TW554357B - The materials of micro-pores structure and the micro-pores-monolithic structure high frequency capacitors and its process - Google Patents

The materials of micro-pores structure and the micro-pores-monolithic structure high frequency capacitors and its process Download PDF

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TW554357B
TW554357B TW91113991A TW91113991A TW554357B TW 554357 B TW554357 B TW 554357B TW 91113991 A TW91113991 A TW 91113991A TW 91113991 A TW91113991 A TW 91113991A TW 554357 B TW554357 B TW 554357B
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Taiwan
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micro
pores
capacitors
ceramic
frequency
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TW91113991A
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Chinese (zh)
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Chaby Hsu
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Abc Taiwan Electronics Corp
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Abstract

This invention is about a material with micro-pores structure, it's used to manufacture the micro-pores monolithic structure with high frequency capacitors. The main theory is of microchemistry-liquidated transformation, meaning that liquid phase transformation pretexts the non-even-disperse slurry gel to form the sub-micro-meter ceramic powder in macro-cell structure. When a mixture of macro-cell structure powder with aqueous solution binder, this material will turn as micro-pores structures. When this power is used in manufacturing capacitors, by utilize the dielectric ceramic micro-pores monolithic structure (air mediums) will enhance the frequency characteristic of the capacitors.

Description

554357 五、發明說明(1) ---— 化姓i ϊ,係、有關—種孔洞化結構材肖,及利用前述孔洞 生;ίίϊ製作單晶高頻電容器及其方法,具有以簡單的 ^ 乍高附加價值的產品及提高電容器之高頻特性 寻功效。 少米按,陶瓷電容為電容的一種,屬於被動元件。是以陶 ,虽電介質,在圓形陶瓷片兩面電鍍一層金屬薄膜而成。 可依其陶瓷的種類而分成低電介質常數型、高電介質常數 型和半導體型三種。低電介質常數型是使用氧化鈦系的陶 究作為電介質;高電介質常數型是使用鈦酸鋇系的陶瓷作 為’I電質,半導體陶瓷電容是以在鈦酸鋇内添加不純物的 $兗作為介電質。另一種區分方式,則是將陶瓷電容分成 單層型陶瓷電容與積層型陶瓷電容(MLCC)兩種。陶兗電 容的特點在介電係數高,絕緣度好,溫度特性佳,可做成 小尺寸產品,適合用在行動電話等通訊產品,以及筆記型 電腦等輕薄短小產品。 陶莞積層電容其電容值含量與產品表面積大小、陶菱^ ’專膜堆疊層數成正比。近年來由於陶瓷薄膜堆疊技術越來 越進步,電容值含量也越來越高,逐漸可以取代中低電容 值之電容器(如電解電容器和钽質電容器的市場應用), 加上陶瓷積層電容器可以透過SMT直接黏著,生產速度比 電解電容和钽質電容更快,因此陶瓷基層電容的市場發展 越來越受重視,是發展相當快速的電容器產品。然而MLcc 主要原料來自鈀金屬,由於鈀金屬僅產於蘇俄,所以鈀金 的仏格一向與蘇俄動向息息相關。因此MLCC每增加一層554357 V. Description of the invention (1) ----- the surname i ϊ, the related and related—a kind of hole-forming structural material, and the use of the aforementioned holes; Find high value-added products and improve the high-frequency characteristics of capacitors to find efficacy. According to Shaomi, ceramic capacitor is a kind of capacitor, which belongs to passive components. It is made of ceramic, although dielectric, electroplated with a thin metal film on both sides of the circular ceramic sheet. There are three types of ceramics: low dielectric constant type, high dielectric constant type, and semiconductor type. Low-dielectric constant type is the use of titanium oxide-based ceramics as a dielectric; high-dielectric constant type is the use of barium titanate-based ceramics as the 'I' dielectric. Semiconductor ceramic capacitors are based on the addition of impure impurities in barium titanate as the medium Electrical quality. Another way to distinguish them is to divide ceramic capacitors into single-layer ceramic capacitors and multilayer ceramic capacitors (MLCC). The characteristics of ceramic capacitors are high dielectric constant, good insulation, and good temperature characteristics. They can be made into small-sized products, which are suitable for communication products such as mobile phones, and thin and short products such as notebook computers. The capacitance value of the ceramic laminated capacitor is proportional to the surface area of the product and the number of stacked layers of the ceramic film. In recent years, as ceramic thin film stacking technology progresses more and more, the capacitance content is getting higher and higher. It can gradually replace capacitors with low and medium capacitance values (such as electrolytic capacitors and tantalum capacitors in the market). In addition, ceramic multilayer capacitors can pass through. SMT is directly adhered, and the production speed is faster than electrolytic capacitors and tantalum capacitors. Therefore, the market development of ceramic base capacitors is receiving more and more attention, and it is a capacitor product that develops very quickly. However, the main raw material of MLcc comes from palladium metal. Since palladium metal is only produced in Soviet Russia, the grid of palladium gold has always been closely related to the movement of Soviet Russia. So every additional layer of MLCC

