548690 玖、發明說明 (發明說明應欽明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明） 【發明所屬之技術領域】 發明領域 本發明係與一種用於特別是一晶圓之晶圓形物件的主 5表面之界定區域的液體處理裝置和方法有關。 【卞前技術3 發明背景 下述將描述處理特別是一晶圓的晶圓形物件之特定部 份（即接近邊緣之部份）的理由。 10 例如矽晶圓的一晶圓可在所有側面上具有例如一塗覆 之二氧化矽。對於後續程序（當例如一金屬層或一層多晶 矽（多結晶矽）要被施加時），可能需要自晶圓去除至少主表 面的邊緣區域中、及任擇地在其周邊表面及/或第二主表 面之區域中之現有塗覆。這藉由可主要分成乾式蝕刻程序 15和濕式蝕刻程序的蝕刻程序來進行。也可較佳地自半導體 基體之主表面的某些區域去除一金屬（如銅），該金屬係事 先被電鍍施加。在此情形中，此區域可為接近邊緣的一環 狀部伤、或恰為其中沒#結構（即沒有晶片區）的前主表面 之區域（设置有結構的主表面=:元件側）。 10 另一應用係晶圓之清潔。在此可能需要清潔晶圓於至 少主表面之邊緣區域，但任擇地也於其周邊表面及/或第 二主表面之區域，即去除粒子及/或其他污染物。這由濕 式清潔程序來完成。 _ 5 548690 玖、發明說明 另一液體處理方式係層次之施加方式，例如電鍍施加 金屬（電鍍）。此可以在有或沒有電流下完成，後者係為”無 電電鍍”。 本發明係與層次之濕式蝕刻、濕式清潔或濕式化學施 5 加（在液體處理之概念下來組合的）有關。晶圓要處理的表 面部份由處理液體來弄濕，並去除要去除的層次或雜質、 或在此表面部份中建立一層次。 在液體處理期間晶圓形物件可靜止或可旋轉（例如繞 著一轴線）。 10 為了在一未受控制情形中防止處理液體達到不要處理 的表面，EP 0 316 296 B1建議一載體（支架）用一氣體來沖 洗面對該載體、且不要處理的表面。在如此進行時，氣體 在晶圓之邊緣和該載體間排出。 JP 09-181026 A描述用於半導體晶圓的一載體，其在 15 一環狀喷嘴外面具有例如掉離到外面的一環狀階度、或其 邊緣之一斜角的特殊形狀。也可設置一吸入開口。在邊緣 區域中的流速將受此形狀或受此吸入開口之影響（減小）。 這是要用來允許由上部施加的處理液體，流動越過晶圓之 邊緣到面對支架的側面、且處理那裡的一邊緣區域。 20 不管是否採用在EP 0 316 296 B1或JP 09-181026 A(英 文摘要）中所請求之用來配合晶圓形物件（載體或支架）的 裝置，在面對載體的主表面上，最大為1.5mm的邊緣區域( 自晶圓之外侧邊緣測量的）係被處理。其後，液體以晶圓 6 548690 玖、發明說明 邊緣之方向流回、且被它甩掉。在此兩種情形中，此經處 理邊緣區域並非特意界定，而係為一隨機結果，因為該邊 緣區域之大小主要會依據數個彼此互相影響至一些程度的 參數而改變，諸如表面化合物（吸收層之粗糙度、類型和 5 厚度）、溫度、壓力、濕度等等。 美國4,838,289 A揭露用來蝕刻一晶圓之邊緣的系統 ，其中一喷嘴在晶圓旋轉時指向晶圓表面要處理的區域。 此系統的缺點係要處理的區域並非被明確地界定、且液體 可達到不欲處理的區域。 10 【發明内容】 發明之概要 據此，本發明之目的在於使得在一晶圓形物件之表面 上，可以用一液體處理特定部份，且其也可以處理超過 2mm之一邊緣區域（自晶圓形物件之外側邊緣測量的）。此 15特定部份也可為晶圓形物件之表面的内部區域，即不會延 伸到晶圓形物件之邊緣的區域。若在此一區域同時由一圓 圈線侷限至外部及/或内部，則此仍不需要；欲被處理的 區域可由例如多邊形來侷限。此邊界線在晶圓形物件係晶 圓時可對應於設置有晶片的表面之區域（“元件區，，）。據此 2〇 ，内部晶片區或外部無晶片區可被處理。 據此，在其最一般實施例中，本發明提出用於特別是 晶圓的晶圓形物件之一特定部份的液體處理之一裝置，其 包含：固持裝置，用來固持該晶圓形物件；一遮蔽件，其 7 548690 玖、發明說明 在形狀和尺寸上對應於要用液體處理的特定部份之區域； 及區隔器裝置，其把該遮蔽件和該晶圓形物件彼此保持於 一經特定小距離、使得液體可由毛細力來保留在該遮蔽件 和該晶圓形物件之界定區域間。 5 固持裝置尤其可以是真空抓取器、於其周邊側面邊緣 上接觸該晶圓形物件的抓取裝置、或一所謂之伯諾里支架 〇 遮蔽件係被製成使得當一晶圓形物件（晶圓）設置在載 體上時，其不接觸該晶圓形物件（晶圓），即一間隙係維持 10 在晶圓和遮蔽件間。對應到晶圓之主表面上的遮蔽件代表 該晶圓用液體處理的區域。遮蔽件面對該晶圓形物件之表 面的材料應被選擇，以使得它可被液體充分弄濕而使液體 可由毛細力拉入至該晶圓形物件和遮蔽件間的間隙中，並 保持在此間隙内。液體在一方面與該晶圓形物件所呈，且 15 另一方面與遮蔽件所形成的兩弄濕角度之總和應小於180 度，較佳小於150度。在預選的遮蔽件表面中，這當然也 可藉由添加至液體的添加物（濕潤劑）來達成。 本發明中所請求的裝置之一優點係為，欲被處理的物 件係恰好在欲被處理的區域中由處理液體來弄濕，而使此 20 區域不被一固體觸及。同時避免液滴到達不欲被處理或不 應被處理的區域。 在一較佳實施例中，遮蔽件具有一環狀外形。在此情 形中，該環可具有小於該晶圓形物件之外徑的一内徑、及 8 548690 玖、發明說明 至少與該晶圓形物件之外徑同大小的一外徑。這在要處理 的表面同樣具有一例如在自一半導體晶圓之一特定邊緣區 去除一層次之環狀外形時，可能是必要。 若區隔器裝置把遮蔽件和晶圓形物件彼此保持於0.05 5 至1mm之距離則係較佳較佳。當使用諸如水、溶液或配置 在一水溶液中之各種酸的薄液體媒體時，可輕易地避免液 體流出遮蔽件和晶圓形物件間的毛細區域。 在一實施例中區隔器包含直接與晶圓形物件接觸、且 直接或間接連結至遮蔽件的抓取器元件。這可例如由一外 10 部桿件（間接）、或由例如設置在周邊側面上（直接）的插銷 來實施。 在另一實施例中，遮蔽件和固持裝置係彼此相對地靜 止，而相對繞著垂直於該遮蔽件的軸線旋轉。遮蔽件和固 持裝置因而都不旋轉，或者是例如該固持裝置旋轉、而該 15 晶圓形物件係與它一起旋轉，因此遮蔽件係同時以相同速 度來旋轉。當液體維持在遮蔽件和晶圓形物件間的毛細區 域中時，遮蔽件相對於晶圓形物件之表面沒有相對運動， ，在該液體維持在此區域中時，該液體係較佳的儘可能減 少其所經歷之運動。這可避免液體到達不欲由該液體處理 20 的區域内。 區隔器裝置可包含直接或間接連結至遮蔽件、且朝向 晶圓形物件的一氣體饋送裝置，藉此晶圓形物件可保持在 一氣體襯墊上。此氣體饋送裝置可為例如垂直或斜靠設置 9 548690 玖、發明說明 · 於晶圓形物件之表面的一或更多喷嘴、或一環形喷嘴。在 一規格化的氣體饋送裝置之形狀、尺寸、和結構下，藉由 選擇壓力和氣量流率，在氣體饋送裝置和晶圓形物件間的 距離，以及因此在遮蔽件和晶圓形物件間的距離，可精確 5 地和重複地調整。 、 再者，在一實施例中本發明所請求的裝置可具有距離 ·- 改變裝置，其可增加遮蔽件和晶圓形物件彼此間的距離、 使得設置在遮蔽件和晶圓形物件間的液體不再由毛細力來 · 保持。在此它可為一移動機構、其可移動垂直於晶圓形物 10 件之表面的固持裝置，或可據此來移動遮蔽件的一移動機 構。但晶圓形物件也可據此來直接移動。一距離改變裝置 可為例如一額外抓取器（例如鏟子）、或有把晶圓形物件提 升的插銷（提升插銷）。距離改變裝置也可為有一可改變操 作狀態的氣體饋送裝置，以使得晶圓形物件可被提升或下 15 降。 · 遮蔽件和晶圓形物件由此距離隔開裝置而彼此移開， 使得在其間之區域中發現的液體可被移除。距離改變裝置 ‘ 可有利地增加至少0.2mm、較佳至少0.5mm的距離。 - 若距離改變裝置可在液體處理期間或在其之後緊接著 20 改變遮蔽件和晶圓形物件間之距離，則為較佳。這可能是 例如在氣體饋送裝置係作為一距離改變裝置之情況下。 在一實施例中，在距離改變裝置和區隔器裝置可被做 成使得區隔器裝置之元件同時為距離改變裝置之元件。若 10 548690 玖、發明說明 . 區隔裔裝置於周邊俯面上具有含有接觸晶圓形物件、並因 此把它保持於距遮时—肢距離之對應凹σ的插銷時， 則這些插銷在它們垂直於晶圓形物件之表面移動時，同時 可為距離改變裝置之元件。 5 在一實施例中，在基本上垂直於晶圓形物件之主表面 、 處，•具有在周遭側面上侷限晶圓形物件於周遭側面上之位 ' 置的導引元件。如此，在位移量上該晶圓形物件之位置係 對遮蔽件固疋。導引元件至一晶圓形物件之中心的距離可 泰 以改變。 10 此距離也可縮減至一小數量，以使得導引，先件可固設…一一 晶圓形物件，而它們在此態樣中也係為固持裝置之一元件 。固持裝置也可包含導引元件及一氣體饋送裝置。 在如申請專利範圍第8項中所請求的裝置中，其中距 離改變裝置包含直接或間接連接至遮蔽件且指向物件之主 15表面的一氣體饋送裝置，晶圓形物件可固持在一氣體襯墊 · 上。在此，氣體饋送裝置無需同時為區隔器裝置，因為區 隔器裝置可為一簡單機械支架（如插銷、區隔器環）、且氣 體饋送裝置只在晶圓形物件被提升時才饋送氣體。 但區隔器裝置和距離改變裝置也可基本上為相同氣體 20 饋送裝置，可由氣體饋送裝置所提供之裝置，切換到至少 兩不同操作狀態。藉由這些至少兩不同操作狀態，可在晶 圓形物件和遮蔽件間的設定至少兩不同距離。這些裝置係 例如可改變供應到氣體饋送裝置的氣體之壓力及/或流量 11 548690 玖、發明說明 的裝置。這些裝置係例如縮減閥門或打開和關閉氣體饋送 裝置之額外喷嘴的閥門。在一較高流量處，晶圓形物件會 呈現比在一較低流量大的對遮蔽件距離。其他裝置可改變 氣體饋送裝置之尺寸、形狀及/或校準。若例如使用可移 5動喷嘴，晶圓形物件越會劇烈地提升，則在喷嘴所對準處 與喷嘴所指之晶圓形物件的表面之間的角度（0至90度）越大 〇 區隔器裝置和距離改變裝置也可為可彼此分開啟動的 兩氣體饋送裝置。 10 在一實施例中，固持裝置可藉由晶圓形物件的旋轉而 跟著旋轉。即使這是不必要，但因為處理液體可自載體及 自晶圓邊緣兩者甩掉，而為較佳。 在實施例中的遮蔽件和晶圓形物件間之此間隙為005 至1mm，較佳地0.1至0.5mm。因此，在晶圓和氣體導引裝 15置間會形成一種毛細形式，藉此，繞著晶圓邊緣流動的液 體會被吸入。面對氣體導引裝置且由液體弄濕的表面之内 徑’係小於氣體導引裝置之環形表面的内徑。 當氣體導引裝置面對晶圓形物件之表面係平行於晶圓 形物件之主表面時係較佳。因此在整個邊緣區中，在晶圓 2〇形物件（晶圓）和氣體導引裝置間的間隙，係為相同尺寸。 一實施例要求載體能夠旋轉。即使這是不必要的，但 因為處理液體可自載體及自晶圓邊緣兩者甩掉，而為較佳 。若載體在液體處理期間不旋轉，則液體可以一氣流（來 12 548690 玖、發明說明 自一氣體饋送裝置）吹走。 另外，裝置可具有指向晶圓形物件面對遮蔽件之表面 的一液體管線。如此，具有不以第一液體來處理的特定第 一區之表面，也可用一第二液體且係在與第一者不同的第 5 —區中進行處理。此第二區外形可為面積較大、且完全覆 蓋該第一區。若第一液體係例如一蝕刻液，則它可使用第 二液體（如去離子水）而不殘留地自面對遮蔽件的表面上被 去除。同時，遮蔽件也可被清潔或可自其去除液體。 本發明之下述實施例所產生的本發明之其他細節、特 10 徵、和優點係顯示在該等圖式中。 圖式之簡單描述 第1-5圖構造地顯示如本發明中所請求的不同實施例 之軸向剖面圖5。 