TW546752B - Nozzle plate structure at wafer stage and the fabrication method thereof - Google Patents

Abstract

A nozzle plate structure at wafer stage is disclosed, which includes a silicon substrate having an actuating device, a photoresist film formed on the surface of the silicon substrate; a first opening formed inside the photoresist film to expose the surface of the actuating device for serving as an inkjet chamber; a first metal layer is formed on the surface of the photoresist film; a second metal layer formed on the surface of the first metal layer; and a second opening penetrating through the second metal layer and the first metal layer and located on top of the first opening for use as a nozzle orifice.

Description

546752 V. Description of the invention (1) [Field of the invention] The present invention relates to a method for manufacturing a nozzle plate for an ink jet print head chip. In particular, it relates to a method for manufacturing a nozzle plate using a wafer stage process and a structure for spraying L-pieces. [Background of the Invention] Among the mainstream products of computer printing equipment, the printing technology of inkjet printers is to place a precise volume of ink droplets in a precise and specific position with a computer numerical drive, which can not only provide high Resolution and full-color picture output can also meet the requirements and trends of electronics industry manufacturing technology for automation, miniaturization, cost reduction, time reduction, and environmental impact. One of the thermal inkjet print head chips that has been successfully commercialized is based on the principle that the ink is instantaneously vaporized by heating and then pushed by the generated high-pressure bubbles The ink is further ejected through a nozzle orifice to be printed on the paper. The quality of inkjet printing technology mainly depends on the physical characteristics of the nozzle holes, such as the undercut contour and opening shape of the “M” holes, which will affect the volume, execution, and ejection speed of ink droplets. The early technology used a 1 ithographic electroforming process or other electrochemical processing to form a metal orifice plate, and then stuck this gold \ orifice plate to the print head grain on. However, this kind of electric shovel "stomach has the following disadvantages: the first ...

546752 V. Description of the invention (2) Poor property, so poor households. Second, the problem of degree and alignment; to the limit; fourth, fifth, prone to electricity on the ink surface (Au) to solve the above problem, laser) processing method (mi sa 1 ignment) In view of this, a new The cost of the spray gun and the increase of the spray energy can provide easy and accurate third. The spraying of the rotten spray is delayed to delay the production of the inkjet analysis control process strip of the production process for the picture of the sheet process hole. The shape of the spray hole is too high. The problem of non-porous sheet corrosion phenomenon, the technology changed to the use of spray holes, but the nozzle is too large and effective to improve the accuracy of the same time to achieve the same limited accuracy, and parts, such as stress, size, etc. It takes more excimer lasers, which will encounter expensive and other problematic films, to simplify the process. And the production efficiency, electroforming thickness gauge is subject to the demand; the number of nozzles in the table is more cost. In order to make the excimer to be inaccurate, it is necessary to open and reduce the production. [Summary of the invention] The method of the present invention, which uses layers, lithography, and I worms, can be designed with nozzle holes. The purpose is to improve the wafer stage process, engraving and other combined steps to effectively solve problems such as the conventional adhesion limit. A wafer stage and a nozzle structure can be produced and the coating can be made without using an electroformed metal layer. Directly on a silicon wafer with poor performance and a patterned bottom including uniform moving elements; a photoresist; a first opening formed in the photoresist thin inkjet cavity; two metal layers, which can be provided on the surface of the film as a first The fabricated nozzle hole junction film is formed in a silicon-based film to expose a first metal layer system formed on a first metal structure. A bottom surface of a moving element is formed on a metal layer. Surface photoresist surface

0741-7735TW (N); ND-P0045; Cherry.ptd Page 5 546752 5. In the description of the invention (3); and a second opening penetrates the second metal layer and the first metal layer and is located in the first opening The top is provided as a spray hole. According to the invention, a method for fabricating an orifice plate at a wafer stage includes the following steps: providing a Shi Xi substrate with a uniform moving element on its surface; and forming a photoresist film on the surface of the Shi Xi substrate, wherein The exposure of the photomask as a selected area can make the photoresist film form an uncrosslinked area and a crosslinked area, and the uncrosslinked area is located above the actuating element; a sputtering or vapor deposition process is performed on the Forming a first metal layer on the surface of the photoresist film; performing an electric ballasting process to form a second metal layer on the surface of the first metal layer; defining a photoresist layer on the surface of the second metal layer, Wherein, the photoresist layer includes an opening, and its position includes a part or all of the area above the uncrosslinked region. The photoresist layer is used as a mask to perform a post-cut process. The second metal layer below the opening and the The first metal layer is removed to form a spray hole; the photoresist layer is removed by development; and the uncrosslinked area of the photoresist film is removed by development to form an inkjet cavity in the photoresist film. The method for manufacturing a nozzle plate of the second wafer stage of the present invention includes the following steps: providing a silicon substrate with a uniformly moving element on its surface; and forming a photoresist film on the surface of the silicon substrate, wherein The exposure of the photomask as a selected area can make the photoresist film form an uncrosslinked area and a crosslinked area, and the uncrosslinked area is located above the actuating element; a sputtering or vapor deposition process is performed on the A first metal layer is formed on the surface of the photoresist film; a photoresist layer is defined on the surface of the first metal layer, wherein the photoresist layer includes an opening and its position includes a portion above the uncrosslinked region Or all; using the photoresist layer as a mask to perform an etching process, the