554357 五、發明說明(2) 疊層就必須塗上一層内電極,疊層 、 用量的遽增,而由於鈀金屬為稀有主八就造成鈀金屬使 昂貴,使得高電極成本成了量產古】=屬,價格一直相當 礙。 π屬数積層電容的一大障 近年來手攜式通訊用或資訊用消費 系統功能越來越強,意味著相關產品電子產品的終端 高,同時藉由使用頻率的提高來加 $路密度越來越 度。目前產業界所使用的高頻電容器夕^輯數位處理速 020 1產品,而國内積層陶瓷電容製二j為小尺寸0402、 力尚未完帛,故相關的元件皆仰 外“、尺寸的製程能 發展,高科技產品所需要的材=二隨著科技的 頭痛萬分。且由於陶竟材料一般 =d而要也令業者 強度不高、可靠度不佳,·自198:;=點是:動性低、 峰一提出多項奈米(Nano—meter)複合材料教 勻分散於基材中,藉由微結構的改良,二 顯地強化基材,使之具有特異的機械性質, = 材料的可靠度。而奈米陶竟複人材枯 瓷 .V 士仏Α 卞u尤稷口材枓之特點係為顆粒細 :、刀布均勻’但因細微顆粒極易受凡得瓦力及其它作 =的影響而結團’分散格外困難,且易造成晶粒的過度成 。因此’在调製複合漿體階段’選擇能夠與第二相化人 :組合的陶i基底材料’以及使用適合之分散狀況非常^ 又有一種含鹽酸之Semi carbazide作為分散劑之氧化 鋁粉末水膠態分散液。氧化鋁在精密陶瓷的製造上一直佔 554357 五、發明說明(3) 有非常重要的地位,尤其電子產業中的基板,以及各種高 強度耐磨物品均朝著使用高純度(>99%)氧化鋁之方向發 展二此等精密陶瓷物品的製法基本上包含將可燒結之高純 j氧化結粉體成形為一具特定形狀之陶瓷坏體,再將坏體 燒結成一陶莞物品。近來的研究發現,利用膠體製程法 Wol lcndal Pf〇cessing)是提高氧化鋁陶瓷體強度的有效 =法’而且可以利用注漿成形(Slip Casting)或是高壓注 浆(Pressure Casting)成形作成形狀複雜之陶瓷坏體,其 、中使用粒度分佈均勻、無明顯聚結(Aggl〇merated)如次微 米(Sub-crometer)氧化鋁粉末來製成一分散液及經由一 ί = 成一坏體’該坏體經適度乾燥後再被燒結出- ,械強度。一般常用之分散劑主要可分=類因= ^要使氧化鋁顆粒在溶液中形成表面電 力;另第-類是藉由高分子的吸附而產生立體:斥 (s = ric Hindrance),來達到分散穩定的效果。古 之氧化鋁粉末置於強酸或強驗的 ^ 變化為弱酸或弱驗,此為一般高表=之= 液會 用’因此毁料會形成類似凝膠面大易, 高,無法順利浮出聚料表面。因此最常大用?〔泡因枯度過 陶纖PH值的調整為之,例如我藉* 79100101號(公告第1 47864號),但對古 ^案第 果並不理想。選擇高分子作為分散劑;,其積之氧化鋁效 554357 五、發明說明(4) 表面之吸附、分解或將 其是分子量高的高 :二-黏度等行為非常複雜,尤 響深遠。 子刀政劑,因此對燒結陶兗物品的影 如前所述,習用陶瓷電容 間能夠有最密堆積的結構,以二於燒結後多數要求粉體 時積層陶瓷電容器所使二::容器的電氣特性。同 本的3。%左右,高材料成本低產:價,夂約佔產品成 企業能夠接受。然而若能將孔洞化、J的電谷二不是-般 直接沖模成形,同時借由空氣媒介、':冓的陶竞材料,利用 提供高頻條件。以最簡 早日日結構)來 相乜疋未來從事材料研究者需要突破 座 緣是,本發明之主要目的即在提 材料赞i生太、本,甘+ # Y 種孔洞化結構 柯科h方法」,#主要係將適當比例的介: :種有機溶劑乙醇與甲苯及分散劑調酉己,以j保均:, 政’再以多種不同粒㈣球低速研磨 ^ 取適當比例聚乙烯醇及水調配成之黏結齊,心=2 ’ 粒劇烈授拌,4到生成乳狀膠體後,烘月二:广粉 成孔洞化結構材料。 粍成固體狀’即製 電容ΪΪ:之另:ΐί目的在提供一*「孔洞化單晶高頻 ,二盗1法」’其主要係將孔洞化結構材料經粉碎 麼模成形、燒結、去毛邊及端電極製程後製 '、 高頻電容器者。 U成孔洞化單晶 本發明之又一主要目的在提供一種「孔洞化單s古 電容器」,主要包括有介電陶瓷層與至少二個日日0'頁 一丨回电極,其特554357 V. Description of the invention (2) The laminated layer must be coated with an internal electrode, and the amount of the laminated layer is increased. However, because the palladium metal is rare, the palladium metal is expensive, which makes the high electrode cost a mass production. 】 = Yes, the price has always been a hindrance. One of the major obstacles of π is a number of multi-layer capacitors. In recent years, portable communication or information consumer systems have become more and more powerful, which means that the terminals of related products and electronic products are higher. At the same time, the higher the frequency of use, the higher the circuit density. More and more. At present, the high-frequency capacitors used in the industry are digitally processed at high speed 0201 products, while domestic multilayer ceramic capacitors are small in size 0402, and the force has not yet been completed, so the related components are all “outside” and size processes. To develop, the materials needed for high-tech products = 2 It is a headache with technology. And because the ceramic materials are generally = d, the strength of the industry is not high, and the reliability is not good, since 198 :; = points are: Low mobility, peak one proposes that a number of nanometer composite materials are evenly dispersed in the substrate. Through the improvement of the microstructure, the substrate is significantly strengthened to have specific mechanical properties. = Material's Reliability. Nano-ceramics are actually made of dried porcelain. V 仏 卞 卞 稷 稷 稷 枓 枓 枓 枓 is characterized by fine particles: uniform knife cloth, but because the fine particles are very susceptible to Van der Waals and other works = The impact of the formation of agglomerates' is extremely difficult to disperse, and it is easy to cause excessive formation of crystal grains. Therefore, at the stage of preparing the composite slurry, select a base material that can be combined with the second phase: a combined ceramic base material and use it appropriately. Very dispersed ^ Another semi carbazide containing hydrochloric acid Aqueous colloidal dispersion of alumina powder as a dispersant. Alumina has always accounted for 554357 in the manufacture of precision ceramics. 