第6-8圖顯示在不同操作狀態中，如第1圖所顯示的一 15 實施例之概要軸向剖面圖。 【實施方式3 較佳實施例之詳細描述 第1圖顯示如發明中請求的裝置1之一實施例。裝置i 包括同心地附有在此具有一環形遮蔽件2之基本圓形基體4 20 。但環形件2也可超出基體。環形件2具有較大的外徑、及 小於晶圓之外徑的一内徑。安裝在環形件4上的插銷3把晶 圓W固持在周邊侧面上。插銷3具有鎖入晶圓邊緣、且因 此把晶圓保持在一特定水平位置中的一凹口 31。含有凹口 13 548690 玖、發明說明 31的插銷3代表遮蔽件2之區隔器裝置。在遮蔽件2和晶圓 表面Wf間一特定間隙15因此建立。插銷3經由未顯示的一 機構、相對於軸線A來移動，以牢固地抓住晶圓並移除或 提升該晶圓而將其再次釋放。在基體4内有一提升機構5( 5 距離改變裝置），其可以箭頭之方向L來向上和向下移動、 且可改變晶圓W和遮蔽件2間的距離。提升機構包含一載 體，其具有平行於晶圓、面對晶圓的一基本平坦表面，且 其在載體被提升時、只接觸晶圓之下表面Wf且然後提升 晶圓。晶圓可與整個裝置1一起繞著晶圓軸線A來旋轉。 10 處理液體可由安裝在晶圓邊緣附近外面的喷嘴7、或 由指向面離遮蔽件的晶圓表面Wb之一喷嘴6來施加。在第 一情形（喷嘴7)中，一液體量20係直接施於遮蔽件2靠近晶 圓邊緣處。液體然後由類毛細間隙15拉入，且因此精確地 弄濕晶圓表面Wf與遮蔽件2對齊且重疊之區域。在第二情 15 形（喷嘴6)中，一液體量18係被施於例如在其中央之面離遮 蔽件2的表面Wf，該液體然後徑向地流到晶圓邊緣外面； 此可由晶圓之旋轉來進行。在其上，液體繞著晶圓邊緣來 流動並被間隙15拉入。在此兩種情形中，晶圓可在整個液 體處理（R)期間旋轉；這種情況具有不滲透到間隙15中的 20 過量液體，不會不受控制地向下流至遮蔽件上方係而以受 控制方式被甩掉的優點。然後一第二液體（如去離子水）可 經由液體管線28而施加於面對遮蔽件2之晶圓表面Wf，同 時旋轉載體4、藉此第二液體替換位於間隙15中的液體。 14 548690 玖、發明說明 . 同時，在此之前或甚至於其後，可使用提升機構5來提升 晶圓。 第2圖顯示另一實施例。遮蔽件2(環形件）由碟片8來 支持。晶圓W由在其面離遮蔽件的表面wb上的一旋轉真 5空支架13來固持。這種情況下，具有晶圓邊緣和面對遮蔽 、 件之/曰圓表面Wf都不會被接觸的優點。固持晶_ w的支架 ' 13及遮蔽件兩者可繞著相同軸線a來轉動，支架以方向Rw 且遮蔽件以方向Rm。若其等係以相同轉速和相同方向來 籲 貫她的活’則遮件和晶圓係不會彼此相對地移動 10 (Rw=Rm)。支架13和遮蔽件2可經由距離改變裝〔置5來彼此一一 連接’並藉此彼此相離和相向地移動（箭頭L)。此距離改 變裝置5可為例如一氣動汽缸或一轉軸。使用此距離改變 裝置5，可適當地設定在晶圓和遮蔽件間的間隙15，因此 它可同時為一區隔器裝置。喷嘴7把一液體量2〇直接施於 15遮蔽件2靠近晶圓邊緣處。液體然後被類毛細間隙15拉入 _ 〇 第3圖顯示一第三實施例。裝置1包含一浸浴槽27 ,其 中有一鍋形載體24。載體内的空間23被相對於該浸缸26密 — 封’並設置在載體和浸浴槽間。載體24可使用提升機構而 2〇自浸缸26提升。載體之上邊緣具有相當於遮蔽件的一環形 件2之形狀，其具有面對晶圓冒、且平行於其表面wf之一 表面。在此環形件2(遮蔽件）上具有將晶圓維持於距遮蔽件 一特定距離的凹口之插銷3，藉此一間隙15形成。其上設 15 548690 玖、發明說明 有晶圓W的載體2係被降低到浸缸（L1)中，使得液體水平 位於環形件上方，而使晶圓邊緣被弄濕。液體被毛細力 拉至晶圓和遮蔽件間的間隙15中。為了防止液體因其中 的負壓力而滲透到載體内的空間23中，該空間經由管件 5 25而連接到大氣。一稍微過度壓力也可經由載體内的空 間23,中的該管件25來建立，且該載體可再度提升出浸缸 (L1)。在液體處理後，設在間隙丨5中的液體使用已由已透 過管件25所供應之氣體建立的較強過度壓力、而徑向地 推到外面。間隙15也可用距離改變裝置5來加大。在此顯 10 示可向上和向下移動的四支插銷；它們可接該晶圓在 遮蔽件所面對的遮蔽件2内的表面上之晶圓，且可把它垂 直地提升（L2)。 第4圖顯示一第四實施例。該裝置包含其中設有處理 液體、且可向上行向下移動（箭頭L1)之浸缸26、一載體11 15 。該載體11包含一基體4和一模造在下方的一環形件2。製 造在此環形件2(遮蔽件）之下方的具有凹口的插銷3，將環 形件2以一特定間隙距離把晶圓w固持在周邊側面上，以 使得晶圓懸掛在載體下方的水平位置中。載體1丨與晶圓w 一起浸入浸缸中，使得液體水平弄濕環形件2、且因此晶 20圓面離環形件之表面Wb，且周邊側面晶圓邊緣被完全弄 濕。液體滲透到晶圓和環形件間的間隙内。載體在處理 後升出浸缸。安裝在載體内的一真空拾取器5向下移動， 使付它接觸並在晶圓面對遮蔽件之表面Wf上吸住晶圓。 16 548690 玖、發明說明 其後晶圓用拾取器來進一步下移，藉此克服將液體被保持 在間隙15内的毛細力。藉由旋轉拾取器，殘留在晶圓上的 液體可被甩掉。 第5圖顯示一實施例。該裝置包括具有一基體4的一載 5 體11、及經由於至基體的一距離之區隔器41而附在後者上 的一環形件2。在環形件2上附加插銷53，其可相對於載體 11之旋轉A軸，而徑向地移動到外面，且可環繞在晶圓W 周邊側面上。插銷53具有一小圓柱形狀，其軸線垂直於晶 圓之表面。氣體通道44和45被設於基體4中，且它們排放 10 至朝向該晶圓面對載體11之表面的氣體喷嘴46和49。喷嘴 46和49係傾斜向外地設置在外側，喷嘴49係較不傾斜地設 置於較傾斜的更外側喷嘴46之内側，即噴嘴46排出的氣體 流G1以較該喷嘴更内側的排出氣體流G 2更為平坦之角度 接觸晶圓表面。在内側和外側喷嘴49和46間的區域48中， 15 該基體4至晶圓W之距離小於在外側喷嘴4 6外面之區域4 7 。置於内側的喷嘴49及置於外側的喷嘴46兩者，都可選擇 性地為配置在一圓圈上的多個喷嘴、或可具有環形喷嘴之 形狀。 此裝置基本上可以兩不同方式來操作。在第一操作模 20 式中，外部氣體流G1和内部氣體流G2可彼此分別來打開 和關閉。若只有第一氣體流G1被打開，則氣體只流到區域 47上方。晶圓W指稍微提升，藉此一小的類毛細間隙15形 成於遮蔽件2和晶圓W間。若在此第一操作狀態中，施加 17 548690 玖、發明說明 31的插銷3代表遮蔽件2之區隔器裝置。在遮蔽件2和晶圓 表面Wf間一特定間隙15因此建立。插銷3經由未顯示的一 機構、相對於軸線A來移動，以牢固地抓住晶圓並移除或 提升該晶圓而將其再次釋放。在基體4内有一提升機構5( 5距離改變裝置），其可以箭頭之方向L來向上和向下移動、 且可改變晶圓W和遮蔽件2間的距離。提升機構包含一載 體’其具有平行於晶圓、面對晶圓的一基本平坦表面，且 其在載體被提升時、只接觸晶圓之下表面Wf且然後提升 晶圓。晶圓可與整個裝置1一起繞著晶圓軸線A來旋轉。 10 處理液體可由安裝在晶圓邊緣附近外面的喷嘴7、或 由指向面離遮蔽件的晶圓表面Wb之一喷嘴6來施加。在第 一情形（喷嘴7)中，一液體量20係直接施於遮蔽件2靠近晶 圓邊緣處。液體然後由類毛細間隙15拉入，且因此精確地 弄濕晶圓表面Wf與遮蔽件2對齊且重疊之區域。在第二情 15开)（喷嘴6)中，一液體量18係被施於例如在其中央之面離遮 蔽件2的表面Wf，該液體然後徑向地流到晶圓邊緣外面； 此可由晶圓之旋轉來進行。在其上，液體繞著晶圓邊緣來 流動並被間隙15拉入。在此兩種情形中，晶圓可在整個液 體處理（R)期間旋轉；這種情況具有不滲透到間隙15中的 20 過量液體，不會不受控制地向下流至遮蔽件上方係而以受 控制方式被甩掉的優點。然後一第二液體（如去離子水）可 經由液體管線28而施加於面對遮蔽件2之晶圓表面Wf，同 時旋轉載體4、藉此第二液體替換位於間隙15中的液體。 14 548690 玖、發明說明548690 发明 Description of the invention (The description of the invention should be made clear: the technical field to which the invention belongs, the prior art, the content, the embodiments, and the drawings are brief descriptions.) [Technical field to which the invention belongs] Field of the invention The present invention relates to a method used for a crystal. A liquid processing device and method for a defined area of the main 5 surface of a round crystal round object. [Previous Technology 3 Background of the Invention The reason for processing a specific portion (i.e., a portion near the edge) of a wafer-shaped object, particularly a wafer, will be described below. 10 A wafer, such as a silicon wafer, may have, for example, a coated silicon dioxide on all sides. For subsequent procedures (for example when a metal layer or a polycrystalline silicon (polycrystalline silicon) is to be applied), it may be necessary to remove at least the major surface edge region from the wafer, and optionally on its peripheral surface and / or the second Existing coating in the area of the main surface. This is performed by an etching process which can be mainly divided into a dry etching process 15 and a wet etching process. It is also preferable to remove a metal (e.g., copper) from some areas of the main surface of the semiconductor substrate, which metal is previously applied by plating. In this case, this area may be a ring wound near the edge, or an area that is the front main surface without the # structure (ie, no wafer area) (the main surface provided with the structure =: component side). 