TW554260B - A below 193 nm UVU transmitting glass photomask, the method of making their blank, the method of making said glass and the method of making homogenous glass optical element - Google Patents
A below 193 nm UVU transmitting glass photomask, the method of making their blank, the method of making said glass and the method of making homogenous glass optical element Download PDFInfo
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- TW554260B TW554260B TW090124463A TW90124463A TW554260B TW 554260 B TW554260 B TW 554260B TW 090124463 A TW090124463 A TW 090124463A TW 90124463 A TW90124463 A TW 90124463A TW 554260 B TW554260 B TW 554260B
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1407—Deposition reactors therefor
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
- C03B19/1423—Reactant deposition burners
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/0085—Compositions for glass with special properties for UV-transmitting glass
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/07—Impurity concentration specified
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- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/07—Impurity concentration specified
- C03B2201/075—Hydroxyl ion (OH)
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/08—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
- C03B2201/12—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant doped with fluorine
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
- C03B2201/21—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with molecular hydrogen
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/30—For glass precursor of non-standard type, e.g. solid SiH3F
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/30—For glass precursor of non-standard type, e.g. solid SiH3F
- C03B2207/32—Non-halide
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/36—Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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- C03B2207/36—Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives
- C03B2207/38—Fuel combinations or non-standard fuels, e.g. H2+CH4, ethane
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- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/08—Doped silica-based glasses containing boron or halide
- C03C2201/12—Doped silica-based glasses containing boron or halide containing fluorine
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/21—Doped silica-based glasses containing non-metals other than boron or halide containing molecular hydrogen
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- C—CHEMISTRY; METALLURGY
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/23—Doped silica-based glasses containing non-metals other than boron or halide containing hydroxyl groups
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- C—CHEMISTRY; METALLURGY
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
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- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
- C03C2201/32—Doped silica-based glasses containing metals containing aluminium
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- C03C2203/00—Production processes
- C03C2203/50—After-treatment
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Abstract
Description
554260 A7 B7 五、發明説明(l ) 相關申請案: 本申請案主要依據下列專利主張優先權:2000年12月 22曰申請之美國第60/258132號專利臨時申請案該專利名 稱為’’Substantially Dry,Silica-Containing Soot,554260 A7 B7 V. Description of Invention (l) Related applications: This application claims priority based on the following patents: US Provisional Patent Application No. 60/258132, filed on December 22, 2000. The patent name is `` Substantially Dry, Silica-Containing Soot,
Fused Silica And Optical Fiber Soot Preforms, Apparatus, Methods And Burners For ManufacturingFused Silica And Optical Fiber Soot Preforms, Apparatus, Methods And Burners For Manufacturing
Same And Method Therefore” 以及2001 年2月 24 日申請之美 國第60/271136號專利臨時申請案,該專利名稱為”Vacuu[nSame And Method Therefore "and the provisional US Patent Application No. 60/271136, filed on February 24, 2001, entitled" Vacuu [n
Ultraviolet Transmitting Silicon Oxyfluride Lithography Glass' 以及 2001 年2 月 24 日 申請之美國第 60/271 135號專利臨時申請案,該專利名稱為”0xygen D〇ping 〇;f Silicon Oxyfluride Glass”,以及2000年9月8日申請之 世界專利組織第W0 01/17919號專利臨時,該專利名稱為,, Pure Fused Silica,Furnace And Method'這些專利在 此加入作為參考之用。 發明領域: 經濟部中央標準局員工消費合作社印製 本發明係關於光石版印刷法,以及特別是關於光石版 印刷玻璃以使用於光石版印刷系統,該系統使用低於193nm 之真空紫外線(VUV)波長,優先地低於175nm,更優先地低於 164nm,例如使用l57nm區域波長之VUV投射光石版印刷系統。 本發明係關於VUV透射玻璃,其在低於193nm波長下為 透射性,特別是光遮罩矽氧氟化物玻璃適合使用於真空紫 外線(VUV)157nm波長區域。 發明背景: 本紙張尺度適用中國國家檁準(CNS ) A4規格(210X 297公釐〉 554260 Α7 Β7 五、發明説明(:2 ) 經濟部中央標举局員工消費合作社印製 、斤射性光學元件需要高透射性材料。對於外形越來越 小之半導ft顧需要248喊及193讀長,高純度炼融石夕 石已顯示需要最小透射度為99%或更佳。 日使用低於193M1之真空紫外線波長投射光石版印刷系 統提供達成較小外形尺寸之優點。使用157nm波長區域之 真空紫外線波長之系統具有以較小外形尺寸而具有改善集 體線路之潛力。目前在製造集體線路半導體業界所使用之 光石版印刷系統已朝向較短波長之光線發展,例如248咖以 及193nm波長,但是商業上使用低於193咖例如157nm之真空 紫外線波長受阻於該157nm區域真空紫外線波長透射通過 光學材料之特性。半導體業界使用低於175哪例如15711{11之 VUV光線的緩慢進展係由於缺乏由光學透射性材料經濟地 製造出光遮罩毛胚所致。對於在157咖區域真空紫外線光 石版印刷優點例如在製造集體線路中所使用卜準分子雷射 之發射頻譜VUV頻窗,存在遮罩毛胚之需求,其具有有益的 光學特性例如在低於164nm以及157nm下良好的透射性以及 能夠經濟地製造出。 本發明克服先前技術之一些問題以及提供經濟性高品 質之改善遮罩毛胚以及VUV透射光石版印刷玻璃,其能夠使 用來改善利用真空紫外線波長集體線路之製造。 在光石版印刷中使用高純度溶融矽石作起源於高純度 熔融矽石在寬廣波長範圍由紅外線至深紫外線區域内為透 射性。除此,高純度矽石呈現出非常良好的化學耐久性以 及尺寸穩定性。在歐洲第0636586A1專利案中為了在248nm 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇χ297公楚) (請先閲讀背面之注項再本頁) 教 554260 A7 B7 五、發明説明(3 ) 經濟部中央標準局員工消費合作社印製 至193nm波長下適合作為蚊光^版印繼狀遮罩基質, 由直接火焰方法製造出高純度熔融矽石必需含有1〇π至1〇1g 分子/立方公分之大量分子氫。同樣地,Jp 專利 揭不出合成石英玻璃使用作為光遮罩材料,其光學特性由 於喷塗,等離子蝕刻或準分子照射而導致變化,該材料能夠 在氫氣中藉由加熱處理玻璃而回復最初之條件。特別地, 該文獻說明合成石英暴露於248及193nm波長之影響。暴露 於248nm及193nm波長對炼融矽石之影響亦說明於g〇rreH i 專人之 Densifi cat ion of Fused Silica under 193 nm excitation", J. Opt. Soc. Am. B/Vol. 14, No. 7, pp.1606 1615 (July 1997);以及Allan等人之n193nm excimer -laser-induced densification of fused silica' Optics Letters, Vol. 21, No. 24, pp. 1960-1962 (Dec. 5, 1996)。 ’ 我們先前已揭示出數種有效方法以改善高純度熔融矽 石使用作為248nm以及193nm波長區域光石版印刷中光學透 鏡之光學特性。參閱例如美國第5616159, 5668067及57359 21號專利,該專利之說明在此加入作為參考。 因而本發明目標在於揭示出VUV透射性直接沉積玻璃 化之矽氧氟化物玻璃以使用於低於193nm VUV波長,該波長 優先地在F2準分子雷射157nm區域,製造該玻璃之方法,及 製造乾燥直接沉積玻璃化光石版印刷玻璃物體之方法。 發明大要: 在本發明中我們揭示出VUV透射性乾燥直接沉積玻璃 (請先閲讀背面之注意事項再^^本頁) 訂 本紙張尺度適用中國國家標準(CNS ) A4規格(210&297公釐) 554260 A7 經濟部中央標準局員工消費合作社印裝 五、發明説明(φ ) 化之矽氧氟化物光石版印刷玻璃而適合作為光學元件,以 使用為透鏡或優先地使用作為低於193nm VUV波長之光學 遮罩基質。特別地,本發明直接沉積玻璃化之石夕氧氟化物 玻璃產物呈現出優點特別適合作為光石版印刷物體以及應 用於光石版印刷157nm準分子雷射波長附近以及低於i93nm 之νυν波長區域。 本發明目標藉由使用乾燥低羥基摻雜氟Si(Mf融之直 接沉積玻璃化合成矽氧氟化物玻璃而達成,該玻璃在真空 紫外線(VUV)波長區域中呈現出高透射性,同時呈現出極良 好的熱學以及物理特性。所謂”乾燥”係指具有㈨含量低於 50ppm重量比,優先地去氫低於1〇??111重量比以及最優先地 低於lppm重量比。 本發明另外一項目標在於藉由確保乾燥直接沉積玻璃 化之矽氧氟化物玻璃實質上並不含有氣氣。 本發明另外一項目標在於確保乾燥直接沉積玻璃中分 子氫為低含量。此係指分子氫(H2)含量低於lxio17分子/ 立方公分。在本發明優先實施例中,VUV透射性乾燥直接沉 積玻璃化之矽氧氟化物玻璃的氟含量在〇. 1至0.4%重量比 範圍内,其呈現出雷射照射引起之吸收以及提供雷射照射 耐久性,在延長照射後在157. 6nm處具有最小透射損耗。本 發明包含低於193nmVUV透射性玻璃光學遮罩基質作為157 nm波長之光石版印刷,其利用高純度乾燥直接沉積玻璃化 之砂氧氟化物玻璃,其中0H含量低於50ppm重量比,氫氣含 量低於lxlO17分子/立方公分以及氟含量在〇. 1至〇. 4重量 (請先閱讀背面之注意事項再本頁)Ultraviolet Transmitting Silicon Oxyfluride Lithography Glass' and U.S. Patent No. 60/271 135, filed on February 24, 2001, entitled "0xygen D〇ping 〇; f Silicon Oxyfluride Glass", and September 2000 The provisional patent of World Patent Organization No. WO 01/17919, filed on the 8th, is entitled "Pure Fused Silica, Furnace And Method '. These patents are incorporated herein by reference. Field of the Invention: Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs This invention relates to the light lithography method, and in particular to the light lithography printing glass for use in the light lithography system, which uses vacuum ultraviolet (VUV) below 193nm The wavelength is preferably lower than 175nm, and more preferably lower than 164nm, for example, a VUV projection light lithography system using a wavelength of 157nm is used. The present invention relates to a VUV transmission glass, which is transmissive at a wavelength below 193 nm. In particular, a light-shielding silicon oxyfluoride glass is suitable for use in a vacuum ultraviolet (VUV) wavelength region of 157 nm. Background of the invention: This paper size is applicable to China National Standards (CNS) A4 (210X 297 mm> 554260 Α7 Β7) 5. Description of the invention (: 2) Printed by the Consumer Cooperative of the Central Bureau of the Ministry of Economic Affairs, collimated optical element Highly transmissive materials are required. For smaller and smaller semiconducting ft. Gu needs 248 and 193 reading length, high-purity smelting stone Xixian has been shown to require a minimum transmission of 99% or better. Daily use below 193M1 The vacuum ultraviolet wavelength projection light lithographic printing system provides the advantage of achieving a smaller size. The system using a vacuum ultraviolet wavelength in the 157nm wavelength region has the potential to improve the collective circuit with a smaller size. Currently in the manufacturing of collective circuit semiconductor industry The light lithography system used has been developed towards shorter wavelengths of light, such as 248 and 193nm wavelengths, but the use of vacuum ultraviolet wavelengths below 193, such as 157nm, is blocked by the characteristics of vacuum ultraviolet wavelengths transmitted through the 157nm region through optical materials The slow progress of the semiconductor industry using VUV light below 175 such as 15711 {11 is due to The lack is caused by the economical manufacture of light-shielding blanks by optically transmissive materials. For the advantages of vacuum UV lithography in the 157 coffee region, such as the VUV frequency window of the emission spectrum of the excimer laser used in the production of collective lines, there is a mask. There is a need for mask hair embryos, which have beneficial optical characteristics such as good transmission properties below 164nm and 157nm, and can be economically manufactured. The present invention overcomes some of the problems of the prior art and provides economically high-quality improved mask hair Embryo and VUV transmitted light lithographic printing glass, which can be used to improve the production of collective circuits using vacuum ultraviolet wavelengths. Use of high-purity fused silica for light lithography originates from high-purity fused silica in a wide wavelength range from infrared to deep In the ultraviolet region, it is transmissive. In addition, high-purity silica exhibits very good chemical durability and dimensional stability. In European Patent No. 0636586A1, in order to apply the Chinese National Standard (CNS) A4 specification at 248nm, this paper standard ( 21〇χ297 公 楚) (Please read the note on the back and then this page) Teach 554260 A7 B7 3. Description of the invention (3) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs to a wavelength of 193nm is suitable as a mosquito-light ^ printing and printing-like masking substrate. High-purity fused silica produced by the direct flame method must contain 10π to 101 g molecules / cubic centimeter of a large amount of molecular hydrogen. Similarly, the Jp patent does not disclose that synthetic quartz glass is used as a light masking material, and its optical characteristics change due to spraying, plasma etching, or excimer irradiation. The material can The original conditions are restored by heat treating the glass in hydrogen. In particular, this document describes the effects of exposure of synthetic quartz to wavelengths of 248 and 193 nm. The effect of exposure to 248nm and 193nm wavelengths on fused silica is also explained in Densifi cat ion of Fused Silica under 193 nm excitation ", J. Opt. Soc. Am. B / Vol. 14, No. 7, pp. 1606 1615 (July 1997); and n193nm excimer -laser-induced densification of fused silica 'Optics Letters, Vol. 21, No. 24, pp. 1960-1962 (Dec. 5, 1996) by Allan et al. . ’We have previously revealed several effective methods to improve the optical properties of high-purity fused silica used as optical lenses in light lithography in the 248nm and 193nm wavelength regions. See, for example, U.S. Patent Nos. 5,616,159, 5668067, and 57359 21, the description of which is incorporated herein by reference. Therefore, the object of the present invention is to reveal the VUV transmissive direct deposition of vitrified siloxyfluoride glass for use at a VUV wavelength below 193nm, which wavelength is preferentially in the region of F2 excimer laser 157nm. Method for drying and directly depositing vitrified lithograph glass objects. Summary of the invention: In the present invention, we reveal that VUV transmissive dry direct-deposited glass (please read the precautions on the back side before ^^ this page) The size of the paper is applicable to China National Standard (CNS) A4 specification (210 & 297) (%) 554260 A7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (φ) Silicon oxyfluoride light lithographic printing glass is suitable as an optical element. It is used as a lens or preferentially as a VUV below 193nm. Wavelength optical masking matrix. In particular, the present invention directly deposits vitrified oxyfluoride glass products exhibiting advantages that are particularly suitable for use as light lithographic printing objects and near 157nm excimer laser wavelengths and wavelength regions below i93nm. The object of the present invention is achieved by direct deposition of vitrified synthetic silicon oxyfluoride glass using dry low-hydroxy-doped fluorine Si (Mf), which exhibits high transmittance in the vacuum ultraviolet (VUV) wavelength region and simultaneously exhibits Very good thermal and physical properties. The so-called "dry" means having a plutonium content of less than 50 ppm by weight, preferably dehydrogenation of less than 10111 by weight and most preferably less than 1 ppm by weight. Another aspect of the present invention The object of the project is to ensure that the directly deposited glassy siloxyfluoride glass does not substantially contain gas by drying. Another object of the present invention is to ensure that the molecular hydrogen content in the dry directly deposited glass is low. This refers to molecular hydrogen ( H2) content is less than lxio17 molecules / cubic centimeter. In the preferred embodiment of the present invention, the fluorine content of the VUV transmissive dry direct deposition vitrified silicon oxyfluoride glass is in the range of 0.1 to 0.4% by weight, which shows The absorption caused by the laser irradiation and the durability of the laser irradiation are provided, and the minimum transmission loss is at 157.6 nm after prolonged irradiation. The present invention includes a VUV transmission glass lower than 193 nm The glass optical mask substrate is used as a light lithograph with a wavelength of 157 nm. It uses high-purity drying to directly deposit vitrified sand oxyfluoride glass, where the content of 0H is less than 50ppm by weight, the content of hydrogen is less than 1xlO17 molecules / cubic centimeter, and fluorine. The content is from 0.1 to 0.4 (please read the precautions on the back before this page)