5. Description of the invention (3) It has a very important position, especially the substrate in the electronics industry, and various high-strength wear-resistant Articles are developing in the direction of using high-purity (> 99%) alumina. The manufacturing method of these precision ceramic articles basically includes forming a sinterable high-purity j-oxide powder into a ceramic bad body with a specific shape. Then, the bad body is sintered into a ceramic object. Recent research has found that the use of the glue method (Wol lcndal Pfcessing) is an effective method to increase the strength of alumina ceramic bodies and that it can be made by Slip Casting or It is a high-pressure grouting (Pressure Casting) molding to form a ceramic bad body with complex shapes. It uses uniform particle size distribution and no obvious agglomeration (Agglomomer) such as sub-crometer alumina powder to make a dispersion. Liquid and through a ί = into a bad body 'The bad body is moderately dried and then sintered-mechanical strength. Generally commonly used dispersants can be divided into = class factor = ^ to make alumina particles The surface electricity is formed in the solution; the other one is the generation of three-dimensional: repulsion (s = ric Hindrance) through the adsorption of polymers to achieve the effect of dispersion stability. The ancient alumina powder is placed under strong acid or strong ^ changes For weak acid or weak test, this is a general high table = of = liquid will be used 'So the material will form a gel-like surface easily, high, can not smoothly float out of the polymer surface. So the most commonly used? I spent the adjustment of the pH value of ceramic fiber. For example, I borrowed * 79100101 (Publication No. 1 47864), but it is not ideal for the ancient case. Choose a polymer as a dispersant; its alumina effect 554357 V. Description of the invention (4) The adsorption, decomposition or high molecular weight of the surface: two-viscosity and other behaviors are very complicated, especially profound. Sub-knife agent, so the effect on the sintered pottery ware is as described above. The conventional ceramic capacitors can have the most densely packed structure, which is two times as much as the multilayer ceramic capacitor when powder is required after sintering. Electrical characteristics. Same as 3. %, High material cost and low production: price, which accounts for about 90% of the product. Enterprises can accept it. However, if the holes can be made, J's Electric Valley II is not directly punched into a mold. At the same time, it can be used to provide high-frequency conditions through the use of air media and ceramic materials such as': 冓. With the simplest and early structure), future researchers in materials need to break through the fate. The main purpose of the present invention is to improve the material quality and quality of the material. ”, # Mainly refers to the appropriate proportion of :: an organic solvent, ethanol and toluene and a dispersant to adjust it, and j Baojun :, administrate the low-speed grinding of a variety of different pellets ^ take an appropriate proportion of polyvinyl alcohol and The water mixes together, and the heart is equal to 2 '. The granules are vigorously mixed. 4 After the milky colloid is formed, the second month is baking: the flour becomes a porous structure material.粍 Into a solid state, that is, to make a capacitor ΪΪ: Another: ΐThe purpose is to provide a * "hole-forming single-crystal high-frequency, two-pirate 1 method", which is mainly formed by pulverizing the structure material, sintering, removing Manufacture of burrs and terminal electrodes, and high-frequency capacitors. U-formed single crystal Another main object of the present invention is to provide a "hole-shaped single-s ancient capacitor", which mainly includes a dielectric ceramic layer and at least two daily electrodes.