10 Another application is wafer cleaning. Here it may be necessary to clean the edge area of at least the major surface of the wafer, but optionally also the area of its peripheral surface and / or the second major surface, ie to remove particles and / or other contaminants. This is done by a wet cleaning procedure. _ 5 548690 发明, description of the invention Another liquid treatment method is a layered application method, such as electroplating to apply metal (electroplating). This can be done with or without current, the latter being "electroless plating". The present invention relates to a layer of wet etching, wet cleaning or wet chemical application (combined under the concept of liquid treatment). The surface portion of the wafer to be processed is wetted by the processing liquid, and the layer or impurities to be removed are removed, or a layer is established in the surface portion. The crystalline circular object may be stationary or rotatable (e.g., about an axis) during liquid processing. 10 In order to prevent the treatment liquid from reaching untreated surfaces in an uncontrolled situation, EP 0 316 296 B1 recommends that a carrier (bracket) be used to flush the surface facing the carrier with no treatment. In doing so, gas is vented between the edge of the wafer and the carrier. JP 09-181026 A describes a carrier for a semiconductor wafer, which has a special shape outside a ring-shaped nozzle, such as a ring-shaped step falling to the outside, or an oblique angle of one of its edges. A suction opening may also be provided. The velocity in the edge area will be affected (decreased) by this shape or by this suction opening. This is to allow the processing liquid applied from the top to flow across the edge of the wafer to the side facing the support and to process an edge area there. 20 Regardless of whether the device requested in EP 0 316 296 B1 or JP 09-181026 A (in English) is used to fit a crystal-shaped object (carrier or support), the maximum on the main surface facing the carrier is A 1.5mm edge area (measured from the outside edge of the wafer) was processed. Thereafter, the liquid flowed back in the direction of the edge of the wafer 6 548690 Torr, and was thrown away by it. In both cases, the processed edge area is not intentionally defined, but is a random result, because the size of the edge area will mainly change based on several parameters that affect each other to some extent, such as surface compounds (absorption Layer roughness, type and thickness), temperature, pressure, humidity, etc. US 4,838,289 A discloses a system for etching the edges of a wafer, in which a nozzle is directed at an area to be processed on a wafer surface as the wafer is rotated. The disadvantage of this system is that the area to be treated is not clearly defined and the liquid can reach areas that are not to be treated. [Summary of the Invention] SUMMARY OF THE INVENTION Accordingly, the object of the present invention is to enable a specific part to be treated with a liquid on the surface of a crystal circular object, and it can also process an edge area (self-crystal) exceeding 2 mm. Measured on the outer edges of round objects). These 15 specific parts may also be the inner area of the surface of the crystalline round object, that is, the area that does not extend to the edge of the crystalline round object. If the area is confined by a circle line to the outside and / or inside at the same time, this is not necessary; the area to be processed can be confined by, for example, a polygon. This boundary line may correspond to the area where the surface of the wafer is provided when the wafer-shaped object is a wafer ("element area,"). Accordingly, the inner wafer area or the outer wafer-free area may be processed. Accordingly, In its most general embodiment, the present invention proposes a device for liquid treatment of a specific portion of a crystalline circular object, particularly a wafer, comprising: a holding device for holding the crystalline circular object; Covering member, 7 548690 690, description of the area corresponding in shape and size to a specific portion to be treated with a liquid; and a spacer device that holds the covering member and the crystalline circular object to each other at a specific time A small distance, so that liquid can be retained by the capillary between the shielding member and the defined area of the crystalline round object. 