548780 3202twf.doc/008 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明u ) 本發明是有關於一種主動像素感測器（Active Pixel Sensoi·; APS)結構，且特別是有關於一種具有高密度像素 陣列和高效率傳遞功能之主動像素感測器結構。 主動像素感測器結構已經應用在我們日常生活之中， 例如近來興起的數位照相機、遠距離之視訊會議或教學以 及監視機等，都會利用到主動像素感測器結構。 接著，請參考第1圖，繪示習知光二極體(Photodiode) 型之主動像素感測器結構圖。在圖中包括有P型半導體基 底11、N型光二極體區域12、N型輸出浮動區域13、N型 重設排出（Reset-dmm)區域14、P型通道阻障（Stopper)區域 15、和使用區域氧化法(Local Oxidation ; LOCOS)之隔離區 域16、傳輸閘電極17、重設電極18以及輸出放大器20。 其中，傳輸閘電極17上輸入一時序脈衝Tx(例如一 0 伏特到5伏特變化），重設電極18上輸入一重設脈衝RG(例 如一 0伏特到5伏特變化)以及在重設排放區域14連接一 直流電壓Vdd(例如5伏特），Ρ型通道阻障區域15係由隔 離區域16的場氧化層(例如二氧化矽構成），以離子植入或 熱擴散形成，用以避免隔離區域16的場氧化層下方，產 生電荷密度太高，發生隔離失效情形。 接著，說明電荷讀出之動作:首先，光二極體區域12 接收一光電能量19，產生流動電荷。然後，進行對Ν型 輸出浮動區域13重設，利用重設電極18輸入一重設脈衝， 使得Ν型輸出浮動區域13上的電荷，排放到重設排放區 域14，造成Ν型輸出浮動區域13上之電壓變化(例如由原 3 (請先閲讀背面之注意事項再填寫本頁)548780 3202twf.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention u) The present invention relates to an Active Pixel Sensoi (APS) structure, and in particular, it relates to An active pixel sensor structure with high-density pixel array and high-efficiency transfer function. The active pixel sensor structure has been used in our daily life, such as the recent rise of digital cameras, long-distance video conferences or teaching, and surveillance machines, etc., all will use the active pixel sensor structure. Next, please refer to FIG. 1 for a structural diagram of a conventional photodiode-type active pixel sensor. The figure includes a P-type semiconductor substrate 11, an N-type photodiode region 12, an N-type output floating region 13, an N-type reset-dmm region 14, a P-type stopper region 15, And an isolation region 16, a transmission gate electrode 17, a reset electrode 18, and an output amplifier 20 using a local oxidation (LOCOS) method. A timing pulse Tx (for example, a change of 0 volts to 5 volts) is input to the transmission gate electrode 17, a reset pulse RG (for example, a change of 0 volts to 5 volts) is input to the reset electrode 18, and a reset discharge region 14 is input Connected to a DC voltage Vdd (for example, 5 volts), the P-type channel barrier region 15 is formed by a field oxide layer (such as silicon dioxide) of the isolation region 16 and is formed by ion implantation or thermal diffusion to avoid the isolation region 16 Under the field oxide layer, the charge density is too high, and an isolation failure occurs. Next, the operation of charge readout is explained. First, the photodiode region 12 receives a photoelectric energy 19 and generates a flowing charge. Then, reset the N-type output floating region 13 and use a reset electrode 18 to input a reset pulse so that the charge on the N-type output floating region 13 is discharged to the reset discharge region 14, causing the N-type output floating region 13 Voltage change (such as the original 3 (Please read the precautions on the back before filling this page)