0741-7735TWF (N); ND-P0045; Cherry.ptd Page 6 546752 V. Description of the invention (4) The first metal layer is removed to form a hole; the photoresist layer is removed by development; an electric scale process is performed to A second metal layer is formed on the surface of the first metal layer, and the second metal layer and a spray hole are formed in the first metal layer; the uncrosslinked area of the photoresist film is removed by development to make the photoresist An ink-jet cavity is formed in the film. The method for manufacturing a nozzle plate of the third wafer stage of the present invention includes the following steps: providing a silicon substrate with a uniformly moving element on its surface; forming a photoresist film on the surface of the stone substrate, wherein The exposure of the selected area by the photomask can make the photoresist film form an uncrosslinked area and a crosslinked area, and the uncrosslinked area is located above the actuating element; a sputtering or evaporation process is performed to A first metal layer is formed on the surface of the photoresist film; a photoresist layer is defined on the surface of the first metal layer, and the position of the photoresist layer includes a part or all of the area above the uncrosslinked area. Performing an electroforming process to form a second metal layer on the surface of the first metal layer; selectively grinding the second metal layer until the second metal layer reaches a thickness of a predetermined orifice plate; developing to remove the light A barrier layer to form a hole in the second metal layer; using the second metal layer as a mask to perform an etching process, and removing the first metal layer below the hole, the second metal layer and the first metal layer can be removed. A spray is formed in a metal layer Holes; and developing to remove uncrosslinked areas of the photoresist film to form an inkjet cavity in the photoresist film. The fourth method for manufacturing a nozzle plate in the wafer stage of the present invention includes the following steps: providing a silicon substrate with a uniformly moving element on its surface; forming a photoresist film on the surface of the silicon substrate, wherein Exposure of the photomask as a selected area can form the photoresist film into an uncrosslinked area and a crosslinked

0741-7735TW (N); ND-P0045; Cherry.ptd Page 7 546752 V. Description of the invention (5) area, and the uncrosslinked area is located above the actuating element; defined on the surface of the photoresist film Forming a photoresist layer, wherein the position of the photoresist layer includes a part or all of the area above the uncrosslinked area; and a sputtering or evaporation process is performed to form a photoresist layer and a surface of the photoresist film A first metal layer; an electroforming process to form a second metal layer on the surface of the first metal layer; a selective grinding process to perform the second metal layer above the photoresist layer and the first metal layer Removing and making the second metal layer reach the thickness of the predetermined nozzle hole sheet; developing and removing the photoresist layer to form * a nozzle hole in the second metal layer and the first metal layer; and developing and removing the photoresist film The uncrosslinked area is used to form an inkjet cavity in the photoresist film. The fifth to eight kinds of wafer orifice fabrication methods of the present invention are modified from the aforementioned first to fourth methods. After the uncrosslinked region is completed, the photoresist film is removed by development. The cross-linking area forms an inkjet cavity in the photoresist film, and then forms a solid film on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity. Subsequent related processes can be performed on the solid film until the nozzle plate is completed, and the inkjet cavity can be exposed. According to the above object, one feature of the present invention is that the steps of photoresist, lithography, etching, etc. are used to make metal nozzle holes and nozzle holes, which can accurately control the size and position of the nozzle holes and help improve the product Set, and can provide very high resolution inkjet quality. Another feature of the present invention is that making the nozzle plate by sputtering the first metal layer and electroforming the second metal layer can effectively solve the problem of poor adhesion of the conventional nozzle plate.