5 The holding device may be a vacuum gripper, in particular, a gripper that contacts the crystalline round object on its peripheral side edges. The taking device, or a so-called Bernoulli holder. The shielding is made so that when a crystal round object (wafer) is placed on the carrier, it does not contact the crystal round object (wafer), that is, a Gap system Maintain 10 between the wafer and the mask. The mask corresponding to the main surface of the wafer represents the area where the wafer is treated with liquid. The material of the surface of the mask facing the crystalline round object should be selected so that It can be sufficiently wetted by the liquid so that the liquid can be drawn into the gap between the crystal-shaped object and the shielding member by capillary force and held in the gap. The liquid is presented on the one hand with the crystal-shaped object, and 15 On the other hand, the sum of the two wetting angles formed by the shield should be less than 180 degrees, preferably less than 150 degrees. In the surface of the pre-selected shield, this can of course also be achieved by additives (humectants) added to the liquid One of the advantages of the device claimed in the present invention is that the object to be treated is wetted by the treatment liquid in the area to be treated, so that these 20 areas are not touched by a solid. At the same time Avoid droplets from reaching areas that are not to be treated or should not be treated. In a preferred embodiment, the shield has an annular shape. In this case, the ring may have an outer diameter smaller than that of the crystalline circular object An inner diameter of, and 8 548690 发明, invention description An outer diameter at least the same size as the outer diameter of the crystalline circular object. This also has a ring-shaped contour on the surface to be treated, for example, removing a layer from a specific edge region of a semiconductor wafer It may be necessary. It is better if the separator device keeps the shield and the round object at a distance of 0.05 5 to 1 mm from each other. When using such acids as water, solution or various acids in an aqueous solution When the thin liquid medium is used, the liquid can easily be prevented from flowing out of the capillary region between the shield and the crystal-shaped object. In one embodiment, the separator includes a contact directly with the crystal-shaped object and directly or indirectly connected to the shield. Grabber element. This can be implemented, for example, by an outer 10 rods (indirect), or by, for example, latches provided on the peripheral side (direct). In another embodiment, the shield and the holding device are opposite each other The ground is stationary and relatively rotates about an axis perpendicular to the shield. As a result, neither the shield nor the holding device rotates, or, for example, the holding device rotates, and the 15-crystal circular object rotates with it, so the cover rotates at the same speed at the same time. When the liquid is maintained in the capillary region between the shielding member and the crystalline circular object, the shielding member does not have relative movement with respect to the surface of the crystalline circular object. When the liquid is maintained in this region, the liquid system is better. May reduce the amount of exercise they experience. This prevents liquids from reaching areas that are not intended to be treated by the liquid 20. The spacer device may include a gas feeding device that is directly or indirectly connected to the shield and faces the crystalline circular object, whereby the crystalline circular object can be held on a gas cushion. This gas feeding device may be, for example, a vertical or oblique arrangement 9 548690 玖, invention description · One or more nozzles on the surface of a crystal circular object, or a ring nozzle. Under a normalized shape, size, and structure of the gas feeding device, by selecting pressure and gas flow rate, the distance between the gas feeding device and the crystal-shaped object, and therefore between the shield and the crystal-shaped object The distance can be adjusted exactly 5 times and repeatedly. Further, in an embodiment, the device requested by the present invention may have a distance-changing device, which may increase the distance between the shielding member and the crystalline circular object, so that the distance between the shielding member and the crystalline circular object is increased. The liquid is no longer held by capillary forces. Here, it may be a moving mechanism, a holding device that can move perpendicularly to the surface of 10 pieces of crystal round objects, or a moving mechanism that can move the shielding member accordingly. But crystal round objects can also be moved directly. A distance changing device may be, for example, an extra gripper (e.g., a shovel), or a latch (lifting latch) having a crystal round object to be lifted. The distance changing device may also be a gas feeding device which can change the operating state, so that the crystalline circular object can be lifted or lowered. · The shield and the crystal-shaped object