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本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 548780 A7 B7 經濟部中央標準局員工消費合作社印製 3202twf.doc/008 五、發明説明（1) 先5V下降到4V)。最後，重設電極18之重設脈衝消失後， 再由傳輸閘電極17輸入時序脈衝，將原先光二極體區域12 所產生流動電荷，傳送到N型輸出浮動區域13上，並藉 由輸出放大器20(由兩電晶體Ml、M2構成)感測到N型輸 出浮動區域13之電壓差異，再進行由Out輸出。 在上述結構上，對於使用區域氧化法之隔離區域，目 的爲將兩相鄰之元件區隔離，防止不受對方干擾現象 (Crosstalk phenomenon)、短路（Short Circuit)情形發生，所 以必須具有一定長度，才能達到隔離效果，但是過大的距 離將會降低像素之密度，對於今日技術進步線寬縮小，以 提高空間有效使用度下，將失去經濟效益，但是過度縮小 距離，以提高密度，又會發生干擾，無法發揮隔離效果。 加上，接受光電能量之光二極體區域，所產生電荷之 傳遞途徑爲表面通道(Surface channel)方式，對電荷讀出需 要經過以Si構成的基底與Si〇2的閘氧化層間，所以常常 會受到氧化層（Si〇2)阻陷嚴重影響，使得電荷傳遞減緩， 因此元件運作速度降低。 因此’本發明之目的就是提供一種主動像素感測器結 構，以溝渠隔離(Trench Isolation)方式取代LOCOS之隔離 區域，如此不但減少隔離區域所佔用範圍，對像素陣列密 度提高，並且可以達到有效隔離，防止彼此干擾現象。 此外’本發明之另一目的提供一種主動像素感測器結 構，設計一 P型高摻雜區域於傳輸閘電極下，避免電荷傳 輸時，受到基底和閘氧化層間之Si〇2阻陷，使得傳遞效率 (請先閱讀背面之注意事項再填寫本頁)This paper size applies to Chinese National Standard (CNS) A4 specifications (210 × 297 mm) 548780 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 3202twf.doc / 008 5. Description of the invention (1) 5V to 4V first. Finally, after the reset pulse of the reset electrode 18 disappears, a timing pulse is input from the transmission gate electrode 17 to transfer the flow charge generated in the original photodiode region 12 to the N-type output floating region 13 and the output amplifier 20 (consisting of two transistors M1, M2) senses the voltage difference in the N-type output floating region 13, and then performs output from Out. In the above structure, the isolation area using the area oxidation method is used to isolate two adjacent component areas to prevent crosstalk phenomenon and short circuit from occurring. Therefore, it must have a certain length. In order to achieve the isolation effect, too large a distance will reduce the pixel density. For today ’s technological progress, the line width is reduced to increase the effective use of space, and economic benefits will be lost. However, if the distance is excessively reduced to increase the density, interference will occur. , Can not play the effect of isolation. In addition, in the area of the photodiode that receives photoelectric energy, the transfer path of the generated charge is the Surface Channel method. The readout of the charge needs to pass between the substrate composed of Si and the gate oxide layer of Si02, so it often occurs. It is seriously affected by the blocking of the oxide layer (SiO2), which makes the charge transfer slow down, so the operation speed of the device is reduced. Therefore, the purpose of the present invention is to provide an active pixel sensor structure that replaces the isolation area of LOCOS with a trench isolation method. This not only reduces the area occupied by the isolation area, increases the density of the pixel array, and can achieve effective isolation. To prevent mutual interference. In addition, another object of the present invention is to provide an active pixel sensor structure. A P-type highly doped region is designed under the transmission gate electrode to prevent the Si from being blocked by the Si02 between the substrate and the gate oxide layer when the charge is transferred. Delivery efficiency (Please read the notes on the back before filling this page)
548780 3202twf.d〇c/008 A7 B7 經濟部中央榡準局員Η消費合作社印製 五、發明説明（々） 降低，影響元件運作速度。 根據本發明的目的’提出一種主動像素感測器結構， 包括有:一 P型半導體基底、一 N型光二極體區域、一 P 型高摻雜區域、一 N型輸出浮動區域、一傳輸閘電極、一 N型重設排出區域、一重設電極、一輸出放大器以及兩溝 渠隔離區域。其中，N型光二極體區域，位於p型半導體 基底中之表面，用以接受'—光電熊量，產生一移動電荷， P型高摻雜區域，位於P型半導體基底中之表面，連接N 型光二極體區域，用以增加該移動電荷移動速度，N型輸 出浮動區域，位於P型半導體基底中之表面，連接P型高 摻雜區域，用以移動一排出電荷後，再接收該移動電荷， 造成一變化電壓，傳輸閘電極，連接P型高摻雜區域上方， 輸入一時序脈衝，用以控制移動電荷移動，N型重設排出 區域，位於P型半導體基底中之表面，連接一外部電壓， 用以接收排出電荷，重設電極，連接於N型輸出浮動區域 與N型重設排出區域間的P型半導體基底上方，輸入一重 設脈衝，用以控制排出電荷移動，輸出放大器，連接到N 型輸出浮動區域，用以感測變化電壓；以及兩溝渠隔離區 域，分別連接P型半導體基底中之表面的N型光二極體區 域與N型重設排出區域，用以作隔離。