-5T» 礞 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐 554260 Α7 Β7 五、發明説明(7) 比範圍内。 本發明包含一種製造VUV透射性玻璃之矽氧氟化物玻 璃,其包含提供不含氫氣燃料之一氧化碳燃燒器;提供含 有加熱之直接沉積高溫爐;提供一氧化碳供應源以及氧氣 供應源至一氧化碳燃燒器以形成一氧化碳燃燒反應火焰, 提供乾燥玻璃沉積表面鄰近於火焰,供應Si—玻璃前身產物 原料以及F-玻璃前身產物原料至該一氧化碳燃燒器,其中 Si-玻璃前身產物原料以及玻璃前身產物原料在火焰中 反應為矽氧氟化物玻璃粉塵投射至玻璃沉積表面上,該粉 塵同時地直接地沉積出以及玻璃化為乾燥直接沉積玻璃化 之矽氧氟化物玻璃物體。 經濟部中夬榡半局員工消費会作衽印製 本發明包含乾燥直接沉積玻璃化之矽氧氟化物玻璃, 其實質上並不包含0H基,小於5xl016分子/cm3分子氫,氟化 物含量在0· 1至0.4%重量比範圍内。本發明包含乾燥直接 儿積玻璃化之石夕氧敗化物玻璃,其OH含量小於5ρρπι重量比, C1含量小於5ppm重量比,Η2含量小於1χ1〇π分子/cm3,以及 氟化物含量在0· 1至0.4%重量比範圍内,157nm内透射度至 少為85%/cm。本發明包含VUV圖案印刷方法,其包含下列步 驟:提供低於164nm輻射光源以製造VUV光子,提供乾燥直接 沉積玻璃化之石夕氧氣化物玻璃,其OH重量比小於5ppm, C1重 量比小於5ppm,氟化物含量<0· 5重量比,以及I57nm以及165 nm量測透射率至少為75%/5mm。圖索印刷方法包含透射νυν 光子通過乾燥直接沉積玻璃化之矽氧氟化物玻璃,利用νυν 光子形成圖案以及投射圖案至VUV輻射靈敏性印刷圖案上 本紙張尺度適用中國國家標準(CNS > Α4規格(210X 297公釐) 經濟部中央標準局員工消費合作社印製 554260 A7 B7 五、發明説明((> ) 。本發明包含乾燥直接沉積玻璃化νυν透射矽氧氟化物玻 璃,其0Η含量小於5ppm重量比,氟化物含量至少為〇. 1%重量 比,玻璃包含Si,0,及F,在暴露於2mJ/cm2-脈沖之157nm雷 射41· 5百萬脈沖後在157nm至175nm波長範圍内内部透射至 少為85%/cm以及165nm吸收小於0. 4(吸收單位/5刪)。 本發明包含低於193nmVUV透射玻璃光學遮罩基質作為 157nm波長之光石版印刷,該玻璃遮罩基質包含乾燥直接沉 積玻璃化之矽氧氟化物玻璃,其OH含量低於20ppm重量比, C1含量低於〇· 1%重量比,以及氟含量在〇. 〇1至7%重量比範 圍内。 本發明包含一種製造低於193nmVUV透射性光石版印刷 玻璃以透射157nm波長之方法,該方法包含提供不含氫氣燃 料之一氧化碳燃燒器;提供一氧化碳來源以及氧氣來源至 該一氧化碳燃燒器以形成一氧化碳反應火焰,提供直接玻 璃沉積表面靠近於火焰,供應Si-玻璃前身產物原料以及F -玻璃前身產物原料至一氧化碳燃燒器,其中Si-玻璃前身產 物原料以及F-玻璃前身產物原料在火焰中反應成為矽氧氟 化物玻璃粉塵投射於玻璃沉積表面,以及粉塵同時地直接 沉積出以及玻璃化為矽氧氟化物玻璃物體。 本發明包含一種製造均勻玻璃光石版印刷元件,該方 法包含提供不含氫氣燃料之一氧化碳燃燒器;提供一氧化 碳供應源以及氧氣供應源至一氧化碳燃燒器以形成一氧化 碳燃燒反應火焰,提供直接玻璃沉積表面鄰近於火焰,供應 Si -玻璃前身產物原料以及摻雜劑R—玻璃前身產物原料至 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-5T »礞 This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm 554260 A7 B7) 5. Description of the invention (7) The ratio range. The invention includes a silicon oxyfluoride glass for the production of VUV transmissive glass, It includes providing a carbon oxide burner containing no hydrogen fuel; providing a direct deposition high temperature furnace containing heating; providing a carbon monoxide supply source and an oxygen supply source to the carbon monoxide burner to form a carbon monoxide combustion reaction flame; providing a dry glass deposition surface adjacent to the flame, supplying Si—glass precursor product raw material and F-glass precursor product raw material to the carbon monoxide burner, wherein the Si-glass precursor product raw material and glass precursor product raw material react in a flame to form oxyfluoride glass dust onto the glass deposition surface, the Dust is simultaneously deposited directly and vitrified into a dry directly deposited vitrified silicon oxyfluoride glass object. The staff of the Central Bureau of Economic Affairs will print it for consumption. The present invention includes dry directly deposited vitrified siloxyfluoride. Glass, which does not substantially contain 0H groups, is small 5xl016 molecules / cm3 molecular hydrogen, and the fluoride content is in the range of 0.1 to 0.4% by weight. The present invention includes dry direct vitrified stone oxoxide glass, whose OH content is less than 5ρρπι weight ratio and C1 content is less than 5ppm weight ratio, Η2 content is less than 1x10π molecules / cm3, and fluoride content is in the range of 0.1 to 0.4% by weight, and the transmittance at 157nm is at least 85% / cm. The present invention includes a VUV pattern printing method, which It includes the following steps: providing a radiation source below 164nm to produce VUV photons, providing dry direct-deposited vitrified stone oxide glass, with an OH weight ratio of less than 5 ppm, a C1 weight ratio of less than 5 ppm, and a fluoride content < 0.5 weight Ratio, and the measured transmittance of I57nm and 165nm is at least 75% / 5mm. The graph printing method includes transmitting νυν photons by drying and directly depositing vitrified silicon oxyfluoride glass, using νυν photons to form a pattern, and projecting the pattern to VUV radiation The paper size on the sensitive printing pattern applies the Chinese national standard (CNS > Α4 size (210X 297 mm)) Printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 260 A7 B7 V. Description of the invention (>). The present invention includes dry direct deposition vitrified νυν transmission silicon oxyfluoride glass, the content of 0Η is less than 5ppm by weight, the content of fluoride is at least 0.1% by weight, glass Contains Si, 0, and F, after exposure to 21.5mJ / cm2-pulse of 157nm laser 41.5 million pulses, the internal transmission is at least 85% / cm in the wavelength range of 157nm to 175nm and the absorption at 165nm is less than 0.4 ( Absorptive unit / 5 deleted). The present invention comprises a lithographic printing of 157nm wavelength with an optical mask substrate of VUV transmission glass below 193nm. The glass mask substrate contains dry directly deposited vitrified siloxane glass with an OH content lower than 20 ppm by weight, C1 content is less than 0.1% by weight, and fluorine content is in the range of 0.01 to 7% by weight. The invention includes a method for manufacturing a UV-transmissive light lithographic printing glass below 193 nm to transmit a wavelength of 157 nm. The method includes providing a carbon monoxide burner containing no hydrogen fuel; providing a carbon monoxide source and an oxygen source to the carbon monoxide burner to form a carbon monoxide reaction flame. Provide a direct glass deposition surface close to the flame, and supply Si-glass precursor product raw materials and F-glass precursor product raw materials to a carbon monoxide burner, where the Si-glass precursor product raw materials and F-glass precursor product raw materials react to become silicon oxide in the flame. Fluoride glass dust is projected on the glass deposition surface, and the dust is simultaneously directly deposited and vitrified into a silicon fluoride glass object. The invention includes a method for manufacturing a uniform glass light lithographic printing element. The method comprises providing a carbon monoxide burner containing no hydrogen fuel; providing a carbon monoxide supply source and an oxygen supply source to the carbon monoxide burner to form a carbon monoxide combustion reaction flame, and providing direct glass deposition surface proximity. For the flame, supply Si-glass precursor product raw materials and dopant R-glass precursor product raw materials to this paper size applicable to China National Standard (CNS) A4 specifications (210X297 mm)
554260 A7 B7 五、發明説明(7) 一氧化碳燃燒器,其中Si-玻璃前身產物原料以及摻雜劑R-玻璃前身產物原料在火焰中反應成為乾燥摻雜R矽石玻璃 粉塵投射至玻璃沉積表面,該粉塵同時地沉積出以及玻璃 化為乾燥均勻摻雜R之矽石玻璃物體,以及直接地形成沉積 玻璃化之玻璃物體為均勻的玻璃光石版印刷元件。在製造 乾燥摻雜R矽石玻璃方法之優先實施例中,由F, Ti,Ge,B,P, 以及A1玻璃摻雜劑種類中選擇出玻璃摻雜劑。 本發明包含一種製造均勻玻璃光石版印刷元件之方法 ,該方法包含提供不含氫氣燃料之一氧化碳燃燒器;提供一 氧化碳供應源以及氧氣供應源至一氧化碳燃燒器以形成一 氧化被燃燒反應之火焰,提供直接玻璃沉積表面鄰近於火 焰,供應Si-玻璃前身產物原料至一氧化碳燃燒器,其中& -玻璃前身產物原料在火焰中反應成為乾燥高純度矽石玻璃 粉塵投射至玻璃沉積表面,該粉塵同時地沉積出以及玻璃 化為乾燥均勻摻雜R之矽石玻璃物體,以及直接地形成沉積 玻璃化之玻璃物體為均勻的玻璃光石版印刷元件。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再本頁) 製造低於193nmVUV透射矽氧氟化物玻璃之方法包含提 供不含氫氣燃料之燃燒器,優先地不含氫氣燃料之燃燒器 為一氧化碳燃燒器。該方法包含提供不含氫氣燃料之一氧 化碳燃料供應源以及氧氣供應源至燃燒器以形成一氧化碳 燃燒反應火焰,其包含於含有加熱之直接沉積高溫爐内。 提供直接玻璃沉積表面於高溫爐中鄰近於以及低於一氧化 石反燃燒器以及火絡。另外一種不含氫氣燃料之燃燒燃料包 含次氧化碳以及氧硫化碳。供應至燃燒器之一氧化碳以及 本紙張尺度適用中國國家標準(CNS > A4規格(210X297公釐〉 554260 A7 ___ B7 五、發明説明(f ) 氧氣供應源維持一氧化峻火焰,Si-玻璃前身產物原料以及 F-玻璃前身產物原料供應至該火焰。優先地^-玻璃前身 產物原料為不含氫氣例如為四氯化之石夕以及四異氰酸石夕 [Si(NC0)4]。 ' 依據本發明處理過程以及裝置製造出不含水份之矽石 玻璃。製造該不含水份熔融矽石玻璃之處理過程以及裝置 藉由消除在燃燒氣體中形成水份之可能。此在第一實施例 中藉由使用不含氫氣燃料例如一氧化碳(co),次氧化碳( G〇2),氧硫化碳(C0S)等達成。使用不含氫燃料將在燃燒 反應中使水份形成減為最低。依據優先實施例,需要使用 不含氫氣材料作為矽石之玻璃前身產物。最優先地,使用 不含氫原料以及不含氳燃料之組合。不含氫之玻璃前身產 物之範例包含碳化之矽(SiC),一氧化矽(Si0),矽之氮化物 (S^4),四溴化矽(SiBn),四氣化矽(siCh),四碘化矽( Sih),以及矽石(SiOO。亦可以使用Si(NC〇)4。 依據本發明,當使用例如一氧化碳作為燃料以及與氧 結合,剔產物,、有一氧化碳。該副產物非常容易處理,以及 並無水份由該處理反應過程產生。該反應由下列公式表示 出:CO +l/2〇2-> C〇2 經濟部中央標準局員工消費合作社印製 人們了解由一氧化碳產生熱量約為由天然氣(甲烷)產 生熱量四分之一。因而需要四倍燃料以產生相同的熱量。 不過,只需要0· 5莫耳氧氣以燃燒1莫耳⑺。因此,對於任一 種熱量需要相同體積之氧氣以產生相同的熱量。下列式子 顯不需要一氧化碳燃料以與先前技術處理過程所使用燃燒554260 A7 B7 V. Description of the invention (7) Carbon monoxide burner, in which the raw material of the Si-glass precursor product and the raw material of the dopant R-glass precursor product react in the flame to become dry doped R silica glass dust projected onto the glass deposition surface, The dust is simultaneously deposited and vitrified into a dry and uniformly doped silica glass object, and the directly formed deposited vitrified glass object is a uniform glazed lithographic printing element. In a preferred embodiment of the method for manufacturing a dry-doped R silica glass, a glass dopant is selected from the types of F, Ti, Ge, B, P, and A1 glass dopants. The invention includes a method for manufacturing a uniform glass lithographic printing element. The method comprises providing a carbon monoxide burner containing no hydrogen fuel; providing a carbon monoxide supply source and an oxygen supply source to the carbon monoxide burner to form a flame of a monoxide combustion reaction. The direct glass deposition surface is adjacent to the flame, and the Si-glass precursor product raw material is supplied to the carbon monoxide burner. The & -glass precursor product raw material reacts in the flame to become dry high-purity silica glass dust, which is projected onto the glass deposition surface. The dust is simultaneously Deposited and vitrified silica glass objects that are dry and uniformly doped with R, and directly formed deposited vitrified glass objects are homogeneous vitreous lithographic printing elements. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back of this page before this page). The method of manufacturing UV-transmissive silicon oxyfluoride glass below 193nmV includes providing a burner that does not contain hydrogen fuel, preferably hydrogen fuel. The burner is a carbon monoxide burner. The method includes providing a carbon dioxide fuel supply source containing no hydrogen fuel and an oxygen supply source to a burner to form a carbon monoxide combustion reaction flame, which is contained in a direct deposition high temperature furnace containing heating. A direct glass deposition surface is provided in the high temperature furnace adjacent to and below the monoxide anti-burner and flame. Another type of combustion fuel that does not contain hydrogen fuel contains carbon monoxide and carbon oxysulfide. One of the carbon oxides supplied to the burner and this paper size are in accordance with Chinese national standards (CNS > A4 specifications (210X297 mm> 554260 A7 ___ B7) V. Description of the invention (f) The oxygen supply source maintains the oxidizing flame, a precursor of Si-glass The raw material and the raw material of the F-glass precursor product are supplied to the flame. The raw material of the glass precursor product is preferably hydrogen-free, such as stone tetrachloride and tetraisocyanate [Si (NC0) 4]. 'Basis The processing process and the device of the present invention produce non-water-containing silica glass. The processing process and the device of manufacturing the non-water-containing molten silica glass eliminate the possibility of forming water in the combustion gas. This is implemented in the first implementation. This is achieved by using hydrogen-free fuels such as carbon monoxide (co), carbon monoxide (GO), carbon oxysulfide (COS), etc. The use of hydrogen-free fuels will minimize water formation during combustion reactions. .According to the preferred embodiment, it is necessary to use a hydrogen-free material as the glass precursor of silica. Most preferably, a combination of hydrogen-free raw materials and thorium-free fuel is used. The hydrogen-free glass precursor Examples include silicon carbide (SiC), silicon monoxide (Si0), silicon nitride (S ^ 4), silicon tetrabromide (SiBn), silicon tetrachloride (siCh), silicon tetraiodide (Sih) , And silica (SiOO. Si (NC〇) 4 can also be used. According to the present invention, when using, for example, carbon monoxide as a fuel and combined with oxygen, pick up the product, carbon monoxide. This by-product is very easy to handle, and is anhydrous The reaction is generated by this treatment reaction. The reaction is expressed by the following formula: CO + l / 2〇2-> C02 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs People understand that the heat generated by carbon monoxide is approximately from natural gas ( Methane) generates a quarter of the heat. Therefore four times the fuel is required to produce the same amount of heat. However, only 0.5 mol of oxygen is needed to burn 1 mol. Therefore, the same volume of oxygen is required for any kind of heat to produce Same heat. The following formula shows that carbon monoxide fuel is not required to burn with the prior art process
Μ 554260 A7 B7 ο 五、發明説明(?) 經濟部中央標準局員工消費合作社印製 一莫耳曱烷所需要熱量相匹配。 4CO+2〇2-> 4 C〇2 下列公式顯示先前技術副產物以及維持燃燒氧氣以燃 燒一莫耳甲烷。 CH4 + 2 〇2 -> 2M + C〇2 因而,由先前所說明,人們了解能夠製造出不含水份矽 石玻璃。 本發明提供一種製造玻璃化物體之方法。新穎的方法 包含數項步驟。第一,由燃燒器產生之熱量藉由點燃不含 氩氣燃料產生之火焰提供。依據本發明,火焰為熱量來源 。其次,玻璃前身產物流入火焰以產生含有矽石粉塵。最 後,含有矽石粉塵沉積在基質上以及同時地藉由火焰熱量 轉變(藉由火焰熱量)而形成玻璃化玻璃物體。在優先實施 例中,粉塵沉積在含有石夕石玻璃構件上,例如炼融石夕石盤上 。依據該方法,玻璃化玻璃物體含有非常低數量之水份。 ,積步驟優先地進行於高溫爐内,其包含沖洗氣體例如為 氮氣提供於其中之氮氣。該方法適合產生均勻的玻璃。 依據本發明,能夠使用不含氫燃料之一氧化碳燃燒器 。燃燒器包含使用煙霧通道以第一流量供應玻璃前身產物 ,以及燃料通道圍繞著煙霧通道,使用燃料通道以第一流量 二十倍之流量供應不含氫之燃料。燃燒器亦包含内部遮蔽 通道於燃料通道與使用來供應至少氧氣的煙霧通道之間。 燃燒器更進-步包含外側屏敝通道圍繞著燃料通道以加入 其他氣體。Μ 554260 A7 B7 ο 5. Description of the invention (?) The amount of heat required for the production of monomolane by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs matches. 4CO + 2〇2- > 4 Co2 The following formula shows the by-products of the prior art and sustains the combustion of oxygen to burn one mole of methane. CH4 + 2 〇2-> 2M + C02 Thus, from the foregoing description, it is known that it is possible to produce a moisture-free silica glass. The invention provides a method for manufacturing a vitrified object. The novel method involves several steps. First, the heat generated by the burner is provided by igniting a flame generated by argon-free fuel. According to the invention, the flame is a source of heat. Second, the glass precursor product flows into the flame to produce silica-containing dust. Finally, silica-containing dust is deposited on the substrate and simultaneously transformed by flame heat (by flame heat) to form vitrified glass objects. In a preferred embodiment, the dust is deposited on a glass element containing stone stone, such as a smelting stone stone plate. According to this method, vitrified glass objects contain a very low amount of moisture. The product step is preferably performed in a high-temperature furnace, which contains a purge gas such as nitrogen gas provided therein. This method is suitable for producing uniform glass. According to the present invention, a carbon oxide burner containing no hydrogen fuel can be used. The burner includes supplying a glass precursor product at a first flow rate using a smoke passage, and a fuel passage surrounding the smoke passage, and using a fuel passage to supply fuel containing no hydrogen at a flow rate twenty times the first flow rate. The burner also includes an internal shield channel between the fuel channel and a smoke channel used to supply at least oxygen. The burner goes one step further and includes an outer screen channel surrounding the fuel channel to add other gases.