554357 五、發明說明(5) 欲在於·該介電陶 、 介電陶究的孔洞化w曰具有中空結晶體的孔洞化結構,藉 器之高頻特性者。早晶結構’借由空氣媒介’以提高電容 1.微::二::發明所應用的理論闡明如下: 液-液相變化(1 i · 士双口口 n 4Uld—liquid phase transformation ) ^ 1 用有機系漿料内既有的兩種有機溶劑-甲 成混合,❻是甲苯ί =子黏結劑混合後,乙醇與水可完 親水官能基不: = ;ί官能基會相互排斥。制甲笨-料(參第丄圖中所表特Λ加以授拌,刻意調配成乳膠狀聚 聯於㈣巾。如第2表;;的乳膠區),進而將陶竟粉末膠 ¥ ^ A t β Μ ί 2圖所不,乳膠中大粒徑粉末因為凡得 π眭古八工私」Γ 粒徑則填補在大粒徑粉團外圍, :時冋刀子黏結劑與無機材料形 , 為粒徑分散模擬圖,复中筮9 1 ^幻/、彳貝鍵【弟2圖 〇 9 ®+ A制Λ,、第1圖所示為均勻分散,第 2 - 2圖所不為製成乳膠後所產生的第 即可使陶瓷燒結後製造出自麸 办勾刀月丈】如此 晶結構。 …、而均句的空間,形成孔洞單 2 · 物理部份: 為使粉體間有如上述的結果, 粉末混合。採用小粒徑粉末以次微米有不同粒徑的陶究 可,若粒徑採用奈米級,燒結將造^^ α (如〇· 13 //m )即 產品電氣特性。同時為考慮電子陶=饧成分飛散,影響 意燒結時的升溫條件,才能得到梦、,、他特性問題,如注 平又佳的效果。554357 V. Description of the invention (5) The intention is that the dielectric ceramics, the porosity of the dielectric ceramics, have the pore structure of the hollow crystals, taking advantage of the high-frequency characteristics. Early-crystal structure 'capacity by air medium' to increase capacitance 1. Micro :: 2 :: The theory applied to the invention is clarified as follows: Liquid-liquid phase change (1 i · Shishuangkou n 4Uld—liquid phase transformation) ^ 1 The two organic solvents existing in the organic slurry are mixed with formazan, toluene is toluene, and after mixing with a sub-binder, ethanol and water can complete the hydrophilic functional groups: =; The functional groups will repel each other. Nail-making materials (refer to the table Λ in Figure 丄 for mixing, and deliberately mix into a latex-like polyunion on the towel. See Table 2 ;; latex area), and then make Tao Jing powder glue ¥ ^ A t β Μ ί As shown in the figure 2, because of the large particle size of the latex, π 眭 古 八 工 工 私 ”“ Γ particle size fills the periphery of the large particle size powder: when the shape of the knife binder and inorganic materials is Particle size dispersion simulation chart, Fuzhong 19 1 ^ Magic /, 彳 shell key [brief 2 figure 〇 09 ® + A Λ, the first figure shows uniform dispersion, the second figure is not made After the latex is produced, the ceramic can be sintered to produce a bran-shaped hook knife. …, And the space of uniform sentence forms a hole list 2 · Physical part: In order to achieve the above results between powders, the powders are mixed. The use of small-sized powders with sub-microns has different particle sizes. If the particle size is nanometer, sintering will result in ^^ α (such as 〇 · 13 // m), which is the electrical characteristics of the product. At the same time, in order to take into account the scattering of the electronic ceramics and rhenium components and affect the heating conditions during sintering, we can obtain the dream, other, and other characteristics, such as flat and good results.