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式之簡單說明： 5 (請先閱讀背面之注意事項再填寫本頁)548780 3202twf.d〇c / 008 A7 B7 Printed by the Central Bureau of Commerce, Ministry of Economic Affairs, and Consumer Cooperatives V. Description of Invention (々) Decreased, affecting the speed of component operation. According to the purpose of the present invention, an active pixel sensor structure is proposed, which includes: a P-type semiconductor substrate, an N-type photodiode region, a P-type highly doped region, an N-type output floating region, and a transmission gate. An electrode, an N-type reset discharge area, a reset electrode, an output amplifier, and two trench isolation areas. Among them, the N-type photodiode region is located on the surface of the p-type semiconductor substrate to receive the amount of photo-bearing, and a mobile charge is generated. The P-type highly doped region is located on the surface of the P-type semiconductor substrate and connects to N. A photodiode region is used to increase the moving charge moving speed. The N-type output floating region is located on the surface of the P-type semiconductor substrate and is connected to the P-type highly doped region to move a discharged charge before receiving the movement. The charge causes a varying voltage to be transmitted to the gate electrode and connected above the P-type highly doped region. A timing pulse is input to control the movement of the moving charge. The N-type reset discharge region is located on the surface of the P-type semiconductor substrate. The external voltage is used to receive the discharge charge, the reset electrode is connected above the P-type semiconductor substrate between the N-type output floating region and the N-type reset discharge region, and a reset pulse is input to control the discharge charge movement and output the amplifier, It is connected to the N-type output floating area to sense the changing voltage; and two trench isolation areas are respectively connected to the N-type surface of the P-type semiconductor substrate. The photodiode region and the N-type reset discharge region are used for isolation. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: 5 (Please read first (Notes on the back then fill out this page)
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本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 548780 3202twf.doc/008 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（w) 第1圖繪示習知光二極體之主動像素感測器結構圖； 以及 第2圖繪示依照本發明較佳實施例之一種主動像素感 測器結構圖。 標號之簡單說明： 11，26: P型半導體基底 12，24: N型光二極體區域 13，25: N型輸出浮動區域 14: N型重設排出區域 15: P型通道阻障區域 16:隔離區域 17，22:傳輸閘電極 18:重設電極 19:光電能量 20:輸出放大器 21:溝渠隔離區域 2 3: P型局慘雑區域 實施例 請參照第2圖，其繪示依照本發明一較佳實施例的一 種主動像素感測器結構圖。 在圖中，包括有P型半導體基底26、N型光二極體區 域24、P型高摻雜區域23、N型輸出浮動區域25、傳輸閘 電極22、N型重設排出區域27、重設電極28、輸出放大 器29以及兩溝渠隔離區域21。與習知不同點在於以兩溝 6 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 548780 3202twf.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (w) Figure 1 shows Xi Zhiguang 2 A structural diagram of an active pixel sensor of a polar body; and FIG. 2 is a structural diagram of an active pixel sensor according to a preferred embodiment of the present invention. Brief description of the numbers: 11, 26: P-type semiconductor substrate 12, 24: N-type photodiode region 13, 25: N-type output floating region 14: N-type reset discharge region 15: P-type channel barrier region 16: Isolation area 17, 22: Transmission gate