(請先閱讀背面之注意事項再本頁) —裝 554260 A7 B7 五 發明説明(丨〇 ) 本發明其他特性以及優點將詳細地揭示於下列詳細說 明,熟知此技術者可立即地由說明了解部份或藉由實施本 發明詳細說明,申請專利範圍以及附圖而明瞭。 人們了解一般說明以及下列詳細說明為本發明之範例 ,以及在於提供概念或架構以明瞭申請專利範圍界定出之 本發明原理以及特性。附圖在於提供更進一步了解本發明 ,以及在此加入作為構成說明書之一部份。附圖顯示出本 發明不同的實施例,以及隨同說明作為解釋本發明之原理 以及運作。 詳細說明: 現在針對本發明優先實施例詳細說明,其範例顯示於 附圖中。 我們揭示出低於190nm之高透射性,特別是低於i75nm, 以及最優先地在A準分子雷射波長下在含有^〇2矽氧氟化 物玻璃中藉由將玻璃之0H或水份含量減為最低而提供輸出 中央波長約為157nm。特別地,我們揭示出低低氯而呈現 出高透射性之矽氧氟化物玻璃。 玻璃透射特性一般決定於玻璃組成份。在純矽石中, 經濟部中央標準局員工消費合作社印製 已顯示非常微量(ppm或更少)金屬污染物會對在紫外線區 域中之透射產生顯著的減小。我們證實除了金屬雜質外, 控制矽氧氟化物玻璃之VUV透射邊緣最重要變數包含水份 或0H含量,以及氣含量。特別地,我們發現0H含量越低透 射性越佳,同時氣含量越高,在VUV之157nm區域中之透射性 越低。除此,我們發現在玻璃中分子氫數量必需減為最低 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公釐) \1 554260 Α7 --- Β7 經濟部中央標率局員工消費合作社印製 五、發明説明U| ) 。優先地含有Si〇2矽氧氟化物玻璃具有至少〇. 5%重量比氯 。在另一優先實施例中,矽氧氟化物玻璃之氟含量在〇. 1至 0.4%重量比範圍内。 在優先貫施例使用2· 7微米玻璃紅外線透射之量測以 定量玻璃之OH含量。 本發明乾燥高純度直接沉積玻璃化之矽氧氟化物玻璃 的光石版印刷光學遮罩基質顯示於圖1-2中以及以參考數 字20表示。 如圖2所示,本發明製造光石版印刷圖案之光石版印刷 方法包含提供照明次系統以製造出以及導引<3〇〇nm紫外線 λ。優先地A<200nm,以及最優先地A<i93nm。該方法包 含提供遮罩次系統,其具有遮罩載台以及透射光石版印刷 遮罩22,其包含乾燥高純度直接沉積玻璃化之矽氧氟化物 玻璃晶片20具有光石版印刷圖案24。該方法包含提供投射 光學次系統以及提供λ幸昌射線靈敏之印刷次系統,其包含 輻射線靈敏性印刷介質26。如圖2所示,該方法更進一步包 含對準照明次系統,遮罩次系統,投射光學次系統,以及輻 射線靈敏性印刷次系統,以及照明遮罩22以輻射線Λ照射, 輻射線λ運行通過玻璃20使得玻璃晶片遮罩22之描繪出IC 光石版印刷圖案投射至介質26上。圖3顯示出遮罩22具有 描繪出1C光石版印刷圖案於直接沉積玻璃化之矽氧氟化物 玻璃基質20上。例如圖4所示1C光石版印刷圖案由遮罩22 利用輻射線λ透射通過玻璃20而形成,透射通過投射光學 元件以及使1C圖案投射於集體線路晶片介質26上如圖5所 (請先閱讀背面之注意事項再本頁)(Please read the precautions on the back first, then this page)-Installation 554260 A7 B7 Five invention description (丨 〇) Other features and advantages of the present invention will be disclosed in detail in the following detailed description, those who are familiar with this technology can immediately understand the department from the description The detailed description of the invention, the scope of patent application, and the drawings are made clear by implementing the present invention. It is understood that the general description and the following detailed description are examples of the invention, and are intended to provide concepts or frameworks to clarify the principles and characteristics of the invention as defined by the scope of the patent application. The drawings are intended to provide a further understanding of the invention, and are incorporated herein as part of the specification. The drawings illustrate various embodiments of the invention, and the accompanying description serves to explain the principles and operation of the invention. Detailed description: A detailed description will now be given of a preferred embodiment of the present invention, an example of which is shown in the accompanying drawings. We have revealed a high transmission below 190nm, especially below i75nm, and most preferentially at the A excimer laser wavelength in glass containing SiO2 fluoride by changing the 0H or water content of the glass Reduced to the minimum while providing an output with a central wavelength of approximately 157nm. In particular, we have revealed silicon oxyfluoride glass that exhibits low transmittance and low transmittance. Glass transmission characteristics are generally determined by the glass composition. In pure silica, printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs has shown that very small amounts (ppm or less) of metal contaminants can significantly reduce transmission in the UV region. We have confirmed that in addition to metallic impurities, the most important variables controlling the VUV transmission edge of silicon oxyfluoride glass include moisture or 0H content, and gas content. In particular, we found that the lower the 0H content, the better the transmission, and the higher the gas content, the lower the transmission in the 157nm region of VUV. In addition, we found that the amount of molecular hydrogen in the glass must be reduced to the minimum. This paper size applies to the Chinese National Standard (CNS) A4 (210X297 mm) \ 1 554260 Α7 --- Β7 Central Consumer Bureau of the Ministry of Economic Affairs Employee Consumer Cooperatives Printed 5. Description of invention U |). Preferably, the glass containing SiO2 has at least 0.5% by weight chlorine. In another preferred embodiment, the fluorine content of the silicon oxyfluoride glass is in the range of 0.1 to 0.4% by weight. In the preferred embodiment, a 2.7 micrometer glass infrared transmission measurement was used to quantify the OH content of the glass. The light lithographic printing optical mask substrate of the present invention for drying a high-purity direct-deposited vitrified siloxyfluoride glass is shown in Figs. 1-2 and indicated by reference numeral 20. As shown in FIG. 2, the light lithography method for manufacturing a light lithography pattern according to the present invention includes providing an illumination sub-system to manufacture and guide < 300 nm ultraviolet light λ. A < 200nm is preferred, and A < i93nm is most preferred. The method includes providing a mask sub-system having a mask stage and a transmitted-light lithographic mask 22 including a dry high-purity direct-deposited vitrified silicon oxyfluoride glass wafer 20 having a light-lithographic printing pattern 24. The method includes providing a projection optical sub-system and a lambda Xingchang ray-sensitive printing sub-system, which includes a radiation-sensitive printing medium 26. As shown in FIG. 2, the method further includes aligning the illumination sub-system, the mask sub-system, the projection optical sub-system, and the radiation sensitive printing sub-system, and the illumination mask 22 is irradiated with the radiation Λ, and the radiation λ Running through the glass 20 causes the IC wafer lithographic pattern depicted on the glass wafer mask 22 to be projected onto the medium 26. FIG. 3 shows that the mask 22 has a 1C light lithographic pattern on a directly deposited vitrified silicon oxyfluoride glass substrate 20. For example, the 1C light lithographic printing pattern shown in FIG. 4 is formed by the mask 22 transmitting through the glass 20 with radiation λ, transmitted through the projection optical element and the 1C pattern is projected on the collective circuit wafer medium 26 as shown in FIG. 5 (please read first (Notes on the back page)
、π 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) 554260 A7 B7 3 Ί1 五、發明説明(丨>) 經濟部中央標準局員工消費合作社印製 示。本發明光石版印刷方法包含以<193nm波長之VUV光子 形式透射光石版印刷圖案通過玻璃,其中輻射線λ光石版 印刷光線之衰減受到抑制。在優先實施例中,該方法包含 提供產生紫外線λ之Fz準分子雷射28,以及;I包含157nm之 雷射放射波長,如圖6所示。 在優先實施例中,低於193nm VUV透射玻璃光學遮罩基 作為157nm波長之光石版印刷,該基質為乾燥高純度直接沉 積玻璃化之矽氧氟化物玻璃,其〇H含量低於2〇ppm重量比, C1含量低於0· 1%重量比,以及氟含量在〇· 〇1至7%重量比範 圍内。 優先地乾燥高純度直接沉積玻璃化之矽氧氟化物玻璃 20氟含量在0· 01至2%重量比範圍内,優先地氟含量在〇.〇1 至0· 5%重量比範圍内,以及優先地氟含量在〇· 1至〇. 4%重量 比範圍内。優先地乾燥高純度直接沉積玻璃化之矽氧氟化 物玻璃20之C1含量$〇. 08%重量比,更優先地C1含量$〇. 〇6 %重量比,更優先地C1含量$〇. 04%重量比,更優先地C1含量 $0· 03%重量比,最優先地π含量$〇. 〇2%重量比。在優先 實施例中,乾燥高純度直接沉積玻璃化之矽氧氟化物玻璃 20之C1含量小於5ppm,更優先地C1含量低於lppm,以及最優 先地直接沉積玻璃化之矽氧氟化物玻璃為不含可感測出之 氣。 優先地乾燥高純度直接沉積玻璃化之矽氧氟化物玻璃 20之OH含量低於l〇ppm重量比,以及更優先地0[1含量低 ppm重量比。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公發) (請先閲讀背面之注意事項再填寫本頁) 訂 554260 A7 B7 五、發明説明(G) 優先地乾燥高純度直接沉積玻璃化之矽氧氟化物玻璃 氫含量低於1χ1〇π分子/立方公分。優先地乾燥高純度直 接沉積玻璃化之矽氧氟化物玻璃Fe含量低於〇. 0004%重量 比。優先地乾燥高純度直接沉積玻璃化之矽氧氟化物玻璃 Zr含量並不大於0.00004%重量比。 在優先實施例中,乾燥高純度直接沉積玻璃化之矽氧 氟化物玻璃20含有多個間隙〇2分子,優先地〇2濃度至少為 1015 〇2莫耳/cc,優先地-1016 〇2莫耳/cc,優先地$1〇20 〇2莫耳/cc,以及最優先在1〇16至1〇1〇 〇2莫耳/⑺範圍内。 在本發明優先實施例中,玻璃基質20為非單件退火玻 璃晶片,其中玻璃片20並不在其玻璃晶片基質實際形式之 狀態下加以退火。在優先實施例中玻璃為預型件實際狀態 下加以退火,該狀態不同於以及大於玻璃晶片玻璃基質片, 優先地玻璃退火為玻璃預型碟片32(圖7),被退火之玻璃預 製件實際尺寸相當地大於玻璃晶片2〇(非常大體積以及非 常長之最大尺寸;至少為二倍,優先地至少為三倍,更優先 地為四倍)。 經濟部中央標準局員工消費合作社印製 如圖1所示,光石版印刷光學遮罩毛胚玻璃基質2〇具有 最大尺寸長度為L。如圖7所示,直接沉積玻璃化之矽氧氟 化物玻璃預製件碟片32具有預製件碟狀物直徑為D以及預 製件碟狀物咼度為H,其中D>H。如圖7所示,優先直接沉積 玻璃化之矽氧氟化物玻璃預製件碟狀物32高度為H以及直 徑為D,直徑D位於預製件x—軸及預製件y_轴所界定出砂平 面上,X-軸以及y-軸垂直於預製件碟狀物高度H。碟狀物高 本紙張尺度適用中國國家標準(CNS〉A4規格(2丨〇><297公楚) 554260 A7 B7 五、發明説明(I中) 經濟部中央標準局員工消費合作社印製 二’子準於預製件碟狀物之2,。如圖8a—c處理流程側視 '所顯不,該方法包含觸賴件雜物32不含雜質區域 預製件不含雜質區域34包含不具有直徑大於谈米之雜 貝。如圖8a及8b所示,優先地本發明包含保持預製件碟狀 匆X-軸,y-軸,以及z—軸指向,同時由預製件碟狀物犯去除 ^含雜質區频以提供絲縣毛胚賴件36,其具有光 學遮罩毛胚賴件X—姉树雜件物X-軸,光學遮 罩毛胚預製件y-㈣雜預製件雜物y—軸,以及光學遮 罩毛胚預製件碟狀物2—軸。如圖8b,gG以及1所示,該方法 包含形成光學鮮麵侧成為光;5版印刷光學遮罩毛胚 …、〃、有敢長尺寸長度L。在本發明優先方法中,光石版 印刷光學遮罩毛胚2G厚度為τ,光石版印刷光學遮罩毛胚χ— 軸,光石版印刷光學遮罩毛胚y—軸,光石版印刷光學遮罩毛 胚z-軸對輪光石版印刷鱗遮罩毛胚χ—細及光石版印 刷光學遮罩毛胚y-軸對料光學遮罩毛胚雜件χ—抽以及 光學遮罩毛胚雜件y—轴。光石版印刷光學遮罩毛胚2〇之 最長尺寸長度L位於光學遮罩毛胚χ—軸以及y-軸所界定出 之平面xy中以及光石版印刷光學遮罩毛胚厚度為τ對準於 光石版印刷光學遮罩毛胚z-細及垂餘光學遮罩毛胚X— 軸以及y-軸以及厚度Τ小於[。優先地γ遠小於l,更優先 10TCL。 ,利用本發明方法直接沉積玻璃化之魏氟化物破璃預 ^件32具有平坦的幾何形狀,優先地為平坦碟狀物形狀與 高圓柱形形狀,其中ζ軸方向高度大於巧平面中底部尺寸、。 本紙張尺度適用中國國家標準(CNS )八4規格(7公釐), Π This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) 554260 A7 B7 3 发明 1 5. Description of invention (丨 >) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The light lithographic printing method of the present invention comprises transmitting a light lithographic printing pattern through glass in the form of a VUV photon having a wavelength of < 193 nm, wherein the attenuation of the ray ray lithographic printing light is suppressed. In a preferred embodiment, the method includes providing an Fz excimer laser 28 that generates ultraviolet λ, and I includes a laser emission wavelength of 157 nm, as shown in FIG. In the preferred embodiment, the optical mask base of the VUV transmission glass below 193nm is used as a light lithography with a wavelength of 157nm. The substrate is a dry, high-purity direct-deposition glassy siloxyfluoride glass with an OH content of less than 20 ppm. The weight ratio, the C1 content is less than 0.1% by weight, and the fluorine content is in the range of 0.001 to 7% by weight. Preferentially drying high-purity direct-deposited vitrified silicon oxyfluoride glass 20 with a fluorine content in the range of 0.01 to 2% by weight, preferably a fluorine content in the range of 0.01 to 0.5% by weight, and The fluorine content is preferably in the range of 0.1 to 0.4% by weight. The C1 content of the high-purity direct-deposited vitrified silicon oxyfluoride glass 20 is preferentially dried at a weight ratio of 0.08%, more preferably the C1 content is $ 0.06% by weight, and the C1 content is more preferentially at a value of 0.004 〇2% 重量 比。% weight ratio, more preferably C1 content $ 0. 03% weight ratio, most preferably π content $ 0.02% weight ratio. In a preferred embodiment, the C1 content of the dry, high-purity direct-deposited vitrified siloxane glass 20 is less than 5 ppm, more preferably the C1 content is less than 1 ppm, and the most preferred direct-deposited vitrified siloxane glass is Contains no detectable gas. Preferentially drying the high-purity direct-deposited vitrified siloxyfluoride glass 20 has an OH content of less than 10 ppm by weight, and more preferably 0 [1 content and low ppm by weight. This paper size applies to Chinese National Standard (CNS) A4 specifications (210X297) (Please read the precautions on the back before filling out this page) Order 554260 A7 B7 V. Description of the invention (G) Priority drying and high purity direct deposition vitrification The silicon oxyfluoride glass has a hydrogen content of less than 1x10π molecules / cm3. Preferentially drying the high-purity direct-deposited vitrified siloxane glass Fe content is less than 0.004% by weight. Preferentially drying the high-purity direct-deposited vitrified siloxyfluoride glass with a Zr content of not more than 0.00004% by weight. In a preferred embodiment, the dry, high-purity direct-deposited vitrified silicon oxyfluoride glass 20 contains a plurality of interstitial molecules, preferably with a concentration of at least 1015 mol / cc, and preferably -1016 mol. Ear / cc, preferentially $ 120,002 Moore / cc, and most preferably in the range of 1016 to 10,002 Moore / ⑺. In the preferred embodiment of the present invention, the glass substrate 20 is a non-single-piece annealed glass wafer, wherein the glass wafer 20 is not annealed in its actual form of the glass wafer substrate. In the preferred embodiment, the glass is annealed in the actual state of the preform. This state is different from and larger than the glass wafer glass substrate sheet. The glass is preferentially annealed to the glass preform disc 32 (Figure 7). The annealed glass preform The actual size is considerably larger than the glass wafer 20 (very large volume and very long maximum size; at least twice, preferably at least three times, and more preferably four times). Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs As shown in Figure 1, the optical lithographic printing optical mask rough glass substrate 20 has a maximum dimension length L. As shown in FIG. 7, the directly deposited vitrified silicon oxyfluoride glass preform disc 32 has a diameter of the preform disc D and a degree of the preform disc H, where D > H. As shown in FIG. 7, it is preferred to directly deposit vitrified silicon oxyfluoride glass preforms. The dish 32 has a height H and a diameter D, and the diameter D is located on the sand plane defined by the x-axis and the y_ axis of the preform. The X-axis and the y-axis are perpendicular to the height H of the preform dish. The paper size of the dish is applicable to the Chinese national standard (CNS> A4 specification (2 丨 〇 > < 297 Gongchu) 554260 A7 B7 5. Description of the invention (I in) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs As shown in the side view of the processing flow of the preform, as shown in Fig. 8a-c, the method includes the inclusions of the non-contaminant 32, the region containing no impurities, and the region 34 containing no impurities. The diameter of the shell is larger than that of rice. As shown in Figs. 8a and 8b, the present invention preferably includes keeping the preform dish-shaped X-axis, y-axis, and z-axis pointing, and simultaneously removed by the preform dish. ^ Contains impurity regions to provide silk county hair embryos 36, which have optical mask hair embryos X-sister tree X-axis, optical mask hair embryos preform y-doped prefabricated objects y-axis, and optical mask blank preform dish 2-axis. As shown in Figure 8b, gG and 1, the method includes forming an optical fresh side to become light; 5th edition printing optical mask blank ... 〃, there is a daring long size length L. In the preferred method of the present invention, the thickness of the optical mask hair embryo 2G of the light lithographic printing is τ, Lithographic printing optical mask hair embryo χ-axis, light lithography optical mask hair embryo y-axis, light lithographic printing optical mask hair embryo z-axis to round light lithography printing scale mask hair embryo χ-fine and light lithography Printing optical mask germ y-axis pairing Optical mask germ miscellaneous parts χ—drawing and optical mask germ miscellaneous parts y-axis. The longest dimension length L of optical mask germ 20 in optical lithography is located in the optical The mask germ is defined in the plane xy defined by the χ-axis and y-axis and the thickness of the lithography optical mask germ is τ aligned with the lithography optical mask germ z-thin and dangling optical mask The X-axis, y-axis, and thickness T of the embryo are smaller than [. Preferably, γ is much smaller than 1, and more preferably 10 TCL. The glassy Wei fluoride glass breaking preform 32 which is directly deposited by the method of the present invention has a flat geometric shape. , Preferably in the shape of a flat dish and a high cylindrical shape, in which the height in the ζ axis direction is larger than the size of the bottom of the plane. This paper size applies to the Chinese National Standard (CNS) 8.4 (7 mm).
