) The method is, for example, a plasma gain chemical vapor deposition (PECVD) method, and the plasma gain chemical vapor deposition equipment is shown in FIG. Referring to Fig. 1, a raw material 108 for forming the low-dielectric material layer 204 is placed in the reaction chamber 102. In this embodiment, the raw material 108 is, for example, di-para-xylylene or bis-benzocyclobuten (BCB) and other organic materials with a low dielectric constant. In this embodiment, the low-dielectric material layer 204 formed of bis-para-xylene will be taken as an example for detailed description, but it is not intended to limit the present invention. Next, after the di-para-xylene 108 is heated (about 150 degrees Celsius) and volatilized to a gaseous state, the gas of the di-para-xylene can be transferred to the reaction chamber 104 through the carrier gas 106. The temperature of the reaction chamber 104 is about 650 degrees Celsius. When the gas of bis-para-xylene is at a temperature of 650 degrees Celsius, it will be decomposed into a monomer (Monomer) form from the dimer to form p-diphenylbenzene ( para-xy ly lene). Thereafter, the para-xylene monomer can be passed into the plasma reaction chamber 100 through an input pipe to perform a deposition reaction. In this equipment, a number of valves are installed on the fittings connecting the reaction chambers to control the flow of gas. In addition, another pipe is connected to the pipe between the reaction chamber 104 and the plasma reaction chamber 100. This pipe is used to guide the waste gas to the cooling well 112, and the cooling well 112 is connected. There is a series 114 'for pumping exhaust gas into the cooling well 112. As the para-xylene gas drops to a polymer solid state once it drops below room temperature, a heater 1 3 6 must be used in each reaction chamber and pipeline to maintain the temperature at a certain level. Temperature to avoid paraxylene

9487twt'.ptd Page 10 554470 V. Description of the invention (7) The polymer (parylene) is attached to the pipe wall. At the same time, when the para-xylene exhaust gas is to be discharged, it can be pumped to the cooling well 11 2 by the pump 114 and the discarded solid parylene polymer can be collected. This equipment further includes an inorganic reaction gas reaction chamber 110, and the inorganic reaction gas in the reaction chamber 110 can be passed into the plasma reaction chamber 100 through another input pipe. In this embodiment, the inorganic reaction gas system includes SiH4, N2, 02, NH3, and Ar. The device further includes a coil 116, a radio frequency power supply 1 2 connected to the coil 116, and a network matcher 142 disposed between the coil 116 and the radio frequency power supply 132. In addition, it also includes an electrode 118, a radio frequency power supply 134 connected to the electrode 118, and a network matcher 144 disposed between the electrode 118 and the radio frequency power supply 134. With the above-mentioned device, a plasma can be generated in the plasma reaction chamber 100, so that the reaction gas passed through can be subjected to a plasma gain type chemical vapor deposition reaction, and deposited on the wafer 1 2 6 as a thin film. . In addition, a magnetic field supplier 128 is arranged on both sides of the plasma reaction chamber 100 to provide a magnetic field 100 in the plasma reaction chamber, thereby increasing the frequency of the collision of charged particles 4 miles. A cooler 130 is further included below the wafer 100 to control the temperature of the wafer 126, thereby controlling the speed of the deposition reaction on the wafer 126. A series of 120 'is arranged below the entire plasma reactor 100 to keep the pressure in the plasma reaction chamber 100 at a low pressure environment. Therefore, the deposition apparatus of the present invention is used to form the first dielectric layer 202, the low-dielectric material layer 204, and the second dielectric layer 206 (as shown in FIG. 2a).

9487twf.ptd Page 11 554470

V. Description of the invention (shown in (8)), the inorganic reaction gas in the reaction chamber 11 is first passed into the plasma reaction chamber 100 through an input pipe to form a first dielectric layer 202 on the wafer 126 . After that, another low-dielectric constant organic raw material gas in the reaction chamber 104 is passed into the plasma reaction chamber 100 through another input pipe to form a low-dielectric material on the first dielectric layer 202. Layer 204. When the low-dielectric material layer 204 is formed, an inorganic material can be passed through the reaction chamber 110, and the low-dielectric material layer 204 is doped with an inorganic material. Continuing, the inorganic reaction gas in the reaction chamber 11 is passed into the plasma reaction chamber 10 (), and a second dielectric layer 206 is formed on the material layer m. Because of the low dielectric material, the device of the present invention is used to form the first dielectric layer 202, the low op layer 204, and the second dielectric layer 206 by in-situ deposition. The dielectric material layer 204 may further be doped with an inorganic material. A dielectric layer 202 is formed on the second dielectric layer to form an opening M. Then, referring to FIG. 2a, it is formed on the second dielectric layer 204 and the second dielectric layer 206 after the formation of 206. Patterning one photoresist layer 208, exposing