are moved away from each other by the distance separating device, so that the liquid found in the area therebetween can be removed. The distance changing means ′ may advantageously increase a distance of at least 0.2 mm, preferably at least 0.5 mm. -It is better if the distance changing device can change the distance between the shield and the crystal-shaped object during or immediately after the liquid treatment. This may be the case, for example, when the gas feeding device is used as a distance changing device. In one embodiment, the distance changing device and the spacer device may be made such that the elements of the spacer device are the components of the distance changing device at the same time. If 10 548690 发明, description of the invention. When the segmented device has a pin on the peripheral top surface that contains a contact crystal round object, and therefore holds it at a distance from the shadow-limb distance corresponding to the concave σ, these pins are in their When moving perpendicular to the surface of the crystal circular object, it can be a component of the distance changing device at the same time. 5 In one embodiment, at a position substantially perpendicular to the main surface of the crystalline circular object, there is a guide element that limits the position of the crystalline circular object on the peripheral side. In this way, the position of the crystal circular object in the displacement amount is fixed to the shielding member. The distance from the guide element to the center of a crystal round object can be changed. 10 This distance can also be reduced to a small number, so that the guide, the first piece can be fixed ...-a circular object, and they are also a component of the holding device in this form. The holding device may also include a guide element and a gas feeding device. In the device as claimed in item 8 of the scope of patent application, wherein the distance changing device includes a gas feeding device directly or indirectly connected to the shield and pointing at the surface of the main 15 of the object, the crystalline circular object can be held on a gas liner On the pad. Here, the gas feeding device does not need to be a separator device at the same time, because the separator device can be a simple mechanical support (such as a latch, a separator ring), and the gas feeding device only feeds when the crystal-shaped object is lifted. gas. However, the separator device and the distance changing device can also be basically the same gas 20 feeding device, and the device provided by the gas feeding device can be switched to at least two different operating states. With these at least two different operating states, at least two different distances can be set between the crystalline object and the shield. These devices are, for example, devices which can change the pressure and / or flow rate of the gas supplied to the gas feed device 11 548690 玖, the invention description. These devices are, for example, valves that reduce valves or open and close additional nozzles of the gas feeding device. At a higher flow rate, the crystalline round object will exhibit a greater distance to the shield than at a lower flow rate. Other devices can change the size, shape, and / or calibration of the gas feed device. If, for example, a movable 5-moving nozzle is used, the more sharply the round object rises, the greater the angle (0 to 90 degrees) between the point where the nozzle is aligned and the surface of the round object pointed by the nozzle. The divider device and the distance changing device may also be two gas feeding devices that can be activated separately from each other. 10 In one embodiment, the holding device can be rotated by the rotation of the crystal-shaped object. Even if this is unnecessary, it is preferable because the processing liquid can be thrown away from both the carrier and the wafer edge. The gap between the shielding member and the crystalline circular object in the embodiment is 005 to 1 mm, preferably 0.1 to 0.5 mm. Therefore, a capillary form is formed between the wafer and the gas guide device, whereby the liquid flowing around the edge of the wafer is sucked. The inner diameter of the surface facing the gas guide and wetted by the liquid is smaller than the inner diameter of the annular surface of the gas guide. It is preferred when the surface of the gas guide device facing the crystalline circular object is parallel to the main surface of the wafer-shaped object. Therefore, the gap between the 20-shaped object (wafer) and the gas guiding device in the entire edge region is the same size. One embodiment requires the carrier to be able to rotate. Even if this is unnecessary, it is better because the processing liquid can be thrown away from both the carrier and from the edge of the wafer. If the carrier does not rotate