五、發明説明(K 經濟部中央標準局員工消費合作社印製 554260 該平坦幾何形狀與高幾何形狀之預製件提供具有均勻光學 特性玻璃物體,其提供改良之光石版印刷特性。在優先實 施例中,提供直接沉積玻璃化玻璃預製件碟狀物32包含提 供具有最長尺寸直徑D之預製件碟狀物32,該直徑大於或等 於高度Η兩倍(D-2H),更優先地D-3H,及最優先地D-4H。 製造低於193nm VUV透射玻璃光學遮罩基質2〇之方法 包含製造直接沉積玻璃化之矽氧氟化物玻璃物體32。圖9 及圖10顯示出製造以及提供直接沉積玻璃化玻璃預製件碟 狀物32之方法。在優先實施例中,高純度^-玻璃前身產物 原料以氣體形式傳送經過傳送導管38到達一氧化碳轉化位 址燃燒器之一氧化碳燃燒火焰40於含有加熱直接沉積轉化 位址高溫爐42,該高溫爐將含有Si&F原料轉變為乾燥矽氧 氟化物玻璃粉塵44,其投射以及沉積在直接玻璃沉積表面 45上,其優先地包含於水平地方向旋轉收集杯狀物46中以 及粉塵44同時地直接地沉積玻璃化固結為高純度乾燥矽氧 氟化物玻璃物體48。優先地含有加熱直接沉積轉化位置高 溫爐42由鋁氧化物之耐火物體製造出,其已利用鹵素清除 污染物。包含杯狀物46之高溫爐42優先地由i素處理加以 清理之二氧化鋁耐火塊所構成,該耐火塊不含污染物以及 優先地在形成玻璃前藉由去除污染物而達成,例如利用鹵 素>月理/去除污染物氣體碳-氣化。優先地低污染氣泡化攀 土对火材料揭示於Kotacka等人之2000年9月8日公告PCT之 W001/17919專利,其專利名稱為pure Fused Silica,FurnaceV. Description of the Invention (Printed by the Consumer Cooperatives of the Central Standards Bureau, Ministry of Economic Affairs, K. 554260 The flat and high geometric preforms provide glass objects with uniform optical characteristics, which provide improved light lithographic printing characteristics. In the preferred embodiment Providing a pre-deposited vitrified glass preform dish 32 includes providing a preform dish 32 having the longest dimension diameter D, the diameter being greater than or equal to two times the height (D-2H), more preferably D-3H, And most preferably D-4H. The method of manufacturing the VUV transmissive glass optical mask substrate 20 below 193nm includes manufacturing a directly deposited vitrified silicon oxyfluoride glass object 32. Figures 9 and 10 show manufacturing and providing direct deposition Method for vitrified glass preform dish 32. In a preferred embodiment, the high-purity ^-glass precursor product raw material is conveyed as a gas through a transfer duct 38 to one of the carbon monoxide conversion site burners. The carbon oxide combustion flame 40 contains heat directly Deposition conversion site high temperature furnace 42, which converts Si & F-containing raw materials into dry silicon oxyfluoride glass dust 44, which is projected to Deposited on the direct glass deposition surface 45, which is preferentially contained in the horizontally rotating collection cup 46 and the dust 44 simultaneously and directly deposited vitrified and consolidated into a high-purity dry siloxyfluoride glass object 48. Preferentially The high-temperature furnace 42 containing a heated direct deposition conversion site is manufactured from refractory objects of aluminum oxide, which has been used to remove pollutants. The high-temperature furnace 42 including cup 46 is preferentially alumina refractory block cleaned by elemental treatment. As a result, the refractory block does not contain pollutants and is preferably achieved by removing the pollutants before forming glass, such as using halogens> monthly cleaning / removal of pollutant gases, carbon-gasification. Preferentially low-pollution gasification and climbing The anti-fire material was disclosed in Kotacka et al. PCT W001 / 17919 patent published on September 8, 2000. Its patent name is pure Fused Silica, Furnace
And Method,該專利在此加入作為參考之用。旋轉杯狀物 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐〉And Method, which is incorporated herein by reference. Rotating cups This paper is sized for China National Standard (CNS) A4 (210X297 mm)
\S\ S
554260 A7 _____ B7 五、發明説明([t ) 46為水平指向(平行Xy平面,垂直於2軸),優先地除了旋轉 杯狀物46,杯狀物46使用χ-y振盪工作台在xy平面中以即振 蘯移動圖案進行移動。如圖1〇所示,優先地抑制高溫爐42 内氣體以及氣流變化以及減為最低,使得製造出一致性玻 璃物體48。優先地直接沉積高溫爐揭示於1999年9月14曰554260 A7 _____ B7 V. Description of the invention ([t) 46 is horizontally oriented (parallel Xy plane, perpendicular to 2 axes), except for rotating cup 46, which preferably uses χ-y oscillation table in xy plane Move with the vibrating movement pattern. As shown in FIG. 10, the gas and gas flow in the high-temperature furnace 42 is preferentially suppressed and minimized, so that a uniform glass object 48 is manufactured. The preferential direct deposition high temperature furnace was revealed on September 14, 1999
Paul Schermerhorn之美國第5951730號專利中。在含有熱 量高溫爐42内之溫度保持為高溫以確保沉積出粉塵44固結 為玻璃物體,優先地高溫爐42操作溫度以及玻璃物體至少 為1500°C,更優先地至少為1600°C,及最優先地至少為1650 °C。 利用能夠使物體流動於優先實施例之高溫,杯狀物46 製造成具有傾斜壁板如圖10所示,其並不像圖9一樣陡以及 促使玻璃有益的移動以及流動。優先地收集杯狀物容器揭 示於John Maxon之1997年12月16日公告美國第5698484號 經濟部中央標準局員工消費合作社印製 專利,該專利在此加入作為參考之用。優先地,水平指向收 集杯狀物46具有收集杯狀物高度為CCH以及收集杯狀物直 徑為CCD,CCH>H以及CCD>D。所提供玻璃預製件碟狀物32包 含廢棄玻璃物體48之週邊,特別是與杯狀物46接觸之玻璃 物體48週邊,使得光學遮罩毛胚源自於玻璃物體48非外側 週邊部份。如圖9-10所示,玻璃物體48優先地包含於直接 沉積收集杯狀物46内。除了含有可流動玻璃形式,收集杯 狀物46保護玻璃物體避免外圍環境之變化以及影響以及最 優先地抑制杯狀物46中玻璃物體熱量損失,在其中杯狀物 46由耐火隔熱材料製造出,以及特別地減小玻璃物體48側 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨0X297公嫠) 五、發明説明(丨l7 ) 邊以及底部之熱量損失,該熱量利用高於玻璃物體48由一 氧化碳燃燒器40之一氧化碳火焰,及由輔助熱源例如一氧 化碳燃燒熱源燃燒器所產生,該燃燒器位於高於玻璃物體 48以及杯狀物46上方高溫爐轉化位置42中。在優先實施例 中,本發明包含連續性地沉積粉塵44於杯狀物46中,同時地 固結粉塵以直接沉積玻璃化熔融玻璃物體,同時維持堆積 物體溫度至少為1500°C。堆積玻璃物體48優先地保持在固 結玻璃化所需要之溫度(固結玻璃化溫度),使整個玻璃物 體各處溫度為均勻的。優先地該溫度藉由將整個製造過程 中由玻璃物體48散出之熱量損失減為最低。平坦的碟狀物 幾何形狀例如玻璃預製件碟狀物具有!)-211,優先地有助於 將玻璃物體48表面散出熱量損失減為最低。該平坦碟狀物 體優先地在含有隔熱杯狀物内,其將經由相對熱源之物體 側邊(物體底部48相對於高溫爐42頂部上熱源)以及物體側 邊之熱量損失減為最低。與長的高柱狀物之幾何形狀比較 ,該平坦碟狀物有益於抑制熱量通過底部以及側邊。如圖9 10所示,優先地粉塵44投射至沉積表面45以及沿著一氧化 石厌燃燒器40之一氧化碳火媳向下沉積路徑向下運行進入杯 經濟部中央標準局員工消費合作社印製 狀物46,以及旋轉杯狀物46在垂直於粉塵44向下沉積路徑 之旋轉平面中轉動。杯狀物46轉動平面平行於由預製件^ 狀物X-軸以及預製件碟狀物y—軸所界定出之平面。除了在 平行於xy平面旋轉平面中之轉動,杯狀物46以振盪移動地 平移於xy平行平面中,優先地使用J〇hn此\〇11之1997年12 、月9日美國第5696038號專利中所揭示之振盪旋轉樣式咳 554260 Α7 9 Β7 五、發明説明(|g) 專利名稱為Boule Oscillation Patterns In Methods of (請先閱讀背面之注意事項再填寫本頁}Paul Schermerhorn in US Patent No. 5,591,730. The temperature in the high-temperature furnace 42 containing heat is maintained at a high temperature to ensure that the deposited dust 44 is consolidated into a glass object, preferably the operating temperature of the high-temperature furnace 42 and the glass object is at least 1500 ° C, and more preferably at least 1600 ° C, and The highest priority is at least 1650 ° C. Utilizing the high temperature that allows objects to flow in the preferred embodiment, the cup 46 is manufactured with sloped walls as shown in Figure 10, which is not as steep as Figure 9 and promotes beneficial movement and flow of glass. Priority collection of cup containers was disclosed in John Maxon's December 16, 1997 Announcement No. 5898484 US Department of Economics Central Standards Bureau Staff Consumer Cooperative Cooperative Printed Patent, which is incorporated herein by reference. Preferably, the horizontally directed collection cup 46 has a collection cup height of CCH and a collection cup diameter of CCD, CCH > H and CCD &D; D. The provided glass preform dish 32 includes the periphery of the discarded glass object 48, especially the periphery of the glass object 48 that is in contact with the cup 46, so that the optical mask blank originates from the non-outer peripheral portion of the glass object 48. As shown in Figs. 9-10, the glass object 48 is preferably contained in the direct deposition collection cup 46. In addition to containing a flowable glass form, the collection cup 46 protects glass objects from changes and impacts in the external environment and most preferentially suppresses the heat loss of glass objects in the cup 46, where the cup 46 is made of refractory insulation , And especially reduce the size of the glass object on the 48 side. The paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 0X297). 5. Description of the invention (丨 17) The heat loss on the sides and bottom is higher than that of glass. The object 48 is generated by a carbon monoxide flame of one of the carbon monoxide burners 40 and by an auxiliary heat source such as a carbon monoxide combustion heat source burner, which is located in a high-temperature furnace conversion position 42 above the glass object 48 and the cup 46. In a preferred embodiment, the present invention comprises continuously depositing dust 44 in a cup 46 while consolidating the dust to directly deposit vitrified molten glass objects while maintaining the temperature of the stacked objects to be at least 1500 ° C. The stacked glass object 48 is preferably maintained at a temperature required for the consolidation vitrification (consolidation vitrification temperature) so that the temperature of the entire glass object is uniform. This temperature is preferably minimized by the heat loss from the glass object 48 throughout the manufacturing process. A flat dish geometry, such as a glass preform dish, has!)-211, which preferentially helps to minimize heat loss from the surface of the glass object 48. The flat dish-like object is preferentially contained in a heat-insulating cup, which minimizes the heat loss from the side of the object passing through the relatively heat source (the bottom of the object 48 relative to the heat source on the top of the high-temperature furnace 42) and the side of the object. Compared to the geometry of long tall pillars, this flat dish is good for inhibiting heat from passing through the bottom and sides. As shown in Figures 9 and 10, the dust 44 is preferentially projected onto the deposition surface 45 and runs downward along the deposition path of one of the monoxide anaerobic burners 40. It enters the cup of the Ministry of Economic Affairs' Central Standards Bureau's Consumer Cooperatives. The object 46 and the rotating cup 46 rotate in a rotation plane perpendicular to the downward deposition path of the dust 44. The rotation plane of the cup 46 is parallel to the plane defined by the X-axis of the preform and the y-axis of the preform dish. In addition to the rotation in the rotation plane parallel to the xy plane, the cup 46 is translationally moved in the xy parallel plane with an oscillating movement, and it is preferred to use the US Patent No. 5960038 of December 1997 and December 9, 1997. Oscillation rotation pattern disclosed in 554260 Α7 9 Β7 V. Description of the invention (| g) The patent name is Boule Oscillation Patterns In Methods of (Please read the precautions on the back before filling this page}
Producing Fused Silica Glass,該專利之說明在此加入 作為參考。 在優先實施例中,在形成玻璃物體48完成後以及製造 以及粉塵沉積結束時玻璃預製件碟狀物32在一氧化碳直接 沉積高溫爐42内退火。在製造光石版印刷光學遮罩毛胚2〇 方法中,玻璃在由預製件碟狀物32移除後並不進行退火,其 中光學遮罩毛胚預製件36及各別毛胚20並不加以退火。在 優先實施例中在大型實際尺寸之預製件碟狀物32以及物體 48中任何存在於玻璃中之雙折射性將被減小以及在預製件 碟狀物處理過程並不被減小。 、11 形成光學遮罩毛胚預製件36成為光石版印刷光學遮罩 毛胚20優先地包含由預製件36切割出一組多個光學遮罩毛 胚以及拋光切割下之光學遮罩毛胚。本發明更進一步包含 形成光石版印刷圖案於光學遮罩毛胚2〇上及透射低於193 nm波長輻射線通過光學遮罩毛胚。 經濟部中央標準局員工消費合作社印製 在實施本發明中,預製件碟狀物32直徑大於20英忖(5〇 公分)例如D約為3至5英呎(〇· 91至1· 5公尺)以及高度Η約為 6至10英吋(15至25公分),由其中製造出遮罩毛胚2〇具有最 長尺寸L<12英忖(30公分)使得毛胚尺寸約為1〇英叶χι〇英 吋(25公分χ25公分),9英吋χ9英吋(22. 8公分χ22· 8公分), 6英吋χ6英吋(15公分χΐ5公分),厚度τ約為1/4英吋(〇. 63公 分)。許多遮罩毛胚2〇能夠由較大預製件碟狀物32切割下, 大預製件碟狀物尺寸提供改良光石版印刷性能,特別是與Producing Fused Silica Glass, the description of which is incorporated herein by reference. In the preferred embodiment, the glass preform dish 32 is annealed in a carbon monoxide direct deposition high temperature furnace 42 after the glass object 48 is completed and at the end of manufacturing and dust deposition. In the method for manufacturing a light lithographic optical mask blank 20, the glass is not annealed after being removed from the preform plate 32, and the optical mask blank 36 and the individual blanks 20 are not treated. annealing. In the preferred embodiment, any birefringence present in the glass in the large-scale preform dish 32 and the object 48 will be reduced and the preform dish processing process will not be reduced. 11, 11 to form an optical mask blank preform 36 that becomes a light lithographic printing optical mask. The blank 20 preferably includes a set of multiple optical mask blanks cut from the preform 36 and a polished optical mask blank. The invention further comprises forming a light lithographic pattern on the optical mask hair embryo 20 and transmitting radiation with a wavelength below 193 nm through the optical mask hair embryo. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. In the practice of the present invention, the diameter of the preformed dish 32 is greater than 20 inches (50 cm). For example, D is about 3 to 5 feet (0.91 to 1.5 cm). Feet) and a height of about 6 to 10 inches (15 to 25 cm), from which the mask hair embryos 20 are produced. The longest dimension L < 12 inches (30 cm) makes the hair embryo size about 10 inches. Leaf χι0 inches (25 cm x 25 cm), 9 inches x 9 inches (22.8 cm x 22.8 cm), 6 inches x 6 inches (15 cm x 5 cm), thickness τ is about 1/4 inch Inches (0.63 cm). Many mask blanks 20 can be cut from larger preform plates 32. The large preform plate sizes provide improved light lithographic printing performance, especially with
554260 A7 五 、發明説明(叫 件柱狀物形成之光學遮罩基__ =予員製件尺寸舰光學鮮顧之尺寸。圖 '出^ ,胚20方法之處理過程流程圖。所提供預製;牛上 ::,10中’其利用一氧化碳轉變火焰直接沉積玻 k積處理過程以及烟振旋轉杯狀物46。光 預製郷之位置位於賴件碟狀物32上,優先地避 免利用碟狀物32中央。如圖η所示,光學遮罩毛胚預製件 祁之位置佈置優先地加以交錯以防止任何肉眼可查察之雜 經濟部中央標準局員工消費合作社印製554260 A7 V. Description of the invention (referred to as the optical mask base formed by the pillars __ = the size of the optical dimensions of the member. The figure shows the processing flow chart of the embryo 20 method. Prefabrication provided ; Niu Shang ::, 10 in the 'It uses carbon monoxide conversion flame to directly deposit the glass product processing process and smoke vibration rotating cup 46. The position of the light prefabricated puppet is located on the dish 32, and the use of the dish is preferably avoided. The center of the object 32. As shown in Figure η, the layout of the optical mask blank preform is preferentially staggered to prevent any miscellaneous inspection by the Central Consumers Bureau of the Ministry of Economic Affairs.