0741-7735TW (N); ND-P0045; Cherry.ptd Page 8 546752 V. Description of the invention (6) Another feature of the present invention is that the lithography I insect engraving process is performed directly on the wafer. The process is simple and easy. The cost is low, which meets the needs of commercial mass production. [Detailed description of the invention] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments and the accompanying drawings for detailed description as follows: [Example Description] The present invention proposes an orifice plate structure and a variety of matching manufacturing methods, which adopt a wafer stage process, and can be directly combined with the crystal through the combined steps of electroforming metal layer, coating photoresist layer, lithography, and engraving. Make a nozzle plate on the circle. As for the number, arrangement, and size of the nozzle holes are selected designs, the embodiments of the present invention are not limited. In addition, the manufacture of the inkjet tank of the print head wafer can be performed before the inkjet cavity is produced, or after the inkjet cavity pattern is completed. The following is an example to illustrate the structure of a nozzle hole in an actuator element (for example, a thin film heater). Please refer to FIG. 1, which shows a schematic cross-sectional view of a nozzle plate structure of the present invention. A silicon substrate 10, which may be of a die type or a wafer type, and whose surface includes at least a uniform moving element 11 (such as a thin film heater), a photoresist film 12, at least a first metal layer 16 and A second metal layer 18, wherein the photoresist film 12 is used as a barrier structure, and the first metal layer 16 and the second metal layer 18 are used as an orifice plate. Moreover, the photoresist film 12 has an inner shape

0741-7735TW (N); ND-P0045; Cherry.ptd Page 9 546752 V. Description of the invention (7) 1 has a first opening 1 4 which exposes the surface of the actuating element to provide an inkjet Cavity. In addition, a second opening 19 is formed in the first metal layer 16 and the second metal layer 18, which is located above the first opening 4 and the actuating element 丨, and can be provided as a spray hole. In the ^ Jiaguan embodiment, the material of the photoresist film 2 can be selected from photosensitive polymer materials, such as epoxy resin (epoxy), phenol resin (novolak), acrylic resin (arcyUte), Polyimide, polyamide, photosensitive polymer, or liquid photoresist material. Depending on the requirements of the manufacturing process, the material characteristics of the photoresist film 12 are optional. Washable type ^ Solvent-based. The first metal layer 16 is used to provide the bulkiness between the second metal layer 18 and the photoresist film 12, and its thickness is about 2 micrometers. The material can be nickel, copper or other metals The material of layer 18 is lattice-matched gold & and the first metal layer 16 can be made into a multi-layered stack structure. For the production method, sputtering, evaporation, or electroforming is selected. The second metal layer 丨 8 provides the thickness and stress of the holes. The thickness can be made according to the requirements of the nozzle plate. The master of the higher one can choose nickel, copper or other metals. , Plating, evaporation or electroforming. / σ Selective splashing The following is a description of the various manufacturing methods of the 1-knife Yu Xiang section of the present invention with various process variations.阶, Said ® Stage [First Embodiment] Please refer to Figures 2A to 2F, which show a schematic cross-sectional view of the first wafer of the present invention in the wafer stage process. First, as shown in Sheng < T Kongo Figure 2A,

546752 V. Description of the invention (8) Provide: Silicon substrate 20, which is a wafer type, and has a uniform motion piece 21 on its surface, and then coated on the surface of the silicon substrate 20 with a photoresist film ^ 卩The exposure method can be used later to make the photoresist film 22 above the actuating element 21 into an uncrosslinked area 22A, which is used to define the pattern of the inkjet cavity. (Xin) As shown in FIG. M, a first metal layer 26 is formed on the surface of the photoresist film 22 using a coil plating process, and then a first metal layer is formed on the surface of the first metal using an electroforming method. The two metal layers 28, and ϋ are shown in FIG. 2C. As shown in the H2D illustration, a photoresist layer is coated on the surface of the second metal layer 28, and an opening JA 'is formed in the photoresist layer 27 by exposure, development, and other steps, which is located at a Above the cross-linking area m, it can be used to define the pattern of the nozzle holes to be carried out and the first value of the photoresist thinner and the light removal area 2 2 A (Development type 27, and then another ^ μ ......) r, as a mask, the second metal layer M Μ / under the opening 27A can be removed to form a spray hole 29. Subsequently, in a developing manner; after the U of 22 ′, as shown in FIG. 2F, In the obvious way, the area, such as the area 22, is removed to form an inkjet cavity 24, and the nozzle plate of the wafer stage process is invented. It should be noted that the present invention 篦 — 宭 阻 芦 27》] 中'#Photoresistive film 22: The material properties of layer 27 are the same as those of the solvent-based photoresist layer 27. In the case where the photoresist 1 is thin and the solvent-based material is used, the material must be water. The developing method is to use two solvents to remove the uncrossed photoresist film 22, and the two-layer method to remove the uncrosslinked area 2 of the photoresist film 22. j > / π