during the liquid treatment, the liquid can be blown away by a gas stream (12,548,690 玖, description of the invention from a gas feed device). Alternatively, the device may have a liquid line directed to the surface of the crystalline circular object facing the shield. In this way, a surface having a specific first region that is not treated with the first liquid can also be treated with a second liquid and in a 5th region different from the first. The shape of the second region may be relatively large and completely cover the first region. If the first liquid system is, for example, an etchant, it can be removed from the surface facing the shielding member using a second liquid (such as deionized water) without residue. At the same time, the shield can be cleaned or liquid can be removed therefrom. Other details, features, and advantages of the invention resulting from the following embodiments of the invention are shown in the drawings. Brief Description of the Drawings Figures 1-5 structurally show an axial sectional view 5 of a different embodiment as claimed in the present invention. Figures 6-8 show a schematic axial cross-sectional view of a 15 embodiment as shown in Figure 1 in different operating states. [Embodiment 3 Detailed Description of the Preferred Embodiment FIG. 1 shows an embodiment of the device 1 as requested in the invention. The device i comprises a substantially circular base body 4 20 concentrically attached with an annular shield 2 here. However, the ring 2 can also extend beyond the base body. The ring member 2 has a larger outer diameter and an inner diameter smaller than the outer diameter of the wafer. The pin 3 mounted on the ring member 4 holds the wafer W on the peripheral side. The latch 3 has a notch 31 which is locked into the edge of the wafer and thus holds the wafer in a specific horizontal position. The latch 3 containing the notch 13 548690 玖, invention description 31 represents the partition device of the shield 2. A specific gap 15 is thus established between the shield 2 and the wafer surface Wf. The latch 3 is moved relative to the axis A via a mechanism not shown to firmly grasp the wafer and remove or lift the wafer to release it again. There is a lifting mechanism 5 (5 distance changing device) in the base body 4, which can be moved up and down in the direction of the arrow L, and the distance between the wafer W and the shielding member 2 can be changed. The lifting mechanism includes a carrier having a substantially flat surface parallel to the wafer and facing the wafer, and when the carrier is lifted, it only contacts the lower surface Wf of the wafer and then lifts the wafer. The wafer can be rotated around the wafer axis A together with the entire apparatus 1. 10 The processing liquid may be applied by a nozzle 7 mounted outside the vicinity of the edge of the wafer, or by a nozzle 6 which is directed away from the wafer surface Wb of the shield. In the first case (nozzle 7), a liquid amount 20 is applied directly to the shield 2 near the edge of the wafer. The liquid is then pulled in by the capillary-like gap 15 and thus accurately wets the area where the wafer surface Wf is aligned with the shield 2 and overlaps. In the second case 15 (nozzle 6), a liquid amount 18 is applied to, for example, the surface Wf of the shielding member 2 at its central surface, and the liquid then flows radially outside the edge of the wafer; The rotation of the circle is performed. Above it, liquid flows around the edge of the wafer and is drawn in by the gap 15. In both cases, the wafer can be rotated during the entire liquid handling (R); this case has an excess of 20 that does not penetrate into the gap 15 and does not flow down uncontrollably above the shield to The advantage of being controlled away. A second liquid (e.g., deionized water) can then be applied to the wafer surface Wf facing the shield 2 via the liquid line 28, while rotating the carrier 4, thereby replacing the liquid in the gap 15 with the second liquid. 14 548690 发明, description of the invention. At the same time, before or even afterwards, the lifting mechanism 5 can be used to lift the wafer. Figure 2 shows another embodiment. The shielding member 2 (annular member) is supported by the disc 8. The wafer W is held by a rotating blank holder 13 on a surface wb facing away from the shielding member. In this case, there is an advantage that the edge of the wafer and the facing surface and the round surface Wf of the part are not contacted. Both the bracket '13 holding the crystal_w and the shielding member can be rotated about the same axis a, the bracket is in the direction Rw and the shielding member is in the direction Rm. If their system calls on her work at the same speed and direction, the cover and wafer system will not move relative to each other 10 (Rw = Rm). The bracket 13 