Li夠使用非交錯檢查板對準行列形成而並不需要檢視 預製件碟狀物32中可感測之雜質而使含有雜質之玻璃在後 續处理過私中被去棄。在光學遮罩毛胚預製件36位置布置 決定出後光學遮罩毛胚預製件塊36由預製件碟狀髓切割 出。代表性光學遮罩毛胚預製件塊36具有約為6·5χ6·5英 吋(16. 5公分χ16· 5公分)方形底部以及高度約為5_6英忖( 12公分至15公分)。切割下預製件塊36在三個側邊加以拋 光對,璃内部作檢查以及繪圖。内部檢查係使用三個拋光 側邊藉由透射光線通過兩個相對拋光側邊以辨識,標記以 及繪製任何在玻璃内部體積中大於丨微米尺寸之雜質。優 先地使用光學量測系統以掃描檢測雷射光束(此化掃描光 束)101經由塊狀物36體積以辨識雜質,其利用通過三個拋 光側邊觀察雜質,使得雜質位置能夠加以繪製以及標示作 為後續之去除。能夠使用例如Richard priesUey之1999 年12月9日申請美國第09/458561號專利方法以及系統,該 專利名稱為Automated System For Measurement Of An 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公釐) 554260 A7 _________B7 五、發明説明(W )Li can be formed using non-staggered inspection boards aligned in rows and columns without inspecting the detectable impurities in the preform dish 32, so that the glass containing the impurities is discarded in subsequent processing. The optical mask blank preform 36 is arranged at the position of the optical mask blank preform 36, and the optical mask blank preform block 36 is cut out from the preform dish-shaped pith. A representative optical mask blank preform block 36 has a square base of approximately 6.5x6.5 inches (16.5 cm x 16.5 cm) and a height of approximately 5-6 inches (12 cm to 15 cm). The preform block 36 is cut and polished on three sides, and the inside of the glass is inspected and drawn. The internal inspection uses three polished sides by transmitting light through two opposite polished sides for identification, marking, and mapping of any impurities larger than 丨 micron size in the interior volume of the glass. The optical measurement system is preferentially used to scan and detect the laser beam (this scanning beam) 101 to identify impurities through the volume of the block 36, which uses the three polished sides to observe the impurities, so that the position of the impurities can be plotted and marked as Subsequent removal. Able to use, for example, Richard PriesUey's method and system of US Patent No. 09/458561 on December 9, 1999, the patent name is Automated System For Measurement Of An This paper size is applicable to China National Standard (CNS) A4 specification (210X297) (Centi) 554260 A7 _________B7 V. Description of Invention (W)
Optical Property,該專利之說明在此加入作為參考。塊 狀物36再切割為毛胚板,使得被辨識出雜質加以去除。在 厚度約為G· 4-0· 5英时(H· 3公分)切割毛胚板四週之雜質 被切割下。切割毛胚板再利用化學機械修整劑預先加以磨 光,將疊加部份平坦化,平板平坦拋光以及邊緣拋光以提供 預先修整遮罩毛胚。量測預先修整遮罩毛胚作為光學元件 。在另外一個實施例中玻璃光學元件能夠以塊狀形式加以 量測如同雜質檢驗所作。能夠使用例如Richard PHestley 之1999年12月9日申請美國第09/458561號專利方法以及系 統作為光學量測,該專利名稱為Automated System F〇rOptical Property, the description of which is incorporated herein by reference. The lumps 36 are cut into rough boards so that impurities can be identified and removed. When the thickness is about G · 4-0 · 5 inches (H · 3 cm), the impurities around the cutting blank are cut off. The cutting blank board is pre-polished with a chemical mechanical dressing agent to flatten the superimposed part, the flat plate is polished flat, and the edges are polished to provide a pre-trimmed mask blank. Measure the pre-masked mask blank as an optical element. In another embodiment, the glass optical element can be measured in the form of a block like an impurity inspection. It is possible to use, for example, Richard PHestley's patent method and system of US Patent No. 09/458561 dated December 9, 1999, which is named Automated System For
Measurement Of An Optical Property,該專利之說明在 此加入作為參考。預先修整之遮罩毛胚再作最終修整以提 供修整玻璃基質光學遮罩毛胚2〇。最終修整優先地包含化 學機械拋光至超拋光小於5埃修整以及平坦度,加以清理以 及包裝以加入至遮罩22。 如圖12所示,優先地為了由乾燥co火焰得到充份熱量, 經濟部中央標率局員工消費合作社印製 不含氫氣C0燃料126以及玻璃原料前身產物124優先地以預 先決定流量比供應。特別地,為了產生充份的熱量,燃料流 量與玻璃前身產物124流量之比值應該大於20:1。此能夠 藉由燃燒器125内適當大小之各種通道達成。一項優先地 燃燒器顯示於圖13中。C0燃燒器作為燃燒不含氫氣應該表 示為’’乾燥燃燒器”。乾燥C0燃燒器125包含中央煙霧管件 68,其形成為細長管件,以及使用來供應氣體玻璃原料前身 產物。優先地,圍繞著煙霧管件68為内側屏敝通道74,其使 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公釐) 13 554260 A7 ___— —__B7 五、發明説明(W ) 用來運运氧氣。轉峨之氧氣雜料與維_燒氣體比 值為2:1地供應。圍繞著煙霧管件⑽以及内部屏敝%為燃 料通道70,其個來運敎量不錢之⑺燃料 。雖然並不 確貫地顯不出比例,人們了解燃料通道7〇之斷面積遠大於 煙霧官件68之斷_。由於_氧秘在燃燒時含有較少熱 量,與甲烷比較將需要較大流量。此能夠加以設計使得玻 璃刖身產物124能夠以第一流量供應至燃燒器丨25之中央煙 霧通道68以及不含氫之燃料126能夠以第一流量之2〇倍流 ϊ供應,因而產生充份熱量將前身產物氧化。燃燒器125能 夠包含多個輸入端埠作為維持不含氫氣燃料126以及維持 燃燒之氧氣21因而能夠在環狀通道中提供更加均勻的流量 分佈。 在本發明另外一個實施例中能夠加入氟。在本發明中 存在數種實現之方法。第一,氟能夠包含於前身產物中,例 如使用氯氟矽烷作為前身產物124。在該方式中,前身產物 124以氣體供應至煙霧管件⑽以及藉由⑺火焰加以氧化因 而產生摻雜氟之粉塵。可加以變化,一些燃料或氧能夠以 不含氫之燃料供應。 經濟部中央標準局員工消費合作社印製 第二種加入氟之方法為藉由流動氟或含氟化合物例如 CF\ (¾ SF6, NF3, SiF4或其混合物於氣體原料形式進 入燃燒器内所包含屏敝内。圖14顯示出能夠使用來製造出 砂^氣化物粉塵燃燒器125a中。氟或含有氟之原料化合物 以氣體形式供應至外側屏敝通道72圍繞著燃料通道70。能 夠使用水冷卻護套圍繞著燃料通道。一氧化碳燃燒器優先 本紙張尺度適> Α4_( 21()χ2ϋ^ 23 554260 A7 B7 五、發明説明(27/ ) 實施例具有中央管件68,其使用來提供不氫之玻璃前身產 物進入火焰區域,中央管件位於沿著燃燒器125,125a中心 軸(圖13-14);内部屏敝單元74使用來提供氧氣進入火焰, 内側屏敝單元徑向地偏離燃燒器中心軸,燃料單元7〇徑向 地偏離燃燒器中心軸以及使用來提供不含氫之燃料;外側 屏敝單元72使用來提供含氟氣體以覆蓋火焰,外側屏敝區 域徑向地偏離燃燒器中心軸以及放置於内側屏敝單元以及 燃料單元之外側,燃燒器使用來製造不含水份的摻雜氟之 矽石。 依據圖12所顯示實施例中,能夠使用不含氫之燃料以 製造玻璃物體,例如為玻璃86碟狀物。含;&夕之玻璃前身產 物分子在CO火焰128中反應以形成粉塵顆粒。這些顆粒wo 沉積於物體132之熱的直接沉積表面,在該處顆粒固結為非 常黏滯性流體(沉積以及同時玻璃化),其在後面冷卻為固 體狀態。 經濟部中夬標隼局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 本發明另外一項實施例為提供一種製造乾燥玻璃化玻 璃物體之方法。該方法優先地包含下列步驟:由燃燒器125 產生熱量,其具有由點燃不含氫之燃料126而產生,不含氫 之燃料火焰128為熱置來源,將玻璃前身產物124流入火焰 128以製造出含有石夕石之粉塵130,以及沉積含有石夕石粉塵 於沉積表面基質132上以及同時地將固結粉塵玻璃化以形 成玻璃化玻璃物體86。在優先地實施例中,粉塵沉積在基 質132上,該基質本身為含矽石之玻璃構件,以及最優先地 乾燥玻璃碟狀物。藉由使用不含氫之燃料,玻璃化玻璃物 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公楚) 554260 A7 B7 五、發明説明(y ) 體86含有水份(OH)數量小於數ppm。在所顯示實施例中,沉 積步驟在含有加熱高溫爐槽89内進行。優先地,清除氣體 例如為氮氣提供於槽内而提供不含水份之環境。通常,需 要提供加壓氣體於槽89中,該壓力大於槽外之大氣壓力。 在優先實施例中,提供一氧化碳供應源至一氧化碳燃 燒器以形成一氧化碳燃燒反應火焰包含提供高純度一氧化 碳供應氣體以及通過高純度一氧化碳供應氣體經由串連c〇 淨化過濾器300位於一氧化碳燃燒器上游。位於一氧化碳 燃燒器上游之串連C0淨化過濾器由高純度一氧化碳去除水 份,鐵,以及污染物金屬而傳送至燃燒器以確保高純度火焰 以及由其中產生南純度玻璃。C0淨化過滤器例如由从丨11 ip〇reMeasurement of An Optical Property, the description of which is incorporated herein by reference. The pre-trimmed mask blanks are then trimmed to provide trimmed glass matrix optical mask blanks. The final dressing preferably includes chemical mechanical polishing to ultra-polishing less than 5 angstrom dressing and flatness, cleaning and packaging for addition to the mask 22. As shown in FIG. 12, in order to obtain sufficient heat from the dried co flames, printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, the hydrogen-free CO fuel 126 and the glass raw material precursor product 124 are preferentially supplied at a predetermined flow rate. In particular, in order to generate sufficient heat, the ratio of the fuel flow to the flow of the glass precursor 124 should be greater than 20: 1. This can be achieved by various channels of appropriate size in the burner 125. One priority burner is shown in Figure 13. The CO burner as a combustion-free hydrogen should be expressed as a "dry burner". The dry CO burner 125 contains a central smoke tube 68 formed as an elongated tube and a precursor product used to supply the gas glass raw material. Preferentially, surrounding The smoke pipe 68 is the inner screen channel 74, which makes the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 13 554260 A7 ___ — —__ B7 5. Description of the invention (W) is used to transport oxygen. The ratio of oxygen miscellaneous material to gas content is 2: 1. Around the smoke pipe and the internal screen,% is the fuel channel 70, which is used to transport a large amount of plutonium fuel. Although not sure Consistently not showing the proportion, it is known that the cross-sectional area of the fuel passage 70 is much larger than the smoke official piece 68. Since the oxygen secret contains less heat during combustion, it will require a larger flow rate compared to methane. This can be increased. The design enables the glass body product 124 to be supplied to the burner at the first flow rate, the central smoke channel 68 and the non-hydrogen-containing fuel 126 to be supplied at 20 times the flow rate of the first flow rate, thereby generating sufficient The precursor product is oxidized. The burner 125 can include multiple input ports for maintaining hydrogen-free fuel 126 and oxygen 21 for maintaining combustion, thereby providing a more uniform flow distribution in the annular channel. In another embodiment of the present invention Fluorine can be added to the solution. There are several ways to achieve this in the present invention. First, fluorine can be included in the precursor product, such as using chlorofluorosilane as the precursor product 124. In this manner, the precursor product 124 is supplied to the smoke as a gas. Pipe fittings are oxidized by ⑺ flames to produce fluorine-doped dust. Variations can be made, and some fuels or oxygen can be supplied as hydrogen-free fuel. The Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs prints the second type of fluorine-added The method is by flowing fluorine or a fluorine-containing compound such as CF \ (¾SF6, NF3, SiF4 or a mixture thereof in the form of a gaseous raw material into the screen contained in the burner. Figure 14 shows that it can be used to produce sand gas. In the dust burner 125a, fluorine or a fluorine-containing raw material compound is supplied as a gas to the outer shield channel 72 surrounding the fuel channel 70. Water cooling jacket can be used to surround the fuel channel. Carbon monoxide burner is preferred. Paper size> A4_ (21 () χ2ϋ ^ 23 554260 A7 B7 V. Description of the invention (27 /) The embodiment has a central pipe 68, which Used to provide non-hydrogen glass precursor products into the flame area, the central tube is located along the central axis of the burner 125, 125a (Figure 13-14); the inner screen unit 74 is used to provide oxygen into the flame, and the inner screen unit is radially Off the central axis of the burner, the fuel unit 70 is radially off the central axis of the burner and is used to provide hydrogen-free fuel; the outer screen unit 72 is used to provide fluorine-containing gas to cover the flame, and the outer screen area is radially Off the burner's central axis and placed outside the inner panel unit and fuel unit, the burner is used to make moisture-free, fluorine-doped silica. According to the embodiment shown in FIG. 12, a glass object, such as a glass 86 dish, can be manufactured using a fuel containing no hydrogen. The molecules of the glass precursor product containing & eve react in a CO flame 128 to form dust particles. These particles wo are deposited on the hot direct deposition surface of the object 132, where they consolidate into a very viscous fluid (deposition and simultaneous vitrification), which is subsequently cooled to a solid state. Printed by the Consumers' Cooperative of the China Standards Bureau of the Ministry of Economic Affairs (please read the notes on the back before filling this page) Another embodiment of the present invention is to provide a method for manufacturing dry vitrified glass objects. The method preferably includes the following steps: the heat generated by the burner 125 has the ignition generated by igniting the hydrogen-free fuel 126, the hydrogen-free fuel flame 128 is a heat source, and the glass precursor product 124 is flowed into the flame 128 to manufacture The dust 130 containing the stone evening stone is deposited, and the dust containing the stone evening stone is deposited on the deposition surface substrate 132 and the consolidated dust is vitrified to form a vitrified glass object 86 at the same time. In the preferred embodiment, dust is deposited on a substrate 132, which itself is a silica-containing glass member, and most preferably a glass dish. By using hydrogen-free fuel, the glass paper material is in accordance with China National Standards (CNS) A4 (210X297) Chu 554260 A7 B7 5. Description of the invention (y) The body 86 contains water (OH) Less than a few ppm. In the embodiment shown, the deposition step is performed in a furnace 89 containing a heated high temperature. Preferably, the purge gas is provided in the tank, for example, with a moisture-free environment. Generally, it is necessary to provide pressurized gas in the tank 89, the pressure being greater than the atmospheric pressure outside the tank. In a preferred embodiment, providing a carbon monoxide supply source to a carbon monoxide burner to form a carbon monoxide combustion reaction flame includes providing a high-purity carbon monoxide supply gas and passing the high-purity carbon monoxide supply gas through a series of CO purification filters 300 located upstream of the carbon monoxide burner. A series of CO purification filters located upstream of the carbon monoxide burner removes water, iron, and pollutant metals from the high-purity carbon monoxide and transfers it to the burner to ensure a high-purity flame and produce South-purity glass from it. C0 purification filter for example from 丨 11 ip〇re
Corporation生產之Waferpure Micro/Mini-XL/MegalineWaferpure Micro / Mini-XL / Megaline by Corporation
Gas Purifiers品牌之CO淨化過濾器為適當CO淨化過濾器 。優先地高純度一氧化碳供應氣體為至少99. 3°/。純度CO。 經濟部中央標準局員工消費合作社印製 製造低於193nm VUV透射玻璃光學遮罩基質毛胚作為 157nm波長之光石版印刷的方法包含提供不含氫之一氧化 碳燃燒器;提供含有加熱直接沉積高溫爐;提供一氧化碳供 應源以及氧氣供應源至一氧化;5炭燃燒器以形成一氧化碳反 應火焰,提供直接玻璃沉積表面鄰近於C0火焰,供應Si-玻 璃前身產物原料以及F-玻璃前身產物原料至一氧化碳燃燒 器,其中在C0火焰中Si-玻璃前身產物以及F-玻璃前身產物 原料反應為矽氧氟化物玻璃粉塵投射於玻璃沉積表面,以 及粉塵同時地直接地沉積出以及玻璃化為矽氧氟化物玻璃 物體。該方法包含形成直接地沉積玻璃化之矽氧氟化物玻 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X,297公釐) 554260 A7 —-------—____B7^ 五、發明説明(νρ) 璃物體為光學遮罩毛胚。優先地供應Si-玻璃前身產物原 料包含供應不含氯Si-玻璃前身產物原料,其中直接沉積出 ,璃化之矽氧氟化物玻璃為不含氣(優先&cl<lppm)矽氧 氟化物玻璃以及該玻璃物體形成為不含氯之矽氧氟化物玻 璃光學遮罩毛胚。優先地,供應si-_前敍物原料包含 供應不含氫之Si-玻璃前身產物原料,其中直接沉積玻璃化 之=氧氟化物玻璃為乾燥矽氧氟化物玻璃,其0H濃度<10ppm 重量比,以及玻璃物體形成為乾燥矽氧氟化物玻璃光學遮 罩毛胚之0H濃度<10ppm重量比。最優先實施例中,不含氣 不含氫之Si-玻璃前身產物原料為四氰酸矽。供應F—玻璃 原料優先地包含供應預先決定?-玻璃前身產物原料流量, 其中直接沉積玻璃化之矽氧氟化物玻璃之氟濃度重量比在 〇· 01至7%重量比範圍内,更優先地在〇 〇1至2%重量比範圍 内,最優先地在0.01至0.5%重量比範圍内。優先地提供氧 氣供應包含提供預先決定〇2供應流,其中該直接沉積玻璃 化之;e夕氧氟化物玻璃含有Ο%優先地分子〇2濃度至少為1〇15 〇2莫耳/cc。 經濟部中央標率局員工消費合作社印製 提供含有加熱直接沉積高溫爐優先地包含清理過二氧 化鋁耐火塊以及組合該函素處理清理過二氧化鋁耐火塊以 形成高溫爐,最優先地耐火塊由二氧化鋁所構成。含有加 熱直接沉積高溫爐由礬土耐火材料所構成,其預先暴露於 反應性含有函素氣體以進行反應,以及因而清理污染金屬 之耐火材料。優先地含有頂部以及相鄰於c〇燃燒器之高溫 爐由二氧化鋁所構成,其頂部覆蓋固結玻璃物體。 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨0χ 297公釐) 554260 A7 B7 五、發明説明 優先地,由二氧化鋁所構成之高溫爐杯狀物含有固結 玻璃物體。優先地,二氧化鋁耐火塊暴露於含有反應性鹵 素之清理處理氣體。優先地,二氧化鋁耐火塊為多孔塊,其 孔隙率在25-70%範圍内,優先地整體密度<3. 9公克/cc,以 及更優先地一氧化紹耐火材料整體密度—1· 2公克/cm3。 經濟部中央標準局員工消費合作衽印製 本發明包含一種製造低於193nm VUV透射性光石版印 刷玻璃以透射157nm波長。該方法包含提供不含氫燃料之 一氧化碳燃燒器;提供一氧化碳供應源以及氧氣供應源至 一氧化碳燃燒器以形成一氧化碳燃燒反應火焰,提供直接 玻璃沉積表面緊鄰於火焰,供應Si_玻璃前身產物原料以及 F-玻璃前身產物原料至一氧化碳燃燒器,其中Si—玻璃前身 產物原料以及F-玻璃前身產物原料在火焰中反應為矽氧氟 化物玻璃粉塵投射至玻璃沉積表面,以及該粉塵同時地直 接地沉積出以及玻璃化為矽氧氟化物玻璃物體。優先地, 供應Si-玻璃前身產物原料包含供應不含氣&—玻璃前身產 物原料,其中直接地沉積出玻璃化之矽氧氟化物玻璃為不含 氯(Cklppm)之矽氧氟化物玻璃。優先地供應&-玻璃前身 產物原料包含供應不含氫Si_玻璃前身產物原料,其中直接 地沉積出玻璃化之矽氧氟化物玻璃為乾燥矽氧氟化物玻璃 ,其OH濃度重量比<i〇ppm。優先地供應Si-玻璃前身產物原 料包含供應不含氯不含氫之Si_玻璃前身產物原料,其中直 接>儿積玻璃化之矽氧氟化物玻璃為乾燥不含氣之矽氧氟化 ,玻璃,其〇H濃度重量比<1〇ppm,最優先地其中不含氣不含 氫Si-玻璃前身產物原料為四氰酸石夕。供應ρ_玻璃前身產Gas Purifiers CO purification filters are suitable CO purification filters. 3 ° /。 Preferably the high purity carbon monoxide supply gas is at least 99.3 ° /. Purity CO. The method of printing and manufacturing sub-193nm VUV transmission glass optical mask substrate blanks as light lithographs with a wavelength of 157nm by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economics includes providing a carbon oxide burner that does not contain hydrogen; providing a high temperature furnace containing direct deposition; Provide carbon monoxide and oxygen supply to monoxide; 5 carbon burner to form carbon monoxide reaction flame, provide direct glass deposition surface adjacent to CO flame, supply Si-glass precursor product raw material and F-glass precursor product raw material to carbon monoxide burner In the CO flame, the raw materials of the Si-glass precursor and the F-glass precursor are reacted as silicon fluoride glass dust, which is projected on the glass deposition surface, and the dust is simultaneously deposited directly and vitrified into the silicon oxide fluoride glass object. . The method includes the formation of directly deposited vitrified silicon oxyfluoride glass paper. The size of the paper is applicable to China National Standard (CNS) A4 (210X, 297 mm) 554260 A7 —-------—____ B7 ^ V. DESCRIPTION OF THE INVENTION (νρ) The glass object is an optical mask blank. Priority supply of Si-glass precursor product raw materials includes supply of chlorine-free Si-glass precursor product raw materials, which are directly deposited, and the vitrified silicon oxyfluoride glass is gas-free (preferential & cl < lppm) silicon oxyfluoride The glass and the glass object are formed into a chlorine-free silicon oxyfluoride glass optical mask blank. Preferably, the supply of the si-_precursor raw material includes the supply of the raw material of the Si-glass precursor product containing no hydrogen, in which the directly deposited vitrified = oxyfluoride glass is a dry silicon oxyfluoride glass whose 0H concentration < 10ppm weight Ratio, and the 0H concentration < 10 ppm weight ratio of the glass object formed as a dry silica glass optical mask blank. In the most preferred embodiment, the raw material of the Si-glass precursor product containing no gas and no hydrogen is silicon tetracyanate. Supply F—Glass raw materials preferentially include the supply of raw materials that are determined in advance.