TW548451B - Integrated high resolution image sensor and display on an active matrix array - Google Patents

Abstract

The present invention provides an integrated image sensor and display, which includes an active matrix array integrating both the display and the sensor thin-film transistor and the image sensing device in a liquid crystal display. The display thin-film transistor and the liquid crystal can control the brightness of a displayed image. A micro-lens array is located behind the active matrix array substrate, and can focus and guide the backlight through a display aperture. Another micro-lens array is built on the surface facing the user to focus and guide the external image onto the image sensing device of the active matrix array.

Description

548451 V. Description of the invention (l) Field of the invention The present invention relates to a liquid crystal display 'LCD' of an active matrix (ac ti ve ma tri X). In particular, it includes an integrated image sensor and micro-condensing An active matrix liquid crystal display with an integrated image sensor and micro-lens. Background of the invention Liquid crystal displays have been widely used in the electronics industry. Because of its light weight and small size, LCD_ displays have become a very popular display medium in many electronic devices, such as notebook computers and palm top personal assistants. , And portable video game system (portable video game system), and most of these electronic devices must have input and output interfaces. For low-resolution application needs, touch panels are often used in liquid crystal displays or cathode-ray tube 'CRT' displays to allow users to Enter instructions or information. Displays like off-screen touch panels have fairly low density and resolution. Therefore, the bandwidth of the input information is very limited, and the input speed of the lean material is very slow. In order to meet the needs of higher resolution applications, can the input sensor have high density at the same time?

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5. Description of the invention (2) Degree and faster response have become a strong demand. To match the two advantages of an input sensor with south resolution and speed In an electronic device, an independent sensor or scan = 'is often used with an output display. In this device, the input and measurement, and the benefits and functions of the display device can be achieved. There is no doubt that the interface of such input sensors and output devices becomes cumbersome and costly. = For example, it is not easy to make colors appear on the display by image sensors. Therefore, there is an urgent need for high-density input sensors and high-resolution output devices to be integrated on the same device, so that the user interface of the electronic device can be completed in a system on the same panel. SUMMARY OF THE INVENTION The present invention overcomes the above-mentioned difficulties and can meet the needs of integrating high frequency bandwidth and resolution of both an input sensor and a display device. The main object of the invention

Yes' Provides an active matrix on a liquid crystal display. The active matrix has both a sensor thin-film transistor and an image sensor. It is another object of the present invention to provide the above-mentioned integrated high-resolution image and provide a device structure for designing and imaging sensors and displays.

548451

According to the present invention, at each pixel umt of the active matrix array, there is a display thin film transistor (dispuy thin-fUm "ell t (ansistor)) to control the liquid crystal in the pixel unit. Each == also includes an image sense Detector diode and sensor film transistor to detect the incident light thick film (incident 1 ight) of the image object (1 ceramic e OBject). By combining multiple image sensors (incorporating) into a liquid crystal display, the image display sensor system can be manufactured on the same panel to achieve the purpose of high display resolution and "ancient input bandwidth." The invention also provides a panel device structure, The device structure of this panel includes both an image sensor and a display. The micro-condensing lens can be made by coating an appropriate material on the transparent substrate of this panel. The display micro-condensing lens is like a focusing element (F〇cusing element), guide the backlighting 3〇 ^ 11§111 :) through a display aperture ((141) 1 & 7 叩 61 «1: 111 ^). Say + light lens sensor can be used to focus outside On the image and direct it to the image sensor On the diode. For flat or opaque objects, the display backlight can be used as light. (Light source), and this sensor can be used as a contact image sensor (c. ntact image sensor, CIS). For the image acquisition of objects with general viewing distance, the micro-condensing lens can be designed to have a focal distance within a suitable range. Brief description of the figure

C: \ patent \ 880045erso. Ptd page 6 548451 V. Description of the invention (4) FIG. 1 shows an equivalent circuit of an integrated image sensor and active matrix array of the display of the present invention. FIG. 2 shows an area map of an active matrix column of an integrated image sensor and display of the present invention and its peripheral circuits. FIG. 3 is a cross-sectional view of an integrated image sensor and display array according to the present invention. Drawing number description

101 display thin film transistor 102 liquid crystal XD, Xs horizontal address line YD, Ys vertical address line 1 0 3 image sensor array and sensor thin film transistor 104 image sensor diode 1 0 5 storage capacitor array 1_2 2 0 1 Integrated image sensor and display pixel unit array 2 0 2 Display gate driving circuit 2 0 3 Sensor gate driving circuit

C: \ patent \ 880045erso. Ptd Page 7 548451 V. Description of the invention (5) 205 Photo sensor peripheral circuit 207 I / O integrated circuit and sensor 204 Pre-charge circuit 206 Display peripheral circuit Sensor thin film transistor 305 First display electrode 3 0 7 Sensor electrode 3 0 9 Liquid crystal 311 Micro condenser lens 313 Micro condenser lens 31 4 With or without anti-reflection / anti-302 upper glass substrate 3 0 4 Display thin chirped crystal 3 0 6 Sensor diode 308 Second display electrode 31 0 Color filter 31 2 Polarizer layer outer light analyzer