546752 V. Description of the invention (9) Holes in the back of the substrate 20 are made of ... 2. In the backward process, compared with the conventional technology, the present invention is a nozzle plate made of silk, lithography, and residual type f compared with the conventional technology. The degree of accumulation of the nozzle holes can be provided; ;; bit; ', help to improve the present invention to plate a metal layer with money and: heart two :: quality. Moreover, the “mouth hole sheet” can effectively solve the problem of making the conventional spray hole sheet 2: 1. In addition, the present invention directly escapes on the wafer. In addition, you can enter the photoetching process, which is easy and cost-effective, and meets the needs of commercial mass production. Ba Yi Jian Jian Yi [brother-consistent example] ° Yuecha reading brother 3A to 3F ,: ^: title stem too respectful intention ..., hole r base = surface with = ;: r film 32 m with exposure method 'The photoresist thin film 32 above the actuating element 31 can be made into a non-crosslinked area 32A, which is used to define the pattern of the inkjet cavity. = As shown in FIG. 3B, a first metal layer 36 is formed on the surface of the photoresist thin film ^ by using a mining test process, and then as shown in FIG. 3C, a photoresist layer 37 is coated on the first male Γ: 2 Then, exposure, development and other steps are performed: an opening 37A is formed in the light P layer 37, which is located in the uncrosslinked area 32a and can be used to define the pattern of the orifice. Next, using the figure of the photoresist layer 37, if the etching is performed, the first metal layer under the opening 37A can be removed.

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546752 V. Description of the invention (ίο) 3 6 ′ to form a dagger hole 3 6 a except. The image of Shikoudi 3E is shown on the surface of the layer 36 and the first metal layer. It is shown in the development method to form a 36th inner shape to form an inkjet cavity 3 4 It is worth noting that this When the photoresist layer 37 and the photoresist thin film 3 2 and the photoresist layer 3 7 are used as the photoresist film 32, if the photoresist film 32 is of a solvent type, Beij needs to remove the photoresist with a water-solvent developing method to remove the photoresist film 32. Crossing the back side of the hole 'flows out from the back of the silicon substrate 30 after development' and then uses the photoresist layer 37 in a developing manner. The method can be selectively used in the first gold-metal layer 38 and then in the second The metal layer 38 forms an injection hole 39. Finally, as shown in FIG. 3F, the uncrosslinked region 3 2 A of the resist film 32 is removed, and the injection hole of the wafer stage process of the invention is used in the first embodiment to avoid the uncrosslinked region of the film 32 being removed. 32A is removed, so the material properties of light cannot be the same. For example, the photoresist layer 37 is made of a material and the photoresist layer 37 is developed by using a water-developed profile to develop the photoresist layer 37. Subsequently, the uncrosslinked area "A" of the film 32 is used. Another method of connecting the area 32A can be used on a silicon substrate. In the process, the photoresist material of the non-crosslinked region 32A can be made. [Third embodiment] Jing signed the 4A to 4G diagrams, which shows a schematic cross-sectional view of the third wafer of the present invention in the wafer stage process. First, spray Hole = ... bottom 40 'It is a wafer type, and its surface =, moving element 41, and then coating on the surface of Shixi substrate 40 = -42. Then, using the exposure method, the actuating element 41 =

546752 V. Description of the invention ⑴) The film 42 becomes a female mouth. Figure 46 forms a first metal layer 4 on the surface. The photoresist layer 4 7 on the surface is shown above 4 2 A, and zero is used to form a second gold. The method of grinding the thickness to the first metal layer 48 can be used to grind the second gold parent region 42A to define the pattern of the inkjet cavity. As shown, a metal layer 46 is formed on the surface of the photoresist film 42 by a sputtering process. Then, as shown in FIG. 4C, a photoresist layer 47 is coated on the first gold, and then the patterns of steps such as exposure and development are applied, and the remaining photoresist layer 47 is covered with uncrosslinked 1—can be used to define the spray Pattern of holes. Next, as shown in FIG. 0, the method may be followed by selectively forming the metal layer 48 on the surface of the first metal layer 46, and then spraying the required thickness of the second metal layer 48 in a research manner. In a preferred embodiment, the height of the first surface can be made slightly lower than the height of the photoresist layer 47, and the polishing f mechanical polishing (CMP) process uses the selective polishing method to belong to the layer 48. As shown in Figure 4E, the search is performed; Gu's face uses the second metal layer 48 as a mask to perform the system. As shown in Figure F, the first metal layer 46 below 48A can be used in ^, A spray hole 49 can be formed in the hole-containing metal layer 46. Finally, my brother: the Mon layer M and the first gold method will not show the uncrosslinked area 42 of the photoresist film 42 in order to develop a spray hole for the wafer stage T / of the invention to form a spray. The ink cavity is worth thinking about. In the present invention, when the photoresist layer 47 is removed, the photoresist film 4 is adhered. In the two embodiments, in order to avoid the combination of the deblocking film 42 and the photoresist layer 47, the connection zone 42A is removed, so the photoresist film 4 2 is different from the solvent profile. For example, in the case of high quality, Beiij needs to use water-developed profiles with a water-g \ photoresist layer to remove the photoresist layer 47 in a visible shirt method.