electrode 18: Reset electrode 19: Photoelectric energy 20: Output amplifier 21: Trench isolation area 2 3: Example of a P-type local miserable area Please refer to FIG. 2, which shows a diagram according to the present invention A structural diagram of an active pixel sensor in a preferred embodiment. In the figure, it includes a P-type semiconductor substrate 26, an N-type photodiode region 24, a P-type highly doped region 23, an N-type output floating region 25, a transfer gate electrode 22, an N-type reset discharge region 27, and a reset The electrode 28, the output amplifier 29, and the two trench isolation region 21. It is different from the conventional one in that the two papers are in 6 grooves. The paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)
548780 A7 3202twf.d〇c/〇〇8 B7 經濟部中央標準局員工消費合作社印裝 五、發明説明（f ) 渠隔離區域21替代習知所使用區域氧化法的隔離區域與 新設計之P型高摻雜區域23。 在結構上，P型半導體基底26中之表面上，依序有n 型光二極體區域24、P型局摻雜區域23、N型輸出浮動區 域25連接。傳輸閘電極22連接在P型高摻雜區域23上 方。N型重設排出區域27，位於P型半導體基底中26之 表面。重設電極28連接於N型輸出浮動區域25與N型重 設排出區域27間的P型半導體基底26上方。輸出放大器 29，連接到N型輸出浮動區域25。兩溝渠隔離區域21， 分別連接P型半導體基底26中之表面的N型光二極體區 域24與N型重設排出區域27。 接著，說明本發明之主動像素感測器結構的動作。首 先，在N型光二極體區域24接受光電能量19，產生一移 動電荷，然後在重設電極28輸入一重設脈衝RG(例如以0 伏特到5伏特變化），控制N型輸出浮動區域25產生排出 電荷移動到N型重設排出區域27，其中，N型重設排出區 域27連接到一外部電壓Vdd(例如5V)。接著，在傳輸閘 電極22輸入一時序脈衝Tx(例如以0伏特到5伏特變化）， 使得Ν型光二極體區域24之移動電荷到Ν型輸出浮動區 域25，其中，在Ν型光—^極體區域24與Ν型輸出浮動區 域25間，因爲有Ρ型高摻雜區域23，使得在Ρ型半導體 基底26與Ρ型高摻雜區域23之間，形成貫穿效果 (Punthrough effect)，議移動電何保持在Ρ型半導體基底中 移動，不會發生習知之Si〇2之阻陷，使得移動電荷傳遞速 7 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家榡準（CNS ) A4規格（210X297公釐） 548780 3202twf.doc/008 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（〔） 度降低。由於，在N型輸出浮動區域25上，產生排出電 荷移動到N型重設排出區域27，使的電壓下降(例如原本 5伏特降低到4伏特），接著，在時序脈衝RG後，接受從 N型光二極體區域24之移動電荷，然後透過輸出放大器29 作用後，輸出作爲感測結果。此外並在兩旁設計以兩溝渠 隔離區域21，用以提供更有效隔離效果，其中，兩溝渠隔 離區域21，例如使用二氧化矽所構成。 本發明之兩溝渠隔離區域方式與P型高摻雜區域設 計，可分別或組合使用，都能分別達到像素陣列密度與傳 遞速度提高的結果，例如使用本發明之P型高摻雜區域與 習知LOCOS之隔離區域結合，皆在本發明之範圍，在此 不再重覆說明。 因此，本發明的特徵爲提供一種主動像素感測器結構， 設計一 P型高摻雜區域，位於N型光二極體區域與N型 輸出浮動區域之間，使得移動電荷保持在P型半導體基底 中移動，避開SiOz之阻陷，所以能夠有效提高傳遞速度。 本發明之另一特徵在提供一種主動像素感測器結構， 以較不佔用使用空間之溝渠隔離方式取代LOCOS之隔離 區域，因此對於像素陣列密度可以大幅提高，對於防止彼 此干擾之隔離效果，也能夠達成相等效果。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 8 ^^尺度適用中國國家標準(CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)548780 A7 3202twf.d〇c / 〇〇8 B7 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (f) Canal isolation area 21 replaces the conventional isolation area used by the area oxidation method and the newly designed P type Highly doped region 23. Structurally, on the surface of the P-type semiconductor substrate 26, an n-type photodiode region 24, a P-type locally doped region 23, and an N-type output floating region 25 are connected in this order. The transmission gate electrode 22 is connected above the P-type highly doped region 23. The N-type reset discharge region 27 is located on the surface of the P-type semiconductor substrate 26. The reset electrode 28 is connected above the P-type semiconductor substrate 26 between the N-type output floating region 25 and the N-type reset discharge region 27. The output amplifier 29 is connected to the N-type output floating region 25. The two trench isolation regions 21 are respectively connected to the N-type photodiode region 24 and the N-type reset discharge region 27 on the surface of the P-type semiconductor substrate 26. Next, the operation of the active