and the shielding member 2 can be connected to each other one by one through the distance changing device 5 and thereby move away from each other and toward each other (arrow L). This distance changing device 5 may be, for example, a pneumatic cylinder or a rotating shaft. With this distance changing device 5, the gap 15 between the wafer and the shield can be set appropriately, so it can be a spacer device at the same time. The nozzle 7 applies a liquid amount 20 directly to the 15 shield 2 near the edge of the wafer. The liquid is then drawn into the capillary-like gap 15 _ ○ Figure 3 shows a third embodiment. The device 1 comprises a bath 27 with a pot-shaped carrier 24 therein. The space 23 in the carrier is sealed with respect to the immersion tank 26 and is provided between the carrier and the bath. The carrier 24 may be lifted from the dip tank 26 using a lifting mechanism. The upper edge of the carrier has a shape corresponding to a ring member 2 of a shielding member, which has a surface facing the wafer and parallel to the surface wf thereof. The ring member 2 (shielding member) is provided with a pin 3 for maintaining a wafer at a certain distance from the shield member, whereby a gap 15 is formed. It has 15 548690 上 on it. Description of the invention The carrier 2 with wafer W is lowered into the immersion tank (L1) so that the liquid level is located above the ring and the edges of the wafer are wet. The liquid is drawn by capillary force into the gap 15 between the wafer and the shield. In order to prevent the liquid from penetrating into the space 23 in the carrier due to the negative pressure therein, the space is connected to the atmosphere through the pipe 5 25. A slight excess pressure can also be established via the tube 25 in the space 23, inside the carrier, and the carrier can be lifted out of the immersion tank (L1) again. After the liquid treatment, the liquid set in the gap 5 is pushed radially outward using a strong excessive pressure that has been established by the gas that has been supplied through the pipe 25. The gap 15 can also be enlarged by the distance changing device 5. Shown here are four pins that can be moved up and down; they can be connected to the wafer on the surface of the shield 2 facing the shield, and can be lifted vertically (L2) . Figure 4 shows a fourth embodiment. The device comprises an immersion tank 26 in which a processing liquid is arranged and can be moved upward and downward (arrow L1), and a carrier 11 15. The carrier 11 includes a base body 4 and a ring 2 molded underneath. A recessed pin 3 is manufactured below the ring 2 (shielding member), and the wafer 2 is held on the peripheral side by a specific gap distance, so that the wafer is suspended in a horizontal position under the carrier in. The carrier 1 丨 is immersed in the immersion tank together with the wafer w, so that the liquid horizontally wets the ring member 2, and thus the circular surface of the crystal 20 is away from the surface Wb of the ring member, and the peripheral wafer edge is completely wetted. The liquid penetrates into the gap between the wafer and the ring. The carrier is lifted out of the immersion tank after processing. A vacuum pickup 5 mounted in the carrier is moved downward to bring it into contact and suck the wafer on the wafer-facing surface Wf of the wafer. 16 548690 发明, description of the invention Thereafter, the wafer is further moved down by a picker, thereby overcoming the capillary force that holds the liquid in the gap 15. By rotating the picker, the liquid remaining on the wafer can be thrown away. Figure 5 shows an embodiment. The device comprises a carrier 5 having a base 4 and a ring 2 attached to the latter via a spacer 41 at a distance from the base. A pin 53 is attached to the ring member 2 and can move radially to the outside relative to the rotating A axis of the carrier 11 and can surround the peripheral side of the wafer W. The latch 53 has a small cylindrical shape with its axis perpendicular to the surface of the crystal circle. Gas channels 44 and 45 are provided in the base body 4 and they discharge 10 to the gas nozzles 46 and 49 facing the surface of the wafer facing the carrier 11. The nozzles 46 and 49 are arranged obliquely and outwardly on the outside, and the nozzle 49 is arranged less obliquely inside the more obliquely more outer nozzle 46, that is, the gas flow G1 discharged from the nozzle 46 is a gas flow G 2 which is more inside than the nozzle. A flatter angle contacts the wafer surface. In the area 48 between the inner and outer nozzles 49 and 46, the distance from the substrate 4 to the wafer W is smaller than the area 47 outside the outer nozzle 46. Both the nozzle 49 placed on the inside and the nozzle 46 placed on the outside may optionally be a plurality of nozzles arranged on a circle or may have the