Detailed description of the invention

FIG. 1 shows an equivalent circuit of an integrated image sensor and a display cell array of the present invention. The equivalent circuit includes a display pixel unit array, which is provided with a thin film transistor 1 〇 1. Each display thin-film transistor 101 of the display pixel unit controls the liquid crystal 102 in a pixel area to generate the required power of the pixel. The horizontal and vertical address lines (a d d r e s s 1 i n e) XD sum, so that each display unit is scanned and selected. This equivalent circuit also has an image sensor array and a sensor thin film transistor 103. Every sensor

C: \ patent \ 880045erso. Ptd page 8 548451 V. Description of the invention (6) The thin film transistor 103 is connected to an image sensor diode 104. The horizontal and vertical address lines Xs and Ys allow each image sensor to be scanned and selected. In addition, the image sensor array and the display pixel unit array are integrated, and there is a storage capacitor array 105. FIG. 2 shows a block diagram of an integrated image sensor and display according to the present invention. The integrated image sensor and display include an integrated image sensor, a display active matrix array and peripheral circuits. Integrated image sensor and display Including an integrated image sensor and display pixel unit array 201

Display gate drive circuits 20 2. Sensor gate drive circuits 203, precharge circuits 204, photo sensor peripheral circuits 20 5 Display peripheral ciircuits 2 06 and I / O integrated circuits 207 〇 Integrated image sensor and display pixel unit array 2 〇i equivalent circuit has been shown in Figure 1, a little It was mentioned earlier. The display driving circuit M2 and the sensor gate driving circuit 203 scan and control the horizontal address line & and the display peripheral circuit 206 and the photo sensor peripheral circuit 2 respectively, and are connected to the vertical lines YD AYS shown in the figure] . The pre-charge circuit 2Q4 pre-charges the image sensor array. The output / input integrated circuit 207 provides an appropriate interface circuit to connect this integrated scene > image sensing benefit and display | § 'to its main electronic device (h s ^ electronic device).

548451 V. Description of the invention (7) Although Figure 1 shows separate address lines of XD & XS, as long as they do not interfere with each other, a shared single line (j single line) can be used. In Figure 1 The storage capacitor 105 has a ground wire connected to the address line XD, and this address line Xd is also the gate line of the thin film transistor of the display. It is also possible to design a sensor diode. To provide the ground of the storage capacitor 105. In addition to the electronic circuits shown in Figures 1 and 2, the present invention also provides a device structure that incorporates a micro-condensing lens to integrate an image sensor and a display. The image sense of Figure 2 The detector and the display unit array are manufactured on a panel having an active matrix array similar to a liquid crystal display. FIG. 3 is a cross-sectional view of the image sensor and the display panel of the present invention. According to the present invention, the integrated image The sensor and display panel includes a lower glass substrate 301 and an upper glass substrate 302. As shown in FIG. 3, for each image sensor and display unit, a sensor thin film transistor is included.

Semiconductor layers (303), a sensor body (306), and a display film transistor (304) are fabricated on the upper end of the lower glass substrate (301). The sensor diode 306 is a photodiode that is sensitive to incident light. A first display electrode 30 5 is formed on the display thin film transistor, and the first display electrode 30 5 is connected to the display thin film transistor. At the upper end of the sensor diode 306, there is also a sensor electrode 307. The most suitable material for display and sensor electrodes is indium tin oxide

C: \ patent \ 880045erso. Ptd Page 10 548451 V. Description of the invention (8) (i nd i um-1 i n-〇xi de, I TO) 〇 Thin film transistor in active matrix array 3 0 3, 304, which can be any form of thin film transistor, for example, amorphous silicon (polysilicon), polysilicon, CdSe, or single crystalline silicon thin film transistors . The sensor diode 306 may be a form of an amorphous stone p-i-n, Schotty Schottky, or a metal-oxide semiconductor field-effect crystal (MOS-FET). The glass substrates 301 and 302 may also be quartz or plastic substrates, as long as they are materials that are transparent to light. Above the semiconductor layer is a twisted nematic (TN) liquid crystal 3 0 9 which is positioned in a normally white state to allow light to pass through. A second display electrode 308 is formed on the top of the liquid crystal 309 above the area of the first display electrode 305. The material of the second display electrode 308 is also indium.