546752 V. Description of the invention (12) The non-crosslinked region 42A of the photoresist film 42 is removed by a bath developing method. Another method of removing the non-crosslinked area 42a of the photoresist film 42 is to dig a hole on the silicon surface 40 ′. During the development process, the photoresist material of the uncrosslinked area 4 2 A can be made of silicon. The back surface of the substrate 40 flows out. [Fourth implementation J Qing refer to the film at the wafer level to provide a 夕 Xiji actuating element 51 52. Subsequently, the film 5 2 becomes a pattern 5B and is then exposed to a photoresist layer 5 7 pattern. The film 52 and the silicon 5D pattern form a second photoresist layer 5 7 and the height range of the second gold layer in the embodiment 57 to select an example.] Figures 5A to 5F, which A schematic cross-sectional view showing a process of a nozzle section according to a fourth embodiment of the present invention. First, as shown in FIG. 5A, the bottom 50 ′ is a wafer type, and a surface is fabricated thereon, and then a photoresist film is coated on the surface of the Shi Xi substrate 50. The method of exposure = A thin photoresistive region 5 2 A above the actuating element 5 丨 is used to define the pattern of the inkjet cavity. As shown in the figure, a photoresist layer 57 is coated on the surface of the silicon substrate 50, and the steps of development and photoresist are defined to define the photoresistance ^ 7 1 to increase 13 f >, then the recorded area is covered in the uncrosslinked area 52A. Twenty sounds above the heart, which can be used to define the post-spouting hole. As shown in Figure 5C, Sakata ,,,, and = are used by mining. The mining process forms a cage on the surface of the thin photoresistive substrate 50. M Rlr · One from the young one metal layer 56. It is shown that the electroforming method can be used to apply the metal layer 58 on the surface of the first metal layer 56. Then, as described in Section 5Fpi—Singer 〇b Table Qu „Figure, the surface of the second metal layer 58 and the first metal layer 58 are ground to the thickness of +56 to remove the 芏 required The thickness of the orifice plate. In comparison, the surface of the second metal layer 58 can be reduced in ancient times, and the degree of nr can be slightly lower than the photoresistance, and this grinding method can be used in combination with 4k. Pre-mechanical grinding (C μ p) lapping method to grind the second metal layer 58. «

0741-7735TWF (N); ND-P0045; Cherry.ptd Page 15 546752 Brief Description of Drawings Figure 1 shows a schematic cross-sectional view of the structure of the orifice plate of the present invention. Figures 2A to 2F are schematic cross-sectional views showing the process of forming the orifice plate in the wafer stage according to the first embodiment of the present invention. Figures 3A to 3F are schematic cross-sectional views showing the process of forming the orifice plate in the wafer stage according to the second embodiment of the present invention. Figures 4A to 4G are schematic cross-sectional views showing a process of a nozzle plate in a wafer stage according to a third embodiment of the present invention. Figures 5A to 5F are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a fourth embodiment of the present invention. Figures 6A to 6F are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a fifth embodiment of the present invention. Figures 7A to 7E are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a sixth embodiment of the present invention. Figures 8A to 8F are schematic cross-sectional views showing the process of forming a nozzle plate in a wafer stage according to a seventh embodiment of the present invention. Figures 9A to 9G are schematic cross-sectional views showing the process of forming an orifice plate in a wafer stage according to an eighth embodiment of the present invention. , [Symbol description] 10, 20, 30, 40, 50, 60, 70, 80, 90 ~ silicon substrate; 1 1, 21, 3 1, 4 1, 5 1, 6 1, 7 1, 8 1, 9 1 ~ Actuating element; 12, 22, 32, 42, 52, 62, 72, 82, 92 ~ Photoresist film; 12A, 22A, 32A, 42A, 52A, 62A, 72A, 82A, 92A ~ Uncrosslinked area ;

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Claims (1)