Then, please refer to Section 2B. ^ &Quot;, / u 叫 价 u 8 Feng Yizhao usher in defense of the first surname engraving process to pattern the second mediator opening 210. Level_, 丨 the electrical layer 206 'to form a first

After that, please refer to FIG. 2C, and continue to perform a second patterning with the photoresist mask as the mask: the masking layer = material layer 204 to form a second opening 212. Patterned low-dielectric material layer 204 is the same as the photoresist layer 208;

~ ’Machine material, so in P

9487twf.ptd Page 12 554470 V. Description of the invention (9) When the dielectric material layer 204 is used, the photoresist layer 208 may not be completely etched with silver. However, since the first dielectric layer 206 formed on the first dielectric layer of the low-dielectric reactance ## 力 力 乂 mm " material layer 204 " is an inorganic material layer, the process of the second process After being removed, V can be formed on the p-layer, so that the second opening 212 can be formed smoothly. The line-pattern 'uses the second dielectric layer 206 as a mask to perform a second etching process to pattern the first dielectric layer 20P, &# + @ 三 saying 214, and exposes Gan ^ · 2, and Form the core of the 206th: Among them, because the thickness of the second dielectric layer: the Λΐ layer 002 is thick, although the -dielectric layer 206 is also an inorganic material layer, but because of the -dielectric reactance Etching = force so that the third opening 214 can be formed smoothly. shore? [F], “Please refer to FIG. 22, and fill a conductive formation in the third opening 214: conductive structure. Wherein, the third opening 214 is filled with the guide 未 m. The method is to deposit a layer of conductive material or a layer of conductive material on the base m, or fill the third opening 214, and then use a surname. The engraving process ^ electrical layer ^ machine blasting process to remove excess conductive material layers, until the "first dielectric layer 202, low dielectric material layer 204, and $ 2" layer 206 in the second-invention are all As the dielectric layer for insulation, it is used as the first dielectric layer 202 and the second dielectric layer 206 as the cover layer 206. A and A dielectric materials will not affect the dielectric layer. Insulation effect. In addition, the first dielectric layer 202 is formed between the low-dielectric material layer 204 of the present invention and the substrate 200, so the substrate 20 and the low-dielectricity can be improved.

7twf.ptcj Page 13 554470 V. Description of the invention (10) Adhesion between material layers 204. Moreover, the present invention is doped with an inorganic material in the low-dielectric material layer 204, so that the adhesion between the low-dielectric material layer 204 and the first dielectric layer 202 / the second dielectric layer 206 can be achieved. Better. In addition, using the present invention, the deposition equipment can be used to form the first dielectric layer 20 2, the low-dielectric material layer 204, and the second dielectric layer 206, which can be formed by in-situ deposition, thereby improving the conventional method. The disadvantages of the middle process are more complicated. To sum up, the present invention has the following advantages: 1. Since the present invention forms a dielectric layer (inorganic material) between the low dielectric material layer (organic material) and the substrate, the two forces can be improved. Since the organic material layer and the inorganic material layer of the present invention can be formed by in-situ deposition, it is more simplified than the conventional method. The invention has been disclosed in the preferred embodiment as above, but it is not intended to limit the invention. Anyone who is familiar with this skill can, within the scope of discord, make some changes and retouching: =: = Fan Yuan Baokouman, as defined by the attached patent scope

9487twf.ptd Page 554470 Brief Description of Drawings Figure 1 is a schematic diagram of a device for forming a low dielectric material layer according to a preferred embodiment of the present invention; and Figures 2A to 2E are preferred according to the present invention. The embodiment is not intended to be a flow cross-section of a conductive structure formed in a low-dielectric material layer.

9487twf.ptd Page 15

Claims (1)