shape of a ring-shaped nozzle. This device can basically be operated in two different ways. In the first operation mode 20, the external gas flow G1 and the internal gas flow G2 can be opened and closed separately from each other. If only the first gas flow G1 is turned on, the gas flows only above the region 47. The wafer W is raised slightly, whereby a small capillary-like gap 15 is formed between the shield 2 and the wafer W. If, in this first operating state, 17 548690 施加 is applied, the latch 3 of the invention description 31 represents the spacer device of the shield 2. A specific gap 15 is thus established between the shield 2 and the wafer surface Wf. The latch 3 is moved relative to the axis A via a mechanism not shown to firmly grasp the wafer and remove or lift the wafer to release it again. There is a lifting mechanism 5 (5 distance changing device) in the base body 4, which can be moved up and down in the direction of the arrow L, and the distance between the wafer W and the shielding member 2 can be changed. The lifting mechanism includes a carrier 'having a substantially flat surface parallel to the wafer and facing the wafer, and when the carrier is lifted, it only contacts the lower surface Wf of the wafer and then lifts the wafer. The wafer can be rotated around the wafer axis A together with the entire apparatus 1. 10 The processing liquid may be applied by a nozzle 7 mounted outside the vicinity of the edge of the wafer, or by a nozzle 6 which is directed away from the wafer surface Wb of the shield. In the first case (nozzle 7), a liquid amount 20 is applied directly to the shield 2 near the edge of the wafer. The liquid is then pulled in by the capillary-like gap 15 and thus accurately wets the area where the wafer surface Wf is aligned with the shield 2 and overlaps. In the second case 15) (nozzle 6), a liquid amount 18 is applied to, for example, the surface Wf of the shielding member 2 at its central surface, and the liquid then flows radially outside the edge of the wafer; The rotation of the wafer is performed. Above it, liquid flows around the edge of the wafer and is drawn in by the gap 15. In both cases, the wafer can be rotated during the entire liquid handling (R); this case has an excess of 20 that does not penetrate into the gap 15 and does not flow down uncontrollably above the shield to The advantage of being controlled away. A second liquid (e.g., deionized water) can then be applied to the wafer surface Wf facing the shield 2 via the liquid line 28, while rotating the carrier 4, thereby replacing the liquid in the gap 15 with the second liquid. 14 548690 玖, description of the invention
Wb、或直接施於晶圓邊緣。部份液體進入間隙15(F2)。液 體之過多部份F1向下流、且在遮蔽件及/或晶圓旋轉時被 甩掉。液體不能流到比遮蔽件2之内侧輪廓更遠的内部， 即它只穿透到點P。在遮蔽件2和晶圓間的距離al，係被選 5 擇成小得液體可由間隙15内的毛細力所保持，並在該處來 處理晶圓表面。一提升機構5現在與面對遮蔽件2的晶圓表 面Wf接觸，插銷3現在張開（B)且提升機構5把晶圓升起、 使得在間隙15中的液膜破裂，且只有更多液滴16留在遮蔽 件上及/或在晶圓表面上。這些液滴16現在可被滌除、吹 10 掉及/或甩掉。 I：圖式簡單說明3 第1-5圖構造地顯示如本發明中所請求的不同實施例 之軸向剖面圖5。 第6-8圖顯示在不同操作狀態中如第1圖所顯示的一 15 實施例之概要軸向剖面圖。 【圖式之主要元件代表符號表】 1··錢 11··讎 2··ί新繼件、賴牛 13"鄉 3、53"働 15···間隙 4"羞體、截體 18、20-该體4 23…麵 6、7、46、49··啥嘴 24··搬 8"碟片 25..*f件 19 548690 玖、發明說明 27··，;麵 28"碰徽 31···凹口 41·.·區隔器元件 44、45"囔趨 47、48· · ·區域 Α··φ4^ F卜F2"液離阶 G1、(2···雛鶴 L 'Rm'Rw·"方向 P"點 W· · ·晶圓Wb, or directly on the edge of the wafer. Part of the liquid enters the gap 15 (F2). An excessive portion of the liquid F1 flows downward and is thrown away when the shield and / or the wafer is rotated. The liquid cannot flow into the interior farther than the inside contour of the shield 2, ie it only penetrates to the point P. The distance al between the shielding member 2 and the wafer is selected to be 5 so small that the liquid can be held by the capillary force in the gap 15 and the wafer surface is processed there. A lifting mechanism 5 is now in contact with the wafer surface Wf facing the shield 2, the pin 3 is now opened (B) and the lifting mechanism 5 lifts the wafer so that the liquid film in the gap 15 is broken, and only more The droplets 16 remain on the mask and / or on the surface of the wafer. These droplets 16 can now be scrubbed, blown away and / or thrown away. I: Brief Description of Drawings 3 Figures 1-5 show an axial sectional view of a different embodiment as claimed in the present invention in a structured manner 5. Figures 6-8 show a schematic axial sectional view of a 15 embodiment as shown in Figure 1 in different operating states. [Representative symbol table for the main elements of the diagram] 1 ·· qian 11 ·· 雠 2 ·· ί New successor, Lai Niu 13 " Township 3, 53 " 働 15 ··· Clearance 4 " 20-the body 4 23 ... face 6, 7, 46, 49 ... · mouth mouth 24 · carry 8 " disc 25 .. * f pieces 19 548690 玖, invention description 27 · ,; face 28 " ··· Notch 41 ··· Separator element 44, 45 " Trend 47, 48 " 'Rw · " direction P " point W ··· wafer
Wb、Wf···晶圓表面 20Wb, Wf ... wafer surface 20