—The glass precursor product raw material flow, in which the fluorine concentration weight ratio of directly deposited vitrified silicon oxyfluoride glass is in the range of 0.01 to 7% by weight, more preferentially. In the range of 0.001 to 2% by weight, most preferably in the range of 0.01 to 0.5% by weight. Prioritizing the supply of oxygen includes providing a predetermined supply flow of 02, where the directly deposited vitrified glass is contained; preferably, the oxygen oxyfluoride glass contains 0% of molecules with a concentration of at least 1015 mol / cc. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, which includes heating and direct deposition of high-temperature furnaces, which preferentially include the cleaned alumina refractory blocks and the combination of this function to process and clean the alumina refractory blocks to form high-temperature furnaces, with the highest priority for refractory The block is made of alumina. The high-temperature direct-deposition furnace containing heating is composed of alumina refractory material, which is previously exposed to a reactive fungus-containing gas for reaction, and thus cleans refractory materials that contaminate metals. The high-temperature furnace, which preferably contains the top and adjacent to the co burner, is composed of alumina, and its top is covered with a consolidated glass object. This paper size applies Chinese National Standard (CNS) A4 specification (2 丨 0χ 297 mm) 554260 A7 B7 V. Description of the invention Preferentially, the high-temperature furnace cup made of alumina contains solidified glass objects. Preferably, the alumina refractory block is exposed to a cleaning process gas containing a reactive halogen. Preferentially, the alumina refractory block is a porous block with a porosity in the range of 25-70%, preferentially the overall density < 3.9 g / cc, and more preferably the overall density of the refractory mono-oxide refractory—1 · 2 g / cm3. Printed by the Consumer Co-operation of the Central Bureau of Standards of the Ministry of Economics The present invention includes the production of a lithographic printing glass with VUV transmission light below 193 nm to transmit a wavelength of 157 nm. The method includes providing a carbon monoxide burner containing no hydrogen fuel; providing a carbon monoxide supply source and an oxygen supply source to the carbon monoxide burner to form a carbon monoxide combustion reaction flame, providing a direct glass deposition surface adjacent to the flame, supplying Si_glass precursor product raw materials, and F -Glass precursor product raw material to carbon monoxide burner, in which Si-glass precursor product raw material and F-glass precursor product raw material react in a flame into siloxane fluoride glass dust projected onto the glass deposition surface, and the dust is simultaneously deposited directly And vitrified glass objects. Preferably, the supply of Si-glass precursor product raw materials includes the supply of gas-free & glass precursor product raw materials, in which the vitrified siloxyfluoride glass is directly deposited as chlorine-free (Cklppm) siloxyfluoride glass. Preferential supply &-glass precursor product raw material includes supply of hydrogen-free Si_ glass precursor product raw material, in which vitrified siloxyfluoride glass is directly deposited as dry siloxyfluoride glass, and its OH concentration weight ratio < 10 ppm. Priority supply of Si-glass precursor product raw materials includes supply of chlorine-free and hydrogen-free Si_glass precursor product raw materials, of which direct > child glass vitrified silicon oxyfluoride glass is dry and gas-free silicon oxyfluoride, For glass, its OH concentration-to-weight ratio < 10 ppm, most preferably, the raw material of the Si-glass precursor product containing no gas and no hydrogen is tetracyanite. Supply ρ_ glass precursor
554260 A7 B7 五、發明説明(it) 原料優先地包含供應贱決定卜玻璃前身產物原料流量 ,其中直接沉積出玻璃化之矽氧氟化物玻璃的氟濃度在〇· 〇1 %至7%重量比範圍内,優先地在〇· 〇1%至2%重量比範圍内,更 優先地在0.01%至0.5%重量比範圍内。提供氧氣供應源優 先地包含提供預先決定〇2供應氣流,其中直接沉積玻璃化 之矽氧氟化物玻璃的〇2濃度至少為1〇15莫耳/cc。 經濟部中央榡準局員工消費合作社印製 本發明包含一種製造均勻玻璃光石版印刷元件之方法 ,该方法包含提供不含氫燃料之一氧化碳燃燒器;提供一氧 化碳供應源以及氧氣供應源至一氧化碳燃燒器以形成一氧 化碳反應火焰,提供直接玻璃沉積表面相鄰於火焰,供應Si -玻璃前身產物原料以及摻雜劑R—玻璃前身產物原料至一 氧化碳燃燒器,其中Si -玻璃前身產物原料以及摻雜劑R一玻 璃前身產物原料在火焰中反應為乾燥摻雜R矽石玻璃粉塵 投射至玻璃沉積表面,該粉塵同時地直接地沉積出以及玻 璃化為乾燥均勻的摻雜R之矽石玻璃物體,以及形成直接沉 積玻璃化之玻璃物體為均勻的玻璃光石版印刷元件。優先 地摻雜R-玻璃前身產物原料由F,Ti,Ge,B,P,及A1摻雜劑R 種類選取出。供應Si-玻璃前身產物原料優先地包含供應 不含氣Si-玻璃前身產物原料,其中直接沉積出玻璃化之玻 璃為不含氯(ClClppm)玻璃以及該玻璃物體形成為不含氣 均勻的玻璃光學元件。供應Si-玻璃前身產物原料優先地 包含供應不含氫S i -玻璃前身產物原料,其中直接沉積玻璃 化之矽氧氟化物玻璃為乾燥玻璃,其OH濃度重量比<i〇ppm 以及玻璃物體形成為乾燥不含氯之均勻玻璃元件,其OH濃 本紙張尺度適用中國國家標準(CNS〉A4規格(210X297公釐) 28554260 A7 _____ B7 _ 五、發明説明(y| ) 度重量比<10ppm,更優先地其中不含氯不含氫Si_玻璃前身 產物原料為四氰酸石夕。 本發明包含一種製造均勻玻璃光石版印刷元件之方法 ,該方法包含提供不含氫燃料之一氧化碳燃燒器;提供一氧 化碳供應源以及氧氣供應源至一氧化碳燃燒器以形成一氧 化碳反應火焰,提供直接玻璃沉積表面相鄰於火焰,供應Si -玻璃前身產物原料至一氧化碳燃燒器,其中Si—玻璃前身 產物原料在火焰中反應為乾燥矽石玻璃粉塵投射至玻璃沉 積表面,該粉塵同時地直接地沉積出以及玻璃化為乾燥均 勻的摻雜R之矽石玻璃物體,以及形成直接沉積玻璃化之玻 璃物體為均句的玻璃光石版印刷元件。優先地供應Si一玻 璃前身產物原料包含供應不含氣Si-玻璃前身產物原料,其 中直接沉積出玻璃化之玻璃為不含氣(□<1卯111)玻璃以及 該玻璃物體形成為不含氣均勻的玻璃光學元件。優先地, 供應Si-玻璃前身產物原料包含供應不含氫Si—玻璃前身產 物原料,其中直接沉積玻璃化玻璃為乾燥玻璃,其〇H濃度重 量比<10ppm以及玻璃物體形成為乾燥均勻玻璃光學元件, 經濟部中央榡隼局員工消費合作杜印製 (請先閲讀背面之注意事項再填寫本頁) 其0H濃度重量比<l〇ppm,更優先地〇H濃度重量比<ippm。在 優先實施例中供應Si-玻璃前身產物原料包含供應不含氣 不含氫之Si-玻璃前身產物原料,其中直接沉積出玻璃化之 矽玻璃為乾燥不含氯之矽玻璃,其〇H濃度重量比<i〇ppm以 及玻璃物體形成為乾燥不含氣均勻的玻璃元件,其〇H濃度 重量比ClOppm,優先地0H濃度重量比<ippm。 由於氟為本發明熔融矽石所需要之成份,含有氟之F - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 554260 A7 B7 五、發明説明( 玻璃前身產物原料例如為氟化矽,四氟化矽以及其混合物 能夠使用於本發明方法中。除了使用氟化矽原料,能夠使 用氟來源原料F-玻璃前身產物原料例如為邙4, SFe,F2, c3f8 以及GF6以及含有矽原料化合物玻璃前身產物原料反 應以由氟化石夕之石夕石粉塵製造出摻雜氟之石夕石。 除了優先地不含0H基,摻雜氟以及不含氯,我們發現本 發明熔融矽石光學遮罩毛胚分子氫為低濃度的,優先地小 於lxlO17分子/cm3,以及更優先地小於5x1〇h分子/cm3之 分子氫。 減小0H含量至小於5〇ppm,小於i〇ppm,以及最優先地小 於lppm以及將矽石玻璃摻雜氟提供作為提高157哪之透射 性以及降低熱膨脹性。優先地,摻雜氟低〇Hi157nm透射光 石版印刷的熔融矽石玻璃光學遮罩基質157nm之透射度至 少為80%,優先地至少為83%以及熱膨脹性小於〇. 55ppm/°C, 優先地小於0· 53ppm/°C。 經濟部中央標準局員工消費合作社印製 本發明更進一步包含低於175nm VUV光石版印刷玻璃 。光石版印刷玻璃包含熔融矽氧氟化物玻璃。矽氧氟化物 玻璃具有OH含量小於5ppm重量比,C1含量小於5ppm重量比, H2含量小於lxl〇17分子/立方公分,氟含量至少為〇. 1%重量 比,玻璃之157nm内部透射至少為80%/公分以及優先地至少 為85%/公分。矽氧氟化物玻璃具有較低炫融矽石之熱膨脹 係數,其在室溫至300°C範圍内小於〇· 55ppm/°C。優先地光 石版印刷破璃在157nm至175nm波長範圍内之内部透射至少 為80%/公分,優先地至少為85%/公分。優先地,當暴露於4 本紙張尺度適用中國國家標準(CNS〉A4規格(210X 297公釐) 31 554260 A7 B7 _ 五、發明説明(4 ) mJ/平方公分-脈沖含有157nm波長之F2準分子雷射照射至 少〇· 96x106脈沖時矽氧氟化物之光石版印刷玻璃在215nm 下吸收增加小於0· 1光學密度(1〇如透射度)每毫米,以及 更優先地在215nm下吸收增加小於0· 05光學密度,以及最優 先地並無215nm吸收頻帶形成。優先地玻璃之C1含量小於 lppm以及OH含量小於lppm,以及更優先地玻璃包含Si,0,及 F。優先地玻璃不含金屬與金屬Si_Si鍵,以及玻璃不含165 nm吸收中心,其在165nm下内部透射至少為85%/公分。 在優先實施例中,使用光石版印刷玻璃製造VUV透射性 光學遮罩,其中VUV光線透射通過光學遮罩,優先地光石版 印刷玻璃表面具有圖案化沉積薄膜(例如為Cr),其形成透 射性光石版印刷遮罩圖案。在另一實施例中,使用光石版 印刷玻璃製造VUV相位偏移光學遮罩,其中運行通過玻璃之 VUV光石版印刷光線相位被偏移以及操作來形成建設性及 /或破壞性干涉圖案。在另外一個實施例中使用降低熱膨 脹性以及熱膨脹係數小於〇· 55ppm/°C之光石版印刷玻璃以 製造出反射性光學遮罩,其中反射性圖案之光石版印刷遮 罩圖案藉由矽氧氟化物玻璃支撐。 經濟部中央標率局員工消費合作社印製 本發明更進一步包含VUV光石版印刷印製圖案之方法, 該方法包含提供低於164nm輻射線光源以製造出VUV光石版 印刷光子,提供矽氧氟化物光石版印刷玻璃,其具有小於5 ppm重量比OH,小於5ppm重量比C1,以及157nm以及165nm量 測透射度至少為75%/5公分,透射VUV光石版印刷光子通過 所提供矽氧氟化物光石版印刷玻璃,利用光子形成光石版 554260 經濟部中央榡準局員工消費合作杜印製 五、發明説明(^0) 印刷圖案,以及減小形成之光石版印刷圖案以及投射所形 成圖案於νυν輻射線靈敏性光石版印刷印刷介質上以形成 印製光石版印刷之圖案。提供矽氧氟化物玻璃優先地包含 藉由提供Si-玻璃形成前身產物以降低玻璃之νυν截止波長 ,以及降低由其中製造出直接沉積玻璃化玻璃之Η2,0Η,以 及C1含量以及提高直接沉積玻璃化玻璃之F含量以提供直 接沉積玻璃化之矽氧氟化物玻璃,使得50%透射VUV截止波 長低於160nm。優先地所提供玻璃包含Si,〇,以及F以及不 含Si-Si鍵。 本發明提供157nm光石版印刷光學遮罩基質之光學遮 罩載台以及157nm光石版印刷裝置(I57nm照明系統,光學 遮罩-遮罩載台,157nm投射光學系統,157nm晶片載台),摻 雜氟之低OH的石夕氧1化物光學遮罩石夕石玻璃基質,其含 量低於lppm,氟含量在〇· 1至1.5%重量比範圍内,157咖内 部透射度至少為50%,優先地至少為65%,以及最優先地在 157nm下至少為83%/公分,優先地熱膨脹性小於〇. 55ppm, 優先地小於0.53ppm,以及最優先地小於或等於〇 52ppm/ 〇C。 · ,拋光基質,25mmx25nimxl· 5_厚度由矽氧氟化物玻璃配 製出。作為比較,25mmx25mnix6.35mm厚度基質亦由標準商 業石夕石光學鮮基質切訂。基f在魏/過氧化^溶液 以及遮覃清潔劑中進行清理,再進行旋轉乾燥以及在i2(rc 下,烤,—1GG_度之鉻薄膜藉由喷塗方式。薄膜黏 附量測藉由使用Nanoidenter II作刻紋以及刮除測試。、在 (請先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適财目國家標準(CNS ) A4規格(21〇>< 297公势)3罗 554260 A7 ____ B7 五、發明説明(ll ) 2 3 經濟部中央標準局員工消費合作社印製 =同的測試條件下,㈣膜之分層無法產生於任何一種基 質上。這些結果顯示良好的薄膜黏附性。 土 Μ石夕石玻璃結果能夠說明為&〇4四面體網狀結構在四個 角落鍵結在一起以及不規則地朝向相對於彼此。水份加入 結構成為别.(其巾Ξ表示鍵結至仙4網狀結構),使得 與相鄰四面體之鍵結在0Η基處斷裂。0Η在深uv中在〇75ηιη 下產生吸收。氟同樣地加入至結構成為網狀結構 連接在F原子處斷裂。Si-F鍵結相關之電子躍遷預期在較 高能量(較短波長)高於Si-〇網狀結構鍵之情況。摻雜氟之 石夕石結構特別地能夠抵抗由於F2準分子雷射照射產生之破 壞。我們已證實在氟化結構中,甚至於在含有非常低濃度 氟之矽石中E色彩中心之形成高度地受到抑制。氟減少色 彩中心形成之前身產物位置的數目為有可能的,該位置例 如為微弱或飽和鍵以及缺氧之Si-Si缺陷處。 在優先實施例中,本發明包含低於193nm VUV透射性玻 璃光學遮罩基質作為157nm波長之光石版印刷。VUV透射性 玻璃基質包含高純度氧氟化物玻璃,其〇H含量低於5〇卯111重 量比,氫含量低於lxl〇17分子/立方公分,以及氟含量在〇. 1 至〇·你重量比範圍内。優先地玻璃C1含量低於5ppm,更優 先地低於lppm,以及最優先地玻璃不含氣。優先地玻璃具 有分子氫含量低於3xl016分子/立方公分,以及更優先地具 有無法感測之分子氫含量。優先地玻璃具有〇H含量低於1〇 ppm重量比,更優先地低於ippm重量比,以及最優先地具有 無法感測出之0H含量以及實質上不含OH。優先地玻璃由Si (請先閱讀背面之注意事項 —M-- 再本頁} 訂 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 33554260 A7 B7 五、發明説明(u) 經濟部中央標準局員工消費合作社印製 ,0,以及F所構成以及不含OH,Cl以及Η2。優先地矽氧氟化 物玻璃光學遮罩基質在157nm下之内部透射性至少為89%/ 公分,最優先地基質量測經由約為6刪厚度基質例如為6祁 mm厚度光學基質之透射度至少為79%。 在優先地實施例中,本發明包含製造VUV透射玻璃處理 過程,該玻璃對157nm波長區域之準分子雷射照射能夠高度 抵抗光學破壞。處理過程包含形成乾燥及透明熔融矽氧氟 化物玻璃之非多孔性單體,其氟含量小於〇· 5%重量比。 本發明包含F2雷射導致吸收抵抗性矽氧氟化物玻璃而 適合使用於157nm波長區域,玻璃在157_ 6nm情況下具有穩 定以及高度透射性,氟含量小於〇· 5%重量比,使得玻璃在暴 露於0· lmJ/cm2-脈沖之F2準分子雷射60百萬脈沖後在157. 6 nm下透射度損失為<1%。矽氧氟化物玻璃優先地不含〇h基, 具有小於5xl016分子/cm3分子氫,以及氟含量在〇. 1至〇. 4% 重量比範圍内。 本發明包含F2雷射導致吸收抵抗性光石版印刷玻璃, 其包含矽氧氟化物玻璃,玻璃0H含量小於5ppm重量比,C1含 量小於5ppm重量比,以及氟含量在〇· 1至〇·4%重量比範圍内 ,157nm内部透射度至少為80%/cm,更優先地為85%/cm。優 先地玻璃具有Η含量小於1χ1〇17分子/cm3。石夕氧氟化物玻 璃抵抗雷射所導致之吸收以及在暴露於〇· lmj/cm2_脈沖之 F2準分子雷射60百萬脈沖後在157nm下透射度損失為<1%。 矽氧氟化物玻璃對157. 6nm所導致吸收具有抵抗性,氟含量 抑制165nm吸收性之缺乏氡中心。優先地在暴露於2mj/cm2 請 先 閱 讀 背 面 I 事 項 再 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐5Γ 34554260 A7 B7 五、發明説明(乃) 經濟部中央標率局員工消費合作杜印製 -脈沖之157nm雷射41.5百萬脈沖後玻璃之16511111吸收小於 〇· 4(吸收單位/5刪),以及最優先地165服吸收小於〇. 2(吸 收單位/5mm)。優先地C1含量小於lppm及〇H含量小於ippm, 優先地由Si,0及F所構成。在實施例中,玻璃為νυν透射性 光學遮罩。在實施例中玻璃為VUV相位偏移光學遮罩。優 先地玻璃光學遮罩對雷射所導致氧缺乏中心具有抵抗性, 優先地玻璃不含金屬與金屬之Si-Si鍵以及不含165nm吸收 中心以及在165nm下内部透射度至少為85%/cm。 本發明包含印製VUV圖案之方法。印製圖案方法包含 提供低於164nm輻射線光源作為產生VUV光子,提供矽氧氟 化物玻璃,其具有0H小於5ppm重量比,C1小於5ppm重量比, 氟含量小於0· 5%重量比,以及I57nm以及165nm量測透射度 至少為75%/5mm。該方法包含透射VUV光子通過矽氧氟化物 玻璃,利用丽光子形成圖案,以及投射圖案至丽輻射線靈 敏性印製介質上以形成印製圖案。在優先實施例中,νυν光 石版印刷印製圖案方法包含提供VUV光石版印刷光子輻射 線光源,提供0H小於lppm之矽氧氟化物玻璃,透射VUV光石 版印刷光子通過矽氧氟化物光石版印刷玻璃,利用νυν光子 形成光石版印刷圖案,及投射光石版印刷圖案至VUV輻射靈 敏性光石版印刷印製介質上以形成印製光石版印刷圖案。 VUV印製圖案方法優先地包含藉由提供Si—玻璃形成前 身產物以及摻雜F降低矽氧氟化物玻璃之VUV截止波長以提 供石夕氧氟化物玻璃之50%透射VUV截止波長低於160nm以及 在暴露於2mJ/cm2-脈沖之157nm雷射41. 5百萬脈沖後玻璃 (請先閱讀背面之注意事項再填寫本頁) 、-口 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 554260 A7 B7 五、發明説明(yV) 之165nm吸收小於〇·4(吸收單位/5刪)。 本發明藉由矽氧氟化物玻璃具有高純度以及為乾燥的 (<lppm之0Η),在VUV中提供非常良好透射性。本發明玻璃 提供157nm透射度例如為79. 8%/6. 35mm(以及90%/cm内部透 射度)。矽氧氟化物玻璃優先地使用作為157nm光石版印刷 組件,特別疋光學遮罩基質,薄膜,薄透鏡以及玻璃。對於 這些光石版印刷應用,玻璃呈現出高初始透射性不但是重 要的,同時在暴露於F2準分子雷射下透射度必需不能減小 。在暴露於0· lmj/cm2—脈沖之&準分子雷射6〇百萬脈沖後 ,玻璃在157· 6nm下產生<1%透射損失。我們優先使用矽氧 氟化物玻璃組成份對F2雷射所導致之吸收呈現出改良抵抗 性。 * 我們發現雖然添加氟至乾燥矽石玻璃將改善真空紫外 線特別是接近紫外線邊緣(例如在⑸⑽)之透射性,在玻璃 中高濃度氟對雷射損壞抵抗性並不有益。特別地,我們發 現在F2準分子雷射照射下,玻璃中所導致吸收與玻璃氟含 量成比例。當氟含量增加時,所導致157· 6nm吸收將增加。 經濟部中央榡準局員工消費合作衽印製 優先地矽氧氟化物玻璃具有氟含量小於0. 5%重量比。 我們<0· 5%重量比乾燥矽氧氟化物玻璃呈現出良好的雷射 耐久性以及適合多種應用包含暴露於F2準分子雷射照射。 達成高初始透射性以及導致低吸收之1?成份在〇,卜〇. 4%範 圍内。 本發明包含VUV透射矽氧氟化物玻璃之OH含量小於5ppm 重量比,氟含量至少為0.1%重量比。優先地,玻璃由Si, 0及 本紙張尺度適财關家榡準(CNS )八4規格(21QX297公釐) 36554260 A7 B7 五、發明説明nf) 經濟部中央榡準局員工消費合作社印製 F所構成,在157nm至175nm波長範圍内玻璃内部透射至少為 85%/cm。優先地在暴露於2niJ/cm2-脈沖之157nm雷射41. 5 百萬脈沖後玻璃之165nm吸收小於〇· 4(吸收單位/5刪)。 範例: 為了在157nm達到所需要透射(85°/。/6· 35刪(量測),0H, C1,金屬(例如Fe, Zr)濃度,本質性缺陷(例如過氧連結),以 及肉眼可見缺陷(例如為氣泡)必需減為最小。直接—玻璃 乾燥燃燒處理過程使用C0燃料為優先方式以製造乾燥摻雜 F之Si〇2玻璃作為該應用以及其他應用。乾燥含摻雜劑之 Si〇2玻璃直接地在單一步驟處理過程中製造出。由於存在 H,曱烷燃燒器有效地受限於製造出相當潮濕之粉塵,其需 要額外乾燥以及固結以製造出乾燥玻璃之處理步驟作為多 步驟為主之處理過程。注意雖然⑺燃燒器有可能直接地製 造出乾燥玻璃,其該燃燒器優先地與下列情況使用:(i)不 含Η之Si供應源(例如SiCh)以及(ii)排除η外在來源(例如 滲漏空氣)。除了能夠製造乾燥,含有摻雜劑Si〇2玻璃,本 發明具有下列優點(i)增加玻璃純度(co與大部份金屬反應 形成鼓基),及(ii)減小CF4消耗/減小(與摻雜jr之固結&〇2 粉塵比較,乾燥燃燒處理過程需要非常少邙4以達成相同F 數量)。 雖然發展作為製造157nm光學遮罩板,本發明提供使用 乾燥燃燒以製造出乾燥含有摻雜劑之玻璃以使用作為光學 凡件。玻璃優先地直接地在單一步驟中製造出。摻雜劑能 夠為F,或一種或多種所需要氧化物(包含τ丨〇2,以仏,β2〇3, I適 ί度 尺 一張 一紙 I本 準 標 一家554260 A7 B7 V. Description of the invention (it) The raw material preferentially includes the raw material supply flow of the base glass product, in which the fluorine concentration of the glassy siloxyfluoride glass directly deposited is 0.001% to 7% by weight Within the range, it is preferably in the range of 0.001% to 2% by weight, and more preferably in the range of 0.01% to 0.5% by weight. Providing an oxygen supply source preferably includes providing a predetermined 02 gas supply flow, wherein the concentration of O2 in the directly deposited vitrified silicon oxyfluoride glass is at least 1015 mol / cc. Printed by the Consumers' Cooperative of the Central Government Bureau of the Ministry of Economic Affairs The present invention includes a method for manufacturing a uniform glass lithographic printing element, the method comprising providing a carbon monoxide burner containing no hydrogen fuel; providing a carbon monoxide supply source and an oxygen supply source to the carbon monoxide burner To form a carbon monoxide reaction flame, provide a direct glass deposition surface adjacent to the flame, and supply the Si-glass precursor product raw material and dopant R-glass precursor product raw material to the carbon monoxide burner, wherein the Si-glass precursor product raw material and dopant R The raw material of a glass precursor product reacts in the flame as dry doped R silica glass dust is projected onto the glass deposition surface, the dust is simultaneously deposited directly and vitrified into a dry and uniform R doped silica glass object, and forms Directly deposited vitrified glass objects are uniform glass lithographic printing elements. The raw materials for the doped R-glass precursor products are preferably selected from the types of F, Ti, Ge, B, P, and A1 dopants R. The supply of Si-glass precursor product raw materials preferentially includes the supply of gas-free Si-glass precursor product raw materials, in which the vitrified glass directly deposited is chlorine-free (ClClppm) glass and the glass object is formed as a gas-free uniform glass optics element. The supply of the Si-glass precursor product raw materials preferentially includes the supply of hydrogen-free Si-glass precursor product raw materials, in which the directly deposited vitrified silicon oxyfluoride glass is a dry glass, with an OH concentration-to-weight ratio < i ppm and glass objects Formed as a dry, non-chlorine uniform glass element, the OH concentration of this paper is in accordance with Chinese national standard (CNS> A4 specification (210X297 mm) 28554260 A7 _____ B7 _ 5. Description of the invention (y |) Degree weight ratio < 10ppm More preferably, the raw material of the Si_glass precursor product which does not contain chlorine and hydrogen is tetracyanite. The present invention includes a method for manufacturing a uniform glass light lithographic printing element, which comprises providing a carbon oxide burner that does not contain hydrogen fuel. ; Provide a carbon monoxide supply source and an oxygen supply source to a carbon monoxide burner to form a carbon monoxide reaction flame, provide a direct glass deposition surface adjacent to the flame, and supply a Si-glass precursor product raw material to the carbon monoxide burner, wherein the Si-glass precursor product raw material is in the flame The intermediate reaction is that the dry silica glass dust is projected onto the glass deposition surface, and the dust is simultaneously and directly Deposited and vitrified into dry and uniformly doped silica glass objects, and glass-lithographic lithographic printing elements that form directly deposited vitrified glass objects are homogeneous. Preferential supply of Si-glass