Tin oxide. A color filter 310 is placed above the liquid crystal layer 309. The top of the color filter is the upper glass substrate 3 02. The color filter can be reflective (r e f 1 e c t i v e) or absorptive. A color filter plate can be used for a full color display (f u 1 1 c ο 1 〇 r t y p e) display. This color filter can also be integrated on the lower glass substrate 3 01, on the second display electrode 3 05, or on the sensor electrode 3 07. If the display is monochrome only

C: \ patent \ 880045erso. Ptd page 11 548451 5. Description of the invention (9) (monochrome), the color filter can be omitted. On the side where the image sensor and the display panel are integrated, a sensor micro-condensing lens 3 13 is manufactured above the upper glass substrate 30 2. The sensor micro-condensing lens 313 is used to collect incident light to the sensor diode 306. An analyzer with or without an anti-reflection / anti-glare outer layer 314 is covered on the upper glass substrate 302 and the micro condenser lens 3 1 3. The sensor micro-condensing lens 3 1 3 is built on the surface of the panel facing the user to focus and direct the 1 ight signal of the external image to the sensor diode 306. On the other side of the panel, a display micro-condensing lens is built under the lower glass substrate 301. A polarizer layer 312 covers the surfaces of the display micro-condensing lens 311 and the lower glass substrate 301. The display micro condenser lens is placed behind the lower glass substrate. Between the substrate and a backlight unit, a micro-condensing lens acts like a focusing element and guides the backlight through a display aperture. The integrated image sensor and display panel includes a two-dimensional array of the image sensor and display unit as described above. Similarly, both the display micro condenser lens and the sensor micro condenser lens form a two-dimensional array of micro condenser lenses. The display micro-condensing lens array can be designed and manufactured in a two-dimensional arrangement with an offset (0 f f s e t) from the display pixel unit array. The positional offset of this position maximizes the acceptable area of the backlight, and,

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An opening that allows the backlight to be focused on a display unit area. This display area is controlled by a transparent display electrode and liquid crystal. ° σ When the integrated image sensor and display panel are used to scan a printed or hand-written image on a piece of paper or a flat object, the light element works as a light source. Touch the panel to locate the scanned object. This backlight reflects the scanned object in the sun and the moon.

Used as a 接触 contact image sensor. On the surface, the sensory water-light lens can be, and it is also counted as having a focusing distance, and the object is imaged at a normal viewing distance and working area (working). The micro-condensing lens can be a It is formed by the material of the light-sensitive type. The material of the light-sensitive type is coated on the surface of the active matrix array substrate or a cover sheet substrate having a refractive index greater than that of the original substrate. The appearance of the micro-condensing lens can also be formed by another non-light sensitive material (photo non-sensitive 丨) magic material. An alternative method of manufacturing a micro-condensing lens is to imitate + (patterning ) And diffusing impurities onto the transparent substrate, so that the total reflectance index can be increased compared to the area of the non-permeable substrate. The integrated sensor and display can be improved in many ways. For example, a black matrix can be integrated on the lower glass substrate for maintenance

C: \ patent \ 880045erso.ptd Page 13 548451 V. Description of the invention (11) The aperture can be used to reduce the positioning requirements of the lower and upper glass substrates. Wide viewing angle technology, such as thin film IPS, MVA, I PS VA, can also be applied to the panel to widen the viewing angle of the display.

However, the above-mentioned _. L cannot be used to limit the present invention to only the preferred embodiments of the invention. That is to say, it is within the scope of application of the present invention. Crossing and modification should still be covered by the patent of the present invention

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Claims (1)