第9頁 554357 五、發明說明(6) 本發明孔洞化結構材料製造方、+ ^ 衣每万法包括有以下的步驟· 調漿··取適當比例的介電陶瓷材 。 t ^ ,, "十(DielectricPage 9 554357 V. Description of the invention (6) The manufacturing method of the hole-forming structure material of the present invention includes the following steps: • Mixing the slurry. • Taking a proper proportion of the dielectric ceramic material. t ^ ,, " 十 (Dielectric

Ceramics)與二種有機溶劑乙醇(Et〇 愈 (丁〇1 uene )及分散劑調配(黏戶旲 ” 下),以確保均勾分散,再以磨度球取;^控制在10 cp以产 化紹磨球…等)研磨授拌成次如氧化錯磨球、乳 黏結劑製備··取適當比例的聚r 二 ,^ J G烯醇(PVA)及水,攪拌 均勻; 添加黏結劑··將前述次微米粉你將 下物袓漿料與黏結劑合, 拌均勻,直到生成乳狀膠體。 m 乾燥:將前步驟乳狀膠體饵菸成m ^ 構材料。 篮九、乾成固體,即製成孔洞化結 本發明以磨球研磨攪拌時, 球,以低速研磨的方式實施,π古知用夕種不同粒徑的磨 & ^ ^ 、 可有效縮短漿料研磨日年門 再者,本發明可利用诰 ν丨丁 π β吋間。 化單晶高頻電容器,其步騾:要:::構材料來製造孔洞 造粒·將前述孔洞彳卜#彳妓 /曰士 a同、』 化、、、吉構材料於研缽中磨細,罢认& 治具中沖壓成錠。 丨’ τ保細,置於特殊 燒結·將月’j述孔洞作彡上 *鬥,报占了丨、 匕、、'°構材料錠燒結成具自铁而的— 製成孔洞化單晶高頻二:左去毛邊及知電極製程後, 本發明前述燒結·和益者。 AJb ϋ Μ ΘΙ ty 和'的升溫設定’為考膚雷to 他特性問4,係以二 。’愿%子陶瓷其 太鉻日日了丨、 ~又持溫的方式,以得到軔估从l 本明孔洞化覃曰a j平又佳的效果。 早日日向頻電容器製程中不可 』以—般的端 554357Ceramics) and two kinds of organic solvents ethanol (Et〇 Yu (but 〇〇1 uene)) and dispersing agent (under the viscosity), to ensure uniform dispersion, and then take a grinding ball; ^ Controlled at 10 cp to produce Grinding balls ... etc.) Grinding and mixing times such as oxidized misballs, milk bonding agent preparation ... Take the appropriate proportion of polyr ^ JG enol (PVA) and water, stir well; add the bonding agent ... Mix the aforementioned submicron powder with the binder and mix it until a milky colloid is formed. M Drying: The milky colloid bait from the previous step is smoked into a m ^ structure material. Basket nine, dried into a solid, That is, the hole is formed. When the ball is milled and stirred in the present invention, the ball is implemented at a low-speed grinding method. Π is known to use different types of mills with different particle sizes. In the present invention, 诰 ν 丨 丁 π β inches can be used. To convert single-crystal high-frequency capacitors, the steps are as follows: To ::: Construct a material to make holes and granules. At the same time, the materials of the 吉, 吉 and 吉 are ground in a mortar, and the & fixture is stamped into an ingot. 丨 'τ Fine, placed on a special sintering · hole hole as a bucket. It is reported that the ingot of 丨, dagger, and ° structural material is sintered to form a self-iron—to make a single crystal high-frequency hole: After deburring left and knowing the electrode manufacturing process, the aforementioned sintering and benefiting parties of the present invention. AJb ϋ Μ ΘΙ ty and the 'temperature setting' are Kou Fulei to his characteristic question 4, which is based on two. Chromium is getting hotter and colder in order to get the best results from the mystery of the hole, and the aj flatness. The early process is not possible in the frequency capacitor manufacturing process.