554470 A method for forming a conductive structure in a low-dielectric material layer, including forming a first dielectric layer on a substrate; forming a low-dielectric material layer on the first dielectric layer; a person on the low-dielectric material layer A second dielectric layer is formed thereon, wherein the first dielectric layer, the low dielectric material layer, and the second dielectric layer are formed by an in-situ deposition process; and a lithographic etching is performed. A process for forming an opening in the second dielectric layer, the low dielectric material layer, and the first dielectric layer to expose the substrate; and filling a conductive layer in the opening to form a conductive structure . 2. The method for forming a conductive structure in a low-dielectric material layer as described in item 1 of the scope of patent application, wherein the device system for forming the first dielectric layer, the low-dielectric material layer, and the second dielectric layer is Formed by a plasma gain type chemical vapor deposition machine, the operation steps of the machine include: passing a first inorganic reaction gas into a plasma reaction chamber to form the first dielectric layer; A reaction gas is passed into the plasma reaction chamber to form the low-dielectric material layer; and a second inorganic reaction gas is passed into the plasma reaction chamber to form the second dielectric layer. 3. The method of forming a conductive structure in a low-dielectric material layer as described in item 1 of the scope of the patent application, wherein the material of the first dielectric layer includes silicon nitride or stone oxide. 9487twf.ptd Page 16 554470 ^ 'Applicable patent scope, _ 4 · The method for forming an electrical structure in a low-dielectric material layer as described in item 1 of the patent application scope, wherein the material of the second dielectric layer Including nitride or silicon oxide. $ 5 · The method for forming a medium-sized electrical structure in a low-dielectric material layer as described in item 1 of the scope of the patent application, wherein the material of the low-dielectric material layer is an organic material. The method for forming a medium-shaped electrical structure in a low-dielectric material layer as described in item 1 of the scope of patent application, wherein when the low-dielectric material layer is formed, an inorganic material is further included in the low-dielectric material Layer. 7. The method for forming a dielectric structure in a low-dielectric material layer according to item 1 of the scope of patent application, wherein the thickness of the second dielectric layer is greater than the thickness of the one dielectric layer. The method of forming a structure in a low dielectric material layer as described in item 1 of the scope of patent application is a method of Bushett t, in which the thickness of the first dielectric layer is 500 angstroms to 9 ohms. The low dielectric material layer described in item 1 is Angstroms to Angstroms: Angstroms, where the thickness of the low dielectric material layer is _0, and the second junction is structured as described above: Fang Zhuanfali ^ to 3500 Angstroms. The thickness of the first dielectric layer is 2500 angstroms. A method of forming a conductive structure in a low dielectric material layer including a conductive layer, and forming a first dielectric layer on a substrate Floor 9487twf.ptd Page 17 554470 A low dielectric material layer is formed on the first dielectric layer; a human thunder; and a second dielectric layer is formed on the Π material layer, the-) 丨 dielectric layer, the low dielectric material layer, and The second dielectric layer is formed by an in-situ deposition process; a photoresist layer is formed on the second dielectric layer, and the photoresist layer is used as a mask to perform _ 筮 θ μ 々I-The first etching process is used to pattern the first electrical layer to form a first opening; the layer and the second dielectric layer are performed as a curtain-the second Etching: patterning the low-dielectric material layer to form a second opening; drafting :::::: layer is a mask for a third etching process, and the second one is-) 丨The electrical layer 'forms a third opening and exposes the bottom; and a conductive layer is filled in the third opening to form a conductive structure. 1 2 · The method for forming a conductive structure in a low-dielectric material layer as described in item 丨 丨 of the patent application scope, forming the first dielectric layer, the low-dielectric layer, the material layer, and the second dielectric The electrical layer equipment is formed using a plasma gain type chemical vapor deposition machine. The operation steps of the machine include: passing a first inorganic reaction gas into a plasma reaction chamber to form the first dielectric. Layer; passing an organic reaction gas into the plasma reaction chamber to form the low-dielectric material layer; and passing a second inorganic reaction gas into the plasma reaction chamber to form the second dielectric layer . 13. In the low dielectric material layer as described in item 11 of the scope of patent application 9487twt'.ptd Page 18 554470 ί ί The method of the electrical structure, wherein the material of the -dielectric layer includes nitriding you > V · As described in item 11 of the scope of the patent application, the conductive dielectric layer is formed at the center of the low-dielectric material layer. Method, wherein the material of the second dielectric layer includes Shi Xi or silicon oxide. Next, 5. The method for conducting structures in the low-dielectric material layer as described in item 11 of the scope of patent application. 2. The material of the low-dielectric material layer is an organic material. ^, 16 · The method for forming a conductive structure in a low-dielectric material layer as described in item 11 of the scope of patent application, wherein when forming the low-dielectric material layer, it further includes doping an inorganic material into the low-dielectric material layer. In the dielectric material layer. 17, The method for forming a conductive structure in a low dielectric material layer as described in item 11 of the scope of the patent application, wherein the thickness of the second dielectric layer is greater than the thickness of the first dielectric layer. 18. The method for forming a conductive structure in a low-dielectric material layer as described in item i 丨 of the scope of patent application, wherein the thickness of the first dielectric layer is 500 Angstroms to 15,000 Angstroms. 19 · The method for forming a conductive structure in a low-dielectric material layer as described in item 11 of the scope of patent application, wherein the thickness of the low-dielectric material layer is 6000 Angstroms to 40,000 Angstroms. 2 0. The method for forming a conductive structure in a low-dielectric material layer as described in item 丨 丨 of the patent application, wherein the thickness of the second dielectric layer is 2500 angstroms to 3500 angstroms. 9487twf.ptd Page 19