548451 Sixth, the scope of the patent application includes a positive shirt image sensing state and a liquid crystal display including: an active matrix array of w, a plurality of pixel units, and each pixel unit a plurality of liquid crystals; a display thin film transistor for controlling A storage capacitor connected to the liquid crystal in the thin film transistor 3; a sensor thin film transistor; and, a video sensor diode connected to the diaphragm, τ H & Sensor thin film transistor, a plurality of horizontal display address lines; ^ a plurality of vertical display address lines, the horizontal and vertical display address line scanning sub-controlling the display thin film transistor of the storage device; a plurality of horizontal senses A sensor address line; and, a plurality of vertical sensor address lines, the horizontal and vertical sensor address lines, scanning and controlling a sensor thin film transistor of a pixel unit. 2. The active matrix array that integrates an image sensor and a liquid crystal display as described in item 1 of the patent application scope, wherein the thin film transistor of the display and sensor is an amorphous silicon, polycrystalline silicon, CdSe, or single crystal silicon thin film transistor. Crystal 0 3. The active matrix array integrating an image sensor and a liquid crystal display as described in item 1 of the scope of the patent application, wherein 'the image sensor is in the form of an amorphous silicon pin, Schottky or MOSFET. C: \ patent \ 880045erso. Ptd page 15 548451 6 patent application scope 4 · Active matrix array of integrated image sensor and liquid crystal display as described in the first patent application scope, wherein the horizontal display address line And horizontal sensor address lines are shareable address lines. 5 · The active matrix array integrating an image sensor and a liquid crystal display as described in item 1 of the scope of patent application, wherein the display thin film transistor is provided with a line, and the storage capacitor is provided with a ground line connected to the gate line . The active matrix array integrating an image sensor and a liquid crystal display according to item 1 of the scope of patent application, wherein the image diode of the sensor is provided with a ground wire and the storage capacitor is provided with a ground wire connected to the sensor. Detector image ground of diode. A semiconductor device structure for integrating an image sensor and an active matrix cell unit of a liquid crystal display includes: a first semiconductor substrate; a display thin film transistor built on the first semiconductor substrate; a first display electrode, Connected to the display thin film transistor, the first display electrode is constructed above the display thin film transistor; a sensor thin film transistor is built on the first semiconductor substrate; an image sensor is connected to The sensor thin film transistor, the image sensor is constructed above the sensor thin film transistor; a sensor electrode is formed above the image sensor; C: \ patent \ 880045erso. Ptd 548451 6. Scope of Patent Application The liquid crystal layer is disposed above the second electrode. Two semiconductor substrates cover the liquid crystal layer; and a second display electrode is formed between the liquid crystal layer and the second plate. Do not dry ¥ body base The semiconductor device structure of the active matrix pixel unit for integrating an image sensor and a liquid sensor as described in item 7 of the Erming patent Qianwei includes a sensor micro-condensing lens formed in the first Above the two semiconductor substrates. Soil 9 ·· Application of the semiconductor device structure for integrating active matrix pixel units of image sensors and liquid crystal displays as described in item 8 of the scope of the application. The micro-condensing lens is made of a light-sensitive material. Formed, the light-sensitive material is coated on the outer surface of the second semiconductor substrate or a cover sheet of the second semiconductor substrate, and the refractive index of $ ^ in the light-sensitive form is greater than that of the second semiconductor. The refractive index of the substrate refers to the stem. 10. The semiconductor device structure used to integrate an active matrix pixel unit of an image sensor and a liquid crystal display as described in item 8 of the scope of patent application, the sensing is a micro-condensing lens system in the form of a light sensor. A material that is sealed to form the light-sensitive form is coated on the outer surface of the second semiconductor substrate or a cover sheet of the semiconductor substrate, and the light-formed material is further imitated with a light-sensitive material. $ C: \ patent \ 880045erso. Ptd 'Page 17' ----- 548451 6. Scope of patent application ^ ~ ---------— A semiconductor device structure for integrating an active matrix pixel unit of an image sensor and a liquid crystal display. The f-state micro-condensing lens diffuses an impure substance onto the second 2-conductor substrate. Under the other non-permeability regions of the second semiconductor substrate, a finger can be shown to increase the reflectivity of a local substrate region. • The semiconductor device structure for integrating an active matrix pixel unit of an image sensor and a liquid crystal display as described in item 7 of the scope of the patent application, further including a display micro-condensing lens formed on the display The bottom of the first semiconductor substrate. 13. The structure of a semiconductor device for integrating an active matrix pixel unit of an image sensor and a liquid crystal display as described in item 2 of the patent application scope. The micro-condensing lens is formed of a light-sensitive material. The light-sensitive material is coated on the outer surface of the first semiconductor substrate or a cover sheet of the first semiconductor substrate. The refractive index of the light-sensitive material is greater than the refractive index of the first semiconductor substrate. 0 14 · The structure of a semiconductor device for integrating an active matrix pixel unit of an image sensor and a liquid crystal display as described in item 丨 2 of the scope of patent application, C: \ patent \ 880045erso. Ptd Item 18 on page 18 451 6. Scope of patent application --------------- Semiconducting micro-condensing lens system diffuses impure substances to the The first material area 2 on the substrate is compared with the other non-permeable substrates compared to the first semiconductor substrate: 3 to increase the reflectivity of a part of the substrate area 15 16. 17. 18. Liquid crystal ^ special range 7 The semiconductor device structure for integrating an image sensor and the active matrix pixel unit described in the above item is of a quality such that the first semiconductor substrate includes a transparent material, such as the transparent material, silicon, quartz, or plastic. ΠΐSpecial: The semiconductor device structure for integrating an image sensor and a more dimorphic active matrix pixel unit as described in item 7 of the scope, with a black matrix on the body, and the black matrix is integrated in the first semiconductor The structure of a semiconductor device for integrating an image sensor and an active matrix pixel unit as described in Item 7 of the patent patent, the color filter is integrated in the SII and IΓ color data wave device. On the first thousand body substrate. II 用以 Integrated image sensor described in item 7 of the patent scope and 不 No! A semiconductor device structure of an active matrix pixel unit, a color filter, the color filter is between the second semiconductor substrate and the second display electrode. C: \ patent \ 880045erso. Ptd 548451 C: \ patent \ 880045erso.ptd p. 20