電極方式製作。一般製作端電極兩 錫,但是孔洞結構不可經過電鍍而要:端銀、鍍鎳、鍍 留於孔洞中。最佳端電極方式^續^免造成電鍍液成份殘 Sputtering ),因為真空濺鍍方用真空濺鍍( 1.設備費用低; 八具有以下優點: 2 ·直接鍍上電極,較傳統製程 7丨、 3·濺鍍端極面,機械強度較強;‘程; 4.精度南。 又 容器, 至少二 洞化結 介,以 孔 器,可 MLCC ) 最簡易 陶瓷電 機、汽 高電流 者的需 的陶瓷 以 明: ,依據本發明前述製法所掣 請參閱第3圖所示,孔洞化單晶高頻電 構,藉該介電陶究』同層二有中空結晶體的孔 提高電容器之高化早晶結構,借由空氣媒 作高ί振頻率(srf )的陶瓷電容 70古王,、目同電氣特性的積層式陶瓷電容器( :止本問題及小尺寸製程不穩定問題。同時也以 —產製程製作出某些f氣特性高於Μ·或圓板形 谷裔的高頻特性。其應用面包括了 :通信手 車電沽、無線傳輸產品,資訊----PDA、NB、高頻 ,位邏輯運异整合產品。未來應用性將隨電路設計 〉、利用孔洞化原理製作發展出更多不同材料特性 電容器。 下列舉一本發明較佳可行實施例進一步來驗證本發Electrode method. Generally, the terminal electrode is made of two tins, but the hole structure cannot be electroplated: silver, nickel, and plating remain in the holes. The best terminal electrode method ^ continued ^ to avoid causing residual sputtering of the plating solution), because the vacuum sputtering method uses vacuum sputtering (1. the equipment cost is low; 8 has the following advantages: 2) direct electrode plating, compared with the traditional process 7 丨3, Sputter plating end pole surface, strong mechanical strength; 'process; 4. Accuracy of South. And the container, at least two holes in the junction, with a hole device, can be MLCC) The simplest ceramic motor, steam high current needs According to the foregoing manufacturing method of the present invention, please refer to FIG. 3, and the single-crystal high-frequency electrical structure is hollowed out. This dielectric ceramic is used to study the hole of the same layer with a hollow crystal to improve the capacitor's height. Early-crystal structure, 70-year-old king of ceramic capacitors with high frequency (srf) by air medium, multilayer ceramic capacitors with the same electrical characteristics (: this problem and the problem of small size process instability. At the same time- The production process has produced some high-frequency characteristics with higher gas characteristics than M · or disc-shaped cereals. Its application areas include: communication handcarts, wireless transmission products, information-PDA, NB, Gao Integrated products with high frequency and bit logic. Future applications The circuit design with>, the principle of making use of the hole to develop more different material properties of the capacitor. Under the invention include a preferred possible embodiment of the present invention is further verified

554357 五、發明說明(8) 調漿·取;I電陶兗材料(Dieiectric Ceramics) 137.87g、乙醇(EtOH)25.〇6g、甲苯(Toluene)37.06g 及分 散劑(如BYK-1 1 1 )2· 76g(介電陶瓷材料的2· 〇%量)黏度控 制在10 cp以下’以確保均勻分散,以必=3龍:1〇匪: 30mm = 5 : 3 : 2之氧化鍅球低速研磨攪拌12 Hrs。(粉體 粒徑=0 · 1 0〜0 · 1 4 // m )【以前述三種不同粒徑氧化鍅球低速 研磨方式較習用方法可節省丨/ 2以上研磨時間】; 黏結劑製備:取聚乙烯醇(pVA)〇. 4g加入9. 6g水中,攪 拌均勻(PVA = 4%);554357 V. Description of the invention (8) Mixing and taking; I 137.87g of Dieiectric Ceramics, 25.06g of EtOH, 37.06g of Toluene and dispersant (such as BYK-1 1 1 ) 2.76g (2.0% of the dielectric ceramic material) viscosity is controlled below 10 cp 'to ensure uniform dispersion, must be = 3 dragons: 10 bandits: 30mm = 5: 3: 2 Grind and stir for 12 Hrs. (Powder particle size = 0 · 1 0 ~ 0 · 1 4 // m) [the three low-speed grinding methods of osmium oxide balls with different particle sizes can save more grinding time than conventional methods 丨 / 2 grinding time]; preparation of adhesive: take Polyvinyl alcohol (pVA) 0.4 g was added to 9.6 g of water and stirred well (PVA = 4%);