) 4 () 752 Liushen if Patent Scope 1 · Kinds of wafer stage crops + +-silicon substrate, 乂 乂 臂 right arm hole sheet structure, including:-Photoresistance thin; containing-actuating element; Proof ^, is formed on the silicon substrate # ,, --- the first open D, # on the surface with $ / 丞 bottom; the surface of the component, q is connected ^; 5 Hai photoresist film, the exposure A first eighteenth is an inkjet cavity; a second metal] is formed on the surface of the photoresist film; and a metal layer is formed on the surface of the first metal layer; a second opening XU It runs through this layer and is located in the first metal layer and the first metal in the mouth. If you apply for a patent: you should mention the first item above to make a ^ ^ sheet structure. Nozzle 3 made in the round stage · If applied, =-is a wafer type. Wafer structure, in which the orifices made in the wafer stage described in item 1 of silicon 4 are as described in the patent application scope j "grain type. ΫSocial Structure, J: + β The spray hole moving element is a thin film heater. The spray hole manufactured in the wafer stage described in item 1 of the scope of the invention ... " The photoresist film is a polymer material or a liquid photoresist material 6 · The wafer structure produced at the wafer stage as described in item i of the patent application scope, wherein the first metal layer is a single-layer metal structure or a multi-structure. Belonging to 7 · The crystal as described in item 1 of the patent application scope The structure of the orifice plate produced in the round stage, wherein the orifice plate is applied to an inkjet print head wafer. [_7735TWF (N); ND-P0045; Cher ry.ptd Page 24 546752 6. Application patent scope 8 -A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist film Contains an uncrosslinked region, and the uncrosslinked region is located in the Over the element; performing a sputtering or evaporation process to form a first metal layer on the surface of the photoresist film; performing an electroforming process to form a second metal layer on the surface of the first metal layer; A photoresist layer is defined on the surface of the second metal layer, wherein the photoresist layer includes an opening, and its position includes a part or all of the area above the uncrosslinked area; the photoresist layer is used as a mask to perform an etching process. Removing the second metal layer and the first metal layer below the opening to form a spray hole; developing to remove the photoresist layer; and developing to remove uncrosslinked areas of the photoresist film for the photoresist An ink-jet cavity is formed in the thin film. 9. The method for manufacturing the orifice plate at the wafer stage as described in item 8 of the patent application scope, wherein the silicon substrate is a wafer type. The manufacturing method of the orifice plate at the wafer stage according to item 8, wherein the actuating element is a thin film heater. 1 1. The manufacturing of the orifice plate at the wafer stage according to item 8 of the patent application scope Method, wherein the photoresist film and the The material of the photoresist layer has the same 0741-7735TWF (N); ND-P0045; Cherry.ptd Page 25 546752 6. Scope of patent application Water development or solvent development properties. 1 2. The method for manufacturing the orifice plate at the wafer stage according to item 8 of the scope of the patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 1 3. The method for manufacturing a nozzle plate at the wafer stage according to item 8 of the scope of patent application, wherein in the step of developing and removing the uncrosslinked region, the material of the uncrosslinked region of the photoresist film can be The back of the silicon substrate flows out. 1 4. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist film An uncrosslinked region is included, and the uncrosslinked region is located above the actuating element; a sputtering or evaporation process is performed to form a first metal layer on the surface of the photoresist film; A photoresist layer is defined on the surface of the metal layer, wherein the photoresist layer includes an opening, and its position includes a part or all of the area above the uncrosslinked area. The photoresist layer is used as a mask to perform an etching process. Removing the first metal layer under the opening to form a hole; developing to remove the photoresist layer; performing an electroforming process to form a second metal layer on the surface of the first metal layer, the second metal layer And forming a spray iL in the first metal layer; 0741-7735TWF (N); ND-P0045; Cherry.ptd Page 26 546752 VI. Patent Application Scope The uncrosslinked area of the photoresist film is removed by development to form an inkjet cavity in the photoresist film. 1 5. The method for manufacturing a nozzle plate at the wafer stage as described in item 14 of the scope of patent application, wherein the silicon substrate is a wafer type. 16. The method for manufacturing a nozzle plate at the wafer stage according to item 14 of the scope of patent application, wherein the actuating element is a thin film heater. 1 7. The method for manufacturing the orifice plate at the wafer stage as described in item 14 of the scope of the patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 1 8. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element. A sputtering or evaporation process is performed to form a first metal layer on the surface of the photoresist film. A photoresist layer is defined on the surface of the metal layer, and the position of the photoresist layer includes a part or all of the area above the uncrosslinked area; an electrical prayer process is performed to form a first layer on the surface of the first metal layer. Two metal layers; selectively grinding the second metal layer until the second metal layer reaches a thickness of a predetermined nozzle hole; developing and removing the photoresist layer to form a hole in the second metal layer; 0741-7735TWF (N); ND-P0045; Cherry.ptd Page 27 546752 Sixth, the scope of the patent application for the etching process using the second metal layer as a mask, removing the first metal layer under the hole, you can Forming a spray hole in the second metal layer and the first metal layer; and developing and removing the uncrosslinked area of the photoresist film to form an inkjet cavity in the photoresist film. 1 9. The method for manufacturing a nozzle plate at the wafer stage as described in item 18 of the scope of patent application, wherein the silicon substrate is a wafer type. 20. The method for manufacturing a nozzle plate at the wafer stage according to item 18 of the scope of the patent application, wherein the actuating element is a thin film heater. 2 1. The method for manufacturing a nozzle plate at the wafer stage as described in item 18 of the scope of patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 2 2. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform moving element on its surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element. A photoresist layer is defined on the surface of the photoresist film, and the position of the photoresist layer includes the uncrosslinked region. Part or all of the area above the area; performing a sputtering or evaporation process to form a first metal layer on the surface of the photoresist layer and the photoresist film; Forming a second metal layer on the surface; 0741 -7735TWF (N); ND-P0045; Cherry.ptd Page 28 546752 6. Apply for a selective grinding process to remove the second metal layer and the first metal layer above the photoresist layer. And making the second metal layer reach the thickness of the predetermined orifice; developing to remove the photoresist layer to form a spray film in the second metal layer and the first metal layer; and developing to remove the photoresist film. A cross-linking area to form an inkjet cavity in the photoresist film. 2 3. The manufacturing method of the nozzle plate at the wafer stage according to item 22 of the scope of patent application, wherein the silicon substrate is a wafer type. 2 4. The manufacturing method of the nozzle plate at the wafer stage according to item 22 of the patent application scope, wherein the actuating element is a thin film heater. 2 5. The method for manufacturing a nozzle plate at the wafer stage according to item 22 of the scope of patent application, wherein the material of the photoresist film and the photoresist layer have the same water developing or solvent developing properties. 2 6. The method for manufacturing the orifice plate at the wafer stage according to item 22 of the scope of patent application, wherein the material of the photoresist film and the photoresist layer have different water development or solvent development properties. 2 7. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform moving element on its surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element; the uncrosslinked region of the photoresist film is removed by development so as to be within the photoresist film 0741-7735TWF (N); ND-P0045; Cherry.ptd page 29 546752 6. Application for patent formation to form an inkjet cavity; a solid film is formed on the entire surface of the silicon substrate to cover the photoresist film and the An inkjet cavity; performing a sputtering or evaporation process to form a first metal layer on the surface of the solid film; performing an electroforming process to form a second metal layer on the surface of the first metal layer; A photoresist layer is defined on the surface of the second metal layer, wherein the photoresist layer includes an opening, which is located above the inkjet cavity; and an etching process is performed using the photoresist layer as a mask, and a photoresist layer is formed below the opening. The second metal layer, the first metal layer, and the solid-state film are removed to form a spray nozzle L, and at the same time, the inkjet cavity is exposed. 2 8. The manufacturing method of the nozzle plate at the wafer stage according to item 27 of the patent application scope, wherein the silicon substrate is a wafer type. 2 9. The method for manufacturing a nozzle plate at the wafer stage according to item 27 of the patent application scope, wherein the actuating element is a thin film heater. 3 〇. The method for manufacturing the orifice plate at the wafer stage according to item 27 of the patent application scope, wherein the material of the photoresist film and the photoresist layer have the same water developing or solvent developing properties. 3 1. The method for manufacturing a nozzle plate at the wafer stage as described in item 27 of the patent application scope, wherein in the step of developing and removing the uncrosslinked region, the material of the uncrosslinked region of the photoresist film may be Flowing from the back of the silicon substrate. 