pixel sensor structure of the present invention will be described. First, the photoelectric energy 19 is received in the N-type photodiode region 24 to generate a moving charge, and then a reset pulse RG is input to the reset electrode 28 (for example, changes from 0 volts to 5 volts) to control the N-type output floating region 25 to generate The discharged charge moves to the N-type reset discharge region 27, where the N-type reset discharge region 27 is connected to an external voltage Vdd (for example, 5V). Next, a timing pulse Tx is input to the transmission gate electrode 22 (for example, changes from 0 volts to 5 volts), so that the moving charge of the N-type photodiode region 24 is transferred to the N-type output floating region 25. Between the polar body region 24 and the N-type output floating region 25, because there is a P-type highly doped region 23, a Punthrough effect is formed between the P-type semiconductor substrate 26 and the P-type highly doped region 23. Why does the mobile power keep moving in the P-type semiconductor substrate, and the conventional Si0 2 blockage does not occur, making the mobile charge transfer speed 7 (please read the precautions on the back before filling this page) This paper size is applicable to the country of China 榡Standard (CNS) A4 specifications (210X297 mm) 548780 3202twf.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. The discharge charge generated in the N-type output floating region 25 moves to the N-type reset discharge region 27, and the voltage drops (for example, the original 5 volts are reduced to 4 volts). Then, after the timing pulse RG, The moving charge of the photodiode region 24 is then passed through the output amplifier 29 and is output as a sensing result. In addition, two trench isolation areas 21 are designed on both sides to provide a more effective isolation effect. Among them, the two trench isolation areas 21 are made of, for example, silicon dioxide. The two trench isolation region method and the P-type highly doped region design of the present invention can be used separately or in combination, and both can achieve the results of increased pixel array density and transmission speed. For example, the P-type highly doped region and the conventional method of the present invention are used. It is known that the combination of the isolated areas of LOCOS is within the scope of the present invention, and will not be repeated here. Therefore, the feature of the present invention is to provide an active pixel sensor structure. A P-type highly doped region is designed to be located between the N-type photodiode region and the N-type output floating region, so that the moving charge is maintained on the P-type semiconductor substrate. It can move efficiently to avoid the trap of SiOz, so it can effectively improve the transmission speed. Another feature of the present invention is to provide an active pixel sensor structure that replaces the isolation area of LOCOS with a trench isolation method that takes up less space. Therefore, the pixel array density can be greatly increased, and the isolation effect to prevent interference with each other can also be greatly improved. Can achieve the same effect. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. 8 ^^ scale applies to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)