取調漿步驟粉體(粒徑〇· 13 //m)5g漿料,加入5g的4%PVA 中^激烈攪拌,直到生成乳狀膠體之後,烘乾成固體; 化粒·將Θ步驟中的塊狀固體於研钵中磨細,取0 · 5 g細 粉於特殊治具中沖壓成錠; $結·以二段持溫方式其升溫設定請參閱第4圖; 邊、端^、測電性,而完成孔洞化單晶高頻電容器。 本發明刖述實施例試驗結果請參閱以下附圖: =5圖為研磨時間對粒徑關係圖。 ” n為燒結溫度對介電常數及孔隙度關係圖。(孔隙 度回於1 8 %時機;^ % γ 0 _ 厭知$ 7 、戍械強度不足,同時製作成電容器後,耐電 縻相當低。) 第圖^為本發明製作電容器後頻率特性圖: 電容值測試條件:1.0 volt 1MHz for HP 4194A hk meter 頻率測試:HP S7CQI7 . 〇«53E network analyzerTake 5g of powder (particle size 0.13 // m) in the mixing step, add 5g of 4% PVA ^ and stir vigorously until a milky colloid is formed, and then dry into a solid; The solid block is ground in a mortar, and 0. 5 g of fine powder is punched into an ingot in a special jig; $ 结 · The temperature setting of the two-stage holding mode is shown in Figure 4; Electrically complete the single crystal high frequency capacitor. Please refer to the following drawings for the test results of the described examples of the present invention: FIG. 5 is a graph showing the relationship between the grinding time and the particle size. ”N is the relationship between the sintering temperature and the dielectric constant and porosity. (The porosity returns to 18% of the time; ^% γ 0 _ Ignore $ 7, the mechanical strength is insufficient, and the capacitor has a relatively low electrical resistance. ) Figure ^ is the frequency characteristic diagram after the capacitor is manufactured according to the present invention: Capacitance value test conditions: 1.0 volt 1MHz for HP 4194A hk meter Frequency test: HP S7CQI7. 〇 «53E network analyzer

第12頁 囷式簡單說明 圖式之簡要說明: 第1圖係本發明液—液相變化示意圖。 第2圖係本發明粒徑分散模擬示意圖。 其中’第2 -1圖係習用粒子均勻分散示意圖。 第2 - 2圖係本發明粒子不均勻分散示意圖。 第3圖係本發明孔洞化單晶高頻電容器剖面圖。 第4圖係本發明升溫設定圖。 其中’第4 - 1圖為本發明升溫設定步驟表。 第4-2圖為依第4-1圖設定之溫度-時間監控圖(由 THERMOTRACKER溫度監控器繪出)。 第5圖係本發明研磨時間對粒徑關係圖。 其中’第5-1圖係本發明研磨時間對粒徑關係表。 第5 - 2圖係依第5 - 1圖繪製之研磨時間對粒徑關 圖。 ’、 第6圖係本發‘明燒結溫度對介電常數及孔隙度關係圖。 其中,第6-1圖為燒結溫度對介電常數及孔隙度關係 '.第6-2 丨燒結溫度對介電常數及㈣度關係圖 第7圖為本發明製作電容器後頻率特性圖。 ’、圖 二種陶瓷電容器、 容值Page 12 Brief description of the formulae Brief description of the drawings: Figure 1 is a schematic diagram of the liquid-liquid phase change of the present invention. Figure 2 is a schematic diagram of particle size dispersion simulation of the present invention. Among them, Fig. 2-1 is a schematic diagram of uniform dispersion of conventional particles. Figures 2-2 are schematic diagrams of uneven dispersion of particles of the present invention. FIG. 3 is a cross-sectional view of a cavity-shaped single crystal high-frequency capacitor according to the present invention. Fig. 4 is a temperature setting map of the present invention. Among them, Fig. 4-1 is a table for setting the temperature rise of the present invention. Figure 4-2 is the temperature-time monitoring chart set by Figure 4-1 (drawn by THERMOTRACKER temperature monitor). Fig. 5 is a graph showing the relationship between the grinding time and the particle diameter of the present invention. Among them, Fig. 5-1 is a table showing the relationship between the grinding time and the particle diameter of the present invention. Figure 5-2 is a graph of grinding time versus particle size plotted in Figure 5-1. Figure 6 shows the relationship between the open sintering temperature and the dielectric constant and porosity of the present invention. Among them, Fig. 6-1 is the relationship between sintering temperature and dielectric constant and porosity. Fig. 6-2 丨 Sintering temperature and dielectric constant and porosity relationship. Fig. 7 is the frequency characteristic diagram after the capacitor is manufactured according to the present invention. ’, Figure Two types of ceramic capacitors, capacitance value