precursor products includes Raw materials for precursor products of gas Si-glass, in which vitrified glass directly deposited is gas-free (□ < 1 卯 111) glass and the glass object is formed as a glass-free uniform optical element. Preferably, Si- The raw materials of glass precursor products include the supply of hydrogen-free Si-glass precursor products. Among them, directly deposited vitrified glass is dry glass, its 0H concentration weight ratio < 10ppm, and glass objects are formed as dry uniform glass optical elements. Printed by the Bureau of Consumer Cooperation (Please read the notes on the back before filling out this page) Its 0H concentration weight ratio < 10ppm, more preferentially, the 0H concentration weight ratio < ippm. Supply in the preferred embodiment The raw material of the Si-glass precursor product includes the supply of the raw material of the Si-glass precursor product which is free of gas and hydrogen, and the vitrified silica glass is directly deposited for drying. The chlorine-containing silica glass has a 0H concentration-weight ratio <ippm and the glass object is formed as a dry, gas-free uniform glass element, and its 0H concentration-weight ratio ClOppm, preferably 0H concentration-weight ratio <ippm. Fluorine is the required component of the fused silica of the present invention, and the F containing fluorine-this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 554260 A7 B7 V. Description of the invention (The raw material of the glass precursor product is fluorine Silicone, silicon tetrafluoride, and mixtures thereof can be used in the method of the present invention. In addition to the silicon fluoride raw material, the fluorine source raw material F-glass precursor product raw materials such as rhenium 4, SFe, F2, c3f8, and GF6 and containing The silicon raw material compound glass precursor product raw material reacts to produce fluorine-doped stone stone stone from fluoride stone stone stone dust. In addition to being preferentially free of 0H groups, doped with fluorine, and free of chlorine, we have found that the fused silica optical mask hair embryo molecular hydrogen of the present invention is low in concentration, preferably less than 1x1017 molecules / cm3, and more preferably less than 5x1. h molecule / cm3 molecular hydrogen. The 0H content is reduced to less than 50 ppm, less than 10 ppm, and most preferably less than 1 ppm, and silica glass doped with fluorine is provided to increase the transmission and reduce the thermal expansion of 157. Preferably, the transmittance of the fused silica glass optical mask substrate with low-Hi157nm transmission light lithography printed at 157nm is at least 80%, preferably at least 83%, and the thermal expansion is less than 0.55ppm / ° C, preferably Less than 0.53ppm / ° C. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The present invention further includes lithographic printing glass with VUV light below 175nm. Light lithographic glass contains fused silica glass. Silicon fluoride glass has an OH content of less than 5ppm by weight, a C1 content of less than 5ppm by weight, an H2 content of less than 1 × 1017 molecules / cm3, a fluorine content of at least 0.1% by weight, and a glass internal transmission of 157nm of at least 80. % / Cm and preferably at least 85% / cm. Silicon oxyfluoride glass has a lower thermal expansion coefficient of fused silica, which is less than 0.55 ppm / ° C in the range of room temperature to 300 ° C. It is preferred that the internal transmission of the lithographic printing glass in the wavelength range of 157nm to 175nm be at least 80% / cm, and preferably at least 85% / cm. Preferentially, when exposed to 4 paper sizes, the Chinese national standard (CNS> A4 specification (210X 297 mm) 31 554260 A7 B7 _ V. Description of the invention (4) mJ / cm2-pulse contains F2 excimer with a wavelength of 157nm The absorption of lithographic lithographic glass of siloxyfluoride light lithographic glass at a laser irradiation of at least 0.96 × 106 pulses is less than 0.1 at 215 nm, and the optical density (10 such as transmittance) per millimeter is more preferably less than 0 at 215 nm. · 05 optical density, and most preferably no 215nm absorption band formation. Preferably the C1 content of the glass is less than 1 ppm and the OH content is less than 1 ppm, and more preferably the glass contains Si, 0, and F. Preferentially the glass does not contain metals and The metal Si_Si bond, and glass does not contain an absorption center of 165 nm, and its internal transmission is at least 85% / cm at 165 nm. In a preferred embodiment, a lithographic printing glass is used to make a VUV transmissive optical mask, in which VUV light is transmitted through Optical mask, preferably with a patterned deposited film (eg, Cr) on the surface of the light lithographic printing glass, which forms a transmissive light lithographic mask pattern. In another embodiment VUV phase-shifted optical masks are manufactured using light lithographic glass, in which the phase of VUV light lithography running through the glass is shifted and manipulated to form a constructive and / or destructive interference pattern. In another embodiment, reduction is used Light lithographic printing glass with a thermal expansion coefficient and a coefficient of thermal expansion of less than 0.55 ppm / ° C to produce a reflective optical mask, wherein the light lithographic printing mask pattern of the reflective pattern is supported by siloxane glass. The bureau ’s consumer cooperative prints the present invention and further includes a method for printing patterns by VUV light lithography. The method includes providing a radiation source below 164 nm to produce VUV light lithography printing photons, and providing silicon oxyfluoride light lithography printing glass. , Which has a weight ratio of less than 5 ppm OH, a weight ratio of less than 5 ppm C1, and a measured transmittance of 157nm and 165nm of at least 75% / 5 cm, and transmits VUV light lithographic printing photons through the provided oxyfluoride light lithographic printing glass Use of photons to form light stone plates (^ 0) Printing patterns, and reducing the formation of light lithographic printing patterns and projecting the formed patterns on νυν radiation-sensitive light lithographic printing media to form patterns of light lithographic printing. Silicone fluoride glass is preferred The ground includes providing a precursor product of Si-glass to reduce the νυν cutoff wavelength of the glass, and reducing the Η2,0Η, and C1 content of the directly deposited vitrified glass produced therefrom, and increasing the F content of the directly deposited vitrified glass to provide Direct deposition of vitrified silicon oxyfluoride glass, so that 50% transmission VUV cut-off wavelength is below 160nm. The glass provided preferably contains Si, O, and F and does not contain Si-Si bonds. The present invention provides an optical mask stage for a 157nm light lithography optical mask substrate and a 157nm light lithography printing device (I57nm illumination system, optical mask-mask stage, 157nm projection optical system, 157nm wafer stage), doped Low-OH fluorinated stone oxo 1-oxide optical mask stone oxite glass substrate, the content of which is less than 1 ppm, the fluorine content is in the range of 0.1 to 1.5% by weight, and the internal transmittance of 157 coffee is at least 50%, preferably The ground is at least 65%, and most preferably at least 83% / cm at 157 nm, preferably with a thermal expansion of less than 0.55 ppm, preferably less than 0.53 ppm, and most preferably less than or equal to 0.52 ppm / ° C. ·, Polishing substrate, 25mmx25nimxl · 5_ Thickness is prepared from silicon oxyfluoride glass. For comparison, a 25mmx25mnix 6.35mm thick substrate was also cut from a standard commercial Shi Xishi optical fresh substrate. The base f is cleaned in Wei / peroxide solution and shade cleaning agent, and then spin-dried and baked at i2 (rc, -1GG_ degree chromium film by spraying method. Film adhesion measurement by Use Nanoidenter II for engraving and scraping test., (Please read the precautions on the back before filling out this page) Revision of the paper size national standard (CNS) A4 specification (21〇 > < 297 public momentum ) 3 Luo 554260 A7 ____ B7 V. Description of the Invention (ll) 2 3 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs = Under the same test conditions, the stratification of the diaphragm cannot be generated on any kind of substrate. These results show good The film adhesion of the soil M Shixi stone glass can be explained as & 04 tetrahedral mesh structure is bonded together at four corners and irregularly oriented relative to each other. Water addition structure becomes different. (Its The Ξ indicates that the bond is to the 4 reticular structure), so that the bond with the adjacent tetrahedron is broken at the 0 Η base. 0 吸收 absorbs in deep UV at 0 75 ηη. Fluorine is also added to the structure to form a reticular structure. Break at F atom Si-F bonding-related electron transitions are expected to be higher in energy (shorter wavelengths) than Si-0 network structure bonds. Fluorine-doped sparite structures are particularly resistant to F2 excimer laser radiation The damage caused. We have confirmed that in the fluorinated structure, the formation of E color centers is highly suppressed even in silica containing very low concentrations of fluorine. It is possible for fluorine to reduce the number of body product positions before the formation of color centers. This position is, for example, a weak or saturated bond and an oxygen-deficient Si-Si defect. In a preferred embodiment, the present invention includes a VUV-transmissive glass optical masking substrate below 193 nm as a light lithography with a wavelength of 157 nm. VUV-transmittance The glass matrix contains high-purity oxyfluoride glass with an OH content of less than 50% by weight, a hydrogen content of less than 1 × 1017 molecules / cubic centimeter, and a fluorine content in the range of 0.1 to 〇 · your weight ratio. .Glass C1 content is preferably less than 5ppm, more preferably less than 1ppm, and most preferably the glass does not contain gas. Preferentially, the glass has a molecular hydrogen content of less than 3 x 1016 molecules per cubic centimeter, and more preferably The ground has an undetectable molecular hydrogen content. Preferentially the glass has a 0H content below 10 ppm by weight, more preferably below ippm by weight, and most preferably has an undetectable 0H content and substantially does not. Contains OH. The glass is preferentially made of Si (please read the precautions on the back—M-- then this page) The size of the paper is applicable to China National Standard (CNS) A4 (210X 297 mm) 33554260 A7 B7 V. Description of the invention (U) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. It is composed of 0, and F and does not contain OH, Cl and Η2. Preferentially, the internal transmittance of the silicon oxyfluoride optical mask substrate at 157 nm is at least 89% / cm, and the most preferred basis mass is measured by about 6 thickness of the substrate, for example, 6 mm thickness of the optical substrate. Is 79%. In a preferred embodiment, the present invention includes a process for manufacturing a VUV transmission glass that is highly resistant to optical damage by excimer laser irradiation in the 157 nm wavelength region. The treatment process includes forming non-porous monomers of dry and transparent molten siloxyfluoride glass with a fluorine content of less than 0.5% by weight. The invention contains F2 laser which causes absorption-resistant siloxyfluoride glass and is suitable for use in the 157nm wavelength region. The glass has stability and high transmission under the condition of 157-6nm, and the fluorine content is less than 0.5% by weight, which makes the glass exposed. After 60 million pulses of F2 excimer laser at 0 · lmJ / cm2-pulse, the transmission loss at 157.6 nm is < 1%. The silicon oxyfluoride glass preferably does not contain 0h groups, has less than 5 × 1016 molecules / cm3 of molecular hydrogen, and has a fluorine content in the range of 0.1 to 0.4% by weight. The present invention includes F2 laser-induced absorption-resistant light lithographic printing glass, which includes silicon oxyfluoride glass, the glass 0H content is less than 5 ppm by weight, the C1 content is less than 5 ppm by weight, and the fluorine content is between 0.1 and 0.4%. Within the weight ratio range, the internal transmission at 157 nm is at least 80% / cm, and more preferably 85% / cm. It is preferred that the glass has a scandium content of less than 1 × 1017 molecules / cm3. Shixi oxyfluoride glass resists absorption caused by laser and transmission loss at <157% at 157nm after exposure to 60 million pulses of F2 excimer laser at lmj / cm2_pulse. Siloxyfluoride glass is resistant to absorption caused by 157.6 nm, and the lack of fluorine center suppresses absorption at 165 nm. Prior to exposure to 2mj / cm2, please read the I item on the back first, and then the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm 5Γ 34554260 A7 B7) V. Description of the invention Cooperative Du-printing-Pulse of 157nm laser 41.5 million pulses, the absorption of glass 16511111 is less than 0.4 (absorption unit / 5 deleted), and most preferentially the absorption of 165 is less than 0.2 (absorption unit / 5mm). Priority The content of ground C1 is less than 1 ppm and the content of 0H is less than ippm, preferably composed of Si, 0, and F. In the embodiment, the glass is a νυν transmissive optical mask. In the embodiment, the glass is a VUV phase shift optical mask .Glass optical masks are preferentially resistant to oxygen deficiency centers caused by lasers. Preferentially glass does not contain metal-to-metal Si-Si bond and 165nm absorption center and the internal transmittance is at least 85% at 165nm / cm. The invention includes a method for printing a VUV pattern. The method for printing a pattern includes providing a light source of radiation below 164 nm as a VUV photon, and providing a silicon oxyfluoride glass having a weight ratio of 0H to less than 5 ppm, C1 At a weight ratio of 5ppm, a fluorine content of less than 0.5% by weight, and a transmission measured at I57nm and 165nm of at least 75% / 5mm. The method includes transmitting VUV photons through a silicon oxyfluoride glass, using Li photons to form a pattern, and A pattern is projected onto a radiation-sensitive sensitive printing medium to form a printed pattern. In a preferred embodiment, a νυν light lithographic printing pattern printing method includes providing a VUV light lithographic printing photon radiation source, providing 0H less than 1 ppm of silicon oxide. Fluoride glass, transmission of VUV light lithography photons pass through silicon oxyfluoride light lithography glass, use νυν photons to form light lithography printing patterns, and project light lithography printing patterns onto VUV radiation-sensitive light lithography printing media to form printing Photolithographic lithographic printing. The method of VUV printing includes preferentially reducing the VUV cut-off wavelength of silicon oxyfluoride glass by providing a precursor for Si-glass formation and doping with F to provide 50% transmission VUV of oxyfluoride glass The cut-off wavelength is below 160nm and the glass is exposed to 21.5MJ / cm2-pulse at 157nm laser 41.5 million pulses (please read the back Please fill in this page if you want to pay attention to matters),-The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 554260 A7 B7 5. Description of the invention (yV) The absorption at 165nm is less than 0.4 (absorption unit / 5 delete 8% / 6 The invention provides high purity and dryness (< lppm of 0Η) by using silicon oxyfluoride glass, which provides very good transmittance in VUV. The glass of the present invention provides a transmission of 157nm, such as 79.8% / 6 35mm (and 90% / cm internal transmittance). Siloxyfluoride glass is preferentially used as a 157nm light lithographic printing module, especially for optical mask substrates, films, thin lenses, and glass. For these light lithographic applications, it is not only important that the glass exhibit high initial transmission, but the transmission must not be reduced when exposed to F2 excimer lasers. After exposure to 0 · lmj / cm2—pulse & excimer laser 60 million pulses, the glass produced < 1% transmission loss at 157.6 nm. Our preference is to use silicon fluoride glass components with improved resistance to absorption caused by F2 lasers. * We have found that although the addition of fluorine to dry silica glass will improve the transmission of vacuum UV rays, especially near the edges of UV rays (for example at radon), high concentrations of fluorine in glass are not beneficial for laser damage resistance. In particular, we find that the absorption in glass caused by F2 excimer laser radiation is proportional to the fluorine content of the glass. When the fluorine content increases, the resulting 157.6 nm absorption will increase. 