3 2. — A method of making a nozzle plate at the wafer stage, including the following steps: 0741-7735TWF (N); ND-P0045; Cherry.ptd Page 30 546752 6. The scope of the patent application provides a Shi Xi substrate, which includes a uniform moving element on the surface; a photoresist film is formed on the surface of the silicon substrate, where The photoresist film includes an uncrosslinked area, and the uncrosslinked area is located above the actuating element. The uncrosslinked area of the photoresist film is removed by development to form an inkjet cavity in the photoresist film. Forming a solid film on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity; performing a sputtering or evaporation process to form a first metal layer on the surface of the solid film; A photoresist layer is defined on the surface of the first metal layer, wherein the photoresist layer includes an opening at a position including a part or all of the upper part of the inkjet cavity; the photoresist layer is used as a mask to perform an etching process. Removing the first metal layer and the solid film under the opening to form a hole and exposing the inkjet cavity; developing to remove the photoresist layer; and performing an electroforming process on the surface of the first metal layer Forming a second metal layer, the second metal layer and forming a metal layer within the first orifice. 3 3. The manufacturing method of the nozzle plate at the wafer stage according to item 32 of the patent application scope, wherein the silicon substrate is a wafer type. 3 4. The method for manufacturing a nozzle plate at the wafer stage according to item 32 of the scope of the patent application, wherein the actuating element is a thin film heater. 0741-7735TWF (N); ND-P0045; Cherry.ptd Page 31 546752 VI. Application for patent scope 3 5. The method for making the orifice plate of the wafer stage as described in Item 32 of the patent application scope, where In the step of removing the uncrosslinked region during development, the material of the uncrosslinked region of the photoresist film can flow out from the back surface of the silicon substrate. 3 6. A method for manufacturing a nozzle plate at the wafer stage, including the following steps: providing a stone substrate with a uniform motion element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element; the uncrosslinked region of the photoresist film is removed by development to form an inkjet cavity in the photoresist film; A solid film is formed on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity; a sputtering or evaporation process is performed to form a first metal layer on the surface of the solid film; A photoresist layer is defined on the surface of the metal layer, and the position of the photoresist layer includes a part or all of the upper part of the inkjet cavity. An electroforming process is performed to form a second layer on the surface of the first metal layer. A metal layer; selectively grinding the second metal layer until the second metal layer reaches a thickness of a predetermined nozzle hole; developing and removing the photoresist layer to form a hole in the second metal layer; using the second metal Floor For the mask | worm process, removing the first metal layer and the solid film under the hole can be performed on the second metal. 0741-7735TWF (N); ND-P0045; Cherry.ptd Page 32 546752 VI. Scope of patent application A spray hole is formed in the layer and the first metal layer, and the inkjet cavity is exposed. 37. The method for manufacturing a nozzle plate at the wafer stage according to item 36 of the patent application scope, wherein the silicon substrate is a wafer type. 3 8. The method for manufacturing a nozzle plate at the wafer stage according to item 36 of the patent application scope, wherein the actuating element is a thin film heater. 3 9 · According to the method for manufacturing a nozzle plate at the wafer stage described in item 36 of the patent application scope, in the step of removing the uncrosslinked region by development, the material of the uncrosslinked region of the photoresist film may be Flowing from the back of the silicon substrate. 4 0. A method for manufacturing a nozzle plate at a wafer stage, including the following steps: providing a stone substrate with a uniform moving element on the surface; forming a photoresist film on the surface of the silicon substrate, wherein the photoresist The film includes an uncrosslinked region, and the uncrosslinked region is located above the actuating element; the uncrosslinked region of the photoresist film is removed by development to form an inkjet cavity in the photoresist film; A solid film is formed on the entire surface of the silicon substrate to cover the photoresist film and the inkjet cavity; a photoresist layer is defined on the surface of the solid film, wherein the position of the photoresist layer includes above the inkjet cavity Part or all of them; performing a sputtering or evaporation process to form a first metal layer on the surface of the photoresist layer and the solid film; and performing an electroforming process to form a first metal layer surface A second metal layer; 0741-7735TWF (N); ND-P0045; Cher ry.ptd Page 33 546752 6. Apply for a selective grinding process to remove the second metal layer and the first metal layer above the photoresist layer. And making the second metal layer reach the thickness of the predetermined nozzle hole; developing to remove the photoresist layer to form a spray film in the second metal layer and the first metal layer; and developing to remove the solid film to expose The inkjet cavity. 4 1. The manufacturing method of the nozzle plate at the wafer stage as described in item 40 of the scope of patent application, wherein the silicon substrate is a wafer type. 4 2 · The method for manufacturing a nozzle plate at the wafer stage according to item 40 of the patent application scope, wherein the actuating element is a thin film heater. 4 3. The method for manufacturing a nozzle plate at the wafer stage as described in item 40 of the scope of patent application, wherein in the step of removing the uncrosslinked region by development, the material of the uncrosslinked region of the photoresist film may be From the back of the Shi Xi base. 0741-7735TWF (N); ND-P0045; Cherry.ptd p.34