其中,第7-1圖為NP0、X7R及OTHER 對自我共振頻率統計表。· 頻率及耐電壓 第7-2圖係0603尺寸電容器電容值 統計表。 第7-3 圖係1008 size NP0 3.2 pF 由HP 8753e network analyzer繪製之史密斯圖。Among them, Figure 7-1 is a statistical table of self-resonance frequencies of NP0, X7R and OTHER. · Frequency and withstand voltage Figure 7-2 is a statistical table of capacitance values of 0603 size capacitors. Figure 7-3 is a 1008 size NP0 3.2 pF Smith chart drawn by the HP 8753e network analyzer.

第14頁 554357 圖式簡單說明 第7-4 圖為1008 size other 1.31pF 由HP 8753E network ana 1 yzer繪製之史密斯圖。 第7-5 圖為 1 0 08 size X7R 12.1 pF 由HP 8753E network analyzer繪製之史密斯圖。 第7-6 圖為0805 size other 1.10 pF 由HP 8753E network analyzer繪製之史密斯圖。 第7-7 圖為0805 size X7R 9.5 pF 由HP 8753E network analyzer繪製之史密斯圖。 第7-8 圖為0603 size other 0·60 pF 由HP 8753E network analyzer繪製之史密斯圖。 第7-9 圖為 0603 size X7R 10.69 pF 由HP 8753E network analyzer繪製之史密斯圖。 圖式中之參照號數: (1) 介電陶瓷層 (2) 電極Page 14 554357 Simple illustration of the diagram Page 7-4 is a Smith chart drawn by HP 8753E network ana 1 yzer with 1008 size other 1.31pF. Figure 7-5 shows the Smith chart drawn by the HP 8753E network analyzer at 1 0 08 size X7R 12.1 pF. Figure 7-6 shows the Smith chart of 0805 size other 1.10 pF by HP 8753E network analyzer. Figures 7-7 are Smith charts of 0805 size X7R 9.5 pF drawn by HP 8753E network analyzer. Figure 7-8 is a Smith chart drawn by HP 8753E network analyzer with 0603 size other 0 · 60 pF. Figures 7-9 are Smith charts of 0603 size X7R 10.69 pF drawn by HP 8753E network analyzer. Reference numbers in the drawings: (1) Dielectric ceramic layer (2) Electrode

第15頁Page 15

Claims (1)

554357 六、申請專利範圍 空間,形成孔洞單晶結構;再經去毛邊及端電極製程後, 製成孔洞化單晶高頻電容器者。 4. 依據申請專利範圍第3項所述之「孔洞化單晶高頻 電容器製法」,其中,該燒結步驟的升溫設定,係以三段 持溫的方式者。 5. —種「孔洞化單晶高頻電容器」,主要包括有介電 陶瓷層與至少二個電極,其特徵在於:該介電陶瓷層具有 中空結晶體的孔洞化結構,藉介電陶瓷的孔洞化單晶結 構’借由空氣媒介’以提南電容之南頻特性者。554357 VI. Scope of patent application Space to form a hole single crystal structure; and then to make a hole-shaped single crystal high-frequency capacitor after deburring and terminal electrode process. 4. According to the "Cavity Method for Single-Cavity High-Frequency Capacitors" described in item 3 of the scope of the patent application, the temperature setting of the sintering step is performed in a three-stage holding method. 5. A kind of "hole-forming single-crystal high-frequency capacitor", which mainly includes a dielectric ceramic layer and at least two electrodes, which is characterized in that the dielectric ceramic layer has a pore-like structure of a hollow crystal body and borrows the holes of the dielectric ceramic. Those who change the single crystal structure 'through the air medium' to improve the south frequency characteristics of the south capacitor. 第17頁Page 17
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110797194A (en) * 2018-08-01 2020-02-14 三星电机株式会社 Multilayer capacitor comprising a liquid pocket

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110797194A (en) * 2018-08-01 2020-02-14 三星电机株式会社 Multilayer capacitor comprising a liquid pocket
CN110797194B (en) * 2018-08-01 2022-08-16 三星电机株式会社 Multilayer capacitor comprising a liquid pocket

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