5% 重量 比。 Printed by the Ministry of Economic Affairs of the Central Bureau of Consumers of the Ministry of Economic Affairs on consumer cooperation. Priority: Silicon fluoride glass has a fluorine content of less than 0.5% by weight. Our < 0.5% by weight dry silicon oxyfluoride glass exhibits good laser durability and is suitable for a variety of applications including exposure to F2 excimer laser radiation. A 1% component that achieves high initial transmission and results in low absorption is in the range of 0.4%. In the present invention, the OH content of the VUV-transmissive silicon oxyfluoride glass is less than 5 ppm by weight, and the fluorine content is at least 0.1% by weight. Preferentially, the glass is printed by Si, 0 and this paper size (CNS) 8 4 specifications (21QX297 mm) 36554260 A7 B7 V. Description of the invention nf) The Ministry of Economic Affairs Central Government Standards Bureau employee consumer cooperatives F In the composition, the internal transmission of the glass in the wavelength range of 157nm to 175nm is at least 85% / cm. Preferentially, the 165nm absorption of glass after exposure to 2niJ / cm2-pulsed 157nm laser 41.5 million pulses is less than 0.4 (absorption unit / 5 deleted). Example: In order to achieve the required transmission at 157nm (85 ° /./ 6 · 35 delete (measurement), 0H, C1, metal (such as Fe, Zr) concentration, essential defects (such as peroxy link), and visible to the naked eye Defects (eg, bubbles) must be minimized. Directly—The glass drying combustion process uses CO fuel as the preferred method to produce dry F-doped Si02 glass for this and other applications. Dry dopant-containing Si. 2 The glass is manufactured directly in a single-step process. Due to the presence of H, the oxane burner is effectively limited to the production of quite moist dust, which requires additional drying and consolidation to produce dry glass. Step-based processing. Note that although thorium burners may directly produce dry glass, this burner is preferentially used in the following cases: (i) a source of Si-free Si (such as SiCh) and (ii) Exclude η external sources (such as air leakage). In addition to being able to manufacture dry, doped SiO 2 glass, the present invention has the following advantages (i) increased glass purity (co and most metals A drum base should be formed), and (ii) CF4 consumption / reduction is reduced (compared with jr-doped consolidation & 02 dust, the dry combustion process requires very little 邙 4 to achieve the same F number). Although development As a 157nm optical mask plate, the present invention provides the use of dry combustion to produce dry dopant-containing glass for use as an optical element. The glass is preferably manufactured directly in a single step. The dopant can be F, Or one or more required oxides (including τ 丨 〇2, with 仏, β2〇3, I appropriate scale, one paper, one standard, one standard)
4 A 5 N (請先閱讀背面之注意事項再填寫本頁) -i-口 554260 Α7 37 --- Β7 五、發明説明(j) P2〇5)以製造出所需要之特性。 (請先閲讀背面之注意事項存填寫本頁)4 A 5 N (Please read the notes on the back before filling this page) -i- 口 554260 Α7 37 --- Β7 V. Description of the invention (j) P205) to produce the required characteristics. (Please read the precautions on the back and save this page)
本發明重點在於製造乾燥摻雜!7矽石玻璃,其在157nm 下1測透射度-85 %/ 6.35mm以使用作為光石版印刷之光學 $罩。為了達成所需要透射,下列濃度必需為最少:(i)雜 質(主要為水份(〇H),Cl,以及金屬(例如Fe,Zr)), (ii)本質 性缺陷(主要氧氣缺陷中心以及過氧連結),以及(iii)肉眼 可見缺陷(主要為氣泡)。 進行實驗以及理論工作以決定影響雜質以及缺陷濃度 之處理條件。主要重點在於熱動力預測以及0H,C1,金屬碎 屑,以及本質性缺陷。表丨列出大部份適當乾燥⑺燃燒運轉 之實驗結果。 水份: 水伤(玻璃中為0H)減小VUV之透射。例如,HPFS(Corning 編號7890),由火焰水解處理過程(其中CH4為燃料及〇1:1^為 石夕來源)製造出熔融矽石並不會透射低於17〇nm波長之光線, 經濟部中央標準局員工消費合作社印製 因為高水份含量(通常為800ppm之OH),如圖15所示。在玻璃 中水份最小化為主要形成乾燥燃燒處理過程之驅動力,其中 H藉由將單一燃燒器高溫爐中(圖12)燃燒器輸入燃料CH4以CO 以及OMCTS以SiCh替代而消除。一旦配置氮氣幕以助益於排 除潮濕空氣離開高溫爐槽,製造出乾燥玻璃(lppm 〇H),含有 以及不含摻雜劑F,但是總是使用c〇作為燃料以及SiCl4作為 Si來源β雖然其顯著地減少玻璃C卜含量,當0MCTS不含C1之 Si來源以SiCh替代於操作DC6中,其產生太潮濕(約420ppm OH)以及在VUV中並不會透射(圖15顯示出由於水份所導致之 本紙張尺度適用中國國家榡準(CNS ) Α4規格(210Χ297公釐) 38554260 Μ Β7 經濟部中央標準局員工消費合作杜印製 五、發明説明(飞η ) 吸收邊緣)。 氯氣: 類似水份,C1將使VUV透射減小,在紫外線邊緣處吸收 與石夕石玻璃中殘餘氣間具有強烈之相關,以及由於〇在157 nm處具有相當高吸收斷面(6· 約為〇{{情況之4〇% ),該應用只有包含非常少量α。非常不幸地,令人驚奇地, 使用S1CI4,不含氫但是含ci之si來源導致高數量^在乾燥 燃燒處理過程所製造出玻璃中。乾燥燃燒處理過程*SiCh 產生含有約0· 08%重量比Cl(DG0之玻璃。在玻璃中將□最 小化變為發展乾燥燃燒處理過程中主要重點。 評估下列將玻璃中將C1最小化之方式:(i)使用不含^ 供應源(藉由消除系統中C1而在玻璃中消除Q ),( i i )提高 〇2(藉由在燃燒氣體中增加〇2而將玻璃中C1減為最低), (iii)增加CF(藉由提高F加入而將玻璃中C1減為最低)。 理論及/或實驗顯示所有這四種方式將導致具有較低 C1含量之玻璃;不過只有(ii)及(丨丨丨)能夠實施而不會將η 加入系統内。共同使用提高〇2以及提高CF4以達成約0.02% 重量比C1 (由初始條件DG降低75%)。Si(NCO)4能夠作為有 益的原料。 主要理念在於(〇完全地將C1排除於系統,以及清楚地 為最佳方式使玻璃中C1消除/減為最低。主要理念在於(ϋ) 在燃燒氣體中增加〇2將阻礙Cl_加入之反應,即下列反應式 向左偏移: 〇·5 Cl2(氣體)+Si〇2(玻璃)-> SiOuCK摻雜C1 玻璃)+〇2(氣體) (請先閲讀背面之注意事項再填寫本頁) it 、τThe present invention focuses on the manufacture of dry-doped! 7 silica glass, which has a transmittance of -85% / 6.35mm at 157nm to use as an optical cover for light lithography. In order to achieve the required transmission, the following concentrations must be minimal: (i) impurities (mainly water (OH), Cl, and metals (eg Fe, Zr)), (ii) essential defects (mainly oxygen defect centers and Peroxidation), and (iii) visual defects (mainly air bubbles). Perform experimental and theoretical work to determine processing conditions that affect impurity and defect concentrations. The main focus is on thermodynamic prediction and 0H, C1, metal debris, and essential defects. Table 丨 lists the experimental results of most suitable drying and combustion operations. Moisture: Water damage (0H in glass) reduces VUV transmission. For example, HPFS (Corning No. 7890), produced by the flame hydrolysis process (where CH4 is the fuel and 0: 1 ^ is the source of Shi Xi), does not transmit light below the wavelength of 170nm. Ministry of Economic Affairs Printed by the Consumer Standards Cooperative of the Central Bureau of Standards due to the high moisture content (usually 800 ppm of OH), as shown in Figure 15. The minimization of moisture in the glass is the driving force that mainly forms the dry combustion treatment process, where H is eliminated by replacing the input fuel CH4 with CO and OMCTS with SiCh in a single burner high temperature furnace (Figure 12). Once the nitrogen curtain is configured to help exclude humid air from leaving the high-temperature furnace, dry glass (1 ppm 0H) is produced, with and without dopant F, but co is always used as fuel and SiCl4 is used as Si source β. It significantly reduces the C content of glass. When 0MCTS does not contain C1, the Si source is replaced by SiCh in the operation DC6, which is too humid (about 420ppm OH) and does not transmit in VUV (Figure 15 shows that due to moisture The resulting paper size applies to China National Standards (CNS) A4 specifications (210 × 297 mm) 38554260 Μ B7 Duo printed by the staff of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Production description (Flying η) absorption edge). Chlorine: Similar to water, C1 will reduce VUV transmission, and there is a strong correlation between the absorption at the ultraviolet edge and the residual gas in Shi Xishi glass, and because of the relatively high absorption cross section at 157 nm (6 · about For 0 ({40% of the case), the application contains only a very small amount of α. Very unfortunately, surprisingly, the use of S1CI4, hydrogen-free, but si-containing si sources results in high quantities ^ in the glass produced by the dry combustion process. Dry combustion process * SiCh produces glass containing about 0.08% by weight Cl (DG0. Minimizing □ in glass becomes the main focus in developing dry combustion process. Evaluate the following ways to minimize C1 in glass : (I) Use a source that does not contain ^ (eliminate Q in glass by eliminating C1 in the system), (ii) increase 〇2 (minimize C1 in glass by increasing 〇2 in the combustion gas) (Iii) Increase CF (minimize C1 in the glass by increasing F addition). Theory and / or experiments show that all four methods will result in glasses with lower C1 content; however, only (ii) and (丨 丨 丨) can be implemented without adding η to the system. Common use increases 〇2 and CF4 to achieve about 0.02% weight ratio C1 (75% reduction from the initial condition DG). Si (NCO) 4 can be used as a benefit The main idea is that (0 completely excludes C1 from the system, and clearly the best way to eliminate / minimize C1 in the glass. The main idea is (i) adding 0 to the combustion gas will prevent Cl_ from being added Response, the following reaction shifts to the left: · 5 Cl2 (gas) + Si〇2 (glass) - > SiOuCK C1-doped glass) + 〇2 (gas) (Read Notes on the back and then fill the page) it, τ
本紙張尺度適用中國國家標準(CNS ) A4規格(210X <297公釐 554260 A7 —___B7 五、發明説明(切) 圖16顯示提高〇2之預期效應。主要理念在於以及ρ 在Si〇2中佔據位址以及提高f濃度將減小玻璃中C1濃度。 理論以及實驗所顯示均證實該方式為有用的。增加 提高〇2以及減小SiCl4流動將導致藉由使用Sich作為&來 源(DC5,約〇· 02%重量比ci)乾燥燃燒製造出玻璃之〇1為最 低。 、、 金屬碎屑: 由於金屬碎屑已知為減小紫外線之透射,本發明目標 在於製造出高純度玻璃而含有最少金屬碎屑。不過,在這 些玻璃中相當高C1濃度,由於存在金屬碎屑導致之透射損 失為第二等級之影響。如表1所示,Fe及Zr濃度(主要金屬 碎屑)藉由使用純化C0及在DC10中藉由以Al2〇3替代锆耐火 材料而顯著地降低(Fe減小約2倍,以及Zr減小約10倍)。 表2 經濟部中夬榡準局員工消費合作社印製 在157nm及193nm處吸收斷面 種類 axl(T2°cm2 σχ1(Γ2°αη2 157nm之 1%/cm透射 193nm之 1%/cm透射 (157nm) (193nm) 損失(ppm重量比) 損失(ppm重量比) *C1 6.3 2(C1) 簡 16.8 0· 4(0H) A1 33.6 0. 56(Al2〇3) Na 57.9 1.6 0· 2(Na2〇) 7(Na2〇) Zr 748 6.4 0· 06(Zr〇2) 7(Zr〇2) Fe 879 658 0.03(FeO) 0·04(FeO) 此在157nm及193nm處吸收斷面研究顯示出使用礬土 本紙張尺度適用中國國家標率(CNS ) A4規格(21〇x 297公釐) 554260 A7 B7 經濟部中央榡準局員工消費合作社印製 五、發明説明(Vi) 耐火材料製造157nm玻璃之優點。 本質性缺陷: 氧化以及還原效應已知會減小157nm之透射,因而本發 明目標在於製造出中性(即無氧化或還原)玻璃而兩種缺陷 為最小。人們了解Si金屬-金屬鍵結缺陷為i65nm吸收頻帶 之主要原因,该吸收顯者地減少157ηπι之透射。本質性缺陷 自然地發生於在高溫平衡條件下配製出矽酸鹽玻璃中,溫 度及化學計算已知將影響濃度。我們顯示出165nm吸收頻 帶能夠減少玻璃中F濃度而減為最低/加以消除。如圖“斤 示,出現於所有情況下除了 DC7(無F),DC8(低M.28%重量 比),以及DC10(低F,0· 22%重量比)之i65nm吸收頻帶。 人們了解熟知此技術者能夠對本發明作各種變化及改 變,但是並不脫離本發明之精神及範圍。因而,下列申請專 利範圍以及其同等情況將含蓋本發明之各種變化及改變。 (請先閲讀背面之注意事項再填寫本頁)This paper size applies Chinese National Standard (CNS) A4 specification (210X < 297 mm 554260 A7 — ___B7) V. Description of the invention (cut) Figure 16 shows the expected effect of increasing 〇2. The main idea is that ρ is in SiO2 Occupying the site and increasing the f concentration will reduce the C1 concentration in the glass. The theory and experiments have shown that this method is useful. Increasing the O2 and reducing the SiCl4 flow will lead to the use of Sich as the & source (DC5, About 0.02% by weight ci) Drying and burning to produce glass is the lowest. 0 ,, metal chips: Since metal chips are known to reduce the transmission of ultraviolet rays, the object of the present invention is to produce high-purity glass containing Minimal metal debris. However, the C1 concentration in these glasses is quite high, and the transmission loss due to the presence of metal debris is a second-order effect. As shown in Table 1, the Fe and Zr concentrations (main metal debris) are determined by The use of purified CO and a significant reduction in DC10 by replacing Al2O3 with zirconium refractory materials (Fe is reduced by about 2 times and Zr is reduced by about 10 times). Axl (T2 ° cm2 σχ1 (Γ2 ° αη2) 1% of 157nm / cm Transmission 1% / cm of 193nm / cm Transmission (157nm) (193nm) Loss (ppm weight ratio) Loss (ppm weight Ratio) * C1 6.3 2 (C1) Jan 16.8 0 · 4 (0H) A1 33.6 0. 56 (Al2〇3) Na 57.9 1.6 0 · 2 (Na2〇) 7 (Na2〇) Zr 748 6.4 0 · 06 (Zr 〇2) 7 (Zr〇2) Fe 879 658 0.03 (FeO) 0 · 04 (FeO) This absorption cross-section study at 157nm and 193nm shows that the standard of China National Standards (CNS) A4 is used for the paper size of alumina. (21 × x 297 mm) 554260 A7 B7 Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the Invention (Vi) Advantages of 157nm glass made of refractory materials. Essential defects: Oxidation and reduction effects are known to reduce 157nm. Transmission, so the goal of the present invention is to produce neutral (ie, no oxidation or reduction) glass with the smallest two defects. It is known that Si metal-metal bond defects are the main reason for the i65nm absorption band, and the absorption is significantly reduced 157ηπι transmission. Essential defects naturally occur in the preparation of silicic acid under high temperature equilibrium conditions In salt glass, temperature and chemical calculations are known to affect concentration. We show that the absorption band at 165nm can reduce the F concentration in the glass to a minimum / elimination. As shown in the figure, the i65nm absorption band appears in all cases except DC7 (no F), DC8 (low M.28% weight ratio), and DC10 (low F, 0.22% weight ratio). It is well known The skilled person can make various changes and modifications to the present invention, but does not depart from the spirit and scope of the present invention. Therefore, the scope of the following patent applications and their equivalents will cover the various changes and changes of the present invention. (Please read the (Please fill in this page again)
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JP4792146B2 (en) * | 2004-02-25 | 2011-10-12 | Hoya株式会社 | Mask blank glass substrate manufacturing method, mask blank manufacturing method, exposure mask manufacturing method, reflective mask blank manufacturing method, and reflective mask manufacturing method |
JP2005255423A (en) | 2004-03-09 | 2005-09-22 | Asahi Glass Co Ltd | Synthetic quartz glass-made photomask substrate and photomask |
KR101005978B1 (en) * | 2010-05-24 | 2011-01-05 | 최문열 | Decoration bar wrapped with aluminum metal bar and method of manufacturig the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5707908A (en) * | 1995-01-06 | 1998-01-13 | Nikon Corporation | Silica glass |
US5935733A (en) * | 1996-04-05 | 1999-08-10 | Intel Corporation | Photolithography mask and method of fabrication |
DE19649935C2 (en) * | 1996-12-02 | 1999-09-16 | Heraeus Quarzglas | Process for the production of quartz glass bodies |
EP1043282A4 (en) * | 1998-10-28 | 2004-03-31 | Asahi Glass Co Ltd | Synthetic quartz glass and method for production thereof |
JP3654500B2 (en) * | 1998-12-26 | 2005-06-02 | 信越石英株式会社 | Quartz glass material and optical member for F2 excimer laser optical member |
US6242136B1 (en) * | 1999-02-12 | 2001-06-05 | Corning Incorporated | Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass |
US6265115B1 (en) * | 1999-03-15 | 2001-07-24 | Corning Incorporated | Projection lithography photomask blanks, preforms and methods of making |
JP2004519704A (en) * | 2000-09-08 | 2004-07-02 | コーニング インコーポレイテッド | Direct deposition vitrified silicon oxyfluoride lithography glass photomask blank that transmits vacuum ultraviolet light |
-
2001
- 2001-10-02 TW TW090124463A patent/TW554260B/en not_active IP Right Cessation
- 2001-11-28 WO PCT/US2001/044547 patent/WO2002069054A1/en not_active Application Discontinuation
- 2001-11-28 JP JP2002568111A patent/JP2004525409A/en active Pending
- 2001-11-28 KR KR10-2003-7011150A patent/KR20040030512A/en not_active Application Discontinuation
- 2001-11-28 EP EP01995254A patent/EP1368711A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
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EP1368711A4 (en) | 2006-07-19 |
JP2004525409A (en) | 2004-08-19 |
EP1368711A1 (en) | 2003-12-10 |
KR20040030512A (en) | 2004-04-09 |
WO2002069054A1 (en) | 2002-09-06 |
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